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DE3785141D1 - Photo-voltaische anordnung mit heterouebergaengen. - Google Patents

Photo-voltaische anordnung mit heterouebergaengen.

Info

Publication number
DE3785141D1
DE3785141D1 DE8787308346T DE3785141T DE3785141D1 DE 3785141 D1 DE3785141 D1 DE 3785141D1 DE 8787308346 T DE8787308346 T DE 8787308346T DE 3785141 T DE3785141 T DE 3785141T DE 3785141 D1 DE3785141 D1 DE 3785141D1
Authority
DE
Germany
Prior art keywords
heteroe
voltaic
transitions
photo
arrangement
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE8787308346T
Other languages
English (en)
Other versions
DE3785141T2 (de
Inventor
Miroslav Ondris
Marty A Pichler
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Standard Oil Co
Original Assignee
Standard Oil Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Standard Oil Co filed Critical Standard Oil Co
Publication of DE3785141D1 publication Critical patent/DE3785141D1/de
Application granted granted Critical
Publication of DE3785141T2 publication Critical patent/DE3785141T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
    • H01L31/072—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN heterojunction type
    • H01L31/073—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN heterojunction type comprising only AIIBVI compound semiconductors, e.g. CdS/CdTe solar cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/1828—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof the active layers comprising only AIIBVI compounds, e.g. CdS, ZnS, CdTe
    • H01L31/1832—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof the active layers comprising only AIIBVI compounds, e.g. CdS, ZnS, CdTe comprising ternary compounds, e.g. Hg Cd Te
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/543—Solar cells from Group II-VI materials

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Sustainable Development (AREA)
  • Sustainable Energy (AREA)
  • Photovoltaic Devices (AREA)
DE8787308346T 1986-10-31 1987-09-21 Photo-voltaische anordnung mit heterouebergaengen. Expired - Fee Related DE3785141T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US06/926,283 US4753684A (en) 1986-10-31 1986-10-31 Photovoltaic heterojunction structures

Publications (2)

Publication Number Publication Date
DE3785141D1 true DE3785141D1 (de) 1993-05-06
DE3785141T2 DE3785141T2 (de) 1993-07-29

Family

ID=25452993

Family Applications (1)

Application Number Title Priority Date Filing Date
DE8787308346T Expired - Fee Related DE3785141T2 (de) 1986-10-31 1987-09-21 Photo-voltaische anordnung mit heterouebergaengen.

Country Status (7)

Country Link
US (1) US4753684A (de)
EP (1) EP0266050B1 (de)
JP (1) JPH0831613B2 (de)
AU (1) AU604774B2 (de)
CA (1) CA1275316C (de)
DE (1) DE3785141T2 (de)
ES (1) ES2039449T3 (de)

Families Citing this family (30)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5113076A (en) * 1989-12-19 1992-05-12 Santa Barbara Research Center Two terminal multi-band infrared radiation detector
US5045897A (en) * 1990-03-14 1991-09-03 Santa Barbara Research Center Quaternary II-VI materials for photonics
US5061973A (en) * 1990-04-27 1991-10-29 The United States Of America As Represented By The Secretary Of The Navy Semiconductor heterojunction device with graded bandgap
US5149956A (en) * 1991-06-12 1992-09-22 Santa Barbara Research Center Two-color radiation detector array and methods of fabricating same
US5286306A (en) * 1992-02-07 1994-02-15 Shalini Menezes Thin film photovoltaic cells from I-III-VI-VII compounds
US5380669A (en) * 1993-02-08 1995-01-10 Santa Barbara Research Center Method of fabricating a two-color detector using LPE crystal growth
US5457331A (en) * 1993-04-08 1995-10-10 Santa Barbara Research Center Dual-band infrared radiation detector optimized for fabrication in compositionally graded HgCdTe
US6043548A (en) * 1993-04-14 2000-03-28 Yeda Research And Development Co., Ltd. Semiconductor device with stabilized junction
US5393675A (en) * 1993-05-10 1995-02-28 The University Of Toledo Process for RF sputtering of cadmium telluride photovoltaic cell
US5567975A (en) * 1994-06-30 1996-10-22 Santa Barbara Research Center Group II-VI radiation detector for simultaneous visible and IR detection
US5559336A (en) * 1994-07-05 1996-09-24 Santa Barbara Research Center Integrated LPE-grown structure for simultaneous detection of infrared radiation in two bands
US5581084A (en) * 1995-06-07 1996-12-03 Santa Barbara Research Center Simultaneous two color IR detector having common middle layer metallic contact
US5731621A (en) * 1996-03-19 1998-03-24 Santa Barbara Research Center Three band and four band multispectral structures having two simultaneous signal outputs
US5959339A (en) * 1996-03-19 1999-09-28 Raytheon Company Simultaneous two-wavelength p-n-p-n Infrared detector
US5998235A (en) * 1997-06-26 1999-12-07 Lockheed Martin Corporation Method of fabrication for mercury-based quaternary alloys of infrared sensitive materials
GB2397946B (en) * 2002-01-29 2004-12-22 Univ Sheffield Hallam Thin film photovoltaic devices and methods of making the same
US20040163701A1 (en) * 2003-02-21 2004-08-26 Hideo Katayama Solar battery
US7865944B1 (en) * 2004-09-10 2011-01-04 Juniper Networks, Inc. Intercepting GPRS data
US20090250101A1 (en) * 2008-04-04 2009-10-08 Yi-An Chang Photovoltaic structure
US20110155208A1 (en) * 2008-06-25 2011-06-30 Michael Wang Semiconductor heterojunction photovoltaic solar cell with a charge blocking layer
CA2744774C (en) 2008-07-17 2017-05-23 Uriel Solar, Inc. High power efficiency, large substrate, polycrystalline cdte thin film semiconductor photovoltaic cell structures grown by molecular beam epitaxy at high deposition rate for use in solar electricity generation
US8912428B2 (en) * 2008-10-22 2014-12-16 Epir Technologies, Inc. High efficiency multijunction II-VI photovoltaic solar cells
US8084682B2 (en) * 2009-01-21 2011-12-27 Yung-Tin Chen Multiple band gapped cadmium telluride photovoltaic devices and process for making the same
EP2452370A4 (de) * 2009-07-10 2013-01-02 First Solar Inc Pv-module mit zink
JP5813654B2 (ja) * 2009-12-10 2015-11-17 ウリエル ソーラー インコーポレイテッド 太陽光発電における使用のための高電力効率多結晶ＣｄＴｅ薄膜半導体光起電力電池構造
US20110139247A1 (en) * 2009-12-16 2011-06-16 Primestar Solar, Inc. Graded alloy telluride layer in cadmium telluride thin film photovoltaic devices and methods of manufacturing the same
US9837563B2 (en) 2009-12-17 2017-12-05 Epir Technologies, Inc. MBE growth technique for group II-VI inverted multijunction solar cells
JP2014519718A (ja) * 2011-06-16 2014-08-14 スリーエム イノベイティブ プロパティズ カンパニー ソーラー光起電システムのためのブースター被膜
WO2013158177A2 (en) 2012-01-27 2013-10-24 PLANT PV, Inc. Multi-crystalline ii-vi based multijunction solar cells
CN111863625B (zh) * 2020-07-28 2023-04-07 哈尔滨工业大学 一种单一材料pn异质结及其设计方法

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4400244A (en) * 1976-06-08 1983-08-23 Monosolar, Inc. Photo-voltaic power generating means and methods
US4425194A (en) * 1976-06-08 1984-01-10 Monosolar, Inc. Photo-voltaic power generating means and methods
JPS5354995A (en) * 1976-10-29 1978-05-18 Agency Of Ind Science & Technol Photovoltaic element
US4388483A (en) * 1981-09-08 1983-06-14 Monosolar, Inc. Thin film heterojunction photovoltaic cells and methods of making the same
US4548681A (en) * 1984-02-03 1985-10-22 The Standard Oil Company (Ohio) Electrodeposition of thin film heterojunction photovoltaic devices that utilize Cd rich Hg1-x Cdx Te
US4596645A (en) * 1984-10-23 1986-06-24 California Institute Of Technology Reactively-sputtered zinc semiconductor films of high conductivity for heterojunction devices
US4642140A (en) * 1985-04-30 1987-02-10 The United States Of America As Represented By The United States Department Of Energy Process for producing chalcogenide semiconductors
EP0248881A1 (de) * 1985-12-05 1987-12-16 Santa Barbara Research Center Struktur und herstellungsverfahren eines "trapping-mode"-photodetektors
US4710589A (en) * 1986-10-21 1987-12-01 Ametek, Inc. Heterojunction p-i-n photovoltaic cell

Also Published As

Publication number Publication date
EP0266050A2 (de) 1988-05-04
US4753684A (en) 1988-06-28
EP0266050B1 (de) 1993-03-31
AU8053687A (en) 1988-05-05
EP0266050A3 (en) 1989-04-26
ES2039449T3 (es) 1993-10-01
DE3785141T2 (de) 1993-07-29
AU604774B2 (en) 1991-01-03
CA1275316C (en) 1990-10-16
JPS63245963A (ja) 1988-10-13
JPH0831613B2 (ja) 1996-03-27

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee