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DE2966176D1 - Article comprising a substrate and an overlying processing layer of actinic radiation-sensitive material and process for fabrication of the article - Google Patents

Article comprising a substrate and an overlying processing layer of actinic radiation-sensitive material and process for fabrication of the article

Info

Publication number
DE2966176D1
DE2966176D1 DE7979101529T DE2966176T DE2966176D1 DE 2966176 D1 DE2966176 D1 DE 2966176D1 DE 7979101529 T DE7979101529 T DE 7979101529T DE 2966176 T DE2966176 T DE 2966176T DE 2966176 D1 DE2966176 D1 DE 2966176D1
Authority
DE
Germany
Prior art keywords
article
fabrication
substrate
sensitive material
actinic radiation
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
DE7979101529T
Other languages
English (en)
Inventor
Murrae John Stanley Bowden
Larry Flack Thompson
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
AT&T Corp
Original Assignee
Western Electric Co Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Family has litigation
First worldwide family litigation filed litigation Critical https://patents.darts-ip.com/?family=25424783&utm_source=google_patent&utm_medium=platform_link&utm_campaign=public_patent_search&patent=DE2966176(D1) "Global patent litigation dataset” by Darts-ip is licensed under a Creative Commons Attribution 4.0 International License.
Application filed by Western Electric Co Inc filed Critical Western Electric Co Inc
Application granted granted Critical
Publication of DE2966176D1 publication Critical patent/DE2966176D1/de
Expired legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S430/00—Radiation imagery chemistry: process, composition, or product thereof
    • Y10S430/143—Electron beam

Landscapes

  • Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • General Physics & Mathematics (AREA)
  • Materials For Photolithography (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
DE7979101529T 1978-05-22 1979-05-21 Article comprising a substrate and an overlying processing layer of actinic radiation-sensitive material and process for fabrication of the article Expired DE2966176D1 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US05/907,873 US4289845A (en) 1978-05-22 1978-05-22 Fabrication based on radiation sensitive resists and related products

Publications (1)

Publication Number Publication Date
DE2966176D1 true DE2966176D1 (en) 1983-10-27

Family

ID=25424783

Family Applications (1)

Application Number Title Priority Date Filing Date
DE7979101529T Expired DE2966176D1 (en) 1978-05-22 1979-05-21 Article comprising a substrate and an overlying processing layer of actinic radiation-sensitive material and process for fabrication of the article

Country Status (7)

Country Link
US (1) US4289845A (de)
EP (1) EP0005775B1 (de)
JP (1) JPS54153578A (de)
AU (1) AU523409B2 (de)
CA (1) CA1140794A (de)
DE (1) DE2966176D1 (de)
ES (1) ES480801A1 (de)

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JPS56162744A (en) * 1980-05-19 1981-12-14 Hitachi Ltd Formation of fine pattern
US4476216A (en) * 1981-08-03 1984-10-09 Amdahl Corporation Method for high resolution lithography
JPS5852638A (ja) * 1981-09-24 1983-03-28 Hitachi Ltd 放射線感応性組成物
US4396702A (en) * 1981-11-10 1983-08-02 Rca Corporation Method of forming pattern in positive resist media
US4357369A (en) * 1981-11-10 1982-11-02 Rca Corporation Method of plasma etching a substrate
JPS59152A (ja) * 1982-06-25 1984-01-05 Hitachi Chem Co Ltd 画像形成性樹脂組成物
US4497891A (en) * 1983-10-25 1985-02-05 International Business Machines Corporation Dry-developed, negative working electron resist system
DE3409888A1 (de) * 1984-03-17 1985-09-19 Hoechst Ag, 6230 Frankfurt Lichtempfindliches aufzeichnungsmaterial und dessen verwendung in einem verfahren zum herstellen einer druckform oder einer gedruckten schaltung
EP0157262B1 (de) * 1984-03-19 1988-06-08 Nippon Oil Co. Ltd. Elektronenstrahlenempfindliche Materialien
JPS6180246A (ja) * 1984-09-28 1986-04-23 Nec Corp ポジレジスト材料
US4730903A (en) * 1985-01-23 1988-03-15 Semiconductor Energy Laboratory Co., Ltd. Ferroelectric crystal display panel and manufacturing method thereof
US4897336A (en) * 1986-04-11 1990-01-30 Chien James C W Self-developing radiation sensitive resist with amorphous polymer having haloalkyl substitution derived from cycic ether
DE3821585A1 (de) * 1987-09-13 1989-03-23 Hoechst Ag Positiv arbeitendes strahlungsempfindliches gemisch und daraus hergestelltes strahlungsempfindliches aufzeichnungsmaterial fuer hochenergetische strahlung
US4835086A (en) * 1988-02-12 1989-05-30 Hoechst Celanese Corporation Polysulfone barrier layer for bi-level photoresists
DE3821584A1 (de) * 1988-06-25 1989-12-28 Hoechst Ag Strahlungshaertbares gemisch und daraus hergestelltes strahlungsempfindliches aufzeichungsmaterial fuer hochenergetische strahlung
DE3907953A1 (de) * 1989-03-11 1990-09-13 Hoechst Ag Strahlungshaertbares gemisch und daraus hergestelltes strahlungsempfindliches aufzeichnungsmaterial fuer hochenergetische strahlung
DE3907954A1 (de) * 1989-03-11 1990-09-13 Hoechst Ag Positiv arbeitendes strahlungsempfindliches gemisch und daraus hergestelltes strahlungsempfindliches aufzeichnungsmaterial fuer hochenergetische strahlung
US5204226A (en) * 1991-03-04 1993-04-20 International Business Machines Corporation Photosensitizers for polysilanes
US5298367A (en) * 1991-03-09 1994-03-29 Basf Aktiengesellschaft Production of micromoldings having a high aspect ratio
US5262392A (en) * 1991-07-15 1993-11-16 Eastman Kodak Company Method for patterning metallo-organic percursor film and method for producing a patterned ceramic film and film products
US5372912A (en) * 1992-12-31 1994-12-13 International Business Machines Corporation Radiation-sensitive resist composition and process for its use
EP0698825A1 (de) 1994-07-29 1996-02-28 AT&T Corp. Energieempfindlicher Resist und Verfahren zur Herstellung eines Geräts mit diesem Resist
US6576547B2 (en) 1998-03-05 2003-06-10 Micron Technology, Inc. Residue-free contact openings and methods for fabricating same
US6436605B1 (en) 1999-07-12 2002-08-20 International Business Machines Corporation Plasma resistant composition and use thereof
US6410453B1 (en) * 1999-09-02 2002-06-25 Micron Technology, Inc. Method of processing a substrate
PL377865A1 (pl) * 2003-02-05 2006-02-20 Dow Global Technologies Inc. Polimery z monomerów winyloaromatycznych modyfikowane kauczukiem
US7765675B2 (en) * 2005-09-01 2010-08-03 Hitachi Global Storage Technologies Netherlands B.V. CPP read sensors having constrained current paths made of lithographically-defined conductive vias and methods of making the same
US7550249B2 (en) * 2006-03-10 2009-06-23 Az Electronic Materials Usa Corp. Base soluble polymers for photoresist compositions
US7704670B2 (en) * 2006-06-22 2010-04-27 Az Electronic Materials Usa Corp. High silicon-content thin film thermosets
US7759046B2 (en) * 2006-12-20 2010-07-20 Az Electronic Materials Usa Corp. Antireflective coating compositions
US8026040B2 (en) 2007-02-20 2011-09-27 Az Electronic Materials Usa Corp. Silicone coating composition
EP2121808A1 (de) * 2007-02-27 2009-11-25 AZ Electronic Materials USA Corp. Auf silicium basierende antireflexionsbeschichtungszusammensetzungen
US9017934B2 (en) 2013-03-08 2015-04-28 Taiwan Semiconductor Manufacturing Company, Ltd. Photoresist defect reduction system and method
US9354521B2 (en) 2013-03-12 2016-05-31 Taiwan Semiconductor Manufacturing Company, Ltd. Photoresist system and method
US9502231B2 (en) 2013-03-12 2016-11-22 Taiwan Semiconductor Manufacturing Company, Ltd. Photoresist layer and method
US9110376B2 (en) 2013-03-12 2015-08-18 Taiwan Semiconductor Manufacturing Company, Ltd. Photoresist system and method
US9175173B2 (en) 2013-03-12 2015-11-03 Taiwan Semiconductor Manufacturing Company, Ltd. Unlocking layer and method
US8932799B2 (en) 2013-03-12 2015-01-13 Taiwan Semiconductor Manufacturing Company, Ltd. Photoresist system and method
US9245751B2 (en) 2013-03-12 2016-01-26 Taiwan Semiconductor Manufacturing Company, Ltd. Anti-reflective layer and method
US9543147B2 (en) 2013-03-12 2017-01-10 Taiwan Semiconductor Manufacturing Company, Ltd. Photoresist and method of manufacture
US9256128B2 (en) 2013-03-12 2016-02-09 Taiwan Semiconductor Manufacturing Company, Ltd. Method for manufacturing semiconductor device
US9117881B2 (en) 2013-03-15 2015-08-25 Taiwan Semiconductor Manufacturing Company, Ltd. Conductive line system and process
US9341945B2 (en) 2013-08-22 2016-05-17 Taiwan Semiconductor Manufacturing Company, Ltd. Photoresist and method of formation and use
US10036953B2 (en) 2013-11-08 2018-07-31 Taiwan Semiconductor Manufacturing Company Photoresist system and method
US10095113B2 (en) 2013-12-06 2018-10-09 Taiwan Semiconductor Manufacturing Company Photoresist and method
US9761449B2 (en) 2013-12-30 2017-09-12 Taiwan Semiconductor Manufacturing Company, Ltd. Gap filling materials and methods
US9599896B2 (en) 2014-03-14 2017-03-21 Taiwan Semiconductor Manufacturing Company, Ltd. Photoresist system and method
US9581908B2 (en) 2014-05-16 2017-02-28 Taiwan Semiconductor Manufacturing Company, Ltd. Photoresist and method
US11060416B2 (en) 2019-01-31 2021-07-13 Transportation Ip Holdings, Llc Systems for a turbocharger

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Publication number Priority date Publication date Assignee Title
BE594253A (de) * 1959-08-19
BE605776A (de) * 1960-09-26
US3255006A (en) * 1963-03-04 1966-06-07 Purex Corp Ltd Photosensitive masking for chemical etching
US3657177A (en) * 1970-06-25 1972-04-18 Du Pont Wire enamel of an aromatic polysulfone resin and a heat reactive condensate
US3666473A (en) * 1970-10-06 1972-05-30 Ibm Positive photoresists for projection exposure
US3936557A (en) * 1971-05-18 1976-02-03 American Can Company Epoxide blend for polymerizable coating compositions and process
SE391405B (sv) * 1972-05-01 1977-02-14 Western Electric Co Forfarande for astadkommande av resistmonster pa ett substrat
US3950173A (en) * 1973-02-12 1976-04-13 Rca Corporation Electron beam recording article with o-quinone diazide compound
US3852771A (en) * 1973-02-12 1974-12-03 Rca Corp Electron beam recording process
US3893127A (en) * 1973-09-27 1975-07-01 Rca Corp Electron beam recording media
US3996393A (en) * 1974-03-25 1976-12-07 International Business Machines Corporation Positive polymeric electron beam resists of very great sensitivity
US3963491A (en) * 1974-06-27 1976-06-15 Xerox Corporation Imaging method
US3916036A (en) * 1974-09-26 1975-10-28 Ibm Sensitized decomposition of polysulfone resists
US4011351A (en) * 1975-01-29 1977-03-08 International Business Machines Corporation Preparation of resist image with methacrylate polymers
US4005437A (en) * 1975-04-18 1977-01-25 Rca Corporation Method of recording information in which the electron beam sensitive material contains 4,4'-bis(3-diazo-3-4-oxo-1-naphthalene sulfonyloxy)benzil
US4103064A (en) * 1976-01-09 1978-07-25 Dios, Inc. Microdevice substrate and method for making micropattern devices
US4153741A (en) * 1976-07-30 1979-05-08 Rca Corporation Method for forming a surface relief pattern in a poly(olefin sulfone) layer
US4045318A (en) * 1976-07-30 1977-08-30 Rca Corporation Method of transferring a surface relief pattern from a poly(olefin sulfone) layer to a metal layer
US4097618A (en) * 1977-03-09 1978-06-27 Rca Corporation Method of transferring a surface relief pattern from a poly(1-methyl-1-cyclopropene sulfone) layer to a non-metallic inorganic layer

Also Published As

Publication number Publication date
AU4709679A (en) 1979-11-29
EP0005775A1 (de) 1979-12-12
ES480801A1 (es) 1980-01-16
US4289845A (en) 1981-09-15
AU523409B2 (en) 1982-07-29
CA1140794A (en) 1983-02-08
JPS54153578A (en) 1979-12-03
EP0005775B1 (de) 1983-09-21

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Legal Events

Date Code Title Description
8331 Complete revocation