DE602006013106D1 - Magnetowiderstandsvorrichtung - Google Patents
MagnetowiderstandsvorrichtungInfo
- Publication number
- DE602006013106D1 DE602006013106D1 DE602006013106T DE602006013106T DE602006013106D1 DE 602006013106 D1 DE602006013106 D1 DE 602006013106D1 DE 602006013106 T DE602006013106 T DE 602006013106T DE 602006013106 T DE602006013106 T DE 602006013106T DE 602006013106 D1 DE602006013106 D1 DE 602006013106D1
- Authority
- DE
- Germany
- Prior art keywords
- magnetoresistance device
- magnetoresistance
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
- G11C11/14—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using thin-film elements
- G11C11/15—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using thin-film elements using multiple magnetic layers
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R33/00—Arrangements or instruments for measuring magnetic variables
- G01R33/02—Measuring direction or magnitude of magnetic fields or magnetic flux
- G01R33/06—Measuring direction or magnitude of magnetic fields or magnetic flux using galvano-magnetic devices
- G01R33/09—Magnetoresistive devices
- G01R33/093—Magnetoresistive devices using multilayer structures, e.g. giant magnetoresistance sensors
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y25/00—Nanomagnetism, e.g. magnetoimpedance, anisotropic magnetoresistance, giant magnetoresistance or tunneling magnetoresistance
-
- C—CHEMISTRY; METALLURGY
- C07—ORGANIC CHEMISTRY
- C07D—HETEROCYCLIC COMPOUNDS
- C07D491/00—Heterocyclic compounds containing in the condensed ring system both one or more rings having oxygen atoms as the only ring hetero atoms and one or more rings having nitrogen atoms as the only ring hetero atoms, not provided for by groups C07D451/00 - C07D459/00, C07D463/00, C07D477/00 or C07D489/00
- C07D491/02—Heterocyclic compounds containing in the condensed ring system both one or more rings having oxygen atoms as the only ring hetero atoms and one or more rings having nitrogen atoms as the only ring hetero atoms, not provided for by groups C07D451/00 - C07D459/00, C07D463/00, C07D477/00 or C07D489/00 in which the condensed system contains two hetero rings
- C07D491/04—Ortho-condensed systems
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R33/00—Arrangements or instruments for measuring magnetic variables
- G01R33/02—Measuring direction or magnitude of magnetic fields or magnetic flux
- G01R33/06—Measuring direction or magnitude of magnetic fields or magnetic flux using galvano-magnetic devices
- G01R33/09—Magnetoresistive devices
- G01R33/095—Magnetoresistive devices extraordinary magnetoresistance sensors
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
- G11B5/127—Structure or manufacture of heads, e.g. inductive
- G11B5/33—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only
- G11B5/39—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects
- G11B5/3903—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects using magnetic thin film layers or their effects, the films being part of integrated structures
- G11B5/3993—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects using magnetic thin film layers or their effects, the films being part of integrated structures in semi-conductors
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
- G11C11/14—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using thin-film elements
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N50/00—Galvanomagnetic devices
- H10N50/10—Magnetoresistive devices
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Organic Chemistry (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Nanotechnology (AREA)
- Computer Hardware Design (AREA)
- Crystallography & Structural Chemistry (AREA)
- Manufacturing & Machinery (AREA)
- Hall/Mr Elements (AREA)
- Magnetic Heads (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
EP06115403A EP1868254B1 (de) | 2006-06-13 | 2006-06-13 | Magnetowiderstandsvorrichtung |
Publications (1)
Publication Number | Publication Date |
---|---|
DE602006013106D1 true DE602006013106D1 (de) | 2010-05-06 |
Family
ID=37704280
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE602006013106T Active DE602006013106D1 (de) | 2006-06-13 | 2006-06-13 | Magnetowiderstandsvorrichtung |
Country Status (6)
Country | Link |
---|---|
US (1) | US20070285848A1 (de) |
EP (1) | EP1868254B1 (de) |
JP (1) | JP2007335839A (de) |
KR (1) | KR20070118937A (de) |
CN (1) | CN100593812C (de) |
DE (1) | DE602006013106D1 (de) |
Families Citing this family (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7881020B2 (en) * | 2007-05-11 | 2011-02-01 | Hitachi Global Storage Technologies Netherlands B.V. | Extraordinary magnetoresistive (EMR) device with novel lead structure |
US8035927B2 (en) * | 2008-01-28 | 2011-10-11 | Hitachi Global Storage Technologies Netherlands B.V. | EMR magnetic sensor having its active quantum well layer extending beyond an over-lying semiconductor layer end with tab and lead structure for improved electrical contact |
ATE523904T1 (de) * | 2008-06-09 | 2011-09-15 | Hitachi Ltd | Magnetowiderstandsvorrichtung |
ATE527701T1 (de) * | 2008-06-09 | 2011-10-15 | Hitachi Ltd | Magnetwiderstandsvorrichtung |
EP2190022B1 (de) * | 2008-11-20 | 2013-01-02 | Hitachi Ltd. | Spinpolarisierte Ladungsträgervorrichtung |
EP2317581B1 (de) | 2009-10-30 | 2012-03-07 | Hitachi, Ltd. | Magnetowiderstandsvorrichtung |
CN104603628B (zh) * | 2012-08-31 | 2016-12-14 | 株式会社日立制作所 | 磁阻传感器、梯度仪 |
EP2703831B1 (de) | 2012-08-31 | 2015-08-05 | Hitachi Ltd. | Magnetfeldsensor |
CN104931900B (zh) * | 2015-06-15 | 2017-12-29 | 中国科学院空间科学与应用研究中心 | 一种基于异常磁阻效应的高灵敏度矢量磁场传感器 |
Family Cites Families (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2798122B2 (ja) * | 1995-03-02 | 1998-09-17 | 日本電気株式会社 | コルビーノ構造を用いた非磁性磁気抵抗効果型再生ヘッド |
US5909617A (en) * | 1995-11-07 | 1999-06-01 | Micron Technology, Inc. | Method of manufacturing self-aligned resistor and local interconnect |
US5725739A (en) * | 1996-07-08 | 1998-03-10 | Micron Technology, Inc. | Low angle, low energy physical vapor deposition of alloys |
JP3592981B2 (ja) * | 1999-01-14 | 2004-11-24 | 松下電器産業株式会社 | 半導体装置及びその製造方法 |
US6707122B1 (en) * | 1999-11-30 | 2004-03-16 | Nec Laboratories America, Inc. | Extraordinary magnetoresistance at room temperature in inhomogeneous narrow-gap semiconductors |
US6714374B1 (en) * | 2000-08-31 | 2004-03-30 | Nec Corporation | Magnetoresistive sensor, magnetoresistive head, and magnetic recording/reproducing apparatus |
US7082838B2 (en) * | 2000-08-31 | 2006-08-01 | Tdk Corporation | Extraordinary piezoconductance in inhomogeneous semiconductors |
US6815077B1 (en) * | 2003-05-20 | 2004-11-09 | Matrix Semiconductor, Inc. | Low temperature, low-resistivity heavily doped p-type polysilicon deposition |
US7167346B2 (en) * | 2004-06-30 | 2007-01-23 | Hitachi Global Storage Technologies Netherlands B.V. | Extraordinary magnetoresistance sensor with perpendicular magnetic biasing by an antiferromagnetic/ferromagnetic exchange-coupled structure |
JP2006019728A (ja) * | 2004-06-30 | 2006-01-19 | Hitachi Global Storage Technologies Netherlands Bv | 交換結合された反強磁性/強磁性構造による垂直磁気バイアスを有する異常磁気抵抗センサ |
US7295406B2 (en) * | 2004-07-22 | 2007-11-13 | Hitachi Global Storage Technologies Netherlands B.V. | Narrow track extraordinary magneto resistive [EMR] device |
US7203036B2 (en) * | 2004-07-30 | 2007-04-10 | Hitachi Global Storage Technologies Netherlands B.V. | Planar extraordinary magnetoresistance sensor |
US7633718B2 (en) * | 2005-06-27 | 2009-12-15 | Hitachi Global Storage Technologies Netherlands, B.V. | Lead contact structure for EMR elements |
-
2006
- 2006-06-13 DE DE602006013106T patent/DE602006013106D1/de active Active
- 2006-06-13 EP EP06115403A patent/EP1868254B1/de not_active Not-in-force
- 2006-11-29 KR KR1020060119234A patent/KR20070118937A/ko not_active Application Discontinuation
- 2006-11-29 CN CN200610162906A patent/CN100593812C/zh not_active Expired - Fee Related
- 2006-11-30 US US11/606,183 patent/US20070285848A1/en not_active Abandoned
-
2007
- 2007-03-16 JP JP2007067868A patent/JP2007335839A/ja active Pending
Also Published As
Publication number | Publication date |
---|---|
KR20070118937A (ko) | 2007-12-18 |
CN100593812C (zh) | 2010-03-10 |
CN101089953A (zh) | 2007-12-19 |
JP2007335839A (ja) | 2007-12-27 |
EP1868254B1 (de) | 2010-03-24 |
EP1868254A1 (de) | 2007-12-19 |
US20070285848A1 (en) | 2007-12-13 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition |