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DE3588185D1 - Verfahren zur Herstellung von gemusterten Photoschutzlackschichten - Google Patents

Verfahren zur Herstellung von gemusterten Photoschutzlackschichten

Info

Publication number
DE3588185D1
DE3588185D1 DE3588185T DE3588185T DE3588185D1 DE 3588185 D1 DE3588185 D1 DE 3588185D1 DE 3588185 T DE3588185 T DE 3588185T DE 3588185 T DE3588185 T DE 3588185T DE 3588185 D1 DE3588185 D1 DE 3588185D1
Authority
DE
Germany
Prior art keywords
production
protective lacquer
lacquer layers
patterned photo
photo protective
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE3588185T
Other languages
English (en)
Other versions
DE3588185T2 (de
Inventor
George Maheras
Hubert O Hayworth
Michael R Gulett
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
SK Hynix Inc
NCR International Inc
Original Assignee
Symbios Inc
NCR International Inc
Hyundai Electronics America Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Symbios Inc, NCR International Inc, Hyundai Electronics America Inc filed Critical Symbios Inc
Publication of DE3588185D1 publication Critical patent/DE3588185D1/de
Application granted granted Critical
Publication of DE3588185T2 publication Critical patent/DE3588185T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G03F7/2022—Multi-step exposure, e.g. hybrid; backside exposure; blanket exposure, e.g. for image reversal; edge exposure, e.g. for edge bead removal; corrective exposure
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/0035—Multiple processes, e.g. applying a further resist layer on an already in a previously step, processed pattern or textured surface
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
    • G03F7/095—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers having more than one photosensitive layer
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/38—Treatment before imagewise removal, e.g. prebaking

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Architecture (AREA)
  • Structural Engineering (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
DE19853588185 1984-08-13 1985-08-07 Verfahren zur Herstellung von gemusterten Photoschutzlackschichten Expired - Lifetime DE3588185T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US63987584A 1984-08-13 1984-08-13

Publications (2)

Publication Number Publication Date
DE3588185D1 true DE3588185D1 (de) 1998-06-10
DE3588185T2 DE3588185T2 (de) 1998-12-17

Family

ID=24565935

Family Applications (2)

Application Number Title Priority Date Filing Date
DE19853588185 Expired - Lifetime DE3588185T2 (de) 1984-08-13 1985-08-07 Verfahren zur Herstellung von gemusterten Photoschutzlackschichten
DE8585903964T Expired - Lifetime DE3582491D1 (de) 1984-08-13 1985-08-07 Verfahren zur herstellung von dessinierten photoschutzlackschichten.

Family Applications After (1)

Application Number Title Priority Date Filing Date
DE8585903964T Expired - Lifetime DE3582491D1 (de) 1984-08-13 1985-08-07 Verfahren zur herstellung von dessinierten photoschutzlackschichten.

Country Status (4)

Country Link
EP (2) EP0193543B1 (de)
JP (1) JPH0769616B2 (de)
DE (2) DE3588185T2 (de)
WO (1) WO1986001313A1 (de)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
BE900156A (fr) * 1984-07-13 1985-01-14 Itt Ind Belgium Procede pour superposer deux couches de vernis photosensibles positifs.
JP2653072B2 (ja) * 1987-12-07 1997-09-10 松下電器産業株式会社 パターン形成方法
DE3850151T2 (de) * 1987-03-09 1995-01-12 Matsushita Electric Ind Co Ltd Verfahren zur Herstellung von Mustern.
JPH0474488A (ja) * 1990-07-16 1992-03-09 Mitsubishi Electric Corp 半導体レーザ装置およびその製造方法
GR1005410B (el) * 2006-01-20 2007-01-31 Εκεφε "Δημοκριτος" Μεθοδος εναποθεσης πλειαδας πολυμερικων υλικων σεχημικα ευαισθητες συστοιχιες

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1146297A (en) * 1965-09-02 1969-03-26 Texas Instruments Inc Photomask and method for making same
JPS51114931A (en) * 1975-04-02 1976-10-09 Hitachi Ltd Photoresist pattern formation method
US4394437A (en) * 1981-09-24 1983-07-19 International Business Machines Corporation Process for increasing resolution of photolithographic images
NL8203521A (nl) * 1982-09-10 1984-04-02 Philips Nv Werkwijze voor het vervaardigen van een inrichting.

Also Published As

Publication number Publication date
JPS61502987A (ja) 1986-12-18
EP0359342B1 (de) 1998-05-06
EP0193543A1 (de) 1986-09-10
EP0359342A3 (de) 1990-11-22
DE3582491D1 (de) 1991-05-16
JPH0769616B2 (ja) 1995-07-31
EP0193543B1 (de) 1991-04-10
DE3588185T2 (de) 1998-12-17
EP0359342A2 (de) 1990-03-21
WO1986001313A1 (en) 1986-02-27

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8328 Change in the person/name/address of the agent

Free format text: V. BEZOLD & SOZIEN, 80799 MUENCHEN

8327 Change in the person/name/address of the patent owner

Owner name: HYNIX SEMICONDUCTOR INC., ICHON, KYONGGI, KR

Owner name: NCR INTERNATIONAL, INC., DAYTON, OHIO, US