[go: up one dir, main page]
More Web Proxy on the site http://driver.im/

EP0179212A2 - Chemical copper plating solution - Google Patents

Chemical copper plating solution Download PDF

Info

Publication number
EP0179212A2
EP0179212A2 EP85109921A EP85109921A EP0179212A2 EP 0179212 A2 EP0179212 A2 EP 0179212A2 EP 85109921 A EP85109921 A EP 85109921A EP 85109921 A EP85109921 A EP 85109921A EP 0179212 A2 EP0179212 A2 EP 0179212A2
Authority
EP
European Patent Office
Prior art keywords
plating solution
copper plating
chemical copper
compound
group
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
EP85109921A
Other languages
German (de)
French (fr)
Other versions
EP0179212A3 (en
EP0179212B1 (en
Inventor
Akira Endo
Kazuhiro Takeda
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP20044584A external-priority patent/JPS6179775A/en
Priority claimed from JP27330384A external-priority patent/JPS61153281A/en
Application filed by Toshiba Corp filed Critical Toshiba Corp
Publication of EP0179212A2 publication Critical patent/EP0179212A2/en
Publication of EP0179212A3 publication Critical patent/EP0179212A3/en
Application granted granted Critical
Publication of EP0179212B1 publication Critical patent/EP0179212B1/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C18/00Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
    • C23C18/16Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
    • C23C18/31Coating with metals
    • C23C18/38Coating with copper
    • C23C18/40Coating with copper using reducing agents

Definitions

  • This invention relates to a chemical copper plating solution. More particularly, it is concerned with a chemical copper plating solution having a novel composition which makes it possible to deposit copper at a high speed and is stable over a prolonged period of application and can form a plated film having favourable mechanical properties.
  • a chemical copper plating solution may usually contain as essential components a water-soluble copper salt such as copper sulfate, cupric chloride, etc.; a complexing agent such as ethylenediaminetetraacetic acid (EDTA), N,N,N',N'-tetrakis-(2-hydroxypropyl)ethylenediamine, Rochelle salt, etc.; a reducing agent such as formaldehyde, dimethylaminoborane, sodium borohydride, etc.; a pH adjustor such as sodium hydroxide, potassium hydroxide, etc.; and, where necessary, a surface active agent such as a polyethylene oxide, a polyether, a polyester, etc.
  • a water-soluble copper salt such as copper sulfate, cupric chloride, etc.
  • a complexing agent such as ethylenediaminetetraacetic acid (EDTA), N,N,N',N'-tetrakis-(2-hydroxypropyl)ethylenediamine, Rochelle
  • a chemical copper plating solution having the composition of such components generally tends to lack stability and readily undergo self-decomposition; moreover, a plated film or deposited film made from said chemical plating solution is brittle and insufficient in mechanical strength, particularly bending strength for practical utility.
  • the primary object of this invention is to provide a chemical copper plating solution having a novel composition which can dissolve the aforesaid problems, show a good stability, without reducing high speed deposit in plating, and provide good mechanical properties, especially a favourable spreadability of the resultant plated film.
  • the chemical copper plating solution of this invention is a chemical copper plating solution containing a copper salt, a complexing agent, a reducing agent and a pH adjustor, which further comprises at least one of the under-mentioned Groups (A) and (B):
  • the chemical copper plating solution according to this invention is composed of, in addition to the four components of a copper salt, a complexing agnet, a reducing agent and a pH adjustor, at least one selected from the group consisting of, as Group (A), a nonionic surface active agent mentioned below and at least one selected from the group consisting of 1,10-phenanthroline, a 1,10-phenanthroline derivative, 2,2'-dipyridyl, 2,2'-biquinoline and a water-soluble cyan compound; and as Group (B), an organic sulfur compound and an ethyleneamine compound.
  • A a nonionic surface active agent mentioned below
  • 1,10-phenanthroline 1,10-phenanthroline derivative, 2,2'-dipyridyl, 2,2'-biquinoline and a water-soluble cyan compound
  • B an organic sulfur compound and an ethyleneamine compound.
  • a copper salt may supply a copper ion, while a reducing agent may reduce said copper ion to a metallic state.
  • a complexing agent may form a stable complex with copper ions to prevent, in a plating bath (alkaline), a formation of cupric hydroxide, while a pH adjustor may adjust the optimum plating deposit potential in a plating bath.
  • the nonionic surface active agent may contribute to mechanical properties and deposit rate of a plating solution and is represented by the formula (I) or (II).
  • each of m l , m 2 , n 1 and n 2 is an integer of 1 or more. If any of them is 0 (zero), a nonionic surface active agent shows a low solubility so that a sufficient amount thereof to contribute to improvement in stability or mechanical properties of a plating solution could not be dissolved in a plating solution.
  • m l + n 1 or m 2 + n 2 is increased, stability and mechanical properties of a plating solution may be correspondingly improved. In any case, its effect may approximately reach the upper limit at the neighborhood of 20 to a saturated state. Thus, there is particularly no upper limit with regard to m l + n 1 or m 2 + n 2 , but not more than 500 is preferred in view of workability.
  • a concentration of the compound (I) or (II) in a plating solution is preferably in the range of 10 mg/l to 30 g/1.
  • a concentration of the compound (I) or (II) in a plating solution is preferably in the range of 10 mg/l to 30 g/1.
  • m 1 + n 1 and m 2 + n 2 is less than 20, a range of 30 mg/l to 20 g/1 is preferred.
  • m 1 + n 1 and m 2 + n 2 is not less than 20, a range of 10 mg/l to 5 g/1 is preferred.
  • 1,10-phenanthroline a 1,10-phenanthroline derivative, 2,2'-dipyridyl, 2,2'-biquinoline or a water-soluble cyan compound, in order that the aforesaid effects by nonionic surface active ageant, especially stability of a plating solution or mechanical properties of a plated film may be far more enhanced.
  • the 1,10-phenanthroline derivative may preferably have a substituent such as a lower alkyl group, e.g., a methyl group, an ethyl group, etc. or a phenyl group and there may illustratively be mentioned 2,9-dimethyl-1,10-phenanthroline, 4,7-diphenyl-2,9-dimethyl-1,10-phenanthroline, 4,7-diphenyl-1,10-phenanthroline and so on.
  • a substituent such as a lower alkyl group, e.g., a methyl group, an ethyl group, etc. or a phenyl group and there may illustratively be mentioned 2,9-dimethyl-1,10-phenanthroline, 4,7-diphenyl-2,9-dimethyl-1,10-phenanthroline, 4,7-diphenyl-1,10-phenanthroline and so on.
  • water-soluble cyan compound there may be mentioned, for instance, potassium cyanide, sodium cyanide, sodium nitroprusside, potassium ferrocyanide, potassium ferricyanide, potassium tetracyanoniccolate and so on.
  • a total amount of 1,10-phenanthroline, a 1,10-phenanthroline derivative, 2,2'-dipyridyl and 2,2'-biquinoline to be added is preferably 1 - 200 mg/l, a range of 2 - 50 mg/l being particularly preferred. If the added amount is less than 1 mg/1, one could not obtain effects at all;
  • An amount of the water-soluble cyan compound to be added is preferably 1 mg/1 to 3 g/l, a range of 5 mg/l to 1 g/1 being particularly preferred. If the added amount is less than 1 mg/l, it does not at all contribute to improvement in stability and mechanical properties, while, if more than 3 g/l, there would undesirably produce a lowered deposit rate or a reduced mechanical property of a plated film.
  • the organic sulfur compound added as the Group (B) may contribute to improved stability of a plating solution, while the ethyleneamine compound may contribute to speed-up of a deposit rate.
  • organic sulfur compound which may be employed as the Group (B)
  • organic sulfur compound which may be employed as the Group (B)
  • 2-mercaptobenzothiazole thiourea, ethylene thiourea, l-phenyl-2-thiourea, l-allyl-2-thiourea, thiodiglycol, thiomalic acid, thiodiethanol, 2-mercaptobenzimidazole, dodecylmercaptan, thioglycolic acid, thiodiglycolic acid, etc.
  • An amount of the organic sulfur compound to be added is preferably 0.01 mg/l to 10 mg/l, a range of 0.1 mg/l to 5 mg/l being particularly preferred. If the added amount is less than 0.01 mg/l, stability of a plating solution is not so much improved; if more than 10 mg/l, a deposit rate is extremely lowered, which leads to a reduced working efficiency.
  • ethyleneamine compound there may be mentioned, for instance, ethylenediamine, diethylenetriamine, triethylenetetramine, tetraethylenepentamine, pentaethylenehexamine and so on.
  • An amount of the compound to be added is preferably 1 mg/l to 500 mg/l, a range of 5 mg/l to 100 mg/l being particularly preferred. If the added amount is less than 1 mg/l, a deposit rate of the plating solution or mechanical properties of the plated film is not so much improved; if more than 500 mg/l, a plating solution becomes unstable.
  • the present invention has the characteristics that at least one of the above Groups (A) and (B) is further incorporated, in addition to the four components of a copper salt, a complexing agent, a reducing agent and a pH adjustor; but, if the present plating solution contains only the above Group (A), stability and deposit rate of a plating solution and mechanical properties of a plated film may be far more improved by the addition of at least one of the organic sulfur compounds and ethyleneamine compounds.
  • At least one of a 2,2'-dipyridyl and a water-soluble cyan compound may be further added at a concentration in the plating solution of 1 - 100 mg/l, preferably 5 - 50 mg/l, in order to improve spreadability of a plated film and stability of plating solution. If the added amount is less than 1 mg/l, improvement in spreadability of a plated film or stability of a plating solution could not be expectable. If more than 100 mg/l, there will be produced a lowered deposit rate of a plating solution or a saturated effect for improved spreadability, which leads to useless increase in the added amount.
  • the chemical copper plating solution of the present invention can become a chemical copper plating solution having respective merits of the compounds, that is to say, the plating solution having an excellent stability and producing a highly spreadable plated film with a high speed deposit, when the above compounds having the above-mentioned functions are used in combination therewith at the predetermined proportion.
  • Preferable plating conditions under which the present chemical copper plating solution may be applied, are the range of a temperature of 40 - 80 °C, more preferably 50 - 70 °c and a p H value of 10.8 - 13.0, more preferably 12.0 - 13.0. According to such plating condition, characteristic of the present plating solution can be fully put to use and there can be formed a plated film which can be deposited at a high speed and has a high spreadability.
  • a stainless steel plate with a thickness of 0.3 mm was polished with a cleanser, dipped in a 10 % sodium hydroxide solution at 80 °C for one minute, taken out and washed with water. Then, it was dipped in a 10 % sulfuric acid at ordinary temperature for 30 seconds and washed with water to clean the surface thereof. The resultant stainless steel plate was then dipped in a solution having the composition of;
  • the plate was dipped in a solution having the composition of; for one minutes and washed in a running water for one minute.
  • the chemical copper plating solutions thus prepared were measured for deposit rate of copper. Such a measurement was accomplished by dipping a copper foil with a thickness of 10 um, the surface of which was previously cleaned, in the plating solution under conditions of a plating temperature of 60 °C and a pH value of the plating solution of 12.5 for one hour and calculating a deposit rate from the difference in weight before and after plating.
  • the catalyzed stainless steel plate with a thickness of 0.3 mm as described above was treated with the chemical copper plating solution to deposit plated films with a thickness of 30 - 35 um over both sides thereof, respectively, using plating conditions of a plating temperature of 60 °C and a pH value of the plating solution of 12.5.
  • the copper plated film thus deposited was peeled off from the stainless steel plate and applied to a spreadability test.
  • Spreadability was measured according to the following folding test at 180 °C; a plated film was first folded to one direction at 180 0 to make a fold and then restored to an original position and pressed to flat the fold. Such a procedure was counted as one folding and repeated until the plated film was broken at the folding portion. According to this test, spreadability of the plated film is represented in terms of the numbers of foldings which the plated film could resist.
  • nonionic surface active agents of the formulae (I) and (II) are represented with A-x and B-x, respectively, said "x"s in A-x and B-x indicating m 1 + n 1 and m 2 + n 2 , respectively.
  • Comparative Example 1 a plating solution was prepared in the same manner as in the above Examples except for using a compound other than the present invention in place of the component other than the nonionic surface active agents in the Group(A).
  • a stainless steel plate with a thickness of 0.3 mm was polished with a cleanser, dipped in a 10 % sodium hydroxide solution at 80 °c for 5 minutes, taken out and washed with water. Then, it was dipped in a 10 % hydrochloric acid at ordinary temperature for 5 minutes and washed with water to clean the surface thereof.
  • the resultant stainless steel plate was dipped in a solution having the composition of;
  • the chemical copper plating solution thus prepared was measured for deposit rate of copper. Such a measurement was accomplished by dipping a copper foil with a thickness of 10 um, the surface of which was previously cleaned, in the plating solution for one hour under conditions of a plating temperature of 60 °C and a p H value of the plating solution of 12.3 and calculating a deposit rate from the difference in the weight before and after plating.
  • Plating solutions were prepared in the same manner as in the above Examples 13 - 24 except that either of an organic sulfur compound and an ethyleneamine compound was incorporated or none of both was added. Similar tests as in the above Examples 13 - 24 were carried out to those and the results are also shown in Table 2.
  • the chemical copper plating solution of the present invention can show an excellent stability usable over prolonged period, together with a high speed deposit, and produce a plated film having superior mechanical properties, inter alia, a good spreadability as illustrated with folding strength.
  • application of the chemical copper plating solution of the present invention can greatly improve working efficiency for plating and further enhance reliability in forming a plated film.
  • the chemical copper plating solution of the present invention may be most suitable for production of, e.g., a continuity circuit in a print distributing plate and is highly valuable in an industrial field.

Landscapes

  • Chemical & Material Sciences (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Chemically Coating (AREA)
  • Manufacturing Of Printed Wiring (AREA)

Abstract

There is disclosed a chemical copper plating solution containing a copper salt, a complexing agent, a reducing agent and a pH adjustor which further comprises at least one of the following Groups (A) and (B); Group (A); at least one non-ionic surface active agent selected from the group consisting of a non-ionic surface active agent having the formula:
Figure imga0001
(wherein m, and n, each represent an integer of 1 or more) and a non-ionic surface active agent having formula:
Figure imga0002
(wherein m2 and n2 each represent an integer of 1 or more), and at least one compound selected from the group consisting of 1,10-phenanthroline, a 1,10-phenanthroline derivative, 2,2'-dipyridyl, 2,2'-biquinotine and a water-soluble cyan compound; Group (B); an organic sulfur compound and an ethyleneamine compound.

Description

    BACKGROUND OF THE INVENTION
  • This invention relates to a chemical copper plating solution. More particularly, it is concerned with a chemical copper plating solution having a novel composition which makes it possible to deposit copper at a high speed and is stable over a prolonged period of application and can form a plated film having favourable mechanical properties.
  • A chemical copper plating solution may usually contain as essential components a water-soluble copper salt such as copper sulfate, cupric chloride, etc.; a complexing agent such as ethylenediaminetetraacetic acid (EDTA), N,N,N',N'-tetrakis-(2-hydroxypropyl)ethylenediamine, Rochelle salt, etc.; a reducing agent such as formaldehyde, dimethylaminoborane, sodium borohydride, etc.; a pH adjustor such as sodium hydroxide, potassium hydroxide, etc.; and, where necessary, a surface active agent such as a polyethylene oxide, a polyether, a polyester, etc.
  • However, a chemical copper plating solution having the composition of such components generally tends to lack stability and readily undergo self-decomposition; moreover, a plated film or deposited film made from said chemical plating solution is brittle and insufficient in mechanical strength, particularly bending strength for practical utility.
  • In order to improve such defects, there has been proposed a chemical copper plating solution wherein there were further added a variety of additives, e.g., a dipyridyl, a phenanthroline, a water-soluble cyan compound, an inorganic or organic sulfur compound or a polymeric substance, in addition to prior plating components, i.e., a copper salt, a complexing salt, a reducing agent and a pH adjustor (see Japanese Patent Publications Nos. 1084/1965 and 11521/1968 and Japanese Provisional Patent Publication No. 68033/1977.).
  • However, even when the above-mentioned components would be added, stability of a plating solution and mechanical properties of a plated film have not yet been improved satisfactorily and, further, there have been inevitably presented problems of a slower deposit rate in plating and a reduced productivity owing to such components supplemented.
  • SUMMARY OF THE INVENTION
  • The primary object of this invention is to provide a chemical copper plating solution having a novel composition which can dissolve the aforesaid problems, show a good stability, without reducing high speed deposit in plating, and provide good mechanical properties, especially a favourable spreadability of the resultant plated film.
  • The chemical copper plating solution of this invention is a chemical copper plating solution containing a copper salt, a complexing agent, a reducing agent and a pH adjustor, which further comprises at least one of the under-mentioned Groups (A) and (B):
    • (A) at least one nonionic surface active agent selected from the group consisting of a non-ionic surface active agent having the formula (I):
      Figure imgb0001
      (wherein m1 and n1 each represent an integer of 1 or more); and a nonionic surface active agent having the formula (II):
      Figure imgb0002
      (wherein m2 and n2 each represent an integer of 1 or more); and at least one selected from the group consisting of 1,10-phenanthroline, a 1,10-phenanthroline derivative, 2,2'-dipyridyl, 2,2'-biquinoline and a water-soluble cyan compound,
    • (B) an organic sulfur compound and an ethyleneamine compound.
    DESCRIPTION OF THE PREFERRED EMBODIMENTS
  • The chemical copper plating solution according to this invention is composed of, in addition to the four components of a copper salt, a complexing agnet, a reducing agent and a pH adjustor, at least one selected from the group consisting of, as Group (A), a nonionic surface active agent mentioned below and at least one selected from the group consisting of 1,10-phenanthroline, a 1,10-phenanthroline derivative, 2,2'-dipyridyl, 2,2'-biquinoline and a water-soluble cyan compound; and as Group (B), an organic sulfur compound and an ethyleneamine compound.
  • Of these components, a copper salt may supply a copper ion, while a reducing agent may reduce said copper ion to a metallic state. A complexing agent may form a stable complex with copper ions to prevent, in a plating bath (alkaline), a formation of cupric hydroxide, while a pH adjustor may adjust the optimum plating deposit potential in a plating bath. These components may be of any of those usually employed for the preparation of a prior chemical copper plating solution.
  • Of the Group (A), the nonionic surface active agent may contribute to mechanical properties and deposit rate of a plating solution and is represented by the formula (I) or (II).
  • In the formulae (I) and (II), each of ml, m2, n1 and n 2 is an integer of 1 or more. If any of them is 0 (zero), a nonionic surface active agent shows a low solubility so that a sufficient amount thereof to contribute to improvement in stability or mechanical properties of a plating solution could not be dissolved in a plating solution. On the other hand, as ml + n1 or m2 + n2 is increased, stability and mechanical properties of a plating solution may be correspondingly improved. In any case, its effect may approximately reach the upper limit at the neighborhood of 20 to a saturated state. Thus, there is particularly no upper limit with regard to ml + n1 or m2 + n2, but not more than 500 is preferred in view of workability.
  • A concentration of the compound (I) or (II) in a plating solution is preferably in the range of 10 mg/l to 30 g/1. In particular, where each of m1 + n1 and m2 + n2 is less than 20, a range of 30 mg/l to 20 g/1 is preferred. Where each of m1 + n1 and m2 + n2 is not less than 20, a range of 10 mg/l to 5 g/1 is preferred.
  • In this invention, there is further added at least one of 1,10-phenanthroline, a 1,10-phenanthroline derivative, 2,2'-dipyridyl, 2,2'-biquinoline or a water-soluble cyan compound, in order that the aforesaid effects by nonionic surface active ageant, especially stability of a plating solution or mechanical properties of a plated film may be far more enhanced.
  • The 1,10-phenanthroline derivative may preferably have a substituent such as a lower alkyl group, e.g., a methyl group, an ethyl group, etc. or a phenyl group and there may illustratively be mentioned 2,9-dimethyl-1,10-phenanthroline, 4,7-diphenyl-2,9-dimethyl-1,10-phenanthroline, 4,7-diphenyl-1,10-phenanthroline and so on.
  • As the water-soluble cyan compound, there may be mentioned, for instance, potassium cyanide, sodium cyanide, sodium nitroprusside, potassium ferrocyanide, potassium ferricyanide, potassium tetracyanoniccolate and so on.
  • A total amount of 1,10-phenanthroline, a 1,10-phenanthroline derivative, 2,2'-dipyridyl and 2,2'-biquinoline to be added is preferably 1 - 200 mg/l, a range of 2 - 50 mg/l being particularly preferred. If the added amount is less than 1 mg/1, one could not obtain effects at all;
  • if said amount is more than 200 mg/l, there would undesirably produce a reduced stability of a plating solution or a reduced mechanical property of a plated film.
  • An amount of the water-soluble cyan compound to be added is preferably 1 mg/1 to 3 g/l, a range of 5 mg/l to 1 g/1 being particularly preferred. If the added amount is less than 1 mg/l, it does not at all contribute to improvement in stability and mechanical properties, while, if more than 3 g/l, there would undesirably produce a lowered deposit rate or a reduced mechanical property of a plated film.
  • Also, the organic sulfur compound added as the Group (B) may contribute to improved stability of a plating solution, while the ethyleneamine compound may contribute to speed-up of a deposit rate.
  • As the organic sulfur compound which may be employed as the Group (B), there may be mentioned, for instance, 2-mercaptobenzothiazole, thiourea, ethylene thiourea, l-phenyl-2-thiourea, l-allyl-2-thiourea, thiodiglycol, thiomalic acid, thiodiethanol, 2-mercaptobenzimidazole, dodecylmercaptan, thioglycolic acid, thiodiglycolic acid, etc. An amount of the organic sulfur compound to be added is preferably 0.01 mg/l to 10 mg/l, a range of 0.1 mg/l to 5 mg/l being particularly preferred. If the added amount is less than 0.01 mg/l, stability of a plating solution is not so much improved; if more than 10 mg/l, a deposit rate is extremely lowered, which leads to a reduced working efficiency.
  • As the ethyleneamine compound, there may be mentioned, for instance, ethylenediamine, diethylenetriamine, triethylenetetramine, tetraethylenepentamine, pentaethylenehexamine and so on. An amount of the compound to be added is preferably 1 mg/l to 500 mg/l, a range of 5 mg/l to 100 mg/l being particularly preferred. If the added amount is less than 1 mg/l, a deposit rate of the plating solution or mechanical properties of the plated film is not so much improved; if more than 500 mg/l, a plating solution becomes unstable.
  • The present invention has the characteristics that at least one of the above Groups (A) and (B) is further incorporated, in addition to the four components of a copper salt, a complexing agent, a reducing agent and a pH adjustor; but, if the present plating solution contains only the above Group (A), stability and deposit rate of a plating solution and mechanical properties of a plated film may be far more improved by the addition of at least one of the organic sulfur compounds and ethyleneamine compounds.
  • Also, where the present plating solution contains only the above Group (B), at least one of a 2,2'-dipyridyl and a water-soluble cyan compound may be further added at a concentration in the plating solution of 1 - 100 mg/l, preferably 5 - 50 mg/l, in order to improve spreadability of a plated film and stability of plating solution. If the added amount is less than 1 mg/l, improvement in spreadability of a plated film or stability of a plating solution could not be expectable. If more than 100 mg/l, there will be produced a lowered deposit rate of a plating solution or a saturated effect for improved spreadability, which leads to useless increase in the added amount.
  • Therefore, the chemical copper plating solution of the present invention can become a chemical copper plating solution having respective merits of the compounds, that is to say, the plating solution having an excellent stability and producing a highly spreadable plated film with a high speed deposit, when the above compounds having the above-mentioned functions are used in combination therewith at the predetermined proportion.
  • Preferable plating conditions, under which the present chemical copper plating solution may be applied, are the range of a temperature of 40 - 80 °C, more preferably 50 - 70 °c and a pH value of 10.8 - 13.0, more preferably 12.0 - 13.0. According to such plating condition, characteristic of the present plating solution can be fully put to use and there can be formed a plated film which can be deposited at a high speed and has a high spreadability.
  • This invention will be more fully illustrated by way of the following examples.
  • Examples 1 - 12
  • A stainless steel plate with a thickness of 0.3 mm was polished with a cleanser, dipped in a 10 % sodium hydroxide solution at 80 °C for one minute, taken out and washed with water. Then, it was dipped in a 10 % sulfuric acid at ordinary temperature for 30 seconds and washed with water to clean the surface thereof. The resultant stainless steel plate was then dipped in a solution having the composition of;
  • Figure imgb0003
  • for 2 minutes and washed in a running water for one minute. Thereafter, the plate was dipped in a solution having the composition of;
    Figure imgb0004
    for one minutes and washed in a running water for one minute.
  • On the other hand, there were prepared various chemical copper plating solutions having the following compositions;
    Figure imgb0005
  • The chemical copper plating solutions thus prepared were measured for deposit rate of copper. Such a measurement was accomplished by dipping a copper foil with a thickness of 10 um, the surface of which was previously cleaned, in the plating solution under conditions of a plating temperature of 60 °C and a pH value of the plating solution of 12.5 for one hour and calculating a deposit rate from the difference in weight before and after plating.
  • Then, the catalyzed stainless steel plate with a thickness of 0.3 mm as described above was treated with the chemical copper plating solution to deposit plated films with a thickness of 30 - 35 um over both sides thereof, respectively, using plating conditions of a plating temperature of 60 °C and a pH value of the plating solution of 12.5.
  • The copper plated film thus deposited was peeled off from the stainless steel plate and applied to a spreadability test. Spreadability was measured according to the following folding test at 180 °C; a plated film was first folded to one direction at 180 0 to make a fold and then restored to an original position and pressed to flat the fold. Such a procedure was counted as one folding and repeated until the plated film was broken at the folding portion. According to this test, spreadability of the plated film is represented in terms of the numbers of foldings which the plated film could resist.
  • Also, stability of the plating solution was evaluated by repeating dipping of the material to be plated, while properly supplementing a plating bath with components of respective plating compositions, counting as one cycle the point when all copper ions originally involved were deposited and measuring how many cycles the plating solution would be not usable by self-decomposition.
  • The results are summarized in Table 1, with regard to corresponding copper plating solutions, wherein deposit rate (um/hr) of each copper plated film is also shown. The numbers of 1 - 12 in Table 1 indicate the Examples of the present invention.
  • And nonionic surface active agents of the formulae (I) and (II) are represented with A-x and B-x, respectively, said "x"s in A-x and B-x indicating m1 + n1 and m2 + n2, respectively.
  • Comparative Examples 1-2
  • In Comparative Example 1, a plating solution was prepared in the same manner as in the above Examples except for using a compound other than the present invention in place of the component other than the nonionic surface active agents in the Group(A).
  • While a plating solution for Comparative Example 2 was prepared in the same manner as in the above Examples except for using a compound other than the present invention in place of the nonionic surface active agent in the Group (A).
  • Then, similar tests as in the above Examples were carried out to those and the results are also shown in Table 1.
    Figure imgb0006
    Figure imgb0007
  • Examples 13 - 24
  • A stainless steel plate with a thickness of 0.3 mm was polished with a cleanser, dipped in a 10 % sodium hydroxide solution at 80 °c for 5 minutes, taken out and washed with water. Then, it was dipped in a 10 % hydrochloric acid at ordinary temperature for 5 minutes and washed with water to clean the surface thereof. The resultant stainless steel plate was dipped in a solution having the composition of;
  • Figure imgb0008
  • for 2 minutes and washed in a running water for 1 minute. Then, it was dipped in a solution having the composition of;
    Figure imgb0009
  • for 1 minute and washed in a running water. Thereafter, a solution having the following composition was prepared;
    Figure imgb0010
    Figure imgb0011
  • To 1l of the resultant solution was added an indicated amount of each additive as shown in Table 2 to form a chemical copper plating solution.
  • The chemical copper plating solution thus prepared was measured for deposit rate of copper. Such a measurement was accomplished by dipping a copper foil with a thickness of 10 um, the surface of which was previously cleaned, in the plating solution for one hour under conditions of a plating temperature of 60 °C and a pH value of the plating solution of 12.3 and calculating a deposit rate from the difference in the weight before and after plating.
  • Then, by using such chemical copper plating solutions, a plated film with a thickness of 30 - 35 um was deposited over both sides of a catalyzed stainless steel with a thickness of 0.3 mm. Spreadability of the plated film was tested in the same manner as in above Examples 1 - 12.
  • Then, stability of the copper plating solution was tested. That is to say, to 100 ml of the plating solution prepared at a plating temperature of 60 °C and a pH value of the plating solution of 12.3 were added two droplets of a solution having the composition of;
  • Figure imgb0012
    The time until the resultant plating solution was decomposed under the above-mentioned conditions was measured.
  • The results are summarized in Table 2, with regard to corresponding copper plating solutions of various compositions.
  • Comparative Examples 3 - 7
  • Plating solutions were prepared in the same manner as in the above Examples 13 - 24 except that either of an organic sulfur compound and an ethyleneamine compound was incorporated or none of both was added. Similar tests as in the above Examples 13 - 24 were carried out to those and the results are also shown in Table 2.
    Figure imgb0013
    Figure imgb0014
  • As explained hereinabove, the chemical copper plating solution of the present invention can show an excellent stability usable over prolonged period, together with a high speed deposit, and produce a plated film having superior mechanical properties, inter alia, a good spreadability as illustrated with folding strength.
  • Accordingly, application of the chemical copper plating solution of the present invention can greatly improve working efficiency for plating and further enhance reliability in forming a plated film.
  • Therefore, the chemical copper plating solution of the present invention may be most suitable for production of, e.g., a continuity circuit in a print distributing plate and is highly valuable in an industrial field.

Claims (16)

1. A chemical copper plating solution containing a copper salt, a complexing agent, a reducing agent and a pH adjustor which further comprises at least one of the following Groups (A) and (B):
Group (A);
at least one nonionic surface active agent selected from the group consisting of a nonionic surface active agent having the formula:
Figure imgb0015
0(wherein m1 and n1 each represent an integer of 1 or more) and a non-ionic surface active agent having the formula:
Figure imgb0016
(wherein m2 and n2 each represent an integer of 1 or more), and at least one compound selected from the group consisting of 1,10-phenanthroline, a 1,10-phenanthroline derivative, 2,2'-dipyridyl, 2,2'-biquinoline and a water-soluble cyan compound;
Group (B);
an organic sulfur compound and an ethyleneamine compound.
2. The chemical copper plating solution as claimed in Claim 1, wherein the complexing agent is a cupric ion complexing agent.
3. The chemical copper plating solution as claimed in Claim 1, wherein the ethyleneamine compound is an ethylenepolyamine compound.
4. The chemical copper plating solution as claimed in Claim 1, wherein a concentration of the nonionic surface active agent of the formula (I) and (II) is 10 mg/l to 30 g/l.
5. The chemical copper plating solution as claimed in Claim 1, wherein the m1 + n1 and m2 + n2 are not more than 500.
6. The chemical copper plating solution as claimed in Claim 1, wherein a total concentration of 1,10-phenanthroline, a 1,10-phenanthroline derivative, 2,2'-dipyridyl and 2,2'-biquinoline is 1 - 200 mg/l.
7. The chemical copper plating solution as claimed in Claim 1, wherein a concentration of the water-soluble cyan compound is 1 mg/l to 3 g/1.
8. The chemical copper plating solution as claimed in Claim 1, wherein a concentration of the organic sulfur compound is 0.01 - 10 mg/1.
9. The chemical copper plating solution as claimed in Claim 1, wherein a concentration of the ethyleneamine compound is 1 - 500 mg/1.
10. A method for application of a chemical copper plating solution as claimed in Claim 1, wherein application condition is 40 - 80 °C and pH of 10.8 - 13.0.
11. The chemical copper plating solution as claimed in Claim 1, wherein there is contained a compound of the Group (A).
12. The chemical copper plating solution as claimed in Claim 11, wherein an organic sulfur compound or an ethyleneamine compound is further incorporated.
13. The chemical copper plating solution as claimed in Claim 1, wherein there is contained a compound of the Group (B).
14. The chemical copper plating solution as claimed in Claim 13, whrein at least one of a 2,2'-dipyridyl and a water-soluble cyan compound is further incorporated.
15. The chemical copper plating solution as claimed in Claim 14, wherein a concentration of the 2,2'-dipyridyl is 1 - 100 mg/1.
16. The chemical copper plating solution as claimed in Claim 14, wherein a concentration of the water-soluble cyan compound is 1 - 100 mg/1.
EP85109921A 1984-09-27 1985-08-07 Chemical copper plating solution Expired - Lifetime EP0179212B1 (en)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP20044584A JPS6179775A (en) 1984-09-27 1984-09-27 Chemical copper plating solution
JP200445/84 1984-09-27
JP27330384A JPS61153281A (en) 1984-12-26 1984-12-26 Chemical copper plating solution
JP273303/84 1984-12-26

Publications (3)

Publication Number Publication Date
EP0179212A2 true EP0179212A2 (en) 1986-04-30
EP0179212A3 EP0179212A3 (en) 1988-01-27
EP0179212B1 EP0179212B1 (en) 1991-12-27

Family

ID=26512194

Family Applications (1)

Application Number Title Priority Date Filing Date
EP85109921A Expired - Lifetime EP0179212B1 (en) 1984-09-27 1985-08-07 Chemical copper plating solution

Country Status (2)

Country Link
EP (1) EP0179212B1 (en)
DE (1) DE3585017D1 (en)

Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3377174A (en) * 1963-10-24 1968-04-09 Torigai Eiichi Method and bath for chemically plating copper
US3661597A (en) * 1971-05-20 1972-05-09 Shipley Co Electroless copper plating
US3902907A (en) * 1973-08-17 1975-09-02 Kazutaka Kishita System for electroless plating of copper and composition
US3959531A (en) * 1971-04-23 1976-05-25 Photocircuits Corporation Improvements in electroless metal plating
FR2436192A1 (en) * 1978-09-13 1980-04-11 Kollmorgen Tech Corp IMPROVEMENT TO THE NON-GALVANIC COPPER DEPOSIT
EP0039757A1 (en) * 1980-05-08 1981-11-18 Kabushiki Kaisha Toshiba Chemical copper-plating bath
EP0107087A1 (en) * 1982-09-28 1984-05-02 Hitachi Chemical Co., Ltd. Electroless copper deposition solution

Patent Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3377174A (en) * 1963-10-24 1968-04-09 Torigai Eiichi Method and bath for chemically plating copper
US3959531A (en) * 1971-04-23 1976-05-25 Photocircuits Corporation Improvements in electroless metal plating
US3661597A (en) * 1971-05-20 1972-05-09 Shipley Co Electroless copper plating
US3902907A (en) * 1973-08-17 1975-09-02 Kazutaka Kishita System for electroless plating of copper and composition
FR2436192A1 (en) * 1978-09-13 1980-04-11 Kollmorgen Tech Corp IMPROVEMENT TO THE NON-GALVANIC COPPER DEPOSIT
EP0039757A1 (en) * 1980-05-08 1981-11-18 Kabushiki Kaisha Toshiba Chemical copper-plating bath
EP0107087A1 (en) * 1982-09-28 1984-05-02 Hitachi Chemical Co., Ltd. Electroless copper deposition solution

Also Published As

Publication number Publication date
EP0179212A3 (en) 1988-01-27
DE3585017D1 (en) 1992-02-06
EP0179212B1 (en) 1991-12-27

Similar Documents

Publication Publication Date Title
US4684550A (en) Electroless copper plating and bath therefor
CN101684554B (en) Chemical copper plating solution for polyimide film and surface chemical copper plating method thereof
TW200902758A (en) Electroless gold plating bath, electroless gold plating method and electronic parts
KR880000471B1 (en) Electrodysisless copper deposition solution
CA1122753A (en) Palladium alloy and baths for the electroless deposition thereof
KR890004582B1 (en) Electroless copper plating solution
EP0039757B1 (en) Chemical copper-plating bath
KR20040050887A (en) Electroless Gold Plating Solution
US4341846A (en) Palladium boron plates by electroless deposition alloy
US4279951A (en) Method for the electroless deposition of palladium
US3661597A (en) Electroless copper plating
JPH02305971A (en) Nonelectrolytic copper plating solution without containing formaldehyde
CN103726056B (en) The protectant preparation method of a kind of water soluble molecules self-assembled film shaped metal
CN1428456A (en) Plating method
US3717520A (en) Composition and method for selectively stripping nickel and/or copper
US4138267A (en) Compositions for chemical copper plating
EP0179212B1 (en) Chemical copper plating solution
JPH05148662A (en) Copper electroless plating solution
US3902907A (en) System for electroless plating of copper and composition
WO2005098088A1 (en) Electroless gold plating liquid
EP3517651B1 (en) Electroless gold plating bath
US3741905A (en) Preparation of through hole printed circuit boards and compositions useful therefor
US3677776A (en) Electroless plating solutions for cadmium and cadmium copper alloys
KR950010655B1 (en) Electroless plating solution of a plastic material to solved easliy an alkali
JPS6179775A (en) Chemical copper plating solution

Legal Events

Date Code Title Description
PUAI Public reference made under article 153(3) epc to a published international application that has entered the european phase

Free format text: ORIGINAL CODE: 0009012

AK Designated contracting states

Kind code of ref document: A2

Designated state(s): DE FR GB NL

PUAL Search report despatched

Free format text: ORIGINAL CODE: 0009013

AK Designated contracting states

Kind code of ref document: A3

Designated state(s): DE FR GB NL

17P Request for examination filed

Effective date: 19880607

17Q First examination report despatched

Effective date: 19900321

GRAA (expected) grant

Free format text: ORIGINAL CODE: 0009210

AK Designated contracting states

Kind code of ref document: B1

Designated state(s): DE FR GB NL

REF Corresponds to:

Ref document number: 3585017

Country of ref document: DE

Date of ref document: 19920206

ET Fr: translation filed
PLBE No opposition filed within time limit

Free format text: ORIGINAL CODE: 0009261

STAA Information on the status of an ep patent application or granted ep patent

Free format text: STATUS: NO OPPOSITION FILED WITHIN TIME LIMIT

26N No opposition filed
PGFP Annual fee paid to national office [announced via postgrant information from national office to epo]

Ref country code: GB

Payment date: 19960729

Year of fee payment: 12

PGFP Annual fee paid to national office [announced via postgrant information from national office to epo]

Ref country code: FR

Payment date: 19960809

Year of fee payment: 12

PGFP Annual fee paid to national office [announced via postgrant information from national office to epo]

Ref country code: NL

Payment date: 19960828

Year of fee payment: 12

PG25 Lapsed in a contracting state [announced via postgrant information from national office to epo]

Ref country code: GB

Free format text: LAPSE BECAUSE OF NON-PAYMENT OF DUE FEES

Effective date: 19970807

PG25 Lapsed in a contracting state [announced via postgrant information from national office to epo]

Ref country code: NL

Free format text: LAPSE BECAUSE OF NON-PAYMENT OF DUE FEES

Effective date: 19980301

GBPC Gb: european patent ceased through non-payment of renewal fee

Effective date: 19970807

PG25 Lapsed in a contracting state [announced via postgrant information from national office to epo]

Ref country code: FR

Free format text: LAPSE BECAUSE OF NON-PAYMENT OF DUE FEES

Effective date: 19980430

NLV4 Nl: lapsed or anulled due to non-payment of the annual fee

Effective date: 19980301

REG Reference to a national code

Ref country code: FR

Ref legal event code: ST

PGFP Annual fee paid to national office [announced via postgrant information from national office to epo]

Ref country code: DE

Payment date: 20040819

Year of fee payment: 20