[go: up one dir, main page]
More Web Proxy on the site http://driver.im/

EP0354750A2 - Appareil de visualisation d'image of procédé de fabrication dudit appareil - Google Patents

Appareil de visualisation d'image of procédé de fabrication dudit appareil Download PDF

Info

Publication number
EP0354750A2
EP0354750A2 EP89308020A EP89308020A EP0354750A2 EP 0354750 A2 EP0354750 A2 EP 0354750A2 EP 89308020 A EP89308020 A EP 89308020A EP 89308020 A EP89308020 A EP 89308020A EP 0354750 A2 EP0354750 A2 EP 0354750A2
Authority
EP
European Patent Office
Prior art keywords
electrodes
display apparatus
image display
opposed
control
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
EP89308020A
Other languages
German (de)
English (en)
Other versions
EP0354750B1 (fr
EP0354750A3 (en
Inventor
Masanori Watanabe
Michio Okajima
Kazuyuki Sakiyama
Kinzou Nonomura
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Publication of EP0354750A2 publication Critical patent/EP0354750A2/fr
Publication of EP0354750A3 publication Critical patent/EP0354750A3/en
Application granted granted Critical
Publication of EP0354750B1 publication Critical patent/EP0354750B1/fr
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Images

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J1/00—Details of electrodes, of magnetic control means, of screens, or of the mounting or spacing thereof, common to two or more basic types of discharge tubes or lamps
    • H01J1/02—Main electrodes
    • H01J1/30—Cold cathodes, e.g. field-emissive cathode
    • H01J1/304—Field-emissive cathodes
    • H01J1/3042—Field-emissive cathodes microengineered, e.g. Spindt-type
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J31/00—Cathode ray tubes; Electron beam tubes
    • H01J31/08—Cathode ray tubes; Electron beam tubes having a screen on or from which an image or pattern is formed, picked up, converted, or stored
    • H01J31/10—Image or pattern display tubes, i.e. having electrical input and optical output; Flying-spot tubes for scanning purposes
    • H01J31/12—Image or pattern display tubes, i.e. having electrical input and optical output; Flying-spot tubes for scanning purposes with luminescent screen
    • H01J31/123—Flat display tubes
    • H01J31/125—Flat display tubes provided with control means permitting the electron beam to reach selected parts of the screen, e.g. digital selection
    • H01J31/127—Flat display tubes provided with control means permitting the electron beam to reach selected parts of the screen, e.g. digital selection using large area or array sources, i.e. essentially a source for each pixel group

Definitions

  • the present invention relates to a thin image display apparatus using a plurality of cold cathodes.
  • a number of thin display apparatuses com­prising a plurality of cold cathodes arranged two-­dimensinally for displaying an image using X-Y matrix electrodes have been disclosed in the related art.
  • a thin image display apparatus using a cold cathode of electric field emission type is closely watched.
  • This thin diplay apparatus as shown in Fig. 5A, has a substrate with the surface thereof formed of a plurality of cold cathodes of thin film field emission type in a density as high as 106 to 107 units/cm2.
  • Fig. 5A has a substrate with the surface thereof formed of a plurality of cold cathodes of thin film field emission type in a density as high as 106 to 107 units/cm2.
  • these cathodes make up an X electrode 22 as one part of the matrix electrodes on the surface of a substrate 21, on which a Y electrode 24 is formed as the other part of the matrix electrodes together with an insulating layer 23.
  • a minute aperture 25 one ⁇ m to 1.5 ⁇ m in diameter is formed in the Y electrode at each inter-section of the X-Y electrodes, and the insulating layer 23 is etched.
  • a substrate assembly thus formed is rotated, while high a melting point metal such as tungsten or molybdenum is diagonally deposited by evapo­ration thereby to form a conical cold-cathode chip 26.
  • the unrequired metal layer in the surface is removed to produce a plurality of electron sources of cold cathodes of thin film field emission type.
  • These X-Y matrix electron sources are arranged in opposed relationship with a face plate 27 coated with a phosphor material 28 to configure an image display apparatus.
  • This image display apparatus which comprises as many as more than 1000 minute electron sources in each pixel, generally has a uniform characteristic in spite of possible variations in the characteristics of individual minute electron sources, thus producing a comparatively uniform brightness over the whole screen.
  • the object of the present invention is to provide a thin image display apparatus comprising an insulating substrate having two-dimensionally arranged electron source units controlled by X-Y matrix control electrodes and a face plate coated with a phosphor material arranged in opposed relationship with the insulating substrate wherein the said electron scorce units corresponding to each intersection of X-Y matrix control electrodes includes a cold cathode connected to an X-control electrode and a gate electrode connected to a Y-control electrode opposed to the cold cathode in the same plane, the electron source being formed in the part of the substrate surface on other than at least one of the X- and Y- control electrodes.
  • a high electric field of approximately 107 V/cm is formed at the forward end of the cold cathode and electrons are emitted. A part of the electrons thus emitted enters the anode directly. Another part of the electrons flow into the opposite gate electrode thereby to generate secondary electrons in the surface of the gate electrode.
  • the secondary electrons thus generated are accelerated by a positive voltage (hereinafter called the "anode voltage") applied to the phosphor face of the opposed face plate and bombarded on the phosphor material to emit light.
  • the apparatus according to the present invention in which a plurality of cold cathodes of planar field emission type are formed on the surface of an insulating substrate defined by X-control electrodes and Y-control electrodes, has the advantages (1) that the electric capacity between the electrodes is extreme­ly reduced (to 1/20 to 1/30 of the related art), (2) that the production cost is low since cold cathodes and gate electrodes are capable of being formed at the same time, and (3) that crosstalks are very small.
  • FIG. 1 A partial sectional view of an image display apparatus according to the present invention is shown in Fig. 1.
  • the image display apparatus comprises a glass substrate 1 having an electron source for electric field emission at each intersection of X-Y matrix electrodes, and a face plate 4 coated with phosphor material in opposed relationship with the glass substrate 1.
  • the glass substrate 1 has cold cathode 2 and gate electrodes 3 arranged face to face on the surface.
  • a positive voltage of, say, 100 V is applied to the gate electrodes 3 with respect to the cold cathodes 2
  • electron beams 7 are emitted.
  • a part of electrons thus emitted flows into the gate electrodes 3, while the other part is accelerated by a high voltage of, say, 500 V applied to an anode 5 and hits a phosphor surface thereby to cause the phosphor to emit light.
  • FIG. 2 An enlarged perspective view of an electron source is shown in Fig. 2.
  • a multiplicity of sawtoothed protrusions 8 are formed in the surface of the cold cathode 2 opposed to the gate electrode 3. Further, the surface of the glass substrate 1 has a recess 9 between the cold cathode 2 and the gate electrode 3 to facili­tate formation of a high electric field at the forward end of the cold cathode 2.
  • Fig. 3 shows a part of electrode arrangement.
  • X-control electrodes X1, X2, X3, ... X n and Y-control electrodes Y1, Y2, Y3, ... Y n make up matrix control electrodes.
  • a plurality of electron sources 13 are formed on the substrate surface defined by these control electrodes.
  • Each electron source 13, which is con­figured as shown in Fig. 2, includes a cold cathode 2 connected to an X-control electrode and a gate electrode 3 connected to a Y-control electrode.
  • This construction of the electron sources 15 not overlaid on the X- or Y-control electrodes is a reduction of 1/20 to 1/30 of the area required by the prior art for superposing the electrodes on each other through an insulating layer. As a result, the probability of short-circuiting between electrodes due to a pinhole in the insulating layer and the electric capacity are decreased to 1/20 to 1/30.
  • a film of such a metal as nickel is deposited by evaporation to the thickness of 0.5 ⁇ m over the whole surface of the glass substrate, and formed in stripes by photolithography. Electrodes are formed to the width of 0.1 mm.
  • An SiO2 film as thick as 1 ⁇ m is deposited as an insulating layer by the CVD process, and a part of the insulating film over an X-control electrode is removed to form a window for connecting to a cold cathode.
  • a tungsten film is deposited by evaporation to the thickness of 0.2 ⁇ m, so that a cold cathode 2, a gate electrode 3 and a Y-control electrode are formed simultaneously by photolithography.
  • the Y-control electrode is made as wide as 0.5 mm.
  • the protrusions of the cold cathod are set at an interval of 2 ⁇ m from the gate electrode. There are approximately 500 protrusions 8 per electron source unit (which correspond to one pixel). As the next process, the whole substrate is immersed in a buffer etching solution to form a recess 9 at the forward end of the cold cathode as shown in Fig. 2.
  • the electrode material for forming an X-­control electrode is not limited to nickel metal, but may preferably take the form of aluminum, titanium, gold-chromium alloy or other metal material which has a high adhesion with the glass substrate and low in resistivity. Also, a silver electrode or a gold elec­trode may be formed by the screen printing process or the like.
  • the SiO2 film used as an insulating layer may be replaced by another material of high insulation characteristic such as SiN, SiO or Al2O3. Instead of tungsten, on the other hand, tantalum, molybdenum or an alloy or carbide thereof having a high melting point may be used as a material of the cold cathode with equal effect.
  • a glass substrate having electron sources units 13 in the number of 480 x 660 arranged in matrix are disposed in opposed relations with a face plate coated with a ZnO:Zn phosphor material at inter­vals of 0.3 mm, and the surrounding parts are sealed with frit glass of a low melting point.
  • the resulting assembly is evacuated to produce an image display apparatus with a screen size of 10 inches.
  • the three primary colors of red, green and blue may be arranged in stripes to produce a color image.
  • An electrode configuration of a two-dimen­sional electron source is shown as a perspective view in Fig. 4.
  • Stripe electrodes 10 having a width of 0.1 mm and thickness of 3 ⁇ m are formed by the screen printing method on the surface of the glass substrate 1.
  • frit glass of low melting point is laid to the thick­ness of 1 ⁇ m by screen printing at intersections of the stripe electrodes 10 and Y-control electrodes to form an insulating layer 12.
  • Y-control electrodes 11 having a width of 0.05 mm and thickness of 1 ⁇ m are formed in stripes.
  • a cold cathode material WSi2 is formed by sputtering over the whole surface, and cold cathodes 2 and gate electrodes 3 are formed at the same time by photolithograhy.
  • the cold cathodes 2 and the gate electrodes 3 are engaged in comb, and the sides of these electrodes opposed to each other are arranged in parallel to the X-control electrodes (perpendicular to the longitudinal direction of the Y-control elec­trodes).
  • This arrangement causes emitted electron beams to widen somewhat along the longitudinal direction of the Y-control electrodes but not substantially along the perpendicular direction thereof.
  • electron beams are prevented from hitting the phosphor material corresponding to adjacent Y-control electrodes, so that what are called crosstalks rarely occur, thus producing a high-definition image display apparatus.
  • color mixing is effectively prevented in a color image display apparatus configured by three-color phosphor materials in stripes.
  • a glass substrate 1 making up a two-dimensional electron source and a face plate coated with a phosphor material are sealed with each other in opposed relations and evacuated in the same manner as in the first embodiment thereby to test produce an image display apparatus, which is capable of displaying a clear image substantially free of crosstalks like the first embodiment.

Landscapes

  • Cathode-Ray Tubes And Fluorescent Screens For Display (AREA)
EP19890308020 1988-08-08 1989-08-07 Appareil de visualisation d'image of procédé de fabrication dudit appareil Expired - Lifetime EP0354750B1 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP197411/88 1988-08-08
JP63197411A JP2623738B2 (ja) 1988-08-08 1988-08-08 画像表示装置

Publications (3)

Publication Number Publication Date
EP0354750A2 true EP0354750A2 (fr) 1990-02-14
EP0354750A3 EP0354750A3 (en) 1990-10-17
EP0354750B1 EP0354750B1 (fr) 1994-07-20

Family

ID=16374070

Family Applications (1)

Application Number Title Priority Date Filing Date
EP19890308020 Expired - Lifetime EP0354750B1 (fr) 1988-08-08 1989-08-07 Appareil de visualisation d'image of procédé de fabrication dudit appareil

Country Status (4)

Country Link
EP (1) EP0354750B1 (fr)
JP (1) JP2623738B2 (fr)
CA (1) CA1323901C (fr)
DE (1) DE68916875T2 (fr)

Cited By (27)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0388984A2 (fr) * 1989-03-23 1990-09-26 Canon Kabushiki Kaisha Générateur de faisceau d'électrons et dispositif d'affichage utilisant celui-ci
GB2242064A (en) * 1990-01-29 1991-09-18 Mitsubishi Electric Corp Microminiature vacuum tube and production thereof
FR2661028A1 (fr) * 1990-04-12 1991-10-18 Futaba Denshi Kogyo Kk Dispositif d'affichage.
FR2662301A1 (fr) * 1990-05-17 1991-11-22 Futaba Denshi Kogyo Kk Element emetteur d'electrons.
FR2667428A1 (fr) * 1990-09-27 1992-04-03 Futaba Denki Kogyo Kk Dispositif d'affichage d'image.
EP0500543A1 (fr) * 1989-09-29 1992-09-02 Motorola, Inc. Ecran plat utilisant des systemes d'emission par effet de champ
FR2673481A1 (fr) * 1991-02-28 1992-09-04 Motorola Inc Unite d'affichage du type a emission de champ, employant comme dispositif de commande un dispositif a emission de champ plan.
GB2259184A (en) * 1991-03-06 1993-03-03 Sony Corp Flat image-display apparatus
EP0535953A2 (fr) * 1991-10-02 1993-04-07 Sharp Kabushiki Kaisha Dispositif électronique du type à emission de champ
US5217401A (en) * 1989-07-07 1993-06-08 Matsushita Electric Industrial Co., Ltd. Method of manufacturing a field-emission type switching device
FR2689311A1 (fr) * 1992-03-27 1993-10-01 Futaba Denshi Kogyo Kk Cathode à émission de champ.
US5267884A (en) * 1990-01-29 1993-12-07 Mitsubishi Denki Kabushiki Kaisha Microminiature vacuum tube and production method
EP0605881A1 (fr) * 1992-12-29 1994-07-13 Canon Kabushiki Kaisha Source d'électrons, appareil de formation d'images et sa méthode de commande
EP0660367A1 (fr) * 1993-12-22 1995-06-28 Canon Kabushiki Kaisha Dispositif de formation d'image
EP0665571A1 (fr) * 1994-01-28 1995-08-02 Kabushiki Kaisha Toshiba Dispositif pour émettre d'électrons et méthode de fabrication
US5449983A (en) * 1993-04-20 1995-09-12 Kabushiki Kaisha Toshiba Color cathode ray tube apparatus
US5869842A (en) * 1995-12-20 1999-02-09 Electronics And Telecommunications Research Research Institute Mux and demux circuits using photo gate transistor
US6137218A (en) * 1994-05-20 2000-10-24 Canon Kabushiki Kaisha Image forming apparatus and a method for manufacturing the same
CN1068453C (zh) * 1992-12-29 2001-07-11 佳能株式会社 成象设备与制造成象设备的方法
CN1071488C (zh) * 1993-01-07 2001-09-19 佳能株式会社 电子束发生装置，成像装置及其驱动方法
CN1086057C (zh) * 1994-07-12 2002-06-05 佳能株式会社 用于制造电子源和成像设备的方法和设备
CN1086056C (zh) * 1995-03-13 2002-06-05 佳能株式会社 电子发射器件和电子源及其成象装置
US6593950B2 (en) 1991-10-08 2003-07-15 Canon Kabushiki Kaisha Electron-emitting device, and electron beam-generating apparatus and image-forming apparatus employing the device
US6992428B2 (en) 2001-12-25 2006-01-31 Canon Kabushiki Kaisha Electron emitting device, electron source and image display device and methods of manufacturing these devices
US7057336B2 (en) 1994-08-29 2006-06-06 Canon Kabushiki Kaisha Electron-emitting device, electron source and image-forming apparatus as well as method of manufacturing the same
EP2113934A2 (fr) 2008-05-02 2009-11-04 Canon Kabushiki Kaisha Source d'électron et appareil d'affichage d'image
US8093796B2 (en) 2009-05-11 2012-01-10 Canon Kabushiki Kaisha Electron beam apparatus and image display apparatus

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2553377Y2 (ja) * 1990-05-01 1997-11-05 双葉電子工業株式会社 蛍光表示装置
JP2601085B2 (ja) * 1990-11-28 1997-04-16 松下電器産業株式会社 機能性電子放出素子およびその製造方法
US5075595A (en) * 1991-01-24 1991-12-24 Motorola, Inc. Field emission device with vertically integrated active control
JP2601091B2 (ja) * 1991-02-22 1997-04-16 松下電器産業株式会社 電子放出素子

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0172089A1 (fr) * 1984-07-27 1986-02-19 Commissariat à l'Energie Atomique Dispositif de visualisation par cathodoluminescence excitée par émission de champ

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5150648A (fr) * 1974-10-30 1976-05-04 Hitachi Ltd
NO145589C (no) * 1977-06-30 1982-04-21 Rosenblad Corp Fremgangsmaate for kondensasjon av damp i en varmeveksler samt en varmeveksler til bruk ved fremgangsmaaten
DE3243596C2 (de) * 1982-11-25 1985-09-26 M.A.N. Maschinenfabrik Augsburg-Nürnberg AG, 8000 München Verfahren und Vorrichtung zur Übertragung von Bildern auf einen Bildschirm
JPS62261153A (ja) * 1986-05-08 1987-11-13 Nec Corp 半導体装置の製造方法
JP2654012B2 (ja) * 1987-05-06 1997-09-17 キヤノン株式会社 電子放出素子およびその製造方法

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0172089A1 (fr) * 1984-07-27 1986-02-19 Commissariat à l'Energie Atomique Dispositif de visualisation par cathodoluminescence excitée par émission de champ

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
DISPLAYS (C.A.E TECHNICAL NOTE) January 1987, GRENOBLE, FR.pages 37-40; G.LABRUNIE et al.. "NOVEL TYPE OF EMISSIVE FLAT PANEL DISPLAY:THE MATRIXED COLD-CATHODE MICROTIP FLUORESCENT DISPLAY". *

Cited By (46)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5185554A (en) * 1989-03-23 1993-02-09 Canon Kabushiki Kaisha Electron-beam generator and image display apparatus making use of it
US5757123A (en) * 1989-03-23 1998-05-26 Canon Kabushiki Kaisha Electron-beam generator and image display apparatus making use of it
EP0388984A2 (fr) * 1989-03-23 1990-09-26 Canon Kabushiki Kaisha Générateur de faisceau d'électrons et dispositif d'affichage utilisant celui-ci
EP0388984A3 (fr) * 1989-03-23 1992-01-02 Canon Kabushiki Kaisha Générateur de faisceau d'électrons et dispositif d'affichage utilisant celui-ci
US5217401A (en) * 1989-07-07 1993-06-08 Matsushita Electric Industrial Co., Ltd. Method of manufacturing a field-emission type switching device
EP0500543A1 (fr) * 1989-09-29 1992-09-02 Motorola, Inc. Ecran plat utilisant des systemes d'emission par effet de champ
EP0500543A4 (en) * 1989-09-29 1992-11-19 Motorola, Inc. Flat panel display using field emission devices
US5267884A (en) * 1990-01-29 1993-12-07 Mitsubishi Denki Kabushiki Kaisha Microminiature vacuum tube and production method
GB2242064A (en) * 1990-01-29 1991-09-18 Mitsubishi Electric Corp Microminiature vacuum tube and production thereof
US5245247A (en) * 1990-01-29 1993-09-14 Mitsubishi Denki Kabushiki Kaisha Microminiature vacuum tube
GB2242064B (en) * 1990-01-29 1994-05-25 Mitsubishi Electric Corp Microminiature vacuum tube and production method
FR2661028A1 (fr) * 1990-04-12 1991-10-18 Futaba Denshi Kogyo Kk Dispositif d'affichage.
FR2662301A1 (fr) * 1990-05-17 1991-11-22 Futaba Denshi Kogyo Kk Element emetteur d'electrons.
FR2667428A1 (fr) * 1990-09-27 1992-04-03 Futaba Denki Kogyo Kk Dispositif d'affichage d'image.
DE4132151C2 (de) * 1990-09-27 1998-02-19 Futaba Denshi Kogyo Kk Bildanzeigegerät
DE4132151A1 (de) * 1990-09-27 1992-04-16 Futaba Denshi Kogyo Kk Bildanzeigegeraet
FR2673481A1 (fr) * 1991-02-28 1992-09-04 Motorola Inc Unite d'affichage du type a emission de champ, employant comme dispositif de commande un dispositif a emission de champ plan.
GB2259184B (en) * 1991-03-06 1995-01-18 Sony Corp Flat image-display apparatus
GB2259184A (en) * 1991-03-06 1993-03-03 Sony Corp Flat image-display apparatus
US5382867A (en) * 1991-10-02 1995-01-17 Sharp Kabushiki Kaisha Field-emission type electronic device
EP0535953A3 (fr) * 1991-10-02 1993-06-02 Sharp Kabushiki Kaisha Dispositif électronique du type à emission de champ
EP0535953A2 (fr) * 1991-10-02 1993-04-07 Sharp Kabushiki Kaisha Dispositif électronique du type à emission de champ
US6593950B2 (en) 1991-10-08 2003-07-15 Canon Kabushiki Kaisha Electron-emitting device, and electron beam-generating apparatus and image-forming apparatus employing the device
FR2689311A1 (fr) * 1992-03-27 1993-10-01 Futaba Denshi Kogyo Kk Cathode à émission de champ.
EP0605881A1 (fr) * 1992-12-29 1994-07-13 Canon Kabushiki Kaisha Source d'électrons, appareil de formation d'images et sa méthode de commande
CN1086053C (zh) * 1992-12-29 2002-06-05 佳能株式会社 电子源和图像形成装置
EP1209719A1 (fr) * 1992-12-29 2002-05-29 Canon Kabushiki Kaisha Source d'électrons et dispositif de formation d'image muni d'une telle source et procédé de commande d'un dispositif de formation d'image
CN1068453C (zh) * 1992-12-29 2001-07-11 佳能株式会社 成象设备与制造成象设备的方法
CN1071488C (zh) * 1993-01-07 2001-09-19 佳能株式会社 电子束发生装置，成像装置及其驱动方法
US5449983A (en) * 1993-04-20 1995-09-12 Kabushiki Kaisha Toshiba Color cathode ray tube apparatus
EP0660367A1 (fr) * 1993-12-22 1995-06-28 Canon Kabushiki Kaisha Dispositif de formation d'image
US6121942A (en) * 1993-12-22 2000-09-19 Canon Kabushiki Kaisha Image-forming apparatus with correction in accordance with positional deviations between electron-emitting devices and image-forming members
AU677877B2 (en) * 1993-12-22 1997-05-08 Canon Kabushiki Kaisha Image-forming apparatus
EP0665571A1 (fr) * 1994-01-28 1995-08-02 Kabushiki Kaisha Toshiba Dispositif pour émettre d'électrons et méthode de fabrication
US6137218A (en) * 1994-05-20 2000-10-24 Canon Kabushiki Kaisha Image forming apparatus and a method for manufacturing the same
US6283813B1 (en) 1994-05-20 2001-09-04 Canon Kabushiki Kaisha Image forming apparatus and a method for manufacturing the same
CN1086057C (zh) * 1994-07-12 2002-06-05 佳能株式会社 用于制造电子源和成像设备的方法和设备
US7234985B2 (en) 1994-08-29 2007-06-26 Canon Kabushiki Kaisha Method for manufacturing an electric emitting device with first and second carbon films
US7057336B2 (en) 1994-08-29 2006-06-06 Canon Kabushiki Kaisha Electron-emitting device, electron source and image-forming apparatus as well as method of manufacturing the same
US7758762B2 (en) 1994-08-29 2010-07-20 Canon Kabushiki Kaisha Method for manufacturing an electron-emitting device with first and second carbon films
CN1086056C (zh) * 1995-03-13 2002-06-05 佳能株式会社 电子发射器件和电子源及其成象装置
US5869842A (en) * 1995-12-20 1999-02-09 Electronics And Telecommunications Research Research Institute Mux and demux circuits using photo gate transistor
US6992428B2 (en) 2001-12-25 2006-01-31 Canon Kabushiki Kaisha Electron emitting device, electron source and image display device and methods of manufacturing these devices
EP2113934A2 (fr) 2008-05-02 2009-11-04 Canon Kabushiki Kaisha Source d'électron et appareil d'affichage d'image
US7982381B2 (en) 2008-05-02 2011-07-19 Canon Kabushiki Kaisha Electron source and image display apparatus
US8093796B2 (en) 2009-05-11 2012-01-10 Canon Kabushiki Kaisha Electron beam apparatus and image display apparatus

Also Published As

Publication number Publication date
EP0354750B1 (fr) 1994-07-20
CA1323901C (fr) 1993-11-02
JP2623738B2 (ja) 1997-06-25
EP0354750A3 (en) 1990-10-17
JPH0246636A (ja) 1990-02-16
DE68916875T2 (de) 1995-01-12
DE68916875D1 (de) 1994-08-25

Similar Documents

Publication Publication Date Title
EP0354750A2 (fr) Appareil de visualisation d'image of procédé de fabrication dudit appareil
US5225820A (en) Microtip trichromatic fluorescent screen
US5508584A (en) Flat panel display with focus mesh
EP0635865B1 (fr) Dispositif de visualisation à effet de champ
EP0404022B1 (fr) Dispositif d'affichage plan et procédé de fabrication de ce dispositif
US6975075B2 (en) Field emission display
JP2728739B2 (ja) マイクロドット三原色蛍光スクリーンとその製造方法及びそのアドレス方法
USRE41828E1 (en) Image display and a manufacturing method of the same
JPH08227652A (ja) 電子放出装置およびその製造方法
US5723052A (en) Soft luminescence of field emission display
JPH08115654A (ja) 粒子放出装置、電界放出型装置及びこれらの製造方法
US5880554A (en) Soft luminescence of field emission display
US6445125B1 (en) Flat panel display having field emission cathode and manufacturing method thereof
US5504387A (en) Flat display where a first film electrode, a dielectric film, and a second film electrode are successively formed on a base plate and electrons are directly emitted from the first film electrode
JPH08264109A (ja) 粒子放出装置、電界放出型装置及びこれらの製造方法
JP3409468B2 (ja) 粒子放出装置、電界放出型装置及びこれらの製造方法
JPH0896704A (ja) 粒子放出装置、電界放出型装置及びこれらの製造方法
US7259511B2 (en) Flat panel display device with surfaces of cathodes and control electrodes lying in the same flat plane
US5764204A (en) Two-gate flat display screen
EP1833073B1 (fr) Dispositif d'affichage d'image
US7405711B2 (en) Fixed-pixel display device and cold cathode field electron emission display device
US6121725A (en) Flat display screen with focusing grids
US7132784B2 (en) Fluorescent display tube having provision for preventing short-circuit therein, and method of manufacturing the same
JP2002367542A (ja) 電界放出型ディスプレイとその製造方法
JP2632152B2 (ja) カラーグラフイツク蛍光表示管

Legal Events

Date Code Title Description
PUAI Public reference made under article 153(3) epc to a published international application that has entered the european phase

Free format text: ORIGINAL CODE: 0009012

AK Designated contracting states

Kind code of ref document: A2

Designated state(s): DE FR GB NL

PUAL Search report despatched

Free format text: ORIGINAL CODE: 0009013

AK Designated contracting states

Kind code of ref document: A3

Designated state(s): DE FR GB NL

17P Request for examination filed

Effective date: 19901205

17Q First examination report despatched

Effective date: 19930303

GRAA (expected) grant

Free format text: ORIGINAL CODE: 0009210

AK Designated contracting states

Kind code of ref document: B1

Designated state(s): DE FR GB NL

REF Corresponds to:

Ref document number: 68916875

Country of ref document: DE

Date of ref document: 19940825

ET Fr: translation filed
PLBE No opposition filed within time limit

Free format text: ORIGINAL CODE: 0009261

STAA Information on the status of an ep patent application or granted ep patent

Free format text: STATUS: NO OPPOSITION FILED WITHIN TIME LIMIT

26N No opposition filed
REG Reference to a national code

Ref country code: GB

Ref legal event code: IF02

PGFP Annual fee paid to national office [announced via postgrant information from national office to epo]

Ref country code: GB

Payment date: 20030806

Year of fee payment: 15

PGFP Annual fee paid to national office [announced via postgrant information from national office to epo]

Ref country code: FR

Payment date: 20030808

Year of fee payment: 15

PGFP Annual fee paid to national office [announced via postgrant information from national office to epo]

Ref country code: DE

Payment date: 20030814

Year of fee payment: 15

PGFP Annual fee paid to national office [announced via postgrant information from national office to epo]

Ref country code: NL

Payment date: 20030831

Year of fee payment: 15

REG Reference to a national code

Ref country code: GB

Ref legal event code: 746

Effective date: 20031002

REG Reference to a national code

Ref country code: FR

Ref legal event code: D6

PG25 Lapsed in a contracting state [announced via postgrant information from national office to epo]

Ref country code: GB

Free format text: LAPSE BECAUSE OF NON-PAYMENT OF DUE FEES

Effective date: 20040807

PG25 Lapsed in a contracting state [announced via postgrant information from national office to epo]

Ref country code: NL

Free format text: LAPSE BECAUSE OF NON-PAYMENT OF DUE FEES

Effective date: 20050301

Ref country code: DE

Free format text: LAPSE BECAUSE OF NON-PAYMENT OF DUE FEES

Effective date: 20050301

GBPC Gb: european patent ceased through non-payment of renewal fee

Effective date: 20040807

PG25 Lapsed in a contracting state [announced via postgrant information from national office to epo]

Ref country code: FR

Free format text: LAPSE BECAUSE OF NON-PAYMENT OF DUE FEES

Effective date: 20050429

NLV4 Nl: lapsed or anulled due to non-payment of the annual fee

Effective date: 20050301

REG Reference to a national code

Ref country code: FR

Ref legal event code: ST