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EP0191479B1 - Herstellungsverfahren eines hochfrequenten Quarzresonators - Google Patents

Herstellungsverfahren eines hochfrequenten Quarzresonators Download PDF

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Publication number
EP0191479B1
EP0191479B1 EP86101786A EP86101786A EP0191479B1 EP 0191479 B1 EP0191479 B1 EP 0191479B1 EP 86101786 A EP86101786 A EP 86101786A EP 86101786 A EP86101786 A EP 86101786A EP 0191479 B1 EP0191479 B1 EP 0191479B1
Authority
EP
European Patent Office
Prior art keywords
thickness
substrate
resonator
central portion
process according
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
EP86101786A
Other languages
English (en)
French (fr)
Other versions
EP0191479A1 (de
Inventor
Bruno Studer
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
ETA SA Manufacture Horlogere Suisse
Original Assignee
Eta SA Fabriques dEbauches
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Eta SA Fabriques dEbauches filed Critical Eta SA Fabriques dEbauches
Publication of EP0191479A1 publication Critical patent/EP0191479A1/de
Application granted granted Critical
Publication of EP0191479B1 publication Critical patent/EP0191479B1/de
Expired legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic elements; Electromechanical resonators
    • H03H9/02—Details
    • H03H9/05—Holders or supports
    • H03H9/0595—Holders or supports the holder support and resonator being formed in one body
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H3/00—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
    • H03H3/007—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
    • H03H3/02—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks
    • H03H3/04—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks for obtaining desired frequency or temperature coefficient
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T29/00—Metal working
    • Y10T29/42—Piezoelectric device making

Definitions

  • the present invention relates to a method for manufacturing quartz resonators working in a relatively high frequency range which can typically range from 20 to 100 MHz. More particularly, the invention relates to quartz resonators operating in the shear thickness mode.
  • US-A-4135108 describes a quartz resonator of the type in which the quartz is mounted as a dielectric between the plates of a capacitor, these plates being provided on plates which hold the resonator in place.
  • the latter may include a peripheral ring wedged between the plates and separated from the resonator element proper by thinned zones which may take the form of simple radial connection tabs between the peripheral ring and the resonator element.
  • the ring, the thinned legs and the resonator element are in one piece and the shape of the assembly is obtained by machining such as abrasion, chemical attack or the like. In some cases, this assembly may have a uniform overall thickness, with the exception of the connection tabs, the main surfaces being parallel.
  • the frequency adjustment of the resonant element can be obtained by removing material, but such a precise machining operation then involves the entire surface or main surfaces of the assembly composed of the ring, the legs and of the resonant central part, so that it causes a general mechanical weakening of this assembly including the outer ring. It therefore loses its role of mechanical reinforcement and ultimately only serves as a fixing member.
  • a resonator comprising an active central part bordered by a reinforcing frame to which it is mechanically connected by a connection member surrounding all of said active part.
  • the resonator is such that the thickness of the reinforcing frame is greater than the thickness of the active part, itself greater than the thickness of the connection member.
  • the object of the invention is to provide a method for manufacturing a quartz resonator and the resulting product, which make it possible to combine the mechanical rigidity of the resonator at a frequency as high as 100 MHz.
  • each resonator comprising an active central element surrounded by a reinforcement frame from which it is separated by at least a thinner connection member
  • this process consisting in subjecting a quartz substrate with parallel faces to selective chemical etching and photolithography operations, this process being characterized in that it consists in reducing the thickness of the substrate in the marginal zone corresponding to the connection member of each resonator, while retaining those corresponding to said central element and to said reinforcing frame and then to further reduce the thickness of said marginal zone simultaneously with a reduction in thickness of the central part, this second thickness reduction also does not affect the thickness of said reinforcing frame.
  • the invention also relates to a resonator obtained by the method as defined above.
  • This resonator has the advantage of combining a high fundamental frequency with mechanical resistance and very satisfactory vibration decoupling.
  • a quartz plate (Wafer) is first prepared according to the conventional technique.
  • This plate is preferably AT cut to allow the establishment of a thickness shearing mode in the resonators that it is proposed to manufacture there.
  • This wafer or substrate 1 is then coated on its two faces with metallizations which may consist of two superimposed metallic layers, respectively a chromium layer 2 of approximately 200 A thick and in a gold layer 3 of approximately 2000 ⁇ .
  • FIG. 2A shows the outline of a single resonator 5 which can be seen provided with connection lugs 6 intended to connect the resonator to a connection strip 7.
  • the next step in the process consists in placing a mask on both sides of the substrate making it possible to expose only light in the form of a frame 8 (FIG. 3B) in each part of the substrate corresponding to a resonator. It is exposed to light and the photo-resist is developed so as to form a groove 9 (FIG. 3A) in the photo-resist.
  • the chemical attack is then carried out on the substrate itself to separate the resonators from one another while retaining the connection strip 7 and the connection tabs 6 shown in FIGS. 2B and 3B.
  • the substrate then has the configuration shown in FIG. 5.
  • the next step consists in carrying out a selective chemical attack on the metallization portions located below the grooves 9 of the photo-resist followed by an attack on the quartz allowing a groove 11 to be plumbed in the substrate itself. grooves 9 of the photo-resist.
  • the substrate then presents the configuration of FIG. 6.
  • the next stage consists in developing the already exposed photo-resist of the central part 10 followed by a selective attack on the underlying metal layers to expose the quartz in the central part.
  • FIG. 7 shows the configuration which is obtained after the operations which have just been described.
  • the substrate 1 comprises a central part 1A intended to become the resonator proper, a mechanical connection part 1 B which will ensure the decoupling of the vibrations of the central part, and a reinforcement frame 1 C surrounding the assembly. For the moment part 1 C is still covered with metallizations and photo-resist.
  • the last stage of the process consists in providing two electrodes 12 and 13 by metallization in accordance with Figures and 9A and 9B.
  • connection tabs connecting the reinforcement frame to the active part.
  • these connection tabs bear the reference 15 and are two in number while in FIG. 11 the tabs are indicated by the reference 16 and are four in number.
  • connection tabs in the manner of the embodiments of Figures 10 and 11.

Landscapes

  • Physics & Mathematics (AREA)
  • Acoustics & Sound (AREA)
  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Piezo-Electric Or Mechanical Vibrators, Or Delay Or Filter Circuits (AREA)

Claims (8)

1. Verfahren zum Herstellen von Quarzresonatoren, insbesondere mit AT-Schnitt und Dickenscherschwingungsmodus, wobei jeder Resonator eine zentrale aktive Partie (1 A) umfasst, umgeben von einem Verstärkungsrahmen (1 C), von dem es durch mindestens ein Verbindungsorgan (1 B) verringerter Dicke getrennt ist, welches Verfahren darin besteht, ein Quarzsubstrat (1 ) mit parallelen Seiten selektiven Arbeitsgängen der Chemogravur und Photolithographie auszusetzen, wobei dieses Verfahren dadurch gekennzeichnet ist, dass es in einer Dickenverringerung des Substrats (1) in der dem Verbindungsorgan (1 B) entsprechenden marginalen Zone (8) jedes Resonators besteht unter Konservierung jener, die der zentralen Partie (1A) und dem Verstärkungsrahmen (1 B) entsprechen, aus nachfolgendem weiterem Verringern der Dicke der marginalen Zone (11) simultan mit einer Dickenverringerung der zentralen Partie, wobei auch diese zweite Dickenverringerung nicht die Dicke des Verstärkungsrahmens (1 C) beeinflusst.
2. Verfahren nach Anspruch 1, dadurch gekennzeichnet, dass es, vor der ersten Dickenverringerung, aus einer Beschichtung des Substrats (1) mit einer Photoresist-Schicht (4), dem Öffnen einer Rille (9) in dieser Schicht über der marginalen Zone und dem Abtrag der unterliegenden Zone des Substrats bis zum Erreichen der ersten Dicke besteht.
3. Verfahren nach Anspruch 2, dadurch gekennzeichnet, dass der zweite Arbeitsgang der Dickenverringerung darin besteht, die Photoresist-Schicht über der zentralen Partie (1 A) des Substrats zu entfernen und die freigelegten Partien (1A, 1 B) abzutragen bis zum Erreichen der Dicke (ti) dieser zentralen Partie (1 A) entsprechend der zu erzielenden Frequenz.
4. Verfahren nach einem der Ansprüche 1 bis 3, dadurch gekennzeichnet, dass der ersten Dickenverringerung ein Arbeitsgang des Zertrennens durch chemischen Abtrag des Substrats vorausgeht, um die Resonatoren in jenem zu begrenzen.
5. Verfahren nach Ansprüchen 2 und 4 in Kombination, dadurch gekennzeichnet, dass der Zertrennarbeitsgang mit Hilfe der genannten Photo- resist-Schicht ausgeführt wird.
6. Verfahren nach Anspruch 5, dadurch gekennzeichnet, dass der Zertrennarbeitsgang gleichermassen darin besteht, mindestens einen Spalt (14) in das Substrat am Ort der marginalen Zone (1 B) einzubringen mit Ausnahme des oder der Verbindungsorgans/organe (1 B, 15, 16).
7. Verfahren nach Anspruch 6, dadurch gekennzeichnet, dass es darin besteht, die Photoresist-Schicht (4) in der Zone entsprechend der zentralen Partie (1A) vor dem Zertrennarbeitsgang zu belichten und die entsprechende Zone (10) der Photoresist-Schicht (4) nach dem Zertrennarbeitsgang, jedoch vor dem ersten Dickenverringerungsarbeitsgang zu entwickeln.
8. Resonator, erhalten durch ein Verfahren nach einem der vorangehenden Ansprüche, umfassend eine zentrale aktive Partie (1 A) der Dicke tj, umgeben von einem Verstärkungsrahmen der Dicke t3, mit dem sie mechanisch durch eine Gruppe von Verbindungen der Dicke t2 verbunden ist, mit t3 > t> > t2, dadurch gekennzeichnet, dass die Gruppe von Verbindungen in Form einer Mehrzahl von Laschen (15, 16) vorliegt, wobei der Rest der marginalen Zone von einem Spalt (14) eingenommen wird, der das Substrat von einer Seite zur andern durchsetzt.
EP86101786A 1985-02-13 1986-02-13 Herstellungsverfahren eines hochfrequenten Quarzresonators Expired EP0191479B1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
FR8502156A FR2577362B1 (fr) 1985-02-13 1985-02-13 Procede de fabrication de resonateurs a quartz a haute frequence
FR8502156 1985-02-13

Publications (2)

Publication Number Publication Date
EP0191479A1 EP0191479A1 (de) 1986-08-20
EP0191479B1 true EP0191479B1 (de) 1989-11-08

Family

ID=9316297

Family Applications (1)

Application Number Title Priority Date Filing Date
EP86101786A Expired EP0191479B1 (de) 1985-02-13 1986-02-13 Herstellungsverfahren eines hochfrequenten Quarzresonators

Country Status (7)

Country Link
US (1) US4701987A (de)
EP (1) EP0191479B1 (de)
JP (1) JPH07120919B2 (de)
DE (1) DE3666906D1 (de)
FR (1) FR2577362B1 (de)
HK (1) HK22293A (de)
SG (1) SG104992G (de)

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3606851A1 (de) * 1986-03-03 1987-09-10 Vdo Schindling Anordnung zur messung der stroemungsgeschwindigkeit
JPH0831769B2 (ja) * 1989-01-13 1996-03-27 セイコー電子工業株式会社 厚電振動子
US5187458A (en) * 1989-09-21 1993-02-16 Nihon Musen Kabushiki Kaisha Composite longitudinal vibration mechanical filter having central frequency deviation elimination means and method of manufacturing same
US5376221A (en) * 1992-11-06 1994-12-27 Staudte; Juergen H. Process for mass producing high frequency crystal resonators
JP2000252786A (ja) 1999-03-01 2000-09-14 Matsushita Electric Ind Co Ltd 圧電振動素子
DE10084495T1 (de) * 1999-04-20 2002-06-06 Seagate Technology Llc Elektrodenstrukturierung für einen Differential-PZT-Aktuator
JP2006238263A (ja) * 2005-02-28 2006-09-07 Seiko Epson Corp 圧電振動片、及び圧電振動子
JP2006238266A (ja) * 2005-02-28 2006-09-07 Seiko Epson Corp 圧電振動片、及び圧電振動子
JP4305542B2 (ja) * 2006-08-09 2009-07-29 エプソントヨコム株式会社 Ａｔカット水晶振動片及びその製造方法
US8069554B2 (en) * 2007-04-12 2011-12-06 Seagate Technology Assembly and method for installing a disc clamp
JP5272651B2 (ja) * 2008-10-29 2013-08-28 セイコーエプソン株式会社 振動片の製造方法
JP5239784B2 (ja) * 2008-11-28 2013-07-17 株式会社大真空 圧電振動デバイス
JP6797764B2 (ja) * 2017-08-09 2020-12-09 日本電波工業株式会社 水晶振動子およびその製造方法

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3432205A (en) * 1966-12-08 1969-03-11 Shell Oil Co Sulfur steam drive
US3694677A (en) * 1971-03-03 1972-09-26 Us Army Vhf-uhf piezoelectric resonators
JPS5229908B2 (de) * 1971-11-17 1977-08-04
US3930857A (en) * 1973-05-03 1976-01-06 International Business Machines Corporation Resist process
CH581906A5 (de) * 1974-05-06 1976-11-15 Suisse Horlogerie
FR2338607A1 (fr) * 1976-01-16 1977-08-12 France Etat Resonateur a quartz a electrodes non adherentes au cristal
JPS5492087A (en) * 1977-12-29 1979-07-20 Matsushima Kogyo Co Ltd Manufacture of thin-cauge crystal oscillator
JPS55127717A (en) * 1979-03-27 1980-10-02 Tohoku Metal Ind Ltd Production of piezoelectric vibrator with partial electrode added
JPS5941914A (ja) * 1982-09-01 1984-03-08 Seiko Instr & Electronics Ltd Ｇｔカツト水晶振動子
JPS59128814A (ja) * 1983-01-13 1984-07-25 Nippon Dempa Kogyo Co Ltd 圧電振動子
FR2554289B1 (fr) * 1983-10-28 1985-12-27 Cepe Procede et dispositif d'usinage d'une lame de resonateur et lame ainsi obtenue
JPS613514A (ja) * 1984-06-18 1986-01-09 Nippon Dempa Kogyo Co Ltd 圧電振動子

Also Published As

Publication number Publication date
JPH07120919B2 (ja) 1995-12-20
US4701987A (en) 1987-10-27
FR2577362A1 (fr) 1986-08-14
EP0191479A1 (de) 1986-08-20
SG104992G (en) 1992-12-24
HK22293A (en) 1993-03-19
DE3666906D1 (en) 1989-12-14
FR2577362B1 (fr) 1987-04-17
JPS61189715A (ja) 1986-08-23

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