[go: up one dir, main page]
More Web Proxy on the site http://driver.im/

DE3104960A1 - "feinstdraht" - Google Patents

"feinstdraht"

Info

Publication number
DE3104960A1
DE3104960A1 DE19813104960 DE3104960A DE3104960A1 DE 3104960 A1 DE3104960 A1 DE 3104960A1 DE 19813104960 DE19813104960 DE 19813104960 DE 3104960 A DE3104960 A DE 3104960A DE 3104960 A1 DE3104960 A1 DE 3104960A1
Authority
DE
Germany
Prior art keywords
copper
weight
fine wire
aluminum
fine
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
DE19813104960
Other languages
English (en)
Other versions
DE3104960C2 (de
Inventor
Fritz Dipl.-Ing. Dr. 6458 Rodenbach Aldinger
Albrecht Dipl.-Phys. Dr. 6454 Bruchköbel Bischoff
Wolfgang 6052 Mühlheim Bonifer
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
WC Heraus GmbH and Co KG
Original Assignee
WC Heraus GmbH and Co KG
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by WC Heraus GmbH and Co KG filed Critical WC Heraus GmbH and Co KG
Priority to DE3153395A priority Critical patent/DE3153395C2/de
Priority to DE19813104960 priority patent/DE3104960A1/de
Priority to GB8135741A priority patent/GB2093064B/en
Priority to CH79/82A priority patent/CH652532A5/de
Priority to FR8202254A priority patent/FR2499767A1/fr
Priority to JP57019859A priority patent/JPS57149744A/ja
Publication of DE3104960A1 publication Critical patent/DE3104960A1/de
Application granted granted Critical
Publication of DE3104960C2 publication Critical patent/DE3104960C2/de
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/42—Wire connectors; Manufacturing methods related thereto
    • H01L24/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L24/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • C—CHEMISTRY; METALLURGY
    • C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22C—ALLOYS
    • C22C9/00—Alloys based on copper
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L24/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
    • H01L2224/0554—External layer
    • H01L2224/05599—Material
    • H01L2224/056—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/05617—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 400°C and less than 950°C
    • H01L2224/05624—Aluminium [Al] as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/4501—Shape
    • H01L2224/45012—Cross-sectional shape
    • H01L2224/45015—Cross-sectional shape being circular
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/45099—Material
    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45117—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 400°C and less than 950°C
    • H01L2224/45124—Aluminium (Al) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/45099—Material
    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/45144—Gold (Au) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/45099—Material
    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/45147—Copper (Cu) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/484—Connecting portions
    • H01L2224/4847—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a wedge bond
    • H01L2224/48472—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a wedge bond the other connecting portion not on the bonding area also being a wedge bond, i.e. wedge-to-wedge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/485—Material
    • H01L2224/48505—Material at the bonding interface
    • H01L2224/48699—Principal constituent of the connecting portion of the wire connector being Aluminium (Al)
    • H01L2224/487—Principal constituent of the connecting portion of the wire connector being Aluminium (Al) with a principal constituent of the bonding area being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/48717—Principal constituent of the connecting portion of the wire connector being Aluminium (Al) with a principal constituent of the bonding area being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 400°C and less than 950 °C
    • H01L2224/48724—Aluminium (Al) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H01L2224/852—Applying energy for connecting
    • H01L2224/85201—Compression bonding
    • H01L2224/85205—Ultrasonic bonding
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/42—Wire connectors; Manufacturing methods related thereto
    • H01L24/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L24/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/00011—Not relevant to the scope of the group, the symbol of which is combined with the symbol of this group
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/00014—Technical content checked by a classifier the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01004—Beryllium [Be]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01006—Carbon [C]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01013—Aluminum [Al]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01014—Silicon [Si]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01015—Phosphorus [P]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01023—Vanadium [V]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01024—Chromium [Cr]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01029—Copper [Cu]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/0103—Zinc [Zn]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01033—Arsenic [As]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/0104—Zirconium [Zr]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01047—Silver [Ag]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/0105—Tin [Sn]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01057—Lanthanum [La]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01061—Promethium [Pm]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01075—Rhenium [Re]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01076—Osmium [Os]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01079—Gold [Au]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01082—Lead [Pb]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/012—Semiconductor purity grades
    • H01L2924/01203—3N purity grades, i.e. 99.9%
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/102—Material of the semiconductor or solid state bodies
    • H01L2924/1025—Semiconducting materials
    • H01L2924/10251—Elemental semiconductors, i.e. Group IV
    • H01L2924/10253—Silicon [Si]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/20—Parameters
    • H01L2924/207—Diameter ranges
    • H01L2924/20751—Diameter ranges larger or equal to 10 microns less than 20 microns
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/20—Parameters
    • H01L2924/207—Diameter ranges
    • H01L2924/20752—Diameter ranges larger or equal to 20 microns less than 30 microns
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/20—Parameters
    • H01L2924/207—Diameter ranges
    • H01L2924/20753—Diameter ranges larger or equal to 30 microns less than 40 microns
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/20—Parameters
    • H01L2924/207—Diameter ranges
    • H01L2924/20754—Diameter ranges larger or equal to 40 microns less than 50 microns
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/20—Parameters
    • H01L2924/207—Diameter ranges
    • H01L2924/20755—Diameter ranges larger or equal to 50 microns less than 60 microns
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/20—Parameters
    • H01L2924/207—Diameter ranges
    • H01L2924/20756—Diameter ranges larger or equal to 60 microns less than 70 microns

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Conductive Materials (AREA)
  • Wire Bonding (AREA)
  • Connections Effected By Soldering, Adhesion, Or Permanent Deformation (AREA)

Description

Hanau, cltMi U. Irin·. 1981 /(M -Pr/i i
W. C. lleraeus GmbH, Hanau
Patentanmeldung
"Feinstdraht"
Die LrTiIi(JiIUg betrifft die» Verwendung eines einen Durchmesner von 0,01 bis 0,06 mm aufweisenden Feinstdrahtes für die Herstellung der Außenanschlüsse von Halbleiter-Bauelementen.
Es ist bekannt, Feinstdrähte aus Gold, Aluminium oder Aluminiumlegierungen, zum Beispiel AlSiI, AlCu4 (deutsche Offenlegungsschrift 29 29 623) und AlMgI, für die Herstellung der Außenanschlüsse von Halbleiter-Bauelementen zu verwenden.
Feinstdrähte aus einem Kupfer- oder Kupferlegierungskern (besonders CuSn6) und einem Aluminium- oder Aluminiumlegierungsrnnntel werden in der deutschen Patentanmeldung P 30 23 528.0 I) ei! c Ii rieb on.
Während Feinstdrähte aus Aluminium- und Aluminiumlegierungen bevorzugt für die Herstellung Ultraschall-geschweißter Verbindungen nach dem wedge-wedge-Verfahren eingesetzt werden, können die Kern/Mantel-Drähte (Kupfer-Aluminium-Feinstdrähte) sowohl durch Ultraschall-Schweißen nach dem wedge-wedge-Verfahren als auch durch Thermosonic-Schweißen nach dem Verfahren der Nagelkopf-Kontaktierung mit den Halbleiter-Bauelementen und den Anschlußelementen verbunden werden.
Die mechanische Festigkeit und (Ii 12 elektrische 1. ι; i i. fiili icjke j I. der Verbindung ■ zwischen diesen Kcrn/Hiinli1 1 -Drähten und HnJbleiter-Dauelementen ist·gut. Bei der Ausbildung der Verbindung zwischen dem Draht und aus Kupfer oder einer Kupferlegierung bestehendem Anschlußelement, zum Beispiel einem Systemträyer, . können jedoch Schaden auftreten, die - unter Retr i ubsbedi rifjungen - zu einem Ablösen des Drahtes führen.
Die .Zuverlässigkeit von integrierten Halbleiter-Bauteilen hängt in hohem Maße von den Anschlußdrahten und drr Festigkeit ihrer Verbindung mit den Halbleiter-Bauelementen und den Anschlußelementen ab. So besteht ein Interesse an der Verbesserung der Anschlußdrähte und an der Ifntw i ek 1 uinj neuer, die auch durch die sparsamere Verwendung von I".dtvl m H a 1 I i'ii in drr Halbleiter-Technologie erforderlich wird.
Es ist daher die Aufgabe der Erfindung, einen Feinstdraht mit einem Durchmesser von 0,01 bis 0,06 mm zur Herstellung der Außenanschlusse von Halbleiter-Bauelementen zu finden, der sowohl mit aluminium-beschichteten Silicium-Halbleiter-Bauelementen als auch mit Anschlußelementen aus Kupfer oder Kupferlegierungen eine zuverlässige Verbindung bildet.
Die Aufgabe wird erfindungsgemäß durch die Verwendung eines Feinstdrahtes aus Kupfer oder einer. Kupferlegierung aus 98 bis 99,9 Gewichts-% Kupfer und 0,1 bis 2 Gowiclits;-?i Beryllium, Zinn, Zink, Silber, Zirkonium, Chrom oder Eisen gelöst.
Besonders bewährt haben sich Feinstdrähte aus den Legierungen aus 99,4 Gewichts-% Kupfer und 0,6 Gewichts-% Zinn und aus 99,85 Gewichts-% Kupfer und 0,15 Gewichts-% Zirkonium.
Kup ΓϋΓ-Ι eni rrurujen cliuaer Art sind an sich bekannt. Zum Beispiel wrrdon Legierungen des Kupfers mit 1 Gewichts-% Zinn beziehungsweise mit 0,15 Gewichts-% Zirkonium in Dies, Kupfer und Kupfnrlogicrungen in der Technik, 1967, Seite 572, beziehungsweise in der deutschen Ausjegeschrift 10 90 437 beschrieben.
Dir Kupfer- und Kupferlegierungsfeinstdrähte werden durch U 1 I. raiifha 1 1 -iic:hu/uiC)(Mi · nach dom u/rulrjo-Vcjrf ahren mit dt;n aus Kupfer odor Kup f (!!'legierungen bestehenden Anschlußelementen verbunden. Die Verbindungsstellen (Bondstellen) Feinstdraht/ Kupfer und Feinstdraht/Kupferlegierung sind frei von Fehlstellen (Risse und dergleichen). Die Abreißfestigkeit der Paare Cu/Cu, CuSnO,6/Cu und CuZrO,15/Cu ist größer als die der Paare Cu/Al und Cu/Cu-Al.
Das Verbinden der Halbleiter-Bauelemente - zum Beispiel aus mit Aluminium beschichtetem Silicium - geschieht durch Thermosonic-Schweißen nach dem Verfahren der Nagelkopf-Kontaktierung, wobei das Abflammen des Feinstdrahtendes unter Bildung einer Kugel in einer Schutzgas-Atmosphäre erfolgt.
< α.
Dei den erfindungsgemäß verwendeten Feinstdrähten ist - bei einem Durchmesser von 25 Mikrometer - der Durchmesser der sich beim Abflammen bildenden Kugeln kleiner als bei den bekannten Feinstdrähten (AlSiI : 55 Mikrometer, CuZrO,15 : 50 Mikrometer) Dieser Größenunterschied ist, wie ein Vergleich von rasterelektronenmikroskopischen Aufnahmen der Verbindungsstellen zeigt, bei den aufgeschweißten Kugeln noch ausgeprägter.
Im Hinblick auf die fortschreitende Miniaturisierung der Leiterbahnen in Halbleiter-Vorrichtungen erweist sich der geringere Durchmesser der sich beim Abflammen bildenden Kugeln als ein weiterer Vorteil der Kupfer- und Kupferlegier uIicj r, Γη i η:; t dy äh t e .
Während des T he rmosoni e-Scliu/e.i liens nach clem \/cr f'ahrrn der Nagelkopf-Kontaktierumj kann durch VcrüchwciOcn. dci: lein:;tdrähtc mit der Auotri t Lo f läehc der zur Dr riht rüliriiritj und ;i J » Sonotrode dienenden Düoe die Düsenöffnung verstopft werden. Die Kupfer- und Kupfe r 1 eq i r rungs f e j nstdräht ο mimihui - .im Gegensatz' /U solchen au» Aluminium-, Λ 1 um i π i um 1 cm| ι t· iiiikjcmi oder Kupfer-Aluminium - kaum zum Verschweißen ni.il (ItM- Düse, so da(3 die Gefahr des Von; top I" ens der Düsenö f f'n.utnj »uhr gering ist.
Weiter zeichnen sich die Kupfer- und Kupferlegierungsfeinotdrähte durch eine hohe elektrische Leitfähigkeit, eine im Vergleich zu den Feinstdrähten aus Aluminium, Alumirü umlegierungen oder Kupfer-Aluminium höhere Ermüdungsfestigkeit und eine hohe Zugfestigkeit aus, die nicht nur zu der hohen Abreißfestigkeit, sondern auch zur Ausbildung einer stabilen Drahtschleife (Loop) beiträgt.
IT)

Claims (3)

Hanau, el ι1 η 11 /PL-Pr/Ft I rl) r. J W. C. Heraous GmbH, Hanau Patentanmeldung "Feinotdraht" Patentansprüche
1. Verwendung eines einen Durchmesser von 0,01 bis 0,06 mm aufweisenden Feinstdrahtes aus Kupfer oder einer Kupferlegierung aus 98 bis 99., 9 Ge\i/ichts-?o Kupfer und 0,1 bis 2 Gewichts-?o Beryllium, Zinn, Zink, Silber, Zirkonium, Chrom oder Eisen für die Herstellung der Außenanschlüsse von Halbleiter-Bauelementen.
2. Verwendung eines Feinstdrahtes aus 99,4 Gewichts-?^ Kupfer und 0,6 Gewichts-?;; Zinn für den in Anspruch 1 yminnntcMi Zweck.
3. Verwendung eines Feinstdrahtes aus 99,85 Gewichts-?i Kupfer und 0,15 Gewichts-?Ä Zirkonium für den in Anspruch 1 genannten Zweck.
DE19813104960 1981-02-12 1981-02-12 "feinstdraht" Granted DE3104960A1 (de)

Priority Applications (6)

Application Number Priority Date Filing Date Title
DE3153395A DE3153395C2 (en) 1981-02-12 1981-02-12 Use of a very fine wire made of a copper/tin alloy
DE19813104960 DE3104960A1 (de) 1981-02-12 1981-02-12 "feinstdraht"
GB8135741A GB2093064B (en) 1981-02-12 1981-11-26 External connectors or terminals
CH79/82A CH652532A5 (de) 1981-02-12 1982-01-07 Verwendung eines feinstdrahtes fuer die herstellung der aussenanschluesse von halbleiter-bauelementen.
FR8202254A FR2499767A1 (fr) 1981-02-12 1982-02-11 Application d'un fil metallique extra-fin a la realisation des connexions exterieures de composants a semi-conducteurs
JP57019859A JPS57149744A (en) 1981-02-12 1982-02-12 Extrafine wire

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE19813104960 DE3104960A1 (de) 1981-02-12 1981-02-12 "feinstdraht"

Publications (2)

Publication Number Publication Date
DE3104960A1 true DE3104960A1 (de) 1982-08-26
DE3104960C2 DE3104960C2 (de) 1987-09-24

Family

ID=6124622

Family Applications (1)

Application Number Title Priority Date Filing Date
DE19813104960 Granted DE3104960A1 (de) 1981-02-12 1981-02-12 "feinstdraht"

Country Status (5)

Country Link
JP (1) JPS57149744A (de)
CH (1) CH652532A5 (de)
DE (1) DE3104960A1 (de)
FR (1) FR2499767A1 (de)
GB (1) GB2093064B (de)

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3514253A1 (de) * 1984-04-19 1985-10-31 Hitachi, Ltd., Tokio/Tokyo Halbleitereinrichtung
DE3606224A1 (de) * 1985-03-01 1986-09-04 Mitsubishi Denki K.K., Tokio/Tokyo Kugeltyp-bond-draehte fuer halbleitervorrichtungen und verfahren zu ihrer herstellung
DE3610587A1 (de) * 1985-03-27 1986-11-06 Mitsubishi Kinzoku K.K., Tokio/Tokyo Zum bonden von halbleitervorrichtungen geeigneter draht und verfahren zu dessen herstellung
EP1357197A1 (de) * 2002-01-07 2003-10-29 Senju Metal Industry Co., Ltd. Kleine Kupferkugeln und deren Herstellung
DE102018122574A1 (de) * 2018-09-14 2020-03-19 Kme Germany Gmbh & Co. Kg Kupferlegierung
DE102019113082A1 (de) * 2019-05-17 2020-11-19 Infineon Technologies Ag Halbleiter-gehäuse und verfahren zum bilden eines halbleiter-gehäuses
DE112017003058B4 (de) * 2016-06-20 2021-06-10 Nippon Micrometal Corporation Kupferlegierungs-Bonddrähte für Halbleiterbauteile

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5149917A (en) * 1990-05-10 1992-09-22 Sumitomo Electric Industries, Ltd. Wire conductor for harness
JPH05184788A (ja) * 1991-12-19 1993-07-27 Daiken Trade & Ind Co Ltd 乾燥庫
JPH0716797U (ja) * 1993-08-27 1995-03-20 武盛 豊永 除湿機付高温衣類乾燥機
JP2501303B2 (ja) * 1994-04-11 1996-05-29 株式会社東芝 半導体装置
JP2501305B2 (ja) * 1994-06-06 1996-05-29 株式会社東芝 半導体装置
JP2501306B2 (ja) * 1994-07-08 1996-05-29 株式会社東芝 半導体装置
DE19606116A1 (de) * 1996-02-20 1997-08-21 Berkenhoff Gmbh Elektrische Kontaktelemente
TWI287282B (en) 2002-03-14 2007-09-21 Fairchild Kr Semiconductor Ltd Semiconductor package having oxidation-free copper wire
US7820913B2 (en) 2005-01-05 2010-10-26 Nippon Steel Materials Co., Ltd. Bonding wire for semiconductor device

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1090437B (de) * 1956-08-14 1960-10-06 Nippert Electric Products Comp Verfahren zum Verbessern der elektrischen und mechanischen Eigenschaften von Kupfer-Zirkon-Legierungen
DE1127000B (de) * 1956-10-31 1974-04-11
DE2929623A1 (de) * 1979-07-21 1981-01-29 Heraeus Gmbh W C Feinstdraht aus einer aluminiumlegierung
DE3011661A1 (de) * 1980-03-26 1981-10-01 Licentia Patent-Verwaltungs-Gmbh, 6000 Frankfurt Halbleiteranordnung mit kontaktierungsdraehten
DE3023528A1 (de) 1980-06-24 1982-01-21 W.C. Heraeus Gmbh, 6450 Hanau Feistdraht zum kontaktieren von halbleiter-bauelementen

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5678357U (de) * 1979-11-09 1981-06-25

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1090437B (de) * 1956-08-14 1960-10-06 Nippert Electric Products Comp Verfahren zum Verbessern der elektrischen und mechanischen Eigenschaften von Kupfer-Zirkon-Legierungen
DE1127000B (de) * 1956-10-31 1974-04-11
DE2929623A1 (de) * 1979-07-21 1981-01-29 Heraeus Gmbh W C Feinstdraht aus einer aluminiumlegierung
DE3011661A1 (de) * 1980-03-26 1981-10-01 Licentia Patent-Verwaltungs-Gmbh, 6000 Frankfurt Halbleiteranordnung mit kontaktierungsdraehten
DE3023528A1 (de) 1980-06-24 1982-01-21 W.C. Heraeus Gmbh, 6450 Hanau Feistdraht zum kontaktieren von halbleiter-bauelementen

Non-Patent Citations (3)

* Cited by examiner, † Cited by third party
Title
DE-B.: Dies Kurt, Kupfer und Kupferlegierungen in der Technik, Springer-Verlag, Berlin/Heidelberg/New York, 1967, S. 191-206, 214-233, 254-404, 638-651, 704-723, 756-772 *
DE-B: Dies, Kurt: Kupfer und Kupferlegierungen in der Technik, Springer-Verlag, Berlin/Heidelberg/ New York, 1967, S. 504-577
DE-Z.: Umschau, Bd. 74, H. 17, 1974, S. 535-541 *

Cited By (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3514253A1 (de) * 1984-04-19 1985-10-31 Hitachi, Ltd., Tokio/Tokyo Halbleitereinrichtung
DE3606224A1 (de) * 1985-03-01 1986-09-04 Mitsubishi Denki K.K., Tokio/Tokyo Kugeltyp-bond-draehte fuer halbleitervorrichtungen und verfahren zu ihrer herstellung
US4705204A (en) * 1985-03-01 1987-11-10 Mitsubishi Denki Kabushiki Kaisha Method of ball forming for wire bonding
DE3610587A1 (de) * 1985-03-27 1986-11-06 Mitsubishi Kinzoku K.K., Tokio/Tokyo Zum bonden von halbleitervorrichtungen geeigneter draht und verfahren zu dessen herstellung
EP1357197A1 (de) * 2002-01-07 2003-10-29 Senju Metal Industry Co., Ltd. Kleine Kupferkugeln und deren Herstellung
US6799711B2 (en) 2002-01-07 2004-10-05 Senju Metal Industry Co., Ltd. Minute copper balls and a method for their manufacture
DE112017003058B4 (de) * 2016-06-20 2021-06-10 Nippon Micrometal Corporation Kupferlegierungs-Bonddrähte für Halbleiterbauteile
DE112017008353B3 (de) 2016-06-20 2022-09-29 Nippon Micrometal Corporation Kupferlegierungs-Bonddrähte für Halbleiterbauteile
DE102018122574B4 (de) * 2018-09-14 2020-11-26 Kme Special Products Gmbh Verwendung einer Kupferlegierung
DE102018122574A1 (de) * 2018-09-14 2020-03-19 Kme Germany Gmbh & Co. Kg Kupferlegierung
US12129538B2 (en) 2018-09-14 2024-10-29 Cunova Gmbh Use of a copper alloy
DE102019113082A1 (de) * 2019-05-17 2020-11-19 Infineon Technologies Ag Halbleiter-gehäuse und verfahren zum bilden eines halbleiter-gehäuses
US11715719B2 (en) 2019-05-17 2023-08-01 Infineon Technologies Ag Semiconductor package and method of forming a semiconductor package

Also Published As

Publication number Publication date
GB2093064B (en) 1984-10-31
CH652532A5 (de) 1985-11-15
JPH0237095B2 (de) 1990-08-22
DE3104960C2 (de) 1987-09-24
GB2093064A (en) 1982-08-25
FR2499767A1 (fr) 1982-08-13
JPS57149744A (en) 1982-09-16
FR2499767B3 (de) 1984-01-06

Similar Documents

Publication Publication Date Title
DE3104960A1 (de) &#34;feinstdraht&#34;
DE3023528C2 (de) Aluminium enthaltender Feinstdraht
DE3645066C2 (de)
DE19743767B4 (de) Verfahren zum Herstellen eines Halbleiterchip-Gehäuses mit einem Halbleiterchip für Oberflächenmontage sowie ein daraus hergestelltes Halbleiterchip-Gehäuse mit Halbleiterchip
DE4131413C2 (de) Bondierungsverfahren für Halbleiterchips
DE102006017042A1 (de) Zuleitungsrahmen für ein Halbleiterbauteil
DE112004000360T5 (de) Zweimetallisches Stud-Bumping für Flipchip-Anwendungen
DE2910959A1 (de) Strukturierter spannungsentlastungspuffer aus kupfer und diesen puffer enthaltende halbleiterbauteilanordnung
DE4311872A1 (de) Leiterrahmen für integrierte Schaltungen
DE3879782T2 (de) Verfahren zur herstellung eines mit kupfer ummantelten fahrdrahtes aus stahl.
DE19717368A1 (de) Drahtbondverfahren, Drahtbondvorrichtung und mit denselben hergestellte Halbleitereinrichtung
DE102010031993A1 (de) Kern-Mantel-Bändchendraht
DE4232745A1 (de) Bonddraht zum Ultraschallbonden
DE69512898T2 (de) Hochfeste lötlegierung
DE102016117389B4 (de) Leistungshalbleiterchip und Verfahren zur Herstellung eines Leistungshalbleiterchips und Leistungshalbleitereinrichtung
DE3514253A1 (de) Halbleitereinrichtung
DE2747087C2 (de) Elektrischer Kontakt und Verfahren zu dessen Herstellung
DE6606361U (de) Elektrische verbindung zwischen zwei leitern, von denen mindestens einer aus einem hart-supraleitenden material besteht
DE102006041355B4 (de) Aluminium-Bonddrähte mit eingebetteten Kupferfasern
DE3704200C2 (de)
DE3153395C2 (en) Use of a very fine wire made of a copper/tin alloy
DE3621917A1 (de) Verfahren zur herstellung elektrischer verbindungen innerhalb von halbleiterbauelementen und elektrische verbindung fuer halbleiterbauelemente
EP0020857B1 (de) Verfahren und Vorrichtung zur Herstellung eines planaren Halbleiterbauelements
DE102006011352A1 (de) Verfahren zur Herstellung einer Drahtverbindung
DE3011661C2 (de) Halbleiteranordnung mit Kontaktierungsdrähten

Legal Events

Date Code Title Description
8110 Request for examination paragraph 44
8172 Supplementary division/partition in:

Ref country code: DE

Ref document number: 3153395

Format of ref document f/p: P

Q171 Divided out to:

Ref country code: DE

Ref document number: 3153395

AH Division in

Ref country code: DE

Ref document number: 3153395

Format of ref document f/p: P

D2 Grant after examination
AH Division in

Ref country code: DE

Ref document number: 3153395

Format of ref document f/p: P

8364 No opposition during term of opposition
8327 Change in the person/name/address of the patent owner

Owner name: W. C. HERAEUS GMBH & CO. KG, 63450 HANAU, DE