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DE3837458A1 - Method for producing a fuse link by bonding, as well as a fuse link - Google Patents

Method for producing a fuse link by bonding, as well as a fuse link

Info

Publication number
DE3837458A1
DE3837458A1 DE3837458A DE3837458A DE3837458A1 DE 3837458 A1 DE3837458 A1 DE 3837458A1 DE 3837458 A DE3837458 A DE 3837458A DE 3837458 A DE3837458 A DE 3837458A DE 3837458 A1 DE3837458 A1 DE 3837458A1
Authority
DE
Germany
Prior art keywords
wire
bond
metal body
fuse
bonding
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
DE3837458A
Other languages
German (de)
Other versions
DE3837458C2 (en
Inventor
Bernd Dipl Ing Froechte
Annette Grothues
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Wickmann Werke GmbH
Original Assignee
Wickmann Werke GmbH
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Wickmann Werke GmbH filed Critical Wickmann Werke GmbH
Priority to DE3837458A priority Critical patent/DE3837458C2/en
Publication of DE3837458A1 publication Critical patent/DE3837458A1/en
Application granted granted Critical
Publication of DE3837458C2 publication Critical patent/DE3837458C2/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/80Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L24/85Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B23MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23KSOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K20/00Non-electric welding by applying impact or other pressure, with or without the application of heat, e.g. cladding or plating
    • B23K20/10Non-electric welding by applying impact or other pressure, with or without the application of heat, e.g. cladding or plating making use of vibrations, e.g. ultrasonic welding
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01HELECTRIC SWITCHES; RELAYS; SELECTORS; EMERGENCY PROTECTIVE DEVICES
    • H01H85/00Protective devices in which the current flows through a part of fusible material and this current is interrupted by displacement of the fusible material when this current becomes excessive
    • H01H85/02Details
    • H01H85/04Fuses, i.e. expendable parts of the protective device, e.g. cartridges
    • H01H85/05Component parts thereof
    • H01H85/143Electrical contacts; Fastening fusible members to such contacts
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    • HELECTRICITY
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    • H01RELECTRICALLY-CONDUCTIVE CONNECTIONS; STRUCTURAL ASSOCIATIONS OF A PLURALITY OF MUTUALLY-INSULATED ELECTRICAL CONNECTING ELEMENTS; COUPLING DEVICES; CURRENT COLLECTORS
    • H01R43/00Apparatus or processes specially adapted for manufacturing, assembling, maintaining, or repairing of line connectors or current collectors or for joining electric conductors
    • H01R43/02Apparatus or processes specially adapted for manufacturing, assembling, maintaining, or repairing of line connectors or current collectors or for joining electric conductors for soldered or welded connections
    • H01R43/0207Ultrasonic-, H.F.-, cold- or impact welding
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    • H01H69/00Apparatus or processes for the manufacture of emergency protective devices
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    • H01H2069/027Manufacture of fuses using ultrasonic techniques
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    • H01H85/02Details
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    • H01L2924/01Chemical elements
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    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
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    • H01L2924/1901Structure
    • H01L2924/1904Component type
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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
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  • Fuses (AREA)

Abstract

The invention relates to a method for producing an electrical connection between two contact surfaces with the aid of a wire, by bonding, in order to form a fuse link. Varying the parameters during bonding results in protective deformation of the bonded attachment and, in addition, the wire guidance is varied such that there is no need for bending up after the first bonded attachment and for bending down for the second bonded attachment. In a development, solutions are indicated as to how uninfluenced base material is used for the actual fuse path. The invention also relates to a suitably constructed fuse link.

Description

Die Erfindung betrifft ein Verfahren zur Herstellung einer elektrischen Verbindung zwischen zwei Kontaktflächen mit Hilfe eines Drahtes durch Bonden zur Bildung einer Schmelz­ sicherung, bei dem ein Bondkopf den am Kopf entlang unter eine stirnseitige Quetschfläche geführten Draht zuerst auf die eine Kontaktfläche aufsetzt und unter gleichzeitiger Betätigung einer Ultraschallquelle verformt und damit befestigt und anschließend bei gleichzeitigem Auslaufen­ lassen des Drahtes aus der Führung über die zweite Kontakt­ fläche führt und den Draht in gleicher Weise befestigt. Außerdem betrifft die Erfindung eine Schmelzsicherung, die im wesentlichen aus zwei Kontaktflächen und einem durch Bonden auf die Kontaktflächen aufgebrachten Schmelzdraht besteht.The invention relates to a method for producing a electrical connection between two contact surfaces with Help a wire by bonding to form a melt fuse, in which a bond head runs along the head under an end-side crimped wire first on the one contact surface and at the same time Deformed actuation of an ultrasound source and thus attached and then with simultaneous leakage let the wire out of the guide over the second contact leads and fixed the wire in the same way. The invention also relates to a fuse,  which essentially consist of two contact surfaces and one by fusing wire applied to the contact surfaces consists.

Das Bonden von Schmelzdrähten bei Schmelzsicherungen ist im Gegensatz zu einer Befestigung des Schmelzdrahtes durch Löten aus zwei Gründen attraktiv. Zum einen kann eine entsprechende Sicherung bei der sogenannten SMD-Technik (Surface Mounted Device) für die Befestigung auf einer Leiterplatte oder auf einem Chip auf Lottemperatur erwärmt werden, ohne daß der Zusammenhalt zwischen jeder Kon­ taktfläche und dem Schmelzdraht gefährdet ist oder Veränderungen der Verbindung befürchtet werden müssen.The bonding of fuse wires for fuses is in contrast to fixing the fuse wire through Soldering is attractive for two reasons. For one, one can appropriate security with the so-called SMD technology (Surface Mounted Device) for mounting on a Printed circuit board or on a chip heated to solder temperature be without the cohesion between each Kon tact area and the fuse wire is at risk or changes the connection must be feared.

Aus diesem Grunde wird in der DE-OS 37 31 969 vorgeschlagen, im Befestigungs­ bereich einen ummantelten Schmelzleiter durch Bonden auf einer Kontaktfläche aufzubringen, wobei die Ummantelung die Nachteile des Bondens beseitigen soll. Zum anderen ist die Alterung besser beherrschbar, was insbesondere für Impulsbelastungen gilt. Bei angelöteten Schmelzdrähten kommt es nämlich bei einer hohen Impulszahl zu Diffusionsvor­ gängen zwischen dem Lot und dem Schmelzdraht, mit der Folge, daß eine hohe Impulsbelastung die Lebensdauer der Sicherung stark herabsetzt.For this reason is proposed in DE-OS 37 31 969, in the attachment area of a coated fuse element by bonding to apply a contact surface, the sheathing to eliminate the disadvantages of bonding. On the other hand aging is more manageable, which in particular applies to impulse loads. With soldered fusible wires This is because diffusion occurs with a high number of impulses pass between the solder and the fuse wire with which Consequence that a high impulse load the life of the Fuse greatly reduced.

Die beim Bonden auftretenden Nachteile sind in der DE-OS 37 31 969 ausführlich beschrieben. Im wesentlichen handelt es sich um Mikrorisse im Randbereich der Bondbefestigungen, die bei üblichen Verwendungen von Bonds für den elektrischen Anschluß von Chips und dergleichen kaum ins Gewicht fallen, weil sie sich durch die geringe elektrische Belastung so gut wie nicht auswirken. Bei einer Schmelzsicherung tritt jedoch regelmäßig eine thermische Belastung auf, die dazu führen kann, daß die Mikrorisse sich fortpflanzen, so daß nach einer gewissen Einschaltzahl eine Veränderung der elektrischen Werte eintritt. Das tückische an Mikrorissen ist gerade, daß sie unmittelbar nach der Herstellung einer Bondbefestigung durch elektrische Tests so gut wie nicht feststellbar sind, sich später jedoch nachteilig infolge einer spürbaren Querschnittsverringerung bemerkbar machen. The disadvantages that occur during bonding are in DE-OS 37 31 969 described in detail. Essentially acts micro cracks in the edge area of the bond fastenings, the usual uses of bonds for electrical Connection of chips and the like are of little importance, because of the low electrical load next to no effect. With a fuse however, thermal stress occurs regularly, which can cause the microcracks to propagate, so that after a certain number of starts a change in the electrical values. The tricky thing about micro cracks is that immediately after making one Bonding by means of electrical tests is practically non-existent are noticeable, but later adversely as a result noticeable reduction in cross-section.  

Die Verwendung von ummantelten Schmelzleitern zum Bonden, bei denen die Ummantelung im eigentlichen Arbeitsbereich des Schmelzdrahtes nach dem Bonden durch Ätzen entfernt wird, hat sich bewährt und hat vor allen Dingen die erhoffte Wirkung gehabt, daß sich eventuelle Mikrorisse im Bereich der Bondbefestigung nicht nachteilig auf die Lebensdauer oder Funktion einer Schmelzsicherung aus­ wirken.The use of coated fusible conductors for bonding, where the sheathing in the actual work area of the fuse wire is removed by etching after bonding has proven itself and above all has that hoped effect that possible micro cracks in the area of bond attachment not disadvantageous to the Life or function of a fuse Act.

Das Verfahren ist jedoch relativ aufwendig, weil eine Abdeckung des Befestigungsbereiches, ein anschließendes Ätzen und die Reinigung im Produktionsablauf enthalten sein müssen. Dadurch entstehen Störmöglichkeiten, im übrigen wird eine Schmelzsicherung dadurch bezüglich der Kosten belastet. Es ist daher Aufgabe der Erfindung, ein Verfahren der eingangs genannten Art so abzuändern, daß unummantelte Schmelzleiter durch Bonden an den Kontaktflächen befestigt werden und trotzdem die Ergebnisse von im Befestigungsbereich ummantelten Schmelzleitern erzielt werden.However, the process is relatively complex because of a Covering the fastening area, a subsequent one Etching and cleaning included in the production process have to be. This creates interference, for the rest becomes a fuse in terms of cost charged. It is therefore an object of the invention to provide a method of the type mentioned in such a way that uncovered Fusible conductor fixed to the contact surfaces by bonding and still be the results of in the mounting area sheathed fusible conductors can be achieved.

Zur Lösung dieser Aufgabe schlägt die Erfindung folgende Merkmale und Schritte vor:To achieve this object, the invention proposes the following Features and steps ahead:

  • a) Bereitstellen eines einteiligen Metallkörpers, der die beiden niveaugleichen Kontaktflächen enthält,a) Providing a one-piece metal body, the which contains two level contact surfaces,
  • b) schwaches Verformen des Drahtes beim Quetschen,b) weak deformation of the wire during crimping,
  • c) starke Ultraschalldosis, kurze Zeitdauer,c) strong ultrasound dose, short duration,
  • d) flache Verfahrkurve des Bondkopfes von einer Kontakt­ fläche zur anderen ohne nennenswerte Aufbiegung des Drahtes nach der ersten Befestigung,d) flat travel curve of the bond head from a contact surface to the other without significant bending of the Wire after the first attachment,
  • e) Verbinden der beiden Kontaktflächen durch ein Gehäuse und e) connecting the two contact surfaces by a housing and  
  • f) Abtrennen der Metallkörperreste bis auf jeweils eine Anlötfläche an jeder Kontaktfläche.f) separating the metal body residues apart from one Soldering surface on every contact surface.

Der übliche Ablauf einer Bondbefestigung besteht aus dem Aufsetzen des Bondkopfes auf die Kontaktfläche, wobei zwischen dem Bondkopf und der Kontaktfläche der Schmelz­ draht geführt ist. Nach dem Verformen des Schmelzdrahtes durch Quetschen unter gleichzeitiger Anwendung einer Ultra­ schalldosis, die in der Regel vom Bondkopf her aufgebracht wird, wird der Bondkopf vertikal nach oben gezogen, und zwar um einen Betrag, der unter anderem von der Entfernung zu der nächsten, zu kontaktierenden Kontaktfläche bestimmt wird. Nach dem Hochfahren wird der zweite Bondpunkt angefahren und durch Absenken des Kopfes die Kontaktierung zu der zweiten Kontaktfläche hergestellt.The usual procedure for a bond attachment consists of the Placing the bondhead on the contact surface, whereby between the bondhead and the contact surface of the enamel wire is guided. After deforming the fuse wire by squeezing while using an Ultra sound dose, which is usually applied from the bondhead the bond head is pulled vertically upwards, and by an amount that depends, among other things, on the distance to the next contact surface to be contacted becomes. After starting up, the second bond point is approached and by lowering the head the contact to the second contact surface.

Während dieser Schritte wird der zu Beginn festgebondete Draht beim Hochfahren des Bondkopfes aufwärts gebogen und anschließend um einen Bruchteil der Aufbiegung wieder zurückgebogen, wenn nämlich der Bondkopf die zweite Be­ festigungsstelle erreicht hat und abgesenkt wird. Im Er­ gebnis führt das dazu, daß die ohnehin durch die Quetschung kaltverfestigte Zone unmittelbar neben der Bondbefestigung noch zweimal stark verformt wird, nämlich durch das Auf­ biegen und das anschließende erneute Flachbiegen des Drahtes. Es hat sich gezeigt, daß an dieser Biegestelle aufgrund der starken und häufigen Verformung die Bildung von Mikro­ rissen besonders wahrscheinlich ist. Hier schafft die Erfindung Abhilfe.During these steps, the one that is initially bonded The wire is bent upwards when the bond head is raised and then a fraction of the bend again bent back, namely when the bondhead the second loading has reached the consolidation point and is lowered. In the Er The result is that the bruises anyway strain-hardened zone immediately next to the bond attachment is deformed twice more, namely by opening bend and then flat bend the wire again. It has been shown that due to this bending point the strong and frequent deformation the formation of micro tearing is particularly likely. Here she creates Invention remedy.

Zunächst wird durch eine besonders schonende Verformung der Grad der Kaltverfestigung und damit die Versprödung an der Stelle der Bondbefestigung stark eingeschränkt. Die geringe Verformung bedingt eine relativ kurze, jedoch hohe Ultraschalldosis, damit überhaupt ein befriedigender elektrischer Kontakt zwischen dem Schmelzdraht und der Kontakt­ fläche zustandekommt. Die hohe Überschalldosis bedingt z.B. den Einsatz von Metallkörpern als Träger der Kontaktflächen, aber auch dünne Substrate aus Aluminiumoxid oder sonstiger Keramik können unter bestimmten Voraussetzungen eingesetzt werden.First, through a particularly gentle deformation the degree of work hardening and thus the embrittlement severely restricted at the point of bond attachment. The slight deformation requires a relatively short, however high ultrasound dose, so a satisfactory one at all electrical contact between the fuse wire and the contact area comes about. The high supersonic dose causes e.g. the Use of metal bodies as carriers of the contact surfaces,  but also thin substrates made of aluminum oxide or other Ceramics can be used under certain conditions.

Ein weiteres wichtiges Merkmal besteht darin, daß der Bondkopf nicht in üblicher Weise vertikal von der Kontakt­ fläche weg nach oben bewegt wird, sondern in einer flachge­ streckten Kurve in Richtung auf die niveaugleiche, zweite Kontaktfläche, so daß die erläuterten zwei Verformungen durch Biegen entfallen. Statt dessen wird der Bondkopf in Richtung des ohnehin durch die Bondverformung leicht aufwärtsgerichteten Drahtabschnittes bewegt, so daß keine Biegewechselbeanspruchung des Drahtes unmittelbar neben der Bondbefestigung eintritt.Another important feature is that the Bond head not vertical in the usual way from the contact surface is moved upwards, but in a flat area stretched curve towards the same level, second Contact surface, so that the explained two deformations by bending. Instead, the bondhead towards anyway due to the bond deformation easily upward wire section moved so that none Alternating bending stress of the wire immediately next to it the bond attachment occurs.

Nach dem Bonden kommt es darauf an, daß die beiden Kontakt­ flächen trotz Entfernen der Metallkörperreste nicht mehr zueinander bewegt werden oder so gut wie nicht mehr zu­ einander bewegt werden, damit der Schmelzdraht und die Bondbefestigungen nicht beschädigt werden. Hier bietet sich der Einsatz des Gehäuses, das die Kontaktflächen später umgibt, als Stabilitätshilfe an. Selbstverständlich können auch andere Vorrichtungen eingesetzt werden, die eine reine Hilfsfunktion haben, wenn nach dem Bonden in dem Montageablauf der Einsatz des Gehäuses noch nicht an der Reihe ist oder aus anderen Gründen auf ein Gehäuse herkömmlicher Art verzichtet wird. Es kommt lediglich darauf an, daß die Kontaktflächen nach dem Bonden zueinander dieselbe Relativlage einnehmen und endgültig geklemmt, geschweißt, geklebt oder eingegossen werden.After bonding it is important that the two contact no longer surface despite removing the metal body remnants are moved towards each other or almost no longer are moved so that the fuse wire and the Bond fastenings are not damaged. Here offers the use of the housing covering the contact areas surrounds later, as a stability aid. Of course can also be used other devices that have a purely auxiliary function if after bonding in the use of the housing is not yet the assembly process it is your turn or for other reasons on a case conventional type is dispensed with. It just comes insist that the contact surfaces after bonding to each other take the same relative position and finally clamped, welded, glued or cast.

Als Drahtmaterial für den Schmelzleiter kommen insbesondere Gold und Aluminium bzw. deren Legierungen in Frage. Wenn ein Metallkörper aus Kupfer gewählt wird, muß im Bondbereich eine Goldbeschichtung vorhanden sein. Damit diese nicht in das Kupfer hineindiffundiert, muß als Diffusionssperre zwischen dem Kupfer und dem Gold eine Nickelschicht auf das Kupfer aufgebracht sein, auf die dann die Goldbeschichtung zum Beispiel in einer Stärke von 0,2 bis 2 µm auf­ getragen wird. Bei Drähten aus Aluminium oder Aluminium­ legierungen genügt ein mit Aluminium beschichtetes Kupfer­ blech als Metallkörper, wobei die jeweiligen Beschichtungen galvanisch, durch Walzplattieren oder in sonstiger Weise aufgebracht werden können. Die Metallkörper werden vorzugs­ weise durch Stanzen hergestellt. Dabei ist darauf zu achten, daß der unvermeidbare Stanzgrad beim Bonden dem Bondkopf zugewandt ist, damit der Metallkörper satt auf seiner Unterlage aufliegt und so die Schallenergie der Ultraschall­ dosis auch tatsächlich bis zur Fügestelle gelangt.In particular come as wire material for the fuse element Gold and aluminum or their alloys in question. If a metal body made of copper must be selected in the bond area gold plating. So that this doesn't diffused into the copper must act as a diffusion barrier a layer of nickel between the copper and the gold the copper can be applied to which then the gold plating for example in a thickness of 0.2 to 2 µm  will be carried. For wires made of aluminum or aluminum Alloys require a copper coated with aluminum sheet as a metal body, the respective coatings galvanically, by roll cladding or in any other way can be applied. The metal bodies are preferred wisely manufactured by punching. It is important to ensure that the inevitable degree of punching when bonding the bondhead is facing so that the metal body is full on it Underlay and so the sound energy of the ultrasound dose actually reached the joint.

Bei gebräuchlichen Bondmaschinen befindet sich zum Abtrennen des Drahtes hinter dem Bondkopf eine Klammer, die nach dem letzten Bond geschlossen wird und eine Zugkraft auf die Bondstelle ausübt. Aufgrund der Querschnittsschwächung und Versprödung im Bereich reißt der Draht unmittelbar hinter der Bondbefestigung ab. Selbstverständlich ist der Abschnitt zwischen der Abreißstelle und der Klammer dann vorgereckt, also kaltverfestigt, weil er einer Streckung unterworfen worden ist, die so gut wie immer den plastischen Verformungsbereich erreicht. Wenn keine Gegenmaßnahmen getroffen werden, bildet dieser vorgereckte Abschnitt einen Teil des nächsten Schmelzdrahtes, der in einer Serien­ fertigung im Anschluß an den vorhergehenden auf zwei Kontakt­ flächen aufgebracht wird. Es wurde eingangs schon erläutert, daß ein vorgereckter Draht spröder ist als das reine Ausgangs­ material und deshalb mikrorißempfindlicher beim Bonden ist. Hinzu tritt die Veränderung im Kristallgefüge, so daß der elektrische Widerstand unvorteilhaft bzw. undefiniert verändert ist.In common bonding machines there is to be separated of the wire behind the bondhead a brace that follows the last bond is closed and a traction on exercises the bond position. Because of the cross-sectional weakening and embrittlement in the area immediately breaks the wire behind the bond attachment. It goes without saying the section between the tear-off point and the bracket then pre-stretched, i.e. work-hardened, because it is stretched has been subjected to, almost always, the plastic Deformation area reached. If no countermeasures this stretched section forms part of the next fuse wire that is in a series manufacturing following the previous on two contact surfaces is applied. It was already explained at the beginning that a pre-stretched wire is more brittle than the pure exit material and therefore more sensitive to microcracks when bonding is. Added to this is the change in the crystal structure, see above that the electrical resistance is disadvantageous or undefined is changed.

In Weiterbildung der Erfindung wird deshalb vorgeschlagen, daß der ersten Bondbefestigung eine weitere, nullte Bond­ befestigung vorgelagert und der zweiten eine weitere dritte Bondbefestigung nachgeordnet wird, und daß die weiteren Bondbefestigungen mit den anderen durch denselben Draht direkt verbunden sind. Durch diese Maßnahme wird der noch im Bondkopf enthaltene vorgereckte Abschnitt als Leerbogen auf der einen Kontaktfläche angebracht, wobei die Länge dieses Leerbogens so zu wählen ist, daß er den vorgereckten Abschnitt sicher verbraucht. Für den eigentlichen Schmelzbe­ reich des Schmelzleiters wird dann ungerecktes Ausgangs­ material verwendet, das folglich die besten Voraussetzungen für eine einwandfreie Funktion mit sich bringt.In a development of the invention it is therefore proposed that the first bond attachment a further, zero bond fastening upstream and the second another third Bond attachment is subordinated, and that the further Bond attachments to the others through the same wire are directly connected. This measure will still stretched section contained in the bondhead as an empty sheet attached to one contact surface, the length This blank should be chosen so that it is the pre-stretched one  Section safely used up. For the actual melting pot rich of the fuse element then becomes unstretched output material used, which consequently provides the best conditions for a perfect function.

Nach der Fertigstellung der zweiten Bondbefestigung am Ende des eigentlichen Schmelzleiterabschnittes würde das beschriebene Abtrennen des Drahtes durch Abreißen eine Gefahr für diese zweite Bondbefestigung mit sich bringen, da deren Parameter ausschließlich im Hinblick auf die elektrische Leitfähigkeit und nicht im Hinblick auf eine hohe Festigkeit ausgelegt sind. Zur Sicherheit wird also ein weiterer Leerbogen angesetzt und mit einer dritten Bondbefestigung abgeschlossen. Diese wiederum kann aus­ schließlich nach Festigkeitsgesichtspunkten durchgeführt werden, also mit einer relativ starken Verformung und einer relativ schwachen Ultraschalldosis bei langer Ein­ wirkdauer. Danach wird der Draht in üblicher Weise abge­ rissen, wobei infolge der Entkoppelung durch den zweiten Leerbogen eine Beeinflussung der eigentlichen Schmelzleiter­ strecke nicht mehr zu befürchten ist. Eine entsprechend gestaltete Schmelzsicherung ist im Anspruch 9 unter Schutz gestellt. Es versteht sich von selbst, daß die Leerbögen annähernd beliebig geformt sein können. Selbst wenn später durch Schwingungen oder sonstige Beanspruchungen einer der Leerbögen oder beide Leerbögen an irgendeiner Stelle durchtrennt werden, hat das keinen Einfluß auf die Funktion der Sicherung, solange die erste und zweite Bondbefestigung zu beiden Seiten des Schmelzabschnittes in Ordnung sind.After completion of the second bond attachment on That would end of the actual fuse element section described cutting off the wire by tearing off a Bring with it danger for this second bond attachment, because their parameters are only with regard to the electrical conductivity and not with regard to one high strength are designed. So for security another blank sheet and a third one Bond attachment completed. This in turn can finally carried out according to strength considerations with a relatively strong deformation and a relatively weak ultrasound dose with a long on duration of action. The wire is then removed in the usual way cracked, due to the decoupling by the second Blank sheet influences the actual fuse element stretch is no longer to be feared. A corresponding one designed fuse is in claim 9 under protection posed. It goes without saying that the blank sheets can be shaped almost arbitrarily. Even if later due to vibrations or other stresses on a the blank sheets or both blank sheets at any point being cut has no effect on the function the fuse as long as the first and second bond attachment are fine on both sides of the melting section.

Nachfolgend werden Ausführungsbeispiele der Erfindung, die in der Zeichnung näher dargestellt sind, näher erläutert; in der Zeichnung zeigen:Exemplary embodiments of the invention are which are shown in more detail in the drawing, explained in more detail; show in the drawing:

Fig. 1 eine schematische Querschnittsansicht eines bevorzugten Ausführungsbeispiels einer Schmelzsicherung gemäß der Erfindung, hergestellt nach dem unter Schutz ge­ stellten Verfahren, Fig. 1 is a schematic cross-sectional view of a preferred embodiment of a fuse according to the invention, prepared according to the method presented under protective ge,

Fig. 2 eine Querschnittsansicht einer sogenannten SMD-Sicherung, hergestellt gemäß dem unter Schutz gestellten Verfahren und Fig. 2 is a cross-sectional view of a so-called SMD fuse, manufactured according to the protected method and

Fig. 3 bis 5 schematische Draufsichten auf Metallkörper­ konfigurationen für die Verwirklichung einer Massenfertigung nach dem unter Schutz gestellten Verfahren. Fig. 3 to 5 schematic plan views of metal body configurations for the realization of mass production according to the protected process.

In der Fig. 1 ist schematisch der prinzipielle Aufbau einer Schmelzsicherung gemäß der Erfindung wiedergegeben. An den sich gegenüberliegenden Enden zweier Blechstreifen 1, deren Grundmaterial beispielsweise aus Kupfer besteht, befinden sich zwei Kontaktflächen 2, zu deren Überbrückung zur Bildung einer Schmelzsicherung ein Schmelzleiter 3 aufgebracht ist. Der Schmelzleiter besteht beispielsweise aus einem Golddraht von wenigen Hundertstelmillimetern Dicke, wobei dann die Blechstreifen mit einer Nickelschicht und im Kontaktflächenbereich mit einer hauchdünnen Goldschicht überzogen sind.In FIG. 1, the basic structure is schematically represented a fuse according to the invention. At the opposite ends of two sheet metal strips 1 , the base material of which is made of copper, for example, there are two contact surfaces 2 , a fuse element 3 being applied to bridge them to form a fuse. The fusible conductor consists, for example, of a gold wire a few hundredths of a millimeter thick, in which case the sheet metal strips are coated with a nickel layer and in the contact area area with a wafer-thin gold layer.

Der Schmelzleiter 3 ist insgesamt in drei Abschnitte unter­ teilt, nämlich in den eigentlichen Schmelzabschnitt 5 und zwei Leerbögen 6 und 7 zu beiden Seiten des Schmelz­ abschnittes 5. Bei der Befestigung des Schmelzleiters 3 ist folgender Ablauf zu beobachten:The fuse element 3 is divided into three sections, namely in the actual melting section 5 and two blank sheets 6 and 7 on both sides of the melting section 5 . The following sequence can be observed when attaching the fuse element 3 :

Zunächst wird mit einem üblichen Bondkopf (nicht dargestellt) eine erste Bondbefestigung 4/0 auf der einen Kontaktfläche 2 aufgebracht und der in dieser Weise befestigte Schmelzdraht zu dem ersten Leerbogen 6 gekrümmt. Innerhalb des Leerbogens 6 befindet sich derjenige Abschnitt, der bei dem vorher­ gehenden Trennvorgang mehr oder minder stark vorgereckt und zwar ausschließlich nach den Gesichtspunkten eines guten elektrischen Kontaktes zwischen der Kontaktfläche 2 und dem Schmelzleiter 3 und unter dem Gesichtspunkt der Schonung des Drahtes, also mit einer relativ geringen Verformung ohne Mikrorisse.First, with a conventional bonding head (not shown), a first bonding attachment 4/0 is applied to one contact surface 2 and the fuse wire fastened in this way is curved to form the first empty sheet 6 . Within the blank sheet 6 is the section which is more or less pre-stretched in the preceding separation process and that solely from the point of view of good electrical contact between the contact surface 2 and the fusible conductor 3 and from the point of view of protecting the wire, i.e. with a relatively small deformation without micro cracks.

Im Anschluß daran wird der Bondkopf flach zu der anderen Kontaktfläche 2 hinübergeführt, so daß an der Bondbefestigung 4/1 keine Aufbiegung und anschließende Niederbiegung ent­ steht, sondern die durch die Bondverbindung ohnehin leicht aufwärtsweisende Stellung in natürlicher Weise fortgesetzt wird. Im Anschluß daran wird die Bondbefestigung 4/2 vorge­ nommen, und zwar wiederum nach denselben Gesichtspunkten, nach denen die Bondverbindung 4/1 vorgenommen worden ist. Aufgrund der Rücksichtnahme auf die elektrischen Belange ist die Festigkeit der Bondbefestigung 4/2 u.U. relativ gering. so daß ein weiterer Leerbogen 7 mit einer abschließenden Bondverbindung 4/3 vorgenommen wird. Diese Bondbefestigung 4/3 kann sorglos als Fixpunkt zum Abreißen des Schmelz­ drahtes 3 angesetzt werden, da sie ausschließlich nach Festigkeitsgesichtspunkten ausgelegt ist.Subsequently, the bond head is led flat over to the other contact surface 2 , so that there is no bending and subsequent bending down on the bond attachment 4/1 , but the position which is slightly upward anyway is continued in a natural way by the bond connection. Subsequently, the 4/2 bond attachment is made, again in accordance with the same criteria according to which the bond connection 4/1 has been made. Due to the consideration of the electrical concerns, the strength of the 4/2 bond attachment may be relatively low. so that another blank sheet 7 is made with a final bond 4/3 . This bond attachment 4/3 can be used as a fixed point for tearing off the melting wire 3 , because it is designed solely for strength reasons.

Anhand der Fig. 2 können die typischen Verfahrensschritte für das erfindungsgemäße Verfahren besonders deutlich erläutert werden. Zunächst wird an die sich gegenüber­ liegenden Blechstreifen ein Schmelzleiter 3 angebondet. Dabei kann in der im Zusammenhang mit der Fig. 1 ge­ schilderten Weise vorgegangen werden, oder das erfindungs­ gemäße Verfahren wird in seiner einfachsten Form angewandt, also unter Einsatz lediglich zweier Bondbefestigungen.The typical method steps for the method according to the invention can be explained particularly clearly on the basis of FIG. 2. First, a fuse element 3 is bonded to the sheet metal strips lying opposite one another. It can be done in the manner described in connection with FIG. 1, or the method according to the invention is used in its simplest form, that is to say using only two bond attachments.

Im Anschluß daran wird ein zweiteiliges Gehäuse um die Blechstreifen 1 herumgelegt und endgültig befestigt, bei­ spielsweise durch Schnappverschlüsse, Kleber oder durch Umspritzen. In der Fig. 2 sind ein Gehäuseboden 8 und ein Gehäusedeckel 9 zu erkennen, die in nicht näher darge­ stellter Weise aufeinandergerastet werden. Die dann noch in sich ebenen Blechstreifen 1 werden dann von einem Metall­ körperrest befreit, so daß sie als in sich ebene Streifen seitlich aus dem Gehäuse herausstehen, was in der Fig. 2 durch gestrichelte Linien und das Bezugszeichen 1′ jeweils angedeutet ist. Nachfolgend werden diese freien Enden der Blechstreifen unter den Gehäuseboden 8 gebogen, so daß ins­ gesamt eine SMD-Sicherung entsteht. Die Länge einer tatsächlich ausgeführten Schmelzsicherung beträgt z.B. 6 mm oder weniger.Subsequently, a two-part housing is placed around the sheet metal strip 1 and finally attached, for example by snap locks, glue or by extrusion coating. In Fig. 2, a housing base 8 and a housing cover 9 can be seen, which are snapped together in a manner not shown Darge. The then flat sheet metal strips 1 are then freed from a metal body residue, so that they protrude laterally from the housing as a flat strip, which is indicated in FIG. 2 by dashed lines and the reference numeral 1 '. These free ends of the metal strips are then bent under the housing base 8 , so that an SMD fuse is created overall. The length of a fuse actually implemented is, for example, 6 mm or less.

In den Fig. 3, 4 und 5 sind durch Stanzen entstandene Muster von Metallkörpern 10, 10′ und 10′′ wiedergegeben, die bei der Produktion gemäß dem erfindungsgemäßen Ver­ fahren eine Vorstufe zur Bereitstellung der Blechstreifen 1 mit den Kontaktflächen 2 bilden. Bei dem Metallkörper 10 gemäß der Fig. 3 handelt es sich um ein Kupferblech, das mit einer Nickelschicht belegt ist. Im Bereich der Kontaktflächen 2 ist eine hauchdünne Goldschicht von 0,5 oder 2 µm Dicke aufgebracht, wobei die Nickelschicht als Diffusionssperre zum Kupfer dient. Nach dem Aufbonden des Schmelzdrahtes 3 wird um die Blechstreifen, die je­ weils die Kontaktfläche 2 enthalten, das Gehäuse herum­ gelegt, was anhand der Fig. 2 genauer erläutert worden ist. Im Anschluß daran werden entlang den strichpunktierten Linien Schnitte gelegt, so daß die in der Fig. 2 ge­ strichelt dargestellte Form der Blechstreifen 1 entsteht.In Figs. 3, 4 and 5 are by punching resulting pattern of metal bodies 10, 10 'and 10' 'shown that in the production according to the Ver invention drive a precursor for providing the sheet-metal strip 1 with the contact pads 2 form. The metal body 10 according to FIG. 3 is a copper sheet which is coated with a nickel layer. A wafer-thin gold layer of 0.5 or 2 μm thick is applied in the area of the contact surfaces 2 , the nickel layer serving as a diffusion barrier to the copper. After the fuse wire 3 has been bonded on, the housing is placed around the metal strips, each containing the contact surface 2 , which has been explained in more detail with reference to FIG. 2. Following this, cuts are placed along the dash-dotted lines, so that the shape of the metal strip 1 shown in dashed lines in FIG. 2 is created.

Anhand der Fig. 4 wird verdeutlicht, daß diese Anordnung annähernd beliebig vervielfacht werden kann, um eine Massen­ fertigung mit hohen Stückzahlen zu verwirklichen. Die Fig. 5 zeigt ein Ausführungsbeispiel, das durch weniger Stabilität, jedoch durch geringeren Abfall auf der Seite des Metallkörpers 10′′ gekennzeichnet ist. Im Falle der Metallkörper 10′ und 10′′ gemäß den Fig. 4 und 5 wird ein mit Aluminium walzplattiertes Kupferblech eingesetzt, wodurch dann festgelegt ist, daß der Schmelzleiter 3 eben­ falls aus Aluminium oder aus einer Aluminiumlegierung besteht. Zwar lassen sich mit Aluminium nicht gerade optimale elektrische Eigenschaften verwirklichen, da jedoch Aluminium wesentlich kostengünstiger ist als Gold, reicht für bestimmte Anwendungsfälle dieses Material vollkommen aus.On the basis of Fig. 4 is illustrated, that this arrangement can be multiplied approximately as desired, for a mass production to achieve high volume. Fig. 5 shows an embodiment which is characterized by less stability, but by less waste on the side of the metal body 10 ''. In the case of the metal body 10 'and 10 ''according to FIGS. 4 and 5, an aluminum roll-clad copper sheet is used, whereby it is then determined that the fuse element 3 is also made of aluminum or an aluminum alloy. Although it is not possible to achieve optimal electrical properties with aluminum, since aluminum is much cheaper than gold, this material is completely sufficient for certain applications.

Claims (10)

1. Verfahren zur Herstellung einer elektrischen Ver­ bindung zwischen zwei Kontaktflächen mit Hilfe eines Drahtes durch Bonden zur Bildung einer Schmelzsicherung, bei dem ein Bondkopf den am Kopf entlang unter eine stirnseitige Quetschfläche geführten Draht zuerst auf die eine Kontaktfläche aufsetzt und unter gleich­ zeitiger Betätigung einer Ultraschallquelle verformt und damit befestigt und anschließend bei gleichzeitigem Auslaufenlassen des Drahtes aus der Führung über die zweite Kontaktfläche fährt und den Draht in gleicher Weise befestigt, gekennzeichnet durch die Verfahrensmerkmale und -schritte:
  • a) Bereitstellen eines einteiligen Metallkörpers, der die beiden niveaugleichen Kontaktflächen ent­ hält,
  • b) schwaches Verformen des Drahtes beim Quetschen,
  • c) starke Ultraschalldosis, kurze Zeitdauer,
  • d) flache Verfahrkurve des Bondkopfes relativ zum Substrat von einer Kontaktfläche zur anderen ohne nennenswerte Aufbiegung des Drahtes nach der ersten Befestigung,
  • e) Verbinden der beiden Kontaktflächen durch ein Gehäuse und
  • f) Abtrennen der Metallkörperreste bis auf jeweils eine Anlötfläche an jeder Kontaktfläche.
1. A method for producing an electrical connection between two contact surfaces with the aid of a wire by bonding to form a fuse, in which a bonding head first places the wire guided along the head under an end-side squeezing surface onto the one contact surface and with simultaneous actuation of an ultrasound source deformed and thus fastened and then, while simultaneously allowing the wire to run out of the guide, moves over the second contact surface and fastens the wire in the same way, characterized by the process features and steps:
  • a) providing a one-piece metal body which holds the two level contact surfaces ent,
  • b) weak deformation of the wire during crimping,
  • c) strong ultrasound dose, short duration,
  • d) flat travel curve of the bond head relative to the substrate from one contact surface to the other without any significant bending of the wire after the first attachment,
  • e) connecting the two contact surfaces by a housing and
  • f) cutting off the metal body residues except for one soldering surface on each contact surface.
2. Verfahren nach Anspruch 1, dadurch gekenn­ zeichnet, daß der Metallkörper vor oder nach der Bereitstellung gänzlich oder partiell im Bereich der Kontaktfläche beschichtet wird.2. The method according to claim 1, characterized records that the metal body before or after the provision in whole or in part in the area the contact surface is coated. 3. Verfahren nach Anspruch 1 oder 2, dadurch ge­ kennzeichnet, daß als Metallkörper ein beschichtetes Ausgangsmaterial gewählt wird.3. The method according to claim 1 or 2, characterized ge indicates that as a metal body coated starting material is selected. 4. Verfahren nach einem der vorhergehenden Ansprüche, dadurch gekennzeichnet, daß als Metall­ körper ein mit Nickel beschichtetes Kupferblech ge­ wählt wird, das partiell goldbeschichtet wird, und das als Draht Gold oder dotiertes Gold gewählt wird.4. The method according to any one of the preceding claims, characterized in that as metal body is a copper sheet coated with nickel is selected, which is partially gold-coated, and which is chosen as wire gold or doped gold. 5. Verfahren nach einem der Ansprüche 1 bis 3, dadurch gekennzeichnet, daß als Metallkörper ein mit Aluminium beschichtetes Kupferblech gewählt wird, und daß als Draht Aluminium oder eine Aluminium­ legierung gewählt wird.5. The method according to any one of claims 1 to 3, characterized characterized that as a metal body a copper sheet coated with aluminum was chosen and that as a wire aluminum or an aluminum alloy is selected. 6. Verfahren nach einem der vorhergehenden Ansprüche, dadurch gekennzeichnet, daß der Metall­ körper durch Stanzen erzeugt wird, und daß der Stanz­ grad an den Kontaktflächen dem Bondkopf zugewandt wird.6. The method according to any one of the preceding claims, characterized in that the metal body is produced by stamping, and that the stamping facing the bonding head at the contact surfaces becomes. 7. Verfahren nach einem der vorhergehenden Ansprüche, dadurch gekennzeichnet, daß der ersten Bondbefestigung eine weitere, nullte Bondbefestigung vorgelagert und der zweiten eine weitere, dritte Bond­ befestigung nachgeordnet wird, und daß die weiteren Bondbefestigungen mit den anderen durch denselben Draht direkt verbunden sind. 7. The method according to any one of the preceding claims, characterized in that the first Bond attachment another, zero bond attachment upstream and the second another, third bond attachment is subordinate, and that the further Bond attachments with the others by the same Wire are connected directly.   8. Verfahren nach Anspruch 7, dadurch gekenn­ zeichnet, daß die Parameter der nullten und dritten Bondbefestigung ausschließlich nach Festig­ keitsgesichtspunkten gewählt werden, also eine relativ starke Verformung mit einer geringen Ultraschalldosis bei langer Einwirkdauer kombiniert wird.8. The method according to claim 7, characterized records that the parameters of the zeros and third bond attachment only according to Festig viewpoints are chosen, i.e. a relative severe deformation with a low ultrasound dose is combined with a long exposure time. 9. Schmelzsicherung, insbesondere hergestellt nach An­ spruch 7 oder 8, mit zwei Kontaktflächen und einem durch Bonden auf die Kontaktflächen aufgebrachten Schmelzdraht, dadurch gekennzeichnet, daß der Schmelzdraht (3) keine Ummantelung trägt, und daß zu beiden Seiten der Bondbefestigungen (4/1, 4/2) jeweils eine weitere Bondbefestigung (4/0, 4/3) desselben, verlängerten Schmelzdrahtes (3) vorgesehen ist.9. Fusible link, in particular manufactured according to claim 7 or 8, with two contact surfaces and a fusible wire applied by bonding to the contact surfaces, characterized in that the fusible wire ( 3 ) does not have a sheath, and that on both sides of the bond fastenings ( 4/1 , 4/2 ) each have a further bond attachment ( 4/0 , 4/3 ) of the same, elongated fuse wire ( 3 ) is provided. 10. Schmelzsicherung nach Anspruch 9, dadurch gekenn­ zeichnet, daß der Schmelzabschnitt (5) flach und die anderen beiden Abschnitte (6, 7) beliebig gekrümmt sind.10. A fuse according to claim 9, characterized in that the melting section ( 5 ) is flat and the other two sections ( 6 , 7 ) are curved as desired.
DE3837458A 1988-11-04 1988-11-04 Process for producing a fuse by bonding and fuse Expired - Fee Related DE3837458C2 (en)

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Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5136122A (en) * 1991-05-13 1992-08-04 Motorola, Inc. Braided fiber omega connector
DE4126533A1 (en) * 1991-08-10 1993-02-11 Ver Glaswerke Gmbh METHOD FOR CONTACTING ELECTRICALLY HEATABLE GLASS DISCS WITH TRANSPARENT HEATING RESISTANT LAYERS
DE19639279A1 (en) * 1996-09-25 1998-04-02 Abb Daimler Benz Transp Protection circuit for a semiconductor component that can be switched off
FR2842698A1 (en) * 2002-07-18 2004-01-23 Siemens Vdo Automotive Electronic circuit overvoltage protection having substrate with electrical conductor track each end and central section connected.
DE102005019571A1 (en) * 2005-04-27 2006-11-09 Siemens Ag Inverter arrangement, has bond wire sections with units for generation of damping resistances for reduction of rear oscillation in case of short-circuit of arrangement, where resistances act only in case of short circuit
WO2012016882A1 (en) * 2010-07-26 2012-02-09 Vishay Bccomponents Beyschlag Gmbh Thermal link

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3731969A1 (en) * 1986-10-03 1988-04-14 Wickmann Werke Gmbh Fuse link for direct fitting to printed circuit boards
DE3725438A1 (en) * 1987-03-24 1988-10-13 Cooper Ind Inc METHOD FOR PRODUCING A WIRED MICRO FUSE

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3731969A1 (en) * 1986-10-03 1988-04-14 Wickmann Werke Gmbh Fuse link for direct fitting to printed circuit boards
DE3725438A1 (en) * 1987-03-24 1988-10-13 Cooper Ind Inc METHOD FOR PRODUCING A WIRED MICRO FUSE

Cited By (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5136122A (en) * 1991-05-13 1992-08-04 Motorola, Inc. Braided fiber omega connector
DE4126533A1 (en) * 1991-08-10 1993-02-11 Ver Glaswerke Gmbh METHOD FOR CONTACTING ELECTRICALLY HEATABLE GLASS DISCS WITH TRANSPARENT HEATING RESISTANT LAYERS
US5299726A (en) * 1991-08-10 1994-04-05 Saint-Gobain Vitrage International "Les Miroirs" Connection for glazings having an electroconductive layer
DE19639279A1 (en) * 1996-09-25 1998-04-02 Abb Daimler Benz Transp Protection circuit for a semiconductor component that can be switched off
US5859772A (en) * 1996-09-25 1999-01-12 Abb Daimler-Benz Transportation (Technology) Gmbh Parallel connection of controllable semiconductor components
DE19639279C2 (en) * 1996-09-25 2002-01-17 Daimlerchrysler Rail Systems Converter circuit
FR2842698A1 (en) * 2002-07-18 2004-01-23 Siemens Vdo Automotive Electronic circuit overvoltage protection having substrate with electrical conductor track each end and central section connected.
DE102005019571A1 (en) * 2005-04-27 2006-11-09 Siemens Ag Inverter arrangement, has bond wire sections with units for generation of damping resistances for reduction of rear oscillation in case of short-circuit of arrangement, where resistances act only in case of short circuit
WO2012016882A1 (en) * 2010-07-26 2012-02-09 Vishay Bccomponents Beyschlag Gmbh Thermal link
US9899171B2 (en) 2010-07-26 2018-02-20 Vishay Bccomponents Beyschlag Gmbh Thermal safety device

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