DE1524785A1 - Electrically changeable matrix-shaped semi-fixed storage with thin magnetic layers - Google Patents

Description

BAD OR! C! NAL

009815 / U94

E no.

ISE / Reg. No. 3659

A.J. Judeinstein-J.K.L. Krait Case: nee Bezaguet 10-3

Title:

Electrically changeable matrix-shaped semi-fixed value memory with thin magnetic layers

List of terms used

Reference
sign Original language DJ / E translation JE / D 1 conductive layer conductive layer 2 storage film Storage layer 3 reading IiIm Reading shift U conductor 'Supervisor C. conductor Bit conductor E. inhibit conductor Inhibition ladder I. interrogation conductor Call Manager L. reading conductor Reading ladder P ₁ G storage element .Storage element t spot » luarr.etf lecl: V 009815 / U94 BATHROOM OnI-GINAL

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Claims (3)

ISE / Reg. 3659-21 claims 1. Electrically, changeable matrix-shaped semi-read-only memory, / in which each element consists of two superimposed individual thin magnetic layers, the storage layer and the reading layer, whose preferred directions are in the same direction and parallel and in which the memory layer of each element has one bit and one Word ladder, and the. Reading layer of each element is provided with one call and one reading conductor, all reading conductors being connected in series to form a single reading loop, and in which inhibition conductors are provided parallel to the reading conductors for bit-serial reading and in which there is also an electrically conductive intermediate layer between the two magnetic layers is applied, characterized in that the inhibition conductors (E1 ... E3) run parallel to the individual conductors of the reading loop (L) as a straight conductor and that for reading a crossing point, two pulses successively on the associated interrogation conductor (I) and in front of the Trailing edge of the pulses are given to all except the associated inhibition conductor at the first pulse, and to all inhibition conductor pulses at the second pulse and that a circuit is provided for comparing the read signals occurring on the reading conductor (L) at the leading edge of the two interrogation pulses. Me / Sd 4/25/67 ..- ■ ...: -.- _ ₂₂ _ 00 98157U94 ,; Y 'O c 0 Ιοί / Reg. 5639 - 22 - 2. Storage of ρ memory arrays according ioispruch 1, characterized in that the bits of a '"each map to the same location each plane are accommodated and that the ρ bits are interrogated in parallel upon reading and that the mutually corresponding query and Inhibitionsleiter the levels ρ are connected in series. 3. Memory according to -mspruch 1 and 2, characterized in that the ^ storage layer (2) is isotropic and has a large coercive force, and that the direction of the remanent magnetization of the storage layer is parallel to the easy axis of the reading layer.