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DE69022743D1 - Verfahren zur hydrothermalen herstellung von einkristallen mit optischer qualität. - Google Patents

Verfahren zur hydrothermalen herstellung von einkristallen mit optischer qualität.

Info

Publication number
DE69022743D1
DE69022743D1 DE69022743T DE69022743T DE69022743D1 DE 69022743 D1 DE69022743 D1 DE 69022743D1 DE 69022743 T DE69022743 T DE 69022743T DE 69022743 T DE69022743 T DE 69022743T DE 69022743 D1 DE69022743 D1 DE 69022743D1
Authority
DE
Germany
Prior art keywords
single crystals
optical quality
hydrothermal production
hydrothermal
production
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE69022743T
Other languages
English (en)
Other versions
DE69022743T2 (de
Inventor
August Ferretti
Thurman Gier
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
EIDP Inc
Original Assignee
EI Du Pont de Nemours and Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by EI Du Pont de Nemours and Co filed Critical EI Du Pont de Nemours and Co
Application granted granted Critical
Publication of DE69022743D1 publication Critical patent/DE69022743D1/de
Publication of DE69022743T2 publication Critical patent/DE69022743T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/16—Oxides
    • C30B29/22—Complex oxides
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/14—Phosphates
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B7/00—Single-crystal growth from solutions using solvents which are liquid at normal temperature, e.g. aqueous solutions
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10S117/918—Single-crystal waveguide

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
DE69022743T 1990-01-05 1990-12-20 Verfahren zur hydrothermalen herstellung von einkristallen mit optischer qualität. Expired - Lifetime DE69022743T2 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US07/461,562 US5066356A (en) 1990-01-05 1990-01-05 Hydrothermal process for growing optical-quality single crystals
PCT/US1990/007357 WO1991009993A1 (en) 1990-01-05 1990-12-20 Hydrothermal process for growing optical-quality single crystals

Publications (2)

Publication Number Publication Date
DE69022743D1 true DE69022743D1 (de) 1995-11-02
DE69022743T2 DE69022743T2 (de) 1997-04-24

Family

ID=23833073

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69022743T Expired - Lifetime DE69022743T2 (de) 1990-01-05 1990-12-20 Verfahren zur hydrothermalen herstellung von einkristallen mit optischer qualität.

Country Status (6)

Country Link
US (1) US5066356A (de)
EP (1) EP0509060B1 (de)
JP (1) JP3289895B2 (de)
AU (1) AU7306891A (de)
DE (1) DE69022743T2 (de)
WO (1) WO1991009993A1 (de)

Families Citing this family (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5281405A (en) * 1992-02-19 1994-01-25 E. I. Du Pont De Nemours And Company Optically useful compositions and a sol-gel process for their production
US5264073A (en) * 1992-02-28 1993-11-23 E. I. Du Pont De Nemours And Company Hydrothermal process for growing optical-quality single crystals and aqueous mineralizer therefor
US5326423A (en) * 1992-03-25 1994-07-05 E. I. Du Pont De Nemours And Company Doped crystalline titanyl arsenates and preparation thereof
JP3289905B2 (ja) * 1992-03-31 2002-06-10 イー・アイ・デユポン・ドウ・ヌムール・アンド・カンパニー 光学品質結晶の損傷感受性を減少させる方法
JPH0664995A (ja) * 1992-05-15 1994-03-08 Sony Corp ＫＴｉＯＰＯ４ 単結晶及びその製造方法
US5350961A (en) * 1992-07-31 1994-09-27 E. I. Du Pont De Nemours And Company Acoustic wave devices for controlling high frequency signals
DE69407809D1 (de) * 1993-10-08 1998-02-12 Du Pont Akustische frequenzmischvorrichtungen, die kaliumtitanylphosphat und seine äquivalente verwenden
US5418866A (en) * 1993-10-08 1995-05-23 E. I. Du Pont De Nemours And Company Surface acoustic wave devices for controlling high frequency signals using modified crystalline materials
US5448125A (en) * 1994-06-27 1995-09-05 E. I. Du Pont De Nemours And Company Surface skimming bulk wave generation in KTiOPO4 and its analogs
US7317859B2 (en) * 2004-08-25 2008-01-08 Advanced Photonics Crystals Periodically poled optical crystals and process for the production thereof
CN1308502C (zh) * 2005-01-11 2007-04-04 桂林矿产地质研究院 非线性光学晶体Nb:KTP的合成方法
US9506166B1 (en) 2010-07-08 2016-11-29 Clemson University Research Foundation Method for forming heterogeneous single garnet based crystals for passive Q-switched lasers and microlasers
US9493887B1 (en) 2010-07-08 2016-11-15 Clemson University Research Foundation Heterogeneous single vanadate based crystals for Q-switched lasers and microlasers and method for forming same
US9014228B1 (en) 2010-07-08 2015-04-21 Clemson University Research Foundation Hydrothermal growth of heterogeneous single crystals for solid state laser applications
US9711928B2 (en) 2012-06-22 2017-07-18 Clemson University Research Foundation Single crystals with internal doping with laser ions prepared by a hydrothermal method
US9469915B2 (en) 2012-06-22 2016-10-18 Clemson University Research Foundation Hydrothermal growth of heterogeneous single crystals exhibiting amplified spontaneous emission suppression
CN103305899A (zh) * 2013-06-19 2013-09-18 中国有色桂林矿产地质研究院有限公司 一种水热法生长大尺寸砷酸钛氧钾体单晶的方法
US10156025B2 (en) 2015-05-04 2018-12-18 University Of South Carolina Monolithic heterogeneous single crystals with multiple regimes for solid state laser applications

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3949323A (en) * 1974-03-14 1976-04-06 E. I. Du Pont De Nemours & Company Crystals of (K, Rb, NH4)TiO(P, As)O4 and their use in electrooptic devices
JPS565400A (en) * 1979-06-18 1981-01-20 Du Pont Crystal growth of ktiopo4 and its analogue compound
US4305778A (en) * 1979-06-18 1981-12-15 E. I. Du Pont De Nemours And Company Hydrothermal process for growing a single crystal with an aqueous mineralizer
FR2585345B1 (fr) * 1985-07-26 1989-08-18 Centre Nat Rech Scient Procede de synthese en flux de cristaux du type du ktiopo4 ou monophosphate de potassium et de titanyle
FR2609976B2 (fr) * 1985-07-26 1989-11-03 Centre Nat Rech Scient Syntheses en flux de cristaux et epitaxies de solutions solides isotypes de ktiopo4
US4654111A (en) * 1985-12-02 1987-03-31 At&T Laboratories Hydrothermal growth of potassium titanyl phosphate
US4761202A (en) * 1986-05-30 1988-08-02 U.S. Philips Corporation Process for crystal growth of KTiOPO4 from solution
US4740265A (en) * 1987-01-08 1988-04-26 E. I. Du Pont De Nemours And Company Process for producing an optical waveguide and the product therefrom
US4766954A (en) * 1987-01-08 1988-08-30 E. I. Du Pont De Nemours And Company Process for producing an optical waveguide

Also Published As

Publication number Publication date
EP0509060A1 (de) 1992-10-21
EP0509060B1 (de) 1995-09-27
WO1991009993A1 (en) 1991-07-11
DE69022743T2 (de) 1997-04-24
JPH05503501A (ja) 1993-06-10
JP3289895B2 (ja) 2002-06-10
AU7306891A (en) 1991-07-24
US5066356A (en) 1991-11-19

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Legal Events

Date Code Title Description
8332 No legal effect for de
8370 Indication of lapse of patent is to be deleted