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DE68928448D1 - Halbleitervorrichtung und Herstellungsverfahren - Google Patents

Halbleitervorrichtung und Herstellungsverfahren

Info

Publication number
DE68928448D1
DE68928448D1 DE68928448T DE68928448T DE68928448D1 DE 68928448 D1 DE68928448 D1 DE 68928448D1 DE 68928448 T DE68928448 T DE 68928448T DE 68928448 T DE68928448 T DE 68928448T DE 68928448 D1 DE68928448 D1 DE 68928448D1
Authority
DE
Germany
Prior art keywords
manufacturing
semiconductor device
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE68928448T
Other languages
English (en)
Other versions
DE68928448T2 (de
Inventor
Jin Onuki
Yasushi Koubuchi
Shinichi Fukada
Katuhiko Shiota
Kunio Miyazaki
Tatsuo Itagaki
Genji Taki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP63059451A external-priority patent/JPH01233737A/ja
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Publication of DE68928448D1 publication Critical patent/DE68928448D1/de
Application granted granted Critical
Publication of DE68928448T2 publication Critical patent/DE68928448T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
    • H01L21/76886—Modifying permanently or temporarily the pattern or the conductivity of conductive members, e.g. formation of alloys, reduction of contact resistances
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
    • H01L21/285—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
    • H01L21/28506—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers
    • H01L21/28512—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table
    • H01L21/28518—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table the conductive layers comprising silicides
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    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H01L21/321—After treatment
    • H01L21/3213—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer
    • H01L21/32133—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only
    • H01L21/32135—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by vapour etching only
    • H01L21/32136—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by vapour etching only using plasmas
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    • H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
    • H01L21/60—Attaching or detaching leads or other conductive members, to be used for carrying current to or from the device in operation
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    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
    • H01L21/76886—Modifying permanently or temporarily the pattern or the conductivity of conductive members, e.g. formation of alloys, reduction of contact resistances
    • H01L21/76888—By rendering at least a portion of the conductor non conductive, e.g. oxidation
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    • H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
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    • H01L23/53214—Conductive materials based on metals, e.g. alloys, metal silicides the principal metal being aluminium
    • H01L23/53223—Additional layers associated with aluminium layers, e.g. adhesion, barrier, cladding layers
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    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
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    • H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/32245—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
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    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45117—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 400°C and less than 950°C
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    • H01L2224/732—Location after the connecting process
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    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/181—Encapsulation
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
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    • Y10T428/12—All metal or with adjacent metals
    • Y10T428/12493—Composite; i.e., plural, adjacent, spatially distinct metal components [e.g., layers, joint, etc.]
    • Y10T428/12528—Semiconductor component
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
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    • Y10T428/12535—Composite; i.e., plural, adjacent, spatially distinct metal components [e.g., layers, joint, etc.] with additional, spatially distinct nonmetal component
    • Y10T428/12611—Oxide-containing component
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
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    • Y10T428/12535—Composite; i.e., plural, adjacent, spatially distinct metal components [e.g., layers, joint, etc.] with additional, spatially distinct nonmetal component
    • Y10T428/12625—Free carbon containing component

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
DE68928448T 1988-01-20 1989-01-19 Halbleitervorrichtung und Herstellungsverfahren Expired - Fee Related DE68928448T2 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP834988 1988-01-20
JP63059451A JPH01233737A (ja) 1988-03-15 1988-03-15 集積回路装置及びその製造方法並びに該装置における配線膜を製造するためのターゲット

Publications (2)

Publication Number Publication Date
DE68928448D1 true DE68928448D1 (de) 1998-01-02
DE68928448T2 DE68928448T2 (de) 1998-03-12

Family

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Family Applications (1)

Application Number Title Priority Date Filing Date
DE68928448T Expired - Fee Related DE68928448T2 (de) 1988-01-20 1989-01-19 Halbleitervorrichtung und Herstellungsverfahren

Country Status (4)

Country Link
US (1) US5019891A (de)
EP (1) EP0326018B1 (de)
KR (1) KR0132786B1 (de)
DE (1) DE68928448T2 (de)

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EP0256557B1 (de) * 1986-08-19 1993-01-07 Fujitsu Limited Halbleiteranordnung mit einer Dünnschicht-Verdrahtung und Verfahren zum Herstellen derselben
US5243221A (en) * 1989-10-25 1993-09-07 At&T Bell Laboratories Aluminum metallization doped with iron and copper to prevent electromigration
JP2891432B2 (ja) * 1989-12-27 1999-05-17 田中電子工業株式会社 半導体材料の接続方法，それに用いる接続材料及び半導体装置
KR940008936B1 (ko) * 1990-02-15 1994-09-28 가부시끼가이샤 도시바 고순도 금속재와 그 성질을 이용한 반도체 장치 및 그 제조방법
US5173354A (en) * 1990-12-13 1992-12-22 Cornell Research Foundation, Inc. Non-beading, thin-film, metal-coated ceramic substrate
US5500301A (en) 1991-03-07 1996-03-19 Kabushiki Kaisha Kobe Seiko Sho A1 alloy films and melting A1 alloy sputtering targets for depositing A1 alloy films
US5565378A (en) * 1992-02-17 1996-10-15 Mitsubishi Denki Kabushiki Kaisha Process of passivating a semiconductor device bonding pad by immersion in O2 or O3 solution
TW232079B (de) * 1992-03-17 1994-10-11 Wisconsin Alumni Res Found
DE69333966T2 (de) * 1992-08-27 2006-09-14 Kabushiki Kaisha Toshiba, Kawasaki Elektronisches Bauteil mit metallischen Leiterbahnen und Verfahren zu seiner Herstellung
US5709958A (en) * 1992-08-27 1998-01-20 Kabushiki Kaisha Toshiba Electronic parts
US6001461A (en) * 1992-08-27 1999-12-14 Kabushiki Kaisha Toshiba Electronic parts and manufacturing method thereof
KR0131179B1 (ko) * 1993-02-22 1998-04-14 슌뻬이 야마자끼 전자회로 제조프로세스
US5448113A (en) * 1993-03-08 1995-09-05 Ricoh Company, Ltd. Micro metal-wiring structure having stress induced migration resistance
JPH0737706A (ja) * 1993-07-19 1995-02-07 Murata Mfg Co Ltd 半導体セラミック素子
DE4337209A1 (de) * 1993-10-30 1995-05-04 Abb Management Ag Abschaltbarer Thyristor
US5434104A (en) * 1994-03-02 1995-07-18 Vlsi Technology, Inc. Method of using corrosion prohibiters in aluminum alloy films
US5711858A (en) * 1994-04-12 1998-01-27 International Business Machines Corporation Process for depositing a conductive thin film upon an integrated circuit substrate
KR960028689A (ko) * 1994-12-26 1996-07-22 이형도 센서용 히터전극 및 이를 사용한 세라믹 히터
US6075278A (en) * 1997-04-24 2000-06-13 Micron Technology, Inc. Aluminum based alloy bridge structure and method of forming same
KR100231838B1 (ko) * 1997-05-20 1999-12-01 유무성 집적회로용 리드프레임 및 그 제조방법
US6339026B1 (en) 1998-04-24 2002-01-15 Micron Technology, Inc. Semiconductor processing methods of polishing aluminum-comprising layers
US6522010B2 (en) 1998-06-30 2003-02-18 Micron Technology, Inc. Semiconductor constructions comprising aluminum-containing layers
JP2000150652A (ja) * 1998-09-03 2000-05-30 Seiko Epson Corp 半導体装置およびその製造方法
JP3533968B2 (ja) 1998-12-22 2004-06-07 セイコーエプソン株式会社 半導体装置の製造方法
JP2003089864A (ja) * 2001-09-18 2003-03-28 Mitsui Mining & Smelting Co Ltd アルミニウム合金薄膜及びその薄膜を有する配線回路並びにその薄膜を形成するターゲット材
US6955980B2 (en) * 2002-08-30 2005-10-18 Texas Instruments Incorporated Reducing the migration of grain boundaries
JP2005086118A (ja) * 2003-09-11 2005-03-31 Renesas Technology Corp 半導体装置
US7656045B2 (en) * 2006-02-23 2010-02-02 Freescale Semiconductor, Inc. Cap layer for an aluminum copper bond pad
JP5524905B2 (ja) * 2011-05-17 2014-06-18 株式会社神戸製鋼所 パワー半導体素子用Ａｌ合金膜

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL87258C (de) * 1969-01-15
US4065781A (en) * 1974-06-21 1977-12-27 Westinghouse Electric Corporation Insulated-gate thin film transistor with low leakage current
US4127424A (en) * 1976-12-06 1978-11-28 Ses, Incorporated Photovoltaic cell array
JPS6026640A (ja) * 1983-07-25 1985-02-09 Hitachi Ltd 耐食性アルミニウム電子材料
JPS61144847A (ja) * 1984-12-19 1986-07-02 Hitachi Ltd 半導体装置およびその製造法
US4843453A (en) * 1985-05-10 1989-06-27 Texas Instruments Incorporated Metal contacts and interconnections for VLSI devices
JPS6379950A (ja) * 1986-09-22 1988-04-09 Hitachi Ltd 耐食性保護膜を有する物品及びその製造方法
US4800419A (en) * 1987-01-28 1989-01-24 Lsi Logic Corporation Support assembly for integrated circuits
US4827326A (en) * 1987-11-02 1989-05-02 Motorola, Inc. Integrated circuit having polyimide/metal passivation layer and method of manufacture using metal lift-off

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EP0326018A3 (de) 1991-04-17
EP0326018A2 (de) 1989-08-02
KR890012377A (ko) 1989-08-26
US5019891A (en) 1991-05-28
KR0132786B1 (ko) 1998-04-16
DE68928448T2 (de) 1998-03-12

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