DK3364298T3 - System og fremgangsmåde til hukommelseskredsløb - Google Patents
System og fremgangsmåde til hukommelseskredsløb Download PDFInfo
- Publication number
- DK3364298T3 DK3364298T3 DK18166674.4T DK18166674T DK3364298T3 DK 3364298 T3 DK3364298 T3 DK 3364298T3 DK 18166674 T DK18166674 T DK 18166674T DK 3364298 T3 DK3364298 T3 DK 3364298T3
- Authority
- DK
- Denmark
- Prior art keywords
- procedure
- memory circuits
- circuits
- memory
- Prior art date
Links
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C5/00—Details of stores covered by group G11C11/00
- G11C5/02—Disposition of storage elements, e.g. in the form of a matrix array
- G11C5/04—Supports for storage elements, e.g. memory modules; Mounting or fixing of storage elements on such supports
-
- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06F—ELECTRIC DIGITAL DATA PROCESSING
- G06F1/00—Details not covered by groups G06F3/00 - G06F13/00 and G06F21/00
- G06F1/26—Power supply means, e.g. regulation thereof
- G06F1/32—Means for saving power
- G06F1/3203—Power management, i.e. event-based initiation of a power-saving mode
- G06F1/3206—Monitoring of events, devices or parameters that trigger a change in power modality
- G06F1/3215—Monitoring of peripheral devices
- G06F1/3225—Monitoring of peripheral devices of memory devices
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
- G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
- G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
- G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
- G11C11/4074—Power supply or voltage generation circuits, e.g. bias voltage generators, substrate voltage generators, back-up power, power control circuits
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C5/00—Details of stores covered by group G11C11/00
- G11C5/06—Arrangements for interconnecting storage elements electrically, e.g. by wiring
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C5/00—Details of stores covered by group G11C11/00
- G11C5/14—Power supply arrangements, e.g. power down, chip selection or deselection, layout of wirings or power grids, or multiple supply levels
- G11C5/148—Details of power up or power down circuits, standby circuits or recovery circuits
-
- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06F—ELECTRIC DIGITAL DATA PROCESSING
- G06F2213/00—Indexing scheme relating to interconnection of, or transfer of information or other signals between, memories, input/output devices or central processing units
- G06F2213/0038—System on Chip
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
- G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
- G11C11/406—Management or control of the refreshing or charge-regeneration cycles
- G11C11/40611—External triggering or timing of internal or partially internal refresh operations, e.g. auto-refresh or CAS-before-RAS triggered refresh
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C2207/00—Indexing scheme relating to arrangements for writing information into, or reading information out from, a digital store
- G11C2207/22—Control and timing of internal memory operations
- G11C2207/2272—Latency related aspects
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C2211/00—Indexing scheme relating to digital stores characterized by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C2211/401—Indexing scheme relating to cells needing refreshing or charge regeneration, i.e. dynamic cells
- G11C2211/406—Refreshing of dynamic cells
- G11C2211/4067—Refresh in standby or low power modes
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C8/00—Arrangements for selecting an address in a digital store
- G11C8/12—Group selection circuits, e.g. for memory block selection, chip selection, array selection
Landscapes
- Engineering & Computer Science (AREA)
- Theoretical Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- General Engineering & Computer Science (AREA)
- General Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Dram (AREA)
- Power Sources (AREA)
Applications Claiming Priority (10)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US11/461,439 US7580312B2 (en) | 2006-07-31 | 2006-07-31 | Power saving system and method for use with a plurality of memory circuits |
US11/524,730 US7472220B2 (en) | 2006-07-31 | 2006-09-20 | Interface circuit system and method for performing power management operations utilizing power management signals |
US11/524,716 US7392338B2 (en) | 2006-07-31 | 2006-09-20 | Interface circuit system and method for autonomously performing power management operations in conjunction with a plurality of memory circuits |
US11/524,811 US7590796B2 (en) | 2006-07-31 | 2006-09-20 | System and method for power management in memory systems |
US11/524,812 US7386656B2 (en) | 2006-07-31 | 2006-09-20 | Interface circuit system and method for performing power management operations in conjunction with only a portion of a memory circuit |
US11/538,041 US20080082763A1 (en) | 2006-10-02 | 2006-10-02 | Apparatus and method for power management of memory circuits by a system or component thereof |
US11/584,179 US7581127B2 (en) | 2006-07-31 | 2006-10-20 | Interface circuit system and method for performing power saving operations during a command-related latency |
US11/762,010 US8041881B2 (en) | 2006-07-31 | 2007-06-12 | Memory device with emulated characteristics |
US11/762,013 US8090897B2 (en) | 2006-07-31 | 2007-06-12 | System and method for simulating an aspect of a memory circuit |
EP12150807.1A EP2442310A3 (en) | 2006-07-31 | 2007-07-18 | Power management for memory circuit |
Publications (1)
Publication Number | Publication Date |
---|---|
DK3364298T3 true DK3364298T3 (da) | 2020-03-02 |
Family
ID=56290996
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DK18166674.4T DK3364298T3 (da) | 2006-07-31 | 2007-07-18 | System og fremgangsmåde til hukommelseskredsløb |
Country Status (3)
Country | Link |
---|---|
EP (4) | EP2054803A4 (da) |
DK (1) | DK3364298T3 (da) |
WO (1) | WO2008063251A2 (da) |
Families Citing this family (38)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US8244971B2 (en) | 2006-07-31 | 2012-08-14 | Google Inc. | Memory circuit system and method |
US8359187B2 (en) | 2005-06-24 | 2013-01-22 | Google Inc. | Simulating a different number of memory circuit devices |
US9171585B2 (en) | 2005-06-24 | 2015-10-27 | Google Inc. | Configurable memory circuit system and method |
US8089795B2 (en) | 2006-02-09 | 2012-01-03 | Google Inc. | Memory module with memory stack and interface with enhanced capabilities |
US9507739B2 (en) | 2005-06-24 | 2016-11-29 | Google Inc. | Configurable memory circuit system and method |
US9542352B2 (en) | 2006-02-09 | 2017-01-10 | Google Inc. | System and method for reducing command scheduling constraints of memory circuits |
US20080082763A1 (en) | 2006-10-02 | 2008-04-03 | Metaram, Inc. | Apparatus and method for power management of memory circuits by a system or component thereof |
US7609567B2 (en) | 2005-06-24 | 2009-10-27 | Metaram, Inc. | System and method for simulating an aspect of a memory circuit |
US10013371B2 (en) | 2005-06-24 | 2018-07-03 | Google Llc | Configurable memory circuit system and method |
US8397013B1 (en) | 2006-10-05 | 2013-03-12 | Google Inc. | Hybrid memory module |
US9632929B2 (en) | 2006-02-09 | 2017-04-25 | Google Inc. | Translating an address associated with a command communicated between a system and memory circuits |
US8516185B2 (en) | 2009-07-16 | 2013-08-20 | Netlist, Inc. | System and method utilizing distributed byte-wise buffers on a memory module |
US8639874B2 (en) | 2008-12-22 | 2014-01-28 | International Business Machines Corporation | Power management of a spare DRAM on a buffered DIMM by issuing a power on/off command to the DRAM device |
US9105323B2 (en) * | 2009-01-23 | 2015-08-11 | Micron Technology, Inc. | Memory device power managers and methods |
US8811110B2 (en) | 2012-06-28 | 2014-08-19 | Intel Corporation | Configuration for power reduction in DRAM |
US10586795B1 (en) | 2018-04-30 | 2020-03-10 | Micron Technology, Inc. | Semiconductor devices, and related memory devices and electronic systems |
US11282815B2 (en) | 2020-01-14 | 2022-03-22 | Micron Technology, Inc. | Methods of forming microelectronic devices, and related microelectronic devices and electronic systems |
US11563018B2 (en) | 2020-06-18 | 2023-01-24 | Micron Technology, Inc. | Microelectronic devices, and related methods, memory devices, and electronic systems |
US11705367B2 (en) | 2020-06-18 | 2023-07-18 | Micron Technology, Inc. | Methods of forming microelectronic devices, and related microelectronic devices, memory devices, electronic systems, and additional methods |
US11699652B2 (en) | 2020-06-18 | 2023-07-11 | Micron Technology, Inc. | Microelectronic devices and electronic systems |
US11557569B2 (en) | 2020-06-18 | 2023-01-17 | Micron Technology, Inc. | Microelectronic devices including source structures overlying stack structures, and related electronic systems |
US11335602B2 (en) | 2020-06-18 | 2022-05-17 | Micron Technology, Inc. | Methods of forming microelectronic devices, and related microelectronic devices and electronic systems |
US11380669B2 (en) | 2020-06-18 | 2022-07-05 | Micron Technology, Inc. | Methods of forming microelectronic devices |
US11587919B2 (en) | 2020-07-17 | 2023-02-21 | Micron Technology, Inc. | Microelectronic devices, related electronic systems, and methods of forming microelectronic devices |
US11417676B2 (en) | 2020-08-24 | 2022-08-16 | Micron Technology, Inc. | Methods of forming microelectronic devices and memory devices, and related microelectronic devices, memory devices, and electronic systems |
US11825658B2 (en) | 2020-08-24 | 2023-11-21 | Micron Technology, Inc. | Methods of forming microelectronic devices and memory devices |
KR20230108274A (ko) * | 2020-11-23 | 2023-07-18 | 퀄컴 인코포레이티드 | 휴대용 컴퓨팅 디바이스의 메모리를 리프레싱하는 방법 및 시스템 |
US11751408B2 (en) | 2021-02-02 | 2023-09-05 | Micron Technology, Inc. | Methods of forming microelectronic devices, and related microelectronic devices, memory devices, and electronic systems |
US11837594B2 (en) | 2021-06-30 | 2023-12-05 | Micron Technology, Inc. | Microelectronic devices and electronic systems |
US11930634B2 (en) | 2021-06-30 | 2024-03-12 | Micron Technology, Inc. | Methods of forming microelectronic devices |
US11776925B2 (en) | 2021-06-30 | 2023-10-03 | Micron Technology, Inc. | Methods of forming microelectronic devices, and related microelectronic devices and electronic systems |
US11810838B2 (en) | 2021-06-30 | 2023-11-07 | Micron Technology, Inc. | Microelectronic devices, and related electronic systems and methods of forming microelectronic devices |
US11996377B2 (en) | 2021-06-30 | 2024-05-28 | Micron Technology, Inc. | Microelectronic devices and electronic systems |
US11785764B2 (en) | 2021-06-30 | 2023-10-10 | Micron Technology, Inc. | Methods of forming microelectronic devices |
US11842990B2 (en) | 2021-06-30 | 2023-12-12 | Micron Technology, Inc. | Microelectronic devices and electronic systems |
US12137549B2 (en) | 2021-08-30 | 2024-11-05 | Micron Technology, Inc. | Microelectronic devices comprising capacitor structures, and related electronic systems and methods |
US11751383B2 (en) | 2021-08-31 | 2023-09-05 | Micron Technology, Inc. | Methods of forming microelectronic devices, and related microelectronic devices and electronic systems |
US11791273B2 (en) | 2021-10-13 | 2023-10-17 | Micron Technology, Inc. | Microelectronic devices including contact structures, and related memory devices, electronic systems, and methods |
Family Cites Families (21)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5502667A (en) * | 1993-09-13 | 1996-03-26 | International Business Machines Corporation | Integrated multichip memory module structure |
US5438536A (en) * | 1994-04-05 | 1995-08-01 | U.S. Robotics, Inc. | Flash memory module |
US5590071A (en) * | 1995-11-16 | 1996-12-31 | International Business Machines Corporation | Method and apparatus for emulating a high capacity DRAM |
US6181640B1 (en) * | 1997-06-24 | 2001-01-30 | Hyundai Electronics Industries Co., Ltd. | Control circuit for semiconductor memory device |
US5835435A (en) * | 1997-12-02 | 1998-11-10 | Intel Corporation | Method and apparatus for dynamically placing portions of a memory in a reduced power consumtion state |
US6154821A (en) * | 1998-03-10 | 2000-11-28 | Rambus Inc. | Method and apparatus for initializing dynamic random access memory (DRAM) devices by levelizing a read domain |
US6442666B1 (en) * | 1999-01-28 | 2002-08-27 | Infineon Technologies Ag | Techniques for improving memory access in a virtual memory system |
US7356639B2 (en) * | 2000-01-05 | 2008-04-08 | Rambus Inc. | Configurable width buffered module having a bypass circuit |
US6434660B1 (en) * | 2000-05-23 | 2002-08-13 | Centennial Technologies, Inc. | Emulating one tape protocol of flash memory to a different type protocol of flash memory |
US6480845B1 (en) * | 2000-06-14 | 2002-11-12 | Bull Hn Information Systems Inc. | Method and data processing system for emulating virtual memory working spaces |
US6523089B2 (en) * | 2000-07-19 | 2003-02-18 | Rambus Inc. | Memory controller with power management logic |
US6356500B1 (en) * | 2000-08-23 | 2002-03-12 | Micron Technology, Inc. | Reduced power DRAM device and method |
US6631456B2 (en) * | 2001-03-06 | 2003-10-07 | Lance Leighnor | Hypercache RAM based disk emulation and method |
US6978352B2 (en) * | 2001-05-03 | 2005-12-20 | Hewlett-Packard Development Company, L.P. | Memory controller emulator for controlling memory devices in a memory system |
US6781911B2 (en) * | 2002-04-09 | 2004-08-24 | Intel Corporation | Early power-down digital memory device and method |
US7549066B2 (en) * | 2002-11-15 | 2009-06-16 | Intel Corporation | Automatic power savings stand-by control for non-volatile memory |
US7428644B2 (en) * | 2003-06-20 | 2008-09-23 | Micron Technology, Inc. | System and method for selective memory module power management |
US7752470B2 (en) * | 2003-12-03 | 2010-07-06 | International Business Machines Corporation | Method and system for power management including device controller-based device use evaluation and power-state control |
US7085152B2 (en) * | 2003-12-29 | 2006-08-01 | Intel Corporation | Memory system segmented power supply and control |
US7366931B2 (en) * | 2004-12-30 | 2008-04-29 | Intel Corporation | Memory modules that receive clock information and are placed in a low power state |
US20060181949A1 (en) * | 2004-12-31 | 2006-08-17 | Kini M V | Operating system-independent memory power management |
-
2007
- 2007-07-18 EP EP07870726A patent/EP2054803A4/en not_active Ceased
- 2007-07-18 EP EP12150807.1A patent/EP2442310A3/en not_active Ceased
- 2007-07-18 EP EP18166674.4A patent/EP3364298B1/en active Active
- 2007-07-18 WO PCT/US2007/016385 patent/WO2008063251A2/en active Application Filing
- 2007-07-18 DK DK18166674.4T patent/DK3364298T3/da active
- 2007-07-18 EP EP12150798A patent/EP2442309A3/en not_active Withdrawn
Also Published As
Publication number | Publication date |
---|---|
WO2008063251A3 (en) | 2008-10-16 |
EP2054803A2 (en) | 2009-05-06 |
EP2442310A2 (en) | 2012-04-18 |
EP2054803A4 (en) | 2009-10-21 |
WO2008063251A2 (en) | 2008-05-29 |
EP2442309A2 (en) | 2012-04-18 |
EP2442310A3 (en) | 2013-04-24 |
EP3364298B1 (en) | 2019-12-11 |
EP3364298A2 (en) | 2018-08-22 |
EP2442309A3 (en) | 2013-01-23 |
EP3364298A3 (en) | 2018-11-28 |
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