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EP0374288B1 - Circuit intégré diminuant le courant inverse d'un transistor polarisé inversement - Google Patents

Circuit intégré diminuant le courant inverse d'un transistor polarisé inversement Download PDF

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Publication number
EP0374288B1
EP0374288B1 EP88121417A EP88121417A EP0374288B1 EP 0374288 B1 EP0374288 B1 EP 0374288B1 EP 88121417 A EP88121417 A EP 88121417A EP 88121417 A EP88121417 A EP 88121417A EP 0374288 B1 EP0374288 B1 EP 0374288B1
Authority
EP
European Patent Office
Prior art keywords
transistor
base
collector
emitter
potential
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
EP88121417A
Other languages
German (de)
English (en)
Other versions
EP0374288A1 (fr
Inventor
Frank-Lothar Dipl.-Ing. Schwertlein (Fh)
Michael Ing. Grad. Lenz
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Siemens AG
Original Assignee
Siemens AG
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens AG filed Critical Siemens AG
Priority to DE3851839T priority Critical patent/DE3851839D1/de
Priority to AT88121417T priority patent/ATE112868T1/de
Priority to EP88121417A priority patent/EP0374288B1/fr
Priority to US07/455,553 priority patent/US4945444A/en
Publication of EP0374288A1 publication Critical patent/EP0374288A1/fr
Application granted granted Critical
Publication of EP0374288B1 publication Critical patent/EP0374288B1/fr
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

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Classifications

    • G—PHYSICS
    • G05—CONTROLLING; REGULATING
    • G05F—SYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES
    • G05F1/00—Automatic systems in which deviations of an electric quantity from one or more predetermined values are detected at the output of the system and fed back to a device within the system to restore the detected quantity to its predetermined value or values, i.e. retroactive systems
    • G05F1/10—Regulating voltage or current
    • G05F1/46—Regulating voltage or current wherein the variable actually regulated by the final control device is dc
    • G05F1/56—Regulating voltage or current wherein the variable actually regulated by the final control device is dc using semiconductor devices in series with the load as final control devices
    • G05F1/565—Regulating voltage or current wherein the variable actually regulated by the final control device is dc using semiconductor devices in series with the load as final control devices sensing a condition of the system or its load in addition to means responsive to deviations in the output of the system, e.g. current, voltage, power factor
    • G05F1/569—Regulating voltage or current wherein the variable actually regulated by the final control device is dc using semiconductor devices in series with the load as final control devices sensing a condition of the system or its load in addition to means responsive to deviations in the output of the system, e.g. current, voltage, power factor for protection
    • G05F1/571—Regulating voltage or current wherein the variable actually regulated by the final control device is dc using semiconductor devices in series with the load as final control devices sensing a condition of the system or its load in addition to means responsive to deviations in the output of the system, e.g. current, voltage, power factor for protection with overvoltage detector
    • G—PHYSICS
    • G05—CONTROLLING; REGULATING
    • G05F—SYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES
    • G05F1/00—Automatic systems in which deviations of an electric quantity from one or more predetermined values are detected at the output of the system and fed back to a device within the system to restore the detected quantity to its predetermined value or values, i.e. retroactive systems
    • G05F1/10—Regulating voltage or current
    • G05F1/46—Regulating voltage or current wherein the variable actually regulated by the final control device is dc
    • G05F1/56—Regulating voltage or current wherein the variable actually regulated by the final control device is dc using semiconductor devices in series with the load as final control devices
    • G05F1/565—Regulating voltage or current wherein the variable actually regulated by the final control device is dc using semiconductor devices in series with the load as final control devices sensing a condition of the system or its load in addition to means responsive to deviations in the output of the system, e.g. current, voltage, power factor
    • G05F1/569—Regulating voltage or current wherein the variable actually regulated by the final control device is dc using semiconductor devices in series with the load as final control devices sensing a condition of the system or its load in addition to means responsive to deviations in the output of the system, e.g. current, voltage, power factor for protection

Definitions

  • the present invention relates to a circuit arrangement according to the preamble of patent claim 1.
  • the voltage at the output is much higher than for the supply voltage.
  • the outputs are usually wired with smoothing capacitors, i.e. Voltage regulators are usually operated with a capacitive load.
  • the smoothing capacitors For example, in the event of a short circuit at the input of a low-dropout voltage regulator - caused, for example, by switching off the voltage supply at which other consumers are connected - the voltage at the input of the voltage regulator goes to zero, while at the output the voltage is initially maintained by the smoothing capacitors.
  • inverse operation a current flows in the opposite direction to the original direction, also called reverse current, which can lead to a functional impairment or even destruction of the voltage regulator, since the output transistor of the voltage regulator switches through from the output to the input of the voltage regulator in this operating mode, hereinafter referred to as inverse operation .
  • a low-dropout voltage regulator known, for example, from "Sanken New Products Information, Low-Dropout Hybrid Voltage Regulator, Sanken Electric Company"
  • an external diode is connected between the output and input of the voltage regulator as protection in the case of inverse operation such that it blocks in normal operation and in Inverse operation is leading.
  • the return current is thus carried in whole or in part via the diode.
  • the disadvantage of this is that the smoothing capacitor is again discharged quickly, just as when operating without a diode, and therefore the voltage at the output of the voltage regulator drops rapidly. However, this is particularly undesirable in the case of power supplies for microcomputer systems.
  • the object of the invention is to provide a circuit arrangement which at least reduces the reverse current of an inversely operated transistor.
  • the advantage of the invention is that due to the almost complete blocking of the transistor in inverse operation, only a small reverse current flows and the transistor itself is protected against functional impairments or destruction. This is particularly advantageous when used as an output transistor of a low-dropout voltage regulator, since the voltage at the output drops more slowly.
  • the exemplary embodiment according to FIG. 1 shows a conventional output stage of a low-dropout voltage regulator with a first transistor 4 of the PNP type, the emitter of which is acted upon by a first potential 1 and the collector of which is acted upon by a second potential 2.
  • the base of the first transistor 4, whose base-emitter path is parallel to a resistor 6, is connected to the collector of a second transistor 5 of the NPN type, the emitter of which leads to reference potential 0 and at the base of which a control potential 3 for control in the regular manner Operating case is connected.
  • the base-collector path of the first transistor 4 is connected in parallel with a transistor 7 of the PNP type, which is operated as a diode by interconnecting the base and collector and is conductive in inverse operation.
  • FIG. 2 shows the embodiment according to FIG. 1 in such a way that the collector of a third transistor 20, whose emitter is connected to the collector and whose base is connected to the base of the first transistor 4, with the base of a fourth transistor 8 of the PNP type, which is on the emitter side at the first potential 1 and on the collector side at the base of the first transistor 4, and is connected to a second and third resistor 9, 10, the first resistor 6 and the transistor 7 operated as a diode from FIG. 1 being eliminated.
  • the second resistor 9 is connected to the first potential 1 and the third resistor 10 to the collector of a fifth transistor 11 of the NPN type, the emitter of which is at reference potential O and the base of which is connected to the output of a comparator 12.
  • the inverting input of the comparator 12 is supplied with the first potential 1 and the non-inverting input with a reference potential 13.
  • the exemplary embodiment according to FIG. 2 is a sixth transistor 14 of the PNP type, a seventh transistor 15 of the PNP type, and an eighth transistor 19 of the NPN type as well as a fourth, fifth and sixth resistor 16, 17, 18.
  • the base of the seventh transistor 15 is in turn connected to a fourth resistor 16 leading to the first potential 1 and to a fifth resistor 17 connected to the collector of the eighth transistor 19.
  • an additional collector of the third transistor 20 is also connected to the base of the seventh transistor 15.
  • the base of the eighth transistor 19 lying on the emitter side at reference potential 0, like the base of the fifth transistor 11, is connected to the output of the comparator 12.
  • the collector acts as an inverse emitter and the emitter as an inverse collector. But since according to FIG 1 the basis of the first If transistor 4 is connected to the inverse collector via the first resistor 6, the first transistor 4 is turned on inversely. Through the transistor 7 operated as a diode, however, the base current of the first transistor 4 is reduced to such an extent that the reverse current I R is reduced via the inverse current gain b4 of the first transistor 4.
  • the fourth transistor 8 is clamped by the fourth transistor 8 when the first potential 1 is too high, as shown in FIG.
  • the fourth transistor 8 is activated by a monitoring circuit with the comparator 12, which compares the first potential 1 with the reference potential 13 and, in the event of an impermissible increase in the first potential 1, via the fifth transistor 11 in conjunction with the second and third resistors 9, 10 turns on the fourth transistor 8.
  • the base current I B4 of the fourth transistor 4 is equal to the quotient of the voltage across the second resistor 9 and its resistance value. Adding the third transistor 20 in the manner shown results in a base current I B8 for the fourth transistor 8 that is lower by the amount of the collector current of the third transistor 20. According to the above equation, this results in a lower reverse current I R , since the first transistor 4 is driven less.
  • the exemplary embodiment shown in FIG. 3 contains an additional stage with a sixth transistor 14, a seventh transistor 15, an eighth transistor 17, and a fourth, fifth and sixth resistor 16, 17, 18, which in normal operation are by means of the emitter and base of the first Sixth transistor 14 located in transistor 4 acts as an active scraper, comparable to the first resistor 6 from FIG. 1. If an excessively high first potential 1 occurs, the sixth transistor 14 is blocked by the comparator 12 and the subsequent circuit part, while the fourth transistor 8, also controlled by the comparator 12, the first transistor 4 clamps. As a result, the first transistor 4 is blocked, which on the one hand increases its dielectric strength and on the other hand allows a higher current gain for normal operation. A higher current gain in turn improves the efficiency of the circuit arrangement.
  • only one further diffusion structure for the collector or collectors of the third transistor 20 is expediently incorporated into the circuit arrangement brought in.
  • the base of the first transistor 4 is provided as the base of the third transistor 20 and the collector of the third transistor 20 is provided as the emitter. This has the advantage of low circuitry and less space.
  • monitoring circuit is not limited to an embodiment with a comparator.
  • circuits with Zener diodes and / or non-linear voltage dividers are also suitable.

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Radar, Positioning & Navigation (AREA)
  • Automation & Control Theory (AREA)
  • Amplifiers (AREA)
  • Electronic Switches (AREA)
  • Power Conversion In General (AREA)
  • Continuous-Control Power Sources That Use Transistors (AREA)
  • Direct Current Feeding And Distribution (AREA)
  • Rectifiers (AREA)
  • Control Of Direct Current Motors (AREA)

Claims (4)

  1. Montage intégrable comportant un premier transistor (4) possédant le type de conductivité p, dont l'émetteur est chargé par un premier potentiel (1) et dont le collecteur est chargé par un second potentiel (2), tandis qu'une première résistance (6) est branchée en parallèle avec sa voie base-émetteur et que sa base est destinée à être commandée par un second transistor (5) possédant le type de conductivité n,
    caractérisé par le fait que pour réduire le courant de retour dans le cas d'un fonctionnement inverse du premier transistor (4), une diode (7) est branchée en parallèle avec la voie base-collecteur de ce transistor de telle sorte que cette diode est conductrice lors du fonctionnement inverse.
  2. Montage suivant la revendication 1, caractérisé par le fait qu'un quatrième transistor (8) possédant un premier type de conductivité, dont la voie émetteur-collecteur est branchée en parallèle avec la voie émetteur-base du premier transistor 4, est relié, au niveau de sa base, directement ou par l'intermédiaire d'autres éléments de commutation, à un circuit de contrôle (12, 13) de telle sorte que, lors de l'apparition d'un premier potentiel élevé inadmissible (1), le quatrième transistor (8) est placé à l'état conducteur et qu'en parallèle avec la voie base-collecteur du premier transistor (4) est branchée, à la place de la diode (7), la voie base-émetteur d'un troisième transistor (20) possédant le premier type de conductivité et dont le collecteur est relié à la base du quatrième transistor (8).
  3. Montage suivant la revendication 2, caractérisé par le fait qu'un autre transistor (14) possédant un premier type de conductivité, dont la voie émetteur-collecteur est branchée en parallèle avec la voie émetteur-base du premier transistor (4), est relié, au niveau de sa base, directement ou par l'intermédiaire d'éléments de commutation, au circuit de contrôle (12, 13), de sorte que, lors de l'apparition d'un premier potentiel trop élevé (1), l'autre transistor (14), qui sinon est conducteur à un degré déterminé, se bloque et qu'un autre collecteur du troisième transistor (20) est relié, directement ou par l'intermédiaire d'autres éléments de commutation, à la base de l'autre transistor (14) de telle sorte que l'autre transistor (14), qui sinon est conducteur à un degré déterminé, se bloque.
  4. Montage suivant l'une des revendications 1 à 3, caractérisé par le fait que la base du premier transistor (4) est prévue en tant que base du troisième transistor (7) et que le collecteur du premier transistor (4) est prévu en tant qu'émetteur de ce troisième transistor, et ce conjointement avec respectivement une autre structure de diffusion en tant que collecteur(s).
EP88121417A 1988-12-21 1988-12-21 Circuit intégré diminuant le courant inverse d'un transistor polarisé inversement Expired - Lifetime EP0374288B1 (fr)

Priority Applications (4)

Application Number Priority Date Filing Date Title
DE3851839T DE3851839D1 (de) 1988-12-21 1988-12-21 Integrierbare Schaltungsanordnung zur Rückstromverringerung bei einem invers betriebenen Transistor.
AT88121417T ATE112868T1 (de) 1988-12-21 1988-12-21 Integrierbare schaltungsanordnung zur rückstromverringerung bei einem invers betriebenen transistor.
EP88121417A EP0374288B1 (fr) 1988-12-21 1988-12-21 Circuit intégré diminuant le courant inverse d'un transistor polarisé inversement
US07/455,553 US4945444A (en) 1988-12-21 1989-12-18 Integratable circuit configuration for reverse current reduction in an inversely operated transistor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
EP88121417A EP0374288B1 (fr) 1988-12-21 1988-12-21 Circuit intégré diminuant le courant inverse d'un transistor polarisé inversement

Publications (2)

Publication Number Publication Date
EP0374288A1 EP0374288A1 (fr) 1990-06-27
EP0374288B1 true EP0374288B1 (fr) 1994-10-12

Family

ID=8199697

Family Applications (1)

Application Number Title Priority Date Filing Date
EP88121417A Expired - Lifetime EP0374288B1 (fr) 1988-12-21 1988-12-21 Circuit intégré diminuant le courant inverse d'un transistor polarisé inversement

Country Status (4)

Country Link
US (1) US4945444A (fr)
EP (1) EP0374288B1 (fr)
AT (1) ATE112868T1 (fr)
DE (1) DE3851839D1 (fr)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102005011653A1 (de) * 2005-03-14 2006-09-28 Infineon Technologies Ag Schaltungsanordnung mit einem Transistor mit verringertem Rückstrom

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5179492A (en) * 1990-03-30 1993-01-12 Pioneer Electronic Corporation Protection circuit for detachable operating unit used in audio device
FR2700647B1 (fr) * 1993-01-15 1995-03-31 Legrand Sa Commutateur statique à protection intégrée pour le couplage d'une charge à une source électrique, comportant un transistor bipolaire à grille isolée.
JP3272298B2 (ja) * 1998-04-27 2002-04-08 インターナショナル・ビジネス・マシーンズ・コーポレーション 放電回路を備えたスイッチ回路および電子機器
US6675304B1 (en) * 1999-11-29 2004-01-06 Intel Corporation System for transitioning a processor from a higher to a lower activity state by switching in and out of an impedance on the voltage regulator
US6611410B1 (en) 1999-12-17 2003-08-26 Siemens Vdo Automotive Inc. Positive supply lead reverse polarity protection circuit
US6188212B1 (en) * 2000-04-28 2001-02-13 Burr-Brown Corporation Low dropout voltage regulator circuit including gate offset servo circuit powered by charge pump
TWI330353B (en) * 2006-06-30 2010-09-11 Chimei Innolux Corp Power supplying and discharging circuit for liquid crystal panel
TWI339481B (en) * 2007-01-29 2011-03-21 Chimei Innolux Corp Power supplying and discharging circuit
CN203166467U (zh) * 2013-03-20 2013-08-28 向智勇 一种过压保护电路

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3970869A (en) * 1975-03-03 1976-07-20 The United States Of America As Represented By The Secretary Of The Navy Low power driver
US4420786A (en) * 1981-11-16 1983-12-13 Motorola, Inc. Polarity guard circuit
DE3505986A1 (de) * 1985-02-21 1986-08-21 Deutsche Thomson-Brandt Gmbh, 7730 Villingen-Schwenningen Kurzschlussfestes netzteil, insbesondere fuer einen fernsehempfaenger
NL8601718A (nl) * 1986-07-02 1988-02-01 Philips Nv Transistorschakeling.

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102005011653A1 (de) * 2005-03-14 2006-09-28 Infineon Technologies Ag Schaltungsanordnung mit einem Transistor mit verringertem Rückstrom
DE102005011653B4 (de) * 2005-03-14 2007-12-06 Infineon Technologies Ag Schaltungsanordnung mit einem Transistor mit verringertem Rückstrom
US7362157B2 (en) 2005-03-14 2008-04-22 Infineon Technologies Ag Circuit arrangement with a transistor having a reduced reverse current

Also Published As

Publication number Publication date
DE3851839D1 (de) 1994-11-17
ATE112868T1 (de) 1994-10-15
EP0374288A1 (fr) 1990-06-27
US4945444A (en) 1990-07-31

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