[go: up one dir, main page]
More Web Proxy on the site http://driver.im/

DE69327367D1 - Magnetoresistiver Wandler - Google Patents

Magnetoresistiver Wandler

Info

Publication number
DE69327367D1
DE69327367D1 DE69327367T DE69327367T DE69327367D1 DE 69327367 D1 DE69327367 D1 DE 69327367D1 DE 69327367 T DE69327367 T DE 69327367T DE 69327367 T DE69327367 T DE 69327367T DE 69327367 D1 DE69327367 D1 DE 69327367D1
Authority
DE
Germany
Prior art keywords
magnetoresistive transducer
magnetoresistive
transducer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69327367T
Other languages
English (en)
Other versions
DE69327367T2 (de
Inventor
Thierry Valet
Stephane Tyc
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Thales SA
Original Assignee
Thomson CSF SA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Thomson CSF SA filed Critical Thomson CSF SA
Application granted granted Critical
Publication of DE69327367D1 publication Critical patent/DE69327367D1/de
Publication of DE69327367T2 publication Critical patent/DE69327367T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y25/00—Nanomagnetism, e.g. magnetoimpedance, anisotropic magnetoresistance, giant magnetoresistance or tunneling magnetoresistance
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R33/00—Arrangements or instruments for measuring magnetic variables
    • G01R33/02—Measuring direction or magnitude of magnetic fields or magnetic flux
    • G01R33/06—Measuring direction or magnitude of magnetic fields or magnetic flux using galvano-magnetic devices
    • G01R33/09—Magnetoresistive devices
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
    • G11B5/127—Structure or manufacture of heads, e.g. inductive
    • G11B5/33—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only
    • G11B5/39—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects
    • G11B5/3903—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects using magnetic thin film layers or their effects, the films being part of integrated structures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F10/00—Thin magnetic films, e.g. of one-domain structure
    • H01F10/007—Thin magnetic films, e.g. of one-domain structure ultrathin or granular films
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N50/00—Galvanomagnetic devices
    • H10N50/80—Constructional details
    • H10N50/85—Magnetic active materials

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Nanotechnology (AREA)
  • Physics & Mathematics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Mathematical Physics (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Power Engineering (AREA)
  • Theoretical Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Hall/Mr Elements (AREA)
  • Measuring Magnetic Variables (AREA)
  • Magnetic Heads (AREA)
  • Adjustable Resistors (AREA)
  • Thin Magnetic Films (AREA)
DE69327367T 1992-06-23 1993-06-22 Magnetoresistiver Wandler Expired - Fee Related DE69327367T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR9207626A FR2692711B1 (fr) 1992-06-23 1992-06-23 Transducteur magnetoresistif.

Publications (2)

Publication Number Publication Date
DE69327367D1 true DE69327367D1 (de) 2000-01-27
DE69327367T2 DE69327367T2 (de) 2000-06-21

Family

ID=9431051

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69327367T Expired - Fee Related DE69327367T2 (de) 1992-06-23 1993-06-22 Magnetoresistiver Wandler

Country Status (6)

Country Link
US (1) US5463516A (de)
EP (1) EP0577469B1 (de)
JP (1) JP3383007B2 (de)
DE (1) DE69327367T2 (de)
FR (1) FR2692711B1 (de)
NO (1) NO932295L (de)

Families Citing this family (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW265440B (de) * 1993-04-30 1995-12-11 Ibm
US5818323A (en) * 1994-09-09 1998-10-06 Sanyo Electric Co., Ltd. Magnetoresistive device
US5773156A (en) * 1995-01-26 1998-06-30 Kabushiki Kaisha Toshiba Magnetoresistance effect element
US5767673A (en) * 1995-09-14 1998-06-16 Lucent Technologies Inc. Article comprising a manganite magnetoresistive element and magnetically soft material
JP3293437B2 (ja) * 1995-12-19 2002-06-17 松下電器産業株式会社 磁気抵抗効果素子、磁気抵抗効果型ヘッド及びメモリー素子
US6064552A (en) * 1997-03-18 2000-05-16 Kabushiki Kaisha Toshiba Magnetoresistive head having magnetic yoke and giant magnetoresistive element such that a first electrode is formed on the giant magnetoresistive element which in turn is formed on the magnetic yoke which acts as a second electrode
EP0877398B1 (de) * 1997-05-09 2003-12-17 Kabushiki Kaisha Toshiba Magnetisches Element und Magnetkopf oder Speicherelement die dieses Element verwenden
JPH1125425A (ja) * 1997-06-27 1999-01-29 Sony Corp 磁気ヘッド
JP3024612B2 (ja) 1997-10-23 2000-03-21 日本電気株式会社 磁気抵抗効果素子およびその製造方法
FR2774207B1 (fr) 1998-01-27 2000-04-28 Thomson Csf Dispositif d'inscription/lecture optique d'un support d'information
WO2000011664A1 (en) * 1998-08-25 2000-03-02 Koninklijke Philips Electronics N.V. Thin film shielded magnetic read head device
JP3477638B2 (ja) * 1999-07-09 2003-12-10 科学技術振興事業団 強磁性２重量子井戸トンネル磁気抵抗デバイス
JP3604617B2 (ja) * 2000-06-12 2004-12-22 富士通株式会社 磁気検出素子
FR2830971B1 (fr) * 2001-10-12 2004-03-12 Commissariat Energie Atomique Dispositif magnetoresistif a vanne de spin a performances ameliorees
US7829962B2 (en) * 2003-08-05 2010-11-09 C.R.F. Società Consortile Per Azioni Method for manufacturing magnetic field detection devices and devices therefrom
FR2891917B1 (fr) * 2005-10-07 2008-01-11 Billanco Capteurs de champ magnetique et de courant, procede de commande et noyau magnetique pour ces capteurs
EP1814172A1 (de) * 2006-01-27 2007-08-01 IEE International Electronics & Engineering S.A.R.L. Magnetfeldsensorelement
JP4878190B2 (ja) * 2006-03-23 2012-02-15 株式会社豊田中央研究所 磁気センサ
EP2180328A1 (de) * 2008-10-22 2010-04-28 Biomimetics Technologies Inc. Mikrochip zur Detektion von schwachen Quellen elektrischer und magnetischer Felder
CN102830370B (zh) * 2012-08-18 2015-04-29 中北大学 基于Fe3O4纳米颗粒的磁场检测装置及其制造方法
CN103424719B (zh) * 2013-07-10 2015-09-09 中北大学 一种基于纳米磁颗粒的磁矢量敏感元件及其制造方法

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3840898A (en) * 1972-12-29 1974-10-08 Ibm Self-biased magnetoresistive sensor
JPS61234083A (ja) * 1985-04-10 1986-10-18 Hitachi Ltd 磁気抵抗効果膜
US4663685A (en) * 1985-08-15 1987-05-05 International Business Machines Magnetoresistive read transducer having patterned longitudinal bias
DE3884514T2 (de) * 1987-07-29 1994-02-10 Sharp Kk Verfahren und Anordnung zum Nachweisen eines Magnetfeldes mittels der Magneto-widerstandseigenschaften eines supraleitenden Materials.
JPH0240972A (ja) * 1988-07-29 1990-02-09 Nec Corp 磁気抵抗効果薄膜
US5216560A (en) * 1989-11-22 1993-06-01 Hewlett-Packard Company Stabilization of magnetoresistive sensors using the longitudinal field produced by the current in the contact leads
US5043693A (en) * 1990-08-13 1991-08-27 The United States Of America As Represented By The Secretary Of The Navy Heterogeneous magnetoresistive layer

Also Published As

Publication number Publication date
NO932295D0 (no) 1993-06-22
EP0577469B1 (de) 1999-12-22
JP3383007B2 (ja) 2003-03-04
JPH0697534A (ja) 1994-04-08
US5463516A (en) 1995-10-31
EP0577469A1 (de) 1994-01-05
FR2692711B1 (fr) 1996-02-09
FR2692711A1 (fr) 1993-12-24
DE69327367T2 (de) 2000-06-21
NO932295L (no) 1993-12-27

Similar Documents

Publication Publication Date Title
DE69317178D1 (de) Magnetoresistiver Sensor
DK0687400T3 (da) Transducer
DE69316708D1 (de) Magneto-resistiver Fühler
DE69326308D1 (de) Magneto-resistiver Fühler
NO178386C (no) Transduser-anordning
DE69323618D1 (de) Pyrheliometrischer sensor
DE69021315D1 (de) Magnetoresistiver Wandler.
DE69426599D1 (de) Magnetoresistiver näherungssensor
DE69429586D1 (de) Hydrophonträger
DE69434482D1 (de) Verstärker
DE69327367D1 (de) Magnetoresistiver Wandler
DK76293D0 (da) Forskydningstransducer
DE59305576D1 (de) Hydrophon
NO934380D0 (no) Hurtigb}t
DE69305933D1 (de) Magnetoresistives Element
DE69225589D1 (de) Vorverstärker
NO930523D0 (no) Skrukork
DE69316438D1 (de) Magnetoresistives Element
DE69332038D1 (de) Magnetowiderstandeffekt-Element
DE69126828D1 (de) Magnetoresistiver sensor
BR9406795A (pt) Transdutor
DE69412400D1 (de) Vorverstärkerschaltungsanordnungen
DE69416474D1 (de) Verstärker
EP0573149A3 (en) Improved magnetoresistive transducer
DE59303655D1 (de) Messwandler

Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee