DE3175010D1 - Field effect transistor - Google Patents

Field effect transistor

Info

Publication number: DE3175010D1
Authority: DE; Germany
Prior art keywords: field effect; effect transistor; transistor; field; effect
Prior art date: 1980-01-30
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.): Expired

Application number

DE8181100577T

Other languages

German (de)

Inventor

Shutaro Nanbu

Atsushi Nagashima

Gota Kano

Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)

Panasonic Holdings Corp

Original Assignee

Matsushita Electric Industrial Co Ltd

Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)

1980-01-30

Filing date

1981-01-27

Publication date

1986-09-04

Family has litigation

First worldwide family litigation filed litigation Critical https://patents.darts-ip.com/?family=11760010&utm_source=google_patent&utm_medium=platform_link&utm_campaign=public_patent_search&patent=DE3175010(D1) "Global patent litigation dataset” by Darts-ip is licensed under a Creative Commons Attribution 4.0 International License.

1981-01-27 Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd

1986-09-04 Application granted granted Critical

1986-09-04 Publication of DE3175010D1 publication Critical patent/DE3175010D1/en

Status Expired legal-status Critical Current

Classifications

- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/80—Field effect transistors with field effect produced by a PN or other rectifying junction gate, i.e. potential-jump barrier
- H01L29/812—Field effect transistors with field effect produced by a PN or other rectifying junction gate, i.e. potential-jump barrier with a Schottky gate
- H01L29/8124—Field effect transistors with field effect produced by a PN or other rectifying junction gate, i.e. potential-jump barrier with a Schottky gate with multiple gate

Landscapes

Engineering & Computer Science (AREA)
Microelectronics & Electronic Packaging (AREA)
Power Engineering (AREA)
Physics & Mathematics (AREA)
Ceramic Engineering (AREA)
Condensed Matter Physics & Semiconductors (AREA)
General Physics & Mathematics (AREA)
Computer Hardware Design (AREA)
Junction Field-Effect Transistors (AREA)

DE8181100577T 1980-01-30 1981-01-27 Field effect transistor Expired DE3175010D1 (en)

Applications Claiming Priority (1)

Application Number	Priority Date	Filing Date	Title
JP1078680A JPS56107583A (en)	1980-01-30	1980-01-30	Field effect transistor

Publications (1)

Publication Number	Publication Date
DE3175010D1 true DE3175010D1 (en)	1986-09-04

Family

ID=11760010

Family Applications (1)

Application Number	Title	Priority Date	Filing Date
DE8181100577T Expired DE3175010D1 (en)	1980-01-30	1981-01-27	Field effect transistor

Country Status (5)

Country	Link
US (1)	US4459556A (en)
EP (1)	EP0033895B1 (en)
JP (1)	JPS56107583A (en)
CA (1)	CA1160361A (en)
DE (1)	DE3175010D1 (en)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
JPS5943581A (en) *	1982-09-03	1984-03-10	Junichi Nishizawa	Semiconductor photoelectric converter
US4608583A (en) *	1983-05-23	1986-08-26	Rca Corporation	FET amplifier
US4638341A (en) *	1984-09-06	1987-01-20	Honeywell Inc.	Gated transmission line model structure for characterization of field-effect transistors
JPH05259745A (en) *	1992-03-11	1993-10-08	Sumitomo Electric Ind Ltd	Mixer circuit
US5602501A (en) *	1992-09-03	1997-02-11	Sumitomo Electric Industries, Ltd.	Mixer circuit using a dual gate field effect transistor
JP3148010B2 (en) *	1992-09-11	2001-03-19	住友電気工業株式会社	Mixer circuit
JP2757848B2 (en) *	1996-01-23	1998-05-25	日本電気株式会社	Field effect type semiconductor device
JP2003078355A (en) *	2001-09-05	2003-03-14	Mitsubishi Electric Corp	Mixer circuit

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
GB1341864A (en) *	1971-06-25	1973-12-25	Plessey Co Ltd	Field effect transistor method and device for compensating the gyromagnetic effect
US4104673A (en) *	1977-02-07	1978-08-01	Westinghouse Electric Corp.	Field effect pentode transistor

1980
- 1980-01-30 JP JP1078680A patent/JPS56107583A/en active Pending
1981
- 1981-01-27 EP EP81100577A patent/EP0033895B1/en not_active Expired
- 1981-01-27 DE DE8181100577T patent/DE3175010D1/en not_active Expired
- 1981-01-29 CA CA000369585A patent/CA1160361A/en not_active Expired
1983
- 1983-10-07 US US06/539,634 patent/US4459556A/en not_active Expired - Lifetime

Also Published As

Publication number	Publication date
EP0033895A3 (en)	1983-05-04
JPS56107583A (en)	1981-08-26
EP0033895B1 (en)	1986-07-30
EP0033895A2 (en)	1981-08-19
US4459556A (en)	1984-07-10
CA1160361A (en)	1984-01-10

Publication	Publication Date	Title
DE3176252D1 (en)	1987-07-16	Field effect transistor
GB2077493B (en)	1984-11-14	Mos transistor
DE3071139D1 (en)	1985-11-07	Vertical field effect transistor
EP0042552A3 (en)	1982-05-05	Mos device
GB2106711B (en)	1985-03-13	Field effect transistor
JPS54114188A (en)	1979-09-06	Field effect transistor
EP0091831A3 (en)	1986-02-12	Mobility-modulation field effect transistor
JPS5580359A (en)	1980-06-17	Field effect transistor
GB2077494B (en)	1984-10-03	Mos transistor
DE3273867D1 (en)	1986-11-20	Field effect transistor
JPS57104268A (en)	1982-06-29	Field effect transistor
JPS5729025A (en)	1982-02-16	Gate unit
GB2085656B (en)	1985-05-01	Field effect transistor
DE3174485D1 (en)	1986-05-28	Field effect transistors
GB2080644B (en)	1984-08-15	Transistor circuits
GB2088939B (en)	1984-03-21	Gate
JPS567481A (en)	1981-01-26	Field effect type transistor
GB2030769B (en)	1983-03-02	Field effect transistor
DE3175010D1 (en)	1986-09-04	Field effect transistor
JPS57192081A (en)	1982-11-26	Field effect transistor unit
GB8322625D0 (en)	1983-09-28	Field effect transistor
JPS56147477A (en)	1981-11-16	Semiconductor transistor
JPS56147506A (en)	1981-11-16	Field effect transistor circuit
GB2070858B (en)	1985-02-06	Shallow channel field effect transistor
JPS57204172A (en)	1982-12-14	Field effect transistor

Legal Events

Date	Code	Title	Description
1987-05-14	8363	Opposition against the patent
1989-08-17	8331	Complete revocation