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DE69911109D1 - Verfahren und Vorrichtung zur Herstellung freistehender Siliciumcarbidgegenstände - Google Patents

Verfahren und Vorrichtung zur Herstellung freistehender Siliciumcarbidgegenstände

Info

Publication number
DE69911109D1
DE69911109D1 DE69911109T DE69911109T DE69911109D1 DE 69911109 D1 DE69911109 D1 DE 69911109D1 DE 69911109 T DE69911109 T DE 69911109T DE 69911109 T DE69911109 T DE 69911109T DE 69911109 D1 DE69911109 D1 DE 69911109D1
Authority
DE
Germany
Prior art keywords
silicon carbide
producing free
standing silicon
carbide objects
objects
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69911109T
Other languages
English (en)
Other versions
DE69911109T2 (de
Inventor
Jitendra Singh Goela
Michael A Pickering
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
CVD Inc
Original Assignee
CVD Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by CVD Inc filed Critical CVD Inc
Application granted granted Critical
Publication of DE69911109D1 publication Critical patent/DE69911109D1/de
Publication of DE69911109T2 publication Critical patent/DE69911109T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
    • C04B35/515—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics
    • C04B35/56—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics based on carbides or oxycarbides
    • C04B35/565—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics based on carbides or oxycarbides based on silicon carbide
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/01—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes on temporary substrates, e.g. substrates subsequently removed by etching
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/32—Carbides
    • C23C16/325—Silicon carbide
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/13—Hollow or container type article [e.g., tube, vase, etc.]
    • Y10T428/131—Glass, ceramic, or sintered, fused, fired, or calcined metal oxide or metal carbide containing [e.g., porcelain, brick, cement, etc.]

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Organic Chemistry (AREA)
  • Materials Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Ceramic Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Inorganic Chemistry (AREA)
  • Structural Engineering (AREA)
  • Chemical Vapour Deposition (AREA)
  • Ceramic Products (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Carbon And Carbon Compounds (AREA)
DE69911109T 1998-05-05 1999-04-29 Verfahren und Vorrichtung zur Herstellung freistehender Siliciumcarbidgegenstände Expired - Fee Related DE69911109T2 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US09/072,927 US6228297B1 (en) 1998-05-05 1998-05-05 Method for producing free-standing silicon carbide articles
US72927 1998-05-05

Publications (2)

Publication Number Publication Date
DE69911109D1 true DE69911109D1 (de) 2003-10-16
DE69911109T2 DE69911109T2 (de) 2004-07-15

Family

ID=22110603

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69911109T Expired - Fee Related DE69911109T2 (de) 1998-05-05 1999-04-29 Verfahren und Vorrichtung zur Herstellung freistehender Siliciumcarbidgegenstände

Country Status (5)

Country Link
US (3) US6228297B1 (de)
EP (1) EP0955278B1 (de)
JP (1) JP4610683B2 (de)
DE (1) DE69911109T2 (de)
IL (1) IL129774A0 (de)

Families Citing this family (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6464912B1 (en) * 1999-01-06 2002-10-15 Cvd, Incorporated Method for producing near-net shape free standing articles by chemical vapor deposition
DE10085212B4 (de) * 1999-11-30 2008-11-20 Intel Corporation, Santa Clara Dielektrische Schicht, integrierte Schaltung und Verfahren zu deren Herstellung
US6616870B1 (en) * 2000-08-07 2003-09-09 Shipley Company, L.L.C. Method of producing high aspect ratio domes by vapor deposition
US6811761B2 (en) 2000-11-10 2004-11-02 Shipley Company, L.L.C. Silicon carbide with high thermal conductivity
US6811040B2 (en) * 2001-07-16 2004-11-02 Rohm And Haas Company Wafer holding apparatus
JP4064315B2 (ja) * 2003-08-20 2008-03-19 信越化学工業株式会社 誘導結合プラズマトーチ及び元素分析装置
US20050123713A1 (en) * 2003-12-05 2005-06-09 Forrest David T. Articles formed by chemical vapor deposition and methods for their manufacture
US20100297350A1 (en) * 2003-12-05 2010-11-25 David Thomas Forrest Free-standing silicon carbide articles formed by chemical vapor deposition and methods for their manufacture
US20070207268A1 (en) * 2003-12-08 2007-09-06 Webb R K Ribbed CVC structures and methods of producing
US20060057287A1 (en) * 2003-12-08 2006-03-16 Incomplete Trex Enterprises Corp Method of making chemical vapor composites
US20060228474A1 (en) * 2004-10-12 2006-10-12 Colby Foss Leading edge components for high speed air and space craft
US20100032857A1 (en) * 2005-02-28 2010-02-11 Saint-Gobain Ceramics & Plastics, Inc. Ceramic components, coated structures and methods for making same
US7828158B2 (en) * 2005-07-14 2010-11-09 Displays Plus, Inc. Merchandise dispensing apparatus providing theft deterrence
US20080000851A1 (en) * 2006-06-02 2008-01-03 Rohm And Haas Electronic Materials Llc Apparatus with fillet radius joints
US8079698B2 (en) * 2006-07-31 2011-12-20 Brother Kogyo Kabushiki Kaisha Inkjet recording apparatus
US8105649B1 (en) * 2007-08-09 2012-01-31 Imaging Systems Technology Fabrication of silicon carbide shell
IL220677A (en) 2011-06-30 2017-02-28 Rohm & Haas Elect Mat Transparent conductive items

Family Cites Families (26)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2050076C3 (de) * 1970-10-12 1980-06-26 Siemens Ag, 1000 Berlin Und 8000 Muenchen Vorrichtung zum Herstellen von Rohren aus Halbleitermaterial
DE2229229A1 (de) * 1972-06-15 1974-01-10 Siemens Ag Verfahren zum herstellen von aus silizium oder siliziumcarbid bestehenden formkoerpern
JPS5818349B2 (ja) * 1975-06-25 1983-04-12 ノ−トン カンパニ− 気体不透過性中空炭化ケイ素成形品およびその製造方法
JPS6035994B2 (ja) * 1978-07-10 1985-08-17 日本ピラ−工業株式会社 複合部材の製造方法
US4339645A (en) * 1980-07-03 1982-07-13 Rca Corporation RF Heating coil construction for stack of susceptors
US5154862A (en) * 1986-03-07 1992-10-13 Thermo Electron Corporation Method of forming composite articles from CVD gas streams and solid particles of fibers
US5071685A (en) * 1986-11-07 1991-12-10 Kasprzyk Martin R Ceramic articles, methods and apparatus for their manufacture
US4999228A (en) * 1988-05-06 1991-03-12 Shin-Etsu Chemical Co., Ltd. Silicon carbide diffusion tube for semi-conductor
US4895108A (en) * 1988-06-22 1990-01-23 The Babcock & Wilcox Company CVD apparatus and process for the preparation of fiber-reinforced ceramic composites
US4963393A (en) 1989-09-07 1990-10-16 Cvd Incorporated Method to prevent backside growth on substrates in a vapor deposition system
US4997678A (en) 1989-10-23 1991-03-05 Cvd Incorporated Chemical vapor deposition process to replicate the finish and figure of preshaped structures
US5071596A (en) 1989-10-23 1991-12-10 Cvd Incorporated Fabrication of lightweight ceramic mirrors by means of a chemical vapor deposition process
US4990374A (en) * 1989-11-28 1991-02-05 Cvd Incorporated Selective area chemical vapor deposition
IL100743A (en) * 1992-01-23 1994-11-28 Yeda Res & Dev Central solar collector
US5374412A (en) 1992-07-31 1994-12-20 Cvd, Inc. Highly polishable, highly thermally conductive silicon carbide
US5538230A (en) * 1994-08-08 1996-07-23 Sibley; Thomas Silicon carbide carrier for wafer processing
US5443649A (en) * 1994-11-22 1995-08-22 Sibley; Thomas Silicon carbide carrier for wafer processing in vertical furnaces
US5476549A (en) * 1995-01-24 1995-12-19 Cvd, Inc. Process for an improved laminate of ZnSe and ZnS
US5635244A (en) * 1995-08-28 1997-06-03 Lsi Logic Corporation Method of forming a layer of material on a wafer
US5683507A (en) 1995-09-05 1997-11-04 Northrop Grumman Corporation Apparatus for growing large silicon carbide single crystals
US5720933A (en) * 1996-03-11 1998-02-24 Srinivasan; Makuteswara Process for preparing ceramic fibers
US5683028A (en) 1996-05-03 1997-11-04 Cvd, Incorporated Bonding of silicon carbide components
JPH1017382A (ja) * 1996-06-28 1998-01-20 Mitsubishi Pencil Co Ltd 炭化珪素成形体の製造方法
US5904778A (en) * 1996-07-26 1999-05-18 Applied Materials, Inc. Silicon carbide composite article particularly useful for plasma reactors
JP3596710B2 (ja) * 1996-09-10 2004-12-02 信越半導体株式会社 気相成長装置用サセプタ
JP2891978B1 (ja) * 1998-02-17 1999-05-17 日本ピラー工業株式会社 炭化珪素質構造体

Also Published As

Publication number Publication date
EP0955278A3 (de) 1999-12-15
DE69911109T2 (de) 2004-07-15
US20010022408A1 (en) 2001-09-20
US20030178735A1 (en) 2003-09-25
US6228297B1 (en) 2001-05-08
IL129774A0 (en) 2000-02-29
JP4610683B2 (ja) 2011-01-12
EP0955278A2 (de) 1999-11-10
EP0955278B1 (de) 2003-09-10
JP2000087239A (ja) 2000-03-28

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee