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DE69018690D1 - Verfahren zur Herstellung einer EPROM-Zellen-Matrize. - Google Patents

Verfahren zur Herstellung einer EPROM-Zellen-Matrize.

Info

Publication number
DE69018690D1
DE69018690D1 DE69018690T DE69018690T DE69018690D1 DE 69018690 D1 DE69018690 D1 DE 69018690D1 DE 69018690 T DE69018690 T DE 69018690T DE 69018690 T DE69018690 T DE 69018690T DE 69018690 D1 DE69018690 D1 DE 69018690D1
Authority
DE
Germany
Prior art keywords
production
cell matrix
eprom cell
eprom
matrix
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69018690T
Other languages
English (en)
Other versions
DE69018690T2 (de
Inventor
Stefano Mazzali
Massimo Melanotte
Luisa Masini
Mario Sali
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
STMicroelectronics SRL
Original Assignee
SGS Thomson Microelectronics SRL
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by SGS Thomson Microelectronics SRL filed Critical SGS Thomson Microelectronics SRL
Publication of DE69018690D1 publication Critical patent/DE69018690D1/de
Application granted granted Critical
Publication of DE69018690T2 publication Critical patent/DE69018690T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B41/00—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates
    • H10B41/10—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by the top-view layout
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B41/00—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B69/00—Erasable-and-programmable ROM [EPROM] devices not provided for in groups H10B41/00 - H10B63/00, e.g. ultraviolet erasable-and-programmable ROM [UVEPROM] devices
DE69018690T 1989-04-07 1990-04-02 Verfahren zur Herstellung einer EPROM-Zellen-Matrize. Expired - Fee Related DE69018690T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
IT8983618A IT1235690B (it) 1989-04-07 1989-04-07 Procedimento di fabbricazione per una matrice di celle eprom organizzate a tovaglia.

Publications (2)

Publication Number Publication Date
DE69018690D1 true DE69018690D1 (de) 1995-05-24
DE69018690T2 DE69018690T2 (de) 1995-09-07

Family

ID=11323221

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69018690T Expired - Fee Related DE69018690T2 (de) 1989-04-07 1990-04-02 Verfahren zur Herstellung einer EPROM-Zellen-Matrize.

Country Status (5)

Country Link
US (1) US5081056A (de)
EP (1) EP0396508B1 (de)
JP (1) JP2843410B2 (de)
DE (1) DE69018690T2 (de)
IT (1) IT1235690B (de)

Families Citing this family (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
IT1236601B (it) * 1989-12-22 1993-03-18 Sgs Thomson Microelectronics Dispositivo a semiconduttore integrato di tipo eprom con connessioni metalliche di source e procedimento per la sua fabbricazione.
IT1236980B (it) * 1989-12-22 1993-05-12 Sgs Thomson Microelectronics Cella di memoria eprom non volatile a gate divisa e processo ad isolamento di campo autoallineato per l'ottenimento della cella suddetta
US5371031A (en) * 1990-08-01 1994-12-06 Texas Instruments Incorporated Method of making EEPROM array with buried N+ windows and with separate erasing and programming regions
US5275962A (en) * 1991-04-08 1994-01-04 Texas Instruments Incorporated Mask programmable gate array base cell
DE69229374T2 (de) * 1991-04-18 2000-01-20 National Semiconductor Corp., Santa Clara Gestapeltes Ätzverfahren für Koppelpunkt-EPROM-Matrizen
US5270240A (en) * 1991-07-10 1993-12-14 Micron Semiconductor, Inc. Four poly EPROM process and structure comprising a conductive source line structure and self-aligned polycrystalline silicon digit lines
US5470772A (en) * 1991-11-06 1995-11-28 Intel Corporation Silicidation method for contactless EPROM related devices
US5313421A (en) * 1992-01-14 1994-05-17 Sundisk Corporation EEPROM with split gate source side injection
US7071060B1 (en) * 1996-02-28 2006-07-04 Sandisk Corporation EEPROM with split gate source side infection with sidewall spacers
US6222762B1 (en) * 1992-01-14 2001-04-24 Sandisk Corporation Multi-state memory
US5712180A (en) * 1992-01-14 1998-01-27 Sundisk Corporation EEPROM with split gate source side injection
EP1032034A1 (de) * 1992-01-22 2000-08-30 Macronix International Co., Ltd. Verfahren zur Speicherbauelementherstellung
EP0573728B1 (de) * 1992-06-01 1996-01-03 STMicroelectronics S.r.l. Verfahren zur Herstellung hochintegrierter kontaktloser EPROM's
US5350706A (en) * 1992-09-30 1994-09-27 Texas Instruments Incorporated CMOS memory cell array
US5427967A (en) * 1993-03-11 1995-06-27 National Semiconductor Corporation Technique for making memory cells in a way which suppresses electrically conductive stringers
US5541130A (en) * 1995-06-07 1996-07-30 International Business Machines Corporation Process for making and programming a flash memory array
DE69739045D1 (de) * 1997-08-27 2008-11-27 St Microelectronics Srl Herstellungsverfahren für elektronische Speicherbauelemente mit virtueller Masse
US6090707A (en) 1999-09-02 2000-07-18 Micron Technology, Inc. Method of forming a conductive silicide layer on a silicon comprising substrate and method of forming a conductive silicide contact
JP2002319109A (ja) * 2001-04-20 2002-10-31 Shinka Jitsugyo Kk 薄膜磁気ヘッドおよびその製造方法
US7049652B2 (en) * 2003-12-10 2006-05-23 Sandisk Corporation Pillar cell flash memory technology

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4377818A (en) * 1978-11-02 1983-03-22 Texas Instruments Incorporated High density electrically programmable ROM
IT1213241B (it) * 1984-11-07 1989-12-14 Ates Componenti Elettron Matrice di memoria eprom con celle elementari simmetriche mos e suo metodo di scrittura.
JPS60149168A (ja) * 1984-11-21 1985-08-06 Hitachi Ltd 半導体装置の製造方法
IT1213249B (it) * 1984-11-26 1989-12-14 Ates Componenti Elettron Processo per la fabbricazione distrutture integrate includenti celle di memoria non volatili con strati di silicio autoallineati ed associati transistori.
JP2633555B2 (ja) * 1987-03-23 1997-07-23 株式会社東芝 半導体装置の製造方法
US4780424A (en) * 1987-09-28 1988-10-25 Intel Corporation Process for fabricating electrically alterable floating gate memory devices
IT1217403B (it) * 1988-04-12 1990-03-22 Sgs Thomson Microelectronics Matrice di memoria a tovaglia con celle eprom sfalsate
IT1226556B (it) * 1988-07-29 1991-01-24 Sgs Thomson Microelectronics Matrice a tovaglia di celle di memoria eprom singolarmente accessibili mediante decodifica tradizionale.

Also Published As

Publication number Publication date
JP2843410B2 (ja) 1999-01-06
JPH02295172A (ja) 1990-12-06
IT1235690B (it) 1992-09-21
EP0396508A2 (de) 1990-11-07
IT8983618A0 (it) 1989-04-07
EP0396508A3 (de) 1991-10-23
EP0396508B1 (de) 1995-04-19
US5081056A (en) 1992-01-14
DE69018690T2 (de) 1995-09-07

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee