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DE3160184D1 - Light emitting and receiving transistor for half-duplex telecommunication by an optical fibre - Google Patents

Light emitting and receiving transistor for half-duplex telecommunication by an optical fibre

Info

Publication number
DE3160184D1
DE3160184D1 DE8181401533T DE3160184T DE3160184D1 DE 3160184 D1 DE3160184 D1 DE 3160184D1 DE 8181401533 T DE8181401533 T DE 8181401533T DE 3160184 T DE3160184 T DE 3160184T DE 3160184 D1 DE3160184 D1 DE 3160184D1
Authority
DE
Germany
Prior art keywords
light emitting
optical fibre
receiving transistor
duplex telecommunication
duplex
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
DE8181401533T
Other languages
English (en)
Inventor
Pierre Poulain
Cremoux Baudouin De
Pierre Hirtz
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Thales SA
Original Assignee
Thomson CSF SA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Thomson CSF SA filed Critical Thomson CSF SA
Application granted granted Critical
Publication of DE3160184D1 publication Critical patent/DE3160184D1/de
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
    • H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
    • H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
    • H01L31/11—Devices sensitive to infrared, visible or ultraviolet radiation characterised by two potential barriers, e.g. bipolar phototransistors
    • H01L31/1105—Devices sensitive to infrared, visible or ultraviolet radiation characterised by two potential barriers, e.g. bipolar phototransistors the device being a bipolar phototransistor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/12—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof structurally associated with, e.g. formed in or on a common substrate with, one or more electric light sources, e.g. electroluminescent light sources, and electrically or optically coupled thereto
    • H01L31/125—Composite devices with photosensitive elements and electroluminescent elements within one single body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/0004—Devices characterised by their operation
    • H01L33/0008—Devices characterised by their operation having p-n or hi-lo junctions
    • H01L33/0016—Devices characterised by their operation having p-n or hi-lo junctions having at least two p-n junctions

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Chemical & Material Sciences (AREA)
  • Composite Materials (AREA)
  • Led Devices (AREA)
  • Light Receiving Elements (AREA)
  • Led Device Packages (AREA)
DE8181401533T 1980-10-28 1981-10-02 Light emitting and receiving transistor for half-duplex telecommunication by an optical fibre Expired DE3160184D1 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR8023015A FR2493047A1 (fr) 1980-10-28 1980-10-28 Transistor emetteur-recepteur de lumiere pour telecommunications a l'alternat sur fibre optique

Publications (1)

Publication Number Publication Date
DE3160184D1 true DE3160184D1 (en) 1983-05-19

Family

ID=9247398

Family Applications (1)

Application Number Title Priority Date Filing Date
DE8181401533T Expired DE3160184D1 (en) 1980-10-28 1981-10-02 Light emitting and receiving transistor for half-duplex telecommunication by an optical fibre

Country Status (5)

Country Link
US (1) US4485391A (de)
EP (1) EP0051505B1 (de)
JP (1) JPS57102082A (de)
DE (1) DE3160184D1 (de)
FR (1) FR2493047A1 (de)

Families Citing this family (27)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3337492A1 (de) * 1983-10-13 1985-04-25 Heinrich-Hertz-Institut für Nachrichtentechnik Berlin GmbH, 1000 Berlin Elektro-optisches halbleiter-bauelement mit einer lichtwellen fuehrenden schicht und seine verwendung als elektro-optischer modulator
JPH0758774B2 (ja) * 1984-10-26 1995-06-21 工業技術院長 半導体装置
US4732446A (en) * 1985-10-02 1988-03-22 Lamar Gipson Electrical circuit and optical data buss
US4845052A (en) * 1986-02-07 1989-07-04 Harris Corporation Method of packaging a non-contact I/O signal transmission integrated circuit
US4912525A (en) * 1986-09-17 1990-03-27 Universal Photonix, Inc. Apparatus for transmitting optical signals into a protected environment
US4761680A (en) * 1986-09-29 1988-08-02 General Electric Company Photodetector
DE3732626A1 (de) * 1987-09-28 1989-04-06 Siemens Ag Photo-lasertransistor
US4821082A (en) * 1987-10-30 1989-04-11 International Business Machines Corporation Heterojunction bipolar transistor with substantially aligned energy levels
US4964693A (en) * 1989-03-28 1990-10-23 Motorola, Inc. Radio having optical controls and method of optically controlling same
US5173795A (en) * 1989-03-28 1992-12-22 Motorola, Inc. Optically controlled radio
JPH0397267A (ja) * 1989-09-11 1991-04-23 Mitsubishi Electric Corp ヘテロ接合アバランシェトランジスタ
US5541704A (en) * 1994-08-08 1996-07-30 Eastman Kodak Company Camera with LED photometer
FR2724769B1 (fr) * 1994-09-16 1996-12-06 Thomson Csf Procede de realisation de diodes laser a emission surfacique
US6784463B2 (en) 1997-06-03 2004-08-31 Lumileds Lighting U.S., Llc III-Phospide and III-Arsenide flip chip light-emitting devices
US6229160B1 (en) 1997-06-03 2001-05-08 Lumileds Lighting, U.S., Llc Light extraction from a semiconductor light-emitting device via chip shaping
US20050040432A1 (en) * 2003-08-22 2005-02-24 The Board Of Trustees Of The University Of Illinois Light emitting device and method
US7998807B2 (en) * 2003-08-22 2011-08-16 The Board Of Trustees Of The University Of Illinois Method for increasing the speed of a light emitting biopolar transistor device
US7286583B2 (en) * 2003-08-22 2007-10-23 The Board Of Trustees Of The University Of Illinois Semiconductor laser devices and methods
US7354780B2 (en) * 2003-08-22 2008-04-08 The Board Of Trustees Of The University Of Illinois Semiconductor light emitting devices and methods
US7696536B1 (en) * 2003-08-22 2010-04-13 The Board Of Trustees Of The University Of Illinois Semiconductor method and device
US7091082B2 (en) 2003-08-22 2006-08-15 The Board Of Trustees Of The University Of Illinois Semiconductor method and device
US7859071B2 (en) * 2005-03-31 2010-12-28 Finisar Corporation Power and communication interface for sensors using a single tethered fiber
US8154414B2 (en) * 2005-03-31 2012-04-10 Finisar Corporation Systems and methods for collecting data with sensors
US7535034B2 (en) * 2006-02-27 2009-05-19 The Board Of Trustees Of The University Of Illinois PNP light emitting transistor and method
US7711015B2 (en) * 2007-04-02 2010-05-04 The Board Of Trustees Of The University Of Illinois Method for controlling operation of light emitting transistors and laser transistors
DE102016202386B3 (de) * 2016-02-17 2017-08-10 Siemens Aktiengesellschaft Spannungswandler mit einer Strommessvorrichtung
GB2569994B (en) * 2018-01-08 2020-07-15 Leonardo Mw Ltd A dual band photodiode element and method of making the same

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5229334A (en) * 1975-08-28 1977-03-05 Mabuchi Motor Co Ltd Battery-operated model toy equipped with radio control
JPS53116792A (en) * 1977-03-23 1978-10-12 Toshiba Corp Semiconductor light emitting-photo detecting composite device
JPS5448493A (en) * 1977-03-23 1979-04-17 Toshiba Corp Semiconductor optical device
FR2406896A1 (fr) * 1977-10-18 1979-05-18 Thomson Csf Diode emettrice et receptrice en lumiere notamment pour telecommunications optiques
US4213138A (en) * 1978-12-14 1980-07-15 Bell Telephone Laboratories, Incorporated Demultiplexing photodetector
JPS5598880A (en) * 1979-01-20 1980-07-28 Nec Corp Light transmitting/receiving semiconductor device
US4388633A (en) * 1980-09-29 1983-06-14 Hughes Aircraft Company Monolithic transistor coupled electroluminescent diode

Also Published As

Publication number Publication date
JPS57102082A (en) 1982-06-24
EP0051505B1 (de) 1983-04-13
EP0051505A1 (de) 1982-05-12
FR2493047A1 (fr) 1982-04-30
US4485391A (en) 1984-11-27
FR2493047B1 (de) 1982-11-26

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Legal Events

Date Code Title Description
8339 Ceased/non-payment of the annual fee