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EP1037095A3 - Active matrix substrate, method of manufacturing the same, and image sensor incorporating the same - Google Patents

Active matrix substrate, method of manufacturing the same, and image sensor incorporating the same Download PDF

Info

Publication number
EP1037095A3
EP1037095A3 EP00105130A EP00105130A EP1037095A3 EP 1037095 A3 EP1037095 A3 EP 1037095A3 EP 00105130 A EP00105130 A EP 00105130A EP 00105130 A EP00105130 A EP 00105130A EP 1037095 A3 EP1037095 A3 EP 1037095A3
Authority
EP
European Patent Office
Prior art keywords
same
signal line
pixel capacitor
active matrix
matrix substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
EP00105130A
Other languages
German (de)
French (fr)
Other versions
EP1037095B1 (en
EP1037095A2 (en
Inventor
Hisashi Nagata
Yoshihiro Izumi
Takayuki Shimada
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sharp Corp
Original Assignee
Sharp Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sharp Corp filed Critical Sharp Corp
Priority to EP10001337A priority Critical patent/EP2192441A3/en
Publication of EP1037095A2 publication Critical patent/EP1037095A2/en
Publication of EP1037095A3 publication Critical patent/EP1037095A3/en
Application granted granted Critical
Publication of EP1037095B1 publication Critical patent/EP1037095B1/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/136213—Storage capacitors associated with the pixel electrode
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14601—Structural or functional details thereof
    • H01L27/14609—Pixel-elements with integrated switching, control, storage or amplification elements

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • General Physics & Mathematics (AREA)
  • Nonlinear Science (AREA)
  • Computer Hardware Design (AREA)
  • Electromagnetism (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Chemical & Material Sciences (AREA)
  • Optics & Photonics (AREA)
  • Mathematical Physics (AREA)
  • Liquid Crystal (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)
  • Thin Film Transistor (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
  • Facsimile Heads (AREA)

Abstract

A signal line and a pixel capacitor wire that doubles as a pixel capacitor electrode are fabricated parallel to each other from the same electrode layer through patterning thereof. Therefore, no additional steps are required to form the pixel capacitor wire. In such an arrangement, the pixel capacitor wire and the signal line are disposed parallel to each other; therefore, delays of signal transmission in the signal line and crosstalk between pixels are prevented from occurring. The active matrix substrate incorporating this arrangement is suitably used in liquid crystal display devices, image sensors, and the like. Similar advantages are available with an arrangement in which the signal line and the pixel capacitor wire are disposed parallel to each other, and the storage capacitor electrode, which will constitute a storage capacitor with the pixel electrode therebetween, and the scanning line are fabricated from the same electrode layer through patterning thereof.
EP00105130A 1999-03-11 2000-03-10 Active matrix substrate, method of manufacturing the same, and image sensor incorporating the same Expired - Lifetime EP1037095B1 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
EP10001337A EP2192441A3 (en) 1999-03-11 2000-03-10 Active matrix substrate, method of manufacturing the same, and image sensor incorporating the same

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP6552099 1999-03-11
JP6552099 1999-03-11
JP2000045034A JP3683463B2 (en) 1999-03-11 2000-02-22 Active matrix substrate, manufacturing method thereof, and image sensor using the substrate
JP2000045034 2000-02-22

Related Child Applications (1)

Application Number Title Priority Date Filing Date
EP10001337.4 Division-Into 2010-02-09

Publications (3)

Publication Number Publication Date
EP1037095A2 EP1037095A2 (en) 2000-09-20
EP1037095A3 true EP1037095A3 (en) 2001-01-17
EP1037095B1 EP1037095B1 (en) 2010-05-26

Family

ID=26406667

Family Applications (2)

Application Number Title Priority Date Filing Date
EP00105130A Expired - Lifetime EP1037095B1 (en) 1999-03-11 2000-03-10 Active matrix substrate, method of manufacturing the same, and image sensor incorporating the same
EP10001337A Withdrawn EP2192441A3 (en) 1999-03-11 2000-03-10 Active matrix substrate, method of manufacturing the same, and image sensor incorporating the same

Family Applications After (1)

Application Number Title Priority Date Filing Date
EP10001337A Withdrawn EP2192441A3 (en) 1999-03-11 2000-03-10 Active matrix substrate, method of manufacturing the same, and image sensor incorporating the same

Country Status (6)

Country Link
US (2) US6784949B1 (en)
EP (2) EP1037095B1 (en)
JP (1) JP3683463B2 (en)
KR (1) KR100403932B1 (en)
DE (1) DE60044443D1 (en)
TW (1) TWI258626B (en)

Cited By (1)

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Publication number Priority date Publication date Assignee Title
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EP1037095B1 (en) 2010-05-26
US7250991B2 (en) 2007-07-31
US6784949B1 (en) 2004-08-31
EP1037095A2 (en) 2000-09-20
JP3683463B2 (en) 2005-08-17
EP2192441A3 (en) 2011-06-22
JP2000323698A (en) 2000-11-24
US20040169991A1 (en) 2004-09-02
KR20000076822A (en) 2000-12-26
TWI258626B (en) 2006-07-21
KR100403932B1 (en) 2003-11-01
DE60044443D1 (en) 2010-07-08
EP2192441A2 (en) 2010-06-02

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