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DE3380932D1 - Verfahren und vorrichtung zum regeln der form eines einkristalls. - Google Patents

Verfahren und vorrichtung zum regeln der form eines einkristalls.

Info

Publication number
DE3380932D1
DE3380932D1 DE8383306467T DE3380932T DE3380932D1 DE 3380932 D1 DE3380932 D1 DE 3380932D1 DE 8383306467 T DE8383306467 T DE 8383306467T DE 3380932 T DE3380932 T DE 3380932T DE 3380932 D1 DE3380932 D1 DE 3380932D1
Authority
DE
Germany
Prior art keywords
regulating
shape
single crystal
crystal
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE8383306467T
Other languages
English (en)
Inventor
Syoichi Washizuka
Sadao Matsumura
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp filed Critical Toshiba Corp
Application granted granted Critical
Publication of DE3380932D1 publication Critical patent/DE3380932D1/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/20—Controlling or regulating
    • C30B15/22—Stabilisation or shape controlling of the molten zone near the pulled crystal; Controlling the section of the crystal
    • C30B15/28—Stabilisation or shape controlling of the molten zone near the pulled crystal; Controlling the section of the crystal using weight changes of the crystal or the melt, e.g. flotation methods
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10T117/10—Apparatus
    • Y10T117/1004—Apparatus with means for measuring, testing, or sensing
    • Y10T117/1008—Apparatus with means for measuring, testing, or sensing with responsive control means

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
DE8383306467T 1982-11-30 1983-10-25 Verfahren und vorrichtung zum regeln der form eines einkristalls. Expired - Lifetime DE3380932D1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP57208481A JPS59102896A (ja) 1982-11-30 1982-11-30 単結晶の形状制御方法

Publications (1)

Publication Number Publication Date
DE3380932D1 true DE3380932D1 (de) 1990-01-11

Family

ID=16556875

Family Applications (1)

Application Number Title Priority Date Filing Date
DE8383306467T Expired - Lifetime DE3380932D1 (de) 1982-11-30 1983-10-25 Verfahren und vorrichtung zum regeln der form eines einkristalls.

Country Status (4)

Country Link
US (1) US4591994A (de)
EP (1) EP0115121B1 (de)
JP (1) JPS59102896A (de)
DE (1) DE3380932D1 (de)

Families Citing this family (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59184798A (ja) * 1983-04-04 1984-10-20 Agency Of Ind Science & Technol ガリウム砒素単結晶の製造方法
IT1207055B (it) * 1985-05-28 1989-05-17 Montedison Spa Microprocessore per programmatori di rampe di tensioni per ottenere incrementi minimi di tensione programmabile dell'ordine del millivolt.
JPH078754B2 (ja) * 1986-12-23 1995-02-01 株式会社東芝 単結晶の製造方法
JPS63242991A (ja) * 1987-03-31 1988-10-07 Shin Etsu Handotai Co Ltd 結晶径制御方法
US5196086A (en) * 1987-04-09 1993-03-23 Mitsubishi Materials Corporation Monocrystal rod pulled from a melt
USRE34375E (en) * 1987-05-05 1993-09-14 Mobil Solar Energy Corporation System for controlling apparatus for growing tubular crystalline bodies
GB8715327D0 (en) 1987-06-30 1987-08-05 Secr Defence Growth of semiconductor singel crystals
FR2621053A1 (fr) * 1987-09-29 1989-03-31 Commissariat Energie Atomique Procede de commande d'une machine de tirage de monocristaux
US4971652A (en) * 1989-12-18 1990-11-20 General Electric Company Method and apparatus for crystal growth control
JPH06102590B2 (ja) * 1990-02-28 1994-12-14 信越半導体株式会社 Ｃｚ法による単結晶ネック部育成自動制御方法
US5246535A (en) * 1990-04-27 1993-09-21 Nkk Corporation Method and apparatus for controlling the diameter of a silicon single crystal
FI911857A (fi) * 1990-04-27 1991-10-28 Nippon Kokan Kk Foerfarande och apparat foer kontroll av diametern hos en enskild silikonkristall.
JPH0785489B2 (ja) * 1991-02-08 1995-09-13 信越半導体株式会社 単結晶の直径計測方法
US5394830A (en) * 1993-08-27 1995-03-07 General Electric Company Apparatus and method for growing long single crystals in a liquid encapsulated Czochralski process
US6051064A (en) * 1998-08-20 2000-04-18 Seh America, Inc. Apparatus for weighing crystals during Czochralski crystal growing
US6792996B1 (en) * 2003-04-14 2004-09-21 Teh Yor Industrial Co., Ltd. Venetian blind
US8721786B2 (en) * 2010-09-08 2014-05-13 Siemens Medical Solutions Usa, Inc. Czochralski crystal growth process furnace that maintains constant melt line orientation and method of operation
DE102017215332A1 (de) * 2017-09-01 2019-03-07 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Einkristall aus Silizium mit <100>-Orientierung, der mit Dotierstoff vom n-Typ dotiert ist, und Verfahren zur Herstellung eines solchen Einkristalls

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1434527A (en) * 1972-09-08 1976-05-05 Secr Defence Growth of crystalline material
GB1478192A (en) * 1974-03-29 1977-06-29 Nat Res Dev Automatically controlled crystal growth
GB1465191A (en) * 1974-03-29 1977-02-23 Nat Res Dev Automatically controlled crystal growth
DE2446293C2 (de) * 1974-04-03 1986-01-30 National Research Development Corp., London Vorrichtung zur Regelung des Stabquerschnitts beim Czochralski-Ziehen
CH580805A5 (de) * 1975-04-14 1976-10-15 Prolizenz Ag
US4239583A (en) * 1979-06-07 1980-12-16 Mobil Tyco Solar Energy Corporation Method and apparatus for crystal growth control
US4234376A (en) * 1979-10-01 1980-11-18 Allied Chemical Corporation Growth of single crystal beryllium oxide
JPS577116A (en) * 1980-06-16 1982-01-14 Matsushita Electric Ind Co Ltd Manufacture of amorphous silicon thin film
JPS57123892A (en) * 1981-01-17 1982-08-02 Toshiba Corp Preparation and apparatus of single crystal

Also Published As

Publication number Publication date
JPH0416437B2 (de) 1992-03-24
EP0115121B1 (de) 1989-12-06
JPS59102896A (ja) 1984-06-14
EP0115121A3 (en) 1987-01-21
EP0115121A2 (de) 1984-08-08
US4591994A (en) 1986-05-27

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee