DE202017105350U1 - High frequency impedance matching network and its use - Google Patents

Abstract

A high frequency impedance matching network comprising an input port and an output port, said input port being formed as an input to a signal of a high frequency generator G, said output port as an output for a signal to a load L, and input port and output port through a ladder circuit of two or more more chain elements are coupled, characterized in that
- Each chain element a series branch (Z _s , Z _s1 Z _s2 ) with a series branch reactance (X _s , X _s1 , X _s2 ) and a parallel _branch (Z _p , Z _p1 , Z _p2 , Z _p3 ) with a parallel branch reactance (X _p , X _p1 , X _p2 , X _p3 ) and a first switch (S _s , S _s1 , S _s2 , S _s3 , S _p , S _p1 , S _p2 , S _p3 ) includes, as the drain-source source a transistor is formed, wherein
- By means of the first switch (S _s , S _s1 , S _s2 ) bridging the series branch reactance (X _s , X _s1 , X _s2 ) is switchable or
the first switch (S _p , S _p1 , S _p2 , S _p3 ) in the parallel _branch (Z _p , Z _p1 , Z _p2 , Z _p3 ) in series with the parallel-arm reactance X _p , X _p1 , X _p2 , X _p3 is switched.

Description

The invention relates to a high - frequency impedance matching network and its use according to the preambles of the independent claims.

Radio Frequency Impedance Adaptation networks for the supply of high frequency energy from a source to a consumer, such as devices for generating plasma excitations, telecommunications transmitters or particle accelerators are known. With such networks, an adaptation of the impedance between the source for high-frequency signals, in particular a high-frequency generator, and the consumer, which is also referred to below as "load". In principle, the impedance matched by the matching network should substantially correspond to the impedance of the load, otherwise a part of the wave produced by the source will be reflected and thus the full available power in the load can not be converted. In the case of the above and other applications, the load often has a changing impedance within a short time. For example, for magnetron sputtering cathode plasma excitations in a plasma chamber, the complex impedance typically varies between 1 and 10 ohms and -j 5 ohms and 20 ohms.

Known networks include networks with reactances, that is inductors and capacitances, using different network or circuit topologies. Networks with fixed time reactances or topologies can only realize a sufficiently accurate impedance matching of the source to a time-variable load in a small process window.

Furthermore, networks are known which have mechanically adjustable components, in particular capacitors and almost always at least one inductor. For example, one can improve the adjustment by means of mechanically adjustable vacuum capacitors, wherein the adjustment is usually done automatically via an impedance measuring device, a control circuit and motors for driving the capacitors.

Variable reactance matching networks used in plasma excitations are typically designed for output currents between 25A and 300A at 13.56 MHz. Similar matching networks are also used to operate particle physics accelerators with pulse powers up to over 500 kW, such as the company's SIS 100 for heavy ion research, Darmstadt.

Since the capacitances of the vacuum capacitors are mechanically adjusted, the so-called tuning time (duration of tuning of the network until the impedance to the load substantially corresponds to the impedance of the load) may be a few seconds at unfavorable starting values. Even with optimized starting values, the tuning time with such capacitors is difficult to bring below a threshold of 1 second. Since the technological trend is toward shorter process times, especially plasma excitations, which are on the order of one second in some applications, a tuning time on the order of one second is unacceptably large. On the contrary, it is desirable to have setting times of the network in the millisecond range which can no longer be achieved with mechanically adjustable vacuum capacitors.

Another problem with the known networks of mechanically adjustable reactances is the low tuning accuracy relative to the requirements of the users. For large output currents large vacuum capacitors with high current carrying capacity are necessary, which require high torques for the adjustment. Slip-stick effects and the very high resonance characteristics of the corresponding drives in many applications limit the tuning accuracy of the networks. For a good reproducibility of production processes, however, a relatively precise high-frequency tuning of <-20 dB is required in many cases.

Special, by the switching of relays tuned, switched matching networks have been around for some time in the field of radio technology, especially in amateur radio, which usually only relatively small benefits are required in the radio application and only with a frequency change tuning is necessary, which is not too often occurs.

For plasma applications, however, relays are not suitable because the required power classes of the relays are not available and in plasma processes due to the inherently dynamic load a permanent Nachtunen is necessary - unlike the usual radio applications. Frequent Nachtunen would have many switching cycles and thus too short life of the relay result.

For switched matching networks, the use of PIN diodes has been proposed. For example, the use of PIN diodes for switched adaptation networks in the documents EP 1 236 275 B1 . US 6,677,828 , B1, EP 1 182 686 A2 . US 0,2008,028,453.7 A1 . US 0,2010,008,512.9 A1 . US Pat. No. 2,010,022,541.1 A1 . US, 542,076 B2 . KR10 2013 115 826A . JP 00 2012 142 285 A . DE 10 2005 058 875 A1 proposed.

Adaptation networks with bipolar switching transistors are used in the US 8 416 008 B2 and US 9,124,248 B2 discussed, however, which have low practicality due to low power stability and high losses.

From the WO 2016/100841 A1 Furthermore, switchable matching networks with phase-switched elements are known in which various other semiconductor components are proposed as switches in addition to CMOS components, such as FETs (Field Effect Transistor) and HEMTs (High Electron Mobility Transistor).

Further, in so-called load-pull tuning and source-pull tuning, the use of so-called impedance tuners is common to measure the impedance of a non-linear RF component, such as an RF or MW power amplifier or transistor. In this case, the load impedance or source impedance with respect to the HF component is mechanically manipulated such that it assumes a value deviating from 50 ohms, wherein the HF component reacts to the various impedances. Load-pull tuning and source-pull tuning are realized by means of the changeable impedance of the impedance tuner. An automatic frequency-selective microwave tuner for load-pull transistor tests is from the US 7248866 B1 known, wherein independently controllable reflection factors are generated. Basically, such a tuner comprises electro-mechanical components for which variable impedance can be realized by positioning partial components relative to one another in a wide range. In the known tuner, for example, horizontally and vertically adjustable high-Q resonance probes are used. Specifically, the tuner includes a 50 ohm precision bar lead, two parallel plates, an intermediate conductor, and a metallic probe. By positioning the probe, the component to be examined can be exposed to almost any impedance and all values contained in a Smith chart can be realized.

Basically, the known impedance based on mechanical manipulation tuner on the same problems in terms of tuning time and accuracy, which have already been addressed in the conventional high-frequency impedance matching networks.

The object of the invention is to provide an electronic high-frequency impedance matching network with which short adaptation times of <10 ms (milliseconds) with a high tuning accuracy of <-20 dB (decibels) can be achieved in a relatively wide power range. Power in the range of 1W to 50 kW, in principle also higher power up to 500kW are conceivable.

The object is achieved by the features of the independent claims.

As a precaution, some terms and terms used in the description and claims of the present patent are explained below.

A port is the access to a component, where electromagnetic energy can be released or absorbed.

A conduit is referred to as a device which electrically connects two points for the transmission of electromagnetic energy between these points, in particular a cable connection. It is understood that the energy may also be in the form of microwaves or other high frequency electromagnetic form. As a bridging of a component, a temporary alternative current path is designated with the same or greater power transmission capacity. A stub is a portion of an adjustable length transmission line whose one end is shorted or open and the other end is connected in parallel or in series with a main line.

Reactance is the imaginary part of an impedance. A capacitive reactance is a reactance with a negative value. An inductive reactance is called a reactance with a positive value. As a capacitor, a two-terminal is designated, which is characterized essentially by its capacity. As an inductive element, a passive bipolar network element is referred to, in which recorded electrical energy is stored magnetically and completely recoverable.

Directional expressions, such as "parallel" or "between," are used merely as a tool to describe the invention and are not to be construed in a literal sense as limiting.

A derailleur is a connection of two-ports in which the output port of each second port, from the last one, is connected to the port of the next port.

By "series connection" or "connected in series" is meant the series connection of two or more components in the network, so that they form a single current path. The connection of several two-pole networks is called "parallel connection" or "parallel connection" denoted so that their poles are connected to a common pole pair.

The terms "switched", "coupling", "coupled", etc. refer to any means by which energy transfer between two or more elements is allowed, the arrangement of one or more additional elements being conceivable but not necessarily required. The terms "directly coupled, directly connected, etc." include the absence of such additional elements.

The terms "grounded" or "grounded" refer to the existence of an electrical connection between a given point in the network and the local earth.

The terms "drain", "source" and "gain" are used in their usual meaning in semiconductor technology.

In particular, the following frequencies are referred to as ISM (Industrial, Scientific and Medical) frequencies: 6.765 MHz, 13.553 MHz, 26.957 MHz, 40.66 MHz, 433.05 MHz, 902 MHz, 2.45 GHz.

The high frequency impedance matching network of the invention comprising an input port and an output port, the input port being input to a signal of a high frequency generator G , the output port as an output for a signal to a load L is formed and input port and output port are coupled by means of a chain circuit of two or more chain elements, characterized in that each chain element is a series branch Z _s . Z _s1 . Z _s2 with a series branch reactance X _s . X _s1 . X _s2 and a parallel branch Z _p . Z _p1 . Z _p2 . Z _p3 with a parallel branch reactance X _p X _p1 . X _p2 . X _p3 and a first switch S _s . S _s1 . S _s2 . S _s3 . _P . S _p1 . S _p2 . _P3 which is formed as a drain-source path of a transistor, wherein by means of the first switch S _s . S _s1 . S _s2 , a bridging of the series branch reactance X _s . X _s1 . X _s2 switchable or the first switch _P . S _p1 . S _p2 . _P3 in parallel branch Z _p . Z _p1 . Z _p2 . Z _p3 in series with the parallel branch reactance X _p . X _p1 . X _p2 . X _p3 is switched.

Advantageously, high switching speeds are possible with the inventive design of the switches, resulting from the available gate current and the gate-source capacitance of the transistor. According to the invention, the required isolation for the high-frequency voltage and additionally in the closed switching state, a high high-frequency current can be realized with small losses by such a switch formed in the open switching state. The elimination of mechanical parts increases the accuracy of tuning the network.

The matching network is preferably designed for high-frequency electromagnetic energy in the range 1 kHz to 100 GHz, in particular for frequencies of 100 kHz, 100 MHz, 1 GHz and 100 GHz. Most preferably, the matching network is designed for ISM frequencies as mentioned above.

A further embodiment of the invention is characterized in that the chain element in addition to the first switch comprises a second switch, wherein the second switch is connected in parallel branch, if by means of the first switch a bypass of the series branch reactance is switchable or by means of the second Switching a bypass of the series reactance is switchable, if the first switch is connected in parallel branch.

A further embodiment of the invention is characterized in that the transistor is a compound semiconductor transistor, in particular a GaN or a SiC transistor. Further, the transistor may also be a GaAs / AIGaAs or InGaAs or InP / GalnAs transistor. It is understood that the transistors are wired according to, so that the drain-source path acts as a switch with the desired properties, in particular takes time stable defined states and can change quickly. In today's transistors, a bias or an internal or externally connected diode is provided as a precaution to stabilize the switching states.

According to the invention, the transistors are designed for high-frequency electromagnetic energy up to at least 100 GHz, preferably in the range of the ISM frequencies.

• - Maximale Spannungsfestigkeit der Drain-Source Strecke
• - Maximale Stromtragfähigkeit (HF) Drain-Source Strecke
• - Ron Widerstand
• - Kapazität der Drain-Source Strecke (mit und ohne Bias)

When using the network in the field of plasma excitations, the following design parameters of the transistors are to be considered according to the invention:

• - Maximum dielectric strength of the drain-source path
• - Maximum ampacity (HF) drain-source path
• - Ron resistance
• - Capacity of the drain-source path (with and without bias)

As in the case of the use of the invention in the field of plasma excitations, according to the invention, the design of the transistors and adaptation of the topology of the network in other fields of application, such as electrical and inductive heating and the other specified applications.

Another embodiment of the invention is characterized in that the parallel branch Z _p . Z _p1 . Z _p2 . Z _p3 connected to ground.

Another embodiment of the invention is characterized in that in the parallel branch Z _p . Z _p1 . Z _p2 . Z _p3 switched first switch _P , S _p1 , S _p2 . _P3 with its source connected to ground, enabling a ground-based drain feed.

Preferably, the transistors have a high potential, because in the open state, no zero crossings of the potential are permissible, whereby the transistors would become conductive. A corresponding DC drain bias may be externally applied or formed by a diode. In transistors with integrated freewheeling diode such a diode does not have to be provided externally.

Preferably, the driving of the transistors takes place via an optical link, which allows the rapid control of the transistors, regardless of their reference potential. This is preferred if the source is at RF potential, as in the case of a transistor in the series branch S _s , The gate control voltage then has to be added to the source RF voltage, which can be problematic at high voltages or expensive because of the necessary use of an RF transformer.

A further embodiment of the invention is characterized in that the parallel branch reactance X _p . X _p1 . X _p2 . X _p3 is grounded.

Another embodiment of the invention is characterized in that the parallel branch reactance X _p . X _p1 . X _p2 . X _p3 as a capacitor C _p . C _p1 . C _p2 . C _p3 or is designed as an inductive element, whereby a simply structured and easily scalable matching network can be created.

A further embodiment of the invention is characterized in that the series branch reactance X _s . X _s1 . X _s2 as a capacitor or as an inductive element L _s1 . L _s2 . L _s3 is formed, with which a simply structured and easily scalable adjustment network can be created.

Another embodiment of the invention is characterized in that in parallel or in series with that in Serienzweig Z _s . Z _s1 . Z _s2 switched switch S _s . S _s1 . S _s2 another reactance is switched.

A further embodiment of the invention is characterized in that in parallel or in series with that in the parallel branch Z _p . Z _p1 . Z _p2 . Z _p3 switched switch _P . S _p1 . S _p2 . _P3 another reactance is switched.

With such a circuit of further reactances, the drain-source capacitance can be compensated by an inductance or generate a better-defined drain-source capacitance by an external further capacitance.

A further embodiment of the invention is characterized in that the matching network is designed for frequencies greater than 1 GHz, the reactances of the series connection Z _s and / or the reactances of the parallel branch series circuit Z _p are designed as pipe sections or stub lines.

A further embodiment of the invention is characterized in that the matching network in the operation of a plasma excitation, for example plasma excitations for surface treatments, light generation, or electrical or inductive heating of workpieces as well as in telecommunications transmitters, including base stations, amateur radio, television and radio, radar, radio relay is used.

Another embodiment of the invention is characterized in that the matching network is used in the coupling of high-frequency power in a particle accelerator or a synchrotron radiation source.

Another embodiment of the invention relates to use in measurements by the load-pull method or the source-pull method. In this case, a load or source impedance is varied with constant measurement of the output power or input power of the load. According to the laws of power matching, a maximum of power is achieved when the output impedance of the RF generator is equal to the conjugate complexes of the load impedance.

It is understood that for the operation of the matching network corresponding drivers for the control of the transistors, metrological devices and a, preferably digital control or regulation of the matching network are provided. Such components are basically known to the person skilled in the art.

• Leistung: 1 kW 5 kW 10 kW 20 kW
• Max. Ausgangsstrom 20 A 50 A 100 A 200 A
• Min. Lastimpedanz (Realteil) 2,5 Ω 2 Ω 1 Ω 0,5 Ω
• Eingangs-Nennimpedanz 50 Ω
• Abstimmgeschwindigkeit < 50 ms
• Abstimmungsgenauigkeit < 0,05 bzw. < - 26 dB (Pr/Pv < 0,25 %)

A preferred embodiment of the adaptation network for high-frequency plasma applications according to the invention has the following basic data

• Power: 1 kW 5 kW 10 kW 20 kW
• Max. Output current 20 A 50 A 100 A 200 A
• Min. Load impedance (real part) 2.5 Ω 2 Ω 1 Ω 0.5 Ω
• Input nominal impedance 50 Ω
• Tuning speed <50 ms
• Voting accuracy <0.05 or <- 26 dB (Pr / Pv <0.25%)

The costs for these adaptation networks should be lower than those of currently available matching networks of the same performance class. The tuning speed <50 ms is more than 1 order of magnitude faster than that of today's customary matching networks with mechanically adjusted capacitors. As a result, the defined process operating point is reached faster and the time of the undefined high-frequency conditions is significantly shortened. This is of particular importance for sensitive processes with chemical reactions (reactive sputtering, PECVD, etching), processes with short process times and for pulsed processes. The tuning accuracy is at least an order of magnitude higher than in conventional matching networks because there is no longer any mechanical positioning precision of capacitors involved. Together with a precise measuring technique and efficient coordination algorithms a much more precise process stability and reproducibility can be achieved.

Further advantages of the invention will become apparent from the following description. The embodiments of the invention are shown schematically in the figures. The same reference numerals in the individual figures designate the same or functionally identical or with respect to their functions corresponding elements. The figures are merely examples and are not intended to be limiting. The drawings, the description and the claims contain numerous features in combination. The person skilled in the art will expediently also consider the features individually and combine them into meaningful further combinations.

• 1: Ein Ausführungsbeispiel des Hochfrequenz- Impedanz Anpassungsnetzwerks
• 2: Ein weiteres Ausführungsbeispiel eines erfindungsgemäßen Hochfrequenz-Impedanz- Anpassungsnetzwerks.
• 3a: Ein Smith Diagramm mit der Darstellung des anpassbaren Impedanz- Bereichs eines Ausführungsbeispiels der Erfindung.
• 3b: Ein Smith Diagramm mit des anpassbaren Impedanz- Bereichs einer L-Schaltung nach dem Stand der Technik.

In detail, for example:

• 1 : An embodiment of the high frequency impedance matching network
• 2 : Another embodiment of a high-frequency impedance matching network according to the invention.
• 3a : A Smith chart showing the adjustable impedance range of an embodiment of the invention.
• 3b : A Smith diagram with the adaptive impedance range of a prior art L-circuit.

In 1 an embodiment of the invention is shown, wherein G a high frequency generator and L For example, a load is called a plasma excitation device.

The high frequency impedance matching network comprises an input port and an output port, the input port being the input to a signal of the high frequency generator G, the output port being the output to the signal to the load L is trained.

Between input port and output port, a derailleur of two or more chain elements is arranged, each chain element having a series branch Z _s . Z _s1 Z _s2 with a series branch reactance X _s . X _s1 . X _s2 and a parallel branch Z _p . Z _p1 . Z _p2 . Z _p3 with a parallel branch reactance X _p . X _p1 . X _p2 . X _p3 as well as a switch S _s . S _s1 . S _s2 . S _s3 . _P . S _p1 . S _p2 . _P3 having. At least one of the switches is designed as a drain-source path of a transistor.

By means of the switches S _s . S _s1 . S _s2 , may be a bridging of the series branch reactance X _s . X _s1 . X _s2 . X _s3 be switched.

In the parallel branches Z _p . Z _p1 . Z _p2 . Z _p3 are each switch _P . S _p1 . S _p2 . _P3 in series with the parallel branch reactances X _p . X _p1 . X _p2 . X _p3 connected.

The illustrated components are through line sections L _n connected.

According to the invention, at least one of them is, but preferably all switches S _s1 . S _s2 . S _s3 . S _p1 . S _p2 . _P3 designed as a drain-source path of a compound semiconductor transistor.

Preferably, the transistors are gallium nitride or silicon carbide transistors. The parallel branches Z _p . Z _p1 . Z _p2 . Z _p3 are connected to ground, with the switches _P . S _p1 . S _p2 with their source connected to ground.

In 2 is a further embodiment of the invention is shown, wherein the reactances of the sake of simplicity not individually designated series branches as inductors L _s1 . L _s2 . L _s3 are formed.

The reactances of the parallel branches not designated individually for reasons of simplification are in 2 as capacitors C _p . C _p1 . C _p2 . C _p3 educated.

In 3a and 3b For example, the imaginary part normalized to an impedance Z ₀ = 50 ohms and the real part of the matching impedance of matching networks are shown in a Smith chart.

Such diagrams are known, for example, from the publications PH Smith: Transmission Line Calculator, Electronics Volume 12, No1, pp 29 to 31 January 1939 and improved Transmission Line Calculator Electronics Volume 17, No 01, pp 130 to 133, 318 to 325 , January 1944.

In 3a the Smith diagram of a simulation of the impedance values of a network according to the invention is shown. As usual with Smith diagrams, the real part of the impedance is closed circles and its imaginary part is associated with open circular sections.

Dark dots in the illustration are the adjustable load impedances in various switch position combinations.

The diagram of 3a covers the adaptation range, which is particularly important for many plasma applications, from 1 ohm to 10 ohm reel and from -j 5 ohm to -j 20 ohm imaginary.

In the results of 3a is the ratio of reflected power P _r to P _i <15%. The power handling capacity is <2000 W and the efficiency> 65%, whereby it should be noted that these values are far surpassed in most areas of the diagram.

In the 3b For comparison, a Smith Chart line diagram of a known from the prior art L-circuit with an adjustable capacitance between 200pF and 1000pF in parallel branch and serienweig an adjustable capacitance between 155pF and 500pF and an inductance of 1000nH is shown, the one of solid line-framed area shows the adjustable impedance range of this circuit. The comparison of 3a With 3b shows that the Smith diagram of a network according to the invention can cover the adjustable impedance range of a typical L-switched matchbox.

LIST OF REFERENCE NUMBERS

G

generator

L

load

L _n

Line sections n

S _s

Switch s

S _s1

Switch s1

S _s2

Switch s2

_P

Switch p

S _p1

Switch p1

S _p2

Switch p2

_P3

Switch p3

X _s

Serial branch reactance s

X _s1

Serial branch reactance s1

X _s2

Serial branch reactance s2

X _p

Parallel branch reactance p

X _p1

Parallel branch reactance p1

X _p2

Parallel branch reactance p2

X _p3

Parallel branch reactance p3

L _s1

Coil s1

L _s2

Coil s2

L _s3

Coil s3

C _p

Capacitor p

C _p1

Capacitor p1

C _p2

Capacitor p2

C _p3

Capacitor p3

Z _s

Serial branch s

Z _s1

Serial branch s1

Z _s2

Serial branch s2

Z _p

Parallel branch p

Z _p1

Parallel branch p1

Z _p2

Parallel branch p2

Z _p3

Parallel branch p3

QUOTES INCLUDE IN THE DESCRIPTION

This list of the documents listed by the applicant has been generated automatically and is included solely for the better information of the reader. The list is not part of the German patent or utility model application. The DPMA assumes no liability for any errors or omissions.

Cited patent literature

• EP 1236275 B1 [0010]
• US 6677828 [0010]
• EP 1182686 A2
• US 020080284537 A1 [0010]
• US 020100085129 A1 [0010]
• US 020100225411 A1 [0010]
• US 542076 B2 [0010]
• KR 102013115826 A [0010]
• JP 002012142285 A [0010]
• DE 102005058875 A1 [0010]
• US 8416008 B2 [0011]
• US 9124248 B2 [0011]
• WO 2016/100841 A1 [0012]
• US 7248866 B1 [0013]

Claims (13)

A high frequency impedance matching network comprising an input port and an output port, said input port being formed as an input to a signal of a high frequency generator G, said output port as an output for a signal to a load L, and input port and output port through a ladder circuit of two or more more chain elements are coupled, characterized in that - each chain element a series branch (Z _s , Z _s1 Z _s2 ) with a series branch reactance (X _s , X _s1 , X _s2 ) and a parallel _branch (Z _p , Z _p1 , Z _p2 , Z _p3 ) having a parallel-branch reactance (X _p , X _p1 , X _p2 , X _p3 ) and a first switch (S _s , S _s1 , S _s2 , S _s3 , S _p , S _p1 , S _p2 , S _p3 ), which is designed as a drain-source path of a transistor, wherein - by means of the first switch (S _s , S _s1 , S _s2 ) a bridging of the series-branch reactance (X _s , X _s1 , X _s2 ) is switchable or the first switch (S _p , S _p1 , S _p2 , S _p3 ) in the parallel _branch (Z _p , Z _p1 , Z _p2 , Z _p3 ) is connected in series with the parallel-arm reactance X _p , X _p1 , X _p2 , X _p3 . Radio Frequency Impedance Matching Network Claim 1 , characterized in that the chain element in addition to the first switch comprises a second switch, wherein the second switch in the parallel branch (Z _p Z _p1 , Z _p2 , Z _p3 ) is connected, if by means of the first switch bridging the series branch reactance (X _s , X _s1 , X _s2 ) is switchable or wherein by means of the second switch, a bridging of the series reactance (X _s , X _s1 , X _s2 ) is switchable, if the first switch in the parallel _branch (Z _p Z _p1 , Z _p2 ) is connected , Radio Frequency Impedance Matching Network Claim 1 , Characterized in that the transistor is a GaN, SiC, GaAs / AlGaAs, InGaAs or InP / GaInAs transistor. Radio Frequency Impedance Matching Network Claim 1 , characterized in that the parallel _branch (Z _p , Z _p1 , Z _p2 , Z _p3 ) is connected to ground. Radio Frequency Impedance Matching Network Claim 4 , characterized in that the first switch (S _p , S _p1 , S _p2 , S _p3 ) connected in the parallel _branch (Z _p , Z _p1 , Z _p2 , Z _p3 ) is grounded with its source. High-frequency impedance matching network according to one of the preceding claims, characterized in that the parallel-branch reactance (X _p , X _p1 , X _p2 , X _p3 ) as a capacitor (C _p , C _p1 , C _p2 , C _p3 ) or as inductive Element is formed. High-frequency impedance matching network according to one of the preceding claims, characterized in that the series branch reactance (X _s , X _s1 , X _s2 ) as a capacitor or as an inductive element (L _s1 , L _s2 , L _s3 ) is formed. High-frequency impedance matching network according to one of the preceding claims, characterized in that a further reactance is connected in parallel or in series with the switch (S _s , S _s1 , S _s2 ) connected in the series branch (Z _s , Z _s1 , Z _s2 ) , High-frequency impedance matching network according to one of the preceding claims, characterized in that, in parallel or in series to the parallel branch (Z _p, Z _p1 Z _p2, Z _p3) connected switches (S _p, S _{p 1,} S _{p 2,} S _{p 3)} another reactance is switched. High-frequency impedance matching network according to one of the preceding claims, characterized in that the matching network is designed for frequencies greater than 1 GHz, the reactances (X _s , X _s1 , X _s2 ,) of the series branch (Z _s , Z _s1 Z _s2 ) and / or the reactances (X _p , X _p1 , X _p2 , X _p3 ) of the parallel branch (X _s , X _s1 , X _s2 , X _s3 ) are designed as line sections or as stubs. Use of a high-frequency impedance matching network according to any one of the preceding claims, characterized in that the matching network in a plasma excitation for surface treatments, or for the generation of light, for electric or inductive heating of workpieces or at a telecommunications transmitter, including base stations, amateur radio, television and radio , Radar, radio relay is used. Use of a high frequency impedance matching network according to any one of Claims 1 to 10 , characterized in that the matching network is used in the coupling of high frequency power at a particle accelerator or a synchrotron radiation source. Use of a high frequency impedance matching network according to any one of Claims 1 to 10 , characterized in that the matching network is used in measurements according to the load-pull method or the source-pull method.

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