DE4210400C1 - Local copper@ deposition from organo:metallic film on substrate - by forming film from mixt. of copper acetate and copper formate in specified ratio and depositing film by laser irradiation - Google Patents
Local copper@ deposition from organo:metallic film on substrate - by forming film from mixt. of copper acetate and copper formate in specified ratio and depositing film by laser irradiationInfo
- Publication number
- DE4210400C1 DE4210400C1 DE4210400A DE4210400A DE4210400C1 DE 4210400 C1 DE4210400 C1 DE 4210400C1 DE 4210400 A DE4210400 A DE 4210400A DE 4210400 A DE4210400 A DE 4210400A DE 4210400 C1 DE4210400 C1 DE 4210400C1
- Authority
- DE
- Germany
- Prior art keywords
- copper
- film
- deposition
- acetate
- formate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Classifications
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/10—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern
- H05K3/105—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern by conversion of non-conductive material on or in the support into conductive material, e.g. by using an energy beam
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
- C23C18/14—Decomposition by irradiation, e.g. photolysis, particle radiation or by mixed irradiation sources
- C23C18/143—Radiation by light, e.g. photolysis or pyrolysis
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K2203/00—Indexing scheme relating to apparatus or processes for manufacturing printed circuits covered by H05K3/00
- H05K2203/10—Using electric, magnetic and electromagnetic fields; Using laser light
- H05K2203/107—Using laser light
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K2203/00—Indexing scheme relating to apparatus or processes for manufacturing printed circuits covered by H05K3/00
- H05K2203/12—Using specific substances
- H05K2203/121—Metallo-organic compounds
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Toxicology (AREA)
- Health & Medical Sciences (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Manufacturing & Machinery (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Chemically Coating (AREA)
Abstract
Description
Die Erfindung betrifft ein Verfahren zur lokalen Abscheidung von Kupfer aus einem metallorganischen Film, wobei unter loka ler Erhitzung durch einen Laser das Kupfer auf der Oberfläche des mit dem Film belegten Substrates erzeugt wird.The invention relates to a method for local deposition of copper from an organometallic film, with loka Laser heating the copper on the surface of the substrate covered with the film is generated.
Für die Herstellung von Leiterbahnen, beispielsweise auf Lei terplatten, ist eine Vielzahl von Verfahren bekannt. Insbeson dere für die Reparatur von Leiterbahnen, z. B. auch auf bereits bestückten Leiterplatten wird sehr häufig ein Verfahren verwendet, bei dem Kupfer aus einem auf die Leiterplatte aufgebrachten metallorganischen Film abgeschieden wird. Der dabei erzeugte feste Film wird lokal mit einem Laser derart erhitzt, daß sich entsprechend einer vorbestimmten Struktur, die vom Laser abgefahren wird, Kupfer abscheidet. In einem nachgeschalteten Verfahrensschritt kann diese Kupferabscheidung nachträglich galvanisch oder stromlos verstärkt werden.For the production of conductor tracks, for example on Lei terplatten, a variety of methods are known. In particular for the repair of conductor tracks, e.g. B. also on PCBs that have already been populated are very common Process used in the copper from one to the Printed circuit board deposited organometallic film becomes. The solid film produced in this way is localized with a laser heated in such a way that according to a predetermined Structure that is scanned by the laser deposits copper. In a subsequent process step can Copper deposition afterwards galvanically or without current be reinforced.
Als metallorganische Stoffe zur Erzeugung des entsprechenden Filmes werden hauptsächlich Kupferformiat oder Kupferacetat eingesetzt. Beide Substanzen werden jeweils auf ein Substrat, beispielsweise einen Kunststoff, aufgebracht und getrocknet. Dabei ist es notwendig, daß die jeweilige, den Film bildende Substanz amorph vorliegt. Um dies in der Praxis zu erreichen, sind jedoch teilweise sehr aufwendige Vorgehensweisen notwen dig.As organometallic substances to produce the corresponding Films are mainly copper formate or copper acetate used. Both substances are each on a substrate, for example a plastic, applied and dried. It is necessary that the respective one that forms the film Substance is amorphous. To achieve this in practice, however, very complex procedures are sometimes necessary dig.
Kupferformiat kristallisiert in der Regel beim Trocknen aus. Kupferacetatschichten weisen nach dem Trocknen eine unten lie gende dünne, amorphe Schicht auf und eine darüberliegende kri stalline Schicht. In der Literatur beschriebene Methoden zur Erzeugung eines insgesamt amorphen Filmes verwenden entweder bestimmte Hilfssubstanzen und/oder eine sehr genaue Temperaturregelung für die Zeit der Abscheidung bzw. Trocknung. In diesem Zusammenhang ist zu erwähnen, daß der amorphe Zustand möglichst über längere Zeit beibehalten werden muß, damit ein zeitlicher Spielraum für die nach folgende Laserbearbeitung existiert. Die bisher bekannten Methoden zur amorphen Abscheidung der genannten Substanzen sind jedoch sehr aufwendig.Copper formate usually crystallizes out on drying. Copper acetate layers have a bottom after drying thin, amorphous layer and a layer above it stalline layer. Methods described in the literature for Use generation of an overall amorphous film either certain auxiliary substances and / or a very precise one Temperature control for the time of deposition or Drying. In this context it should be mentioned that the Maintain amorphous state for a long time if possible must be, so that a time margin for the after following laser processing exists. The previously known Methods for the amorphous deposition of the substances mentioned are however very expensive.
Aus der DE-A-38 26 046 ist ein Verfahren zur Herstellung von metallischen Schichten bekannt. Es wird eine Schicht aus Palladiumacetat durch die Einwirkung von Laser strahlung thermisch zersetzt, wobei sich eine metallische Schicht aus Palladium ausbildet. Es wird erwähnt, daß eine flächenhafte Ausbildung der Schicht möglich ist, sowie eine strukturierte Ausbildung mittels einer Maske oder mittels gelenkter Laserstrahlung.DE-A-38 26 046 describes a process for the production known from metallic layers. It's going to be a shift from palladium acetate by the action of laser radiation thermally decomposed, forming a metallic Forms layer of palladium. It is mentioned that a areal formation of the layer is possible, as well structured training using a mask or by means of directed laser radiation.
Die DE-A-38 40 201 beschreibt ein Kontaktierverfahren zur Beschichtung von Begrenzungsflächen unter Einsatz von metallorganischen Verbindungen. Die Kontaktierschicht kann beispielsweise durch ein Metall dargestellt werden.DE-A-38 40 201 describes a contacting method for Coating of boundary surfaces using organometallic compounds. The contact layer can for example represented by a metal.
Spezielle Hineise auf den Einsatz bzw. die Handhabung von Kupferacetat oder Kupferformiat sind den folgenden beiden Literaturstellen zu entnehmen: -′Fast laser writing of copper and iridium lines from thin solid surface layers of metalorganic compounds′; P. Hoffmann, B. Lecohier, S. Goldoni, H. van den Bergh; Applied Surface Science 43 (1989) 54-60; Elsevier Science Publishers B.V. (North- Holland) und -′Laser writing of copper lines from metal organic films′; A. Gupta, R. Jagannathan; Appl. Phys. Lett. 51 (26), 28.12.1987, S. 2254-2256; American Institute of Physics.Special information on the use or handling of copper acetate or copper formate can be found in the following two references: -'Fast laser writing of copper and iridium lines from thin solid surface layers of metalorganic compounds'; P. Hoffmann, B. Lecohier, S. Goldoni, H. van den Bergh; Applied Surface Science 43 (1989) 54-60; Elsevier Science Publishers BV (North Holland) and Laser laser of copper lines from metal organic films; A. Gupta, R. Jagannathan; Appl. Phys. Lett. 51 (26), Dec. 28, 1987, pp. 2254-2256; American Institute of Physics.
Beide Literaturstellen befassen sich mit der Metallisierung durch Laserstrahlung aus metallorganischen Filmen. Dabei wird im Artikel von Hoffmann et al auf der Seite 55 unter Punkt 3.1. vermerkt, daß Kupferformiat nach dem Aufsprühen auch auskristallisierte, jedoch nicht so schnell wie andere Substanzen. Der Artikel von Gupta et al vermerkt auf der Seite 2254, daß eine Lösung aus Kupferformiat beim Trocknen Kristallisationserscheinungen zeigt und daß der Film kristallin und rauh wirkt. Eine metallorganische Substanz bzw. ein Gemisch das beim Trocknen über längere Zeit im amorphen Zustand ist, ist aus der Literatur nicht bekannt.Both references deal with metallization by laser radiation from organometallic films. Here is described in the article by Hoffmann et al on page 55 under Point 3.1. noted that copper formate after spraying also crystallized out, but not as quickly as other substances. The article by Gupta et al noted on page 2254 that a solution of copper formate at Drying shows signs of crystallization and that the Film looks crystalline and rough. An organometallic Substance or mixture that dries over a longer period of time Time in the amorphous state is not from the literature known.
Der Erfindung liegt die Aufgabe zugrunde, ein Verfahren zur lokalen Kupferabscheidung aus metallorganischen Filmen bereitzustellen, wobei der metallorganische Film sich leicht aufbringen läßt, in amorphem Zustand vorliegt und diesen Zustand über längere Zeit hält.The invention has for its object a method for local copper deposition from organometallic films to provide, the organometallic film itself can be easily applied, is in an amorphous state and maintains this condition for a long time.
Die Lösung dieser Aufgabe geschieht durch den Einsatz eines metallorganischen Filmes, der aus einem Gemisch von Kupferacetat und Kupferformiat hergestellt wird und einen amorphen Film auf einem Substrat bildet.This task is solved through the application of an organometallic film made from a mixture of Copper acetate and copper formate is produced and a forms amorphous film on a substrate.
Der Erfindung liegt die Erkenntnis zugrunde, daß sich ein Gemisch aus Kupferacetat und Kupferformiat leichter auf ein Substrat aufbringen läßt, als die einzelnen Substanzen für sich. Das Gemisch dieser beiden Substanzen bildet einen amorphen Film. Ein Substrat mit einem derartigen Film läßt sich zumindest mehrere Tage lang lagern, ohne daß Kristallisationsvorgänge im Film auftreten.The invention is based on the knowledge that a Mixture of copper acetate and copper formate more easily a substrate can be applied as the individual substances for themselves. The mixture of these two substances forms an amorphous film. A substrate with such a Film can be stored for at least several days without that crystallization processes occur in the film.
Neben der Notwendigkeit eines amorphen metallorganischen Filmes für lokalen Kupferabscheidungen, die mittels Laser erzeugt werden, ergibt sich somit auch der Vorteil einer variableren Weiterverarbeitungszeit. In addition to the need for an amorphous organometallic Film for local copper deposits using laser generated, there is also the advantage of a variable processing time.
Die bisher gängige Meinung besagte, daß beim Trocknen einer Schicht aus einem Gemisch von Kupferformiat und Kupferacetat eine Entmischung stattfindet und als Folge davon zumindest eine Substanz ausfällt bzw. über längere Zeit separiert wird und in kristallinem Zustand vorliegt. Infolge dessen würde der Einsatz einer entsprechenden Mischung als nicht sinnvoll Die Erfindung verwendet entgegen der bisher gängigen Meinung ein Gemisch aus Kupferformiat und Kupferacetat und erzielt da mit eine nicht vorhersehbare Wirkung. Es tritt weder beim Trocknen bzw. bei der Herstellung des Filmes noch in einer ab sehbaren Zeit danach eine Entmischung bzw. eine Kristallisation auf.The current opinion was that when drying a layer of a mixture of copper formate and Copper acetate segregation takes place and as a result at least one substance fails or longer Time is separated and is in the crystalline state. As a result, the use of an appropriate Mixing does not make sense Contrary to the current opinion, the invention uses a mixture of copper formate and copper acetate and achieved there with an unpredictable effect. It neither occurs Drying or still in one during the production of the film visible time thereafter a segregation or a Crystallization on.
Eine vorteilhafte Ausgestaltung der Erfindung sieht ein Mi schungsverhältnis zwischen Kupferacetat und Kupferformiat von 1 : 5 vor. Bei Versuchen, in denen der metallorganische Film in einem Heizschrank durch entsprechendes Eintrocknen einer je weilig wäßrigen Lösung erzeugt wurde, hat sich dieses Mi schungsverhaltnis als besonders vorteilhaft erwiesen.An advantageous embodiment of the invention sees a Mi ratio between copper acetate and copper formate of 1: 5 before. In experiments in which the organometallic film in a heating cabinet by drying each one because aqueous solution was generated, this Mi proved to be particularly advantageous.
Claims (2)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE4210400A DE4210400C1 (en) | 1992-03-30 | 1992-03-30 | Local copper@ deposition from organo:metallic film on substrate - by forming film from mixt. of copper acetate and copper formate in specified ratio and depositing film by laser irradiation |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE4210400A DE4210400C1 (en) | 1992-03-30 | 1992-03-30 | Local copper@ deposition from organo:metallic film on substrate - by forming film from mixt. of copper acetate and copper formate in specified ratio and depositing film by laser irradiation |
Publications (1)
Publication Number | Publication Date |
---|---|
DE4210400C1 true DE4210400C1 (en) | 1993-01-07 |
Family
ID=6455430
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE4210400A Expired - Fee Related DE4210400C1 (en) | 1992-03-30 | 1992-03-30 | Local copper@ deposition from organo:metallic film on substrate - by forming film from mixt. of copper acetate and copper formate in specified ratio and depositing film by laser irradiation |
Country Status (1)
Country | Link |
---|---|
DE (1) | DE4210400C1 (en) |
Cited By (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO1996015289A1 (en) * | 1994-11-14 | 1996-05-23 | Simon Fraser University | Method for directly depositing metal containing patterned films |
DE19517625A1 (en) * | 1995-05-13 | 1996-11-14 | Budenheim Rud A Oetker Chemie | Laser printing esp. on glass or plastic substrate |
DE19723734A1 (en) * | 1997-06-06 | 1998-12-10 | Gerhard Prof Dr Naundorf | Conductor structures on a non-conductive carrier material, in particular fine conductor structures, and methods for their production |
EP0979029A2 (en) * | 1998-08-04 | 2000-02-09 | Wolfgang Anger | Process for manufacturing printed circuit boards |
NL1021245C2 (en) * | 2002-08-09 | 2004-02-10 | Tno | Carrier for at least one IC and systems comprising such a carrier and an IC and / or such carrier and a connecting plate. |
US6777036B2 (en) | 2001-06-06 | 2004-08-17 | Simon Fraser University | Method for the deposition of materials from mesomorphous films |
EP2826885A4 (en) * | 2012-03-16 | 2015-10-21 | Adeka Corp | Copper film-forming composition, and method for producing copper film by using the composition |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE3826046A1 (en) * | 1987-08-17 | 1989-03-02 | Asea Brown Boveri | METHOD FOR PRODUCING METAL LAYERS |
DE3840201A1 (en) * | 1988-11-29 | 1990-05-31 | Asea Brown Boveri | Contact-making method |
-
1992
- 1992-03-30 DE DE4210400A patent/DE4210400C1/en not_active Expired - Fee Related
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE3826046A1 (en) * | 1987-08-17 | 1989-03-02 | Asea Brown Boveri | METHOD FOR PRODUCING METAL LAYERS |
DE3840201A1 (en) * | 1988-11-29 | 1990-05-31 | Asea Brown Boveri | Contact-making method |
Cited By (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO1996015289A1 (en) * | 1994-11-14 | 1996-05-23 | Simon Fraser University | Method for directly depositing metal containing patterned films |
CN1092244C (en) * | 1994-11-14 | 2002-10-09 | 西蒙·弗雷泽大学 | Method for directly depositing metal containing patterned films |
DE19517625A1 (en) * | 1995-05-13 | 1996-11-14 | Budenheim Rud A Oetker Chemie | Laser printing esp. on glass or plastic substrate |
US6319564B1 (en) | 1997-06-06 | 2001-11-20 | Gerhard Naundorf | Conductor track structures arranged on a nonconductive support material, especially fine conductor track structures, and method for producing the same |
DE19723734A1 (en) * | 1997-06-06 | 1998-12-10 | Gerhard Prof Dr Naundorf | Conductor structures on a non-conductive carrier material, in particular fine conductor structures, and methods for their production |
DE19723734C2 (en) * | 1997-06-06 | 2002-02-07 | Gerhard Naundorf | Conductor structures on a non-conductive carrier material and method for their production |
EP0979029A2 (en) * | 1998-08-04 | 2000-02-09 | Wolfgang Anger | Process for manufacturing printed circuit boards |
EP0979029A3 (en) * | 1998-08-04 | 2001-08-29 | Wolfgang Anger | Process for manufacturing printed circuit boards |
DE19835158A1 (en) * | 1998-08-04 | 2000-02-10 | Wolfgang Anger | Process for the production of printed circuit boards |
US6777036B2 (en) | 2001-06-06 | 2004-08-17 | Simon Fraser University | Method for the deposition of materials from mesomorphous films |
NL1021245C2 (en) * | 2002-08-09 | 2004-02-10 | Tno | Carrier for at least one IC and systems comprising such a carrier and an IC and / or such carrier and a connecting plate. |
WO2004015775A1 (en) * | 2002-08-09 | 2004-02-19 | Nederlandse Organisatie Voor Toegepast- Natuurwetenschappelijk Onderzoek Tno | Stacking substrate for at least one ic and system comprising such a substrate |
EP2826885A4 (en) * | 2012-03-16 | 2015-10-21 | Adeka Corp | Copper film-forming composition, and method for producing copper film by using the composition |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
EP0466202A1 (en) | Method of manufacturing circuit boards | |
DE69808535T2 (en) | Method of manufacturing an organic electroluminescent device | |
DE1809115A1 (en) | Process for the production of line connections comprising several layers for semiconductor arrangements | |
EP0361195A2 (en) | Printed circuit board with moulded substrate | |
DE4020324A1 (en) | Vacuum deposition using pressurised reflow process - has thin film formed on substrate and heated to melt into recess and exposed to pressurised gas to remove voids | |
DE4210400C1 (en) | Local copper@ deposition from organo:metallic film on substrate - by forming film from mixt. of copper acetate and copper formate in specified ratio and depositing film by laser irradiation | |
DE1640574A1 (en) | Process for the metallization of objects made of plastic or for the production of objects which have one or more metal layers adhering to a plastic carrier layer | |
DE2205670A1 (en) | Photomask and method for producing abrasion-resistant metal layers for such a photomask and the like | |
DE1766297A1 (en) | Method for adapting an integrated circuit to a substrate serving as a carrier | |
DE872065C (en) | Process for the production of sheets provided with deformable foils, for television sets and the like. like | |
DE2147573C2 (en) | Process for the production of microelectronic circuits | |
DE3782389T2 (en) | "LIFT-OFF" METHOD FOR THE PRODUCTION OF PATHWAYS ON A SUBSTRATE. | |
DE1521313A1 (en) | Process for making thin layers | |
EP0136364B1 (en) | Method and apparatus for the selective and self-adjusting deposition of metal layers and application of this method | |
DE3877437T2 (en) | METHOD FOR THE PRODUCTION OF SUBSTRATES FOR NO-STREAM ELECTRICITY METALLIZATION. | |
DE102021118242A1 (en) | PROCESS FOR MAKING A WATERPROOF CIRCUIT BOARD | |
DE2310736A1 (en) | METHOD OF REPAIRING BROKEN METAL SAMPLES | |
DE1590786B1 (en) | Process for the production of micro-miniature circuits or circuit components | |
EP0543045B1 (en) | Process for manufacturing printed circuit boards | |
DE69228374T2 (en) | Manufacturing method for a film carrier type substrate | |
DE644713T1 (en) | CIRCUIT BOARD PRE-COATED WITH SOLE METAL AND METHOD FOR THE PRODUCTION THEREOF. | |
DE2650817A1 (en) | Phase mask with amplitude structure prodn. - by photolithography and evapn. avoids justification problems | |
DE69033234T2 (en) | Process for multilayer metallization of the back of a semiconductor wafer | |
DE1790082A1 (en) | Metal layer resistance element | |
DE3347038C2 (en) | Process for coating substrates with metals |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
8100 | Publication of the examined application without publication of unexamined application | ||
D1 | Grant (no unexamined application published) patent law 81 | ||
8364 | No opposition during term of opposition | ||
8339 | Ceased/non-payment of the annual fee |