EP0815292B1 - Verfahren zum selektiven oder partiellen elektrolytischen metallisieren von oberflächen von substraten aus nichtleitenden materialien - Google Patents
Verfahren zum selektiven oder partiellen elektrolytischen metallisieren von oberflächen von substraten aus nichtleitenden materialien Download PDFInfo
- Publication number
- EP0815292B1 EP0815292B1 EP96907505A EP96907505A EP0815292B1 EP 0815292 B1 EP0815292 B1 EP 0815292B1 EP 96907505 A EP96907505 A EP 96907505A EP 96907505 A EP96907505 A EP 96907505A EP 0815292 B1 EP0815292 B1 EP 0815292B1
- Authority
- EP
- European Patent Office
- Prior art keywords
- metal
- plastics material
- solution
- metallization
- moulded plastics
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Revoked
Links
- 238000000034 method Methods 0.000 title claims abstract description 69
- 238000001465 metallisation Methods 0.000 title abstract description 56
- 239000000758 substrate Substances 0.000 title abstract description 39
- 239000004020 conductor Substances 0.000 title abstract 2
- 239000000243 solution Substances 0.000 claims abstract description 93
- 239000002184 metal Substances 0.000 claims abstract description 47
- 229910052751 metal Inorganic materials 0.000 claims abstract description 46
- 229920003023 plastic Polymers 0.000 claims abstract description 27
- 239000004033 plastic Substances 0.000 claims abstract description 27
- WGLPBDUCMAPZCE-UHFFFAOYSA-N Trioxochromium Chemical compound O=[Cr](=O)=O WGLPBDUCMAPZCE-UHFFFAOYSA-N 0.000 claims abstract description 16
- 238000000576 coating method Methods 0.000 claims abstract description 9
- 238000005530 etching Methods 0.000 claims abstract description 8
- 229910001854 alkali hydroxide Inorganic materials 0.000 claims abstract description 5
- 150000002736 metal compounds Chemical class 0.000 claims abstract description 5
- 229910000000 metal hydroxide Inorganic materials 0.000 claims abstract description 5
- 239000003929 acidic solution Substances 0.000 claims abstract description 4
- 229910001860 alkaline earth metal hydroxide Inorganic materials 0.000 claims abstract description 4
- 150000004692 metal hydroxides Chemical class 0.000 claims abstract description 4
- 238000001556 precipitation Methods 0.000 claims abstract description 4
- 150000002941 palladium compounds Chemical class 0.000 claims abstract 2
- 239000000463 material Substances 0.000 claims description 21
- 239000002991 molded plastic Substances 0.000 claims description 11
- WMFOQBRAJBCJND-UHFFFAOYSA-M Lithium hydroxide Chemical compound [Li+].[OH-] WMFOQBRAJBCJND-UHFFFAOYSA-M 0.000 claims description 10
- 239000011248 coating agent Substances 0.000 claims description 7
- 229920000915 polyvinyl chloride Polymers 0.000 claims description 7
- IUTCEZPPWBHGIX-UHFFFAOYSA-N tin(2+) Chemical class [Sn+2] IUTCEZPPWBHGIX-UHFFFAOYSA-N 0.000 claims description 7
- KAKZBPTYRLMSJV-UHFFFAOYSA-N Butadiene Chemical compound C=CC=C KAKZBPTYRLMSJV-UHFFFAOYSA-N 0.000 claims description 6
- 239000004800 polyvinyl chloride Substances 0.000 claims description 6
- 239000012811 non-conductive material Substances 0.000 claims description 5
- PPBRXRYQALVLMV-UHFFFAOYSA-N Styrene Natural products C=CC1=CC=CC=C1 PPBRXRYQALVLMV-UHFFFAOYSA-N 0.000 claims description 4
- FEWJPZIEWOKRBE-UHFFFAOYSA-N Tartaric acid Natural products [H+].[H+].[O-]C(=O)C(O)C(O)C([O-])=O FEWJPZIEWOKRBE-UHFFFAOYSA-N 0.000 claims description 4
- 150000008044 alkali metal hydroxides Chemical class 0.000 claims description 4
- 239000011975 tartaric acid Substances 0.000 claims description 4
- 235000002906 tartaric acid Nutrition 0.000 claims description 4
- NLHHRLWOUZZQLW-UHFFFAOYSA-N Acrylonitrile Chemical compound C=CC#N NLHHRLWOUZZQLW-UHFFFAOYSA-N 0.000 claims description 3
- 239000005749 Copper compound Substances 0.000 claims description 3
- FEWJPZIEWOKRBE-JCYAYHJZSA-N Dextrotartaric acid Chemical compound OC(=O)[C@H](O)[C@@H](O)C(O)=O FEWJPZIEWOKRBE-JCYAYHJZSA-N 0.000 claims description 3
- 239000004952 Polyamide Substances 0.000 claims description 3
- 229920001577 copolymer Polymers 0.000 claims description 3
- 150000001880 copper compounds Chemical class 0.000 claims description 3
- 239000000203 mixture Substances 0.000 claims description 3
- 229920002647 polyamide Polymers 0.000 claims description 3
- 229920000515 polycarbonate Polymers 0.000 claims description 2
- 239000004417 polycarbonate Substances 0.000 claims description 2
- 229920006149 polyester-amide block copolymer Polymers 0.000 claims 1
- 229940095064 tartrate Drugs 0.000 claims 1
- 239000003795 chemical substances by application Substances 0.000 abstract description 5
- 239000003513 alkali Substances 0.000 abstract description 2
- PTFCDOFLOPIGGS-UHFFFAOYSA-N Zinc dication Chemical class [Zn+2] PTFCDOFLOPIGGS-UHFFFAOYSA-N 0.000 abstract 1
- 150000003752 zinc compounds Chemical class 0.000 abstract 1
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 42
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 21
- 229910052763 palladium Inorganic materials 0.000 description 21
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 16
- 239000007864 aqueous solution Substances 0.000 description 15
- 229910052802 copper Inorganic materials 0.000 description 14
- 239000010949 copper Substances 0.000 description 14
- 239000012190 activator Substances 0.000 description 11
- 150000003606 tin compounds Chemical class 0.000 description 11
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 10
- 239000000084 colloidal system Substances 0.000 description 10
- HEMHJVSKTPXQMS-UHFFFAOYSA-M sodium hydroxide Inorganic materials [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 description 9
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 9
- 238000004519 manufacturing process Methods 0.000 description 8
- 239000000615 nonconductor Substances 0.000 description 7
- 239000002253 acid Substances 0.000 description 6
- 239000008139 complexing agent Substances 0.000 description 6
- 230000003750 conditioning effect Effects 0.000 description 6
- DWAQJAXMDSEUJJ-UHFFFAOYSA-M Sodium bisulfite Chemical compound [Na+].OS([O-])=O DWAQJAXMDSEUJJ-UHFFFAOYSA-M 0.000 description 5
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 5
- 239000003638 chemical reducing agent Substances 0.000 description 5
- 229920001940 conductive polymer Polymers 0.000 description 5
- ARUVKPQLZAKDPS-UHFFFAOYSA-L copper(II) sulfate Chemical compound [Cu+2].[O-][S+2]([O-])([O-])[O-] ARUVKPQLZAKDPS-UHFFFAOYSA-L 0.000 description 5
- 239000002245 particle Substances 0.000 description 5
- 229910052718 tin Inorganic materials 0.000 description 5
- 150000004770 chalcogenides Chemical class 0.000 description 4
- JOPOVCBBYLSVDA-UHFFFAOYSA-N chromium(6+) Chemical class [Cr+6] JOPOVCBBYLSVDA-UHFFFAOYSA-N 0.000 description 4
- 229910052500 inorganic mineral Inorganic materials 0.000 description 4
- NUJOXMJBOLGQSY-UHFFFAOYSA-N manganese dioxide Chemical compound O=[Mn]=O NUJOXMJBOLGQSY-UHFFFAOYSA-N 0.000 description 4
- 229910021645 metal ion Inorganic materials 0.000 description 4
- 150000002739 metals Chemical class 0.000 description 4
- 239000011707 mineral Substances 0.000 description 4
- 150000003839 salts Chemical class 0.000 description 4
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 3
- WSFSSNUMVMOOMR-UHFFFAOYSA-N Formaldehyde Chemical compound O=C WSFSSNUMVMOOMR-UHFFFAOYSA-N 0.000 description 3
- ZMXDDKWLCZADIW-UHFFFAOYSA-N N,N-Dimethylformamide Chemical compound CN(C)C=O ZMXDDKWLCZADIW-UHFFFAOYSA-N 0.000 description 3
- KRKNYBCHXYNGOX-UHFFFAOYSA-N citric acid Chemical compound OC(=O)CC(O)(C(O)=O)CC(O)=O KRKNYBCHXYNGOX-UHFFFAOYSA-N 0.000 description 3
- 150000001875 compounds Chemical class 0.000 description 3
- 229910000365 copper sulfate Inorganic materials 0.000 description 3
- 238000000151 deposition Methods 0.000 description 3
- 230000008021 deposition Effects 0.000 description 3
- MTHSVFCYNBDYFN-UHFFFAOYSA-N diethylene glycol Chemical compound OCCOCCO MTHSVFCYNBDYFN-UHFFFAOYSA-N 0.000 description 3
- 238000009713 electroplating Methods 0.000 description 3
- 238000007654 immersion Methods 0.000 description 3
- GLXDVVHUTZTUQK-UHFFFAOYSA-M lithium;hydroxide;hydrate Chemical compound [Li+].O.[OH-] GLXDVVHUTZTUQK-UHFFFAOYSA-M 0.000 description 3
- 150000002940 palladium Chemical class 0.000 description 3
- 235000010267 sodium hydrogen sulphite Nutrition 0.000 description 3
- 238000001179 sorption measurement Methods 0.000 description 3
- 239000000126 substance Substances 0.000 description 3
- 239000001117 sulphuric acid Substances 0.000 description 3
- TXUICONDJPYNPY-UHFFFAOYSA-N (1,10,13-trimethyl-3-oxo-4,5,6,7,8,9,11,12,14,15,16,17-dodecahydrocyclopenta[a]phenanthren-17-yl) heptanoate Chemical compound C1CC2CC(=O)C=C(C)C2(C)C2C1C1CCC(OC(=O)CCCCCC)C1(C)CC2 TXUICONDJPYNPY-UHFFFAOYSA-N 0.000 description 2
- HZAXFHJVJLSVMW-UHFFFAOYSA-N 2-Aminoethan-1-ol Chemical compound NCCO HZAXFHJVJLSVMW-UHFFFAOYSA-N 0.000 description 2
- NLXLAEXVIDQMFP-UHFFFAOYSA-N Ammonia chloride Chemical group [NH4+].[Cl-] NLXLAEXVIDQMFP-UHFFFAOYSA-N 0.000 description 2
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
- 229910021626 Tin(II) chloride Inorganic materials 0.000 description 2
- JWUXJYZVKZKLTJ-UHFFFAOYSA-N Triacetonamine Chemical compound CC1(C)CC(=O)CC(C)(C)N1 JWUXJYZVKZKLTJ-UHFFFAOYSA-N 0.000 description 2
- 239000000853 adhesive Substances 0.000 description 2
- 230000001070 adhesive effect Effects 0.000 description 2
- 239000002585 base Substances 0.000 description 2
- -1 chalcogenide compound Chemical class 0.000 description 2
- UGWKCNDTYUOTQZ-UHFFFAOYSA-N copper;sulfuric acid Chemical compound [Cu].OS(O)(=O)=O UGWKCNDTYUOTQZ-UHFFFAOYSA-N 0.000 description 2
- QDOXWKRWXJOMAK-UHFFFAOYSA-N dichromium trioxide Chemical compound O=[Cr]O[Cr]=O QDOXWKRWXJOMAK-UHFFFAOYSA-N 0.000 description 2
- 239000000178 monomer Substances 0.000 description 2
- 229920000867 polyelectrolyte Polymers 0.000 description 2
- 229920000728 polyester Polymers 0.000 description 2
- 239000010970 precious metal Substances 0.000 description 2
- 230000001681 protective effect Effects 0.000 description 2
- 229940079827 sodium hydrogen sulfite Drugs 0.000 description 2
- 239000001119 stannous chloride Substances 0.000 description 2
- 235000011150 stannous chloride Nutrition 0.000 description 2
- 238000012360 testing method Methods 0.000 description 2
- SYRHIZPPCHMRIT-UHFFFAOYSA-N tin(4+) Chemical class [Sn+4] SYRHIZPPCHMRIT-UHFFFAOYSA-N 0.000 description 2
- 231100000331 toxic Toxicity 0.000 description 2
- 230000002588 toxic effect Effects 0.000 description 2
- 239000002351 wastewater Substances 0.000 description 2
- FPZWZCWUIYYYBU-UHFFFAOYSA-N 2-(2-ethoxyethoxy)ethyl acetate Chemical compound CCOCCOCCOC(C)=O FPZWZCWUIYYYBU-UHFFFAOYSA-N 0.000 description 1
- REEBJQTUIJTGAL-UHFFFAOYSA-N 3-pyridin-1-ium-1-ylpropane-1-sulfonate Chemical compound [O-]S(=O)(=O)CCC[N+]1=CC=CC=C1 REEBJQTUIJTGAL-UHFFFAOYSA-N 0.000 description 1
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- OYPRJOBELJOOCE-UHFFFAOYSA-N Calcium Chemical compound [Ca] OYPRJOBELJOOCE-UHFFFAOYSA-N 0.000 description 1
- JPVYNHNXODAKFH-UHFFFAOYSA-N Cu2+ Chemical compound [Cu+2] JPVYNHNXODAKFH-UHFFFAOYSA-N 0.000 description 1
- 229910000570 Cupronickel Inorganic materials 0.000 description 1
- KCXVZYZYPLLWCC-UHFFFAOYSA-N EDTA Chemical compound OC(=O)CN(CC(O)=O)CCN(CC(O)=O)CC(O)=O KCXVZYZYPLLWCC-UHFFFAOYSA-N 0.000 description 1
- 241000196324 Embryophyta Species 0.000 description 1
- LYCAIKOWRPUZTN-UHFFFAOYSA-N Ethylene glycol Chemical class OCCO LYCAIKOWRPUZTN-UHFFFAOYSA-N 0.000 description 1
- 241001295925 Gegenes Species 0.000 description 1
- AVXURJPOCDRRFD-UHFFFAOYSA-N Hydroxylamine Chemical compound ON AVXURJPOCDRRFD-UHFFFAOYSA-N 0.000 description 1
- DGAQECJNVWCQMB-PUAWFVPOSA-M Ilexoside XXIX Chemical compound C[C@@H]1CC[C@@]2(CC[C@@]3(C(=CC[C@H]4[C@]3(CC[C@@H]5[C@@]4(CC[C@@H](C5(C)C)OS(=O)(=O)[O-])C)C)[C@@H]2[C@]1(C)O)C)C(=O)O[C@H]6[C@@H]([C@H]([C@@H]([C@H](O6)CO)O)O)O.[Na+] DGAQECJNVWCQMB-PUAWFVPOSA-M 0.000 description 1
- 229920004142 LEXAN™ Polymers 0.000 description 1
- 239000004418 Lexan Substances 0.000 description 1
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 description 1
- 239000004727 Noryl Substances 0.000 description 1
- 229920001207 Noryl Polymers 0.000 description 1
- ZLMJMSJWJFRBEC-UHFFFAOYSA-N Potassium Chemical compound [K] ZLMJMSJWJFRBEC-UHFFFAOYSA-N 0.000 description 1
- UCKMPCXJQFINFW-UHFFFAOYSA-N Sulphide Chemical compound [S-2] UCKMPCXJQFINFW-UHFFFAOYSA-N 0.000 description 1
- NSOXQYCFHDMMGV-UHFFFAOYSA-N Tetrakis(2-hydroxypropyl)ethylenediamine Chemical compound CC(O)CN(CC(C)O)CCN(CC(C)O)CC(C)O NSOXQYCFHDMMGV-UHFFFAOYSA-N 0.000 description 1
- GOPYZMJAIPBUGX-UHFFFAOYSA-N [O-2].[O-2].[Mn+4] Chemical group [O-2].[O-2].[Mn+4] GOPYZMJAIPBUGX-UHFFFAOYSA-N 0.000 description 1
- 238000010306 acid treatment Methods 0.000 description 1
- 230000002378 acidificating effect Effects 0.000 description 1
- 229910000272 alkali metal oxide Inorganic materials 0.000 description 1
- 150000001340 alkali metals Chemical class 0.000 description 1
- 239000012670 alkaline solution Substances 0.000 description 1
- 230000003113 alkalizing effect Effects 0.000 description 1
- 235000019270 ammonium chloride Nutrition 0.000 description 1
- 239000012736 aqueous medium Substances 0.000 description 1
- RQPZNWPYLFFXCP-UHFFFAOYSA-L barium dihydroxide Chemical compound [OH-].[OH-].[Ba+2] RQPZNWPYLFFXCP-UHFFFAOYSA-L 0.000 description 1
- 229910001863 barium hydroxide Inorganic materials 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- RJTANRZEWTUVMA-UHFFFAOYSA-N boron;n-methylmethanamine Chemical compound [B].CNC RJTANRZEWTUVMA-UHFFFAOYSA-N 0.000 description 1
- 239000011575 calcium Substances 0.000 description 1
- 229910001861 calcium hydroxide Inorganic materials 0.000 description 1
- 150000001786 chalcogen compounds Chemical class 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- KRVSOGSZCMJSLX-UHFFFAOYSA-L chromic acid Substances O[Cr](O)(=O)=O KRVSOGSZCMJSLX-UHFFFAOYSA-L 0.000 description 1
- 239000011651 chromium Substances 0.000 description 1
- BFGKITSFLPAWGI-UHFFFAOYSA-N chromium(3+) Chemical class [Cr+3] BFGKITSFLPAWGI-UHFFFAOYSA-N 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 210000001520 comb Anatomy 0.000 description 1
- 238000010668 complexation reaction Methods 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 229910001431 copper ion Inorganic materials 0.000 description 1
- YOCUPQPZWBBYIX-UHFFFAOYSA-N copper nickel Chemical compound [Ni].[Cu] YOCUPQPZWBBYIX-UHFFFAOYSA-N 0.000 description 1
- OPQARKPSCNTWTJ-UHFFFAOYSA-L copper(ii) acetate Chemical compound [Cu+2].CC([O-])=O.CC([O-])=O OPQARKPSCNTWTJ-UHFFFAOYSA-L 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000003792 electrolyte Substances 0.000 description 1
- 230000005670 electromagnetic radiation Effects 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 150000002240 furans Chemical class 0.000 description 1
- AWJWCTOOIBYHON-UHFFFAOYSA-N furo[3,4-b]pyrazine-5,7-dione Chemical compound C1=CN=C2C(=O)OC(=O)C2=N1 AWJWCTOOIBYHON-UHFFFAOYSA-N 0.000 description 1
- 238000005246 galvanizing Methods 0.000 description 1
- PQTCMBYFWMFIGM-UHFFFAOYSA-N gold silver Chemical compound [Ag].[Au] PQTCMBYFWMFIGM-UHFFFAOYSA-N 0.000 description 1
- 150000002483 hydrogen compounds Chemical class 0.000 description 1
- 150000004679 hydroxides Chemical class 0.000 description 1
- 238000001746 injection moulding Methods 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 238000011068 loading method Methods 0.000 description 1
- 239000011777 magnesium Substances 0.000 description 1
- 229910001862 magnesium hydroxide Inorganic materials 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 229910052976 metal sulfide Inorganic materials 0.000 description 1
- 238000000465 moulding Methods 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 229910000510 noble metal Inorganic materials 0.000 description 1
- 239000012454 non-polar solvent Substances 0.000 description 1
- 239000006259 organic additive Substances 0.000 description 1
- 239000003960 organic solvent Substances 0.000 description 1
- PIBWKRNGBLPSSY-UHFFFAOYSA-L palladium(II) chloride Chemical compound Cl[Pd]Cl PIBWKRNGBLPSSY-UHFFFAOYSA-L 0.000 description 1
- 239000006223 plastic coating Substances 0.000 description 1
- 239000002798 polar solvent Substances 0.000 description 1
- 229920002851 polycationic polymer Polymers 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- 238000006116 polymerization reaction Methods 0.000 description 1
- 229920000036 polyvinylpyrrolidone Polymers 0.000 description 1
- 235000013855 polyvinylpyrrolidone Nutrition 0.000 description 1
- 239000001267 polyvinylpyrrolidone Substances 0.000 description 1
- 239000011591 potassium Substances 0.000 description 1
- KWYUFKZDYYNOTN-UHFFFAOYSA-M potassium hydroxide Inorganic materials [OH-].[K+] KWYUFKZDYYNOTN-UHFFFAOYSA-M 0.000 description 1
- 238000004886 process control Methods 0.000 description 1
- 150000003233 pyrroles Chemical class 0.000 description 1
- 239000008237 rinsing water Substances 0.000 description 1
- 239000010865 sewage Substances 0.000 description 1
- 239000011734 sodium Substances 0.000 description 1
- 239000012279 sodium borohydride Substances 0.000 description 1
- 229910000033 sodium borohydride Inorganic materials 0.000 description 1
- 239000002904 solvent Substances 0.000 description 1
- 238000005507 spraying Methods 0.000 description 1
- 150000003464 sulfur compounds Chemical class 0.000 description 1
- 150000005622 tetraalkylammonium hydroxides Chemical class 0.000 description 1
- 229930192474 thiophene Natural products 0.000 description 1
- 150000003577 thiophenes Chemical class 0.000 description 1
- 239000003440 toxic substance Substances 0.000 description 1
- 238000007704 wet chemistry method Methods 0.000 description 1
Images
Classifications
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D5/00—Electroplating characterised by the process; Pretreatment or after-treatment of workpieces
- C25D5/54—Electroplating of non-metallic surfaces
- C25D5/56—Electroplating of non-metallic surfaces of plastics
Definitions
- the invention relates to a method for selective or partial electrolytic Metallizing surfaces of molded plastic parts made of electrically non-conductive Materials which are coated with plastics for the following treatment Holding elements are attached.
- a number of metallization processes have therefore been developed with which the non-conductive surfaces without electroless metallization directly with metal can be coated.
- such methods are particularly described for the metallization of the borehole walls in printed circuit boards.
- the direct electrolytic metallization in borehole metallization is opposite a metal coating of other plastic parts, such as Sanitary fittings or with three-dimensional in comparison to plates Contour, but much easier, because smaller areas can be metallized are.
- the distances of the non-conductive to be overcome in the metallization Sustrat surface is shorter in the case of borehole metallization on printed circuit boards and therefore easier to reach.
- EP 0 298 298 A2 describes a method for electrolytic metallization described a non-conductor in which the non-conductor surface to be metallized is coated with a metal chalcogenide.
- the metal chalcogenide is obtained by treating the surfaces with a palladium colloid Tin compounds as a protective colloid, and subsequent treatment with a soluble metal chalcogenide compound, preferably a metal sulfide, educated.
- EP 0 320 601 A2 describes a method for metallizing non-conductors, in which the non-conductor surfaces first with a permanganate solution are treated, referring to this insoluble manganese dioxide forms.
- the manganese dioxide layer is then treated with a chalcogen compound, preferably containing sulfur compounds Solution converted.
- a metal layer can then be deposited electrolytically become.
- a chalcogenide layer can be sufficient high electrical conductivity by means of a special pretreatment for subsequent metallization of drill holes in printed circuit boards become.
- the conductivity of such a layer is not sufficient for that Metallization of large-area non-conductive substrates, because there too large bridged non-conductive paths from the contact points of the power supply Need to become.
- US-A-39 84 290 discloses a method in which the borehole walls a circuit board first in a solution containing the connection of one nobler metal than copper, is treated, whereby a metal layer on the copper surfaces of the circuit board and the non-conductor surfaces. Subsequently, the metal layer from the copper surfaces again removed, and then the metal layer on the non-conductive surfaces and electrolytically metallized the copper surfaces.
- Non-metallic objects to be metallized are first with a solution containing a noble metal, for example treated with a palladium activator stabilized with tin compounds and then electrolytically coated in a metallization bath.
- Suitable organic additives are contained in the metallization bath, with which a preferred metal deposition on the previous process step Formed metal layers promoted on the non-conductive areas becomes.
- EP 0 456 982 A1 describes a method for the electrolytic metallization of a Disclosed substrate, in which the substrate surfaces first, for example catalyzed in a solution containing a palladium colloid solution stabilized with tin compounds are then the tin compounds in a known manner are removed from the substrate surface, the one used for this Solution additionally contains the connection of a metal that is more noble than tin and the surfaces are subsequently electrolytically metallized.
- German laid-open specification 39 07 789 A1 there is a process for the deposition an electrically conductive layer on an electrically non-conductive Surface specified, in which the surface is initially an electrical conductive base layer, which is characterized by an electroless chemical polymerization at least one conductive polymer is produced on the surface, is generated and then another electrically conductive layer, for example another conductive polymer layer or a metal layer, is deposited.
- This process can also be used for substrates with larger sizes non-conductive surfaces can be directly electrolytically metallized if the the aforementioned procedure is repeated several times. However, this is not practical because it leads to extremely long process times.
- the conductive polymer layers formed on the surfaces have A sufficiently high conductivity only a short time after their manufacture on. After that, it quickly falls off, so that large-area metallization is not possible anyway.
- EP 0 616 053 A1 describes a method for the direct metallization of non-conductive Surfaces disclosed, in which the surfaces first with a Cleaner / conditioning solution, then with an activator solution, for example a palladium colloid solution, stabilized with tin compounds, and then treated with a solution containing compounds of a metal, which is nobler than tin, as well as an alkali hydroxide and a complexing agent. Thereafter, the surfaces can be in a containing a reducing agent Solution treated and finally metallized.
- an activator solution for example a palladium colloid solution
- tin compounds of a metal which is nobler than tin
- an alkali hydroxide and a complexing agent an alkali hydroxide and a complexing agent
- the present invention is therefore based on the problem, the disadvantages to avoid the prior art and a method for selective or partial electrolytic metallization of surfaces of substrates (plastic molded parts) Made of electrically non-conductive materials on the outside with plastic coated holding elements, for example support frames, are attached Find.
- the substrate surfaces can be between some or all process steps be rinsed.
- adsorption-promoting solutions are in particular So-called conditioning solutions used in the manufacture of printed circuit boards used. These are usually aqueous solutions in which in particular Polyelectrolytes, such as polycationic polymers, with a molecular weight above 10,000 g / mol are included. After treating the non-conductive surfaces with such a conditioning solution not only those that are to be metallized, as desired Plastic surfaces coated with metal, but also - unnecessarily - The holding elements coated on the outside with plastics.
- the holding elements it is not necessary to Free the holding elements from the metal after use, as the substrates not be brought into contact with a conditioning solution. Rather, the holding elements after metallizing the substrate surfaces and removing the metallized substrates without further treatment be immediately returned to the production cycle and immediately for the metallization of further non-conductive substrates become. Should be on the contact tips / metal tips during the Metallization has deposited metals, they must be removed from time to time, to avoid contact problems and contamination of the bathroom.
- Another advantage of the method is that the surfaces of the metallizing substrates can also be partially metallized by Parts of the surfaces are covered with a suitable material. There this material also when carrying out the method according to the invention is not coated, a subsequent removal of the material is very easily possible without selective treatment if necessary Removal of the metal deposited there the metal layers on the damage metallized substrate.
- the method is particularly electrical for three-dimensionally structured non-conductive molded parts, their enveloping surface, that is the smallest possible surface an envelope of an object, is significantly smaller than its surface, for example for plastic parts for the sanitary area, automobile construction, or suitable for electrically shielded housings, because their disadvantage, the Exploiting treatment solutions from the baths is often only in practice unsatisfactory can be avoided.
- direct electrolytic metallization in the method according to the invention without preceding electroless Metallization drops smaller amounts of toxic and complexing agents Sewage on than with conventional processes for plastic metallization.
- the method according to the invention is therefore less expensive overall, less complex and environmentally friendly than the state of the art known methods.
- an organic solvent such as one Diethylene glycol or ethylene glycol derivative, dimethylformamide or others polar or non-polar solvents to swell the substrate.
- organic solvent such as one Diethylene glycol or ethylene glycol derivative, dimethylformamide or others polar or non-polar solvents to swell the substrate.
- solvents can also be used in a mixture with water.
- Especially preferred treatment agents additionally contain alkalizing agents, such as for example alkali hydroxides or tetraalkylammonium hydroxides.
- the solutions can vary depending on the type of substrate to be treated at room temperature or used at an elevated temperature.
- the surfaces to be metallized pretreated in an etching solution containing chromium (VI) oxide pretreated in an etching solution containing chromium (VI) oxide.
- a solution containing chromic acid which also contains sulfuric acid may contain.
- the Treatment time from 2 to 16 minutes.
- Chromium (VI) compounds reduced to chromium (III) compounds adhering to the substrate surfaces Chromium (VI) compounds reduced to chromium (III) compounds.
- an acidic aqueous solution of sodium hydrogen sulfite be used.
- other reducing agents such as hydroxylamine.
- the substrate can be dissolved 300 ml / l of concentrated hydrochloric acid or another mineral acid, such as concentrated sulfuric acid, are treated in aqueous solution.
- This treatment is useful to the activator solution with which the substrate subsequently treated, not continuously by rinse water dilute. Since the activator also contains tin compounds in addition to palladium, the mineral acid treatment solution can also add these tin compounds contain. This will partially compensate for the carryover losses.
- the treatment time in this pre-immersion solution can vary widely can be varied. It is only important that the surfaces of the substrate are complete be wetted. Any bath temperature can be set.
- the success of the process is probably due to the fact that the adsorption of palladium particles from a colloid solution is used to make the non-conductive surface with a large number of palladium particles too occupy. Because the palladium particles come from a colloidal solution after adsorption, surround it with a protective colloid cover that covers the electrical Prevents conductivity of the deposited palladium layer.
- the activator usually consists of a mineral acid and preferably hydrochloric acid aqueous solution of a palladium colloid.
- the palladium content in the Solution can range from about 50 mg / l to about 500 mg / l solution, in particular between about 150 mg / l and 250 mg / l solution.
- a palladium salt is used to make the colloid.
- tin (II) salt is added to the solution, which in the reaction of the tin (II) salt is partially oxidized with palladium salt to tin (IV) compounds.
- the Tin content of the solution can range from 2 g / l to 50 g / l, preferably between 10 g / l and 25 g / l solution.
- the colloid solutions are described in US-A-30 11 920 and US-A-36 82 671 Method made.
- the concentration range is the hydrochloric acid between 2 wt .-% and 30 wt .-%, preferably between 5 wt% and 15 wt% in water.
- hydrochloric acid content below 0.5 mol / l solution, there is no longer enough palladium from the activator adsorbed on the surface to allow rapid metal growth during to achieve the metallization.
- the substrate is rinsed again.
- the reduction ability of the tin (II) compounds is used, order in the subsequent treatment step from a metal, preferably Solution containing copper ions the ions to metal, preferably to metallic copper, and in this way between the To deposit palladium particles of metal, for example copper. Moreover the disruptive tin (II) / tin (IV) layer is removed in this way.
- this solution is used as a metal compound used a copper compound.
- a metal compound used a copper compound for example, silver Gold, palladium and other precious metals are suitable.
- copper compounds come all compounds that are particularly soluble in aqueous media, for example Salts such as copper sulfate and copper acetate.
- the concentration of the metal is in the range of 0.1 g / l to 50 g / l aqueous solution and preferably adjusted from 0.5 g / l to 15 g / l solution.
- the solution containing metal ions is preferably alkaline.
- the solution contains an alkali or alkaline earth metal hydroxide and also a complexing agent for the metal.
- Lithium hydroxide in particular, has been found to be the alkali metal hydroxide turned out to be cheap.
- other hydroxides are basically such as sodium, potassium, magnesium, calcium or barium hydroxide suitable.
- Their concentration is in the range from 0.1 mol / l to 3 mol / l aqueous solution, preferably in the range of 0.5 mol / liter to 1.5 mol / liter Solution.
- the complexing agent also contained serves to the metal in the alkaline Keep solution solved. Therefore, this must be sufficiently large Have complexation constants for the metal and are present in an amount, to at least prevent the precipitation of metal hydroxides.
- suitable complexing agents have in particular compounds such as ethanolamine, Ethylenediaminetetraacetic acid and its salts, tartaric acid and its Salts, citric acid and their salts as well as N, N, N ', N'-tetrakis (2-hydroxypropyl) ethylenediamine, proven.
- the operating temperature of the solution containing the metal ions can be as a whole practical range, but preferably in the range of 30 ° C to 65 ° C and in a preferred embodiment between 50 ° C and 60 ° C can be set.
- the substrate rinsed again.
- the first reduction of the metal ions can be done by a further reduction step get supported.
- boron / hydrogen compounds have been found found to be the cheapest.
- the substrate is then rinsed again to remove residues of the reducing agent completely removed from the substrate surface.
- the extremely thin layer shows a sufficient high electrical conductivity for the subsequent electrolytic metallization on.
- All electrodepositable metals can be used on the after Process pretreated substrate surface without further electroless metallization be directly put down.
- copper Nickel, palladium and other precious metals are suitable. Can on these metals other metals are deposited. It is also possible that to partially cover the first metal layer with dielectric layers in order to make decorative To produce effects or functional properties.
- Such dielectric layers can also be placed in front of any of the above Treatment steps applied to the surface of the substrate to prevent metallization at this point.
- bodies made of acrylonitrile / butadiene / styrene copolymers are used as substrates or their mixtures metallized with other non-conductive materials.
- chromium (VI) ions containing pretreatment solutions substrates made of polyvinyl chloride in particular are hardly attacked. Therefore, holding elements, such as support frames, are used in electrolytic Metallizing plastics coated with this material, to avoid their metallization during the electrolytic treatment.
- the substrates are treated with the treatment solutions by immersion, spraying, Contacted gushes or splashes.
- a uniformly shiny copper layer was deposited exclusively on the ABS molded parts within one hour at a current density of 2 A / dm 2 . No copper deposits were found on the supports covered with polyvinyl chloride.
- the metal layers had an adhesive strength of more than 1 N / mm in the peel test according to the DE standard DIN.
- Example 1 The process described in Example 1 was repeated, but in process step 6 with a nickel bath (Watts type) instead of the sulfuric acid Copper bath. The same result was obtained with regard to the selectivity of the process as well as the adhesive strength of the deposited metal layer reached.
- a nickel bath Watts type
- An ABS sample was partially coated with a polyester layer and then treated as described in Example 1.
- the polyester layer was not metallized.
- a molded part (telephone housing), which in a so-called two-shot process in the injection molding process partially made of ABS-containing plastic (Cycoloy C1100 from General Electric Plastics, Ruesselsheim, Germany) and partly from a polyamide (Noryl GTX924 from General Electric Plastics) was treated as described in Example 1. Only the ABS-containing plastic was covered with metal, while the Polyamide surface was completely metal-free.
- Example 2 Analogously to Example 1, a frame with attached ABS molded parts was immersed in a solution heated to 45 ° C. for two minutes before conditioning after process step 3 (pre-immersion) to condition the ABS surfaces 1 g of the polymer Luresin KNU (product from BASF, Ludwigshafen, Germany) per liter of aqueous solution contained. After this treatment step, both the ABS surfaces and the tegumite surface of the frame were metallized.
- the surface conductivity of the layer formed before the metallization was measured. After the treated molded part has been rinsed and dried, a resistance measurement with two measuring electrodes took place, which were at a distance of 1 cm were pressed onto the treated surface of the molded part.
- the lateral progression of the copper layer was also determined.
- a surface conductivity of approximately 50 pSiemens ( ⁇ S) was measured.
- Fig. 1 shows the conductivity in ⁇ S and the growth of the metal front in cm after 1.5 minutes (process step 6) the concentration of hydrochloric acid (mol / l) in the activator (process step 4).
- the empirical values indicate that the conductivity is almost increasing linearly with the acid concentration, while the metal deposition rate, after a steep rise above a minimum concentration cannot be increased in proportion to the concentration.
- Example 7 was repeated and the samples were examined depending on different parameters.
- Table 1 shows the spread of the metal front of two samples up to a metallization time of 2.5 minutes at a galvanizing voltage of 0.6 volts.
- Table 2 shows the calculated growth rate (cm / min) from a large number of samples metallized at different electroplating voltages at different times since the start of metallization. It is striking that the maximum growth rate is reached about 2 minutes after the start of the coating and then remains approximately constant.
- Table 3 and Figure 2 show that the growth rate is dependent on the bath temperature during the treatment according to process step c) in claim 1 and step 5 in examples 1 and 8, respectively.
- This bath Cu-LINK
- With a low and / or short dwell time a low conductivity is set on the substrate, which results in correspondingly long metallization times.
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- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Electrochemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Chemically Coating (AREA)
- Electroplating Methods And Accessories (AREA)
- Printing Elements For Providing Electric Connections Between Printed Circuits (AREA)
- Manufacturing Of Printed Wiring (AREA)
Description
Voraussetzung ist allerdings, daß vor der Behandlung der Substrate mit dem Aktivator, diese keinesfalls mit Mitteln in Berührung kommen, die eine Adsorption der kolloidalen Teilchen fördern.
Neben den dem Fachmann bekannten Lösungen ist hier vor allen Dingen auf eventuell verunreinigte Spülwässer zu achten, insbesondere wenn Kreislaufwässer in der Fabrik benutzt werden.
Verschleppungen aus Konditionierungsbädern paralleler Fertigungsanlagen in diesen Wasserkreislauf sind ebenso zu vermeiden wie der Eintrag von Mitteln, die wie die adsorptionsfördernden Polyelektrolyten wirken können. Daher ist auch die parallele Verwendung von Gestellen sowohl für die Leiterplattenfertigung als auch für den erfindungsgemäßen Zweck nicht sinnvoll.
Die Polyesterschicht wurde nicht metallisiert.
1 g des Polymeren Luresin KNU (Produkt der Firma BASF, Ludwigshafen, Deutschland) pro Liter wäßrige Lösung
enthielt. Nach diesem Behandlungsschritt waren sowohl die ABS-Oberflächen als auch die Tegumit-Oberfläche des Gestelles metallisiert.
Es wurde das Wachstum der Metallfront auf der Substratoberfläche, ausgehend von der Kathode gemessen. Die Resultate sind in den nachfolgenden Tabellen aufgeführt und in den Abbildungen graphisch dargestellt. Als Proben wurden 15 cm lange und 6 cm breite Platten aus ABS erfindungsgemäß behandelt, dann an einer Schmalseite kontaktiert und verkupfert.
Tabelle 1 zeigt die Ausbreitung der Metallfront von zwei Proben bis zu einer Metallisierungszeit von 2,5 Minuten bei einer Galvanisierspannung von 0,6 Volt.
Tabelle 2 zeigt die errechnete Wachstumsgeschwindigkeit (cm/min) aus einer Vielzahl von bei unterschiedlichen Galvanisierspannungen metallisierten Proben zu verschiedenen Zeitpunkten seit Metallisierungsbeginn.
Auffällig ist, daß etwa 2 min nach Beschichtungsbeginn die maximale Wachstumsrate erreicht ist und dann annähernd konstant bleibt. Diese Tabellenwerte sind in Abbildung 2 übertragen worden.
Tabelle 3 und Abbildung 2 zeigen, daß die Wachstumsgeschwindigkeit von der Badtemperatur während der Behandlung gemäß Verfahrensschritt c) in Anspruch 1 bzw. Schritt 5 in den Beispielen 1 und 8 abhängig ist.
Bei Verweilzeiten in diesem Bad (Cu-LINK) von 1 bis 10 min bei den Temperaturen 27°C, 45°C, 60°C ergeben sich unterschiedliche Metallisierungsdauern im elektrolytischen Kupferbad für die benutzten Proben von 15 x 6 cm Größe. Bei niedriger und / oder geringer Verweilzeit wird eine geringe Leitfähigkeit auf dem Substrat eingestellt, wodurch sich entsprechend lange Metallisierungszeiten ergeben.
Andererseits ist zu erkennen, daß zwischen etwa 45°C und 60°C Badtemperatur bei derselben Verweilzeit kaum ein Unterschied in der Beschichtungsdauer und damit der durchschnittlichen Wachstumsgeschwindigkeit besteht. Bei Verlängerung der Verweildauer in Cu-LINK-Bad läßt sich dagegen die Abscheidungsgeschwindigkeit im Metallisierungsbad steigern bzw. die dortige Verweildauer verkürzen.
Zeit [min] | Probe 1 | Weg [cm] Probe 2 | Mittelwert |
0 | 0 | 0 | 0 |
½ | <0,5 | 0,7 | ~0,5 |
1 | 2,8 | 2,5 | 2,7 |
1½ | 6,5 | 7,5 | 7,0 |
2 | 8,5 | 10 | 9,3 |
2½ | 12,5 | 10 | 11,3 |
Zeit [min] | Galvanisierspannung [V] | |||
0,45 | 0,60 | 0,80 | 1,00 | |
0 | 0 | 0 | 0 | 0 |
½ | 0,4 | 2.2 | 2,5 | 0,8 |
1 | 2,6 | 2,8 | 4,3 | 7,7 |
1½ | 2,0 | 3,8 | 5,5 | 9,0 |
2 | 2,4 | 3,9 | 5,7 | 9,5 |
2½ | 2,6 | 4,2 | 5,1 | |
3 | 2,6 | 3,8 | ||
3½ | 3,4 | 3,8 | ||
4 | 3,0 | |||
4½ | 3,0 | |||
5 | 3,0 |
Zeit [min] | Temperatur [°C] | ||
27 | 45 | 60 | |
1 | 10,0 | 9,0 | |
3 | 8,0 | 10,0 | |
5 | 6,0 | 5,5 | |
7 | 6,0 | 5,2 | 5,5 |
10 | 5,0 | 4,0 | 3,2 |
Claims (7)
- Verfahren zum selektiven elektrolytischen Metallisieren von Kunststoffformteilen aus elektrisch nichtleitenden Materialien, welche für die folgende Behandlung an mit Kunststoff beschichteten, nicht zu metallisierenden Halteelementen befestigt werden, umfassend die Verfahrensschritte:a) Auswählen von Polyvinylchlorid für die Kunststoffbeschichtung der Halteelemente,b) Vorbehandeln der Kunststoffformteile mittels einer Chrom-(Vl)-oxid enthaltenden Ätzlösung,c) anschließend Behandeln der Kunststoffformteile mit einer kolloidalen sauren Lösung von Palladium/Zinnverbindungen, unter Vermeidung eines vorherigen Kontaktes des Materials für die Halteelemente mit adsorptionsfördernden Lösungen,d) Behandeln der Kunststoffformteile mit einer Lösung, enthaltend eine mittels Zinn-(ll)-Verbindungen reduzierbare lösliche Metallverbindung, ein Alkali- oder Erdalkalimetallhydroxid und einen Komplexbildner für das Metall in einer mindestens die Ausfällung von Metallhydroxiden verhindernden Menge,e) elektrolytisches Metallisieren der Kunststoffformteile.
- Verfahren nach Anspruch 1, dadurch gekennzeichnet, daß die Kunststoffformteile partiell metallisiert werden, indem Teile der Oberflächen der Kunststoffformteile vor Durchführung des Verfahren mit einem Material, ausgewählt aus der Gruppe Polyvinylchlorid, Polyester oder Polyamid, abgedeckt werden.
- Verfahren nach einem der vorstehenden Ansprüche, dadurch gekennzeichnet, daß die Kunststoffformteile zwischen einigen oder allen Verfahrensschritten gespült werden.
- Verfahren nach einem der vorstehenden Ansprüche, gekennzeichnet durch eine Kupferverbindung als lösliche Metallverbindung.
- Verfahren nach einem der vorstehenden Ansprüche, gekennzeichnet durch Lithiumhydroxid als Alkalihydroxid.
- Verfahren nach einem der vorstehenden Ansprüche, gekennzeichnet durch Weinsäure und/oder Tartrat als Komplexbildner.
- Verfahren nach einem der vorstehenden Ansprüche, dadurch gekennzeichnet, daß Kunststoffformteile von aus Acrylnitril/Butadien/Styrol-Copolymeren oder deren Mischungen mit anderen nichtleitenden Materialien oder aus Polycarbonat bestehenden Materialien metallisiert werden.
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE19510855A DE19510855C2 (de) | 1995-03-17 | 1995-03-17 | Verfahren zum selektiven oder partiellen elektrolytischen Metallisieren von Substraten aus nichtleitenden Materialien |
DE19510855 | 1995-03-17 | ||
PCT/EP1996/001190 WO1996029452A1 (de) | 1995-03-17 | 1996-03-15 | Verfahren zum selektiven oder partiellen elektrolytischen metallisieren von oberflächen von substraten aus nichtleitenden materialien |
Publications (2)
Publication Number | Publication Date |
---|---|
EP0815292A1 EP0815292A1 (de) | 1998-01-07 |
EP0815292B1 true EP0815292B1 (de) | 2000-01-26 |
Family
ID=7757663
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
EP96907505A Revoked EP0815292B1 (de) | 1995-03-17 | 1996-03-15 | Verfahren zum selektiven oder partiellen elektrolytischen metallisieren von oberflächen von substraten aus nichtleitenden materialien |
Country Status (10)
Country | Link |
---|---|
EP (1) | EP0815292B1 (de) |
JP (1) | JPH11502263A (de) |
KR (1) | KR19980703108A (de) |
AT (1) | ATE189274T1 (de) |
BR (1) | BR9607848A (de) |
CA (1) | CA2210883A1 (de) |
DE (2) | DE19510855C2 (de) |
ES (1) | ES2142572T3 (de) |
HK (1) | HK1008552A1 (de) |
WO (1) | WO1996029452A1 (de) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE102006042269A1 (de) * | 2006-09-08 | 2008-03-27 | Gerhardi Kunststofftechnik Gmbh | Verfahren zum galvanischen Beschichten von Bauteilen aus Kunststoffen |
US9951433B2 (en) | 2014-01-27 | 2018-04-24 | Okuno Chemical Industries Co., Ltd. | Conductive film-forming bath |
US10036097B2 (en) | 2012-12-21 | 2018-07-31 | Okuno Chemical Industries Co., Ltd. | Conductive coating film forming bath |
Families Citing this family (16)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE19857290C2 (de) * | 1998-12-14 | 2001-02-01 | Lpw Chemie Gmbh | Verfahren zur direkten Metallisierung der Oberfläche eines Kunststoffgegenstandes |
US6541080B1 (en) | 1998-12-14 | 2003-04-01 | Enthone Inc. | Double-dip Pd/Sn crosslinker |
DE10208674B4 (de) * | 2002-02-28 | 2011-07-07 | BIA Kunststoff- und Galvanotechnik GmbH & Co. KG, 42655 | Verfahren zur Herstellung galvanisch beschichteter Elemente mit hinterleuchtbaren Symbolen und nach dem Verfahren hergestellte Elemente |
DE10223081A1 (de) * | 2002-05-17 | 2003-12-04 | Hansgrohe Ag | Verfahren zur Herstellung von galvanisierten Sanitärgegenständen aus Kunststoff |
KR100913265B1 (ko) * | 2002-07-30 | 2009-08-21 | 엘지전자 주식회사 | 전원 공급 단자 |
DE102005026633A1 (de) * | 2005-06-03 | 2006-12-28 | Hansgrohe Ag | Verfahren zur Herstellung von galvanisierten Sanitärgegenständen aus Kunststoff |
DE102005031454A1 (de) * | 2005-07-04 | 2007-01-11 | Huf Hülsbeck & Fürst Gmbh & Co. Kg | Türgriff, Türgriff-Gehäuse und Verfahren zum Herstellen des Türgriff-Gehäuses |
DE102005051632B4 (de) * | 2005-10-28 | 2009-02-19 | Enthone Inc., West Haven | Verfahren zum Beizen von nicht leitenden Substratoberflächen und zur Metallisierung von Kunststoffoberflächen |
EP1988192B1 (de) | 2007-05-03 | 2012-12-05 | Atotech Deutschland GmbH | Verfahren zum Aufbringen einer Metallbeschichtung auf ein nichtleitfähiges Substrat |
EP2305856A1 (de) | 2009-09-28 | 2011-04-06 | ATOTECH Deutschland GmbH | Verfahren zum Aufbringen einer Metallbeschichtung auf ein nichtleitfähiges Substrat |
EP2602357A1 (de) | 2011-12-05 | 2013-06-12 | Atotech Deutschland GmbH | Neuartiges Haftmittel zur Metallisierung von Substratoberflächen |
EP2639333A1 (de) | 2012-03-15 | 2013-09-18 | Atotech Deutschland GmbH | Verfahren zum Metallisieren nichtleitender Kunststoffoberflächen |
EP2639332A1 (de) | 2012-03-15 | 2013-09-18 | Atotech Deutschland GmbH | Verfahren zum Metallisieren nichtleitender Kunststoffoberflächen |
EP2644744A1 (de) | 2012-03-29 | 2013-10-02 | Atotech Deutschland GmbH | Verfahren zur Förderung der Haftung zwischen dielektrischen Substraten und Metallschichten |
CN114107984A (zh) | 2013-09-26 | 2022-03-01 | 德国艾托特克公司 | 用于衬底表面金属化的新颖粘着促进方法 |
ES2727075T5 (es) | 2015-02-23 | 2022-05-27 | Macdermid Enthone Inc | Composición inhibidora para bastidores cuando se utilizan mordientes exentos de cromo en un proceso de galvanizado sobre materiales plásticos |
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Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5376248A (en) * | 1991-10-15 | 1994-12-27 | Enthone-Omi, Inc. | Direct metallization process |
DE4206680C1 (de) * | 1992-02-28 | 1994-01-27 | Schering Ag | Verfahren zur Metallisierung von Nichtleiteroberflächen und die Verwendung von Hydroxymethansulfinsäure im Verfahren |
CA2119050C (en) * | 1993-03-18 | 1999-11-23 | Nayan H. Joshi | Self accelerating and replenishing non-formaldehyde immersion coating method and composition |
GB2277745A (en) * | 1993-04-20 | 1994-11-09 | Enthone Omi | Post activator solution for use in electroplating non-conductive substrates e.g in plating through holes in PCB,s |
-
1995
- 1995-03-17 DE DE19510855A patent/DE19510855C2/de not_active Revoked
-
1996
- 1996-03-15 CA CA002210883A patent/CA2210883A1/en not_active Abandoned
- 1996-03-15 BR BR9607848A patent/BR9607848A/pt not_active IP Right Cessation
- 1996-03-15 WO PCT/EP1996/001190 patent/WO1996029452A1/de not_active Application Discontinuation
- 1996-03-15 DE DE59604301T patent/DE59604301D1/de not_active Revoked
- 1996-03-15 AT AT96907505T patent/ATE189274T1/de active
- 1996-03-15 JP JP8528081A patent/JPH11502263A/ja active Pending
- 1996-03-15 ES ES96907505T patent/ES2142572T3/es not_active Expired - Lifetime
- 1996-03-15 KR KR1019970706510A patent/KR19980703108A/ko not_active Application Discontinuation
- 1996-03-15 EP EP96907505A patent/EP0815292B1/de not_active Revoked
-
1998
- 1998-06-30 HK HK98108815A patent/HK1008552A1/xx not_active IP Right Cessation
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE102006042269A1 (de) * | 2006-09-08 | 2008-03-27 | Gerhardi Kunststofftechnik Gmbh | Verfahren zum galvanischen Beschichten von Bauteilen aus Kunststoffen |
DE102006042269B4 (de) * | 2006-09-08 | 2014-08-28 | Automobile Patentverwaltungs- und -verwertungsgesellschaft mbH | Verfahren zum galvanischen Beschichten von Trägerteilen aus Kunststoffen |
US10036097B2 (en) | 2012-12-21 | 2018-07-31 | Okuno Chemical Industries Co., Ltd. | Conductive coating film forming bath |
US9951433B2 (en) | 2014-01-27 | 2018-04-24 | Okuno Chemical Industries Co., Ltd. | Conductive film-forming bath |
Also Published As
Publication number | Publication date |
---|---|
DE19510855C2 (de) | 1998-04-30 |
EP0815292A1 (de) | 1998-01-07 |
CA2210883A1 (en) | 1996-09-26 |
ES2142572T3 (es) | 2000-04-16 |
ATE189274T1 (de) | 2000-02-15 |
HK1008552A1 (en) | 1999-05-14 |
KR19980703108A (ko) | 1998-10-15 |
BR9607848A (pt) | 1998-07-14 |
JPH11502263A (ja) | 1999-02-23 |
WO1996029452A1 (de) | 1996-09-26 |
DE19510855A1 (de) | 1996-09-19 |
DE59604301D1 (de) | 2000-03-02 |
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