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DE69932701D1 - Pinning-Lage für magnetische Anordnungen - Google Patents

Pinning-Lage für magnetische Anordnungen

Info

Publication number
DE69932701D1
DE69932701D1 DE69932701T DE69932701T DE69932701D1 DE 69932701 D1 DE69932701 D1 DE 69932701D1 DE 69932701 T DE69932701 T DE 69932701T DE 69932701 T DE69932701 T DE 69932701T DE 69932701 D1 DE69932701 D1 DE 69932701D1
Authority
DE
Germany
Prior art keywords
pinning layer
magnetic arrangements
arrangements
magnetic
pinning
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69932701T
Other languages
English (en)
Other versions
DE69932701T2 (de
Inventor
Rolf Allenspach
Jean Fompeyrine
Eric Fullerton
Jean-Pierre Locquet
Timothy Moran
Maria J Seo
Jin Won Seo
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
HGST Netherlands BV
Original Assignee
Hitachi Global Storage Technologies Netherlands BV
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Global Storage Technologies Netherlands BV filed Critical Hitachi Global Storage Technologies Netherlands BV
Application granted granted Critical
Publication of DE69932701D1 publication Critical patent/DE69932701D1/de
Publication of DE69932701T2 publication Critical patent/DE69932701T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
    • G11B5/127—Structure or manufacture of heads, e.g. inductive
    • G11B5/33—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only
    • G11B5/39—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects
    • G11B5/3903—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects using magnetic thin film layers or their effects, the films being part of integrated structures
    • G11B5/3906—Details related to the use of magnetic thin film layers or to their effects
    • G11B5/3929—Disposition of magnetic thin films not used for directly coupling magnetic flux from the track to the MR film or for shielding
    • G11B5/3932—Magnetic biasing films
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y25/00—Nanomagnetism, e.g. magnetoimpedance, anisotropic magnetoresistance, giant magnetoresistance or tunneling magnetoresistance
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R33/00—Arrangements or instruments for measuring magnetic variables
    • G01R33/02—Measuring direction or magnitude of magnetic fields or magnetic flux
    • G01R33/06—Measuring direction or magnitude of magnetic fields or magnetic flux using galvano-magnetic devices
    • G01R33/09—Magnetoresistive devices
    • G01R33/093—Magnetoresistive devices using multilayer structures, e.g. giant magnetoresistance sensors
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
    • G11B5/127—Structure or manufacture of heads, e.g. inductive
    • G11B5/33—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only
    • G11B5/39—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects
    • G11B5/3903—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects using magnetic thin film layers or their effects, the films being part of integrated structures
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
    • G11B5/62—Record carriers characterised by the selection of the material
    • G11B5/64—Record carriers characterised by the selection of the material comprising only the magnetic material without bonding agent
    • G11B5/65—Record carriers characterised by the selection of the material comprising only the magnetic material without bonding agent characterised by its composition
    • G11B5/653—Record carriers characterised by the selection of the material comprising only the magnetic material without bonding agent characterised by its composition containing Fe or Ni
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F10/00—Thin magnetic films, e.g. of one-domain structure
    • H01F10/32—Spin-exchange-coupled multilayers, e.g. nanostructured superlattices
    • H01F10/3218—Exchange coupling of magnetic films via an antiferromagnetic interface
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F10/00—Thin magnetic films, e.g. of one-domain structure
    • H01F10/32—Spin-exchange-coupled multilayers, e.g. nanostructured superlattices
    • H01F10/324—Exchange coupling of magnetic film pairs via a very thin non-magnetic spacer, e.g. by exchange with conduction electrons of the spacer
    • H01F10/3268—Exchange coupling of magnetic film pairs via a very thin non-magnetic spacer, e.g. by exchange with conduction electrons of the spacer the exchange coupling being asymmetric, e.g. by use of additional pinning, by using antiferromagnetic or ferromagnetic coupling interface, i.e. so-called spin-valve [SV] structure, e.g. NiFe/Cu/NiFe/FeMn
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
    • G11B5/127—Structure or manufacture of heads, e.g. inductive
    • G11B5/33—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only
    • G11B5/39—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects
    • G11B2005/3996—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects large or giant magnetoresistive effects [GMR], e.g. as generated in spin-valve [SV] devices
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
    • G11B5/74—Record carriers characterised by the form, e.g. sheet shaped to wrap around a drum
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S428/00—Stock material or miscellaneous articles
    • Y10S428/90—Magnetic feature

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Nanotechnology (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Mathematical Physics (AREA)
  • Theoretical Computer Science (AREA)
  • Hall/Mr Elements (AREA)
  • Thin Magnetic Films (AREA)
  • Measuring Magnetic Variables (AREA)
  • Mram Or Spin Memory Techniques (AREA)
  • Magnetic Heads (AREA)
  • Semiconductor Memories (AREA)
DE69932701T 1999-03-19 1999-03-19 Pinning-Lage für magnetische Anordnungen Expired - Fee Related DE69932701T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
EP99105662A EP1039490B1 (de) 1999-03-19 1999-03-19 Pinning-Lage für magnetische Anordnungen

Publications (2)

Publication Number Publication Date
DE69932701D1 true DE69932701D1 (de) 2006-09-21
DE69932701T2 DE69932701T2 (de) 2007-09-13

Family

ID=8237818

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69932701T Expired - Fee Related DE69932701T2 (de) 1999-03-19 1999-03-19 Pinning-Lage für magnetische Anordnungen

Country Status (6)

Country Link
US (1) US6631057B1 (de)
EP (1) EP1039490B1 (de)
JP (1) JP3344712B2 (de)
KR (1) KR100358452B1 (de)
DE (1) DE69932701T2 (de)
SG (1) SG97144A1 (de)

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3578116B2 (ja) * 2001-06-25 2004-10-20 Ｔｄｋ株式会社 スピンバルブ巨大磁気抵抗効果センサの製造方法及び薄膜磁気ヘッドの製造方法
JP4466487B2 (ja) * 2005-06-27 2010-05-26 Ｔｄｋ株式会社 磁気センサおよび電流センサ
US20090246602A1 (en) * 2005-09-26 2009-10-01 Yuko Sawaki Microparticle-Supported Carbon Particle, Method for Production Thereof, and Fuel Cell Electrode
WO2007034946A1 (ja) * 2005-09-26 2007-03-29 Hitachi Maxell, Ltd. 微粒子担持カーボン粒子およびその製造方法ならびに燃料電池用電極
JP4875410B2 (ja) * 2006-06-13 2012-02-15 トヨタ自動車株式会社 微粒子担持カーボン粒子およびその製造方法ならびに燃料電池用電極
US8007691B2 (en) * 2006-06-13 2011-08-30 Hitachi Maxell Energy, Ltd. Fine particle of perovskite oxide, particle having deposited perovskite oxide, catalyst material, catalyst material for oxygen reduction, catalyst material for fuel cell, and electrode for fuel cell
JP5214117B2 (ja) * 2006-06-20 2013-06-19 トヨタ自動車株式会社 ペロブスカイト型酸化物微粒子、ペロブスカイト型酸化物担持粒子、触媒材料、燃料電池用電極
DE102007032299B4 (de) * 2007-07-11 2009-04-02 Siemens Ag Sensor, insbesondere zur Magnetfeldmessung
US8223533B2 (en) 2008-09-26 2012-07-17 Kabushiki Kaisha Toshiba Magnetoresistive effect device and magnetic memory
JP2010232447A (ja) * 2009-03-27 2010-10-14 Toshiba Corp 磁気抵抗効果素子および磁気メモリ
US9099384B2 (en) 2012-02-15 2015-08-04 Drexel University Charge ordered vertical transistors
JP7204549B2 (ja) * 2019-03-18 2023-01-16 キオクシア株式会社 磁気装置

Family Cites Families (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3645787A (en) 1970-01-06 1972-02-29 North American Rockwell Method of forming multiple layer structures including magnetic domains
JPS5117720A (ja) 1974-08-01 1976-02-12 Ono Ietake Enjin
US4103315A (en) * 1977-06-24 1978-07-25 International Business Machines Corporation Antiferromagnetic-ferromagnetic exchange bias films
US4621030A (en) * 1982-07-19 1986-11-04 Hitachi, Ltd. Perpendicular magnetic recording medium and manufacturing method thereof
DE3820475C1 (de) * 1988-06-16 1989-12-21 Kernforschungsanlage Juelich Gmbh, 5170 Juelich, De
JPH05234753A (ja) 1992-02-21 1993-09-10 Casio Comput Co Ltd 希土類オルソフェライト薄膜およびその形成方法
JPH06103536A (ja) * 1992-09-17 1994-04-15 Hitachi Ltd 磁気抵抗効果型磁気ヘッド
US5301079A (en) * 1992-11-17 1994-04-05 International Business Machines Corporation Current biased magnetoresistive spin valve sensor
JP3321615B2 (ja) 1995-09-21 2002-09-03 ティーディーケイ株式会社 磁気抵抗効果素子および磁気変換素子
EP0794581A4 (de) * 1995-09-21 1999-10-06 Tdk Corp Magnetischer umwandler
JP2850866B2 (ja) * 1996-07-31 1999-01-27 日本電気株式会社 磁気抵抗センサ
US5612098A (en) * 1996-08-14 1997-03-18 Read-Rite Corporation Method of forming a thin film magnetic structure having ferromagnetic and antiferromagnetic layers
US5717550A (en) * 1996-11-01 1998-02-10 Read-Rite Corporation Antiferromagnetic exchange biasing using buffer layer
US5859754A (en) * 1997-04-03 1999-01-12 Read-Rite Corporation Magnetoresistive transducer having a common magnetic bias using assertive and complementary signals
JP3198265B2 (ja) * 1997-04-10 2001-08-13 アルプス電気株式会社 磁気抵抗効果素子

Also Published As

Publication number Publication date
JP2000307171A (ja) 2000-11-02
JP3344712B2 (ja) 2002-11-18
DE69932701T2 (de) 2007-09-13
US6631057B1 (en) 2003-10-07
SG97144A1 (en) 2003-07-18
KR20000062717A (ko) 2000-10-25
KR100358452B1 (ko) 2002-10-25
EP1039490A1 (de) 2000-09-27
EP1039490B1 (de) 2006-08-09

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee