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DE69733350D1 - Hochtetraedrische amorphe kohlenstofffilme sowie verfahren und ionenstrahlquelle zur herstellung derselben - Google Patents

Hochtetraedrische amorphe kohlenstofffilme sowie verfahren und ionenstrahlquelle zur herstellung derselben

Info

Publication number
DE69733350D1
DE69733350D1 DE69733350T DE69733350T DE69733350D1 DE 69733350 D1 DE69733350 D1 DE 69733350D1 DE 69733350 T DE69733350 T DE 69733350T DE 69733350 T DE69733350 T DE 69733350T DE 69733350 D1 DE69733350 D1 DE 69733350D1
Authority
DE
Germany
Prior art keywords
carbon
diamond
amorphous carbon
turance
ion
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE69733350T
Other languages
English (en)
Other versions
DE69733350T2 (de
Inventor
Vijayen Veerasamy
Manfred Weiler
Eric Li
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
UNITED MODULE CORP., LOS ALTOS, CALIF., US
Original Assignee
Akashic Memories Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US08/761,336 external-priority patent/US5858477A/en
Application filed by Akashic Memories Corp filed Critical Akashic Memories Corp
Application granted granted Critical
Publication of DE69733350D1 publication Critical patent/DE69733350D1/de
Publication of DE69733350T2 publication Critical patent/DE69733350T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32357—Generation remote from the workpiece, e.g. down-stream
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
    • G11B5/62—Record carriers characterised by the selection of the material
    • G11B5/72—Protective coatings, e.g. anti-static or antifriction
    • G11B5/727—Inorganic carbon protective coating, e.g. graphite, diamond like carbon or doped carbon
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C17/00—Surface treatment of glass, not in the form of fibres or filaments, by coating
    • C03C17/22—Surface treatment of glass, not in the form of fibres or filaments, by coating with other inorganic material
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
    • G11B5/84—Processes or apparatus specially adapted for manufacturing record carriers
    • G11B5/8408—Processes or apparatus specially adapted for manufacturing record carriers protecting the magnetic layer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J27/00—Ion beam tubes
    • H01J27/02—Ion sources; Ion guns
    • H01J27/16—Ion sources; Ion guns using high-frequency excitation, e.g. microwave excitation
    • H01J27/18—Ion sources; Ion guns using high-frequency excitation, e.g. microwave excitation with an applied axial magnetic field
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H01J37/04—Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement or ion-optical arrangement
    • H01J37/08—Ion sources; Ion guns
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C2217/00—Coatings on glass
    • C03C2217/20—Materials for coating a single layer on glass
    • C03C2217/28—Other inorganic materials
    • C03C2217/282—Carbides, silicides
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C2218/00—Methods for coating glass
    • C03C2218/10—Deposition methods
    • C03C2218/15—Deposition methods from the vapour phase
    • C03C2218/151—Deposition methods from the vapour phase by vacuum evaporation

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Inorganic Chemistry (AREA)
  • Analytical Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Geochemistry & Mineralogy (AREA)
  • Materials Engineering (AREA)
  • Organic Chemistry (AREA)
  • Combustion & Propulsion (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Plasma & Fusion (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • General Chemical & Material Sciences (AREA)
  • Manufacturing Of Magnetic Record Carriers (AREA)
  • Magnetic Record Carriers (AREA)
  • Carbon And Carbon Compounds (AREA)
  • Physical Vapour Deposition (AREA)
  • Chemical Vapour Deposition (AREA)
  • Thin Magnetic Films (AREA)
  • Photoreceptors In Electrophotography (AREA)
  • Electron Sources, Ion Sources (AREA)
DE69733350T 1996-05-31 1997-05-29 Hochtetraedrische amorphe kohlenstofffilme sowie verfahren und ionenstrahlquelle zur herstellung derselben Expired - Lifetime DE69733350T2 (de)

Applications Claiming Priority (9)

Application Number Priority Date Filing Date Title
US1879396P 1996-05-31 1996-05-31
US1874696P 1996-05-31 1996-05-31
US18746P 1996-05-31
US18793P 1996-05-31
US76133896A 1996-12-10 1996-12-10
US761338 1996-12-10
US761336 1996-12-10
US08/761,336 US5858477A (en) 1996-12-10 1996-12-10 Method for producing recording media having protective overcoats of highly tetrahedral amorphous carbon
PCT/US1997/009393 WO1997045855A1 (en) 1996-05-31 1997-05-29 Highly tetrahedral amorphous carbon films and methods for their production

Publications (2)

Publication Number Publication Date
DE69733350D1 true DE69733350D1 (de) 2005-06-30
DE69733350T2 DE69733350T2 (de) 2006-04-27

Family

ID=27486777

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69733350T Expired - Lifetime DE69733350T2 (de) 1996-05-31 1997-05-29 Hochtetraedrische amorphe kohlenstofffilme sowie verfahren und ionenstrahlquelle zur herstellung derselben

Country Status (6)

Country Link
EP (2) EP0909445A1 (de)
JP (6) JP2000512053A (de)
AT (1) ATE296482T1 (de)
AU (2) AU3293097A (de)
DE (1) DE69733350T2 (de)
WO (2) WO1997045834A1 (de)

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AUPO613797A0 (en) * 1997-04-09 1997-05-08 University Of Sydney, The Digital information storage
US6086730A (en) * 1999-04-22 2000-07-11 Komag, Incorporated Method of sputtering a carbon protective film on a magnetic disk with high sp3 content
US6303225B1 (en) * 2000-05-24 2001-10-16 Guardian Industries Corporation Hydrophilic coating including DLC on substrate
US6338901B1 (en) * 1999-05-03 2002-01-15 Guardian Industries Corporation Hydrophobic coating including DLC on substrate
US6261693B1 (en) * 1999-05-03 2001-07-17 Guardian Industries Corporation Highly tetrahedral amorphous carbon coating on glass
US6565719B1 (en) * 2000-06-27 2003-05-20 Komag, Inc. Magnetic disk comprising a first carbon overcoat having a high SP3 content and a second carbon overcoat having a low SP3 content
US6602371B2 (en) 2001-02-27 2003-08-05 Guardian Industries Corp. Method of making a curved vehicle windshield
US6872909B2 (en) * 2003-04-16 2005-03-29 Applied Science And Technology, Inc. Toroidal low-field reactive gas and plasma source having a dielectric vacuum vessel
JP2006036611A (ja) * 2004-07-29 2006-02-09 Sumitomo Electric Ind Ltd 水素含有炭素膜
DE102004041235A1 (de) * 2004-08-26 2006-03-02 Ina-Schaeffler Kg Verschleißfeste Beschichtung und Verfahren zur Herstellung derselben
GB2417490A (en) * 2004-08-27 2006-03-01 Nanofilm Technologies Int Tetrahedral amorphous carbon coating with pre-determined resistivity
US8038850B2 (en) * 2006-06-23 2011-10-18 Qimonda Ag Sputter deposition method for forming integrated circuit
CN101663558B (zh) 2007-04-05 2011-06-22 富士通半导体股份有限公司 表面形状传感器及其制造方法
US7961427B2 (en) * 2007-05-22 2011-06-14 Galleon International Corporation High performance computer hard disk drive with a carbon overcoat and method of improving hard disk performance
US9224416B2 (en) 2012-04-24 2015-12-29 Seagate Technology Llc Near field transducers including nitride materials
US9251837B2 (en) 2012-04-25 2016-02-02 Seagate Technology Llc HAMR NFT materials with improved thermal stability
US8427925B2 (en) 2010-02-23 2013-04-23 Seagate Technology Llc HAMR NFT materials with improved thermal stability
JP5679423B2 (ja) * 2010-11-02 2015-03-04 富士電機株式会社 Ｄｌｃ薄膜製造方法および装置
JP2013037731A (ja) 2011-08-04 2013-02-21 Fuji Electric Co Ltd 記録媒体
WO2013116595A1 (en) 2012-02-03 2013-08-08 Seagate Technology Llc Methods of forming layers
WO2014120233A1 (en) * 2013-02-01 2014-08-07 Seagate Technology Llc Methods of forming layers
US8830800B1 (en) 2013-06-21 2014-09-09 Seagate Technology Llc Magnetic devices including film structures
US9280989B2 (en) 2013-06-21 2016-03-08 Seagate Technology Llc Magnetic devices including near field transducer
US9245573B2 (en) 2013-06-24 2016-01-26 Seagate Technology Llc Methods of forming materials for at least a portion of a NFT and NFTs formed using the same
US9058824B2 (en) 2013-06-24 2015-06-16 Seagate Technology Llc Devices including a gas barrier layer
US9286931B2 (en) 2013-06-24 2016-03-15 Seagate Technology Llc Materials for near field transducers and near field transducers containing same
US8976634B2 (en) 2013-06-24 2015-03-10 Seagate Technology Llc Devices including at least one intermixing layer
CN103342573B (zh) * 2013-07-10 2014-07-02 航天材料及工艺研究所 一种金刚石薄膜增强碳/碳复合材料热导率的方法
KR102111019B1 (ko) * 2013-07-12 2020-06-09 삼성디스플레이 주식회사 기상 증착 장치, 이를 이용한 증착 방법 및 유기 발광 표시 장치 제조 방법
JP5627148B1 (ja) * 2013-07-24 2014-11-19 株式会社リケン ピストンリング及びその製造方法
WO2015072843A1 (en) * 2013-11-14 2015-05-21 Fuji Electric (Malaysia) Sdn Bhd Method for manufacturing carbon-containing protective film
US9570098B2 (en) 2013-12-06 2017-02-14 Seagate Technology Llc Methods of forming near field transducers and near field transducers formed thereby
US9697856B2 (en) 2013-12-06 2017-07-04 Seagate Techology LLC Methods of forming near field transducers and near field transducers formed thereby
US9305572B2 (en) 2014-05-01 2016-04-05 Seagate Technology Llc Methods of forming portions of near field transducers (NFTS) and articles formed thereby
US9620150B2 (en) 2014-11-11 2017-04-11 Seagate Technology Llc Devices including an amorphous gas barrier layer
US9822444B2 (en) 2014-11-11 2017-11-21 Seagate Technology Llc Near-field transducer having secondary atom higher concentration at bottom of the peg
US9552833B2 (en) 2014-11-11 2017-01-24 Seagate Technology Llc Devices including a multilayer gas barrier layer
WO2016077197A1 (en) 2014-11-12 2016-05-19 Seagate Technology Llc Devices including a near field transducer (nft) with nanoparticles
US20160275972A1 (en) 2015-03-22 2016-09-22 Seagate Technology Llc Devices including metal layer
US9672848B2 (en) 2015-05-28 2017-06-06 Seagate Technology Llc Multipiece near field transducers (NFTS)
WO2016191666A1 (en) 2015-05-28 2016-12-01 Seagate Technology Llc Near field transducers (nfts) including barrier layer and methods of forming
US9852748B1 (en) 2015-12-08 2017-12-26 Seagate Technology Llc Devices including a NFT having at least one amorphous alloy layer
KR101701440B1 (ko) * 2016-06-07 2017-02-01 (주)디쉬뱅크 플라즈마 하이브리드 코팅장치를 이용한 식기류 제조방법
US9899193B1 (en) * 2016-11-02 2018-02-20 Varian Semiconductor Equipment Associates, Inc. RF ion source with dynamic volume control
WO2019013157A1 (ja) * 2017-07-10 2019-01-17 新日鐵住金株式会社 軌道部材、軸受け及び装置
WO2020161139A2 (en) * 2019-02-06 2020-08-13 Evatec Ag Method of producing ions and apparatus

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Also Published As

Publication number Publication date
JP2008120676A (ja) 2008-05-29
JP2008117521A (ja) 2008-05-22
EP0906636B1 (de) 2005-05-25
DE69733350T2 (de) 2006-04-27
AU3293097A (en) 1998-01-05
EP0906636A1 (de) 1999-04-07
EP0909445A1 (de) 1999-04-21
AU3224297A (en) 1998-01-05
JP2008123671A (ja) 2008-05-29
JP2008091022A (ja) 2008-04-17
JP2000512053A (ja) 2000-09-12
WO1997045855A1 (en) 1997-12-04
JP2008077833A (ja) 2008-04-03
WO1997045834A1 (en) 1997-12-04
ATE296482T1 (de) 2005-06-15

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Legal Events

Date Code Title Description
8327 Change in the person/name/address of the patent owner

Owner name: UNITED MODULE CORP., LOS ALTOS, CALIF., US

8364 No opposition during term of opposition