DE69124310D1 - Halbleiter-Speichereinrichtung mit Strom-Spannungs-Wandler - Google Patents

Halbleiter-Speichereinrichtung mit Strom-Spannungs-Wandler

Info

Publication number: DE69124310D1
Authority: DE; Germany
Prior art keywords: current; memory device; semiconductor memory; voltage converter; converter
Prior art date: 1990-07-13
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.): Expired - Fee Related

Application number

DE69124310T

Other languages

English (en)

Other versions

DE69124310T2 (de

Inventor

Hideki Arakawa

Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)

Sony Corp

Original Assignee

Sony Corp

Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)

1990-07-13

Filing date

1991-07-12

Publication date

1997-03-06

1991-07-12 Application filed by Sony Corp filed Critical Sony Corp

1997-03-06 Application granted granted Critical

1997-03-06 Publication of DE69124310D1 publication Critical patent/DE69124310D1/de

1997-08-14 Publication of DE69124310T2 publication Critical patent/DE69124310T2/de

2011-07-13 Anticipated expiration legal-status Critical

Status Expired - Fee Related legal-status Critical Current

Classifications

- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
- G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
- G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
- G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
- G11C7/06—Sense amplifiers; Associated circuits, e.g. timing or triggering circuits
- G11C7/067—Single-ended amplifiers
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/06—Auxiliary circuits, e.g. for writing into memory
- G11C16/26—Sensing or reading circuits; Data output circuits

Landscapes

Engineering & Computer Science (AREA)
Microelectronics & Electronic Packaging (AREA)
Computer Hardware Design (AREA)
Read Only Memory (AREA)

DE69124310T 1990-07-13 1991-07-12 Halbleiter-Speichereinrichtung mit Strom-Spannungs-Wandler Expired - Fee Related DE69124310T2 (de)

Applications Claiming Priority (1)

Application Number	Priority Date	Filing Date	Title
JP2184039A JPH0478097A (ja)	1990-07-13	1990-07-13	メモリ装置

Publications (2)

Publication Number	Publication Date
DE69124310D1 true DE69124310D1 (de)	1997-03-06
DE69124310T2 DE69124310T2 (de)	1997-08-14

Family

ID=16146292

Family Applications (1)

Application Number	Title	Priority Date	Filing Date
DE69124310T Expired - Fee Related DE69124310T2 (de)	1990-07-13	1991-07-12	Halbleiter-Speichereinrichtung mit Strom-Spannungs-Wandler

Country Status (5)

Country	Link
US (1)	US5388078A (de)
EP (1)	EP0470394B1 (de)
JP (1)	JPH0478097A (de)
KR (1)	KR0183999B1 (de)
DE (1)	DE69124310T2 (de)

Families Citing this family (14)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
JP3152762B2 (ja) *	1992-10-06	2001-04-03	富士通株式会社	不揮発性半導体記憶装置
US5528541A (en) *	1994-11-09	1996-06-18	Sony Corporation Of Japan	Charge shared precharge scheme to reduce compare output delays
KR0140161B1 (ko) *	1994-12-29	1998-07-15	김주용	메모리 셀의 검출 및 확인 겸용회로
US6108237A (en) *	1997-07-17	2000-08-22	Micron Technology, Inc.	Fast-sensing amplifier for flash memory
JPH11503853A (ja) *	1995-02-10	1999-03-30	マイクロン・テクノロジー・インコーポレーテッド	フラッシュ・メモリ用の高速検知増幅器
JP3919879B2 (ja) *	1997-05-16	2007-05-30	株式会社ルネサステクノロジ	メモリ装置
KR20010040274A (ko) *	1998-09-21	2001-05-15	롤페스 요하네스 게라투스 알베르투스	증폭기
US6535026B2 (en) *	2001-04-30	2003-03-18	Macronix International Co., Ltd.	High-speed sense amplifier with auto-shutdown precharge path
US6608787B1 (en) *	2002-04-11	2003-08-19	Atmel Corporation	Single-ended current sense amplifier
US7203096B2 (en) *	2005-06-30	2007-04-10	Infineon Technologies Flash Gmbh & Co. Kg	Method and apparatus for sensing a state of a memory cell
JP2007133927A (ja) *	2005-11-08	2007-05-31	Toshiba Corp	半導体記憶装置及びその制御方法
US7733704B2 (en) *	2005-12-29	2010-06-08	Sandisk Corporation	Non-volatile memory with power-saving multi-pass sensing
KR100825788B1 (ko) *	2006-10-31	2008-04-28	삼성전자주식회사	메모리 셀 센싱 이전에 비트라인의 프리차아지 전압 레벨을유지할 수 있는 플래쉬 메모리 장치의 센스 앰프 회로 및플래쉬 메모리 셀 센싱 방법
CN101800082B (zh) *	2009-02-11	2012-12-05	北京兆易创新科技有限公司	一种用于mlc闪存的灵敏放大器和电流电压转换电路

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
US4488265A (en) *	1982-06-30	1984-12-11	Ibm Corporation	Integrated dynamic RAM and ROS
US4785424A (en) *	1986-05-27	1988-11-15	Seeq Technology, Inc.	Apparatus for page mode programming of an EEPROM cell array with false loading protection
JPH0758592B2 (ja) *	1987-11-30	1995-06-21	日本電気株式会社	半導体メモリ
US5022006A (en) *	1988-04-01	1991-06-04	International Business Machines Corporation	Semiconductor memory having bit lines with isolation circuits connected between redundant and normal memory cells
GB8907045D0 (en) *	1989-03-29	1989-05-10	Hughes Microelectronics Ltd	Sense amplifier
JP2830066B2 (ja) *	1989-05-25	1998-12-02	ソニー株式会社	半導体メモリ
JPH0814996B2 (ja) *	1989-06-27	1996-02-14	株式会社東芝	半導体記憶装置
KR930008311B1 (ko) *	1990-12-28	1993-08-27	삼성전자 주식회사	센스 앰프의 출력 제어회로
US5187392A (en) *	1991-07-31	1993-02-16	Intel Corporation	Programmable logic device with limited signal swing

1990
- 1990-07-13 JP JP2184039A patent/JPH0478097A/ja active Pending
1991
- 1991-07-11 KR KR1019910011745A patent/KR0183999B1/ko not_active IP Right Cessation
- 1991-07-12 US US07/729,442 patent/US5388078A/en not_active Expired - Lifetime
- 1991-07-12 EP EP91111700A patent/EP0470394B1/de not_active Expired - Lifetime
- 1991-07-12 DE DE69124310T patent/DE69124310T2/de not_active Expired - Fee Related

Also Published As

Publication number	Publication date
KR920003311A (ko)	1992-02-29
DE69124310T2 (de)	1997-08-14
EP0470394B1 (de)	1997-01-22
US5388078A (en)	1995-02-07
JPH0478097A (ja)	1992-03-12
EP0470394A1 (de)	1992-02-12
KR0183999B1 (ko)	1999-04-15

Publication	Publication Date	Title
DE69132121D1 (de)	2000-05-25	Halbleiterspeichervorrichtung
DE69228905D1 (de)	1999-05-20	Halbleiterspeichergerät
DE69332191D1 (de)	2002-09-12	Halbleiteranordnung mit Überchipanschlüssen
DE69133361D1 (de)	2004-03-18	Halbleiterspeichervorrichtung
DE69132284D1 (de)	2000-08-10	Halbleiterspeicheranordnung
DE69224315D1 (de)	1998-03-12	Halbleiterspeichervorrichtung
DE69123666D1 (de)	1997-01-30	Halbleiterspeicheranordnung
DE59205881D1 (de)	1996-05-02	Integrierter halbleiterspeicher mit redundanzeinrichtung
DE69125671D1 (de)	1997-05-22	Halbleiter-Speicherbauteil
DE69125206D1 (de)	1997-04-24	Halbleiterspeicheranordnung
DE69123379D1 (de)	1997-01-16	Halbleiterspeichervorrichtung
DE69121801D1 (de)	1996-10-10	Halbleiterspeicheranordnung
DE69127155D1 (de)	1997-09-11	Halbleiterspeicheranordnung
DE69125535D1 (de)	1997-05-15	Halbleiterspeicheranordnung
DE69224245D1 (de)	1998-03-05	Halbleiter-Speichereinrichtung
DE69329011D1 (de)	2000-08-17	Halbleiterspeichergerät mit Prüfmodus
DE69126559D1 (de)	1997-07-24	Halbleiterspeicheranordnung
DE69124310D1 (de)	1997-03-06	Halbleiter-Speichereinrichtung mit Strom-Spannungs-Wandler
DE69220101D1 (de)	1997-07-10	Halbleiterspeichereinrichtung
DE69128061D1 (de)	1997-12-04	Halbleiterspeicheranordnung
DE69125339D1 (de)	1997-04-30	Halbleiterspeicheranordnung
DE69219518D1 (de)	1997-06-12	Halbleiterspeicheranordnung
DE69128819D1 (de)	1998-03-05	Halbleiterspeicheranordnung
DE69223333D1 (de)	1998-01-15	Halbleiterspeicheranordnung
DE69222793D1 (de)	1997-11-27	Halbleiterspeicheranordnung

Legal Events

Date	Code	Title	Description
1998-02-19	8364	No opposition during term of opposition
2003-05-15	8339	Ceased/non-payment of the annual fee