DE3233022A1 - Method for the direct bonding of a body to a ceramic substrate - Google Patents
Method for the direct bonding of a body to a ceramic substrateInfo
- Publication number
- DE3233022A1 DE3233022A1 DE19823233022 DE3233022A DE3233022A1 DE 3233022 A1 DE3233022 A1 DE 3233022A1 DE 19823233022 DE19823233022 DE 19823233022 DE 3233022 A DE3233022 A DE 3233022A DE 3233022 A1 DE3233022 A1 DE 3233022A1
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- substrate
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- eutectic
- silicon layer
- silicon
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- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B37/00—Joining burned ceramic articles with other burned ceramic articles or other articles by heating
- C04B37/02—Joining burned ceramic articles with other burned ceramic articles or other articles by heating with metallic articles
- C04B37/023—Joining burned ceramic articles with other burned ceramic articles or other articles by heating with metallic articles characterised by the interlayer used
- C04B37/026—Joining burned ceramic articles with other burned ceramic articles or other articles by heating with metallic articles characterised by the interlayer used consisting of metals or metal salts
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K35/00—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting
- B23K35/22—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting characterised by the composition or nature of the material
- B23K35/24—Selection of soldering or welding materials proper
- B23K35/28—Selection of soldering or welding materials proper with the principal constituent melting at less than 950 degrees C
- B23K35/286—Al as the principal constituent
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- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B37/00—Joining burned ceramic articles with other burned ceramic articles or other articles by heating
- C04B37/003—Joining burned ceramic articles with other burned ceramic articles or other articles by heating by means of an interlayer consisting of a combination of materials selected from glass, or ceramic material with metals, metal oxides or metal salts
- C04B37/006—Joining burned ceramic articles with other burned ceramic articles or other articles by heating by means of an interlayer consisting of a combination of materials selected from glass, or ceramic material with metals, metal oxides or metal salts consisting of metals or metal salts
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- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
- C04B2235/65—Aspects relating to heat treatments of ceramic bodies such as green ceramics or pre-sintered ceramics, e.g. burning, sintering or melting processes
- C04B2235/658—Atmosphere during thermal treatment
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- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B2237/00—Aspects relating to ceramic laminates or to joining of ceramic articles with other articles by heating
- C04B2237/02—Aspects relating to interlayers, e.g. used to join ceramic articles with other articles by heating
- C04B2237/12—Metallic interlayers
- C04B2237/121—Metallic interlayers based on aluminium
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- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B2237/00—Aspects relating to ceramic laminates or to joining of ceramic articles with other articles by heating
- C04B2237/02—Aspects relating to interlayers, e.g. used to join ceramic articles with other articles by heating
- C04B2237/16—Silicon interlayers
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- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B2237/00—Aspects relating to ceramic laminates or to joining of ceramic articles with other articles by heating
- C04B2237/30—Composition of layers of ceramic laminates or of ceramic or metallic articles to be joined by heating, e.g. Si substrates
- C04B2237/32—Ceramic
- C04B2237/34—Oxidic
- C04B2237/343—Alumina or aluminates
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- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B2237/00—Aspects relating to ceramic laminates or to joining of ceramic articles with other articles by heating
- C04B2237/30—Composition of layers of ceramic laminates or of ceramic or metallic articles to be joined by heating, e.g. Si substrates
- C04B2237/40—Metallic
- C04B2237/402—Aluminium
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- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B2237/00—Aspects relating to ceramic laminates or to joining of ceramic articles with other articles by heating
- C04B2237/50—Processing aspects relating to ceramic laminates or to the joining of ceramic articles with other articles by heating
- C04B2237/70—Forming laminates or joined articles comprising layers of a specific, unusual thickness
- C04B2237/708—Forming laminates or joined articles comprising layers of a specific, unusual thickness of one or more of the interlayers
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- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B2237/00—Aspects relating to ceramic laminates or to joining of ceramic articles with other articles by heating
- C04B2237/50—Processing aspects relating to ceramic laminates or to the joining of ceramic articles with other articles by heating
- C04B2237/72—Forming laminates or joined articles comprising at least two interlayers directly next to each other
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- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B2237/00—Aspects relating to ceramic laminates or to joining of ceramic articles with other articles by heating
- C04B2237/50—Processing aspects relating to ceramic laminates or to the joining of ceramic articles with other articles by heating
- C04B2237/86—Joining of two substrates at their largest surfaces, one surface being complete joined and covered, the other surface not, e.g. a small plate joined at it's largest surface on top of a larger plate
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- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Ceramic Engineering (AREA)
- Materials Engineering (AREA)
- Structural Engineering (AREA)
- Organic Chemistry (AREA)
- Mechanical Engineering (AREA)
- Pressure Welding/Diffusion-Bonding (AREA)
- Ceramic Products (AREA)
Abstract
Description
Verfahren zum direkten Verbinden eines Method of directly connecting a
Körpers mit einem keramischen Substrat Die Erfindung betrifft ein Verfahren zum direkten Verbinden eines Substrats aus einer Oxidkeramik und eines Körpers, bei dem zwischen Verbindungsflächen des Substrats und des Körpers durch Erwärmen eine flüssige Zwischenschicht aus einer eutektischen Al-Si-Legierung erzeugt und durch anschliessendes Abkühlen verfestigt wird. Body with a ceramic substrate The invention relates to a Method for directly connecting a substrate made of an oxide ceramic and a Body in which between connecting surfaces of the substrate and the body through Heating creates a liquid intermediate layer made of a eutectic Al-Si alloy and is solidified by subsequent cooling.
Ein solches Verfahren ist bekannt aus der Patentschrift US-PS 3 766 634. Es bezieht sich auf die direkte Verbindung zwischen einem nichtmetallischen, keramischen Substrat und einem Körper aus Metall, beispielsweise aus Aluminium.Such a process is known from US Pat. No. 3,766 634. It refers to the direct connection between a non-metallic, ceramic substrate and a body made of metal, for example aluminum.
Beide Verbindungspartner werden mit den Verbindungsflächen in Kontakt gebracht und bei erhöhten Temperaturen einer reaktiven Gasatmosphäre ausgesetzt, die, im Falle des Al-Si-Eutektikums, eine Si-Verbindung, wie z.B. Sir4, enthält, die in der Nähe der zu verbindenden Flächen durch geeignete Massnahmen zersetzt wird. Temperatur und Gaszusammensetzung sind so gewählt, dass das Si mit dem Al der Körperoberfläche eine Verbindung eingeht und diese Verbindung zusammen mit dem angrenzenden, reinen Metall des Körpers ein niedrig schmelzendes Eutektikum bildet, das bei der eingestellten Temperatur flüssig ist und das keramische Substrat besetzt. Beim Abkühlen ergibt sich dann unter geeigneten oraussetzungen eine feste, direkte te Verbindung zwischen Keramiksubstrat und Aluminiumkörper Die Qualität der direkten Verbindung hängt bei diesem Verfahren von der Gleichmässigkeit ab, mit der die Oberflächenschicht des metallischen Körpers und das Gas der reaktiven Atmosphäre miteinander reagieren. Da jedoch gerade die kritischen Verbindungsflächen von Substrat und Körper in Kontakt miteinander sind, d.h., sich gegenseitig abdecken, wird die Reaktion zwischen Gas und metallischer Verbindungsfläche durch die anliegende Verbindungsfläche des Keramiksubstrats zumindest partiell behindert.Both connection partners come into contact with the connection surfaces brought and exposed to a reactive gas atmosphere at elevated temperatures, which, in the case of the Al-Si eutectic, contains a Si compound such as Sir4, which decomposes by means of suitable measures in the vicinity of the surfaces to be connected will. The temperature and gas composition are chosen so that the Si with the Al the body surface enters into a connection and this connection together with the adjacent, pure metal of the body forms a low-melting eutectic, which is liquid at the set temperature and occupies the ceramic substrate. On cooling, under suitable conditions, a solid, direct result then results te connection between ceramic substrate and aluminum body The quality the direct connection in this process depends on the evenness, with which the surface layer of the metallic body and the gas the reactive Atmosphere react with each other. However, there are precisely the critical connecting surfaces the substrate and the body are in contact with each other, i.e. cover each other, the reaction between gas and metallic connecting surface is caused by the contact Connection surface of the ceramic substrate at least partially hindered.
Weiterhin findet die Reaktion zwischen Gas und Metall nicht nur in gewünschter Weise auf der Verbindungsfläche des Metallkörpers, sondern auch auf allen anderen, ungeschützten metallischen Oberflächen statt. Ist daher für das Endproe dukt des Verbindungsverfahrens eine gut leitende, metallische Oberfläche des aufgebrachten Metallkörpers wichtig, müssen entweder aufwendige Schutzmassnahmen ergriffen werden, um die Reaktion der betreffenden Flächen mit dem Gas zu verhindern, oder die reagierten Schichten durch bekannte chemische oder physikalische Verfahren nachträglich abgetragen werden.Furthermore, the reaction between gas and metal does not only take place in desired way on the connection surface of the metal body, but also on all other, unprotected metallic surfaces. Is therefore for the end test duct of the connection process a highly conductive, metallic surface of the applied Metal body is important, extensive protective measures must either be taken, to prevent the surfaces in question from reacting with the gas, or which reacted Layers subsequently removed using known chemical or physical processes will.
Darüber hinaus ist es bei dem bekannten Verfahren nicht möglich, die direkte Verbindung zwischen Keramiksubstrat und Metallkörper selektiv auszuführen, d.h., nur in ausgewählten Bereichen der gesamten Verbindungsfläche, weil der Reaktionsprozess in der Gasatmosphäre durch die üblichen Maskierungsverfahren nicht begrenzt werden kann.In addition, it is not possible with the known method that selectively execute direct connection between ceramic substrate and metal body, i.e., only in selected areas of the entire connection surface because of the reaction process are not limited in the gas atmosphere by the usual masking methods can.
Der vorliegenden Erfindung liegt daher die Aufgabe zugrunde, ein Verbindungsverfahren zu schaffen, das eine gleichmässige und selektive Verbindung ermöglicht und nur auf die Verbindungsfläche selbst einwirkt.The present invention is therefore based on the object of a connection method to create that enables an even and selective connection and only acts on the connection surface itself.
Die Aufgabe wird dadurch gelöst, dass vor dem Erwärmen auf die Verbindungsfläche des Substrats eine Siliziumschicht aufgebracht und während des Erwärmens die Siliumschicht mit einer angrenzenden Aluminiumschicht zu einer eutektischen Al-Si-Legierung verschmolzen wird.The object is achieved in that prior to heating on the connection surface of the substrate a silicon layer applied and during heating the silicon layer with an adjacent aluminum layer to a eutectic one Al-Si alloy is fused.
Bei einemobevorzugten Ausführungsbeispiel des erfindungsgemässen Verfahrens wird, ausgehend von einem Körper-aus Aluminium, die Verbindungsfläche des Körpers selbst als angrenzende Aluminiumschicht benutzt und mit der Siliziumschicht zu einer eutektischen Al-Si-Legierung verschmolzen.In a preferred embodiment of the method according to the invention The connecting surface of the body is based on a body made of aluminum used as an adjacent aluminum layer and to one with the silicon layer fused eutectic Al-Si alloy.
Bei einem weiteren, bevorzugten Ausführungsbeispiel wird, ausgehend von einem Körper aus Keramik, vor dem Erwärmen auf die Verbindungsfläche des Körpers ebenfalls eine Siliziumschicht aufgebracht und zwischen die Siliziumschichten eine Aluminiumfolie gelegt und mit beiden Siliziumschichten zu einer eutektischen Al-Si-Legierung verschmolzen Die Einzelheiten des erfindungsgemässen. Verfahrens werden nachfolgend anhand der Zeichnung beschrieben und erläutert.In a further, preferred exemplary embodiment, starting from a body made of ceramic, before heating on the joint surface of the body also applied a silicon layer and between the silicon layers a Aluminum foil is laid and both silicon layers form a eutectic Al-Si alloy fused The details of the inventive. Procedure are below described and explained with reference to the drawing.
Es zeigen: Fig. la-d die Verfahrensschritte bei einem ersten Ausführungsbeispiel des erfindungsgemässen Verfahrens; Fig. 2a-d entsprechende Verfahrensschritte bei einem zweiten Ausführungsbeispiel.The figures show: FIGS. 1a-d the method steps in a first exemplary embodiment of the method according to the invention; 2a-d, corresponding process steps a second embodiment.
In Fig. la-d sind die wesentlichen Verfahrensschritte bei einem bevorzugten Ausführungsbeispiel des erfindungsgemässen Verfahrens dargestellt. Das Beispiel geht aus von einem Keramiksubstrat 1 mit einer im wesentlichen ebenen Verbindungsfläche 3 und einem metallischen Körper 2 aus Alu minium mit einer gleichfalls ebenen Verbindungsfläche 4 (Fig. la).In Fig. La-d, the essential process steps are in a preferred one Exemplary embodiment of the method according to the invention shown. The example is based on a ceramic substrate 1 with an essentially flat connecting surface 3 and a metallic body 2 made of aluminum with an equally flat connecting surface 4 (Fig. La).
Die beiden Verbindungsflächen 3, 4 werden zunächst vorteilhafterweise vor der Weiterbehandlung nach einem oder mehren ren aus der Aufdampftechnik bekannten Verfahren gereinigt.The two connecting surfaces 3, 4 are initially advantageous before further treatment after one or more ren known from vapor deposition technology Process cleaned.
Wie in Fig. lb gezeigt, wird anschliessend auf die Verbindungsfläche 3 des Keramiksubstrats 1 eine Siliziumschicht 5 aufgebracht. Die Siliziumschicht 5 kann entweder die Verbindungsfläche 3 in ihrer Gesamtheit bedecken, oder aber mit Hilfe allgemein bekannter Maskierungstechniken selektiv auf ausgewählte Bereiche der Verbindungsfläche 3 aufgebracht werden. Dazu eignen sich beispielsweise thermische Aufdampf- oder Kathodenzerstäubungsverfahren in Kombinativ mit photochemischen Maskenprozessen.As shown in Fig. Lb, is then on the connection surface 3 of the ceramic substrate 1, a silicon layer 5 is applied. The silicon layer 5 can either cover the connecting surface 3 in its entirety, or else selectively on selected areas using well-known masking techniques the connection surface 3 are applied. Thermal ones, for example, are suitable for this purpose Evaporation or cathode sputtering processes combined with photochemical mask processes.
Nachdem die Siliziumschicht 5 in den gewünschten Abmessungen auf dem Keramiksubstrat abgeschieden worden ist, wird der Aluminium-Körper 2 mit seiner Verbindungsfläche 4 auf die Silizumschicht 5 gelegt (Fig. lc). Der Körper 2 und das Substrat 1 werden mit erhöhtem Druck gegeneinandergepresst und unter diesem Anpressdruck in der in Fig. lc dargestellten Konfiguration erwärmt. Sobald bei der Erwärmung die für das Al#Si-Legierungssystem.charakteristische Temperatur von etwa 5770 # erreicht und überschritten wird, legiert die Siliziumschicht 5 mit dem Al aus der Randschicht des Körpers 2 unter Bildung einer eutektischen flüssigen Phase, die sich gegenüber den reinen Ausgangsmaterialien Al und Si durch einen sehr niedrigen Schmelzpunkt auszeichnet. Die Oxydhaut, die üblicherweise die Oberfläche des Aluminiumkörpers 2 bedeckt, wird bei diesem Vorgang der Legierungsbildung sehr leicht durchbrochen.After the silicon layer 5 in the desired dimensions on the Ceramic substrate has been deposited, the aluminum body 2 with his Connection surface 4 placed on the silicon layer 5 (Fig. Lc). The body 2 and the substrate 1 are pressed against one another with increased pressure and under this Contact pressure heated in the configuration shown in Fig. Lc. As soon as the Heating is the characteristic temperature of the Al # Si alloy system 5770 # is reached and exceeded, the silicon layer 5 is alloyed with the Al from the edge layer of the body 2 with the formation of a eutectic liquid phase, which is very low compared to the pure starting materials Al and Si Melting point. The oxide skin, which is usually the surface of the aluminum body 2 is covered very easily during this process of alloy formation.
Die flüssige Zwischenschicht 8 benetzt dann, wie in Fig. ld dargestellt, die Verbindungsfläche 3 des Keramiksubstrats und bildet schliesslich beim Abkühlen die Bindung mit dem Substrat aus.The liquid intermediate layer 8 then wets, as shown in FIG. the connecting surface 3 of the ceramic substrate and finally forms on cooling the bond with the substrate.
Für eine Verbindung zwischen einem Al-Körper und einem Substrat aus Al203-Keramik ergeben sich gute Festigkeiten, wenn die Siliziumschicht 5 mit etwa 1 pm Dicke in Vakuum auf das Substrat aufgedampft wird. Als Anpressdruck ist ein Druck von etwa 3 bar ausreichend, um gute Verbindungen.For a connection between an Al body and a substrate Al203 ceramic results in good strengths, when the silicon layer 5 with a thickness of about 1 μm is vapor-deposited onto the substrate in a vacuum. As contact pressure a pressure of around 3 bar is sufficient to create good connections.
zu erhalten. Damit für den thermisch aktivierten Legierungsvorgang genügend Zeit zur Verfügung steht, ist es bei dem erfindungsgemässen Verfahren vorteilhaft, Substrat 1 und Körper 2 unter Anpressdruck für mehr als 3 min. auf einer Erwärmungstemperatur oberhalb 577 0C zu halten.to obtain. So for the thermally activated alloying process there is enough time available, it is advantageous in the method according to the invention, Substrate 1 and body 2 under contact pressure for more than 3 minutes at a heating temperature above 577 0C.
Da, im Unterschied zum bekannten Verfahren mit reaktiver Atmosphäre, bei dem erfindungsgemässen Verfahren der nichtmetallische Legierungspartner als gleichmässig aufgebrachte Fläche der metallischen Verbindungsfläche des Körpers gegenüberliegt, ergibt sich eine lückenlose und sehr gleichmässige Zwischenschicht mit entsprechender Haftfestigkeit.Since, in contrast to the known process with a reactive atmosphere, in the process according to the invention, the non-metallic alloy partner as evenly applied area of the metallic connecting surface of the body opposite, the result is a gapless and very even intermediate layer with corresponding adhesive strength.
Wie schon erwähnt, lässt sich das Aufbringen der Siliziumschicht zudem selektiv durchführen und die übrigen Oberflächen des metallischen Körpers bleiben bei dem Verbindungsvorgang unverändert.As already mentioned, the silicon layer can also be applied perform selectively and the remaining surfaces of the metallic body remain unchanged during the connection process.
Bei einem weiteren Ausführungsbeispiel des erfindÜngsgemäs# sen Verfahrens, bei dem nicht nur das Substrat 1, sondern auch der Körper 2 aus einer Keramik, insbesondere aus Al203~ Keramik, bestehen Fig. 2a, werden gemäss Fig. 2b sowohl auf die Verbindungsfläche 3 des Substrats 1, als auch auf die Verbindungsfläche 4 des Keramik-Körpers 2 dünne Siliziumschichten 5 und 6 mit vorzugsweise gleicher Dicke aufgebracht, nachdem beide Flächen zuvor, wie beim ersten Ausführungsbeispiel erwähnt, ausreichend gereinigt worden sind.In a further embodiment of the inventive method, in which not only the substrate 1, but also the body 2 made of a ceramic, in particular made of Al 2 O 3 ceramic, Fig. 2a, are according to Fig. 2b both on the connecting surface 3 of the substrate 1, as well as on the connecting surface 4 of the ceramic body 2 thin Silicon layers 5 and 6 with preferably the same thickness applied after both Sufficiently cleaned beforehand, as mentioned in the first exemplary embodiment have been.
Zwischen die mit Silizium beschichteten Verbindungsflächen wird dann eine dünne Al-Folie 7 gelegt, so dass sich eine Anordnung entsprechend Fig. 2c ergibt Bei einem vergleichbaren Anpressdruck und den bereits genannten Erwärmungstem peraturen und Haltezeiten bildet sich wie in Fig. 2d dargestellt, eine eutektiscbe, flüssige Zwischenschicht 8, die nach dem Erstarren die Haftung zwischen Substrat l und Körper 2 vermittelt. Bei Schichtdicken von etwa 1 pm für die Siliziumschichten 5 und 6 werden die grössten Festigkeiten erreicht, wenn die Dicke der dazwischenliegenden Al-Folie 7 im Bereich zwischen 5 und 100 pm liegt.Then, between the silicon-coated connecting surfaces a thin Al foil 7 is placed so that an arrangement according to FIG. 2c results With a comparable contact pressure and the temperatures mentioned above and hold times, as shown in FIG. 2d, form a eutectic, liquid Intermediate layer 8, the after solidification, the adhesion between the substrate l and body 2 conveyed. With layer thicknesses of around 1 pm for the silicon layers 5 and 6, the greatest strengths are achieved when the thickness of the Al foil 7 is in the range between 5 and 100 μm.
Mit dem erfindungsgemässen Verfahren ist es möglich, eine Verbindung zwischen einem Substrat aus Keramik einerseits und einem Körper aus Aluminium oder Keramik andererseits herzustellen, die sich durch hohe Gleichmässigkeit und Festigkeit, geringe Verfahrensdrücke und -temperaturen und durch den Umstand auszeichnet, dass die Veränderungen an den zu verbindenden Teilen während des Verbindungsvorgangs auf den unmittelbaren Bereich der Verbindungsflächen beschränkt bleiben.With the method according to the invention it is possible to establish a connection between a substrate made of ceramic on the one hand and a body made of aluminum or On the other hand, to produce ceramics, which are characterized by high uniformity and strength, low process pressures and temperatures and the fact that the changes to the parts to be connected during the connection process remain limited to the immediate area of the connecting surfaces.
Claims (10)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE19823233022 DE3233022A1 (en) | 1982-09-06 | 1982-09-06 | Method for the direct bonding of a body to a ceramic substrate |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE19823233022 DE3233022A1 (en) | 1982-09-06 | 1982-09-06 | Method for the direct bonding of a body to a ceramic substrate |
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| Publication Number | Publication Date |
|---|---|
| DE3233022A1 true DE3233022A1 (en) | 1984-03-08 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
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| DE19823233022 Withdrawn DE3233022A1 (en) | 1982-09-06 | 1982-09-06 | Method for the direct bonding of a body to a ceramic substrate |
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Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0135937A2 (en) * | 1983-09-28 | 1985-04-03 | Hitachi, Ltd. | Method of bonding alumina to metal |
| EP0197397A2 (en) * | 1985-04-01 | 1986-10-15 | Hitachi, Ltd. | A method for bonding ceramics to a metal |
| EP0280112A1 (en) * | 1987-02-27 | 1988-08-31 | Hitachi, Ltd. | Method of and device for bonding two or more members |
| EP0497499A1 (en) * | 1991-01-29 | 1992-08-05 | Optical Coating Laboratory, Inc. | Thin film coating and method |
| EP0585748A2 (en) * | 1992-09-02 | 1994-03-09 | Austria Metall AG | Method of depositing a metallic coating upon a component and method of connecting two components |
| CN110281350A (en) * | 2011-11-30 | 2019-09-27 | 部件再设计股份有限公司 | For the method for connecting material, board shaft device and so as to form multi-layer board |
Citations (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE1082179B (en) * | 1958-02-10 | 1960-05-19 | Philips Nv | Process for connecting ceramic parts to one another using a highly conductive metal |
| AT214534B (en) * | 1958-02-10 | 1961-04-10 | Philips Nv | Method for the mutual connection of ceramic parts by means of a highly conductive metal |
| US3322655A (en) * | 1963-08-12 | 1967-05-30 | United Aircraft Corp | Method of making terminated microwafers |
| DE2253915A1 (en) * | 1971-11-05 | 1973-05-10 | Thomson Csf | PROCESS FOR THE VACUUM-TIGHT CONNECTION OF PARTS MADE OF CERAMIC AND ALUMINUM AND VACUUM PISTON HAVING THIS CONNECTION |
| US3766634A (en) * | 1972-04-20 | 1973-10-23 | Gen Electric | Method of direct bonding metals to non-metallic substrates |
| DD107892A1 (en) * | 1973-11-19 | 1974-08-20 | ||
| US3907514A (en) * | 1972-10-19 | 1975-09-23 | Pure Carbon Company Inc | Aluminum carbon composite seal material |
| US3994430A (en) * | 1975-07-30 | 1976-11-30 | General Electric Company | Direct bonding of metals to ceramics and metals |
| DE2740332A1 (en) * | 1976-09-07 | 1978-03-09 | Welwyn Electric Ltd | COMPOSITE SHAPED BODY AND PROCESS FOR ITS MANUFACTURING |
| DE2848185A1 (en) * | 1977-11-09 | 1979-05-10 | Union Carbide Corp | RELAXATION OF WEARABLE METAL / CERAMIC LATCHES |
| DE2852979A1 (en) * | 1978-11-22 | 1980-06-04 | Bbc Brown Boveri & Cie | DISC ROTOR FOR AN ELECTRICAL MACHINE |
| GB2061155A (en) * | 1979-10-11 | 1981-05-13 | Secr Defence | Pressure-bonding metal and/or ceramic members by using an interposed silver foil |
| DE2318727B2 (en) * | 1972-05-03 | 1981-06-19 | Naamloze Vennootschap Philips' Gloeilampenfabrieken, Eindhoven | Method of joining a kermaic body to another body |
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1982
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Patent Citations (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE1082179B (en) * | 1958-02-10 | 1960-05-19 | Philips Nv | Process for connecting ceramic parts to one another using a highly conductive metal |
| AT214534B (en) * | 1958-02-10 | 1961-04-10 | Philips Nv | Method for the mutual connection of ceramic parts by means of a highly conductive metal |
| US3322655A (en) * | 1963-08-12 | 1967-05-30 | United Aircraft Corp | Method of making terminated microwafers |
| DE2253915A1 (en) * | 1971-11-05 | 1973-05-10 | Thomson Csf | PROCESS FOR THE VACUUM-TIGHT CONNECTION OF PARTS MADE OF CERAMIC AND ALUMINUM AND VACUUM PISTON HAVING THIS CONNECTION |
| US3766634A (en) * | 1972-04-20 | 1973-10-23 | Gen Electric | Method of direct bonding metals to non-metallic substrates |
| DE2318727B2 (en) * | 1972-05-03 | 1981-06-19 | Naamloze Vennootschap Philips' Gloeilampenfabrieken, Eindhoven | Method of joining a kermaic body to another body |
| US3907514A (en) * | 1972-10-19 | 1975-09-23 | Pure Carbon Company Inc | Aluminum carbon composite seal material |
| DD107892A1 (en) * | 1973-11-19 | 1974-08-20 | ||
| US3994430A (en) * | 1975-07-30 | 1976-11-30 | General Electric Company | Direct bonding of metals to ceramics and metals |
| DE2740332A1 (en) * | 1976-09-07 | 1978-03-09 | Welwyn Electric Ltd | COMPOSITE SHAPED BODY AND PROCESS FOR ITS MANUFACTURING |
| DE2848185A1 (en) * | 1977-11-09 | 1979-05-10 | Union Carbide Corp | RELAXATION OF WEARABLE METAL / CERAMIC LATCHES |
| DE2852979A1 (en) * | 1978-11-22 | 1980-06-04 | Bbc Brown Boveri & Cie | DISC ROTOR FOR AN ELECTRICAL MACHINE |
| GB2061155A (en) * | 1979-10-11 | 1981-05-13 | Secr Defence | Pressure-bonding metal and/or ceramic members by using an interposed silver foil |
Cited By (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0135937A2 (en) * | 1983-09-28 | 1985-04-03 | Hitachi, Ltd. | Method of bonding alumina to metal |
| EP0135937A3 (en) * | 1983-09-28 | 1986-03-12 | Hitachi, Ltd. | Method of bonding alumina to metal |
| EP0197397A2 (en) * | 1985-04-01 | 1986-10-15 | Hitachi, Ltd. | A method for bonding ceramics to a metal |
| EP0197397A3 (en) * | 1985-04-01 | 1987-04-22 | Hitachi, Ltd. | A method for bonding ceramics to each other or a ceramic to a metal |
| EP0280112A1 (en) * | 1987-02-27 | 1988-08-31 | Hitachi, Ltd. | Method of and device for bonding two or more members |
| EP0497499A1 (en) * | 1991-01-29 | 1992-08-05 | Optical Coating Laboratory, Inc. | Thin film coating and method |
| US5154810A (en) * | 1991-01-29 | 1992-10-13 | Optical Coating Laboratory, Inc. | Thin film coating and method |
| EP0585748A2 (en) * | 1992-09-02 | 1994-03-09 | Austria Metall AG | Method of depositing a metallic coating upon a component and method of connecting two components |
| EP0585748A3 (en) * | 1992-09-02 | 1995-02-08 | Austria Metall | Method of depositing a metallic coating upon a component and method of connecting two components. |
| CN110281350A (en) * | 2011-11-30 | 2019-09-27 | 部件再设计股份有限公司 | For the method for connecting material, board shaft device and so as to form multi-layer board |
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