[go: up one dir, main page]
More Web Proxy on the site http://driver.im/

DE69226847D1 - Datenverwaltungssystem für Halbleiterspeicher mit beschränkter Programmierung und I.C.-Speicherkarte mit solchem Datenverwaltungssystem - Google Patents

Datenverwaltungssystem für Halbleiterspeicher mit beschränkter Programmierung und I.C.-Speicherkarte mit solchem Datenverwaltungssystem

Info

Publication number
DE69226847D1
DE69226847D1 DE69226847T DE69226847T DE69226847D1 DE 69226847 D1 DE69226847 D1 DE 69226847D1 DE 69226847 T DE69226847 T DE 69226847T DE 69226847 T DE69226847 T DE 69226847T DE 69226847 D1 DE69226847 D1 DE 69226847D1
Authority
DE
Germany
Prior art keywords
management system
data management
semiconductor memory
memory card
limited programming
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE69226847T
Other languages
English (en)
Other versions
DE69226847T2 (de
Inventor
Noriyuki Matsui
Hiroyuki Itoh
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Application granted granted Critical
Publication of DE69226847D1 publication Critical patent/DE69226847D1/de
Publication of DE69226847T2 publication Critical patent/DE69226847T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G06—COMPUTING; CALCULATING OR COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F3/00—Input arrangements for transferring data to be processed into a form capable of being handled by the computer; Output arrangements for transferring data from processing unit to output unit, e.g. interface arrangements
    • G06F3/06—Digital input from, or digital output to, record carriers, e.g. RAID, emulated record carriers or networked record carriers
    • G06F3/0601—Interfaces specially adapted for storage systems
    • G06F3/0668—Interfaces specially adapted for storage systems adopting a particular infrastructure
    • G06F3/0671—In-line storage system
    • G06F3/0683—Plurality of storage devices
    • G06F3/0688—Non-volatile semiconductor memory arrays
    • G—PHYSICS
    • G06—COMPUTING; CALCULATING OR COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F3/00—Input arrangements for transferring data to be processed into a form capable of being handled by the computer; Output arrangements for transferring data from processing unit to output unit, e.g. interface arrangements
    • G06F3/06—Digital input from, or digital output to, record carriers, e.g. RAID, emulated record carriers or networked record carriers
    • G06F3/0601—Interfaces specially adapted for storage systems
    • G—PHYSICS
    • G06—COMPUTING; CALCULATING OR COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F3/00—Input arrangements for transferring data to be processed into a form capable of being handled by the computer; Output arrangements for transferring data from processing unit to output unit, e.g. interface arrangements
    • G06F3/06—Digital input from, or digital output to, record carriers, e.g. RAID, emulated record carriers or networked record carriers
    • G06F3/0601—Interfaces specially adapted for storage systems
    • G06F3/0602—Interfaces specially adapted for storage systems specifically adapted to achieve a particular effect
    • G06F3/0614—Improving the reliability of storage systems
    • G06F3/0616—Improving the reliability of storage systems in relation to life time, e.g. increasing Mean Time Between Failures [MTBF]
    • G—PHYSICS
    • G06—COMPUTING; CALCULATING OR COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F3/00—Input arrangements for transferring data to be processed into a form capable of being handled by the computer; Output arrangements for transferring data from processing unit to output unit, e.g. interface arrangements
    • G06F3/06—Digital input from, or digital output to, record carriers, e.g. RAID, emulated record carriers or networked record carriers
    • G06F3/0601—Interfaces specially adapted for storage systems
    • G06F3/0628—Interfaces specially adapted for storage systems making use of a particular technique
    • G06F3/0629—Configuration or reconfiguration of storage systems
    • G—PHYSICS
    • G06—COMPUTING; CALCULATING OR COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F3/00—Input arrangements for transferring data to be processed into a form capable of being handled by the computer; Output arrangements for transferring data from processing unit to output unit, e.g. interface arrangements
    • G06F3/06—Digital input from, or digital output to, record carriers, e.g. RAID, emulated record carriers or networked record carriers
    • G06F3/0601—Interfaces specially adapted for storage systems
    • G06F3/0628—Interfaces specially adapted for storage systems making use of a particular technique
    • G06F3/0646—Horizontal data movement in storage systems, i.e. moving data in between storage devices or systems
    • G06F3/0647—Migration mechanisms
    • G—PHYSICS
    • G06—COMPUTING; CALCULATING OR COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F3/00—Input arrangements for transferring data to be processed into a form capable of being handled by the computer; Output arrangements for transferring data from processing unit to output unit, e.g. interface arrangements
    • G06F3/06—Digital input from, or digital output to, record carriers, e.g. RAID, emulated record carriers or networked record carriers
    • G06F3/0601—Interfaces specially adapted for storage systems
    • G06F3/0628—Interfaces specially adapted for storage systems making use of a particular technique
    • G06F3/0653—Monitoring storage devices or systems
    • G—PHYSICS
    • G06—COMPUTING; CALCULATING OR COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F3/00—Input arrangements for transferring data to be processed into a form capable of being handled by the computer; Output arrangements for transferring data from processing unit to output unit, e.g. interface arrangements
    • G06F3/06—Digital input from, or digital output to, record carriers, e.g. RAID, emulated record carriers or networked record carriers
    • G06F3/0601—Interfaces specially adapted for storage systems
    • G06F3/0668—Interfaces specially adapted for storage systems adopting a particular infrastructure
    • G06F3/0671—In-line storage system
    • G06F3/0673—Single storage device
    • G06F3/0679—Non-volatile semiconductor memory device, e.g. flash memory, one time programmable memory [OTP]
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/10—Programming or data input circuits
    • G11C16/102—External programming circuits, e.g. EPROM programmers; In-circuit programming or reprogramming; EPROM emulators
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/34—Determination of programming status, e.g. threshold voltage, overprogramming or underprogramming, retention
    • G11C16/349—Arrangements for evaluating degradation, retention or wearout, e.g. by counting erase cycles
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/34—Determination of programming status, e.g. threshold voltage, overprogramming or underprogramming, retention
    • G11C16/349—Arrangements for evaluating degradation, retention or wearout, e.g. by counting erase cycles
    • G11C16/3495—Circuits or methods to detect or delay wearout of nonvolatile EPROM or EEPROM memory devices, e.g. by counting numbers of erase or reprogram cycles, by using multiple memory areas serially or cyclically
    • G—PHYSICS
    • G06—COMPUTING; CALCULATING OR COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F3/00—Input arrangements for transferring data to be processed into a form capable of being handled by the computer; Output arrangements for transferring data from processing unit to output unit, e.g. interface arrangements
    • G06F3/06—Digital input from, or digital output to, record carriers, e.g. RAID, emulated record carriers or networked record carriers
    • G06F3/0601—Interfaces specially adapted for storage systems
    • G06F3/0628—Interfaces specially adapted for storage systems making use of a particular technique
    • G06F3/0662—Virtualisation aspects
    • G06F3/0664—Virtualisation aspects at device level, e.g. emulation of a storage device or system

Landscapes

  • Engineering & Computer Science (AREA)
  • Theoretical Computer Science (AREA)
  • Human Computer Interaction (AREA)
  • Physics & Mathematics (AREA)
  • General Engineering & Computer Science (AREA)
  • General Physics & Mathematics (AREA)
  • Techniques For Improving Reliability Of Storages (AREA)
  • Read Only Memory (AREA)
  • Memory System (AREA)
DE69226847T 1991-11-28 1992-11-25 Datenverwaltungssystem für Halbleiterspeicher mit beschränkter Programmierung und I.C.-Speicherkarte mit solchem Datenverwaltungssystem Expired - Lifetime DE69226847T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP31446791A JPH05151097A (ja) 1991-11-28 1991-11-28 書換回数制限型メモリのデータ管理方式

Publications (2)

Publication Number Publication Date
DE69226847D1 true DE69226847D1 (de) 1998-10-08
DE69226847T2 DE69226847T2 (de) 1999-01-14

Family

ID=18053688

Family Applications (2)

Application Number Title Priority Date Filing Date
DE69233228T Expired - Lifetime DE69233228T2 (de) 1991-11-28 1992-11-25 Datenverwaltungssystem für Halbleiterspeicher mit beschränkter Programmierung und I.C. Speicherkarte mit solchem Datenverwaltungssystem
DE69226847T Expired - Lifetime DE69226847T2 (de) 1991-11-28 1992-11-25 Datenverwaltungssystem für Halbleiterspeicher mit beschränkter Programmierung und I.C.-Speicherkarte mit solchem Datenverwaltungssystem

Family Applications Before (1)

Application Number Title Priority Date Filing Date
DE69233228T Expired - Lifetime DE69233228T2 (de) 1991-11-28 1992-11-25 Datenverwaltungssystem für Halbleiterspeicher mit beschränkter Programmierung und I.C. Speicherkarte mit solchem Datenverwaltungssystem

Country Status (4)

Country Link
US (1) US5530827A (de)
EP (2) EP0544252B1 (de)
JP (1) JPH05151097A (de)
DE (2) DE69233228T2 (de)

Families Citing this family (79)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3407317B2 (ja) * 1991-11-28 2003-05-19 株式会社日立製作所 フラッシュメモリを使用した記憶装置
JP3587204B2 (ja) * 1991-11-28 2004-11-10 株式会社日立製作所 記憶装置
JP2610737B2 (ja) * 1991-12-20 1997-05-14 シャープ株式会社 記録再生装置
JPH05233426A (ja) * 1992-02-20 1993-09-10 Fujitsu Ltd フラッシュ・メモリ使用方法
JPH0750558B2 (ja) * 1992-09-22 1995-05-31 インターナショナル・ビジネス・マシーンズ・コーポレイション 一括消去型不揮発性メモリ
US5485595A (en) * 1993-03-26 1996-01-16 Cirrus Logic, Inc. Flash memory mass storage architecture incorporating wear leveling technique without using cam cells
JPH07219720A (ja) * 1993-10-01 1995-08-18 Hitachi Maxell Ltd 半導体メモリ装置ならびにその制御方法
JP3215237B2 (ja) * 1993-10-01 2001-10-02 富士通株式会社 記憶装置および記憶装置の書き込み／消去方法
JPH07153285A (ja) * 1993-11-29 1995-06-16 Sansei Denshi Japan Kk 不揮発性フラッシュメモリの制御方法とその装置
US6750908B1 (en) 1994-02-03 2004-06-15 Canon Kabushiki Kaisha Image processing apparatus using recording medium which needs data erasing processing before recording of data
DE69535301T2 (de) * 1994-02-23 2007-05-31 Canon K.K. Datenverarbeitungsgerät mit Speichermedium, das ein Löschverfahren benötigt, bevor Daten darauf gespeichert werden können
JP3784844B2 (ja) * 1994-03-30 2006-06-14 沖電気工業株式会社 半導体記憶装置
JPH0896588A (ja) * 1994-09-28 1996-04-12 Nec Corp 半導体記憶装置
US6081878A (en) 1997-03-31 2000-06-27 Lexar Media, Inc. Increasing the memory performance of flash memory devices by writing sectors simultaneously to multiple flash memory devices
US6757800B1 (en) 1995-07-31 2004-06-29 Lexar Media, Inc. Increasing the memory performance of flash memory devices by writing sectors simultaneously to multiple flash memory devices
US5930815A (en) * 1995-07-31 1999-07-27 Lexar Media, Inc. Moving sequential sectors within a block of information in a flash memory mass storage architecture
US8171203B2 (en) 1995-07-31 2012-05-01 Micron Technology, Inc. Faster write operations to nonvolatile memory using FSInfo sector manipulation
US5845313A (en) 1995-07-31 1998-12-01 Lexar Direct logical block addressing flash memory mass storage architecture
US6801979B1 (en) 1995-07-31 2004-10-05 Lexar Media, Inc. Method and apparatus for memory control circuit
US6728851B1 (en) 1995-07-31 2004-04-27 Lexar Media, Inc. Increasing the memory performance of flash memory devices by writing sectors simultaneously to multiple flash memory devices
US6978342B1 (en) 1995-07-31 2005-12-20 Lexar Media, Inc. Moving sectors within a block of information in a flash memory mass storage architecture
US5907856A (en) * 1995-07-31 1999-05-25 Lexar Media, Inc. Moving sectors within a block of information in a flash memory mass storage architecture
US5838614A (en) 1995-07-31 1998-11-17 Lexar Microsystems, Inc. Identification and verification of a sector within a block of mass storage flash memory
US6125435A (en) * 1995-09-13 2000-09-26 Lexar Media, Inc. Alignment of cluster address to block addresses within a semiconductor non-volatile mass storage memory
US5835935A (en) * 1995-09-13 1998-11-10 Lexar Media, Inc. Method of and architecture for controlling system data with automatic wear leveling in a semiconductor non-volatile mass storage memory
GB2291991A (en) * 1995-09-27 1996-02-07 Memory Corp Plc Disk drive emulation with a block-erasable memory
FR2742893B1 (fr) * 1995-12-20 1998-01-16 Schlumberger Ind Sa Procede d'inscription d'une donnee dans une memoire reinscriptible
JP2848300B2 (ja) * 1995-12-27 1999-01-20 日本電気株式会社 不揮発性半導体記憶装置
US5956473A (en) * 1996-11-25 1999-09-21 Macronix International Co., Ltd. Method and system for managing a flash memory mass storage system
US5928370A (en) * 1997-02-05 1999-07-27 Lexar Media, Inc. Method and apparatus for verifying erasure of memory blocks within a non-volatile memory structure
US6122195A (en) * 1997-03-31 2000-09-19 Lexar Media, Inc. Method and apparatus for decreasing block write operation times performed on nonvolatile memory
US6411546B1 (en) 1997-03-31 2002-06-25 Lexar Media, Inc. Nonvolatile memory using flexible erasing methods and method and system for using same
US6034897A (en) * 1999-04-01 2000-03-07 Lexar Media, Inc. Space management for managing high capacity nonvolatile memory
US5930826A (en) * 1997-04-07 1999-07-27 Aplus Integrated Circuits, Inc. Flash memory protection attribute status bits held in a flash memory array
DE19718479C1 (de) * 1997-04-30 1998-09-24 Siemens Ag Chipkarte mit Speicherzugriffsmaximierung und Protokollierung
US6076137A (en) 1997-12-11 2000-06-13 Lexar Media, Inc. Method and apparatus for storing location identification information within non-volatile memory devices
GB9801373D0 (en) 1998-01-22 1998-03-18 Memory Corp Plc Memory system
US6374337B1 (en) 1998-11-17 2002-04-16 Lexar Media, Inc. Data pipelining method and apparatus for memory control circuit
FR2787601A1 (fr) * 1998-12-22 2000-06-23 Gemplus Card Int Systeme de memorisation comprenant des moyens de gestion d'une memoire avec anti-usure et procede de gestion anti-usure d'une memoire
US6141249A (en) * 1999-04-01 2000-10-31 Lexar Media, Inc. Organization of blocks within a nonvolatile memory unit to effectively decrease sector write operation time
WO2000060605A1 (en) 1999-04-01 2000-10-12 Lexar Media, Inc. Space management for managing high capacity nonvolatile memory
US6426893B1 (en) 2000-02-17 2002-07-30 Sandisk Corporation Flash eeprom system with simultaneous multiple data sector programming and storage of physical block characteristics in other designated blocks
US6567307B1 (en) 2000-07-21 2003-05-20 Lexar Media, Inc. Block management for mass storage
US7167944B1 (en) 2000-07-21 2007-01-23 Lexar Media, Inc. Block management for mass storage
JP2002351685A (ja) * 2001-05-22 2002-12-06 Sankyo Seiki Mfg Co Ltd 不揮発性メモリのデータ更新方法及び制御装置
GB0123415D0 (en) 2001-09-28 2001-11-21 Memquest Ltd Method of writing data to non-volatile memory
GB0123412D0 (en) 2001-09-28 2001-11-21 Memquest Ltd Memory system sectors
GB0123416D0 (en) 2001-09-28 2001-11-21 Memquest Ltd Non-volatile memory control
GB0123421D0 (en) 2001-09-28 2001-11-21 Memquest Ltd Power management system
GB0123410D0 (en) 2001-09-28 2001-11-21 Memquest Ltd Memory system for data storage and retrieval
US7231643B1 (en) 2002-02-22 2007-06-12 Lexar Media, Inc. Image rescue system including direct communication between an application program and a device driver
US20030204857A1 (en) * 2002-04-29 2003-10-30 Dinwiddie Aaron Hal Pre-power -failure storage of television parameters in nonvolatile memory
US7321959B2 (en) * 2002-10-02 2008-01-22 Matsushita Electric Industrial Co., Ltd. Control method of a non-volatile memory apparatus
EP1556868B1 (de) 2002-10-28 2007-09-05 SanDisk Corporation Automatischer abnutzungsausgleich in einem nicht-flüchtigen speichersystem
EP1713085A1 (de) * 2002-10-28 2006-10-18 SanDisk Corporation Automatischer Abnutzungsausgleich in nichtflüchtigen Speichersystemen
DE10315189B4 (de) * 2003-04-03 2016-09-15 Robert Bosch Gmbh Verfahren zur Bestimmung der Anzahl durchgeführter Löschvorgänge eines Speicherblocks einer Speichereinrichtung
JP4327503B2 (ja) * 2003-05-28 2009-09-09 富士通株式会社 ハードディスクの制御方法及び制御装置
US20050041453A1 (en) * 2003-08-22 2005-02-24 Brazis Paul W. Method and apparatus for reading and writing to solid-state memory
US7480760B2 (en) * 2003-12-17 2009-01-20 Wegener Communications, Inc. Rotational use of memory to minimize write cycles
US7725628B1 (en) 2004-04-20 2010-05-25 Lexar Media, Inc. Direct secondary device interface by a host
US7370166B1 (en) 2004-04-30 2008-05-06 Lexar Media, Inc. Secure portable storage device
DE102004037785A1 (de) * 2004-08-03 2006-03-16 Endress + Hauser Gmbh + Co. Kg Feldgerät für die Automatisierungstechnik
US7594063B1 (en) 2004-08-27 2009-09-22 Lexar Media, Inc. Storage capacity status
US7464306B1 (en) 2004-08-27 2008-12-09 Lexar Media, Inc. Status of overall health of nonvolatile memory
JP2007280443A (ja) * 2006-04-03 2007-10-25 Fuji Xerox Co Ltd データ処理装置およびデータ処理方法とプログラム
JP4804218B2 (ja) * 2006-05-11 2011-11-02 株式会社日立製作所 記憶媒体への書き込み回数を管理する計算機システム及びその制御方法
JP2008015769A (ja) 2006-07-05 2008-01-24 Hitachi Ltd ストレージシステム及び書き込み分散方法
US9153337B2 (en) 2006-12-11 2015-10-06 Marvell World Trade Ltd. Fatigue management system and method for hybrid nonvolatile solid state memory system
US20080140918A1 (en) * 2006-12-11 2008-06-12 Pantas Sutardja Hybrid non-volatile solid state memory system
US7515500B2 (en) * 2006-12-20 2009-04-07 Nokia Corporation Memory device performance enhancement through pre-erase mechanism
TWI368224B (en) * 2007-03-19 2012-07-11 A Data Technology Co Ltd Wear-leveling management and file distribution management of hybrid density memory
US9406388B2 (en) * 2007-05-10 2016-08-02 Micron Technology, Inc. Memory area protection system and methods
WO2009153679A1 (en) 2008-06-17 2009-12-23 Nxp B.V. Method of and system for controlling the programming of memory devices
JP5192352B2 (ja) * 2008-10-30 2013-05-08 株式会社日立製作所 記憶装置及びデータ格納領域管理方法
JP2011198409A (ja) * 2010-03-19 2011-10-06 Toshiba Information Systems (Japan) Corp 不揮発性メモリ
FR2959586B1 (fr) * 2010-04-30 2012-06-22 Proton World Int Nv Procede d'ecriture et de lecture dans une memoire d'atomicite
JP5722685B2 (ja) 2011-04-12 2015-05-27 株式会社日立製作所 半導体装置、不揮発性メモリ装置の制御方法
JP5569469B2 (ja) * 2011-05-25 2014-08-13 株式会社デンソー 電子機器
JP5787095B2 (ja) * 2012-03-01 2015-09-30 株式会社デンソー 不揮発性メモリへのデータ記憶方法

Family Cites Families (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58215794A (ja) * 1982-06-08 1983-12-15 Toshiba Corp 不揮発性メモリ装置
JPS59162695A (ja) * 1983-03-07 1984-09-13 Nec Corp 記憶装置
JPS618798A (ja) * 1984-06-21 1986-01-16 Nec Corp 不揮発性記憶装置
US4758988A (en) * 1985-12-12 1988-07-19 Motorola, Inc. Dual array EEPROM for high endurance capability
JP2685173B2 (ja) * 1986-05-31 1997-12-03 キヤノン株式会社 メモリ書き込み制御方法
EP0617363B1 (de) * 1989-04-13 2000-01-26 SanDisk Corporation Austausch von fehlerhaften Speicherzellen einer EEprommatritze
EP0398545A1 (de) * 1989-05-19 1990-11-22 Delco Electronics Corporation Verfahren und Vorrichtung zur Datenspeicherung in einem nichtflüchtigen Speicher
US5148481A (en) * 1989-10-06 1992-09-15 International Business Machines Corporation Transaction system security method and apparatus
US5206944A (en) * 1990-06-07 1993-04-27 The United States Of America As Represented By The Secretary Of The Air Force High speed analog to digital converter board for an IBM PC/AT
US5303198A (en) * 1990-09-28 1994-04-12 Fuji Photo Film Co., Ltd. Method of recording data in memory card having EEPROM and memory card system using the same
EP0492450B1 (de) * 1990-12-25 2002-08-28 Fuji Photo Film Co., Ltd. Speicherkarte mit EEPROM
GB2251324B (en) * 1990-12-31 1995-05-10 Intel Corp File structure for a non-volatile semiconductor memory
GB2251323B (en) * 1990-12-31 1994-10-12 Intel Corp Disk emulation for a non-volatile semiconductor memory
US5249158A (en) * 1991-02-11 1993-09-28 Intel Corporation Flash memory blocking architecture
US5295255A (en) * 1991-02-22 1994-03-15 Electronic Professional Services, Inc. Method and apparatus for programming a solid state processor with overleaved array memory modules
JP2582487B2 (ja) * 1991-07-12 1997-02-19 インターナショナル・ビジネス・マシーンズ・コーポレイション 半導体メモリを用いた外部記憶システム及びその制御方法

Also Published As

Publication number Publication date
EP0686976B1 (de) 2003-10-08
DE69226847T2 (de) 1999-01-14
DE69233228D1 (de) 2003-11-13
EP0686976A3 (de) 1996-11-27
US5530827A (en) 1996-06-25
DE69233228T2 (de) 2004-07-01
JPH05151097A (ja) 1993-06-18
EP0544252A3 (en) 1993-09-08
EP0544252B1 (de) 1998-09-02
EP0544252A2 (de) 1993-06-02
EP0686976A2 (de) 1995-12-13

Similar Documents

Publication Publication Date Title
DE69233228D1 (de) Datenverwaltungssystem für Halbleiterspeicher mit beschränkter Programmierung und I.C. Speicherkarte mit solchem Datenverwaltungssystem
DE3587960D1 (de) Datenverarbeitungsanlage mit einem Speicherzugriffssteuergerät.
DE3887109D1 (de) Halbleiterspeichervorrichtung mit einer gleichzeitigen Löschfunktion für einen Teil der Speicherdaten.
DE68923828D1 (de) Architektur und Schnittstelle für Speicherkarten.
FI953204A0 (fi) Datamuistin jakaminen moniprosessorijärjestelmissä
DE69018253D1 (de) IC Speicherkarte.
DE69715203D1 (de) Ein Datenverarbeitungssystem mit cc-NUMA (cache coherent, non-uniform memory access) Architektur und im lokalen Speicher enthaltenem Cache-Speicher für Fernzugriff
DE69418921D1 (de) Datenverwaltung für IC-Karten
KR910015864A (ko) 데이타를 원격 태그로부터 읽고 쓰는 고속 시스템
DE68920462D1 (de) On-line-Problemverwaltung für Datenverarbeitungssysteme.
DE69230516D1 (de) Tragfutteral für elektronische Speicherkarte
DE69013250D1 (de) Leseanordnung für eine Halbleiterspeicheranordnung.
DE69427070D1 (de) Dateiverwaltungssystem für eine Speicherkarte
EP0640982A3 (de) Nichtflüchtige Halbleiterspeicheranordnung und Datenprogrammierverfahren.
DE68923942D1 (de) Nichtflüchtiges Halbleiterspeichersystem.
DE3483489D1 (de) Speicherzugriffseinrichtung in einem datenverarbeitungssystem.
DE3177270D1 (de) Halbleiterspeicher mit datenprogrammierzeit.
DE69226853D1 (de) Aufnahme- und Wiedergabeanordnung mit einer Block-löschbaren nichtflüchtigen Halbleiterspeicheranordnung für einen Block von spezifischen Datengruppen
ITMI932712A0 (it) Dispositivo di memoria a semiconduttore con disposizione di bit di dati di ingresso / uscita cambiale.
DE69214702D1 (de) Speicherzugriff für die Datenübertragung in einer Ein-Ausgabevorrichtung
DE69022644D1 (de) Steuerschaltung für den Datenausgang für eine Halbleiterspeicheranordnung.
EP0597722A3 (de) Datenlöschverfahren in einem nicht-flüchtigen Halbleiterspeicher.
DE68920233D1 (de) Steuerschaltung für eine Halbleiterspeicheranordnung und Halbleiterspeichersystem.
DE69022475D1 (de) Halbleiterspeichereinrichtung mit hoher Datenlesegeschwindigkeit.
DE68919402D1 (de) Speicherkarte.

Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8328 Change in the person/name/address of the agent

Representative=s name: SEEGER SEEGER LINDNER PARTNERSCHAFT PATENTANWAELTE