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DE69801283D1 - Optisches Halbleiterbauelement - Google Patents

Optisches Halbleiterbauelement

Info

Publication number
DE69801283D1
DE69801283D1 DE69801283T DE69801283T DE69801283D1 DE 69801283 D1 DE69801283 D1 DE 69801283D1 DE 69801283 T DE69801283 T DE 69801283T DE 69801283 T DE69801283 T DE 69801283T DE 69801283 D1 DE69801283 D1 DE 69801283D1
Authority
DE
Germany
Prior art keywords
optical semiconductor
semiconductor component
optical
component
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE69801283T
Other languages
English (en)
Other versions
DE69801283T2 (de
Inventor
Jean-Pierre Di Weber
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Telefonaktiebolaget LM Ericsson AB
Original Assignee
Telefonaktiebolaget LM Ericsson AB
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Telefonaktiebolaget LM Ericsson AB filed Critical Telefonaktiebolaget LM Ericsson AB
Publication of DE69801283D1 publication Critical patent/DE69801283D1/de
Application granted granted Critical
Publication of DE69801283T2 publication Critical patent/DE69801283T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/1028—Coupling to elements in the cavity, e.g. coupling to waveguides adjacent the active region, e.g. forward coupled [DFC] structures
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
    • G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
    • G02B6/122—Basic optical elements, e.g. light-guiding paths
    • G02B6/1228—Tapered waveguides, e.g. integrated spot-size transformers
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
    • G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
    • G02B2006/12083—Constructional arrangements
    • G02B2006/12121—Laser
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
    • G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
    • G02B2006/12166—Manufacturing methods
    • G02B2006/12195—Tapering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/026—Monolithically integrated components, e.g. waveguides, monitoring photo-detectors, drivers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/1003—Waveguide having a modified shape along the axis, e.g. branched, curved, tapered, voids
    • H01S5/1014—Tapered waveguide, e.g. spotsize converter
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/1053—Comprising an active region having a varying composition or cross-section in a specific direction
    • H01S5/1064—Comprising an active region having a varying composition or cross-section in a specific direction varying width along the optical axis
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/1082—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region with a special facet structure, e.g. structured, non planar, oblique

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Engineering & Computer Science (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Semiconductor Lasers (AREA)
  • Optical Integrated Circuits (AREA)
DE69801283T 1997-06-06 1998-06-02 Optisches Halbleiterbauelement Expired - Lifetime DE69801283T2 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
GB9711835A GB2326020B (en) 1997-06-06 1997-06-06 Waveguide
PCT/EP1998/003300 WO1998056085A1 (en) 1997-06-06 1998-06-02 Waveguide

Publications (2)

Publication Number Publication Date
DE69801283D1 true DE69801283D1 (de) 2001-09-06
DE69801283T2 DE69801283T2 (de) 2001-11-15

Family

ID=10813753

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69801283T Expired - Lifetime DE69801283T2 (de) 1997-06-06 1998-06-02 Optisches Halbleiterbauelement

Country Status (12)

Country Link
US (1) US6421492B1 (de)
EP (1) EP0986845B1 (de)
JP (2) JP4111549B2 (de)
KR (1) KR100582114B1 (de)
CN (1) CN1106062C (de)
AU (1) AU8109998A (de)
CA (1) CA2292907C (de)
DE (1) DE69801283T2 (de)
ES (1) ES2159187T3 (de)
GB (1) GB2326020B (de)
TW (1) TW381367B (de)
WO (1) WO1998056085A1 (de)

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6399403B1 (en) * 1999-08-20 2002-06-04 Agere Systems Guardian Corp. Method of fabricating a semiconductor mesa device
EP1186918B1 (de) * 2000-09-06 2005-03-02 Corning Incorporated Kompensation des Brechungsindexes von aufgeputschtem InP
AU2001297983A1 (en) * 2000-12-14 2002-12-03 Mindaugas F. Duatartas Optical waveguide termination with vertical and horizontal mode shaping
US6829275B2 (en) * 2001-12-20 2004-12-07 Bookham Technology, Plc Hybrid confinement layers of buried heterostructure semiconductor laser
JP3766637B2 (ja) 2002-03-04 2006-04-12 富士通株式会社 光結合素子及び光デバイス
GB2389962B (en) * 2002-06-21 2006-01-04 Kamelian Ltd Reduction of truncation loss of tapered active waveguide
US6983086B2 (en) * 2003-06-19 2006-01-03 Intel Corporation Thermally isolating optical devices
KR100520796B1 (ko) * 2003-10-20 2005-10-13 한국전자통신연구원 평면 매립형 반도체 광 증폭기의 제작 방법
KR100596509B1 (ko) * 2004-11-18 2006-07-05 한국전자통신연구원 봉우리형 도파로 집적 반도체 광소자의 제조방법
US9557484B1 (en) * 2014-02-06 2017-01-31 Aurrion, Inc. High-efficiency optical waveguide transitions
US9664853B2 (en) 2014-07-11 2017-05-30 Acacia Communications, Inc. Low-loss waveguide transition
US10852478B1 (en) * 2019-05-28 2020-12-01 Ciena Corporation Monolithically integrated gain element

Family Cites Families (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58134491A (ja) * 1982-02-05 1983-08-10 Matsushita Electric Ind Co Ltd 半導体レ−ザ−装置
US4821276A (en) * 1987-04-20 1989-04-11 General Electric Company Super-luminescent diode
JP2695440B2 (ja) * 1988-07-07 1997-12-24 三菱電機株式会社 半導体レーザ装置
EP0386797B1 (de) * 1989-03-10 1997-06-04 Canon Kabushiki Kaisha Photodetektor mit wellenlängenselektivem optischem Koppler
WO1991006552A1 (en) 1989-10-30 1991-05-16 Eli Lilly And Company A83543 recovery process
US4999591A (en) * 1990-02-22 1991-03-12 The United States Of America As Represented By The Secretary Of The Air Force Circular TM01 to TE11 waveguide mode converter
DE59208821D1 (de) * 1991-02-08 1997-10-02 Siemens Ag Integriert optisches Bauelement für die Kopplung zwischen unterschiedlich dimensionierten Wellenleitern
FR2684823B1 (fr) * 1991-12-04 1994-01-21 Alcatel Alsthom Cie Gle Electric Composant optique semi-conducteur a mode de sortie elargi et son procede de fabrication.
NL9200328A (nl) * 1992-02-21 1993-09-16 Nederland Ptt Optische schakelcomponent.
NL9400266A (nl) * 1994-02-22 1995-10-02 Nederland Ptt Werkwijze en bijbehorend paar van maskerpatronen voor het onder toepassing van dubbele maskering vervaardigen van geintegreerde optische golfgeleiderstructuren.
EP0746887B1 (de) * 1994-02-24 2000-11-02 BRITISH TELECOMMUNICATIONS public limited company Halbleitervorrichtung
CA2123757C (en) * 1994-05-17 2002-06-25 Francois Gonthier Method for making optical waveguide couplers with low wavelength sensitivity and couplers thereby produced
JPH08116135A (ja) * 1994-10-17 1996-05-07 Mitsubishi Electric Corp 導波路集積素子の製造方法，及び導波路集積素子
JP2865000B2 (ja) * 1994-10-27 1999-03-08 日本電気株式会社 出力導波路集積半導体レーザとその製造方法
JPH08304664A (ja) * 1995-05-09 1996-11-22 Furukawa Electric Co Ltd:The 波長分波素子
JPH09102651A (ja) * 1995-10-09 1997-04-15 Hitachi Ltd 導波路型半導体光素子および光モジュール
GB2309581B (en) * 1996-01-27 2000-03-22 Northern Telecom Ltd Semiconductor lasers
US6162655A (en) * 1999-01-11 2000-12-19 Lucent Technologies Inc. Method of fabricating an expanded beam optical waveguide device

Also Published As

Publication number Publication date
KR20010013385A (ko) 2001-02-26
JP2008113041A (ja) 2008-05-15
US6421492B1 (en) 2002-07-16
ES2159187T3 (es) 2001-09-16
GB2326020B (en) 2002-05-15
AU8109998A (en) 1998-12-21
EP0986845B1 (de) 2001-08-01
TW381367B (en) 2000-02-01
JP2002503393A (ja) 2002-01-29
CN1106062C (zh) 2003-04-16
JP4111549B2 (ja) 2008-07-02
WO1998056085A1 (en) 1998-12-10
KR100582114B1 (ko) 2006-05-23
CN1259238A (zh) 2000-07-05
CA2292907A1 (en) 1998-12-10
CA2292907C (en) 2005-08-09
DE69801283T2 (de) 2001-11-15
EP0986845A1 (de) 2000-03-22
GB2326020A (en) 1998-12-09
GB9711835D0 (en) 1997-08-06

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Legal Events

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