DE3203416A1 - Process for producing an indium tin oxide layer for transparent electrodes - Google Patents
Process for producing an indium tin oxide layer for transparent electrodesInfo
- Publication number
- DE3203416A1 DE3203416A1 DE19823203416 DE3203416A DE3203416A1 DE 3203416 A1 DE3203416 A1 DE 3203416A1 DE 19823203416 DE19823203416 DE 19823203416 DE 3203416 A DE3203416 A DE 3203416A DE 3203416 A1 DE3203416 A1 DE 3203416A1
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- oxide layer
- tin oxide
- indium tin
- sputtering
- indium
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/08—Oxides
- C23C14/086—Oxides of zinc, germanium, cadmium, indium, tin, thallium or bismuth
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- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C17/00—Surface treatment of glass, not in the form of fibres or filaments, by coating
- C03C17/22—Surface treatment of glass, not in the form of fibres or filaments, by coating with other inorganic material
- C03C17/23—Oxides
- C03C17/245—Oxides by deposition from the vapour phase
- C03C17/2453—Coating containing SnO2
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/58—After-treatment
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/58—After-treatment
- C23C14/5806—Thermal treatment
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/1343—Electrodes
- G02F1/13439—Electrodes characterised by their electrical, optical, physical properties; materials therefor; method of making
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- Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- General Chemical & Material Sciences (AREA)
- Life Sciences & Earth Sciences (AREA)
- Geochemistry & Mineralogy (AREA)
- Physics & Mathematics (AREA)
- Thermal Sciences (AREA)
- Physical Vapour Deposition (AREA)
- Manufacturing Of Electric Cables (AREA)
- Chemically Coating (AREA)
Abstract
Description
Beschreibung description
Gegenstand der Erfindung ist ein Verfahren zur Herstellung einer Indium-Zinn-Oxid-Schicht bzw. eines Indium-Zinn-Oxidfilms, welche bzw. welcher als transparente Elektrode für Anzeigeeinrichtungen, wie beispielsweise Dünnfilm-Elektrolumine 5 zenzanzeigeeinrichtungen geeignet ist.The invention relates to a method for producing an indium tin oxide layer or an indium-tin-oxide film, which or which as a transparent electrode for display devices such as thin-film electroluminescent display devices suitable is.
Die Indium-Zinn-Oxidschicht enthält In203 als Hauptbestandteil, welcher SnO2 enthält. Die Indium-Zinn-Oxidschicht wird als transparenter, leitender Film verwendet, da sie einen niedrigen spezifischen Widerstand und eine hohe Transparenz besitzt. Sie kann vielfältig als transparente Elektroden für Dünnfilm-Elektrolumineszenzanzeigeeinrichtungen, Flüssigkristallanzeigeeinrichtungen, elektrochrome Anzeigeeinrichtungen etc. verwendet werden.The indium tin oxide layer contains In203 as the main component, which Contains SnO2. The indium tin oxide layer is used as a transparent, conductive film used because of their low resistivity and high transparency owns. It can be used in many ways as transparent electrodes for thin-film electroluminescent display devices, Liquid crystal display devices, electrochromic display devices, etc. are used will.
In jüngerer Zeit sind die Indium-Zinn-Oxidschichten (ITO-Schichten) in Abhängigkeit von der Art des eingesetzten Targets mit Hilfe der folgenden Sputtermethoden, die in der nachfolgenden Tabelle I zusammengefaßt sind, erzeugt worden.More recently, the indium tin oxide layers (ITO layers) depending on the type of target used with the help of the following sputtering methods, which are summarized in Table I below.
TABELLE I Target Sputtermethode Oxid (In203 + SnO2) Gleichspannungs-Sputtern Hochfrequenz-Sputtern Metall (In + Sn) Gleichspannungs-Sputtern II Hochfrequenz-Sputtern Von diesen Sputtermethoden (Kathodenzerstäubungsmethoden) sind im Hinblick auf die Kosten des Targets und der Vorrichtung reaktive Sputtermethoden bevorzugt, bei denen in einer Atmosphäre von aktiven Gasen (Ar + 02) unter Verwendung eines Metalltargets eine Gleichspannung angewandt wird. Insbesondere ist das Gleichspannungs-Planarmagnetronsputtern als reaktive Sputtermethode besonders bevorzugt, da sie eine große Auswahl von Drücken des Sputtergases ermöglicht, die Sputtergeschwindigkeit erhöht und für eine geradlinige Abscheidung vom Target zum Substrat und damit für eine Massenproduktion geeignet ist. TABLE I Target sputtering method Oxide (In203 + SnO2) DC voltage sputtering High-frequency metal sputtering (In + Sn) DC sputtering II High-frequency sputtering Of these sputtering methods (sputtering methods) are in view of the Cost of the target and the device reactive sputtering methods preferred when using in an atmosphere of active gases (Ar + 02) a DC voltage is applied to a metal target. In particular, this is DC planar magnetron sputtering particularly preferred as a reactive sputtering method because of its wide range of pressures of the sputtering gas enables the sputtering speed to be increased and for a straight line Deposition from the target to the substrate and therefore suitable for mass production is.
Der Nachteil der Gleichspannungs-Sputtermethoden unter Verwendung eines Metalltargets ist jedoch darin zu sehen, daß die Reproduzierbarkeit der Indium-Zinn-Oxidschicht schlecht ist. Demzufolge besteht ein erhebliches Bedürfnis zur Verbesserung der Reproduzierbarkeit der Indium-Zinn-Oxidschicht.The disadvantage of using DC voltage sputtering methods of a metal target can be seen in the fact that the reproducibility of the indium-tin-oxide layer bad is. Accordingly, there is a great need to improve the Reproducibility of the indium tin oxide layer.
Die Aufgabe der vorliegenden Erfindung besteht somit darin, ein verbessertes Verfahren zur Herstellung einer Indium-Zinn-Oxidschicht anzugeben, welche für Anzeigeeinrichtungen, beispielsweise Dünnfilm-Elektrolumineszenzanzeigen, verwendet werden kann.The object of the present invention is therefore to provide an improved Specify a method for the production of an indium-tin-oxide layer, which is used for display devices, for example thin film electroluminescent displays can be used.
Diese Aufgabe wird nun durch das Verfahren gemäß Hauptanspruch gelöst.This object is now achieved by the method according to the main claim.
Die Unteransprüche betreffen besonders bevorzugte Ausführungsformen dieses erfindungsgemäßen Verfahrens sowie die mit Hilfe dieser Verfahrensweise erhältlichen Indium-Zinn-Oxidschichten.The subclaims relate to particularly preferred embodiments this process according to the invention and those obtainable with the aid of this procedure Indium tin oxide layers.
Das erfindungsgemäße Verfahren zur Herstellung oder Erzeugung einer Indium-Zinn-Oxidschicht oder eines Indium-Zinn-Oxidfilms besteht nun darin, daß man die Indium- Zinn-Oxidschicht oder den Indium-Zinn-Oxidfilm durch Sputtern unter Verwendung eines Targets aus einer In-Sn-Metallegierung in einer ein aktives Gas enthaltenden Atmosphäre auf einem hitzebeständigen Substrat abscheidet und die Indium-Zinn-Oxidschicht bzw. den Indium-Zinn-Oxidfilm in einer sauerstofffreien Atmosphäre bei einer Temperatur von etwa 550 bis 6500C wärmebehandelt.The inventive method for producing or producing a Indium tin oxide layer or an indium tin oxide film now consists in that one the indium Tin oxide layer or the indium tin oxide film Sputtering using an In-Sn metal alloy target in one depositing an active gas-containing atmosphere on a refractory substrate and the indium-tin-oxide layer and the indium-tin-oxide film, respectively, in an oxygen-free one Atmosphere at a temperature of about 550 to 6500C.
Vorzugsweise verwendet man als hitzebeständiges Substrat ein Aluminoborosilikat. Bezüglich des Sputtervorgangs wendet man vorzugsweise das reakcive Sputtern oder die reaktive Kathodenzerstäubung an.An aluminoborosilicate is preferably used as the heat-resistant substrate. With regard to the sputtering process, reactive sputtering or is preferably used reactive cathode sputtering.
Erfindungsgemäß wird die Indium-Zinn-Oxidschicht durch reaktives Sputtern unter Verwendung eines Metallegierungstargets (In + Sn) in einer aktive Gase enthaltenden Atmosphäre (Ar + 02) erzeugt. In diesem Fall hängt die Sputtergeschwindigkeit in kritischer Weise stark von dem Sauerstoffpartialdruck ab.According to the invention, the indium tin oxide layer is made by reactive sputtering using a metal alloy target (In + Sn) in one containing active gases Atmosphere (Ar + 02) created. In this case, the sputtering speed depends on critically, depends strongly on the partial pressure of oxygen.
Insbesondere wenn ein niedriger Sauerstoffpartialdruck angewandt wird, ergibt sich eine langsame Oxidation der Targetoberfläche, so daß eine schnelle Sputtergeschwindigkeit möglich wird, so daß der aufgesputterte Film nicht oxidiert werden kann. Wenn ein hoher Sauerstoffpartialdruck angewandt wird, erfolgt eine schnelle Oxidation der Targetoberfläche, was zu einer langsamen Sputtergeschwindigkeit führt, was wiederum zur Folge hat, daß der aufgesputterte Film oder die aufgesputterte Schicht praktisch vollständig oxidiert wird und einen hohen Widerstand besitzt.Especially when a low partial pressure of oxygen is used, there is a slow oxidation of the target surface, so that a fast sputtering speed becomes possible so that the sputtered film cannot be oxidized. When a If high partial pressure of oxygen is applied, rapid oxidation of the Target surface, which leads to a slow sputtering speed, which in turn As a result, the sputtered film or layer is practical is completely oxidized and has a high resistance.
Demzufolge wird vorzugsweise ein mäßiger Sauerstoffpartialdruck ausgewählt, um eine hochtransparente Schicht mit niedrigem Widerstand zu erzeugen, da bei Anwendung eines mittleren Partialdrucks eine geeignete, sauer- stoffarme Schicht gebildet werden kann. Vorzugsweise liegt der Sauerstoffpartialdruck in Abhängigkeit von den Sputterbedingungen im Bereich-von 1,33 x 10 4 bis 1,33 x 10 3 mbar (1 x 10 4 bis 1 x 10 3 Torr). Es ist jedoch äußerst schwierig, den Sauerstoffpartialdruck genau zu steuern.Accordingly, a moderate oxygen partial pressure is preferably selected, to create a highly transparent, low-resistance layer as it is used a medium partial pressure a suitable, acidic low-fabric layer can be formed. The oxygen partial pressure is preferably dependent of the sputtering conditions in the range from 1.33 x 10 4 to 1.33 x 10 3 mbar (1 x 10 4 to 1 x 10 3 Torr). However, it is extremely difficult to control the partial pressure of oxygen to steer precisely.
Die Eigenschaften der aufgesputterten Schicht hängen von der während des Sputterns angewandten Substrattemperatur ab. Je höher die Temperatur liegt, um so zufriedenstellender sind die Eigenschaften. Das Substrat kann jedoch nicht auf mehr als etwa 4000C erhitzt werden. Demzufolge ist es üblich, die durch Sputtern erzeugte Indium-Zinn-Oxidschicht wärmezubehandeln oder zu glühen. Üblicherweise liegt die Glühtemperatur im Bereich von 300 bis 400"C. The properties of the sputtered layer depend on the during substrate temperature applied during sputtering. The higher the temperature, the more satisfactory are the properties. However, the substrate cannot be heated to more than about 4000C. As a result, it is common to use sputtering heat-treat or anneal the indium-tin-oxide layer produced. Usually the annealing temperature is in the range from 300 to 400 "C.
Die erfindungsgemäße Wärmebehandlung der Indium-Zinn-Oxidschicht kann.Abweichungen des Widerstands und der Transparenz als Veränderung des Sauerstoffpartialdrucks ausgleichen. Es ist demzufolgenicht notwendig, den Sauerstoffpartialdruck bei dem erfindungsgemäßen Verfahren genau einzustellen. The heat treatment of the indium tin oxide layer according to the invention Deviations in resistance and transparency as a change in oxygen partial pressure balance. It is therefore not necessary to determine the partial pressure of oxygen at the precisely adjust the method according to the invention.
Im folgenden sei die Beziehung zwischen den Schichteigenschaften und der Glühtemperatur verdeutlicht. Dazu wurde eine aufgesputterte Schicht auf einem hitzebeständigen Substrat, welches vorzugsweise aus Glas besteht, gebildet. Das Glühen erfolgte im Vakuum. Die nachfolgend angegebenen Daten sind jene von Schichten, die durch reaktives Sputtern unter Anwendung der Gleichspannungs-Planarmagnetronsputtermethode erzeugt worden sind. The following is the relationship between the layer properties and the annealing temperature. For this purpose, a sputtered layer was applied a heat-resistant substrate, which is preferably made of glass, formed. The annealing took place in a vacuum. The data given below are those of layers those by reactive sputtering using the DC planar magnetron sputtering method have been generated.
Unmittelbar nach dem Sputtern: Probe Spezifischer Widerstand Transparenz (Ohm x cm) A 6,5 x 10 64,0 % B 4,2 x 10 86,2 C 7,1 x 10-4 88,0 Nach dem Glühen bei etwa 400°C: Probe Spezifischer Widerstand Transparenz (Ohm x cm) A 4,0 x 10-4 77,2 % B 1,7 x 10-4 89,5 % C 2,8 x 10 4 89,7 % Nach dem Glühen bei etwa 6000C: Probe Spezifischer Widerstand Transparenz (Ohm x cm) A 1,7 x 10 88,0 % B 1,7 x 10 4 90,2 % C 1,9 x 10 91,0 % Die Transparenz oder die Durchlässigkeit wird an der Kombination aus dem Substrat und der aufgesputterten Schicht gemessen. Dabei zeigt das Glassubstrat allein eine Transparenz von etwa 94 bis 95%. Die Dicke des Substrats beträgt etwa 2,3 mm. Man mißt die Transparenz mit Licht einer Wellenlänge von 530 nm. Die Dicke der Indium-Zinn-Oxidschicht beträgt etwa 150 nm (1500 i). Der Glühvorgang wurde während etwa 30 Minuten durchgeführt.Immediately after sputtering: sample specific resistance transparency (Ohm x cm) A 6.5 x 10 64.0% B 4.2 x 10 86.2 C 7.1 x 10-4 88.0 After annealing at about 400 ° C: sample specific resistance transparency (ohms x cm) A 4.0 x 10-4 77.2 % B 1.7 x 10-4 89.5% C 2.8 x 10 4 89.7% After annealing at about 6000C: sample Specific resistance transparency (Ohm x cm) A 1.7 x 10 88.0% B 1.7 x 10 4 90.2 % C 1.9 x 10 91.0% The transparency or the permeability is determined by the combination measured from the substrate and the sputtered layer. The glass substrate shows a transparency of about 94 to 95% alone. The thickness of the substrate is about 2.3 mm. The transparency is measured with light having a wavelength of 530 nm. The thickness the indium tin oxide layer is about 150 nm (1500 i). The glow process was carried out for about 30 minutes.
Die Probe B umfaßt eine Schicht, die bei einem bevorzugten Sauerstoffpartialdruck aufgesputtert worden ist.Sample B comprises a layer that is at a preferred partial pressure of oxygen has been sputtered on.
Sie zeigt einen guten spezifischen Widerstand und eine gute Transparenz. Die Eigenschaften der Probe B können durch Glühen verbessert werden, wobei jedoch die Verbesserung der Eigenschaften der Probe B nicht in kritischem Umfang von der Glühtemperatur abhängt.It shows a good specific resistance and a good transparency. The properties of sample B can be improved by annealing, however the improvement in the properties of sample B is not critical of the Annealing temperature depends.
Die Probe A entspricht einer Schicht, die bei einem Sauerstoffpartialdruck aufgesputtert worden ist, der unterhalb des bevorzugten Sauerstoffpartialdrucks liegt. Die Probe C umfaßt eine Schicht, die bei einem Sauerstoffpartialdruck aufgesputtert worden ist, der oberhalb des bevorzugten Sauerstoffpartialdrucks liegt. Es ist zu erkennen, daß die Probe A eine geringe Transparenz und die Probe C einen hohen Widerstand aufweisen. Die Proben A und C können durch Glühen bei etwa 6000C stärker verbessert werden als bei Glühen bei etwa 4000C.Sample A corresponds to a layer that is exposed to a partial pressure of oxygen has been sputtered below the preferred oxygen partial pressure lies. Sample C comprises a layer which is sputtered on at a partial pressure of oxygen which is above the preferred partial pressure of oxygen. It's closed recognize that Sample A is poor in transparency and Sample C is high in resistance exhibit. Samples A and C can be further enhanced by annealing at about 6000C than when annealing at about 4000C.
Somit kann man durch Glühen bei etwa 6000C die Eigenschaften der aufgesputterten Schicht vergleichmäßigen und damit die Reproduzierbarkeit sicherstellen. Vorzugsweise führt man den Glühvorgang bei etwa 550 bis 6500C durch. Unterhalb dieses Temperaturbereichs ist der Effekt der Glühbehandlung nicht zu erwarten. Oberhalb dieses Temperaturbereichs kann eine Zersetzung der Indium-Zinn-Oxidschicht erfolgen..Der Glühvorgang kann in einer sauerstofffreien Atmosphäre, wie in einer Argonatmosphäre, statt im oben erwähnten Vakuum durchgeführt werden.Thus, by annealing at about 6000C, the properties of the sputtered-on can be seen Even out the layer and thus ensure reproducibility. Preferably the annealing process is carried out at about 550 to 6500C. Below this temperature range the effect of the annealing treatment is not to be expected. Above this temperature range the indium-tin-oxide layer can decompose. The annealing process can in an oxygen-free atmosphere, such as an argon atmosphere, instead of the above mentioned vacuum can be carried out.
Vorzugsweise verwendet man als hitzebeständiges Substrat, auf dem die Indium-Zinn-Oxidschicht zur Ausbildung einer Anzeigeeinrichtung ausgebildet wird, ein Aluminoborosilikatglas. Die Aluminoborosilikatgläser gehören zu den Borosilikatgläsern, besitzen jedoch eine höhere Entspannungstemperatur von etwa 650-OC oder mehr, da sie einen hohen Gehalt des Aluminiumoxidbestandteils aufweisen.Is preferably used as a heat-resistant substrate on which the indium tin oxide layer is formed to form a display device becomes, an aluminoborosilicate glass. The aluminoborosilicate glasses belong to the borosilicate glasses, however, have a higher relaxation temperature of about 650-OC or more because they one have a high content of the alumina component.
Ein Beispiel eines solchen Glases ist das von der Firma Hoya Electronics Co., Ltd., Japan vertriebene Materialt-30, welches eine Entspannungstemperatur von 6500C aufweist.An example of such a glass is that from Hoya Electronics Co., Ltd., Japan, which has a relaxation temperature of 6500C.
Normalerweise kann das Aluminoborosilikatglas der Maßnahme des Erhitzens auf etwa 550 bis 650"C, der die Indium-Zinn-Oxidschicht unterworfen wird, widerstehen.Usually the aluminoborosilicate glass can be the measure of heating to about 550 to 650 "C to which the indium tin oxide layer is subjected.
Erfindungsgemäß ist die Wärmebehandlung der Indium-Zinn-Oxidschicht bei etwa 550 bis 6500C wesentlich. Demzufolge ge kann die Methode, nach der die Indium-Zinn-Oxidschicht erzeugt wird, frei ausgewählt werden, so daß diese Schicht beispielsweise durch Gleichspannungs-Sputtern oder Hochspannungssputtern oder auch durch reaktives Sputtern erzeugt werden kann.The heat treatment of the indium tin oxide layer is in accordance with the invention substantially at about 550 to 6500C. As a result, the method by which the Indium tin oxide layer is produced, can be freely selected, so that this layer for example by direct voltage sputtering or high voltage sputtering or else can be generated by reactive sputtering.
Claims (8)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP56015410A JPS57130303A (en) | 1981-02-03 | 1981-02-03 | Method of producing transparent conductive film |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| DE3203416A1 true DE3203416A1 (en) | 1982-08-12 |
| DE3203416C2 DE3203416C2 (en) | 1991-02-14 |
Family
ID=11887961
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE19823203416 Granted DE3203416A1 (en) | 1981-02-03 | 1982-02-02 | Process for producing an indium tin oxide layer for transparent electrodes |
Country Status (4)
| Country | Link |
|---|---|
| US (1) | US4399015A (en) |
| JP (1) | JPS57130303A (en) |
| DE (1) | DE3203416A1 (en) |
| GB (1) | GB2094355B (en) |
Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE3307661A1 (en) * | 1983-03-04 | 1984-09-06 | Leybold-Heraeus GmbH, 5000 Köln | METHOD FOR PRODUCING WINDOWS WITH HIGH TRANSMISSION BEHAVIOR IN THE VISIBLE SPECTRAL AREA AND WITH HIGH REFLECTION BEHAVIOR FOR HEAT RADIATION |
| FR2562268A1 (en) * | 1984-04-02 | 1985-10-04 | Mitsubishi Electric Corp | ANTI-REFLECTIVE FILM FOR PHOTOELECTRIC DEVICES AND THEIR MANUFACTURING METHOD |
| DE3413587A1 (en) * | 1984-04-11 | 1985-10-17 | Flachglas AG, 8510 Fürth | METHOD FOR PRODUCING THE TIN DIOXIDE INTERFERENCE LAYER (S), IN PARTICULAR FROM HEAT-REFLECTING-COATED GLASS DISKS BY REACTIVE MAGNETRONIC SPRAYING, TIN TARGET TO ITS IMPLEMENTATION, AND ALSO ITSELF, AS WELL AS ITSELF |
| FR2584392A1 (en) * | 1985-07-03 | 1987-01-09 | Saint Gobain Vitrage | Treatment of thin layers of metal oxide or of metal with a view to modifying their characteristics |
| EP0343695A1 (en) * | 1984-10-29 | 1989-11-29 | Ppg Industries, Inc. | Sputtered films for metal alloy oxides |
| EP0350362A1 (en) * | 1988-07-08 | 1990-01-10 | Saint-Gobain Vitrage International | Process for the production of a transparent layer with a low resistance |
| DE4239355A1 (en) * | 1992-11-24 | 1994-05-26 | Leybold Ag | Transparent substrate with a transparent layer system and method for producing such a layer system |
| DE4412318C1 (en) * | 1994-04-11 | 1995-11-16 | Ver Glaswerke Gmbh | Heat treatment of a glass pane provided with a partially reflecting silver layer |
Families Citing this family (29)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4650557A (en) * | 1982-11-03 | 1987-03-17 | Donnelly Corporation | Process for making a conductively coated glass member and the product thereof |
| US4490227A (en) * | 1982-11-03 | 1984-12-25 | Donnelly Mirrors, Inc. | Process for making a curved, conductively coated glass member and the product thereof |
| US4512863A (en) * | 1983-09-09 | 1985-04-23 | Ppg Industries, Inc. | Stainless steel primer for sputtered films |
| NL8401721A (en) * | 1984-05-29 | 1985-12-16 | Leer Koninklijke Emballage | METHOD AND SYSTEM FOR PRODUCING A REACTIVELY SPLASHED CONDUCTIVE TRANSPARENT METAL OXIDE FILM ON A CONTINUOUS MATERIAL TRACK. |
| US5851642A (en) * | 1985-01-22 | 1998-12-22 | Saint-Gobain Vitrage | Product produced by coating a substrate with an electrically conductive layer |
| JPS61261235A (en) * | 1985-05-13 | 1986-11-19 | Nissan Chem Ind Ltd | Method for forming transparent electrically conductive film |
| US4655811A (en) * | 1985-12-23 | 1987-04-07 | Donnelly Corporation | Conductive coating treatment of glass sheet bending process |
| JPH02111871A (en) * | 1988-10-18 | 1990-04-24 | Nippon Telegr & Teleph Corp <Ntt> | Production of tantalum oxide-silicon oxide mixed film |
| US4969956A (en) * | 1989-12-19 | 1990-11-13 | The United States Of America As Represented By The Secretary Of Commerce | Transparent thin film thermocouple |
| US6008078A (en) * | 1990-07-24 | 1999-12-28 | Semiconductor Energy Laboratory Co., Ltd. | Method for manufacturing a semiconductor device |
| US5153142A (en) * | 1990-09-04 | 1992-10-06 | Industrial Technology Research Institute | Method for fabricating an indium tin oxide electrode for a thin film transistor |
| US5206749A (en) * | 1990-12-31 | 1993-04-27 | Kopin Corporation | Liquid crystal display having essentially single crystal transistors pixels and driving circuits |
| US5475514A (en) | 1990-12-31 | 1995-12-12 | Kopin Corporation | Transferred single crystal arrayed devices including a light shield for projection displays |
| US5751261A (en) * | 1990-12-31 | 1998-05-12 | Kopin Corporation | Control system for display panels |
| US5444557A (en) * | 1990-12-31 | 1995-08-22 | Kopin Corporation | Single crystal silicon arrayed devices for projection displays |
| US5661371A (en) * | 1990-12-31 | 1997-08-26 | Kopin Corporation | Color filter system for light emitting display panels |
| US5915285A (en) * | 1993-01-21 | 1999-06-22 | Optical Coating Laboratory, Inc. | Transparent strain sensitive devices and method |
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| US5708233A (en) * | 1994-02-22 | 1998-01-13 | Kabushiki Kaisha Ohara | Thermoelectric semiconductor material |
| US5698262A (en) * | 1996-05-06 | 1997-12-16 | Libbey-Owens-Ford Co. | Method for forming tin oxide coating on glass |
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| EP2643493A1 (en) | 2010-11-24 | 2013-10-02 | The Regents of the University of California | Colloidal infrared reflective and transparent conductive aluminum-doped zinc oxide nanocrystals |
| WO2016115311A1 (en) * | 2015-01-14 | 2016-07-21 | Corning Incorporated | Glass substrate and display device comprising the same |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE1909869A1 (en) * | 1968-02-28 | 1969-09-18 | Ppg Industries Inc | Process for the production of conductive metal oxide coatings |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| US3749658A (en) * | 1970-01-02 | 1973-07-31 | Rca Corp | Method of fabricating transparent conductors |
| JPS5170492A (en) * | 1974-12-16 | 1976-06-18 | Kogyo Gijutsuin | Teiteikono sankainjiumudodenmakuno seizoho |
| JPS5234391A (en) * | 1975-09-12 | 1977-03-16 | Hitachi Ltd | Production method of transparent electrode film |
| JPS541331A (en) * | 1977-06-06 | 1979-01-08 | Nissan Chemical Ind Ltd | Mixing agent for cement compositions |
| JPS5541959A (en) * | 1978-09-18 | 1980-03-25 | Sanyo Shinku Kogyo Kk | Production of indium oxide transparent conductive film through sputtering |
-
1981
- 1981-02-03 JP JP56015410A patent/JPS57130303A/en active Pending
-
1982
- 1982-02-01 US US06/344,520 patent/US4399015A/en not_active Expired - Lifetime
- 1982-02-02 DE DE19823203416 patent/DE3203416A1/en active Granted
- 1982-02-02 GB GB8202939A patent/GB2094355B/en not_active Expired
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE1909869A1 (en) * | 1968-02-28 | 1969-09-18 | Ppg Industries Inc | Process for the production of conductive metal oxide coatings |
Non-Patent Citations (4)
| Title |
|---|
| AT-B.: Symposium on Sputtering, Proccedings, Perchtoldsdorf/Wien 28.-30. April 1980, S. 898- 915, Herausgeber TU Wien, Juni 1980 * |
| DE-Z.: Vakuum-Technik, 26. Jg., 1977, S. 108-115 * |
| GB-Z.: Thin Solid Films, 58, 1979, S. 379-384 * |
| Vortragsmanuskript: Münz & Kaiser, Magnetron Sputtering of Indium-Tin-Oxide Films, S. 1-9 u. Abb. 1-10, AVS-Show 1978, San Francisco * |
Cited By (14)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE3307661A1 (en) * | 1983-03-04 | 1984-09-06 | Leybold-Heraeus GmbH, 5000 Köln | METHOD FOR PRODUCING WINDOWS WITH HIGH TRANSMISSION BEHAVIOR IN THE VISIBLE SPECTRAL AREA AND WITH HIGH REFLECTION BEHAVIOR FOR HEAT RADIATION |
| US4673476A (en) * | 1984-04-02 | 1987-06-16 | Mitsubishi Denki Kabushiki Kaisha | Antireflective film for photoelectric devices and manufacturing method thereof |
| DE3511675A1 (en) * | 1984-04-02 | 1985-12-05 | Mitsubishi Denki K.K., Tokio/Tokyo | ANTIREFLEX FILM FOR A PHOTOELECTRICAL DEVICE AND MANUFACTURING METHOD THEREFOR |
| US4649088A (en) * | 1984-04-02 | 1987-03-10 | Mitsubishi Denki Kabushiki Kaisha | Antireflective film for photoelectric devices |
| FR2562268A1 (en) * | 1984-04-02 | 1985-10-04 | Mitsubishi Electric Corp | ANTI-REFLECTIVE FILM FOR PHOTOELECTRIC DEVICES AND THEIR MANUFACTURING METHOD |
| DE3511675C2 (en) * | 1984-04-02 | 1989-08-10 | Mitsubishi Denki K.K., Tokio/Tokyo, Jp | |
| DE3413587A1 (en) * | 1984-04-11 | 1985-10-17 | Flachglas AG, 8510 Fürth | METHOD FOR PRODUCING THE TIN DIOXIDE INTERFERENCE LAYER (S), IN PARTICULAR FROM HEAT-REFLECTING-COATED GLASS DISKS BY REACTIVE MAGNETRONIC SPRAYING, TIN TARGET TO ITS IMPLEMENTATION, AND ALSO ITSELF, AS WELL AS ITSELF |
| EP0343695A1 (en) * | 1984-10-29 | 1989-11-29 | Ppg Industries, Inc. | Sputtered films for metal alloy oxides |
| FR2584392A1 (en) * | 1985-07-03 | 1987-01-09 | Saint Gobain Vitrage | Treatment of thin layers of metal oxide or of metal with a view to modifying their characteristics |
| EP0350362A1 (en) * | 1988-07-08 | 1990-01-10 | Saint-Gobain Vitrage International | Process for the production of a transparent layer with a low resistance |
| FR2633920A1 (en) * | 1988-07-08 | 1990-01-12 | Saint Gobain Vitrage | PROCESS FOR PRODUCING A TRANSPARENT LAYER WITH LOW RESISTIVITY |
| DE4239355A1 (en) * | 1992-11-24 | 1994-05-26 | Leybold Ag | Transparent substrate with a transparent layer system and method for producing such a layer system |
| DE4412318C1 (en) * | 1994-04-11 | 1995-11-16 | Ver Glaswerke Gmbh | Heat treatment of a glass pane provided with a partially reflecting silver layer |
| DE4412318C2 (en) * | 1994-04-11 | 1998-08-13 | Ver Glaswerke Gmbh | Heat treatment of a glass pane provided with a partially reflecting silver layer |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS57130303A (en) | 1982-08-12 |
| GB2094355A (en) | 1982-09-15 |
| GB2094355B (en) | 1985-01-03 |
| US4399015A (en) | 1983-08-16 |
| DE3203416C2 (en) | 1991-02-14 |
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