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DE69707325D1 - Bilderzeugungsmaterial und Verfahren - Google Patents

Bilderzeugungsmaterial und Verfahren

Info

Publication number
DE69707325D1
DE69707325D1 DE69707325T DE69707325T DE69707325D1 DE 69707325 D1 DE69707325 D1 DE 69707325D1 DE 69707325 T DE69707325 T DE 69707325T DE 69707325 T DE69707325 T DE 69707325T DE 69707325 D1 DE69707325 D1 DE 69707325D1
Authority
DE
Germany
Prior art keywords
imaging material
imaging
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69707325T
Other languages
English (en)
Other versions
DE69707325T2 (de
Inventor
Takahiro Matsuo
Masayuki Endo
Masamitsu Shirai
Masahiro Tsunooka
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Application granted granted Critical
Publication of DE69707325D1 publication Critical patent/DE69707325D1/de
Publication of DE69707325T2 publication Critical patent/DE69707325T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/265—Selective reaction with inorganic or organometallic reagents after image-wise exposure, e.g. silylation
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/0045—Photosensitive materials with organic non-macromolecular light-sensitive compounds not otherwise provided for, e.g. dissolution inhibitors
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Inorganic Chemistry (AREA)
  • Organic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Materials For Photolithography (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Addition Polymer Or Copolymer, Post-Treatments, Or Chemical Modifications (AREA)
DE69707325T 1996-02-26 1997-02-06 Bilderzeugungsmaterial und Verfahren Expired - Fee Related DE69707325T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP3810096 1996-02-26

Publications (2)

Publication Number Publication Date
DE69707325D1 true DE69707325D1 (de) 2001-11-22
DE69707325T2 DE69707325T2 (de) 2002-05-02

Family

ID=12516064

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69707325T Expired - Fee Related DE69707325T2 (de) 1996-02-26 1997-02-06 Bilderzeugungsmaterial und Verfahren

Country Status (4)

Country Link
US (6) US5965325A (de)
EP (2) EP0791856B1 (de)
KR (1) KR970063430A (de)
DE (1) DE69707325T2 (de)

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* Cited by examiner, † Cited by third party
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US6017683A (en) * 1997-02-20 2000-01-25 Matsushita Electric Industrial Co., Ltd. Pattern forming material and pattern forming method
US5949768A (en) * 1997-04-02 1999-09-07 Zenith Electronics Corporation Two tier adaptive random access protocol
JP3383838B2 (ja) * 1999-02-25 2003-03-10 独立行政法人産業技術総合研究所 金属酸化物の製造方法及び微細パターンの形成方法
US6608758B1 (en) * 2000-09-07 2003-08-19 International Business Machines Corporation Chassis shielding system
US7008749B2 (en) * 2001-03-12 2006-03-07 The University Of North Carolina At Charlotte High resolution resists for next generation lithographies
TW589514B (en) * 2001-09-13 2004-06-01 Matsushita Electric Ind Co Ltd Pattern formation material and pattern formation method
TWI278012B (en) 2001-09-13 2007-04-01 Matsushita Electric Ind Co Ltd Pattern forming material and method of pattern formation
US7776505B2 (en) * 2001-11-05 2010-08-17 The University Of North Carolina At Charlotte High resolution resists for next generation lithographies
US7049044B2 (en) * 2002-12-19 2006-05-23 The University Of North Carolina At Charlotte Nanocomposite negative resists for next generation lithographies
US20030129538A1 (en) * 2002-01-09 2003-07-10 Macronix International Co., Ltd. Method for eliminating corner round profile of the RELACS process
US6551938B1 (en) * 2002-01-25 2003-04-22 Taiwon Semiconductor Manufacturing Company N2/H2 chemistry for dry development in top surface imaging technology
US20030190527A1 (en) * 2002-04-03 2003-10-09 James Pugh Batteries comprising alkali-transition metal phosphates and preferred electrolytes
US6720256B1 (en) 2002-12-04 2004-04-13 Taiwan Semiconductor Manufacturing Company Method of dual damascene patterning
US8119392B2 (en) * 2003-05-02 2012-02-21 The University Of North Carolina At Charlotte Biocompatible resists
JP4084712B2 (ja) * 2003-06-23 2008-04-30 松下電器産業株式会社 パターン形成方法
US8083953B2 (en) 2007-03-06 2011-12-27 Micron Technology, Inc. Registered structure formation via the application of directed thermal energy to diblock copolymer films
US8557128B2 (en) 2007-03-22 2013-10-15 Micron Technology, Inc. Sub-10 nm line features via rapid graphoepitaxial self-assembly of amphiphilic monolayers
US8294139B2 (en) 2007-06-21 2012-10-23 Micron Technology, Inc. Multilayer antireflection coatings, structures and devices including the same and methods of making the same
US7959975B2 (en) * 2007-04-18 2011-06-14 Micron Technology, Inc. Methods of patterning a substrate
US8097175B2 (en) * 2008-10-28 2012-01-17 Micron Technology, Inc. Method for selectively permeating a self-assembled block copolymer, method for forming metal oxide structures, method for forming a metal oxide pattern, and method for patterning a semiconductor structure
US8372295B2 (en) 2007-04-20 2013-02-12 Micron Technology, Inc. Extensions of self-assembled structures to increased dimensions via a “bootstrap” self-templating method
US8404124B2 (en) 2007-06-12 2013-03-26 Micron Technology, Inc. Alternating self-assembling morphologies of diblock copolymers controlled by variations in surfaces
US8080615B2 (en) 2007-06-19 2011-12-20 Micron Technology, Inc. Crosslinkable graft polymer non-preferentially wetted by polystyrene and polyethylene oxide
US8999492B2 (en) 2008-02-05 2015-04-07 Micron Technology, Inc. Method to produce nanometer-sized features with directed assembly of block copolymers
US8101261B2 (en) 2008-02-13 2012-01-24 Micron Technology, Inc. One-dimensional arrays of block copolymer cylinders and applications thereof
US8425982B2 (en) 2008-03-21 2013-04-23 Micron Technology, Inc. Methods of improving long range order in self-assembly of block copolymer films with ionic liquids
US8426313B2 (en) 2008-03-21 2013-04-23 Micron Technology, Inc. Thermal anneal of block copolymer films with top interface constrained to wet both blocks with equal preference
US8114301B2 (en) 2008-05-02 2012-02-14 Micron Technology, Inc. Graphoepitaxial self-assembly of arrays of downward facing half-cylinders
JP5237173B2 (ja) * 2008-06-03 2013-07-17 信越化学工業株式会社 重合性化合物、高分子化合物及びポジ型レジスト材料並びにこれを用いたパターン形成方法
WO2009152276A2 (en) * 2008-06-10 2009-12-17 University Of North Carolina At Charlotte Photoacid generators and lithographic resists comprising the same
JP5171422B2 (ja) * 2008-06-19 2013-03-27 ルネサスエレクトロニクス株式会社 感光性組成物、これを用いたパターン形成方法、半導体素子の製造方法
TWI526456B (zh) * 2009-10-15 2016-03-21 住友化學股份有限公司 光阻組合物
TWI499863B (zh) * 2010-01-12 2015-09-11 Sumitomo Chemical Co 光阻組成物
US8900963B2 (en) 2011-11-02 2014-12-02 Micron Technology, Inc. Methods of forming semiconductor device structures, and related structures
US9087699B2 (en) 2012-10-05 2015-07-21 Micron Technology, Inc. Methods of forming an array of openings in a substrate, and related methods of forming a semiconductor device structure
US9229328B2 (en) 2013-05-02 2016-01-05 Micron Technology, Inc. Methods of forming semiconductor device structures, and related semiconductor device structures
US9177795B2 (en) 2013-09-27 2015-11-03 Micron Technology, Inc. Methods of forming nanostructures including metal oxides
JP5926753B2 (ja) * 2014-02-26 2016-05-25 東京エレクトロン株式会社 基板処理方法、プログラム、コンピュータ記憶媒体及び基板処理システム

Family Cites Families (26)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
BE549814A (de) * 1955-07-29
GB1180845A (en) * 1967-08-08 1970-02-11 Agfa Gevaert Nv Light-Sensitive Polymers and their use in the preparation of Photographic Printing Plates
GB1458355A (en) * 1973-01-31 1976-12-15 Agfa Gevaert Recording processes and materials containing a photo-and or thermo-sensitive amine progenitor
JPS5893047A (ja) 1981-11-27 1983-06-02 Matsushita Electric Ind Co Ltd ポジ型遠紫外線レジスト
JPS5893048A (ja) 1981-11-27 1983-06-02 Matsushita Electric Ind Co Ltd ポジ型放射線レジスト
GB8608528D0 (en) 1986-04-08 1986-05-14 Ciba Geigy Ag Production of positive images
JP2653072B2 (ja) 1987-12-07 1997-09-10 松下電器産業株式会社 パターン形成方法
US4775609A (en) * 1987-05-18 1988-10-04 Hoescht Celanese Corporation Image reversal
US4869995A (en) * 1987-05-28 1989-09-26 Nippon Paint Co., Ltd. Positive type photosensitive resinous composition
JP2594112B2 (ja) 1987-05-28 1997-03-26 日本ペイント株式会社 ポジ型感光性樹脂組成物
US5015559A (en) 1988-07-26 1991-05-14 Matsushita Electric Industrial Co., Ltd. Process for forming a fine resist pattern
GB8918161D0 (en) * 1989-08-09 1989-09-20 Du Pont Improvements in or relating to radiation sensitive compounds
US5650261A (en) * 1989-10-27 1997-07-22 Rohm And Haas Company Positive acting photoresist comprising a photoacid, a photobase and a film forming acid-hardening resin system
JP2645384B2 (ja) * 1990-05-21 1997-08-25 日本ペイント株式会社 ポジ型感光性樹脂組成物
JPH04142541A (ja) 1990-10-04 1992-05-15 Dainippon Printing Co Ltd 電離放射線感応ネガ型レジスト
JPH04253060A (ja) 1991-01-10 1992-09-08 Dainippon Printing Co Ltd 電離放射線感応ネガ型レジスト
JPH05150459A (ja) * 1991-05-24 1993-06-18 Nippon Paint Co Ltd レジストパターンの形成方法
JPH0627668A (ja) 1992-07-08 1994-02-04 Dainippon Printing Co Ltd 電離放射線感応ネガ型レジスト
JP2654339B2 (ja) * 1992-11-24 1997-09-17 インターナショナル・ビジネス・マシーンズ・コーポレイション 感光性レジスト組成物及び基板上にレジスト像を形成する方法
JPH06250393A (ja) 1993-03-02 1994-09-09 Matsushita Electric Ind Co Ltd 新規レジストおよび新規レジストを用いたパターン形成方法
JPH07261393A (ja) 1994-03-25 1995-10-13 Toshiba Corp ネガ型レジスト組成物
KR0174316B1 (ko) * 1994-07-05 1999-04-01 모리시다 요이치 미세패턴 형성방법
JP2656913B2 (ja) 1994-07-05 1997-09-24 松下電器産業株式会社 微細パターン形成方法
JPH08328265A (ja) 1995-05-31 1996-12-13 Matsushita Electric Ind Co Ltd 微細パターン形成方法
JPH09189998A (ja) 1995-11-10 1997-07-22 Matsushita Electric Ind Co Ltd パターン形成材料及びパターン形成方法
US6017683A (en) * 1997-02-20 2000-01-25 Matsushita Electric Industrial Co., Ltd. Pattern forming material and pattern forming method

Also Published As

Publication number Publication date
EP0791856A2 (de) 1997-08-27
US20010034000A1 (en) 2001-10-25
US6376154B2 (en) 2002-04-23
DE69707325T2 (de) 2002-05-02
US20010036599A1 (en) 2001-11-01
US6387592B2 (en) 2002-05-14
US6120974A (en) 2000-09-19
EP0791856A3 (de) 1998-01-14
US6306556B1 (en) 2001-10-23
EP1124158A1 (de) 2001-08-16
EP0791856B1 (de) 2001-10-17
US5965325A (en) 1999-10-12
KR970063430A (ko) 1997-09-12
US20010024768A1 (en) 2001-09-27
US6387598B2 (en) 2002-05-14

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee