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DE3856449D1 - Röntgenstrahlenmaskenträger - Google Patents

Röntgenstrahlenmaskenträger

Info

Publication number
DE3856449D1
DE3856449D1 DE3856449T DE3856449T DE3856449D1 DE 3856449 D1 DE3856449 D1 DE 3856449D1 DE 3856449 T DE3856449 T DE 3856449T DE 3856449 T DE3856449 T DE 3856449T DE 3856449 D1 DE3856449 D1 DE 3856449D1
Authority
DE
Germany
Prior art keywords
ray mask
mask wearer
wearer
ray
mask
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE3856449T
Other languages
English (en)
Other versions
DE3856449T2 (de
Inventor
Nobuo Kushibiki
Hideo Kato
Akira Miyake
Yasuaki O Canon K K Fukuda
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Canon Inc
Original Assignee
Canon Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Canon Inc filed Critical Canon Inc
Application granted granted Critical
Publication of DE3856449D1 publication Critical patent/DE3856449D1/de
Publication of DE3856449T2 publication Critical patent/DE3856449T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/22—Masks or mask blanks for imaging by radiation of 100nm or shorter wavelength, e.g. X-ray masks, extreme ultraviolet [EUV] masks; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70691—Handling of masks or workpieces
    • G03F7/707—Chucks, e.g. chucking or un-chucking operations or structural details
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/70858—Environment aspects, e.g. pressure of beam-path gas, temperature
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/70858—Environment aspects, e.g. pressure of beam-path gas, temperature
    • G03F7/70883—Environment aspects, e.g. pressure of beam-path gas, temperature of optical system
    • G03F7/70891—Temperature

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Health & Medical Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Atmospheric Sciences (AREA)
  • Toxicology (AREA)
  • Engineering & Computer Science (AREA)
  • Environmental & Geological Engineering (AREA)
  • Epidemiology (AREA)
  • Public Health (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
DE3856449T 1987-09-30 1988-09-30 Röntgenstrahlenmaskenträger Expired - Fee Related DE3856449T2 (de)

Applications Claiming Priority (6)

Application Number Priority Date Filing Date Title
JP24420287 1987-09-30
JP24420187 1987-09-30
JP24420387 1987-09-30
JP25730487 1987-10-14
JP26804487 1987-10-26
JP1348788 1988-01-26

Publications (2)

Publication Number Publication Date
DE3856449D1 true DE3856449D1 (de) 2001-02-08
DE3856449T2 DE3856449T2 (de) 2001-04-19

Family

ID=27548462

Family Applications (2)

Application Number Title Priority Date Filing Date
DE3855834T Expired - Fee Related DE3855834T2 (de) 1987-09-30 1988-09-30 Herstellungverfahren für eine Röntgenstrahlmaske
DE3856449T Expired - Fee Related DE3856449T2 (de) 1987-09-30 1988-09-30 Röntgenstrahlenmaskenträger

Family Applications Before (1)

Application Number Title Priority Date Filing Date
DE3855834T Expired - Fee Related DE3855834T2 (de) 1987-09-30 1988-09-30 Herstellungverfahren für eine Röntgenstrahlmaske

Country Status (4)

Country Link
US (1) US5101420A (de)
EP (2) EP0310124B1 (de)
DE (2) DE3855834T2 (de)
SG (1) SG43949A1 (de)

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5209996A (en) * 1989-07-26 1993-05-11 Shin-Etsu Chemical Co., Ltd. Membrane consisting of silicon carbide and silicon nitride, method for the preparation thereof and mask for X-ray lithography utilizing the same
JP3133602B2 (ja) * 1994-03-16 2001-02-13 キヤノン株式会社 Ｘ線マスク構造体とその製造方法、及び該ｘ線マスク構造体を用いたｘ線露光方法、及びｘ線露光装置と該ｘ線マスク構造体を用いて作製された半導体デバイス及び半導体デバイスの製造方法
US5670279A (en) * 1994-03-24 1997-09-23 Starfire Electronic Development & Marketing, Ltd. Lithography exposure mask derived from nanocrystal precursors and a method of manufacturing the same
US5538151A (en) * 1995-01-20 1996-07-23 International Business Machines Corp. Recovery of an anodically bonded glass device from a susstrate by use of a metal interlayer
US6066418A (en) * 1996-07-10 2000-05-23 Nec Corporation X-ray mask and fabrication process therefor
DE19756486C1 (de) * 1997-12-18 1999-04-22 Schott Glas Trägertisch für eine Photomaske in einer Vorrichtung zur Mikrochip-Herstellung
US6938783B2 (en) * 2000-07-26 2005-09-06 Amerasia International Technology, Inc. Carrier tape
US7014961B2 (en) * 2002-10-02 2006-03-21 Yazaki Corporation Photomask assembly incorporating a porous frame
WO2008081883A1 (ja) * 2006-12-28 2008-07-10 Dow Corning Toray Co., Ltd. 多孔性ケイ素含有炭素系複合材料並びにそれからなる電極及び電池
CN110764366A (zh) * 2013-11-29 2020-02-07 Ev 集团 E·索尔纳有限责任公司 具有印模结构的印模及其制造方法
US10739671B2 (en) * 2017-11-10 2020-08-11 Taiwan Semiconductor Manufacturing Co., Ltd. Method of manufacturing phase shift photo masks
WO2024208766A1 (en) * 2023-04-04 2024-10-10 Asml Netherlands B.V. Euv-transmissive barrier

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3873824A (en) * 1973-10-01 1975-03-25 Texas Instruments Inc X-ray lithography mask
JPS5320767A (en) 1976-08-10 1978-02-25 Nippon Telegr & Teleph Corp <Ntt> X-ray mask supporting underlayer and its production
JPS5792830A (en) * 1980-12-01 1982-06-09 Hitachi Ltd Manufacture of mask for x-ray exposure
JPS58202530A (ja) * 1982-05-21 1983-11-25 Seiko Epson Corp Ｘ線マスク
JPS5950443A (ja) * 1982-09-16 1984-03-23 Hitachi Ltd Ｘ線マスク
JPS59129851A (ja) * 1983-01-17 1984-07-26 Nec Corp Ｘ線露光用マスクの製造方法
US4608326A (en) * 1984-02-13 1986-08-26 Hewlett-Packard Company Silicon carbide film for X-ray masks and vacuum windows
JPS60168145A (ja) * 1984-02-13 1985-08-31 Nec Corp Ｘ線露光マスク
US4604292A (en) * 1985-04-26 1986-08-05 Spire Corporation X-ray mask blank process
ATA331285A (de) * 1985-11-13 1988-11-15 Ims Ionen Mikrofab Syst Verfahren zur herstellung einer transmissionsmaske
DE3677005D1 (de) * 1986-05-06 1991-02-21 Ibm Deutschland Maske fuer die ionen-, elektronen- oder roentgenstrahllithographie und verfahren zur ihrer herstellung.

Also Published As

Publication number Publication date
EP0697630A1 (de) 1996-02-21
EP0310124A3 (de) 1991-04-03
EP0310124B1 (de) 1997-03-19
DE3856449T2 (de) 2001-04-19
SG43949A1 (en) 1997-11-14
DE3855834D1 (de) 1997-04-24
US5101420A (en) 1992-03-31
EP0310124A2 (de) 1989-04-05
EP0697630B1 (de) 2001-01-03
DE3855834T2 (de) 1997-10-16

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee