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DE69707579D1 - Stromabfühlschaltung - Google Patents

Stromabfühlschaltung

Info

Publication number
DE69707579D1
DE69707579D1 DE69707579T DE69707579T DE69707579D1 DE 69707579 D1 DE69707579 D1 DE 69707579D1 DE 69707579 T DE69707579 T DE 69707579T DE 69707579 T DE69707579 T DE 69707579T DE 69707579 D1 DE69707579 D1 DE 69707579D1
Authority
DE
Germany
Prior art keywords
sensing circuit
current sensing
current
circuit
sensing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69707579T
Other languages
English (en)
Other versions
DE69707579T2 (de
Inventor
Michael John Gay
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NXP USA Inc
Original Assignee
Motorola Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Motorola Inc filed Critical Motorola Inc
Publication of DE69707579D1 publication Critical patent/DE69707579D1/de
Application granted granted Critical
Publication of DE69707579T2 publication Critical patent/DE69707579T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/34—DC amplifiers in which all stages are DC-coupled
    • H03F3/343—DC amplifiers in which all stages are DC-coupled with semiconductor devices only
    • H03F3/345—DC amplifiers in which all stages are DC-coupled with semiconductor devices only with field-effect devices

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Amplifiers (AREA)
  • Measurement Of Current Or Voltage (AREA)
DE69707579T 1996-07-10 1997-07-02 Stromabfühlschaltung Expired - Fee Related DE69707579T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
GB9614524A GB2315176A (en) 1996-07-10 1996-07-10 Current sense arrangement for an FET using a transistor as a sensing element

Publications (2)

Publication Number Publication Date
DE69707579D1 true DE69707579D1 (de) 2001-11-29
DE69707579T2 DE69707579T2 (de) 2002-06-27

Family

ID=10796703

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69707579T Expired - Fee Related DE69707579T2 (de) 1996-07-10 1997-07-02 Stromabfühlschaltung

Country Status (5)

Country Link
US (1) US5900776A (de)
EP (1) EP0818878B1 (de)
JP (1) JP3626985B2 (de)
DE (1) DE69707579T2 (de)
GB (1) GB2315176A (de)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8232781B2 (en) * 2008-12-23 2012-07-31 Stmicroelectronics S.R.L. Device for measuring the current flowing through a power transistor of a voltage regulator
JP5666694B2 (ja) * 2011-04-05 2015-02-12 ルネサスエレクトロニクス株式会社 負荷電流検出回路

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4010425A (en) * 1975-10-02 1977-03-01 Rca Corporation Current mirror amplifier
US4896121A (en) * 1988-10-31 1990-01-23 Hughes Aircraft Company Current mirror for depletion-mode field effect transistor technology
ES2112895T3 (es) * 1992-06-16 1998-04-16 Sgs Thomson Microelectronics Circuito para controlar la corriente maxima en un transistor mos de potencia utilizado para excitar una carga conectada a tierra.
US5394079A (en) * 1993-04-27 1995-02-28 National Semiconductor Corporation Current mirror with improved input voltage headroom
US5337021A (en) * 1993-06-14 1994-08-09 Delco Electronics Corp. High density integrated circuit with high output impedance
JP3436971B2 (ja) * 1994-06-03 2003-08-18 三菱電機株式会社 電圧制御型電流源およびそれを用いたバイアス発生回路
US5525927A (en) * 1995-02-06 1996-06-11 Texas Instruments Incorporated MOS current mirror capable of operating in the triode region with minimum output drain-to source voltage
US5617056A (en) * 1995-07-05 1997-04-01 Motorola, Inc. Base current compensation circuit

Also Published As

Publication number Publication date
US5900776A (en) 1999-05-04
GB9614524D0 (en) 1996-09-04
JPH1090312A (ja) 1998-04-10
JP3626985B2 (ja) 2005-03-09
DE69707579T2 (de) 2002-06-27
GB2315176A (en) 1998-01-21
EP0818878A1 (de) 1998-01-14
EP0818878B1 (de) 2001-10-24

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Legal Events

Date Code Title Description
8328 Change in the person/name/address of the agent

Free format text: SCHUMACHER & WILLSAU, PATENTANWALTSSOZIETAET, 80335 MUENCHEN

8364 No opposition during term of opposition
8327 Change in the person/name/address of the patent owner

Owner name: FREESCALE SEMICONDUCTOR, INC., AUSTIN, TEX., US

8339 Ceased/non-payment of the annual fee