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DE112006003439T5 - A loaded NMOS transistor with group III-N source / drain regions - Google Patents

A loaded NMOS transistor with group III-N source / drain regions Download PDF

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DE112006003439T5
DE112006003439T5 DE112006003439T DE112006003439T DE112006003439T5 DE 112006003439 T5 DE112006003439 T5 DE 112006003439T5 DE 112006003439 T DE112006003439 T DE 112006003439T DE 112006003439 T DE112006003439 T DE 112006003439T DE 112006003439 T5 DE112006003439 T5 DE 112006003439T5
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inn
channel
regions
group iii
transistor
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DE112006003439B4 (en
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Suman Beaverton Datta
Justin K. Portland Brask
Been-Yih Lake Oswego Jin
Jack T. Portland Kavalieros
Mantu K. Beaverton Hudait
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Intel Corp
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    • H—ELECTRICITY
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    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66409—Unipolar field-effect transistors
    • H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
    • H01L29/66568—Lateral single gate silicon transistors
    • H01L29/66636—Lateral single gate silicon transistors with source or drain recessed by etching or first recessed by etching and then refilled
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    • H01L21/822—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
    • H01L21/8232—Field-effect technology
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    • H01L21/8238—Complementary field-effect transistors, e.g. CMOS
    • H01L21/823807—Complementary field-effect transistors, e.g. CMOS with a particular manufacturing method of the channel structures, e.g. channel implants, halo or pocket implants, or channel materials
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    • H01L21/8232—Field-effect technology
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    • H01L21/8238—Complementary field-effect transistors, e.g. CMOS
    • H01L21/823814—Complementary field-effect transistors, e.g. CMOS with a particular manufacturing method of the source or drain structures, e.g. specific source or drain implants or silicided source or drain structures or raised source or drain structures
    • H—ELECTRICITY
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    • H01L29/66409—Unipolar field-effect transistors
    • H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
    • H01L29/66568—Lateral single gate silicon transistors
    • H01L29/66613—Lateral single gate silicon transistors with a gate recessing step, e.g. using local oxidation
    • H01L29/66628—Lateral single gate silicon transistors with a gate recessing step, e.g. using local oxidation recessing the gate by forming single crystalline semiconductor material at the source or drain location
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    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/7842—Field effect transistors with field effect produced by an insulated gate means for exerting mechanical stress on the crystal lattice of the channel region, e.g. using a flexible substrate
    • H01L29/7848—Field effect transistors with field effect produced by an insulated gate means for exerting mechanical stress on the crystal lattice of the channel region, e.g. using a flexible substrate the means being located in the source/drain region, e.g. SiGe source and drain
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    • H01L29/51—Insulating materials associated therewith
    • H01L29/517—Insulating materials associated therewith the insulating material comprising a metallic compound, e.g. metal oxide, metal silicate
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    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/933—Germanium or silicon or Ge-Si on III-V
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
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Abstract

Ein Verfahren zur Herstellung eines n-Kanal-Transistors, aufweisend:
Bilden von Gruppe-III-N-Gebieten neben einem Kanalgebiet; und
Dotieren der Gruppe-III-N-Gebiete mit einem n-Typ-Dotierstoff.A method of fabricating an n-channel transistor, comprising:
Forming group III-N regions adjacent to a channel region; and
Doping the group III-N regions with an n-type dopant.

Figure 00000001
Figure 00000001

Description

Bereich der ErfindungField of the invention

Die Erfindung bezieht sich auf das Gebiet von Transistoren mit Zug- und Druckbelastung auf den Kanalgebieten.The The invention relates to the field of transistors with tensile and pressure load on the channel areas.

Stand der TechnikState of the art

Es wird anerkannt, dass eine verbesserte Leistungsfähigkeit von PMOS-Transistoren erreicht wird, wenn eine einachsige Druckbelastung direkt auf den Kanal des Transistors von z. B. eingebetteten Silizium-Germanium(SiGe)-Source-/Drain-Gebieten vermittelt wird. Gleichermaßen ist ebenfalls bekannt, dass eine erhöhte Leistungsfähigkeit eines NMOS-Transistors erreicht wird, wenn eine einachsige Zugbelastung auf seinen Kanal vermittelt wird. In einigen Fällen wird diese Zugbelastung durch eine Siliziumnitrid-Deckschicht erreicht, wie in Verbindung mit 1 diskutiert werden wird. Siehe zusätzlich „Sacrificial Capping Lager for Transistor Performance Enhancement", US-Seriennummer 11/174,230, angemeldet am 30. Juni 2005.It is recognized that improved performance of PMOS transistors is achieved when a uniaxial pressure load is applied directly to the channel of the transistor of e.g. Embedded silicon germanium (SiGe) source / drain regions. Likewise, it is also known that increased performance of an NMOS transistor is achieved when a uniaxial tensile load is imparted to its channel. In some cases, this tensile stress is achieved by a silicon nitride capping layer, as in conjunction with 1 will be discussed. See in addition "Sacrificial Capping Bearing for Transistor Performance Enhancement," US Serial No. 11 / 174,230, filed June 30, 2005.

Kurze Beschreibung der ZeichnungenBrief description of the drawings

1 ist eine Querschnittsansicht im Aufriss eines Substrats, die einen p-Kanal- und einen n-Kanal-Feldeffekttransistor (FET) zeigt, wie er nach dem Stand der Technik hergestellt wird. 1 FIG. 10 is a cross-sectional elevational view of a substrate showing a p-channel and n-channel field effect transistor (FET) as manufactured in the prior art. FIG.

2 ist eine Querschnittsansicht im Aufriss eines Substrats, die eine Ausführungsform der Vermittlung einer Belastung auf ein Kanalgebiet eines n-Kanals zeigt. 2 Figure 11 is a cross-sectional elevational view of a substrate showing an embodiment of imparting a load to a channel region of an n-channel.

3 ist eine Querschnittsansicht im Aufriss eines Substrats, die eine andere Ausführungsform der Vermittlung einer Zugbelastung auf das Kanalgebiet eines n-Kanals zeigt. 3 Figure 11 is a cross-sectional elevational view of a substrate showing another embodiment of imparting a tensile load to the channel region of an n-channel.

4 ist eine Querschnittsansicht im Aufriss eines Substrats, die eine Ausführungsform der Vermittlung einer Zugbelastung auf einen n-Kanal- Transistor in Verbindung mit der Herstellung eines p-Kanal-Transistors darstellt. 4 FIG. 12 is a cross-sectional elevational view of a substrate illustrating an embodiment of imparting a tensile load to an n-channel transistor in conjunction with the fabrication of a p-channel transistor. FIG.

5 ist eine Querschnittsansicht im Aufriss eines Substrats, die eine andere Ausführungsform des Vermittelns einer Zugbelastung auf einen n-Kanal-Transistor zeigt, wenn dieser in Verbindung mit einem p-Kanal-Transistor hergestellt wird. 5 Figure 10 is a cross-sectional elevational view of a substrate showing another embodiment of imparting a tensile load to an n-channel transistor when fabricated in conjunction with a p-channel transistor.

Detaillierte BeschreibungDetailed description

Ein n-Kanal-Transistor und ein Verfahren zur Herstellung des Transistors werden beschrieben, wobei eine Zugbelastung auf den Siliziumkanal vermittelt wird. In der folgenden Beschreibung werden für ein gründliches Verständnis der vorliegenden Erfindung zahlreiche spezifische Details dargelegt. Dem Durchschnittsfachmann wird klar, dass die vorliegende Erfindung auch ohne diese spezifischen Details praktiziert werden kann. In anderen Beispielen werden wohlbekannte Strukturen und Herstellungsprozesse nicht detailliert beschrieben, um die vorliegende Erfindung nicht unnötigerweise zu verschleiern.One n-channel transistor and a method of manufacturing the transistor are described, with a tensile load on the silicon channel is taught. In the following description will be for a thorough understanding Numerous specific details are set forth in the present invention. It will be apparent to one of ordinary skill in the art that the present invention even without these specific details can be practiced. In other examples become well-known structures and manufacturing processes not described in detail, not to the present invention unnecessarily to disguise.

Zunächst wird auf den Stand der Technik aus 1 Bezug genommen, in der ein p-Kanal-Transistor 10 und ein n-Kanal-Transistor 11 gezeigt sind, die auf einem Substrat 12 hergestellt sind. Die Transistoren sind durch einen Shallow-Trench-Isolationsbereich 14 getrennt. Der Transistor 10 hat ein Kanalgebiet 15, die gegen das Gate 17 durch z. B. ein High-k-Oxid 16 isoliert ist. In ähnlicher Weise ist das Kanalgebiet 20 des Transistors 11 vom Gate 23 durch das High-k-Oxid 22 getrennt. In einer Ausführungsform sind die Gate-Oxide 16 und 22 Hafniumdioxid (HfO2) oder Zirkoniumdioxid (ZrO2). Die Gates 17 und 23 können Metall-Gates mit einer so angestrebten Austrittsarbeit sein, dass eine höhere Austrittsarbeit für den Enhancement-Mode-Transistor 11 und eine niedrigere Austrittsarbeit für den Depletion-Mode-Transistor 10 genutzt wird. In einer anderen Ausführungsform wird ein Siliziumdioxid-Gate-Isolator mit den aus Polysilizium hergestellten Gates verwendet.First, the state of the art 1 Reference is made in which a p-channel transistor 10 and an n-channel transistor 11 shown on a substrate 12 are made. The transistors are through a shallow trench isolation region 14 separated. The transistor 10 has a channel area 15 that against the gate 17 by z. B. a high-k oxide 16 is isolated. Similarly, the channel area 20 of the transistor 11 from the gate 23 through the high-k oxide 22 separated. In one embodiment, the gate oxides are 16 and 22 Hafnium dioxide (HfO 2 ) or zirconium dioxide (ZrO 2 ). The gates 17 and 23 For example, metal gates may have such a desired work function that a higher work function for the enhancement mode transistor 11 and a lower work function for the depletion mode transistor 10 is being used. In another embodiment, a silicon dioxide gate insulator is used with the gates made of polysilicon.

Wie früher angemerkt, ist bekannt, dass das unter Druck Setzen des Kanals 15 des Transistors 10 einen Transistor mit einer besseren Leistungsfähigkeit liefert. Zu diesem Zweck wird das Substrat an den Gebieten 24 und 25 geätzt und SiGe epitaktisch gewachsen. Der Gitterversatz zwischen SiGe und Si verursacht, dass die sich daraus ergebenden Source- und Drain-Gebiete unter Druck stehen und dadurch Druck auf das Kanalgebiet 15 ausüben. Wie in 1 gezeigt, sind die Source- und Drain-Gebiete mit einem p-Typ-Dotierstoff dotiert, wie z. B. mit Bor.As noted earlier, it is known that pressurizing the channel 15 of the transistor 10 provides a transistor with better performance. For this purpose, the substrate becomes the areas 24 and 25 Etched and grown SiGe epitaxially. The lattice offset between SiGe and Si causes the resulting source and drain regions to be under pressure, thereby putting pressure on the channel region 15 exercise. As in 1 shown, the source and drain regions are doped with a p-type dopant, such as. With boron.

Um die Zugbelastung im n-Kanal-Transistor 11 verfügbar zu machen, wird eine hoch zugbelastbare Siliziumnitrid-Deckschicht 30 verwendet, um eine einachsige Zugbelastung auf den Kanal 20 durch die Source- und Drain-Gebiete des Transistors 11 zu vermitteln. Diese hoch zugbelastbare Deckschicht deckt, wie in 1 gezeigt, ebenfalls den p-Kanal-Transistor ab und verschlechtert etwas seine Lochbeweglichkeit, was jedoch nicht mit der Gesamtzunahme der Leistungsfähigkeit zu vergleichen ist, die durch das unter Zugbelastung Setzen der Enhancement-Mode-Transistoren erhalten wird.To the tensile load in the n-channel transistor 11 becomes a high tensile silicon nitride capping layer 30 used a uniaxial tensile load on the channel 20 through the source and drain regions of the transistor 11 to convey. This high-tensile cover layer covers, as in 1 1, also degrades the p-channel transistor and somewhat degrades its hole mobility, which, however, is not to be compared with the overall increase in performance achieved by the strain applied setting of the enhancement mode transistors.

Während die Transistordichten weiter zunehmen und der Abstand der Gates weiterhin abnimmt, findet natürlich eine Verringerung der Kontaktfläche statt. Diese resultiert in einer relativ starken Zunahme des parasitären Reihenwiderstands der Transistoren, insbesondere der n-Kanal-Transistoren. Die p-Kanal-Transistoren leiden nicht so sehr unter dieser Skalierung, da die eingelassenen SiGe-Source-/Drain-Gebiete und die niedrigere, dem auf diesen Gebieten gebildeten Silizid zugehörige Barrierenhöhe für einen niedrigeren Reihenwiderstand sorgt.As the transistor densities continue to increase and the gap between the gates continues to decrease, of course, there is a reduction in the contact area. This results in a relatively strong increase the parasitic series resistance of the transistors, in particular the n-channel transistors. The p-channel transistors do not suffer as much from this scaling as the embedded SiGe source / drain regions and the lower barrier height associated with the silicide formed in these regions provides lower series resistance.

Wie unten beschrieben, wird eine Verbindung, die ein Gruppe-III-Element und ein Nitrid, wie z. B. Galliumnitrid (GaN) und Indiumnitrid (InN) umfasst, in den Source- und Drain-Gebieten verwendet, um eine Zugbelastung auf den Kanal für die n-Kanal-Transistoren bereitzustellen. Die Gruppe-III-N-Gebiete können, wie in 2 gezeigt, erhöhte Source-/Drain-Gebiete oder, wie in 3 gezeigt, eingelassene Source-/Drain-Gebiete sein. Der größere Gitterversatz zwischen der Gruppe-III-N-Verbindung und dem Silizium resultiert in einer hochgradigen Zugbelastung in der Gruppe-III-N-Filmschicht, die in einer hohen Zugbelastung im Siliziumkanal resultiert und hierdurch die Elektronenbeweglichkeit verbessert.As described below, a compound containing a group III element and a nitride, such as. Gallium nitride (GaN) and indium nitride (InN) is used in the source and drain regions to provide a tensile load on the channel for the n-channel transistors. The group III-N regions can, as in 2 shown, increased source / drain regions or, as in 3 shown to be embedded source / drain regions. The larger lattice mismatch between the Group III-N compound and the silicon results in a high tensile stress in the Group III-N film layer, resulting in high tensile stress in the silicon channel and thereby improving electron mobility.

Ein Vorteil der Nutzung der Gruppe-III-N-Verbindung sind die hohe Elektronenbeweglichkeit und die hohe Trägerkonzentration, die sich aus der polarisationsinduzierten Dotierung ergeben. So wurde z. B. bei InN-Filmschichten mit μ > 3000 cm2V–1s–1 ein Rsheet = 27 ohm/sq experimentell gezeigt. Ohmsche Kontakte mit einem niedrigen Widerstand wurden ebenfalls aufgrund der sehr hohen Oberflächenelektronenakkumulation gezeigt, die aus dem Fermi-Niveau-Pinning resultiert. Dies ist insbesondere für die Länge und den Abstand der Gates im Hinblick auf die Zunahme der Transistordichte vorteilhaft.An advantage of using the group III-N compound is the high electron mobility and the high carrier concentration resulting from the polarization-induced doping. So z. For example, for InN film layers with μ> 3000 cm 2 V -1 s -1, an R sheet = 27 ohms / sq was shown experimentally. Low resistance ohmic contacts have also been demonstrated due to the very high surface electron accumulation that results from Fermi level pinning. This is particularly advantageous for the length and spacing of the gates in view of the increase in transistor density.

In den unten beschriebenen Ausführungsformen wird InN als die Gruppe-III-N-Verbindung beschrieben. Wie erwähnt, können andere Verbindungen, wie GaN, verwendet werden. Darüber hinaus kann das InN auf einer schrittweise abgestuften Pufferschicht eines auf Si epitaktisch aufgewachsenen InGaN oder GaN epitaktisch aufgewachsen werden.In the embodiments described below InN is considered the group III-N compound described. As mentioned, can other compounds, such as GaN, are used. In addition, can the InN on a graded buffer layer of a Si epitaxially grown InGaN or GaN grown epitaxially become.

2 stellt eine Ausführungsform eines auf einem monokristallinen Substrat 60 angeordneten n-Kanal-Transistors dar. Die InN-Gebiete 61 werden in einem gewöhnlichen epitaktischen Prozess gewachsen und mit einem n-Typ-Dotierstoff, wie Arsen oder Phosphor, dotiert. Die Dotierung kann während des Aufwachsens der Gebiete oder nachfolgend durch z. B. Ionenimplantation erfolgen. In 2 sind die Gebiete 61 auf dem Substrat angeordnet, d. h. dass sie nicht vertiefte sondern vielmehr erhöhte Source- und Drain-Gebiete sind. Es ist zu beachten, dass die Gebiete 61 in 2 und ähnliche Gebiete in den anderen Figuren von dem Oxid 62 und dem Gate 63 beabstandet sind. Dies stellt die Verwendung von Seitenwandabstandhaltern dar, die typischerweise nach der Bildung der Erweiterung oder Spitze, der Source- und Drain-Gebiete und vor der Bildung der Source- und Drain-Hauptgebiete genutzt werden. 2 represents an embodiment of a on a monocrystalline substrate 60 arranged n-channel transistor. The InN areas 61 are grown in an ordinary epitaxial process and doped with an n-type dopant such as arsenic or phosphorus. The doping may be during the growth of the areas or subsequently by z. B. ion implantation done. In 2 are the areas 61 placed on the substrate, ie they are not recessed but rather elevated source and drain regions. It should be noted that the areas 61 in 2 and similar regions in the other figures of the oxide 62 and the gate 63 are spaced. This represents the use of sidewall spacers, which are typically used after the formation of the extension or tip, the source and drain regions, and before the formation of the main source and drain regions.

3 zeigt eine andere Ausführungsform, in der vor der Bildung der Source- und Drain-Gebiete ein selektives Ätzen des Substrats 70 stattfindet, um ein nachfolgendes Aufwachsen von eingelassenen Gebieten 71 zu ermöglichen. Dieses Einlassen ist für die SiGe-Gebiete in 1 gezeigt. Die eingelassenen, auf dem Substrat 70 angeordneten Source- und Drain-Gebiete 71 aus 3 sind wiederum von dem Oxid 72 und dem Gate 73 beabstandet. 3 shows another embodiment in which, prior to formation of the source and drain regions, selective etching of the substrate 70 takes place to a subsequent growing up of sunken areas 71 to enable. This insertion is for the SiGe areas in 1 shown. The sunken, on the substrate 70 arranged source and drain regions 71 out 3 are in turn of the oxide 72 and the gate 73 spaced.

Aufgrund des Gitterversatzes zwischen dem Silizium und dem InN stehen in beiden 2 und 3 die InN-Gebiete unter Zugspannung, was eine entsprechende Zugspannung in den Kanalgebieten der n-Kanal-Transistoren erzeugt.Due to the lattice offset between the silicon and the InN are in both 2 and 3 the InN regions under tension creating a corresponding tensile stress in the channel regions of the n-channel transistors.

Es ist verständlich, dass in allen Figuren bei einem Ersatz-Gate-Prozess eine andere Dummy-Gate-Elektrode und ein anderer Isolator als ein High-k-Isolator vorhanden sein können, wenn die Source-/Drain-Gebiete aufgewachsen werden. Das Dummy-Gate wird nach dem Wachsen der Source-/Drain-Gebiete mit einem Metall-Gate in diesem Prozess ersetzt.It is understandable, that in all figures in a replacement gate process another Dummy gate electrode and insulator other than a high-k insulator can be present when the source / drain regions are grown. The dummy gate after the growth of the source / drain regions with a metal gate replaced in this process.

In 4 wird eine Ausführungsform einer Integration der Gruppe-III-N-Source-/Drain-Gebiete in eine integrierte Schaltung gezeigt, die Depletion-Mode-Transistoren mit druckbelasteten Kanälen aufweist. Ein in zwei Gebiete durch ein Shallow-Trench-Isolationsgebiet 81 aufgeteiltes Substrat 80 ist dargestellt. Ein Gebiet umfasst einen p-Kanal-Transistor 82 und das andere einen n-Kanal-Transistor 83. Nachdem die Gates und die Abstandhalter für die Transistoren gebildet wurden, findet in einem typischen Prozess selektives Ätzen statt, um das Siliziumsubstrat so zu ätzen, dass Aussparungen für alle Source- und Drain-Gebiete, wie durch 84 angezeigt, bereitgestellt werden. Wie früher angemerkt, können die Gates an diesem Punkt in der Verarbeitung Dummy-Gates sein. Danach wird eines der p-Kanal- und n-Kanal-Transistorgebiete abgedeckt, während die entsprechenden Source-/Drain-Gebiete an den anderen Gebieten aufgewachsen werden.In 4 For example, one embodiment of integrating the group III N source / drain regions into an integrated circuit having depletion mode transistors with pressure loaded channels is shown. One in two areas through a shallow-trench isolation area 81 split substrate 80 is presented, layed out. An area includes a p-channel transistor 82 and the other an n-channel transistor 83 , After the gates and spacers for the transistors have been formed, selective etching takes place in a typical process to etch the silicon substrate such that recesses for all source and drain regions, such as through 84 be displayed. As noted earlier, the gates at this point in processing may be dummy gates. Thereafter, one of the p-channel and n-channel transistor regions is covered while the corresponding source / drain regions are grown at the other regions.

So werden z. B. unter Verweis auf 4 nach der Bildung der Aussparungen 84 die n-Kanal-Transistorgebiete mit einem Photolack bedeckt. Danach wird das SiGe 85 aufgewachsen und mit einem p-Typ-Dotierstoff dotiert. Nachfolgend werden die p-Kanal-Transistoren abgedeckt, wodurch ermöglicht wird, dass die InN-Gebiete 86 epitaktisch aufgewachsen und dotiert werden, um die vertieften Source- und Drain-Gebiete für die selbstsperrenden Transistoren bereitzustellen, wie in 4 gezeigt.So z. B. with reference to 4 after the formation of the recesses 84 the n-channel transistor regions covered with a photoresist. After that, the SiGe 85 grown and doped with a p-type dopant. Subsequently, the p-channel transistors are covered, thereby allowing the InN regions 86 be epitaxially grown and doped to provide the recessed source and drain regions for the normally-off transistors, as in 4 shown.

Es sei angemerkt, dass in 4 die Gates als p+ oder n+ gezeigt sind. Dies wird verwendet, um anzuzeigen, dass dort, wo Polysilizium-Gates genutzt werden, die Gates dotiert sind, so z. B. wenn die Source- und Drain-Gebiete dotiert sind. Wenn Metall-Gates genutzt werden, wird das p+ und n+ dazu verwendet, um die angestrebte Austrittsarbeit des Metalls anzuzeigen, die entweder für einen Enhancement-Mode- oder einen Depletion-Mode-Transistor adäquat ist.It should be noted that in 4 the gates are shown as p + or n +. This is used to indicate that where polysilicon gates are used, the gates are doped, e.g. B. when the source and drain regions are doped. When metal gates are utilized, the p + and n + are used to indicate the desired work function of the metal, which is adequate for either an enhancement mode or a depletion mode transistor.

5 stellt eine andere Ausführungsform dar, in der die InN-Source- und Drain-Gebiete in alle CMOS-Transistoren integriert sind. Es werden weniger Maskierungsschritte für die Ausführungsform in 5 im Vergleich zur Ausführungsform in 4 benötigt. 5 FIG. 12 illustrates another embodiment in which the InN source and drain regions are integrated into all CMOS transistors. There are fewer masking steps for the embodiment in FIG 5 in comparison to the embodiment in FIG 4 needed.

Zuerst können die Gebiete für die n-Kanal-Transistoren abgedeckt werden, nachdem die Gates (oder Dummy-Gate-Elektroden) gebildet wurden. Danach wird das Substrat 90 an den vorgeschlagenen Positionen der Source- und Drain-Gebiete für die p-Kanal-Transistoren geätzt, wie durch die Gebiete 91 angezeigt. Dies erlaubt ein nachfolgendes Wachsen des SiGe an diesen Gebieten für vertiefte p+-SiGe-Source- und Drain-Gebiete. Wie in 5 angezeigt, vermittelt dies eine Druckbelastung auf die Siliziumkanäle der Depletion-Mode-Transistoren.First, the areas for the n-channel transistors may be covered after the gates (or dummy gate electrodes) have been formed. After that, the substrate becomes 90 etched at the proposed positions of the source and drain regions for the p-channel transistors as through the regions 91 displayed. This allows subsequent growth of the SiGe at these regions for recessed p + SiGe source and drain regions. As in 5 indicated, this imparts a pressure load on the silicon channels of the depletion mode transistors.

Nachfolgend wird InN selektiv auf allen Source- und Drain-Gebieten aufgewachsen. D. h., dass es auf beiden, dem SiGe und dem Si, neben den Gates der n-Kanal-Transistoren aufgewachsen wird, wie für die Transistoren 92 und 93 in 5 gezeigt. Dies resultiert in einer Zugbelastung des Siliziumkanals des n-Kanal-Transistors. Das InN auf dem SiGe verschlechtert zum Teil die Löcherbeweglichkeit im Transistor 92, aber nicht maßgeblich genug, um über den Vorteil der SiGe-Gebiete hinwegzukommen.Subsequently, InN is selectively grown on all source and drain regions. That is, it is grown on both the SiGe and Si adjacent to the gates of the n-channel transistors, as for the transistors 92 and 93 in 5 shown. This results in a tensile load of the silicon channel of the n-channel transistor. The InN on the SiGe partially degrades the hole mobility in the transistor 92 but not authoritative enough to get over the benefits of the SiGe areas.

Andere Kombinationen von vertieften und erhöhten Source- und Drain-Gebieten sind möglich. So können z. B. die InN-Gebiete zurückgesetzt sein, während die SiGe-Gebiete nicht zurückgesetzt sind. In einer anderen Ausführungsform können die InN-Gebiete zurückgesetzt sein und die SiGe für erhöhte Source- und Drain-Gebiete für die p-Kanal-Transistoren aufgewachsen und gleichzeitig auf den eingelassenen InN-Source- und Drain-Gebieten der n-Kanal-Transistoren aufgewachsen werden.Other Combinations of recessed and elevated source and drain regions are possible. So can z. For example, the InN areas are reset be while the SiGe areas are not reset are. In another embodiment can reset the InN areas be and the SiGe for increased Source and drain areas for the p-channel transistors grew up and at the same time on the recessed InN source and drain regions of the n-channel transistors are grown.

Somit wurden n-Kanal-Transistoren beschrieben, wobei zugbelastete Kanäle unter Verwendung einer Gruppe-III-N-Verbindung gebildet wurden. Die resultierenden Source- und Drain-Gebiete können erhöht oder vertieft sein und in Verbindung mit druckbelasteten Source- und Drain-Gebieten für p-Kanal-Transistoren gebildet werden.Consequently n-channel transistors have been described, with zugbelastete channels under Use of a group III-N compound were formed. The resulting Source and drain areas can be increased or be deepened and in conjunction with pressure-loaded source and Drain regions for p-channel transistors be formed.

ZusammenfassungSummary

Enhancement-Mode-Transistoren werden beschrieben, wobei eine Gruppe-III-N-Verbindung in den Source- und Drain-Gebieten verwendet wird, um eine Zugbelastung auf den Kanal zu vermitteln. Die Source- und Drain-Gebiete können erhöht oder eingelassen und in Verbindung mit vertieften oder erhöhten Druckgebieten für p-Kanal-Transistoren hergestellt werden.Enhancement mode transistors are described, with a group III-N compound in the source and drain areas is used to apply a tensile load to the Channel to convey. The source and drain regions can be increased or embedded and in conjunction with recessed or elevated pressure areas for p-channel transistors getting produced.

Claims (21)

Ein Verfahren zur Herstellung eines n-Kanal-Transistors, aufweisend: Bilden von Gruppe-III-N-Gebieten neben einem Kanalgebiet; und Dotieren der Gruppe-III-N-Gebiete mit einem n-Typ-Dotierstoff.A method for producing an n-channel transistor, comprising: Forming group III-N regions adjacent to a channel region; and Doping the group III-N regions with an n-type dopant. Verfahren nach Anspruch 1, wobei die Gruppe-III-N-Gebiete InN-Gebiete sind.The method of claim 1, wherein the group III-N regions InN areas are. Verfahren nach Anspruch 1, wobei die Gruppe-III-N-Gebiete in ein Siliziumsubstrat vertieft sind.The method of claim 1, wherein the group III-N regions are recessed in a silicon substrate. Verfahren nach Anspruch 1, wobei die Gruppe-III-N-Gebiete von einem Siliziumsubstrat erhöht sind.The method of claim 1, wherein the group III-N regions are increased from a silicon substrate. Verfahren nach Anspruch 1, umfassend ein Bilden eines p-Kanal-Transistors bei der Herstellung des n-Kanal-Transistors.The method of claim 1, comprising forming a p-channel transistor in the manufacture of the n-channel transistor. Verfahren nach Anspruch 5, umfassend ein Bilden von SiGe-Gebieten neben einer Kanalregion des p-Kanal-Transistors.The method of claim 5, comprising forming SiGe regions adjacent to a channel region of the p-channel transistor. Verfahren nach Anspruch 6, umfassend ein Vertiefen der SiGe-Gebiete in ein Siliziumsubstrat.The method of claim 6, comprising deepening the SiGe regions into a silicon substrate. Verfahren nach Anspruch 6, wobei die SiGe-Gebiete von einem Siliziumsubstrat erhöht sind.The method of claim 6, wherein the SiGe regions increased from a silicon substrate are. Verfahren nach Anspruch 2, umfassend Aufwachsen der InN-Gebiete auf einem schrittweise abgestuften Puffergebiet aus GaN, das auf einem Siliziumsubstrat gebildet ist.The method of claim 2, comprising growing the InN regions on a graded buffer area GaN formed on a silicon substrate. Ein Verfahren zur Herstellung eines n-Kanal-Transistors, aufweisend: Bilden von zugbelasteten Gebieten aus einem Gruppe-III-N-Material neben einem Kanalgebiet; Dotieren des Materials mit einem n-Typ-Dotierstoff.A method for producing an n-channel transistor, comprising: Forming tensile stressed areas of a group III-N material adjacent to a canal area; Doping the material with an n-type dopant. Verfahren nach Anspruch 10, wobei das Material InN aufweist.The method of claim 10, wherein the material is InN having. Verfahren nach Anspruch 11, umfassend ein Herstellen eines p-Kanal-Transistors während der Herstellung des n-Kanal-Transistors.The method of claim 11, comprising establishing a p-channel transistor during the Production of the n-channel transistor. Verfahren nach Anspruch 12, umfassend ein Bilden von SiGe-Gebieten neben einem Kanalgebiet des p-Kanal-Transistors.The method of claim 12, comprising forming of SiGe regions adjacent to a channel region of the p-channel transistor. Verfahren nach Anspruch 11, umfassend ein Vertiefen des InN-Materials in ein Siliziumsubstrat.The method of claim 11, comprising deepening of the InN material in a silicon substrate. Verfahren nach Anspruch 11, wobei das InN-Material von einem Siliziumsubstrat erhöht ist.The method of claim 11, wherein the InN material increased from a silicon substrate is. Verfahren nach Anspruch 11, wobei das InN auf einem GaN-Gebiet aufgewachsen ist.The method of claim 11, wherein the InN is on a GaN area grew up. Verfahren nach Anspruch 16, umfassend ein Aufwachsen des InN-Gebiets auf einem schrittweise abgestuften Gebiet, das GaN und InGaN aufweist, die auf einem Siliziumsubstrat gebildet sind.The method of claim 16, comprising growing of the InN region on a gradual scale, the GaN and InGaN formed on a silicon substrate. Ein n-Kanal-Transistor mit einem Source- und einem Drain-Gebiet, die einen Gruppe-III-N-Verbindung aufweisen.An n-channel transistor with a source and a Drain region comprising a group III-N compound. Transistor nach Anspruch 18, wobei die Verbindung InN aufweist.The transistor of claim 18, wherein the connection InN. Transistor nach Anspruch 19, wobei das InN mit Arsen oder Phosphor dotiert ist.The transistor of claim 19, wherein the InN is arsenic or phosphorus is doped. Transistor nach Anspruch 20, wobei das InN auf einem GaN-Gebiet angeordnet ist, das auf Silizium gebildet ist.The transistor of claim 20, wherein the InN is on a GaN region is formed, which is formed on silicon.
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