DE19655310B4 - Adhesively bonding lead frame of semiconductor component to heat sink - using cured epoxy resin layer and thermoplastic material or partly cured epoxy! resin - Google Patents
Adhesively bonding lead frame of semiconductor component to heat sink - using cured epoxy resin layer and thermoplastic material or partly cured epoxy! resin Download PDFInfo
- Publication number
- DE19655310B4 DE19655310B4 DE19655310A DE19655310A DE19655310B4 DE 19655310 B4 DE19655310 B4 DE 19655310B4 DE 19655310 A DE19655310 A DE 19655310A DE 19655310 A DE19655310 A DE 19655310A DE 19655310 B4 DE19655310 B4 DE 19655310B4
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- Prior art keywords
- epoxy resin
- heat sink
- layer
- lead frame
- cured epoxy
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/42—Fillings or auxiliary members in containers or encapsulations selected or arranged to facilitate heating or cooling
- H01L23/433—Auxiliary members in containers characterised by their shape, e.g. pistons
- H01L23/4334—Auxiliary members in encapsulations
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/495—Lead-frames or other flat leads
- H01L23/49537—Plurality of lead frames mounted in one device
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- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/495—Lead-frames or other flat leads
- H01L23/49568—Lead-frames or other flat leads specifically adapted to facilitate heat dissipation
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- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L24/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L24/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
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- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
- H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
- H01L2224/29001—Core members of the layer connector
- H01L2224/29099—Material
- H01L2224/2919—Material with a principal constituent of the material being a polymer, e.g. polyester, phenolic based polymer, epoxy
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- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
- H01L2224/321—Disposition
- H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/32245—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
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- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
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- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
- H01L2224/491—Disposition
- H01L2224/4912—Layout
- H01L2224/49171—Fan-out arrangements
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- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73251—Location after the connecting process on different surfaces
- H01L2224/73265—Layer and wire connectors
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- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
- H01L2224/838—Bonding techniques
- H01L2224/8385—Bonding techniques using a polymer adhesive, e.g. an adhesive based on silicone, epoxy, polyimide, polyester
- H01L2224/83885—Combinations of two or more hardening methods provided for in at least two different groups from H01L2224/83855 - H01L2224/8388, e.g. for hybrid thermoplastic-thermosetting adhesives
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- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/42—Wire connectors; Manufacturing methods related thereto
- H01L24/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L24/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
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- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/42—Wire connectors; Manufacturing methods related thereto
- H01L24/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L24/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
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- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/00014—Technical content checked by a classifier the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
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- H—ELECTRICITY
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- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01005—Boron [B]
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- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01013—Aluminum [Al]
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- H—ELECTRICITY
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- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01029—Copper [Cu]
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- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01068—Erbium [Er]
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- H01L2924/01082—Lead [Pb]
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- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/06—Polymers
- H01L2924/0665—Epoxy resin
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/181—Encapsulation
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- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
Abstract
Description
Die Erfindung betrifft einen Halbleiterkomponentensatz nach dem Oberbegriff des Anspruchs 1.The The invention relates to a semiconductor component set according to the preamble of claim 1.
Bisher ist es üblich, bei einer Halbleiterkomponente den Halbleiterchip mit einem Kühlbarren zu verkleben, den Kühlbarren mit dem Leiterrahmen mittels eines beidseitig adhäsiv gemachten Polyimidbandes zu verkleben und dann den Chip über Drähte mit dem Leiterrahmen elektrisch zu verbinden. Die ganze Komponente wird dann in eine Vergußmasse eingebettet. Der Kühlbarren kann nach außen freiliegend ausgebildet sein, so daß er dann mit einer Wärmesenke verbunden werden kann, oder er kann ebenfalls vollständig von der Vergußmasse umhüllt sein. Der Kühlbarren dient dazu, innerhalb des Chips während dessen Betrieb entwickelte Wärme nach außen abzuführen. Der Kühlbarren besteht typischerweise aus einem Metall, wie Kupfer oder Aluminium, mit hoher thermischer Leitfähigkeit. Er leitet die Wärme an die Umgebung ab oder auch an die nach außen führenden Teile des Leiterrahmens.So far it is usual, in a semiconductor component, the semiconductor chip with a cooling bar to glue the cooling bars with the lead frame by means of a double-sided adhesive Polyimide tape to glue and then the chip via wires to the lead frame electrically connect to. The whole component is then embedded in a potting compound. The cooling bar can go outside be exposed, so that he then with a heat sink can be connected, or he can also completely from the potting compound to be wrapped. The cooling bar serves to evolve within the chip during its operation Dissipate heat to the outside. Of the cooling bars typically consists of a metal, such as copper or aluminum, with high thermal conductivity. He passes the heat to the environment from or to the leading parts of the leadframe.
Das Polyimidband, das für die Verbindung des Kühlkörpers mit dem Leiterrahmen verwendet wird, ist typischerweise rings um den Umfang der oberen Oberfläche des Kühlkörpers angeordnet. Die Leiter des Leiterrahmens werden auf der anderen Seite des Polyimidbandes positioniert, und nachdem der Kühlkörper mit dem Leiterrahmen verbunden worden ist, wird der Chip auf dem zentralen Bereich der oberen Oberfläche des Kühlkörpers unter Verwendung eines Chipbefestigungsklebers angebracht. Das Polyimidband hält den Kühlkörper und den Leiterrahmen in festgelegter Relativposition, wenn die Vergußmasse um die verschiedenen Elemente der Halbleiterkomponente aufgebracht wird.The Polyimide tape for that the connection of the heat sink with The lead frame used is typically around the Circumference of the upper surface arranged the heat sink. The conductors of the lead frame become on the other side of the polyimide tape positioned, and after the heat sink with has been connected to the lead frame, the chip is on the central Area of the upper surface of the heat sink below Use of a die attach adhesive attached. The polyimide tape Hold the Heat sink and the Lead frame in fixed relative position when the potting compound around the different elements of the semiconductor component applied becomes.
Das Polyimidband ist wärmeleitend, jedoch elektrisch isolierend. Im Ergebnis wird Wärme, die von dem Kühlkörper aufgenommen worden ist, durch das Polyimidband auf den Leiterrahmen übertragen. Da das Polyimidband jedoch elektrisch isolierend ist, schließt es nicht die verschiedenen Leiter des Leiterrahmens kurz.The Polyimide tape is thermally conductive, but electrically insulating. As a result, heat is absorbed by the heat sink transferred through the polyimide tape on the lead frame. There however, the polyimide tape is electrically insulating, it does not close the different ladder ladder short.
Um den Kühlkörper mit dem Leiterrahmen zu verbinden, wird die auf einer Seite des Polyimidbandes angebrachte adhäsive Schicht auf dem Kühlkörper plaziert, womit das Polyimidband auf dem Kühlkörper befestigt wird. Danach wird der Leiterrahmen auf der anderen adhäsiven Schicht des Polyimidbandes positioniert, womit das Polyimidband an dem Leiterrahmen festgelegt wird. Leiterrahmen und Kühlkörper werden dann zusammengespannt, und das Polyimidband wird erhitzt, wodurch die adhäsiven Schichten ausgehärtet werden und den Leiterrahmen mit dem Kühlkörper verbinden. Der Leiterrahmen muß auf der adhäsiven Schicht, kurz nachdem das Polyimidband auf dem Kühlkörper befestigt worden ist, aufgebracht werden, um zu verhindern, daß die freiliegende adhäsive Schicht durch Aussetzung der Umgebungsluft kontaminiert wird.Around with the heat sink connecting to the lead frame becomes that on one side of the polyimide tape attached adhesive Layer placed on the heat sink, attaching the polyimide tape to the heat sink becomes. Thereafter, the lead frame on the other adhesive layer positioned the polyimide tape, whereby the polyimide tape on the lead frame is determined. Lead frame and heat sink are then clamped together, and the polyimide tape is heated, whereby the adhesive layers hardened and connect the lead frame to the heat sink. The lead frame must be on the adhesive Layer shortly after the polyimide tape has been attached to the heat sink, be applied to prevent the exposed adhesive layer is contaminated by exposure to ambient air.
Das Polyimidband ist relativ teuer, weil die adhäsiven Schichten auf jede Seite der Polyimidschicht auflaminiert werden müssen. Wenn darüber hinaus das Polyimidband unrichtig zwischen dem Kühlkörper und dem Leiterrahmen eingespannt wird, können Spalten zwischen der adhäsiven Schicht und dem Kühlkörper und/oder zwischen der anderen adhäsiven Schicht und dem Leiterrahmen entstehen. Im Ergebnis kann eine schlechte Haftung zwischen Kühlkörper und Leiterrahmen gebildet werden. Dieses Problem wird noch verschärft, indem das Polyimidband eine Tendenz zu Verwerfungen hat, was zu einer nicht optimalen Verbindung zwischen Leiterrahmen und Kühlkörper führen kann. Zusätzlich muß das Polyimidband eine Minimaldicke haben, typischerweise mehr als 0,025 mm, damit eine Folie gebildet werden kann. Mit zunehmender Dicke der Polyimidschicht wird die Fähigkeit des Polyimidbandes verringert, Wärme abzuleiten.The Polyimide tape is relatively expensive because the adhesive layers on each side have to be laminated on the polyimide layer. If beyond that the polyimide tape is improperly clamped between the heat sink and the lead frame will, can Gaps between the adhesive Layer and the heat sink and / or between the other adhesive Layer and the lead frame arise. The result can be a bad one Adhesion between heat sink and Lead frame are formed. This problem is exacerbated by the polyimide tape has a tendency to warp, resulting in a can not lead optimal connection between the lead frame and heat sink. additionally that must be Polyimide tape have a minimum thickness, typically more than 0.025 mm, so that a film can be formed. With increasing thickness the polyimide layer becomes the ability of the polyimide tape reduces heat derive.
Aufgabe der Erfindung ist es, einen Halbleiterkomponentensatz nach dem Oberbegriff des Anspruchs 1 zu schaffen, bei dem eine Flexibilisierung des Herstellungsverfahrens entsprechender Halbleiterbauelemente erreicht wird.The object of the invention is to provide a semiconductor component set according to the preamble of claim 1, in which a flexibilization of the manufacturing process corresponding Halblei terbauelemente is achieved.
Diese
Aufgabe wird mit den Merkmalen des Anspruchs 1 gelöst. Die
Merkmale des Oberbegriffes sind aus der
Weitere Ausgestaltungen und Vorteile der Erfindung ergeben sich aus der nachfolgenden Beschreibung bevorzugter Ausführungsformen. Dabei wird auf die beigefügten Zeichnungen bezuggenommen.Further Embodiments and advantages of the invention will become apparent from the following description of preferred embodiments. This is going on the attached Drawings referenced.
Nachdem
die Epoxydharzschicht
Nachdem
die Epoxydharzschicht
Um
den Kühlkörper
Wenn
die thermoplastische adhäsive
Schicht
Der
Schmelzpunkt der thermoplastischen adhäsiven Schicht
Der
Halbleiterchip
Die
Die
Verbindungsschicht
Alternativ
kann die Verbindungsschicht
Zusätzlich zu
der Tatsache, daß die
Verbindungsschicht
Darüber hinaus
haftet die Epoxydharzpaste sehr gut an dem Kühlkörper
In
der Erfindung wird die adhäsive
Schicht
Um
den Leiterrahmen
In
einer Abwandlung dieser Ausführungsform
können
die vollständig
ausgehärtete
Epoxydharzschicht
Claims (3)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE19637285A DE19637285B4 (en) | 1995-09-19 | 1996-09-13 | Semiconductor device and method of assembling the same |
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US08/530,772 | 1995-09-19 | ||
US08/530,772 US5691567A (en) | 1995-09-19 | 1995-09-19 | Structure for attaching a lead frame to a heat spreader/heat slug structure |
DE19637285A DE19637285B4 (en) | 1995-09-19 | 1996-09-13 | Semiconductor device and method of assembling the same |
Publications (1)
Publication Number | Publication Date |
---|---|
DE19655310B4 true DE19655310B4 (en) | 2006-11-02 |
Family
ID=37085308
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE19655310A Expired - Fee Related DE19655310B4 (en) | 1995-09-19 | 1996-09-13 | Adhesively bonding lead frame of semiconductor component to heat sink - using cured epoxy resin layer and thermoplastic material or partly cured epoxy! resin |
Country Status (1)
Country | Link |
---|---|
DE (1) | DE19655310B4 (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP2597675A1 (en) * | 2011-04-05 | 2013-05-29 | Panasonic Corporation | Encapsulated semiconductor device and method for producing same |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4783428A (en) * | 1987-11-23 | 1988-11-08 | Motorola Inc. | Method of producing a thermogenetic semiconductor device |
US5208188A (en) * | 1989-10-02 | 1993-05-04 | Advanced Micro Devices, Inc. | Process for making a multilayer lead frame assembly for an integrated circuit structure and multilayer integrated circuit die package formed by such process |
-
1996
- 1996-09-13 DE DE19655310A patent/DE19655310B4/en not_active Expired - Fee Related
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4783428A (en) * | 1987-11-23 | 1988-11-08 | Motorola Inc. | Method of producing a thermogenetic semiconductor device |
US5208188A (en) * | 1989-10-02 | 1993-05-04 | Advanced Micro Devices, Inc. | Process for making a multilayer lead frame assembly for an integrated circuit structure and multilayer integrated circuit die package formed by such process |
Non-Patent Citations (1)
Title |
---|
"Verklebt Polyimid", PRONIC, Heft 1/2, 1991, S.22-23 * |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP2597675A1 (en) * | 2011-04-05 | 2013-05-29 | Panasonic Corporation | Encapsulated semiconductor device and method for producing same |
EP2597675A4 (en) * | 2011-04-05 | 2013-07-31 | Panasonic Corp | Encapsulated semiconductor device and method for producing same |
US9030003B2 (en) | 2011-04-05 | 2015-05-12 | Panasonic Intellectual Property Management Co., Ltd. | Encapsulated semiconductor device and method for manufacturing the same |
US9240369B2 (en) | 2011-04-05 | 2016-01-19 | Panasonic Intellectual Property Management Co., Ltd. | Encapsulated semiconductor device and method for manufacturing the same |
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