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DE69825609D1 - NARROW-BAND EXCIMER LASER WITH GAS ADDITIVE - Google Patents

NARROW-BAND EXCIMER LASER WITH GAS ADDITIVE

Info

Publication number
DE69825609D1
DE69825609D1 DE69825609T DE69825609T DE69825609D1 DE 69825609 D1 DE69825609 D1 DE 69825609D1 DE 69825609 T DE69825609 T DE 69825609T DE 69825609 T DE69825609 T DE 69825609T DE 69825609 D1 DE69825609 D1 DE 69825609D1
Authority
DE
Germany
Prior art keywords
narrow
excimer laser
gas additive
band excimer
band
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE69825609T
Other languages
German (de)
Other versions
DE69825609T2 (en
Inventor
Thomas Hofmann
Toshihiko Ishihara
P Das
Alexander I Ershov
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Cymer Inc
Original Assignee
Cymer Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Family has litigation
First worldwide family litigation filed litigation Critical https://patents.darts-ip.com/?family=25486194&utm_source=google_patent&utm_medium=platform_link&utm_campaign=public_patent_search&patent=DE69825609(D1) "Global patent litigation dataset” by Darts-ip is licensed under a Creative Commons Attribution 4.0 International License.
Priority claimed from US08/947,474 external-priority patent/US5982800A/en
Application filed by Cymer Inc filed Critical Cymer Inc
Application granted granted Critical
Publication of DE69825609D1 publication Critical patent/DE69825609D1/en
Publication of DE69825609T2 publication Critical patent/DE69825609T2/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70008—Production of exposure light, i.e. light sources
    • G03F7/70025—Production of exposure light, i.e. light sources by lasers
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70008—Production of exposure light, i.e. light sources
    • G03F7/70041—Production of exposure light, i.e. light sources by pulsed sources, e.g. multiplexing, pulse duration, interval control or intensity control
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/7055—Exposure light control in all parts of the microlithographic apparatus, e.g. pulse length control or light interruption
    • G03F7/70558—Dose control, i.e. achievement of a desired dose
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/7055—Exposure light control in all parts of the microlithographic apparatus, e.g. pulse length control or light interruption
    • G03F7/70575—Wavelength control, e.g. control of bandwidth, multiple wavelength, selection of wavelength or matching of optical components to wavelength
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/02—Constructional details
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/02—Constructional details
    • H01S3/03—Constructional details of gas laser discharge tubes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/02—Constructional details
    • H01S3/03—Constructional details of gas laser discharge tubes
    • H01S3/036—Means for obtaining or maintaining the desired gas pressure within the tube, e.g. by gettering, replenishing; Means for circulating the gas, e.g. for equalising the pressure within the tube
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/09—Processes or apparatus for excitation, e.g. pumping
    • H01S3/097—Processes or apparatus for excitation, e.g. pumping by gas discharge of a gas laser
    • H01S3/0971—Processes or apparatus for excitation, e.g. pumping by gas discharge of a gas laser transversely excited
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/14—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range characterised by the material used as the active medium
    • H01S3/22—Gases
    • H01S3/223—Gases the active gas being polyatomic, i.e. containing two or more atoms
    • H01S3/225—Gases the active gas being polyatomic, i.e. containing two or more atoms comprising an excimer or exciplex
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/05—Construction or shape of optical resonators; Accommodation of active medium therein; Shape of active medium
    • H01S3/08—Construction or shape of optical resonators or components thereof
    • H01S3/08004—Construction or shape of optical resonators or components thereof incorporating a dispersive element, e.g. a prism for wavelength selection
    • H01S3/08009—Construction or shape of optical resonators or components thereof incorporating a dispersive element, e.g. a prism for wavelength selection using a diffraction grating
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/14—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range characterised by the material used as the active medium
    • H01S3/22—Gases
    • H01S3/223—Gases the active gas being polyatomic, i.e. containing two or more atoms
    • H01S3/225—Gases the active gas being polyatomic, i.e. containing two or more atoms comprising an excimer or exciplex
    • H01S3/2251—ArF, i.e. argon fluoride is comprised for lasing around 193 nm
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/14—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range characterised by the material used as the active medium
    • H01S3/22—Gases
    • H01S3/223—Gases the active gas being polyatomic, i.e. containing two or more atoms
    • H01S3/225—Gases the active gas being polyatomic, i.e. containing two or more atoms comprising an excimer or exciplex
    • H01S3/2256—KrF, i.e. krypton fluoride is comprised for lasing around 248 nm

Landscapes

  • Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Optics & Photonics (AREA)
  • General Physics & Mathematics (AREA)
  • Lasers (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Die Bonding (AREA)
DE69825609T 1997-10-10 1998-09-25 NARROWBAND EXCIMER LASER WITH GAS SUPPLY Expired - Lifetime DE69825609T2 (en)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US947474 1997-10-10
US08/947,474 US5982800A (en) 1997-04-23 1997-10-10 Narrow band excimer laser
US09/082,139 US6014398A (en) 1997-10-10 1998-05-20 Narrow band excimer laser with gas additive
US82139 1998-05-20
PCT/US1998/020226 WO1999019952A1 (en) 1997-10-10 1998-09-25 Narrow band excimer laser with gas additive

Publications (2)

Publication Number Publication Date
DE69825609D1 true DE69825609D1 (en) 2004-09-16
DE69825609T2 DE69825609T2 (en) 2005-09-15

Family

ID=25486194

Family Applications (2)

Application Number Title Priority Date Filing Date
DE69819547T Expired - Lifetime DE69819547T2 (en) 1997-10-10 1998-08-21 NARROW-BAND EXCIMER LASER
DE69825609T Expired - Lifetime DE69825609T2 (en) 1997-10-10 1998-09-25 NARROWBAND EXCIMER LASER WITH GAS SUPPLY

Family Applications Before (1)

Application Number Title Priority Date Filing Date
DE69819547T Expired - Lifetime DE69819547T2 (en) 1997-10-10 1998-08-21 NARROW-BAND EXCIMER LASER

Country Status (9)

Country Link
US (1) US6014398A (en)
EP (2) EP1021856B1 (en)
JP (2) JP3154977B2 (en)
KR (2) KR100504073B1 (en)
AU (2) AU9113198A (en)
DE (2) DE69819547T2 (en)
ES (1) ES2226175T3 (en)
TW (2) TW382842B (en)
WO (1) WO1999019952A1 (en)

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US6128323A (en) * 1997-04-23 2000-10-03 Cymer, Inc. Reliable modular production quality narrow-band high REP rate excimer laser
US6188710B1 (en) * 1997-10-10 2001-02-13 Cymer, Inc. Narrow band gas discharge laser with gas additive
US7006541B2 (en) * 1998-06-01 2006-02-28 Lambda Physik Ag Absolute wavelength calibration of lithography laser using multiple element or tandem see through hollow cathode lamp
US6160832A (en) 1998-06-01 2000-12-12 Lambda Physik Gmbh Method and apparatus for wavelength calibration
US6580517B2 (en) 2000-03-01 2003-06-17 Lambda Physik Ag Absolute wavelength calibration of lithography laser using multiple element or tandem see through hollow cathode lamp
US6792023B1 (en) * 1998-06-04 2004-09-14 Lambda Physik Ag Method and apparatus for reduction of spectral fluctuations
US6526085B2 (en) * 1998-10-05 2003-02-25 Lambda Physik Ag Performance control system and method for gas discharge lasers
US6424666B1 (en) 1999-06-23 2002-07-23 Lambda Physik Ag Line-narrowing module for high power laser
US6490307B1 (en) 1999-03-17 2002-12-03 Lambda Physik Ag Method and procedure to automatically stabilize excimer laser output parameters
US6269110B1 (en) 1998-10-05 2001-07-31 Lambda Physik Ag Internal wavelength calibration for tunable ArF-excimer laser using atomic carbon and molecular oxygen absorption lines
DE19942455A1 (en) 1998-10-05 2000-04-06 Lambda Physik Gmbh Power control method for gas discharge laser comprises comparing property of laser output beam as function of voltage applied to discharge chamber for optimal, current gas mixture states
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US6965624B2 (en) * 1999-03-17 2005-11-15 Lambda Physik Ag Laser gas replenishment method
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US6553050B1 (en) 1999-11-18 2003-04-22 Lambda Physik Ag Narrow band excimer or molecular fluorine laser having an output coupling interferometer
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US6597462B2 (en) 2000-03-01 2003-07-22 Lambda Physik Ag Laser wavelength and bandwidth monitor
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US6904073B2 (en) * 2001-01-29 2005-06-07 Cymer, Inc. High power deep ultraviolet laser with long life optics
US7180081B2 (en) * 2000-06-09 2007-02-20 Cymer, Inc. Discharge produced plasma EUV light source
US6807205B1 (en) 2000-07-14 2004-10-19 Lambda Physik Ag Precise monitor etalon calibration technique
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US7830934B2 (en) * 2001-08-29 2010-11-09 Cymer, Inc. Multi-chamber gas discharge laser bandwidth control through discharge timing
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Also Published As

Publication number Publication date
TW393814B (en) 2000-06-11
KR100561957B1 (en) 2006-03-21
EP1019994A4 (en) 2001-03-21
DE69825609T2 (en) 2005-09-15
TW382842B (en) 2000-02-21
EP1021856A1 (en) 2000-07-26
KR100504073B1 (en) 2005-07-27
JPH11191648A (en) 1999-07-13
DE69819547D1 (en) 2003-12-11
WO1999019952A1 (en) 1999-04-22
JPH11191660A (en) 1999-07-13
EP1021856A4 (en) 2001-03-21
KR20010031033A (en) 2001-04-16
AU9511098A (en) 1999-05-03
EP1019994B1 (en) 2004-08-11
JP3154977B2 (en) 2001-04-09
EP1021856B1 (en) 2003-11-05
JP3046955B2 (en) 2000-05-29
EP1019994A1 (en) 2000-07-19
KR20010031028A (en) 2001-04-16
DE69819547T2 (en) 2004-05-13
ES2226175T3 (en) 2005-03-16
US6014398A (en) 2000-01-11
AU9113198A (en) 1999-05-03

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Legal Events

Date Code Title Description
8363 Opposition against the patent