DE1446067A1 - Process for polishing semiconductor wafers with simultaneous application of an electrolytic and a mechanical treatment - Google Patents
Process for polishing semiconductor wafers with simultaneous application of an electrolytic and a mechanical treatmentInfo
- Publication number
- DE1446067A1 DE1446067A1 DE19621446067 DE1446067A DE1446067A1 DE 1446067 A1 DE1446067 A1 DE 1446067A1 DE 19621446067 DE19621446067 DE 19621446067 DE 1446067 A DE1446067 A DE 1446067A DE 1446067 A1 DE1446067 A1 DE 1446067A1
- Authority
- DE
- Germany
- Prior art keywords
- semiconductor
- electrolytic
- semiconductor body
- semiconductor wafers
- simultaneous application
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title claims description 29
- 238000011282 treatment Methods 0.000 title claims description 10
- 235000012431 wafers Nutrition 0.000 title claims description 10
- 238000000034 method Methods 0.000 title claims description 9
- 238000005498 polishing Methods 0.000 title description 10
- 239000007800 oxidant agent Substances 0.000 claims description 5
- 239000000126 substance Substances 0.000 claims description 4
- 239000000835 fiber Substances 0.000 claims description 3
- 239000000654 additive Substances 0.000 claims 1
- 230000000996 additive effect Effects 0.000 claims 1
- 241001233037 catfish Species 0.000 claims 1
- 239000004745 nonwoven fabric Substances 0.000 claims 1
- 235000012976 tarts Nutrition 0.000 claims 1
- PEDCQBHIVMGVHV-UHFFFAOYSA-N Glycerine Chemical compound OCC(O)CO PEDCQBHIVMGVHV-UHFFFAOYSA-N 0.000 description 5
- 239000010410 layer Substances 0.000 description 4
- 238000007517 polishing process Methods 0.000 description 3
- 239000000725 suspension Substances 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 2
- 235000011187 glycerol Nutrition 0.000 description 2
- 239000011810 insulating material Substances 0.000 description 2
- 239000007788 liquid Substances 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 238000005554 pickling Methods 0.000 description 2
- XSTXAVWGXDQKEL-UHFFFAOYSA-N Trichloroethylene Chemical group ClC=C(Cl)Cl XSTXAVWGXDQKEL-UHFFFAOYSA-N 0.000 description 1
- FZNCGRZWXLXZSZ-CIQUZCHMSA-N Voglibose Chemical compound OCC(CO)N[C@H]1C[C@](O)(CO)[C@@H](O)[C@H](O)[C@H]1O FZNCGRZWXLXZSZ-CIQUZCHMSA-N 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 238000005452 bending Methods 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 239000011247 coating layer Substances 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 238000004090 dissolution Methods 0.000 description 1
- 239000003792 electrolyte Substances 0.000 description 1
- 238000000866 electrolytic etching Methods 0.000 description 1
- 239000000314 lubricant Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 238000004381 surface treatment Methods 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
- 210000003462 vein Anatomy 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/30625—With simultaneous mechanical treatment, e.g. mechanico-chemical polishing
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
- B24B37/042—Lapping machines or devices; Accessories designed for working plane surfaces operating processes therefor
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25F—PROCESSES FOR THE ELECTROLYTIC REMOVAL OF MATERIALS FROM OBJECTS; APPARATUS THEREFOR
- C25F3/00—Electrolytic etching or polishing
- C25F3/16—Polishing
- C25F3/30—Polishing of semiconducting materials
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25F—PROCESSES FOR THE ELECTROLYTIC REMOVAL OF MATERIALS FROM OBJECTS; APPARATUS THEREFOR
- C25F7/00—Constructional parts, or assemblies thereof, of cells for electrolytic removal of material from objects; Servicing or operating
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- Metallurgy (AREA)
- Materials Engineering (AREA)
- Electrochemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Physics & Mathematics (AREA)
- Mechanical Engineering (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
Description
yg/PM/ii - w 3597yg / PM / ii - w 3597
"Yerfahren sum Polieren von Halbleiterscheiben unter gleichzeitiger Anwendung einer elektrolytlachen und einer Mechanischen Behandlung""Yerfahren sum polishing of semiconductor wafers with simultaneous application one electrolyte pool and one mechanical Treatment"
Die Erfindung betrifft ein Terfanren zum Polieren von Halbleitericheiben unter gleichseitiger Anwendung einer elektrolytischen und einer Mechanischen Behandlung·The invention relates to a Terfanren for polishing Semiconductor wafers with simultaneous application of an electrolytic and a mechanical treatment
: Sine der wichtigsten Toraussetzungen für die ErBeugung τοη ' DiffusionsMasken und Ipitaxial-Schiehten auf Halbleitermaterialien ist eine vorhergehende qptiaal β Oberflächenbehandlung der Halbleiterscheiben. Sine Oberfläche, die noch Irat β spuren, Itsgruben oder eine nicht plane Auebildung seigt, führt su hohen Ausfallquoten« beispielsweise bei der Herstellung von Planartransistoren und Miniaturisierten Sehaltungen.: Sine of the most important gate exposures for the inflection τοη Diffusion masks and ipitaxial layers on semiconductor materials is a previous qptiaal β surface treatment of the semiconductor wafers. Sine surface that still Irat β traces, its pits or a non-planar formation seigt, leads to high default rates «for example in the Manufacture of planar transistors and miniaturized structures.
üsher worden Halbleiteroberflachen alt Hilfe von drei verschiedenen Terfahren behandelt!Over the years, semiconductor surfaces have been using three different methods Terfahren treated!
1· Mechanisches Polieren.'1 · Mechanical polishing. '
ÜMhteilt Kiefen und Polierpastenreste bleiben auf der Oberfläche des Halbleiterkörpers surück.ÜMhteilt pits and polishing paste residues remain on the Surface of the semiconductor body surück.
• 2 BAD ORIGINAL• 2 ORIGINAL BATHROOMS
Neue Unierlagen (Art. 7 % l Abs. 2 Nr. l Satz 3 des Änderunosaee. v. 4- 3New Unierlagen (Art. 7 % I, Paragraph 2, No. 1, Clause 3 of the Amendunosaee. V. 4-3
909804/1054909804/1054
- 2 - W 3597 '- 2 - W 3597 '
2. Elektrolytisches It*en. Der Halbleiterkörper wird ale Anode geschaltet, an seiner Oberfläche bildet sich eine Oxydschicht, die durch einen ehemischen Lösung β Vorgang wieder entfernt wird·2. Electrolytic It * en. The semiconductor body is ale Connected to the anode, an oxide layer forms on its surface, which is caused by a former dissolution β process is removed again
Nachteil: Beim Abtragen größerer Halbleiterschichtdicken (über U) bilden sieh Oberflächenstrukturen aus«Disadvantage: When removing thicker semiconductor layers (over U), surface structures form «
3* Chemisches Beizen mit Oxydationsmitteln« Nachteil! Oberflächenstrukturen ähnlich wie beim elektrolytischen Ätzen.3 * Chemical pickling with oxidizing agents «Disadvantage! Surface structures similar to electrolytic Etching.
und das elektrolytisch« Itsen gleichzeitig durchgeführt werden.and the electrolytic process can be carried out at the same time.
Der Erfindung liegt die Aufgabe zugrunde, ein Verfahren anzugeben» das su besonders hochwertigen Balblelteroberffcäehen führt.The invention is based on the object of specifying a method » which leads to particularly high-quality ball liner surfaces.
Mt Erfindung besteht bei eines Verfahren sum Polieren. Ton Halbleiterscheiben unter gleichzeitiger Anwendung einer elektrolytisch en und einer mechanischen Behandlung darin, daß im gleichen Arbeltsgang mit den genannten Behandlungen ein· chemische Beizung der Halbleiterscheiben durch Zusatz einte Oxydationsmittels zu dem für die Behandlung vorgesehenen elektrolytlsohen Bad vorgenommen wird·The invention consists in a method of polishing. volume Semiconductor wafers with simultaneous application of an electrolytic and a mechanical treatment in that in the same work cycle with the mentioned treatments a · chemical pickling of the semiconductor wafers by adding an oxidizing agent to that intended for the treatment electrolytic bath is carried out
BADBATH
909804/105 4909804/105 4
- 3 - W 3597- 3 - W 3597
Beim Poltren insbesondere von Siliziumsciieibeii hat sich di· Verwendung eines Badee bewährt» das Glycerin ale Schmiermittel, IEL HFg el* Oxydlösungsaittel und HBO« als chemisches Oxydationsmittel enthält» Ein· spezielle ZuBammensetsung de· lade· enthält 500 ml Glyzerin, 500 al H2O, 6 gr BH^ Bf2 und 0,2 al BBOj auf rund 1 Liter Badflüesigkeit.When Poltren particular Siliziumsciieibeii is di · Application has proven a Badee "the glycerin ale lubricants, IEL HFG el * Oxydlösungsaittel and HBO" contains a chemical oxidizing agent "A · special ZuBammensetsung de · invite · contains 500 ml of glycerol, 500 al H2O , 6 gr BH ^ Bf 2 and 0.2 al BBOj to around 1 liter of bath liquid.
Zur Burehführung de· erfindungsgemäßen Verfahren· ist ·· notwendig, di· Halbleiterscheiben elektrisch iu kontaktieren und die Kontaktierung so vorzunehmen, daß nach Beendigung des Poliervorgangee die Halbleiterscheibe ohne Beschädigung wieder abgelöst werden kann· Is hat eich su diesem Zweok als besondere vorteilhaft erwiesen» tie Halbleiterscheiben auf der Rückseite mit einer metallischen Io η takt suspension, beispielsweise mit Mitteln, die unter dem firftftunamen "Xontaktargan" oder "Attromal 35" bekannt geworden Bind, su überstreichen, »ach dem Antrocknen dieser Xontaktsuspension ist es dann nur noeh notwendig, einen Kontaktstreifen, beistfüesweiee ein dünn·· Biokelscheibchen, das über eine metallische Leitung mit dem Anodenkontakt der Poliervorrichtung verbunden ist, leicht auf die Kacfcaktierungs schicht auf sudrücken· »ach dem Polieren ist di· Kontaktsuspension in !trichlorethylen leicht lösbar.For bureheading the method according to the invention is necessary to electrically contact the semiconductor wafers and to make the contact so that after the end of the polishing process the semiconductor wafer without damage can be replaced again · Is has this purpose as proved particularly advantageous »tie semiconductor wafers on the back with a metallic Io η takt suspension, for example with funds under the company name "Xontaktargan" or "Attromal 35" became known Bind, see below overline, “After this contact suspension has dried on, it's just that if necessary, a contact strip, one by one thin ·· bio-goblet, which over a metallic pipe is connected to the anode contact of the polishing device, gently back onto the coating layer on the surface Polishing is easy with the contact suspension in trichlorethylene solvable.
BAD ORIGINALBATH ORIGINAL
- M- - W 599?- M- - W 599?
Ση folgenden «oll nun Als Ausführungebalsplel ·1η· bewährte Terriehtung zur Ihirohführung des erfindungsgeaäßen Te*· fahrens anhand dar Zeichnungen dargestellt werden»Ση following «oll now proven as a design balsplel · 1η · Terriehtung for the introduction of the Te * according to the invention can be shown on the basis of the drawings »
figur 1 seigt «Ina rotierende Krelss^haibe 1 alt sektcrf6raigen oder loeh-lhirchbrüeaen 2f di« als Sathoda gaschal» tat ist« Dieaa Zraies3hall»a trägt aa ilira? Obarfläoha aln fasarrlias 3 aua iTat&atiaoham laaans, mit alnar Dickt von oa. 50 1· Saa faearrllaa 1 ist glai^nsaitlg saenaMsoiiae Hollandttel und Baparata?» Bia su polierendtn Halbleiterkörper 4» dia ala Anode geschultefc aln4t sind in einer Auf« naiuiavorrieiitung 5 enthalten, dia dia Halbleiterkörper 4 laicht gegen das yaeerrliea 3 drückt und eieh in Rotation entgegeagesetst sur Brahriohtung dar fitalsachel%e 1 befindet« Unterhalb der £reieß@helbe 1 iat eine Hltraphotlampe 6 Tor*Figure 1 shows "Ina rotating Krelss ^ haibe 1 old sektcrf6raigen or loeh-lhirchbrüeaen 2 f di" als Sathoda gaschal "tat is" Dieaa Zraies3hall "a wears aa ilira? Obarfläoha aln fasarrlias 3 aua iTat & atiaoham laaans, with alnar Dickt from oa. 50 1 · Saa faearrllaa 1 is glai ^ nsaitlg saenaMsoiiae Hollandttel and Baparata? » Bia su polierendtn semiconductor body 4 "dia ala anode trained fc aln4 t are contained in a" naiuiavorrieiitung 5, the semiconductor body 4 spawns against the yaeerrliea 3 presses and is opposite in rotation on the Brahriohtung the fitalsachel% e 1 is located "below the right helbe 1 iat a thermaphot lamp 6 gate *
gesehen ι 5|e durch, die Durohbrüche 2 und das faservlies 3 hindureh die s« polierenden H&lblelt^rflä@hen Meuohtat· Sie ladflüssigkelt gelangt mittels einer Sropfvorriohtung 7 auf das faservlies und durchfeuchtet diese»·seen through ι 5 | e through, the Durohbrbruch 2 and the fiber fleece 3 behind the s «polishing cover surface Meuohtat · It is loaded liquid by means of a drop device 7 on the fiber fleece and soaks it» ·
Ic iat bei« Polieren von Halbleiterkiirpern des a-typs für das hoher Olarflftehenftttem wichtig« daB währamd desIc iat at "polishing a-type semiconductor bodies for that high level of awareness is important «that during the
Uoht auf den lalbloiterkerper trifft« Xn* felge dar aehaltuag des Halbleiterkörper* als Anode bildet tiah a» Amt m% pelieranda», Oberf liefet eine «ü«ae p«fl«hi«htUoht on the lalbloiterkerper meets "Xn * rim aehaltuag of the semiconductor body * as anode forms tiah a" office m% pelieranda ", Oberf delivers a" u "ae p" fl "ht
- S-- S-
BAD ORfQfWALBAD ORfQfWAL
' 909804/105Λ'909804 / 105Λ
- 5 - w 3597- 5 - w 3597
au·, welch· sur SntBtehung «ines p-n-Übergangs führt· in energetisch ausgeselohneten Zentren, beispielsweise «α Tersetsungen im Metall, erfolgen während de· Foliervorgange· Durchbrechungen der p-8ehicht, was Itsgruben verur-•acht, Bas einTallende Lloht eraeugt Is Kristall Iriierpaar«t dl· die Ausbildung der genannten p-Sohleht Terklndern,no matter what the need for a pn transition leads to energetically rewarded centers, for example breakdowns in metal, breakthroughs in the p-layer take place during the foiling process, which causes pits, Basen Lloht discovers Crystal Iriierpaar « t dl · the formation of the mentioned p-soles,
Bei der Bearbeitung τοη Halbleitern de« p-Typa spielt die·· pHBtenicht eine geringe Solle·When processing τοη semiconductors de «p-Typa, the ·· pHBt not a low should
Figur 2 zeigt ein Aueführungabeiepiel der AufnahmeTorriehtung 5 au· figur 1 in Grund« und Aufriss· In der AufnanB·*·*·· richtung ^ sind Aufnahmedurchbrüofce 8 vorgesehen, in dl· Aufnahmeblöoke 9» die jeweils Halbleiterseheibea4 tragen, ein· geführt werden. Al· Aufnahmeblöoke 9 werden durch Bieg·· federn 10 gleichseitig »eehanisoh ausgedrückt und elektrisch kontajctiert· Durch Zuführung τοη Anodemspannungen unterschiedlicher öröße an die liegefederm 10 aus Schleifringen 11, die an der Mittelachse der AufnahaeTorriohtung 5 angeortoet sind, iat es BÖglioh, Halbleiterkörper verschiedenen Leitfähigkeitsgrades, aber gleichen Leitfähigkeit^· gleichseitig su behandeln· Sie Aufnahaevorriohtung $ beeteht au· ein·« Isoliermaterial. FIG. 2 shows an embodiment of the receiving door 5 au · Figure 1 in ground «and elevation · In the AufnanB · * · * ·· direction ^ are receiving breakthroughs 8 provided, in dl · receiving blocks 9 »each of which has a semiconductor labelea4, a · be guided. Al mounting blocks 9 are bent by bending springs 10 equilateral »eehanisoh expressed and electrical Contacted · By supplying τοη different anode voltages öröhe to the Liegefederm 10 from slip rings 11, the are located on the central axis of the mount 5, iat es BÖglioh, semiconductor bodies with different degrees of conductivity, but same conductivity ^ · equilateral see below treat the receptacle protection with an insulating material.
BAD ORIGINAL 909804/1054ORIGINAL BATH 909804/1054
- 6 - W 3597- 6 - W 3597
figur 3 »»igt einen Aufnahmeblook 9 im Schnitt. Der Aufnahmebtafc besteht ebenfalls au· Imoliermftterial. Auf der Oberseite let dtr Halbleiterkörper 4 tingepaast und durch ein KL*b«aitt*l 12 befestigt» Duroh. «in· Mittelbohrung im Aufnahmtblook wird βίο. Koataktplättoiitis. 13 aittels tintr Schraubtnftdsr an den EtlblelterkSrper 4 gedrüokt. in den anderen fiadt dtr Sonraubtafeder ist «in· weiter« Kontaktplatte 15 vorgesehen, auf die die Biegefeder 10 (sehematiseh dargestellt) drückt.Figure 3 shows a section of a receiving bloom 9. The admission tab also consists of insulating material. On the top let dtr semiconductor body 4 tingepaast and through a KL * b "aitt * l 12 attached" Duroh. «In · central hole in the receptacle look becomes βίο. Coatactitis. 13 aittels tintr screwdriver on the EtlblelterkSrper 4 pressed. in the other fiadt dtr Sonraubtafeder is «in · next« contact plate 15 provided on which the spiral spring 10 (shown schematically) presses.
909804/1054909804/1054
Claims (2)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DET0022026 | 1962-04-27 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| DE1446067A1 true DE1446067A1 (en) | 1969-01-23 |
Family
ID=7550368
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE19621446067 Pending DE1446067A1 (en) | 1962-04-27 | 1962-04-27 | Process for polishing semiconductor wafers with simultaneous application of an electrolytic and a mechanical treatment |
Country Status (1)
| Country | Link |
|---|---|
| DE (1) | DE1446067A1 (en) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0074406A1 (en) * | 1981-03-10 | 1983-03-23 | Shibayama Kikai Co., Ltd. | Spindle tilting control device for plane and spherical rotary grinding machine, fine grinding machine, lapping machine, and polishing machine |
| US5110428A (en) * | 1989-09-05 | 1992-05-05 | Wacker-Chemitronic Gesellschaft Fur Elektronik-Grundstoffe Mbh | Process and apparatus for double-sided chemomechanical polishing of semiconductor wafers and semiconductor wafers obtainable thereby |
| WO1995025186A1 (en) * | 1994-03-17 | 1995-09-21 | Hahn-Meitner-Institut Berlin Gmbh | Surface treatment process for flat silicon bodies |
| WO1998019827A1 (en) * | 1996-11-08 | 1998-05-14 | Northrop Grumman Corporation | Wet etch for silicon carbide |
-
1962
- 1962-04-27 DE DE19621446067 patent/DE1446067A1/en active Pending
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0074406A1 (en) * | 1981-03-10 | 1983-03-23 | Shibayama Kikai Co., Ltd. | Spindle tilting control device for plane and spherical rotary grinding machine, fine grinding machine, lapping machine, and polishing machine |
| EP0074406A4 (en) * | 1981-03-10 | 1984-09-05 | Shibayama Kikai Co Ltd | Spindle tilting control device for plane and spherical rotary grinding machine, fine grinding machine, lapping machine, and polishing machine. |
| US5110428A (en) * | 1989-09-05 | 1992-05-05 | Wacker-Chemitronic Gesellschaft Fur Elektronik-Grundstoffe Mbh | Process and apparatus for double-sided chemomechanical polishing of semiconductor wafers and semiconductor wafers obtainable thereby |
| WO1995025186A1 (en) * | 1994-03-17 | 1995-09-21 | Hahn-Meitner-Institut Berlin Gmbh | Surface treatment process for flat silicon bodies |
| WO1998019827A1 (en) * | 1996-11-08 | 1998-05-14 | Northrop Grumman Corporation | Wet etch for silicon carbide |
| US5911864A (en) * | 1996-11-08 | 1999-06-15 | Northrop Grumman Corporation | Method of fabricating a semiconductor structure |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| SH | Request for examination between 03.10.1968 and 22.04.1971 |