DE60133295D1 - Sulphoniumsalz-verbindung - Google Patents
Sulphoniumsalz-verbindungInfo
- Publication number
- DE60133295D1 DE60133295D1 DE60133295T DE60133295T DE60133295D1 DE 60133295 D1 DE60133295 D1 DE 60133295D1 DE 60133295 T DE60133295 T DE 60133295T DE 60133295 T DE60133295 T DE 60133295T DE 60133295 D1 DE60133295 D1 DE 60133295D1
- Authority
- DE
- Germany
- Prior art keywords
- sulphoniumsalz
- connection
- sulphoniumsalz connection
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C07—ORGANIC CHEMISTRY
- C07C—ACYCLIC OR CARBOCYCLIC COMPOUNDS
- C07C321/00—Thiols, sulfides, hydropolysulfides or polysulfides
- C07C321/24—Thiols, sulfides, hydropolysulfides, or polysulfides having thio groups bound to carbon atoms of six-membered aromatic rings
- C07C321/28—Sulfides, hydropolysulfides, or polysulfides having thio groups bound to carbon atoms of six-membered aromatic rings
- C07C321/30—Sulfides having the sulfur atom of at least one thio group bound to two carbon atoms of six-membered aromatic rings
-
- C—CHEMISTRY; METALLURGY
- C07—ORGANIC CHEMISTRY
- C07C—ACYCLIC OR CARBOCYCLIC COMPOUNDS
- C07C53/00—Saturated compounds having only one carboxyl group bound to an acyclic carbon atom or hydrogen
- C07C53/15—Saturated compounds having only one carboxyl group bound to an acyclic carbon atom or hydrogen containing halogen
- C07C53/19—Acids containing three or more carbon atoms
- C07C53/21—Acids containing three or more carbon atoms containing fluorine
-
- C—CHEMISTRY; METALLURGY
- C07—ORGANIC CHEMISTRY
- C07C—ACYCLIC OR CARBOCYCLIC COMPOUNDS
- C07C381/00—Compounds containing carbon and sulfur and having functional groups not covered by groups C07C301/00 - C07C337/00
- C07C381/12—Sulfonium compounds
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/0045—Photosensitive materials with organic non-macromolecular light-sensitive compounds not otherwise provided for, e.g. dissolution inhibitors
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/038—Macromolecular compounds which are rendered insoluble or differentially wettable
- G03F7/0382—Macromolecular compounds which are rendered insoluble or differentially wettable the macromolecular compound being present in a chemically amplified negative photoresist composition
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
- G03F7/0392—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
Landscapes
- Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- Physics & Mathematics (AREA)
- Spectroscopy & Molecular Physics (AREA)
- General Physics & Mathematics (AREA)
- Organic Low-Molecular-Weight Compounds And Preparation Thereof (AREA)
- Materials For Photolithography (AREA)
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2000260157 | 2000-08-30 | ||
| JP2000260157 | 2000-08-30 | ||
| PCT/JP2001/005512 WO2002018332A1 (fr) | 2000-08-30 | 2001-06-27 | Compose de sel de sulfonium |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| DE60133295D1 true DE60133295D1 (de) | 2008-04-30 |
| DE60133295T2 DE60133295T2 (de) | 2009-04-30 |
Family
ID=18748210
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE60133295T Expired - Lifetime DE60133295T2 (de) | 2000-08-30 | 2001-06-27 | Sulphoniumsalz-verbindung |
Country Status (8)
| Country | Link |
|---|---|
| US (1) | US6924323B2 (de) |
| EP (1) | EP1314725B1 (de) |
| JP (1) | JP4023318B2 (de) |
| KR (1) | KR100763625B1 (de) |
| CN (1) | CN1297537C (de) |
| AU (1) | AU2001267839A1 (de) |
| DE (1) | DE60133295T2 (de) |
| WO (1) | WO2002018332A1 (de) |
Families Citing this family (36)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP4373624B2 (ja) * | 2000-09-04 | 2009-11-25 | 富士フイルム株式会社 | 感熱性組成物、それを用いた平版印刷版原版及びスルホニウム塩化合物 |
| JP2003107707A (ja) * | 2001-09-28 | 2003-04-09 | Clariant (Japan) Kk | 化学増幅型ポジ型感放射線性樹脂組成物 |
| JP4121396B2 (ja) * | 2003-03-05 | 2008-07-23 | 富士フイルム株式会社 | ポジ型レジスト組成物 |
| US7122294B2 (en) | 2003-05-22 | 2006-10-17 | 3M Innovative Properties Company | Photoacid generators with perfluorinated multifunctional anions |
| AU2003286758A1 (en) | 2003-07-17 | 2005-03-07 | Honeywell International Inc | Planarization films for advanced microelectronic applications and devices and methods of production thereof |
| WO2005037778A1 (ja) * | 2003-10-21 | 2005-04-28 | Wako Pure Chemical Industries, Ltd. | トリアリールスルホニウム塩の製造法 |
| US20050148679A1 (en) * | 2003-12-29 | 2005-07-07 | Chingfan Chiu | Aryl sulfonium salt, polymerizable composition and polymerization method of the same |
| WO2005089355A2 (en) * | 2004-03-16 | 2005-09-29 | Cornell Research Foundation, Inc. | Environmentally friendly photoacid generators (pags) with no perfluorooctyl sulfonates (pfos) |
| DE102004058584A1 (de) * | 2004-12-03 | 2006-06-08 | Basf Ag | Strahlungshärtbare Beschichtungsmassen |
| US8263306B2 (en) * | 2005-04-21 | 2012-09-11 | Texas Instruments Incorporated | Use of blended solvents in defectivity prevention |
| US7521170B2 (en) * | 2005-07-12 | 2009-04-21 | Az Electronic Materials Usa Corp. | Photoactive compounds |
| EP1748057A1 (de) * | 2005-07-29 | 2007-01-31 | 3M Innovative Properties Company | Sulfonium-Initiatoren, Verfahren zu ihrer Herstellung und ihre Verwendung in kationisch polymerisierbaren Zusammensetzungen |
| US7678528B2 (en) * | 2005-11-16 | 2010-03-16 | Az Electronic Materials Usa Corp. | Photoactive compounds |
| WO2007124092A2 (en) | 2006-04-21 | 2007-11-01 | Cornell Research Foundation, Inc. | Photoacid generator compounds and compositions |
| JP5374836B2 (ja) * | 2006-06-09 | 2013-12-25 | 住友化学株式会社 | 化学増幅型レジスト組成物の酸発生剤用の塩 |
| US7491482B2 (en) * | 2006-12-04 | 2009-02-17 | Az Electronic Materials Usa Corp. | Photoactive compounds |
| US7390613B1 (en) * | 2006-12-04 | 2008-06-24 | Az Electronic Materials Usa Corp. | Photoactive compounds |
| US20080187868A1 (en) * | 2007-02-07 | 2008-08-07 | Munirathna Padmanaban | Photoactive Compounds |
| US8163461B2 (en) | 2008-04-09 | 2012-04-24 | Cornell Research Foundation, Inc. | Photoacid generator compounds and compositions |
| KR100998503B1 (ko) | 2008-10-30 | 2010-12-07 | 금호석유화학 주식회사 | 방향족 환을 포함하는 산 발생제 |
| JP5324361B2 (ja) * | 2009-08-28 | 2013-10-23 | 東京応化工業株式会社 | 表面処理剤及び表面処理方法 |
| US9081277B2 (en) * | 2010-12-24 | 2015-07-14 | Fujifilm Corporation | Actinic-ray- or radiation-sensitive resin composition, actinic-ray- or radiation-sensitive film therefrom and method of forming pattern using the composition |
| US8614047B2 (en) * | 2011-08-26 | 2013-12-24 | International Business Machines Corporation | Photodecomposable bases and photoresist compositions |
| JP6112813B2 (ja) * | 2012-09-27 | 2017-04-12 | 住友精化株式会社 | トリアリールスルホニウム塩の製造方法 |
| JP6244109B2 (ja) | 2013-05-31 | 2017-12-06 | 東京応化工業株式会社 | レジスト組成物、化合物、高分子化合物及びレジストパターン形成方法 |
| JP6240409B2 (ja) | 2013-05-31 | 2017-11-29 | サンアプロ株式会社 | スルホニウム塩および光酸発生剤 |
| JP6059675B2 (ja) * | 2014-03-24 | 2017-01-11 | 信越化学工業株式会社 | 化学増幅型ネガ型レジスト組成物及びレジストパターン形成方法 |
| TWI516520B (zh) | 2014-10-31 | 2016-01-11 | 財團法人工業技術研究院 | 波長轉換聚合物、其製法及包含其之波長轉換裝置 |
| JP6583126B2 (ja) * | 2016-04-28 | 2019-10-02 | 信越化学工業株式会社 | 新規カルボン酸オニウム塩、化学増幅レジスト組成物、及びパターン形成方法 |
| JP6583136B2 (ja) * | 2016-05-11 | 2019-10-02 | 信越化学工業株式会社 | 新規スルホニウム化合物及びその製造方法、レジスト組成物、並びにパターン形成方法 |
| JP7057240B2 (ja) * | 2018-07-02 | 2022-04-19 | サンアプロ株式会社 | スルホニウム塩の製造方法 |
| US11746085B2 (en) | 2018-10-09 | 2023-09-05 | Changzhou Tronly Advanced Electronic Materials Co., Ltd. | Triphenylsulfonium salt compound, and uses thereof |
| WO2020175495A1 (ja) * | 2019-02-26 | 2020-09-03 | 富士フイルム株式会社 | 塩の製造方法 |
| JP7149241B2 (ja) * | 2019-08-26 | 2022-10-06 | 信越化学工業株式会社 | レジスト材料及びパターン形成方法 |
| KR20220123377A (ko) * | 2019-12-27 | 2022-09-06 | 제이에스알 가부시끼가이샤 | 감방사선성 수지 조성물 및 패턴 형성 방법 |
| US11681220B2 (en) * | 2020-03-05 | 2023-06-20 | Sumitomo Chemical Company, Limited | Resist composition and method for producing resist pattern |
Family Cites Families (18)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| IE42085B1 (en) * | 1974-09-18 | 1980-06-04 | Ici Ltd | Photopolymerisable compositions |
| DE4006190A1 (de) * | 1990-02-28 | 1991-08-29 | Hoechst Ag | Negativ arbeitendes strahlungsempfindliches gemisch und daraus hergestelltes strahlungsempfindliches aufzeichnungsmaterial |
| EP0501919A1 (de) * | 1991-03-01 | 1992-09-02 | Ciba-Geigy Ag | Strahlungsempfindliche Zusammensetzungen auf der Basis von Polyphenolen und Acetalen |
| EP0601974B1 (de) * | 1992-12-04 | 1997-05-28 | OCG Microelectronic Materials Inc. | Positiv-Photoresist mit verbesserten Prozesseigenschaften |
| US5558971A (en) * | 1994-09-02 | 1996-09-24 | Wako Pure Chemical Industries, Ltd. | Resist material |
| JP2956824B2 (ja) * | 1995-06-15 | 1999-10-04 | 東京応化工業株式会社 | ポジ型レジスト膜形成用塗布液 |
| US5962180A (en) * | 1996-03-01 | 1999-10-05 | Jsr Corporation | Radiation sensitive composition |
| DE69915928T2 (de) * | 1998-05-19 | 2005-04-14 | Jsr Corp. | Diazodisulfonverbindung und strahlungsempfindliche Harzzusammensetzung |
| KR100279497B1 (ko) * | 1998-07-16 | 2001-02-01 | 박찬구 | 술포늄 염의 제조방법 |
| KR100293266B1 (ko) * | 1999-01-19 | 2001-06-15 | 박찬구 | 술포늄염의 제조방법 |
| TWI227377B (en) * | 1999-10-06 | 2005-02-01 | Fuji Photo Film Co Ltd | Positive-type resist composition |
| US6723483B1 (en) * | 1999-12-27 | 2004-04-20 | Wako Pure Chemical Industries, Ltd. | Sulfonium salt compounds |
| US6727036B2 (en) * | 1999-12-27 | 2004-04-27 | Fuji Photo Film Co., Ltd. | Positive-working radiation-sensitive composition |
| JP4070393B2 (ja) * | 2000-01-17 | 2008-04-02 | 富士フイルム株式会社 | ネガ型レジスト組成物 |
| TWI224713B (en) * | 2000-01-27 | 2004-12-01 | Fuji Photo Film Co Ltd | Positive photoresist composition |
| US6692883B2 (en) * | 2000-04-21 | 2004-02-17 | Fuji Photo Film Co., Ltd. | Positive photoresist composition |
| US6660446B2 (en) * | 2000-05-30 | 2003-12-09 | Fuji Photo Film Co., Ltd. | Heat-sensitive composition and planographic printing plate |
| EP1179750B1 (de) * | 2000-08-08 | 2012-07-25 | FUJIFILM Corporation | Positiv arbeitende lichtempfindliche Zusammensetzung und Verfahren zur Herstellung einer integrierten Präzisions-Schaltung mit derselben |
-
2001
- 2001-06-27 DE DE60133295T patent/DE60133295T2/de not_active Expired - Lifetime
- 2001-06-27 CN CNB018147429A patent/CN1297537C/zh not_active Expired - Lifetime
- 2001-06-27 AU AU2001267839A patent/AU2001267839A1/en not_active Abandoned
- 2001-06-27 EP EP01945637A patent/EP1314725B1/de not_active Expired - Lifetime
- 2001-06-27 US US10/312,572 patent/US6924323B2/en not_active Expired - Lifetime
- 2001-06-27 WO PCT/JP2001/005512 patent/WO2002018332A1/ja active IP Right Grant
- 2001-06-27 KR KR1020037002593A patent/KR100763625B1/ko active IP Right Grant
- 2001-06-27 JP JP2002523450A patent/JP4023318B2/ja not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| CN1449379A (zh) | 2003-10-15 |
| KR100763625B1 (ko) | 2007-10-05 |
| JP4023318B2 (ja) | 2007-12-19 |
| DE60133295T2 (de) | 2009-04-30 |
| EP1314725B1 (de) | 2008-03-19 |
| EP1314725A4 (de) | 2005-06-29 |
| WO2002018332A1 (fr) | 2002-03-07 |
| KR20030029837A (ko) | 2003-04-16 |
| AU2001267839A1 (en) | 2002-03-13 |
| CN1297537C (zh) | 2007-01-31 |
| US6924323B2 (en) | 2005-08-02 |
| EP1314725A1 (de) | 2003-05-28 |
| US20040033434A1 (en) | 2004-02-19 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| 8364 | No opposition during term of opposition |