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DE10354936A1 - Strahlungemittierendes Halbleiterbauelement - Google Patents

Strahlungemittierendes Halbleiterbauelement Download PDF

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Publication number
DE10354936A1
DE10354936A1 DE10354936A DE10354936A DE10354936A1 DE 10354936 A1 DE10354936 A1 DE 10354936A1 DE 10354936 A DE10354936 A DE 10354936A DE 10354936 A DE10354936 A DE 10354936A DE 10354936 A1 DE10354936 A1 DE 10354936A1
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Germany
Prior art keywords
active zone
light
produced
mirror layer
semiconductor
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Granted
Application number
DE10354936A
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English (en)
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DE10354936B4 (de
Inventor
Klaus Streubel
Stefan Illek
Ines Pietzonka
Herbert Brunner
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Ams Osram International GmbH
Original Assignee
Osram Opto Semiconductors GmbH
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Priority to DE10354936A priority Critical patent/DE10354936B4/de
Publication of DE10354936A1 publication Critical patent/DE10354936A1/de
Application granted granted Critical
Publication of DE10354936B4 publication Critical patent/DE10354936B4/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/08—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a plurality of light emitting regions, e.g. laterally discontinuous light emitting layer or photoluminescent region integrated within the semiconductor body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732—Location after the connecting process
    • H01L2224/73251—Location after the connecting process on different surfaces
    • H01L2224/73265—Layer and wire connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
    • H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L25/075—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00
    • H01L25/0756—Stacked arrangements of devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/005—Processes
    • H01L33/0093—Wafer bonding; Removal of the growth substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/10—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a light reflecting structure, e.g. semiconductor Bragg reflector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/44—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the coatings, e.g. passivation layer or anti-reflective coating
    • H01L33/46—Reflective coating, e.g. dielectric Bragg reflector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/50—Wavelength conversion elements
    • H01L33/501—Wavelength conversion elements characterised by the materials, e.g. binder
    • H01L33/502—Wavelength conversion materials

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Led Device Packages (AREA)
  • Led Devices (AREA)
  • Semiconductor Lasers (AREA)

Abstract

Die Erfindung betrifft ein strahlungsemittierendes Halbleiterbauelement mit einem Halbleiterkörper (1), der eine Halbleiterschichtenfolge mit einer aktiven Zone (3) umfaßt und eine Hauptfläche (4) aufweist, wobei in der aktiven Zone (3) Strahlung einer Wellenlänge lambda¶P¶ erzeugt wird. Dem Halbleiterkörper (1) ist dabei ein Halbleiterkonversionselement (2) nachgeordnet, das von der in der aktiven Zone (3) erzeugten Strahlung angeregt wird und Strahlung einer Wellenlänge lambda¶S1¶ aussendet, die größer als die Wellenlänge lambda¶P¶ ist. In verschiedenen Ausführungsformen kann auf der Hauptfläche (4) eine Spiegelschicht (15) oder die Halbleiterschichtenfolge seitens der Hauptfläche (4) auf einem Träger (5) oder einem Aufwachssubstrat angeordnet sein und/oder das Halbleiterkonversionselement (2) mehrstückig ausgebildet sein.
DE10354936A 2003-09-30 2003-11-25 Strahlungemittierendes Halbleiterbauelement Expired - Lifetime DE10354936B4 (de)

Priority Applications (1)

Application Number Priority Date Filing Date Title
DE10354936A DE10354936B4 (de) 2003-09-30 2003-11-25 Strahlungemittierendes Halbleiterbauelement

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
DE10345429 2003-09-30
DE10345429.2 2003-09-30
DE10354936A DE10354936B4 (de) 2003-09-30 2003-11-25 Strahlungemittierendes Halbleiterbauelement

Publications (2)

Publication Number Publication Date
DE10354936A1 true DE10354936A1 (de) 2005-04-28
DE10354936B4 DE10354936B4 (de) 2012-02-16

Family

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DE10354936A Expired - Lifetime DE10354936B4 (de) 2003-09-30 2003-11-25 Strahlungemittierendes Halbleiterbauelement

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Cited By (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2009094980A1 (de) * 2008-01-31 2009-08-06 Osram Opto Semiconductors Gmbh Optoelektronisches bauelement und verfahren zur herstellung eines optoelektronischen bauelements
WO2010108811A1 (de) * 2009-03-25 2010-09-30 Osram Opto Semiconductors Gmbh Leuchtdiode
WO2010129464A1 (en) * 2009-05-05 2010-11-11 3M Innovative Properties Company Re-emitting semiconductor carrier devices for use with leds and methods of manufacture
US8304976B2 (en) 2009-06-30 2012-11-06 3M Innovative Properties Company Electroluminescent devices with color adjustment based on current crowding
DE102011122778B3 (de) * 2011-11-24 2013-03-28 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Verfahren zur Herstellung einer Lumineszenzkonversions-Leuchtdiode
US8541803B2 (en) 2009-05-05 2013-09-24 3M Innovative Properties Company Cadmium-free re-emitting semiconductor construction
US8629611B2 (en) 2009-06-30 2014-01-14 3M Innovative Properties Company White light electroluminescent devices with adjustable color temperature
DE102012110552A1 (de) * 2012-11-05 2014-05-08 Osram Opto Semiconductors Gmbh Konverterelement, optoelektronisches Bauelement mit einem derartigen Konverterelement und Verfahren zum Herstellen eines Konverterelements
DE102013206139A1 (de) * 2013-04-08 2014-10-09 Osram Opto Semiconductors Gmbh Optoelektronisches Bauelement
US8994071B2 (en) 2009-05-05 2015-03-31 3M Innovative Properties Company Semiconductor devices grown on indium-containing substrates utilizing indium depletion mechanisms
WO2015181072A1 (de) * 2014-05-27 2015-12-03 Osram Opto Semiconductors Gmbh Halbleiterbauelement und beleuchtungsvorrichtung
JP2016076578A (ja) * 2014-10-06 2016-05-12 日本放送協会 発光素子
WO2019077034A1 (de) * 2017-10-20 2019-04-25 Osram Opto Semiconductors Gmbh Epitaxie-wellenlängenkonversionselement, licht emittierendes halbleiterbauelement sowie verfahren zur herstellung des epitaxie-wellenlängenkonversionselements und des licht emittierenden halbleiterbauelements
WO2019141586A1 (de) * 2018-01-18 2019-07-25 Osram Opto Semiconductors Gmbh Epitaktisches konversionselement, strahlungsemittierender halbleiterchip und deren verfahren zur herstellung

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO1999050916A1 (en) * 1998-04-01 1999-10-07 Massachusetts Institute Of Technology Quantum dot white and colored light emitting diodes
EP1132977A2 (de) * 2000-03-10 2001-09-12 Kabushiki Kaisha Toshiba Lichtemittierende Halbleitervorrichtung und Herstellungsverfahren
US20020139984A1 (en) * 2001-01-26 2002-10-03 Kabushiki Kaisha Toshiba Semiconductor light emitting element
WO2002097902A1 (en) * 2001-05-31 2002-12-05 Epivalley Co., Ltd. Semiconductor led device

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
AT410266B (de) * 2000-12-28 2003-03-25 Tridonic Optoelectronics Gmbh Lichtquelle mit einem lichtemittierenden element

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO1999050916A1 (en) * 1998-04-01 1999-10-07 Massachusetts Institute Of Technology Quantum dot white and colored light emitting diodes
EP1132977A2 (de) * 2000-03-10 2001-09-12 Kabushiki Kaisha Toshiba Lichtemittierende Halbleitervorrichtung und Herstellungsverfahren
US20020139984A1 (en) * 2001-01-26 2002-10-03 Kabushiki Kaisha Toshiba Semiconductor light emitting element
WO2002097902A1 (en) * 2001-05-31 2002-12-05 Epivalley Co., Ltd. Semiconductor led device

Cited By (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8686451B2 (en) 2008-01-31 2014-04-01 Osram Opto Semiconductor Gmbh Optical-electronic component and method for production thereof
WO2009094980A1 (de) * 2008-01-31 2009-08-06 Osram Opto Semiconductors Gmbh Optoelektronisches bauelement und verfahren zur herstellung eines optoelektronischen bauelements
WO2010108811A1 (de) * 2009-03-25 2010-09-30 Osram Opto Semiconductors Gmbh Leuchtdiode
US8994071B2 (en) 2009-05-05 2015-03-31 3M Innovative Properties Company Semiconductor devices grown on indium-containing substrates utilizing indium depletion mechanisms
WO2010129464A1 (en) * 2009-05-05 2010-11-11 3M Innovative Properties Company Re-emitting semiconductor carrier devices for use with leds and methods of manufacture
CN102804422A (zh) * 2009-05-05 2012-11-28 3M创新有限公司 用于与led结合使用的重发光半导体载流子器件及其制造方法
US8541803B2 (en) 2009-05-05 2013-09-24 3M Innovative Properties Company Cadmium-free re-emitting semiconductor construction
US9293622B2 (en) 2009-05-05 2016-03-22 3M Innovative Properties Company Re-emitting semiconductor carrier devices for use with LEDs and methods of manufacture
US8304976B2 (en) 2009-06-30 2012-11-06 3M Innovative Properties Company Electroluminescent devices with color adjustment based on current crowding
US8629611B2 (en) 2009-06-30 2014-01-14 3M Innovative Properties Company White light electroluminescent devices with adjustable color temperature
DE102011122778B3 (de) * 2011-11-24 2013-03-28 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Verfahren zur Herstellung einer Lumineszenzkonversions-Leuchtdiode
WO2013075833A1 (de) 2011-11-24 2013-05-30 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Verfahren zur herstellung einer lumineszenzkonversions-leuchtdiode
DE102012110552A1 (de) * 2012-11-05 2014-05-08 Osram Opto Semiconductors Gmbh Konverterelement, optoelektronisches Bauelement mit einem derartigen Konverterelement und Verfahren zum Herstellen eines Konverterelements
DE102013206139A1 (de) * 2013-04-08 2014-10-09 Osram Opto Semiconductors Gmbh Optoelektronisches Bauelement
WO2015181072A1 (de) * 2014-05-27 2015-12-03 Osram Opto Semiconductors Gmbh Halbleiterbauelement und beleuchtungsvorrichtung
US10553748B2 (en) 2014-05-27 2020-02-04 Osram Opto Semiconductors Gmbh Semiconductor component and illumination device
US11393949B2 (en) 2014-05-27 2022-07-19 Osram Opto Semiconductors Gmbh Semiconductor component and illumination device
JP2016076578A (ja) * 2014-10-06 2016-05-12 日本放送協会 発光素子
WO2019077034A1 (de) * 2017-10-20 2019-04-25 Osram Opto Semiconductors Gmbh Epitaxie-wellenlängenkonversionselement, licht emittierendes halbleiterbauelement sowie verfahren zur herstellung des epitaxie-wellenlängenkonversionselements und des licht emittierenden halbleiterbauelements
WO2019141586A1 (de) * 2018-01-18 2019-07-25 Osram Opto Semiconductors Gmbh Epitaktisches konversionselement, strahlungsemittierender halbleiterchip und deren verfahren zur herstellung

Also Published As

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