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DE69019698D1 - MOS-Bauteile mit einer verbesserten elektrischen Anpassung. - Google Patents

MOS-Bauteile mit einer verbesserten elektrischen Anpassung.

Info

Publication number
DE69019698D1
DE69019698D1 DE69019698T DE69019698T DE69019698D1 DE 69019698 D1 DE69019698 D1 DE 69019698D1 DE 69019698 T DE69019698 T DE 69019698T DE 69019698 T DE69019698 T DE 69019698T DE 69019698 D1 DE69019698 D1 DE 69019698D1
Authority
DE
Germany
Prior art keywords
improved electrical
mos components
electrical adaptation
adaptation
mos
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE69019698T
Other languages
English (en)
Other versions
DE69019698T2 (de
Inventor
Thaddeus John Gabara
Peter C Metz
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
AT&T Corp
Original Assignee
AT&T Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by AT&T Corp filed Critical AT&T Corp
Publication of DE69019698D1 publication Critical patent/DE69019698D1/de
Application granted granted Critical
Publication of DE69019698T2 publication Critical patent/DE69019698T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H01L27/088—
    • H01L27/0203—
    • H01L27/11898—
DE1990619698 1989-12-22 1990-11-23 MOS-Bauteile mit einer verbesserten elektrischen Anpassung. Expired - Lifetime DE69019698T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US45600889A 1989-12-22 1989-12-22

Publications (2)

Publication Number Publication Date
DE69019698D1 true DE69019698D1 (de) 1995-06-29
DE69019698T2 DE69019698T2 (de) 1995-11-23

Family

ID=23811073

Family Applications (1)

Application Number Title Priority Date Filing Date
DE1990619698 Expired - Lifetime DE69019698T2 (de) 1989-12-22 1990-11-23 MOS-Bauteile mit einer verbesserten elektrischen Anpassung.

Country Status (3)

Country Link
EP (1) EP0434234B1 (de)
JP (1) JP3199387B2 (de)
DE (1) DE69019698T2 (de)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW281798B (en) * 1996-03-16 1996-07-21 Winbond Electronics Corp Hexagon transistor element
US5838050A (en) * 1996-06-19 1998-11-17 Winbond Electronics Corp. Hexagon CMOS device
DE19750992A1 (de) * 1997-11-18 1999-06-02 Bosch Gmbh Robert Halbleiterbauelement
DE10223179B4 (de) * 2002-05-24 2006-06-01 Infineon Technologies Ag Widerstandsbauelement und Verfahren zum Betreiben des Widerstandsbauelements
JP4602908B2 (ja) * 2006-01-10 2010-12-22 シャープ株式会社 半導体装置
CN101452742B (zh) * 2007-12-07 2011-10-05 中芯国际集成电路制造(上海)有限公司 改善sram匹配度的方法
DE102010001788A1 (de) * 2010-02-10 2011-08-11 Forschungsverbund Berlin e.V., 12489 Skalierbarer Aufbau für laterale Halbleiterbauelemente mit hoher Stromtragfähigkeit

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS53141583A (en) * 1977-05-16 1978-12-09 Nec Corp Integrated-circuit semiconductor device of field effect type
JPS5669865A (en) * 1979-11-12 1981-06-11 Mitsubishi Electric Corp Field-effect type transistor
JPS58207677A (ja) * 1982-05-28 1983-12-03 Nec Ic Microcomput Syst Ltd ペアｍｏｓトランジスタの製造方法
JPS60144963A (ja) * 1984-01-09 1985-07-31 Nec Corp Ｍｉｓ型半導体集積回路
US4684967A (en) * 1984-05-04 1987-08-04 Integrated Logic Systems, Inc. Low capacitance transistor cell element and transistor array
JPS61147573A (ja) * 1984-12-21 1986-07-05 Hitachi Ltd 薄膜トランジスタアレイ
JPS61154156A (ja) * 1984-12-27 1986-07-12 Nec Corp 半導体集積回路
US4757029A (en) * 1987-05-04 1988-07-12 Motorola Inc. Method of making vertical field effect transistor with plurality of gate input cnnections
JP2550375B2 (ja) * 1987-12-28 1996-11-06 株式会社日立製作所 半導体装置

Also Published As

Publication number Publication date
JPH03290959A (ja) 1991-12-20
EP0434234B1 (de) 1995-05-24
EP0434234A3 (en) 1991-08-14
DE69019698T2 (de) 1995-11-23
EP0434234A2 (de) 1991-06-26
JP3199387B2 (ja) 2001-08-20

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition