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DE60230126D1 - Molekularspeicher mit DNA Strängen als molekulare Schalter und Kohlenstoffnanoröhren sowie dazugehöriges Herstellungsverfahren - Google Patents

Molekularspeicher mit DNA Strängen als molekulare Schalter und Kohlenstoffnanoröhren sowie dazugehöriges Herstellungsverfahren

Info

Publication number
DE60230126D1
DE60230126D1 DE60230126T DE60230126T DE60230126D1 DE 60230126 D1 DE60230126 D1 DE 60230126D1 DE 60230126 T DE60230126 T DE 60230126T DE 60230126 T DE60230126 T DE 60230126T DE 60230126 D1 DE60230126 D1 DE 60230126D1
Authority
DE
Germany
Prior art keywords
molecular
manufacturing process
carbon nanotubes
dna strands
associated manufacturing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE60230126T
Other languages
English (en)
Inventor
Luigi Occhipinti
Francesco Buonocore
Vincenzo Vinciguerra
Gianguido Rizzotto
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
STMicroelectronics SRL
Original Assignee
STMicroelectronics SRL
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by STMicroelectronics SRL filed Critical STMicroelectronics SRL
Application granted granted Critical
Publication of DE60230126D1 publication Critical patent/DE60230126D1/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/02—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using elements whose operation depends upon chemical change
    • G11C13/025—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using elements whose operation depends upon chemical change using fullerenes, e.g. C60, or nanotubes, e.g. carbon or silicon nanotubes
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • G—PHYSICS
    • G06—COMPUTING; CALCULATING OR COUNTING
    • G06N—COMPUTING ARRANGEMENTS BASED ON SPECIFIC COMPUTATIONAL MODELS
    • G06N3/00—Computing arrangements based on biological models
    • G—PHYSICS
    • G06—COMPUTING; CALCULATING OR COUNTING
    • G06N—COMPUTING ARRANGEMENTS BASED ON SPECIFIC COMPUTATIONAL MODELS
    • G06N3/00—Computing arrangements based on biological models
    • G06N3/12—Computing arrangements based on biological models using genetic models
    • G06N3/123—DNA computing
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
    • G11C13/0009—RRAM elements whose operation depends upon chemical change
    • G11C13/0014—RRAM elements whose operation depends upon chemical change comprising cells based on organic memory material
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
    • G11C13/0009—RRAM elements whose operation depends upon chemical change
    • G11C13/0014—RRAM elements whose operation depends upon chemical change comprising cells based on organic memory material
    • G11C13/0019—RRAM elements whose operation depends upon chemical change comprising cells based on organic memory material comprising bio-molecules
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
    • H10K10/701—Organic molecular electronic devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K19/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic element specially adapted for rectifying, amplifying, oscillating or switching, covered by group H10K10/00
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K19/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic element specially adapted for rectifying, amplifying, oscillating or switching, covered by group H10K10/00
    • H10K19/80—Interconnections, e.g. terminals
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/20—Carbon compounds, e.g. carbon nanotubes or fullerenes
    • H10K85/221—Carbon nanotubes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/761—Biomolecules or bio-macromolecules, e.g. proteins, chlorophyl, lipids or enzymes
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C2213/00—Indexing scheme relating to G11C13/00 for features not covered by this group
    • G11C2213/70—Resistive array aspects
    • G11C2213/77—Array wherein the memory element being directly connected to the bit lines and word lines without any access device being used
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C2213/00—Indexing scheme relating to G11C13/00 for features not covered by this group
    • G11C2213/70—Resistive array aspects
    • G11C2213/81—Array wherein the array conductors, e.g. word lines, bit lines, are made of nanowires
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S977/00—Nanotechnology
    • Y10S977/84—Manufacture, treatment, or detection of nanostructure
    • Y10S977/849—Manufacture, treatment, or detection of nanostructure with scanning probe
    • Y10S977/855—Manufacture, treatment, or detection of nanostructure with scanning probe for manufacture of nanostructure
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S977/00—Nanotechnology
    • Y10S977/84—Manufacture, treatment, or detection of nanostructure
    • Y10S977/882—Assembling of separate components, e.g. by attaching
    • Y10S977/884—Assembled via biorecognition entity
    • Y10S977/885—Via nucleic acid hybridization

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Nanotechnology (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Biophysics (AREA)
  • Materials Engineering (AREA)
  • Theoretical Computer Science (AREA)
  • Health & Medical Sciences (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Mathematical Physics (AREA)
  • General Health & Medical Sciences (AREA)
  • Molecular Biology (AREA)
  • Bioinformatics & Cheminformatics (AREA)
  • Bioinformatics & Computational Biology (AREA)
  • Evolutionary Biology (AREA)
  • Evolutionary Computation (AREA)
  • Data Mining & Analysis (AREA)
  • Computing Systems (AREA)
  • General Engineering & Computer Science (AREA)
  • General Physics & Mathematics (AREA)
  • Biomedical Technology (AREA)
  • Software Systems (AREA)
  • Artificial Intelligence (AREA)
  • Computational Linguistics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Genetics & Genomics (AREA)
  • Biochemistry (AREA)
  • Carbon And Carbon Compounds (AREA)
  • Semiconductor Memories (AREA)
DE60230126T 2002-06-20 2002-06-20 Molekularspeicher mit DNA Strängen als molekulare Schalter und Kohlenstoffnanoröhren sowie dazugehöriges Herstellungsverfahren Expired - Lifetime DE60230126D1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
EP02425408A EP1376606B1 (de) 2002-06-20 2002-06-20 Molekularspeicher mit DNA Strängen als molekulare Schalter und Kohlenstoffnanoröhren sowie dazugehöriges Herstellungsverfahren

Publications (1)

Publication Number Publication Date
DE60230126D1 true DE60230126D1 (de) 2009-01-15

Family

ID=29717021

Family Applications (1)

Application Number Title Priority Date Filing Date
DE60230126T Expired - Lifetime DE60230126D1 (de) 2002-06-20 2002-06-20 Molekularspeicher mit DNA Strängen als molekulare Schalter und Kohlenstoffnanoröhren sowie dazugehöriges Herstellungsverfahren

Country Status (3)

Country Link
US (1) US7272511B2 (de)
EP (1) EP1376606B1 (de)
DE (1) DE60230126D1 (de)

Families Citing this family (23)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE60212118T2 (de) * 2002-08-08 2007-01-04 Sony Deutschland Gmbh Verfahren zur Herstellung einer Kreuzschienenstruktur von Nanodrähten
US6943417B2 (en) 2003-05-01 2005-09-13 Clemson University DNA-based memory device and method of reading and writing same
US7741033B2 (en) * 2003-05-13 2010-06-22 Trustees Of Boston College Electrocatalytic nucleic acid hybridization detection
US7670831B2 (en) * 2003-06-13 2010-03-02 Korea Advanced Institute Of Science And Technology Conductive carbon nanotubes dotted with metal and method for fabricating a biosensor using the same
JP4927319B2 (ja) * 2003-07-24 2012-05-09 韓国科学技術園 高密度カーボンナノチューブフィルムまたはパターンを用いたバイオチップの製造方法
KR100557338B1 (ko) * 2003-11-27 2006-03-06 한국과학기술원 자기조립 물질로 랩핑된 탄소나노튜브의 제조방법
EP1580739A1 (de) * 2004-03-23 2005-09-28 DSM IP Assets B.V. Eine Funktionsschicht enthaltender Gegenstand
KR100533316B1 (ko) * 2004-03-27 2005-12-02 한국과학기술원 포토리쏘그래피법과 드라이 에칭법을 이용한 탄소나노튜브다층막 패턴의 제조방법
US7345296B2 (en) * 2004-09-16 2008-03-18 Atomate Corporation Nanotube transistor and rectifying devices
US20090270266A1 (en) * 2005-04-12 2009-10-29 Kelley Shana O Method for Electrocatalytic Protein Detection
FR2893934B1 (fr) * 2005-11-25 2008-11-14 Commissariat Energie Atomique Dispositif nanostructure
US7701371B2 (en) * 2006-04-04 2010-04-20 Qualcomm Incorporated Digital gain computation for automatic gain control
JP2009084090A (ja) * 2007-09-28 2009-04-23 Fujifilm Corp 表面修飾カーボン材料およびその製造方法
JP5712129B2 (ja) 2008-09-02 2015-05-07 ザ ガバニング カウンシル オブ ザ ユニバーシティ オブ トロント ナノ構造化微小電極およびそれを組み込んだバイオセンシング装置
US8153437B2 (en) * 2010-03-10 2012-04-10 National Center For Biological Sciences DNA-based molecular switches and uses thereof
CN102565415B (zh) * 2010-12-10 2014-11-05 国家纳米科学中心 蛋白质原位表达芯片及其构建方法和应用
JP5989668B2 (ja) 2011-01-11 2016-09-07 ザ ガバニング カウンシル オブ ザ ユニバーシティ オブ トロント タンパク質検出方法
ES2799422T3 (es) 2011-03-10 2020-12-17 General Atomics Dispositivos y métodos de diagnóstico y preparación de muestras
CN103543270B (zh) * 2012-07-09 2015-07-08 国家纳米科学中心 一种蛋白质原位表达芯片及其制备方法和应用
US10853244B2 (en) 2016-12-07 2020-12-01 Sandisk Technologies Llc Randomly writable memory device and method of operating thereof
US11943940B2 (en) * 2018-07-11 2024-03-26 The Regents Of The University Of California Nucleic acid-based electrically readable, read-only memory
CN114031033B (zh) * 2021-11-29 2023-04-07 电子科技大学 基于声子辅助的量子比特三维集成装置
CN114925831B (zh) * 2022-05-25 2024-07-16 安徽理工大学 一种dna链置换化学反应网络模型

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2000047600A1 (en) * 1999-02-10 2000-08-17 University Of Maryland Photo-induced nucleic acid hybridization
US6314019B1 (en) * 1999-03-29 2001-11-06 Hewlett-Packard Company Molecular-wire crossbar interconnect (MWCI) for signal routing and communications
TWI292583B (en) * 2000-08-22 2008-01-11 Harvard College Doped elongated semiconductor articles, growing such articles, devices including such articles and fabicating such devices
US6958216B2 (en) * 2001-01-10 2005-10-25 The Trustees Of Boston College DNA-bridged carbon nanotube arrays
JP3731486B2 (ja) * 2001-03-16 2006-01-05 富士ゼロックス株式会社 トランジスタ
US7122461B2 (en) * 2005-02-10 2006-10-17 Intel Corporation Method to assemble structures from nano-materials

Also Published As

Publication number Publication date
EP1376606B1 (de) 2008-12-03
US7272511B2 (en) 2007-09-18
US20040114445A1 (en) 2004-06-17
EP1376606A1 (de) 2004-01-02

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