DE2007627C3 - - Google Patents

Info

Publication number: DE2007627C3
Authority: DE; Germany
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.): Expired

Application number

DE2007627A

Other versions

DE2007627B2 (de

DE2007627A1 (de

Inventor

Tegze Dipl.-Ing. Haraszti

Rainer Dipl.-Phys. Grosholz

Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)

Licentia Patent Verwaltungs GmbH

Original Assignee

Licentia Patent Verwaltungs GmbH

Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)

1970-02-19

Filing date

1970-02-19

Publication date

1973-10-11

1970-02-19 Application filed by Licentia Patent Verwaltungs GmbH filed Critical Licentia Patent Verwaltungs GmbH

1970-02-19 Priority to DE19702007627 priority Critical patent/DE2007627B2/de

1970-12-24 Priority to JP45118458A priority patent/JPS504555B1/ja

1971-02-18 Priority to US00116494A priority patent/US3788904A/en

1971-04-19 Priority to GB20053/71A priority patent/GB1291682A/en

1971-09-02 Publication of DE2007627A1 publication Critical patent/DE2007627A1/de

1973-03-22 Publication of DE2007627B2 publication Critical patent/DE2007627B2/de

1973-10-11 Application granted granted Critical

1973-10-11 Publication of DE2007627C3 publication Critical patent/DE2007627C3/de

Status Granted legal-status Critical Current

Classifications

- H01L27/0727—

DE19702007627 1970-02-19 1970-02-19 Verfahren zum herstellen einer integrierten halbleiterschaltung Granted DE2007627B2 (de)

Priority Applications (4)

Application Number	Priority Date	Filing Date	Title
DE19702007627 DE2007627B2 (de)	1970-02-19	1970-02-19	Verfahren zum herstellen einer integrierten halbleiterschaltung
JP45118458A JPS504555B1 (de)	1970-02-19	1970-12-24
US00116494A US3788904A (en)	1970-02-19	1971-02-18	Method of producing an integrated solid state circuit
GB20053/71A GB1291682A (en)	1970-02-19	1971-04-19	Method of producing an integrated solid-state circuit

Applications Claiming Priority (1)

Application Number	Priority Date	Filing Date	Title
DE19702007627 DE2007627B2 (de)	1970-02-19	1970-02-19	Verfahren zum herstellen einer integrierten halbleiterschaltung

Publications (3)

Publication Number	Publication Date
DE2007627A1 DE2007627A1 (de)	1971-09-02
DE2007627B2 DE2007627B2 (de)	1973-03-22
DE2007627C3 true DE2007627C3 (de)	1973-10-11

Family

ID=5762721

Family Applications (1)

Application Number	Title	Priority Date	Filing Date
DE19702007627 Granted DE2007627B2 (de)	1970-02-19	1970-02-19	Verfahren zum herstellen einer integrierten halbleiterschaltung

Country Status (4)

Country	Link
US (1)	US3788904A (de)
JP (1)	JPS504555B1 (de)
DE (1)	DE2007627B2 (de)
GB (1)	GB1291682A (de)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
GB1357515A (en) *	1972-03-10	1974-06-26	Matsushita Electronics Corp	Method for manufacturing an mos integrated circuit
JPS5410228B2 (de) *	1973-08-20	1979-05-02
US4449224A (en) *	1980-12-29	1984-05-15	Eliyahou Harari	Dynamic merged load logic (MLL) and merged load memory (MLM)
JPS5994453A (ja) *	1982-10-25	1984-05-31	ゼネラル・エレクトリック・カンパニイ	オン抵抗を低減した高圧半導体デバイス
DE3408285A1 (de) *	1984-03-07	1985-09-19	Telefunken electronic GmbH, 7100 Heilbronn	Schutzanordnung fuer einen feldeffekttransistor
US4694313A (en) *	1985-02-19	1987-09-15	Harris Corporation	Conductivity modulated semiconductor structure
JPH0760854B2 (ja) *	1985-08-30	1995-06-28	株式会社日立製作所	一方向導通形スイツチング回路
US4989058A (en) *	1985-11-27	1991-01-29	North American Philips Corp.	Fast switching lateral insulated gate transistors
US5010034A (en) *	1989-03-07	1991-04-23	National Semiconductor Corporation	CMOS and bipolar fabrication process using selective epitaxial growth scalable to below 0.5 micron
WO1994005042A1 (en) *	1992-08-14	1994-03-03	International Business Machines Corporation	Mos device having protection against electrostatic discharge

1970
- 1970-02-19 DE DE19702007627 patent/DE2007627B2/de active Granted
- 1970-12-24 JP JP45118458A patent/JPS504555B1/ja active Pending
1971
- 1971-02-18 US US00116494A patent/US3788904A/en not_active Expired - Lifetime
- 1971-04-19 GB GB20053/71A patent/GB1291682A/en not_active Expired

Also Published As

Publication number	Publication date
US3788904A (en)	1974-01-29
GB1291682A (en)	1972-10-04
JPS504555B1 (de)	1975-02-20
DE2007627B2 (de)	1973-03-22
DE2007627A1 (de)	1971-09-02

Publication	Publication Date	Title
DE2007627C3 (de)	1973-10-11
AU2044470A (de)	1972-03-30
AU1473870A (de)	1971-11-11
AU1517670A (de)	1971-11-18
AU1336970A (de)	1971-10-07
AU2130570A (de)	1972-04-27
AU1716970A (de)	1972-01-06
AU1833270A (de)	1972-02-10
AU2017870A (de)	1972-03-23
AU1326870A (de)	1971-10-28
AU2085370A (de)	1972-04-13
AR195465A1 (de)	1973-10-15
AU1832970A (de)	1972-02-03
AU2061170A (de)	1972-04-13
AU1872870A (de)	1972-02-17
AU2144270A (de)	1972-04-27
AU2131570A (de)	1972-04-27
AU2130770A (de)	1972-04-27
AU1328670A (de)	1971-10-07
AU2119370A (de)	1972-04-20
AU2115870A (de)	1972-04-20
AU2112570A (de)	1972-04-20
AU1343870A (de)	1971-10-07
AU1879170A (de)	1972-02-17
AU1581370A (de)	1971-12-09

Legal Events

Date	Code	Title
1973-10-11	C3	Grant after two publication steps (3rd publication)
1977-12-31	E771	Valid patent as to the heymanns-index 1977, willingness to grant licences
1978-01-05	EHJ	Ceased/non-payment of the annual fee