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DE69535391D1 - Mehrlagenschaltungssubstrat - Google Patents

Mehrlagenschaltungssubstrat

Info

Publication number
DE69535391D1
DE69535391D1 DE69535391T DE69535391T DE69535391D1 DE 69535391 D1 DE69535391 D1 DE 69535391D1 DE 69535391 T DE69535391 T DE 69535391T DE 69535391 T DE69535391 T DE 69535391T DE 69535391 D1 DE69535391 D1 DE 69535391D1
Authority
DE
Germany
Prior art keywords
circuit substrate
layer circuit
layer
substrate
circuit
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69535391T
Other languages
English (en)
Other versions
DE69535391T2 (de
Inventor
Hirayoshi Tanei
Shoichi Iwanaga
Masahide Okamoto
Masato Nakamura
Kousaku Morita
Shousaku Ishihara
Fumiyuki Kobayashi
Fumikazu Tagami
Norio Sengoku
Tsuyoshi Fujita
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Publication of DE69535391D1 publication Critical patent/DE69535391D1/de
Application granted granted Critical
Publication of DE69535391T2 publication Critical patent/DE69535391T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C14/00—Glass compositions containing a non-glass component, e.g. compositions containing fibres, filaments, whiskers, platelets, or the like, dispersed in a glass matrix
    • C03C14/004—Glass compositions containing a non-glass component, e.g. compositions containing fibres, filaments, whiskers, platelets, or the like, dispersed in a glass matrix the non-glass component being in the form of particles or flakes
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C17/00—Surface treatment of glass, not in the form of fibres or filaments, by coating
    • C03C17/06—Surface treatment of glass, not in the form of fibres or filaments, by coating with metals
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C3/00—Glass compositions
    • C03C3/04—Glass compositions containing silica
    • C03C3/076—Glass compositions containing silica with 40% to 90% silica, by weight
    • C03C3/089—Glass compositions containing silica with 40% to 90% silica, by weight containing boron
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C8/00—Enamels; Glazes; Fusion seal compositions being frit compositions having non-frit additions
    • C03C8/14—Glass frit mixtures having non-frit additions, e.g. opacifiers, colorants, mill-additions
    • C03C8/16—Glass frit mixtures having non-frit additions, e.g. opacifiers, colorants, mill-additions with vehicle or suspending agents, e.g. slip
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/48—Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the subgroups H01L21/06 - H01L21/326
    • H01L21/4803—Insulating or insulated parts, e.g. mountings, containers, diamond heatsinks
    • H01L21/4807—Ceramic parts
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/12—Mountings, e.g. non-detachable insulating substrates
    • H01L23/14—Mountings, e.g. non-detachable insulating substrates characterised by the material or its electrical properties
    • H01L23/15—Ceramic or glass substrates
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C2217/00—Coatings on glass
    • C03C2217/20—Materials for coating a single layer on glass
    • C03C2217/25—Metals
    • C03C2217/251—Al, Cu, Mg or noble metals
    • C03C2217/253—Cu
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
    • H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
    • H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
    • H01L2224/161—Disposition
    • H01L2224/16151—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/16221—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/16225—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H01L2224/16235—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation the bump connector connecting to a via metallisation of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01012—Magnesium [Mg]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01019—Potassium [K]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01078—Platinum [Pt]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/095—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00 with a principal constituent of the material being a combination of two or more materials provided in the groups H01L2924/013 - H01L2924/0715
    • H01L2924/097—Glass-ceramics, e.g. devitrified glass
    • H01L2924/09701—Low temperature co-fired ceramic [LTCC]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/151—Die mounting substrate
    • H01L2924/153—Connection portion
    • H01L2924/1531—Connection portion the connection portion being formed only on the surface of the substrate opposite to the die mounting surface
    • H01L2924/15312—Connection portion the connection portion being formed only on the surface of the substrate opposite to the die mounting surface being a pin array, e.g. PGA
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/151—Die mounting substrate
    • H01L2924/156—Material
    • H01L2924/15786—Material with a principal constituent of the material being a non metallic, non metalloid inorganic material
    • H01L2924/15787—Ceramics, e.g. crystalline carbides, nitrides or oxides
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K1/00—Printed circuits
    • H05K1/02—Details
    • H05K1/03—Use of materials for the substrate
    • H05K1/0306—Inorganic insulating substrates, e.g. ceramic, glass
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00—Apparatus or processes for manufacturing printed circuits
    • H05K3/46—Manufacturing multilayer circuits
    • H05K3/4611—Manufacturing multilayer circuits by laminating two or more circuit boards
    • H05K3/4626—Manufacturing multilayer circuits by laminating two or more circuit boards characterised by the insulating layers or materials
    • H05K3/4629—Manufacturing multilayer circuits by laminating two or more circuit boards characterised by the insulating layers or materials laminating inorganic sheets comprising printed circuits, e.g. green ceramic sheets
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S428/00—Stock material or miscellaneous articles
    • Y10S428/901—Printed circuit

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Organic Chemistry (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Geochemistry & Mineralogy (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Dispersion Chemistry (AREA)
  • Manufacturing & Machinery (AREA)
  • Glass Compositions (AREA)
  • Compositions Of Oxide Ceramics (AREA)
DE69535391T 1994-08-19 1995-07-27 Mehrlagenschaltungssubstrat Expired - Fee Related DE69535391T2 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP19580694 1994-08-19
JP19580694 1994-08-19

Publications (2)

Publication Number Publication Date
DE69535391D1 true DE69535391D1 (de) 2007-03-29
DE69535391T2 DE69535391T2 (de) 2007-10-31

Family

ID=16347298

Family Applications (2)

Application Number Title Priority Date Filing Date
DE69528868T Expired - Fee Related DE69528868T2 (de) 1994-08-19 1995-07-27 Keramikzusammensetzung für Schaltungssubstrat und seine Herstellung
DE69535391T Expired - Fee Related DE69535391T2 (de) 1994-08-19 1995-07-27 Mehrlagenschaltungssubstrat

Family Applications Before (1)

Application Number Title Priority Date Filing Date
DE69528868T Expired - Fee Related DE69528868T2 (de) 1994-08-19 1995-07-27 Keramikzusammensetzung für Schaltungssubstrat und seine Herstellung

Country Status (3)

Country Link
US (2) US5825632A (de)
EP (2) EP1083600B1 (de)
DE (2) DE69528868T2 (de)

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DE69528868T2 (de) * 1994-08-19 2003-03-27 Hitachi, Ltd. Keramikzusammensetzung für Schaltungssubstrat und seine Herstellung
JP3860336B2 (ja) * 1998-04-28 2006-12-20 日本特殊陶業株式会社 ガラスセラミック複合体
US6288344B1 (en) * 1999-08-20 2001-09-11 Cardiac Pacemakers, Inc. Integrated EMI shield utilizing a hybrid edge
US6444921B1 (en) * 2000-02-03 2002-09-03 Fujitsu Limited Reduced stress and zero stress interposers for integrated-circuit chips, multichip substrates, and the like
JP2001244376A (ja) * 2000-02-28 2001-09-07 Hitachi Ltd 半導体装置
JP3531573B2 (ja) * 2000-03-17 2004-05-31 株式会社村田製作所 積層型セラミック電子部品およびその製造方法ならびに電子装置
JP2001332859A (ja) * 2000-05-22 2001-11-30 Murata Mfg Co Ltd 積層型セラミック電子部品およびその製造方法ならびに電子装置
JP3407716B2 (ja) * 2000-06-08 2003-05-19 株式会社村田製作所 複合積層電子部品
US20030170436A1 (en) * 2001-12-25 2003-09-11 Ngk Spark Plug Co., Ltd. Dielectric material and dielectric sintered body, and wiring board using the same
DE10215654A1 (de) * 2002-04-09 2003-11-06 Infineon Technologies Ag Elektronisches Bauteil mit mindestens einem Halbleiterchip und Flip-Chip-Kontakten sowie Verfahren zu seiner Herstellung
KR20030074582A (ko) * 2003-09-03 2003-09-19 학교법인 한국정보통신학원 초고주파 다층회로 구조 및 제작 방법
US7919804B2 (en) * 2005-11-08 2011-04-05 Oracle America, Inc. Power distribution for high-speed integrated circuits
US9233253B2 (en) 2012-01-16 2016-01-12 Greatbatch Ltd. EMI filtered co-connected hermetic feedthrough, feedthrough capacitor and leadwire assembly for an active implantable medical device
KR101555379B1 (ko) * 2008-06-30 2015-09-23 니혼도꾸슈도교 가부시키가이샤 전기검사용 기판 및 그 제조방법
US11198014B2 (en) 2011-03-01 2021-12-14 Greatbatch Ltd. Hermetically sealed filtered feedthrough assembly having a capacitor with an oxide resistant electrical connection to an active implantable medical device housing
US10596369B2 (en) 2011-03-01 2020-03-24 Greatbatch Ltd. Low equivalent series resistance RF filter for an active implantable medical device
US10046166B2 (en) 2012-01-16 2018-08-14 Greatbatch Ltd. EMI filtered co-connected hermetic feedthrough, feedthrough capacitor and leadwire assembly for an active implantable medical device
US10881867B2 (en) 2012-01-16 2021-01-05 Greatbatch Ltd. Method for providing a hermetically sealed feedthrough with co-fired filled via for an active implantable medical device
US9889306B2 (en) 2012-01-16 2018-02-13 Greatbatch Ltd. Hermetically sealed feedthrough with co-fired filled via and conductive insert for an active implantable medical device
US10420949B2 (en) 2012-01-16 2019-09-24 Greatbatch Ltd. Method of manufacturing a feedthrough insulator for an active implantable medical device incorporating a post conductive paste filled pressing step
US20130229777A1 (en) * 2012-03-01 2013-09-05 Infineon Technologies Ag Chip arrangements and methods for forming a chip arrangement
USRE46699E1 (en) 2013-01-16 2018-02-06 Greatbatch Ltd. Low impedance oxide resistant grounded capacitor for an AIMD
WO2018083830A1 (ja) 2016-11-02 2018-05-11 株式会社村田製作所 セラミック電子部品及びセラミック電子部品の製造方法
US10249415B2 (en) 2017-01-06 2019-04-02 Greatbatch Ltd. Process for manufacturing a leadless feedthrough for an active implantable medical device
JP2019060817A (ja) * 2017-09-28 2019-04-18 日本特殊陶業株式会社 電子部品検査装置用配線基板
CN115866936B (zh) * 2023-03-01 2023-05-30 四川斯艾普电子科技有限公司 一种采用厚薄膜工艺实现多层电路板的方法

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Also Published As

Publication number Publication date
DE69528868D1 (de) 2003-01-02
EP1083600A2 (de) 2001-03-14
US6118671A (en) 2000-09-12
EP0697725A2 (de) 1996-02-21
DE69528868T2 (de) 2003-03-27
EP1083600A3 (de) 2005-05-25
EP0697725B1 (de) 2002-11-20
EP1083600B1 (de) 2007-02-14
DE69535391T2 (de) 2007-10-31
US5825632A (en) 1998-10-20
EP0697725A3 (de) 1997-02-19

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee