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DE60136036D1 - Zur anwendung in der herstellung von nanostrukturen - Google Patents

Zur anwendung in der herstellung von nanostrukturen

Info

Publication number
DE60136036D1
DE60136036D1 DE60136036T DE60136036T DE60136036D1 DE 60136036 D1 DE60136036 D1 DE 60136036D1 DE 60136036 T DE60136036 T DE 60136036T DE 60136036 T DE60136036 T DE 60136036T DE 60136036 D1 DE60136036 D1 DE 60136036D1
Authority
DE
Germany
Prior art keywords
nanostructures
production
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE60136036T
Other languages
English (en)
Inventor
Robert L Gerlach
Paul P Tesch
Lynwod W Swanson
Mark W Utlaut
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
FEI Co
Original Assignee
FEI Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by FEI Co filed Critical FEI Co
Application granted granted Critical
Publication of DE60136036D1 publication Critical patent/DE60136036D1/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H01J37/04—Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement or ion-optical arrangement
    • H01J37/08—Ion sources; Ion guns
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/305—Electron-beam or ion-beam tubes for localised treatment of objects for casting, melting, evaporating, or etching
    • H01J37/3053—Electron-beam or ion-beam tubes for localised treatment of objects for casting, melting, evaporating, or etching for evaporating or etching
    • H01J37/3056—Electron-beam or ion-beam tubes for localised treatment of objects for casting, melting, evaporating, or etching for evaporating or etching for microworking, e. g. etching of gratings or trimming of electrical components
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/06—Sources
    • H01J2237/08—Ion sources
    • H01J2237/0822—Multiple sources

Landscapes

  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Electron Sources, Ion Sources (AREA)
  • Physical Vapour Deposition (AREA)
  • Electron Beam Exposure (AREA)
DE60136036T 2000-02-09 2001-02-07 Zur anwendung in der herstellung von nanostrukturen Expired - Lifetime DE60136036D1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US18124800P 2000-02-09 2000-02-09
PCT/EP2001/001278 WO2001059805A1 (en) 2000-02-09 2001-02-07 Multi-column fib for nanofabrication applications

Publications (1)

Publication Number Publication Date
DE60136036D1 true DE60136036D1 (de) 2008-11-20

Family

ID=22663481

Family Applications (1)

Application Number Title Priority Date Filing Date
DE60136036T Expired - Lifetime DE60136036D1 (de) 2000-02-09 2001-02-07 Zur anwendung in der herstellung von nanostrukturen

Country Status (5)

Country Link
US (1) US6797969B2 (de)
EP (1) EP1171901B1 (de)
JP (1) JP5322363B2 (de)
DE (1) DE60136036D1 (de)
WO (1) WO2001059805A1 (de)

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DE60136036D1 (de) * 2000-02-09 2008-11-20 Fei Co Zur anwendung in der herstellung von nanostrukturen
US6943351B2 (en) * 2000-02-19 2005-09-13 Multibeam Systems, Inc. Multi-column charged particle optics assembly
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US6734428B2 (en) 2000-02-19 2004-05-11 Multibeam Systems, Inc. Multi-beam multi-column electron beam inspection system
EP1332509A4 (de) * 2000-10-18 2007-06-06 Fei Co System mit einem fokussierten ionenstrahl
US7122795B2 (en) * 2001-04-18 2006-10-17 Multibeam Systems, Inc. Detector optics for charged particle beam inspection system
US7095013B2 (en) * 2002-05-30 2006-08-22 Micromass Uk Limited Mass spectrometer
US6800846B2 (en) 2002-05-30 2004-10-05 Micromass Uk Limited Mass spectrometer
US6794641B2 (en) 2002-05-30 2004-09-21 Micromass Uk Limited Mass spectrometer
AU2003242174A1 (en) * 2002-06-13 2003-12-31 Motosuke Miyoshi Electronic optical lens barrel and production method therefor
US6884995B2 (en) * 2002-07-03 2005-04-26 Micromass Uk Limited Mass spectrometer
EP1388883B1 (de) 2002-08-07 2013-06-05 Fei Company Koaxiale FIB-SEM-Säule
KR101051370B1 (ko) * 2003-09-05 2011-07-22 어플라이드 머티리얼즈 이스라엘 리미티드 입자광 시스템 및 장치와 이와 같은 시스템 및 장치용입자광 부품
GB2408143B (en) * 2003-10-20 2006-11-15 Ims Nanofabrication Gmbh Charged-particle multi-beam exposure apparatus
US7453075B2 (en) * 2004-05-17 2008-11-18 Mapper Lithography Ip B.V. Charged particle beam exposure system
TWI274787B (en) * 2005-01-04 2007-03-01 Prec Instr Dev Ct Nat Method and apparatus for fabricating nanostructure multi-element compound
WO2007021163A1 (en) * 2005-08-18 2007-02-22 Cebt Co. Ltd. Detector for electron column and method for detecting electrons for electron column
EP2510534A2 (de) * 2009-12-11 2012-10-17 Robert Bosch GmbH Vorrichtung und verfahren zur ionenstrahlmodifikation eines halbleitersubstrates
JP5988570B2 (ja) * 2010-12-31 2016-09-07 エフ・イ−・アイ・カンパニー 選択可能な複数の粒子放出器を備える荷電粒子源
NL2007392C2 (en) * 2011-09-12 2013-03-13 Mapper Lithography Ip Bv Assembly for providing an aligned stack of two or more modules and a lithography system or a microscopy system comprising such an assembly.
JP5977550B2 (ja) * 2012-03-22 2016-08-24 株式会社ニューフレアテクノロジー マルチ荷電粒子ビーム描画装置
US9478390B2 (en) * 2014-06-30 2016-10-25 Fei Company Integrated light optics and gas delivery in a charged particle lens
US10395887B1 (en) * 2018-02-20 2019-08-27 Technische Universiteit Delft Apparatus and method for inspecting a surface of a sample, using a multi-beam charged particle column
US10504687B2 (en) * 2018-02-20 2019-12-10 Technische Universiteit Delft Signal separator for a multi-beam charged particle inspection apparatus
DE102018117492B3 (de) 2018-07-19 2019-10-02 Carl Zeiss Microscopy Gmbh Verfahren zum Betreiben einer Mehrzahl von FIB-SEM-Systemen

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JPS59119666A (ja) * 1982-12-27 1984-07-10 Fujitsu Ltd イオンビ−ム照射装置
JPS60262419A (ja) * 1984-06-08 1985-12-25 Matsushita Electric Ind Co Ltd パタ−ン形成装置およびそれを用いた半導体装置の製造方法
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JPH07159063A (ja) 1993-12-06 1995-06-20 Tokyo Gas Co Ltd 二重管式オープンラック型気化装置
JPH097538A (ja) * 1995-06-26 1997-01-10 Nippon Telegr & Teleph Corp <Ntt> 荷電ビーム描画装置
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JP3647136B2 (ja) * 1996-04-23 2005-05-11 キヤノン株式会社 電子ビーム露光装置
US5834770A (en) 1997-03-21 1998-11-10 Leybold Inficon, Inc. Ion collecting electrode for total pressure collector
WO1998048443A1 (en) 1997-04-18 1998-10-29 Etec Systems, Inc. Multi-beam array electron optics
US5973447A (en) * 1997-07-25 1999-10-26 Monsanto Company Gridless ion source for the vacuum processing of materials
EP0968517B1 (de) 1997-12-23 2003-09-03 Fei Company Rasterelektronenmikroskop mit elektrostatischem objektiv und elektrische abtastvorrichtung
US5981962A (en) 1998-01-09 1999-11-09 International Business Machines Corporation Distributed direct write lithography system using multiple variable shaped electron beams
US6335532B1 (en) * 1998-02-27 2002-01-01 Hitachi, Ltd. Convergent charged particle beam apparatus and inspection method using same
US6023060A (en) 1998-03-03 2000-02-08 Etec Systems, Inc. T-shaped electron-beam microcolumn as a general purpose scanning electron microscope
US6145438A (en) 1998-03-20 2000-11-14 Berglund; C. Neil Method and apparatus for direct writing of semiconductor die using microcolumn array
US6476390B1 (en) * 1998-03-27 2002-11-05 Hitachi, Ltd. Method and apparatus for inspecting integrated circuit pattern using a plurality of charged particle beams
US5945677A (en) * 1998-04-10 1999-08-31 The Regents Of The University Of California Focused ion beam system
JPH11329322A (ja) 1998-05-11 1999-11-30 Advantest Corp 電子ビーム露光方法及び電子ビーム露光装置
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DE60136036D1 (de) * 2000-02-09 2008-11-20 Fei Co Zur anwendung in der herstellung von nanostrukturen
US20010032938A1 (en) * 2000-02-09 2001-10-25 Gerlach Robert L. Through-the-lens-collection of secondary particles for a focused ion beam system
US6683320B2 (en) * 2000-05-18 2004-01-27 Fei Company Through-the-lens neutralization for charged particle beam system
EP1332509A4 (de) * 2000-10-18 2007-06-06 Fei Co System mit einem fokussierten ionenstrahl
JP4200665B2 (ja) * 2001-05-08 2008-12-24 株式会社日立製作所 加工装置

Also Published As

Publication number Publication date
US6797969B2 (en) 2004-09-28
EP1171901B1 (de) 2008-10-08
WO2001059805A1 (en) 2001-08-16
JP5322363B2 (ja) 2013-10-23
EP1171901A1 (de) 2002-01-16
JP2003523052A (ja) 2003-07-29
US20010032939A1 (en) 2001-10-25

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