DE202013012571U1 - Manufacturing plant for the production of a photovoltaic module and photovoltaic module - Google Patents

Abstract

Photovoltaic module, produced by a method comprising the steps of: - providing a layer stack (101) with a first electrically conductive layer (102), an absorber (103) and a second electrically conductive layer (104) on a substrate (105), and subsequently Cutting the first layer (102), the absorber (103) and the second layer (104) and thereby forming a first trench (106), - severing the second layer (104) and the absorber (103) and thereby forming a second trench (107), - again severing at least the second layer (104) and thereby forming a third trench (108) such that the second trench (107) is arranged between the first (106) and the third (108) trench, - Filling the first trench (106) with an electrically insulating material (109), - Overwriting the filled-in first trench (106) and filling the second trench (108) with an electrically conductive Materia l (110) for electrically contacting the second layer (104) and the first layer (102).

Description

The invention further relates to a photovoltaic module having a plurality of electrically connected in series segments. The invention further relates to a manufacturing plant for producing a photovoltaic module.

Photovoltaic modules can be designed as so-called crystalline photovoltaic modules. The monocrystalline photovoltaic cells used for this purpose, for example, are produced from monocrystalline silicon wafers. Polycrystalline photovoltaic cells consist of disks that do not all have the same crystal orientation. They can be produced by casting. Quasicrystalline photovoltaic cells have mono- and polycrystalline regions.

Thin-film solar cell modules, also called thin-film photovoltaic modules, have photoactive layers with layer thicknesses in the order of micrometers. The semiconductor material used in the photoactive layer or layers may be amorphous or microcrystalline. A combination of layers of amorphous and layers of microcrystalline semiconductor material within a cell is also possible, for example in the so-called tandem cells and the so-called triple cells. The semiconductor materials used are Si, Ge and compound semiconductors such as CdTe or Cu (In, Ga) Se2 (abbreviated CIS or CIGS) and polymers.

In so-called crystalline thin-film photovoltaic modules, first of all a large amount of a semiconductor material, for example silicon, is deposited on a substrate, for example by evaporation, CVD or another deposition method. The semiconductor material is then recrystallized. This happens for example by means of laser or thermally. The layer thicknesses are for example in the range of 3 to 50 μm.

In order to be able to use economic modules with the largest possible area without the current dissipated laterally in the electrodes of the solar cells becoming so large that high ohmic losses occur, thin-film photovoltaic modules are usually divided into a plurality of segments. The strip-shaped and usually a few millimeters to centimeters wide segments usually run parallel to an edge of the module. The segments are formed by individual layers of the layer structure of the solar cell are interrupted by thin dividing lines in continuous substrate. On the one hand, the separating lines lead to the fact that identical layers of adjacent segments are electrically insulated from one another and, on the other hand, that subsequently applied layers can be electrically connected along a contact with underlying layers. With a suitable arrangement of the separating lines can be achieved in this way a series connection of the individual segments. No electrical current is generated in the area of the dividing lines. In the case of crystalline thin-film photovoltaic modules, for example, the series connection is carried out in a manner comparable to thin-film photovoltaic modules. It is possible that instead of a separate front-side contact layer, a highly doped region of the absorber serves as an electrically conductive layer for current transport. It is also possible for crystalline thin-film photovoltaic modules to be contacted only from the rear side. At first an emitter is produced. The emitter and exposed base areas are alternately contacted. There is no series connection here and the voltage remains the same. This contacting is produced for example by laser radiation and printing techniques. According to further embodiments, a series connection of emitter-to-base is made comparable to the series connection in the case of thin-film photovoltaic modules, except that the first conductive layer is not exposed and the complete interconnection takes place from the rear.

It is desirable to provide a photovoltaic module that is efficient. It is desirable to provide a manufacturing facility that enables simple and effective production of photovoltaic modules.

A method of manufacturing a photovoltaic module is described, as well as a manufacturing plant suitable for carrying out the method.

In accordance with at least one embodiment of the invention, a layer stack is provided on a substrate for producing a photovoltaic module. The layer stack has a first electrically conductive layer, an absorber and a second conductive layer. The first layer, the absorber and the second layer are severed to form a first trench. The second layer and the absorber are severed to form a second trench. In particular, the second trench is spaced from the first trench. At least the second conductive layer is severed again, thereby forming a third trench. The second trench is arranged between the first and the third trench. The first trench is filled with an electrically insulating material. The filled-in first trench is overwritten with an electrically conductive material. The second trench is filled with the electrically conductive material. By the electrically conductive material, which bridges the first trench and the second trench fills up, the second layer and the first layer are electrically contacted with each other.

By forming the trenches, segments of the photovoltaic module are formed. In particular, the first layers of adjacent segments are insulated from one another by forming the first trench. In particular, the second layers of adjacent segments are electrically insulated from one another by the formation of the third trench. By means of the electrically conductive material in the second trench, the first layer and the second layer of adjacent segments are electrically connected to one another. Thus, the adjacent segments are electrically connected in series.

According to embodiments, the trenches are spaced from one another. According to further embodiments, the trenches adjoin one another directly, in particular firstly the first and the third trench are formed adjacent to one another. Subsequently, for example, the first and third trenches are filled with the electrically insulating material and the second trench is inserted next to the first trench in the electrically insulating material to expose the first electrically conductive layer in the region of the second trench.

The formation of the first trench and the subsequent filling with the insulating material allow a reliable formation of the insulation of the first layer, so that there can be no short circuits in the first layer between adjacent segments. By forming the third trench spaced from the second trench, reliable isolation of the second layers from adjacent segments is possible. When applying the electrically conductive material thus greater tolerances can be allowed and at the same time shorts are reliably avoided in the second layer.

According to embodiments, to form the third trench, the second layer and the absorber are severed. Thus, the same process parameters can be used to form the second and third trenches. For example, all three trenches are formed by laser beaming. According to further embodiments, a mechanical structuring is possible in which the three trenches are each formed by scratching. According to other embodiments, structuring by etching is possible, in which the three trenches are each formed by printing on etching inks. For example, an ink based on potassium hydroxide is printed. In particular, the etching ink selectively etches the layer stack in such a way that the etching removes predetermined layers and stops at a predetermined layer. It is also possible a combination of mechanical structuring, laser structuring and / or etching or another layer removal method.

According to embodiments, the electrically insulating material is introduced into the first trench by means of an inkjet printing process. For example, electrically insulating ink or a polymer is printed in the first trench. According to further embodiments, the electrically conductive material is applied by an inkjet printing process. The electrically conductive material comprises in particular a silver-containing ink. According to further embodiments, another electrically conductive material is printed, for example aluminum or copper. The electrically insulating material and / or the electrically conductive material are applied according to further embodiments by means of a screen printing method or another method for structured application.

According to further embodiments, a plurality of conductive regions are formed, which are arranged spaced apart along the first trench. The conductive regions each comprise the conductive material for electrical contacting of the second layer and the first layer. The second layer is free of the electrically insulating material in further regions between the line regions. The electrical contact between the second layer and the first layer is thus only partially. Thus, it is possible to save conductive material. In addition, based on the photovoltaic module requires less surface for contacting. If the module size remains the same, the efficiency of the photovoltaic module is thus increased.

According to further embodiments, a plurality of isolation regions are formed, which are spaced apart along the first trench. The isolation regions each include the electrically insulating material. The first trench is free of the electrically insulating material in a wider area. The isolation areas correspond to the line areas. Thus, electrically insulating material can be saved and yet a reliable insulation of the first layer can be realized. Only in the areas in which the electrically conductive material is applied, the electrically insulating material is introduced into the first trench.

In other embodiments, the filled-in first trench is overwritten with the conductive material such that a surface of the conductive material has a predetermined roughness to scatter radiation incident during operation. Due to the internal reflection of the incident radiation at the highly reflective conductive Material is the radiation from the contacting region of the trenches reflected in the segments. Thus, it is possible to at least partially convert this radiation into electrical energy. Due to the predetermined roughness, which is predetermined for example by suitable deposition conditions, the proportion of radiation is increased, which is converted into electrical energy. Thus, the efficiency of the photovoltaic module is increased.

According to further embodiments, the conductive material is applied such that a major part of an absorber-facing surface of the second layer is covered by the conductive material. An area adjacent to the third trench remains free of the conductive material. This is particularly useful when the conductive material is applied in the spaced line regions. By covering almost the entire surface of the second layer with the electrically conductive layer, the conductivity of the second layer is increased. Thus, it is possible to make the individual segments wider than conventional. This means fewer contacting areas and thus a higher efficiency.

According to further embodiments, the layer stack is provided with the first electrically conductive layer and the absorber without the second electrically conductive layer.

Subsequently, the first layer and the absorber are severed, thereby forming the first trench. The absorber is severed, thereby forming the second trench. In particular, the second trench is spaced from the first trench. The first trench is filled with the electrically insulating material. A side of the absorber facing away from the first electrically conductive layer is printed with a second electrically conductive layer of the conductive material so that the filled-in first trench is overwritten and the second trench is filled up with the electrically conductive material and a third trench is freed in the second layer remains of the electrically conductive material, wherein the second trench between the first trench and the third trench is arranged.

According to a further aspect, the invention relates to a photovoltaic module with a plurality of electrically connected in series segments. The photovoltaic module is produced in particular by a method according to the application.

According to embodiments, the photovoltaic module comprises a layer stack arranged on a substrate. The layer stack has a first electrically conductive layer, a photoactive absorber and a second electrically conductive layer. A first trench interrupts the absorber and the first electrically conductive layer. In the first trench an electrically insulating material is arranged. A second trench interrupts the absorber. A third trench interrupts at least the second conductive layer. The first, the second and the third trench are in particular each spaced from each other. The photovoltaic module has a contact. The contact electrically couples the second layer to the first layer for series connection of the segments. The contacting is applied on a side of the absorber remote from the first conductive layer for electrical bridging of the first trench. The contacting is electrically coupled in the second trench to the first layer. The contacting is in the second trench in contact with the first layer.

According to embodiments, the contacting is formed directly by parts of the second electrically conductive layer. On a separately formed to the second electrically conductive layer contacting is particularly omitted. The contacting is applied to the surface of the absorber facing away from the first conductive layer.

According to further embodiments, the contacting and the second electrically conductive layer are formed separately from one another. In particular, the second electrically conductive layer is applied to the surface of the absorber facing away from the first conductive layer and in each case penetrated by the first, the second and the third trench. The contacting is arranged on the surface of the second layer facing away from the absorber.

According to embodiments, the contacting has a predetermined roughness on a surface facing away from the absorber, in order to scatter radiation arriving during operation. Thus, a large part of the incoming radiation is converted into electrical energy. The photovoltaic module is efficient.

According to embodiments, the contacting is formed in a plurality of spaced-apart line regions along the first trench, and in particular the electrically insulating material is arranged in the first trench only in the line regions. As a result, the photovoltaic module is inexpensive to produce and efficient in operation.

The manufacturing facility according to further aspects of the invention is configured according to embodiments for producing a photovoltaic module having a plurality of segments by structuring a large-area photovoltaic cell in FIG the plurality of segments and by metallizing for series connection of the segments.

According to further embodiments, the manufacturing plant is designed for structuring and interconnecting crystalline photovoltaic cells by a sequence of structuring steps and metallization steps without the production of a series connection. The photovoltaic cells are then rather functional and electrically contactable for processing to the photovoltaic module.

The described advantages of the manufacturing process apply mutatis mutandis to the manufacturing plant and / or the photovoltaic module and vice versa.

Further advantages, features and developments emerge from the examples explained below in connection with the figures. In the figures, the same or equivalent components may each be provided with the same reference numerals. The illustrated elements and their proportions to each other are not to be considered as true to scale. Rather, individual elements such as layers, structures, regions and components for exaggerated representability and / or better understanding can be shown exaggerated thick or large dimensions.

Show it:

1 a schematic representation of a photovoltaic module according to embodiments,

2 a schematic representation of a photovoltaic module according to embodiments,

3 a schematic representation of a cross section of a photovoltaic module according to embodiments,

4 a schematic representation of a cross section of a photovoltaic module according to embodiments,

5 a schematic representation of a cross section of a photovoltaic module according to embodiments,

6 a schematic representation of a cross section of a photovoltaic module according to embodiments,

7 a schematic representation of a cross section of a photovoltaic module according to embodiments,

8th a schematic representation of a cross section of a photovoltaic module according to embodiments,

9A to 9C schematic representations of a cross section of a photovoltaic module at various steps during manufacture according to embodiments,

10 a schematic representation of a manufacturing plant according to embodiments, and

11 a schematic representation of a manufacturing plant according to embodiments.

1 schematically shows a photovoltaic module 100 in supervision. The photovoltaic module 100 is set up to convert radiant energy into electrical energy when ready for use. According to embodiments, the photovoltaic module is 100 of the type of a thin-film photovoltaic module. According to further embodiments, the photovoltaic module is 100 of the type of crystalline thin-film photovoltaic module.

The photovoltaic module 100 has a plurality of segments 120 . 122 on that on a common substrate 105 ( 2 to 7 ) are arranged. Each immediately juxtaposed segments are through a contacting area 121 separated from each other. For example, between the segments 120 and 122 the contacting area 121 arranged. In the embodiments according to 1 runs the contact area 121 similar along the entire module 100 ,

According to further embodiments, as shown schematically in FIG 2 are shown, the contacting areas 121 only in spaced line areas 112 educated. A dividing line, for example in the form of a trench 106 , runs along the entire module 100 for the formation of the segments 120 and 121 , Only in the line areas 112 are the neighboring segments 120 and 122 electrically coupled together to the series connection of the adjacent segments 120 and 122 to realize. In the other areas 113 between the pipe sections 112 are the neighboring segments 120 and 122 electrically not connected to each other. According to embodiments, isolation regions are 114 provided with the line areas 112 correspond. In the fields of 115 between the isolation areas is the trench 106 according to embodiments, free of insulating material. For example, the line regions are approximately 50 μm wide and arranged at a distance of approximately 200 μm from one another.

3 shows a schematic representation of a cross section through the photovoltaic module 100 During manufacture.

Transverse to the flat main propagation direction of the photovoltaic module 100 is on the substrate 105 a layer stack 101 arranged. A first electrically conductive layer 102 of the shift stack 101 is the substrate 105 facing. A second electrically conductive layer 104 of the shift stack 101 is the substrate 105 away. Between the first shift 102 and the second layer 104 is a photoactive absorber 103 arranged.

According to embodiments, the first conductive layer 102 In operation, facing the sun, so that the radiation through the substrate 105 on the layer stack 101 meets. According to further embodiments, the substrate is 105 turned away from the sun during operation, leaving the second layer 104 facing the sun during operation.

For example, that layer of the electrically conductive layers 102 and 104 , which faces the incident radiation in operation, transparent, for example, a TCO (TCO = Transparent Conductive Oxide Layers; Transparent conductive oxide layer). The layer which is arranged facing away from the incident radiation is in particular metallic and, for example, reflective.

The absorber 103 comprises, for example, a layer sequence with typically at least one p- and one n-doped semiconductor layer. In the case of silicon-based thin film solar cells, the p- and n-doped layers are usually separated by an extended substantially intrinsic (ie undoped) layer (i-layer).

For better utilization of the wavelength spectrum, several pin layer sequences with different absorption spectra can be stacked in the absorber 103 be provided. Such a tandem cell has, for example, a pin layer sequence of amorphous silicon and a pin layer sequence of microcrystalline silicon. It is also possible to provide a further pin layer sequence of amorphous silicon germanium. In this case one speaks of triple cells.

Typically, in operation of the photovoltaic module, the p-doped layer faces the sun. It is also possible that the n-doped layer faces the sun. As a growth substrate 105 Glass or even a (metal) foil is used. The film is transparent according to embodiments. A cover element 125 ( 6 ), through which sunlight is incident during operation, is laminated to a module (metal foil) only at the end of the manufacturing process. The layer stack remains with the growth substrate 105 connected.

As active semiconductor material for the absorber 103 For example, amorphous or microcrystalline Group IV semiconductors, for example a-Si, a-SiGe, μC-Si, or compound semiconductors such as CdTe or Cu (In, Ga) Se2 (called CIS or Cigs for short) can be used. Furthermore, the absorber may comprise organic material configured to convert radiant energy into electrical energy. It can in the absorber 103 Also layers of different materials can be combined. Furthermore, in the absorber 103 partially reflecting layers (intermediate reflectors) of a conductive oxide and / or a conductive semiconductor layer may be provided.

In the contacting area 121 is a first ditch 106 educated. The first ditch 106 is in the stacking direction of the layer stack 101 through the entire layer stack 101 formed through. The first ditch 106 breaks through the layer stack 101 starting at an absorber 103 remote surface 118 the second layer 104 to the substrate 105 , Through the ditch 106 is in particular the first layer 102 of the segment 120 electrically from the first layer 102 of the second segment 122 isolated.

In the contact area 121 is a second ditch 107 brought in. The second ditch 107 cuts through the second layer 104 and the absorber 103 , The second ditch 107 goes to the first layer 102 so the first layer 102 in the area of the ditch 107 remains electrically conductive. The second ditch 107 is spaced from the first trench 106 arranged. The second ditch 107 is between the first ditch 106 and a third ditch 108 arranged.

The third ditch 108 in particular, isolates the second layer 104 of the segment 120 from the second layer of the segment 122 electric. The third ditch 108 cuts through the second layer in the illustrated embodiments 104 and the absorber 103 , According to further embodiments, the third trench severed 108 only the second layer 104 and the absorber 103 remains in the area of the third trench 108 at least partially exist.

The first ditch 106 , the second ditch 107 and the third ditch 108 are especially in the layer stack 101 introduced after the first layer 102 , the absorber 103 and the second layer 104 consistently on the substrate 105 were separated. The first ditch 106 , the second ditch 107 and the third ditch 108 are in particular by laser radiation in the layer stack 101 brought in.

4 shows a schematic representation of the photovoltaic module 100 after the electrical series connection of the segments 120 and 122 ,

For electrical series connection of the segments 120 and 122 is first in the ditch 106 an electrically insulating material 109 brought in. For example, the electrically insulating material 109 along the entire ditch 106 introduced (compare 1 ). According to further embodiments, the electrically insulating material 109 only partially into the ditch 106 brought in ( 2 ). In particular, the electrically insulating material 109 only in the isolation areas 114 in the ditch 106 introduced and the areas 115 between the insulation areas are free of insulating material 109 , The electrically insulating material 109 In particular, it comprises an electrically insulating ink or an electrically insulating polymer. The electrically insulating material 109 is in particular a material that can be deposited by means of inkjet processes.

After the electrically insulating material 109 in the ditch 106 is introduced, is an electrically conductive material 110 in the contacting area 121 applied. The electrically conductive material 110 is applied so that an electrically conductive connection between the second layer 104 of the segment 120 and the first layer 102 of the segment 122 is trained.

The electrically conductive material 110 will be on the surface 118 on both sides of the ditch 106 Applied, so the ditch 106 and the electrically insulating material 109 is bridged. The electrically conductive material 110 is applied so that it is in the second trench 107 ranges and in particular completely replenishes it. By the electrically conductive material 110 There is an ohmic contact between the second electrically conductive layer 104 and the first electrically conductive layer 102 , The electrically conductive material 110 extends from the surface facing away from the substrate 118 up to the shift 102 , The drawn arrows in the layer stack 101 and the electrically conductive material 110 symbolize the current flow and the series connection of the segments 120 and 122 operational.

The electrically conductive material 110 in particular comprises Al, Ag, Cu or another electrically conductive material. The electrically conductive material 110 In particular, it comprises a material which can be deposited by means of an inkjet printing process.

In the area of the third trench 108 the current flows through the first layer 102 because the second layer 104 through the ditch 108 is electrically isolated. To the risk of a short circuit in the area of the third trench 108 the layer 104 Further, according to embodiments, it is an electrically insulating material 111 in the third ditch 108 intended. According to further embodiments is applied to the electrically insulating material 111 in the third ditch 108 waived. The electrically insulating material 111 is in particular separable by means of an ink jet printing process.

The second ditch 107 and the third ditch 108 According to embodiments under the same process conditions in the layer stack 101 brought in. Thus, the formation of the trenches 107 and 108 simplified. By completely filling the second trench 107 with the electrically conductive material 110 is a good ohmic contact between the electrically conductive material 110 and the first layer 102 guaranteed. The area of the absorber 103 and the second layer 104 between the second ditch 107 and the third ditch 108 serves as compensation for production-related tolerances in the application of the electrically conductive material 110 , By separately to the second trench 107 trained third ditch 108 is a sufficiently good electrical insulation of the second layer 104 ensured and short circuits in the second layer 104 can be prevented. This makes it possible to contact the area 121 between the adjacent segments 120 and 122 relatively thin form. Thus, the efficiency of the photovoltaic module becomes 100 elevated.

According to further embodiments, the trench 108 after application of the electrically conductive material 110 in the layer stack 101 brought in. This eliminates the possibility of conductive material during application of the electrically conductive material 110 in the ditch 108 can get. Thus, the possibility of an unintended short circuit is further reduced. This order is particularly suitable for photovoltaic modules in which the radiation through the substrate during operation 105 to the layer stack 101 For example, absorbers made of CdTe or amorphous silicon. However, it is also possible to apply this order to absorbers from CIGS, for example when structuring mechanically.

For example, the area points 121 a width of 150 μm or less, for example, a width of 100 μm. The first ditch 106 has, for example, a width of 20 microns. The second ditch 107 has, for example, a width of 20 microns. The third ditch 108 has, for example, a width of 40 μm. The area between the first ditch 106 and the second trench 107 has, for example, a width of 10 microns on. The area between the second ditch 107 and the third ditch 108 has, for example, a width of 10 microns. According to further embodiments, the contacting region 121 a width of less than 60 microns, for example, 50 microns.

According to further embodiments, the trench 108 completely with the insulating material 111 ( 4 ) filled. This is particularly advantageous in CdTe photovoltaic modules. In the case of CIGS photovoltaic modules, for example, transparent material is used for this purpose. The reflective, conductive material 110 will be in the entire contact area 121 Applied (see description of the 6 and 7 ). Thus, almost the entire contacting area 121 mirrored, allowing almost all the radiation that is in operation on the entire surface of the photovoltaic module 100 can be converted into electrical energy.

5 shows a schematic representation of a cross section of the photovoltaic module 100 according to further embodiments, which are particularly suitable for a-Si and CdTe photovoltaic modules. In contrast to the photovoltaic module 100 according to the embodiments of the 4 covers the electrically conductive material 110 almost the entire surface 118 the second layer 104 , Only one area 119 the surface 118 is free of electrically conductive material 110 , The area 119 immediately adjacent to the third ditch 108 at. Through the area 119 becomes the electrical insulation of the second layer 104 in the area of the third trench 108 guaranteed. Due to the extensive coverage of the layer 104 With the electrically conductive material is a particularly good conductivity on the substrate 105 opposite side of the absorber 103 allows. It is possible the electrically conductive material 110 to arrange strip-shaped and thus the layer 104 to support.

In particular, the electrically conductive material covers 110 the surface 118 the layer 104 within the management areas 112 down to the area 119 Completely. In the fields of 113 between the line area 112 is the surface 118 not with the electrically conductive material 110 covered.

6 shows a schematic representation of the photovoltaic module 100 according to further embodiments. In addition to the embodiments of the 4 and 5 is an absorber 103 remote surface 116 of the electrically conductive material 110 rough. A lamination foil 123 is on the the substrate 105 opposite side of the layer stack 101 and the electrically conductive material 110 applied. In addition, the cover element 125 arranged, for example, a glass. The arrows symbolize the incoming radiation during operation 124 ,

On the rough structure of the surface 116 becomes the incoming radiation 124 reflected and scattered. The electrically conductive material 110 reflects incoming radiation very well. Due to the rough structure of the surface 116 If the incoming radiation is additionally scattered. After reflection and scattering on the electrically conductive material 110 the radiation is at the transition between the cover element 125 and the atmosphere reflects. As a result, the radiation passes in the region of the electrically conductive material 110 on the photovoltaic module 100 meets, in the segment 122 so that this radiation can be converted into electrical energy.

The cover element 125 For example, glass having a refractive index of about 1.5. Outside the photovoltaic module 100 is in operation air with a refractive index of about 1. The refractive index jump, the radiation at the transition between the cover element 125 and the air reflects. This will increase the efficiency of the photovoltaic module 100 further increased. Almost all the radiation on the photovoltaic module 100 is used for the conversion into electrical energy, also a part of the radiation, which is on the contacting area 121 incident. Only radiation between the electrically conductive material and the segment 122 in the area of the third trench 108 on the photovoltaic module 100 impinges, is not or hardly converted into electrical energy.

7 shows a schematic representation of the photovoltaic module 100 according to further embodiments. In contrast to the embodiments of the 6 meets the radiation 124 in operation by the substrate 105 on the layer stack 101 , In order to at least partially convert the radiation into electrical energy, in the contacting area 121 on the photovoltaic module 100 meets, the contacting area becomes 121 designed so that the radiation in the segments 120 and 122 reflected and / or scattered. This is in addition to the rough surface 116 of the electrically conductive material 110 also a texture of the electrically insulating material 109 intended. In addition, the electrically insulating material 109 transparent. The arrows symbolize the path of radiation.

The radiation is partly at the interface between the substrate 105 and electrically insulating material 109 reflected and scattered. Another part of the radiation is at the junction between electrically insulating material 109 and electrically conductive material 110 reflected and scattered. In addition, it is possible the layer 102 in the area of the second trench 107 and in the area of the third trench 108 roughen, so that also takes place a scattering of radiation. The radiation in the area 121 on the photovoltaic module 100 impinges, so at least partially in the adjacent segments 120 and 122 reflected and scattered, where it can be converted into electrical energy. Thus, the efficiency of the photovoltaic module is further increased.

8th shows a schematic representation of a cross section of the photovoltaic module 100 According to further embodiments, which are particularly suitable for CdTe photovoltaic modules. In contrast to the photovoltaic module 100 according to the embodiments of the 3 to 7 For the production of the first electrically conductive layer 102 and the absorber 103 on the substrate 105 applied. Subsequently, the ditch 106 in the first electrically conductive layer 102 and the absorber 103 introduced, so that the first electrically conductive layer 102 and the absorber 103 are interrupted. The ditch 107 gets into the absorber 103 introduced so that the electrically conductive layer 102 exposed. The first ditch 106 comes with the electrically insulating material 109 filled.

Subsequently, the second electrically conductive layer 104 on one of the first electrically conductive layer 102 opposite side 126 of the absorber 103 printed. The electrically conductive material 110 is printed on the side 126 so that almost the entire surface of the absorber 103 of the electrically conductive material 110 is covered. Only the area 119 is released, thereby already digging the third trench 108 educated. The second electrically conductive layer 104 is already printed structured. The conductive material 110 forms the second electrically conductive layer 104 out. The conductive material 110 includes in particular graphite. The conductive material 110 is applied by means of an inkjet printing process.

The conductive material 110 bridges the ditch 106 and is in the ditch 107 with the first electrically conductive layer 102 in contact. Next to the ditch 107 is the layer 104 through the ditch 108 electrically isolated. As a result, the symbolized by the arrows current flow for series connection of the segments 120 and 122 possible.

9A to 9C show the photovoltaic module 100 according to further embodiments during manufacture. In contrast to the embodiments of the 3 to 7 be first as in 9A represented only the first ditch 106 and the third ditch 108 in the layer stack 101 brought in. Before the second ditch 107 is formed, the electrically insulating material 109 . 111 printed. The electrically insulating material 109 and 111 is printed together in one step and are in particular made of the same material. The electrically insulating material 109 . 111 is imprinted so that it is the two trenches 106 and 108 crowded. According to embodiments, the electrically insulating material is only in the contacting region 121 printed. According to further embodiments, the electrically insulating material is applied to the entire surface 118 the layer 104 printed, for example by means of a roller printing process.

Below, as in 9B shown the ditch 107 educated. The ditch 107 goes through the electrically insulating material 109 . 111 as well as through the layer 104 and the absorber 103 up to the shift 102 , The ditch 107 is between the ditch 106 and the ditch 108 arranged.

Subsequently, as in 9C represented, the electrically conductive material 110 printed. The electrically conductive material 110 is printed so that it is in the area of the segment 120 with the layer 104 is in contact, the ditch 106 bridged and in the ditch 107 with the layer 102 is in contact. The electrically conductive material 110 is not enough to the segment 122 so that the layer 104 of the segment 120 electrically from the layer 104 of the segment 122 is isolated. The drawn arrows in the layer stack 101 and the electrically conductive material 110 symbolize the current flow and the series connection of the segments 120 and 122 operational.

In the order of structuring and metallization according to the embodiments of the 9A to 9C is a reliable training of the series connection possible because the trench 108 completely electrically isolated. It is also possible to dig the ditch 107 very narrow form, as less tolerances must be considered. Thus, the contacting area becomes 121 very small. For example, in a transparent insulating material 109 . 111 , as related to 7 also explains a full mirroring of the contact area 121 possible. This is also the insulating material 111 in the area of the ditch 108 with the reflective conductive material 110 covered.

According to further embodiments, the trenches 106 and 108 in 9A placed directly next to each other. Upon the complaint by parts of the layers 103 and 104 between the trenches 106 and 108 is waived. The following manufacturing steps are corresponding as in connection with the 9B and 9C explained. By the immediate adjoining of the trenches 106 and 108 is it possible the contacting area 121 continue to shrink.

According to further embodiments, the insulating material 109 . 111 already applied structured. For example, the insulating material 109 . 111 applied after the ditch 107 into the layers 103 and 104 was introduced. The insulating material 109 . 111 is so applied that it's the trenches 106 and 108 fills and gives access to the ditch 107 free to dig the trench below 107 with the electrically conductive material 110 to be able to fill.

10 shows a schematic representation of a manufacturing plant 200 , The manufacturing plant 200 is particularly adapted to the series connection of the photovoltaic module in a single process step 100 by means of a combination of structuring steps and metallization steps. The substrate 105 with the unstructured layer stack 101 would provide electrical power with a small voltage and a large current during operation. This is not conventionally desired. Through the manufacturing plant 200 becomes the layer stack 101 into the segments 120 and 122 divided. Through the manufacturing plant 200 becomes the contact area 121 for series connection of the segments 120 and 122 educated. Thus, deliver by means of the manufacturing plant 200 In operation, the photovoltaic module produced electrical energy at a higher voltage and lower current than the unstructured layer stack 101 ,

The manufacturing plant 200 has a structuring device 201 on. The structuring device 201 has a process header 202 on. At the process head 202 According to embodiments are three laser beam devices 203 . 204 and 205 arranged. Moreover, on the same process head 202 two inkjet printing devices 206 and 207 arranged. According to further embodiments, fewer laser beam devices, for example two laser beam devices, are provided. According to further embodiments, three inkjet printing devices are on the process head 202 intended. According to further embodiments, the laser beam devices 203 . 204 and 205 arranged on a common process head and the inkjet printing devices 206 and 207 are arranged on a separate common process head. According to further embodiments are laser beam devices 203 . 204 and 205 arranged on both sides of the substrate. In particular for structuring CIGS photovoltaic modules, laser radiation is applied to the layer stack both from below and from above 101 irradiated. According to further embodiments, alternatively or additionally, mechanical structuring devices and / or etching devices for forming a trench in the layer stack are provided 101 on the process head 202 intended.

The substrate 105 is after the layer stack 101 was completely deposited by the structuring device 201 emotional. The process head 202 becomes relative to the layer stack 101 moved and through the laser beam devices 203 . 204 and 205 and the inkjet printing devices 206 and 207 the contact areas 121 educated. For example, by the laser beam device 203 the first ditch 106 educated. For example, by the laser beam device 204 the second ditch 107 educated. For example, by the laser beam device 205 the third ditch 108 educated. In particular, it is possible that the laser beam devices 203 . 204 and 205 at the same time the first ditch 106 , the second ditch 107 and the third ditch 108 per contact area 121 form.

The inkjet printing device 206 serves for example for introducing the electrically insulating material 109 in the first ditch 106 , The inkjet device 207 serves for example for applying the electrically conductive material 110 , The structuring steps are thus in a common structuring device 201 with a single process head 202 possible. According to embodiments, two process heads are provided. For example, the laser beam devices 203 . 204 and 205 arranged on a common process head and the inkjet printing devices 206 and 207 are arranged on a separate common process head. Due to the fact that the laser beam devices 203 . 204 and 205 applied to a single common process head are the trenches 106 . 107 and 108 positioned correctly with small tolerances. In addition, the electrically insulating material 109 and the electrically conductive material 110 within close tolerances as exactly as possible to the trenches 107 . 108 and 109 positioned. This makes it possible to contact the area 121 narrow form. Thus, the efficiency of the photovoltaic module is increased during operation.

As in 11 shown schematically are in the structuring device 201 the laser beam devices 203 . 204 and 205 for example on the side of the substrate 105 arranged. According to further embodiments, in particular when the substrate 105 is not transparent to the laser beams are the laser beam devices 203 . 204 . 205 wholly or partially on the side of the layer stack 101 arranged. The laser beam devices 203 . 204 and 205 For example, they are designed to emit laser beams of different wavelengths.

The inkjet printing devices 206 and 207 are on the side facing away from the substrate of the layer stack 101 arranged to the electrically insulating material 109 in the first ditch 106 to be able to bring and the electrically conductive material 110 on the surface 118 and in the second ditch 107 to contribute.

By combining the structuring steps into the common structuring device 201 is required for the manufacturing plant less area than conventional. This leads to a cost saving. Thereby, that a structuring after the complete deposition of the layer stack 101 is possible, can on the conventional necessary cleaning steps between the individual coating processes of the first layer 102 , the absorber 103 and the second layer 104 be waived.

Thus, it is also possible to dispense with the conventionally necessary production facilities.

Due to the omitted vacuum lock steps during the production of the layer stack 101 is the quality of the layer stack 101 improved.

Due to the deliberate reflection and scattering of the radiation in the contacting area 121 increases the efficiency of the photovoltaic module 100 , The effective range in which the radiation is largely without conversion into electrical energy through the module 100 Passes, can be on the area of the third trench 108 reduce, for example, to a width of 50 microns.

Consequently, it is possible to reduce the investment cost and the manufacturing cost. It is also possible, the efficiency of the photovoltaic modules 100 to increase. By the addition to the second trench 107 separately formed trench 108 we increase the process reliability. The third ditch 108 may depend on the tolerances in the application of the electrically conductive material 110 be formed relatively narrow. As a result, the efficiency of the photovoltaic module is high with good prevention of short circuits. By the arrangement of the laser beam devices 203 . 204 and 205 and the inkjet printing devices 206 and 207 in the common structuring device 201 No tolerances between the conventionally existing multiple structuring must be taken into account. Therefore, the areas between the trenches 106 . 107 and 108 be specified narrow.

The invention is not limited by the description based on the embodiments of these. Rather, the invention encompasses any novel feature as well as any combination of features, including in particular any combination of features in the claims, even if that feature or combination itself is not explicitly stated in the claims or embodiments. For example, a combination of the electrically insulating material 111 ( 4 ) and almost complete coverage of the surface 118 through the electrically conductive material 110 ( 5 ) possible.

Claims (20)

Photovoltaic module, produced by a method comprising the steps of: - providing a layer stack ( 101 ) with a first electrically conductive layer ( 102 ), an absorber ( 103 ) and a second electrically conductive layer ( 104 ) on a substrate ( 105 ), and subsequently: - severing the first layer ( 102 ), the absorber ( 103 ) and the second layer ( 104 ) and thereby forming a first trench ( 106 ), - severing the second layer ( 104 ) and the absorber ( 103 ) and thereby forming a second trench ( 107 ), - again severing at least the second layer ( 104 ) while forming a third trench ( 108 ) so that the second trench ( 107 ) between the first ( 106 ) and the third ( 108 ) Trench is arranged, - filling the first trench ( 106 ) with an electrically insulating material ( 109 ), - overwriting of the filled-in first trench ( 106 ) and filling up the second trench ( 108 ) with an electrically conductive material ( 110 ) for electrical contacting of second layer ( 104 ) and first layer ( 102 ). A photovoltaic module according to claim 1, produced by a method comprising: - applying the conductive material ( 110 ) such that a large part of the surface facing away from the absorber ( 118 ) of the second layer ( 104 ) of the conductive material ( 110 ) and one to the third trench ( 108 ) adjacent area ( 119 ) free of the conductive material ( 110 ) remains. Photovoltaic module for producing a photovoltaic module ( 100 ) prepared by a method comprising: - providing a layer stack ( 101 ) with a first electrically conductive layer ( 102 ) and an absorber ( 103 ), and subsequently: - severing the first layer ( 102 ) and the absorber ( 103 ) and thereby forming a first trench ( 106 ), - cutting through the absorber ( 103 ) and thereby forming a second trench ( 107 ) - filling the first trench ( 106 ) with an electrically insulating material ( 109 ), - printing one of the first electrically conductive layer ( 102 ) facing away ( 126 ) of the absorber ( 103 ) with a second electrically conductive layer ( 104 ) of a conductive material ( 110 ) such that the filled-in first trench ( 106 ) and the second trench ( 108 ) with the electrically conductive material ( 110 ) and a third trench ( 108 ) in the second electrically conductive layer ( 104 ) free of the electrically conductive material ( 110 ), the second trench ( 107 ) between the first trench ( 106 ) and the third trench ( 108 ) is arranged. Photovoltaic module according to one of claims 1 to 3, produced by means of a method, comprising: - complete filling of the second trench ( 107 ) with the electrically conductive material ( 110 ). Photovoltaic module according to one of claims 1 to 4, produced by a method comprising: - ink-jet printing of the electrically insulating material ( 109 ), - inkjet printing of the electrically conductive material ( 110 ). Photovoltaic module according to one of claims 1 to 5, produced by means of a method comprising: - filling the third trench ( 108 ) with an electrically insulating material ( 111 ). Photovoltaic module according to one of claims 1 to 6, produced by a method in which overwriting and filling comprises: forming a plurality of line regions ( 112 ) spaced apart along the first trench ( 106 ) and each of the conductive material ( 110 ) for electrical contacting of second layer ( 104 ) and first layer ( 102 ), the second layer ( 104 ) in other areas ( 113 ) between the pipe sections ( 112 ) free of the electrically insulating material ( 109 ). Photovoltaic module according to claim 7, produced by a method in which the filling of the first trench ( 106 ) with the electrically insulating material ( 109 ) comprises: - forming a plurality of isolation regions ( 114 ) spaced apart along the first trench ( 106 ) are arranged and each of the electrically insulating material ( 109 ), wherein the first trench ( 106 ) in another area ( 115 ) free of the electrically insulating material ( 109 ), the isolation regions ( 114 ) with the line areas ( 112 ) correspond. Photovoltaic module according to one of Claims 1 to 8, produced by means of a method in which the filled-in first trench ( 106 ) is overwritten so that a surface ( 116 ) of the conductive material ( 110 ) has a predetermined roughness, in order to receive radiation ( 125 ). Photovoltaic module according to Claim 9, produced by means of a method in which the insulating material ( 109 ) is transparent and applied so that it has a given texture ( 117 ) having. Photovoltaic module according to one of Claims 1 to 10, produced by means of a method in which the insulating material ( 109 . 111 ) is applied so that it has a trench which is arranged so that it coincides with the position of the second trench ( 107 ) corresponds. Photovoltaic module according to one of Claims 1 to 11, produced by means of a method in which the first ( 106 ) And the third ( 108 ) Ditch be formed so that the first ( 106 ) And the third ( 108 ) Trench immediately adjacent to each other. Photovoltaic module with a plurality of electrically connected segments ( 120 . 122 ), comprising: - one on a substrate ( 105 ) arranged layer stack ( 101 ) comprising: - a first electrically conductive layer ( 102 ), - a photoactive absorber ( 103 ), - a second electrically conductive layer ( 104 ), - a first trench ( 106 ), the absorber ( 103 ) and the first electrically conductive layer ( 102 ) to form the segments ( 120 . 122 ) and in which an electrically insulating material ( 109 ), - a second trench ( 107 ), the absorber ( 103 ) interrupts, - a third trench ( 108 ), which at least the second conductive layer ( 104 ), the first ( 106 ), the second ( 107 ) and the third trench ( 108 ) are arranged so that the second trench ( 107 ) between the first ( 106 ) and the third ( 108 ) Trench is arranged, - a contact ( 110 ), over which the second layer ( 104 ) electrically with the first layer ( 102 ) is coupled to the series connection of the segments ( 120 . 122 ) on the first layer ( 102 ) facing away from the absorber ( 103 ) is applied to the electrical bridging of the first trench ( 106 ) and in the second trench ( 107 ) with the first layer ( 102 ) is electrically coupled. Photovoltaic module according to claim 13, in which the contacting ( 110 ) on an absorber ( 103 ) facing away from the surface ( 116 ) a given Roughness to detect incoming radiation ( 125 ). Photovoltaic module according to claim 13 or 14, wherein the contacting ( 110 ) in a plurality of spaced line regions (US Pat. 112 ) along the first trench ( 106 ) is formed and in particular the electrically insulating material ( 110 ) in the first trench only in the lead areas ( 112 ) is arranged. A photovoltaic module according to any one of claims 13 to 15, wherein in the third trench ( 108 ) an insulating material ( 111 ) is arranged. Photovoltaic module according to one of Claims 13 to 16, in which the second electrically conductive layer is separate from the contacting ( 110 ) and from the first trench ( 106 ) and the second trench ( 107 ) is broken. Manufacturing plant ( 200 ), for the production of a photovoltaic module ( 100 ) having a plurality of segments, which is designed to structure a large-area photovoltaic cell in the plurality of segments and to metallize for series connection of the segments. Manufacturing plant ( 200 ) according to claim 18, which is designed for - providing a layer stack ( 101 ) with a first electrically conductive layer ( 102 ), an absorber ( 103 ) and a second electrically conductive layer ( 104 ) on a substrate ( 105 ), and subsequently: - severing the first layer ( 102 ), the absorber ( 103 ) and the second layer ( 104 ) and thereby forming a first trench ( 106 ), - severing the second layer ( 104 ) and the absorber ( 103 ) and thereby forming a second trench ( 107 ), - again severing at least the second layer ( 104 ) while forming a third trench ( 108 ) so that the second trench ( 107 ) between the first ( 106 ) and the third ( 108 ) Trench is arranged, - filling the first trench ( 106 ) with an electrically insulating material ( 109 ), - overwriting of the filled-in first trench ( 106 ) and filling up the second trench ( 108 ) with an electrically conductive material ( 110 ) for electrical contacting of second layer ( 104 ) and first layer ( 102 ). Production plant according to Claim 18 or 19, with a structuring device ( 201 ), in which on a common process head ( 202 ) at least two laser beam devices ( 203 . 204 ) are provided and on a further common process head two ink jet printing devices ( 206 . 207 ) are provided.

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