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DE69622915D1 - Halbleiterschaltvorrichtung - Google Patents

Halbleiterschaltvorrichtung

Info

Publication number
DE69622915D1
DE69622915D1 DE69622915T DE69622915T DE69622915D1 DE 69622915 D1 DE69622915 D1 DE 69622915D1 DE 69622915 T DE69622915 T DE 69622915T DE 69622915 T DE69622915 T DE 69622915T DE 69622915 D1 DE69622915 D1 DE 69622915D1
Authority
DE
Germany
Prior art keywords
switching device
semiconductor switching
semiconductor
switching
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE69622915T
Other languages
English (en)
Inventor
Gourab Majumdar
Shinji Hatae
Masayuki Koura
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Application granted granted Critical
Publication of DE69622915D1 publication Critical patent/DE69622915D1/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03KPULSE TECHNIQUE
    • H03K17/00Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/51Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
    • H03K17/56Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
    • H03K17/567Circuits characterised by the use of more than one type of semiconductor device, e.g. BIMOS, composite devices such as IGBT
    • HELECTRICITY
    • H02GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02MAPPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
    • H02M7/00Conversion of ac power input into dc power output; Conversion of dc power input into ac power output
    • H02M7/42Conversion of dc power input into ac power output without possibility of reversal
    • H02M7/44Conversion of dc power input into ac power output without possibility of reversal by static converters
    • H02M7/48Conversion of dc power input into ac power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode
    • H02M7/53Conversion of dc power input into ac power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal
    • H02M7/537Conversion of dc power input into ac power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only, e.g. single switched pulse inverters
    • H02M7/538Conversion of dc power input into ac power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only, e.g. single switched pulse inverters in a push-pull configuration

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Inverter Devices (AREA)
  • Electronic Switches (AREA)
  • Power Conversion In General (AREA)
DE69622915T 1995-04-28 1996-04-10 Halbleiterschaltvorrichtung Expired - Lifetime DE69622915D1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP7105282A JPH08308253A (ja) 1995-04-28 1995-04-28 スイッチング半導体装置

Publications (1)

Publication Number Publication Date
DE69622915D1 true DE69622915D1 (de) 2002-09-19

Family

ID=14403326

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69622915T Expired - Lifetime DE69622915D1 (de) 1995-04-28 1996-04-10 Halbleiterschaltvorrichtung

Country Status (4)

Country Link
US (1) US5686859A (de)
EP (1) EP0740406B1 (de)
JP (1) JPH08308253A (de)
DE (1) DE69622915D1 (de)

Families Citing this family (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW405295B (en) * 1995-10-10 2000-09-11 Int Rectifier Corp High voltage drivers which avoid -Vs fallure modes
US6078205A (en) * 1997-03-27 2000-06-20 Hitachi, Ltd. Circuit device, drive circuit, and display apparatus including these components
JP3421020B2 (ja) 1999-06-29 2003-06-30 三菱電機株式会社 電力変換装置
IT1318794B1 (it) * 2000-08-29 2003-09-10 St Microelectronics Srl Circuito per il pilotaggio di un interruttore di potenza.
IT1318818B1 (it) * 2000-09-05 2003-09-10 St Microelectronics Srl Circuito di pilotaggio di elementi di potenza a fronte controllato
DE10049774C2 (de) * 2000-09-29 2002-11-07 Infineon Technologies Ag Gegentaktendstufe für digitale Signale mit geregelten Ausgangspegeln
JP4313658B2 (ja) * 2003-11-28 2009-08-12 三菱電機株式会社 インバータ回路
KR100704481B1 (ko) * 2005-01-06 2007-04-10 엘지전자 주식회사 모터 구동 제어장치
US7844030B2 (en) * 2008-03-26 2010-11-30 General Electric Company System and method of fast switching for spectral imaging
JP5318692B2 (ja) * 2009-08-04 2013-10-16 住友重機械工業株式会社 電力変換装置
EP2550739A1 (de) * 2010-03-24 2013-01-30 Koninklijke Philips Electronics N.V. Schaltkreis zur umschaltung elektrischer potentiale
DE102010046427A1 (de) * 2010-09-23 2011-12-08 Volkswagen Ag Verfahren und Vorrichtung zur Leistungsübertragung in Treiberschaltungen
JP6089494B2 (ja) * 2012-08-21 2017-03-08 株式会社豊田中央研究所 電力変換装置
JP6079407B2 (ja) * 2013-04-22 2017-02-15 富士電機株式会社 マルチレベル変換回路
US10361023B2 (en) 2014-08-07 2019-07-23 Nvidia Corporation Magnetic power coupling to an integrated circuit module
JP2020018037A (ja) 2018-07-23 2020-01-30 株式会社デンソー パワー素子駆動装置
US11909302B2 (en) * 2021-03-12 2024-02-20 Ge Infrastructure Technology Llc Active neutral point clamped switch sequence for parasitic inductance control of a power conversion assembly

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1538099B2 (de) * 1965-08-28 1971-12-30 Siemens AG, 1000 Berlin u. 8000 München Anordnung zur zuendung eines elektrischen ventils insbesondere eines thyristors
SE360228B (de) * 1972-02-01 1973-09-17 Asea Ab
US4527228A (en) * 1983-09-19 1985-07-02 Chi Yu Simon S Wide band full duty cycle isolated transformer driver
US5055721A (en) * 1989-04-13 1991-10-08 Mitsubishi Denki Kabushiki Kaisha Drive circuit for igbt device
US5543740A (en) * 1995-04-10 1996-08-06 Philips Electronics North America Corporation Integrated half-bridge driver circuit

Also Published As

Publication number Publication date
US5686859A (en) 1997-11-11
JPH08308253A (ja) 1996-11-22
EP0740406A2 (de) 1996-10-30
EP0740406A3 (de) 1997-11-05
EP0740406B1 (de) 2002-08-14

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Legal Events

Date Code Title Description
8332 No legal effect for de