DE102021132784A1 - Quantum technological device with an energy reserve and method for its operation - Google Patents

Abstract

The invention relates to a method for operating a quantum measurement system and/or a quantum technological device that includes device parts that are consumers of electrical energy. Firstly, the method comprises carrying out a quantum technological measurement among paramagnetic centers and/or pairs of coupled paramagnetic centers within a first period of time. Secondly, the method comprises stopping or not carrying out the quantum technological measurement within a second period of time. The parts of the device that are consumers of electrical energy are supplied with electrical energy from an energy reserve (BENG) in the first time periods in which the measurement is carried out.

Description

This application takes priority from the German patent application DE 10 2021 114 589.9 from 07.06.2021.

field of invention

The invention relates to a quantum measurement system and/or a quantum technological device with an energy reserve and a method for operating this quantum measurement system or this quantum technological device, which include device parts that are consumers of electrical energy, the method using the energy reserve when quantum technological methods are being carried out.

The technical teaching presented here is based on an investigation of the magnetic field-dependent photoluminescence (PL) of a diamond single crystal with a high density of nitrogen vacancy (NV) centers. The single diamond crystal is optically coupled to the end of an optical waveguide. The underlying angle-dependent magnetic field sweep measurements between 0 mT and 111 mT comprised the use of an oscillating irradiation of the diamond single crystal by means of a modulation signal combined with lock-in techniques for detecting the generated fluorescence radiation by identifying the modulation signal in the received signal of the photodetector that detects the Converts fluorescence signal into the received signal. In addition to the expected, superimposed fluorescence radiation (FL) of differently aligned NV centers in diamond, the measurements of the preliminary tests on which the invention is based have shown a large number of characteristics in the intensity profile of the fluorescence radiation (FL) which can be the basis for a wide variety of technical applications. These applications of these hitherto unknown features in the intensity profile of the fluorescence radiation (FL) and the use of these features in the intensity profile of the fluorescence radiation (FL) for the calibration and/or measurement of physical parameters and the use of these in the intensity profile of the fluorescence radiation (FL) as indicators of particularly suitable HD -NV diamonds are claimed here. The result of the evaluation of these features in the intensity profile of the fluorescence radiation (FL) relates these features in the intensity profile of the fluorescence radiation (FL) to level anti-crossings and cross-relaxations. In particular, measurements of fluorescence radiation (FL) intensity (photoluminescence measurements) allowed detection of auto-cross-relaxations between coupled NV centers within a diamond, particularly within a HD-NV diamond. In addition, the measurements of the intensity of the fluorescence radiation (FL) as a function of an externally acting magnetic flux density B of an external magnetic field show drops in the intensity of the photoluminescence (FL) at low values of the magnetic flux density B of the external magnetic field B, which are cannot be explained by a simple model of cross-relaxation between diamond NV centers or with substitutional nitrogen at diamond interstitials.

In the following, references to relevant specialist literature on a subject matter are placed in square brackets "[]" or in "//". Such a reference expressly does not mean that the subject matter there is patent-damaging. The reference is only intended to enable the reader to better understand the situation.

Unless otherwise stated, all features of this text can be freely combined with each other. This applies to the entire document presented here. Unless otherwise stated, the features described in the description of the figures can also be freely combined with the other features as features of the invention. All of these possible combinations are therefore also considered to be disclosed within the meaning of the document presented here. This also expressly applies to features in the list of features. The list of features only reflects particularly preferred combinations of the features in the list of features through the references in the list of features. The list of features expressly does not represent the claim. The claim arises exclusively from the applicable claims, whereby the document presented here expressly leaves open which claims can be derived or divided from the features of the document presented here in the course of the registration process. A limitation of individual features of the exemplary embodiments to the combination with other features of the exemplary embodiments is expressly not intended. In addition, physical features of the device can also be reworded as method features and method features can be reworded as physical features of the device. Such a reformulation is thus automatically disclosed as well.

General introduction

Im Falle eines Ensembles von NV-Zentren ist dabei n die Anzahl der miteinander gekoppelten NV-Zentren bzw. der benutzten NV-Zentren.Diamond is the host material for one of the most outstanding research objects of applied quantum physics in solids of the last decade - the negatively charged nitrogen defect (NV) center. This document also refers to this here as ^NV- . The NV center within a diamond shows an electronic spin polarization to its | under optical excitation m=0> ground state [1]. This enables the coherent control of single electronic spins at room temperature with coherence times of a few milliseconds [2]. These properties enable the investigation of fundamental quantum mechanical questions, such as g. entanglement, as well as the development of highly sensitive sensors based on quantum properties or nuclear hyperpolarization [3-6] and quantum computers (e.g DE 10 2020 101 784 B3 ). A conventional measurement principle for the intensity of the fluorescence radiation (FL) of the NV center is known as Optically Detected Magnetic Resonance (ODMR). The OMDR measurement is based on the spin-dependent optical fluorescence of the NV center [7, 8]. Measurements can be carried out both on ensembles, ie a coupled multiplicity of NV centers, and on individual color centers, ie for example a single NV center. For measuring the value of parameters of external fields, e.g. B. the value of the magnetic flux density B of a magnetic field, it is advantageous to perform this on ensembles, i.e. with a coupled large number of NV centers, and not just to use a single NV center due to the higher signal-to-noise ratio. The signal-to-noise ratio (SNR) is known to improve in proportion to square root n, where n is the number of detectors (measurements). $\left(SNR\sim \sqrt{n}\right).$

In the case of an ensemble of NV centers, n is the number of NV centers coupled to one another or the number of NV centers used.

The authors expressly point out the possible use of paramagnetic centers other than NV centers as NV centers.

However, the frequent use of microwaves in the prior art to control the fluorescence of the NV centers and the associated equipment and experimental effort make this method complex and cost-intensive. In many cases, a simpler, microwave-free method is far more cost- and benefit-efficient. It therefore offers significant economic advantages, which also include simplified manufacturability and less expensive equipment.

In this context we refer to the international patent applications PCT / DE 2020 / 100 953 , PCT / EP 2019 / 079 992 , PCT / EP 2020 / 068 110 , PCT / EP 2020 / 070 485 , PCT / DE 2021 / 100 069 , PCT / DE 2020 / 100 827 , PCT / DE 2020 / 100 430 and PCT / DE 2020 / 100 648 , whose technical teaching, insofar as this is permissible in nationalizations in subsequent international proceedings under the respective national law, in combination with the technical teaching disclosed here, is part of the disclosure of the document presented here.

An external magnetic field causes a Zeeman splitting of the NV sublevels in their fluorescence emission. This Zeemann splitting also generally leads to a mixing of these quantum mechanical energy levels. This directly affects the intensity of the fluorescence radiation (FL) of the NV centers under optical excitation [9]. Correspondingly, the magnetic field can be determined by measuring the intensity of the fluorescence radiation (PL). In contrast to a microwave-based measurement method, the sensitivity of the microwave-free approach presented here is mainly limited by the noise of the laser intensity of the laser typically used as the pump radiation source and the electronic noise of the control and evaluation electronics as well as the quality of the optical elements used. In order to take advantage of the ensemble measurements with a large number of NV centers, the authors examined fluorescence measurements of the fluorescence radiation (FL) of red diamonds when irradiated with green pump radiation in the measurements fundamental to this invention. These red diamonds had an extremely high NV center density. The prior art also refers to such diamonds as high-density NV diamonds (HD-NV diamonds). At this point, for example, the utility model DE 20 2020 106 110.0, whose technical teaching, insofar as this is permissible in nationalizations in subsequent international proceedings under the respective national law, in combination with the technical teaching disclosed here is part of the disclosure of the document presented here. Irradiating the NV centers in diamond with pump radiation of a pump wavelength λ _pmp (typically green) causes them to emit fluorescence radiation (FL) with a fluorescence wavelength λ _fl (typically red). In particular when using an NV center as a paramagnetic center, the pump radiation should have a pump radiation wavelength (λ _pmp ) in a wavelength range from 400 nm to 700 nm wavelength and/or better 450 nm to 650 nm and/or better 500 nm to 550 nm and/or or better 515 nm to 540 nm. A pump radiation is clearly preferred wavelength (λ _pmp ) of 532 nm. The pump radiation is preferably generated by means of a light-emitting diode or a laser, in particular by means of a semiconductor laser. To characterize a diamond, for example to determine its suitability as HD-NV diamond, the intensity of the fluorescence radiation (FL) of the NV centers within the diamond can now be measured as a function of the value of the flux density B of a magnetic field. The magnetic field is suitably aligned relative to the NV center. More on that later. For the measurement, the value of the magnetic flux density B is then preferably scanned and the changing intensity of the fluorescence radiation (FL) of the NV centers in the diamond is recorded, resulting in an intensity value curve depending on the value of the respective magnetic flux density B of the external magnetic field. These intensity curves show extremes in the form of maxima and minima and in particular local dips in the intensity of the fluorescence radiation (FL) from the NV centers. An essential idea of the method presented here for quality assurance for quantum technological devices that use HD-NV diamonds is now to record these features in production and to preferentially use those diamonds that have certain features that can only be found in HD- Form NV diamonds, because then the density of the NV centers is high enough. During the development of the invention, it was recognized that a drop in intensity (dip) of the fluorescence radiation (FL) at an external magnetic flux density B of about 59.5 mT acting on the HD-NV diamond is such a characteristic that for HD- characteristic of NV diamonds, and the presence of which ensures functioning of later quantum technological devices and methods utilizing these HD NV diamonds. In the sense of this document, a diamond is now an HD-NV diamond suitable for such quantum technological devices and methods if the intensity of its fluorescence radiation (FL) when irradiated with pump radiation with the pump radiation wavelength, i.e. with a wavelength of 532 nm, for example , shows a typical intensity drop (dip) of the fluorescence radiation (FL) at an external magnetic flux density B of about 59.5 mT acting on the HD-NV diamond, which indicates an NV-NV interaction and thus a small mean distance between the NV centers. All of the features in the intensity profile of the magnetic field-dependent fluorescence radiation (FL) of NV-rich diamonds (HD-NV diamonds) uncovered in the course of the laboratory investigations leading up to this invention shed light on the quantum mechanical interactions of the NV centers with their surroundings. For example, ensemble measurements, i.e. measurements of a large number of NV centers coupled with one another, allow a systematic investigation with small defect-NV distances due to a high signal-to-noise ratio (SNR). This is only possible to a limited extent in the case of individual measurements of isolated NV centers, e. would be found. The measurements preceding the invention presented here are therefore not only useful in connection with possible applications of NV-based magnetic field sensors, but can also contribute to the use of defect NV coupling for quantum information processing with coupled NV centers [13, 14]. The use of the discovered effects for quantum computers is conceivable.

task

The object of the proposal is therefore to provide a solution to a clear criterion for the presence of an HD-NV diamond that can be checked relatively easily in production.

solution of the task

MATERIAL AND EXPERIMENTAL METHODS

A HPHT diamond (HPHT=high pressure and high temperature grown diamond) is typically the basis of the production of a HD-NV diamond. However, production with low-hydrogen CVD diamonds is conceivable. Such a diamond preferably has a high nitrogen concentration at lattice sites. Irradiation with a 10 MeV electron beam now creates a large number of vacancies in the original, nitrogen-rich diamond. The electron beam penetrates the diamond, which is typically several millimeters thick. However, an electron creates only a few defects along the transmission path in the diamond (~3cm ^-1 ). The resulting defects thus have a large mean distance from one another. First of all, this reduces the probability of an undesired accumulation of vacancies (parasitic vacancy clusters). A high NV center density in the diamond can thus be achieved by heat treatment (tempering), which preferably takes place in parallel to the irradiation with electrons. However, post-heat treatments are also known from the literature, but these typically cannot achieve the NV center densities that are desired. The time course of the electric current value of the electron beam current used to irradiate the diamonds typically exhibits a PWM modulation with a PWM period and a duty cycle. duty cycle). A controller in the irradiation system that generates the electron beam preferably uses a temperature sensor to record the current temperature of the diamond or diamonds and regulates the temperature of the diamond or diamonds to a target temperature, preferably by adjusting the beam current via the beam current. The target temperature is preferably between 800°C and 900°C. It is conceivable that other heat-regulating elements such as cooling or heating can also have a regulating effect on the temperature of the diamond or diamonds during the irradiation, with the specific structure and the heat dissipation resistance playing a role in the respective construction. The controller preferably regulates the duty cycle of the PWM modulation of the time profile of the electrical current value of the electron beam current. The accumulated fluence (2×10 ¹⁸ cm ^-2 ) [15]. of irradiation controls the net defect density of defects in the irradiated diamond.

This process typically ultimately leads to a mixture of substitutional nitrogen in the form of so-called P1 centers and NV centers in the diamond. Typical defect concentrations in diamonds are, for example, [N]=30 ppm or [NV]=3 ppm. Here, [N] is the defect concentration of P1 centers and [NV] is the defect concentration of NV centers.

When developing the invention, the authors carried out the fluorescence radiation measurements for measuring the intensity value curve of the fluorescence radiation (FL) as a function of a magnetic flux density B of an external magnetic field with different orientations of the magnetic field in relation to the diamond with a self-made setup (see also 1 ). A printed circuit board (PCB) with a laser diode (Osram PI520B, 520 nm) including an electronic driver (icHaus iC-HKB) for this laser diode served as a pump radiation source for irradiating the diamond with pump radiation of the pump radiation wavelength (520 nm). A cylindrical magnetic field system generated the magnetic field in question, in which a 2-axis rotator was located. Alternatively, a multi-axis goniometer (MEMSG) can also be used. The magnetic field system used to generate the magnetic field acting on the diamond consisted of three concentric cylindrical coils. The three concentric cylindrical coils served to achieve a preferably large-area and preferably homogeneous field. An EA PS 5000 A power supply for fields with a magnetic flux density B value of up to 111 mT and an R&S HMP2020 for sweeps in weak magnetic fields with a magnetic flux density B value of less than 50 mT supplied the magnetic field system for generating the on in the experiments preceding the invention magnetic field acting on the diamond with energy. The use of this equipment is an example configuration and can be substituted with other functionally equivalent devices. The diamond, which was around 2 mm in size in the exemplary preliminary tests, was attached to the end of an optical waveguide. A goniometer (MEMSG) placed the diamond with the optical fiber goniometrically in the middle of the magnetic field system and thus in the middle of the magnetic field, where its homogeneity was particularly high. An optical coupling device coupled the pump radiation from the pump radiation source into the optical waveguide. The laser light from the said laser served as pump radiation, which penetrated the diamond as it exited the optical waveguide and there stimulated the emission of fluorescence radiation (FL) by the NV centers in the diamond [16-20].

The optical fiber not only served to guide the pump radiation into the diamond, but also to transport back the fluorescence radiation (FL) from the NV centers located within the diamond. The cut of the diamond meant that the fluorescence radiation (FL) generated in the volume of the diamond by its NV centers escaped with increased intensity at certain points on the diamond. In the case of a diamond, such a point is, for example, the tip of the diamond. Other points of the diamond are also suitable and can easily be calculated by a specialist using a ray tracing simulation. Thus, the optical fiber collects part of the fluorescence radiation (FL) from the NV centers within the diamond. The optical waveguide is therefore preferably also part of an optical extraction system for the fluorescence radiation, which collects the fluorescence radiation (FL) and directs it via a dichroic mirror (cut-on preferably at 600 nm) to a photoreceiver (photodetector (PD)), which transmits the intensity signal of the Fluorescence radiation (FL) converts into a received signal (S0). In the preliminary experiments in the development of the invention, the photodetector (PD) was a Hamamatsu S5971 photodiode. In the preliminary tests, the exemplary photodiode was mounted on another circuit board together with amplifier electronics, which is preferably a simple transimpedance amplifier, to improve the robustness against electromagnetic radiation. The amplifier converted the received signal (S0) into an amplified received signal (S1). A lock-in amplifier was used to measure the amplified received signal (S1) supplied by the amplifier, here the exemplary transimpedance amplifier, which is typically a voltage signal with a voltage curve over time. A lock-in amplifier (LIA) from Zurich Instruments MFLI was used in the preliminary tests for the development of this invention. In the preliminary tests in the development of the invention supplied a abge 12V battery as energy reserve (BENG) shielded the laser as pump radiation source (LD) and the photodiode to minimize noise, since electrical voltage regulators (SRG) usually have too much noise. It was thus recognized according to the invention that it makes sense to supply a quantum measurement system with electrical energy in the first periods in which the measurement takes place by means of a battery or an accumulator as an energy reserve (BENG) and at second times to supply the accumulator or the battery with a To load voltage regulator (SRG) or current regulator or another suitable charger, the charger (SRG) preferably being separated from the quantum system at first, for example by an electrical switch as a separator (TS). Such a switch can be a transistor or a relay or a MEMS relay, for example. Instead of the battery, the device can also use another electrical energy storage device, such as an inductor or a capacitor as an energy reserve (BENG). The pump radiation source (LD) is preferably intensity-modulated with a modulation signal (S5) with regard to its pump radiation intensity. The modulation signal (S5) is preferably a pulsed signal, for example a signal with pulse amplitude modulation (PAM) or a PWM signal or a PDM signal or a PCM signal (pulse code modulation) or a signal modulated with a spread code or a pulse frequency modulation (PFM) modulated signal or a pulse-pause modulation (PPM) modulated signal or the like. Signals with pulse phase modulation (PPM) or pulse position modulation (PPM) are also suitable.

In developing the invention, a pulsed signal with a 50% duty cycle was used as an exemplary modulation signal (S5). An exemplary waveform generator (WFG) (Keysight 33500B) generated the exemplary modulation signal (S5) with a pulse frequency of 375 kHz and 250 kHz for the full magnetic field range scans, respectively, in the preliminary tests for elaborating the invention. In the preliminary tests to develop the invention, the exemplary dwell time for the intensity measurement of the fluorescence radiation (FL) of the NV centers of the diamond per magnetic field value was between 1 ms and 3 ms excluding a previous settling time for the magnetic field. Unless otherwise stated, the value of the intensity of the fluorescence radiation (FL) is normalized to the value without an applied magnetic field (B=0T) external to the diamond. In the following the term "misalignment" is used as an angle relative to the (111) direction of the diamond lattice of diamond (HDNV) and for "aligned" NV centers it should always be assumed that their symmetry axis is parallel to that laid out external to the diamond (HDNV). magnetic field.

Incidentally, the fiber optic cable (LWL) can be designed to maintain polarization.

RESULTS OF THE PRELIMINARY TESTS AND DISCUSSION

2 ( 2a the pre-registration DE 10 2021 114 589.9) shows the intensity of the fluorescence radiation (FL) over the entire magnetic field range examined in the preliminary tests as part of the development of the invention with magnetic flux density values of the magnetic flux density B between 0 mT and 111 mT, when the magnetic field generated externally to the diamond (HDNV). one of the four equivalent NV directions. The term "aligned" is to be understood in such a way that the deviation in alignment is less than 1°. For comparison, the result of a simple model is shown that shows the intensity of the fluorescence radiation (FL) of an ensemble of a large number of NVs evenly distributed in all directions -Centers in a diamond lattice of diamond (HDNV) at the corresponding magnetic field vector calculated based on the teaching of reference [9] The shape of the model curve results from the fact that when the diamond (HDNV) is oriented with an NV direction along the outer magnetic field, the three remaining NV directions are tilted by an angle of about 109° with respect to the magnetic field vector according to the tetragonal symmetry.This results in an increasing mixing of the spin states with increasing strength of the flux density B of the external magnetic field for this sub-ensemble this mixing the intensity of the fluorescence radiation (FL) of an NV center b determined, there is a decrease in the intensity of the fluorescence radiation (FL) with increasing strength of the flux density B of the magnetic field until - depending on the optical excitation power - saturation is reached. Briefly, the model shows the fluorescence (FL) intensity of an ensemble of undisturbed, single NV centers [21]. Apparently, the measured curve of the intensity profile of the fluorescence radiation (FL) of the multitude of coupled NV centers as a function of the value of the flux density B of the external magnetic field of a magnetic field external to the diamond (HDNV) has some surprising properties, which can be explained by this simple model from the prior art cannot be reproduced with the technology.

These differences can be recorded, evaluated and used for a wide variety of technical purposes.

The difference between the model and the measurement from the elaboration of this invention is in 3 ( 2 B the pre-registration DE 10 2021 114 589.9). A pronounced decrease (compared to the model curve) in the intensity of the fluorescence radiation (FL) can be seen at 0 mT to 10 mT, 34 mT, 51 mT, 59.5 mT and 102.4 mT with some subtle substructures. The paper presented here designates the intensity drops at 0 mT to 10 mT, 34 mT, 51 mT, 59.5 mT and 102.4 mT as a value of the magnetic flux density also as the main fluorescence features. The specification presented here also designates the said substructures below as secondary fluorescent features. The document presented here also refers to the main fluorescent features and the secondary fluorescent features as fluorescent features as a common term. The appearance of the main fluorescent feature (E _102.4.0 ) at 102.4 mT can be attributed to Ground State Level Anti Crossing (GSLAC) of aligned NV centers [22, 23]. Coupling with neighboring ¹³ C spins gives rise to the substructures of the minor fluorescent features [10, 24]. Compared to the prior art, however, what is new and surprising for the person skilled in the art is that this coupling can be observed in the form of secondary fluorescence characteristics in an intensity curve of the fluorescence radiation (FL) of a large number of NV centers without microwave control and can therefore be used in a technically significantly simplified manner. In particular, their distance in the intensity fluorescence curve is fixed.

Since the conversion rate from P1 centers to NV centers in the production of NV centers in diamond (HDNV) is only in the low percentage range, the exemplary diamond from the preliminary tests also has many NV-P1 pairs with a pairing distance below a threshold which cross relaxation (CR) occurs. This threshold of the strength of the magnetic flux density B of the external magnetic field is about 51mT for aligned NV centers. Due to the anisotropic hyperfine interaction of the electron spin of the P1 defect with its intrinsic nuclear nitrogen spin, the observed splitting of the decrease (E _51.0 ) in the intensity of the fluorescence radiation (PL-Dip) results [25-27]. Compared to the prior art, however, it is new and surprising for the person skilled in the art that this coupling can be observed in an intensity curve of the fluorescence radiation of a large number of NV centers in HD-NV diamonds (HDNV) without microwave activation and can therefore be used technically.

With increasing NV density, the mean distance between them decreases, so that a sub-ensemble that can no longer be ignored falls below a critical distance (a few nm) to a neighboring NV center. If only one of the two NV centers of such a pair of NV centers is aligned, a flux density B of the external magnetic field of about 59.5 mT leads to a CR between them and thus to a reduction in the intensity of the fluorescence radiation of the aligned NV center [28] in the form of a corresponding fluorescent feature (E _59.5.0 ). If the magnetic field is not perfectly aligned with an NV axis, three sub-ensembles of pairs result with different angles relative to the aligned magnetic field.

Accordingly, this fluorescence radiation characteristic splits into three pits in the intensity value curve of fluorescence radiation (FL) depending on the strength of the flux density B of the external magnetic field (see e.g. 12 for 3° offset). The remarkable thing is that this splitting occurs without microwave excitation.

Another configuration of an NV-NV pair is when both constituents are oriented in the same direction. In this case they are magnetically equivalent. Then, when aligned along the magnetic field at about 34 mT, the distances of the three spin-state energy levels of the ³ A ₂ ground state become equal [29, 30]. However, CR of these two transitions (| m>: | 0>↔| 1> and | -1>↔| +1>) is forbidden because the spin is not conserved in this flip-flop process. The transition is allowed when the energy level functions involved change from pure states (| 0>, |±1>) to line combinations of the triplet states. This happens, on the one hand, when the alignment of the NV centers no longer corresponds to that of the external magnetic field, or, on the other hand, when there is a perturbation of the states, such as an interaction with at least one other spin. In the measurement available from the preliminary experiments, the alignment of the NV centers with respect to the magnetic field is better than 1°, so that the observation of this fluorescence radiation feature can only be attributed to NV-NV CR if an interaction with a different spin is assumed. 6 ( 2c the pre-registration DE 10 2021 114 589.9) shows a detailed scan of this feature. For an analysis of the splitting, a linear background was subtracted from the measured signal and fitted with a symmetric multi-Gaussian function ( 7 , 2d the pre-registration DE 10 2021 114 589.9). The similarity of the resonance structure with the GSLAC feature at ca. 102 mT indicates that there may be an interaction with neighboring ¹³ C spins [10]. It should also be noted that this fluorescence emission feature (E _34.0 ) is only expected at moderate laser powers, so only one of the two NV centers was hyperpolarized in the |0> state.

For the decay of the intensity of the fluorescence radiation (FL) at values of the flux density B of the external magnetic field below 10 mT, the authors propose dipolar couplings between neighboring NV centers, for example with a distance d ≤ 15 nm between these two neighboring NV centers , before [31, 32]. However, a closer look reveals further substructures that cannot be explained in this way ( 9 , 2e the pre-registration DE 10 2021 114 589.9). The authors tried to reproduce these reductions in fluorescence intensity (FL) by various model calculations, e.g. B. CR of NV-P1, NV-NV or even between the negative and neutral charge state of the NV center (NV ^- -NV ⁰ ). None of the models could satisfactorily explain the observed resonances at low magnetic fields (B < 14 mT). Thus, the origin of these fluorescence radiation features (E _0,0 ) remains unknown at this time.

the 12 , 13 ( 3a and 3c the pre-registration DE 10 2021 114 589.9) show a series of fluorescence radiation measurements for different magnetic field ranges at different offset angles. 12 ( 3a the pre-registration DE 10 2021 114 589.9) shows a section (0° to 10°) from a measurement series of offset angles up to 111° in 1° increments. As the angle increases, the fluorescent radiation characteristics described above become less pronounced. The angle-dependent fluorescence contrast, ie the difference between the maximum value and the minimum value of the intensity value curve, decreases rapidly with increasing misalignment, which can be attributed to mixing of the spin states of the originally aligned NV centers.

For the maximum fluorescence radiation intensity around 5 mT, dips appear at about 40° and 60°, which could be explained by a reapproach of an initially unaligned NV axis to the magnetic field vector.

For the magnetic field range around 34 mT, in which auto-CP of the NV centers occurs, detailed measurements from -8° to 8° tilt angles were recorded prior to the invention ( 13 , 3c the pre-registration DE 10 2021 114 589.9). From this, the exact magnetic field position of this feature was then extracted. For this purpose, a symmetrical multi-Gaussian function was fitted to the curve for each magnetic field scan (cf. 7 , 2d the pre-registration DE 10 2021 114 589.9) and the resulting position plotted as a function of the angle ( 15 , 3d the pre-registration DE 10 2021 114 589.9). A comparison with numerically calculated values for the immersion position shows a basic agreement in the course of the curve.

However, the calculated value of the magnetic field deviates from the measured value by 0.3mT and the curvature of the curves does not match exactly either. The reason for this could be that the calculation takes into account the coupling with additional spins, e.g. B. ¹³ C spins, was not considered. In addition, it is known that strong internal stresses can occur in diamonds, which lead to a shift in the energy levels and thus also in the energetic resonances that lead to CR. Due to the geometry and the optical absorption of the sample, it is not possible to perform optical cross-polarization measurements that could indicate internal stresses, so we cannot rule this out for the measured sample.

Summary of the results of the preliminary tests and outlook

An NV-rich diamond (HD-NV diamond) was prepared by electron beam irradiation and attached to the end of an optical fiber. Using the lock-in technique, angle-dependent photoluminescence could be recorded at magnetic fields between 0 mT and 111 mT. Couplings with different neighboring spins became visible by comparison with a fluorescence model for an ensemble of a large number of individual NV centers. In addition to the GSLAC and the coupling with neighboring P1 centers, a coupling between NV centers could also be demonstrated in the preliminary tests. By choosing moderate irradiation powers, the coupling of magnetically inequivalent NV centers could also be shown in addition to the coupling of magnetically equivalent NV centers.

Group I: Measurement of the tilt angle using a directionally adjustable magnetic field

For the magnetic field range below about 10 mT, there are further drops in the fluorescence measurements, for which no simple model with the above-mentioned spins could be found in the prior art. In future investigations, multi-spin interactions should not be ruled out as the cause of the unexplained fluorescence features. In particular, the possibility of three-spin coupling between NV-NV-P1 or NV-P1-P1 may arise at very high NV densities.

Fluorescence features within the meaning of the document presented here are, for example, the following fluorescence features of an HD-NV diamond or an HD-NV diamond area. number 9.5mT pair no . approx. position in mT Type Fluorescence Feature Category Eo, o 0 0.00 mT at least main fluorescent feature E _9.5.8a 8th 5.91 mT left edge minor fluorescent feature E _9.5.7a 7 6.70 mT Max minor fluorescent feature E _9.5.6a 6 6.95 mT at least minor fluorescent feature E _9.5.5a 5 7.21 mT Max minor fluorescent feature E _9.5.4a 4 7.85 mT at least minor fluorescent feature E _9.5.3a 3 8.12 mT Max minor fluorescent feature E _9.5.2a 2 8.43 mT at least minor fluorescent feature E _9.5.1a 1 8.82 mT Max minor fluorescent feature _E9.5.0 0 9.38 mT at least main fluorescent feature R _9.5.1b 1 10.05 mT Max minor fluorescent feature R _9.5.2b 2 10.55 mT at least minor fluorescent feature R _9.5.3b 3 11.10 mT Max minor fluorescent feature R _9.5.4b 4 11.60 mT at least minor fluorescent feature R _9.5.5b 5 11.89 mT Max minor fluorescent feature R _9.5.6b 6 12.12 mT at least minor fluorescent feature E _34.11a 11 31.22 mT Max minor fluorescent feature E _34.10a 10 31.67 mT at least minor fluorescent feature E _34.9a 9 31.78 mT Max minor fluorescent feature E _34.8a 8th 32.00 mT at least minor fluorescent feature E _34.7a 7 32.25 mT Max minor fluorescent feature E _34.6a 6 32.63 mT at least minor fluorescent feature E _34.5a 5 32.72 mT Max minor fluorescent feature E _34.4a 4 32.96 mT at least minor fluorescent feature E _34.3a 3 33.24 mT Max minor fluorescent feature E _34.2a 2 33.53 mT at least minor fluorescent feature E _34.1a 1 33.65 mT Max minor fluorescent feature _E34.0 0 33.98 mT at least main fluorescent feature E _34.1b 1 34.28 mT Max minor fluorescent feature E _34.2b 2 34.38 mT at least minor fluorescent feature E _34.3b 3 34.72 mT Max minor fluorescent feature E _34.4b 4 34.97 mT at least minor fluorescent feature E _34.5b 5 35.24 mT Max minor fluorescent feature E _34.6b 6 35.35 mT at least minor fluorescent feature E _34.7b 7 35.74 mT Max minor fluorescent feature E _34.8b 8th 36.03 mT at least minor fluorescent feature E _34.9b 9 36.30 mT Max minor fluorescent feature E _34.10a 10 36.44 mT at least minor fluorescent feature E _34.11b 11 36.67 mT Max minor fluorescent feature _E34 , _12b 12 36.80 mT at least minor fluorescent feature E _34.13b 13 36.97 mT at least minor fluorescent feature _E51.0 0 51.00 mT at least main fluorescent feature _E59.5.0 0 59.50 mT at least main fluorescent feature E _102.4.9a 9 97.10 mT Max minor fluorescent feature E _102.4.8a 8th 97.60 mT at least minor fluorescent feature E _102.4.7a 7 98.00 mT Max minor fluorescent feature E _102.4.6a 6 98.40 mT at least minor fluorescent feature E _102.4.5a 5 98.90 mT Max minor fluorescent feature E _102.4.4a 4 99.50 mT at least minor fluorescent feature E _102.4.3a 3 100.10 mT Max minor fluorescent feature E _102.4.2a 2 101.10 mT at least minor fluorescent feature E _102.4.1a 1 101.80 mT Max minor fluorescent feature _E102.4.0 0 102.40 mT at least main fluorescent feature E _102.4.1b 1 103.10 mT Max minor fluorescent feature _E102 . ₄ , _2b 2 103.80 mT at least minor fluorescent feature _E102 . ₄ , _3b 3 104.80 mT Max minor fluorescent feature E _102.4.4b 4 105.50 mT at least minor fluorescent feature E _102.4.5b 5 106.10 mT Max minor fluorescent feature E _102.4.6b 6 106.60 mT at least minor fluorescent feature E _102.4.7b 7 107.00 mT Max minor fluorescent feature E _102.4.8b 8th 107.30 mT at least minor fluorescent feature E _102.4.9b 9 107.70 mT Max minor fluorescent feature

The values in this table are taken from the attached drawings. In the case of rework, the document presented here expressly recommends considering a remeasurement of the relevant fluorescence characteristics in order to rule out possible reading errors etc. and to achieve the maximum resolution.

• • Bereitstellen eines HD-NV-Diamanten (HDNV);
• • Bereitstellen einer Magnetfeldquelle (MGx, MGy, MGz) mit einer gegenüber dem HD-NV-Diamanten (HDNV) einem um den Kippwinkel gegenüber dem Diamanten mechanisch oder elektrisch verkippbaren magnetischen Feld mit einer magnetischen Flussdichte (B) mit einer Richtung der magnetischen Flussdichte (B);
• • Bestrahlen des HD-NV-Diamanten (HDNV) mit Pumpstrahlung (LB);
• • Erfassen der Intensität der Fluoreszenzstrahlung (FL) des HD-NV-Diamanten (HDNV);
• • Bilden eines Messwerts für die Intensität der Fluoreszenzstrahlung (FL) des HD-NV-Diamanten (HDNV);
• • gekennzeichnet dadurch
• • dass die Magnetfeldquelle (MGx, MGy, MGz) am Ort des HD-NV-Diamanten (HDNV) ein Magnetfeld bei einem Kippwinkel von 0° eine magnetische Flussdichte (B) erzeugt, die einer magnetischen Flussdichte (B) entspricht, die zu einem Intensitätsabfall der Intensität der Fluoreszenzstrahlung (FL) innerhalb eines Fluoreszenzmerkmals führt und
• • wobei ein Fluoreszenzmerkmal ein Extremum der Kurve der Intensität der Fluoreszenzstrahlung (FL) in Abhängigkeit von dem Betrag der magnetischen Flussdichte (B) am Ort des HD-NV-Diamanten ist, das durch den charakteristischen Betrag der magnetischen Flussdichte (B) an diesem charakteristischen Extremum gekennzeichnet ist, und
• • dass die Änderung des Kippwinkels abweichend von einem Kippwinkel von 0° zur einer Zunahme der Intensität der Fluoreszenzstrahlung (FL) gegenüber der der Intensität der Fluoreszenzstrahlung (FL) bei einem Kippwinkel von 0° führt.

As an application of the observed effects, a method for detecting a tilt angle with the following steps is proposed here:

• • Provide a HD NV Diamond (HDNV);
• • Provision of a magnetic field source (MGx, MGy, MGz) with a magnetic field that can be mechanically or electrically tilted relative to the HD-NV diamond (HDNV) by the tilt angle relative to the diamond, with a magnetic flux density (B) with a direction of the magnetic flux density ( B);
• • irradiating the HD-NV diamond (HDNV) with pump radiation (LB);
• • detecting the intensity of the fluorescence radiation (FL) of the HD-NV diamond (HDNV);
• • forming a fluorescence radiation (FL) intensity reading of the HD-NV diamond (HDNV);
• • Characterized by
• • that the magnetic field source (MGx, MGy, MGz) at the location of the HD-NV diamond (HDNV) generates a magnetic field at a tilt angle of 0° with a magnetic flux density (B) that corresponds to a magnetic flux density (B) that leads to a Intensity drop in the intensity of the fluorescence radiation (FL) within a fluorescence feature and
• • where a fluorescence feature is an extremum of the curve of the intensity of the fluorescence radiation (FL) versus the magnitude of the magnetic flux density (B) at the location of the HD-NV diamond, which is characterized by the characteristic magnitude of the magnetic flux density (B) at that characteristic extremum is marked, and
• • that the change in the tilt angle deviating from a tilt angle of 0° leads to an increase in the intensity of the fluorescence radiation (FL) compared to the intensity of the fluorescence radiation (FL) at a tilt angle of 0°.

• • Bereitstellen eines HD-NV-Diamanten (HDNV);
• • Bereitstellen einer Magnetfeldquelle (MGx, MGy, MGz) mit einem einer gegenüber dem HD-NV-Diamanten (HDNV) um den Kippwinkel gegenüber dem HD-NV-Diamanten (HDNV) mechanisch oder elektrisch verkippbaren magnetischen Feld mit einer magnetischen Flussdichte (B) mit einer Richtung der magnetischen Flussdichte (B);
• • Bestrahlen des HD-NV-Diamanten (HDNV) mit modulierter Pumpstrahlung (LB), wobei die modulierte Pumpstrahlung (LB) mit einer Modulation in ihrer Intensität in ihrem zeitlichen Verlauf moduliert ist;
• • Erfassen einer eines zeitlichen Verlaufs der Intensität der Fluoreszenzstrahlung (FL) des HD-NV-Diamanten;
• • Ermitteln der zeitlichen Verzögerung der erfassten Fluoreszenzstrahlung (FL) des HD-NV-Diamanten gegenüber der der Modulation der modulierten Pumpstrahlung (LB) aus dem erfassten zeitlichen Verlauf der Intensität der Fluoreszenzstrahlung (FL) des HD-NV-Diamanten (HDNV);
• • Bilden eines Messwerts für die erfasste zeitliche Verzögerung der erfassten Fluoreszenzstrahlung (FL) des HD-NV-Diamanten als Verzögerungswert;

gekennzeichnet dadurch

• • dass die Magnetfeldquelle (MGx, MGy, MGz) am Ort des HD-NV-Diamanten (HDNV) bei einem Kippwinkel von 0° ein Magnetfeld mit einer magnetischen Flussdichte (B) erzeugt, die einer magnetischen Flussdichte entspricht, die zu einem Verzögerungswertanstieg des Verzögerungswerts der Fluoreszenzstrahlung (FL) innerhalb eines Fluoreszenzmerkmals führt,
• • wobei ein Fluoreszenzmerkmal ein Extremum der Kurve der Intensität der Fluoreszenzstrahlung (FL) in Abhängigkeit von dem Betrag der magnetischen Flussdichte (B) am Ort des HD-NV-Diamanten ist, dass durch den Betrag der magnetischen Flussdichte an diesem Extremum gekennzeichnet ist, und
• • dass die Änderung des Kippwinkels abweichend von einem Kippwinkel von 0° zur einer Verzögerungswertabnahme des Verzögerungswerts der Fluoreszenzstrahlung (B) gegenüber dem Verzögerungswert der Fluoreszenzstrahlung bei einem Kippwinkel von 0° führt.

Since the intensity of the fluorescence radiation depends on the afterglow duration, the method for detecting a tilt angle can also be carried out somewhat differently in an analogous manner with the following steps:

• • Provide a HD NV Diamond (HDNV);
• • Provision of a magnetic field source (MGx, MGy, MGz) with a magnetic field with a magnetic flux density (B) that can be mechanically or electrically tilted relative to the HD-NV diamond (HDNV) by the tilt angle relative to the HD-NV diamond (HDNV). having a direction of magnetic flux density (B);
• • Irradiating the HD-NV diamond (HDNV) with modulated pump radiation (LB), the modulated pump radiation (LB) being modulated with a modulation in terms of its intensity over time;
• • detecting a time course of the intensity of the fluorescence radiation (FL) of the HD-NV diamond;
• • Determining the time delay of the detected fluorescence radiation (FL) of the HD-NV diamond compared to the modulation of the modulated pump radiation (LB) from the detected time profile of the intensity of the fluorescence radiation (FL) of the HD-NV diamond (HDNV);
• • Forming a measured value for the detected time delay of the detected fluorescence radiation (FL) of the HD-NV diamond as a delay value;

characterized by

• • that the magnetic field source (MGx, MGy, MGz) at the location of the HD NV diamond (HDNV) at a tilt angle of 0° generates a magnetic field with a magnetic flux density (B) that corresponds to a magnetic flux density that leads to a deceleration value increase of the retardation value of fluorescence radiation (FL) within a fluorescence feature,
• • wherein a fluorescence feature is an extremum of the curve of intensity of fluorescence radiation (FL) versus magnitude of magnetic flux density (B) at the location of the HD-NV diamond characterized by the magnitude of magnetic flux density at that extremum, and
• • that the change in the tilt angle deviating from a tilt angle of 0° leads to a decrease in the delay value of the delay value of the fluorescence radiation (B) compared to the delay value of the fluorescence radiation at a tilt angle of 0°.

Therefore, when the detection of the intensity of the fluorescence radiation (FL) is discussed in this document, two possible implementations are always meant. First, the value of the energy amplitude of the fluorescence (FL) of the NV centers can be simply used as the value of the intensity of the fluorescence (FL) of the NV centers when irradiated with pump radiation (LB). It is known that when using a pump radiation (LB) modulated with a modulation, this value of the energy amplitude of the fluorescence radiation (FL) of the NV centers is simultaneously reflected in a phase shift of the time course of the consequent modulation of the amplitude of the fluorescence radiation (FL) of the NV centers expresses. This phase shift shows up as a delay. The phase shift is smaller for larger fluorescence radiation (FL) intensities and larger for smaller ones. The fluorescence intensity (FL) can therefore be measured secondly by measuring the delay time of the modulation of the fluorescence radiation (FL) compared to the modulation of the pump radiation (LB) or the modulation of the modulation signal (S5). The modulation of the modulation signal (S5), for example, the Influence and/or determine the modulation of the intensity of the pump radiation (LB). If this document refers to a measurement of the intensity of the fluorescence radiation (FL), this can be done in these two ways, which may also be covered by the claims if they require or provide for an intensity measurement or detection.

A proposed device for detecting a tilt angle corresponds to the method specified above. Such a device preferably comprises an HD-NV diamond (HDNV), a magnetic field source (MGx, MGy, MGz), a pump radiation source (LD), a photodetector (PD) and an evaluation unit. The evaluation unit can include, for example, an amplifier and/or a lock-in amplifier (LIA) and other sub-devices. In this context, the document presented here refers, for example, to the description of 1 and the technical teachings of WO 2021 013 308 A1 . During operation of the device, the pump radiation source (LD) irradiates the HD-NV diamond (HDNV) with pump radiation (LB). The HD-NV diamond (HDNV) then emits fluorescence radiation (FL). The photodetector (PD) then detects the intensity of the fluorescence radiation (FL) of the HD-NV diamond (HDNV) and forms a reception signal (S0) depending on the intensity of the fluorescence radiation (FL). Typically, the time course of the value of the received signal (S0) represents the time course of the intensity of the fluorescence radiation (FL) hitting the photodetector (PD). The device preferably comprises means, for example an optical filter (F1), which prevent pump radiation (LB) from hitting the photodetector (PD) directly. Such a filter (F1) is preferably sufficiently transparent for radiation with the fluorescence radiation wavelength of the fluorescence radiation (FL) and sufficiently opaque for radiation with the pump radiation wavelength of the pump radiation (LB). An optical barrier should preferably shield the photodetector (PD) and the optical filter (F1) from extraneous light. For example, a layer of lacquer can form such a barrier if the optical filter (F1) and the photodetector (PD) form a unit. The evaluation unit, in particular a lock-in amplifier (LIA) of the evaluation unit, uses the received signal (S0) to form a measured value for the intensity of the fluorescence radiation (FL) of the HD-NV diamond (HDNV). Typically, the evaluation unit uses the time sequence of the values of the received signal (S0) to form a time sequence of measured values for the intensity of the fluorescence radiation (FL) of the HD-NV diamond (HDNV). The measured value can be a parameter value of an output signal from the evaluation unit (LIA). A measured value sequence can be a parameter value sequence of an output signal from the evaluation unit (LIA). In this variant, the magnetic field source (MGx, MGy, MGz) generates a magnetic field with a flux density (B) that can be mechanically or electrically tilted by the tilt angle compared to the HD-NV diamond (HDNV). The magnetic field source (MGx, MGy, MGz) generates a magnetic field with a magnetic flux density (B) at the location of the HD-NV diamond (HD-NV) at a tilt angle of 0°, which corresponds to a magnetic flux density (B) that leads to a reduction in the amount of the measured value as a result of a drop in intensity of the intensity of the fluorescence radiation (FL) within a fluorescence feature. The document presented here understands a fluorescence feature as an extremum of the curve of the intensity of the fluorescence radiation (FL) as a function of the magnitude of the magnetic flux density (B) at the location of the HD-NV diamond (HDNV). Such a fluorescence feature is typically characterized by the magnitude of the magnetic flux density at this extremum. The change in the tilt angle deviating from a tilt angle of 0° then leads to an increase in the measured value as a result of the increase in the intensity of the fluorescence radiation (FL) compared to the intensity of the fluorescence radiation (FL) at a tilt angle of 0°. The measured value then represents a value that depends on the tilt angle.

As before, a device for detecting a flip angle can be specified in an analogous manner, which results from an evaluation of the time delay of the temporal intensity value curve of the modulation of the intensity of the fluorescence radiation (FL) compared to the modulation of the intensity of the pump radiation (LB). The proposed second device preferably again comprises an HD-NV diamond (HDNV), a magnetic field source (MGx, MGy, MGz), a pump radiation source (LD), a photodetector (PD) and an evaluation unit, which again in particular has an amplifier and/or may include a lock-in amplifier (LIA). Again, the pump radiation source (LD) at least temporarily irradiates the HD-NV diamond (HDNV) with pump radiation (LB). In contrast to the device described above, however, the intensity of the pump radiation (LB) is now modulated over time with a modulation. This is necessary so that a measuring device can actually measure the delay in the intensity value profile over time of the modulation of the intensity of the fluorescence radiation (FL) compared to the modulation of the intensity of the pump radiation (LB). The HD-NV diamond (HDNV) now emits fluorescence radiation (FL), which is modulated out of phase with this modulation signal. The photodetector (PD) records the intensity of the fluorescence radiation (FL) of the HD-NV diamond (HDNV) over time. Depending on the intensity of the fluorescence radiation (FL), the photodetector (PD) then forms a received signal (ES) with a time profile of the intensity value of the detected intensity of the fluorescence radiation (FL) of the HD-NV diamond (HDNV). Received signal (ES) indicates the course over time of the intensity value of the detected intensity of the fluorescence radiation (FL) of the HD-NV diamond (HDNV) substantially typically. From the received signal (ES), the evaluation unit forms a measured value for the time delay of the time profile of the intensity value of the fluorescence radiation (FL) of the HD-NV diamond (HDNV) compared to the time profile of the modulation of the pump radiation (LB). The measured value can be a parameter value of an output signal from the evaluation unit (LIA). The magnetic field source (MGx, MGy, MGz) generates a magnetic field that can be tilted mechanically or electrically by the tilt angle compared to the HD-NV diamond (HDNV) and has a directional magnetic flux density (B). The magnetic field source (MGx, MGy, MGz) generates a magnetic field with a magnetic flux density (B) at the location of the HD-NV diamond (HDNV) at a tilt angle of 0°, which corresponds to a magnetic flux density that leads to an increase in the measured value the delay of fluorescence radiation (FL) within a fluorescent feature. According to the technical teaching of this document presented here, a fluorescence feature is an extremum of the curve of the intensity of the fluorescence radiation (FL) as a function of the magnitude of the magnetic flux density (B) at the location of the HD-NV diamond (HDNV). The magnitude of the magnetic flux density (B) at this extremum characterizes the fluorescent feature in question. A change in the tilt angle from a tilt angle of 0° to a tilt angle deviating from the tilt angle of 0° leads to a decrease in the measured value of the time delay of the intensity curve of the fluorescence radiation (FL) compared to the measured value of the time delay of the intensity curve of the fluorescence radiation a tilt angle of 0°. The measured value of the time delay of the modulation of the intensity profile of the fluorescence radiation (FL) compared to the time modulation of the pump radiation (LB) thus represents a value that depends on the flip angle. Therefore, the technical teaching of the document presented here proposes using this measured value of the time delay of the modulation of the intensity curve of the fluorescence radiation (FL) compared to the time modulation of the pump radiation (LB) as a measured value of the flip angle.

Group II: Measurement of the tilt angle using a directionally adjustable crystal

In contrast to the methods and devices described in Group I, the following section describes methods and devices in which, for example, an alignment device tilts the crystal with the paramagnetic centers, ie for example the NV centers, with respect to the housing and the magnetic field.

• • Bereitstellen einer Magnetfeldquelle (MGx, MGy, MGz);
• • Bereitstellen eines Diamanten (HDNV);
• • Bestrahlen des Diamanten (HDNV) mit Pumpstrahlung (LB);
• • Erfassen der Intensität der Fluoreszenzstrahlung (FL) des paramagnetischen Zentrums des Diamanten (HDNV);
• • Bilden eines Messwerts für die Intensität der Fluoreszenzstrahlung (FL) des paramagnetischen Zentrums des Diamanten (HDNV);

First of all, the document presented here describes a method for detecting a tilt angle with the steps:

• • Providing a magnetic field source (MGx, MGy, MGz);
• • Providing a diamond (HDNV);
• • irradiating the diamond (HDNV) with pump radiation (LB);
• • detection of the intensity of the fluorescence radiation (FL) of the paramagnetic center of the diamond (HDNV);
• • taking a measure of the intensity of the fluorescence radiation (FL) of the diamond's paramagnetic center (HDNV);

The proposed method is characterized in particular by the fact that there is a tilt angle between the direction of the paramagnetic centers, in particular the NV centers, and the direction of the magnetic flux density B. The magnetic field source (MGx, MGy, MGz) at the location of the HD-NV diamond (HDNV) preferably generates a magnetic field at a tilt angle of 0° with a magnetic flux density (B) that corresponds to a magnetic flux density B that leads to a maximum Intensity drop in the intensity of the fluorescence radiation (FL) within a fluorescence feature. The document presented here therefore assumes that the design, manufacture and/or commissioning of the device has already optimally aligned the magnetic field beforehand. As before, for the purpose of the present specification, a fluorescent feature is an extremum of the curve of the intensity of the fluorescence radiation (FL) versus the magnitude of the magnetic flux density (B) at the location of the HD-NV diamond. As before, this fluorescence feature is typically characterized by the magnitude of the magnetic flux density B at this extremum. At a tilt angle of 0° between the direction of the magnetic flux density (B) and the direction of the relevant paramagnetic centers, the detected drop in intensity of the intensity of the fluorescence radiation (FL) is typically at a maximum. A change in the tilt angle of the magnetic field from a tilt angle of the magnetic field of 0° to a tilt angle deviating from the tilt angle of 0° typically results for an increase in the intensity of the fluorescence radiation (FL) compared to the intensity of the fluorescence radiation (FL) at a flip angle of 0°.

The diamond provided in this method comprises one or more paramagnetic centers or a pair of coupled paramagnetic centers or a plurality of pairs of coupled paramagnetic centers or clusters of paramagnetic centers. Preferably, the paramagnetic centers may be one or more diamond NV centers and/or one or more diamond ST1 centers and/or one or more diamond TR12 centers and/or one or more diamond TR12 centers and/or one or more SiV centers in diamond and/or one or more GeV centers in diamond and/or one or more pairs of NV centers in diamond and/or one or more pairs of ST1 centers in diamond and/or or one or more pairs of TR12 centers in diamond and/or one or more pairs of SiV centers in diamond and/or one or more pairs of GeV centers in diamond. On the book by A.M. Zaitsev "Optical Properties of Diamond, A Data Handbook", Springer 2001 ISBN 978-3-662-04548-0 is referenced here. The diamond (HDNV) is now mechanically or electrically rotatable by a first device tilt angle (α) about a first X tilt axis (AXx) relative to the direction of the magnetic flux density (B) of the magnetic field of the magnetic field source (MGx, MGy, MGz). Furthermore, the diamond (HDNV) is preferred, but not necessarily, to the direction of the magnetic flux density (B) of the magnetic field of the magnetic field source (MGx, MGy, MGz) by a second device tilt angle (β) about a second Y-tilt axis (AXy) mechanically or electrically rotatable. In addition, the diamond (HDNV) is preferably but not necessarily mechanical to the direction of the magnetic flux density (B) of the magnetic field of the magnetic field source (MGx, MGy, MGz) by a third device tilt angle (y) about a third Z-tilt axis (AXz). or electrically rotatable. Within the meaning of this document, simultaneous translational movements and/or movement options may be possible. A hexapod mount of the diamond would also meet these conditions.

• • Bereitstellen einer Magnetfeldquelle (MGx, MGy, MGz);
• • Bereitstellen eines Diamanten (HDNV);
• • wobei der Diamant ein paramagnetisches Zentrum umfasst und
• • Bestrahlen des Diamanten (HDNV) mit modulierter Pumpstrahlung (LB);
• • Erfassen einer eines zeitlichen Verlaufs der Intensität der Fluoreszenzstrahlung (FL) des paramagnetischen Zentrums des Diamanten;
• • Ermitteln der zeitlichen Verzögerung der erfassten Fluoreszenzstrahlung (FL) des paramagnetischen Zentrums des Diamanten (HDNV) gegenüber der der Modulation der modulierten Pumpstrahlung (LB) aus dem erfassten zeitlichen Verlauf der Intensität der Fluoreszenzstrahlung (FL) des paramagnetischen Zentrums des Diamanten (HDNV);
• • Bilden eines Messwerts für die erfasste zeitliche Verzögerung der erfassten Fluoreszenzstrahlung (FL) des paramagnetischen Zentrums des Diamanten als Verzögerungswert.

Analogously, a method for detecting a tilt angle can now be specified in which an alignment device mechanically tracks the crystal with the paramagnetic centers and in which an evaluation device evaluates the delay in the modulation of the fluorescence radiation (FL) compared to the modulation of the pump radiation. Compared to pure amplitude control, such controls have the advantage that when measuring the delay time, the time difference between a reference signal and the received signal (S0) can be corrected to 0s, which typically improves the control resolution by about an order of magnitude. The writing presented here refers to the writing here in this context WO 2017 148 772 A1 . A method modified in this way for detecting a tilt angle preferably comprises the steps:

• • Providing a magnetic field source (MGx, MGy, MGz);
• • Providing a diamond (HDNV);
• • wherein the diamond includes a paramagnetic center and
• • irradiating the diamond (HDNV) with modulated pump radiation (LB);
• • detecting a time course of the intensity of the fluorescence radiation (FL) of the paramagnetic center of the diamond;
• • Determining the time delay of the detected fluorescence radiation (FL) of the paramagnetic center of the diamond (HDNV) compared to the modulation of the modulated pump radiation (LB) from the detected time profile of the intensity of the fluorescence radiation (FL) of the paramagnetic center of the diamond (HDNV);
• • Forming a measured value for the detected time delay of the detected fluorescence radiation (FL) of the paramagnetic center of the diamond as a delay value.

According to the proposal, the method is characterized in that there is a tilt angle between the direction of the paramagnetic centers, in particular the NV centers, and the direction of the magnetic flux density B. The magnetic field source (MGx, MGy, MGz) again generates a magnetic field with a magnetic flux density (B) at the location of the HD-NV diamond (HDNV) at a tilt angle of 0°. In this case, this magnetic flux density (B) then preferably corresponds to such a magnetic flux density (B) that leads to an increase in the deceleration value of the detected deceleration value of the fluorescence radiation (FL) within a fluorescence feature. For the purposes of this document, a fluorescence feature is then an extremum of the curve of the intensity of the fluorescence radiation (FL) as a function of the magnitude of the magnetic flux density (B) at the location of the HD-NV diamond. The fluorescence feature is typically through the The magnitude of the magnetic flux density at this extremum is marked. At a flip angle of 0° between the direction of the magnetic flux density (B) and the direction of the relevant paramagnetic centers, the detected deceleration value is typically maximum. A change in the tilt angle from a tilt angle of 0° to a new tilt angle deviating from the tilt angle of 0° then leads to a decrease in the retardation value of the retardation value of the fluorescence radiation (B) compared to the retardation value of the fluorescence radiation at a flip angle of 0°.

In this method, too, the diamond provided comprises a paramagnetic center and/or a plurality of paramagnetic centers and/or a cluster of paramagnetic centers and/or a coupled pair of paramagnetic centers and/or a plurality of coupled pairs of paramagnetic centers and/or a cluster of coupled pairs of paramagnetic centers . Preferably, the paramagnetic center is one or more NV centers in diamond, or one or more ST1 centers in diamond, or one or more SiV centers, or one or more GeV centers in diamond, or one or more TR12 centers in diamond or one or more coupled pairs of NV centers in diamond, or one or more coupled pairs of ST1 centers in diamond, or one or more coupled pairs of TR12 centers in diamond, or one or more coupled pairs of SiV centers in diamond, or one or more coupled pairs of GeV centers in diamond. The diamond (HDNV) is now mechanically or electrically rotatable by a first device tilt angle (α) about a first X tilt axis (AXx) relative to the direction of the magnetic flux density (B) of the magnetic field of the magnetic field source (MGx, MGy, MGz). Furthermore, the diamond (HDNV) is preferred, but not necessarily, to the direction of the magnetic flux density (B) of the magnetic field of the magnetic field source (MGx, MGy, MGz) by a second device tilt angle (β) about a second tilt axis (AXy) mechanically or electrically rotatable. In addition, the diamond (HDNV) is preferably but not necessarily opposite to the direction of the magnetic flux density (B) of the magnetic field of the magnetic field source (MGx, MGy, MGz) by a third device tilt angle (γ) about a third tilt axis (AXz) mechanically or electrically pivoted. Within the meaning of this document, simultaneous translational movements and/or movement options may be possible. A hexapod mount of the diamond would also meet these conditions. The intensity of the modulated pump radiation (LB) is now modulated over time with a modulation. This again makes it possible to detect a phase shift or a time delay in the modulation of the intensity of the fluorescence radiation (FL) compared to the modulation of the intensity of the pump radiation (LB). For example, it can be a pulse modulation. For example, it can be a pulse-width modulation (PWM modulation for short). However, pulse amplitude modulation (PAM), pulse code modulation (PCM), pulse frequency modulation (PFM), pulse-pause modulation (PPM), pulse-phase modulation (PPM), pulse-position modulation (PPM) are also known. The pulse code modulation (PCM) is of particular importance in the measurement methods of the technical teaching of this document. The methods and devices of the technical teaching presented here preferably use spread codes as PCM modulation codes. It is preferably a random spread code such as is generated by so-called TRNG generators, for example. This prevents attackers from interfering with the measurement result through so-called side channels. Typically, a waveform generator (WFG) with a freely programmable waveform generates your modulation signal with the desired modulation. This modulation signal then controls the pump radiation source (LD), which then typically radiates a correspondingly modulated pump radiation (LB) onto the crystal (HDNV) with the paramagnetic centers (NV). The waveform generator (WFG) preferably also makes this modulation signal available to the evaluation device. The crystal with the paramagnetic centers emits the modulated fluorescence radiation (FL) when irradiated with pump radiation (LB). The photodetector captures this modulated fluorescence radiation (FL) and converts it into a modulated received signal (S0). From the modulation signal and the received signal (S0), the evaluation device determines a value or value profile of the time delay of the modulation of the received signal (S0) compared to the modulation of the modulation signal.

In a further development of the two methods described above, the paramagnetic center comprises one or more NV centers in diamond and/or one or more ST1 centers in diamond and/or one or more TR12 centers in diamond and/or one or more SiV Centers in diamond and/or one or more GeV centers in diamond and/or one or more coupled NV center pairs in diamond and/or one or more coupled SiV center pairs in diamond and/or one or more coupled GeV -center pairs in diamond and/or one or more coupled pairs of ST1 centers and/or one or more coupled pairs of TR12 centers and/or one or more pairs of coupled paramagnetic centers. In general, the technical teaching of the document presented here assumes that the paramagnetic center is one or more NV centers in diamond and/or one or more ST1 centers in diamond and/or one or more TR12 centers in diamond and/or one or meh rere SiV centers in diamond and/or one or more coupled pairs of NV centers in diamond and/or one or more pairs of coupled SiV centers in diamond and/or one or more pairs of coupled GeV centers in diamond and/or or one or more ST1 coupled center pairs and/or one or more TR12 coupled center pairs and/or one or more coupled paramagnetic center pairs.

The two methods described above and their development enable the determination of tilt angles of a corresponding device in relation to a magnetic field source with high accuracy, with the device then carrying out the respective method.

A device for detecting a tilt angle thus corresponds to the first of the two methods described immediately above. This device typically again comprises a diamond (HDNV), a magnetic field source (MGx, MGy, MGz), a pump radiation source (LD), a photodetector (PD), an alignment device (DMT, RT, HLT) and an evaluation unit. The evaluation unit can include an amplifier and/or a lock-in amplifier (LIA), for example. As before, we again assume that the diamond has a paramagnetic center. The pump radiation source (LD) irradiates the HD-NV diamond (HDNV) with pump radiation (LB) with a pump radiation wavelength (λ _pmp ). The paramagnetic center of the diamond (HDNV) then emits fluorescence radiation (FL) with a fluorescence radiation wavelength (λ _fl ). The photodetector (PD) detects the intensity of the fluorescence radiation (FL) of the diamond's paramagnetic center (HDNV). The photodetector (PD) forms a received signal (S0) depending on the intensity of the fluorescence radiation (FL). The time profile of the received signal (S0) typically reflects the time profile of the intensity of the fluorescence radiation (FL) that hits the photodetector (PD). From the value curve of the received signal (S0), the evaluation unit forms a measured value and/or a measured value curve over time for the intensity of the fluorescence radiation (FL) of the paramagnetic center of the diamond (HDNV) or for the intensity curve of the fluorescence radiation (FL) of the paramagnetic center of the diamond (HDNV). The evaluation device particularly preferably comprises a lock-in amplifier (LIA) and/or another form of a correlator or a synchronous demodulator. The evaluation device is typically designed in such a way that it determines the components of the modulation signal, with which the pump radiation source (LD) is modulated, in the received signal (S0). The evaluation device can therefore also include a matched filter or an optimal filter that is optimized for a predetermined modulation signal. The evaluation unit can also include an estimation filter, in particular a Kalman filter, which filters the determined intensity and delay values to form filtered intensity and delay values. These possible features of the evaluation unit can be applied analogously throughout the document presented here.

The measured value can thus be a parameter value of an output signal from the evaluation unit (LIA). The alignment device (DMT, RT, HLT) can again preferentially tilt the diamond (HDNV) to the direction of the magnetic flux density (B) of the magnetic field of the magnetic field source (MGx, MGy, MGz) by a first device tilt angle (α) by a first X Rotate the tilting axis (AXx) mechanically or electrically. The alignment device (DMT, RT, HLT) can again preferably, but not necessarily, tilt the diamond (HDNV) relative to the direction of the magnetic flux density (B) of the magnetic field of the magnetic field source (MGx, MGy, MGz) by a second device tilt angle (β) rotate mechanically or electrically about a second tilting axis (AXy). Again, the alignment device (DMT, RT, HLT) may preferably, but not necessarily, tilt the diamond (HDNV) relative to the direction of the magnetic flux density (B) of the magnetic field of the magnetic field source (MGx, MGy, MGz) by a third device tilt angle (γ) rotate mechanically or electrically about a third tilting axis (AXz). The alignment device is therefore preferably in the sense of this document, if present, preferably always a single-circle, double-circle or triple-circle goniometer (MEMSG). Additionally, the alignment device (DMT, RT, HLT) can optionally translate the diamond (HDNV) in one or more directions simultaneously, if desired. Accordingly, a hexapod can also be used as an alignment device. An alignment device within the meaning of the document presented here can also be a combination of a one-, two- or three-circle goniometer (MEMSG) on the one hand with a one-, two- or three-dimensional linear displacement device, for example an xyz cross table, on the other hand act. There is then a tilt angle between the direction of the paramagnetic center and the direction of the magnetic flux density B. The document presented here defines the tilt angle in such a way that the magnetic field source (MGx, MGy, MGz) generates a magnetic field with a magnetic flux density (B) at the location of the HD-NV diamond (HD-NV) at a tilt angle of 0°, which corresponds to a magnetic flux density (B) that leads to a maximum absolute value reduction of the measured value as a result of an intensity drop in the intensity of the fluorescence radiation (FL) within a fluorescence feature. With a tilt angle of 0° and a suitable magnetic flux density B at the location of the paramagnetic center or the crystal the intensity of the fluorescence radiation (FL) is thus minimal and the time delay of a modulation of the intensity of the fluorescence radiation (FL) compared to the modulation of the intensity of the pump radiation (LB) or the associated modulation signal (S5) is maximal. As already described several times, a fluorescence feature is an extremum of the curve of the intensity of the fluorescence radiation (FL) as a function of the magnitude of the magnetic flux density (B) at the location of the HD-NV diamond (HDNV). A fluorescence feature within the meaning of the document presented here is characterized by the magnitude of the magnetic flux density (B) at this extremum. A change in the tilt angle, for example by means of the alignment device from a tilt angle of 0° to a tilt angle deviating from the tilt angle of 0°, therefore leads to an increase in the measured value due to the increase in the intensity of the fluorescence radiation (FL) compared to the intensity of the fluorescence radiation (FL) at a tilt angle of 0°. The measured value thus represents a value that depends on the tilt angle. The measured value thus corresponds to a measured value of the tilt angle.

The second of the two methods described immediately above thus corresponds to a second device for detecting a tilt angle, which is now based on detecting the delay time of the time profile of the modulation of the intensity of the fluorescence radiation (FL) compared to the modulation of the pump radiation (LB) and/or the modulation signal is based. This second tilt angle sensing device typically comprises a diamond. The diamond is preferably a HD-NV diamond (HDNV) or a diamond with a zone that corresponds to a HD-NV diamond, ie is a HD-NV diamond zone. This second device again preferably comprises a magnetic field source (MGx, MGy, MGz), a pump radiation source (LD), a photodetector (PD) and an evaluation unit. The above statements on the evaluation unit also apply here. The evaluation unit preferably again includes an amplifier and/or a lock-in amplifier (LIA). The lock-in amplifier (LIA) preferably records not only the amplitude, but also the phase, i.e. the time delay, of the modulation of the received signal (S0) of the photodetector (PD) compared to the modulation of the modulation signal with which the intensity of the pump radiation ( LB) of the pump radiation source (LD) is modulated. A waveform generator (WFV) with a preferably freely programmable waveform generates a modulation signal (S5). Depending on the modulation signal (S5), the pump radiation source (LD) generates pump radiation (LB) modulated with the modulation signal (S5). The device irradiates the diamond, which is preferably a den HD-NV diamond (HDNV), with pump radiation (LB) of a pump radiation wavelength (λ _pmp ). The intensity of the pump radiation (LB) is then typically temporally modulated with a modulation corresponding to the modulation signal (S5). The diamond, which is preferably an HD-NV diamond (HDNV), then emits fluorescence radiation (FL), which is then typically also modulated with the modulation signal (S5). However, the modulation of the fluorescence radiation (FL) is then typically temporal compared to the modulation signal (S5) due to The T2 times are delayed. The photodetector (PD) records the intensity of the diamond's fluorescence radiation (FL) over time (HDNV). The photodetector generates a received signal (ES) on the basis of this recorded time profile of the intensity of the fluorescence radiation (FL) of the diamond (HDNV) and as a function of this time profile of the intensity of the fluorescence radiation (FL). The received signal (ES) has a time profile of the intensity value of the detected intensity of the fluorescence radiation (FL) of the diamond (HDNV) as a time value profile of this received signal (ES). The evaluation unit forms a measured value for the time delay of the time profile of the intensity value of the fluorescence radiation (FL) of the diamond (HDNV) compared to the time profile of the modulation of the pump radiation (LB) from the received signal (ES). The measured value can be a parameter value of an output signal from the evaluation unit (LIA). However, the evaluation unit can also form a measured value profile for the time delay of the time profile of the intensity value of the fluorescence radiation (FL) of the diamond (HDNV) compared to the time profile of the modulation of the pump radiation (LB) from the received signal (ES). The course of the measured value can be a parameter value course of an output signal of the evaluation unit (LIA). Within a fluorescence feature, the intensity of the fluorescence radiation (FL) is reduced and the time delay of the modulation of the intensity of the fluorescence radiation (FL) compared to the modulation of the pump radiation (LB) or the modulation of the modulation signal (S5) is increased. Intensity and delay are thus expressly typically opposed.

The evaluation device particularly preferably comprises a lock-in amplifier (LIA) and/or another form of a correlator or a synchronous demodulator. The evaluation device is typically designed in such a way that it determines the components of the modulation signal, with which the pump radiation source (LD) is modulated, in the received signal (S0). The evaluation device can therefore also include a matched filter or an optimal filter that is optimized for a predetermined modulation signal. The evaluation unit can also include an estimation filter, in particular a Kalman filter, which filters the determined intensity and delay values to form filtered intensity and delay values. These possible features of the evaluation unit can be applied analogously throughout the document presented here. Of the Measured value can thus be a parameter value of an output signal of the evaluation unit (LIA). The alignment device (DMT, RT, HLT) can again preferentially tilt the diamond (HDNV) to the direction of the magnetic flux density (B) of the magnetic field of the magnetic field source (MGx, MGy, MGz) by a first device tilt angle (α) by a first X Rotate the tilting axis (AXx) mechanically or electrically. The alignment device (DMT, RT, HLT) can again preferably, but not necessarily, tilt the diamond (HDNV) relative to the direction of the magnetic flux density (B) of the magnetic field of the magnetic field source (MGx, MGy, MGz) by a second device tilt angle (β) rotate mechanically or electrically about a second tilting axis (AXy). Again, the alignment device (DMT, RT, HLT) may preferably, but not necessarily, tilt the diamond (HDNV) relative to the direction of the magnetic flux density (B) of the magnetic field of the magnetic field source (MGx, MGy, MGz) by a third device tilt angle (γ) rotate mechanically or electrically about a third tilting axis (AXz). The alignment device is therefore preferably in the sense of this document, if present, preferably always a single-circle, double-circle or triple-circle goniometer. Additionally, the alignment device (DMT, RT, HLT) can optionally translate the diamond (HDNV) in one or more directions simultaneously, if desired. Accordingly, a hexapod can also be used as an alignment device. An alignment device within the meaning of the document presented here can also be a combination of a one-, two- or three-circle goniometer (MEMSG) on the one hand with a one-, two- or three-dimensional linear displacement device, for example an xyz cross table, on the other hand act. There is then a tilt angle between the direction of the paramagnetic center and the direction of the magnetic flux density B. The document presented here defines the tilt angle in such a way that the magnetic field source (MGx, MGy, MGz) generates a magnetic field with a magnetic flux density (B) at the location of the HD-NV diamond (HD-NV) at a tilt angle of 0°, corresponding to a magnetic flux density (B) that results in a maximum maximization of the measurement of the delay due to a delay increase in the delay in the modulation of the intensity of the fluorescence radiation (FL) within a fluorescent feature versus the modulation of the modulation signal. With a tilt angle of 0° and a suitable magnetic flux density B at the location of the paramagnetic center or the crystal, the delay in the modulation of the intensity of the fluorescence radiation (FL) is therefore at a maximum. As already described several times, a fluorescence feature is an extremum of the curve of the intensity of the fluorescence radiation (FL) as a function of the magnitude of the magnetic flux density (B) at the location of the diamond (HDNV). A fluorescence feature within the meaning of the document presented here is characterized by the magnitude of the magnetic flux density (B) at this extremum. A change in the tilt angle, for example by means of the alignment device, from a tilt angle of 0° to a tilt angle deviating from the tilt angle of 0°, therefore leads to an increase in the measured value due to the increase in the delay in the modulation of the intensity of the fluorescence radiation (FL) compared to the delay in the modulation the intensity of the fluorescence radiation (FL) at a flip angle of 0°. Thus, the measured value of the deceleration represents a value that depends on the flip angle. The measured value thus corresponds to a measured value of the tilt angle.

In a development of the second device, the paramagnetic center comprises an NV center or an ST1 center or a TR12 center or a SiV center or a GeV center.

In a further development of the two devices described above, the paramagnetic center comprises one or more NV centers in diamond and/or one or more ST1 centers in diamond and/or one or more TR12 centers in diamond and/or one or more SiV Centers in diamond and/or one or more GeV centers in diamond and/or one or more coupled NV center pairs in diamond and/or one or more coupled SiV center pairs in diamond and/or one or more coupled GeV -center pairs in diamond and/or one or more coupled pairs of ST1 centers and/or one or more coupled pairs of TR12 centers and/or one or more coupled pairs of paramagnetic centers. In general, the technical teaching of the document presented here assumes that the paramagnetic center is one or more NV centers in diamond and/or one or more ST1 centers in diamond and/or one or more TR12 centers in diamond and/or one or multiple SiV centers in diamond and/or one or more GeV centers in diamond and/or one or more coupled pairs of NV centers in diamond and/or one or more coupled pairs of SiV centers in diamond and/or one or more multiple GeV coupled center pairs in diamond and/or one or more ST1 coupled center pairs and/or one or more TR12 coupled center pairs and/or one or more pairs of coupled paramagnetic centers.

A device for detecting a tilt angle with an HD-NV diamond and with a magnetic field source and with a pump radiation source and with a photodetector and with an evaluation unit, which can in particular comprise an amplifier and/or a lock-in amplifier, corresponds to these proposals. The pump radiation source irradiates the HD-NV diamond with pump radiation. The HD NV Diamond emits fluorescence radiation. The photodetector records the intensity of the fluorescence radiation of the HD-NV diamond and forms a reception signal depending on the intensity of the fluorescence radiation. The evaluation unit forms a measured value for the intensity of the fluorescence radiation of the HD-NV diamond, it being possible for the measured value to be a parameter value of an output signal from the evaluation unit. The magnetic field source generates a magnetic field that can be mechanically or electrically tilted by the tilt angle relative to the diamond. The magnetic field source generates a magnetic field with a magnetic flux density B at a tilt angle of 0° at the location of the HD-NV diamond, which corresponds to a magnetic flux density B, which leads to a drop in intensity of the intensity of the fluorescence radiation within a fluorescence feature. Thus, the change in the tilt angle deviating from a tilt angle of 0° leads to an increase in the intensity of the fluorescence radiation compared to the intensity of the fluorescence radiation at a tilt angle of 0°. The measured value thus represents a value that depends on the tilt angle.

As before, it is now possible to provide an analog device for detecting a flip angle using the delay time. Such a device preferably also comprises an HD-NV diamond, a magnetic field source, a pump radiation source, a photodetector and an evaluation unit. In particular, the evaluation unit can comprise an amplifier and/or a lock-in amplifier. The pump radiation source irradiates the HD-NV diamond with pump radiation. The intensity of the pump radiation, ie its radiation energy level, is then temporally modulated with a modulation. For example, it can be a pulse modulation, in particular a pulse width modulation or a pulse density modulation or a pulse frequency modulation or a pulse width modulation etc. By this irradiation, the HD-NV diamond emits fluorescent radiation. An optical filter preferably separates the fluorescence radiation from the pump radiation. (This applies to the entire document) The photodetector detects the intensity of the fluorescence radiation of the HD-NV diamond and, depending on the intensity of the fluorescence radiation, forms a received signal with a time profile of the intensity value of the detected intensity of the fluorescence radiation of the HD-NV diamond as time course of values of this received signal. The evaluation unit forms a measured value for the time delay of the time profile of the intensity value of the fluorescence radiation (FL) of the HD-NV diamond compared to the time profile of the modulation of the pump radiation (LB). The measured value can be a parameter value of an output signal from the evaluation unit. The magnetic field source generates a magnetic field that can be mechanically or electrically tilted by the tilt angle relative to the diamond. The magnetic field source generates a magnetic field with a magnetic flux density B at the location of the HD-NV diamond at a tilt angle of 0°, which corresponds to a magnetic flux density B that leads to an increase in the measured value of the time delay of the fluorescence radiation (FL) within a fluorescence feature . Changing the tilt angle to a tilt angle deviating from a tilt angle of 0° leads to a decrease in the measured value of the time delay in the intensity curve of the fluorescence radiation compared to the measured value of the delay in the intensity curve of the fluorescence radiation at a tilt angle of 0°. This measured value then also represents a value that depends on the tilt angle.

Group III: Calibration procedure

The elaboration of the proposal presented here revealed that after the alignment of the crystal, in particular the diamond crystal, which is preferably a HD-NV diamond, the proposed device can carry out a calibration method. The basic idea is to use the fluorescence features that appear in the intensity curve of the fluorescence radiation (LB) as a function of the magnetic flux density (B) for the calibration.

Group IIIa: General calibration procedures

The document presented here thus proposes a method for calibrating a magnetic flux density B of a magnetic field source (MGx, MGy, MGz), which uses the above-mentioned principles and the presence of the fluorescence features in the intensity curve of the intensity of the fluorescence radiation (FL) as a function of the magnetic Flux density B can use.

• • Bereitstellen eines Diamanten (HDNV);
• • Bereitstellen der Magnetfeldquelle (MGx, MGy, MGz),
• • Bestrahlen des Diamanten (HDNV) mit Pumpstrahlung (LB), wobei die Pumpstrahlung (LB) in Abhängigkeit von einem Modulationssignal (S5) in ihrer Intensität moduliert sein kann;
• • Erfassen der Intensität der Fluoreszenzstrahlung (FL) des HD-NV-Diamanten;
• • Bilden eines Messwerts für die Intensität der Fluoreszenzstrahlung (FL) des Diamanten und/oder der zeitlichen Verzögerung der Modulation der Intensität der Fluoreszenzstrahlung (FL) des Diamanten (HDNV) gegenüber der Modulation der Pumpstrahlung (LB) bei einem Magnetfeld mit einer Flussdichte;
• • Änderung der Magnetfeldquellenparameter zur Änderung der Stärke der magnetischen Flussdichte (B), die den Diamanten (HDNV) durchströmt und die von der Magnetfeldquelle (MGx, MGy, MGz) stammt;
• • Erfassung einer Mehrzahl von Fluoreszenzintensitätswerten bei einer Mehrzahl korrespondierender, verschiedener Magnetfeldquellenparameter;
• • Identifikation der Fluoreszenzmerkmale in der Mehrzahl von Fluoreszenzintensitätswerten und Identifikation der Magnetfeldquellenparameter als Magnetfeldquellenparameter, die zu den Fluoreszenzintensitätswerten der Fluoreszenzmerkmale korrespondieren;
• • Bestimmung von Korrekturfaktoren einer mathematischen Funktion zur mathematischen Abbildung eines gewünschten Werts einer magnetischen Flussdichte B auf einen Magnetfeldquellenparameter der Magnetfeldquelle;
• • Ablegen der Korrekturfaktoren in einem Speicher (NVM).

The document presented here therefore proposes a general method for calibrating a magnetic flux density (B) of a magnetic field source (MGx, MGy, MGz). The method proposed below makes use of the fact that the intensity of the intensity of the fluorescence radiation (FL) of the diamond (HDNV) and/or the time delay of the modulation of the intensity of the fluorescence radiation (FL) of the diamond (HDNV) compared to the modulation of the pump radiation (LB ) at magnetic flux densities (B) local extremes of the intensity of the fluorescence radiation (FL) and/or the time delay of the modulation showing the intensity of the fluorescence radiation (FL) of the diamond (HDNV) versus the modulation of the pump radiation (LB) as fluorescence features. The procedure includes the steps:

• • Providing a diamond (HDNV);
• • Providing the magnetic field source (MGx, MGy, MGz),
• • Irradiating the diamond (HDNV) with pump radiation (LB), the pump radiation (LB) being able to be modulated in terms of its intensity as a function of a modulation signal (S5);
• • detecting the intensity of the fluorescence radiation (FL) of the HD-NV diamond;
• • forming a measurement of the diamond fluorescence (FL) intensity and/or the time delay of the modulation of the diamond fluorescence (FL) intensity (HDNV) versus the modulation of the pump radiation (LB) in a magnetic field with a flux density;
• • Changing the magnetic field source parameters to change the strength of the magnetic flux density (B) flowing through the diamond (HDNV) coming from the magnetic field source (MGx, MGy, MGz);
• • acquiring a plurality of fluorescence intensity values at a plurality of corresponding different magnetic field source parameters;
• • identifying the fluorescence features in the plurality of fluorescence intensity values and identifying the magnetic field source parameters as magnetic field source parameters that correspond to the fluorescence intensity values of the fluorescence features;
• • determination of correction factors of a mathematical function for the mathematical mapping of a desired value of a magnetic flux density B onto a magnetic field source parameter of the magnetic field source;
• • Storage of the correction factors in a memory (NVM).

The control device (STV) can preferably control the magnetic field source (MGx, MGy, MGz) by means of magnetic field source parameters. The magnetic excitation H of the magnetic field source (MGx, MGy, MGz) typically depends on these magnetic field source parameters.

The mathematical function for the mathematical mapping can be a polynomial. The correction factors can then be the coefficients of this polynomial, for example. The control device (STV) preferably calculates this mathematical function. The control device (STV) preferably determines the correction factors.

A development of the method relates to the application of the correction factors determined in this way.

• • Bereitstellen einer der Magnetfeldquelle (B);
• • Bestimmung der Korrekturfaktoren mittels des unmittelbar zuvor beschriebenen Verfahrens;
• • Vorgeben des Werts einer magnetischen Flussdichte (B);
• • Ermitteln der Magnetfeldquellenparameter der Magnetfeldquelle entsprechend diesem vorgegebenen Wert der magnetischen Flussdichte (B) unter Benutzung der mathematischen Funktion zur mathematischen Abbildung eines gewünschten Werts einer magnetischen Flussdichte (B) auf einen Magnetfeldquellenparameter der Magnetfeldquelle und unter Benutzung der bestimmten Korrekturfaktoren;
• • Einstellen der so ermittelten Magnetfeldquellenparameter der Magnetfeldquelle (MGx, MGy, MGz).

The exemplary application method now proposed is a method for setting a calibrated magnetic flux density (B). The procedure includes the steps:

• • Providing one of the magnetic field source (B);
• • Determination of the correction factors using the method described immediately above;
• • specifying the value of a magnetic flux density (B);
• • determining magnetic field source parameters of the magnetic field source corresponding to said predetermined value of magnetic flux density (B) using the mathematical function for mathematically mapping a desired value of magnetic flux density (B) to a magnetic field source parameter of the magnetic field source and using the determined correction factors;
• • Setting the magnetic field source parameters of the magnetic field source determined in this way (MGx, MGy, MGz).

Said control device (STV) can include, for example, one or more computer systems (CPU) and/or logic circuits and/or memories (NVM, RAM). The control device (STV) preferably carries out the two methods described above. The control device (STV) preferably controls one of the two above methods or both above methods and/or carries them out.

The diamond is preferably HD-NV diamond with a high density of NV centers. At least the diamond contains one or more paramagnetic centers. The paramagnetic centers are very particularly preferably NV centers. Other possibilities of paramagnetic centers in this connection are, for example, SiV centers and GeV centers and ST1 centers and TR12 centers. These are also preferably present in a high density. The diamond therefore preferably has a high density of paramagnetic centers. The diamond therefore preferably also has one or more pairs of coupled paramagnetic centers. It is preferably one or more coupled pairs of NV centers. Other examples of possible pairs of coupled paramagnetic centers are coupled SiV center pairs and/or coupled GeV center pairs and/or ST1 center pairs and/or TR12 center pairs. However, the paper presented here expressly considers pairs of different centers, if they are coupled, to be pairs of coupled paramagnetic centers in the sense of the paper presented here.

The paper presented here refers here to the list of fluorescence characteristics of an HD-NV diamond in the Glossary section at the end of this text. There is a list of fluorescence features.

The mathematical function for the mathematical mapping of the target value of the magnetic flux density can be a polynomial. The computer core (CPU) of the control device (STV) preferably receives the command, for example via an external data bus (EXTDB) and its external data bus interface (DBIF) to the external data bus (EXTDB), from a higher-level system or an operator to set a specific, transmitted setpoint. The computer core (CPU) then takes the stored correction values from its non-volatile memory (NVM) or its read/write memory (RAM). The computer core (CPU) then executes the program stored in its program code in its program memory (NVM, RAM) for calculating the mathematical function for mathematically mapping the target value of the magnetic flux density B to the magnetic field source parameters of the magnetic field source (MGx, MGy, MGz). The computer core (CPU) uses the specific, transmitted target value and the previously determined correction values taken from the memory as parameters of the program for calculating the mathematical function for the mathematical mapping of the target value of the magnetic flux density B to the magnetic field source parameters of the magnetic field source (MGx, MGy, MGz). In this way, the computer core (CPU) determines the magnetic field source parameters of the magnetic field source (MGx, MGy, MGz) that correspond to the desired value. The computer core (CPU) then transmits the magnetic field source parameters determined in this way to the magnetic field source (MGx, MGy, MGz). The computer core (CPU) controls the magnetic field controls (MGSx, MGSy, MGSz) via the exemplary motor data bus interface (MDBIF) and a device-internal data bus (MDB). The magnetic field controllers (MGSx, MGSy, MGSz) then energize the magnetic field generator coils (MGx, MGy, MGz) assigned to them in such a way that this energization corresponds to the corresponding magnetic field source parameters. This then sets the magnetic field with a magnetic flux density B corresponding to the desired magnetic flux density. If necessary, the device can use other magnetic field sensors (MSx, MSy, MSz) to monitor the magnetic field. The computer core (CPU) of the device preferably also calibrates the measured values of these sensors (MSx, MSy, MSz) with the aid of sensor correction factors.

The device therefore preferably comprises one or more conventional magnetic field sensors (MSx, MSy, MSz), for example Hall sensors and/or AMR sensors or GMR sensors or the like. The computer core (CPU) receives, for example, the measured values of the sensors (MSx, MSy, MSz) via the exemplary motor data bus interface (MDBIF) and the exemplary device-internal data bus (MDB). The computer core (CPU) maps the measured sensor values (MSx, MSy, MSz) from the sensors to corrected sensor measured values by means of a mathematical sensor correction function, which is preferably a further correction polynomial. The computer core (CPU) uses sensor reading correction parameters for this. If a further correction polynomial is used as the sensor correction function, these sensor measured value correction parameters can be the coefficients of the further correction polynomial. Using this mathematical sensor correction function, the computer core then maps the sensor measurement values of the sensors to more precise measurement values using the said sensor correction function.

To determine the sensor reading correction parameters, the computer core (CPU) of the device or an auxiliary device uses the magnetic field generators (MGx, MGy, MGz) to set a magnetic flux density B corresponding to a fluorescence feature. By evaluating the intensity of the fluorescence radiation (FL) and/or the time delay in the modulation of the intensity of the fluorescence radiation (FL) compared to the time modulation of the pump radiation (LB) or a modulation signal (S5), the computer core can readjust the magnetic field generators in such a way that the magnetic flux density then really corresponds to the magnetic flux density B of a fluorescent feature. Represents the computer core (CPU) by means of the magnetic field generators (MGx, MGy, MGz) several fluorescence features in a row and the computer core (CPU) determines the sensor readings of the conventional magnetic field sensors (MSx, MSy, MSz) for the flux densities of these fluorescence features, the device can thereby Determine the coefficients of the further correction polynomial for the high-precision mapping of the sensor measured values to improved sensor measured values for the magnetic flux density. The device preferably stores these sensor coefficients in a memory (NVM, RAM) of the device.

Since the high accuracy of the fluorescence features can only be achieved for magnetic flux densities B close to the magnetic flux density of these fluorescence features, it makes sense to use the method and device described above to improve a conventional sensor, for example a Hall sensor.

Group IIIb: Calibration procedure 34 mT (E _34.0 ) with determination of the correction parameters

• • In einem Abstand von ca. 0,84 mT zueinander befinden sich bei einer höheren magnetischen Flussdichte (B) bezogen auf das 34 mT Minimum (E_34,0) ein oberes erstes lokales Extremum (E_34,1b) in Form eines Maximums des Messwerts der Intensität der Fluoreszenzstrahlung (FL) und bei einer niedrigeren magnetischen Flussdichte (B) bezogen auf das 34mT Minimum (E_34,0) ein unteres erstes lokales Extremum (E_34,1a) in Form eines Maximums des Messwerts der Intensität der Fluoreszenzstrahlung (FL).
• • In einem Abstand von ca. 2,01mT zueinander befinden sich bei einer höheren magnetischen Flussdichte (B) bezogen auf das 34mT Minimum (E_34,0) ein oberes zweites lokales Extremum (E_34,2b) in Form eines Minimums des Messwerts der Intensität der Fluoreszenzstrahlung (FL) und bei einer niedrigeren magnetischen Flussdichte (B) bezogen auf das 34mT Minimum (E_34,0) ein unteres zweites lokales Extremum (E_34,2a) in Form eines Minimums des Messwerts der Intensität der Fluoreszenzstrahlung (FL).
• • In einem Abstand von ca. 2,70mT zueinander befinden sich bei einer höheren magnetischen Flussdichte (B) bezogen auf das 34mT Minimum (E_34,0) ein oberes drittes lokales Extremum (E_34,3b) in Form eines Maximums des Messwerts der Intensität der Fluoreszenzstrahlung (FL) und bei einer niedrigeren magnetischen Flussdichte (B) bezogen auf das 34mT Minimum (E_34,0) ein drittes unteres lokales Extremum (E_34,3a) in Form eines Maximums des Messwerts der Intensität der Fluoreszenzstrahlung (FL).

The 34 mT extremum (E _34.0 ) mentioned below, which is a minimum, is characterized by the following sub-characteristics:

• • At a distance of approx. 0.84 mT from each other and with a higher magnetic flux density (B) in relation to the 34 mT minimum (E _34.0 ), there is an upper first local extremum (E _34.1b ) in the form of a maximum of the Measured value of the intensity of the fluorescence radiation (FL) and at a lower magnetic flux density (B) related to the 34mT minimum (E _34.0 ) a lower first local extremum (E _34.1a ) in the form of a maximum of the measured value of the intensity of the fluorescence radiation ( FL).
• • At a distance of approx. 2.01mT from each other and with a higher magnetic flux density (B) in relation to the 34mT minimum (E _34.0 ), there is an upper second local extreme (E _34.2b ) in the form of a minimum of the measured value of the Intensity of the fluorescence radiation (FL) and at a lower magnetic flux density (B) related to the 34mT minimum (E _34.0 ) a lower second local extremum (E _34.2a ) in the form of a minimum of the measured value of the intensity of the fluorescence radiation (FL) .
• • At a distance of approx. 2.70mT from each other and with a higher magnetic flux density (B) in relation to the 34mT minimum (E _34.0 ), there is an upper third local extremum (E _34.3b ) in the form of a maximum of the measured value of the Intensity of the fluorescence radiation (FL) and at a lower magnetic flux density (B) related to the 34mT minimum (E _34.0 ) a third lower local extremum (E _34.3a ) in the form of a maximum of the measured value of the intensity of the fluorescence radiation (FL) .

The document presented here refers to these seven minima and maxima as 34mT extremes.

• • Bereitstellen eines Diamanten (HDNV), der bevorzugt ein HD-NV-Diamanten (HDNV) ist;
• • Bereitstellen einer Magnetfeldquelle (MGx, MGy, MGz);
• • Bestrahlen des Diamanten (HDNV) mit Pumpstrahlung (LB) mit einer Pumpstrahlungswellenlänge (λ_pmp);
• • Erfassen der Intensität der Fluoreszenzstrahlung (FL) des Diamanten (HDNV);
• • Bilden eines Messwerts für die Intensität der Fluoreszenzstrahlung (FL) des Diamanten;
• • Änderung der Magnetfeldquellenparameter zur Änderung der Stärke der magnetischen Flussdichte (B), die den Diamanten (HDNV) durchströmt und die von der Magnetfeldquelle (MGx, MGy, MGz) stammt in der Art, dass die magnetische Flussdichte sich im 34mT Minimum der Intensität der Fluoreszenz befindet.
• • Das 34 mT Minimum zeichnet sich dadurch folgende Merkmale aus:
  • ◯ In einem Abstand von ca. 0,84mT zueinander befinden sich bei einer höheren magnetischen Flussdichte (B) bezogen auf das 34mT Minimum (E_34,0) ein oberes erstes lokales Extremum (E_34,1b) in Form eines Maximums und bei einer niedrigeren magnetischen Flussdichte (B) bezogen auf das 34mT Minimum (E_34,0) ein unteres erstes lokales Extremum (E_34,1a) in Form eines Maximums.
  • ◯ In einem Abstand von ca. 2,01mT zueinander befinden sich bei einer höheren magnetischen Flussdichte (B) bezogen auf das 34mT Minimum (E_34,0) ein oberes zweites lokales Extremum (E_34,2b) in Form eines Minimums und bei einer niedrigeren magnetischen Flussdichte (B) bezogen auf das 34mT Minimum (E_34,0) ein unteres erstes lokales Extremum (E_34,2a) in Form eines Minimums.
  • ◯ In einem Abstand von ca. 2,70mT zueinander befinden sich bei einer höheren magnetischen Flussdichte (B) bezogen auf das 34mT Minimum (E_34,0) ein oberes drittes lokales Extremum (E_34,3b) in Form eines Maximums und bei einer niedrigeren magnetischen Flussdichte (B) bezogen auf das 34mT Minimum (E_34,0) ein unteres drittes lokales Extremum (E_34,3a) in Form eines Maximums.

The effects of the fluorescence characteristics can also be used for a method for calibrating a magnetic flux density B. The procedure includes the steps:

• • providing a diamond (HDNV), which is preferably a HD-NV diamond (HDNV);
• • Providing a magnetic field source (MGx, MGy, MGz);
• • irradiating the diamond (HDNV) with pump radiation (LB) with a pump radiation wavelength (λ _pmp );
• • detecting the intensity of the fluorescence radiation (FL) of the diamond (HDNV);
• • taking a reading for the intensity of the fluorescence radiation (FL) of the diamond;
• • Changing the parameters of the magnetic field source to change the strength of the magnetic flux density (B) flowing through the diamond (HDNV) and coming from the magnetic field source (MGx, MGy, MGz) in such a way that the magnetic flux density is at the 34mT minimum of the intensity of the Fluorescence is located.
• • The 34 mT minimum is characterized by the following features:
  • ◯ At a distance of approx. 0.84mT from each other there is an upper first local extremum (E _34.1b ) in the form of a maximum and at a higher magnetic flux density (B) in relation to the 34mT minimum (E _34.0 ). lower magnetic flux density (B) related to the 34mT minimum (E _34.0 ) a lower first local extremum (E _34.1a ) in the form of a maximum.
  • ◯ At a distance of approx. 2.01mT from each other and with a higher magnetic flux density (B) in relation to the 34mT minimum (E _34.0 ), there is an upper second local extremum (E _34.2b ) in Form of a minimum and at a lower magnetic flux density (B) related to the 34mT minimum (E _34.0 ) a lower first local extremum (E _34.2a ) in the form of a minimum.
  • ◯ At a distance of approx. 2.70mT from each other, with a higher magnetic flux density (B) in relation to the 34mT minimum (E _34.0 ), there is an upper third local extremum (E _34.3b ) in the form of a maximum and a lower magnetic flux density (B) related to the 34mT minimum (E _34.0 ) a lower third local extreme (E _34.3a ) in the form of a maximum.

• • Bereitstellen eines Diamanten, der bevorzugt ein HD-NV-Diamanten (HDNV) ist;
• • Bereitstellen der Magnetfeldquelle (MGx, MGy, MGz),
• • Bestrahlen des HD-NV-Diamanten (HDNV) mit Pumpstrahlung (LB);
• • Erfassen der Intensität der Fluoreszenzstrahlung (FL) des Diamanten (HDNV);
• • Bilden eines Messwerts für die Intensität der Fluoreszenzstrahlung (FL) des HD-NV-Diamanten;
• • Änderung der Magnetfeldquellenparameter zur Änderung der Stärke der magnetischen Flussdichte (B), die den Diamanten (HDNV) durchströmt und die von der Magnetfeldquelle (MGx, MGy, MGz) stammt;
• • Erfassung einer Mehrzahl von Fluoreszenzintensitätswerten bei einer Mehrzahl korrespondierender, verschiedener Magnetfeldquellenparameter;
• • Identifikation von mindestens zwei Fluoreszenzmerkmalen, insbesondere der der 0,0 mT Extrema und/oder der 9,5 mT Extrema und/oder der 34 mT Extrema und/oder der 51,0 mT Extrema und/oder der 102,4 mT Extrema, in der Mehrzahl von Fluoreszenzintensitätswerten und Identifikation der Magnetfeldquellenparameter als diesen Fluoreszenzmerkmalen zugeordnete Magnetfeldquellenparameter, die zu den Fluoreszenzintensitätswerten der Extrema dieser Fluoreszenzmerkmale korrespondieren;
• • Bestimmung von Korrekturfaktoren einer mathematischen Funktion zur mathematischen Abbildung eines gewünschten Werts einer magnetischen Flussdichte B auf einen Magnetfeldquellenparameter der Magnetfeldquelle (MGx, MGy, MGz),
• • Ablegen der Korrekturfaktoren in einem Speicher (NVM).

According to the proposal, the proposed calibration method again comprises at least the following steps:

• • providing a diamond, which is preferably a HD-NV diamond (HDNV);
• • Providing the magnetic field source (MGx, MGy, MGz),
• • irradiating the HD-NV diamond (HDNV) with pump radiation (LB);
• • detecting the intensity of the fluorescence radiation (FL) of the diamond (HDNV);
• • forming a fluorescence radiation (FL) intensity reading of the HD-NV diamond;
• • Changing the magnetic field source parameters to change the strength of the magnetic flux density (B) flowing through the diamond (HDNV) coming from the magnetic field source (MGx, MGy, MGz);
• • acquiring a plurality of fluorescence intensity values at a plurality of corresponding different magnetic field source parameters;
• • Identification of at least two fluorescence features, in particular the 0.0 mT extrema and/or the 9.5 mT extrema and/or the 34 mT extrema and/or the 51.0 mT extrema and/or the 102.4 mT extrema, in the plurality of fluorescence intensity values and identifying the magnetic field source parameters as magnetic field source parameters associated with those fluorescence features that correspond to the fluorescence intensity values of the extrema of those fluorescence features;
• • Determination of correction factors of a mathematical function for the mathematical mapping of a desired value of a magnetic flux density B onto a magnetic field source parameter of the magnetic field source (MGx, MGy, MGz),
• • Storage of the correction factors in a memory (NVM).

For example, the computer core (CPU) can preferably control the magnetic field source (MGx, MGy, MGz) by means of magnetic field source parameters. The magnetic excitation H of the magnetic field source (MGx, MGy, MGz) preferably depends on these magnetic field source parameters. The magnetic flux density B at the location of the paramagnetic centers or at the location of the diamond then also depends preferably on these magnetic field source parameters.

• • In einem Abstand von ca. 0,84mT zueinander befinden sich bei einer höheren magnetischen Flussdichte (B) bezogen auf das 34mT Minimum (E_34,0) ein oberes erstes lokales Extremum (E_34,1b) in Form eines Maximums und bei einer niedrigeren magnetischen Flussdichte (B) bezogen auf das 34mT Minimum (E_34,0) ein unteres erstes lokales Extremum (E_34,1a) in Form eines Maximums.
• • In einem Abstand von ca. 2,01mT zueinander befinden sich bei einer höheren magnetischen Flussdichte (B) bezogen auf das 34mT Minimum (E_34,0) ein oberes zweites lokales Extremum (E_34,2b) in Form eines Minimums und bei einer niedrigeren magnetischen Flussdichte (B) bezogen auf das 34mT Minimum (E_34,0) ein unteres zweites lokales Extremum (E_34,2a) in Form eines Minimums.
• • In einem Abstand von ca. 2,70mT zueinander befinden sich bei einer höheren magnetischen Flussdichte (B) bezogen auf das 34mT Minimum (E_34,0) ein oberes drittes lokales Extremum (E_34,3b) in Form eines Maximums und bei einer niedrigeren magnetischen Flussdichte (B) bezogen auf das 34mT Minimum (E_34,0) ein drittes unteres lokales Extremum (E_34,3a) in Form eines Maximums.

The intensity of the fluorescence radiation (FL) of the diamond (HDNV) shows a local minimum (E _34.0 ) of the intensity of the fluorescence radiation (FL) at approx. 34 mT. This is a first key feature of fluorescence. The main fluorescence feature of this 34 mT minimum (E _34.0 ) is characterized as follows:

• • At a distance of approx. 0.84mT from each other and with a higher magnetic flux density (B) in relation to the 34mT minimum (E _34.0 ) there is an upper first local extremum (E _34.1b ) in the form of a maximum and a lower magnetic flux density (B) related to the 34mT minimum (E _34.0 ) a lower first local extremum (E _34.1a ) in the form of a maximum.
• • At a distance of approx. 2.01mT from each other and with a higher magnetic flux density (B) in relation to the 34mT minimum (E _34.0 ), there is an upper second local extremum (E _34.2b ) in the form of a minimum and a lower magnetic flux density (B) related to the 34mT minimum (E _34.0 ) a lower second local extremum (E _34.2a ) in the form of a minimum.
• • At a distance of approx. 2.70mT from each other and with a higher magnetic flux density (B) in relation to the 34mT minimum (E _34.0 ), there is an upper third local extremum (E _34.3b ) in the form of a maximum and a lower magnetic flux density (B) related to the 34mT minimum (E _34.0 ) a third lower local extremum (E _34.3a ) in the form of a maximum.

The document presented here continues to refer to these seven minima and maxima as 34 mT extrema.

• • Bereitstellen einer der Magnetfeldquelle (B);
• • Bestimmung der Korrekturfaktoren mittels des oben beschriebenen Verfahrens;
• • Vorgeben des Werts einer magnetischen Flussdichte (B);
• • Ermitteln der Magnetfeldquellenparameter der Magnetfeldquelle entsprechend diesem vorgegebenen Wert der magnetischen Flussdichte (B) unter Benutzung der mathematischen Funktion zur mathematischen Abbildung eines gewünschten Werts einer magnetischen Flussdichte (B) auf einen Magnetfeldquellenparameter der Magnetfeldquelle und unter Benutzung der bestimmten Korrekturfaktoren;
• • Einstellen der so ermittelten Magnetfeldquellenparameter der Magnetfeldquelle (MGx, MGy, MGz).

A method for setting a calibrated, magnetic flux density (B) results from the above method and the previously described method. For example, the procedure includes the following steps:

• • Providing one of the magnetic field source (B);
• • Determination of the correction factors using the procedure described above;
• • specifying the value of a magnetic flux density (B);
• • determining magnetic field source parameters of the magnetic field source corresponding to said predetermined value of magnetic flux density (B) using the mathematical function for mathematically mapping a desired value of magnetic flux density (B) to a magnetic field source parameter of the magnetic field source and using the determined correction factors;
• • Setting the magnetic field source parameters of the magnetic field source determined in this way (MGx, MGy, MGz).

In this way, a proposed device can adjust a magnetic field strength very precisely.

A development of the method uses a control device (STV), which can include one or more computer systems (CPU) and/or logic circuits and/or memories (NVM, RAM). The control device (STV) is preferably microintegrated. It is preferably located on and in a single semiconductor crystal. This control device (STV) then preferably controls the previously described method for determining the correction factors and, if necessary, also carries out the method. Furthermore, the control device preferably controls the method described above for determining the magnetic field source parameters of the magnetic field source (MGx, MGy, MGz).

It applies to the entire document presented here that the variation of the flux density B can take place in time multiplex, ie by setting the magnetic flux density B in succession over time, or in space multiplex at different locations. The measurement of the magnetic flux density B is preferably carried out in the case of spatial multiplexing with a plurality of HD-NV diamonds or by means of a plurality of different and spatially separated HD-NV diamond regions, preferably on a diamond substrate. Since the evaluation devices and the pump devices (pump radiation source, etc.) then have to be multiplied, this is generally unfavorable from an economic point of view.

• • Bereitstellen eines HD-NV-Diamanten (HDNV);
• • Bereitstellen einer Magnetfeldquelle (MGx, MGy, MGz);
• • Bestrahlen des HD-NV-Diamanten (HDNV) mit Pumpstrahlung (LB);
• • Erfassen der Intensität der Fluoreszenzstrahlung (FL) des HD-NV-Diamanten (HDNV);
• • Bilden eines Messwerts für die Intensität der Fluoreszenzstrahlung (FL) des HD-NV-Diamanten (HDNV);
• • Änderung der Stärke der magnetischen Flussdichte (B), die den HD-NV-Diamanten (HDNV) durchströmt, in der Art, dass die magnetische Flussdichte (B) sich im 34mT Minimum (E_34,0) des Messwerts der Intensität der Fluoreszenzstrahlung (FL) befindet.

Such a method for calibrating a magnetic flux density (B) requires the systematic testing of different magnetic field settings. Such a method preferably comprises the following steps:

• • Provide a HD NV Diamond (HDNV);
• • Providing a magnetic field source (MGx, MGy, MGz);
• • irradiating the HD-NV diamond (HDNV) with pump radiation (LB);
• • detecting the intensity of the fluorescence radiation (FL) of the HD-NV diamond (HDNV);
• • forming a fluorescence radiation (FL) intensity reading of the HD-NV diamond (HDNV);
• • Changing the strength of the magnetic flux density (B) flowing through the HDNV diamond (HDNV) in such a way that the magnetic flux density (B) is at the 34mT minimum (E _34.0 ) of the measured value of the intensity of the fluorescence radiation (FL) is located.

• • In einem Abstand von ca. 0,84 mT zueinander befinden sich bei einer höheren magnetischen Flussdichte (B) bezogen auf das 34mT Minimum (E_34,0) ein oberes erstes lokales Extremum (E_34,1b) in Form eines Maximums und bei einer niedrigeren magnetischen Flussdichte (B) bezogen auf das 34 mT Minimum (E_34,0) ein unteres erstes lokales Extremum (E_34,1a) in Form eines Maximums.
• • In einem Abstand von ca. 2,01 mT zueinander befinden sich bei einer höheren magnetischen Flussdichte (B) bezogen auf das 34 mT Minimum (E_34,0) ein oberes zweites lokales Extremum (E_34,2b) in Form eines Minimums und bei einer niedrigeren magnetischen Flussdichte (B) bezogen auf das 34 mT Minimum (E_34,0) ein unteres erstes lokales Extremum (E_34,2a) in Form eines Minimums.
• • In einem Abstand von ca. 2,70mT zueinander befinden sich bei einer höheren magnetischen Flussdichte (B) bezogen auf das 34 mT Minimum (E_34,0) sich ein oberes drittes lokales Extremum (E_34,3b) in Form eines Maximums und bei einer niedrigeren magnetischen Flussdichte (B) bezogen auf das 34 mT Minimum (E_34,0) ein unteres drittes lokales Extremum (E_34,3a) in Form eines Maximums.

The 34 mT minimum (E _34.0 ) as a fluorescence feature is characterized by the following features, as already described above:

• • At a distance of approx. 0.84 mT from each other and with a higher magnetic flux density (B) in relation to the 34mT minimum (E _34.0 ) there is an upper first local extremum (E _34.1b ) in the form of a maximum and at a lower magnetic flux density (B) in relation to the 34 mT minimum (E _34.0 ) a lower first local extremum (E _34.1a ) in the form of a maximum.
• • At a distance of approx. 2.01 mT from each other and with a higher magnetic flux density (B) in relation to the 34 mT minimum (E _34.0 ), there is an upper second local extremum (E _34.2b ) in Form of a minimum and at a lower magnetic flux density (B) related to the 34 mT minimum (E _34.0 ) a lower first local extremum (E _34.2a ) in the form of a minimum.
• • At a distance of approx. 2.70mT from each other and with a higher magnetic flux density (B) in relation to the 34 mT minimum (E _34.0 ), there is an upper third local extreme (E _34.3b ) in the form of a maximum and at a lower magnetic flux density (B) in relation to the 34 mT minimum (E _34.0 ) a lower third local extremum (E _34.3a ) in the form of a maximum.

• • Voraussagen eines wahrscheinlichen Bereichs für die Magnetfeldquellenparameter der Magnetfeldquelle (MGx, MGy, MGz), in dem diese Magnetfeldquellenparameter der Magnetfeldquelle (MGx, MGy, MGz) sich befinden müssen, um die magnetischen Flussdichte (B) auf den Wert des 34mT Extremums (E_34,0) einzustellen;
• • Einstellen der Magnetfeldquelle (MGx, MGy, MGz) entsprechend dieser Magnetfeldquellenparameter;
• • Variieren der Magnetfeldquellenparameter der Magnetfeldquelle (MGx, MGy, MGz) unter Erfassen der Fluoreszenzstrahlung (FL) und Einstellen des lokalen Minimums.

A further development of the method improves the starting point of the method and the settling time of the search. The advanced procedure includes the following steps:

• • Predicting a probable range for the magnetic field source parameters of the magnetic field source (MGx, MGy, MGz), in which these magnetic field source parameters of the magnetic field source (MGx, MGy, MGz) must be located in order to reduce the magnetic flux density (B) to the value of the 34mT extremum (E _34.0 );
• • Adjusting the magnetic field source (MGx, MGy, MGz) according to these magnetic field source parameters;
• • Varying the magnetic field source parameters of the magnetic field source (MGx, MGy, MGz) while detecting the fluorescence radiation (FL) and adjusting the local minimum.

In this way, the device that carries out the method systematically searches the possible combinations and finds the optimal values.

If the device has found a local minimum of the fluorescence intensity during the search, the device uses a further development to check whether it is the 34 mT minimum (E _34.0 ). For this purpose, the device tries to find the other fluorescence features in the fluorescence characteristic at the expected points by changing the magnetic flux density (B). The device compares the flux densities of the intensity minima with the expected values and deduces the main fluorescence feature (E _34.0 ). If it turns out that the fluorescence feature found is not the 34 mT minimum (E _34.0 ) of the intensity of the fluorescence radiation (FL), the device repeats the previous steps when carrying out the method and thus continues the search with other flux densities (B) away.

Group IIIc: Calibration procedure 9.5 mT (E _9.5.0 )

The document presented here now specifies a method for calibrating a magnetic flux density (B) on the basis of the main fluorescence feature (E _9.5.0 ) in a similar way.

• • In einem Abstand von ca. 1,23mT zueinander befinden sich bei einer höheren magnetischen Flussdichte (B) bezogen auf das 9,5mT Minimum (E_9.5,0) ein oberes erstes lokales Extremum (E_9.5,1b) in Form eines Maximums und bei einer niedrigeren magnetischen Flussdichte (B) bezogen auf das 9,5mT Minimum (E_9.5,0) ein unteres erstes lokales Extremum (E_9.5,1a) in Form eines Maximums.
• • In einem Abstand von ca. 2,12mT zueinander befinden sich bei einer höheren magnetischen Flussdichte (B) bezogen auf das 9,5mT Minimum (E_9.5,0) ein oberes zweites lokales Extremum (E_9.5,2b) in Form eines Minimums und bei einer niedrigeren magnetischen Flussdichte (B) bezogen auf das 9,5mT Minimum (E_9.5,0) ein unteres erstes lokales Extremum (E_9.5,2a) in Form eines Minimums.
• • In einem Abstand von ca. 2,98mT zueinander befinden sich bei einer höheren magnetischen Flussdichte (B) bezogen auf das 9,5mT Minimum (E_9.5,0) ein oberes drittes lokales Extremum (E_9.5,3b) in Form eines Maximums und bei einer niedrigeren magnetischen Flussdichte (B) bezogen auf das 9,5mT Minimum (E_9.5,0) ein unteres drittes lokales Extremum (E_9.5,3a) in Form eines Maximums.

The 9.5 mT minimum (E _9.5.0 ) is characterized as the main fluorescence feature by the following features:

• • At a distance of approx. 1.23mT from each other and with a higher magnetic flux density (B) in relation to the 9.5mT minimum (E _9.5.0 ) there is an upper first local extremum (E _9.5.1b ) in the form of a maximum and at a lower magnetic flux density (B) related to the 9.5mT minimum (E _9.5.0 ) a lower first local extremum (E _9.5.1a ) in the form of a maximum.
• • At a distance of approx. 2.12mT from each other and with a higher magnetic flux density (B) in relation to the 9.5mT minimum (E _9.5.0 ) there is an upper second local extremum (E _9.5.2b ) in the form of a minimum and at a lower magnetic flux density (B) related to the 9.5mT minimum (E _9.5.0 ) a lower first local extremum (E _9.5.2a ) in the form of a minimum.
• • At a distance of approx. 2.98mT from each other and with a higher magnetic flux density (B) in relation to the 9.5mT minimum (E _9.5.0 ) there is an upper third local extremum (E _9.5.3b ) in the form of a maximum and at a lower magnetic flux density (B) related to the 9.5mT minimum (E _9.5.0 ) a lower third local extremum (E _9.5.3a ) in the form of a maximum.

• • Bereitstellen eines HD-NV-Diamanten (HDNV);
• • Bereitstellen einer Magnetfeldquelle (MGx, MGy, MGz);
• • Bestrahlen des HD-NV-Diamanten (HDNV) mit Pumpstrahlung (LB);
• • Erfassen der Intensität der Fluoreszenzstrahlung (FL) des HD-NV-Diamanten (HDNV);
• • Bilden eines Messwerts für die Intensität der Fluoreszenzstrahlung (FL) des HD-NV-Diamanten (HDNV);
• • Änderung der Stärke der magnetischen Flussdichte (B), die den HD-NV-Diamanten (HDNV) durchströmt, in der Art, dass die magnetische Flussdichte (B) sich im 9,5mT Minimum (E_9.5,0) des Messwerts der Intensität der Fluoreszenzstrahlung (FL) befindet.

The procedure then comprises the following steps in an analogous manner:

• • Provide a HD NV Diamond (HDNV);
• • Providing a magnetic field source (MGx, MGy, MGz);
• • irradiating the HD-NV diamond (HDNV) with pump radiation (LB);
• • detecting the intensity of the fluorescence radiation (FL) of the HD-NV diamond (HDNV);
• • forming a fluorescence radiation (FL) intensity reading of the HD-NV diamond (HDNV);
• • Changing the strength of the magnetic flux density (B) flowing through the HDNV diamond (HDNV) such that the magnetic flux density (B) is at the 9.5mT minimum (E _9.5.0 ) of the intensity reading of fluorescence radiation (FL).

• • Voraussagen eines wahrscheinlichen Bereichs für die Magnetfeldquellenparameter der Magnetfeldquelle (MGx, MGy, MGz), in dem diese Magnetfeldquellenparameter der Magnetfeldquelle (MGx, MGy, MGz) sich befinden müssen, um die magnetischen Flussdichte (B) auf den Wert des 9,5mT Extremums (E_9.5,0) einzustellen;
• • Einstellen der Magnetfeldquelle (MGx, MGy, MGz) entsprechend dieser Magnetfeldquellenparameter;
• • Variieren der Magnetfeldquellenparameter der Magnetfeldquelle (MGx, MGy, MGz) unter Erfassen der Fluoreszenzstrahlung (FL) und Einstellen des lokalen Minimums.

A further development of the method again improves the starting value for the search for the 9.5mT minimum (E _9.5.0 ). Such an improved method then includes the following additional steps:

• • Predicting a probable range for the magnetic field source parameters of the magnetic field source (MGx, MGy, MGz), in which these magnetic field source parameters of the magnetic field source (MGx, MGy, MGz) must be located in order to reduce the magnetic flux density (B) to the value of the 9.5mT extremum (E _9.5.0 ) set;
• • Adjusting the magnetic field source (MGx, MGy, MGz) according to these magnetic field source parameters;
• • Varying the magnetic field source parameters of the magnetic field source (MGx, MGy, MGz) while detecting the fluorescence radiation (FL) and adjusting the local minimum.

The method then finds the minima and maxima by means of an iterative search, for example by means of iterative change in the energization of magnetic field-generating coils, and can then identify them as the sought-after fluorescence features by comparing them relative to one another.

In general, such an identification of the fluorescence features then enables correction factors to be calculated. This applies to all fluorescence features mentioned in this document. In this way, specific magnetic flux densities B can be assigned to specific current values for energizing the magnetic field-generating coils, which in turn correspond to the magnetic flux densities B of the identified fluorescence features. By means of polynomial approximation, a computer unit (CPU) can then use the correction factors determined in this way to conclude the necessary energization by means of a corresponding calculation if the control device (STV) is to set intermediate values of the magnetic flux density B that do not correspond to any identified magnetic flux density B of a functional feature.

It is therefore also an essential step of the method here that the device that executes the method checks whether an extreme that may have been found is the 9.5 mT minimum (E _9.5.0 ). In order to carry out such a check, the device preferably changes the magnetic flux density and uses the changing intensity of the fluorescence radiation (FL) in the vicinity of the extremum to search for further fluorescence features with a different characteristic magnetic flux density B. The device searches for the corresponding pattern of the arrangement . The device assumes a linear mapping. So the device does not look for the absolute values, but for the relative pattern.

Unless the set minimum is the 9.5mT minimum (E _9.5.0 ), the device performing the method preferentially repeats the steps previously described to continue the search.

• • Bereitstellen eines HD-NV-Diamanten (HDNV);
• • Bereitstellen einer Magnetfeldquelle (MGx, MGy, MGz);
• • Bestrahlen des HD-NV-Diamanten (HDNV) mit Pumpstrahlung (LB), wobei die Pumpstrahlung (LB) mit einem Modulationssignal (S5) moduliert ist;
• • Erfassen der Modulation der Intensität der Fluoreszenzstrahlung (FL) des HD-NV-Diamanten (HDNV);
• • Bilden eines Messwerts für die Verzögerung der Modulation Intensität der Fluoreszenzstrahlung (FL) des HD-NV-Diamanten (HDNV) gegenüber dem Modulationssignal,
• • Änderung der Stärke der magnetischen Flussdichte (B), die den HD-NV-Diamanten (HDNV) durchströmt, in der Art, dass die magnetische Flussdichte (B) sich im 9,5mT Maximum (E_9.5,0) des Messwerts der Verzögerung der Modulation der Intensität der Fluoreszenzstrahlung (FL) befindet.

As before, a method can be specified based on the changing delay. Such a method for calibrating a magnetic flux density (B) then includes the following steps:

• • Provide a HD NV Diamond (HDNV);
• • Providing a magnetic field source (MGx, MGy, MGz);
• • irradiating the HD-NV diamond (HDNV) with pump radiation (LB), the pump radiation (LB) being modulated with a modulation signal (S5);
• • detecting the modulation of the fluorescence radiation (FL) intensity of the HD-NV diamond (HDNV);
• • Forming a measured value for the delay of the modulation intensity of the fluorescence radiation (FL) of the HD-NV diamond (HDNV) compared to the modulation signal,
• • Changing the magnitude of the magnetic flux density (B) flowing through the HDNV diamond (HDNV) such that the magnetic flux density (B) is at the 9.5mT maximum (E _9.5.0 ) of the deceleration reading the modulation of the intensity of the fluorescence radiation (FL).

• • Voraussagen eines wahrscheinlichen Bereichs für die Magnetfeldquellenparameter der Magnetfeldquelle (MGx, MGy, MGz), in dem diese Magnetfeldquellenparameter der Magnetfeldquelle (MGx, MGy, MGz) sich befinden müssen, um die magnetischen Flussdichte (B) auf den Wert des 9,5mT Extremums (E_9.5,0) einzustellen;
• • Einstellen der Magnetfeldquelle (MGx, MGy, MGz) entsprechend dieser Magnetfeldquellenparameter;
• • Variieren der Magnetfeldquellenparameter der Magnetfeldquelle (MGx, MGy, MGz) unter Erfassen der Fluoreszenzstrahlung (FL) und Einstellen des lokalen Minimums.

Here, too, it makes sense if the procedure also includes the following steps:

• • Predicting a probable range for the magnetic field source parameters of the magnetic field source (MGx, MGy, MGz), in which these magnetic field source parameters of the magnetic field source (MGx, MGy, MGz) must be located in order to reduce the magnetic flux density (B) to the value of the 9.5mT extremum (E _9.5.0 ) set;
• • Adjusting the magnetic field source (MGx, MGy, MGz) according to these magnetic field source parameters;
• • Varying the magnetic field source parameters of the magnetic field source (MGx, MGy, MGz) while detecting the fluorescence radiation (FL) and adjusting the local minimum.

The technical teaching presented here therefore refers to the above statements.

As above, a step of checking whether it is the 9.5mT minimum (E _9.5.0 ) is also appropriate in this procedure.

In this method, too, the steps described above are preferably repeated if the set minimum is not the 9.5mT minimum (E _9.5.0 ) in order to continue the search.

The method then finds the minima and maxima by means of an iterative search, for example by means of iterative change in the energization of magnetic field-generating coils, and can then identify them as the sought-after fluorescence features by comparing them relative to one another.

In general, such an identification of the fluorescence features then enables correction factors to be calculated. This applies to all fluorescence features mentioned in this document. In this way, specific magnetic flux densities B can be assigned to specific current values for energizing the magnetic field-generating coils, which in turn correspond to the magnetic flux densities B of the identified fluorescence features. By means of polynomial approximation, a computer unit (CPU) can then use the correction factors determined in this way to conclude the necessary energization by means of a corresponding calculation if the control device (STV) is to set intermediate values of the magnetic flux density B that do not correspond to any identified magnetic flux density B of a functional feature.

It is therefore also an essential step of the method here that the device that executes the method checks whether any extremum found is the 9.5 mT minimum (E _9.5.0 ). In order to carry out such a check, the device preferably changes the magnetic flux density B and uses the changing delay in the modulation of the intensity of the fluorescence radiation (FL) to search for further fluorescence features with a different characteristic magnetic flux density B in the vicinity of the extremum. The device searches for this the corresponding pattern of the arrangement. The device assumes a linear mapping. So the device does not look for the absolute values, but for the relative pattern.

Unless the set minimum is the 9.5 mT minimum (E _9.5.0 ), the device performing the method preferably repeats the steps previously described to continue the search.

Group IIId: Calibration procedure 102.4 mT (E _102.4.0 )

The document presented here now specifies a method for calibrating a magnetic flux density (B) based on the main fluorescence feature (E _102.4.0 ) at 102.4mT in a similar way.

• • In einem Abstand von ca. 1,30mT zueinander befinden sich bei einer höheren magnetischen Flussdichte (B) bezogen auf das 120,4 mT Minimum (E_120.4,0) ein oberes erstes lokales Extremum (E_120.4,1b) in Form eines Maximums und bei einer niedrigeren magnetischen Flussdichte (B) bezogen auf das 120,4mT Minimum (E_120.4,0) ein unteres erstes lokales Extremum (E_120.4,1a) in Form eines Maximums.
• • In einem Abstand von ca. 2,70mT zueinander befinden sich bei einer höheren magnetischen Flussdichte (B) bezogen auf das 120,4 mT Minimum (E_120.4,0) ein oberes zweites lokales Extremum (E_120.4,2b) in Form eines Minimums und bei einer niedrigeren magnetischen Flussdichte (B) bezogen auf das 120,4 mT Minimum (E_120.4,0) ein unteres erstes lokales Extremum (E_120.4,2a) in Form eines Minimums.
• • dass sich in einem Abstand von ca. 4,7mT zueinander befinden sich bei einer höheren magnetischen Flussdichte (B) bezogen auf das 120,4 mT Minimum (E_120.4,0) ein oberes drittes lokales Extremum (E_120.4,3b) in Form eines Maximums und bei einer niedrigeren magnetischen Flussdichte (B) bezogen auf das 120,4mT Minimum (E_120.4,0) ein unteres drittes lokales Extremum (E_120.4,3a) in Form eines Maximums.

The 120.4 mT minimum (E _120.4.0 ) is characterized as the main fluorescence feature by the following features:

• • At a distance of approx. 1.30mT from one another and with a higher magnetic flux density (B) in relation to the 120.4 mT minimum (E _120.4.0 ) there is an upper first local extremum (E _120.4.1b ) in the form of a maximum and at a lower magnetic flux density (B) relative to the 120.4mT minimum (E _120.4.0 ) a lower first local extremum (E _120.4.1a ) in the form of a maximum.
• • At a distance of approx. 2.70mT from each other and with a higher magnetic flux density (B) in relation to the 120.4 mT minimum (E _120.4.0 ) there is an upper second local extremum (E _120.4.2b ) in the form of a minimum and at a lower magnetic flux density (B) in relation to the 120.4 mT minimum (E _120.4.0 ) a lower first local extremum (E _120.4.2a ) in the form of a minimum.
• • that at a distance of approx. 4.7mT from each other there is a higher magnetic flux density (B) related to the 120.4 mT minimum (E _120.4.0 ) an upper third local extremum (E _120.4.3b ) in the form a maximum and at a lower magnetic flux density (B) related to the 120.4mT minimum (E _120.4.0 ) a lower third local extremum (E _120.4.3a ) in the form of a maximum.

• • Bereitstellen eines HD-NV-Diamanten (HDNV);
• • Bereitstellen einer Magnetfeldquelle (MGx, MGy, MGz);
• • Bestrahlen des HD-NV-Diamanten (HDNV) mit Pumpstrahlung (LB);
• • Erfassen der Intensität der Fluoreszenzstrahlung (FL) des HD-NV-Diamanten (HDNV);
• • Bilden eines Messwerts für die Intensität der Fluoreszenzstrahlung (FL) des HD-NV-Diamanten (HDNV),
• • Änderung der Stärke der magnetischen Flussdichte (B), die den HD-NV-Diamanten (HDNV) durchströmt, in der Art, dass die magnetische Flussdichte (B) sich im 102,4mT Minimum (E_102.4,0) des Messwerts der Intensität der Fluoreszenzstrahlung (FL) befindet.

The procedure then comprises the following steps in an analogous manner:

• • Provide a HD NV Diamond (HDNV);
• • Providing a magnetic field source (MGx, MGy, MGz);
• • irradiating the HD-NV diamond (HDNV) with pump radiation (LB);
• • detecting the intensity of the fluorescence radiation (FL) of the HD-NV diamond (HDNV);
• • Forming a measurement value for the intensity of the fluorescence radiation (FL) of the HD-NV diamond (HDNV),
• • Changing the strength of the magnetic flux density (B) flowing through the HDNV diamond (HDNV) such that the magnetic flux density (B) is at the 102.4mT minimum (E _102.4.0 ) of the intensity reading of fluorescence radiation (FL).

• • Voraussagen eines wahrscheinlichen Bereichs für die Magnetfeldquellenparameter der Magnetfeldquelle (MGx, MGy, MGz), in dem diese Magnetfeldquellenparameter der Magnetfeldquelle (MGx, MGy, MGz) sich befinden müssen, um die magnetischen Flussdichte (B) auf den Wert des 102,4 mT Extremums (E_120.4,0) einzustellen;
• • Einstellen der Magnetfeldquelle (MGx, MGy, MGz) entsprechend dieser Magnetfeldquellenparameter;
• • Variieren der Magnetfeldquellenparameter der Magnetfeldquelle (MGx, MGy, MGz) unter Erfassen der Fluoreszenzstrahlung (FL) und Einstellen des lokalen Minimums.

A further development of the method again improves the starting value for the search for the 102.4mT minimum (E _102.4.0 ). Such an improved method then includes the following additional steps:

• • Predicting a likely range for the magnetic field source parameters of the magnetic field source (MGx, MGy, MGz) in which these magnetic field source parameters of the magnetic field source (MGx, MGy, MGz) must be located in order to reduce the magnetic flux density (B) to the value of 102.4 mT set extremum (E _120.4.0 );
• • Adjusting the magnetic field source (MGx, MGy, MGz) according to these magnetic field source parameters;
• • Varying the magnetic field source parameters of the magnetic field source (MGx, MGy, MGz) while detecting the fluorescence radiation (FL) and adjusting the local minimum.

The method then finds the minima and maxima by means of an iterative search, for example by means of iterative change in the energization of magnetic field-generating coils, and can then identify them as the sought-after fluorescence features by comparing them relative to one another.

In general, such an identification of the fluorescence features then enables correction factors to be calculated. This applies to all fluorescence features mentioned in this document. In this way, specific magnetic flux densities B can be assigned to specific current values for energizing the magnetic field-generating coils, which in turn correspond to the magnetic flux densities B of the identified fluorescence features. By means of polynomial approximation, a computer unit (CPU) can then use the correction factors determined in this way to conclude the necessary energization by means of a corresponding calculation if the control device (STV) is to set intermediate values of the magnetic flux density B that do not correspond to any identified magnetic flux density B of a functional feature.

It is therefore also an essential step of the method here that the device that executes the method checks whether an extremum that may have been found is the 102.4 mT minimum (E _102.4.0 ). In order to carry out such a check, the device preferably changes the magnetic flux density and uses the changing intensity of the fluorescence radiation (FL) in the vicinity of the extremum to search for further fluorescence features with a different characteristic magnetic flux density B. The device searches for the corresponding pattern of the arrangement . The device assumes a linear mapping. So the device does not look for the absolute values, but for the relative pattern.

Unless the set minimum is the 102.4 mT minimum (E _102.4.0 ), the device performing the method preferably repeats the steps previously described to continue the search.

• • Bereitstellen eines HD-NV-Diamanten (HDNV);
• • Bereitstellen einer Magnetfeldquelle (MGx, MGy, MGz);
• • Bestrahlen des HD-NV-Diamanten (HDNV) mit Pumpstrahlung (LB), wobei die Pumpstrahlung (LB) mit einem Modulationssignal (S5) moduliert ist;
• • Erfassen der Modulation der Intensität der Fluoreszenzstrahlung (FL) des HD-NV-Diamanten (HDNV);
• • Bilden eines Messwerts für die Verzögerung der Modulation Intensität der Fluoreszenzstrahlung (FL) des HD-NV-Diamanten (HDNV) gegenüber dem Modulationssignal;
• • Änderung der Stärke der magnetischen Flussdichte (B), die den HD-NV-Diamanten (HDNV) durchströmt, in der Art, dass die magnetische Flussdichte (B) sich im 102,4 mT Maximum (E_102.4,0) des Messwerts der Verzögerung der Modulation der Intensität der Fluoreszenzstrahlung (FL) befindet.

As before, a method based on the changing time delay of the modulation of the intensity of the fluorescence radiation (FL) versus the modulation of the intensity of the pump radiation can be used (LB) or the modulation of the modulation signal (S5). Such a method for calibrating a magnetic flux density (B) then includes the following steps:

• • Provide a HD NV Diamond (HDNV);
• • Providing a magnetic field source (MGx, MGy, MGz);
• • irradiating the HD-NV diamond (HDNV) with pump radiation (LB), the pump radiation (LB) being modulated with a modulation signal (S5);
• • detecting the modulation of the fluorescence radiation (FL) intensity of the HD-NV diamond (HDNV);
• • Forming a measured value for the delay of the modulation intensity of the fluorescence radiation (FL) of the HD-NV diamond (HDNV) compared to the modulation signal;
• • Changing the strength of the magnetic flux density (B) flowing through the HDNV diamond (HDNV) such that the magnetic flux density (B) is at the 102.4 mT maximum (E _102.4.0 ) of the measured value of the Delay of the modulation of the intensity of the fluorescence radiation (FL) is located.

• • Voraussagen eines wahrscheinlichen Bereichs für die Magnetfeldquellenparameter der Magnetfeldquelle (MGx, MGy, MGz), in dem diese Magnetfeldquellenparameter der Magnetfeldquelle (MGx, MGy, MGz) sich befinden müssen, um die magnetischen Flussdichte (B) auf den Wert des 102,4mT Extremums (E_102.4,0) einzustellen;
• • Einstellen der Magnetfeldquelle (MGx, MGy, MGz) entsprechend dieser Magnetfeldquellenparameter;
• • Variieren der Magnetfeldquellenparameter der Magnetfeldquelle (MGx, MGy, MGz) unter Erfassen der Fluoreszenzstrahlung (FL) und Einstellen des lokalen Maximums.

A further development of the method again improves the starting value for the search for the 102.4mT maximum (E _102.4.0 ). Such an improved method then includes the following additional steps:

• • Predicting a probable range for the magnetic field source parameters of the magnetic field source (MGx, MGy, MGz), in which these magnetic field source parameters of the magnetic field source (MGx, MGy, MGz) must be located in order to reduce the magnetic flux density (B) to the value of the 102.4mT extremum (E _102.4.0 );
• • Adjusting the magnetic field source (MGx, MGy, MGz) according to these magnetic field source parameters;
• • Varying the magnetic field source parameters of the magnetic field source (MGx, MGy, MGz) while detecting the fluorescence radiation (FL) and setting the local maximum.

The method then finds the minima and maxima by means of an iterative search, for example by means of iterative change in the energization of magnetic field-generating coils, and can then identify them as the sought-after fluorescence features by comparing them relative to one another.

In general, such an identification of the fluorescence features then enables correction factors to be calculated. This applies to all fluorescence features mentioned in this document. In this way, specific magnetic flux densities B can be assigned to specific current values for energizing the magnetic field-generating coils, which in turn correspond to the magnetic flux densities B of the identified fluorescence features. By means of polynomial approximation, a computer unit (CPU) can then use the correction factors determined in this way to conclude the necessary energization by means of a corresponding calculation if the control device (STV) is to set intermediate values of the magnetic flux density B that do not correspond to any identified magnetic flux density B of a functional feature.

It is therefore also an essential step of the method here that the device that executes the method checks whether an extremum that may have been found is the 102.4 mT maximum (E _102.4.0 ). In order to carry out such a check, the device preferably changes the magnetic flux density and uses the changing delay in the modulation of the intensity of the fluorescence radiation (FL) in the vicinity of the extremum to search for further fluorescence features with a different characteristic magnetic flux density B. The device searches for that corresponding pattern of the arrangement. The device assumes a linear mapping. So the device does not look for the absolute values, but for the relative pattern.

Unless the set maximum is the 102.4 mT maximum (E _102.4.0 ), the device performing the method preferably repeats the steps previously described to continue the search.

Group IIIe: Calibration method 59.5 mT (E _59.5.0 )

The document presented here now specifies a method for calibrating a magnetic flux density (B) based on the main fluorescence feature (E _59.5.0 ) at 59.5 mT in a similar way.

• • Bereitstellen eines HD-NV-Diamanten (HDNV);
• • Bereitstellen einer Magnetfeldquelle (MGx, MGy, MGz);
• • Bestrahlen des HD-NV-Diamanten (HDNV) mit Pumpstrahlung (LB);
• • Erfassen der Intensität der Fluoreszenzstrahlung (FL) des HD-NV-Diamanten (HDNV);
• • Bilden eines Messwerts für die Intensität der Fluoreszenzstrahlung (FL) des HD-NV-Diamanten (HDNV);
• • Änderung der Stärke der magnetischen Flussdichte (B), die den HD-NV-Diamanten (HDNV) durchströmt, in der Art, dass die magnetische Flussdichte (B) sich im 59,5 mT Minimum (E_59.5,0) des Messwerts der Intensität der Fluoreszenzstrahlung (FL) befindet.

The method for calibrating a magnetic flux density (B) includes the following steps in an analogous manner:

• • Provide a HD NV Diamond (HDNV);
• • Providing a magnetic field source (MGx, MGy, MGz);
• • irradiating the HD-NV diamond (HDNV) with pump radiation (LB);
• • detecting the intensity of the fluorescence radiation (FL) of the HD-NV diamond (HDNV);
• • forming a fluorescence radiation (FL) intensity reading of the HD-NV diamond (HDNV);
• • Changing the strength of the magnetic flux density (B) flowing through the HDNV diamond (HDNV) such that the magnetic flux density (B) is at the 59.5 mT minimum (E _59.5.0 ) of the measured value of the Intensity of the fluorescence radiation (FL) is located.

• • Voraussagen eines wahrscheinlichen Bereichs für die Magnetfeldquellenparameter der Magnetfeldquelle (MGx, MGy, MGz), in dem diese Magnetfeldquellenparameter der Magnetfeldquelle (MGx, MGy, MGz) sich befinden müssen, um die magnetischen Flussdichte (B) auf den Wert des 59.5mT Extremums (E_59.5,0) einzustellen;
• • Einstellen der Magnetfeldquelle (MGx, MGy, MGz) entsprechend dieser Magnetfeldquellenparameter;
• • Variieren der Magnetfeldquellenparameter der Magnetfeldquelle (MGx, MGy, MGz) unter Erfassen der Fluoreszenzstrahlung (FL) und Einstellen des lokalen Minimums.

A further development of the method again improves the starting value for the search for the 59.5 mT minimum (E _59.5.0 ). Such an improved method then includes the following additional steps:

• • Predicting a probable range for the magnetic field source parameters of the magnetic field source (MGx, MGy, MGz), in which these magnetic field source parameters of the magnetic field source (MGx, MGy, MGz) must be located in order to reduce the magnetic flux density (B) to the value of the 59.5mT extremum ( E _59.5.0 );
• • Adjusting the magnetic field source (MGx, MGy, MGz) according to these magnetic field source parameters;
• • Varying the magnetic field source parameters of the magnetic field source (MGx, MGy, MGz) while detecting the fluorescence radiation (FL) and adjusting the local minimum.

The method then finds the minima and maxima by means of an iterative search, for example by means of iterative change in the energization of magnetic field-generating coils, and can then identify them as the sought-after fluorescence features by comparing them relative to one another.

In general, such an identification of the fluorescence features then enables correction factors to be calculated. This applies to all fluorescence features mentioned in this document. In this way, specific magnetic flux densities B can be assigned to specific current values for energizing the magnetic field-generating coils, which in turn correspond to the magnetic flux densities B of the identified fluorescence features. By means of polynomial approximation, a computer unit (CPU) can then use the correction factors determined in this way to conclude the necessary energization by means of a corresponding calculation if the control device (STV) is to set intermediate values of the magnetic flux density B that do not correspond to any identified magnetic flux density B of a functional feature.

It is therefore also an essential step of the method here that the device that executes the method checks whether any extremum found is the 59.5 mT minimum (E _59.5.0 ). In order to carry out such a check, the device preferably changes the magnetic flux density and uses the changing intensity of the fluorescence radiation (FL) in the vicinity of the extremum to search for further fluorescence features with a different characteristic magnetic flux density B. The device searches for the corresponding pattern of the arrangement . The device assumes a linear mapping. So the device does not look for the absolute values, but for the relative pattern.

Unless the set minimum is the 59.5 mT minimum (E _59.5.0 ), the device performing the method preferably repeats the steps previously described to continue the search.

• • Bereitstellen eines HD-NV-Diamanten (HDNV);
• • Bereitstellen einer Magnetfeldquelle (MGx, MGy, MGz);
• • Bestrahlen des HD-NV-Diamanten (HDNV) mit Pumpstrahlung (LB);
• • Erfassen der zeitlichen Verzögerung der Modulation der Intensität der Fluoreszenzstrahlung (FL) des HD-NV-Diamanten (HDNV) gegenüber der Modulation der Intensität der Pumpstrahlung (LB) bzw. der Modulation des Modulationssignals (S5);
• • Bilden eines Messwerts für die zeitlichen Verzögerung der Modulation der Intensität der Fluoreszenzstrahlung (FL) des HD-NV-Diamanten (HDNV) gegenüber der Modulation der Intensität der Pumpstrahlung (LB) bzw. der Modulation des Modulationssignals (S5),
• • gekennzeichnet dadurch
• • Änderung der Stärke der magnetischen Flussdichte (B), die den HD-NV-Diamanten (HDNV) durchströmt, in der Art, dass die magnetische Flussdichte (B) sich im 59.5 mT Maximum (E_59.5,0) des Messwerts der zeitlichen Verzögerung der Modulation der Intensität der Fluoreszenzstrahlung (FL) gegenüber der Modulation der Intensität der Pumpstrahlung (LB) bzw. der Modulation des Modulationssignals (S5) befindet.

As before, a method based on the changing time delay of the modulation of the intensity of the fluorescence radiation (FL) compared to the modulation of the intensity of the pump radiation (LB) or the modulation of the modulation signal (S5) can be specified. Such a method for calibrating a magnetic flux density (B) then includes the following steps in an analogous manner:

• • Provide a HD NV Diamond (HDNV);
• • Providing a magnetic field source (MGx, MGy, MGz);
• • irradiating the HD-NV diamond (HDNV) with pump radiation (LB);
• • detecting the time delay of the modulation of the intensity of the fluorescence radiation (FL) of the HD-NV diamond (HDNV) compared to the modulation of the intensity of the pump radiation (LB) or the modulation of the modulation signal (S5);
• • forming a measured value for the time delay of the modulation of the intensity of the fluorescence radiation (FL) of the HD-NV diamond (HDNV) compared to the modulation of the intensity of the pump radiation (LB) or the modulation of the modulation signal (S5),
• • Characterized by
• • Changing the magnitude of the magnetic flux density (B) flowing through the HDNV diamond (HDNV) such that the magnetic flux density (B) is at the 59.5 mT maximum (E _59.5.0 ) of the time lag reading the modulation of the intensity of the fluorescence radiation (FL) compared to the modulation of the intensity of the pump radiation (LB) or the modulation of the modulation signal (S5).

• • Voraussagen eines wahrscheinlichen Bereichs für die Magnetfeldquellenparameter der Magnetfeldquelle (MGx, MGy, MGz), in dem diese Magnetfeldquellenparameter der Magnetfeldquelle (MGx, MGy, MGz) sich befinden müssen, um die magnetischen Flussdichte (B) auf den Wert des 59.5mT Extremums (E_59.5,0) einzustellen;
• • Einstellen der Magnetfeldquelle (MGx, MGy, MGz) entsprechend dieser Magnetfeldquellenparameter;
• • Variieren der Magnetfeldquellenparameter der Magnetfeldquelle (MGx, MGy, MGz) unter Erfassen der zeitlichen Verzögerung der Modulation der Intensität der Fluoreszenzstrahlung (FL) gegenüber der Modulation der Intensität der Pumpstrahlung (LB) bzw. der Modulation des Modulationssignals (S5) und Einstellen des lokalen Maximums.

A further development of the method again improves the starting value for the search for the 59.5 mT maximum (E _59.5.0 ). Such an improved method then includes the following additional steps:

• • Predicting a probable range for the magnetic field source parameters of the magnetic field source (MGx, MGy, MGz), in which these magnetic field source parameters of the magnetic field source (MGx, MGy, MGz) must be located in order to reduce the magnetic flux density (B) to the value of the 59.5mT extremum ( E _59.5.0 );
• • Adjusting the magnetic field source (MGx, MGy, MGz) according to these magnetic field source parameters;
• • Varying the magnetic field source parameters of the magnetic field source (MGx, MGy, MGz) by detecting the time delay of the modulation of the intensity of the fluorescence radiation (FL) compared to the modulation of the intensity of the pump radiation (LB) or the modulation of the modulation signal (S5) and setting the local max.

The method then finds the minima and maxima by means of an iterative search, for example by means of iterative change in the energization of magnetic field-generating coils, and can then identify them as the sought-after fluorescence features by comparing them relative to one another.

In general, such an identification of the fluorescence features then enables correction factors to be calculated. This applies to all fluorescence features mentioned in this document. In this way, specific magnetic flux densities B can be assigned to specific current values for energizing the magnetic field-generating coils, which in turn correspond to the magnetic flux densities B of the identified fluorescence features. By means of polynomial approximation, a computer unit (CPU) can then use the correction factors determined in this way to conclude the necessary energization by means of a corresponding calculation if the control device (STV) is to set intermediate values of the magnetic flux density B that do not correspond to any identified magnetic flux density B of a functional feature.

It is therefore also an essential step of the method here that the device that executes the method checks whether an extreme that may have been found is the 59.5 mT maximum (E _59.5.0 ). In order to carry out such a check, the device preferably changes the magnetic flux density B and, with the help of the changing time delay of the modulation of the intensity of the fluorescence radiation (FL) compared to the modulation of the intensity of the pump radiation (LB) or the modulation of the modulation signal (S5 ) in the vicinity of the extremum for further fluorescence features with a different characteristic magnetic flux density B. The device searches for the corresponding pattern of the arrangement. The device assumes a linear mapping. The device therefore preferably does not search for the absolute values, but for the relative pattern.

Unless the set maximum is the 59.5 mT maximum (E _59.5.0 ), the device performing the method preferably repeats the steps previously described to continue the search.

Group IV: tilt angle adjustment

Group IVa: General information on setting the tilt angle

Based on the methods described in the previous section on calibration methods, which change the angle dependence of the fluorescence radiation intensity and/or the time delay of the modulation of the intensity of the fluorescence radiation (FL) compared to the modulation of the intensity of the pump radiation (LB) or the modulation of the modulation signal ( S5), the technical teaching given here now specifies the use of this method for a tilt angle sensor. The basis of the method is the use of a typically goniometric alignment device. In the following of this section, this document first specifies a general procedure. Then follow methods that take advantage of different fluorescence characteristics of a HD-NV diamond.

• • Voraussagen eines wahrscheinlichen Bereichs für die Ausrichtungsparameter der Ausrichtungsvorrichtung (DMT, RT, HLT), in dem diese Ausrichtungsparameter der Ausrichtungsvorrichtung (DMT, RT, HLT) sich befinden müssen, um die Ausrichtung eines oder mehrerer paramagnetischer Zentren in Übereinstimmung mit der Richtung einer magnetischen Flussdichte (B) einzustellen;
• • Einstellen der Ausrichtungsvorrichtung (DMT, RT, HLT) entsprechend dieser Ausrichtungsparameter;
• • Variieren der Ausrichtungsparameter der Ausrichtungsvorrichtung (DMT, RT, HLT) unter Erfassen der Fluoreszenzstrahlung (FL) und Einstellen des lokalen Extremums des Fluoreszenzmerkmals.

The general procedure now proposed comprises the steps:

• • Predicting a likely range for the alignment device alignment parameters (DMT, RT, HLT) in which these alignment device alignment parameters (DMT, RT, HLT) must reside in order for the alignment of one or more paramagnetic centers to coincide with the direction of a magnetic adjust flux density (B);
• • Adjusting the alignment device (DMT, RT, HLT) according to these alignment parameters;
• • Varying the alignment parameters of the alignment device (DMT, RT, HLT) detecting the fluorescence radiation (FL) and adjusting the local extremum of the fluorescence feature.

The following predictions apply to the entire Group IV Rollover Angle section. The prediction can also be a constructive setting by a designer. In order to narrow the search area, the device cannot try an arbitrary set of alignment parameters, but must narrow itself down to a likely range, which is typically predetermined by design. Typically, the designer stores the values of the alignment parameters that the device tests beforehand in the memory (NVM, RMA) of the computer core (CPU) of the control device (STV). The prediction can then be understood in such a way that the computer core (CPU) queries this data from the memory (NVM, RAM) and, for example, on the basis of this data then calculates the said prediction or determines it in some other way. This also applies to the subsequent procedures in this section.

The device controller (CPU) adjusts the alignment device (DMT, RT, HLT) according to these alignment parameters. The alignment device 1 includes a diamond holder (DMT), a rotary device (RT) and a holder (HLT). The device of 1 is therefore an exemplary dual circuit goniometer (MEMSG). In the example of 1 the rotation device (RT) can rotate the diamond holder (DMT) around a Y-axis (AXy). The crystal with the paramagnetic center or centers or with the pair or pairs of paramagnetic centers is preferably fixed to the diamond holder (DH). The crystal may be or comprise diamond (HDNV). The crystal may be HD-NV diamond (HDNV) or may include such as a crystal domain, for example. The crystal may comprise one or more paramagnetic centers and/or one or more coupled pairs of paramagnetic centers and/or one or more clusters of coupled paramagnetic centers. The crystal may comprise one or more NV centers and/or one or more coupled pairs of NV centers and/or one or more clusters of coupled NV centers. The crystal may include one or more SiV centers and/or one or more coupled pairs of SiV centers and/or one or more clusters of coupled SiV centers. The crystal may comprise one or more GeV centers and/or one or more coupled pairs of GeV centers and/or one or more clusters of coupled GeV centers. The crystal may comprise one or more ST1 centers and/or one or more coupled pairs of ST1 centers and/or one or more clusters of coupled ST1 centers. The crystal may comprise one or more TR12 centers and/or one or more coupled pairs of TR12 centers and/or one or more clusters of coupled TR12 centers.

The diamond holder (DH) is mechanically connected to the rotation device (RT) so that it can rotate about a Y-axis (AXy). The computer core (CPU) of the control device (STV) transmits a setting value as an alignment parameter to a Y-axis motor controller (GDy) for the Y-axis (AXy) of the alignment device. The Y-axis motor controller (GDy) then causes the rotation device (RT) to rotate the diamond holder (DH) about the Y-axis (AXy). Preferably, the rotation device (RT) rotates the Diamond holder (DH) then by an angular amount specified by the computer core (CPU) of the motor control (GDy) for the Y axis (AXy) as an alignment parameter around the Y axis (AXy) in a likewise from the computer core (CPU) of the motor control (GDy ) for the Y-axis (AXy) specified rotation direction as an alignment parameter.

The rotation device in turn is in the example of 1 mechanically rotatable around a Z-axis (AXz) connected to the holder (HLT). The computer core (CPU) of the control device (STV) transmits a second setting value as an alignment parameter to a Z-axis motor controller (GDz) for the Z-axis (AXz) of the alignment device. The Z-axis motor controller (GDz) then causes the holder (HLT) to rotate the rotary device (RT) about the Z-axis (AXz). Preferably, the holder (HLT) then rotates the rotation device (RT) by an angular amount specified by the computer core (CPU) of the Z-axis motor controller (GDz) for the Z-axis (AXz) as an alignment parameter around the Z-axis (AXz) in a direction of rotation also specified by the computer core (CPU) of the Z-axis motor controller (GDz) for the Z-axis (AXz) as an alignment parameter.

A measurement of the fluorescence intensity of the fluorescence radiation (FL) of the crystal will generally show that this fluorescence radiation (FL) of the crystal does not yet signal the presence of a fluorescence feature. This can be due to both a misalignment of the crystal and an incorrect magnetic flux density at the location of the paramagnetic centers.

Therefore, an important development of the method is the step of checking whether it is the extremum of the desired fluorescence feature. For this purpose, the computer core (CPU) preferably varies the magnetic field by means of a varying control of the energization of the magnetic field generators (MGx, MGy, MGz). , and using the evaluation device (LIA) for different magnetic flux densities B and possibly also their orientations, the fluorescence intensity or the time delay of the modulation of the intensity of the fluorescence radiation (FL) compared to the modulation of the intensity of the pump radiation (LB) or the modulation the modulation signal (S5) or a signal derived from it.

As soon as the computer core (CPU) has found a fluorescence feature using the evaluation device (LIA), it can now use the alignment device (DH, RT, HLT) to optimize the alignment of the crystal by maximizing the effect of the fluorescence feature. The computer core (CPU) preferably maximizes the effect of several fluorescence features.

The computer core (CPU) preferably checks whether the fluorescence feature that the device has determined is the desired fluorescence feature. For this purpose, the computer core (CPU) preferably determines several fluorescence features and checks whether their relative distances of the corresponding determined magnetic flux densities of these fluorescence features to one another can be mapped to previously known magnetic flux densities of the corresponding expected fluorescence features, for example using a correction polynomial etc. If this is not the case, these are not the expected fluorescent features.

The method therefore includes the step of repeating the previous steps of the method of this section if the extremum set by means of crystal orientation and magnetic flux density is not the desired fluorescent feature. In this case, either the calibration of the magnetic flux density B or the orientation of the crystal is probably incorrect. At this point, for the sake of completeness, it should be mentioned that it can of course make sense to save and measure the shape of the fluorescence curve without considering the fluorescence characteristics and to use this as the basis for a rough pre-calibration. In this respect, this form of the fluorescence intensity curve of the intensity of the fluorescence radiation (FL) as a function of the magnetic flux density B can also be regarded as a fluorescence feature within the meaning of this document, even if no single value of a magnetic flux density can be assigned to it. In the same way, the shape of the fluorescence intensity delay curve of the time delay of the modulation of the intensity of the fluorescence radiation (FL) compared to the modulation of the intensity of the pump radiation (LB) or the modulation of the modulation signal (S5) or a signal derived therefrom as a function of the magnetic flux density B can also be regarded as a fluorescence feature within the meaning of this document, even if no single value of a magnetic flux density can be assigned to it.

Group IVb: flip angle setting with the fluorescence feature at 34mT

In a first development of the general method, a probable range for the alignment parameters of the alignment device (DMT, RT, HLT) is again predicted, in which these alignment parameters of the alignment device (DMT, RT, HLT) must be located in order to align one or more Adjust NV centers in accordance with the direction of a magnetic flux density (B). In this context, the document presented here refers again to the previously described general information about the predictions. Furthermore, the proposed method includes adjusting the alignment device (DMT, RT, HLT) according to these alignment parameters. In this development, the method also includes varying the alignment parameters of the alignment device (DMT, RT, HLT) while detecting the fluorescence radiation (FL) and setting the local minimum.

Finally, when executing a further development of the method, the device checks in a manner analogous to the general method whether it is the 34mT minimum (E _34.0 ). If this check shows that the set minimum is not the 34 mT minimum (E _34.0 ), the proposed device repeats the previously described steps of the method when carrying out the further development of the method.

Group IVc: flip angle setting with the fluorescence feature at 9.5mT

In a second development of the general method, a probable range for the alignment parameters of the alignment device (DMT, RT, HLT) is again predicted, in which these alignment parameters of the alignment device (DMT, RT, HLT) must be located in order to align one or more Adjust NV centers in accordance with the direction of a magnetic flux density (B). In this context, the document presented here refers again to the previously described general information about the predictions. Furthermore, the proposed method includes adjusting the alignment device (DMT, RT, HLT) according to these alignment parameters. In this development, the method also includes varying the alignment parameters of the alignment device (DMT, RT, HLT) while detecting the fluorescence radiation (FL) and setting the local minimum.

Finally, when executing a further development of the method, the device checks in a manner analogous to the general method whether the 9.5 mT minimum (E _9.5.0 ) is involved. If this check shows that the set minimum is not the 9.5 mT minimum (E _9.5.0 ), the proposed device repeats the previously described steps of the method when carrying out the further development of the method.

Group IVd: flip angle setting with the fluorescence feature at 102.4mT

In a third development of the general method, a probable range for the alignment parameters of the alignment device (DMT, RT, HLT) is again predicted, in which these alignment parameters of the alignment device (DMT, RT, HLT) must be located in order to align one or more Adjust NV centers in accordance with the direction of a magnetic flux density (B). In this context, the document presented here refers again to the previously described general information about the predictions. Furthermore, the proposed method includes adjusting the alignment device (DMT, RT, HLT) according to these alignment parameters. In this development, the method also includes varying the alignment parameters of the alignment device (DMT, RT, HLT) while detecting the fluorescence radiation (FL) and setting the local minimum.

Finally, when executing a further development of the method, the device checks in a manner analogous to the general method whether it is the 102.4mT minimum (E _102.4.0 ). If this check shows that the set minimum is not the 102.4mT minimum (E _102.4.0 ), the proposed device repeats the previously described steps of the method when carrying out the further development of the method.

Group IVe: flip angle setting with the fluorescence feature at 59.5mT

In a fourth development of the general method, a probable range for the alignment parameters of the alignment device (DMT, RT, HLT) is again predicted, in which these alignment parameters of the alignment device (DMT, RT, HLT) must be located in order to align one or more NV -Setting centers in accordance with the direction of a magnetic flux density (B). Furthermore, the proposed method includes adjusting the alignment device (DMT, RT, HLT) according to these alignment parameters. In this development, the method also includes varying the alignment parameters of the alignment device (DMT, RT, HLT) while detecting the fluorescence radiation (FL) and setting the local minimum.

Finally, when executing a further development of the method, the device checks in a manner analogous to the general method whether it is the 59.5 mT minimum (E _59.5.0 ). If this check shows that the set minimum is not the 59.5 mT minimum (E _59.5.0 ), the proposed device repeats the previously described steps of the method when carrying out the further development of the method.

Group V HD-NV diamonds

Group Va using a HD-NV diamond

The paper presented here proposes to use a HD NV diamond (HDNV) for a quantum technological device. Such a quantum technological device can be a sensor for a physical quantity, for example. Such a physical variable can be, for example, the magnetic flux density B, the magnetic excitation H, the change in the electric flux density D over time, the change in the electric field strength E over time, the electric current strength, the permeability μ _r , the dielectric constant εr, the location x, the Velocity v, acceleration a, gravitational acceleration g, temperature T, mechanical pressure p etc. as well as their time derivatives and integrals.

The writing presented here distinguishes between two types of HD-NV diamonds. The first grade is 59.5mT HD NV Diamonds (HDNV). A 59.5mT HD-NV diamond (HDNV) is characterized in the sense of this document in that the intensity of the fluorescence radiation (FL) of the HD-NV diamond (HDNV) shows a typical intensity drop when irradiated with a pump radiation : dip) of more than 2% and/or more than 5% with an external magnetic flux density (B) acting on the HD-NV diamond (HDNV) of about 59.5mT (E _59.5.0 ). , which indicates an NV-NV interaction and thus a small mean distance between the NV centers. Only a small drop in intensity of just under 1% was previously known from the prior art. The manufacture of the diamonds according to the method of DE 20 2020 106 110 U was now able to increase the density of the NV centers in the diamonds again. The depth of the intensity minimum 59.5mT (E _59.5.0 ) is thus a direct measure of an HD-NV diamond. The use of this gauge as a quality benchmark for an HDNV diamond is new in the art.

The writing presented here distinguishes another type of the two types of HD-NV diamonds. The second grade is 34.0mT HD-NV Diamonds (HDNV). This variety is completely unknown from the state of the art.

The paper presented here now proposes for the first time the use of a 34.0mT HD-NV diamond (HDNV) for a quantum technological device.

In the case of a 34.0mT HD-NV diamond (HDNV), the intensity of the fluorescence radiation (FL) of the HD-NV diamond (HDNV) exhibits a typical intensity drop (dip) of more than 0.01 when irradiated with a pump radiation % and/or better than 0.02% and/or better than 0.05% and/or better than 0.1% and/or better than 0.2% and/or better than more than 0.5% and/or preferably more than 1% and/or preferably more than 2% and/or preferably more than 5% at an external magnetic flux density ( B) of about 34.0 mT (E _34.0.0 ), which indicates an NV-NV interaction and thus a small mean distance between equivalent, i.e. aligned NV centers.

Typically 34.0mT HD NV Diamonds (HDNV) are also 59.5mT HD NV Diamonds (HDNV) at the same time, but only a small number of 59.5mT HD NV Diamonds (HDNV) are also at the same time 34.0mT HD NV Diamonds (HDNV). 34.0mT HD-NV diamonds (HDNV) therefore show a particularly high density of NV centers, which is particularly advantageous for many applications. This extremely high density of paramagnetic centers opens up completely new applications, since these diamonds then also have a higher density of coupling pairs to other inequivalent NV centers and a higher density of coupling pairs to the nuclear spins of isotopes with a higher density of nuclear nuclear spins coupling pairs to other paramagnetic centers that are not NV centers. As a result, these materials open up completely new fields of application.

The paper presented here proposes the use of a 0.0mT HD-NV diamond (HDNV) for a quantum technological device.

For a 0.0mT HD-NV diamond (HDNV), the intensity of the fluorescence radiation (FL) of the HD-NV diamond (HDNV) shows a typical intensity drop (dip) of more than 0.01 when irradiated with a pump radiation % and/or more than 0.02% and/or more than 0.05% and/or more than 0.1% and/or more than 0.2% and/or more than 0.5 % and/or greater than 1% and/or greater than 2% and/or greater than 5% at an external magnetic flux density (B) acting on the HD-NV diamond (HDNV) of about 0.0 mT (E _0.0,0 ). The physical background of this fluorescent feature is currently unclear.

Typically, 34.0mT HD NV Diamonds (HDNV) and 59.5mT HD NV Diamonds can also be 0.0mT Diamonds (HDNV) at the same time, but not all 0.0mT Diamonds (HDNV) are also at the same time 34.0mT HD NV Diamonds (HDNV). For example, it is conceivable to produce such diamonds (HDNV) based on paramagnetic centers other than NV centers. Such centers can be, for example, but not limited to, SiV centers or GeV centers or ST1 centers or TR12 centers.

The document presented here therefore proposes the use of an HD-iP diamond (HDNV) for a quantum technological device, the HD-iP diamond (HDNV) having a high density of similar and equivalent paramagnetic centers, i.e. paramagnetic centers of the same type aligned in the same way, having. An HD-iP diamond (HDNV) within the meaning of this document is characterized in that the intensity of the fluorescence radiation (FL) of the HD-iP diamond (HDNV) when irradiated with a pump radiation shows a typical intensity drop (English: dip) of more than 0.01% and/or better than 0.02% and/or better than 0.05% and/or better than 0.1% and/or better than 0.2% and /or better than 0.5% and/or better than 1% and/or better than 2% and/or better than 5% at HD-iP-Diamond (HDNV) impacting external magnetic flux density (B), which indicates an interaction between pairs of equal and equivalent paramagnetic centers and thus a small mean distance between equivalent, i.e. aligned, paramagnetic centers.

Typically, 34.0mT HD-NV Diamonds (HDNV) and 59.5mT HD-NV Diamonds are also HD-iP Diamonds (HDNV), but not all HD-iP Diamonds (HDNV) are also 34 at the same time .0mT HD NV Diamonds (HDNV) or 59.5mT HD NV Diamonds. For example, it is conceivable to produce HD-iP diamonds (HDNV) based on paramagnetic centers other than NV centers. Such centers can be, for example, but not only SiV centers or GeV centers or ST1 centers or TR12 centers.

The technical teaching of DE 20 2020 106 110 U for the production of such HD-NV diamonds is hereby part of the disclosure presented here. As far as national law allows, the combination of the technical teaching of DE 20 2020 106 110 U with the technical teaching presented here part of the disclosure of the document presented here.

Group Vb diamonds with NV-NV coupling

The paper presented here proposes a quantum technological device comprising a diamond (HDNV) and having a pair of NV centers of two coupled NV centers in diamond for the selection of the correct diamonds as HD-NV diamonds. According to the proposal, the quantum technological device uses this pair of NV centers to fulfill the intended purpose of the device. With regard to possible intended purposes, the document presented here refers to the list of documents from the prior art.

Group Vc 59mT HD NV Diamonds

Diamond with 59.5mT NV-NV coupling and 59mT HD-NV diamond

The paper presented here proposes a 59.5mT HD NV diamond (HDNV) comprising a pair of NV centers of two coupled NV centers. The 59.5mZ HD-NV diamond (HDNV) is preferably intended for use in a quantum technological device and/or in a quantum technological method. Such a 59.5mT-HD-NV diamond (HDNV) is characterized according to the document presented here by the fact that the intensity value curve of the intensity of the fluorescence radiation (FL) of the NV center pair when irradiated with a pump radiation (LB) with a pump radiation wavelength as a function of the value of the magnetic flux density (B) of a magnetic field external to the diamond, a typical intensity drop (dip) in the intensity of the fluorescence radiation (FL) of more than 2% and/or better of more than 5% for a external magnetic flux density (B) of about 59.5mT (E _59.1.0 ) acting on diamonds, which indicates an NV-NV interaction and thus a small mean distance between the NV centers of the NV center pair.

A further development of such a 59.5mT HD NV diamond (HDNV) has, for example, a large number of interconnected NV centers in a large number of pairs of NV centers, with the 59.5 HD NV diamond (HDNV) is intended for use in a quantum technological device and/or in a quantum technological method. According to the document presented here, this development of the 59.5mT HD-NV diamond is characterized in that the intensity value curve of the intensity of the fluorescence radiation (FL) of the HD-NV diamond (HDNV) when irradiated with a pump radiation (LB) with a pump radiation wavelength depending on the value of the magnetic flux density (B) of a magnetic field external to the 59.5mT-HD-NV diamond a typical intensity drop (English: dip) of the intensity of the fluorescence radiation (FL) of more than 2% and/or preferred of more than 5% at an external magnetic flux density (B) of about 59.5mT (E _59.1.0 ) acting on the HD-NV diamond (HDNV), which indicates an NV-NV interaction and thus a low average distance between the NV centers.

In an extension of the 59.5mT HD-NV diamond (HDNV), the 59.5mT HD-NV diamond (HDNV) preferably has a three-spin coupling between NV-NV-P1 or NV-P1-P1 . Here again, NV-NV-P1 means a coupling between a first NV center and a second NV center different from the first NV center and a first P1 center. Here NV-P1-P1 means a coupling between a first NV center and a first P1 center and a second P1 center different from the first P1 center.

In addition, the 59.5mT HD-NV diamond (HDNV) in a further development of the 59.5mT HD-NV diamond (HDNV) has a coupling of magnetically equivalent NV centers and/or the coupling of magnetically non-equivalent, i.e. inequivalent, NV centers.

Furthermore, in a development of the 59.5mT HD-NV diamond (HDNV), the intensity value curve of the intensity of the fluorescence radiation (FL) of the NV centers in the 59.5mT HD-NV diamond (HDNV) as a function of the magnetic flux density (B) features in the intensity curve of the fluorescence radiation (B) in the form of extremes depending on the magnetic flux density (B), in particular near a magnetic flux density of approx. 102mT (E _102.4.0 ), also referred to below as fluorescence radiation features , which as features (E _GSLAC13C , E _120.4,1a , E _120.4,1b , E 120.4,2a , E _120.4,2b , E _120.4,3a , E _120.4,3b , E _120.4,4a , _{E 120.4,4b ,} E _{120.4 ,5a} , E _120.4,5b , E _120.4,6a , E _120.4,6b ) a coupling between pairs of one or more NV centers and an isotope with a nuclear spin, in particular the nuclear spin of a ¹³ C isotope .

Typically, in further developments, the 59.5mT HD-NV diamond (HDNV) shows a drop in the intensity of the fluorescence radiation of 59.5mT (E _59.5.0 ) on the one hand and additionally at 0mT to 10mT and/or approx. 34mT (E _34.0 ) and/or 51mT (E _51.0 ) and/or 9.5mT (E _9.5.0 ) and/or 102.4mT (E _102.4.0 ).

In developments, the 59.5mT HD-NV diamond (HDNV) preferably has a coupling of at least two magnetically equivalent NV centers, with two NV centers being magnetically equivalent if they have the same orientation within the diamond crystal. This allows it to be recognized as a 34.0mT HD NV diamond.

Nevertheless, the 59.5mT HD-NV-Diamond (HDNV) can additionally also exhibit a coupling of at least two magnetically inequivalent NV-centres, without the usefulness typically decreasing for the usual quantum sensor applications. The writing presented here refers to the list of cited writings. Two NV centers are then magnetically inequivalent in the sense of the document presented here if they have a different alignment within the diamond crystal.

In developments of the 59.5mT HD-NV diamond (HDNV), the 59.5mT HD-NV diamond (HDNV) has a multiplicity of couplings from magnetically equivalent NV centers and/or a multiplicity of couplings from magnetically inequivalent NVs -centers, making the fluorescent features more prominent.

59.5mT HD-NV Diamond (HDNV) Quantum Technological Device

The document presented here now proposes a quantum technological device with an HD-NV diamond (HDNV), which is characterized in that the intensity of the fluorescence radiation (FL) of the HD-NV diamond (HDNV) when irradiated with a pump radiation (LB ) a typical dip (E _59.5.0 ) of more than 2% and/or more than 5% at an external magnetic flux density (B) acting on the HD-NV diamond (HDNV) of about 59 .5mT indicating NV-NV interaction and thus a small mean distance between NV centers and/or that the HD-NV Diamond (HDNV) is a 59.5mT HD-NV Diamond (HDNV) , as previously described. With regard to the quantum technological device, the document presented here refers to the devices from the stated prior art. The device described here is particularly suitable since a 59.5 mT HD NV diamond (HDNV) delivers an improved measurement signal due to the large NV center density.

Quantum technological process with 59.5mT HD-NV diamonds (HDNV)

The writing presented here now proposes in an analogous manner a quantum technological method using a HD-NV diamond (HDNV), which is characterized in that the intensity of the fluorescence radiation (FL) of the HD-NV diamond (HDNV) when irradiated with a pump radiation (LB) has a typical intensity drop (dip) of more than 2% and/or more than 5% at an external magnetic flux density (B) of about 59.5mT acting on the HD-NV diamond (HDNV). shows, indicating NV-NV interaction and thus a small mean distance between the NV centers and/or that the HD-NV diamond (HDNV) is a 59.5mT HD-NV diamond (HDNV), as previously described, is. With regard to the quantum technological methods, the document presented here refers to the methods from the stated prior art. The method described here is particularly suitable since a 59.5mT HD NV diamond (HDNV) delivers an improved measurement signal due to the large NV center density.

Group Vd 59mT NV-NV coupling

Already above, the paper presented here proposed a quantum technological device comprising diamond (HDNV) and having a pair of NV centers of two coupled NV centers in diamond. As already described above, the proposed quantum technological device preferably uses the pair of NV centers to fulfill the intended purpose. With regard to the interpretation of the term "intended purpose", the document presented here refers to the device from the documents in the list of documents cited in this document. In a further development, the quantum technological device is characterized in that the intensity value curve of the intensity of the fluorescence radiation (FL) of the NV center pair of the NV center pair of the diamond (HDNVD) upon irradiation with a pump radiation (LB) with a pump radiation wavelength in Depending on the value of the magnetic flux density (B) of a magnetic field external to the diamond, there is a typical intensity drop (dip) in the intensity of the fluorescence radiation (FL) of more than 2% and/or more than 5% for an external field acting on the diamond magnetic flux density (B) of about 59.5mT (E _59.1.0 ), which indicates an NV-NV interaction and thus a small mean distance between the NV centers of the NV center pair and/or that the diamond (HDNV) is a 59.5mT HD-NV diamond (HDNV) or that the diamond (HDNV) comprises a diamond domain that is a 59.5mT HD-NV diamond. Such a diamond is particularly suitable for use in quantum sensors, for example, since it delivers particularly good signals.

A development of the quantum technological device or the diamond in the quantum technological device preferably has a multiplicity of pairs of NV centers, which also improve the signals.

If such a device is intended to determine a measured value for a physical variable, such a quantum technological device has a pump radiation source (LD), a filter (F1), a photodetector (PD) and an evaluation unit in a development thereof. The evaluation unit can include an amplifier and/or a lock-in amplifier (LIA), for example. In the proposed device, the pump radiation source (LD) irradiates the pair of NV centers in the diamond with pump radiation (LB), whereupon typically the pair of NV centers emits fluorescence radiation (FL). The filter (F1) separates the fluorescence radiation (FL) of the pair of NV centers from the pump radiation (LB), so that essentially only fluorescence radiation (FL), in particular of the pair of NV centers, preferably reaches the photodetector (PD). The photodetector (PD) converts the intensity of the fluorescence radiation (FL) of the pair of NV centers or the intensity profile of the fluorescence radiation (FL) over time from the pair of NV centers into a value of a receiver output signal (S0) or a value profile over time of the receiver output signal (S0). The evaluation unit converts the value of a receiver output signal (S0) or the time course of the value of the receiver output signal (S0) into a measured value or into a course of measured values over time for a physical variable. In order for this to be possible, the physical quantity to be measured must influence the intensity of the fluorescence radiation (FL) from the pair of NV centers. These physical variables can be the following variables, for example: the value of the magnetic flux density B, the value of the magnetic excitation H, the value of the mechanical stress or the mechanical stress tensor in the diamond, the acceleration a, the position x, the speed v, the temperature T, the change in the electric flux density over time dD/dt, the ring integral of the electric field strength E, the relative permeability µ _r of the environment and/or its nth time derivative dµ _r /dt ⁿ , the dielectric constant ε _r of the environment and/or or its nth time derivative dε _r /dt ⁿ , the gravitational acceleration a, the mechanical pressure p, the electrical current intensity I, the electrical current density J, the spatial curvature and/or the curvature tensor. This list is not complete here. The evaluation unit keeps the measured value and/or the time profile of the measured value or a signal derived therefrom for the physical variable and/or outputs this information. The advantage is the efficient measurement of physical variables.

A further development of these devices of this group Vd is a quantum technological device in which the pair of NV centers is exposed to a magnetic bias field with a magnetic flux density B with a value between 57mT and 66mT, with a bias field of 59.5mT being preferred is. This allows the device to utilize the fluorescent feature of the 59.5mT fluorescent feature (E _59.5.0 ).

A proposed group Vd quantum technological device can thus also work as a receiver for an electromagnetic wave in a further development of the invention. Because of the increased sensitivity, such a device can then achieve increased ranges.

In a further development, the quantum technological device converts the time profile of the intensity of the fluorescence radiation (FL) of the pair of NV centers into a time profile of a received signal (S0). Sub-devices that follow in the signal path can then further process the received signal.

In analogy to the quantum technological device described above, which evaluates the intensity of the fluorescence radiation (FL9 of the paramagnetic centers), the document presented here also specifies a corresponding quantum technological device that the delay time of the modulation of the intensity of the fluorescence radiation (FL) compared to the modulation of the intensity the pump radiation (LB) of the pump radiation source (LD) and/or the modulation signal (S5) or a signal derived therefrom.The document presented here therefore proposes a quantum technological device for the group described here on the basis of the devices described above, which has a pump radiation source (LD), a filter (F1), a photodetector (PD) and an evaluation unit. The evaluation unit can again include in particular an amplifier and/or a lock-in amplifier (LIA). As before, the pump radiation source (LD) again irradiates the NV center pair in the slide manten with a modulation signal modulated pump radiation (LB) with a pump radiation wavelength (λ _pmp ). Due to this irradiation, the pair of NV centers emits modulated fluorescence (FL) radiation. The filter (F1) again preferentially separates the fluorescence radiation (FL) of the pair of NV centers from the pump radiation (LB), so that essentially only radiation with the fluorescence wavelength (λ _fl ) of the fluorescence radiation (FL) and thus essentially in particular fluorescence radiation ( FL) of the pair of NV centers reaches the photodetector (PD). The photodetector (PD) records the intensity profile of the fluorescence radiation (FL) over time of the pair of NV centers and converts this into a time course of values of a receiver output signal (S0). The evaluation unit preferably converts the time delay of the time profile of the receiver output signal (S0) compared to the modulation signal (S5) into a measured value and/or a measured value profile for a physical quantity. This physical variable influences the time delay of the modulation of the intensity of the fluorescence radiation (FL) compared to the modulation of the intensity of the pump radiation (LB) or the modulation of the modulation signal (S5) or a signal derived therefrom. Typically, this document assumes that the delay of the modulation of the modulation signal versus the modulation of the intensity of the pump radiation (LB) is essentially negligible for the particular application. Therefore, the reader of the document presented here can expressly read a detection of the delay in the modulation of the intensity of the fluorescence radiation (FL) compared to the modulation of the modulation signal (S5) if from the detection of the delay in the modulation of the intensity of the fluorescence radiation (FL) compared to a modulation the pump radiation (LB) is discussed. Conversely, the reader of the document presented here can expressly also read a detection of the delay in the modulation of the intensity of the fluorescence radiation (FL) compared to the modulation of the pump radiation (LB) if the detection of the delay in the modulation of the intensity of the fluorescence radiation (FL) compared to a Modulation of the modulation signal (S5) is discussed. This applies to the entire writing presented here. Said physical variable influences the intensity of the fluorescence radiation (FL) of the pair of NV centers and the delay in the intensity profile over time of the modulation of the fluorescence radiation (FL) of the pair of NV centers compared to the modulation signal. The document presented here already describes at various previous points the nature of physical quantities that can influence the fluorescence radiation (FL). What is described there and in the prior art cited also expressly applies here. What is special now is that the pair of NV centers is exposed to a magnetic bias field with a magnetic offset flux density B ₀ with a value between 30 mT and 37 mT, with a bias field with a magnetic offset flux density B ₀ of 34.0 mT is preferred. As a result, the quantum technological device performs the measurement in the vicinity of the 34.0 mT fluorescent feature (E _34.0.0 ). This has the advantage of increased sensitivity. The evaluation unit then again has the measured value or measured value profile for the physical variable at least partially ready and/or outputs it. An exemplary evaluation unit includes, for example, the control device (STV) with a computer core (CPU) and a non-volatile memory (NVM) and a read/write memory (RAM) and a data bus interface (DBIF) and a motor data bus interface (MDBIF) and an internal one data bus (INTDB) and an external data bus (EXTDB) and a device internal data bus (MDB) and a lock-in amplifier (LIA) or the like and a waveform generator (WFG) with freely programmable waveform.

In one development, the quantum technological device preferably comprises an alignment device (DMT, RT, HLT). The alignment device (DMT, RT, HLT) aligns the diamond to a magnetic field with a magnetic flux density (B).

Preferably, the alignment device (DMT, RT, HLT) comprises a single-circle goniometer or a dual-circle goniometer (MEMSG) or a triple-circle goniometer.

Group VI diamond with 34mT NV-NV coupling of equivalent NV center pairs and HD-NV diamond)

The document presented here thus discloses a diamond (HDNV), which preferably uses a methodology corresponding to the technical teaching of DE 20 2020 106 110 U was produced. The diamond preferably has a pair of NV centers of two coupled equivalent NV centers, the diamond (HDNV) being intended for use in a quantum technological device and/or in a quantum technological method. The diamond is characterized by the fact that the intensity value curve of the intensity of the fluorescence radiation (FL) of the pair of NV centers when irradiated with a pump radiation (LB) with a pump radiation wavelength as a function of the value of the magnetic flux density (B) of a magnetic field external to the diamond a typical intensity drop (English: dip) of the intensity of the fluorescence radiation (FL) of more than 0.01% and/or better of more than 0.02% and/or better of more than 0.05% and/or better of more than 0.1% and/or better than 0.2% and/or better than 0.5% and/or 1% and/or better than 2% and/or better than 5% at an external magnetic flux density (B) acting on the diamond of about 34.0 mT (E _34.0.0 ), which indicates an NV-NV interaction of equivalent pairs of NV centers and thus a small mean distance between the equivalent NV -Centers indicates.

It is particularly preferably an HD-NV diamond (HDNV) with a multiplicity of pairs of NV-NV centers coupled to one another and consisting of equivalent NV centers. Such is preferred HDNV diamond intended for use in a quantum technological device and/or method. Such a diamond was preferred preferably by means of a methodology in accordance with the technical teaching of DE 20 2020 106 110 U manufactured. Such an HD-NV diamond is characterized in that the intensity value curve of the intensity of the fluorescence radiation (FL) of the HD-NV diamond (HDNV) when irradiated with a pump radiation (LB) with a pump radiation wavelength as a function of the value of the magnetic flux density ( B) a magnetic field external to the HD-NV diamond has a typical intensity drop (dip) in the intensity of the fluorescence radiation (FL) of more than 0.01% and/or better than 0.02% and/or better than 0.02% more than 0.05% and/or better than 0.1% and/or better than 0.2% and/or better than 0.5% and/or better than 1% and/or better than 2% and/or better than 5% at an external magnetic flux density (B) acting on the HD-NV diamond (HDNV) of about 34.0 mT (E _34.0.0 ), showing the a NV-NV interaction of equivalent pairs of NV centers and thus a small mean distance between the equivalent NV centers n indicates.

Such HD-NV diamonds (HDNV) particularly preferably also have a three-spin coupling between NV-NV-P1 or NV-P1-P1. Here, NV-NV-P1 means a coupling between a first NV center and a second NV center, which is different from the first NV center, and a first P1 center. NV-P1-P1 means a coupling between a first NV center and a first P1 center and a second P1 center that is different from the first P1 center.

Such a HD-NV diamond (HDNV) can also have a coupling of magnetically equivalent NV centers and/or the coupling of magnetically non-equivalent, i.e. inequivalent, NV centers. This is particularly advantageous if the different orientation in sensor systems is to be exploited.

Typically, the intensity value curve of the intensity of the fluorescence radiation (FL) of the NV centers in the HD-NV diamond (HDNV) as a function of the magnetic flux density (B) then has features in the intensity profile of the fluorescence radiation (B) in the form of extrema as a function of the magnetic flux density (B) in particular close to a magnetic flux density of approx. 102mT (E _102.4.0 ). The document presented here also designates such extrema as fluorescence radiation characteristics in the following. In the case mentioned here, these fluorescent features can be used as features (E _GSLAC13C , E _120.4,1a , E _120.4,1b , E _120.4,2a , E _120.4,2b , E _120.4,3a , E _120.4,3b , E _120.4,4a , E _120.4.4b , E _120.4.5a , E _120.4.5b , E _120.4.6a , E _120.4.6b ) a coupling between pairs of one or more NV centers and an isotope with a nuclear spin, in particular the nuclear spin of a ¹³ C -isotopes.

A HD-NV diamond (HDNV) typically exhibits a dip in fluorescence (FL) intensity at 0mT to 10mT and/or around 34mT (E _34.0 ) and/or 51mT (E _51.0 ) and/or 59 .5mT (E _59.5.0 ) and/or 9.5mT (E _9.5.0 ) and/or 102.4mT (E _102.4.0 ). The drop in the intensity of the fluorescence radiation (FL) at approx. 34mT (E _34.0 ), which was previously completely unknown, is particularly striking.

Firstly, such a HD-NV diamond (HDNV) can thus have a coupling of at least two magnetically equivalent NV centers, with two NV centers being magnetically equivalent if they have the same orientation within the diamond crystal. Secondly, such an HD-NV diamond (HDNV) can thus have a coupling of at least two magnetically inequivalent NV centers, with two NV centers being magnetically inequivalent if they have a different alignment within the diamond crystal.

Of course, the HD-NV diamond (HDNV) can also have a large number, ie more than two, of couplings of magnetically equivalent NV centers and/or a large number, ie more than two, of couplings of magnetically inequivalent NV centers.

This results in a quantum technological device with an HD-NV diamond (HDNV), which is characterized in that the intensity of the fluorescence radiation (FL) of the HD-NV diamond (HDNV) exhibits a typical intensity drop when irradiated with a pump radiation (LB). (English: Dip) (E _59.5.0 ) of more than 2% and/or more than 5% with an external magnetic flux density (B) acting on the HD-NV diamond (HDNV) of about 59.5mT, which indicates an NV-NV interaction and thus a small mean distance between the NV centers. Of course, the diamond can be HD-NV diamond as described above.

Such a device is microwave-free and does not require a microwave drive.

A quantum technological method that uses such a HD-NV diamond (HDNV) corresponds to this device. Such a method is characterized in that the intensity of the fluorescence radiation (FL) of the HD-NV diamond (HDNV) when irradiated with a pump radiation (LB) has a typical drop in intensity (English: dip) of more than 2% and/or of more than 5% at an external magnetic flux density (B) acting on the HD-NV diamond (HDNV) of about 59.5mT, indicating NV-NV interaction and thus a small mean distance between the NV centers . Of course, the diamond here can also be an HD-NV diamond as described above.

Group VII using a 0.0 mT HD-NV diamond

An observation of the drop in fluorescence intensity of the fluorescence radiation of an NV diamond is reported in the reference hereby for HD NV diamonds. The document presented here therefore proposes the use of a 0.0mT HD-NV diamond (HDNV) for a quantum technological device, for example a quantum sensor. Such a 0.0mT HD-NV diamond (HDNV) and thus such a device is characterized in that the intensity of the fluorescence radiation (FL) of the 0.0mT HD-NV diamond (HDNV) when irradiated with a pump radiation a typical intensity drop (dip) of more than 0.01% and/or preferably more than 0.02% and/or better than more than 0.05% and/or better than more than 0.1% and/or or better than 0.2% and/or better than 0.5% and/or better than 1% and/or better than 2% and/or better than 5% at a external magnetic flux density (B) applied to the 0.0mT HD-NV diamonds (HDNV) of about 0.0 mT (E _0.0.0 ). During the development of the technical teaching of the document presented here, the typical intensity drop observed was approximately 1.2%.

A 0.0mT HD-NV diamond (HDNV) corresponds to this, with the 0.0mT HD-NV diamond (HDNV) having a high density of paramagnetic centers at least in one area. This high density of paramagnetic centers within the .0mT HD-NV diamond (HDNV) is characterized by the fact that the intensity of the fluorescence radiation (FL) of the 0.0mT HD-NV diamond (HDNV) when irradiated with a pump radiation ( LB) a typical intensity drop (dip) of more than 0.01% and/or better than 0.02% and/or better than 0.05% and/or better than 0.1% and/or better than 0.2% and/or better than 0.5% and/or better than 1% and/or better than 2% and/or better than 5% an external magnetic flux density (B) acting on the 0.0mT HD-NV diamond (HDNV) of about 0.0 mT (E _0.0,0 ). During the development of the technical teaching of the document presented here, the typical intensity drop observed was approximately 1.2%.

A quantum technological device also corresponds to this, wherein the quantum technological device comprises a 0.0 mT HD NV diamond (HDNV). The 0.0mT HD-NV diamond (HDNV) has a high density of paramagnetic centers in at least one area. In the sense of the document presented here, this area can also include the entire 0.0mT HD-NV diamond (HDNV). This high density of paramagnetic centers is preferably again characterized in that the intensity of the fluorescence radiation (FL) of the 0.0mT HD-NV diamond (HDNV) when irradiated with pump radiation (LB) shows a typical intensity drop (dip) of more than 0.01% and/or better than 0.02% and/or better than 0.05% and/or better than 0.1% and/or better than 0.2% and /or better than 0.5% and/or better than 1% and/or better than 2% and/or better than 5% for any on the 0.0mT HD-NV diamonds (HDNV) applied external magnetic flux density (B) of about 0.0 mT (E _0.0.0 ). During the development of the technical teaching of the document presented here, the typical intensity drop observed was approximately 1.2%.

An exemplary application of such a quantum technological device is, for example, a quantum sensor for determining a value of a physical variable that influences the intensity of the fluorescence radiation (FL) of the 0.0 mT HD NV diamond (HDNV). In this context, the document presented here expressly refers to the documents listed in the list of documents cited.

Similarly, there is a use of a 0.0mT HD NV Diamond (HDNV) for a quantum technological device, where the device again evaluates delay. In this case, the time delay of the modulation of the intensity of the fluorescence radiation (FL) of the 0.0mT HD-NV diamond (HDNV) compared to the modulation of a modulation signal (S5) or the modulation of a pump radiation (LB) when irradiated with a the modulated pump radiation (LB) has a typical increase (English: Increase) in this time delay of more than 0.01% and/or better than more than 0.02% and/or better than more than 0.05% and/or better greater than 0.1% and/or better than 0.2% and/or better than 0.5% and/or better than 1% and/or better than 2% and/or better than 5% at a concentration based on the 0.0mT-HD-NV- External magnetic flux density (B) acting on diamonds (HDNV) of about 0.0 mT (E _0.0.0 ). In developing the technical teaching of the present document, the typical observed increase in the time lag was about 1.2%.

Analogously, the document presented here can again define a 0.0mT HD NV diamond (HDNV) on the basis of the time delay. According to this, a 0.0mT HD-NV diamond (HDNV) has a high density of paramagnetic centers in at least one area. Again, this area can encompass the entire diamond. This high density of paramagnetic centers is preferably again characterized in that the time delay of the modulation of the intensity of the fluorescence radiation (FL) of the 0.0mT HD-NV diamond (HDNV) compared to the modulation of a modulation signal (S5) or the modulation of a pump radiation (LB) when irradiated with a modulated pump radiation (LB) a typical increase (English: Increase) of this time delay of more than 0.01% and / or better than 0.02% and / or better than more than 0.05% and/or better than 0.1% and/or better than 0.2% and/or better than 0.5% and/or better than 1% and/or better greater than 2% and/or better greater than 5% at an external magnetic flux density (B) acting on the 0.0mT HD-NV diamond (HDNV) of about 0.0mT (E _0.0.0 ). . In developing the technical teaching of the present document, the typical observed increase in the time lag was about 1.2%.

In an analogous manner, a quantum technological device again results, which comprises a 0.0mT HD-NV diamond (HDNV). As before, the 0.0mT HD-NV Diamond (HDNV) exhibits a high density of paramagnetic centers in at least one area. Again, this area can include the entire diamond. This high density of paramagnetic centers is typically also characterized by the fact that the time delay of the modulation of the intensity of the fluorescence radiation (FL) of the 0.0mT HD-NV diamond (HDNV) compared to the modulation of a modulation signal (S5) or the modulation of a pump radiation (LB) when irradiated with a modulated pump radiation (LB) a typical increase (English: Increase) of this time delay of more than 0.01% and / or better than 0.02% and / or better than more than 0.05% and/or better than 0.1% and/or better than 0.2% and/or better than 0.5% and/or better than 1% and/or better greater than 2% and/or better greater than 5% at an external magnetic flux density (B) acting on the 0.0mT HD-NV diamond (HDNV) of about 0.0mT (E _0.0.0 ). . In developing the technical teaching of the present document, the typical observed increase in the time lag was about 1.2%.

A further development of the quantum-technological device is characterized in that the quantum-technological device is a quantum sensor for determining a value of a physical variable which is the time delay of the modulation of the intensity of the fluorescence radiation (FL) of the 0.0mT HD-NV diamond (HDNV) influenced by the modulation of the modulation signal (S5) or the modulation of a pump radiation (LB).

Group VIII 59.5mT NV-NV coupling

In this group, the document presented here now describes a quantum technological device which includes a diamond (HDNV). The device has an NV center pair of two coupled NV centers in diamond. The quantum technological device uses this pair of NV centers to fulfill the intended purpose. For example, it can be an NV center pair of a quantum sensor.

A development of the quantum technological device of this group VII is characterized in that the intensity value curve of the intensity of the fluorescence radiation (FL) of the NV center pair of the NV center pair of the diamond (HDNVD) upon irradiation with a pump radiation (LB) with a pump radiation wavelength as a function of the value of the magnetic flux density (B) of a magnetic field external to the diamond, a typical intensity drop (dip) in the intensity of the fluorescence radiation (FL) of more than 2% and/or better of more than 5% for a external magnetic flux density (B) of about 59.5mT (E _59.1.0 ) acting on diamonds, which indicates an NV-NV interaction and thus a small mean distance between the NV centers of the NV center pair.

A further development of the quantum technological device preferably has a large number of pairs of NV centers. A diamond of the quantum technological device then typically also has a large number of pairs of NV centers.

Such a quantum technological device of group VII discussed here preferably comprises a pump radiation source (LD), a filter (F1), a photodetector (PD) and an evaluation unit. The evaluation unit can particularly preferably include an amplifier and/or a lock-in amplifier (LIA). The pump radiation source (LD) typically irradiates the pair of NV centers in the diamond with pump radiation (LB). As a result, the pair of NV centers typically emit fluorescence radiation (FL). The filter (F1) again separates the fluorescence radiation (FL) from the pair of NV centers from the pump radiation (LB), so that essentially only fluorescence radiation (FL), in particular from the pair of NV centers, reaches the photodetector (PD). The photodetector (PD) converts the intensity of the fluorescence radiation (FL) of the pair of NV centers or the temporal intensity curve of the fluorescence radiation (FL) of the pair of NV centers into a value or a value curve of a receiver output signal (S0). The evaluation unit converts the value of a receiver output signal (S0) into a measured value for a physical quantity. If the value of the receiver output signal (S0) changes over time, the evaluation unit converts the value over time of a receiver output signal (S0) into a measured value over time for this physical quantity. This publication has already pointed out above the possible physical variables that influence the fluorescence of the pair of NV centers. These physical quantities are also relevant here. The physical size therefore influences the intensity of the fluorescence radiation (FL) of the NV center pair. The evaluation unit keeps the measured value for the physical quantity ready and/or outputs it. The same applies to a sequence of measured values.

According to the technical teaching of the document presented here, a development of the quantum technological device of group VII presented here describes a quantum technological device in which the pair of NV centers is exposed to a magnetic bias field with a magnetic flux density B with a value between 57mT and 66mT , with a bias field of 59.5mT being preferred. A corresponding physical quantity is preferably one of the quantities the magnetic flux density B, the acceleration a, the speed v, the location x, the electric flux density D or the time derivative of the electric flux density D, the mechanical stress, the mechanical stress tensor or the Temperature.

From this it follows that the quantum technological device can be a receiver for an electromagnetic wave. In the exemplary case, the quantum technological device can, for example, convert the time profile of the intensity of the fluorescence radiation (FL) of the pair of NV centers into a time profile of a received signal.

A proposed quantum technological device again preferably comprises a pump radiation source (LD), a filter (F1), a photodetector (PD) and an evaluation unit, which in particular can comprise an amplifier and/or a lock-in amplifier (LIA). The pump radiation source (LD) then again irradiates the pair of NV centers in the diamond with a pump radiation (LB) modulated by a modulation signal. The pair of NV centers emits modulated fluorescence radiation (FL). the filter (F1) separates the fluorescence radiation (FL) of the NV center pair from the pump radiation (LB), so that essentially only radiation with the fluorescence wavelength (λ _fl ) of the fluorescence radiation (FL), in particular the fluorescence radiation (FL) of the NV -Centers pair reaching the photodetector (PD). The photodetector (PD) converts the time course of the intensity of the fluorescence radiation (FL) of the pair of NV centers into a time course of values of a receiver output signal (S0). The evaluation unit then converts the time delay of the time profile of the receiver output signal (S0) compared to the modulation signal into a measured value and/or a measured value profile for a physical quantity. The physical variable influences the intensity of the fluorescence radiation (FL) of the pair of NV centers and/or the time delay of the temporal intensity profile of the modulation of the fluorescence radiation (FL) of the pair of NV centers compared to the modulation signal (S5).

The pair of NV centers is preferably exposed to a magnetic bias field with a magnetic flux density B with a value between 57 mT and 66 mT, a bias field of 59.5 mT being preferred. The evaluation unit keeps the measured value or measured value curve for the physical variable at least partially ready and/or outputs it.

A preferred development of the quantum technological device preferably comprises an alignment device, the alignment device aligning the diamond with respect to a magnetic field with a magnetic flux density (B).

Group IX device with energy reserve

• • Durchführung einer quantentechnologischen Messung unter Zuhilfenahme zumindest eines Quantenpunkts und/oder eines paramagnetischen Zentrums und/oder eines NV-Zentrums in Diamant und/oder einer Vielzahl von Quantenpunkten und/oder einer Vielzahl paramagnetische Zentren und/oder einer Vielzahl von NV-Zentren innerhalb eines ersten Zeitraums;
• • Stoppen oder Unterlassen der Durchführung der quantentechnologischen Messung innerhalb eines zweiten Zeitraums;
• • Versorgen von zumindest eines Teils der Vorrichtungsteile, die Verbraucher elektrischer Energie sind, mit elektrischer Energie in den ersten Zeiträumen, in denen die Messung erfolgt, aus einer Energiereserve (BENG).

The document presented here now also describes a method for operating a quantum measurement system and/or a quantum technological device, in which the quantum measurement system or the quantum technological device comprises device parts that are consumers of electrical energy. The problem that the method proposed here solves is the avoidance of radiation from electromagnetic interference via the voltage supply lines. The proposed procedure to solve this problem includes the steps:

• • Carrying out a quantum technological measurement with the help of at least one quantum dot and/or one paramagnetic center and/or one NV center in diamond and/or a large number of quantum dots and/or a large number of paramagnetic centers and/or a large number of NV centers within a first period;
• • Stopping or refraining from carrying out the quantum technological measurement within a second period of time;
• • Supplying at least some of the device parts that are consumers of electrical energy with electrical energy from an energy reserve (BENG) in the first time periods in which the measurement takes place.

The first time period differs from the second time period. The first time period and the second time period should not overlap in time.

In the first period of time, the most sensitive device parts of the quantum technological device are supplied via the energy reserve (BENG). This is preferably an electrical energy store, such as an accumulator or a rechargeable battery or a battery or a capacitor or an inductor. In the first period, a voltage regulator (SRG) preferably supplies the quantum technological device with electrical energy, for example from a charging device (LDV). The quantum technological measurements and operations preferably take place in the first period. The group IX quantum technological device can be, for example, a quantum sensor, a quantum noise generator QRNG (also referred to as TRNG) or a quantum computer.

In a development of the device, the energy reserve (BENG) is preferably charged in the second time periods, in particular by means of a charging device (LDV), in particular in the form of a voltage regulator (SRG) or a current regulator.

As already mentioned, the energy reserve (BENG) can include a battery, in particular a rechargeable battery, and/or an accumulator and/or a capacitor and/or a coil, i.e. an inductance.

The energy reserve (BENG) is therefore preferably rechargeable, with the energy reserve (BENG) being charged with energy by means of a charging device (LDV). The operation of the quantum technological device then preferably includes the step of electrically separating the charging device (LDV) in the first time periods, for example by means of a separating device (TS), from at least some of the other device parts of the quantum measurement system and/or the quantum technological device. This ensures that, for example, disturbances in the automotive energy supply line cannot disrupt the quantum technological processes per transient.

The proposed method and the proposed quantum technological device preferably perform the separation using a separation device (TS), in particular in the form of a switch or a transistor or a diode or another semiconductor switch or a relay or a MEMS relay or the like.

Such a quantum measurement system and/or such a quantum technological device can, for example, perform a quantum technological measurement within a first time period with the aid of at least one quantum dot and/or a paramagnetic center and/or an NV center in diamond and/or a multiplicity of quantum dots and/or a multiplicity of paramagnetic centers and/or a multiplicity of NV centers. In contrast, the quantum measurement system and/or the quantum technological device stops the quantum technological measurement or quantum technological operation within a second period of time or does not perform this quantum technological measurement or operation in this second period of time. Quantum sensors, quantum noise generators and/or quantum computers can use this method, for example. As before, the first time period is preferably different from the second time period. Here, too, the first time period and the second time period preferably do not overlap in time.

On this basis, the document presented here can now propose a quantum measurement system and/or the quantum technological device, which include device parts that are consumers of electrical energy. What is special here is that the quantum measurement system and/or the quantum technological device includes an energy reserve (BENG) and that this energy reserve (BENG) supplies at least some of the consumers of electrical energy with electrical energy in the first periods in which the quantum technological measurement is carried out .

The quantum measurement system and/or the quantum technological device preferably comprises a charging device (LDV). The charging device (LDV) preferably charges the energy reserve (BENG), in particular in the form of a voltage regulator or a current regulator, in the second time periods.

The energy reserve (BENG) preferably again comprises a battery, in particular a rechargeable battery, and/or an accumulator and/or a capacitor and/or a coil and/or a mechanical energy storage device.

The proposed quantum measurement system and/or the quantum technological device preferably has a separating device (TS), the separating device (TS) accommodating the charging device (LDV) in the first periods of time from at least some of the remaining device parts of the quantum measurement system and/or the quantum technological device and/or or electrically separates from at least some of the device parts of the quantum measurement system and/or the quantum technological device, in particular those that are sensitive to fluctuations in the electrical supply voltage and/or fluctuations in the electrical supply current.

The separating device (TS) can comprise, for example, a switch or a transistor or a diode or another semiconductor switch or a relay or a MEMS relay or the like.

Group X device with goniometer (MEMSG)

The document presented here now proposes using the fluorescence characteristics to align the crystals or diamonds in production. This requires special alignment tools.

The document presented here therefore proposes a quantum measuring system and/or quantum technological device with a diamond (HDNV), a magnetic field generating device (MG) and with a single-circle goniometer or with a double-circle goniometer (MEMSG) or with a triple-circle goniometer. This publication designates single-circle goniometers and dual-circle goniometers (MEMSG) and triple-circle goniometers with the collective term "goniometer". A single-circle goniometer, as used herein, is typically an instrument that allows an object to be rotated about an axis to an angular position at an angle relative to a reference body. A two-circle goniometer (MEMSG) in the sense of this document is typically an instrument that makes it possible to rotate an object about two axes into an angular position based on two angles relative to a reference body. A three-ring goniometer, as used herein, is typically an instrument that allows an object to be rotated about three axes into an angular position at three angles relative to a reference body. The diamond (HDNV) typically comprises at least one paramagnetic center and/or a plurality of paramagnetic centers and/or one or more clusters of paramagnetic centers and/or one or more pairs of coupled paramagnetic centers and/or one or more clusters of pairs of coupled paramagnetic centers. The diamond may include NV centers and/or ST1 centers and/or SiV centers and/or GeV centers and/or TR12 centers as paramagnetic centers. In general, the diamond (HDNV) can be an HD-NV diamond. The diamond (HDNV, especially its paramagnetic centers) emits fluorescence radiation (FL) when irradiated with pump radiation (LB). The pump radiation (LB) can be modulated with a modulation depending on a modulation signal (S5). The intensity of the diamond's fluorescence radiation (FL) (HDNV) typically shows with correct alignment of the When the magnetic flux density (B) of a magnetic field is swept, diamond shows a fluorescence feature in the form of an extremum of the intensity of the fluorescence radiation (FL) at a magnetic flux density B corresponding to this fluorescence feature. When correctly aligned, the diamond (HDNV) typically also shows a time delay in the modulation of the intensity of the fluorescence radiation (FL) of the diamond compared to the modulation signal (S5) or the modulation of the intensity of the pump radiation (LB) when the magnetic flux density (B) is tuned Magnetic field a fluorescence feature in the form of an extremum of this time delay of the fluorescence radiation (FL) at a magnetic flux density B corresponding to a fluorescence feature. During operation of the quantum measurement system and/or operation of the quantum technological device, the goniometer aligns the diamond (HDNV) at least temporarily in such a way that this extremum of the intensity of the fluorescence radiation (FL) is effective for the operation of the quantum measurement system and/or the operation of the quantum technological device . The goniometer can be a MEMS goniometer (MEMSG), for example.

Another embodiment of the quantum measurement system and/or quantum technological device comprises a HD-NV diamond (HDNV), a magnetic field generating device (MG) and a single-circle goniometer or a double-circle goniometer (MEMSG) or a triple-circle goniometer. The HD-NV diamond in this variant includes NV centers, specifically pairs of NV centers. The NV centers and/or the HD-NV diamond emit fluorescence radiation (FL) when irradiated with pump radiation (LB). The pump radiation (LB) is preferably modulated with a modulation depending on a modulation signal (S5). The intensity of the fluorescence radiation (FL) of the NV centers and/or the HD-NV diamond (HDNV) shows a fluorescence characteristic in the form of an extremum of the intensity of the fluorescence radiation (FL) when the magnitude of the magnetic flux density (B) of a magnetic field is swept a magnetic flux density B corresponding to this fluorescence feature. The time delay of the modulation of the intensity of the fluorescence radiation (FL) of the NV centers or of the HD-NV diamond (HDNV) compared to the modulation signal (S5) or the modulation of the intensity of the pump radiation (LB) shows when tuning the amount of the magnetic Flux density (B) of a magnetic field a fluorescence feature in the form of an extremum of this delay of the fluorescence radiation (FL) at a magnetic flux density B corresponding to a fluorescence feature. The goniometer aligns the HD-NV diamond (HDNV) at least temporarily during operation of the quantum measurement system and/or the quantum technological device in such a way that this extremum of the intensity of the fluorescence radiation (FL) is necessary for the operation of the quantum measurement system and/or the operation of the quantum technological device is effective. The goniometer can be a MEMS goniometer (MEMSG), for example.

Another embodiment of the quantum measurement system and/or the quantum technological device comprises a diamond (HDNV), a magnetic field generating device (MG) and a single-circle goniometer or a double-circle goniometer (MEMSG) or a triple-circle goniometer. An area within the diamond is now preferably an HD-NV diamond area. The characteristics of a HD-NV diamond apply to the HD-NV diamond area. In particular, it preferentially shows the fluorescence characteristics (E _34.0.0 ) and (E _59.5.0 ). The HD-NV diamond area therefore has NV centers (NV1, NV2). The HD-NV diamond region emits fluorescence (FL) radiation when irradiated with pump radiation (LB). The intensity of the fluorescence (FL) of the NV centers and/or the HD-NV diamond region (HDNV) shows a fluorescence characteristic in the form of an extremum of the intensity of the fluorescence (FL) when the magnitude of the magnetic flux density (B) of a magnetic field is swept a magnetic flux density B corresponding to this fluorescence feature. The time delay of the modulation of the intensity of the fluorescence radiation (FL) of the NV centers or the HD-NV diamond area (HDNV) compared to the modulation signal (S5) or the modulation of the intensity of the pump radiation (LB) shows when tuning the amount of the magnetic Flux density (B) of a magnetic field a fluorescence feature in the form of an extremum of this delay of the fluorescence radiation (FL) at a magnetic flux density B corresponding to a fluorescence feature. A goniometer aligns the HD-NV diamond area at least temporarily during operation of the quantum measurement system and/or the quantum technological device in such a way that this extremum of the intensity of the fluorescence radiation (FL) is effective for the operation of the quantum measurement system and/or the operation of the quantum technological device. The goniometer can be a MEMS goniometer (MEMSG), for example.

Another embodiment of the quantum measurement system and/or the quantum technological device comprises a single crystal, a magnetic field generating device (MG) and a single-circle goniometer or a double-circle goniometer (MEMSG) or a triple-circle goniometer. Quantum measurement system and/or quantum technological device. The single crystal preferably has at least a pair of at least one first paramagnetic center (NV1) and one second paramagnetic center (NV2). That at least at least one pair of paramagnetic centers and/or the single crystal emits fluorescence radiation (FL) when irradiated with pump radiation (LB).

The intensity of the fluorescence radiation (FL) of the at least one pair of paramagnetic centers and/or the single crystal shows a fluorescence characteristic in the form of an extremum of the intensity of the fluorescence radiation (FL) at a magnetic flux density B when the amount of the magnetic flux density (B) of a magnetic field is tuned corresponding to this fluorescent feature. The time delay of the modulation of the intensity of the fluorescence radiation (FL) of the at least one pair of paramagnetic centers or of the crystal compared to the modulation signal (S5) or the modulation of the intensity of the pump radiation (LB) shows when tuning the amount of the magnetic flux density (B) a magnetic field, a fluorescence feature in the form of an extremum of this delay in the fluorescence radiation (FL) at a magnetic flux density B corresponding to the fluorescence feature. This fluorescent radiation characteristic in question is typically due to dipole-dipole coupling of the two paramagnetic centers due to a sufficiently small separation of the two paramagnetic centers of the pair of paramagnetic centers. The goniometer aligns the single crystal at least temporarily during operation of the quantum measurement system and/or the quantum technological device such that this extremum of the intensity of the fluorescence radiation (FL) is effective for the operation of the quantum measurement system and/or the operation of the quantum technological device. The goniometer can be a MEMS goniometer (MEMSG), for example.

The single crystal diamond crystal is preferably a diamond. The paramagnetic centers are then preferably NV centers and/or SiV centers and/or GeV centers and/or ST1 centers and/or TR12 centers.

In addition to mechanically aligning the single crystal, in particular the HD-NV diamond, with respect to the housing and thus with respect to the magnetic field, a magnetic field generating device can also align the magnetic field with respect to the single crystal, ie, for example, with respect to the HD-NV diamond.

The document presented here therefore proposes a further development of the quantum measuring systems and/or quantum technological devices. According to the proposal, the device comprises a magnetic field generating device (MG, MGz, MGy, MGx), which is located at the location of the paramagnetic centers (NV1, NV2) or at the location of the coupled pair of paramagnetic centers or at the location of the NV centers or at the location of the coupled NV center pair or at the location of the SiV centers or at the location of the coupled SiV center pair or at the location of the GeV center or at the location of the coupled GeV center pair or at the location of the ST1 centers or at the location of the coupled ST1 center pair or at the location of the TR12 centers or at the location of the coupled TR12 center pair or at the location of the single crystal or at the location of the diamond or at the location of the HD-NV diamonds generates a magnetic offset flux density B ₀ . The magnetic offset flux density B ₀ is superimposed summing up with an external magnetic flux density B _ext to form a total magnetic flux density B _g m at the location of the paramagnetic centers (NV1, NV2) or at the location of the pair of coupled paramagnetic centers or at the location of the NV- centers or at the location of the coupled NV center pair or at the location of the SiV centers or at the location of the coupled SiV center pair or at the location of the GeV centers or at the location of the coupled GeV center pair or at the location of the ST1 centers or at the location of the coupled ST1 center pair or at the location of the TR11 centers or at the location of the coupled TR12 center pair or at the location of the single crystal or at the location of the diamond or at the location of the HD-NV diamond. The paramagnetic centers (NV1, NV2) or the pair of coupled paramagnetic centers or the NV centers or the coupled NV center pair or the SiV centers or the coupled SiV center pair or the GeV Centers or the coupled GeV center pair or the ST1 centers or the coupled ST1 center pair or the TR12 centers or the coupled TR12 center pair or the single crystal or the diamond or the HD-NV diamond emit fluorescence radiation (FL) with a fluorescence wavelength (λ _fl ) when irradiated with pump radiation (LB). The device includes means for detecting this fluorescence radiation (FL) and converting it into a measured value which depends on a parameter of the fluorescence radiation (FL). The device includes means to keep the measured value ready and/or to output it at least temporarily.

In a development, the device is exposed to an external magnetic field with an external magnetic flux density B _ext . The fluorescence radiation (FL) depends on the external magnetic flux density B _ext . The device preferably comprises means for detecting this fluorescence radiation (FL) and converting it into a measured value for a parameter of the external magnetic flux density B _ext , in particular dere the amount of the external magnetic flux density B _ext to convert. Furthermore, the device preferably includes means to keep this measured value ready and/or to output it at least temporarily.

In a development, the device is exposed to an external physical parameter. The fluorescence radiation (FL) depends on the external physical. The device preferably includes means for detecting this fluorescence radiation (FL) and converting it into a measured value for an external physical one. Furthermore, the device preferably includes means to keep this measured value ready and/or to output it at least temporarily.

Furthermore, the document presented here proposes a development of the quantum measurement system and/or the quantum technological device, in which the device preferably has means for measuring the spin of the electron configuration of one or more paramagnetic centers or one or more NV centers or one or more ST1 centers or one or more TR12 centers or one or more SiV centers or one or more GeV centers or one or more coupled NV center pairs or one or more coupled ST1 center pairs or to modify one or more pairs of TR12 coupled centers or one or more pairs of coupled SiV centers or one or more pairs of GeV centers coupled or one or more paramagnetic centers or one or more pairs of coupled paramagnetic centers . This can be, for example, crossed lines. The writing presented here refers to the writings listed in the list of cited writings.

Group XI manufacturing process with alignment device and with Cpk>1.66

Bezogen auf den Kippwinkelbereich bedeutet das: $${\text{C}}_{\text{pk}}=\left[\text{Minimum}\left(\mathrm{\mu +}\left|\text{Kippwinkelbereich}\right|\text{;Kippwinkelbereich}-\mathrm{\mu }\right)\right]/\left(3*\mathrm{\sigma }\right)$$

The paper presented here explicitly proposes using the fluorescence characteristics of the fluorescence radiation (FL) of the crystals for the alignment of the crystals, in particular the HD-NV diamonds and diamonds in series production. The result of applying such a method using some fluorescence features is a set of n identical quantum technological devices from a series production of m quantum technological devices. Although these n identical quantum technological devices are alike, they differ in the usual production fluctuations. A set of n identical quantum technological devices that was produced using the fluorescence features then has particularly good statistics as a technical feature. In order for the statistics to be able to provide reasonably good statements, a minimum number of samples is required. the
The base number n of the sample of quantum technological devices should therefore be greater than 10 and/or better than 20 and/or better than 50 and/or better than 100 and/or better than 200 and/or better than 500 and/or more preferably greater than 1000 and/or more preferably greater than 2000 and/or more preferably greater than 5000. The base number n is a positive integer. The number m of the total population of quantum technological devices must of course be an integer greater than or equal to n. The n quantum technological devices are therefore the same, but not identical in design, since otherwise they would not be distinguishable. Each of the quantum technological devices has a housing for this respective quantum technological device. Each of the quantum technological devices has a respective crystal, in particular a respective diamond. The crystal preferably comprises one or more paramagnetic centers (NV1, NV2) or one or more pairs of coupled paramagnetic centers or one or more NV centers or one or more coupled pairs of NV centers or one or more SiV centers or one or more coupled SiV center pairs or one or more GeV centers or one or more coupled GeV center pairs or one or more ST1 centers or one or more coupled ST1 center pairs or one or more TR12 centers or one or more coupled pairs of TR12 centers or a single crystal or a diamond or a HD-NV diamond or a HD-NV diamond domain. Each housing of a respective quantum technological device preferably has a respective mounting surface. We can define this respective mounting surface of the respective quantum technological device here in the following ways: Firstly, a respective connecting surface between the respective diamond of the respective quantum technological device and the respective housing of the respective quantum technological device can define the respective mounting surface of the respective quantum technological device. Secondly, attachment points of the respective housing of the respective quantum technological device can define the respective mounting surface of the respective quantum technological device. These attachment points can be, for example, soldering connections of the housing, which essentially lie in one plane. In particular, such fastening points can also be respective electrical connections of the respective housing of the respective quantum technological device. The respective mounting surface of the respective quantum technological device then always has a respective surface normal. The respective crystal or diamond of the respective quantum technological device has a respective Crystal direction of the respective crystal or diamond of the respective quantum technological device. This respective crystal direction is typically tilted by a respective tilt angle with respect to the respective surface normal of the respective quantum technological device. In this case, the tilting angle can be 0°, in particular in the optimal case. The n respective tilt angles of these n crystal directions of the different n identical quantum technological devices differ at least in part, especially during operation, by no more than +/-10° and/or preferably no more than +/-5° and/or better not more than +/-2° and/or better not more than +/-1° better and/or better not more than +/-0.5° and/or better not more than +/-0.2° and/or or better not more than +/-0.1 and/or better not more than +/-0.05° and/or better not more than +/-0.02° and/or better not more than +/-0 .01 and/or better not more than +/-0.005° and/or better not more than +/-0.002° and/or better not more than +/-0.001 related to the respective housing of the respective device. In this case, these tilt angles have a scattering σ of the tilt angles. The mean value of the tilt angles is µ here. In this case, these tilt angles have a scattering σ of the tilt angles. An important variable in production is the C _pk value of a parameter. According to the general teaching of the state of the art for calculating the Cpk value, the C _pk value is then obtained as $${\text{C}}_{\text{pk}}=\left[\text{minimum}\left(\mathrm{\mu }-\text{lower stop limit; upper stop limit}-\mathrm{\mu }\right)\right]/\left(3*\mathrm{\sigma }\right)$$

In relation to the tilting angle range, this means: $${\text{C}}_{\text{pk}}=\left[\text{minimum}\left(\mathrm{\mu +}\left|\text{tilt angle range}\right|\text{;Tilt angle range}-\mathrm{\mu }\right)\right]/\left(3*\mathrm{\sigma }\right)$$

The elaboration of the technical teaching of this document showed that the C _pk value of the tilt angle of the n quantum technological devices at these times related to the tilt angle interval of +/-10° and/or +/-5° and/or +/-2° and/or +/-1° and/or +/-0.5° and/or +/-0.2° and/or +/-0.1 and/or +/-0.05° and/or +/-0.02° and/or +/-0.01 and/or +/-0.005° and/or +/-0.002° and/or +/-0.001 related to the respective surface normals of the respective mounting surfaces of the respective housing of the same n quantum technological devices is better than 1.66 if the manufacturing process of the quantum technological devices aligns the crystals, for example the diamonds or the HD-NV diamonds, using a fluorescence feature, as proposed, by means of an alignment device or by means of a device-specifically adjustable magnetic field generating device the direction of the respective magnetic offset flux density B ₀ to the respective crystal all axis of the respective crystal or the respective diamond or the respective HD-NV diamond of the respective quantum technological device.

The n identical quantum technological devices of the series production preferably each comprise a respective alignment device for the respective crystal or for the respective diamond or for the respective HD-NV diamond of the respective quantum technological device.

Such a manufacturing method then gives as a result a set of n identical quantum technological devices of a series production of m quantum technological devices, each of the n identical quantum technological devices comprising a crystal or a diamond or a HD-NV diamond, by means of a Alignment device for the crystal or for the diamond or for the HD-NV diamond is at least temporarily aligned or has been aligned. In this case, the time of the alignment is preferably the period of time, a point in time or a period of time during the production of the respective quantum technological device. However, it is also conceivable that the alignment device is part of the quantum technological device and the quantum technological device only determines or calculates alignment parameters during operation or retrieves alignment parameters from a memory or otherwise generates or retrieves them and uses these alignment parameters to set the alignment device so that only then sets the desired precision of the alignment of the crystal or the diamond or the HD-NV diamond in relation to the magnetic field.

Group XII manufacturing processes with magnet alignment and with Cpk>1.66

Bezogen auf den Kippwinkelbereich bedeutet das: $${\text{C}}_{\text{pk}}=\left[\text{Minimum}\left(\mathrm{\mu +}\left|\text{Kippwinkelbereich}\right|\text{;Kippwinkelbereich}-\mathrm{\mu }\right)\right]/\left(3*\mathrm{\sigma }\right)$$

In an analogous manner, as already mentioned, a magnetic field-generating device can also align the magnetic field with respect to the crystal or the diamond or the HD-NV diamond with the aid of the fluorescence characteristics. A series production using such a method then results in a set of n identical quantum technological devices of a series production of m quantum technological devices as a result of the method. Again, the base number n of the sample of n quantum technological devices should be greater than 10 and/or better than 20 and/or preferably greater than 50 and/or better greater than 100 and/or better greater than 200 and/or better greater than 500 and/or better greater than 1000 and/or better greater than 2000 and/or better greater than 5000. The total size m of the total population is an integer greater than or equal to n. Each of the quantum technological devices then preferably has a magnetic field generating device. Each of the magnetic field generating devices can generate a magnetic field with a respective flux density B and a respective magnetic field direction. Each of the quantum technological devices again has a crystal or a diamond or an HD-NV diamond. The respective crystal or diamond or HD-NV diamond of each of the quantum technological devices has a crystal direction. The respective crystals of the respective quantum technological devices preferably have one or more paramagnetic centers (NV1, NV2) or one or more pairs of paramagnetic centers or one or more NV centers or one or more coupled pairs of NV centers or one or more SiV centers or one or more coupled pairs of SiV centers or one or more GeV centers or one or more coupled pairs of GeV centers or one or more ST1 centers or one or more coupled ST1s center pairs or one or more TR12 centers or one or more coupled TR12 center pairs or a single crystal or a diamond or an HD-NV diamond or an HD-NV diamond region. This respective crystal direction of the respective crystal of the respective quantum technological device is typically tilted by a respective tilt angle relative to the respective magnetic field direction when a magnetic field is generated by the respective magnetic field generating device of this respective quantum technological device, wherein the tilt angle can be 0°. The respective tilt angles of the respective device of the n quantum technological devices typically differ from one another at least in part, in particular during operation, by a tilt angle range of no more than +/-10° and/or better by no more than +/-5° and/or better by no more than +/-2° and/or better by no more than +/-1° and/or better by no more than +/-0.5° and/or better by no more than +/-0, 2° and/or better by no more than +/-0.1° and/or better by no more than +/-0.05° and/or better by no more than +/-0.02° and/or better by no more than +/-0.01° and/or better by no more than +/-0.005° and/or better by no more than +/-0.002° and/or better by no more than +/-0.001° on the respective magnetic field direction of the respective device. The mean value of the tilt angles is µ here. In this case, these tilt angles have a scattering σ of the tilt angles. An important variable in production is the C _pk value of a parameter. According to the general teaching of the state of the art for calculating the Cpk value, the C _pk value is then obtained as $${\text{C}}_{\text{pk}}=\left[\text{minimum}\left(\mathrm{\mu -}\text{lower stop limit; upper stop limit}\right)\right]/\left(3*\mathrm{\sigma }\right)$$

In relation to the tilting angle range, this means: $${\text{C}}_{\text{pk}}=\left[\text{minimum}\left(\mathrm{\mu +}\left|\text{tilt angle range}\right|\text{;Tilt angle range}-\mathrm{\mu }\right)\right]/\left(3*\mathrm{\sigma }\right)$$

As a result, the C _pk value of the tilt angles of these n devices at these times is related to the tilt angle interval of +/-10° and/or better +/-5° and/or better +/-2° and/or better +/- 1° and/or better than +/-0.5° and/or better than +/-0.2° and/or better than +/-0.1 and/or better than +/-0.05° and/or better than + /-0.02° and/or better +/-0.01 and/or better +/-0.005° and/or better +/-0.002° and/or better +/-0.001 in each case based on the respective magnetic field directions of the respective Device of the n same quantum technological devices better than 1.66.

Group XIII Manufacturing process with goniometer (MEMSG)

• • Bereitstellen eines Open-Cavity-Gehäuses mit einer Montageöffnung;
• • Bereitstellen eines Einkreisgoniometers oder eines Zweikreisgoniometers (MEMSG) oder eines Dreikreisgoniometers, im Folgenden als Goniometer bezeichnet;
• • Bereitstellen eines Kristalls (HDNV),
• • Einbringen des Goniometers (MEMSG) in das Gehäuse über die Montageöffnung;
• • Anbringen des Kristalls auf dem Goniometer (MEMSG), beispielsweise mittels eines Klebers oder dergleichen;
• • Elektrischer Anschluss des Goniometers (MEMSG) mittels Bonddrähten (BO) über elektrische Anschlüsse (AN) des Gehäuses (GH);
• • Vorzugsweise elektrisches Kontaktieren der elektrischen Anschlüsse (AN) des Gehäuses (GH) und damit der elektrischen Anschlüsse des Goniometers (MEMSG);
• • Ausrichten des Kristalls (HDNV) mit Hilfe des Goniometers (MEMSG) beispielsweise durch entsprechende elektrische Signalisierungen an das Goniometer (MEMSG), sodass der Kristall (HDNV) nach der Ausrichtung eine Ausrichtungsorientierung aufweist;
• • Verschließen des Gehäuses (GH) mit einem Deckel (DE).

Based on the explanations described above, the text presented here proposes a method for producing a quantum measurement system and/or a quantum technological device, which comprises the following steps, for example:

• • providing an open cavity package with a mounting hole;
• • Providing a single-circle goniometer or a double-circle goniometer (MEMSG) or a triple-circle goniometer, hereinafter referred to as goniometer;
• • Providing a crystal (HDNV),
• • Insertion of the goniometer (MEMSG) into the housing via the mounting opening;
• • attaching the crystal to the goniometer (MEMSG), for example by means of an adhesive or the like;
• • Electrical connection of the goniometer (MEMSG) using bonding wires (BO) via electrical connections (AN) of the housing (GH);
• • Preferably electrical contacting of the electrical connections (AN) of the housing (GH) and thus the electrical connections of the goniometer (MEMSG);
• • aligning the crystal (HDNV) with the help of the goniometer (MEMSG), for example by appropriate electrical signaling to the goniometer (MEMSG), so that the crystal (HDNV) has an alignment orientation after the alignment;
• • Closing the housing (GH) with a cover (DE).

In the case of a single-circle goniometer, the goniometer (MEMSG) preferably has a first axis adjustment device for a first goniometer axis. In the case of a dual circuit goniometer (MEMSG), the goniometer (MEMSG) has a first axis adjustment device for a first goniometer axis and a second axis adjustment device for a second goniometer axis. In the case of a three-circle goniometer, the goniometer (MEMSG) has a first axis adjustment device for a first goniometer axis and a second axis adjustment device for a second goniometer axis and a third axis adjustment device for a third goniometer axis. The crystal (HDNV) typically has one or more paramagnetic centers. The crystal (HDNV) can be a diamond crystal, for example. The paramagnetic centers can in particular be NV centers and/or ST1 centers and/or TR12 centers and/or SiV centers and/or GeV centers and/or coupled pairs of NV centers and/or coupled ST1s pairs of centers and/or pairs of coupled TR12 centers and/or pairs of coupled SiV centers and/or pairs of coupled GeV centers and/or pairs of coupled paramagnetic centers. The paramagnetic centers emit fluorescence radiation (FL) when irradiated with pump radiation (LB). The fluorescence radiation (FL) depends on a magnetic flux density B at the location of the paramagnetic centers or the crystal (HDNV) with these paramagnetic centers. The intensity of the fluorescence radiation (FL) exhibits an intensity drop in the intensity of the fluorescence radiation (FL) within a fluorescence feature at a characteristic magnetic flux density B of the fluorescence feature. The time delay in the modulation of the intensity of the fluorescence radiation (FL) compared to the time modulation of the pump radiation (LB) or the modulation of a modulation signal (S5) or a signal derived therefrom shows an increase in the time delay in the intensity of the fluorescence radiation (FL) compared to the temporal modulation of the pump radiation (LB) or the modulation of a modulation signal (S5) or a signal derived therefrom within a fluorescence feature at the characteristic magnetic flux density B of the fluorescence feature. A fluorescence feature is characterized firstly by an extremum of the curve of the intensity of the fluorescence radiation (FL) as a function of the magnitude of the magnetic flux density (B) at the location of the paramagnetic centers and secondly by an extremum of the curve of the time delay of the intensity of the fluorescence radiation ( FL) compared to the temporal modulation of the pump radiation (LB) or the modulation of a modulation signal (S5) or a signal derived therefrom depending on the magnitude of the magnetic flux density (B) at the location of the paramagnetic centers. The fluorescence feature is characterized by the magnitude of the magnetic flux density B at this extremum.;

• • Beststrahlen des Kristalls mit Pumpstrahlung (LB);
• • Erfassen der Fluoreszenzstrahlung (FL);
• • Änderung der Ausrichtung des Kristalls mit Hilfe des Goniometers (MEMSG), bis ein Minimum der Intensität der Fluoreszenzstrahlung (FL) und/oder ein Maximum der Verzögerungszeit einer Modulation der Fluoreszenzstrahlung (FL) gegenüber einer Modulation der Pumpstrahlung (LB) erreicht ist;
• • Beenden der Ausrichtung des Kristalls, wenn dieses Minimum der Intensität der Fluoreszenzstrahlung (FL) und/oder ein Maximum der Verzögerungszeit einer Modulation der Fluoreszenzstrahlung (FL) gegenüber einer Modulation der Pumpstrahlung (LB) erreicht ist und der Kristall dann ausgerichtet ist.

In a development of the method, the proposed device, which carries out the method, exposes the crystal to a magnetic flux density B, with this magnetic flux density B essentially corresponding to a characteristic magnetic flux density B of a fluorescence feature. The method modified in this way also includes the following steps:

• • Best blasting of the crystal with pump radiation (LB);
• • detecting the fluorescence radiation (FL);
• • changing the orientation of the crystal using the goniometer (MEMSG) until a minimum intensity of the fluorescence radiation (FL) and/or a maximum of the delay time of a modulation of the fluorescence radiation (FL) compared to a modulation of the pump radiation (LB) is reached;
• • ending the alignment of the crystal when this minimum of the intensity of the fluorescence radiation (FL) and/or a maximum of the delay time of a modulation of the fluorescence radiation (FL) compared to a modulation of the pump radiation (LB) is reached and the crystal is then aligned.

Since the alignment to observe the fluorescence feature must be extremely precise, this results in a highly accurate alignment of the crystal with respect to the housing.

• • Kalibrieren des Quantenmesssystem und/oder der quantentechnologischen Vorrichtung insbesondere nach einem oder mehreren der vorbeschriebenen Verfahren.

In a further development of the method, the method comprises the steps:

• • Calibration of the quantum measurement system and/or the quantum technological device, in particular according to one or more of the methods described above.

A possible application is then the use of a quantum measuring system and/or a quantum technological device, which has been produced by means of a method described above, as a measuring device for a physical variable that acts on the measuring device or as a quantum computer sub-device.

Group XIV manufacturing process with goniometer (MEMSG) in the housing

• • Bereitstellen eines Kristalls;
• • Ausrichten des Kristalls mit Hilfe eines Einkreisgoniometers oder eines Zweikreisgoniometers (MEMSG) oder eines Dreikreisgoniometers, im Folgenden als Goniometer bezeichnet, sodass der Kristall nach der Ausrichtung eine Ausrichtungsorientierung aufweist;
• • Platzieren und Befestigen des Kristalls in einem Gehäuse wobei die Orientierung des Kristalls im Gehäuse von der Ausrichtungsorientierung abhängt, bevorzugt der Ausrichtungsorientierung entspricht.

Having described the orientation after mounting in the housing in the previous section, the document presented here now describes the orientation of the crystal before mounting. The method modified in this way then comprises the following steps:

• • providing a crystal;
• • aligning the crystal using a single-circle goniometer or a double-circle goniometer (MEMSG) or a triple-circle goniometer, hereinafter referred to as a goniometer, so that the crystal has an alignment orientation after alignment;
• • Placing and fixing the crystal in a case, wherein the orientation of the crystal in the case depends on the alignment orientation, preferably corresponds to the alignment orientation.

The crystal preferably comprises diamond and one or more paramagnetic centers, in particular one or more NV centers and/or one or more ST1 centers and/or one or more TR12 centers and/or one or more SiV centers and/or one or more GeV centers and/or one or more coupled pairs of NV centers and/or one or more coupled pairs of ST1 centers and/or one or more coupled pairs of TR12 centers and/or one or more coupled SiV centers pairs of centers and/or one or more pairs of coupled GeV centers and/or one or more pairs of coupled paramagnetic centers. The paramagnetic centers and/or the crystal emit fluorescence radiation (FL) when irradiated with pump radiation (LB). The fluorescence radiation (FL) depends on a magnetic flux density B at the location of the paramagnetic centers or the crystal with these paramagnetic centers. The intensity of fluorescence radiation (FL) exhibits a drop in intensity of fluorescence radiation (FL) intensity within a fluorescent feature at a characteristic magnetic flux density B . A fluorescence feature within the meaning of this document is then an extremum of the curve of the intensity of the fluorescence radiation (FL) as a function of the amount of the magnetic flux density (B) at the location of the paramagnetic centers, which is characterized by the amount of the characteristic magnetic flux density B at this extremum . The time delay of the modulation of the intensity of the fluorescence radiation (FL) compared to the modulation of the intensity of the pump radiation (LB) or the modulation of the modulation signal (S5) or a signal derived therefrom shows an increase in the time delay of the modulation of the intensity of the fluorescence radiation (FL) versus the modulation of the intensity of the pump radiation (LB) or the modulation of the modulation signal (S5) or a signal derived therefrom within a fluorescence feature at a characteristic magnetic flux density B. A fluorescence feature within the meaning of this document is then an extremum of the curve of the time delay of the modulation of the intensity of the fluorescence radiation (FL) compared to the modulation of the intensity of the pump radiation (LB) or the modulation of the modulation signal (S5) or a signal derived therefrom as a function of the magnitude of the magnetic flux density (B) at the location of the paramagnetic centers or crystal, which is characterized by the magnitude of the characteristic magnetic flux density B at that extremum.

• • Aussetzen des Kristalls einer magnetischen Flussdichte B, wobei diese Magnetische Flussdichte B einer Magnetischen Flussdichte im Wesentlichen einer magnetischen Flussdichte eines Fluoreszenzmerkmals entspricht;
• • Beststrahlen des Kristalls mit Pumpstrahlung (LB);
• • Erfassen der Fluoreszenzstrahlung (FL);
• • Änderung der Ausrichtung des Kristalls mit Hilfe des Goniometers (MEMSG), bis ein Minimum der Intensität der Fluoreszenzstrahlung (FL) und/oder ein Maximum der Verzögerungszeit einer Modulation der Fluoreszenzstrahlung (FL) gegenüber einer Modulation der Pumpstrahlung (LB) oder der Modulation eines Modulationssignals (S6) oder eines daraus abgeleiteten Signals erreicht ist;
• • Beenden der Ausrichtung des Kristalls, wenn dieses Minimum der Intensität der Fluoreszenzstrahlung (FL) und/oder dieses Maximum der Verzögerungszeit einer Modulation der Fluoreszenzstrahlung (FL) gegenüber einer Modulation der Pumpstrahlung (LB) oder der Modulation eines Modulationssignals (S6) oder eines daraus abgeleiteten Signals erreicht ist und der Kristall dann ausgerichtet ist.

A further development of the proposed method includes the following steps:

• • exposing the crystal to a magnetic flux density B, said magnetic flux density B corresponding to a magnetic flux density substantially to a magnetic flux density of a fluorescent feature;
• • Best blasting of the crystal with pump radiation (LB);
• • detecting the fluorescence radiation (FL);
• • Changing the orientation of the crystal using the goniometer (MEMSG) until a minimum of the intensity of the fluorescence radiation (FL) and/or a maximum of the delay time of a modulation of the fluorescence radiation (FL) compared to a modulation of the pump radiation (LB) or the modulation of a modulation signal (S6) or a signal derived therefrom;
• • Ending the alignment of the crystal when this minimum of the intensity of the fluorescence radiation (FL) and/or this maximum of the delay time of a modulation of the fluorescence radiation (FL) compared to a modulation of the pump radiation (LB) or the modulation of a modulation signal (S6) or one of them derived signal is reached and the crystal is then aligned.

Group XV MEMS Goniometers (MEMSG)

The document presented here now proposes a device for a quantum measurement system and/or quantum technological device or a quantum computer with an alignment device for aligning the crystals within the housing. Such a device preferably comprises a MEMS goniometer (MEMSG). This means that the proposed device preferably comprises a micromechanical device that can serve as an alignment device. The device typically further comprises a crystal (HDNV) with paramagnetic centers. The document presented here refers to the above statements in this regard. The proposed MEMS goniometer (MEMSG) is preferably manufactured in a microlithographic process. The basis of the MEMS goniometer (MEMSG) is typically a wafer, on and in which a MEMS manufacturing process of the MEMS goniometer (MEMSG) typically produces a large number of MEMS goniometers (MEMSG) in parallel. The wafer is preferably a semiconductor wafer. The semiconductor wafer is very particularly preferably a silicon or germanium or SiC wafer or a wafer made from a semiconductor material with a direct band transition. The wafer is particularly preferably an SOI wafer (Silicon On Insulator) which is made up of a number of wafers which are connected to one another by one or more insulating layers (OX1, OX2). The wafer particularly preferably comprises a first wafer (Si0), which this document also refers to as a handle wafer (Si0) below. The handle wafer (Si0) is in the example 20 provided with a first insulating layer (OX1). The wafers are preferably monocrystalline. The handle wafer (SiO) is preferably a monocrystalline wafer. The handle wafer (Si0) is, for example, preferably a wafer made from a semiconductor material. The handle wafer (SiO) is, for example, very particularly preferably a silicon wafer. Less preferably, the handle wafer (SiO) is a SiC or a III/V material wafer or the like. A second wafer, the intermediate wafer (Si1) is in the example 20 attached to the surface of the handle wafer (Si0). The intermediate wafer (Si1) is in the example 20 provided with a second insulating layer (OX2). The intermediate wafer (Si1) is preferably a monocrystalline wafer. The intermediate wafer (Si1) is, for example, preferably a wafer made from a semiconductor material. The intermediate wafer (Si1) is, for example, very particularly preferably a silicon wafer. Less preferably, the intermediate wafer (Si1) is a SiC or a III/V material wafer or the like. The intermediate wafer preferably has a thickness of less than 100 μm and/or better less than 50 μm and/or better less than 20 μm and/or better less than 10 μm and/or better less than 5 μm. If the intermediate wafer is too thin, the mechanical stability suffers. If the mass is too large, the mechanical dynamics are reduced because the mass of the first rotating body (Rx) increases. A third wafer, the device wafer (Si2) is in the example 20 fixed on the surface of the intermediate wafer (Si01).

Typically, the first insulation layer (OX1) as a SiO ₂ layer connects the handle wafer (Si0) to the intermediate wafer (Si1). The intermediate wafer (Si1) is therefore typically bonded to the handle wafer (Si0). In part, the first insulating layer (OX1) serves as a sacrificial layer during fabrication of the exemplary MEMS goniometer (MEMSG). A preferably wet-chemical or gas-chemical etching process removes parts of the first insulation layer (OX1) and attacks the other components of the MEMS goniometer (MEMSG) as little as possible or as little as possible. In this way, the manufacturing process produces parts of a first air gap (AG1) that separates a frame (RM) of the MEMS goniometer (MEMSG) from the first rotating body (RX), so that the first rotating body (RX) faces the frame (RM) of the MEMS goniometer (MEMSG) about a first X-axis (AXx) is limited in rotation.

Typically, the second insulation layer (OX2) as a SiO ₂ layer connects the intermediate wafer (Si1) to the device wafer (Si2). The device wafer (Si2) is therefore typically bonded to the intermediate wafer (Si1). In part, the second insulating layer (OX2) serves as a sacrificial layer during fabrication of the exemplary MEMS goniometer (MEMSG). A preferably wet-chemical or gas-chemical etching process removes parts of the second insulation layer (OX2) and attacks the other components of the MEMS goniometer (MEMSG) as little as possible or as little as possible. In this way, the manufacturing process creates parts of a second air gap (AG2) that separates the first rotating body (RX) of the MEMS goniometer (MEMSG) from a second rotating body (RY) such that the second rotating body (RY) rotates about a second axis ( AXy) is restricted in relation to the first rotating body (RX) of the MEMS goniometer (MEMSG) rotatable. The manufacturing process includes steps for etching through the device wafer (S2), the Zwi schen wafers (S1) and the second insulating layer (OX2) to ensure the access of the etchant to the sacrificial layers and the detachment of the rotating bodies (RX, RY) from the frame (RM) or the other rotating body (RX).

The manufacturing process particularly preferably also includes process steps for manufacturing electronic components, wiring and insulation layers and/or insulation structures in or on the wafer. These process steps are preferably process steps of a CMOS, a BiCMOS or a bipolar process or the like. The manufacturing process particularly preferably also produces optical waveguides (LWL1, LWL2). The MEMS goniometer (MEMSG) preferably comprises a reset circuit (RES) as a microelectronic co-integrated circuit. The reset circuitry determines conditions that force the MEMS goniometer (MEMSG) system to reset to a defined state. Such conditions can be, for example, but not limited to, turning on the power supply and/or a software signal from the computer core (CPU) and/or a signal from a watchdog circuit, etc. Furthermore, the MEMS goniometer (MEMSG) preferably includes a clock generator (CLK), which supplies the co-integrated circuit parts of the MEMS goniometer (MEMSG) with one or more system clocks. The co-integrated circuit parts of the MEMS goniometer (MEMSG) preferably also include one or more voltage regulators (SRG1, SRG2, SRG3, SRG4). A charging device (LDV) preferably charges the energy reserve (BENG) with electrical energy. The energy reserve (BENG) is preferably connected to a separating device (TS) by means of bond wires via bond pads of the MEMS goniometer (MEMSG). The disconnecting device may electrically connect the power reserve (BENG) to the charging device (LDV) for charging, or electrically disconnect the power reserve (BENG) from that of the charging device (LDV). The computer core (CPU) preferably controls both the loading device (LDV) and the separating device (TS) via the motor data bus (MDB), for example. The charging device (LDV) is preferably connected to the supply voltage (Vbat) and the reference potential (GND) via the bond pads and bond wires and the corresponding connections of the housing. A first voltage regulator (SR1) draws energy from the energy reserve and generates a first internal supply voltage (Vbait1). Preferably, the first voltage regulator supplies a first motor controller (GDx) for the X-axis of the paramagnetic center diamond alignment device (HDNV) or the HDNV diamond to the paramagnetic center crystal with electrical energy.

The first motor controller (GDx) is preferably co-integrated in the device wafer (Si2). In the example of 17 until 20 the first motor controller (GDx) drives a first electrostatic torsion motor. The first electrostatic torsion motor is preferably a so-called comb drive, here the first X-axis comb drive (=first electrostatic torsion motor for the X-axis [AXx]) (CBDRV1x). Such is for example from the 1a and 1b the WO 2001 073 935 A2 known. The second electrostatic torsion motor is preferably also a so-called comb drive, here the second X-axis comb drive (=second electrostatic torsion motor for the X-axis [AXx]) (CBDRV2x). The third electrostatic torsion motor is preferably also a so-called comb drive, here the first Y-axis comb drive (=first electrostatic torsion motor for the Y-axis [AXy]) (CBDRV1y). The fourth electrostatic torsion motor is preferably also a so-called comb drive, here the second Y-axis comb drive (=second electrostatic torsion motor for the Y-axis [AXy]) (CBDRV2y).

In the examples of 18 until 20 the first X-axis comb drive (CBDRV1x) and the second X-axis comb drive (CBDRV2x) drive the rotational movement of the entirety of the first rotary body (Rx) and the second rotary body (Ry) including the auxiliary units (GDy, CBDRV1y , CBDRV2y), magnetic field generating structures (MG) and crystal, especially HD-NV diamond (HDNV). In the examples of 18 until 20 the first Y-axis comb drive (CBDRV1y) and the second Y-axis comb drive (CBDRV2y) drive the rotational movement of the entirety of the second rotary body (Ry) including the auxiliary units (GDy, CBDRV1y, CBDRV2y), magnetic field generating structures (MG) and Crystal, especially HD-NV Diamond (HDNV). The X axis (AXx) and the Y axis (AXy) are preferably perpendicular to one another. A rotation of the first rotary body (RX) around the X-axis (AXx) in the example also swivels the Y-axis (AXy), the motor drivers (GDy) for the Y-axis Com-Drives (CBDRV1y, CBDRV2y) and the Y-axis com-drives (CBDRV1y, CBDRV2y) as well as the second rotating body (RY) with the magnetic field generating structures (MG), the recess (VT) and the HD-NV diamond (HDNV). A rotation of the second rotating body (RY) around the Y-axis (AXy) in the example only pivots the second rotating body (RY) with the magnetic field generating structures (MG), the depression (VT) and the HD-NV diamond (HDNV) . The computer core (CU) of the MEMS goniometer (MEMSG) presented here as an example communicates via a data bus interface (DBIF) to align a HD-NV diamond (HDNV) with higher-level systems. Furthermore, the control device (STV) of the exemplary MEMS goniometer (MEMSG) preferably has a non-volatile memory (NVM) and preferably a read-write memory (R.A.M). The computer core (CPU) uses the random access memory (RAM) and the non-volatile memory (NVM) to process the programs that can be used, among other things, to control and implement the methods described in this document. The fourth voltage regulator (SR4) preferably supplies the computer core (CPU) and the read/write memory (RAM), the non-volatile memory (NVM) and the data bus interface (DBIF) with electrical energy. The internal engine data bus interface (MBDF) is in the 17 as part of the computer core (CPU) for better clarity 17 not specially marked. The computer core (CPU), the non-volatile memory (NVM), the fourth voltage regulator (SR4), the random access memory (RAM), the data bus interface (DBIF) and the internal motor data bus interface (MBDF) are preferably in the semiconductor material of the frame ( RM) of the proposed MEMS goniometer (MEMSG) co-integrated on and in the surface of the device wafer (Si2). Since these parts of the control device (STV) cannot react so sensitively to voltage fluctuations, the fourth voltage regulator (SR4) may also be provided, which supplies these parts of the MEMS goniometer (MEMSG) with electrical energy, not from the energy reserve (BENG), but to be supplied with electrical energy via the supply voltage line (VBat) and the reference potential line (GND).

As part of the control device (STV), the computer core (CPU) controls the waveform generator (WFG) via the not in 17 drawn motor data bus (MDB) which is part of the proposed MEMS goniometer (MEMSG). A third voltage regulator (SR3) supplies electrical energy to the waveform generator (WFG) and the driver (LDDRV) for the pump radiation source (LD). The waveform generator (WFG) preferably has its own time base in the form of its own clock generator. In the following, the document presented here refers to this as the WFG time base. This WFG time base must be highly accurate in order to ensure precise control of the HD-NV diamond (HDNV) 'or of the crystal (HDNV) with the paramagnetic centers. This WFG time base is preferably based on the electrical signal of an oscillating crystal or a micromechanical oscillating element, for example a cantilever. Typically, the quartz crystal is connected to said WFG time base via the bond pads of the MEMS goniometer (MEMSG) and the bond wires connected to these, as well as the connections of the housing connected to the bond wires. The proposed MEMS goniometer (MEMSG) is thus distinguished by a connected mechanical oscillating element that oscillates with high accuracy at a frequency and supplies an associated electrical and periodic signal. The mechanical oscillating element particularly preferably comprises paramagnetic centers or quantum objects which are brought from a ground state to an excited level by means of possibly further modulated electromagnetic pump radiation, from where they return to the non-excited state after a finite time with emission. The control circuit for generating the modulation of the optionally further modulated electromagnetic pump radiation is set in such a way that the relative number of excited paramagnetic centers or quantum objects in the excited state is maximized. This relative number of excited paramagnetic centers or quantum objects in the excited state is at a maximum when the frequency of the modulation, possibly further modulated electromagnetic pump radiation, exactly matches the excitation frequency of the transition of the paramagnetic center from the ground state to the excited state. For example, a ¹³³ Cs isotope can be a suitable quantum object for such a frequency base. A controller determines the relative number of excited paramagnetic centers or quantum objects in the excited state. If the relative number of excited paramagnetic centers or quantum objects in the excited state is not maximum or if it does not correspond to a required threshold value or does not exceed it, a controller adjusts the excitation frequency accordingly. This excitation frequency can then be the basis of the WFG time base. The document presented here thus proposes the coupling of a device for controlling paramagnetic centers, in particular NV centers in diamond, with an atomic clock as a time base in order to be able to generate precise control signals. In the present example, such an exemplary embodiment of the device for controlling paramagnetic centers includes the atomic clock, which serves as a frequency standard and supplies a frequency signal as a reference frequency, the WFG time base, which adapts this reference signal to the requirements of the waveform generator (WFG) and the base clock for the Waveform generator (WFG) provides the waveform generator which, on this basis, provides the control signals for driving the paramagnetic centers of the crystal (HDNV). These control signals of the waveform generator (WFG) can be, for example, the modulation signal (S5) for the pump radiation source (LD). These control signals from the waveform generator (WFG) can also be microwave signals, for example, which have an additional effect on the paramagnetic centers of the crystal (HDNV) by means of antennas. The waveform generator (WFG) generates the control signals and/or the modulation signal (S5) depending on the base clock of the WFG time base and on settings that the computer core (CPU) sends to the waveform generator (WFG) using registers of the waveform generator (WFG) via the motor data bus (MDB) makes. The modulation signal (S5) is preferably a pulse-modulated signal. These antennas are preferably also located on the second body of revolution (Ry) near the paramagnetic centers of the crystal (HDNV), so that they can irradiate them well with microwave radiation. The pump radiation source (LD) can be a discretely constructed LED or laser diode, for example, which the driver (LDDRV) of the pump radiation source (LD) supplies with electrical energy as a function of the modulation signal (S5) of the waveform generator (WFG). The pump radiation source (LD) is particularly preferably a silicon LED. The pump radiation source is very particularly preferably a silicon avalanche LED. We refer here to the four writings Sergey Gaponenko, Lorenzo Pavesi, Luca Dal Negro, "Towards the First Silicon Laser (NATO Science Series II: Mathematics, Physics and Chemistry, 93, Band 93)"Springer; 1st edition 2003 (13 Jun. 2008), ISBN-10 : 1402011946 and Motoichi Ohtsu, "Silicon Light-Emitting Diodes and Lasers: Photon Breeding Devices using Dressed Photons (Nano-Optics and Nanophotonics)"Springer; 1st Edition 2016 edition (12 Jun. 2018), ISBN-10: 3319824791 and Ozdal Boyraz, Qiancheng Zhao, "Silicon Photonics Bloom" Mdpi AG (27 Aug. 2020) ISBN-10 : 3039369083 and WO 2020 239 172 A1 (PCT / DE 2020 / 100 430 ).

The pump radiation source (LD) is optionally coupled to an optical filter that suitably limits the spectrum of the pump radiation wavelength (λ _pmp ) of the pump radiation (LB) that the pump radiation source (LD) feeds into a first optical waveguide (LWL1). In particular, the pump radiation (LB), which the pump radiation source (LD) feeds into the first waveguide (LWL1) or which irradiates the crystal (HDNV) with pump radiation (LB), should essentially not have any radiation with the fluorescence wavelength (λ _fl ) of the fluorescence radiation (FL) of the paramagnetic centers of the crystal (HDNV). This optical filter can be, for example, a Bragg filter or a photonic crystal or the like. The pump radiation source (LD) is preferably designed in such a way that it essentially does not emit any radiation of the fluorescence radiation wavelength (λ _fl ) of the fluorescence radiation (FL). The pump radiation source (LD) is therefore preferably a laser. The manufacturing process produces the first optical waveguide (LWL1) preferably as a micro-optical functional element on or in the surface of the device wafer (Si2). For example, it can be an oxide strip that is produced, for example, on the surface of the device wafer by means of etching. The document presented here refers, for example, to Karl-Heinz Brenner, “Microoptics: From Technology to Applications (Springer Series in Optical Sciences) (Springer Series in Optical Sciences, 97, Band 97)”, Springer; first edition 2004 edition (14 Mar. 2012), ISBN-10: 1441919317 and WO 2020 239 172 A1 (PCT / DE 2020 / 100 430 ).

u.u. the third voltage regulator (SR3) consists of several voltage regulators. Most preferably, each of the voltage regulators supplies the waveform generator (WFG) and the driver (LDDRV) for the pump radiation source (LD) separately. This has the advantage that crosstalk between circuit parts via the supply voltage lines is reduced. These voltage regulators each have their own energy reserve (BENG). Thus, then, the proposed MEMS goniometer (MEMSG) comprises multiple energy reserves (BENG). The charging device (LDV) charges these energy reserves in said second time periods. However, when carrying out the quantum operations using the paramagnetic centers of the crystal (HDNV) during the first time periods, these energy reserves (BENG) are separated from the respective loading devices (LDV) by means of corresponding separation devices (TS). In these first periods of time, these energy reserves (BENG) supply the associated circuit parts of the waveform generator (WFG) and the driver (LDDRV) of the pump radiation source (LD) with electrical energy via a respective voltage regulator of the third voltage regulator (SR3). The voltage regulators of the third voltage regulator are preferably all or partially differential, so that they regulate not only the positive supply voltage but also the ground line. This prevents transients from being transmitted through the ground wire.

The first optical waveguide (LWL1) can, for example, via the first bearing or the first spring (GR1x) of the first X-axis (AXx), the first rotary body (Rx), the first bearing or the first spring (GR1y) of the second Y-axis (AXy) on the second rotating body (Ry) be performed. There, for example, the pump radiation emerges from the first optical waveguide (LWL1) and irradiates the crystal (HDNV) with the paramagnetic centers after it has been assembled.

In the example of 17 a second optical waveguide (LWL2) detects at least part of the fluorescence radiation (FL) emitted by the crystal (HDNV) with the paramagnetic centers depending on the pump radiation (LB) and other physical parameters. The second optical fiber (LWL2) can, for example, via the second bearing or the second spring (GR2x) of the first X-axis (AXx), the first rotary body (Rx), the second bearing or the second spring (GR2y) of the second Y-axis (AXy) on the second rotating body (Ry) be performed.

The manufacturing method preferably produces the exemplary second optical waveguide (LWL2) together with the first optical waveguide (LWL1) using the same process steps.

The second optical waveguide (LWL2) transports this part of the fluorescence radiation (FL) to an optical filter (F1). The optical filter (F1) is preferably essentially non-transparent for radiation with the pump radiation wavelength (λ _pmp ) of the pump radiation (LB) of the pump radiation source (LD). The optical filter (F1) is preferably essentially transparent for radiation with the fluorescence radiation wavelength (λ _fl ) of the fluorescence radiation (FL) of the crystal (HDNV) and its paramagnetic centers. As a result, essentially preferably only radiation with the fluorescence wavelength (λ _fl ) reaches the radiation detector (PD). In particular, the radiation detector (PD) converts the intensity of the fluorescence radiation (FL) into a received signal (S0). A screen, for example a radiation-impermeable lacquer layer (BD) or another radiation-proof cover, preferably protects the optical filter (F1) and the photodetector (PD) from scattered light. In the example of 17 an amplifier (AMP) amplifies the received signal (S0) to form an amplified received signal (S1). If necessary, the amplifier (AMP) also works as a filter, for example as a bandpass filter, which essentially only allows the frequencies of the modulation signal (S5) to pass. In the example of 17 a lock-in amplifier (LIA) or a synchronous demodulator or a matched filter or another estimation filter detects the value of the component of the modulation signal (S5) or a signal derived from it in the amplified received signal (S1) and forms a filter output signal (S4) or a Value which corresponds to the preferred amplitude component of the modulation signal (S5) in the amplified received signal (S1). Alternatively or in parallel, in the example 17 the lock-in amplifier (LIA) or the synchronous demodulator or a matched filter or the other estimation filter detects the value of the delay of said component of the modulation signal (S5) or a signal derived from it in the amplified received signal (S1) compared to the modulation signal (S5 ) and generate a delay value signal (S4') or another value which preferably corresponds in value to this time delay of the portion of the modulation signal (S5) in the amplified received signal (S1) compared to the modulation signal (S5). A second voltage regulator (SR2) preferably supplies the amplifier (AMP) and the lock-in amplifier (LIA) or the synchronous demodulator or the matched filter or the other estimation filter with electrical energy. The energy reserve supplies the second voltage regulator (SR2) with energy in the said first time periods, while in the second time periods the charging device (LDV) preferentially supplies the second voltage regulator (SR2) with energy. The computer core (CPU) preferably controls the amplifier (AMP) and the lock-in amplifier (LIA) or the synchronous demodulator or the matched filter or the other estimation filter.

The charging device (LDV) charges the external energy reserve (BENG) via the disconnecting device (TS) and the interface (BENGIF) for connecting the external energy reserve (BENG) in said second time periods.

The MEMS goniometer (MEMSG) manufactured in this way thus preferably comprises, as described, a frame (RM) made from a frame material, ie for example from monocrystalline silicon.

The MEMS goniometer (MEMSG) preferably comprises one or more first actuators (CBDRV1x, CBDRV2x). These actuators can be, for example, a first so-called comb drive (CBDRV1x), which can drive a torsional movement about a first X-axis (AXx) by means of electrostatic forces, and a second so-called comb drive (CBDRV2x), which can drive a torsional movement around the first X-axis (AXx) by means of electrostatic forces.

The MEMS goniometer (MEMSG) preferably comprises one or more second actuators (CBDRV1y, CBDRV2y). These second actuators can be, for example, a first so-called comb drive (CBDRV1y), which can drive a torsional movement about a second Y-axis (AXy) by means of electrostatic forces, and a second so-called comb drive (CBDRV2y). , which can drive a torsional movement around the second Y-axis (AXy) by means of electrostatic forces.

The first X-axis (AXx) and the second Y-axis (AXy) are preferably not parallel. The first X-axis (AXx) and the second Y-axis (AXy) are preferably oriented perpendicular to one another. The first X axis (AXx) is preferably oriented parallel to the surface of the MEMS goniometer (MEMSG), which preferably forms the surface of the device wafer (Si2). The second Y axis (AXy) is preferably oriented parallel to the surface of the MEMS goniometer (MEMSG), which preferably forms the surface of the device wafer (Si2). The MEMS goniometer (MEMSG) can have a third Z-actuator if required. This third Z-actuator can be, for example, a third so-called comb drive (CBDRV1z), which uses electrostatic forces to create a rotational movement about a third Z-axis (AXz), which is perpendicular to the surface of the MEMS goniometer (MEMSG). can, can drive. The third Z-actuator can typically drive the rotational movement around the third Z-axis (AXz) by means of electrostatic forces. The MEMS goniometer (MEMSG) preferably has a bearing that is rotatable about the first X axis (AXx). th first rotating body (Rx). This first rotary body (Rx) is connected to the frame (RM) rotatably about the first X-axis (AXx) by means of a first bearing or spring (GR1x) of the first X-axis (AXx). Very particularly preferably, this first rotating body (Rx) is additionally connected to the frame (RM) rotatably about the first X-axis (AXx) by means of a second bearing or a second spring (GR2x) of the first X-axis (AXx). These first actuators (CBDRV1x, CBDRV1y) can rotate the first rotary body (Rx) about the first X axis (AXx) relative to the frame (RM) about the first X axis (AXx). The crystal (HDNV) with the paramagnetic centers is mechanically firmly connected to the first rotating body (RX) preferably via the second rotating body (Ry) and possibly a third rotating body (Rz) that is not shown. The crystal (HDNV) preferably comprises at least one paramagnetic center and/or more paramagnetic centers and/or a pair of paramagnetic centers and/or a plurality of pairs of paramagnetic centers and/or one or more paramagnetic centers attached to nuclear spins of atoms in the vicinity of these paramagnetic centers, and/or one or more pairs of paramagnetic centers that are coupleable to nuclear spins of atoms in the vicinity of these pairs of paramagnetic centers.

In a development, the crystal (HDNV) comprises a diamond crystal, the diamond crystal (HDNV) having one or more paramagnetic centers, in particular one or more NV centers and/or one or more ST1 centers and/or one or more TR12 centers and/or one or more SiV centers and/or one or more GeV centers and/or one or more coupled NV center pairs and/or one or more coupled ST1 center pairs and/or one or more coupled TR12 centers -center pairs and/or one or more SiV center pairs and/or one or more GeV center pairs and/or one or more pairs of coupled paramagnetic centers.

In a further development, the MEMS goniometer (MEMSG) has one or more second actuators (CBDRV1y, CBDRV2y). In this case, the MEMS goniometer (MEMSG) preferably has a second rotary body (Ry) which is mounted such that it can rotate about a second Y axis (AXy). The second rotating body (Ry) is preferably opposed to the first rotating body by means of a second Y-axis (AXy) first bearing or spring (GR1y) and a second Y-axis (AXy) second bearing or spring (GR2y). (Rx) rotatable about the second Y-axis (AXy) and with the first rotary body (Rx) by means of a first bearing or spring (GR1y) of the second Y-axis (AXy) and a second bearing or spring (GR2y ) of the second Y-axis (AXy) preferably mechanically firmly connected. The second actuators (CBDRV1y, CBDRV2y) can preferably twist the second rotary body (Ry) about the second Y axis (AXy) relative to the first rotary body (Rx). In this case, the crystal (HDNV) is preferably mechanically firmly connected to the second rotary body (Ry). The crystal (HDNV) is preferably particularly preferably mechanically firmly connected to the first rotary body (RX) via the second rotary body (Ry) by means of adhesive bonding. The crystal (HDNV) is preferably mechanically firmly connected to the frame (RM) via the first rotary body (RX) and via the second rotary body (Ry).

In a further development, the MEMS goniometer (MEMSG) has one or more third actuators (CBDRV1z, CBDRV2z). In this case, the MEMS goniometer (MEMSG) preferably has a third rotating body (Rz) mounted so that it can rotate about a third axis (AXz). In that case, the third rotary body (Rz) is preferably connected to the second rotary body ( Ry) rotatable about the third axis (AXz). In this case, preferably third actuators (CBDRV1z, CBDRV2z) can twist the third rotary body (Rz) about the third axis (AXz) in relation to the second rotary body (Ry) about the third axis (AXz). In this case, the crystal (HDNV) is instead preferably mechanically firmly connected to the third rotary body (Rz) and not directly to the second rotary body (Ry). However, the crystal (HDNV) is mechanically fixed indirectly to the second rotating body (Ry) via the third rotating body (Rz), since the third rotating body (Rz) is fixedly and rotatably connected to the second rotating body (Ry) preferentially. The crystal (HDNV) is then also mechanically fixed and rotatably connected to the first rotating body (RX) via the second rotating body (Ry) and via the third rotating body (Rz). Ultimately, the crystal (HDNV) is thus preferably again mechanically fixed to the frame (RM) via the first rotating body (RX) and via the second rotating body (Ry) and via the third rotating body (Rz) and rotatably connected about three axes.

After the wafer manufacturing process has been carried out, a so-called sawing process then separates the MEMS goniometers (MEMSG), which were still combined in the wafer assembly during the manufacturing process, into individual MEMS goniometers (MEMSG). An assembly process then glues or solders these isolated MEMS goniometers (MEMSG) to a mounting surface of a leadframe of a housing (GH) using an adhesive or a solder. The housing is preferably an open-cavity Housing. The document presented here refers to the international application WO 2021 013 308 A1 (PCT/ DE2020/100 648 ), the disclosure content of which is a complete part of the disclosure presented here, to the extent permitted by the respective national law.

Group XVI (magnetic field sensor with flux density control on fluorescence feature)

The paper presented here now proposes using the fluorescence feature for a microwave-free sensor system. From the technical teaching of the writings in the list of cited writings and in particular from the WO 2020 089 465 A2 and the WO 2021151429 A2 a regulation is already known. However, the control is now preferably carried out in such a way that the magnetic field components are controlled from zero perpendicular to the alignment axis of the crystal (HDNV), ie perpendicular to the direction of the paramagnetic centers. This is not described in the above documents. This is only the case if the control is based on a fluorescence feature. The fluorescence intensity curve has minima and maxima, of which the fluorescence characteristics depend very strongly on the crystal orientation in relation to the magnetic field, while the extremes of the fluorescence intensity curve, which are not fluorescence characteristics within the meaning of this document, do not or only to a very small extent depend on the orientation of the crystal (HDNV) versus the direction of magnetic flux density. The writings WO 2020 089 465 A2 and the WO 2021 151 429 A2 do not mention this as a rule principle. The document presented here reveals this for the first time as a control principle.

The document presented here therefore discloses a sensor system with a crystal (HDNV), a waveform generator (WFG), a driver device (LDDRV), a pump radiation source (LD), a photodetector (PD), an evaluation device (AMP, LIA), a controller ( RG), magnetic field generating structures (MG) and/or one or more magnetic field generator coils (MGx, MGy, MGz) for generating a magnetic flux density B. The crystal again includes a paramagnetic center and/or more paramagnetic centers and/or one or more clusters paramagnetic centers and/or a pair of coupled paramagnetic centers and/or several pairs of coupled paramagnetic centers and/or clusters of pairs of coupled paramagnetic centers. The paramagnetic centers can in particular comprise NV centers in diamond as the crystal material of the crystal and/or in particular SiV centers in diamond as the crystal material of the crystal and/or in particular GeV centers in diamond as the crystal material of the crystal and/or in particular TR12 centers in diamond as the crystal material of the crystal and/or in particular ST1 centers in diamond as the crystal material of the crystal.

The waveform generator (WFG) generates a modulation signal (S5) with a time modulation. The driver device (LDDRV) supplies the pump radiation source (LD) with electrical energy as a function of the modulation signal (S5). The pump radiation source (LD) irradiates the crystal (HDNV) with pump radiation (LB) with a pump radiation wavelength (λ _pmp ). The crystal (HDNV) emits fluorescence radiation (FL) with a fluorescence radiation wavelength (λ _fl ) in dependence on the pump radiation (LB). The fluorescence radiation (FL) can depend on a physical parameter at the location of the crystal (HDNV), which can be reflected in the measured values. The fluorescence radiation (FL) typically depends on the strength of the magnetic flux density B at the crystal location (HDNV). In addition, typically the fluorescence emission (FL) depends on the orientation of the crystal (HDNV) relative to the direction of the magnetic flux density B. The crystal (HDNV) is typically arranged and oriented with respect to the direction of the magnetic flux density such that its fluorescence intensity curve of the intensity of the fluorescence radiation (FL) versus the value of the magnetic flux density B shows a fluorescent feature. The crystal (HDNV) is typically arranged and oriented relative to the direction of the magnetic flux density such that its fluorescence delay curve corresponds to the time delay of the modulation of the intensity of the fluorescence radiation (FL) versus the time modulation of the intensity of the pump radiation (LB) or versus the time modulation of the Modulation signal or a signal derived therefrom depending on the value of the magnetic flux density B shows a fluorescence feature. The photodetector (PD) converts at least part of the fluorescence radiation (FL) into a received signal (S0). The evaluation device (AMP, LIA) forms a value or a time course of values from the received signal (S0). For this purpose, the amplifier (AMP) preferably amplifies the received signal (S0) to form the amplified received signal (S1). An exemplary lock-in amplifier determines the proportion of the modulation of the modulation signal (S5) in the amplified received signal (S1) and forms a value or time-dependent value profile from the amplified received signal (S1). The controller (RG) depends on the value or time Value curve, which the evaluation device forms, controls the magnetic field generating structures (MG) and/or the one magnetic field generator coil or the several magnetic field generator coils (MGx, MGy, MGz) for the generation of a magnetic flux density B by means of a control signal in such a way that it generates a total magnetic flux density B am Generate the location of the crystal by means of superimposition in such a way that the mag magnetic flux density B at the crystal site (HDNV) corresponds to the characteristic magnetic flux density B of a fluorescent feature. The sensor system typically uses the control signal or a signal derived from the control signal or a signal from which the control signal is derived as the measured value signal. The sensor system preferably outputs at least one value of the measured value signal or a measured value sequence or the like or keeps it ready.

In a development of the sensor system, the fluorescence intensity curve or the fluorescence delay curve has at least one main fluorescence feature as a fluorescence feature. In the development proposed here, the crystal (HDNV) includes isotopes. In the case of a diamond, particularly in the case of an HD-NV diamond, the diamond preferably comprises ¹³ C isotopes ( ¹³ C). The isotopes ( ¹³ C) preferably have a nuclear spin with a magnetic moment µ. These isotopes ( ¹³ C) now interact with the paramagnetic centers of the crystal in such a way that the interaction of the isotopes ( ¹³ C) with the paramagnetic centers leads to the formation of minor fluorescent features alongside the main fluorescent feature. The technical teaching of the development presented here is characterized in that the sensor system at least temporarily uses one of the secondary fluorescence characteristics as a fluorescence characteristic, for example for the regulation.

Group XVII (magnetic field sensor with alignment control on fluorescence feature)

In the previous section, this publication dealt with a sensor system with a regulation of the orientation of the flux density B of the magnetic field at the location of the crystal (HDNV). So, in the previous section, the sensor system adjusted the alignment of the magnetic field to the crystal direction. A fluorescence feature served as an anchor for the regulation, to which the sensor system aligns the orientation of the magnetic field. The sensor system could then use the value of the corresponding control parameter as a measure of a tilting of the external magnetic field relative to the crystal or as a measure of a tilting of the sensor system relative to the external magnetic field. The document presented here deals with a sensor system that does not readjust the magnetic field, but rather the alignment of the crystal. For this purpose, the sensor system preferably includes means to change and readjust the orientation of the crystal (HDNV) relative to the housing (GH) and thus relative to an external magnetic field with a direction of an external flux density B. The proposal includes a sensor system with a crystal (HDNV), a waveform generator (WFG), a driver device (LDDRV), a pump radiation source (LD), a photodetector (PD), an evaluation device (AMP, LIA), a controller (RG) , Magnetic field generating structures (MG) and/or one or more magnetic field generator coils (MGx, MGy, MGz) and an alignment device (MEMSG). The one or more magnetic field generator coils (MGx, MGy, MGz) are used to generate an additional magnetic flux density B. This additional magnetic flux density B, together with an externally applied magnetic flux density B, generates a total flux density B and an overall direction of the total magnetic flux density B at the location of the crystal (HDNV). The crystal (HDNV) preferably comprises one paramagnetic center and/or more paramagnetic centers and/or one or more clusters of paramagnetic centers and/or one pair of coupled paramagnetic centers and/or more pairs of coupled paramagnetic centers and/or one or more clusters of pairs coupled paramagnetic centers. The paramagnetic centers can include in particular NV centers in diamond as the crystal material of the crystal and/or in particular SiV centers in diamond as the crystal material of the crystal and/or in particular GeV centers in diamond as the crystal material of the crystal and/or in particular ST1 centers in diamond as the crystal material of the crystal and/or in particular TR12 centers in diamond as the crystal material of the crystal. NV centers are particularly preferred as paramagnetic centers. The waveform generator (WFG) typically generates a modulation signal (S5) with a temporal modulation. The modulation is preferably a pulse modulation, as has already been stated several times in this document. The driver device (LDDRV) supplies the pump radiation source (LD) with electrical energy, preferably as a function of the modulation signal (S5). The energy supply to the pump radiation source (LD) is therefore preferably pulse-modulated. The pump radiation source (LD) irradiates the crystal (HDNV) with pump radiation (LB) with a pump radiation wavelength (λ _pmp ). The crystal (HDNV) emits fluorescence radiation (FL) with a fluorescence radiation wavelength (λ _fl ) in dependence on the pump radiation (LB). The fluorescence radiation (FL) can depend on a physical parameter at the crystal location (HDNV). These physical parameters can be, for example, but not limited to the following parameters: The magnetic flux density B, the direction of the magnetic flux density relative to the crystal orientation, the angular velocity of a rotation of the crystal around one or more of the three possible rotational axes of the crystal (HDNV ), the associated angular accelerations around these axes, elements of the mechanical stress tensor within the crystal, in particular shear and torsional stresses of the crystal (HDNV), the location of the crystal (typically relative to a reference location), the velocity of the crystal, the acceleration of the crystal, the electric field strength E and its derivatives over time, the electric flux density D and its derivatives over time, the value of the dielectric constant ε _r and its derivatives over time, the value of the permeability number µ _r and its derivatives over time, the magnetic excitation and its time derivatives, an electric current I or the value of an electric current density J in the vicinity of the crystal, the temperature ϑ of the crystal, a level of intensity of ionizing radiation. Typically, these parameters more or less affect the electronic state of the crystal. This is expressed in the intensity of the fluorescence radiation (FL) and/or the time delay in the modulation of the fluorescence radiation (FL) compared to a modulation of the pump radiation (LB) or a modulation of the modulation signal (S5) or a signal derived therefrom or associated therewith. In practically every case, the fluorescence radiation (FL) depends on the strength of the magnetic flux density B at the crystal location (HDNV). In addition, the fluorescence emission (FL) depends on the orientation of the crystal (HDNV) relative to the direction of the magnetic flux density B. All fluorescence features in the fluorescence intensity curve or the fluorescence retardation curve as a function of the magnetic flux density B can only be observed if the crystal is aligned with high precision and there is a high density of paramagnetic centers in the crystal (HDNV). We now assume for the development discussed here that the crystal (HDNV) is already aligned with respect to the direction of the magnetic flux density in such a way that its fluorescence intensity curve of the intensity of the fluorescence radiation (FL) as a function of the value of the magnetic flux density B and/or its Fluorescence delay curve of the time delay of the modulation of the intensity of the fluorescence radiation (FL) versus the time modulation of the intensity of the pump radiation (LB) or versus the time modulation of the modulation signal or a signal derived therefrom as a function of the value of the magnetic flux density B already one or more fluorescence features indicates. The document presented here has already listed possible fluorescence features several times. We therefore refrain from repeating what was written here. The photodetector (PD) again converts at least part of the fluorescence radiation (FL) into a received signal (S0). The evaluation device (AMP, LIA) then preferably forms a value or a value profile over time from the received signal (S0). The magnetic field generating structures (MG) and/or the one magnetic field generator coil or the several magnetic field generator coils (MGx, MGy, MGz) generate a total magnetic flux density B at the location of the crystal by superimposing an additional magnetic flux density B with an external magnetic flux density B. This happens in such a way that the total magnetic flux density B at the location of the crystal (HDNV) corresponds to the characteristic magnetic flux density B of a fluorescence feature. The controller (RG) forms one or more control signals as a function of the value or value curve over time that the evaluation device (AMP, LIA) forms. This one control signal or these control signals control the alignment device (MEMSG) in such a way that the direction of the magnetic flux density B at the location of the crystal (HDNV) is oriented in relation to the direction of the paramagnetic centers or of the crystal (HDNV) that the fluorescence intensity curve and/or the fluorescence delay curve express at least one, preferably several fluorescence features. The regulator (RG) preferably regulates the orientation in such a way that the expression of the fluorescence feature is extremal. This means that the relevant fluorescence value should be maximum when the relevant value of the relevant fluorescent feature is a maximum within the fluorescent feature and that the relevant fluorescence value should be minimum when the relevant value of the relevant fluorescent feature is a minimum within the fluorescent feature. In the event of a change in the orientation of the magnetic field relative to the crystal, the controller (RG) adjusts the alignment device (MEMSG) in such a way that this alignment device (MEMSG) reorients the crystal (HDNV) in such a way that its original alignment with respect to the direction of the magnetic flux density B of the magnetic field is essentially restored. Essentially means that the control and measurement errors of the system should be irrelevant. The sensor system then preferably uses the control signal or signals or a signal derived from the control signal or signals derived from the control signals or a signal from which the control signal is derived or signals from which the control signals are derived as a measured value signal or .measurement signals. The sensor system then preferably outputs at least one value of the measured value signal or at least one value each of the respective measured value signals or keeps them ready.

In a development of the sensor system, the fluorescence intensity curve and/or the fluorescence delay curve has at least one main fluorescence feature as a fluorescence feature. In this development, the crystal (HDNV) preferably comprises isotopes, in particular ¹³ C isotopes ( ¹³ C), the isotopes ( ¹³ C) having a nuclear spin with a magnetic moment μ. These isotopes ( ¹³ C) typically now interact with the crystal paramagnetic centers (HDNV) in such a way that the interaction of the isotopes ( ¹³ C) with the crystal paramagnetic centers (HDNV) leads to the formation of side fluorescent features. According to the proposal, the sensor system now uses at least temporarily one of the secondary fluorescence features as a fluorescence feature, for example for compensation control as described above.

What is special is that the strength of the expression of the fluorescence features depends on the physical parameters and the local density of the paramagnetic centers with different sensitivities. A crystal (HDNV) can therefore also have several areas with a different density of paramagnetic centers, which then have different and above all characteristic sensitivity profiles for the main fluorescence features and the secondary fluorescence features. Therefore, it always makes sense if a sensor system in the sense of the document presented here, for example using its computer core (CPU), evaluates several fluorescence characteristics with possibly different densities of paramagnetic centers and possibly on the basis of the then slightly different values based on different fluorescence characteristics For example, an improved measured value is determined by means of pattern recognition methods. This applies to all of Scripture. We expressly mention this again here, although this document basically assumes that all features combined in this document and the documents cited can be combined with one another if it makes sense and that these combinations are hereby disclosed.

Group XVI (magnetic field sensor)

An essential idea of the paper presented here is to calibrate conventional magnetic field sensors using the fluorescence characteristics of a crystal with one or more paramagnetic centers. The advantages of a quantum sensor, which can determine with very high accuracy that the magnetic flux density corresponds exactly to a characteristic magnetic flux density of one of the fluorescence features described above, preferably complement one another here. On the other hand, such quantum sensors cannot determine any magnetic flux density. If the value of the magnetic flux density B to be detected lies between the values of the characteristic flux densities B of the fluorescence features, the flux density B must be determined differently. The idea now is to combine two different sensor principles. First, the proposed sensor system uses a conventional magnetic field sensor. This can be, for example, a magnetic field sensor based on Hall plates, an AMR sensor, a GMR sensor, an XMR sensor or a quantum sensor with a different measuring principle. The quantum sensor can be, for example, a sensor or a sensor system in accordance with the documents WO 2021151429 A2 , WO 2021 013 308 A1 , DE 10 2014 219 550 A1 , DE 10 2015 016 021 A1 , DE 10 2019 130 480 A1 or DE 10 2019 212 587 A1 . These writings are expressly only examples. Many other writings can be mentioned here.

The document presented here thus describes a sensor system with a conventional magnetic field sensor and with a quantum device. The quantum device differs from the conventional magnetic field sensor in its operating principle. The conventional magnetic field sensor can therefore be a quantum sensor, which should then have a different measuring principle. For example, the conventional magnetic field sensor can be a quantum sensor according to the document WO 2021 013 308 A1 act. The technical teaching of WO 2021 013 308 A1 works with non-aligned magnetic fields and crystals. The technical teaching of the document presented here works with aligned crystals.

The crystal preferably comprises one paramagnetic center and/or multiple paramagnetic centers and/or one or more clusters of paramagnetic centers and/or a pair of coupled paramagnetic centers and/or multiple pairs of coupled paramagnetic centers and/or clusters of pairs of coupled paramagnetic centers. Preferred one or more paramagnetic centers are NV centers in diamond as crystal and/or ST1 centers in diamond as crystal and/or TR12 centers in diamond as crystal and/or SiV centers in diamond as crystal and/or GeV centers in diamond as crystal.

It is quite conceivable that a sensor device both sensor principles, namely that disclosed here and that of WO 2021 013 308 A1 using a shared HD-NV diamond crystal in a sensor device. For example, time-division multiplex operation is conceivable.

In a first period, the sensor system carries out a magnetic field measurement in accordance with the technical teaching disclosed here. For this purpose, the sensor system aligns the diamond crystal serving as the sensor element, for example by means of a MEMS goniometer (MEMSG). If the magnetic field is parallel to the direction of the NV centers and the magnitude of the magnetic flux density B corresponds to the characteristic flux density B of a fluorescent feature, the sensor system can detect a reduction in the intensity of the fluorescence radiation (FL) from the paramagnetic centers of the crystal. If necessary, the sensor system can have multiple alignments of the diamond crystal and/or multiple alignments and flux densities of an additionally superimposed structure (MG) that generates magnetic fields and/or magnetic fields ing coils (MGx, MGy, MGz) and/or similar magnetic fields. The sensor system can also scan the resulting parameter space from different orientations of the crystal, orientations of the magnetic field and/or strengths of the magnetic flux density.

In second time periods, the charging device (LDV) charges the energy reserve (BENG) as described. This second period is not necessary in all versions of the proposal. The time slot method presented here can therefore also only include first and third time periods. Typically, the first periods and the second periods and the third periods do not overlap.

In the third periods of time, the sensor device can specifically destroy the parallelism of the alignment of the magnetic flux density of the magnetic field and the paramagnetic centers in the crystal. For this purpose, the sensor system uses the MEMS goniometer (MEMSG), for example, to direct the crystal (HDNV) serving as the sensor element and/or the direction of the magnetic flux density B of the magnetic field by means of an additionally superimposed magnetic field generating structure (MG) and/or magnetic field generating coil (MGx , MGy, MGz) and/or the like generated magnetic field in such a way that the direction of the paramagnetic centers no longer corresponds to the direction of the flux density B of the resulting overall magnetic field. The sensor system can also less preferably change the strength of the flux density B of the overall magnetic field by means of the additionally superimposed magnetic field generated by magnetic field-generating structures (MG) and/or magnetic field-generating coils (MGx, MGy, MGz) and/or the like so that this strength of the magnetic Flux density B of the overall magnetic field no longer corresponds to the characteristic magnetic flux density B of a fluorescence feature. If the magnetic field is no longer parallel to the direction of the NV centers and/or the magnitude of the magnetic flux density B no longer corresponds to the characteristic flux density B of a fluorescence feature, the sensor system can, for example, use a method in accordance with the technical teaching of the documents mentioned, in particular the WO 2021 013 308 A1 , which determine the magnetic flux density. If necessary, the sensor system can also test several orientations of the crystal and/or several orientations and flux densities of the additionally superimposed magnetic field generated by means of magnetic field generating structures (MG) and/or magnetic field generating coils (MGx, MGy, MGz) and/or the like. The sensor system can also scan the resulting parameter space from different orientations of the crystal, orientations of the magnetic field and/or strengths of the magnetic flux density.

In this case, the sensor system preferably comprises a memory (NVM, RAM) and a computer core (CPU). The memory (NVM, RAM) preferably comprises a non-volatile memory (NVM) and preferably a random access memory (RAM). The computer system (CPU) and the memory (NVM, RAM) and the data bus interface (DBIF) and the engine data bus interface (MDBIF) typically form the control device (STV) of the sensor system. and wherein the conventional magnetic field sensor is a Hall sensor or a GMR sensor or an AMR sensor or a CMR sensor or another XMR sensor or a quantum sensor with a different measurement principle. In particular, the quantum sensor is preferably a quantum sensor based on a microwave-free measuring principle using paramagnetic centers, the technical teaching of WO 2021 013 308 A1 is particularly preferred. According to the technical teaching of the document presented here, the quantum device preferably comprises a crystal with one or more paramagnetic centers, as already mentioned above. The crystal preferably comprises a diamond (HDNV), in particular an HD-NV diamond and/or HD-NV diamond range. The crystal, ie preferably the HD-NV diamond (HDNV), emits fluorescence radiation (FL) with a fluorescence radiation wavelength (λ _fl ) when irradiated with pump radiation (LB) of a pump radiation wavelength (λ _pmp ).

The fluorescence intensity curve of the intensity of the fluorescence radiation (FL) of the crystal, i.e. preferably of the HD-NV diamond (HDNV), typically has at least n fluorescence features with n greater than 2 when the crystal is correctly aligned as a function of the magnetic flux density B. The conventional magnetic field sensor determines magnetic field sensor readings for the magnetic flux density B at the location of the sensor system. The memory (NVM, RAM) preferably contains magnetic field sensor correction parameters at least temporarily. These magnetic field sensor correction parameters are preferably determined with previously known magnetic flux densities B before the measurement using the quantum device. In this case, these previously known magnetic flux densities preferably correspond to one or more characteristic magnetic flux densities B of n fluorescence features of the crystal, ie preferably of the HD-NV diamond (HDNV). The sensor system converts the magnetic field sensor readings to the corrected magnetic field sensor readings using the magnetic field sensor correction parameters. The computer core uses this for this purpose preferably a mathematical function that is typically stored at least temporarily in its memory (RAM, NVM). The mathematical function is preferably a polynomial.

The sensor system can also set the previously known magnetic flux densities B in such a way that the sensor system during the measurement of the intensity of the fluorescence radiation (FL) and/or the time delay of the modulation of the intensity of the fluorescence radiation (FL) compared to the modulation of the intensity of the pump radiation (LB) or the modulation of the modulation signal (S5) or a signal derived therefrom establishes that the magnetic flux density B corresponds to a fluorescence feature and that the characteristic magnetic flux density B of a fluorescence feature is present. In this case, the sensor system can also correct and track the magnetic field sensor correction parameters during operation. So if we are talking here about the sensor system adjusting the magnetic flux density and/or the orientation of the crystal in relation to the direction of the magnetic flux density B, then within the meaning of the document presented here it is also covered and claimed that the sensor system recognizes that the Direction of the magnetic flux density B corresponds to the orientation of the paramagnetic centers in the crystal and that the magnitude of the flux density B corresponds to the magnitude of a characteristic flux density B of a fluorescent feature.

The document presented here also deals with the use of the aforementioned effects, design and process principles to improve conventional sensors. The document presented here therefore also discloses a magnetic field sensor device, the magnetic field sensor device comprising at least one sensor element of a conventional magnetic field sensor. The term “conventional magnetic field sensor” is defined more precisely in the Glossary section of the document presented here in order to differentiate it from the design and process principles presented here and known from the prior art. In the sense of the section discussed here, the sensor element of the magnetic field sensor device presented here is preferably a device part of the conventional magnetic field sensor, which converts a parameter of the magnetic field, in particular the strength and/or direction of the magnetic flux density B, into one or more electrical signals. The magnetic field sensor device preferably comprises at least one crystal (HDNV) with at least one paramagnetic center. The crystal (HDNV) is preferably a diamond. Preferably the crystal (HDNV) is an HD-NV diamond. According to the proposal, the magnetic field sensor device now corrects some or all of the first measured values, which the magnetic field sensor device determines by means of the sensor element and thus with the aid of the conventional magnetic field sensor, with the aid of second measured values. The first measured values are determined by the magnetic field sensor device with the aid of the sensor element, that is to say with the aid of the conventional magnetic field sensor. The magnetic field sensor device simultaneously determines the far measured values with the aid of the fluorescence radiation (FL) of the paramagnetic centers of the crystal (HDNV). The magnetic field sensor device proposed in the present section thus firstly comprises a conventional magnetic field sensor and a quantum mechanical magnetic field sensor. The quantum-mechanical magnetic field sensor preferably comprises one or more crystals (HDNV) each with preferably one or more paramagnetic centers and/or with one or more pairs of coupled paramagnetic centers and/or with one or more clusters of paramagnetic centers. It is preferably at. one or more of the one or more crystals (HDNV) around one or more diamonds. Preferably, one or more of the one or more diamonds is an HD-NV diamond. Also, one or more of the crystals may have one or more HD-NV regions, each preferably having the characteristics of HD-NV diamond. The quantum mechanical sensor preferably detects the intensity of the fluorescence radiation (FL) of paramagnetic centers or of the one or more crystals and forms one or more measured values or one or more measured value signals from this. Likewise, the quantum mechanical sensor can also, if necessary, the time delay of the modulation intensity of the fluorescence radiation (FL) of paramagnetic centers or of the one or more crystals compared to the modulation of the intensity of the pump radiation (LB) or compared to the modulation of the modulation signal (S5) or a Determine the signal derived therefrom and form one or more measured values or one or more measured value signals. Preferably, one or more of the paramagnetic centers are paramagnetic centers in a crystal (HDNV) that is diamond and/or HD-NV diamond. One or more of the paramagnetic centers are preferably HD-NV centers and/or SiV centers and/or GeV centers and/or ST1 centers and/or TR12 centers.

The intensity of the fluorescence radiation (FL) of the crystal (HDNV), ie preferably a diamond and/or HD-NV diamond, preferably follows the above-described magnetic field sensor device of this section as a function of the magnetic flux density B of a fluorescence intensity curve. This fluorescence intensity curve preferably has fluorescence characteristics.

According to the proposal of the magnetic field sensor device presented here in this section, the magnetic field sensor device uses first measured values of the sensor element of the conventional magnetic field sensor of the magnetic field sensor device and second measured value pairs, which include pairs of measured values of the sensor element of the conventional magnetic field sensor of the magnetic field sensor device and measured values of the quantum mechanical magnetic field sensor of the magnetic field sensor device. The aim is to improve the precision of the first measured values. For this purpose, the magnetic field sensor device corrects first measured values, which the magnetic field sensor device determines by means of the sensor element of the conventional magnetic field sensor of the magnetic field sensor device, with the help of such second measured value pairs, which firstly with the help of the sensor element of the conventional magnetic field sensor and secondly simultaneously with the help of the fluorescence characteristics of the quantum mechanical magnetic field sensor of the magnetic field sensor device have been or will be won.

The time delay of the modulation of the intensity of the fluorescence radiation (FL) of the crystal (HDNV), i.e. preferably a diamond (HDNV) and/or a HD-NV diamond, typically follows the modulation of the pump radiation (LB) or the modulation of a modulation signal (S5) or a signal derived therefrom which irradiates the diamond (HDNV) or a modulation of a modulation signal (S5) or a signal derived therefrom as a function of the magnetic flux density B in a manner analogous to the fluorescence intensity curve of a fluorescence intensity delay curve as a function of the magnetic flux density B Typically, the fluorescence intensity delay curve also has fluorescence features. The magnetic field sensor device preferably determines first measured values, which the magnetic field sensor device determines by means of the sensor element, with the help of such second measured value pairs, one measured value of which was or is obtained firstly with the help of the sensor element and secondly whose other measured value was or is obtained simultaneously with the help of the fluorescence characteristics. The characteristic magnetic flux densities B of the fluorescence features thus serve as calibration points for the first measured values of the conventional magnetic field sensor of the magnetic field sensor device. The quantum sensor is only particularly precise when there are magnetic flux densities b corresponding to the characteristic magnetic flux densities B of the fluorescence features. In contrast, in flux density ranges with magnetic flux densities B, which deviate significantly from the magnetic flux densities B of the characteristic magnetic flux densities B, a quantum mechanical magnetic field sensor has reduced sensitivity and thus precision. The idea is to recalibrate the conventional magnetic field sensor in the presence of a magnetic flux density B that corresponds to a characteristic magnetic flux density B of a fluorescence feature of the fluorescence intensity curve and/or the fluorescence delay curve. I.e. the magnetic field sensor device recognizes the presence of a characteristic magnetic flux density B with the help of the quantum mechanical magnetic field sensor based on paramagnetic centers in the crystal and then determines the correction parameters of a correction function for correcting the measured values of the conventional magnetic field sensor in such a way that the corrected measured value of the conventional magnetic field sensor is present a magnetic flux density B corresponding to a characteristic magnetic flux density B of a fluorescence feature of the fluorescence intensity curve and/or the fluorescence delay curve corresponds to the value of this characteristic magnetic flux density B of a fluorescence feature of the fluorescence intensity curve and/or the fluorescence delay curve.

The magnetic field sensor device discussed in this section thus preferably comprises at least one sensor element of a conventional magnetic field sensor. The document presented here refers to the definition of a conventional magnetic field sensor in the Glossary section. For example, the conventional magnetic field sensor can be or include a Hall sensor or a GMR sensor or an AMR sensor or a CMR sensor or another XMR sensor. The sensor element is typically the device part of the conventional magnetic field sensor, which converts a parameter of the magnetic field, in particular the value and/or the direction of the magnetic flux density B, into an electrical signal or another signal, for example an optical signal. The magnetic field sensor device proposed in the section discussed here preferably comprises one or more crystals (HDNV) with one or more paramagnetic centers and/or one or more pairs of coupled paramagnetic centers and/or one or more clusters of paramagnetic centers and/or one or more clusters of Pairs of coupled paramagnetic centers. Preferably, the one or more crystals (HDNV) or crystals (HDNV) comprise diamond and/or one or more HD-NV diamonds and/or one or more HD-NV diamond domains, the features of which have the features of a HD-NV diamond . The one crystal (HDNV) or the several crystals (HDNV) of the quantum technological sensor of the magnetic field sensor device are preferably arranged to the sensor element of the conventional magnetic field sensor in such a way that the ratio of the amount of the magnetic flux density B, which the crystal or the Crystals (HDNV) flows through, to the amount of magnetic flux density B, which flows through the sensor element of the conventional magnetic field sensor, fixed or previously known or is essentially the same.

Group XVII (Hall sensor)

The section of this document presented here now deals with the magnetic field sensor device of the previous section using a magnetic field sensor device which, for example, includes a Hall sensor as a conventional magnetic field sensor. The sensor system that corresponds to such a magnetic field sensor device with a Hall sensor is the subject of the section now discussed. The principles dealt with in this section can therefore also be used for other conventional magnetic field sensors as part of the magnetic field sensor device and are therefore part of the disclosure of the document presented here.

On the basis of what has been described above, the document presented here now discloses such a sensor system in which the conventional magnetic field sensor is a Hall sensor. The sensor system that the document presented here hereby discloses thus comprises a Hall sensor and a quantum device. The quantum device may be a quantum sensor or a quantum computer or other quantum technological device. Another quantum technological device would be, for example, a quantum cryptographic device, such as a quantum noise generator used as a TRNG (true random number generator) for generating keys in cryptography.

First, we assume that the quantum technological device includes a quantum sensor or that the quantum technological device can be used at least partially as a quantum sensor.

The sensor system proposed in this section preferably includes a control device (STV), which preferably includes a memory (NVM, RAM) and a computer core (CPU), among other things. According to the proposal, the device comprises a crystal with one or more paramagnetic centers and/or with one or more pairs of coupled paramagnetic centers and/or with one or more clusters of paramagnetic centers and/or with one or more groups of pairs of coupled paramagnetic centers. Paramagnetic centers of these paramagnetic centers can preferably be NV centers in diamond as the crystal material of the crystal. Also, paramagnetic centers of these paramagnetic centers can be SiV centers in diamond as the crystal material of the crystal. Also, paramagnetic centers of these paramagnetic centers can be GeV centers in diamond as the crystal material of the crystal. Also, paramagnetic centers of these paramagnetic centers can be ST1 centers in diamond as the crystal material of the crystal. Also, paramagnetic centers of these paramagnetic centers may be TR12 centers in diamond as the crystal material of the crystal.

The crystal particularly preferably comprises a diamond, in particular an HD-NV diamond. When irradiated with pump radiation (LB) of a pump radiation wavelength (λ _pmp ), the crystal emits fluorescence radiation (FL) of a fluorescence wavelength (λ _fl ). The fluorescence intensity curve of the intensity of the fluorescence radiation (FL) of the crystal preferably has at least n fluorescence features with n greater than 2 as a function of the magnetic flux density B. The fluorescence delay curve of the time delay of a modulation intensity of the fluorescence radiation (FL) of the crystal compared to a time modulation of the intensity of the pump radiation (LB) or the modulation of a modulation signal (S5) or a signal derived therefrom preferably has at least n as a function of the magnetic flux density B Fluorescence features with n greater than 2.

The Hall sensor now determines Hall sensor measured values of the Hall sensor for the magnetic flux density B at the location of the sensor system. Memory (NVM, RAM) now includes Hall sensor correction parameters as information. For this purpose, the control device (STV) of the sensor system preferably sets n characteristic magnetic flux densities B of n fluorescence features of the crystal, preferably by means of sensor system sub-devices (MGx, MGy, MGz) that generate magnetic fields. These characteristic magnetic flux densities B each lead to a respective extreme of the intensity of the fluorescence radiation (FL) and/or to a respective extreme of the time delay of the modulation of the fluorescence radiation (FL) compared to the modulation of the pump radiation (LB) or the modulation of a modulation signal (S5 ) or a signal derived from it. The sensor system then preferably determines the respective n Hall sensor correction parameters with the aid of the quantum device at these respective n magnetic flux densities B, which correspond to the respective n characteristic magnetic flux densities B of the respective n fluorescence features of the crystal. The sensor system then converts the Hall sensor readings to the Hall sensor corrected Hall sensor measured values using the previously determined n Hall sensor correction parameters. In this case, the computer core (CPU) preferably uses a correction polynomial that is stored as program code, for example, in the memory (NVM, RAM) of the control device (STV). For example, the n Hall sensor correction parameters can be the n coefficients of this correction polynomial. If the sensor system uses n calibration points, which are based on n calibration measurement values from n calibration measurements with n magnetic flux densities B and whose n magnetic flux densities B correspond to the n characteristic magnetic flux densities of the corresponding n fluorescence features, the computer core preferably determines n Hall sensor correction parameters for the correction polynomial. The control computer (CPU) then preferably stores these n Hall sensor correction parameters in its memory (NVM, RAM). The correction polynomial is then an n-th degree polynomial.

After the computer core (CPU) of the control device (STV) has carried out a calibration in this way, it is able to correct new Hall sensor measured values of the Hall sensor after they have been recorded. To do this, the computer core (CPU) records the new Hall sensor readings from the Hall sensor. The computer core (CPU) transforms these detected Hall sensor measured values by means of the correction polynomial stored in its memory (NVM, RAM) and the Hall sensor correction parameters also stored in its memory to corrected Hall sensor measured values. The sensor system then outputs these corrected Hall sensor measured values and/or keeps them ready, for example in the memory (RAM, NVM) of the control device (STV), for example for retrieval via an external data bus (EXTDB).

If the sensor system (STV), preferably the computer core (CPU), determines that a recorded Hall sensor measurement value for a magnetic flux density B essentially corresponds to the value of the characteristic flux density B of a fluorescence feature, the sensor system can carry out a recalibration. A recorded Hall sensor measurement value for a magnetic flux density B corresponds to the value of the characteristic flux density B of a fluorescence feature in the sense of the document presented here essentially if the absolute value difference between the value of the characteristic flux density B of a fluorescence feature and the Hall sensor measurement value for a magnetic flux density B is less than a recalibration threshold. In order to be able to carry out this recalibration, the information in the memory (NVM, RAM) of the control device (STV) preferably includes firstly the values of characteristic magnetic flux densities B of relevant fluorescence features and preferably secondly the Hall sensor measured values of the Hall sensor for these characteristic fluorescence features that Sensor system has detected during a calibration or recalibration using the Hall sensor. Furthermore, the information in the memory (NVM, RAM) of the control device (STV) of the sensor system preferably also includes the recalibration threshold value. The control device (STV) now preferably varies the total magnetic flux density B acting on the Hall sensor and the crystal (HDNV) of the quantum technological device by means of means for generating an additional superimposed magnetic flux density B (MGx, MGy, MGz). A pump radiation source (LD) of the sensor system then typically irradiates the crystal (HDNV) of the sensor system with pump radiation (LB) of the pump radiation wavelength (λ _pmp ), The pump radiation source (LD) of the sensor system preferably only then irradiates the crystal (HDNV) of the sensor system with pump radiation (LB) of the pump radiation wavelength ( λ _pmp ) when said magnitude difference between the value of the characteristic flux density B of a fluorescent feature and the Hall sensor reading for a magnetic flux density B is less than the recalibration threshold. This may save energy. The crystal (HDNV) then preferentially emits fluorescence radiation (FL) of a fluorescence radiation wavelength (λ _fl ). A photodetector (PD) preferentially records this fluorescence radiation (FL). An evaluation device (AMP, LIA) determines a fluorescence measurement value. This fluorescence reading can be a reading for the intensity of the fluorescence radiation (FL). This fluorescence measured value can be a measured value for the time delay of the modulation intensity of the fluorescence radiation (FL) compared to a modulation of the intensity of the pump radiation (LB) or a modulation of a modulation signal (S5) or a signal derived therefrom. Typically, the control device (STV) of the sensor system sets a plurality of magnetic flux densities B as target flux densities B, which without recalibration should correspond to different values of magnetic flux densities B within a value interval around the value of the characteristic flux density B of the fluorescent feature in question. The value interval preferably corresponds to the interval beginning with the value of the characteristic flux density B of the relevant fluorescence feature minus the recalibration threshold and ending with the value of the characteristic flux density B of the relevant fluorescence feature plus the recalibration threshold. Typically, the control device (STV) of the sensor system then determines respective fluorescence measurement values and respective Hall sensor measurement values for the respective setpoint flux densities B of this plurality of magnetic setpoint flux densities B. A respective Hall sensor measured value for a respective desired magnetic flux density B is thus assigned to each respective fluorescence measured value. The extremum of these fluorescence measurement values is then at an extremal magnetic nominal flux density B. The extremal magnetic Target flux density corresponds to a measured Hall sensor value, which this publication refers to as extreme Hall sensor measured value in the following. In the calibrated state, the value of this extremal target magnetic flux density B is equal to the previously known value of the characteristic magnetic flux density B for the fluorescence feature in question, which the memory (NVM, RAM) of the control device (STV) holds ready as information. If the amount of the value difference between the value of the extreme target flux density B and the value of the characteristic flux density B is greater than the amount of an update threshold, the detected extremal Hall sensor measured value of the extremal target flux density B replaces the previously stored Hall sensor measured value in the memory (NVM, RAM) of the control device (STV). This control device then recalculates the Hall sensor correction factors and stores them in the memory (NVM, RAM) of the control device (STV). This completes the recalibration.

The document presented here also discloses that a proposed sensor system can also use the recalibration method described immediately above for conventional magnetic field sensors within the meaning of the document presented here. The relevant conventional magnetic field sensor then replaces the Hall sensor in the recalibration process described immediately above in this section. Instead of Hall sensor readings, these are sensor readings from a conventional magnetic field sensor. Instead of an extreme Hall sensor reading, the method then determines an extreme reading from the conventional magnetic field sensor. Instead of Hall sensor correction factors, the recalibration method then uses sensor correction factors for a conventional magnetic field sensor. The corresponding recalibration method of a sensor system with a conventional magnetic field sensor is therefore part of the disclosure of the document presented here.

A suitable Hall sensor device preferably comprises at least one Hall plate. Typically, a suitable Hall sensor device comprises at least one crystal having one or more paramagnetic centers and/or one or more pairs of coupled paramagnetic centers and/or one or more clusters of paramagnetic centers and/or one or more clusters of pairs of coupled paramagnetic centers. Preferably the crystal comprises diamond. Preferably, the paramagnetic centers in question can include, for example but not only, NV centers and/or SiV centers and/or GeV centers and/or TR12 centers and/or ST1 centers. The Hall sensor device preferably corrects measured values, which the Hall sensor device determines using the Hall plate, with the help of measured values, firstly as Hall sensor measured values using the Hall plate and secondly as fluorescence measured values simultaneously using the fluorescence radiation (FL) of the paramagnetic centers were or will be won, corrected. Such a Hall sensor device is therefore typically a Hall sensor system, as described in this document in the text directly in this section.

The sensor system preferably acquires one or more fluorescence intensity measurement values of the intensity of the fluorescence radiation (FL) of the crystal (HDNV). The fluorescence intensity measured value preferably follows the intensity of the fluorescence radiation (FL) of the crystal (HDNV) as a function of the magnetic flux density B of a fluorescence intensity curve. In the presence of magnetic flux densities B, the magnitude and direction of which correspond to the magnitude and direction of characteristic magnetic flux densities B, this fluorescence intensity curve has fluorescence characteristics.

The sensor system can preferably have one or more fluorescence delay measured values for the time delay of the modulation of the intensity of the fluorescence radiation (FL) of the crystal (HDNV) compared to the modulation of the pump radiation (LB) or the modulation of the modulation signal (S5) or a signal derived therefrom. The fluorescence delay measured value preferably follows the time delay of the modulation of the intensity of the fluorescence radiation (FL) of the crystal (HDNV) as a function of the magnetic flux density B of a fluorescence delay curve. In the presence of magnetic flux densities B, the magnitude and direction of which correspond to the magnitude and direction of characteristic magnetic flux densities B, this fluorescence delay curve typically also has fluorescence characteristics.

The Hall sensor device corrects first measured values, which the Hall sensor device determines using the Hall plate, using second pairs of measured values, which the Hall sensor device obtains first using the Hall plate and second simultaneously using the fluorescence features.

The Hall sensor device preferably comprises at least one Hall plate and at least one crystal (HDNV). The at least one diamond (HDNV) preferably comprises a diamond and/or an HD-NV diamond and/or an HD-NV diamond area. The at least one crystal (HDNV) preferably comprises one or more paramagnetic centers and/or one or more pairs of coupled paramagneti shear centers and/or one or more clusters of paramagnetic centers and/or one or more clusters of pairs of coupled paramagnetic centers. Preferably one or more of the one or more paramagnetic centers are NV centers and/or SiV centers and/or GeV centers and/or ST1 centers and7 or TR12 centers.

One or more of the crystals (HDNV) are preferably arranged relative to the Hall plate in such a way that the ratio of the amount of magnetic flux density B flowing through the crystal (HDNV) to the amount of magnetic flux density B flowing through the Hall sensor device is fixed or previously known or essentially the same.

Group XVIII (magnetic field sensor)

In this section, the document presented here now describes a sensor system with a conventional magnetic field sensor, a quantum device, a memory (NVM, RAM) and a computer core (CPU). The conventional magnetic field sensor is preferably a Hall sensor or a GMR sensor or an AMR sensor or a CMR sensor or another XMR sensor. With regard to the definition of the conventional magnetic field sensor, the document presented here again refers to the following Glossary section. The quantum device again preferably comprises one or more crystals (HDNV). Preferably one or more crystals (HDNV) of the one or more crystals (HDNV) comprise one or more diamonds (HDNV). The one or more diamonds may include one or more HD-NV diamonds

Preferably, one or more crystals of the one or more crystals (HDNV) each comprise one or more paramagnetic centers and/or one or more pairs of coupled paramagnetic centers and/or one or more groups of paramagnetic centers and/or one/or more groups of pairs of coupled paramagnetic centers.

The one or more crystals (HDNV) emit fluorescence radiation (FL) with a fluorescence radiation wavelength (λ _fl ) when irradiated with a pump radiation (LB) of a pump radiation wavelength (λ _pmp ).

Fluorescence intensity curve of the fluorescence intensity measured value of the intensity of the fluorescence radiation (FL) of the diamond (HDNV) has at least n fluorescence features as a function of the magnetic flux density B. In this case, n is an integer greater than 2. The conventional magnetic field sensor determines magnetic field sensor measurement values for the magnetic flux density B at the location of the sensor system. The memory (NVM, RAM) of the sensor system preferably contains magnetic field sensor correction parameters. Preferably, the magnetic field sensor correction parameters were determined using the quantum device at magnetic flux densities B corresponding to the respective n characteristic magnetic flux densities B of the n fluorescence features of the crystal. The sensor system now converts the magnetic field sensor readings to the corrected magnetic field sensor readings using the magnetic field sensor correction parameters.

In another embodiment, the magnetic field sensor device includes at least one sensor element of a conventional magnetic field sensor. The conventional magnetic field sensor can again be a Hall sensor or a GMR sensor or an AMR sensor or a CMR sensor or another XMR sensor. The document presented here again refers to the description of the conventional magnetic field sensor in the Glossary section of the document presented here. The sensor element is preferably a device part of the conventional magnetic field sensor, which converts a parameter of the magnetic field, in particular the magnetic flux density B, into an electrical signal. The magnetic field sensor device comprises one or more crystals (HDNV). One or more crystals (HDNV) of the one or more crystals (HDNV) are preferably one or more diamonds. Preferably one or more diamonds of these one or more diamonds are HD-NV diamonds. Preferably, one or more crystals of the one or more crystals (HDNV) comprise one or more HD-NV diamond domains. The characteristics of the HD-NV diamond areas each have characteristics of an HD-NV diamond. Preferably, one or more of the one or more crystals comprises one or more paramagnetic centers and/or one of more pairs of coupled paramagnetic centers and/or one or more clusters of paramagnetic centers and/or one/or more clusters of pairs of coupled paramagnetic centers. Preferably, one or more paramagnetic centers of the one or more paramagnetic centers comprise NV centers and/or SiV centers and/or GeV centers and/or ST1 centers and/or TR12 centers. The magnetic field sensor device corrects first measured values, which the magnetic field sensor device determines using the sensor element, with the aid of second measured value pairs, which the magnetic field sensor device uses to Firstly with the help of the sensor element and secondly simultaneously with the help of the fluorescence radiation (FL) of the paramagnetic centers. The magnetic field sensor device obtains these second pairs of measured values, at magnetic flux densities B, which correspond to the characteristic magnetic flux density B of a fluorescence characteristic of the fluorescence intensity curve and/or the fluorescence delay curve of the fluorescence radiation (FL) of one or more crystals of the one or more crystals (HDNV).

The fluorescence intensity measured value of the intensity of the fluorescence radiation (FL) of the crystal (HDNV) preferably follows a fluorescence intensity curve as a function of the magnetic flux density B. This fluorescence intensity curve has fluorescence characteristics, in particular when a preferred direction of one or more paramagnetic centers of one or more crystals of the one or more crystals (HDNV) is correctly aligned.

The fluorescence retardation measured value of the delay in the modulation of the intensity of the fluorescence radiation (FL) of the crystal (HDNV) versus the modulation of a pump radiation (LB) or the modulation of a modulation signal or a signal derived therefrom preferably follows a fluorescence retardation curve as a function of the magnetic flux density B. This fluorescence delay curve typically also has fluorescence features, in particular when a preferred direction of one or more paramagnetic centers of one or more crystals of the one or more crystals (HDNV) is correctly aligned.

The magnetic field sensor device corrects first measured values, which the magnetic field sensor device determines using the sensor element, with the aid of such second measured value pairs that the magnetic field sensor device obtains firstly using the sensor element and secondly simultaneously using the fluorescence features. The magnetic field sensor device preferably obtains these second pairs of measured values if the magnitude and direction of the magnetic flux density corresponds to a characteristic magnetic flux density B of a fluorescence feature. The magnetic field sensor device recognizes that the magnetic flux density corresponds in magnitude and direction to a characteristic magnetic flux density B of a fluorescence feature from the fact that the fluorescence intensity measured value and/or the fluorescence delay measured value of the fluorescence radiation (FL) of one or more crystals (HDNV) of the one or more crystals (HDNV) one value for a fluorescent feature.

Typically, the fluorescence delay measurement follows the time delay of the modulation of the intensity of the fluorescence radiation (FL) of the one crystal (HDNV) or multiple crystals (HDNV) versus the modulation of the pump radiation (LB) that irradiates the diamond (HDNV), or a modulation a modulation signal (S5) or a signal derived therefrom as a function of the magnetic flux density B of a fluorescence intensity delay curve. When the paramagnetic centers are correctly aligned with the direction of the magnetic flux density B, the fluorescence intensity delay curve typically exhibits fluorescence features. The magnetic field sensor device corrects first measured values, which the magnetic field sensor device determines using the sensor element, with the aid of such second measured value pairs that the magnetic field sensor device obtains firstly using the sensor element and secondly simultaneously using the fluorescence features. Typically, the magnetic field sensor device includes at least one sensor element of a conventional magnetic field sensor. The conventional magnetic field sensor is preferably a Hall sensor or a GMR sensor or an AMR sensor or a CMR sensor or another XMR sensor. The document presented here refers to the explanations on the conventional magnetic field sensor in the Glossary section. The sensor element is preferably the device part of the conventional magnetic field sensor, which converts a parameter of the magnetic field, in particular the magnetic flux density B, into an electrical signal. The magnetic field sensor device preferably comprises at least one or more crystals (HDNV). One or more crystals (HDNV) preferably comprise one or more paramagnetic centers and/or one or more pairs of coupled paramagnetic centers and/or one or more clusters of paramagnetic centers and/or one or more clusters of pairs of paramagnetic centers. Preferably, one or more crystals (HDNV) of the one or more crystals (HDNV) comprise one or more diamonds and/or one or more HD-NV diamonds and/or one or more HD-NV diamond regions. An HD-NV diamond area preferably has, inter alia, the characteristics of an HD-NV diamond. Preferably, one or more of the one or more paramagnetic centers comprises NV centers and/or SiV centers and/or GeV centers and/or ST1 centers and/or TR12 centers. One or more crystals (HDNV) of the one or more crystals (HDNV) are preferably arranged to the sensor element that the ratio of the amount of magnetic flux density B, the one crystal (HDNV) or the several Crystals (HDNV) flows through, to the amount of magnetic flux density B, which flows through the conventional magnetic field sensor, fixed or previously known or is essentially the same.

advantage

The evaluation of the fine structures of the intensity curve of the intensity of the fluorescence radiation of an HD-NV diamond as a function of the strength of the magnetic flux density B and its orientation relative to the NV centers opens up completely new possibilities. However, the advantages are not limited to this.

Features of the invention

Features I (magnetic tilt angle detection method)

• ▪ Bereitstellen eines Kristalls (HDNV),
• ▪ wobei der Kristall ein oder mehrere paramagnetische Zentren und/oder ein oder mehrere Paare gekoppelter paramagnetischer Zentren und/oder ein oder mehrere Cluster paramagnetischer Zentren und/oder ein oder mehrere Cluster von Paaren gekoppelter paramagnetischer Zentren und/oder einen Diamanten und/oder einen HDNV-Diamantbereich, der die Merkmale eines HDNV-Diamanten aufweist, umfasst;
• ▪ wobei insbesondere die paramagnetischen Zentren an nukleare Spins von Atomen in der Umgebung paramagnetischer Zentren dieser paramagnetischen Zentren koppelbar sein können,
• ▪ Bereitstellen einer Magnetfeldquelle (MGx, MGy, MGz) mit einem gegenüber dem Kristall (HDNV) um den Kippwinkel gegenüber dem Kristall (HDNV) mechanisch oder elektrisch verkippbaren magnetischen Feld mit einer magnetischen Flussdichte (B) mit einer Richtung der magnetischen Flussdichte (B);
• ▪ Bestrahlen des Kristalls (HDNV) mit Pumpstrahlung (LB) ggf. in Abhängigkeit von einem Modulationssignal (S5);
• Erfassen der Intensität der Fluoreszenzstrahlung (FL) des Kristalls (HDNV) und/oder Erfassen der der zeitlichen Verzögerung der Modulation der Intensität der Fluoreszenzstrahlung (FL) des Kristalls (HDNV) gegenüber einer Modulation der Intensität der Pumpstrahlung (LB) und einer Modulation eines Modulationssignals (S5) und/oder eines daraus abgeleiteten Signals;
• ▪ Bilden eines Intensitätsmesswerts für die Intensität der Fluoreszenzstrahlung (FL) des Kristalls (HDNV) und/oder Bilden eines Verzögerungsmesswerts zeitlichen Verzögerung der Modulation der Intensität der Fluoreszenzstrahlung (FL) des Kristalls (HDNV) gegenüber einer Modulation der Intensität der Pumpstrahlung (LB) und einer Modulation eines Modulationssignals (S5) und/oder eines daraus abgeleiteten Signals;
• ▪ gekennzeichnet dadurch
• ▪ dass die Magnetfeldquelle (MGx, MGy, MGz) am Ort des Kristalls (HDNV) ein Magnetfeld bei einem Kippwinkel von 0° eine magnetische Flussdichte (B) erzeugt, die einer magnetischen Flussdichte entspricht, die zu einem Abfall des Intensitätsmesswerts und/oder des Verzögerungsmesswerts der Fluoreszenzstrahlung (FL) innerhalb eines Fluoreszenzmerkmals führt,
• ▪ wobei ein Fluoreszenzmerkmal ein Extremum der Fluoreszenzintensitätskurve der Intensität der Fluoreszenzstrahlung (FL) in Abhängigkeit von dem Betrag der magnetischen Flussdichte (B) am Ort des Kristalls (HDNV) ist, das durch den Betrag der kennzeichnenden magnetischen Flussdichte B an diesem Extremum gekennzeichnet ist, und/oder
• ▪ wobei ein Fluoreszenzmerkmal ein Extremum der Fluoreszenzverzögerungskurve der Verzögerung der Fluoreszenzstrahlung (FL) in Abhängigkeit von dem Betrag der magnetischen Flussdichte (B) am Ort des Kristalls (HDNV) ist, das durch den Betrag der kennzeichnenden magnetischen Flussdichte B an diesem Extremum gekennzeichnet ist, und
• ▪ dass die Änderung des Kippwinkels abweichend von einem Kippwinkel von 0° zur einer Zunahme des Fluoreszenzintensitätswerts der Fluoreszenzstrahlung (FL) gegenüber der dem Fluoreszenzintensitätswert der Fluoreszenzstrahlung (FL) bei einem Kippwinkel von 0° führt und/oder
• ▪ dass die Änderung des Kippwinkels abweichend von einem Kippwinkel von 0° zur einer Verzögerungsabnahme des Fluoreszenzverzögerungswerts der Fluoreszenzstrahlung (FL) gegenüber der dem Fluoreszenzverzögerungswert der Fluoreszenzstrahlung (FL) bei einem Kippwinkel von 0° führt.

Feature 1: Method of detecting a tilt angle with the steps

• ▪ Provision of a crystal (HDNV),
• ▪ wherein the crystal has one or more paramagnetic centers and/or one or more pairs of coupled paramagnetic centers and/or one or more clusters of paramagnetic centers and/or one or more clusters of pairs of coupled paramagnetic centers and/or a diamond and/or a HDNV -diamond range exhibiting the characteristics of an HDNV diamond;
• ▪ where in particular the paramagnetic centers can be coupled to nuclear spins of atoms in the vicinity of paramagnetic centers of these paramagnetic centers,
• ▪ Provision of a magnetic field source (MGx, MGy, MGz) with a magnetic field that can be mechanically or electrically tilted relative to the crystal (HDNV) by the tilt angle relative to the crystal (HDNV) with a magnetic flux density (B) with a direction of the magnetic flux density (B) ;
• ▪ Irradiation of the crystal (HDNV) with pump radiation (LB), possibly depending on a modulation signal (S5);
• Detecting the intensity of the fluorescence radiation (FL) of the crystal (HDNV) and/or detecting the time delay of the modulation of the intensity of the fluorescence radiation (FL) of the crystal (HDNV) compared to a modulation of the intensity of the pump radiation (LB) and a modulation of a modulation signal (S5) and/or a signal derived therefrom;
• ▪ forming an intensity measurement for the intensity of the fluorescence radiation (FL) of the crystal (HDNV) and/or forming a delay measurement of the time delay of the modulation of the intensity of the fluorescence radiation (FL) of the crystal (HDNV) compared to a modulation of the intensity of the pump radiation (LB) and a modulation of a modulation signal (S5) and/or a signal derived therefrom;
• ▪ characterized by
• ▪ that the magnetic field source (MGx, MGy, MGz) at the location of the crystal (HDNV) generates a magnetic field at a tilt angle of 0° a magnetic flux density (B) that corresponds to a magnetic flux density that leads to a drop in the intensity reading and/or the delay measurement of fluorescence radiation (FL) within a fluorescence feature,
• ▪ where a fluorescence feature is an extremum of the fluorescence intensity curve of the intensity of the fluorescence radiation (FL) as a function of the magnitude of the magnetic flux density (B) at the location of the crystal (HDNV), which is characterized by the magnitude of the characteristic magnetic flux density B at this extremum, and or
• ▪ where a fluorescence feature is an extremum of the fluorescence retardation curve of the retardation of the fluorescence radiation (FL) as a function of the magnitude of the magnetic flux density (B) at the location of the crystal (HDNV), which is characterized by the magnitude of the characteristic magnetic flux density B at this extremum, and
• ▪ that the change in the tilt angle deviating from a tilt angle of 0° leads to an increase in the fluorescence intensity value of the fluorescence radiation (FL) compared to the fluorescence intensity value of the fluorescence radiation (FL) at a tilt angle of 0° and/or
• ▪ that changing the flip angle from a flip angle of 0° leads to a decrease in the fluorescence retardation value of the fluorescence radiation (FL) compared to the fluorescence retardation value of the fluorescence radiation (FL) at a flip angle of 0°.

• ▪ wobei der Kristall (HDNV) Diamant, insbesondere einen HD-NV-Diamanten (HDNV), umfasst und
• ▪ wobei paramagnetische Zentren der paramagnetischen Zentren NV-Zentren und/oder SiV-Zentren und/oder GeV-Zentren und/oder ST1-Zentren und/oder TR12-Zentren umfassen.

Feature 2: procedure according to feature 1,

• ▪ wherein the crystal (HDNV) comprises diamond, in particular a HD-NV diamond (HDNV), and
• ▪ wherein paramagnetic centers of the paramagnetic centers include NV centers and/or SiV centers and/or GeV centers and/or ST1 centers and/or TR12 centers.

• ▪ mit einem Kristall (HDNV),
• ▪ wobei der Kristall ein oder mehrere paramagnetische Zentren und/oder ein oder mehrere Paare gekoppelter paramagnetischer Zentren und/oder ein oder mehrere Cluster paramagnetischer Zentren und/oder ein oder mehrere Cluster von Paaren gekoppelter paramagnetischer Zentren und/oder einen Diamanten und/oder einen HDNV-Diamantbereich, der die Merkmale eines HDNV-Diamanten aufweist, umfasst;
• ▪ wobei insbesondere die paramagnetischen Zentren an nukleare Spins von Atomen in der Umgebung paramagnetischer Zentren dieser paramagnetischen Zentren koppelbar sein können,
• ▪ mit einer Magnetfeldquelle (MGx, MGy, MGz) und
• ▪ mit einer Pumpstrahlungsquelle (LD) und
• ▪ mit einem Fotodetektor (PD) und
• ▪ mit einer Auswerteeinheit, die insbesondere einen Verstärker und/oder einen Lock-In-Verstärker (LIA) umfassen kann,
• ▪ wobei die Pumpstrahlungsquelle (LD) den Kristall (HDNV) mit Pumpstrahlung (LB) mit einer Pumpstrahlungswellenlänge (λ_pmp) ggf. in Abhängigkeit von einem Modulationssignal (S5) bestrahlt und
• ▪ wobei der Kristall (HDNV) Fluoreszenzstrahlung (FL) mit einer Fluoreszenzstrahlungswellenlänge (λ_fl) emittiert und
• ▪ wobei der Fotodetektor (PD) die Intensität der Fluoreszenzstrahlung (FL) des Kristalls (HDNV) erfasst und in Abhängigkeit von der Intensität der Fluoreszenzstrahlung (FL) ein Empfangssignal (S0) bildet und
• ▪ wobei die Auswerteinheit, insbesondere ein Lock-In-Verstärker (LIA), aus dem Empfangssignal (S0) einen Fluoreszenzintensitätsmesswert für die Intensität der Fluoreszenzstrahlung (FL) des Kristalls (HDNV) bildet und/oder einen Fluoreszenzverzögerungsmesswert für die zeitliche Verzögerung der Modulation der Intensität der Fluoreszenzstrahlung (FL) des Kristalls (HDNV) gegenüber der Modulation der Pumpstrahlung (LB) oder gegenüber der Modulation des Modulationssignals oder gegenüber einem daraus abgeleiteten Signal bildet und
• ▪ wobei der Fluoreszenzintensitätsmesswert und7oder der Fluoreszenzverzögerungsmesswert jeweils ein Parameterwert eines oder mehrerer Ausgangssignale der Auswerteinheit (LIA) sein können und
• ▪ wobei die Magnetfeldquelle (MGx, MGy, MGz) ein um den Kippwinkel gegenüber dem Kristall (HDNV) mechanisch oder elektrisch verkippbares magnetisches Feld erzeugt und
• ▪ wobei die Magnetfeldquelle (MGx, MGy, MGz) am Ort des Kristalls (HD-NV) bei einem Kippwinkel von 0° ein Magnetfeld mit einer magnetischen Flussdichte (B) erzeugt, die einer kennzeichnenden magnetischen Flussdichte B des Fluoreszenzmerkmals entspricht, die zu einer Betragsminderung des Fluoreszenzintensitätsmesswerts infolge eines Intensitätsabfalls der Intensität der Fluoreszenzstrahlung (FL) und/oder zu einer Betragssteigerung des Fluoreszenzverzögerungsmesswerts infolge einer Verzögerungszunahme innerhalb des Fluoreszenzmerkmals führt und
• ▪ wobei ein Fluoreszenzmerkmal ein Extremum der Fluoreszenzintensitätskurve der Intensität der Fluoreszenzstrahlung (FL) in Abhängigkeit von dem Betrag der magnetischen Flussdichte (B) am Ort des Kristalls (HDNV) ist, dass durch den Betrag der kennzeichnenden magnetischen Flussdichte B an diesem Extremum gekennzeichnet ist, und/oder
• ▪ wobei das Fluoreszenzmerkmal ein Extremum der Fluoreszenzverzögerungskurve der Verzögerung der Modulation der Intensität der Fluoreszenzstrahlung (FL) gegenüber der Modulation der Pumpstrahlung (LB) oder der Modulation des Modulationssignals (S5) oder eines daraus abgeleiteten Signals in Abhängigkeit von dem Betrag der magnetischen Flussdichte (B) am Ort des Kristalls (HDNV) ist, dass durch den Betrag der kennzeichnenden magnetischen Flussdichte B an diesem Extremum gekennzeichnet ist, und
• ▪ wobei die Änderung des Kippwinkels abweichend von einem Kippwinkel von 0° zur einer Betragszunahme des Fluoreszenzintensitätsmesswerts infolge der Zunahme der Intensität der Fluoreszenzstrahlung (FL) gegenüber der der Intensität der Fluoreszenzstrahlung (FL) und/oder zur einer Betragsverminderung des Fluoreszenzverzögerungsmesswerts infolge der Abnahme der Verzögerung der Modulation der Intensität der Fluoreszenzstrahlung (FL) gegenüber der der Verzögerung der Modulation der Intensität der Fluoreszenzstrahlung (FL) bezogen auf die Modulation der Pumpstrahlung (LB) oder die Modulation des Modulationssignals (S5) oder eines daraus abgeleiteten Signals bei einem Kippwinkel von 0° führt und
• ▪ wobei somit der Fluoreszenzintensitätsmesswert und/oder der Fluoreszenzverzögerungsmesswert jeweils einen Wert darstellen, die jeweils von dem Kippwinkel abhängen.

Feature 3 Device for detecting a tilt angle

• ▪ with a crystal (HDNV),
• ▪ wherein the crystal has one or more paramagnetic centers and/or one or more pairs of coupled paramagnetic centers and/or one or more clusters of paramagnetic centers and/or one or more clusters of pairs of coupled paramagnetic centers and/or a diamond and/or a HDNV -diamond range exhibiting the characteristics of an HDNV diamond;
• ▪ where in particular the paramagnetic centers can be coupled to nuclear spins of atoms in the vicinity of paramagnetic centers of these paramagnetic centers,
• ▪ with a magnetic field source (MGx, MGy, MGz) and
• ▪ with a pump radiation source (LD) and
• ▪ with a photodetector (PD) and
• ▪ with an evaluation unit, which can in particular include an amplifier and/or a lock-in amplifier (LIA),
• ▪ wherein the pump radiation source (LD) irradiates the crystal (HDNV) with pump radiation (LB) with a pump radiation wavelength (λ _pmp ), possibly depending on a modulation signal (S5) and
• ▪ wherein the crystal (HDNV) emits fluorescence radiation (FL) with a fluorescence radiation wavelength (λ _fl ) and
• ▪ whereby the photodetector (PD) detects the intensity of the fluorescence radiation (FL) of the crystal (HDNV) and forms a received signal (S0) depending on the intensity of the fluorescence radiation (FL) and
• ▪ wherein the evaluation unit, in particular a lock-in amplifier (LIA), forms a fluorescence intensity measured value for the intensity of the fluorescence radiation (FL) of the crystal (HDNV) from the received signal (S0) and/or a fluorescence delay measured value for the time delay of the modulation of the Intensity of the fluorescence radiation (FL) of the crystal (HDNV) against the modulation of the pump radiation (LB) or against the modulation of the modulation signal or against a signal derived therefrom and
• ▪ wherein the fluorescence intensity measured value and7or the fluorescence delay measured value can each be a parameter value of one or more output signals of the evaluation unit (LIA) and
• ▪ whereby the magnetic field source (MGx, MGy, MGz) generates a magnetic field that can be tilted mechanically or electrically by the tilt angle relative to the crystal (HDNV) and
• ▪ where the magnetic field source (MGx, MGy, MGz) at the location of the crystal (HD-NV) at a tilt angle of 0° generates a magnetic field with a magnetic flux density (B) that corresponds to a characteristic magnetic flux density B of the fluorescence feature, resulting in a Decreasing the magnitude of the fluorescence intensity reading as a result of an intensity drop in the intensity of the fluorescence radiation (FL) and/or leading to an magnitude increase in the fluorescence delay reading as a result of an increase in delay within the fluorescent feature and
• ▪ where a fluorescence feature is an extremum of the fluorescence intensity curve of the intensity of the fluorescence radiation (FL) as a function of the magnitude of the magnetic flux density (B) at the location of the crystal (HDNV), which is characterized by the magnitude of the characteristic magnetic flux density B at this extremum, and or
• ▪ wherein the fluorescence feature is an extremum of the fluorescence delay curve of the delay in the modulation of the intensity of the fluorescence radiation (FL) versus the modulation of the pump beam ment (LB) or the modulation of the modulation signal (S5) or a signal derived therefrom as a function of the magnitude of the magnetic flux density (B) at the location of the crystal (HDNV) is characterized by the magnitude of the characteristic magnetic flux density B at this extreme is and
• ▪ wherein the change in flip angle other than a flip angle of 0° results in an increase in magnitude of the fluorescence intensity reading due to the increase in intensity of fluorescence (FL) versus intensity of fluorescence (FL) and/or to a decrease in magnitude of the fluorescence delay reading due to the decrease in delay the modulation of the intensity of the fluorescence radiation (FL) compared to the delay in the modulation of the intensity of the fluorescence radiation (FL) in relation to the modulation of the pump radiation (LB) or the modulation of the modulation signal (S5) or a signal derived therefrom at a flip angle of 0° leads and
• ▪ whereby the fluorescence intensity measurement and/or the fluorescence delay measurement each represent a value which each depends on the flip angle.

• ▪ wobei der Kristall (HDNV) Diamant, insbesondere einen HD-NV-Diamanten (HDNV), umfasst und
• ▪ wobei paramagnetische Zentren der paramagnetischen Zentren NV-Zentren und/oder SiV-Zentren und/oder GeV-Zentren und/oder ST1-Zentren und/oder TR12-Zentren umfassen.

Feature 4: Procedure according to feature 0

• ▪ wherein the crystal (HDNV) comprises diamond, in particular a HD-NV diamond (HDNV), and
• ▪ wherein paramagnetic centers of the paramagnetic centers include NV centers and/or SiV centers and/or GeV centers and/or ST1 centers and/or TR12 centers.

Features II (mechanical tilt angle detection method)

• ▪ Bereitstellen einer Magnetfeldquelle (MGx, MGy, MGz);
• ▪ Bereitstellen eines Kristalls (HDNV),
• ▪ wobei der Kristall ein oder mehrere paramagnetische Zentren und/oder ein oder mehrere Paare gekoppelter paramagnetischer Zentren und/oder ein oder mehrere Cluster paramagnetischer Zentren und/oder ein oder mehrere Cluster von Paaren gekoppelter paramagnetischer Zentren und/oder einen Diamanten und/oder einen HDNV-Diamantbereich, der die Merkmale eines HDNV-Diamanten aufweist, umfasst;
• ▪ wobei insbesondere die paramagnetischen Zentren an nukleare Spins von Atomen in der Umgebung paramagnetischer Zentren dieser paramagnetischen Zentren koppelbar sein können,
• ▪ wobei der Kristall (HDNV) gegenüber der Richtung der magnetischen Flussdichte (B) des magnetischen Felds der Magnetfeldquelle (MGx, MGy, MGz) um einen ersten Vorrichtungskippwinkel (α) um eine erste Kippachse (AXx) mechanisch oder elektrisch drehbar ist und
• ▪ wobei der Kristall (HDNV) bevorzugt, aber nicht notwendigerweise, gegenüber der Richtung der magnetischen Flussdichte (B) des magnetischen Felds der Magnetfeldquelle (MGx, MGy, MGz) um einen zweiten Vorrichtungskippwinkel (β) um eine zweite Kippachse (AXy) mechanisch oder elektrisch drehbar ist und
• ▪ wobei der Kristall (HDNV) bevorzugt, aber nicht notwendigerweise, gegenüber der Richtung der magnetischen Flussdichte (B) des magnetischen Felds der Magnetfeldquelle (MGx, MGy, MGz) um einen dritten Vorrichtungskippwinkel (y) um eine dritte Kippachse (AXz) mechanisch oder elektrisch drehbar ist und
• ▪ wobei gleichzeitige translatorische Bewegungen und/oder Bewegungsmöglichkeiten ggf. möglich sein können;
• ▪ Bestrahlen des Kristalls (HDNV) mit Pumpstrahlung (LB), die ggf. mit einer Modulation der Intensität der Pumpstrahlung (LB) in Abhängigkeit von der Modulation eines Modulationssignals (S5) moduliert ist;
• ▪ Erfassen des Fluoreszenzintensitätsmesswerts der Intensität der Fluoreszenzstrahlung (FL) des Kristalls (HDNV) und/oder Erfassen des Fluoreszenzverzögerungsmesswerts der Verzögerung der Modulation der Intensität der Fluoreszenzstrahlung (FL) des Kristalls (HDNV) gegenüber der Modulation der Pumpstrahlung (LB) oder der Modulation des Modulationssignals (S5) oder der Modulation eines daraus abgeleiteten Signals,

gekennzeichnet dadurch

• ▪ dass zwischen der Richtung der paramagnetischen Zentren und der Richtung der magnetischen Flussdichte B ein Kippwinkel besteht und
• ▪ dass die Magnetfeldquelle (MGx, MGy, MGz) am Ort des HD-NV-Diamanten (HDNV) ein Magnetfeld bei einem Kippwinkel von 0° eine magnetische Flussdichte (B) erzeugt, die einer kennzeichnenden magnetischen Flussdichte B eines Fluoreszenzmerkmals entspricht, die zu einem Maximum des Fluoreszenzintensitätsmesswerts innerhalb des Fluoreszenzmerkmals führt und/oder die zu einem Minimum des Fluoreszenzverzögerungsmesswerts innerhalb des Fluoreszenzmerkmals führt,
• ▪ wobei ein Fluoreszenzmerkmal ein Extremum der Fluoreszenzintensitätskurve des Fluoreszenzintensitätsmesswerts der Intensität der Fluoreszenzstrahlung (FL) in Abhängigkeit von dem Betrag der magnetischen Flussdichte (B) am Ort des Kristalls ist, das durch den Betrag der magnetischen Flussdichte B an diesem Extremum gekennzeichnet ist, und/oder
• ▪ wobei das Fluoreszenzmerkmal ein Extremum der Fluoreszenzverzögerungskurve des Fluoreszenzverzögerungsmesswerts der Verzögerung der Modulation der Intensität der Fluoreszenzstrahlung (FL) gegenüber der Modulation der Intensität der Pumpstrahlung (LB) oder gegenüber der Modulation des Modulationssignals (S5) oder der Modulation eines daraus abgeleiteten Signals in Abhängigkeit von dem Betrag der magnetischen Flussdichte (B) am Ort des Kristalls ist, das durch den Betrag der kennzeichnenden magnetischen Flussdichte B an diesem Extremum gekennzeichnet ist, und
• ▪ dass die Änderung des Kippwinkels abweichend von einem Kippwinkel von 0° zur einer Zunahme des Fluoreszenzintensitätsmesswerts der Intensität der Fluoreszenzstrahlung (FL) gegenüber dem Fluoreszenzintensitätsmesswert der Intensität der Fluoreszenzstrahlung (FL) bei einem Kippwinkel von 0° führt und/oder
• ▪ dass die Änderung des Kippwinkels abweichend von einem Kippwinkel von 0° zur einer Abnahme des Fluoreszenzverzögerungsmesswerts der der Verzögerung der Modulation der Intensität der Fluoreszenzstrahlung (FL) gegenüber der Modulation der Intensität der Pumpstrahlung (LB) oder gegenüber der Modulation des Modulationssignals (S5) oder der Modulation eines daraus abgeleiteten Signals gegenüber dem Fluoreszenzverzögerungsmesswert der Verzögerung der Modulation der Intensität der Fluoreszenzstrahlung (FL) gegenüber der Modulation der Intensität der Pumpstrahlung (LB) oder gegenüber der Modulation des Modulationssignals (S5) oder der Modulation eines daraus abgeleiteten Signals bei einem Kippwinkel von 0° führt.

Feature 5: Method for detecting a tilt angle with the steps

• ▪ Providing a magnetic field source (MGx, MGy, MGz);
• ▪ Provision of a crystal (HDNV),
• ▪ wherein the crystal has one or more paramagnetic centers and/or one or more pairs of coupled paramagnetic centers and/or one or more clusters of paramagnetic centers and/or one or more clusters of pairs of coupled paramagnetic centers and/or a diamond and/or a HDNV -diamond range exhibiting the characteristics of an HDNV diamond;
• ▪ where in particular the paramagnetic centers can be coupled to nuclear spins of atoms in the vicinity of paramagnetic centers of these paramagnetic centers,
• ▪ wherein the crystal (HDNV) can be rotated mechanically or electrically by a first device tilt angle (α) about a first tilt axis (AXx) in relation to the direction of the magnetic flux density (B) of the magnetic field of the magnetic field source (MGx, MGy, MGz) and
• ▪ whereby the crystal (HDNV) preferentially, but not necessarily, mechanically or is electrically rotatable and
• ▪ whereby the crystal (HDNV) preferentially, but not necessarily, mechanically or is electrically rotatable and
• ▪ whereby simultaneous translatory movements and/or movement options may be possible;
• ▪ Irradiating the crystal (HDNV) with pump radiation (LB), which is optionally modulated with a modulation of the intensity of the pump radiation (LB) depending on the modulation of a modulation signal (S5);
• ▪ Acquiring the fluorescence intensity reading of the fluorescence radiation (FL) intensity of the crystal (HDNV) and/or acquiring the fluorescence delay measurement of the delay of the modulation of the fluorescence radiation (FL) intensity of the crystal (HDNV) versus the modulation of the pump radiation (LB) or the modulation of the modulation signal (S5) or the modulation of a signal derived from it,

characterized by

• ▪ that there is a tilt angle between the direction of the paramagnetic centers and the direction of the magnetic flux density B and
• ▪ that the magnetic field source (MGx, MGy, MGz) at the location of the HDNV diamond (HDNV) generates a magnetic field at a tilt angle of 0° and a magnetic flux density (B) that corresponds to a characteristic magnetic flux density B of a fluorescence feature that leads to results in a maximum of the fluorescence intensity reading within the fluorescent feature and/or which results in a minimum in the fluorescence delay reading within the fluorescent feature,
• ▪ wherein a fluorescence feature is an extremum of the fluorescence intensity curve of the fluorescence intensity measurement value of the intensity of the fluorescence radiation (FL) as a function of the magnitude of the magnetic flux density (B) at the location of the crystal, which is characterized by the magnitude of the magnetic flux density B at this extremum, and/ or
• ▪ wherein the fluorescence feature is an extremum of the fluorescence delay curve of the fluorescence delay measured value of the delay of the modulation of the intensity of the fluorescence radiation (FL) versus the modulation of the intensity of the pump radiation (LB) or versus the modulation of the modulation signal (S5) or the modulation of a signal derived therefrom depending on is the magnitude of the magnetic flux density (B) at the location of the crystal, characterized by the magnitude of the characteristic magnetic flux density B at that extremum, and
• ▪ that the change in the flip angle deviating from a flip angle of 0° leads to an increase in the fluorescence intensity measured value of the intensity of the fluorescence radiation (FL) compared to the fluorescence intensity measured value of the intensity of the fluorescence radiation (FL) at a flip angle of 0° and/or
• ▪ that the change in the flip angle deviating from a flip angle of 0° leads to a decrease in the fluorescence delay measured value of the delay in the modulation of the intensity of the fluorescence radiation (FL) compared to the modulation of the intensity of the pump radiation (LB) or compared to the modulation of the modulation signal (S5) or the modulation of a signal derived therefrom versus the fluorescence retardation measurement the retardation of the modulation of the intensity of the fluorescence radiation (FL) versus the modulation of the intensity of the pump radiation (LB) or versus the modulation of the modulation signal (S5) or the modulation of a signal derived therefrom at a flip angle of 0° leads.

• ▪ wobei der Kristall (HDNV) Diamant, insbesondere einen HD-NV-Diamanten (HDNV), umfasst und
• ▪ wobei paramagnetische Zentren der paramagnetischen Zentren NV-Zentren und/oder SiV-Zentren und/oder GeV-Zentren und/oder ST1-Zentren und/oder TR12-Zentren umfassen.

Feature 6: Procedure according to feature 0

• ▪ wherein the crystal (HDNV) comprises diamond, in particular a HD-NV diamond (HDNV), and
• ▪ wherein paramagnetic centers of the paramagnetic centers include NV centers and/or SiV centers and/or GeV centers and/or ST1 centers and/or TR12 centers.

• ▪ mit einem Kristall (HDNV),
• ▪ wobei der Kristall ein oder mehrere paramagnetische Zentren und/oder ein oder mehrere Paare gekoppelter paramagnetischer Zentren und/oder ein oder mehrere Cluster paramagnetischer Zentren und/oder ein oder mehrere Cluster von Paaren gekoppelter paramagnetischer Zentren und/oder einen Diamanten und/oder einen HDNV-Diamantbereich, der die Merkmale eines HDNV-Diamanten aufweist, umfasst;
• ▪ wobei insbesondere die paramagnetischen Zentren an nukleare Spins von Atomen in der Umgebung paramagnetischer Zentren dieser paramagnetischen Zentren koppelbar sein können,
• ▪ mit einer Magnetfeldquelle (MGx, MGy, MGz) und
• ▪ mit einer Pumpstrahlungsquelle (LD) und
• ▪ mit einem Fotodetektor (PD) und
• ▪ mit einer Ausrichtungsvorrichtung (DMT, RT, HLT) und
• ▪ mit einer Auswerteeinheit, die insbesondere einen Verstärker und/oder einen Lock-In-Verstärker (LIA) umfassen kann,
• ▪ wobei der Diamant ein paramagnetisches Zentrum aufweist und
• ▪ wobei die Pumpstrahlungsquelle (LD) den Diamanten (HDNV) mit Pumpstrahlung (LB) ggf. in Abhängigkeit von der Modulation eines Modulationssignals (S5) bestrahlt und
• ▪ wobei der Kristall (HDNV) Fluoreszenzstrahlung (FL) emittiert und
• ▪ wobei der Fotodetektor (PD) die Intensität der Fluoreszenzstrahlung (FL) des paramagnetischen Zentrums des Diamanten (HDNV) erfasst und in Abhängigkeit von der Intensität der Fluoreszenzstrahlung (FL) ein Empfangssignal (S0) bildet und
• ▪ wobei die Auswerteinheit, insbesondere ein Verstärker (AMP) und/oder ein Lock-In-Verstärker (LIA), aus dem Empfangssignal (S0) einen Fluoreszenzintensitätsmesswert für die Intensität der Fluoreszenzstrahlung (FL) Kristalls (HDNV) bildet und/oder
• ▪ wobei die Auswerteinheit, insbesondere ein Verstärker (AMP) und/oder ein Lock-In-Verstärker (LIA), aus dem Empfangssignal (S0) einen Fluoreszenzverzögerungsmesswert für die Verzögerung der Modulation der Intensität der Fluoreszenzstrahlung (FL) des Kristalls (HDNV) gegenüber der Modulation der Pumpstrahlung (LB) oder der Modulation des Modulationssignal (S5) oder der Modulation eines daraus abgeleiteten Signals bildet und
• ▪ wobei der Fluoreszenzintensitätsmesswert und/oder der Fluoreszenzverzögerungsmesswert jeweils einen Parameterwert eines jeweiligen Ausgangssignals der Auswerteinheit (LIA) sein können und
• ▪ wobei die Ausrichtungsvorrichtung (DMT, RT, HLT) den Kristall (HDNV) gegenüber der Richtung der magnetischen Flussdichte (B) des magnetischen Felds der Magnetfeldquelle (MGx, MGy, MGz) um einen ersten Vorrichtungskippwinkel (α) um eine erste Kippachse (AXx) mechanisch oder elektrisch verdrehen kann und
• ▪ wobei die Ausrichtungsvorrichtung (DMT, RT, HLT) bevorzugt, aber nicht notwendigerweise, den Kristall (HDNV) gegenüber der Richtung der magnetischen Flussdichte (B) des magnetischen Felds der Magnetfeldquelle (MGx, MGy, MGz) um einen zweiten Vorrichtungskippwinkel (β) um eine zweite Kippachse (AXy) mechanisch oder elektrisch verdrehen kann und
• ▪ wobei die Ausrichtungsvorrichtung (DMT, RT, HLT) bevorzugt, aber nicht notwendigerweise, den Kristall (HDNV) gegenüber der Richtung der magnetischen Flussdichte (B) des magnetischen Felds der Magnetfeldquelle (MGx, MGy, MGz) um einen dritten Vorrichtungskippwinkel (y) um eine dritte Kippachse (AXz) mechanisch oder elektrisch verdrehen kann und
• ▪ wobei die Ausrichtungsvorrichtung (DMT, RT, HLT) optional ggf. den Kristall (HDNV) gleichzeitig translatorisch in eine oder mehr Richtungen bewegen kann und
• ▪ wobei zwischen der Richtung eines oder mehrerer paramagnetischer Zentren des Kristalls (HDNV) und der Richtung der magnetischen Flussdichte B ein Kippwinkel besteht und
• ▪ wobei die Magnetfeldquelle (MGx, MGy, MGz) am Ort des Kristalls (HD-NV) bei einem Kippwinkel von 0° ein Magnetfeld mit einer magnetischen Flussdichte (B) erzeugt, die einer kennzeichnenden magnetischen Flussdichte B eines Fluoreszenzmerkmals entspricht, die zu einer Betragsminderung des Fluoreszenzintensitätsmesswerts infolge eines Intensitätsabfalls der Intensität der Fluoreszenzstrahlung (FL) innerhalb des Fluoreszenzmerkmals führt und die zu einer Betragserhöhung des Fluoreszenzverzögerungsmesswerts infolge eines Verzögerungsanstiegs der Verzögerung der Modulation der Intensität der Fluoreszenzstrahlung (FL) gegenüber der Modulation der Pumpstrahlung (LB) oder der Modulation des Modulationssignals (S5) oder eines daraus abgeleiteten Signals innerhalb des Fluoreszenzmerkmals führt und
• ▪ wobei ein Fluoreszenzmerkmal ein Extremum der Fluoreszenzintensitätskurve der Intensität der Fluoreszenzstrahlung (FL) in Abhängigkeit von dem Betrag der magnetischen Flussdichte (B) am Ort des HD-NV-Diamanten (HDNV) ist, dass durch den Betrag der kennzeichnenden magnetischen Flussdichte B an diesem Extremum gekennzeichnet ist, und/oder
• ▪ wobei das Fluoreszenzmerkmal ein Extremum der Fluoreszenzverzögerungskurve der Verzögerung der Modulation der Intensität der Fluoreszenzstrahlung (FL) gegenüber der Modulation der Intensität der Pumpstrahlung (LB) oder der Modulation des Modulationssignals (S5) oder eines daraus abgeleiteten Signals in Abhängigkeit von dem Betrag der magnetischen Flussdichte (B) am Ort des Kristalls (HDNV) ist, dass durch den Betrag der kennzeichnenden magnetischen Flussdichte B an diesem Extremum gekennzeichnet ist, und
• ▪ wobei die Änderung des Kippwinkels abweichend von einem Kippwinkel von 0° zur einer Betragszunahme des Fluoreszenzintensitätsmesswerts infolge der Zunahme der Intensität der Fluoreszenzstrahlung (FL) gegenüber der der Intensität der Fluoreszenzstrahlung (FL) bei einem Kippwinkel von 0° führt und/oder
• ▪ wobei die Änderung des Kippwinkels abweichend von einem Kippwinkel von 0° zur einer Betragsabnahme des Fluoreszenzverzögerungsmesswerts infolge der Abnahme der Verzögerung der Modulation der Intensität der Fluoreszenzstrahlung (FL) gegenüber der Verzögerung der Modulation der Intensität der Fluoreszenzstrahlung (FL) bezogen auf die Modulation der Intensität der Pumpstrahlung (LB) oder der Modulation des Modulationssignals (S5) oder eines daraus abgeleiteten Signals bei einem Kippwinkel von 0° führt und
• ▪ wobei somit der Fluoreszenzintensitätsmesswert und/oder der Fluoreszenzverzögerungsmesswert von dem Kippwinkel abhängen.

Feature 7: Device for detecting a tilt angle

• ▪ with a crystal (HDNV),
• ▪ wherein the crystal has one or more paramagnetic centers and/or one or more pairs of coupled paramagnetic centers and/or one or more clusters of paramagnetic centers and/or one or more clusters of pairs of coupled paramagnetic centers and/or a diamond and/or a HDNV -diamond range exhibiting the characteristics of an HDNV diamond;
• ▪ where in particular the paramagnetic centers can be coupled to nuclear spins of atoms in the vicinity of paramagnetic centers of these paramagnetic centers,
• ▪ with a magnetic field source (MGx, MGy, MGz) and
• ▪ with a pump radiation source (LD) and
• ▪ with a photodetector (PD) and
• ▪ with an alignment device (DMT, RT, HLT) and
• ▪ with an evaluation unit, which can in particular include an amplifier and/or a lock-in amplifier (LIA),
• ▪ wherein the diamond has a paramagnetic center and
• ▪ wherein the pump radiation source (LD) irradiates the diamond (HDNV) with pump radiation (LB), possibly depending on the modulation of a modulation signal (S5) and
• ▪ wherein the crystal (HDNV) emits fluorescence radiation (FL) and
• ▪ whereby the photodetector (PD) detects the intensity of the fluorescence radiation (FL) of the paramagnetic center of the diamond (HDNV) and forms a received signal (S0) depending on the intensity of the fluorescence radiation (FL) and
• ▪ wherein the evaluation unit, in particular an amplifier (AMP) and/or a lock-in amplifier (LIA), forms a fluorescence intensity measured value for the intensity of the fluorescence radiation (FL) crystal (HDNV) from the received signal (S0) and/or
• ▪ the evaluation unit, in particular an amplifier (AMP) and/or a lock-in amplifier (LIA), from the received signal (S0) a fluorescence delay measured value for the delay of the modulation of the intensity of the fluorescence radiation (FL) of the crystal (HDNV). the modulation of the pump radiation (LB) or the modulation of the modulation signal (S5) or the modulation of a signal derived therefrom and
• ▪ wherein the fluorescence intensity measured value and/or the fluorescence delay measured value can each be a parameter value of a respective output signal of the evaluation unit (LIA) and
• ▪ wherein the alignment device (DMT, RT, HLT) tilts the crystal (HDNV) relative to the direction of the magnetic flux density (B) of the magnetic field of the magnetic field source (MGx, MGy, MGz) by a first device tilt angle (α) about a first tilt axis (AXx ) can rotate mechanically or electrically and
• ▪ whereby the alignment device (DMT, RT, HLT) preferentially, but not necessarily, tilts the crystal (HDNV) to the direction of the magnetic flux density (B) of the magnetic field of the magnetic field source (MGx, MGy, MGz) by a second device tilt angle (β) can twist mechanically or electrically about a second tilting axis (AXy) and
• ▪ where the alignment device (DMT, RT, HLT) prefers, but not necessarily, the crystal (HDNV) to the direction of the magnetic flux density (B) of the magnetic field of the magnetic field source (MGx, MGy, MGz) by a third device tilt angle (y) can twist mechanically or electrically about a third tilting axis (AXz) and
• ▪ wherein the alignment device (DMT, RT, HLT) can optionally translate the crystal (HDNV) simultaneously in one or more directions, if necessary, and
• ▪ where there is a tilt angle between the direction of one or more paramagnetic centers of the crystal (HDNV) and the direction of the magnetic flux density B and
• ▪ where the magnetic field source (MGx, MGy, MGz) at the location of the crystal (HD-NV) at a tilt angle of 0° generates a magnetic field with a magnetic flux density (B) that corresponds to a characteristic magnetic flux density B of a fluorescence feature that leads to a Decreasing the magnitude of the fluorescence intensity reading as a result of a decrease in intensity of the intensity of the fluorescence radiation (FL) within the fluorescence feature and leading to an increase in the magnitude of the fluorescence delay measurement as a result of a delay increase in the delay of the modulation of the intensity of the fluorescence radiation (FL) compared to the modulation of the pump radiation (LB) or the modulation of the Modulation signal (S5) or a signal derived therefrom within the fluorescent feature and
• ▪ where a fluorescence feature is an extremum of the fluorescence intensity curve of the intensity of the fluorescence radiation (FL) as a function of the magnitude of the magnetic flux density (B) at the location of the HD-NV diamond (HDNV), that by the magnitude of the characteristic magnetic flux density B at this extremum is marked, and/or
• ▪ wherein the fluorescence feature is an extremum of the fluorescence delay curve of the delay in the modulation of the intensity of the fluorescence radiation (FL) compared to the modulation of the intensity of the pump radiation (LB) or the modulation of the modulation signal (S5) or a signal derived therefrom as a function of the magnitude of the magnetic flux density (B) at the crystal location (HDNV) is that characterized by the magnitude of the characteristic magnetic flux density B at that extremum, and
• ▪ wherein the change in the flip angle deviating from a flip angle of 0° leads to an increase in the amount of the fluorescence intensity measurement value as a result of the increase in the intensity of the fluorescence radiation (FL) compared to the intensity of the fluorescence radiation (FL) at a flip angle of 0° and/or
• ▪ wherein the change in the flip angle other than a flip angle of 0° results in a decrease in the magnitude of the fluorescence delay measurement value due to the decrease in the delay in the modulation of the intensity of the fluorescence radiation (FL) compared to the delay in the modulation of the intensity of the fluorescence radiation (FL) with respect to the modulation of the intensity the pump radiation (LB) or the modulation of the modulation signal (S5) or a signal derived therefrom at a flip angle of 0° and
• ▪ whereby the fluorescence intensity reading and/or the fluorescence delay reading depend on the tilt angle.

• ▪ wobei der Kristall (HDNV) Diamant, insbesondere einen HD-NV-Diamanten (HDNV), umfasst und
• ▪ wobei paramagnetische Zentren der paramagnetischen Zentren NV-Zentren und/oder SiV-Zentren und/oder GeV-Zentren und/oder ST1-Zentren und/oder TR12-Zentren umfassen.

feature 8: method according to feature 7;

• ▪ wherein the crystal (HDNV) comprises diamond, in particular a HD-NV diamond (HDNV), and
• ▪ wherein paramagnetic centers of the paramagnetic centers include NV centers and/or SiV centers and/or GeV centers and/or ST1 centers and/or TR12 centers.

Characteristics III (calibration procedure in general)

• ▪ Bereitstellen eines Kristalls (HDNV),
• ▪ wobei der Kristall ein oder mehrere paramagnetische Zentren und/oder ein oder mehrere Paare gekoppelter paramagnetischer Zentren und/oder ein oder mehrere Cluster paramagnetischer Zentren und/oder ein oder mehrere Cluster von Paaren gekoppelter paramagnetischer Zentren und/oder einen Diamanten und/oder einen HDNV-Diamantbereich, der die Merkmale eines HDNV-Diamanten aufweist, umfasst;
• ▪ wobei insbesondere die paramagnetischen Zentren an nukleare Spins von Atomen in der Umgebung paramagnetischer Zentren dieser paramagnetischen Zentren koppelbar sein können,
• ▪ Bereitstellen der Magnetfeldquelle (MGx, MGy, MGz),
  • ◯ wobei die Magnetfeldquelle (MGx, MGy, MGz) mittels Magnetfeldquellenparametern gesteuert werden kann und
  • ◯ wobei die magnetische Erregung H der Magnetfeldquelle (MGx, MGy, MGz) von diesen Magnetfeldquellenparametern abhängt;
• ▪ Bestrahlen des Kristalls (HDNV) mit Pumpstrahlung (LB), wobei die Pumpstrahlung (LB) in Abhängigkeit von einem Modulationssignal (S5) in ihrer Intensität moduliert sein kann;
• ▪ Erfassen der Intensität der Fluoreszenzstrahlung (FL) des Kristalls (HDNV) als Fluoreszenzintensitätsmesswert und/oder
• ▪ Erfassen der zeitliche Verzögerung der Modulation der Intensität der Fluoreszenzstrahlung (FL) des Kristalls (HDNV) gegenüber der Modulation der Pumpstrahlung (LB) oder der Modulation des Modulationssignals (S5) oder der Modulation eines daraus abgeleiteten Signals als Fluoreszenzverzögerungsmesswert und/oder
• ▪ ;
  • ◯ wobei die Fluoreszenzintensitätskurve des Fluoreszenzintensitätsmesswerts und/oder die Fluoreszenzverzögerungskurve des Fluoreszenzverzögerungsmesswerts gegen die magnetische Flussdichte B bei kennzeichnenden magnetischen Flussdichten (B) lokale Extrema des Fluoreszenzintensitätsmesswerts und/oder des Fluoreszenzverzögerungsmesswerts als Fluoreszenzmerkmale zeigt,

gekennzeichnet durch die Schritte

• ▪ Änderung der Magnetfeldquellenparameter zur Änderung der Stärke der magnetischen Flussdichte (B), die den HD-NV-Diamanten (HDNV) durchströmt und die von der Magnetfeldquelle (MGx, MGy, MGz) stammt,
• ▪ Erfassung einer Mehrzahl von Fluoreszenzintensitätsmesswerten und/oder einer Mehrzahl von Fluoreszenzverzögerungsmesswerten bei einer Mehrzahl korrespondierender, verschiedener Magnetfeldquellenparameter;
• ▪ Identifikation der Fluoreszenzmerkmale in der Mehrzahl von Fluoreszenzintensitätsmesswerten und/oder in der Mehrzahl von Fluoreszenzverzögerungsmesswerten und Identifikation der Magnetfeldquellenparameter als Magnetfeldquellenparameter, die zu den Fluoreszenzintensitätswerten bzw. Fluoreszenzverzögerungsmesswerten der Fluoreszenzmerkmale korrespondieren;
• ▪ Bestimmung von Korrekturfaktoren einer mathematischen Funktion zur mathematischen Abbildung eines gewünschten Werts einer magnetischen Flussdichte B auf einen Magnetfeldquellenparameter der Magnetfeldquelle,
  • ◯ wobei die mathematische Funktion zur mathematischen Abbildung ein Korrekturpolynom sein kann;
• ▪ Ablegen der Korrekturfaktoren in einem Speicher (NVM).

Feature 9: Method for calibrating a magnetic flux density (B) of a magnetic field source (MGx, MGy, MGz)

• ▪ Provision of a crystal (HDNV),
• ▪ wherein the crystal has one or more paramagnetic centers and/or one or more pairs of coupled paramagnetic centers and/or one or more clusters of paramagnetic centers and/or one or more clusters of pairs of coupled paramagnetic centers and/or a diamond and/or a HDNV -diamond range exhibiting the characteristics of an HDNV diamond;
• ▪ where in particular the paramagnetic centers can be coupled to nuclear spins of atoms in the vicinity of paramagnetic centers of these paramagnetic centers,
• ▪ Provision of the magnetic field source (MGx, MGy, MGz),
  • ◯ where the magnetic field source (MGx, MGy, MGz) can be controlled by means of magnetic field source parameters and
  • ◯ where the magnetic excitation H of the magnetic field source (MGx, MGy, MGz) depends on these magnetic field source parameters;
• ▪ Irradiating the crystal (HDNV) with pump radiation (LB), the pump radiation (LB) being able to be modulated in terms of its intensity as a function of a modulation signal (S5);
• ▪ Recording the intensity of the fluorescence radiation (FL) of the crystal (HDNV) as a fluorescence intensity measurement value and/or
• ▪ Recording the time delay of the modulation of the intensity of the fluorescence radiation (FL) of the crystal (HDNV) compared to the modulation of the pump radiation (LB) or the modulation of the modulation signal (S5) or the modulation of a signal derived therefrom as a fluorescence delay measured value and/or
• ▪ ;
  • ◯ wherein the fluorescence intensity curve of the fluorescence intensity reading and/or the fluorescence delay curve of the fluorescence delay reading versus magnetic flux density B at characteristic magnetic flux densities (B) shows local extrema of the fluorescence intensity reading and/or the fluorescence delay reading as fluorescence features,

characterized by the steps

• ▪ Changing the magnetic field source parameters to change the strength of the magnetic flux density (B) flowing through the HD-NV diamond (HDNV) and coming from the magnetic field source (MGx, MGy, MGz),
• ▪ acquiring a plurality of fluorescence intensity measurements and/or a plurality of fluorescence delay measurements at a plurality of corresponding different magnetic field source parameters;
• ▪ Identifying the fluorescence features in the plurality of fluorescence intensity measurements and/or in the plurality of fluorescence retardation measurements and identifying the magnetic field source parameters as magnetic field source parameters that correspond to the fluorescence intensity values or fluorescence retardation measurements of the fluorescence characteristics;
• ▪ Determination of correction factors of a mathematical function for the mathematical mapping of a desired value of a magnetic flux density B onto a magnetic field source parameter of the magnetic field source,
  • ◯ where the mathematical function for mathematical mapping can be a correction polynomial;
• ▪ Storing the correction factors in a memory (NVM).

• ▪ wobei der Kristall (HDNV) Diamant, insbesondere einen HD-NV-Diamanten (HDNV), umfasst und
• ▪ wobei paramagnetische Zentren der paramagnetischen Zentren NV-Zentren und/oder SiV-Zentren und/oder GeV-Zentren und/oder ST1-Zentren und/oder TR12-Zentren umfassen.

Feature 10: Procedure according to feature 9

• ▪ wherein the crystal (HDNV) comprises diamond, in particular a HD-NV diamond (HDNV), and
• ▪ wherein paramagnetic centers of the paramagnetic centers include NV centers and/or SiV centers and/or GeV centers and/or ST1 centers and/or TR12 centers.

• ▪ Bereitstellen einer der Magnetfeldquelle (B),
• ▪ Bestimmung der Korrekturfaktoren mittels eines Verfahrens nach Merkmals 9 oder 10
• ▪ Vorgeben des Werts einer magnetischen Flussdichte (B);
• ▪ Ermitteln der Magnetfeldquellenparameter der Magnetfeldquelle entsprechend diesem vorgegebenen Wert der magnetischen Flussdichte (B)
• ▪ unter Benutzung der mathematischen Funktion zur mathematischen Abbildung eines gewünschten Werts einer magnetischen Flussdichte (B) auf einen Magnetfeldquellenparameter der Magnetfeldquelle und
• ▪ unter Benutzung der bestimmten Korrekturfaktoren;
• ▪ Einstellen der so ermittelten Magnetfeldquellenparameter der Magnetfeldquelle (MGx, MGy, MGz).

Feature 11: Procedure for setting a calibrated magnetic flux density (B)

• ▪ Providing one of the magnetic field source (B),
• ▪ Determination of the correction factors using a method according to feature 9 or 10
• ▪ specifying the value of a magnetic flux density (B);
• ▪ Determining the magnetic field source parameters of the magnetic field source according to this specified value of the magnetic flux density (B)
• ▪ using the mathematical function to mathematically map a desired value of a magnetic flux density (B) to a magnetic field source parameter of the magnetic field source and
• ▪ using the determined correction factors;
• ▪ Setting the magnetic field source parameters determined in this way for the magnetic field source (MGx, MGy, MGz).

Characteristics IV (process control)

• ▪ wobei das Verfahren eine Steuervorrichtung (STV), die ein oder mehrere Rechnersysteme und/oder Rechnerkerne (CPU) und/oder logische Schaltungen und/oder Speicher (NVM, RAM) und/oder Schnittstellen (DBIF, MDBIF) und Datenbusse (EXTDB, MDB, INTDB) umfassen kann, verwendet und
• ▪ wobei die Steuervorrichtung (STV) das Verfahren nach Merkmal 0 und/oder Merkmal 0 steuert und/oder durchführt und

Feature 12: Procedure according to feature 11

• ▪ wherein the method includes a control device (STV) that has one or more computer systems and/or computer cores (CPU) and/or logic circuits and/or memory (NVM, RAM) and/or interfaces (DBIF, MDBIF) and data buses (EXTDB, MDB, INTDB) can include, used and
• ▪ wherein the control device (STV) controls and/or carries out the method according to feature 0 and/or feature 0 and

• ▪ wobei das Verfahren eine Steuervorrichtung (STV), die ein oder mehrere Rechnersysteme und/oder Rechnerkerne (CPU) und/oder logische Schaltungen und/oder Speicher (NVM, RAM) und/oder Schnittstellen (DBIF, MDBIF) und Datenbusse (EXTDB, MDB, INTDB) umfassen kann, verwendet und
• ▪ wobei eine Steuervorrichtung (STV) ein Verfahren Merkmal 5 und/oder Merkmal 6 steuert und/oder durchführt.

Feature 13: Method according to feature 11 and/or feature 12 and/or feature 0 and/or feature 0,

• ▪ wherein the method includes a control device (STV) that has one or more computer systems and/or computer cores (CPU) and/or logic circuits and/or memory (NVM, RAM) and/or interfaces (DBIF, MDBIF) and data buses (EXTDB, MDB, INTDB) can include, used and
• ▪ wherein a control device (STV) controls and/or executes a feature 5 and/or feature 6 method.

• ▪ wobei das Verfahren eine Steuervorrichtung (STV), die ein oder mehrere Rechnersysteme und/oder Rechnerkerne (CPU) und/oder logische Schaltungen und/oder Speicher (NVM, RAM) und/oder Schnittstellen (DBIF, MDBIF) und Datenbusse (EXTDB, MDB, INTDB) umfassen kann, verwendet und
• ▪ wobei eine Steuervorrichtung (STV) ein Verfahren Merkmal 1 und/oder 2 steuert und/oder durchführt.

Feature 14: Method according to feature 1 and/or feature 2 and/or feature 5 and/or feature 6 and/or feature 11 and/or feature 12 and/or feature 13,

• ▪ wherein the method includes a control device (STV) that has one or more computer systems and/or computer cores (CPU) and/or logic circuits and/or memory (NVM, RAM) and/or interfaces (DBIF, MDBIF) and data buses (EXTDB, MDB, INTDB) can include, used and
• ▪ wherein a control device (STV) controls and/or carries out a method feature 1 and/or 2.

Features V (calibration method 34 mT)

• ▪ Bereitstellen eines Kristalls (HDNV);
• ▪ wobei der Kristall ein oder mehrere paramagnetische Zentren und/oder ein oder mehrere Paare gekoppelter paramagnetischer Zentren und/oder ein oder mehrere Cluster paramagnetischer Zentren und/oder ein oder mehrere Cluster von Paaren gekoppelter paramagnetischer Zentren und/oder einen Diamanten und/oder einen HDNV-Diamantbereich, der die Merkmale eines HDNV-Diamanten aufweist, umfasst;
• ▪ wobei insbesondere die paramagnetischen Zentren an nukleare Spins von Atomen in der Umgebung paramagnetischer Zentren dieser paramagnetischen Zentren koppelbar sein können;
• ▪ Bereitstellen einer Magnetfeldquelle (MGx, MGy, MGz);
• ▪ Bestrahlen des Kristalls (HDNV) mit Pumpstrahlung (LB), deren Intensität ggf. mit der Modulation eines Modulationssignals (S5) moduliert ist;
• ▪ Erfassen des Fluoreszenzintensitätsmesswerts der Intensität der Fluoreszenzstrahlung (FL) des Kristalls (HDNV) und/oder Erfassen des Fluoreszenzverzögerungsmesswerts der Verzögerung der Modulation der Intensität der Fluoreszenzstrahlung (FL) des Kristalls (HDNV) gegenüber der Modulation der Pumpstrahlung (LB) oder der Modulation des Modulationssignals (S5) oder der Modulation eines daraus abgeleiteten Signals,
• ▪ gekennzeichnet durch den Schritt
• ▪ Änderung der Stärke der magnetischen Flussdichte (B), die den Kristall (HDNV) durchströmt, in der Art, dass dann der Wert der magnetische Flussdichte (B) dem Wert der kennzeichnenden magnetischen Flussdichte (B) desjenigen Fluoreszenzmerkmals entspricht, die auf der Kopplung äquivalenter, also insbesondere gleichausgerichteter, gekoppelter Paare paramagnetischer Zentren entspricht.

Feature 15: Method of calibrating a magnetic flux density (B)

• ▪ Providing a crystal (HDNV);
• ▪ wherein the crystal has one or more paramagnetic centers and/or one or more pairs of coupled paramagnetic centers and/or one or more clusters of paramagnetic centers and/or one or more clusters of pairs of coupled paramagnetic centers and/or a diamond and/or a HDNV -diamond range exhibiting the characteristics of an HDNV diamond;
• ▪ where in particular the paramagnetic centers can be coupled to nuclear spins of atoms in the vicinity of paramagnetic centers of these paramagnetic centers;
• ▪ Providing a magnetic field source (MGx, MGy, MGz);
• ▪ Irradiating the crystal (HDNV) with pump radiation (LB), the intensity of which may be modulated with the modulation of a modulation signal (S5);
• ▪ Acquiring the fluorescence intensity reading of the fluorescence radiation (FL) intensity of the crystal (HDNV) and/or acquiring the fluorescence delay measurement of the delay of the modulation of the fluorescence radiation (FL) intensity of the crystal (HDNV) versus the modulation of the pump radiation (LB) or the modulation of the modulation signal (S5) or the modulation of a signal derived from it,
• ▪ identified by the step
• ▪ Changing the strength of the magnetic flux density (B) flowing through the crystal (HDNV) in such a way that the value of the magnetic flux density (B) then corresponds to the value of the characteristic magnetic flux density (B) of that fluorescent feature that is based on the coupling corresponds to equivalent, ie in particular aligned, coupled pairs of paramagnetic centers.

• ▪ wobei der Kristall (HDNV) Diamant, insbesondere einen HD-NV-Diamanten (HDNV), umfasst und
• ▪ wobei paramagnetische Zentren der paramagnetischen Zentren NV-Zentren und/oder SiV-Zentren und/oder GeV-Zentren und/oder ST1-Zentren und/oder TR12-Zentren umfassen.

feature 16: procedure according to feature 15,

• ▪ wherein the crystal (HDNV) comprises diamond, in particular a HD-NV diamond (HDNV), and
• ▪ wherein paramagnetic centers of the paramagnetic centers include NV centers and/or SiV centers and/or GeV centers and/or ST1 centers and/or TR12 centers.

• ▪ Bereitstellen eines Kristalls (HDNV);
• ▪ wobei der Kristall ein oder mehrere paramagnetische Zentren und/oder ein oder mehrere Paare gekoppelter paramagnetischer Zentren und/oder ein oder mehrere Cluster paramagnetischer Zentren und/oder ein oder mehrere Cluster von Paaren gekoppelter paramagnetischer Zentren und/oder einen Diamanten und/oder einen HDNV-Diamantbereich, der die Merkmale eines HDNV-Diamanten aufweist, umfasst;
• ▪ wobei insbesondere die paramagnetischen Zentren an nukleare Spins von Atomen in der Umgebung paramagnetischer Zentren dieser paramagnetischen Zentren koppelbar sein können;
• ▪ wobei der Kristall (HDNV) Diamant, insbesondere einen HD-NV-Diamanten (HDNV), und/oder einen HDNV-Diamantbereich, der die Merkmale eines HD-NV-Diamanten aufweist, umfasst und
• ▪ wobei paramagnetische Zentren der paramagnetischen Zentren NV-Zentren umfassen;
• ▪ Bereitstellen einer Magnetfeldquelle (MGx, MGy, MGz);
• ▪ Bestrahlen des Kristalls (HDNV) mit Pumpstrahlung (LB);
• ▪ Erfassen des Fluoreszenzintensitätsmesswerts der Intensität der Fluoreszenzstrahlung (FL) des Kristalls (HDNV),
• ▪ gekennzeichnet durch den Schritt
• ▪ Änderung der Stärke der magnetischen Flussdichte (B), die den Kristall (HDNV) durchströmt, in der Art, dass der Wert der magnetischen Flussdichte (B) dem Wert der kennzeichnenden magnetischen Flussdichte B des 34mT-Minimums (E_34,0) des Fluoreszenzintensitätsmesswerts der Intensität der Fluoreszenzstrahlung (FL) von 34mT im Wesentlichen entspricht,
  • ◯ wobei das 34mT Minimum (E_34,0) des Fluoreszenzintensitätsmesswerts der Intensität der Fluoreszenzstrahlung (FL) sich dadurch auszeichnet,
  • ◯ dass sich in einem Abstand von ca. 0,84mT zueinander bei einer höheren kennzeichnenden magnetischen Flussdichte (B) bezogen auf das 34mT Minimum (E_34,0) des Fluoreszenzintensitätsmesswerts der Intensität der Fluoreszenzstrahlung (FL) sich ein oberes erstes lokales Extremum (E_34,1b) des Fluoreszenzintensitätsmesswerts der Intensität der Fluoreszenzstrahlung (FL) in Form eines Maximums des Fluoreszenzintensitätsmesswerts der Intensität der Fluoreszenzstrahlung (FL) und bei einer niedrigeren kennzeichnenden magnetischen Flussdichte (B) bezogen auf das 34mT Minimum (E_34,0) des Fluoreszenzintensitätsmesswerts der Intensität der Fluoreszenzstrahlung (FL) sich ein unteres erstes lokales Extremum (E_34,1a) des Fluoreszenzintensitätsmesswerts der Intensität der Fluoreszenzstrahlung (FL) in Form eines Maximums befinden und
  • ◯ dass sich in einem Abstand von ca. 2,01mT zueinander bei einer höheren kennzeichnenden magnetischen Flussdichte (B) bezogen auf das 34mT Minimum (E_34,0) des Fluoreszenzintensitätsmesswerts der Intensität der Fluoreszenzstrahlung (FL) sich ein oberes zweites lokales Extremum (E₃₄,_2b) des Fluoreszenzintensitätsmesswerts der Intensität der Fluoreszenzstrahlung (FL) in Form eines Minimums des Fluoreszenzintensitätsmesswerts der Intensität der Fluoreszenzstrahlung (FL) und bei einer niedrigeren kennzeichnenden magnetischen Flussdichte (B) bezogen auf das 34mT Minimum (E_34,0) des Fluoreszenzintensitätsmesswerts der Intensität der Fluoreszenzstrahlung (FL) sich ein unteres erstes lokales Extremum (E_34,2a) des Fluoreszenzintensitätsmesswerts der Intensität der Fluoreszenzstrahlung (FL) in Form eines Minimums des Fluoreszenzintensitätsmesswerts der Intensität der Fluoreszenzstrahlung (FL) befindet und
  • ◯ dass sich in einem Abstand von ca. 2,70mT zueinander bei einer höheren kennzeichnenden magnetischen Flussdichte (B) bezogen auf das 34mT Minimum (E_34,0) des Fluoreszenzintensitätsmesswerts der Intensität der Fluoreszenzstrahlung (FL) sich ein oberes drittes lokales Extremum (E_34,3b) des Fluoreszenzintensitätsmesswerts der Intensität der Fluoreszenzstrahlung (FL) in Form eines Maximums des Fluoreszenzintensitätsmesswerts der Intensität der Fluoreszenzstrahlung (FL) und bei einer niedrigeren kennzeichnenden magnetischen Flussdichte (B) bezogen auf das 34mT Minimum (E_34,0) des Fluoreszenzintensitätsmesswerts der Intensität der Fluoreszenzstrahlung (FL) sich ein unteres drittes lokales Extremum (E_34,3a) des Fluoreszenzintensitätsmesswerts der Intensität der Fluoreszenzstrahlung (FL) in Form eines Maximums des Fluoreszenzintensitätsmesswerts der Intensität der Fluoreszenzstrahlung (FL) befindet.

Feature 17: Method for calibrating a magnetic flux density (B), in particular according to feature 15 or 16,

• ▪ Providing a crystal (HDNV);
• ▪ wherein the crystal has one or more paramagnetic centers and/or one or more pairs of coupled paramagnetic centers and/or one or more clusters of paramagnetic centers and/or one or more clusters of pairs of coupled paramagnetic centers and/or a diamond and/or a HDNV -diamond range exhibiting the characteristics of an HDNV diamond;
• ▪ where in particular the paramagnetic centers can be coupled to nuclear spins of atoms in the vicinity of paramagnetic centers of these paramagnetic centers;
• ▪ wherein the crystal (HDNV) comprises diamond, in particular a HDNV diamond (HDNV), and/or an HDNV diamond region which has the characteristics of a HDNV diamond and
• ▪ wherein paramagnetic centers of the paramagnetic centers include NV centers;
• ▪ Providing a magnetic field source (MGx, MGy, MGz);
• ▪ Irradiation of the crystal (HDNV) with pump radiation (LB);
• ▪ acquiring the fluorescence intensity reading of the intensity of the fluorescence radiation (FL) of the crystal (HDNV),
• ▪ identified by the step
• ▪ Changing the strength of the magnetic flux density (B) flowing through the crystal (HDNV) in such a way that the value of the magnetic flux density (B) corresponds to the value of the characteristic magnetic flux density B of the 34mT minimum (E _34.0 ) of the fluorescence intensity reading essentially corresponds to the intensity of the fluorescence radiation (FL) of 34mT,
  • ◯ where the 34mT minimum (E _34.0 ) of the fluorescence intensity measurement value of the intensity of the fluorescence radiation (FL) is characterized by
  • ◯ that at a distance of approx. 0.84mT from each other with a higher characteristic magnetic flux density (B) related to the 34mT minimum (E _34.0 ) of the fluorescence intensity measurement value of the intensity of the fluorescence radiation (FL) there is an upper first local extremum (E _34.1b ) of the fluorescence intensity measurement value of the intensity of the fluorescence radiation (FL) in the form of a maximum of the fluorescence intensity measurement value of the intensity of the fluorescence radiation (FL) and at a lower characteristic magnetic flux density (B) related to the 34mT minimum (E _34.0 ) of the fluorescence intensity measurement value of the Intensity of the fluorescence radiation (FL) is a lower first local extremum (E _34.1a ) of the fluorescence intensity measured value of the intensity of the fluorescence radiation (FL) in the form of a maximum and
  • ◯ that at a distance of approx. 2.01mT from each other with a higher characteristic magnetic flux density (B) related to the 34mT minimum (E _34.0 ) of the fluorescence intensity measurement value of the intensity of the fluorescence radiation (FL) there is an upper second local extremum (E ₃₄ , _2b ) of the fluorescence intensity measurement value of the intensity of the fluorescence radiation (FL) in the form of a minimum of the fluorescence intensity measurement value of the intensity of the fluorescence radiation (FL) and at a lower characteristic magnetic flux density (B) related to the 34mT minimum (E _34.0 ) of the fluorescence intensity measurement value of the Intensity of the fluorescence radiation (FL) is a lower first local extremum (E _34.2a ) of the fluorescence intensity measurement value of the intensity of the fluorescence radiation (FL) in the form of a minimum of the fluorescence intensity measurement value of the intensity of the fluorescence radiation (FL) and
  • ◯ that at a distance of approx. 2.70mT from each other with a higher characteristic magnetic flux density (B) related to the 34mT minimum (E _34.0 ) of the fluorescence intensity measurement value of the intensity of the fluorescence radiation (FL) there is an upper third local extremum (E _34,3b ) of the fluorescence intensity measurement value of the intensity of the fluorescence radiation (FL) in the form of a maximum of the fluorescence intensity measurement value of the intensity of the fluorescence radiation (FL) and at a lower characteristic magnetic flux density (B) related to the 34mT minimum (E _34.0 ) of the fluorescence intensity measurement value of the Intensity of the fluorescence radiation (FL) there is a lower, third local extremum (E _34,3a ) of the fluorescence intensity measurement value of the intensity of the fluorescence radiation (FL) in the form of a maximum of the fluorescence intensity measurement value of the intensity of the fluorescence radiation (FL).

• ▪ Voraussagen eines wahrscheinlichen Bereichs für die Magnetfeldquellenparameter der Magnetfeldquelle (MGx, MGy, MGz), in dem diese Magnetfeldquellenparameter der Magnetfeldquelle (MGx, MGy, MGz) sich befinden müssen, um den Wert der magnetischen Flussdichte (B) auf den Wert der kennzeichnenden magnetischen Flussdichte des 34mT Extremums (E_34,0) des Fluoreszenzintensitätsmesswerts der Intensität der Fluoreszenzstrahlung (FL) einzustellen;
• ▪ Einstellen der Magnetfeldquelle (MGx, MGy, MGz) entsprechend dieser Magnetfeldquellenparameter;
• ▪ Variieren der Magnetfeldquellenparameter der Magnetfeldquelle (MGx, MGy, MGz) unter Erfassen der Fluoreszenzstrahlung (FL) und Einstellen des lokalen Minimums des Fluoreszenzintensitätsmesswerts der Intensität der Fluoreszenzstrahlung (FL);

Feature 18: Procedure according to feature 0 with the steps

• ▪ Predict a likely range for the magnetic field source parameters of the magnetic field source (MGx, MGy, MGz) in which these magnetic field source parameters of the magnetic field source (MGx, MGy, MGz) must be located in order to reduce the value of the magnetic flux density (B) to the value of the characteristic magnetic adjust flux density of the 34mT extremum (E _34.0 ) of the fluorescence intensity measurement value of the intensity of the fluorescence radiation (FL);
• ▪ Setting the magnetic field source (MGx, MGy, MGz) according to these magnetic field source parameters;
• ▪ varying the magnetic field source parameters of the magnetic field source (MGx, MGy, MGz) while detecting the fluorescence radiation (FL) and adjusting the local minimum of the fluorescence intensity measurement value of the fluorescence radiation (FL) intensity;

• ▪ Überprüfen, ob es sich bei dem eingestellten Minimum tatsächlich um das 34mT Minimum (E_34,0) des Fluoreszenzintensitätsmesswerts der Intensität der Fluoreszenzstrahlung (FL) handelt;

Feature 19: Method according to feature 18 with the step

• ▪ Check whether the set minimum is actually the 34mT minimum (E _34.0 ) of the fluorescence intensity measurement value of the intensity of the fluorescence radiation (FL);

• ▪ Wiederholen der Schritte des Verfahrens nach Merkmal 18 und 19, wenn das eingestellte Minimum des Fluoreszenzintensitätsmesswerts der Intensität der Fluoreszenzstrahlung (FL) nicht das 34mT Minimum (E_34,0) des Fluoreszenzintensitätsmesswerts der Intensität der Fluoreszenzstrahlung (FL) ist.

Feature 20: Method according to feature 19 with the step

• ▪ repeating the steps of the method of features 18 and 19 if the adjusted minimum fluorescence intensity reading of fluorescence intensity (FL) is not the 34mT minimum (E _34.0 ) fluorescence intensity reading of fluorescence intensity (FL).

• ▪ Bereitstellen eines Kristalls (HDNV);
• ▪ wobei der Kristall ein oder mehrere paramagnetische Zentren und/oder ein oder mehrere Paare gekoppelter paramagnetischer Zentren und/oder ein oder mehrere Cluster paramagnetischer Zentren und/oder ein oder mehrere Cluster von Paaren gekoppelter paramagnetischer Zentren und/oder einen Diamanten und/oder einen HDNV-Diamantbereich, der die Merkmale eines HDNV-Diamanten aufweist, umfasst;
• ▪ wobei insbesondere die paramagnetischen Zentren an nukleare Spins von Atomen in der Umgebung paramagnetischer Zentren dieser paramagnetischen Zentren koppelbar sein können;
• ▪ wobei der Kristall (HDNV) Diamant, insbesondere einen HD-NV-Diamanten (HDNV), und/oder einen HDNV-Diamantbereich, der die Merkmale eines HD-NV-Diamanten aufweist, umfasst und
• ▪ wobei paramagnetische Zentren der paramagnetischen Zentren NV-Zentren umfassen;
• ▪ Bereitstellen einer Magnetfeldquelle (MGx, MGy, MGz);
• ▪ Bestrahlen des Kristalls (HDNV) mit Pumpstrahlung (LB), wobei die Pumpstrahlung (LB) mit der Modulation eines Modulationssignals (S5) moduliert ist;
• ▪ Erfassen des Fluoreszenzverzögerungsmesswerts der Intensität der Fluoreszenzstrahlung (FL) des Kristalls (HDNV) für die zeitliche Verzögerung der Modulation der Intensität der Fluoreszenzstrahlung (FL) des Kristalls (HDNV) gegenüber der Modulation der Intensität der Pumpstrahlung (LB) und /oder dem Modulationssignal (S5) und/oder einem daraus abgeleiteten Signal,
• ▪ gekennzeichnet durch den Schritt
• ▪ Änderung der Stärke der magnetischen Flussdichte (B), die den Kristall (HDNV) durchströmt, in der Art, dass der Wert der magnetischen Flussdichte (B) dem Wert der kennzeichnenden magnetischen Flussdichte B des 34mT-Maximums (E_34,0) des Fluoreszenzverzögerungsmesswerts für die zeitliche Verzögerung der Modulation der Intensität der Fluoreszenzstrahlung (FL) des HD-NV-Diamanten (HDNV) gegenüber der Modulation der Intensität der Pumpstrahlung (LB) und /oder dem Modulationssignal (S5) und/oder einem daraus abgeleiteten Signal von 34,0mT im Wesentlichen entspricht,
• ▪ wobei das 34mT Maximum (E_34,0) des Fluoreszenzverzögerungsmesswerts der zeitlichen Verzögerung der Modulation der Intensität der Fluoreszenzstrahlung (FL) sich dadurch auszeichnet,
  • ◯ dass sich in einem Abstand von ca. 0,84mT zueinander bei einer höheren kennzeichnenden magnetischen Flussdichte (B) bezogen auf das 34mT Maximum (E_34,0) des Fluoreszenzverzögerungsmesswerts für die zeitliche Verzögerung sich ein oberes erstes lokales Extremum (E_34,1b) des Fluoreszenzverzögerungsmesswerts für die zeitliche Verzögerung in Form eines Minimums des Fluoreszenzverzögerungsmesswerts für die zeitliche Verzögerung und bei einer niedrigeren kennzeichnenden magnetischen Flussdichte (B) bezogen auf das 34mT Maximum (E_34,0) des Fluoreszenzverzögerungsmesswerts für die zeitliche Verzögerung sich ein unteres erstes lokales Extremum (E_34,1a) des Fluoreszenzverzögerungsmesswerts für die zeitliche Verzögerung in Form eines Minimums des Fluoreszenzverzögerungsmesswerts für die zeitliche Verzögerung befinden und
  • ◯ dass sich in einem Abstand von ca. 2,01mT zueinander bei einer höheren kennzeichnenden magnetischen Flussdichte (B) bezogen auf das 34mT Maximum (E_34,0) des Fluoreszenzverzögerungsmesswerts für die zeitliche Verzögerung sich ein oberes zweites lokales Extremum (E_34,2b) des Fluoreszenzverzögerungsmesswerts für die zeitliche Verzögerung in Form eines Maximums des Fluoreszenzverzögerungsmesswerts für die zeitliche Verzögerung und bei einer niedrigeren kennzeichnenden magnetischen Flussdichte (B) bezogen auf das 34mT Maximum (E_34,0) des Fluoreszenzverzögerungsmesswerts für die zeitliche Verzögerung sich ein unteres erstes lokales Extremum (E_34,2a) des Fluoreszenzverzögerungsmesswerts für die zeitliche Verzögerung in Form eines Maximums des Fluoreszenzverzögerungsmesswerts für die zeitliche Verzögerung befindet und
  • ◯ dass sich in einem Abstand von ca. 2,70mT zueinander bei einer höheren kennzeichnenden magnetischen Flussdichte (B) bezogen auf das 34mT Maximum (E_34,0) des Fluoreszenzverzögerungsmesswerts für die zeitliche Verzögerung sich ein oberes drittes lokales Extremum (E_34,3b) des Fluoreszenzverzögerungsmesswerts für die zeitliche Verzögerung in Form eines Minimums des Fluoreszenzverzögerungsmesswerts für die zeitliche Verzögerung und bei einer niedrigeren kennzeichnenden magnetischen Flussdichte (B) bezogen auf das 34mT Maximum (E_34,0) des Fluoreszenzverzögerungsmesswerts für die zeitliche Verzögerung sich ein unteres drittes lokales Extremum (E_34,3a) des Fluoreszenzverzögerungsmesswerts für die zeitliche Verzögerung in Form eines Minimums des Fluoreszenzverzögerungsmesswerts für die zeitliche Verzögerung befindet.

Feature 21: Method of calibrating a magnetic flux density (B)

• ▪ Providing a crystal (HDNV);
• ▪ wherein the crystal has one or more paramagnetic centers and/or one or more pairs of coupled paramagnetic centers and/or one or more clusters of paramagnetic centers and/or one or more clusters of pairs of coupled paramagnetic centers and/or a diamond and/or a HDNV -diamond range exhibiting the characteristics of an HDNV diamond;
• ▪ where in particular the paramagnetic centers can be coupled to nuclear spins of atoms in the vicinity of paramagnetic centers of these paramagnetic centers;
• ▪ wherein the crystal (HDNV) comprises diamond, in particular a HDNV diamond (HDNV), and/or an HDNV diamond region which has the characteristics of a HDNV diamond and
• ▪ wherein paramagnetic centers of the paramagnetic centers include NV centers;
• ▪ Providing a magnetic field source (MGx, MGy, MGz);
• ▪ Irradiating the crystal (HDNV) with pump radiation (LB), the pump radiation (LB) being modulated with the modulation of a modulation signal (S5);
• ▪ Acquiring the fluorescence delay measurement of the crystal fluorescence (FL) intensity (HDNV) for the time delay of the modulation of the fluorescence radiation (FL) intensity of the crystal (HDNV) versus the modulation of the intensity of the pump radiation (LB) and/or the modulation signal ( S5) and/or a signal derived therefrom,
• ▪ identified by the step
• ▪ Changing the strength of the magnetic flux density (B) flowing through the crystal (HDNV) in such a way that the value of the magnetic flux density (B) corresponds to the value of the characteristic magnetic flux density B of the 34mT maximum (E _34.0 ) of the Fluorescence delay measurement value for the time delay of the modulation of the intensity of the fluorescence radiation (FL) of the HD-NV diamond (HDNV) compared to the modulation of the intensity of the pump radiation (LB) and/or the modulation signal (S5) and/or a signal derived therefrom from 34 .0mT essentially corresponds to
• ▪ where the 34mT maximum (E _34.0 ) of the fluorescence delay measured value of the time delay of the modulation of the intensity of the fluorescence radiation (FL) is characterized by
  • ◯ that at a distance of approx. 0.84mT from each other with a higher characteristic magnetic flux density (B) related to the 34mT maximum (E _34.0 ) of the fluorescence delay measured value for the time delay, an upper first local extremum (E _34.1b ) fluorescence delay time delay reading in the form of a minimum fluorescence delay time delay reading and at a lower characteristic magnetic flux density (B) relative to the 34mT maximum (E _34.0 ) fluorescence delay time delay reading, a lower first local extremum (E _34,1a ) of the fluorescence delay time lag reading in the form of a minimum of the fluorescence delay time lag reading and
  • ◯ that at a distance of approx. 2.01mT from each other with a higher characteristic magnetic flux density (B) related to the 34mT maximum (E _34.0 ) of the fluorescence delay measured value for the time delay, an upper second local extremum (E _34.2b ) fluorescence delay time delay reading in the form of a maximum fluorescence delay time delay reading and at a lower characteristic magnetic flux density (B) relative to the 34mT maximum (E _34.0 ) fluorescence delay time delay reading, a lower first local extremum (E _34,2a ) of the fluorescence delay time lag reading in the form of a maximum of the fluorescence delay time lag reading and
  • ◯ that at a distance of approx. 2.70mT from each other with a higher characteristic magnetic flux density (B) related to the 34mT maximum (E _34.0 ) of the fluorescence delay measured value for the time delay, an upper third local extremum (E _34.3b ) fluorescence delay time delay reading in the form of a minimum fluorescence delay time delay reading and at a lower characteristic magnetic flux density (B) relative to the 34mT maximum (E _34.0 ) fluorescence delay time delay reading, a lower third local extremum (E _34,3a ) of the fluorescence delay time lag reading in the form of a minimum of the fluorescence delay time lag reading.

• ▪ Voraussagen eines wahrscheinlichen Bereichs für die Magnetfeldquellenparameter der Magnetfeldquelle (MGx, MGy, MGz), in dem diese Magnetfeldquellenparameter der Magnetfeldquelle (MGx, MGy, MGz) sich befinden müssen, um den Wert der magnetischen Flussdichte (B) auf den Wert der kennzeichnenden magnetischen Flussdichte B des 34mT Extremums (E_34,0) des Fluoreszenzverzögerungsmesswerts für die zeitliche Verzögerung einzustellen;
• ▪ Einstellen der Magnetfeldquelle (MGx, MGy, MGz) entsprechend dieser Magnetfeldquellenparameter;
• ▪ Variieren der Magnetfeldquellenparameter der Magnetfeldquelle (MGx, MGy, MGz) unter Erfassen der Fluoreszenzstrahlung (FL) und Einstellen des lokalen Maximums des Fluoreszenzverzögerungsmesswerts für die zeitliche Verzögerung;

Feature 22: Method according to feature 15 with the steps

• ▪ Predict a likely range for the magnetic field source parameters of the magnetic field source (MGx, MGy, MGz) in which these magnetic field source parameters of the magnetic field source (MGx, MGy, MGz) must be located in order to reduce the value of the magnetic flux density (B) to the value of the characteristic magnetic set flux density B of the 34mT extremum (E _34.0 ) of the fluorescence delay reading for the time delay;
• ▪ Setting the magnetic field source (MGx, MGy, MGz) according to these magnetic field source parameters;
• ▪ Varying the magnetic field source parameters of the magnetic field source (MGx, MGy, MGz) while detecting the fluorescence radiation (FL) and adjusting the local maximum of the fluorescence delay measurement value for the time delay;

• ▪ Überprüfen, ob es sich um das 34mT Maximum (E_34,0) des Fluoreszenzverzögerungsmesswerts für die zeitliche Verzögerung handelt;

Feature 23: Method according to feature 22 with the step

• ▪ Verify that it is the 34mT maximum (E _34.0 ) of the fluorescence delay time delay reading;

• ▪ Wiederholen der Schritte des Verfahrens nach Merkmal 0 und Merkmal 0, wenn das eingestellte Maximum des Fluoreszenzverzögerungsmesswerts für die zeitliche Verzögerung nicht das 34mT Maximum (E_34,0) des Fluoreszenzverzögerungsmesswerts für die zeitliche Verzögerung ist.

Feature 24: Method according to feature 23 with the step

• ▪ Repeat the steps of the Feature 0 and Feature 0 procedure if the adjusted maximum fluorescence delay time delay reading is not the 34mT maximum (E _34.0 ) fluorescence delay time delay reading.

Features VI (calibration method 9.5 mT)

• ▪ Bereitstellen eines Kristalls (HDNV);
• ▪ wobei der Kristall ein oder mehrere paramagnetische Zentren und/oder ein oder mehrere Paare gekoppelter paramagnetischer Zentren und/oder ein oder mehrere Cluster paramagnetischer Zentren und/oder ein oder mehrere Cluster von Paaren gekoppelter paramagnetischer Zentren und/oder einen Diamanten und/oder einen HDNV-Diamantbereich, der die Merkmale eines HDNV-Diamanten aufweist, umfasst;
• ▪ wobei insbesondere die paramagnetischen Zentren an nukleare Spins von Atomen in der Umgebung paramagnetischer Zentren dieser paramagnetischen Zentren koppelbar sein können;
• ▪ Bereitstellen einer Magnetfeldquelle (MGx, MGy, MGz);
• ▪ Bestrahlen des Kristalls (HDNV) mit Pumpstrahlung (LB), deren Intensität ggf. mit der Modulation eines Modulationssignals (S5) moduliert ist;
• ▪ Erfassen des Fluoreszenzintensitätsmesswerts der Intensität der Fluoreszenzstrahlung (FL) des Kristalls (HDNV) und/oder Erfassen des Fluoreszenzverzögerungsmesswerts der Verzögerung der Modulation der Intensität der Fluoreszenzstrahlung (FL) des Kristalls (HDNV) gegenüber der Modulation der Pumpstrahlung (LB) oder der Modulation des Modulationssignals (S5) oder der Modulation eines daraus abgeleiteten Signals,
• ▪ gekennzeichnet durch den Schritt
• ▪ Änderung der Stärke der magnetischen Flussdichte (B), die den Kristall (HDNV) durchströmt, in der Art, dass dann der Wert der magnetische Flussdichte (B) dem Wert der kennzeichnenden magnetischen Flussdichte (B) desjenigen Fluoreszenzmerkmals entspricht, die auf den Kopplungsmechanismus zurückzuführen ist, der zu jenem Kopplungsmechanismus analog ist, der bei NV-Zentren in HD-NV-Diamanten im 9,5mT Minimum (E_9.5,0) des Fluoreszenzintensitätsmesswerts der Intensität der Fluoreszenzstrahlung (FL) von NV-Zentren in HD-NV-Diamanten bei Bestrahlung mit für NV-Zentren in HD-NV-Diamanten geeigneter Pumpstrahlung wirksam ist.

Feature 25: Method of calibrating a magnetic flux density (B)

• ▪ Providing a crystal (HDNV);
• ▪ wherein the crystal has one or more paramagnetic centers and/or one or more pairs of coupled paramagnetic centers and/or one or more clusters of paramagnetic centers and/or one or more clusters of pairs of coupled paramagnetic centers and/or a diamond and/or a HDNV -diamond range exhibiting the characteristics of an HDNV diamond;
• ▪ where in particular the paramagnetic centers can be coupled to nuclear spins of atoms in the vicinity of paramagnetic centers of these paramagnetic centers;
• ▪ Providing a magnetic field source (MGx, MGy, MGz);
• ▪ Irradiating the crystal (HDNV) with pump radiation (LB), the intensity of which may be modulated with the modulation of a modulation signal (S5);
• ▪ Acquiring the fluorescence intensity reading of the fluorescence radiation (FL) intensity of the crystal (HDNV) and/or acquiring the fluorescence delay measurement of the delay of the modulation of the fluorescence radiation (FL) intensity of the crystal (HDNV) versus the modulation of the pump radiation (LB) or the modulation of the modulation signal (S5) or the modulation of a signal derived from it,
• ▪ identified by the step
• ▪ Changing the strength of the magnetic flux density (B) flowing through the crystal (HDNV) in such a way that the value of the magnetic flux density (B) then corresponds to the value of the characteristic magnetic flux density (B) of that fluorescence feature that indicates the coupling mechanism which is analogous to the coupling mechanism observed in NV centers in HD-NV diamonds at the 9.5mT minimum (E _9.5.0 ) of the fluorescence intensity reading of the intensity of fluorescence radiation (FL) from NV centers in HD-NV diamond is effective when irradiated with pump radiation suitable for NV centers in HD-NV diamonds.

• ▪ wobei der Kristall (HDNV) Diamant, insbesondere einen HD-NV-Diamanten (HDNV), umfasst und
• ▪ wobei paramagnetische Zentren der paramagnetischen Zentren NV-Zentren und/oder SiV-Zentren und/oder GeV-Zentren und/oder ST1-Zentren und/oder TR12-Zentren umfassen.

Feature 26: procedure according to feature 25,

• ▪ wherein the crystal (HDNV) comprises diamond, in particular a HD-NV diamond (HDNV), and
• ▪ wherein paramagnetic centers of the paramagnetic centers include NV centers and/or SiV centers and/or GeV centers and/or ST1 centers and/or TR12 centers.

• ▪ Bereitstellen eines Kristalls (HDNV);
• ▪ wobei der Kristall ein oder mehrere paramagnetische Zentren und/oder ein oder mehrere Paare gekoppelter paramagnetischer Zentren und/oder ein oder mehrere Cluster paramagnetischer Zentren und/oder ein oder mehrere Cluster von Paaren gekoppelter paramagnetischer Zentren und/oder einen Diamanten und/oder einen HDNV-Diamantbereich, der die Merkmale eines HDNV-Diamanten aufweist, umfasst;
• ▪ wobei insbesondere die paramagnetischen Zentren an nukleare Spins von Atomen in der Umgebung paramagnetischer Zentren dieser paramagnetischen Zentren koppelbar sein können;
• ▪ wobei der Kristall (HDNV) Diamant, insbesondere einen HD-NV-Diamanten (HDNV), und/oder einen HDNV-Diamantbereich, der die Merkmale eines HDNV-Diamanten aufweist, umfasst und
• ▪ wobei paramagnetische Zentren der paramagnetischen Zentren NV-Zentren umfassen;
• ▪ Bereitstellen einer Magnetfeldquelle (MGx, MGy, MGz);
• ▪ Bestrahlen des HD-NV-Diamanten (HDNV) mit Pumpstrahlung (LB);
• ▪ Erfassen des Fluoreszenzintensitätsmesswerts der Intensität der Fluoreszenzstrahlung (FL) des Kristalls (HDNV),
• ▪ gekennzeichnet durch den Schritt
• ▪ Änderung der Stärke der magnetischen Flussdichte (B), die den HD-NV-Diamanten (HDNV) durchströmt, in der Art, dass der Wert der magnetischen Flussdichte (B) dem Wert der kennzeichnenden magnetischen Flussdichte B des 9,5mT-Minimums (E_9.5,0) des Fluoreszenzintensitätsmesswerts der Intensität der Fluoreszenzstrahlung (FL) von 9,9mT im Wesentlichen entspricht,
• ▪ wobei das 9,5mT Minimum (E_9.5,0) des Fluoreszenzintensitätsmesswerts der Intensität der Fluoreszenzstrahlung (FL) sich dadurch auszeichnet,
  • ◯ dass sich in einem Abstand von ca. 1,23mT zueinander bei einer höheren kennzeichnenden magnetischen Flussdichte (B) bezogen auf das 9,5mT Minimum (E_9.5,0) des Fluoreszenzintensitätsmesswerts der Intensität der Fluoreszenzstrahlung (FL) sich ein oberes erstes lokales Extremum (E_9.5,1b) des Fluoreszenzintensitätsmesswerts der Intensität der Fluoreszenzstrahlung (FL) in Form eines Maximums des Fluoreszenzintensitätsmesswerts der Intensität der Fluoreszenzstrahlung (FL) und bei einer niedrigeren kennzeichnenden magnetischen Flussdichte (B) bezogen auf das 9,5mT Minimum (E_9.5,0) des Fluoreszenzintensitätsmesswerts der Intensität der Fluoreszenzstrahlung (FL) sich ein unteres erstes lokales Extremum (E_9.5,1a) des Fluoreszenzintensitätsmesswerts der Intensität der Fluoreszenzstrahlung (FL) in Form eines Maximums des Fluoreszenzintensitätsmesswerts der Intensität der Fluoreszenzstrahlung (FL) befinden und
  • ◯ dass sich in einem Abstand von ca. 2,12mT zueinander bei einer höheren kennzeichnenden magnetischen Flussdichte (B) bezogen auf das 9,5mT Minimum (E_9.5,0) des Fluoreszenzintensitätsmesswerts der Intensität der Fluoreszenzstrahlung (FL) sich ein oberes zweites lokales Extremum (E_9.5,2b) des Fluoreszenzintensitätsmesswerts der Intensität der Fluoreszenzstrahlung (FL) in Form eines Minimums des Fluoreszenzintensitätsmesswerts der Intensität der Fluoreszenzstrahlung (FL) und bei einer niedrigeren kennzeichnenden magnetischen Flussdichte (B) bezogen auf das 9,5mT Minimum (E_9.5,0) des Fluoreszenzintensitätsmesswerts der Intensität der Fluoreszenzstrahlung (FL) sich ein unteres erstes lokales Extremum (E_9.5,2a) des Fluoreszenzintensitätsmesswerts der Intensität der Fluoreszenzstrahlung (FL) in Form eines Minimums des Fluoreszenzintensitätsmesswerts der Intensität der Fluoreszenzstrahlung (FL) befindet und
  • ◯ dass sich in einem Abstand von ca. 2,98mT zueinander bei einer höheren kennzeichnenden magnetischen Flussdichte (B) bezogen auf das 9,5mT Minimum (E_9.5,0) des Fluoreszenzintensitätsmesswerts der Intensität der Fluoreszenzstrahlung (FL) sich ein oberes drittes lokales Extremum (E_9.5,3b) des Fluoreszenzintensitätsmesswerts der Intensität der Fluoreszenzstrahlung (FL) in Form eines Maximums des Fluoreszenzintensitätsmesswerts der Intensität der Fluoreszenzstrahlung (FL) und bei einer niedrigeren kennzeichnenden magnetischen Flussdichte (B) bezogen auf das 9,5mT Minimum (E_9.5,0) des Fluoreszenzintensitätsmesswerts der Intensität der Fluoreszenzstrahlung (FL) sich ein unteres drittes lokales Extremum (E_9.5,3a) des Fluoreszenzintensitätsmesswerts der Intensität der Fluoreszenzstrahlung (FL) in Form eines Maximums des Fluoreszenzintensitätsmesswerts der Intensität der Fluoreszenzstrahlung (FL) befindet.

Feature 27 method for calibrating a magnetic flux density (B), in particular according to feature 25 or 26, with the steps

• ▪ Providing a crystal (HDNV);
• ▪ wherein the crystal has one or more paramagnetic centers and/or one or more pairs of coupled paramagnetic centers and/or one or more clusters of paramagnetic centers and/or one or more clusters of pairs of coupled paramagnetic centers and/or a diamond and/or a HDNV -diamond range exhibiting the characteristics of an HDNV diamond;
• ▪ where in particular the paramagnetic centers can be coupled to nuclear spins of atoms in the vicinity of paramagnetic centers of these paramagnetic centers;
• ▪ wherein the crystal (HDNV) comprises diamond, in particular an HDNV diamond (HDNV), and/or an HDNV diamond region which has the characteristics of an HDNV diamond and
• ▪ wherein paramagnetic centers of the paramagnetic centers include NV centers;
• ▪ Providing a magnetic field source (MGx, MGy, MGz);
• ▪ irradiating the HD-NV diamond (HDNV) with pump radiation (LB);
• ▪ acquiring the fluorescence intensity reading of the intensity of the fluorescence radiation (FL) of the crystal (HDNV),
• ▪ identified by the step
• ▪ Changing the strength of the magnetic flux density (B) flowing through the HD-NV diamond (HDNV) in such a way that the value of the magnetic flux density (B) corresponds to the value of the characteristic magnetic flux density B of the 9.5mT minimum ( E _9.5.0 ) of the fluorescence intensity reading essentially corresponds to the intensity of the fluorescence radiation (FL) of 9.9mT,
• ▪ where the 9.5mT minimum (E _9.5.0 ) of the fluorescence intensity measurement value of the intensity of the fluorescence radiation (FL) is characterized by
  • ◯ that at a distance of approx. 1.23mT from each other with a higher characteristic magnetic flux density (B) related to the 9.5mT minimum (E _9.5.0 ) of the fluorescence intensity measurement value of the intensity of the fluorescence radiation (FL) there is an upper first local extremum (E _9.5.1b ) of the fluorescence intensity measured value of the intensity of the fluorescence radiation (FL) in the form of a maximum of the fluorescence intensity measured value of the intensity of the fluorescence radiation (FL) and at a lower characteristic magnetic flux density (B) related to the 9.5mT minimum (E _9.5.0 ) of the fluorescence intensity measured value of the intensity of the fluorescence radiation (FL) there is a lower first local extremum (E _9.5,1a ) of the fluorescence intensity measured value of the intensity of the fluorescence radiation (FL) in the form of a maximum of the fluorescence intensity measured value of the intensity of the fluorescence radiation (FL) and
  • ◯ that at a distance of approx. 2.12mT from each other with a higher characteristic magnetic flux density (B) related to the 9.5mT minimum (E _9.5.0 ) of the fluorescence intensity measurement value of the intensity of the fluorescence radiation (FL) there is an upper second local extremum (E _9.5.2b ) of the fluorescence intensity measurement value of the intensity of the fluorescence radiation (FL) in the form of a minimum of the fluorescence intensity measurement value of the intensity of the fluorescence radiation (FL) and at a lower characteristic magnetic flux density (B) related to the 9.5mT minimum (E _9.5.0 ) of the fluorescence intensity measured value of the intensity of the fluorescence radiation (FL) a lower first local extremum (E _9.5,2a ) of the fluorescence intensity measured value of the intensity of the fluorescence radiation (FL) in the form of a minimum of the fluorescence intensity measurement value of the intensity of the fluorescence radiation (FL) and
  • ◯ that at a distance of approx. 2.98mT from each other with a higher characteristic magnetic flux density (B) related to the 9.5mT minimum (E _9.5.0 ) of the fluorescence intensity measurement value of the intensity of the fluorescence radiation (FL) there is an upper third local extremum (E _9.5.3b ) of the fluorescence intensity measurement value of the intensity of the fluorescence radiation (FL) in the form of a maximum of the fluorescence intensity measurement value of the intensity of the fluorescence radiation (FL) and at a lower characteristic magnetic flux density (B) related to the 9.5mT minimum (E _9.5.0 ) of the fluorescence intensity measured value of the intensity of the fluorescence radiation (FL) there is a lower third local extremum (E _9.5,3a ) of the fluorescence intensity measured value of the intensity of the fluorescence radiation (FL) in the form of a maximum of the fluorescence intensity measured value of the intensity of the fluorescence radiation (FL).

• ▪ Voraussagen eines wahrscheinlichen Bereichs für die Magnetfeldquellenparameter der Magnetfeldquelle (MGx, MGy, MGz), in dem diese Magnetfeldquellenparameter der Magnetfeldquelle (MGx, MGy, MGz) sich befinden müssen, um den Wert der magnetischen Flussdichte (B) auf den Wert der kennzeichnenden magnetischen Flussdichte des 9,5mT Extremums (E_9.5,0) des Fluoreszenzintensitätsmesswerts der Intensität der Fluoreszenzstrahlung (FL) einzustellen;
• ▪ Einstellen der Magnetfeldquelle (MGx, MGy, MGz) entsprechend dieser Magnetfeldquellenparameter;
• ▪ Variieren der Magnetfeldquellenparameter der Magnetfeldquelle (MGx, MGy, MGz) unter Erfassen der Fluoreszenzstrahlung (FL) und Einstellen des lokalen Minimums des Fluoreszenzintensitätsmesswerts der Intensität der Fluoreszenzstrahlung (FL).

Feature 28: Method according to feature 27 with the steps

• ▪ Predict a likely range for the magnetic field source parameters of the magnetic field source (MGx, MGy, MGz) in which these magnetic field source parameters of the magnetic field source (MGx, MGy, MGz) must be located in order to reduce the value of the magnetic flux density (B) to the value of the characteristic magnetic to adjust the flux density of the 9.5mT extremum (E _9.5.0 ) of the fluorescence intensity measurement value of the intensity of the fluorescence radiation (FL);
• ▪ Setting the magnetic field source (MGx, MGy, MGz) according to these magnetic field source parameters;
• ▪ Varying the magnetic field source parameters of the magnetic field source (MGx, MGy, MGz) while detecting the fluorescence radiation (FL) and adjusting the local minimum of the fluorescence intensity measurement value of the fluorescence radiation (FL) intensity.

• ▪ Überprüfen, ob es sich um das 9.5mT Minimum (E_9.5,0) des Fluoreszenzintensitätsmesswerts der Intensität der Fluoreszenzstrahlung (FL) handelt;

Feature 29: Method according to feature 28 with the step

• ▪ Check whether it is the 9.5mT minimum (E _9.5.0 ) of the fluorescence intensity reading of the intensity of the fluorescence radiation (FL);

• ▪ Wiederholen der Schritte des Verfahrens nach Merkmal 12 und 13, wenn das eingestellte Minimum des Fluoreszenzintensitätsmesswerts der Intensität der Fluoreszenzstrahlung (FL) nicht das 9.5mT Minimum (E_9.5,0) des Fluoreszenzintensitätsmesswerts der Intensität der Fluoreszenzstrahlung (FL) ist.

Feature 30: Method according to feature 29 with the step

• ▪ repeating the steps of the method of feature 12 and 13 if the adjusted minimum fluorescence intensity reading of fluorescence intensity (FL) is not the 9.5mT minimum (E _9.5.0 ) fluorescence intensity reading of fluorescence intensity (FL).

• ▪ Bereitstellen eines Kristalls (HDNV);
• ▪ wobei der Kristall ein oder mehrere paramagnetische Zentren und/oder ein oder mehrere Paare gekoppelter paramagnetischer Zentren und/oder ein oder mehrere Cluster paramagnetischer Zentren und/oder ein oder mehrere Cluster von Paaren gekoppelter paramagnetischer Zentren und/oder einen Diamanten und/oder einen HDNV-Diamantbereich, der die Merkmale eines HDNV-Diamanten aufweist, umfasst;
• ▪ wobei insbesondere die paramagnetischen Zentren an nukleare Spins von Atomen in der Umgebung paramagnetischer Zentren dieser paramagnetischen Zentren koppelbar sein können;
• ▪ wobei der Kristall (HDNV) Diamant, insbesondere einen HD-NV-Diamanten (HDNV), und/oder einen HDNV-Diamantbereich, der die Merkmale eines HD-NV-Diamanten aufweist, umfasst und
• ▪ wobei paramagnetische Zentren der paramagnetischen Zentren NV-Zentren umfassen;
• ▪ Bereitstellen einer Magnetfeldquelle (MGx, MGy, MGz);
• ▪ Bestrahlen des Kristalls (HDNV) mit Pumpstrahlung (LB), wobei die Pumpstrahlung (LB) mit der Modulation eines Modulationssignals (S5) moduliert ist;
• ▪ Erfassen des Fluoreszenzverzögerungsmesswerts der Intensität der Fluoreszenzstrahlung (FL) des Kristalls (HDNV) für die zeitliche Verzögerung der Modulation der Intensität der Fluoreszenzstrahlung (FL) des Kristalls (HDNV) gegenüber der Modulation der Intensität der Pumpstrahlung (LB) und /oder dem Modulationssignal (S5) und/oder einem daraus abgeleiteten Signal,

gekennzeichnet durch die Schritte

• ▪ Änderung der Stärke der magnetischen Flussdichte (B), die den Kristall (HDNV) durchströmt, in der Art, dass der Wert der magnetischen Flussdichte (B) dem Wert der kennzeichnenden magnetischen Flussdichte B des 9,5mT Maximum (E_9.5,0) des Fluoreszenzverzögerungsmesswerts für die zeitliche Verzögerung der Modulation der Intensität der Fluoreszenzstrahlung (FL) des HD-NV-Diamanten (HDNV) gegenüber der Modulation der Intensität der Pumpstrahlung (LB) und /oder dem Modulationssignal (S5) und/oder einem daraus abgeleiteten Signal von 9,5mT im Wesentlichen entspricht,
• ▪ wobei das 9,5mT Maximum (E_9.5,0) des Fluoreszenzverzögerungsmesswerts der zeitlichen Verzögerung der Modulation der Intensität der Fluoreszenzstrahlung (FL) sich dadurch auszeichnet,
  • ◯ dass sich in einem Abstand von ca. 1,23mT zueinander bei einer höheren kennzeichnenden magnetischen Flussdichte (B) bezogen auf das 9,5mT Maximum (E_9.5,0) des Fluoreszenzverzögerungsmesswerts der zeitlichen Verzögerung der Modulation der Intensität der Fluoreszenzstrahlung (FL) sich ein oberes erstes lokales Extremum (E_9,5,1b) des Fluoreszenzverzögerungsmesswerts der zeitlichen Verzögerung der Modulation der Intensität der Fluoreszenzstrahlung (FL) in Form eines Minimums des Fluoreszenzverzögerungsmesswerts der zeitlichen Verzögerung der Modulation der Intensität der Fluoreszenzstrahlung (FL) und bei einer niedrigeren kennzeichnenden magnetischen Flussdichte (B) bezogen auf das 9,5mT Maximum (E_9.5,0) des Fluoreszenzverzögerungsmesswerts der zeitlichen Verzögerung der Modulation der Intensität der Fluoreszenzstrahlung (FL) sich ein unteres erstes lokales Extremum (E_9.5,1a) des Fluoreszenzverzögerungsmesswerts der zeitlichen Verzögerung der Modulation der Intensität der Fluoreszenzstrahlung (FL) in Form eines Minimums des Fluoreszenzverzögerungsmesswerts der zeitlichen Verzögerung der Modulation der Intensität der Fluoreszenzstrahlung (FL) befinden und
  • ◯ dass sich in einem Abstand von ca. 2,12mT zueinander bei einer höheren kennzeichnenden magnetischen Flussdichte (B) bezogen auf das 9,5mT Maximum (E_9.5,0) des Fluoreszenzverzögerungsmesswerts der zeitlichen Verzögerung der Modulation der Intensität der Fluoreszenzstrahlung (FL) sich ein oberes zweites lokales Extremum (E_9.5,2b) des Fluoreszenzverzögerungsmesswerts der zeitlichen Verzögerung der Modulation der Intensität der Fluoreszenzstrahlung (FL) in Form eines Maximums des Fluoreszenzverzögerungsmesswerts der zeitlichen Verzögerung der Modulation der Intensität der Fluoreszenzstrahlung (FL) und bei einer niedrigeren kennzeichnenden magnetischen Flussdichte (B) bezogen auf das 9,5mT Maximum (E_9.5,0) des Fluoreszenzverzögerungsmesswerts der zeitlichen Verzögerung der Modulation der Intensität der Fluoreszenzstrahlung (FL) sich ein unteres erstes lokales Extremum (E_9.5,2a) des Fluoreszenzverzögerungsmesswerts der zeitlichen Verzögerung der Modulation der Intensität der Fluoreszenzstrahlung (FL) in Form eines Maximums des Fluoreszenzverzögerungsmesswerts der zeitlichen Verzögerung der Modulation der Intensität der Fluoreszenzstrahlung (FL) befindet und
  • ◯ dass sich in einem Abstand von ca. 2,98mT zueinander bei einer höheren kennzeichnenden magnetischen Flussdichte (B) bezogen auf das 9,5mT Maximum (E_9.5,0) des Fluoreszenzverzögerungsmesswerts der zeitlichen Verzögerung der Modulation der Intensität der Fluoreszenzstrahlung (FL) sich ein oberes drittes lokales Extremum (E_9,53b) des Fluoreszenzverzögerungsmesswerts der zeitlichen Verzögerung der Modulation der Intensität der Fluoreszenzstrahlung (FL) in Form eines Minimums des Fluoreszenzverzögerungsmesswerts der zeitlichen Verzögerung der Modulation der Intensität der Fluoreszenzstrahlung (FL) und bei einer niedrigeren kennzeichnenden magnetischen Flussdichte (B) bezogen auf das 9,5mT Maximum (E_9.5,0) des Fluoreszenzverzögerungsmesswerts der zeitlichen Verzögerung der Modulation der Intensität der Fluoreszenzstrahlung (FL) sich ein unteres drittes lokales Extremum (E_9,5,3a) des Fluoreszenzverzögerungsmesswerts der zeitlichen Verzögerung der Modulation der Intensität der Fluoreszenzstrahlung (FL) in Form eines Minimums des Fluoreszenzverzögerungsmesswerts der zeitlichen Verzögerung der Modulation der Intensität der Fluoreszenzstrahlung (FL) befindet.

Feature 31: Method for calibrating a magnetic flux density (B), in particular according to features 25 or 26 with the steps

• ▪ Providing a crystal (HDNV);
• ▪ wherein the crystal has one or more paramagnetic centers and/or one or more pairs of coupled paramagnetic centers and/or one or more clusters of paramagnetic centers and/or one or more clusters of pairs of coupled paramagnetic centers and/or a diamond and/or a HDNV -diamond range exhibiting the characteristics of an HDNV diamond;
• ▪ where in particular the paramagnetic centers can be coupled to nuclear spins of atoms in the vicinity of paramagnetic centers of these paramagnetic centers;
• ▪ wherein the crystal (HDNV) comprises diamond, in particular a HDNV diamond (HDNV), and/or an HDNV diamond region which has the characteristics of a HDNV diamond and
• ▪ wherein paramagnetic centers of the paramagnetic centers include NV centers;
• ▪ Providing a magnetic field source (MGx, MGy, MGz);
• ▪ Irradiating the crystal (HDNV) with pump radiation (LB), the pump radiation (LB) being modulated with the modulation of a modulation signal (S5);
• ▪ Acquiring the fluorescence delay measurement of the crystal fluorescence (FL) intensity (HDNV) for the time delay of the modulation of the fluorescence radiation (FL) intensity of the crystal (HDNV) versus the modulation of the intensity of the pump radiation (LB) and/or the modulation signal ( S5) and/or a signal derived therefrom,

characterized by the steps

• ▪ Changing the strength of the magnetic flux density (B) flowing through the crystal (HDNV) in such a way that the value of the magnetic flux density (B) corresponds to the value of the characteristic magnetic flux density B of the 9.5mT maximum (E _9.5.0 ) the fluorescence delay measurement value for the time delay of the modulation of the intensity of the fluorescence radiation (FL) of the HD-NV diamond (HDNV) compared to the modulation of the intensity of the pump radiation (LB) and/or the modulation signal (S5) and/or a signal derived therefrom from 9.5mT essentially corresponds,
• ▪ where the 9.5mT maximum (E _9.5.0 ) of the fluorescence delay measured value of the time delay of the modulation of the intensity of the fluorescence radiation (FL) is characterized by
  • ◯ that at a distance of approx. 1.23mT from each other at a higher characteristic magnetic flux density (B) related to the 9.5mT maximum (E _9.5.0 ) of the fluorescence delay measured value of the time delay of the modulation of the intensity of the fluorescence radiation (FL). an upper first local extremum (E _9,5,1b ) of the fluorescence delay measurement of the time delay of the modulation of the fluorescence radiation (FL) intensity in the form of a minimum of the fluorescence delay measurement of the time delay of the modulation of the intensity of the fluorescence radiation (FL) and at a lower characteristic magnetic flux density (B) related to the 9.5mT maximum (E _9.5.0 ) of the fluorescence delay measured value of the time delay of the modulation of the intensity of the fluorescence radiation (FL) there is a lower first local extremum (E _9.5.1a ) of the fluorescence delay measured value of the time delay of the Fluores intensity modulation fluorescence radiation (FL) in the form of a minimum of the fluorescence delay measurement value of the time delay of the modulation of the intensity of the fluorescence radiation (FL) and
  • ◯ that at a distance of approx. 2.12mT from each other at a higher characteristic magnetic flux density (B) related to the 9.5mT maximum (E _9.5.0 ) of the fluorescence delay measured value of the time delay of the modulation of the intensity of the fluorescence radiation (FL). an upper second local extremum (E _9.5,2b ) of the fluorescence delay measured value of the time delay of the modulation of the intensity of the fluorescence radiation (FL) in the form of a maximum of the fluorescence delay measured value of the time delay of the modulation of the intensity of the fluorescence radiation (FL) and at a lower characteristic magnetic flux density (B) related to the 9.5mT maximum (E _9.5.0 ) of the fluorescence delay measured value of the time delay of the modulation of the intensity of the fluorescence radiation (FL), a lower first local extremum (E _9.5.2a ) of the fluorescence delay measured value of the time delay of the modulation of the Intensity of the fluors fluorescence radiation (FL) in the form of a maximum of the fluorescence delay measurement value of the time delay of the modulation of the intensity of the fluorescence radiation (FL) and
  • ◯ that at a distance of approx. 2.98mT from each other at a higher characteristic magnetic flux density (B) related to the 9.5mT maximum (E _9.5.0 ) of the fluorescence delay measured value of the time delay of the modulation of the intensity of the fluorescence radiation (FL). an upper third local extremum (E _9,53b ) of the fluorescence delay measurement of the time delay of the modulation of the intensity of fluorescence radiation (FL) in the form of a minimum of the fluorescence delay measurement of the time delay of the modulation of the intensity of the fluorescence radiation (FL) and at a lower characteristic magnetic flux density (B) related to the 9.5mT maximum (E _9.5.0 ) of the fluorescence delay measurement of the time delay of the modulation of the intensity of the fluorescence radiation (FL), a lower third local extremum (E _9.5.3a ) of the fluorescence delay measurement of the time delay of the Modulation of the intensity of the fluors fluorescence radiation (FL) in the form of a minimum of the fluorescence delay measurement value of the time delay of the modulation of the intensity of the fluorescence radiation (FL).

• ▪ Voraussagen eines wahrscheinlichen Bereichs für die Magnetfeldquellenparameter der Magnetfeldquelle (MGx, MGy, MGz), in dem diese Magnetfeldquellenparameter der Magnetfeldquelle (MGx, MGy, MGz) sich befinden müssen, um die magnetischen Flussdichte (B) auf den Wert des 9,5mT Extremums (E_9.5,0) des Fluoreszenzverzögerungsmesswerts der zeitlichen Verzögerung der Modulation der Intensität der Fluoreszenzstrahlung (FL) einzustellen;
• ▪ Einstellen der Magnetfeldquelle (MGx, MGy, MGz) entsprechend dieser Magnetfeldquellenparameter;
• ▪ Variieren der Magnetfeldquellenparameter der Magnetfeldquelle (MGx, MGy, MGz) unter Erfassen der Fluoreszenzstrahlung (FL) und Einstellen des lokalen Maximums des Fluoreszenzverzögerungsmesswerts der zeitlichen Verzögerung der Modulation der Intensität der Fluoreszenzstrahlung (FL).

Feature 32: Method according to feature 31 with the steps

• ▪ Predicting a probable range for the magnetic field source parameters of the magnetic field source (MGx, MGy, MGz), in which these magnetic field source parameters of the magnetic field source (MGx, MGy, MGz) must be located in order to reduce the magnetic flux density (B) to the value of the 9.5mT extremum adjusting (E _9.5,0 ) the fluorescence delay measurement of the time delay of the modulation of the intensity of the fluorescence radiation (FL);
• ▪ Setting the magnetic field source (MGx, MGy, MGz) according to these magnetic field source parameters;
• ▪ Varying the magnetic field source parameters of the magnetic field source (MGx, MGy, MGz) detecting the fluorescence radiation (FL) and adjusting the local maximum of the fluorescence delay measurement of the time delay of the modulation of the intensity of the fluorescence radiation (FL).

• ▪ Überprüfen, ob es sich um das 9.5mT Maximum (E_9.5,0) des Fluoreszenzverzögerungsmesswerts der zeitlichen Verzögerung der Modulation der Intensität der Fluoreszenzstrahlung (FL) handelt;

Feature 33: Method according to feature 32 with the step

• ▪ Verify that it is the 9.5mT maximum (E _9.5.0 ) of the fluorescence delay measurement of the fluorescence (FL) intensity modulation time delay;

• ▪ Wiederholen der Schritte des Verfahrens nach Merkmal 32 und 33, wenn das eingestellte Maximum des Fluoreszenzverzögerungsmesswerts der zeitlichen Verzögerung der Modulation der Intensität der Fluoreszenzstrahlung (FL) nicht das 9.5mT Maximum (E_9.5,0) des Fluoreszenzverzögerungsmesswerts der zeitlichen Verzögerung der Modulation der Intensität der Fluoreszenzstrahlung (FL) ist.

Feature 34: Method according to feature 33 with the step

• Repeating the steps of the method of feature 32 and 33 if the adjusted maximum fluorescence delay time delay measurement of fluorescence intensity modulation (FL) intensity is not the 9.5mT maximum (E _9.5.0 ) fluorescence delay time measurement of fluorescence intensity modulation delay of fluorescence radiation (FL).

Features VII (calibration method 102.4 mT)

• ▪ Bereitstellen eines Kristalls (HDNV);
• ▪ wobei der Kristall ein oder mehrere paramagnetische Zentren und/oder ein oder mehrere Paare gekoppelter paramagnetischer Zentren und/oder ein oder mehrere Cluster paramagnetischer Zentren und/oder ein oder mehrere Cluster von Paaren gekoppelter paramagnetischer Zentren und/oder einen Diamanten und/oder einen HDNV-Diamantbereich, der die Merkmale eines HDNV-Diamanten aufweist, umfasst und
• ▪ wobei insbesondere die paramagnetischen Zentren an nukleare Spins von Atomen in der Umgebung paramagnetischer Zentren dieser paramagnetischen Zentren koppelbar sein können;
• ▪ Bereitstellen einer Magnetfeldquelle (MGx, MGy, MGz);
• ▪ Bestrahlen des Kristalls (HDNV) mit Pumpstrahlung (LB), deren Intensität ggf. mit der Modulation eines Modulationssignals (S5) moduliert ist;
• ▪ Erfassen des Fluoreszenzintensitätsmesswerts der Intensität der Fluoreszenzstrahlung (FL) des Kristalls (HDNV) und/oder Erfassen des Fluoreszenzverzögerungsmesswerts der Verzögerung der Modulation der Intensität der Fluoreszenzstrahlung (FL) des Kristalls (HDNV) gegenüber der Modulation der Pumpstrahlung (LB) oder der Modulation des Modulationssignals (S5) oder der Modulation eines daraus abgeleiteten Signals,
• ▪ gekennzeichnet durch den Schritt
• ▪ Änderung der Stärke der magnetischen Flussdichte (B), die den Kristall (HDNV) durchströmt, in der Art, dass dann der Wert der magnetische Flussdichte (B) dem Wert der kennzeichnenden magnetischen Flussdichte (B) desjenigen Fluoreszenzmerkmals entspricht, die die einem Ground State Level Anti Crossing (GSLAC) eines Paars ausgerichteter gekoppelter paramagnetischer Zentren entspricht.

Feature 35: Method of calibrating a magnetic flux density (B)

• ▪ Providing a crystal (HDNV);
• ▪ wherein the crystal has one or more paramagnetic centers and/or one or more pairs of coupled paramagnetic centers and/or one or more clusters of paramagnetic centers and/or one or more clusters of pairs of coupled paramagnetic centers and/or a diamond and/or a HDNV -A range of diamonds exhibiting the characteristics of an HDNV diamond, and
• ▪ where in particular the paramagnetic centers can be coupled to nuclear spins of atoms in the vicinity of paramagnetic centers of these paramagnetic centers;
• ▪ Providing a magnetic field source (MGx, MGy, MGz);
• ▪ Irradiating the crystal (HDNV) with pump radiation (LB), the intensity of which may be modulated with the modulation of a modulation signal (S5);
• ▪ Acquiring the fluorescence intensity reading of the fluorescence radiation (FL) intensity of the crystal (HDNV) and/or acquiring the fluorescence delay measurement of the delay of the modulation of the fluorescence radiation (FL) intensity of the crystal (HDNV) versus the modulation of the pump radiation (LB) or the modulation of the modulation signal (S5) or the modulation of a signal derived from it,
• ▪ identified by the step
• ▪ Changing the strength of the magnetic flux density (B) flowing through the crystal (HDNV) in such a way that the value of the magnetic flux density (B) then corresponds to the value of the characteristic magnetic flux density (B) of that fluorescence feature that corresponds to a Ground State Level Anti Crossing (GSLAC) of a pair of aligned coupled paramagnetic centers.

• ▪ wobei Wert der kennzeichnenden magnetischen Flussdichte (B) desjenigen Fluoreszenzmerkmals entspricht, die die einem Ground State Level Anti Crossing (GSLAC) des Paars ausgerichteter gekoppelter paramagnetischer Zentren entspricht, bei dem nur eines der beiden paramagnetischen Zentren des Paars ausgerichteter gekoppelter paramagnetischer Zentren im |0>-Zustand hyperpolarisiert ist.

Feature 36: Method for calibrating a magnetic flux density (B) according to feature 35

• ▪ where value corresponds to the characteristic magnetic flux density (B) of the fluorescence feature corresponding to a Ground State Level Anti Crossing (GSLAC) of the pair of aligned coupled paramagnetic centers where only one of the two paramagnetic centers of the pair of aligned coupled paramagnetic centers in the |0 > state is hyperpolarized.

• ▪ wobei der Kristall (HDNV) Diamant, insbesondere einen HD-NV-Diamanten (HDNV), umfasst und
• ▪ wobei paramagnetische Zentren der paramagnetischen Zentren NV-Zentren und/oder SiV-Zentren und/oder GeV-Zentren und/oder ST1-Zentren und/oder TR12-Zentren umfassen.

Feature 37: Procedure according to feature 36

• ▪ wherein the crystal (HDNV) comprises diamond, in particular a HD-NV diamond (HDNV), and
• ▪ wherein paramagnetic centers of the paramagnetic centers include NV centers and/or SiV centers and/or GeV centers and/or ST1 centers and/or TR12 centers.

• ▪ Bereitstellen eines Kristalls (HDNV);
• ▪ wobei der Kristall ein oder mehrere paramagnetische Zentren und/oder ein oder mehrere Paare gekoppelter paramagnetischer Zentren und/oder ein oder mehrere Cluster paramagnetischer Zentren und/oder ein oder mehrere Cluster von Paaren gekoppelter paramagnetischer Zentren und/oder einen Diamanten und/oder einen HDNV-Diamantbereich, der die Merkmale eines HDNV-Diamanten aufweist, umfasst und
• ▪ wobei insbesondere die paramagnetischen Zentren an nukleare Spins von Atomen in der Umgebung paramagnetischer Zentren dieser paramagnetischen Zentren koppelbar sein können und
• ▪ wobei der Kristall (HDNV) Diamant, insbesondere einen HD-NV-Diamanten (HDNV), und/oder einen HDNV-Diamantbereich, der die Merkmale eines HD-NV-Diamanten aufweist, umfasst und
• ▪ wobei paramagnetische Zentren der paramagnetischen Zentren NV-Zentren umfassen;
• ▪ Bereitstellen einer Magnetfeldquelle (MGx, MGy, MGz);
• ▪ Bestrahlen des Kristalls (HDNV) mit Pumpstrahlung (LB);
• ▪ Erfassen des Fluoreszenzintensitätsmesswerts der Intensität der Fluoreszenzstrahlung (FL) des Kristalls (HDNV),
• ▪ gekennzeichnet dadurch
• ▪ Änderung der Stärke der magnetischen Flussdichte (B), die den Kristall (HDNV) durchströmt, in der Art, dass der Wert der magnetischen Flussdichte (B) dem Wert der kennzeichnenden magnetischen Flussdichte B des 102,4mT Minimum (E_102.4,0) des Fluoreszenzintensitätsmesswerts der Intensität der Fluoreszenzstrahlung (FL) von 102,4mT im Wesentlichen entspricht,
• ▪ wobei das 120.4mT Minimum (E_120.4,0) des Fluoreszenzintensitätsmesswerts der Intensität der Fluoreszenzstrahlung (FL) sich dadurch auszeichnet,
  • ◯ dass sich in einem Abstand von ca. 1,30mT zueinander bei einer höheren kennzeichnenden magnetischen Flussdichte (B) bezogen auf das 120,4 mT Minimum (E_120.4,0) des Fluoreszenzintensitätsmesswerts der Intensität der Fluoreszenzstrahlung (FL) ein oberes erstes lokales Extremum (E_120.4,1b) des Fluoreszenzintensitätsmesswerts der Intensität der Fluoreszenzstrahlung (FL) in Form eines Maximums des Fluoreszenzintensitätsmesswerts der Intensität der Fluoreszenzstrahlung (FL) und bei einer niedrigeren kennzeichnenden magnetischen Flussdichte (B) bezogen auf das 120,4mT Minimum (E_120.4,0) des Fluoreszenzintensitätsmesswerts der Intensität der Fluoreszenzstrahlung (FL) sich ein unteres erstes lokales Extremum (E_120.4,1a) des Fluoreszenzintensitätsmesswerts der Intensität der Fluoreszenzstrahlung (FL) in Form eines Maximums des Fluoreszenzintensitätsmesswerts der Intensität der Fluoreszenzstrahlung (FL) befinden und
  • ◯ dass sich in einem Abstand von ca. 2,70mT zueinander bei einer höheren kennzeichnenden magnetischen Flussdichte (B) bezogen auf das 120,4 mT Minimum (E_120.4,0) des Fluoreszenzintensitätsmesswerts der Intensität der Fluoreszenzstrahlung (FL) ein oberes zweites lokales Extremum (E_120.4,2b) des Fluoreszenzintensitätsmesswerts der Intensität der Fluoreszenzstrahlung (FL) in Form eines Minimums des Fluoreszenzintensitätsmesswerts der Intensität der Fluoreszenzstrahlung (FL) und bei einer niedrigeren kennzeichnenden magnetischen Flussdichte (B) bezogen auf das 120,4 mT Minimum (E_120.4,0) des Fluoreszenzintensitätsmesswerts der Intensität der Fluoreszenzstrahlung (FL) sich ein unteres erstes lokales Extremum (E_120.4,2a) des Fluoreszenzintensitätsmesswerts der Intensität der Fluoreszenzstrahlung (FL) in Form eines Minimums des Fluoreszenzintensitätsmesswerts der Intensität der Fluoreszenzstrahlung (FL) befindet und
  • ◯ dass sich in einem Abstand von ca. 4,7mT zueinander bei einer höheren kennzeichnenden magnetischen Flussdichte (B) bezogen auf das 120,4 mT Minimum (E_120.4,0) des Fluoreszenzintensitätsmesswerts der Intensität der Fluoreszenzstrahlung (FL) ein oberes drittes lokales Extremum (E_120.4,3b) des Fluoreszenzintensitätsmesswerts der Intensität der Fluoreszenzstrahlung (FL) in Form eines Maximums des Fluoreszenzintensitätsmesswerts der Intensität der Fluoreszenzstrahlung (FL) und bei einer niedrigeren kennzeichnenden magnetischen Flussdichte (B) bezogen auf das 120,4mT Minimum (E_120.4,0) des Fluoreszenzintensitätsmesswerts der Intensität der Fluoreszenzstrahlung (FL) sich ein unteres drittes lokales Extremum (E_120.4,3a) des Fluoreszenzintensitätsmesswerts der Intensität der Fluoreszenzstrahlung (FL) in Form eines Maximums des Fluoreszenzintensitätsmesswerts der Intensität der Fluoreszenzstrahlung (FL) befindet.

Feature 38: Method for calibrating a magnetic flux density (B), in particular according to one or more of features 35 to 37, with the steps

• ▪ Providing a crystal (HDNV);
• ▪ wherein the crystal has one or more paramagnetic centers and/or one or more pairs of coupled paramagnetic centers and/or one or more clusters of paramagnetic centers and/or one or more clusters of pairs of coupled paramagnetic centers and/or a diamond and/or a HDNV -A range of diamonds exhibiting the characteristics of an HDNV diamond, and
• ▪ whereby in particular the paramagnetic centers can be coupled to nuclear spins of atoms in the vicinity of paramagnetic centers of these paramagnetic centers and
• ▪ wherein the crystal (HDNV) comprises diamond, in particular a HDNV diamond (HDNV), and/or an HDNV diamond region which has the characteristics of a HDNV diamond and
• ▪ wherein paramagnetic centers of the paramagnetic centers include NV centers;
• ▪ Providing a magnetic field source (MGx, MGy, MGz);
• ▪ Irradiation of the crystal (HDNV) with pump radiation (LB);
• ▪ acquiring the fluorescence intensity reading of the intensity of the fluorescence radiation (FL) of the crystal (HDNV),
• ▪ characterized by
• ▪ Changing the strength of the magnetic flux density (B) flowing through the crystal (HDNV) in such a way that the value of the magnetic flux density (B) corresponds to the value of the characteristic magnetic flux density B of the 102.4mT minimum (E _102.4.0 ) the fluorescence intensity reading essentially corresponds to the intensity of the fluorescence radiation (FL) of 102.4mT,
• ▪ where the 120.4mT minimum (E _120.4.0 ) of the fluorescence intensity measurement value of the intensity of the fluorescence radiation (FL) is characterized by
  • ◯ that at a distance of approx. 1.30mT from each other with a higher characteristic magnetic flux density (B) related to the 120.4 mT minimum (E _120.4.0 ) of the fluorescence intensity measurement value of the intensity of the fluorescence radiation (FL) there is an upper first local extremum (E _120.4,1b ) of the fluorescence intensity measurement value of the intensity of the fluorescence radiation (FL) in the form of a maximum of the fluorescence intensity measurement value of the intensity of the fluorescence radiation (FL) and at a lower characteristic magnetic flux density (B) related to the 120.4mT minimum (E _120.4.0 ) of the fluorescence intensity measured value of the intensity of the fluorescence radiation (FL) there is a lower first local extremum (E _120.4,1a ) of the fluorescence intensity measured value of the intensity of the fluorescence radiation (FL) in the form of a maximum of the fluorescence intensity measured value of the intensity of the fluorescence radiation (FL) and
  • ◯ that at a distance of approx. 2.70mT from each other with a higher characteristic magnetic flux density (B) related to the 120.4 mT minimum (E _120.4.0 ) of the fluorescence intensity measurement value of the intensity of the fluorescence radiation (FL) there is an upper second local extremum (E _120.4,2b ) the fluorescence intensity measurement value of the intensity of the fluorescence radiation (FL) in the form of a minimum of the fluorescence intensity measurement value of the intensity of the fluorescence radiation (FL) and at a lower characteristic magnetic flux density (B) related to the 120.4 mT minimum (E _{120.4, 0} ) of the fluorescence intensity measurement value of the intensity of the fluorescence radiation (FL) there is a lower first local extremum (E _120.4,2a ) of the fluorescence intensity measurement value of the intensity of the fluorescence radiation (FL) in the form of a minimum of the fluorescence intensity measurement value of the intensity of the fluorescence radiation (FL) and
  • ◯ that at a distance of approx. 4.7mT from each other with a higher characteristic magnetic flux density (B) related to the 120.4 mT minimum (E _120.4.0 ) of the fluorescence intensity measurement value of the intensity of the fluorescence radiation (FL) there is an upper third local extremum (E _120.4,3b ) of the fluorescence intensity reading of the intensity of the fluorescence radiation (FL) in the form of a maximum of the fluorescence intensity reading of the intensity of the fluorescence radiation (FL) and at a lower characteristic magnetic flux density (B) related to the 120.4mT minimum (E _120.4.0 ) of the fluorescence intensity measured value of the intensity of the fluorescence radiation (FL) there is a lower third local extremum (E _120.4,3a ) of the fluorescence intensity measured value of the intensity of the fluorescence radiation (FL) in the form of a maximum of the fluorescence intensity measured value of the intensity of the fluorescence radiation (FL).

• ▪ Voraussagen eines wahrscheinlichen Bereichs für die Magnetfeldquellenparameter der Magnetfeldquelle (MGx, MGy, MGz), in dem diese Magnetfeldquellenparameter der Magnetfeldquelle (MGx, MGy, MGz) sich befinden müssen, um die magnetischen Flussdichte (B) auf den Wert der kennzeichnenden magnetischen Flussdichte des 102,4 mT Extremums (E_120.4,0) des Fluoreszenzintensitätsmesswerts der Intensität der Fluoreszenzstrahlung (FL) einzustellen;
• ▪ Einstellen der Magnetfeldquelle (MGx, MGy, MGz) entsprechend dieser Magnetfeldquellenparameter;
• ▪ Variieren der Magnetfeldquellenparameter der Magnetfeldquelle (MGx, MGy, MGz) unter Erfassen der Fluoreszenzstrahlung (FL) und Einstellen des lokalen Minimums des Fluoreszenzintensitätsmesswerts der Intensität der Fluoreszenzstrahlung (FL).

Feature 39 Method according to feature 35 with the steps

• ▪ Predicting a likely range for the magnetic field source parameters of the magnetic field source (MGx, MGy, MGz) in which these magnetic field source parameters of the magnetic field source (MGx, MGy, MGz) must be located in order to reduce the magnetic flux density (B) to the value of the characteristic magnetic flux density of the set 102.4 mT extremum (E _120.4.0 ) of the fluorescence intensity measurement value of the intensity of the fluorescence radiation (FL);
• ▪ Setting the magnetic field source (MGx, MGy, MGz) according to these magnetic field source parameters;
• ▪ Varying the magnetic field source parameters of the magnetic field source (MGx, MGy, MGz) while detecting the fluorescence radiation (FL) and adjusting the local minimum of the fluorescence intensity measurement value of the fluorescence radiation (FL) intensity.

• ▪ Überprüfen, ob es sich um das 102.4mT Minimum (E_102.4,0) des Fluoreszenzintensitätsmesswerts der Intensität der Fluoreszenzstrahlung (FL) handelt;

Feature 40 Method according to feature 39 with the step

• ▪ Check whether it is the 102.4mT minimum (E _102.4.0 ) of the fluorescence intensity measurement value of the intensity of the fluorescence radiation (FL);

• ▪ Wiederholen der Schritte des Verfahrens nach Merkmal 39 und 40, wenn das eingestellte Minimum des Fluoreszenzintensitätsmesswerts der Intensität der Fluoreszenzstrahlung (FL) nicht das 102,4mT Minimum (E_102.4,0) des Fluoreszenzintensitätsmesswerts der Intensität der Fluoreszenzstrahlung (FL) ist.

Feature 41: Method according to feature 40 with the step

• ▪ repeating the steps of the method of features 39 and 40 if the adjusted minimum fluorescence intensity reading of fluorescence intensity (FL) is not the 102.4mT minimum (E _102.4.0 ) fluorescence intensity reading of fluorescence intensity (FL).

• ▪ Bereitstellen eines Kristalls (HDNV);
• ▪ wobei der Kristall ein oder mehrere paramagnetische Zentren und/oder ein oder mehrere Paare gekoppelter paramagnetischer Zentren und/oder ein oder mehrere Cluster paramagnetischer Zentren und/oder ein oder mehrere Cluster von Paaren gekoppelter paramagnetischer Zentren und/oder einen Diamanten und/oder einen HDNV-Diamantbereich, der die Merkmale eines HDNV-Diamanten aufweist, umfasst und
• ▪ wobei insbesondere die paramagnetischen Zentren an nukleare Spins von Atomen in der Umgebung paramagnetischer Zentren dieser paramagnetischen Zentren koppelbar sein können und
• ▪ wobei der Kristall (HDNV) Diamant, insbesondere einen HD-NV-Diamanten (HDNV), und/oder einen HD-NV-Diamantbereich, der die Merkmale eines HD-NV-Diamanten aufweist, umfasst und
• ▪ wobei paramagnetische Zentren der paramagnetischen Zentren NV-Zentren umfassen;
• ▪ Bereitstellen einer Magnetfeldquelle (MGx, MGy, MGz);
• ▪ Bestrahlen des Kristalls (HDNV) mit Pumpstrahlung (LB), wobei die Pumpstrahlung (LB) mit der Modulation eines Modulationssignals (S5) moduliert ist;
• ▪ Erfassen des Fluoreszenzverzögerungsmesswerts der Intensität der Fluoreszenzstrahlung (FL) des Kristalls (HDNV) für die zeitliche Verzögerung der Modulation der Intensität der Fluoreszenzstrahlung (FL) des Kristalls (HDNV) gegenüber der Modulation der Intensität der Pumpstrahlung (LB) und /oder dem Modulationssignal (S5) und/oder einem daraus abgeleiteten Signal,

gekennzeichnet durch die Schritte

• ▪ Änderung der Stärke der magnetischen Flussdichte (B), die den Kristall (HDNV) durchströmt, in der Art, dass der Wert der magnetischen Flussdichte (B) dem Wert der kennzeichnenden magnetischen Flussdichte B des 102,4 mT Minimum (E_102.4,0) des Fluoreszenzverzögerungsmesswerts für die zeitliche Verzögerung der Modulation der Intensität der Fluoreszenzstrahlung (FL) des HD-NV-Diamanten (HDNV) gegenüber der Modulation der Intensität der Pumpstrahlung (LB) und /oder dem Modulationssignal (S5) und/oder einem daraus abgeleiteten Signal von 9,5mT im Wesentlichen entspricht,
• ▪ wobei das 102,4 mT Maximum (E_102.4,0) des Fluoreszenzverzögerungsmesswerts der zeitlichen Verzögerung der Modulation der Intensität der Fluoreszenzstrahlung (FL) sich dadurch auszeichnet,
  • ◯ dass sich in einem Abstand von ca. 1,30mT zueinander bei einer höheren kennzeichnenden magnetischen Flussdichte (B) bezogen auf das 120,4 mT Maximum (E_120.4,0) des Fluoreszenzverzögerungsmesswerts der zeitlichen Verzögerung der Modulation der Intensität der Fluoreszenzstrahlung (FL) ein oberes erstes lokales Extremum (E_120.4,1b) des Fluoreszenzverzögerungsmesswerts der zeitlichen Verzögerung der Modulation der Intensität der Fluoreszenzstrahlung (FL) in Form eines Minimums des Fluoreszenzverzögerungsmesswerts der zeitlichen Verzögerung der Modulation der Intensität der Fluoreszenzstrahlung (FL) und bei einer niedrigeren kennzeichnenden magnetischen Flussdichte (B) bezogen auf das 120,4mT Maximum (E_120.4,0) des Fluoreszenzverzögerungsmesswerts der zeitlichen Verzögerung der Modulation der Intensität der Fluoreszenzstrahlung (FL) sich ein unteres erstes lokales Extremum (E_120.4,1a) des Fluoreszenzverzögerungsmesswerts der zeitlichen Verzögerung der Modulation der Intensität der Fluoreszenzstrahlung (FL) in Form eines Minimums des Fluoreszenzverzögerungsmesswerts der zeitlichen Verzögerung der Modulation der Intensität der Fluoreszenzstrahlung (FL) befinden und
  • ◯ dass sich in einem Abstand von ca. 2,70mT zueinander bei einer höheren kennzeichnenden magnetischen Flussdichte (B) bezogen auf das 120,4 mT Maximum (E_120.4,0) des Fluoreszenzverzögerungsmesswerts der zeitlichen Verzögerung der Modulation der Intensität der Fluoreszenzstrahlung (FL) ein oberes zweites lokales Extremum (E_120.4,2b) des Fluoreszenzverzögerungsmesswerts der zeitlichen Verzögerung der Modulation der Intensität der Fluoreszenzstrahlung (FL) in Form eines Maximums des Fluoreszenzverzögerungsmesswerts der Verzögerung der Modulation der Intensität der Fluoreszenzstrahlung (FL) und bei einer niedrigeren kennzeichnenden magnetischen Flussdichte (B) bezogen auf das 120,4 mT Maximum (E_120.4,0) des Fluoreszenzverzögerungsmesswerts der zeitlichen Verzögerung der Modulation der Intensität der Fluoreszenzstrahlung (FL) sich ein unteres erstes lokales Extremum (E_120.4,2a) des Fluoreszenzverzögerungsmesswerts der zeitlichen Verzögerung der Modulation der Intensität der Fluoreszenzstrahlung (FL) in Form eines Maximums des Fluoreszenzverzögerungsmesswerts der Verzögerung der Modulation der Intensität der Fluoreszenzstrahlung (FL) befindet und
  • ◯ dass sich in einem Abstand von ca. 4,7mT zueinander bei einer höheren kennzeichnenden magnetischen Flussdichte (B) bezogen auf das 120,4 mT Maximum (E_120.4,0) des Fluoreszenzverzögerungsmesswerts der zeitlichen Verzögerung der Modulation der Intensität der Fluoreszenzstrahlung (FL) ein oberes drittes lokales Extremum (E_120.4,3b) des Fluoreszenzverzögerungsmesswerts der zeitlichen Verzögerung der Modulation der Intensität der Fluoreszenzstrahlung (FL) in Form eines Minimums und bei einer niedrigeren kennzeichnenden magnetischen Flussdichte (B) bezogen auf das 120,4mT Maximum (E_120.4,0) des Fluoreszenzverzögerungsmesswerts der zeitlichen Verzögerung der Modulation der Intensität der Fluoreszenzstrahlung (FL) sich ein unteres drittes lokales Extremum (E_120.4,3a) des Fluoreszenzverzögerungsmesswerts der Verzögerung der Modulation der Intensität der Fluoreszenzstrahlung (FL) in Form eines Minimums des Fluoreszenzverzögerungsmesswerts der zeitlichen Verzögerung der Modulation der Intensität der Fluoreszenzstrahlung (FL) befindet.

Feature 42: Method for calibrating a magnetic flux density (B), in particular according to one or more of features 35 to 37, with the steps

• ▪ Providing a crystal (HDNV);
• ▪ wherein the crystal has one or more paramagnetic centers and/or one or more pairs of coupled paramagnetic centers and/or one or more clusters of paramagnetic centers and/or one or more clusters of pairs of coupled paramagnetic centers and/or a diamond and/or a HDNV -A range of diamonds exhibiting the characteristics of an HDNV diamond, and
• ▪ whereby in particular the paramagnetic centers can be coupled to nuclear spins of atoms in the vicinity of paramagnetic centers of these paramagnetic centers and
• ▪ wherein the crystal (HDNV) comprises diamond, in particular a HD-NV diamond (HDNV), and/or a HD-NV diamond region exhibiting the characteristics of a HD-NV diamond, and
• ▪ wherein paramagnetic centers of the paramagnetic centers include NV centers;
• ▪ Providing a magnetic field source (MGx, MGy, MGz);
• ▪ Irradiating the crystal (HDNV) with pump radiation (LB), the pump radiation (LB) being modulated with the modulation of a modulation signal (S5);
• ▪ Acquiring the fluorescence delay measurement of the crystal fluorescence (FL) intensity (HDNV) for the time delay of the modulation of the fluorescence radiation (FL) intensity of the crystal (HDNV) versus the modulation of the intensity of the pump radiation (LB) and/or the modulation signal ( S5) and/or a signal derived therefrom,

characterized by the steps

• ▪ Changing the strength of the magnetic flux density (B) flowing through the crystal (HDNV) in such a way that the value of the magnetic flux density (B) corresponds to the value of the characteristic magnetic flux density B of the 102.4 mT minimum (E _102.4.0 ) the fluorescence delay measurement value for the time delay of the modulation of the intensity of the fluorescence radiation (FL) of the HD-NV diamond (HDNV) compared to the modulation of the intensity of the pump radiation (LB) and/or the modulation signal (S5) and/or a signal derived therefrom of 9.5mT essentially corresponds to
• ▪ where the 102.4 mT maximum (E _102.4.0 ) of the fluorescence delay measured value of the time delay of the modulation of the intensity of the fluorescence radiation (FL) is characterized by
  • ◯ that at a distance of approx. 1.30mT from each other at a higher characteristic magnetic flux density (B) related to the 120.4 mT maximum (E _120.4.0 ) of the fluorescence delay measured value of the time delay of the modulation of the intensity of the fluorescence radiation (FL) a upper first local extremum (E _120.4,1b ) of the fluorescence delay measured value of the time delay of the modulation of the intensity of the fluorescence radiation (FL) in the form of a minimum of the fluorescence delay measured value of the time delay of the modulation of the intensity of the fluorescence radiation (FL) and at a lower characteristic magnetic flux density ( B) based on the 120.4mT maximum (E _120.4.0 ) of the fluorescence delay measured value of the time delay of the modulation of the intensity of the fluorescence radiation (FL), a lower first local extremum (E _120.4.1a ) of the fluorescence delay measured value of the time delay of the modulation of the intensity of the fluorescence radiation (FL) in the form of a minimum of the fluorescence delay measurement value of the time delay of the modulation of the intensity of the fluorescence radiation (FL) and
  • ◯ that at a distance of approx. 2.70mT from each other at a higher characteristic magnetic flux density (B) related to the 120.4 mT maximum (E _120.4.0 ) of the fluorescence delay measured value of the time delay of the modulation of the intensity of the fluorescence radiation (FL) an upper second local extremum (E _120.4,2b ) of the fluorescence delay measured value of the time delay of the modulation of the fluorescence radiation (FL) intensity in the form of a maximum of the fluorescence delay measured value of the delay of the modulation of the intensity of the fluorescence radiation (FL) and at a lower characteristic magnetic flux density ( B) based on the 120.4 mT maximum (E _120.4.0 ) of the fluorescence delay measured value of the time delay of the modulation of the intensity of the fluorescence radiation (FL), a lower first local extremum (E _120.4.2a ) of the fluorescence delay measured value of the time delay of the modulation of the intensity of fluorescence fluorescence radiation (FL) in the form of a maximum of the fluorescence delay measurement value of the delay of the modulation of the intensity of the fluorescence radiation (FL) and
  • ◯ that at a distance of approx. 4.7mT from each other at a higher characteristic magnetic flux density (B) related to the 120.4 mT maximum (E _120.4.0 ) of the fluorescence delay measured value of the time delay of the modulation of the intensity of the fluorescence radiation (FL) an upper third local extremum (E _120.4,3b ) of the fluorescence delay measured value of the time delay of the modulation of the intensity of the fluorescence radiation (FL) in the form of a minimum and at a lower characteristic magnetic flux density (B) related to the 120.4mT maximum (E _{120.4, 0} ) of the fluorescence delay measurement of the time delay of the modulation of the intensity of the fluorescence radiation (FL) a lower third local extremum (E _120.4,3a ) of the fluorescence delay measurement of the delay of the modulation of the intensity of the fluorescence radiation (FL) in the form of a minimum of the fluorescence delay measurement of the time delay the modulation of the I ntensity of the fluorescence radiation (FL).

• ▪ Voraussagen eines wahrscheinlichen Bereichs für die Magnetfeldquellenparameter der Magnetfeldquelle (MGx, MGy, MGz), in dem diese Magnetfeldquellenparameter der Magnetfeldquelle (MGx, MGy, MGz) sich befinden müssen, um die magnetischen Flussdichte (B) auf den Wert des 102,4mT Extremums (E_102.4,0) des Fluoreszenzverzögerungsmesswerts der zeitlichen Verzögerung der Modulation der Intensität der Fluoreszenzstrahlung (FL) einzustellen;
• ▪ Einstellen der Magnetfeldquelle (MGx, MGy, MGz) entsprechend dieser Magnetfeldquellenparameter;
• ▪ Variieren der Magnetfeldquellenparameter der Magnetfeldquelle (MGx, MGy, MGz) unter Erfassen der Fluoreszenzstrahlung (FL) und Einstellen des lokalen Maximums des Messwerts der zeitlichen Verzögerung der Modulation der Intensität der Fluoreszenzstrahlung (FL).

Feature 43: Method according to feature 42 with the steps

• ▪ Predicting a probable range for the magnetic field source parameters of the magnetic field source (MGx, MGy, MGz), in which these magnetic field source parameters of the magnetic field source (MGx, MGy, MGz) must be located in order to reduce the magnetic flux density (B) to the value of the 102.4mT extremum (E _102.4,0 ) the fluorescence delay measurement value of the time delay of the modulation of the intensity of the fluorescence radiation (FL) to adjust;
• ▪ Setting the magnetic field source (MGx, MGy, MGz) according to these magnetic field source parameters;
• ▪ Varying the magnetic field source parameters of the magnetic field source (MGx, MGy, MGz) while detecting the fluorescence radiation (FL) and adjusting the local maximum of the measured value of the time delay of the modulation of the intensity of the fluorescence radiation (FL).

• ▪ Überprüfen, ob es sich um das 102,4mT Maximum (E_102.4,0) des Fluoreszenzverzögerungsmesswerts der zeitlichen Verzögerung der Modulation der Intensität der Fluoreszenzstrahlung (FL) handelt.

feature 44; The method of feature 42 comprising the step

• ▪ Verify that it is the 102.4mT maximum (E _102.4.0 ) of the fluorescence delay reading of the fluorescence (FL) intensity modulation time delay.

• ▪ Wiederholen der Schritte des Verfahrens nach Merkmal 42 und 44, wenn das eingestellte Maximum des Fluoreszenzverzögerungsmesswerts der Verzögerung der Modulation der Intensität der Fluoreszenzstrahlung (FL) nicht das 102,4mT Maximum (E_102.4,0) des Fluoreszenzverzögerungsmesswerts der zeitlichen Verzögerung der Modulation der Intensität der Fluoreszenzstrahlung (FL) ist.

Feature 45: Method according to feature 44 with the step

• Repeating the steps of the method of feature 42 and 44 if the adjusted maximum fluorescence delay time measurement of the fluorescence intensity modulation (FL) delay delay is not the 102.4mT maximum (E _102.4.0 ) fluorescence delay time measurement of the time delay of the intensity modulation of fluorescence radiation (FL).

Features VIII (calibration method 59.5 mT)

• ▪ Bereitstellen eines Kristalls (HDNV);
• ▪ wobei der Kristall ein oder mehrere paramagnetische Zentren und/oder ein oder mehrere Paare gekoppelter paramagnetischer Zentren und/oder ein oder mehrere Cluster paramagnetischer Zentren und/oder ein oder mehrere Cluster von Paaren gekoppelter paramagnetischer Zentren und/oder einen Diamanten und/oder einen HDNV-Diamantbereich, der die Merkmale eines HDNV-Diamanten aufweist, umfasst und
• ▪ wobei insbesondere die paramagnetischen Zentren an nukleare Spins von Atomen in der Umgebung paramagnetischer Zentren dieser paramagnetischen Zentren koppelbar sein können;
• ▪ Bereitstellen einer Magnetfeldquelle (MGx, MGy, MGz);
• ▪ Bestrahlen des Kristalls (HDNV) mit Pumpstrahlung (LB), deren Intensität ggf. mit der Modulation eines Modulationssignals (S5) moduliert ist;
• ▪ Erfassen des Fluoreszenzintensitätsmesswerts der Intensität der Fluoreszenzstrahlung (FL) des Kristalls (HDNV) und/oder Erfassen des Fluoreszenzverzögerungsmesswerts der Verzögerung der Modulation der Intensität der Fluoreszenzstrahlung (FL) des Kristalls (HDNV) gegenüber der Modulation der Pumpstrahlung (LB) oder der Modulation des Modulationssignals (S5) oder der Modulation eines daraus abgeleiteten Signals,
• ▪ gekennzeichnet durch den Schritt
• ▪ Änderung der Stärke der magnetischen Flussdichte (B), die den Kristall (HDNV) durchströmt, in der Art, dass dann der Wert der magnetische Flussdichte (B) dem Wert der kennzeichnenden magnetischen Flussdichte (B) desjenigen Fluoreszenzmerkmals entspricht, dass dann der Wert der magnetische Flussdichte (B) dem Wert der kennzeichnenden magnetischen Flussdichte (B) desjenigen Fluoreszenzmerkmals entspricht, die auf der Kopplung nicht äquivalenter, also insbesondere nicht gleichausgerichteter, gekoppelter Paare paramagnetischer Zentren entspricht.

Feature 46: Method of calibrating a magnetic flux density (B)

• ▪ Providing a crystal (HDNV);
• ▪ wherein the crystal has one or more paramagnetic centers and/or one or more pairs of coupled paramagnetic centers and/or one or more clusters of paramagnetic centers and/or one or more clusters of pairs of coupled paramagnetic centers and/or a diamond and/or a HDNV -A range of diamonds exhibiting the characteristics of an HDNV diamond, and
• ▪ where in particular the paramagnetic centers can be coupled to nuclear spins of atoms in the vicinity of paramagnetic centers of these paramagnetic centers;
• ▪ Providing a magnetic field source (MGx, MGy, MGz);
• ▪ Irradiating the crystal (HDNV) with pump radiation (LB), the intensity of which may be modulated with the modulation of a modulation signal (S5);
• ▪ Acquiring the fluorescence intensity reading of the fluorescence radiation (FL) intensity of the crystal (HDNV) and/or acquiring the fluorescence delay measurement of the delay of the modulation of the fluorescence radiation (FL) intensity of the crystal (HDNV) versus the modulation of the pump radiation (LB) or the modulation of the modulation signal (S5) or the modulation of a signal derived from it,
• ▪ identified by the step
• ▪ Changing the strength of the magnetic flux density (B) flowing through the crystal (HDNV) in such a way that the value of the magnetic flux density (B) then corresponds to the value of the characteristic magnetic flux density (B) of that fluorescence feature that then the value the magnetic flux density (B) corresponds to the value of the characteristic magnetic flux density (B) of that fluorescence feature which corresponds to the coupling of non-equivalent, i.e. in particular non-aligned, coupled pairs of paramagnetic centers.

• ▪ wobei der Kristall (HDNV) Diamant, insbesondere einen HD-NV-Diamanten (HDNV), umfasst und
• ▪ wobei paramagnetische Zentren der paramagnetischen Zentren NV-Zentren und/oder SiV-Zentren und/oder GeV-Zentren und/oder ST1-Zentren und/oder TR12-Zentren umfassen.

Feature 47: procedure according to feature 46,

• ▪ wherein the crystal (HDNV) comprises diamond, in particular a HD-NV diamond (HDNV), and
• ▪ wherein paramagnetic centers of the paramagnetic centers include NV centers and/or SiV centers and/or GeV centers and/or ST1 centers and/or TR12 centers.

• ▪ Bereitstellen eines Kristalls (HDNV);
• ▪ wobei der Kristall ein oder mehrere paramagnetische Zentren und/oder ein oder mehrere Paare gekoppelter paramagnetischer Zentren und/oder ein oder mehrere Cluster paramagnetischer Zentren und/oder ein oder mehrere Cluster von Paaren gekoppelter paramagnetischer Zentren und/oder einen Diamanten und/oder einen HDNV-Diamantbereich, der die Merkmale eines HDNV-Diamanten aufweist, umfasst und
• ▪ wobei insbesondere die paramagnetischen Zentren an nukleare Spins von Atomen in der Umgebung paramagnetischer Zentren dieser paramagnetischen Zentren koppelbar sein können und
• ▪ wobei der Kristall (HDNV) Diamant, insbesondere einen HD-NV-Diamanten (HDNV), und/oder einen HD-NV-Diamantbereich, der die Merkmale eines HD-NV-Diamanten aufweist, umfasst und
• ▪ wobei paramagnetische Zentren der paramagnetischen Zentren NV-Zentren umfassen;
• ▪ Bereitstellen einer Magnetfeldquelle (MGx, MGy, MGz);
• ▪ Bestrahlen des Kristalls (HDNV) mit Pumpstrahlung (LB);
• ▪ Erfassen des Fluoreszenzintensitätsmesswerts der Intensität der Fluoreszenzstrahlung (FL) des Kristalls (HDNV),
• ▪ gekennzeichnet dadurch
• ▪ Änderung der Stärke der magnetischen Flussdichte (B), die den Kristall (HDNV) durchströmt, in der Art, dass der Wert der magnetischen Flussdichte (B) dem Wert der kennzeichnenden magnetischen Flussdichte B des 59,5mT Minimum (E_59.5,0) des Fluoreszenzintensitätsmesswerts der Intensität der Fluoreszenzstrahlung (FL) von 59,5mT im Wesentlichen entspricht.

Feature 48: Method for calibrating a magnetic flux density (B), in particular according to feature 46 or 47, with the steps

• ▪ Providing a crystal (HDNV);
• ▪ wherein the crystal has one or more paramagnetic centers and/or one or more pairs of coupled paramagnetic centers and/or one or more clusters of paramagnetic centers and/or one or more clusters of pairs of coupled paramagnetic centers and/or a diamond and/or a HDNV -A range of diamonds exhibiting the characteristics of an HDNV diamond, and
• ▪ whereby in particular the paramagnetic centers can be coupled to nuclear spins of atoms in the vicinity of paramagnetic centers of these paramagnetic centers and
• ▪ wherein the crystal (HDNV) comprises diamond, in particular a HD-NV diamond (HDNV), and/or a HD-NV diamond region exhibiting the characteristics of a HD-NV diamond, and
• ▪ wherein paramagnetic centers of the paramagnetic centers include NV centers;
• ▪ Providing a magnetic field source (MGx, MGy, MGz);
• ▪ Irradiation of the crystal (HDNV) with pump radiation (LB);
• ▪ acquiring the fluorescence intensity reading of the intensity of the fluorescence radiation (FL) of the crystal (HDNV),
• ▪ characterized by
• ▪ Changing the strength of the magnetic flux density (B) flowing through the crystal (HDNV) in such a way that the value of the magnetic flux density (B) corresponds to the value of the characteristic magnetic flux density B of the 59.5mT minimum (E _59.5.0 ) of the fluorescence intensity reading essentially corresponds to the intensity of the fluorescence radiation (FL) of 59.5mT.

• ▪ Voraussagen eines wahrscheinlichen Bereichs für die Magnetfeldquellenparameter der Magnetfeldquelle (MGx, MGy, MGz), in dem diese Magnetfeldquellenparameter der Magnetfeldquelle (MGx, MGy, MGz) sich befinden müssen, um die magnetischen Flussdichte (B) auf den Wert der kennzeichnenden magnetischen Flussdichte des 59.5mT Extremums (E_59.5,0) des Fluoreszenzintensitätsmesswerts der Intensität der Fluoreszenzstrahlung (FL) einzustellen;
• ▪ Einstellen der Magnetfeldquelle (MGx, MGy, MGz) entsprechend dieser Magnetfeldquellenparameter;
• ▪ Variieren der Magnetfeldquellenparameter der Magnetfeldquelle (MGx, MGy, MGz) unter Erfassen der Fluoreszenzstrahlung (FL) und Einstellen des lokalen Minimums des Fluoreszenzintensitätsmesswerts der Intensität der Fluoreszenzstrahlung (FL).

Feature 49: Method according to feature 46 with the steps

• ▪ Predicting a likely range for the magnetic field source parameters of the magnetic field source (MGx, MGy, MGz) in which these magnetic field source parameters of the magnetic field source (MGx, MGy, MGz) must be located in order to reduce the magnetic flux density (B) to the value of the characteristic magnetic flux density of the 59.5mT extremum (E _59.5.0 ) of the fluorescence intensity measurement value of the intensity of the fluorescence radiation (FL) to set;
• ▪ Setting the magnetic field source (MGx, MGy, MGz) according to these magnetic field source parameters;
• ▪ Varying the magnetic field source parameters of the magnetic field source (MGx, MGy, MGz) while detecting the fluorescence radiation (FL) and adjusting the local minimum of the fluorescence intensity measurement value of the fluorescence radiation (FL) intensity.

• ▪ Überprüfen, ob es sich um das 59.5mT Minimum (E_59.5,0) des Fluoreszenzintensitätsmesswerts der Intensität der Fluoreszenzstrahlung (FL) handelt;

Feature 50: Method according to feature 49 with the step

• ▪ Check whether it is the 59.5mT minimum (E _59.5.0 ) of the fluorescence intensity reading of the intensity of the fluorescence radiation (FL);

• ▪ Wiederholen der Schritte des Verfahrens nach Merkmal 49 und 50, wenn das eingestellte Minimum des Fluoreszenzintensitätsmesswerts der Intensität der Fluoreszenzstrahlung (FL) nicht das 59.5mT Minimum (E_59.5,0) des Fluoreszenzintensitätsmesswerts der Intensität der Fluoreszenzstrahlung (FL) ist.

Feature 51: Method according to feature 50 with the step

• ▪ repeating the steps of the method of feature 49 and 50 if the adjusted minimum fluorescence intensity reading of fluorescence intensity (FL) is not the 59.5mT minimum (E _59.5.0 ) fluorescence intensity reading of fluorescence intensity (FL).

• ▪ Bereitstellen eines Kristalls (HDNV);
• ▪ wobei der Kristall ein oder mehrere paramagnetische Zentren und/oder ein oder mehrere Paare gekoppelter paramagnetischer Zentren und/oder ein oder mehrere Cluster paramagnetischer Zentren und/oder ein oder mehrere Cluster von Paaren gekoppelter paramagnetischer Zentren und/oder einen Diamanten und/oder einen HDNV-Diamantbereich, der die Merkmale eines HDNV-Diamanten aufweist, umfasst und
• ▪ wobei insbesondere die paramagnetischen Zentren an nukleare Spins von Atomen in der Umgebung paramagnetischer Zentren dieser paramagnetischen Zentren koppelbar sein können und
• ▪ wobei der Kristall (HDNV) Diamant, insbesondere einen HD-NV-Diamanten (HDNV), oder eines HD-NV-Diamantbereichs, der die Merkmale eines HD-NV-Diamanten aufweist, umfasst und
• ▪ wobei paramagnetische Zentren der paramagnetischen Zentren NV-Zentren umfassen;
• ▪ Bereitstellen einer Magnetfeldquelle (MGx, MGy, MGz);
• ▪ Bestrahlen des Kristalls (HDNV) mit Pumpstrahlung (LB), wobei die Pumpstrahlung (LB) mit der Modulation eines Modulationssignals (S5) moduliert ist;
• ▪ Erfassen des Fluoreszenzverzögerungsmesswerts der Intensität der Fluoreszenzstrahlung (FL) des Kristalls (HDNV) für die zeitliche Verzögerung der Modulation der Intensität der Fluoreszenzstrahlung (FL) des Kristalls (HDNV) gegenüber der Modulation der Intensität der Pumpstrahlung (LB) und /oder dem Modulationssignal (S5) und/oder einem daraus abgeleiteten Signal,

gekennzeichnet dadurch

• ▪ Änderung der Stärke der magnetischen Flussdichte (B), die den Kristall (HDNV) durchströmt, in der Art, dass der Wert der magnetischen Flussdichte (B) dem Wert der kennzeichnenden magnetischen Flussdichte B des 59.5mT Maximum (E_59.5,0) des Fluoreszenzverzögerungsmesswerts für die zeitliche Verzögerung der Modulation der Intensität der Fluoreszenzstrahlung (FL) des HD-NV-Diamanten (HDNV) gegenüber der Modulation der Intensität der Pumpstrahlung (LB) und /oder dem Modulationssignal (S5) und/oder einem daraus abgeleiteten Signal von 59,5mT im Wesentlichen entspricht.

Feature 52: Method for calibrating a magnetic flux density (B), in particular according to feature 46 or 47, with the steps

• ▪ Providing a crystal (HDNV);
• ▪ wherein the crystal has one or more paramagnetic centers and/or one or more pairs of coupled paramagnetic centers and/or one or more clusters of paramagnetic centers and/or one or more clusters of pairs of coupled paramagnetic centers and/or a diamond and/or a HDNV -A range of diamonds exhibiting the characteristics of an HDNV diamond, and
• ▪ whereby in particular the paramagnetic centers can be coupled to nuclear spins of atoms in the vicinity of paramagnetic centers of these paramagnetic centers and
• ▪ wherein the crystal (HDNV) comprises diamond, in particular a HD-NV diamond (HDNV), or a HD-NV diamond region exhibiting the characteristics of a HD-NV diamond, and
• ▪ wherein paramagnetic centers of the paramagnetic centers include NV centers;
• ▪ Providing a magnetic field source (MGx, MGy, MGz);
• ▪ Irradiating the crystal (HDNV) with pump radiation (LB), the pump radiation (LB) being modulated with the modulation of a modulation signal (S5);
• ▪ Acquiring the fluorescence delay measurement of the crystal fluorescence (FL) intensity (HDNV) for the time delay of the modulation of the fluorescence radiation (FL) intensity of the crystal (HDNV) versus the modulation of the intensity of the pump radiation (LB) and/or the modulation signal ( S5) and/or a signal derived therefrom,

characterized by

• ▪ Changing the strength of the magnetic flux density (B) flowing through the crystal (HDNV) in such a way that the value of the magnetic flux density (B) corresponds to the value of the characteristic magnetic flux density B of the 59.5mT maximum (E _59.5.0 ) of the Fluorescence delay measurement for the time delay of the modulation of the intensity of the fluorescence radiation (FL) of the HD NV diamond (HDNV) compared to the modulation of the intensity of the pump radiation (LB) and/or the modulation signal (S5) and/or a signal derived therefrom from 59 .5mT essentially corresponds.

• ▪ Voraussagen eines wahrscheinlichen Bereichs für die Magnetfeldquellenparameter der Magnetfeldquelle (MGx, MGy, MGz), in dem diese Magnetfeldquellenparameter der Magnetfeldquelle (MGx, MGy, MGz) sich befinden müssen, um die magnetischen Flussdichte (B) auf den Wert des 59.5mT Extremums (E_59.5,0) des Fluoreszenzverzögerungsmesswerts der zeitlichen Verzögerung der Modulation der Intensität der Fluoreszenzstrahlung (FL) einzustellen;
• ▪ Einstellen der Magnetfeldquelle (MGx, MGy, MGz) entsprechend dieser Magnetfeldquellenparameter;
• ▪ Variieren der Magnetfeldquellenparameter der Magnetfeldquelle (MGx, MGy, MGz) unter Erfassen der Fluoreszenzstrahlung (FL) und Einstellen des lokalen Maximums des Messwerts der zeitlichen Verzögerung der Modulation der Intensität der Fluoreszenzstrahlung (FL).

Feature 53: Method according to feature 52 with the steps

• ▪ Predicting a probable range for the magnetic field source parameters of the magnetic field source (MGx, MGy, MGz), in which these magnetic field source parameters of the magnetic field source (MGx, MGy, MGz) must be located in order to reduce the magnetic flux density (B) to the value of the 59.5mT extremum ( E _59.5.0 ) the fluorescence delay measurement value of the time delay of the modulation of the intensity of the fluorescence radiation (FL) to adjust;
• ▪ Setting the magnetic field source (MGx, MGy, MGz) according to these magnetic field source parameters;
• ▪ Varying the magnetic field source parameters of the magnetic field source (MGx, MGy, MGz) while detecting the fluorescence radiation (FL) and adjusting the local maximum of the measured value of the time delay of the modulation of the intensity of the fluorescence radiation (FL).

• ▪ Überprüfen, ob es sich um das 59.5mT Maximum (E_59.5,0) des Fluoreszenzverzögerungsmesswerts der zeitlichen Verzögerung der Modulation der Intensität der Fluoreszenzstrahlung (FL) des HD-NV-Diamanten (HDNV) gegenüber der Modulation der Intensität der Pumpstrahlung (LB) oder der Modulation eines Modulationssignals (S5) oder eines daraus abgeleiteten Signals handelt.

Feature 54: Method according to feature 53 with the step

• ▪ Verify that it is the 59.5mT maximum (E _59.5.0 ) fluorescence delay measurement of the time delay of the HDNV Diamond (HDNV) Fluorescence Radiation (FL) intensity modulation versus the Pump Radiation (LB) intensity modulation or the modulation of a modulation signal (S5) or a signal derived therefrom.

• ▪ Wiederholen der Schritte des Verfahrens nach Merkmal 53 und 54, wenn das eingestellte Maximum des Fluoreszenzverzögerungsmesswerts der zeitlichen Verzögerung der Modulation der Intensität der Fluoreszenzstrahlung (FL) des HD-NV-Diamanten (HDNV) gegenüber der Modulation der Intensität der Pumpstrahlung (LB) oder der Modulation eines Modulationssignals (S5) oder eines daraus abgeleiteten Signals nicht das 59,5mT Maximum (E_59.5,0) des Fluoreszenzverzögerungsmesswerts der Verzögerung der Modulation der Intensität der Fluoreszenzstrahlung (FL) des HD-NV-Diamanten (HDNV) gegenüber der Modulation der Intensität der Pumpstrahlung (LB) oder der Modulation eines Modulationssignals (S5) oder eines daraus abgeleiteten Signals ist.

Feature 55: Method according to feature 54 with the step

• ▪ repeating the steps of the method of feature 53 and 54 if the adjusted maximum of the fluorescence delay measurement value corresponds to the time delay of the modulation of the intensity of the fluorescence radiation (FL) of the HD-NV diamond (HDNV) versus the modulation of the intensity of the pump radiation (LB) or the modulation of a modulation signal (S5) or a signal derived therefrom does not exceed the 59.5mT maximum (E _59.5.0 ) of the fluorescence delay measured value of the delay in the modulation of the intensity of the fluorescence radiation (FL) of the HD-NV diamond (HDNV) compared to the modulation of the Intensity of the pump radiation (LB) or the modulation of a modulation signal (S5) or a signal derived therefrom.

Features IX (tilt angle)

• ▪ Voraussagen eines wahrscheinlichen Bereichs für die Ausrichtungsparameter der Ausrichtungsvorrichtung (DMT, RT, HLT), in dem diese Ausrichtungsparameter der Ausrichtungsvorrichtung (DMT, RT, HLT) sich befinden müssen, um die Ausrichtung eines oder mehrerer paramagnetischer Zentren in Übereinstimmung mit der Richtung einer magnetischen Flussdichte (B) einzustellen;
• ▪ Einstellen der Ausrichtungsvorrichtung (DMT, RT, HLT) entsprechend dieser Ausrichtungsparameter;
• ▪ Variieren der Ausrichtungsparameter der Ausrichtungsvorrichtung (DMT, RT, HLT) unter Erfassen eines Fluoreszenzintensitätsmesswerts und/oder eines Fluoreszenzverzögerungsmesswerts der Fluoreszenzstrahlung (FL) und Einstellen des lokalen Extremums des Fluoreszenzintensitätsmesswerts bzw. des Fluoreszenzverzögerungsmesswerts der Fluoreszenzstrahlung (FL) entsprechend dem Fluoreszenzmerkmal.

Feature 56: Method according to one or more of features 9 to 55 with the steps

• ▪ Predict a likely range for the alignment device alignment parameters (DMT, RT, HLT) in which these alignment device alignment parameters (DMT, RT, HLT) must reside in order for the alignment of one or more paramagnetic centers to coincide with the direction of a magnetic adjust flux density (B);
• ▪ Adjusting the alignment device (DMT, RT, HLT) according to these alignment parameters;
• ▪ Varying the alignment parameters of the alignment device (DMT, RT, HLT) to acquire a fluorescence intensity measurement and/or a fluorescence delay measurement of fluorescence (FL) and adjust the local extremum of the fluorescence intensity measurement or the fluorescence delay measurement of fluorescence (FL) according to the fluorescent feature.

• ▪ Überprüfen, ob es sich um das Extremum des Fluoreszenzintensitätsmesswerts und/oder des Fluoreszenzverzögerungsmesswerts der Fluoreszenzstrahlung (FL) des gewünschten Fluoreszenzmerkmals handelt.

Feature 57: Method according to feature 56 with the step

• ▪ Verify that it is the extremum of the fluorescence intensity reading and/or the fluorescence delay reading of the fluorescence emission (FL) of the fluorescent feature of interest.

• ▪ Wiederholen der Schritte des Verfahrens nach dem einen Merkmal oder den mehreren Merkmalen der Merkmale 9 bis 55 und nach Merkmal 56 und 57, wenn das eingestellte Extremum des Fluoreszenzintensitätsmesswerts und/oder des Fluoreszenzverzögerungsmesswerts der Fluoreszenzstrahlung (FL) nicht das gewünschte Extremum des Fluoreszenzintensitätsmesswerts und/oder des Fluoreszenzverzögerungsmesswerts der Fluoreszenzstrahlung (FL) für das betreffende Fluoreszenzmerkmal ist.

Feature 58: Method according to feature 57 with the step

• ▪ repeating the steps of the method according to the one or more features of features 9 to 55 and according to features 56 and 57 if the adjusted extremum of the fluorescence intensity reading and/or the fluorescence delay reading of the fluorescence radiation (FL) is not the desired extremum of the fluorescence intensity reading and/or or the fluorescence delay measurement of fluorescence radiation (FL) for the fluorescent feature of interest.

• ▪ Voraussagen eines wahrscheinlichen Bereichs für die Ausrichtungsparameter der Ausrichtungsvorrichtung (DMT, RT, HLT), in dem diese Ausrichtungsparameter der Ausrichtungsvorrichtung (DMT, RT, HLT) sich befinden müssen, um die Ausrichtung eines oder mehrerer NV-Zentren in Übereinstimmung mit der Richtung einer magnetischen Flussdichte (B) einzustellen;
• ▪ Einstellen der Ausrichtungsvorrichtung (DMT, RT, HLT) entsprechend dieser Ausrichtungsparameter;
• ▪ Variieren der Ausrichtungsparameter der Ausrichtungsvorrichtung (DMT, RT, HLT) unter Erfassen der Fluoreszenzstrahlung (FL) und Einstellen des lokalen Extremums des Fluoreszenzintensitätsmesswerts und/oder des Fluoreszenzverzögerungsmesswerts der Fluoreszenzstrahlung (FL).

Feature 59: Method according to one or more of features 15 to 24 with the steps

• ▪ Predicting a likely range for the alignment device alignment parameters (DMT, RT, HLT) in which these alignment device alignment parameters (DMT, RT, HLT) must reside in order to align one or more NV centers in accordance with the direction of a adjust magnetic flux density (B);
• ▪ Adjusting the alignment device (DMT, RT, HLT) according to these alignment parameters;
• ▪ Varying the alignment parameters of the alignment device (DMT, RT, HLT) to detect the fluorescence (FL) and adjust the local extremum of the fluorescence intensity reading and/or the fluorescence delay reading of the fluorescence (FL).

• ▪ Überprüfen, ob es sich um das 34mT Extremum (E_34,0) des Fluoreszenzintensitätsmesswerts und/oder des Fluoreszenzverzögerungsmesswerts der Fluoreszenzstrahlung (FL) handelt.

Feature 60: Method according to feature 59 with the step

• ▪ Check whether it is the 34mT extremum (E _34.0 ) of the fluorescence intensity reading and/or the fluorescence delay reading of the fluorescence radiation (FL).

• ▪ wobei der Kristall ein oder mehrere paramagnetische Zentren und/oder ein oder mehrere Paare gekoppelter paramagnetischer Zentren und/oder ein oder mehrere Cluster paramagnetischer Zentren und/oder ein oder mehrere Cluster von Paaren gekoppelter paramagnetischer Zentren und/oder einen Diamanten und/oder einen HDNV-Diamantbereich, der die Merkmale eines HDNV-Diamanten aufweist, umfasst und
• ▪ wobei insbesondere die paramagnetischen Zentren an nukleare Spins von Atomen in der Umgebung paramagnetischer Zentren dieser paramagnetischen Zentren koppelbar sein können und
• ▪ wobei der Kristall (HDNV) Diamant, insbesondere einen HD-NV-Diamanten (HDNV) oder einen HD-NV-Diamantbereich, der die Merkmale eines DH-NV-Diamanten aufweist, umfasst und
• ▪ wobei paramagnetische Zentren der paramagnetischen Zentren NV-Zentren umfassen,
• ▪ mit dem Schritt
• ▪ Wiederholen der Schritte des Verfahrens nach dem einen Merkmal oder den mehreren Merkmalen der Merkmale 15 bis 24 und nach Merkmal 61 und 60, wenn das eingestellte Extremum nicht das 34mT Extremum (E_34,0) des Fluoreszenzintensitätsmesswerts und/oder des Fluoreszenzverzögerungsmesswerts der Fluoreszenzstrahlung (FL) des 34mT Fluoreszenzmerkmals (E_34,0) ist.

Feature 61: procedure according to feature 60,

• ▪ wherein the crystal has one or more paramagnetic centers and/or one or more pairs of coupled paramagnetic centers and/or one or more clusters of paramagnetic centers and/or one or more clusters of pairs of coupled paramagnetic centers and/or a diamond and/or a HDNV -A range of diamonds exhibiting the characteristics of an HDNV diamond, and
• ▪ whereby in particular the paramagnetic centers can be coupled to nuclear spins of atoms in the vicinity of paramagnetic centers of these paramagnetic centers and
• ▪ wherein the crystal (HDNV) comprises diamond, in particular a HD-NV diamond (HDNV) or a HD-NV diamond region exhibiting the characteristics of a DH-NV diamond and
• ▪ where paramagnetic centers of the paramagnetic centers include NV centers,
• ▪ with the step
• ▪ repeating the steps of the method of the one or more features of features 15 through 24 and features 61 and 60 if the adjusted extremum is not the 34mT extremum (E _34,0 ) of the fluorescence intensity reading and/or the fluorescence delay reading of the fluorescence radiation ( FL) of the 34mT fluorescent feature (E _34.0 ).

• ▪ Voraussagen eines wahrscheinlichen Bereichs für die Ausrichtungsparameter der Ausrichtungsvorrichtung (DMT, RT, HLT), in dem diese Ausrichtungsparameter der Ausrichtungsvorrichtung (DMT, RT, HLT) sich befinden müssen, um die Ausrichtung eines oder mehrerer NV-Zentren in Übereinstimmung mit der Richtung einer magnetischen Flussdichte (B) einzustellen;
• ▪ Einstellen der Ausrichtungsvorrichtung (DMT, RT, HLT) entsprechend dieser Ausrichtungsparameter;
• ▪ Variieren der Ausrichtungsparameter der Ausrichtungsvorrichtung (DMT, RT, HLT) unter Erfassen der Fluoreszenzstrahlung (FL) und Einstellen des lokalen Extremums des Fluoreszenzintensitätsmesswerts und/oder des Fluoreszenzverzögerungsmesswerts der Fluoreszenzstrahlung (FL).

Feature 62: Method according to one or more of features 25 to 34 with the steps

• ▪ Predicting a likely range for the alignment device alignment parameters (DMT, RT, HLT) in which these alignment device alignment parameters (DMT, RT, HLT) must reside in order to align one or more NV centers in accordance with the direction of a adjust magnetic flux density (B);
• ▪ Adjusting the alignment device (DMT, RT, HLT) according to these alignment parameters;
• ▪ Varying the alignment parameters of the alignment device (DMT, RT, HLT) to detect the fluorescence (FL) and adjust the local extremum of the fluorescence intensity reading and/or the fluorescence delay reading of the fluorescence (FL).

• ▪ Überprüfen, ob es sich um das 9,5mT Extremum (E_9.5,0) des Fluoreszenzintensitätsmesswerts und/oder des Fluoreszenzverzögerungsmesswerts der Fluoreszenzstrahlung (FL) handelt;

Feature 63: Method according to feature 62 with the step

• ▪ Check whether it is the 9.5mT extremum (E _9.5.0 ) of the fluorescence intensity reading and/or the fluorescence delay reading of the fluorescence radiation (FL);

• ▪ wobei der Kristall ein oder mehrere paramagnetische Zentren und/oder ein oder mehrere Paare gekoppelter paramagnetischer Zentren und/oder ein oder mehrere Cluster paramagnetischer Zentren und/oder ein oder mehrere Cluster von Paaren gekoppelter paramagnetischer Zentren und/oder einen Diamanten und/oder einen HDNV-Diamantbereich, der die Merkmale eines HDNV-Diamanten aufweist, umfasst und
• ▪ wobei insbesondere die paramagnetischen Zentren an nukleare Spins von Atomen in der Umgebung paramagnetischer Zentren dieser paramagnetischen Zentren koppelbar sein können und
• ▪ wobei der Kristall (HDNV) Diamant, insbesondere einen HD-NV-Diamanten (HDNV) und/oder einen HDNV-Diamantbereich, der die Merkmale eines HD-NV-Diamanten aufweist, umfasst und
• ▪ wobei paramagnetische Zentren der paramagnetischen Zentren NV-Zentren umfassen,
• ▪ mit dem Schritt
• ▪ Wiederholen der Schritte des Verfahrens nach dem einen Merkmal oder den mehreren Merkmalen der Merkmale 25 bis 34 und nach einem oder mehreren der Merkmale 62 und 63, wenn das eingestellte Extremum nicht das 9,5mT Extremum (E_9.5,0) des Fluoreszenzintensitätsmesswerts und/oder des Fluoreszenzverzögerungsmesswerts der Fluoreszenzstrahlung (FL) des 9,5mT Fluoreszenzmerkmals (E_9.5,0) ist.

Feature 64: procedure according to feature 63,

• ▪ wherein the crystal has one or more paramagnetic centers and/or one or more pairs of coupled paramagnetic centers and/or one or more clusters of paramagnetic centers and/or one or more clusters of pairs of coupled paramagnetic centers and/or a diamond and/or a HDNV -A range of diamonds exhibiting the characteristics of an HDNV diamond, and
• ▪ whereby in particular the paramagnetic centers can be coupled to nuclear spins of atoms in the vicinity of paramagnetic centers of these paramagnetic centers and
• ▪ wherein the crystal (HDNV) comprises diamond, in particular a HDNV diamond (HDNV) and/or an HDNV diamond region which has the characteristics of a HDNV diamond and
• ▪ where paramagnetic centers of the paramagnetic centers include NV centers,
• ▪ with the step
• ▪ Repeating the steps of the method according to one or more of the features of features 25 to 34 and one or more of features 62 and 63 if the set extremum is not the 9.5mT extremum (E _9.5.0 ) of the fluorescence intensity measurement value and/ or the fluorescence delay measurement of the fluorescence (FL) of the 9.5mT fluorescence feature (E _9.5.0 ).

• ▪ Voraussagen eines wahrscheinlichen Bereichs für die Ausrichtungsparameter der Ausrichtungsvorrichtung (DMT, RT, HLT), in dem diese Ausrichtungsparameter der Ausrichtungsvorrichtung (DMT, RT, HLT) sich befinden müssen, um die Ausrichtung eines oder mehrerer NV-Zentren in Übereinstimmung mit der Richtung einer magnetischen Flussdichte (B) einzustellen;
• ▪ Einstellen der Ausrichtungsvorrichtung (DMT, RT, HLT) entsprechend dieser Ausrichtungsparameter;
• ▪ Variieren der Ausrichtungsparameter der Ausrichtungsvorrichtung (DMT, RT, HLT) unter Erfassen der Fluoreszenzstrahlung (FL) und Einstellen des lokalen Extremums des Fluoreszenzintensitätsmesswerts und/oder des Fluoreszenzverzögerungsmesswerts der Fluoreszenzstrahlung (FL).

Feature 65: Method according to one or more of features 35 to 45 with the steps

• ▪ Predicting a likely range for the alignment device alignment parameters (DMT, RT, HLT) in which these alignment device alignment parameters (DMT, RT, HLT) must reside in order to align one or more NV centers in accordance with the direction of a adjust magnetic flux density (B);
• ▪ Adjusting the alignment device (DMT, RT, HLT) according to these alignment parameters;
• ▪ Varying the alignment parameters of the alignment device (DMT, RT, HLT) to detect the fluorescence (FL) and adjust the local extremum of the fluorescence intensity reading and/or the fluorescence delay reading of the fluorescence (FL).

• ▪ Überprüfen, ob es sich um das 102.4mT Extremum (E_102.4,0) des Fluoreszenzintensitätsmesswerts und/oder des Fluoreszenzverzögerungsmesswerts der Fluoreszenzstrahlung (FL) handelt;

Feature 66: Method according to feature 65 with the step

• ▪ Check whether it is the 102.4mT extremum (E _102.4.0 ) of the fluorescence intensity reading and/or the fluorescence delay reading of the fluorescence radiation (FL);

• ▪ wobei der Kristall ein oder mehrere paramagnetische Zentren und/oder ein oder mehrere Paare gekoppelter paramagnetischer Zentren und/oder ein oder mehrere Cluster paramagnetischer Zentren und/oder ein oder mehrere Cluster von Paaren gekoppelter paramagnetischer Zentren und/oder einen Diamanten und/oder einen HDNV-Diamantbereich, der die Merkmale eines HDNV-Diamanten aufweist, umfasst und
• ▪ wobei insbesondere die paramagnetischen Zentren an nukleare Spins von Atomen in der Umgebung paramagnetischer Zentren dieser paramagnetischen Zentren koppelbar sein können und
• ▪ wobei der Kristall (HDNV) Diamant, insbesondere einen HD-NV-Diamanten (HDNV) und7oder einen HD-NV-Diamantbereichs, der die Merkmale eines HD-NV-Diamanten aufweist, umfasst und
• ▪ wobei paramagnetische Zentren der paramagnetischen Zentren NV-Zentren umfassen,
• ▪ mit dem Schritt
• ▪ Wiederholen der Schritte des Verfahrens nach dem einen Merkmal oder den mehreren Merkmalen der Merkmale 35 bis 45 und nach Merkmal 65 und 66, wenn das eingestellte Extremum nicht das 102,4mT Extremum (E_102.4,0) des Fluoreszenzintensitätsmesswerts und/oder des Fluoreszenzverzögerungsmesswerts der Fluoreszenzstrahlung (FL) des 102.4mT Fluoreszenzmerkmals (E_102.4,0) ist.

Feature 67: procedure according to feature 66,

• ▪ wherein the crystal has one or more paramagnetic centers and/or one or more pairs of coupled paramagnetic centers and/or one or more clusters of paramagnetic centers and/or one or more clusters of pairs of coupled paramagnetic centers and/or a diamond and/or a HDNV -A range of diamonds exhibiting the characteristics of an HDNV diamond, and
• ▪ whereby in particular the paramagnetic centers can be coupled to nuclear spins of atoms in the vicinity of paramagnetic centers of these paramagnetic centers and
• ▪ wherein the crystal (HDNV) comprises diamond, in particular a HD-NV diamond (HDNV) and7or a HD-NV diamond region exhibiting the characteristics of a HD-NV diamond and
• ▪ where paramagnetic centers of the paramagnetic centers include NV centers,
• ▪ with the step
• ▪ repeating the steps of the method of the one or more features of features 35 through 45 and of features 65 and 66 if the adjusted extremum is not the 102.4mT extremum (E _102.4.0 ) of the fluorescence intensity reading and/or the fluorescence delay reading of the Fluorescence radiation (FL) of the 102.4mT fluorescent feature (E _102.4.0 ).

• ▪ Voraussagen eines wahrscheinlichen Bereichs für die Ausrichtungsparameter der Ausrichtungsvorrichtung (DMT, RT, HLT), in dem diese Ausrichtungsparameter der Ausrichtungsvorrichtung (DMT, RT, HLT) sich befinden müssen, um die Ausrichtung eines oder mehrerer NV-Zentren in Übereinstimmung mit der Richtung einer magnetischen Flussdichte (B) einzustellen;
• ▪ Einstellen der Ausrichtungsvorrichtung (DMT, RT, HLT) entsprechend dieser Ausrichtungsparameter;
• ▪ Variieren der Ausrichtungsparameter der Ausrichtungsvorrichtung (DMT, RT, HLT) unter Erfassen der Fluoreszenzstrahlung (FL) und Einstellen des lokalen Extremums des Fluoreszenzintensitätsmesswerts und/oder des Fluoreszenzverzögerungsmesswerts der Fluoreszenzstrahlung (FL).

Feature 68: Method according to one or more of features 46 to 55 with the steps

• ▪ Predicting a likely range for the alignment device alignment parameters (DMT, RT, HLT) in which these alignment device alignment parameters (DMT, RT, HLT) must reside in order to align one or more NV centers in accordance with the direction of a adjust magnetic flux density (B);
• ▪ Adjusting the alignment device (DMT, RT, HLT) according to these alignment parameters;
• ▪ Varying the alignment parameters of the alignment device (DMT, RT, HLT) to detect the fluorescence (FL) and adjust the local extremum of the fluorescence intensity reading and/or the fluorescence delay reading of the fluorescence (FL).

• ▪ Überprüfen, ob es sich um das 59,5mT Extremum (E_59.5,0) handelt des Fluoreszenzintensitätsmesswerts und/oder des Fluoreszenzverzögerungsmesswerts der Fluoreszenzstrahlung (FL) handelt.

Feature 69: Method according to feature 68 with the step

• ▪ Check whether it is the 59.5mT extremum (E _59.5.0 ) of the fluorescence intensity reading and/or the fluorescence delay reading of the fluorescence radiation (FL).

• ▪ wobei der Kristall ein oder mehrere paramagnetische Zentren und/oder ein oder mehrere Paare gekoppelter paramagnetischer Zentren und/oder ein oder mehrere Cluster paramagnetischer Zentren und/oder ein oder mehrere Cluster von Paaren gekoppelter paramagnetischer Zentren und/oder einen Diamanten und/oder einen HDNV-Diamantbereich, der die Merkmale eines HDNV-Diamanten aufweist, umfasst und
• ▪ wobei insbesondere die paramagnetischen Zentren an nukleare Spins von Atomen in der Umgebung paramagnetischer Zentren dieser paramagnetischen Zentren koppelbar sein können und
• ▪ wobei der Kristall (HDNV) Diamant, insbesondere einen HD-NV-Diamanten (HDNV) und/oder einen HD-NV-Diamantbereich, der die Merkmale eines HD-NV-Diamanten aufweist, umfasst und
• ▪ wobei paramagnetische Zentren der paramagnetischen Zentren NV-Zentren umfassen,
• ▪ mit dem Schritt
• ▪ Wiederholen der Schritte des Verfahrens nach dem einen Merkmal oder den mehreren Merkmalen der Merkmale 0 bis 0 und nach Merkmal 68 und 69, wenn das eingestellte Extremum nicht das 59,5mT Extremum (E_59.5,0) des Fluoreszenzintensitätsmesswerts und/oder des Fluoreszenzverzögerungsmesswerts der Fluoreszenzstrahlung (FL) des 59,5mT Fluoreszenzmerkmals (E_59.5,0) ist.

Feature 70: procedure according to feature 69,

• ▪ wherein the crystal has one or more paramagnetic centers and/or one or more pairs of coupled paramagnetic centers and/or one or more clusters of paramagnetic centers and/or one or more clusters of pairs of coupled paramagnetic centers and/or a diamond and/or a HDNV -A range of diamonds exhibiting the characteristics of an HDNV diamond, and
• ▪ whereby in particular the paramagnetic centers can be coupled to nuclear spins of atoms in the vicinity of paramagnetic centers of these paramagnetic centers and
• ▪ wherein the crystal (HDNV) comprises diamond, in particular a HD-NV diamond (HDNV) and/or a HD-NV diamond region which has the characteristics of a HD-NV diamond, and
• ▪ where paramagnetic centers of the paramagnetic centers include NV centers,
• ▪ with the step
• ▪ repeating the steps of the method after the one or more features of features 0 through 0 and after features 68 and 69 if the adjusted extremum is not the 59.5mT extremum (E _59.5.0 ) of the fluorescence intensity reading and/or the fluorescence delay reading of the Fluorescence radiation (FL) of the 59.5mT fluorescent feature (E _59.5.0 ).

Feature X (using a 59.5mT HD-NV diamond)

• ▪ wobei der Kristall des 59,5mT-HD-NV-Diamanten (HDNV) ein oder mehrere paramagnetische Zentren und/oder ein oder mehrere Paare gekoppelter paramagnetischer Zentren und/oder ein oder mehrere Cluster paramagnetischer Zentren und/oder ein oder mehrere Cluster von Paaren gekoppelter paramagnetischer Zentren umfasst und
• ▪ wobei insbesondere die paramagnetischen Zentren an nukleare Spins von Atomen in der Umgebung paramagnetischer Zentren dieser paramagnetischen Zentren koppelbar sein können;
• ▪ wobei paramagnetische Zentren der paramagnetischen Zentren NV-Zentren umfassen und
• ▪ wobei die Fluoreszenzintensitätskurve des Fluoreszenzintensitätswerts der Intensität der Fluoreszenzstrahlung (FL) des HD-NV-Diamanten (HDNV) in Abhängigkeit von der magnetischen Flussdichte B für die Bestrahlung des HD-NV-Diamanten (HDNV) mit einer Pumpstrahlung (LB) einen typischen Intensitätsabfall des Fluoreszenzintensitätswerts (englisch: Dip) von mehr 2% und/oder von mehr als 5% bei einer auf den HD-NV-Diamanten (HDNV) einwirkenden externen kennzeichnenden magnetischen Flussdichte (B) von etwa 59,5 mT (E_59.5,0) zeigt, der auf eine NV-NV-Wechselwirkung und damit einen geringen mittleren Abstand zwischen den NV-Zentren hinweist.

Feature 71: Use of a 59.5mT HD NV diamond (HDNV) for a quantum technological device, in particular as a sensor element of a quantum technological sensor system,

• ▪ wherein the 59.5mT HD-NV Diamond (HDNV) crystal has one or more paramagnetic centers and/or one or more pairs of coupled paramagnetic centers and/or one or more clusters of paramagnetic centers and/or one or more clusters of pairs coupled paramagnetic centers includes and
• ▪ where in particular the paramagnetic centers can be coupled to nuclear spins of atoms in the vicinity of paramagnetic centers of these paramagnetic centers;
• ▪ where paramagnetic centers of the paramagnetic centers include NV centers and
• ▪ where the fluorescence intensity curve of the fluorescence intensity value of the intensity of the fluorescence radiation (FL) of the HD-NV diamond (HDNV) as a function of the magnetic flux density B for the irradiation of the HD-NV diamond (HDNV) with a pump radiation (LB) shows a typical intensity drop Fluorescence Intensity Value (Dip) greater than 2% and/or greater than 5% at an external characteristic magnetic flux density (B) acting on the HD-NV Diamond (HDNV) of about 59.5 mT (E _59.5.0 ) indicating NV-NV interaction and thus a small mean distance between the NV centers.

• ▪ wobei der Kristall des 59,5mT-HD-NV-Diamanten (HDNV) ein oder mehrere paramagnetische Zentren und/oder ein oder mehrere Paare gekoppelter paramagnetischer Zentren und/oder ein oder mehrere Cluster paramagnetischer Zentren und/oder ein oder mehrere Cluster von Paaren gekoppelter paramagnetischer Zentren umfasst und
• ▪ wobei paramagnetische Zentren der paramagnetischen Zentren NV-Zentren umfassen und
• ▪ wobei insbesondere die paramagnetischen Zentren an nukleare Spins von Atomen in der Umgebung paramagnetischer Zentren dieser paramagnetischen Zentren koppelbar sein können;
• ▪ wobei die Fluoreszenzverzögerungskurve des Fluoreszenzintensitätswerts der Intensität der Fluoreszenzstrahlung (FL) des HD-NV-Diamanten (HDNV) in Abhängigkeit von der magnetischen Flussdichte B für die Bestrahlung des HD-NV-Diamanten (HDNV) mit einer Pumpstrahlung (LB) einen typischen Verzögerungsanstieg des Fluoreszenzverzögerungswerts (englisch: increase) von mehr 2% und/oder von mehr als 5% bei einer auf den HD-NV-Diamanten (HDNV) einwirkenden externen kennzeichnenden magnetischen Flussdichte (B) von etwa 59,5 mT (E_59.5,0) zeigt, der auf eine NV-NV-Wechselwirkung und damit einen geringen mittleren Abstand zwischen den NV-Zentren hinweist.

Feature 72: Use of a 59.5mT HD NV diamond (HDNV) for a quantum technological device, in particular as a sensor element of a quantum technological sensor system,

• ▪ wherein the 59.5mT HD-NV Diamond (HDNV) crystal has one or more paramagnetic centers and/or one or more pairs of coupled paramagnetic centers and/or one or more clusters of paramagnetic centers and/or one or more clusters of pairs coupled paramagnetic centers includes and
• ▪ where paramagnetic centers of the paramagnetic centers include NV centers and
• ▪ where in particular the paramagnetic centers can be coupled to nuclear spins of atoms in the vicinity of paramagnetic centers of these paramagnetic centers;
• ▪ where the fluorescence retardation curve of the fluorescence intensity value of the intensity of the fluorescence radiation (FL) of the HD-NV diamond (HDNV) as a function of the magnetic flux density B for the irradiation of the HD-NV diamond (HDNV) with a pump radiation (LB) shows a typical increase in retardation the fluorescence retardation value (increase) of more than 2% and/or more than 5% with an external characteristic acting on the HD-NV diamond (HDNV). magnetic flux density (B) of about 59.5 mT (E _59.5.0 ) indicating a NV-NV interaction and thus a small mean distance between the NV centers.

Features XI (Using a 34.0mT HD-NV Diamond)

• ▪ wobei der Kristall des 34,0mT-HD-NV-Diamanten (HDNV) ein oder mehrere paramagnetische Zentren und/oder ein oder mehrere Paare gekoppelter paramagnetischer Zentren und/oder ein oder mehrere Cluster paramagnetischer Zentren und/oder ein oder mehrere Cluster von Paaren gekoppelter paramagnetischer Zentren umfasst und
• ▪ wobei paramagnetische Zentren der paramagnetischen Zentren NV-Zentren umfassen und
• ▪ wobei insbesondere die paramagnetischen Zentren an nukleare Spins von Atomen in der Umgebung paramagnetischer Zentren dieser paramagnetischen Zentren koppelbar sein können;
• ▪ wobei die Fluoreszenzintensitätskurve des Fluoreszenzintensitätswerts der Intensität der Fluoreszenzstrahlung (FL) des HD-NV-Diamanten (HDNV) in Abhängigkeit von der magnetischen Flussdichte B für die Bestrahlung des HD-NV-Diamanten (HDNV) mit einer Pumpstrahlung (LB) einen typischen Intensitätsabfall des Fluoreszenzintensitätswerts (englisch: Dip) von mehr als 0,01% und/oder von mehr als 0,02% und/oder von mehr als 0,05% und/oder von mehr als 0,1% und/oder von mehr als 0,2% und/oder von mehr als 0,5% und/oder von mehr als 1% und/oder von mehr als 2% und/oder von mehr als 5% bei einer auf den HD-NV-Diamanten (HDNV) einwirkenden externen kennzeichnenden magnetischen Flussdichte (B) von etwa 34,0 mT (E_34.0,0) zeigt, der auf eine NV-NV-Wechselwirkung und damit einen geringen mittleren Abstand zwischen äquivalenten, also gleichausgerichteten NV-Zentren hinweist.

Features 73: Use of a 34.0mT HD NV diamond (HDNV) for a quantum technological device, in particular as a sensor element of a quantum technological sensor system,

• ▪ wherein the 34.0mT HD-NV Diamond (HDNV) crystal has one or more paramagnetic centers and/or one or more pairs of coupled paramagnetic centers and/or one or more clusters of paramagnetic centers and/or one or more clusters of pairs coupled paramagnetic centers includes and
• ▪ where paramagnetic centers of the paramagnetic centers include NV centers and
• ▪ where in particular the paramagnetic centers can be coupled to nuclear spins of atoms in the vicinity of paramagnetic centers of these paramagnetic centers;
• ▪ where the fluorescence intensity curve of the fluorescence intensity value of the intensity of the fluorescence radiation (FL) of the HD-NV diamond (HDNV) as a function of the magnetic flux density B for the irradiation of the HD-NV diamond (HDNV) with a pump radiation (LB) shows a typical intensity drop fluorescence intensity value (Dip) greater than 0.01% and/or greater than 0.02% and/or greater than 0.05% and/or greater than 0.1% and/or greater than 0.2% and/or more than 0.5% and/or more than 1% and/or more than 2% and/or more than 5% for one on the HD NV Diamonds (HDNV) external characteristic magnetic flux density (B) of about 34.0 mT (E _34.0.0 ), which indicates an NV-NV interaction and thus a small mean distance between equivalent, i.e. aligned NV centers.

• ▪ wobei der Kristall des 34,0mT-HD-NV-Diamanten (HDNV) ein oder mehrere paramagnetische Zentren und/oder ein oder mehrere Paare gekoppelter paramagnetischer Zentren und/oder ein oder mehrere Cluster paramagnetischer Zentren und/oder ein oder mehrere Cluster von Paaren gekoppelter paramagnetischer Zentren umfasst und
• ▪ wobei paramagnetische Zentren der paramagnetischen Zentren NV-Zentren umfassen und
• ▪ wobei insbesondere die paramagnetischen Zentren an nukleare Spins von Atomen in der Umgebung paramagnetischer Zentren dieser paramagnetischen Zentren koppelbar sein können;
• ▪ wobei die Fluoreszenzverzögerungskurve des Fluoreszenzverzögerungswerts der zeitlichen Verzögerung der Fluoreszenzstrahlung (FL) des HD-NV-Diamanten (HDNV) in Abhängigkeit von der magnetischen Flussdichte B für die Bestrahlung des HD-NV-Diamanten (HDNV) mit einer Pumpstrahlung (LB) einen typischen Verzögerungsanstieg des Fluoreszenzverzögerungswerts (englisch: increase) von mehr als 0,01% und/oder von mehr als 0,02% und/oder von mehr als 0,05% und/oder von mehr als 0,1% und/oder von mehr als 0,2% und/oder von mehr als 0,5% und/oder von mehr als 1% und/oder von mehr als 2% und/oder von mehr als 5% bei einer auf den HD-NV-Diamanten (HDNV) einwirkenden externen kennzeichnenden magnetischen Flussdichte (B) von etwa 34,0 mT (E_34.0,0) zeigt, der auf eine NV-NV-Wechselwirkung und damit einen geringen mittleren Abstand zwischen äquivalenten, also gleichausgerichteten NV-Zentren hinweist.

Features 74: Use of a 34.0mT HD NV diamond (HDNV) for a quantum technological device, in particular as a sensor element of a quantum technological sensor system,

• ▪ wherein the 34.0mT HD-NV Diamond (HDNV) crystal has one or more paramagnetic centers and/or one or more pairs of coupled paramagnetic centers and/or one or more clusters of paramagnetic centers and/or one or more clusters of pairs coupled paramagnetic centers includes and
• ▪ where paramagnetic centers of the paramagnetic centers include NV centers and
• ▪ where in particular the paramagnetic centers can be coupled to nuclear spins of atoms in the vicinity of paramagnetic centers of these paramagnetic centers;
• ▪ where the fluorescence retardation curve of the fluorescence retardation value of the time delay of the fluorescence radiation (FL) of the HD-NV diamond (HDNV) as a function of the magnetic flux density B for the irradiation of the HD-NV diamond (HDNV) with a pump radiation (LB) shows a typical one Delay increase in fluorescence retardation value greater than 0.01% and/or greater than 0.02% and/or greater than 0.05% and/or greater than 0.1% and/or greater than 0.2% and/or more than 0.5% and/or more than 1% and/or more than 2% and/or more than 5% in the case of a diamond based on HDNV (HDNV ) acting external characteristic magnetic flux density (B) of about 34.0 mT (E _34.0,0 ), which indicates an NV-NV interaction and thus a small mean distance between equivalent, i.e. aligned NV centers.

Features XII (Using a HD iP Diamond)

• ▪ wobei der HD-iP-Diamant (HDNV) eine hohe Dichte an gleichartigen und äquivalenten paramagnetischen Zentren, also gleichausgerichteten paramagnetischen Zentren gleicher Art, aufweist und
• ▪ wobei die Fluoreszenzintensitätskurve des Fluoreszenzintensitätswerts der Intensität der Fluoreszenzstrahlung (FL) des HD-iP-Diamanten (HDNV) in Abhängigkeit von der magnetischen Flussdichte B für die Bestrahlung des HD-NV-Diamanten (HDNV) mit einer Pumpstrahlung (LB) einen typischen Intensitätsabfall des Fluoreszenzintensitätswerts (englisch: Dip) von mehr als 0,01% und/oder von mehr als 0,02% und/oder von mehr als 0,05% und/oder von mehr als 0,1% und/oder von mehr als 0,2% und/oder von mehr als 0,5% und/oder von mehr als 1% und/oder von mehr als 2% und/oder von mehr als 5% bei einer auf den HD-NV-Diamanten (HDNV) einwirkenden externen kennzeichnenden magnetischen Flussdichte (B), der auf eine Wechselwirkung zwischen Paaren gleicher und äquivalenter paramagnetischer Zentren und damit einen geringen mittleren Abstand zwischen äquivalenten, also gleichausgerichteten paramagnetischen Zentren hinweist.

Feature 75: Use of a HD-iP diamond (HDNV) for a quantum technological device, in particular as a sensor element of a quantum technological sensor system,

• ▪ where the HD-iP diamond (HDNV) has a high density of similar and equivalent paramagnetic centers, i.e. paramagnetic centers of the same type aligned in the same way, and
• ▪ where the fluorescence intensity curve of the fluorescence intensity value of the intensity of the fluorescence radiation (FL) of the HD-iP diamond (HDNV) as a function of the magnetic flux density B for the irradiation of the HD-NV diamond (HDNV) with a pump radiation (LB) shows a typical intensity drop fluorescence intensity value (Dip) greater than 0.01% and/or greater than 0.02% and/or greater than 0.05% and/or greater than 0.1% and/or greater than 0.2% and/or greater than 0.5% and/or greater than 1% and/or greater than 2% and/or greater than 5% at an external characteristic magnetic flux density (B ), which indicates an interaction between pairs of like and equivalent paramagnetic centers and thus a small mean distance between equivalent, i.e. like-aligned, paramagnetic centers.

• ▪ wobei der HD-iP-Diamant (HDNV) eine hohe Dichte an gleichartigen und äquivalenten paramagnetischen Zentren, also gleichausgerichteten paramagnetischen Zentren gleicher Art, aufweist und
• ▪ wobei die Fluoreszenzverzögerungskurve des Fluoreszenzverzögerungswerts der zeitlichen Verzögerung der Intensität der Fluoreszenzstrahlung (FL) des HD-iP-Diamanten (HDNV) in Abhängigkeit von der magnetischen Flussdichte B für die Bestrahlung des HD-NV-Diamanten (HDNV) mit einer Pumpstrahlung (LB) einen typischen Verzögerungsanstieg des Fluoreszenzverzögerungswerts (englisch: increase) von mehr als 0,01% und/oder von mehr als 0,02% und/oder von mehr als 0,05% und/oder von mehr als 0,1% und/oder von mehr als 0,2% und/oder von mehr als 0,5% und/oder von mehr als 1% und/oder von mehr als 2% und/oder von mehr als 5% bei einer auf den HD-NV-Diamanten (HDNV) einwirkenden externen kennzeichnenden magnetischen Flussdichte (B), der auf eine Wechselwirkung zwischen Paaren gleicher und äquivalenter paramagnetischer Zentren und damit einen geringen mittleren Abstand zwischen äquivalenten, also gleichausgerichteten paramagnetischen Zentren hinweist.

Feature 76: Use of a HD-iP diamond (HDNV) for a quantum technological device, in particular as a sensor element of a quantum technological sensor system,

• ▪ where the HD-iP diamond (HDNV) has a high density of similar and equivalent paramagnetic centers, i.e. paramagnetic centers of the same type aligned in the same way, and
• ▪ where the fluorescence retardation curve of the fluorescence retardation value of the time delay of the intensity of the fluorescence radiation (FL) of the HD-iP diamond (HDNV) as a function of the magnetic flux density B for the irradiation of the HD-NV diamond (HDNV) with a pump radiation (LB) a typical delay increase in fluorescence delay value greater than 0.01% and/or greater than 0.02% and/or greater than 0.05% and/or greater than 0.1% and/or greater than 0.2% and/or greater than 0.5% and/or greater than 1% and/or greater than 2% and/or greater than 5% for any on the HD NV diamonds (HDNV) acting external characteristic magnetic flux density (B), which indicates an interaction between pairs of equal and equivalent paramagnetic centers and thus a small mean distance between equivalent, i.e. aligned paramagnetic centers.

• ▪ wobei paramagnetische Zentren der paramagnetischen Zentren NV-Zentren umfassen.

Feature 77: Use of a 0.0mT HD-NV diamond (HDNV) for a quantum technological device according to feature 75 or 76,

• ▪ where paramagnetic centers of the paramagnetic centers include NV centers.

Features XIII (Using a 0.0mT HD-NV Diamond)

• ▪ wobei der Kristall des 0,0mT-HD-NV-Diamanten (HDNV) ein oder mehrere paramagnetische Zentren und/oder ein oder mehrere Paare gekoppelter paramagnetischer Zentren und/oder ein oder mehrere Cluster paramagnetischer Zentren und/oder ein oder mehrere Cluster von Paaren gekoppelter paramagnetischer Zentren umfasst und
• ▪ wobei insbesondere die paramagnetischen Zentren an nukleare Spins von Atomen in der Umgebung paramagnetischer Zentren dieser paramagnetischen Zentren koppelbar sein können;
• ▪ wobei die Fluoreszenzintensitätskurve des Fluoreszenzintensitätswerts der Intensität der Fluoreszenzstrahlung (FL) des 0,0mT-HD-NV-Diamanten (HDNV) in Abhängigkeit von der magnetischen Flussdichte B für die Bestrahlung des 0,0mT-HD-NV-Diamanten (HDNV) mit einer Pumpstrahlung (LB) einen typischen Intensitätsabfall (englisch: Dip) von mehr als 0,01% und/oder von mehr als 0,02% und/oder von mehr als 0,05% und/oder von mehr als 0,1% und/oder von mehr als 0,2% und/oder von mehr als 0,5% und/oder von mehr als 1% und/oder von mehr als 2% und/oder von mehr als 5% bei einer auf den 0,0mT-HD-NV-Diamanten (HDNV) einwirkenden externen kennzeichnenden magnetischen Flussdichte (B) von etwa 0,0 mT (E_0.0,0) zeigt.

Feature 78: Use of a 0.0mT HD NV diamond (HDNV) for a quantum technological device, in particular as a sensor element of a quantum technological sensor system,

• ▪ wherein the 0.0mT HD-NV Diamond (HDNV) crystal has one or more paramagnetic centers and/or one or more pairs of coupled paramagnetic centers and/or one or more clusters of paramagnetic centers and/or one or more clusters of pairs coupled paramagnetic centers includes and
• ▪ where in particular the paramagnetic centers can be coupled to nuclear spins of atoms in the vicinity of paramagnetic centers of these paramagnetic centers;
• ▪ where the fluorescence intensity curve of the fluorescence intensity value of the intensity of the fluorescence radiation (FL) of the 0.0mT HD-NV diamond (HDNV) as a function of the magnetic flux density B for the irradiation of the 0.0mT HD-NV diamond (HDNV) with a pump radiation (LB) a typical intensity drop (dip) of more than 0.01% and/or more than 0.02% and/or more than 0.05% and/or more than 0.1% and/or more than 0.2% and/or more than 0.5% and/or more than 1% and/or more than 2% and/or more than 5% with one on the 0, 0mT-HD-NV-Diamonds (HDNV) exposed external characteristic magnetic flux density (B) of about 0.0 mT (E _0.0,0 ).

• ▪ wobei der Kristall des 0,0mT-HD-NV-Diamanten (HDNV) ein oder mehrere paramagnetische Zentren und/oder ein oder mehrere Paare gekoppelter paramagnetischer Zentren und/oder ein oder mehrere Cluster paramagnetischer Zentren und/oder ein oder mehrere Cluster von Paaren gekoppelter paramagnetischer Zentren umfasst und
• ▪ wobei insbesondere die paramagnetischen Zentren an nukleare Spins von Atomen in der Umgebung paramagnetischer Zentren dieser paramagnetischen Zentren koppelbar sein können;
• ▪ wobei die Fluoreszenzverzögerungskurve des Fluoreszenzverzögerungswerts der zeitlichen Verzögerung der Intensität der Fluoreszenzstrahlung (FL) des 0,0mT-HD-NV-Diamanten (HDNV) in Abhängigkeit von der magnetischen Flussdichte B für die Bestrahlung des 0,0mT-HD-NV-Diamanten (HDNV) mit einer Pumpstrahlung (LB) einen typischen Verzögerungsanstieg (englisch: increase) von mehr als 0,01% und/oder von mehr als 0,02% und/oder von mehr als 0,05% und/oder von mehr als 0,1% und/oder von mehr als 0,2% und/oder von mehr als 0,5% und/oder von mehr als 1% und/oder von mehr als 2% und/oder von mehr als 5% bei einer auf den 0,0mT-HD-NV-Diamanten (HDNV) einwirkenden externen magnetischen Flussdichte (B) von etwa 0,0 mT (E_0.0,0) zeigt.

Feature 79: Use of a 0.0mT HD NV diamond (HDNV) for a quantum technological device, in particular as a sensor element of a quantum technological sensor system,

• ▪ wherein the 0.0mT HD-NV Diamond (HDNV) crystal has one or more paramagnetic centers and/or one or more pairs of coupled paramagnetic centers and/or one or more clusters of paramagnetic centers and/or one or more clusters of pairs coupled paramagnetic centers includes and
• ▪ where in particular the paramagnetic centers can be coupled to nuclear spins of atoms in the vicinity of paramagnetic centers of these paramagnetic centers;
• ▪ where the fluorescence retardation curve of the fluorescence retardation value of the time delay of the intensity of the fluorescence radiation (FL) of the 0.0mT HD-NV diamond (HDNV) as a function of the magnetic flux density B for the irradiation of the 0.0mT HD-NV diamond ( HDNV) with a pump radiation (LB) a typical delay increase (English: increase) of more than 0.01% and/or more than 0.02% and/or more than 0.05% and/or more than 0.1% and/or more than 0.2% and/or more than 0.5% and/or greater than 1% and/or greater than 2% and/or greater than 5% at an external magnetic flux density (B) acting on the 0.0mT HD-NV diamond (HDNV) of about 0 .0 mT (E _0.0.0 ).

• ▪ wobei paramagnetische Zentren der paramagnetischen Zentren NV-Zentren und/ und/oder ein ST1-Zentren und/oder ein TR12-Zentren und/oder ein SIV-Zentren und/oder ein GeV-Zentren umfassen, wobei NV-Zentren ganz besonders bevorzugt sind.

Feature 80: Use of a 0.0mT HD-NV Diamond (HDNV) for a quantum technological device according to Feature 78 or 79,

• ▪ wherein paramagnetic centers of the paramagnetic centers comprise NV centers and/or a ST1 centers and/or a TR12 centers and/or a SIV centers and/or a GeV centers, with NV centers being very particularly preferred .

• ▪ wobei der 0,0mT-HD-NV-Diamant (HDNV) zumindest in einem Bereich eine hohe Dichte paramagnetischer Zentren aufweist und
• ▪ wobei diese hohe Dichte paramagnetischer Zentren dadurch gekennzeichnet ist,
• ▪ dass die Fluoreszenzintensitätskurve des Fluoreszenzintensitätswerts der Intensität der Fluoreszenzstrahlung (FL) des (FL) des 0,0mT-HD-NV-Diamanten (HDNV) in Abhängigkeit von der magnetischen Flussdichte B für die Bestrahlung des 0,0mT-HD-NV-Diamanten (HDNV) in diesem Bereich mit einer Pumpstrahlung (LB) einen typischen Intensitätsabfall (englisch: Dip) von mehr als 0,01% und/oder von mehr als 0,02% und/oder von mehr als 0,05% und/oder von mehr als 0,1% und/oder von mehr als 0,2% und/oder von mehr als 0,5% und/oder von mehr als 1% und/oder von mehr als 2% und/oder von mehr als 5% bei einer auf den 0,0mT-HD-NV-Diamanten (HDNV) einwirkenden externen kennzeichnenden magnetischen Flussdichte (B) von etwa 0,0 mT (E_0.0,0) zeigt.

Feature 81: 0.0mT HD NV Diamond (HDNV),

• ▪ wherein the 0.0mT HD-NV diamond (HDNV) has a high density of paramagnetic centers in at least one area and
• ▪ where this high density of paramagnetic centers is characterized by
• ▪ that the fluorescence intensity curve of the fluorescence intensity value of the intensity of the fluorescence radiation (FL) of the (FL) of the 0.0mT HD-NV diamond (HDNV) as a function of the magnetic flux density B for the irradiation of the 0.0mT HD-NV diamond (HDNV) in this area with a pump radiation (LB) a typical drop in intensity (English: dip) of more than 0.01% and/or more than 0.02% and/or more than 0.05% and/or more than 0.1% and/or more than 0.2% and/or more than 0.5% and/or more than 1% and/or more than 2% and/or more than 5 % at an external characteristic magnetic flux density (B) of about 0.0 mT (E _0.0,0 ) acting on the 0.0mT HD-NV diamond (HDNV).

• ▪ wobei der 0,0mT-HD-NV-Diamant (HDNV) zumindest in einem Bereich eine hohe Dichte paramagnetischer Zentren aufweist und
• ▪ wobei diese hohe Dichte paramagnetischer Zentren dadurch gekennzeichnet ist,
• ▪ dass die Fluoreszenzverzögerungskurve des Fluoreszenzverzögerungswerts der zeitlichen Verzögerung der Modulation der Intensität der Fluoreszenzstrahlung (FL) des (FL) des 0,0mT-HD-NV-Diamanten (HDNV) gegenüber der Modulation der Pumpstrahlung (LB) oder der Modulation des Modulationssignals (S5) oder eines daraus abgeleiteten Signals in Abhängigkeit von der magnetischen Flussdichte B für die Bestrahlung des 0,0mT-HD-NV-Diamanten (HDNV) in diesem Bereich mit einer Pumpstrahlung (LB) einen typischen Verzögerungsanstieg (englisch: increase) des Fluoreszenzverzögerungswerts von mehr als 0,01% und/oder von mehr als 0,02% und/oder von mehr als 0,05% und/oder von mehr als 0,1% und/oder von mehr als 0,2% und/oder von mehr als 0,5% und/oder von mehr als 1% und/oder von mehr als 2% und/oder von mehr als 5% bei einer auf den 0,0mT-HD-NV-Diamanten (HDNV) einwirkenden externen kennzeichnenden magnetischen Flussdichte (B) von etwa 0,0 mT (E_0.0,0) zeigt.

Feature 82: 0.0mT HD NV Diamond (HDNV),

• ▪ wherein the 0.0mT HD-NV diamond (HDNV) has a high density of paramagnetic centers in at least one area and
• ▪ where this high density of paramagnetic centers is characterized by
• ▪ that the fluorescence retardation curve of the fluorescence retardation value of the time delay of the modulation of the intensity of the fluorescence radiation (FL) of the (FL) of the 0.0mT HD-NV diamond (HDNV) versus the modulation of the pump radiation (LB) or the modulation of the modulation signal (S5 ) or a signal derived therefrom as a function of the magnetic flux density B for the irradiation of the 0.0mT HD-NV diamond (HDNV) in this area with a pump radiation (LB) shows a typical increase in the fluorescence retardation value of more than 0.01% and/or more than 0.02% and/or more than 0.05% and/or more than 0.1% and/or more than 0.2% and/or more than 0.5% and/or greater than 1% and/or greater than 2% and/or greater than 5% at an external characteristic magnetic flux density acting on the 0.0mT HD-NV diamond (HDNV). (B) of about 0.0 mT (E _0.0,0 ).

• ▪ wobei paramagnetische Zentren der paramagnetischen Zentren NV-Zentren und/ und/oder ein ST1-Zentren und/oder ein TR12-Zentren und/oder ein SIV-Zentren und/oder ein GeV-Zentren umfassen, wobei NV-Zentren ganz besonders bevorzugt sind.

Feature 83: 0.0mT HD NV Diamonds (HDNV) Feature 81 or 82,

• ▪ wherein paramagnetic centers of the paramagnetic centers comprise NV centers and/or a ST1 centers and/or a TR12 centers and/or a SIV centers and/or a GeV centers, with NV centers being very particularly preferred .

• ▪ wobei die quantentechnologische Vorrichtung einen 0,0mT-HD-NV-Diamanten (HDNV), insbesondere als Sensorelement, umfasst und
• ▪ wobei der 0,0mT-HD-NV-Diamant (HDNV) zumindest in einem Bereich eine hohe Dichte paramagnetischer Zentren aufweist und
• ▪ wobei diese hohe Dichte paramagnetischer Zentren dadurch gekennzeichnet ist,
• ▪ dass die Fluoreszenzintensitätskurve des Fluoreszenzintensitätswerts der Intensität der Fluoreszenzstrahlung (FL) des 0,0mT-HD-NV-Diamanten (HDNV) in Abhängigkeit von der magnetischen Flussdichte B für die Bestrahlung des 0,0mT-HD-NV-Diamanten (HDNV) mit einer Pumpstrahlung (LB) einen typischen Intensitätsabfall (englisch: Dip) von mehr als 0,01% und/oder von mehr als 0,02% und/oder von mehr als 0,05% und/oder von mehr als 0,1% und/oder von mehr als 0,2% und/oder von mehr als 0,5% und/oder von mehr als 1% und/oder von mehr als 2% und/oder von mehr als 5% bei einer auf den 0,0mT-HD-NV-Diamanten (HDNV) einwirkenden externen kennzeichnenden magnetischen Flussdichte (B) von etwa 0,0 mT (E_0.0,0) zeigt.

Feature 84: Quantum technological device, in particular a quantum technological sensor system,

• ▪ wherein the quantum technological device comprises a 0.0mT HD-NV diamond (HDNV), in particular as a sensor element, and
• ▪ wherein the 0.0mT HD-NV diamond (HDNV) has a high density of paramagnetic centers in at least one area and
• ▪ where this high density of paramagnetic centers is characterized by
• ▪ that the fluorescence intensity curve of the fluorescence intensity value of the intensity of the fluorescence radiation (FL) of the 0.0mT HD-NV diamond (HDNV) as a function of the magnetic flux density B for the irradiation of the 0.0mT HD-NV diamond (HDNV) with a pump radiation (LB) a typi drop in intensity (English: dip) of more than 0.01% and/or more than 0.02% and/or more than 0.05% and/or more than 0.1% and/or more than 0.2% and/or more than 0.5% and/or more than 1% and/or more than 2% and/or more than 5% at a rate based on the 0.0mT-HD-NV- Diamond (HDNV) shows external characteristic magnetic flux density (B) of about 0.0 mT (E _0.0.0 ).

• ▪ wobei die quantentechnologische Vorrichtung einen 0,0mT-HD-NV-Diamanten (HDNV), insbesondere als Sensorelement, umfasst und
• ▪ wobei der 0,0mT-HD-NV-Diamant (HDNV) zumindest in einem Bereich eine hohe Dichte paramagnetischer Zentren aufweist und
• ▪ wobei diese hohe Dichte paramagnetischer Zentren dadurch gekennzeichnet ist, ▪ dass die Fluoreszenzverzögerungskurve des Fluoreszenzverzögerungswerts der zeitlichen Verzögerung der Modulation der Intensität der Fluoreszenzstrahlung (FL) des 0,0mT-HD-NV-Diamanten (HDNV) gegenüber der Modulation der Pumpstrahlung (λ_pmp) oder der Modulation des Modulationssignals (S5) oder eines daraus abgeleiteten Signals in Abhängigkeit von der magnetischen Flussdichte B für die Bestrahlung des 0,0mT-HD-NV-Diamanten (HDNV) mit einer Pumpstrahlung (LB) einen typischen Verzögerungsanstieg (englisch: Increase) des Fluoreszenzverzögerungswerts von mehr als 0,01% und/oder von mehr als 0,02% und/oder von mehr als 0,05% und/oder von mehr als 0,1% und/oder von mehr als 0,2% und/oder von mehr als 0,5% und/oder von mehr als 1% und/oder von mehr als 2% und/oder von mehr als 5% bei einer auf den 0,0mT-HD-NV-Diamanten (HDNV) einwirkenden externen kennzeichnenden magnetischen Flussdichte (B) von etwa 0,0 mT (E_0.0,0) zeigt.

Feature 85: Quantum technological device, in particular a quantum technological sensor system,

• ▪ wherein the quantum technological device comprises a 0.0mT HD-NV diamond (HDNV), in particular as a sensor element, and
• ▪ wherein the 0.0mT HD-NV diamond (HDNV) has a high density of paramagnetic centers in at least one area and
• ▪ wherein this high density of paramagnetic centers is characterized by ▪ that the fluorescence retardation curve of the fluorescence retardation value of the time lag of the modulation of the fluorescence radiation (FL) intensity of the 0.0mT HD-NV diamond (HDNV) versus the modulation of the pump radiation (λ _pmp ) or the modulation of the modulation signal (S5) or a signal derived from it as a function of the magnetic flux density B for the irradiation of the 0.0mT HD-NV diamond (HDNV) with a pump radiation (LB) a typical delay increase (English: Increase ) the fluorescence retardation value greater than 0.01% and/or greater than 0.02% and/or greater than 0.05% and/or greater than 0.1% and/or greater than 0.2% and/or greater than 0.5% and/or greater than 1% and/or greater than 2% and/or greater than 5% for a 0.0mT HD NV diamond (HDNV) acting external characteristic magnetic flux density (B) of about 0.0 mT (E _{0. 0.0} ).

• ▪ wobei paramagnetische Zentren der paramagnetischen Zentren NV-Zentren und/ und/oder ein ST1-Zentren und/oder ein TR12-Zentren und/oder ein SIV-Zentren und/oder ein GeV-Zentren umfassen, wobei NV-Zentren ganz besonders bevorzugt sind.

Feature 86: Quantum technological device according to feature 84 and/or 85,

• ▪ wherein paramagnetic centers of the paramagnetic centers comprise NV centers and/or a ST1 centers and/or a TR12 centers and/or a SIV centers and/or a GeV centers, with NV centers being very particularly preferred .

• ▪ wobei die quantentechnologische Vorrichtung ein Quantensensor zur Bestimmung eines Werts einer physikalischen Größe ist, die den Fluoreszenzintensitätswert der Intensität der Fluoreszenzstrahlung (FL) des 0,0mT-HD-NV-Diamanten (HDNV) und/oder Fluoreszenzverzögerungswerts der zeitlichen Verzögerung der Modulation der Intensität der Fluoreszenzstrahlung (FL) des 0,0mT-HD-NV-Diamanten (HDNV) gegenüber der Modulation der Pumpstrahlung (LB) oder der Modulation des Modulationssignals (S5) oder der Modulation eines daraus abgeleiteten Signals beeinflusst.

Feature 87: Quantum technological device according to one or more of features 84 to 86,

• ▪ wherein the quantum technological device is a quantum sensor for determining a value of a physical quantity, the fluorescence intensity value of the intensity of the fluorescence radiation (FL) of the 0.0mT HD-NV diamond (HDNV) and/or fluorescence delay value of the time delay of the modulation of the intensity of the fluorescence radiation (FL) of the 0.0mT HD-NV diamond (HDNV) versus the modulation of the pump radiation (LB) or the modulation of the modulation signal (S5) or the modulation of a signal derived therefrom.

• ▪ wobei der 0,0mT-HD-NV-Diamant (HDNV) zumindest in einem Bereich eine hohe Dichte paramagnetischer Zentren aufweist und
• ▪ wobei Pumpstrahlung (LB) zumindest einen Bereich des 0,0mT-HD-NV-Diamanten (HDNV) mit einer mit der modulierten Pumpstrahlung (LB) bestrahlt und
• ▪ wobei die Fluoreszenzverzögerungskurve des Fluoreszenzverzögerungswerts der Modulation der Intensität der Fluoreszenzstrahlung (FL) gegenüber der Modulation einer Pumpstrahlung (LB) oder gegenüber der Modulation eines Modulationssignals (S5) oder gegenüber der Modulation eines daraus abgeleiteten Signals in Abhängigkeit von der magnetischen Flussdichte B einen typischen Verzögerungsanstieg (englisch: Increase) dieser zeitlichen Verzögerung von mehr als 0,01% und/oder von mehr als 0,02% und/oder von mehr als 0,05% und/oder von mehr als 0,1% und/oder von mehr als 0,2% und/oder von mehr als 0,5% und/oder von mehr als 1% und/oder von mehr als 2% und/oder von mehr als 5% bei einer auf den 0,0mT-HD-NV-Diamanten (HDNV) einwirkenden externen magnetischen Flussdichte (B) von etwa 0,0 mT (Eo.o,o) zeigt.

Feature 88: Use of a 0.0mT HD NV diamond (HDNV) for a quantum technological device, in particular as a sensor element of a quantum technological sensor system,

• ▪ wherein the 0.0mT HD-NV diamond (HDNV) has a high density of paramagnetic centers in at least one area and
• ▪ wherein pump radiation (LB) irradiates at least one area of the 0.0mT HD-NV diamond (HDNV) with a modulated pump radiation (LB) and
• ▪ where the fluorescence retardation curve of the fluorescence retardation value of the modulation of the intensity of the fluorescence radiation (FL) versus the modulation of a pump radiation (LB) or versus the modulation of a modulation signal (S5) or versus the modulation of a signal derived therefrom as a function of the magnetic flux density B shows a typical increase in retardation (English: Increase) of this time delay of more than 0.01% and/or more than 0.02% and/or more than 0.05% and/or more than 0.1% and/or more than 0.2% and/or more than 0.5% and/or more than 1% and/or more than 2% and/or more than 5% at an on the 0.0mT-HD-NV -Diamonds (HDNV) showing external magnetic flux density (B) of about 0.0 mT (Eo.o,o).

• ▪ wobei paramagnetische Zentren der paramagnetischen Zentren NV-Zentren und/ und/oder ein ST1-Zentren und/oder ein TR12-Zentren und/oder ein SIV-Zentren und/oder ein GeV-Zentren umfassen, wobei NV-Zentren ganz besonders bevorzugt sind.

Feature 89: Use of a 0.0mT HD-NV Diamond (HDNV) according to Feature 88,

• ▪ wherein paramagnetic centers of the paramagnetic centers comprise NV centers and/or a ST1 centers and/or a TR12 centers and/or a SIV centers and/or a GeV centers, with NV centers being very particularly preferred .

• ▪ wobei der 0,0mT-HD-NV-Diamant (HDNV) zumindest in einem Bereich eine hohe Dichte paramagnetischer Zentren aufweist und
• ▪ wobei diese hohe Dichte paramagnetischer Zentren dadurch gekennzeichnet ist,
• ▪ dass der Fluoreszenzverzögerungswert der zeitlichen Verzögerung der Modulation der Intensität der Fluoreszenzstrahlung (FL) des 0,0mT-HD-NV-Diamanten (HDNV) gegenüber der Modulation eines Modulationssignal (S5) oder der Modulation einer Pumpstrahlung (LB) bei Bestrahlung mit einer mit der modulierten Pumpstrahlung (LB) einen typischen Verzögerungsanstieg (englisch: Increase) dieses Fluoreszenzverzögerungswerts der zeitlichen Verzögerung von mehr als 0,01% und/oder von mehr als 0,02% und/oder von mehr als 0,05% und/oder von mehr als 0,1% und/oder von mehr als 0,2% und/oder von mehr als 0,5% und/oder von mehr als 1% und/oder von mehr als 2% und/oder von mehr als 5% bei einer auf den 0,0mT-HD-NV-Diamanten (HDNV) einwirkenden externen kennzeichnenden magnetischen Flussdichte (B) von etwa 0,0 mT (E_0.0,0) zeigt.

Feature 90: 0.0mT HD NV Diamonds (HDNV),

• ▪ wherein the 0.0mT HD-NV diamond (HDNV) has a high density of paramagnetic centers in at least one area and
• ▪ where this high density of paramagnetic centers is characterized by
• ▪ that the fluorescence delay value of the time delay of the modulation of the intensity of the fluorescence radiation (FL) of the 0.0mT HD-NV diamond (HDNV) compared to the modulation of a modulation signal (S5) or the modulation of a pump radiation (LB) when irradiated with a with of the modulated pump radiation (LB) a typical increase of this fluorescence delay value of the time delay of more than 0.01% and/or of more than 0.02% and/or of more than 0.05% and/or of more than 0.1% and/or more than 0.2% and/or more than 0.5% and/or more than 1% and/or more than 2% and/or more than 5% at an external characteristic magnetic flux density (B) of about 0.0 mT (E _0.0.0 ) acting on the 0.0mT HD-NV diamond (HDNV).

• ▪ wobei paramagnetische Zentren der paramagnetischen Zentren NV-Zentren und/ und/oder ein ST1-Zentren und/oder ein TR12-Zentren und/oder ein SIV-Zentren und/oder ein GeV-Zentren umfassen, wobei NV-Zentren ganz besonders bevorzugt sind.

Feature 91 0.0mT HD NV Diamond (HDNV) to Feature 90,

• ▪ wherein paramagnetic centers of the paramagnetic centers comprise NV centers and/or a ST1 centers and/or a TR12 centers and/or a SIV centers and/or a GeV centers, with NV centers being very particularly preferred .

• ▪ wobei die quantentechnologische Vorrichtung einen 0,0mT-HD-NV-Diamanten (HDNV), insbesondere als Sensorelement, umfasst und
• ▪ wobei der 0,0mT-HD-NV-Diamant (HDNV) zumindest in einem Bereich eine hohe Dichte paramagnetischer Zentren aufweist und
• ▪ wobei diese hohe Dichte paramagnetischer Zentren dadurch gekennzeichnet ist,
• ▪ dass der Fluoreszenzverzögerungswert der zeitlichen Verzögerung der Modulation der Intensität der Fluoreszenzstrahlung (FL) des 0,0mT-HD-NV-Diamanten (HDNV) gegenüber der Modulation eines Modulationssignal (S5) oder der Modulation einer Pumpstrahlung (LB) bei Bestrahlung des Bereiches mit einer mit der modulierten Pumpstrahlung (LB) einen typischen Verzögerungsanstieg (englisch: increase) dieses Fluoreszenzverzögerungswert der zeitlichen Verzögerung von mehr als 0,01% und/oder von mehr als 0,02% und/oder von mehr als 0,05% und/oder von mehr als 0,1% und/oder von mehr als 0,2% und/oder von mehr als 0,5% und/oder von mehr als 1% und/oder von mehr als 2% und/oder von mehr als 5% bei einer auf den 0,0mT-HD-NV-Diamanten (HDNV) einwirkenden externen kennzeichnenden magnetischen Flussdichte (B) von etwa 0,0 mT (E_0.0,0) zeigt.

Feature 92: Quantum technological device, in particular quantum technological sensor system,

• ▪ wherein the quantum technological device comprises a 0.0mT HD-NV diamond (HDNV), in particular as a sensor element, and
• ▪ wherein the 0.0mT HD-NV diamond (HDNV) has a high density of paramagnetic centers in at least one area and
• ▪ where this high density of paramagnetic centers is characterized by
• ▪ that the fluorescence delay value of the time delay of the modulation of the intensity of the fluorescence radiation (FL) of the 0.0mT HD-NV diamond (HDNV) compared to the modulation of a modulation signal (S5) or the modulation of a pump radiation (LB) when the area is irradiated with one with the modulated pump radiation (LB) a typical delay increase (English: increase) this fluorescence delay value of the time delay of more than 0.01% and/or more than 0.02% and/or more than 0.05% and/or or more than 0.1% and/or more than 0.2% and/or more than 0.5% and/or more than 1% and/or more than 2% and/or more than 5% at an external characteristic magnetic flux density (B) of about 0.0 mT (E _0.0,0 ) acting on the 0.0mT HD-NV diamond (HDNV).

• ▪ wobei paramagnetische Zentren der paramagnetischen Zentren NV-Zentren und/ und/oder ein ST1-Zentren und/oder ein TR12-Zentren und/oder ein SIV-Zentren und/oder ein GeV-Zentren umfassen, wobei NV-Zentren ganz besonders bevorzugt sind.

Feature 93 Quantum technological device according to Feature 92

• ▪ wherein paramagnetic centers of the paramagnetic centers comprise NV centers and/or a ST1 centers and/or a TR12 centers and/or a SIV centers and/or a GeV centers, with NV centers being very particularly preferred .

• ▪ wobei die quantentechnologische Vorrichtung ein Quantensensor zur Bestimmung eines Werts einer physikalischen Größe ist, die die zeitliche Verzögerung der Modulation der Intensität der Fluoreszenzstrahlung (FL) des 0,0mT-HD-NV-Diamanten (HDNV) gegenüber der Modulation eines Modulationssignals (S5) oder der Modulation einer Pumpstrahlung (LB) beeinflusst.

Feature 94: Quantum technological device according to feature 92 or 93,

• ▪ wherein the quantum technological device is a quantum sensor for determining a value of a physical variable that is the time delay of the modulation of the intensity of the fluorescence radiation (FL) of the 0.0mT HD-NV diamond (HDNV) compared to the modulation of a modulation signal (S5) or the modulation of a pump radiation (LB).

Features XIV (Diamond with 59.5mT NV-NV coupling and 59mT HD-NV diamond)

• ▪ mit einem oder mehreren NV-Zentren-Paaren jeweils zweier gekoppelter NV-Zentren,
• ▪ wobei der Diamant (HDNV) für die Verwendung in einer quantentechnologischen Vorrichtung und/oder in einem quantentechnologischen Verfahren bestimmt ist,

dadurch gekennzeichnet,

• ▪ dass die Fluoreszenzintensitätskurve der Fluoreszenzintensitätswerts der Intensität der Fluoreszenzstrahlung (FL) des NV-Zentren-Paares in Abhängigkeit von der magnetischen Flussdichte B bei Bestrahlung mit einer Pumpstrahlung (LB) mit einer Pumpstrahlungswellenlänge (λ_pmp) in Abhängigkeit vom Wert der magnetischen Flussdichte (B) eines zum Diamanten externen magnetischen Feldes einen typischen Intensitätsabfall (englisch: Dip) des Fluoreszenzintensitätswerts der Intensität der Fluoreszenzstrahlung (FL) von mehr als 2% und/oder von mehr als 5% bei einer auf den Diamanten einwirkenden externen magnetischen Flussdichte (B) von etwa 59,5mT (E_59.1,0) zeigt, der auf eine NV-NV-Wechselwirkung und damit einen geringen mittleren Abstand zwischen den NV-Zentren des NV-Zentren-Paares hinweist.

Feature 95: Diamond (HDNV)

• ▪ with one or more NV center pairs of two coupled NV centers each,
• ▪ where the diamond (HDNV) is intended for use in a quantum technological device and/or in a quantum technological process,

characterized,

• ▪ that the fluorescence intensity curve of the fluorescence intensity value of the intensity of the fluorescence radiation (FL) of the pair of NV centers as a function of the magnetic flux density B upon irradiation with a pump radiation (LB) with a pump radiation wavelength (λ _pmp ) as a function of the value of the magnetic flux density (B ) of a magnetic field external to the diamond a typical intensity drop (dip) of the fluorescence intensity value of the intensity of the fluorescence radiation (FL) of more than 2% and/or of more than 5% at an external magnetic flux density (B) acting on the diamond of about 59.5mT (E _59.1.0 ), which indicates an NV-NV interaction and thus a small mean distance between the NV centers of the NV center pair.

• ▪ mit einem oder mehreren NV-Zentren-Paaren jeweils zweier gekoppelter NV-Zentren,
• ▪ wobei der Diamant (HDNV) für die Verwendung in einer quantentechnologischen Vorrichtung und/oder in einem quantentechnologischen Verfahren bestimmt ist,

dadurch gekennzeichnet,

• ▪ dass die Fluoreszenzverzögerungskurve der Fluoreszenzverzögerungswerts der zeitlichen Verzögerung der Modulation der Intensität der Fluoreszenzstrahlung (FL) des NV-Zentren-Paares gegenüber der Modulation der Pumpstrahlung (LB) oder der Modulation des Modulationssignals (S5) oder der Modulation eines davon abgeleiteten Signals bei Bestrahlung mit einer Pumpstrahlung (LB) mit einer Pumpstrahlungswellenlänge (λ_pmp) in Abhängigkeit vom Wert der magnetischen Flussdichte (B) eines zum Diamanten externen magnetischen Feldes einen typischen Verzögerungsanstiegs (englisch: increase) des Fluoreszenzverzögerungswerts der zeitlichen Verzögerung der Modulation der Intensität der Fluoreszenzstrahlung (FL) von mehr als 2% und/oder von mehr als 5% bei einer auf den Diamanten einwirkenden externen magnetischen Flussdichte (B) von etwa 59,5mT (E_59.1,0) zeigt, der auf eine NV-NV-Wechselwirkung und damit einen geringen mittleren Abstand zwischen den NV-Zentren des NV-Zentren-Paares hinweist.

Feature 96: Diamond (HDNV)

• ▪ with one or more NV center pairs of two coupled NV centers each,
• ▪ where the diamond (HDNV) is intended for use in a quantum technological device and/or in a quantum technological process,

characterized,

• ▪ that the fluorescence delay curve of the fluorescence delay value of the time delay of the modulation of the intensity of the fluorescence radiation (FL) of the NV center pair versus the modulation of the pump radiation (LB) or the modulation of the modulation signal (S5) or the modulation of a signal derived therefrom upon irradiation with a pump radiation (LB) with a pump radiation wavelength (λ _pmp ) as a function of the value of the magnetic flux density (B) of a magnetic field external to the diamond of more than 2% and/or more than 5% with an external magnetic flux density (B) acting on the diamond of about 59.5mT (E _59.1.0 ), which indicates an NV-NV interaction and thus a low mean distance between the NV centers of the NV center pair.

• ▪ mit einer Vielzahl untereinander gekoppelter NV-Zentren in einer Vielzahl von NV-Zentren-Paaren,
• ▪ wobei der HD-NV-Diamant (HDNV) für die Verwendung in einer quantentechnologischen Vorrichtung und/oder in einem quantentechnologischen Verfahren bestimmt ist, dadurch gekennzeichnet,
• ▪ dass die Fluoreszenzintensitätskurve der Fluoreszenzintensitätswerts der Intensität der Fluoreszenzstrahlung (FL) des HD-NV-Diamanten (HDNV) bei Bestrahlung mit einer Pumpstrahlung (LB) mit einer Pumpstrahlungswellenlänge (λ_pmp) in Abhängigkeit vom Wert der magnetischen Flussdichte (B) eines zum HD-NV-Diamanten externen magnetischen Feldes einen typischen Intensitätsabfall (englisch: Dip) des Fluoreszenzintensitätswerts der Intensität der Fluoreszenzstrahlung (FL) von mehr als 2% und/oder von mehr als 5% bei einer auf den HD-NV-Diamanten (HDNV) einwirkenden externen magnetischen Flussdichte (B) von etwa 59,5mT (E_59.1,0) zeigt, der auf eine NV-NV-Wechselwirkung und damit einen geringen mittleren Abstand zwischen den NV-Zentren hinweist.

Feature 97: HD-NV Diamond (HDNV)

• ▪ with a large number of interconnected NV centers in a large number of NV center pairs,
• ▪ wherein the HD-NV diamond (HDNV) is intended for use in a quantum technological device and/or in a quantum technological method, characterized in that
• ▪ that the fluorescence intensity curve of the fluorescence intensity value of the intensity of the fluorescence radiation (FL) of the HD-NV diamond (HDNV) when irradiated with a pump radiation (LB) with a pump radiation wavelength (λ _pmp ) as a function of the value of the magnetic flux density (B) of an HD -NV-Diamonds external magnetic field a typical intensity drop (dip) of the fluorescence intensity value of the fluorescence radiation (FL) intensity of more than 2% and/or of more than 5% when acting on the HD-NV-Diamond (HDNV). external magnetic flux density (B) of about 59.5mT (E _59.1.0 ) indicating a NV-NV interaction and thus a small mean distance between the NV centers.

• ▪ wobei der HD-NV-Diamant (HDNV) eine Drei-Spin-Kopplung zwischen NV-NV-P1 oder NV-P1-P1 aufweist,
• ▪ wobei NV-NV-P1 eine Kopplung zwischen einem ersten NV-Zentrum und einem zweiten NV-Zentrum, das vom ersten NV-Zentrum verschieden ist, und einem ersten P1-Zentrum meint und
• ▪ wobei NV-P1-P1 eine Kopplung zwischen einem ersten NV-Zentrum und einem ersten P1-Zentrum und einem zweiten P1-Zentrum, das vom ersten P1-Zentrum verschieden ist, meint.

Feature 98 HD-NV Diamond (HDNV) to feature 95 or 97

• ▪ where the HD-NV Diamond (HDNV) has a three-spin coupling between NV-NV-P1 or NV-P1-P1,
• ▪ where NV-NV-P1 means a coupling between a first NV center and a second NV center different from the first NV center and a first P1 center and
• ▪ where NV-P1-P1 means a coupling between a first NV center and a first P1 center and a second P1 center different from the first P1 center.

• ▪ wobei der HD-NV-Diamant (HDNV) eine Kopplung von magnetisch äquivalenten NV-Zentren und/oder die Kopplung von magnetisch nicht äquivalenten, d.h. inäquivalenten, NV-Zentren aufweist.

Feature 99: HD-NV diamond (HDNV) according to feature 95 to 98,

• ▪ where the HD-NV diamond (HDNV) has a coupling of magnetically equivalent NV centers and/or the coupling of magnetically non-equivalent, ie inequivalent, NV centers.

• ▪ wobei die Fluoreszenzintensitätskurve des Fluoreszenzintensitätswerts der Intensität der Fluoreszenzstrahlung (FL) der NV-Zentren in Diamant in Abhängigkeit von der magnetischen Flussdichte (B) Merkmale in der Intensitätsverlauf der Fluoreszenzstrahlung (B) in Form von Extrema in Abhängigkeit von der magnetischen Flussdichte (B) insbesondere nahe einer kennzeichnenden magnetischen Flussdicht von ca. 102mT (E_102.4,0), aufweist, im Folgenden auch als Fluoreszenzstrahlungsmerkmale bezeichnet, die als Merkmale (E_GSLAC13C, E_120.4,1a, E_120.4,1b, E_120.4,2a, E_120.4,2b, E_120.4,3a, E_120.4,3b, E_120.4,4a, E_120.4,4b, E_120.4,5a, E_120.4,5b, E_120.4,6a, E_120.4,6b) einer Kopplung zwischen Paaren aus einem oder mehreren NV-Zentren und einem Isotop mit einem nuklearen Spin, insbesondere dem nuklearen Spin eines ¹³C-Isotops, aufgefasst werden können.

Feature 100: HD-NV diamond (HDNV) according to one or more of features 95 to 99,

• ▪ where the fluorescence intensity curve of the fluorescence intensity value of the intensity of the fluorescence radiation (FL) of the NV centers in diamond as a function of the magnetic flux density (B) features in the intensity profile of the fluorescence radiation (B) in the form of extrema as a function of the magnetic flux density (B) 102mT (E _102.4.0 ), in particular near a characteristic magnetic flux density, hereinafter also referred to as fluorescence radiation characteristics, which as characteristics (E _GSLAC13C , E _120.4.1a , E _120.4.1b , E _120.4.2a , E _{120.4 ,2b} , E _120.4.3a , E _120.4.3b , E _120.4.4a , E _120.4.4b , E _120.4.5a , E _120.4.5b , E _120.4.6a , E _120.4.6b ) a coupling between pairs of one or several NV centers and an isotope with a nuclear spin, in particular the nuclear spin of a ¹³ C isotope.

• ▪ wobei der HD-NV-Diamant einen Abfall des Fluoreszenzintensitätswerts der Intensität der Fluoreszenzstrahlung (FL) bei 0mT bis 10mT und/oder ca. 34mT (E_34,0) und/oder 51mT (E_51,0) und/oder 59,5mT (E_59.5,0) und/oder 9,5mT (E_9.5,0) und/oder 102,4mT (E_102.4,0) aufweist.

Feature 101 HD-NV diamond (HDNV) according to one or more of features 95 to 100,

• ▪ wherein the HD-NV diamond has a drop in fluorescence intensity value of the intensity of the fluorescence radiation (FL) at 0mT to 10mT and/or approx. 34mT (E _34.0 ) and/or 51mT (E _51.0 ) and/or 59, 5mT (E _59.5.0 ) and/or 9.5mT (E _9.5.0 ) and/or 102.4mT (E _102.4.0 ).

• ▪ wobei der HD-NV-Diamant (HDNV) eine Kopplung von zumindest zwei magnetisch äquivalenten NV-Zentren aufweist und
• ▪ wobei zwei NV-Zentren dann magnetisch äquivalent sind, wenn sie die gleiche Ausrichtung innerhalb des Diamantkristalls aufweisen.

Feature 102: HD-NV diamond (HDNV) according to one or more of features 95 to 101,

• ▪ wherein the HD-NV diamond (HDNV) has a coupling of at least two magnetically equivalent NV centers and
• ▪ where two NV centers are magnetically equivalent if they have the same orientation within the diamond crystal.

• ▪ wobei der HD-NV-Diamant (HDNV) eine Kopplung von zumindest zwei magnetisch inäquivalenten NV-Zentren aufweist und
• ▪ wobei zwei NV-Zentren dann magnetisch inäquivalent sind, wenn sie eine unterschiedliche Ausrichtung innerhalb des Diamantkristalls aufweisen.

Feature 103: HD-NV diamond (HDNV) according to one or more of features 95 to 102,

• ▪ wherein the HD-NV diamond (HDNV) has a coupling of at least two magnetically inequivalent NV centers and
• ▪ where two NV centers are magnetically inequivalent if they have a different orientation within the diamond crystal.

• ▪ wobei der HD-NV-Diamant (HDNV) eine Vielzahl von Kopplungen von magnetisch äquivalenten NV-Zentren und/oder eine Vielzahl von Kopplungen von magnetisch inäquivalenten NV-Zentren aufweist.

Feature 104: HD-NV diamond (HDNV) according to one or more of features 95 to 103

• ▪ wherein the HD-NV diamond (HDNV) has a plurality of couplings of magnetically equivalent NV centers and/or a plurality of couplings of magnetically inequivalent NV centers.

• ▪ mit einem HD-NV-Diamanten (HDNV)
• ▪ wobei der HD-NV-Diamant (HDNV) zumindest in einem Bereich eine hohe Dichte paramagnetischer Zentren aufweist und
• ▪ wobei diese hohe Dichte paramagnetischer Zentren dadurch gekennzeichnet ist,
• ▪ dass die Fluoreszenzintensitätskurve des Fluoreszenzintensitätswerts der Intensität der Fluoreszenzstrahlung (FL) des HD-NV-Diamanten (HDNV) bei Bestrahlung mit einer Pumpstrahlung (LB) einen typischen Intensitätsabfall (englisch: Dip) (E_59.5,0) des Fluoreszenzintensitätswerts von mehr als 2% und/oder von mehr als 5% bei einer auf den HD-NV-Diamanten (HDNV) einwirkenden externen magnetischen Flussdichte (B) von etwa 59,5mT zeigt, der auf eine NV-NV-Wechselwirkung und damit einen geringen mittleren Abstand zwischen den NV-Zentren hinweist und/oder
• ▪ dass der HD-NV-Diamant (HDNV) ein Diamant nach einem oder mehreren der Merkmale 95 bis 104 ist.

Feature 105: Quantum technological device, in particular quantum technological sensor system,

• ▪ with a HD-NV diamond (HDNV)
• ▪ wherein the HD-NV diamond (HDNV) has a high density of paramagnetic centers in at least one area and
• ▪ where this high density of paramagnetic centers is characterized by
• ▪ that the fluorescence intensity curve of the fluorescence intensity value of the intensity of the fluorescence radiation (FL) of the HD-NV diamond (HDNV) when irradiated with a pump radiation (LB) shows a typical intensity drop (English: dip) (E _59.5.0 ) of the fluorescence intensity value of more than 2 % and/or of more than 5% with an external magnetic flux density (B) acting on the HD-NV diamond (HDNV) of about 59.5mT, which indicates an NV-NV interaction and thus a small mean distance between informs the NV centers and/or
• ▪ that the HD-NV diamond (HDNV) is a diamond according to one or more of characteristics 95 to 104.

• ▪ mit einem HD-NV-Diamanten (HDNV,)
• ▪ wobei der HD-NV-Diamant (HDNV) zumindest in einem Bereich eine hohe Dichte paramagnetischer Zentren aufweist und
• ▪ wobei diese hohe Dichte paramagnetischer Zentren dadurch gekennzeichnet ist,
• ▪ dass die Fluoreszenzverzögerungskurve des Fluoreszenzverzögerungswerts der zeitlichen Verzögerung der Modulation der Intensität der Fluoreszenzstrahlung (FL) des HD-NV-Diamanten (HDNV) gegenüber der Modulation der Intensität der Pumpstrahlung oder der Modulation der Pumpstrahlung (LB) oder der Modulation des Modulationssignals (S5) oder der Modulation eines daraus abgeleiteten Signals bei Bestrahlung mit einer Pumpstrahlung (LB) einen typischen Verzögerungswertanstieg (englisch: increase) (E_59.5,0) des Fluoreszenzverzögerungswerts von mehr als 2% und/oder von mehr als 5% bei einer auf den HD-NV-Diamanten (HDNV) einwirkenden externen magnetischen Flussdichte (B) von etwa 59,5mT zeigt, der auf eine NV-NV-Wechselwirkung und damit einen geringen mittleren Abstand zwischen den NV-Zentren hinweist und/oder
• ▪ dass der HD-NV-Diamant (HDNV) ein Diamant nach einem oder mehreren der Merkmal 95 bis 104 ist.

Feature 106: Quantum technological device, in particular quantum technological sensor system,

• ▪ with a HD-NV diamond (HDNV,)
• ▪ wherein the HD-NV diamond (HDNV) has a high density of paramagnetic centers in at least one area and
• ▪ where this high density of paramagnetic centers is characterized by
• ▪ that the fluorescence retardation curve of the fluorescence retardation value of the time delay of the modulation of the intensity of the fluorescence radiation (FL) of the HD-NV diamond (HDNV) versus the modulation of the intensity of the pump radiation or the modulation of the pump radiation (LB) or the modulation of the modulation signal (S5) or the modulation of a signal derived therefrom when irradiated with a pump radiation (LB) a typical increase in retardation value (E _59.5.0 ) of the fluorescence retardation value of more than 2% and/or more than 5% with a radiation based on the HD NV-Diamonds (HDNV) external magnetic flux density (B) of about 59.5mT, which indicates an NV-NV interaction and thus a small mean distance between the NV centers and/or
• ▪ That the HD-NV-Diamond (HDNV) is a diamond according to one or more of characteristics 95 to 104.

• ▪ unter Verwendung eines HD-NV-Diamanten (HDNV)
• ▪ dadurch gekennzeichnet,
• ▪ dass die Fluoreszenzintensitätskurve des Fluoreszenzintensitätswerts der Intensität der Fluoreszenzstrahlung (FL) des HD-NV-Diamanten (HDNV) bei Bestrahlung mit einer Pumpstrahlung (LB) einen typischen Intensitätsabfall (englisch: Dip) des Fluoreszenzintensitätswerts von mehr als 2% und/oder von mehr als 5% bei einer auf den HD-NV-Diamanten (HDNV) einwirkenden externen magnetischen Flussdichte (B) von etwa 59,5mT zeigt, der auf eine NV-NV-Wechselwirkung und damit einen geringen mittleren Abstand zwischen den NV-Zentren hinweist und/oder
• ▪ dass der HD-NV-Diamant (HDNV) ein Diamant nach einem oder mehreren der Merkmale 95 bis 104 ist und/oder dass der HD-NV-Diamant (HDNV) einen Diamantbereich umfasst, der Diamant oder ein Diamant nach einem oder mehreren der Merkmale 95 bis 104 ist.

Feature 107: Quantum technological process

• ▪ using a HD-NV diamond (HDNV)
• ▪ characterized by
• ▪ that the fluorescence intensity curve of the fluorescence intensity value of the intensity of the fluorescence radiation (FL) of the HDNV diamond (HDNV) when irradiated with a pump radiation (LB) shows a typical intensity drop (English: dip) of the fluorescence intensity value of more than 2% and/or more than 5% at an external magnetic flux density (B) of about 59.5mT acting on the HD-NV diamond (HDNV), indicating an NV-NV interaction and thus a small mean distance between the NV centers and /or
• ▪ that the HD-NV diamond (HDNV) is a diamond according to one or more of characteristics 95 to 104 and/or that the HD-NV diamond (HDNV) comprises a diamond area that is a diamond or a diamond according to one or more of the Features 95 to 104 is.

• ▪ unter Verwendung eines HD-NV-Diamanten (HDNV)
• ▪ dadurch gekennzeichnet,
• ▪ dass die Fluoreszenzverzögerungskurve des Fluoreszenzverzögerungswerts der zeitlichen Verzögerung der Modulation der Intensität der Fluoreszenzstrahlung (FL) des HD-NV-Diamanten (HDNV) gegenüber der Modulation der Intensität der Pumpstrahlung (LB) oder gegenüber der Modulation des Modulationssignals (S5) oder gegenüber der Modulation eines daraus abgeleiteten Signals bei Bestrahlung mit einer Pumpstrahlung (LB) einen typischen Verzögerungsanstieg (englisch: increase) des Fluoreszenzverzögerungswerts von mehr als 2% und/oder von mehr als 5% bei einer auf den HD-NV-Diamanten (HDNV) einwirkenden externen magnetischen Flussdichte (B) von etwa 59,5mT zeigt, der auf eine NV-NV-Wechselwirkung und damit einen geringen mittleren Abstand zwischen den NV-Zentren hinweist und/oder
• ▪ dass der HD-NV-Diamant (HDNV) ein Diamant nach einem oder mehreren der Merkmale 95 bis 104 ist und/oder dass der HD-NV-Diamant (HDNV) einen Diamantbereich umfasst, der Diamant oder ein Diamant nach einem oder mehreren der Merkmale 95 bis 104 ist.

feature 108; Quantum technological process

• ▪ using a HD-NV diamond (HDNV)
• ▪ characterized by
• ▪ that the fluorescence retardation curve of the fluorescence retardation value of the time delay of the modulation of the intensity of the fluorescence radiation (FL) of the HD-NV diamond (HDNV) versus the modulation of the intensity of the pump radiation (LB) or versus the modulation of the modulation signal (S5) or versus the modulation a signal derived therefrom when irradiated with a pump radiation (LB) shows a typical increase in the fluorescence retardation value of more than 2% and/or more than 5% with an external magnetic acting on the HD-NV diamond (HDNV). Flux density (B) of about 59.5mT, indicating an NV-NV interaction and thus a small mean distance between the NV centers and/or
• ▪ that the HD-NV diamond (HDNV) is a diamond according to one or more of characteristics 95 to 104 and/or that the HD-NV diamond (HDNV) comprises a diamond area that is a diamond or a diamond according to one or more of the Features 95 to 104 is.

Features XV (59mT NV-NV coupling)

• ▪ die Diamant (HDNV) umfasst,
• ▪ wobei die Vorrichtung ein NV-Zentren-Paar zweier gekoppelter NV-Zentren in Diamant aufweist und
• ▪ wobei die quantentechnologische Vorrichtung das NV-Zentren-Paar für die Erfüllung des bestimmungsgemäßem Zweckes nutzt.

Feature 109: Quantum technological device, in particular a quantum technological sensor measurement system,

• ▪ which includes Diamond (HDNV),
• ▪ wherein the device comprises an NV center pair of two coupled NV centers in diamond and
• ▪ wherein the quantum technological device uses the pair of NV centers to fulfill the intended purpose.

• ▪ wobei die Fluoreszenzintensitätskurve des Fluoreszenzintensitätswerts der Intensität der Fluoreszenzstrahlung (FL) des NV-Zentren-Paars des NV-Zentren-Paares des Diamanten (HDNVD) bei Bestrahlung mit einer Pumpstrahlung (LB) mit einer Pumpstrahlungswellenlänge in Abhängigkeit vom Wert der magnetischen Flussdichte (B) eines zum Diamanten externen magnetischen Feldes einen typischen Intensitätsabfall (englisch: Dip) des Fluoreszenzintensitätswerts der Intensität der Fluoreszenzstrahlung (FL) von mehr als 0,01% und/oder von mehr als 0,02% und/oder von mehr als 0,05% und/oder 0,1% und/oder von mehr als 0,2% und/oder von mehr als 0,5% und/oder 1% und/oder von mehr als 2% und/oder von mehr als 5% bei einer auf den Diamanten einwirkenden externen magnetischen Flussdichte (B) von etwa 59,5mT (E_59.1,0) zeigt, der auf eine NV-NV-Wechselwirkung und damit einen geringen mittleren Abstand zwischen den NV-Zentren des NV-Zentren-Paares hinweist.

Feature 110: Quantum technological device according to feature 109,

• ▪ where the fluorescence intensity curve of the fluorescence intensity value of the intensity of the fluorescence radiation (FL) of the NV center pair of the diamond NV center pair (HDNVD) when irradiated with a pump radiation (LB) with a pump radiation wavelength as a function of the value of the magnetic flux density (B ) of a magnetic field external to the diamond a typical intensity drop (dip) of the fluorescence intensity value of the intensity of the fluorescence radiation (FL) of more than 0.01% and/or more than 0.02% and/or more than 0.05 % and/or 0.1% and/or more than 0.2% and/or more than 0.5% and/or 1% and/or more than 2% and/or more than 5% an external magnetic flux density (B) of about 59.5mT (E _59.1.0 ) acting on the diamond, which indicates an NV-NV interaction and thus a small mean distance between the NV centers of the NV center pair .

• ▪ wobei die Fluoreszenzverzögerungskurve des Fluoreszenzintensitätswerts der zeitlichen Verzögerung der Modulation der Intensität der Fluoreszenzstrahlung (FL) des NV-Zentren-Paars des Diamanten (HDNVD) gegenüber der Modulation der Intensität der Pumpstrahlung (LB) oder gegenüber der Modulation des Modulationssignals oder gegenüber der Modulation eines daraus abgeleiteten Signals bei Bestrahlung mit einer Pumpstrahlung (LB) mit einer Pumpstrahlungswellenlänge in Abhängigkeit vom Wert der magnetischen Flussdichte (B) eines zum Diamanten externen magnetischen Feldes einen typischen Verzögerungsanstieg (englisch: Dip) des Fluoreszenzverzögerungswerts der zeitlichen Verzögerung der Modulation der Intensität der Fluoreszenzstrahlung (FL) von mehr als 0,01% und/oder von mehr als 0,02% und/oder von mehr als 0,05% und/oder 0,1% und/oder von mehr als 0,2% und/oder von mehr als 0,5% und/oder 1% und/oder von mehr als 2% und/oder von mehr als 5% bei einer auf den Diamanten einwirkenden externen magnetischen Flussdichte (B) von etwa 59,5mT (E_59.1,0) zeigt, der auf eine NV-NV-Wechselwirkung und damit einen geringen mittleren Abstand zwischen den NV-Zentren des NV-Zentren-Paares hinweist.

Feature 111: Quantum technological device according to feature 109 or 110,

• ▪ where the fluorescence delay curve of the fluorescence intensity value is the time delay of the modulation of the intensity of the fluorescence radiation (FL) of the diamond NV center pair (HDNVD) versus the modulation of the intensity of the pump radiation (LB) or versus the modulation of the modulation signal or versus the modulation of a signal derived therefrom when irradiated with a pump radiation (LB) with a pump radiation wavelength as a function of the value of the magnetic flux density (B) of a magnetic field external to the diamond, a typical increase in delay (English: Dip) of the fluorescence delay value of the time delay of the modulation of the intensity of the fluorescence radiation ( FL) greater than 0.01% and/or greater than 0.02% and/or greater than 0.05% and/or 0.1% and/or greater than 0.2% and/or of more than 0.5% and/or 1% and/or more than 2% and/or more than 5% at an external ma applied to the diamond magnetic flux density (B) of about 59.5mT (E _59.1.0 ) indicating an NV-NV interaction and thus a small mean distance between the NV centers of the NV center pair.

• ▪ wobei die Vorrichtung eine Vielzahl von NV-Zentren-Paaren aufweist.

Feature 112: Quantum technological device according to feature 109 or 110 or 111,

• ▪ wherein the device has a plurality of pairs of NV centers.

• ▪ wobei ein Diamant eine Vielzahl von NV-Zentren-Paaren aufweist.

Feature 113: Quantum technological device according to feature 112

• ▪ where a diamond has a large number of pairs of NV centers.

• ▪ mit einer Pumpstrahlungsquelle (LD) und
• ▪ mit einem Filter (F1) und
• ▪ mit einem Fotodetektor (PD) und
• ▪ mit einer Auswerteeinheit, die insbesondere einen Verstärker und/oder einen Lock-In-Verstärker (LIA) umfassen kann,
• ▪ wobei die Pumpstrahlungsquelle (LD) das NV-Zentren-Paar im Diamanten mit Pumpstrahlung (LB) bestrahlt und
• ▪ wobei das NV-Zentren-Paar Fluoreszenzstrahlung (FL) abstrahlt und
• ▪ wobei der Filter (F1) die Fluoreszenzstrahlung (FL) des NV-Zentren-Paars von der Pumpstrahlung (LB) trennt, sodass im Wesentlichen nur Fluoreszenzstrahlung (FL) insbesondere des NV-Zentren-Paares den Fotodetektor (PD) erreicht und
• ▪ wobei der Fotodetektor (PD) die Intensität der Fluoreszenzstrahlung (FL) des NV-Zentren-Paars und/oder die Verzögerung der Modulation der Intensität der Fluoreszenzstrahlung (FL) des NV-Zentren-Paars gegenüber der Modulation der Intensität der Pumpstrahlung (LB) oder gegenüber der Modulation des Modulationssignals (S5) oder gegenüber der Modulation eines daraus abgeleiteten Signals in einen Wert eines Empfängerausgangssignals (S0) wandelt und
• ▪ wobei der Auswerteeinheit den Wert eines Empfängerausgangssignals (S0) in einen Messwert für eine physikalische Größe wandelt und
• ▪ wobei die physikalische Größe die Intensität der Fluoreszenzstrahlung (FL) des NV-Zentren-Paars und/oder die Verzögerung der Modulation der Intensität der Fluoreszenzstrahlung (FL) des NV-Zentren-Paars gegenüber der Modulation der Intensität der Pumpstrahlung (LB) oder gegenüber der Modulation des Modulationssignals (S5) oder gegenüber der Modulation eines daraus abgeleiteten Signals beeinflusst und
• ▪ wobei die Auswerteeinheit den Messwert für die physikalische Größe bereithält und/oder ausgibt.

Feature 114: Quantum technological device according to one or more of features 109 to 113,

• ▪ with a pump radiation source (LD) and
• ▪ with a filter (F1) and
• ▪ with a photodetector (PD) and
• ▪ with an evaluation unit, which can in particular include an amplifier and/or a lock-in amplifier (LIA),
• ▪ where the pump radiation source (LD) irradiates the pair of NV centers in the diamond with pump radiation (LB) and
• ▪ wherein the pair of NV centers emits fluorescence radiation (FL) and
• ▪ wherein the filter (F1) separates the fluorescence radiation (FL) of the pair of NV centers from the pump radiation (LB), so that essentially only fluorescence radiation (FL) in particular of the pair of NV centers reaches the photodetector (PD) and
• ▪ wherein the photodetector (PD) detects the intensity of the fluorescence radiation (FL) of the pair of NV centers and/or the delay of the modulation of the intensity of the fluorescence radiation (FL) of the pair of NV centers compared to the modulation of the intensity of the pump radiation (LB) or converts the modulation of the modulation signal (S5) or the modulation of a signal derived therefrom into a value of a receiver output signal (S0) and
• ▪ whereby the evaluation unit converts the value of a receiver output signal (S0) into a measured value for a physical quantity and
• ▪ where the physical quantity is the intensity of the fluorescence radiation (FL) of the NV-centre pair and/or the delay of the modulation of the intensity of the fluorescence radiation (FL) of the NV-centre pair versus the modulation of the intensity of the pump radiation (LB) or versus the modulation of the modulation signal (S5) or compared to the modulation of a signal derived therefrom and
• ▪ with the evaluation unit providing and/or outputting the measured value for the physical quantity.

• ▪ wobei das NV-Zentren-Paar einem magnetischen Bias-Feld mit einer magnetischen Flussdichte B mit einem Wert zwischen 57mT und 66mT ausgesetzt ist, wobei ein Bias-Feld von 59,5mT bevorzugt ist.

Feature 115: Quantum technological device according to feature 114,

• ▪ wherein the pair of NV centers is subjected to a magnetic bias field with a magnetic flux density B with a value between 57mT and 66mT, with a bias field of 59.5mT being preferred.

• ▪ wobei die physikalische Größe die magnetische Flussdichte B ist.

Feature 116: Quantum technological device according to feature 114,

• ▪ where the physical quantity is the magnetic flux density B.

• ▪ wobei die physikalische Größe die magnetische Erregung H ist.

Feature 117: Quantum technological device according to feature 114,

• ▪ where the physical quantity is the magnetic excitation H.

• ▪ wobei die physikalische Größe die Beschleunigung a ist.

Feature 118: Quantum technological device according to feature 114,

• ▪ where the physical quantity is the acceleration a.

• ▪ wobei die physikalische Größe die Geschwindigkeit v ist.

Feature 119: Quantum technological device according to feature 114

• ▪ where the physical quantity is the velocity v.

• ▪ wobei die physikalische Größe die elektrische Flussdichte D oder die zeitliche Ableitung der elektrischen Flussdichte D ist.

Feature 120: Quantum technological device according to feature 114,

• ▪ where the physical quantity is the electric flux density D or the time derivative of the electric flux density D.

• ▪ wobei die physikalische Größe die Temperatur ϑ ist.

Feature 121: Quantum technological device according to feature 114,

• ▪ where the physical quantity is the temperature ϑ.

• ▪ wobei die quantentechnologische Vorrichtung ein Empfänger für eine elektromagnetische Welle ist.

Feature 122: Quantum technological device according to one of features 114 to 121,

• ▪ wherein the quantum technological device is a receiver for an electromagnetic wave.

• ▪ wobei die quantentechnologische Vorrichtung den zeitlichen Verlauf der Intensität der Fluoreszenzstrahlung (FL) des NV-Zentren-Paars und/oder den zeitlichen Zerlauf der Verzögerung der Modulation der Intensität der Fluoreszenzstrahlung (FL) des NV-Zentren-Paars gegenüber der Modulation der Intensität der Pumpstrahlung (LB) oder gegenüber der Modulation des Modulationssignals (S5) oder gegenüber der Modulation eines daraus abgeleiteten Signals in einen zeitlichen Verlauf einer Empfangssignals wandelt.

Features 123: quantum technological device according to feature 122,

• ▪ wherein the quantum technological device the temporal progression of the intensity of the fluorescence radiation (FL) of the pair of NV centers and/or the temporal progression of the delay in the modulation of the intensity of the fluorescence radiation (FL) of the pair of NV centers compared to the modulation of the intensity of the Pump radiation (LB) or compared to the modulation of the modulation signal (S5) or compared to the modulation of a signal derived therefrom converts into a time profile of a received signal.

Features XVI

(Diamond with 34mT NV-NV coupling of equivalent NV center pairs and HD-NV diamond)

• ▪ mit einem NV-Zentren-Paar zweier gekoppelter und äquivalenter NV-Zentren,
• ▪ wobei der Diamant (HDNV) für die Verwendung in einer quantentechnologischen Vorrichtung und/oder in einem quantentechnologischen Verfahren bestimmt ist,

dadurch gekennzeichnet,

• ▪ dass die Intensitätswertkurve der Intensität der Fluoreszenzstrahlung (FL) des NV-Zentren-Paares bei Bestrahlung mit einer Pumpstrahlung (LB) mit einer Pumpstrahlungswellenlänge (λ_pmp) in Abhängigkeit vom Wert der magnetischen Flussdichte (B) eines zum Diamanten (HDNV) externen magnetischen Feldes einen typischen Intensitätsabfall (englisch: Dip) des Fluoreszenzintensitätswerts der Intensität der Fluoreszenzstrahlung (FL) und/oder Anstieg des Fluoreszenzverzögerungswerts von mehr als 0,01% und/oder von mehr als 0,02% und/oder von mehr als 0,05% und/oder von mehr als 0,1% und/oder von mehr als 0,2% und/oder von mehr als 0,5% und/oder 1% und/oder von mehr als 2% und/oder von mehr als 5% bei einer auf den Diamanten einwirkenden externen magnetischen Flussdichte (B) von etwa 34,0mT (E_34.0,0) zeigt, der auf eine NV-NV-Wechselwirkung äquivalenter Pare von NV-Zentren und damit einen geringen mittleren Abstand zwischen den äquivalenten NV-Zentren hinweist.

Feature 124: Diamond (HDNV)

• ▪ with an NV center pair of two coupled and equivalent NV centers,
• ▪ where the diamond (HDNV) is intended for use in a quantum technological device and/or in a quantum technological process,

characterized,

• ▪ that the intensity value curve of the intensity of the fluorescence radiation (FL) of the pair of NV centers when irradiated with a pump radiation (LB) with a pump radiation wavelength (λ _pmp ) as a function of the value of the magnetic flux density (B) of a magnetic field external to the diamond (HDNV). rock of a typical dip in fluorescence intensity value of fluorescence radiation (FL) intensity and/or increase in fluorescence retardation value of greater than 0.01% and/or greater than 0.02% and/or greater than 0.05 % and/or more than 0.1% and/or more than 0.2% and/or more than 0.5% and/or 1% and/or more than 2% and/or more than 5% at an external magnetic flux density (B) of about 34.0mT (E _34.0.0 ) acting on the diamond, indicating an NV-NV interaction of equivalent pairs of NV centers and thus a small mean distance between the equivalent ones NV centers indicates.

• ▪ mit einer Vielzahl von NV-NV-Zentren-Paaren aus äquivalenten NV-Zentren,
• ▪ wobei der HD-NV-Diamant (HDNV) für die Verwendung in einer quantentechnologischen Vorrichtung und/oder in einem quantentechnologischen Verfahren bestimmt ist,
• ▪ dadurch gekennzeichnet,
• ▪ dass die Fluoreszenzintensitätskurve des Fluoreszenzintensitätswerts der Intensität der Fluoreszenzstrahlung (FL) des HD-NV-Diamanten (HDNV) bei Bestrahlung mit einer Pumpstrahlung (LB) mit einer Pumpstrahlungswellenlänge in Abhängigkeit vom Wert der magnetischen Flussdichte (B) eines zum HD-NV-Diamanten externen magnetischen Feldes einen typischen Intensitätsabfall (englisch: Dip) des Fluoreszenzintensitätswerts der Intensität der Fluoreszenzstrahlung (FL) von mehr als 0,01% und/oder von mehr als 0,02% und/oder von mehr als 0,05% und/oder 0,1% und/oder von mehr als 0,2% und/oder von mehr als 0,5% und/oder 1% und/oder von mehr als 2% und/oder von mehr als 5% bei einer auf den HD-NV-Diamanten (HDNV) einwirkenden externen magnetischen Flussdichte (B) von etwa 34,0mT (E_34.0,0) zeigt, der auf eine NV-NV-Wechselwirkung äquivalenter Pare von NV-Zentren und damit einen geringen mittleren Abstand zwischen den äquivalenten NV-Zentren hinweist.

Feature 125: HD-NV Diamond (HDNV)

• ▪ with a large number of NV-NV center pairs from equivalent NV centers,
• ▪ where the HD-NV-Diamond (HDNV) is intended for use in a quantum technological device and/or in a quantum technological process,
• ▪ characterized by
• ▪ that the fluorescence intensity curve of the fluorescence intensity value of the intensity of the fluorescence radiation (FL) of the HD-NV diamond (HDNV) when irradiated with a pump radiation (LB) with a pump radiation wavelength as a function of the value of the magnetic flux density (B) of an HD-NV diamond external magnetic field a typical intensity drop (English: dip) of the fluorescence intensity value of the intensity of the fluorescence radiation (FL) of more than 0.01% and/or more than 0.02% and/or more than 0.05% and/or 0.1% and/or more than 0.2% and/or more than 0.5% and/or 1% and/or more than 2% and/or more than 5% at one on the HD -NV diamonds (HDNV) shows an external magnetic flux density (B) of about 34.0mT (E _34.0.0 ) acting on an NV-NV interaction of equivalent pairs of NV centers and thus a small mean distance between the equivalent ones NV centers indicates.

• ▪ wobei der HD-NV-Diamant (HDNV) eine Drei-Spin-Kopplung zwischen NV-NV-P1 oder NV-P1-P1 aufweist,
• ▪ wobei NV-NV-P1 eine Kopplung zwischen einem ersten NV-Zentrum und einem zweiten NV-Zentrum, das vom ersten NV-Zentrum verschieden ist, und einem ersten P1-Zentrum meint und
• ▪ wobei NV-P1-P1 eine Kopplung zwischen einem ersten NV-Zentrum und einem ersten P1-Zentrum und einem zweiten P1-Zentrum, das vom ersten P1-Zentrum verschieden ist, meint.

Feature 126: HD-NV diamond (HDNV) to feature 124 or 125

• ▪ where the HD-NV Diamond (HDNV) has a three-spin coupling between NV-NV-P1 or NV-P1-P1,
• ▪ where NV-NV-P1 means a coupling between a first NV center and a second NV center different from the first NV center and a first P1 center and
• ▪ where NV-P1-P1 means a coupling between a first NV center and a first P1 center and a second P1 center different from the first P1 center.

• ▪ wobei der HD-NV-Diamant (HDNV) auch eine Kopplung von magnetisch nicht äquivalenten, d.h. inäquivalenten, NV-Zentren untereinander aufweist.

Feature 127: HD-NV Diamond (HDNV) according to feature 124 to 126

• ▪ where the HD-NV diamond (HDNV) also shows a coupling of magnetically non-equivalent, ie inequivalent, NV centers among themselves.

• ▪ wobei die Fluoreszenzintensitätskurve des Fluoreszenzintensitätswerts der Intensität der Fluoreszenzstrahlung (FL) des Diamanten (HDNVD) bei Bestrahlung mit einer Pumpstrahlung (LB) mit einer Pumpstrahlungswellenlänge (λ_pmp) in Abhängigkeit vom Wert der magnetischen Flussdichte (B) eines zum Diamanten externen magnetischen Feldes einen typischen Intensitätsabfall (englisch: Dip) des Fluoreszenzintensitätswerts der Intensität der Fluoreszenzstrahlung (FL) von mehr als 0,01% und/oder von mehr als 0,02% und/oder von mehr als 0,05% und/oder 0,1% und/oder von mehr als 0,2% und/oder von mehr als 0,5% und/oder 1% und/oder von mehr als 2% und/oder von mehr als 5% bei einer auf den Diamanten einwirkenden externen magnetischen Flussdichte (B) von etwa 51,0 mT (E_51.0,0) zeigt, der auf eine NV-P1-Wechselwirkung und hinweist.

Feature 128: HD-NV diamond (HDNV) according to one or more of features 124 to 127,

• ▪ where the fluorescence intensity curve of the fluorescence intensity value of the intensity of the fluorescence radiation (FL) of the diamond (HDNVD) when irradiated with a pump radiation (LB) with a pump radiation wavelength (λ _pmp ) as a function of the value of the magnetic flux density (B) of a magnetic field external to the diamond typical intensity drop (dip) of the fluorescence intensity value of the intensity of the fluorescence radiation (FL) of more than 0.01% and/or more than 0.02% and/or more than 0.05% and/or 0.1% and/or greater than 0.2% and/or greater than 0.5% and/or 1% and/or greater than 2% and/or greater than 5% at an external magnetic flux density acting on the diamond (B) of about 51.0 mT (E _51.0.0 ) indicating NV-P1 interaction and .

• ▪ wobei die Fluoreszenzintensitätskurve des Fluoreszenzintensitätswerts der Intensität der Fluoreszenzstrahlung (FL) des Diamanten (HDNVD) bei Bestrahlung mit einer Pumpstrahlung (LB) mit einer Pumpstrahlungswellenlänge in Abhängigkeit vom Wert der magnetischen Flussdichte (B) eines zum Diamanten externen magnetischen Feldes einen typischen Intensitätsabfall (englisch: Dip) des Fluoreszenzintensitätswerts der Intensität der Fluoreszenzstrahlung (FL) von mehr als 0,01% und/oder von mehr als 0,02% und/oder von mehr als 0,05% und/oder 0,1% und/oder von mehr als 0,2% und/oder von mehr als 0,5% und/oder 1% und/oder von mehr als 2% und/oder von mehr als 5% bei einer auf den Diamanten einwirkenden externen magnetischen Flussdichte (B) von etwa 59,5 mT (E_59.5,0) zeigt, der auf eine NV-NV-Wechselwirkung und damit einen geringen mittleren Abstand zwischen den NV-Zentren des NV-Zentren-Paares hinweist.

Feature 129: HD-NV diamond (HDNV) according to one or more of features 124 to 128,

• ▪ where the fluorescence intensity curve of the fluorescence intensity value of the intensity of the fluorescence radiation (FL) of the diamond (HDNVD) when irradiated with a pump radiation (LB) with a pump radiation wavelength as a function of the value of the magnetic flux density (B) of a magnetic field external to the diamond shows a typical intensity drop (English : dip) of the fluorescence intensity value of the intensity of the fluorescence radiation (FL) of more than 0.01% and/or more than 0.02% and/or more than 0.05% and/or 0.1% and/or of more than 0.2% and/or more than 0.5% and/or 1% and/or more than 2% and/or more than 5% in one on the diamond applied external magnetic flux density (B) of about 59.5 mT (E _59.5.0 ), which indicates an NV-NV interaction and thus a small mean distance between the NV centers of the NV center pair.

• ▪ wobei die Fluoreszenzintensitätskurve des Fluoreszenzintensitätswerts der Intensität der Fluoreszenzstrahlung (FL) des Diamanten in Abhängigkeit von der magnetischen Flussdichte (B) Merkmale im Intensitätsverlauf der Fluoreszenzstrahlung (B) Extrema in Abhängigkeit von der magnetischen Flussdichte (B) insbesondere nahe einer magnetischen Flussdicht von ca. 102mT (E_102.4,0), aufweist, im Folgenden auch als Fluoreszenzstrahlungsmerkmale bezeichnet, die als Merkmale (E_GSLAC13C, E_120.4,1a, E_120.4,1b, E_120A,2a, E_120.4,2B, E_120.4,3a, E_120.4,3b, E_120.4,4, E_120.4,4b, E_120.4,5a, E_120.4,5b, E_120.4,6a, E_120.4,6b) einer Kopplung zwischen Paaren aus einem oder mehreren NV-Zentren und einem Isotop mit einem nuklearen Spin, insbesondere dem nuklearen Spin eines ¹³C-Isotops, aufgefasst werden können.

Feature 130: HD-NV diamond (HDNV) according to one or more of features 124 to 129

• ▪ where the fluorescence intensity curve of the fluorescence intensity value of the intensity of the fluorescence radiation (FL) of the diamond as a function of the magnetic flux density (B) features in the intensity profile of the fluorescence radiation (B) extrema as a function of the magnetic flux density (B) in particular close to a magnetic flux density of approx. 102mT (E _102.4.0 ), hereinafter also referred to as fluorescence radiation characteristics, identified as characteristics (E _GSLAC13C , E _120.4.1a , E _{120.4.1b ,} E _120A.2a , E 120.4.2B , E _120.4.3a , E _120.4.3b, E _120.4.4 , E _120.4.4b , E _120.4.5a , E _120.4.5b, E _120.4.6a, E _120.4.6b ) a coupling between pairs of one or more NV centers and an isotope with a nuclear spin, in particular the nuclear spin of a ¹³ C isotope.

• ▪ wobei der HD-NV-Diamant einen Abfall des Fluoreszenzintensitätswerts der Intensität der Fluoreszenzstrahlung bei ca. 34mT (E_34,0) einerseits und andererseits bei 0mT bis 10mT und/oder 51mT (E_51,0) und/oder 59,5mT (E_59.5,0) und/oder 9,5mT (E_9.5,0) und/oder 102,4mT (E_102.4,0) aufweist.

Feature 131: HD-NV diamond (HDNV) according to one or more of features 124 to 130,

• ▪ where the HD-NV diamond shows a drop in the fluorescence intensity value of the intensity of the fluorescence radiation at approx. 34mT (E _34.0 ) on the one hand and at 0mT to 10mT and/or 51mT (E _51.0 ) and/or 59.5mT ( E _59.5.0 ) and/or 9.5mT (E _9.5.0 ) and/or 102.4mT (E _102.4.0 ).

• ▪ wobei der HD-NV-Diamant einen Abfall des Fluoreszenzintensitätswerts der Intensität der Fluoreszenzstrahlung bei 0mT bis 10mT und/oder ca. 34mT (E_34,0) und/oder 51mT (E_51,0) und/oder 59,5mT (E_59.5,0) und/oder 9,5mT (E_9.5,0) und/oder 102,4mT (E_102.4,0) aufweist.

Feature 132: HD-NV diamond (HDNV) according to one or more of features 124 to 131

• ▪ wherein the HD-NV diamond shows a drop in fluorescence intensity value of the intensity of the fluorescence radiation at 0mT to 10mT and/or approx. 34mT (E _34.0 ) and/or 51mT (E _51.0 ) and/or 59.5mT (E _59.5.0 ) and/or 9.5mT (E _9.5.0 ) and/or 102.4mT (E _102.4.0 ).

• ▪ wobei der HD-NV-Diamant (HDNV) eine Kopplung von zumindest zwei magnetisch äquivalenten NV-Zentren aufweist und
• ▪ wobei zwei NV-Zentren dann magnetisch äquivalent sind, wenn sie die gleiche Ausrichtung innerhalb der Diamantkristalls aufweisen.

Characteristics 133: HD-NV diamond (HDNV) according to one or more of characteristics 124 to 132,

• ▪ wherein the HD-NV diamond (HDNV) has a coupling of at least two magnetically equivalent NV centers and
• ▪ where two NV centers are magnetically equivalent if they have the same alignment within the diamond crystal.

• ▪ wobei der HD-NV-Diamant (HDNV) eine Kopplung von zumindest zwei magnetisch inäquivalenten NV-Zentren aufweist und
• ▪ wobei zwei NV-Zentren dann magnetisch inäquivalent sind, wenn sie eine unterschiedliche Ausrichtung innerhalb der Diamantkristalls aufweisen.

Feature 134: HD-NV diamond (HDNV) according to one or more of features 124 to 133,

• ▪ wherein the HD-NV diamond (HDNV) has a coupling of at least two magnetically inequivalent NV centers and
• ▪ where two NV centers are magnetically inequivalent if they have a different alignment within the diamond crystal.

• ▪ wobei der HD-NV-Diamant (HDNV) eine Vielzahl von Kopplungen von magnetisch äquivalenten NV-Zentren und/oder eine Vielzahl von Kopplungen von magnetisch inäquivalenten NV-Zentren aufweist.

Feature 135: HD-NV diamond (HDNV) according to one or more of features 124 to 134,

• ▪ wherein the HD-NV diamond (HDNV) has a plurality of couplings of magnetically equivalent NV centers and/or a plurality of couplings of magnetically inequivalent NV centers.

• ▪ mit einem HD-NV-Diamanten (HDNV)
• ▪ dadurch gekennzeichnet,
• ▪ dass der Fluoreszenzintensitätswert der Intensität der Fluoreszenzstrahlung (FL) des HD-NV-Diamanten (HDNV) bei Bestrahlung mit einer Pumpstrahlung (LB) einen typischen Intensitätsabfall (englisch: Dip) (E_59.5,0) des Fluoreszenzintensitätswerts von mehr als 0,01% und/oder von mehr als 0,02% und/oder von mehr als 0,05% und/oder 0,1% und/oder von mehr als 0,2% und/oder von mehr als 0,5% und/oder 1% und/oder von mehr als 2% und/oder von mehr als 5% bei einer auf den HD-NV-Diamanten (HDNV) einwirkenden externen magnetischen Flussdichte (B) von etwa 34,0mT (E_34.0,0) zeigt, der auf eine NV-NV-Wechselwirkung von NV-Zentren Paaren äquivalenter NV-Zentren und damit einen geringen mittleren Abstand zwischen den NV-Zentren hinweist, und/oder
• ▪ dass der HD-NV-Diamant (HDNV) ein Diamant nach einem oder mehreren der Ansprüche 0 bis 0 ist und/oder dass der HD-NV-Diamant (HDNV) einen Diamantbereich umfasst, der ein Diamant nach einem oder mehreren der Ansprüche 0 bis 0 ist.

Feature 136: Quantum Technological Device

• ▪ with a HD-NV diamond (HDNV)
• ▪ characterized by
• ▪ that the fluorescence intensity value of the intensity of the fluorescence radiation (FL) of the HD-NV diamond (HDNV) when irradiated with a pump radiation (LB) shows a typical intensity drop (English: dip) (E _59.5.0 ) of the fluorescence intensity value of more than 0.01 % and/or more than 0.02% and/or more than 0.05% and/or 0.1% and/or more than 0.2% and/or more than 0.5% and/or or 1% and/or greater than 2% and/or greater than 5% at an external magnetic flux density (B) acting on the HD-NV diamond (HDNV) of about 34.0mT (E _34.0.0 ). , indicating NV-NV interaction of pairs of equivalent NV centers and thus a small mean distance between the NV centers, and/or
• ▪ that the HD-NV diamond (HDNV) is a diamond according to one or more of claims 0 to 0 and/or that the HD-NV diamond (HDNV) comprises a diamond area which is a diamond according to one or more of claims 0 to 0 is.

• ▪ unter Verwendung eines HD-NV-Diamanten (HDNV)
• ▪ dadurch gekennzeichnet,
• ▪ dass die Fluoreszenzintensitätskurve des Fluoreszenzintensitätswerts der Intensität der Fluoreszenzstrahlung (FL) Intensität der Fluoreszenzstrahlung (FL) des HD-NV-Diamanten (HDNV) bei Bestrahlung mit einer Pumpstrahlung (LB) einen typischen Intensitätsabfall (englisch: Dip) des Fluoreszenzintensitätswerts von mehr als 0,01% und/oder von mehr als 0,02% und/oder von mehr als 0,05% und/oder 0,1% und/oder von mehr als 0,2% und/oder von mehr als 0,5% und/oder 1% und/oder von mehr als 2% und/oder von mehr als 5% bei einer auf den HD-NV-Diamanten (HDNV) einwirkenden externen magnetischen Flussdichte (B) von etwa 34,0 mT (E_34.0,0) zeigt, der auf eine NV-NV-Wechselwirkung von NV-Zentren Paaren äquivalenter NV-Zentren und damit einen geringen mittleren Abstand zwischen den NV-Zentren hinweist, und/oder
• ▪ dass der HD-NV-Diamant (HDNV) ein Diamant nach einem oder mehreren der Merkmale 124 bis 135 ist und/oder dass der HD-NV-Diamant (HDNV) einen Diamantbereich umfasst, der ein Diamant nach einem oder mehreren der Merkmale 124 bis 135 ist.

Feature 137: Quantum technological process

• ▪ using a HD-NV diamond (HDNV)
• ▪ characterized by
• ▪ that the fluorescence intensity curve of the fluorescence intensity value of the intensity of the fluorescence radiation (FL) intensity of the fluorescence radiation (FL) of the HD-NV diamond (HDNV) when irradiated with pump radiation (LB) shows a typical intensity drop (dip) of the fluorescence intensity value of more than 0 .01% and/or more than 0.02% and/or more than 0.05% and/or 0.1% and/or more than 0.2% and/or more than 0.5% and/or 1% and/or more than 2% and/or more than 5% at an external magnetic flux density (B) acting on the HD-NV diamond (HDNV) of about 34.0 mT (E _{34.0, 0} ) indicating an NV-NV interaction of NV centers pairs of equivalent NV centers and thus a small mean distance between the NV centers, and/or
• ▪ that the HD-NV diamond (HDNV) is a diamond according to one or more of characteristics 124 to 135 and/or that the HD-NV diamond (HDNV) comprises a diamond area that is a diamond according to one or more of characteristics 124 to 135 is.

Features XVII (equivalent 34 mT-NV-NV coupling)

• ▪ die Diamant (HDNV), insbesondere einen HD-NV-Diamanten nach einem oder mehreren der Ansprüche 0 bis 0, umfasst,
• ▪ wobei die Vorrichtung ein NV-Zentren-Paar zweier gekoppelter äquivalenter NV-Zentren in Diamant aufweist.

Feature 138: Quantum Technological Device

• ▪ the diamond (HDNV), in particular a HD-NV diamond according to one or more of claims 0 to 0, comprises,
• ▪ wherein the device comprises an NV center pair of two coupled equivalent NV centers in diamond.

• ▪ wobei die quantentechnologische Vorrichtung das NV-Zentren-Paar äquivalenter NV-Zentren für die Erfüllung des bestimmungsgemäßen Zweckes nutzt.

Feature 139: Quantum technological device according to feature 138

• ▪ wherein the quantum technological device uses the NV center pair of equivalent NV centers to fulfill the intended purpose.

• ▪ wobei die Fluoreszenzintensitätskurve der Intensität der Fluoreszenzstrahlung (FL) des NV-Zentren-Paars der äquivalenten NV-Zentren des Diamanten (HDNVD) bei Bestrahlung mit einer Pumpstrahlung (LB) mit einer Pumpstrahlungswellenlänge (λ_pmp) in Abhängigkeit vom Wert der magnetischen Flussdichte (B) eines zum Diamanten externen magnetischen Feldes einen typischen Intensitätsabfall (englisch: Dip) der Intensität der Fluoreszenzstrahlung (FL) von mehr als 0,01% und/oder von mehr als 0,02% und/oder von mehr als 0,05% und/oder 0,1% und/oder von mehr als 0,2% und/oder von mehr als 0,5% und/oder 1% und/oder von mehr als 2% und/oder von mehr als 5% bei einer auf den Diamanten einwirkenden externen magnetischen Flussdichte (B) von etwa 34,0mT (E_34.0,0) zeigt, der auf eine NV-NV-Wechselwirkung von NV-Zentren Paaren äquivalenter NV-Zentren und damit einen geringen mittleren Abstand zwischen den NV-Zentren hinweist.

Feature 140: Quantum technological device according to feature 139 or 138,

• ▪ where the fluorescence intensity curve of the intensity of the fluorescence radiation (FL) of the NV center pair of equivalent NV centers of diamond (HDNVD) upon irradiation with a pump radiation (LB) with a pump radiation wavelength (λ _pmp ) as a function of the value of the magnetic flux density ( B) a magnetic field external to the diamond has a typical intensity drop (dip) in the intensity of the fluorescence radiation (FL) of more than 0.01% and/or more than 0.02% and/or more than 0.05% and/or 0.1% and/or more than 0.2% and/or more than 0.5% and/or 1% and/or more than 2% and/or more than 5% at one external magnetic flux density (B) of about 34.0mT (E _34.0.0 ) acting on the diamond, which indicates an NV-NV interaction of NV centers pairs of equivalent NV centers and thus a small mean distance between the NV centers.

• ▪ wobei die Vorrichtung eine Vielzahl von NV-Zentren-Paaren aufweist.

Feature 141: Quantum technological device according to one or more of features 138 to 140,

• ▪ wherein the device has a plurality of pairs of NV centers.

• ▪ wobei ein Diamant eine Vielzahl von NV-Zentren-Paaren aufweist.

Feature 142: Quantum technological device according to feature 141,

• ▪ where a diamond has a large number of pairs of NV centers.

• ▪ mit einer Pumpstrahlungsquelle (LD) und
• ▪ mit einem Filter (F1) und
• ▪ mit einem Fotodetektor (PD) und
• ▪ mit einer Auswerteeinheit, die insbesondere einen Verstärker und/oder einen Lock-In-Verstärker (LIA) umfassen kann,
• ▪ wobei die Pumpstrahlungsquelle (LD) das NV-Zentren-Paar im Diamanten mit Pumpstrahlung (LB) bestrahlt und
• ▪ wobei das NV-Zentren-Paar Fluoreszenzstrahlung (FL) abstrahlt und ▪ wobei der Filter (F1) die Fluoreszenzstrahlung (FL) des NV-Zentren-Paars von der Pumpstrahlung (LB) trennt, sodass im Wesentlichen nur Fluoreszenzstrahlung (FL) insbesondere des NV-Zentren-Paares den Fotodetektor (PD) erreicht und
• ▪ wobei der Fotodetektor (PD) die Intensität der Fluoreszenzstrahlung (FL) des NV-Zentren-Paars in einen Wert eines Empfängerausgangssignals (S0) wandelt und
• ▪ wobei der Auswerteeinheit den Wert eines Empfängerausgangssignals (S0) in einen Messwert für eine physikalische Größe wandelt und
• ▪ wobei die physikalische Größe die Intensität der Fluoreszenzstrahlung (FL) des NV-Zentren-Paars beeinflusst und
• ▪ wobei die Auswerteeinheit den Messwert für die physikalische Größe bereithält und/oder ausgibt.

Feature 143 Quantum technological device according to one or more of features 138 to 142,

• ▪ with a pump radiation source (LD) and
• ▪ with a filter (F1) and
• ▪ with a photodetector (PD) and
• ▪ with an evaluation unit, which can in particular include an amplifier and/or a lock-in amplifier (LIA),
• ▪ where the pump radiation source (LD) irradiates the pair of NV centers in the diamond with pump radiation (LB) and
• ▪ where the pair of NV centers emits fluorescence radiation (FL) and ▪ where the filter (F1) separates the fluorescence radiation (FL) of the pair of NV centers from the pump radiation (LB), so that essentially only fluorescence radiation (FL) in particular of NV centers pair reaches the photodetector (PD) and
• ▪ wherein the photodetector (PD) converts the intensity of the fluorescence radiation (FL) of the pair of NV centers into a value of a receiver output signal (S0), and
• ▪ whereby the evaluation unit converts the value of a receiver output signal (S0) into a measured value for a physical quantity and
• ▪ where the physical quantity influences the intensity of the fluorescence radiation (FL) of the pair of NV centers and
• ▪ with the evaluation unit providing and/or outputting the measured value for the physical quantity.

• ▪ wobei das NV-Zentren-Paar einem magnetischen Bias-Feld mit einer magnetischen Flussdichte B mit einem Wert zwischen 30 mT und 37 mT ausgesetzt ist, wobei ein Bias-Feld von 34,0 mT bevorzugt ist.

Feature 144: Quantum technological device according to feature 143,

• ▪ wherein the pair of NV centers is exposed to a magnetic bias field with a magnetic flux density B with a value between 30 mT and 37 mT, with a bias field of 34.0 mT being preferred.

• ▪ wobei die physikalische Größe die magnetische Flussdichte B ist.

Feature 145: Quantum technological device according to feature 143,

• ▪ where the physical quantity is the magnetic flux density B.

• ▪ wobei die physikalische Größe die Beschleunigung a ist.

Feature 146: Quantum technological device according to feature 143,

• ▪ where the physical quantity is the acceleration a.

• ▪ wobei die physikalische Größe die Geschwindigkeit v ist.

Feature 147: Quantum technological device according to feature 143,

• ▪ where the physical quantity is the velocity v.

• ▪ wobei die physikalische Größe der Ort x relativ zu einem Bezugspunkt in Form eines Abstands oder eines Vektors ist.

Feature 148: Quantum technological device according to feature 143,

• ▪ where the physical quantity is the location x relative to a reference point in the form of a distance or a vector.

• ▪ wobei die physikalische Größe die elektrische Flussdichte D oder die zeitliche Ableitung der elektrischen Flussdichte D ist.

Feature 149: Quantum technological device according to feature 143,

• ▪ where the physical quantity is the electric flux density D or the time derivative of the electric flux density D.

• ▪ wobei die physikalische Größe die Temperatur ϑ ist.

Feature 150: Quantum technological device according to feature 143,

• ▪ where the physical quantity is the temperature ϑ.

• ▪ wobei die quantentechnologische Vorrichtung ein Empfänger für eine elektromagnetische Welle ist.

Feature 151: Quantum technological device according to one or more of 138 to 150,

• ▪ wherein the quantum technological device is a receiver for an electromagnetic wave.

• ▪ wobei die quantentechnologische Vorrichtung den zeitlichen Verlauf der Intensität der Fluoreszenzstrahlung (FL) des NV-Zentren-Paars in einen zeitlichen Verlauf eines Empfangssignals (S0) wandelt.

Feature 152: Quantum technological device according to one or more of 138 to 151,

• ▪ wherein the quantum technological device converts the temporal progression of the intensity of the fluorescence radiation (FL) of the pair of NV centers into a temporal progression of a received signal (S0).

• ▪ mit einer Pumpstrahlungsquelle (LD) und
• ▪ mit einem Filter (F1) und
• ▪ mit einem Fotodetektor (PD) und
• ▪ mit einer Auswerteeinheit, die insbesondere einen Verstärker und/oder einen Lock-In-Verstärker (LIA) umfassen kann,
• ▪ wobei die Pumpstrahlungsquelle (LD) das NV-Zentren-Paar im Diamanten mit einem Modulationssignal modulierten Pumpstrahlung (LB) bestrahlt und
• ▪ wobei das NV-Zentren-Paar eine modulierte Fluoreszenzstrahlung (FL) abstrahlt und
• ▪ wobei der Filter (F1) die Fluoreszenzstrahlung (FL) des NV-Zentren-Paars von der Pumpstrahlung (LB) trennt, sodass im Wesentlichen nur Fluoreszenzstrahlung (FL) insbesondere des NV-Zentren-Paares den Fotodetektor (PD) erreicht und
• ▪ wobei der Fotodetektor (PD) den zeitlichen Intensitätsverlauf der Fluoreszenzstrahlung (FL) des NV-Zentren-Paars in einen zeitlichen Werteverlauf eines Empfängerausgangssignals (S0) wandelt und
• ▪ wobei die Auswerteeinheit die zeitliche Verzögerung des zeitlichen Werteverlaufs des Empfängerausgangssignals (S0) gegenüber dem Modulationssignal (S5) in einen Messwert und/oder einen Messwertverlauf für eine physikalische Größe wandelt und
• ▪ wobei die physikalische Größe die Intensität der Fluoreszenzstrahlung (FL) des NV-Zentren-Paars und die Verzögerung des zeitlichen Intensitätsverlaufs der Modulation der Fluoreszenzstrahlung (FL) des NV-Zentren-Paars gegenüber dem Modulationssignal beeinflusst und
• ▪ wobei das NV-Zentren-Paar einem magnetischen Bias-Feld mit einer magnetischen Flussdichte B mit einem Wert zwischen 30 mT und 37 mT ausgesetzt ist, wobei ein Bias-Feld von 34,0 mT bevorzugt ist, und
• ▪ wobei die Auswerteeinheit den Messwert bzw. Messwertverlauf für die physikalische Größe zumindest teilweise bereithält und/oder ausgibt.

Feature 153: Quantum technological device according to one or more of features 138 to 152,

• ▪ with a pump radiation source (LD) and
• ▪ with a filter (F1) and
• ▪ with a photodetector (PD) and
• ▪ with an evaluation unit, which can in particular include an amplifier and/or a lock-in amplifier (LIA),
• ▪ wherein the pump radiation source (LD) irradiates the pair of NV centers in the diamond with pump radiation (LB) modulated by a modulation signal and
• ▪ wherein the pair of NV centers emits modulated fluorescence radiation (FL) and
• ▪ wherein the filter (F1) separates the fluorescence radiation (FL) of the pair of NV centers from the pump radiation (LB), so that essentially only fluorescence radiation (FL) in particular of the pair of NV centers reaches the photodetector (PD) and
• ▪ wherein the photodetector (PD) converts the time course of the intensity of the fluorescence radiation (FL) of the pair of NV centers into a time course of values of a receiver output signal (S0) and
• ▪ wherein the evaluation unit converts the time delay of the time profile of the receiver output signal (S0) compared to the modulation signal (S5) into a measured value and/or a measured value profile for a physical variable and
• ▪ where the physical variable influences the intensity of the fluorescence radiation (FL) of the pair of NV centers and the delay in the intensity profile over time of the modulation of the fluorescence radiation (FL) of the pair of NV centers compared to the modulation signal and
• ▪ wherein the pair of NV centers is subjected to a magnetic bias field with a magnetic flux density B of a value between 30 mT and 37 mT, with a bias field of 34.0 mT being preferred, and
• ▪ the evaluation unit at least partially providing and/or outputting the measured value or measured value curve for the physical variable.

• ▪ mit einer Ausrichtungsvorrichtung (DMT, RT, HLT),
• ▪ wobei die Ausrichtungsvorrichtung (DMT, RT, HLT) den Diamanten gegenüber einem Magnetfeld mit einer magnetischen Flussdichte (B) ausrichtet.

Feature 154: Quantum technological device according to one or more of features 138 to 153,

• ▪ with an alignment device (DMT, RT, HLT),
• ▪ wherein the alignment device (DMT, RT, HLT) aligns the diamond against a magnetic field with a magnetic flux density (B).

• ▪ mit einer Ausrichtungsvorrichtung (DMT, RT, HLT),
• ▪ wobei die Ausrichtungsvorrichtung (DMT, RT, HLT) ein Einkreisgoniometer oder ein Zweikreisgoniometer oder ein Dreikreisgoniometer umfasst.

Feature 155: Quantum technological device according to one or more of features 138 to 154,

• ▪ with an alignment device (DMT, RT, HLT),
• ▪ wherein the alignment device (DMT, RT, HLT) comprises a single-circle goniometer or a double-circle goniometer or a triple-circle goniometer.

Characteristics XVIII (device with energy reserve)

• ▪ wobei das Quantenmesssystem bzw. die quantentechnologische Vorrichtung Vorrichtungsteile umfassen, die Verbraucher elektrischer Energie sind
• ▪ mit den Schritten
• ▪ Durchführung einer quantentechnologischen Messung unter Zuhilfenahme zumindest eines Quantenpunkts und/oder ein oder mehrerer paramagnetischer Zentren und/oder ein oder mehrerer Paare gekoppelter paramagnetischer Zentren und/oder ein oder mehrerer Gruppen paramagnetischer Zentren und/oder ein oder mehrerer Paare gekoppelter paramagnetischer Zentren ein oder mehrerer Cluster paramagnetischer Zentren und/oder ein oder mehrerer Cluster von Paaren paramagnetischer Zentren und/oder ein oder mehrerer NV-Zentren in Diamant und/oder einer Vielzahl von Quantenpunkten und/oder einer Vielzahl paramagnetischer Zentren und/oder einer Vielzahl von NV-Zentren innerhalb eines ersten Zeitraums und
• ▪ wobei insbesondere die paramagnetischen Zentren an nukleare Spins von Atomen in der Umgebung paramagnetischer Zentren dieser paramagnetischen Zentren koppelbar sein können;
• ▪ Stoppen oder Unterlassen der Durchführung der quantentechnologischen Messung innerhalb eines zweiten Zeitraums,
• ▪ wobei der erste Zeitraum vom zweiten Zeitraum verschieden ist und
• ▪ wobei der erste Zeitraum und der zweite Zeitraum sich zeitlich nicht überlappen,
• ▪ gekennzeichnet dadurch durch den Schritt
• ▪ Versorgen von zumindest eines Teils der Vorrichtungsteile, die Verbraucher elektrischer Energie sind, mit elektrischer Energie in den ersten Zeiträumen, in denen die Messung erfolgt, aus einer Energiereserve (BENG).

Feature 156: Method for operating a quantum measurement system and/or a quantum technological device,

• ▪ wherein the quantum measurement system or the quantum technological device includes device parts that are consumers of electrical energy
• ▪ with the steps
• ▪ Carrying out a quantum technological measurement with the help of at least one quantum dot and/or one or more paramagnetic centers and/or one or more pairs of coupled paramagnetic centers and/or one or more groups of paramagnetic centers and/or one or more pairs of coupled paramagnetic centers of one or more Clusters of paramagnetic centers and/or one or more clusters of pairs of paramagnetic centers and/or one or more NV centers in diamond and/or a multiplicity of quantum dots and/or a multiplicity of paramagnetic centers and/or a multiplicity of NV centers within one first period and
• ▪ where in particular the paramagnetic centers can be coupled to nuclear spins of atoms in the vicinity of paramagnetic centers of these paramagnetic centers;
• ▪ Stopping or refraining from carrying out the quantum technological measurement within a second period of time,
• ▪ where the first period is different from the second period and
• ▪ where the first period and the second period do not overlap in time,
• ▪ Characterized by the step
• ▪ Supplying at least some of the device parts that are consumers of electrical energy with electrical energy from an energy reserve (BENG) in the first time periods in which the measurement takes place.

• ▪ Laden der Energiereserve (BENG) in den zweiten Zeiträumen insbesondere mittels einer Ladevorrichtung (LDV), insbesondere in Form eines Spannungsreglers oder eines Stromreglers.

Feature 157: Method according to feature 156, with the step:

• ▪ Charging the energy reserve (BENG) in the second time periods, in particular by means of a charging device (LDV), in particular in the form of a voltage regulator or a current regulator.

• ▪ wobei die Energiereserve (BENG) eine Batterie, insbesondere eine wiederaufladbare Batterie, und/oder einen Akkumulator und/oder einen Kondensator und/oder eine Spule umfasst

Feature 158: procedure according to feature 156 or 157,

• ▪ wherein the energy reserve (BENG) comprises a battery, in particular a rechargeable battery, and/or an accumulator and/or a capacitor and/or a coil

• ▪ wobei die Energiereserve (BENG) wiederaufladbar ist und
• ▪ wobei das Laden der Energiereserve (BENG) mit Energie mittels einer Ladevorrichtung (LDV) erfolgt,
• ▪ umfassend den Schritt
• ▪ elektrisches Trennen des Ladegeräts (LDV) in den ersten Zeitenräumen, beispielsweise mittels einer Trennvorrichtung (TS), von zumindest einen Teil der anderen Vorrichtungsteilen des Quantenmesssystems und/oder der quantentechnologischen Vorrichtung.

Feature 159: Method according to one or more of features 156 to 158,

• ▪ wherein the energy reserve (BENG) is rechargeable and
• ▪ whereby the energy reserve (BENG) is charged with energy by means of a charging device (LDV),
• ▪ encompassing the step
• ▪ Electrically disconnecting the charging device (LDV) in the first time periods, for example by means of a disconnecting device (TS), from at least some of the other device parts of the quantum measurement system and/or the quantum technological device.

• ▪ wobei die Trennung mittels einer Trennvorrichtung (TS), insbesondere in Form eines Schalter oder eines Transistor oder einer Diode oder eines anderen Halbleiterschalters oder eines Relais oder eines MEMS-Relais oder dergleichen, erfolgt.

Feature 160: procedure according to feature 159,

• ▪ wherein the separation takes place by means of a separation device (TS), in particular in the form of a switch or a transistor or a diode or another semiconductor switch or a relay or a MEMS relay or the like.

• ▪ wobei das Quantenmesssystem und/oder die quantentechnologische Vorrichtung innerhalb eines ersten Zeitraums eine quantentechnologische Messung unter Zuhilfenahme zumindest eines Quantenpunkts und/oder eines paramagnetischen Zentrums und/oder eines NV-Zentrums in Diamant und/oder einer Vielzahl von Quantenpunkten und/oder einer Vielzahl paramagnetische Zentren und/oder einer Vielzahl von NV-Zentren durchführt und
• ▪ wobei das Quantenmesssystem und/oder die quantentechnologische Vorrichtung innerhalb eines zweiten Zeitraums keine quantentechnologische Messung durchführt oder diese stoppt und
• ▪ wobei der erste Zeitraum vom zweiten Zeitraum verschieden ist und
• ▪ wobei der erste Zeitraum und der zweite Zeitraum sich zeitlich nicht überlappen und
• ▪ wobei das Quantenmesssystem und/oder die quantentechnologische Vorrichtung Vorrichtungsteile umfassen, die Verbraucher elektrischer Energie sind,

gekennzeichnet dadurch,

• ▪ dass das Quantenmesssystem und/oder die quantentechnologische Vorrichtung eine Energiereserve (BENG) umfasst und
• ▪ dass diese Energiereserve (BENG) in den ersten Zeiträumen, in denen die quantentechnologische Messung erfolgt, zumindest einen Teil der Verbraucher elektrischer Energie mit elektrischer Energie versorgt.

Feature 161: Quantum measurement system and/or quantum technological device

• ▪ wherein the quantum measurement system and/or the quantum technological device performs a quantum technological measurement within a first period of time with the aid of at least one quantum dot and/or one paramagnetic center and/or one NV center in diamond and/or a multiplicity of quantum dots and/or a multiplicity of paramagnetic centers and/or a variety of NV centers and
• ▪ wherein the quantum measurement system and/or the quantum technological device does not perform a quantum technological measurement within a second period of time or stops it and
• ▪ where the first period is different from the second period and
• ▪ wherein the first period and the second period do not overlap in time and
• ▪ where the quantum measurement system and/or the quantum technological device include device parts that are consumers of electrical energy,

characterized by

• ▪ that the quantum measurement system and/or the quantum technological device includes an energy reserve (BENG) and
• ▪ that this energy reserve (BENG) supplies at least some of the consumers of electrical energy with electrical energy in the first periods in which the quantum technological measurement takes place.

• ▪ wobei das Quantenmesssystem und/oder die quantentechnologische Vorrichtung eine Ladevorrichtung (LDV) umfasst und
• ▪ wobei die Ladevorrichtung, insbesondere in Form eines Spannungsreglers oder eines Stromreglers, in den zweiten Zeiträumen die Energiereserve (BENG) lädt.

Feature 162: quantum measurement system and/or quantum technological device according to feature 161,

• ▪ wherein the quantum measurement system and/or the quantum technological device comprises a charging device (LDV) and
• ▪ wherein the charging device, in particular in the form of a voltage regulator or a current regulator, charges the energy reserve (BENG) in the second time periods.

• ▪ wobei die Energiereserve (BENG) eine Batterie, insbesondere eine wiederaufladbare Batterie, und/oder einen Akkumulator und/oder einen Kondensator und/oder eine Spule und/oder eine mechanische Energiespeichervorrichtung umfasst.

Feature 163: Quantum measurement system and/or quantum technological device according to feature 160 and/or 161,

• ▪ wherein the energy reserve (BENG) comprises a battery, in particular a rechargeable battery, and/or an accumulator and/or a capacitor and/or a coil and/or a mechanical energy storage device.

• ▪ wobei das Quantenmesssystems und/oder die quantentechnologische Vorrichtung eine Trennvorrichtung (TS) aufweist und
• ▪ wobei die Trennvorrichtung (TS) die Ladevorrichtung (LDV) in den ersten Zeitenräumen
  • ◯ von zumindest einem Teil der übrigen Vorrichtungsteile des Quantenmesssystems und/oder der quantentechnologischen Vorrichtung und/oder
  • ◯ von zumindest einem Teil der Vorrichtungsteilen des Quantenmesssystems und/oder der quantentechnologischen Vorrichtung, insbesondere solchen, die gegenüber Schwankungen der elektrischen Versorgungsspannung und/oder Schwankungen des elektrischen Versorgungsstromes empfindlich sind,
  elektrisch trennt.

Feature 164: quantum measurement system and/or quantum technological device according to one or more features 160 to 163,

• ▪ wherein the quantum measurement system and/or the quantum technological device has a separating device (TS) and
• ▪ the Separating Device (TS) being the Loading Device (LDV) in the first time periods
  • ◯ of at least part of the remaining device parts of the quantum measurement system and/or the quantum technological device and/or
  • ◯ of at least some of the device parts of the quantum measurement system and/or the quantum technological device, in particular those that are sensitive to fluctuations in the electrical supply voltage and/or fluctuations in the electrical supply current,
  electrically separates.

• ▪ wobei die Trennvorrichtung (TS) einen Schalter oder einen Transistor oder eine Diode oder einen anderen Halbleiterschalter oder ein Relais oder ein MEMS-Relais oder dergleichen umfasst.

Feature 165: Quantum measurement system and/or quantum technological device according to feature 164,

• ▪ wherein the separating device (TS) comprises a switch or a transistor or a diode or another semiconductor switch or a relay or a MEMS relay or the like.

Characteristics XIX (device with goniometer)

• ▪ mit einem Diamanten (HDNV), insbesondere mit einem HD-NV-Diamanten, und
• ▪ mit zumindest einer Magnetfelderzeugungsvorrichtung (MG) oder einer zur Magnetfelderzeugungsvorrichtung (MG) funktionsäquivalenten Vorrichtung (MGx, MGy, MGz) und
• ▪ mit einem Einkreisgoniometer oder mit einem Zweikreisgoniometer oder mit einem Dreikreisgoniometer, im Folgenden als Goniometer bezeichnet,
• ▪ wobei ein Einkreisgoniometer im Sinne dieses Anspruchs ein Instrument ist, das es ermöglicht, einen Gegenstand um eine Achse in eine Winkelposition bezogen auf einen Winkel relativ zu einem Bezugskörper zu drehen und
• ▪ wobei ein Zweikreisgoniometer im Sinne dieses Anspruchs ein Instrument ist, das es ermöglicht, einen Gegenstand um zwei Achsen in eine Winkelposition bezogen auf zwei Winkel relativ zu einem Bezugskörper zu drehen und
• ▪ wobei ein Dreikreisgoniometer im Sinne dieses Anspruchs ein Instrument ist, das es ermöglicht, einen Gegenstand um drei Achsen in eine Winkelposition bezogen auf drei Winkel relativ zu einem Bezugskörper zu drehen und
• ▪ wobei der Diamant (HDNV) ein oder mehrere paramagnetische Zentren und/oder ein oder mehrere Paare gekoppelter paramagnetischer Zentren und/oder ein oder mehrere Gruppen paramagnetischer Zentren und/oder ein oder mehrere Paare gekoppelter paramagnetischer Zentren ein oder mehrere Cluster paramagnetischer Zentren und/oder ein oder mehrere Cluster von Paaren paramagnetischer Zentren umfasst und
• ▪ wobei paramagnetische Zentren der ein oder mehreren paramagnetischen Zentren ein oder mehrere NV-Zentren und/oder ein oder mehrere ST1-Zentren und/oder ein oder mehrere TR12-Zentren und/oder ein oder mehrere SIV-Zentren und/oder ein oder mehrere GeV-Zentren umfassen und/oder wobei der Diamant (HDNV) ein HD-NV-Diamant ist oder wobei der Diamant (HDNV) einen HD-NV-Diamantbereich umfasst, der die Merkmale eines HD-NV-Diamanten aufweist, und
• ▪ wobei insbesondere die paramagnetischen Zentren an nukleare Spins von Atomen in der Umgebung paramagnetischer Zentren dieser paramagnetischen Zentren koppelbar sein können und
• ▪ wobei der Diamant (HDNV) bei Bestrahlung mit Pumpstrahlung (LB) mit einer Pumpstrahlungswellenlänge (λ_pmp) Fluoreszenzstrahlung (FL) mit einer Fluoreszenzstrahlungswellenlänge (λ_fl) emittiert und
• ▪ wobei die Intensität der Pumpstrahlung (LB) mit einer Modulation in Abhängigkeit von einem Modulationssignal (S5) moduliert sein kann und
• ▪ wobei die Intensität der Fluoreszenzstrahlung (FL) des Diamanten (HDNV) beim Durchstimmen der magnetischen Flussdichte (B) eines Magnetfelds ein Fluoreszenzmerkmal in Form eines Extremums der Intensität der Fluoreszenzstrahlung (FL) bei einer kennzeichnenden magnetischen Flussdichte B entsprechend diesem Fluoreszenzmerkmal zeigt und/oder wobei die zeitliche Verzögerung der Modulation der Intensität der Fluoreszenzstrahlung (FL) des Diamanten (HDNV) gegenüber der Modulation der Intensität der Pumpstrahlung (LB) und/oder gegenüber der Modulation des Modulationssignals (S5) oder gegenüber der Modulation eines daraus abgeleiteten Signals beim Durchstimmen der magnetischen Flussdichte (B) eines Magnetfelds ein Fluoreszenzmerkmal in Form eines Extremums dieser Verzögerung der Modulation der Intensität der Fluoreszenzstrahlung (FL) bei einer kennzeichnenden magnetischen Flussdichte B entsprechend einem Fluoreszenzmerkmal zeigt, wenn der Diamant (HDNV) gegenüber der magnetischen Flussdichte B so ausgerichtet ist, dass die Ausrichtung der paramagnetischen Zentren mit der Richtung der magnetischen Flussdichte B übereinstimmt, und
• ▪ wobei der Diamant (HDNV) mittels des Goniometers im Betrieb des Quantenmesssystems und/oder im Betrieb der quantentechnologischen Vorrichtung zumindest zeitweise so ausgerichtet ist, dass dieses Extremum der Intensität der Fluoreszenzstrahlung (FL) und/oder dieses Extremum der zeitlichen Verzögerung der Modulation der Intensität der Fluoreszenzstrahlung (FL) für den Betrieb des Quantenmesssystems und/oder den Betrieb der quantentechnologischen Vorrichtung wirksam ist.

Feature 166: Quantum measurement system and/or quantum technological device

• ▪ with a diamond (HDNV), in particular with a HD-NV diamond, and
• ▪ with at least one magnetic field generating device (MG) or a device (MGx, MGy, MGz) functionally equivalent to the magnetic field generating device (MG) and
• ▪ with a single-circle goniometer or with a double-circle goniometer or with a triple-circle goniometer, hereinafter referred to as goniometer,
• ▪ wherein a single-circle goniometer within the meaning of this claim is an instrument that makes it possible to rotate an object about an axis to an angular position related to an angle relative to a reference body and
• ▪ wherein a dual-circle goniometer within the meaning of this claim is an instrument that makes it possible to rotate an object about two axes into an angular position based on two angles relative to a reference body and
• ▪ wherein a three-circle goniometer within the meaning of this claim is an instrument that makes it possible to rotate an object about three axes into an angular position related to three angles relative to a reference body and
• ▪ wherein the diamond (HDNV) has one or more paramagnetic centers and/or one or more pairs of coupled paramagnetic centers and/or one or more groups of paramagnetic centers and/or one or more pairs of coupled paramagnetic centers comprises one or more clusters of paramagnetic centers and/or one or more clusters of pairs of paramagnetic centers and
• ▪ wherein paramagnetic centers of the one or more paramagnetic centers are one or more NV centers and/or one or more ST1 centers and/or one or more TR12 centers and/or one or more SIV centers and/or one or more GeV centers and/or wherein the diamond (HDNV) is a HDNV diamond, or wherein the diamond (HDNV) comprises a HDNV diamond region exhibiting the characteristics of a HDNV diamond, and
• ▪ whereby in particular the paramagnetic centers can be coupled to nuclear spins of atoms in the vicinity of paramagnetic centers of these paramagnetic centers and
• ▪ wherein the diamond (HDNV) emits fluorescence radiation (FL) with a fluorescence radiation wavelength (λ _fl ) when irradiated with pump radiation (LB) with a pump radiation wavelength (λ _pmp ) and
• ▪ wherein the intensity of the pump radiation (LB) can be modulated with a modulation depending on a modulation signal (S5) and
• ▪ wherein the intensity of the fluorescence radiation (FL) of the diamond (HDNV) when sweeping the magnetic flux density (B) of a magnetic field shows a fluorescence feature in the form of an extremum of the intensity of the fluorescence radiation (FL) at a characteristic magnetic flux density B corresponding to this fluorescence feature and/or wherein the time delay of the modulation of the intensity of the fluorescence radiation (FL) of the diamond (HDNV) compared to the modulation of the intensity of the pump radiation (LB) and/or compared to the modulation of the modulation signal (S5) or compared to the modulation of a signal derived therefrom when tuning the magnetic flux density (B) of a magnetic field exhibits a fluorescence feature in the form of an extremum of this delay in modulation of the intensity of fluorescence radiation (FL) at a characteristic magnetic flux density B corresponding to a fluorescence feature when diamond (HDNV) versus magnetic flux density B is oriented such that the orientation of the paramagnetic centers coincides with the direction of the magnetic flux density B, and
• ▪ wherein the diamond (HDNV) is at least temporarily aligned by means of the goniometer during operation of the quantum measurement system and/or during operation of the quantum technological device such that this extreme of the intensity of the fluorescence radiation (FL) and/or this extreme of the time delay of the modulation of the intensity the fluorescence radiation (FL) is effective for the operation of the quantum measurement system and/or the operation of the quantum technological device.

• ▪ mit einem HD-NV-Diamanten (HDNV) und
• ▪ mit einer Magnetfelderzeugungsvorrichtung (MG) oder einer zur Magnetfelderzeugungsvorrichtung (MG) funktionsäquivalenten Vorrichtung (MGx, MGy, MGz) und
• ▪ mit einem Einkreisgoniometer oder mit einem Zweikreisgoniometer oder mit einem Dreikreisgoniometer, im Folgenden als Goniometer bezeichnet,
• ▪ wobei ein Einkreisgoniometer im Sinne dieses Anspruchs ein Instrument ist, das es ermöglicht, einen Gegenstand um eine Achse in eine Winkelposition bezogen auf einen Winkel relativ zu einem Bezugskörper zu drehen und
• ▪ wobei ein Zweikreisgoniometer im Sinne dieses Anspruchs ein Instrument ist, das es ermöglicht, einen Gegenstand um zwei Achsen in eine Winkelposition bezogen auf zwei Winkel relativ zu einem Bezugskörper zu drehen und
• ▪ wobei ein Dreikreisgoniometer im Sinne dieses Anspruchs ein Instrument ist, das es ermöglicht, einen Gegenstand um drei Achsen in eine Winkelposition bezogen auf drei Winkel relativ zu einem Bezugskörper zu drehen und
• ▪ wobei der HD-NV-Diamant (HDNV) NV-Zentren, insbesondere Paare von NV-Zentren, umfasst und
• ▪ wobei der HD-NV-Diamant (HDNV) ein oder mehrere paramagnetische Zentren und/oder ein oder mehrere Paare gekoppelter paramagnetischer Zentren und/oder ein oder mehrere Gruppen paramagnetischer Zentren und/oder ein oder mehrere Paare gekoppelter paramagnetischer Zentren ein oder mehrere Cluster paramagnetischer Zentren und/oder ein oder mehrere Cluster von Paaren paramagnetischer Zentren umfasst und
• ▪ wobei paramagnetische Zentren der ein oder mehreren paramagnetischen Zentren NV-Zentren umfassen und
• ▪ wobei die NV-Zentren und/oder der HD-NV-Diamant (HDNV) bei Bestrahlung mit Pumpstrahlung (LB) mit einer Pumpstrahlungswellenlänge (λ_pmp) Fluoreszenzstrahlung (FL) mit einer Fluoreszenzstrahlungswellenlänge (λ_fl) emittiert und
• ▪ wobei die Intensität der Pumpstrahlung (LB) mit einer Modulation in Abhängigkeit von einem Modulationssignal (S5) moduliert sein kann und
• ▪ wobei die Intensität der Fluoreszenzstrahlung (FL) der NV-Zentren und/oder des HD-NV-Diamanten (HDNV) beim Durchstimmen der magnetischen Flussdichte (B) eines Magnetfelds ein Fluoreszenzmerkmal in Form eines Extremums der Intensität der Fluoreszenzstrahlung (FL) bei einer kennzeichnenden magnetischen Flussdichte B entsprechend diesem Fluoreszenzmerkmal zeigt und/oder wobei die zeitliche Verzögerung der Modulation der Intensität der Fluoreszenzstrahlung (FL) der NV-Zentren bzw. des HD-NV-Diamanten (HDNV) gegenüber dem Modulationssignal (S5) oder der Modulation der Intensität der Pumpstrahlung (LB) beim Durchstimmen der magnetischen Flussdichte (B) eines Magnetfelds ein Fluoreszenzmerkmal in Form eines Extremums dieser Verzögerung der Fluoreszenzstrahlung (FL) bei einer kennzeichnenden magnetischen Flussdichte B entsprechend einem Fluoreszenzmerkmal zeigt, wenn der Diamant (HDNV) gegenüber der magnetischen Flussdichte B so ausgerichtet ist, dass die Ausrichtung der paramagnetischen Zentren mit der Richtung der magnetischen Flussdichte B übereinstimmt, und
• ▪ wobei der HD-NV-Diamant mittels des Goniometers im Betrieb des Quantenmesssystems und/oder der quantentechnologischen Vorrichtung zumindest zeitweise so ausgerichtet ist, dass dieses Extremum der Intensität der Fluoreszenzstrahlung (FL) und/oder dieses Extremum der zeitlichen Verzögerung der Modulation der Intensität der Fluoreszenzstrahlung (FL) für den Betrieb des Quantenmesssystems und/oder den Betrieb der quantentechnologischen Vorrichtung wirksam ist.

Feature 167: Quantum measurement system and/or quantum technological device

• ▪ with a HD NV Diamond (HDNV) and
• ▪ with a magnetic field generating device (MG) or a device (MGx, MGy, MGz) functionally equivalent to the magnetic field generating device (MG) and
• ▪ with a single-circle goniometer or with a double-circle goniometer or with a triple-circle goniometer, hereinafter referred to as goniometer,
• ▪ wherein a single-circle goniometer within the meaning of this claim is an instrument that makes it possible to rotate an object about an axis to an angular position related to an angle relative to a reference body and
• ▪ wherein a dual-circle goniometer within the meaning of this claim is an instrument that makes it possible to rotate an object about two axes into an angular position based on two angles relative to a reference body and
• ▪ wherein a three-circle goniometer within the meaning of this claim is an instrument that makes it possible to rotate an object about three axes into an angular position related to three angles relative to a reference body and
• ▪ wherein the HD NV Diamond (HDNV) includes NV centers, particularly pairs of NV centers, and
• ▪ wherein the HD-NV diamond (HDNV) has one or more paramagnetic centers and/or one or more pairs of coupled paramagnetic centers and/or one or more groups of paramagnetic centers and/or one or more pairs of coupled paramagnetic centers one or more clusters of paramagnetic centers and/or one or more clusters of pairs of paramagnetic centers and
• ▪ wherein paramagnetic centers of the one or more paramagnetic centers include NV centers and
• ▪ wherein the NV centers and/or the HD-NV diamond (HDNV) emits fluorescence radiation (FL) with a fluorescence radiation wavelength (λ _fl ) when irradiated with pump radiation (LB) with a pump radiation wavelength (λ _pmp ) and
• ▪ wherein the intensity of the pump radiation (LB) can be modulated with a modulation depending on a modulation signal (S5) and
• ▪ where the intensity of the fluorescence radiation (FL) of the NV centers and/or the HD-NV diamond (HDNV) when sweeping the magnetic flux density (B) of a magnetic field is a fluorescence feature in the form of an extremum of the intensity of the fluorescence radiation (FL) at a characteristic magnetic flux density B corresponding to this fluorescence feature and/or wherein the time delay of the modulation of the intensity of the fluorescence radiation (FL) of the NV centers or of the HD-NV diamond (HDNV) compared to the modulation signal (S5) or the modulation of the intensity of the pump radiation (LB) when sweeping the magnetic flux density (B) of a magnetic field shows a fluorescence feature in the form of an extremum of this delay of the fluorescence radiation (FL) at a characteristic magnetic flux density B corresponding to a fluorescence feature when the diamond (HDNV) versus the magnetic flux density B oriented so that the orientation of the paramagnetic zen tren coincides with the direction of the magnetic flux density B, and
• ▪ whereby the HD-NV diamond is at least temporarily aligned by means of the goniometer during operation of the quantum measurement system and/or the quantum technological device such that this extreme of the intensity of the fluorescence radiation (FL) and/or this extreme of the time delay of the modulation of the intensity of the Fluorescence radiation (FL) is effective for the operation of the quantum measurement system and / or the operation of the quantum technological device.

• ▪ mit einem Diamanten (HDNV), insbesondere mit einem HD-NV-Diamanten, und
• ▪ mit zumindest einer Magnetfelderzeugungsvorrichtung (MG) oder einer zur Magnetfelderzeugungsvorrichtung (MG) funktionsäquivalenten Vorrichtung und
• ▪ mit einem Einkreisgoniometer oder mit einem Zweikreisgoniometer oder mit einem Dreikreisgoniometer, im Folgenden als Goniometer bezeichnet,
• ▪ wobei ein Bereich innerhalb des Diamanten (HDNV) ein HD-NV-Diamantbereich ist, der der Diamant (HDNV) sein kann, und
• ▪ wobei ein Einkreisgoniometer im Sinne dieses Anspruchs ein Instrument ist, das es ermöglicht, einen Gegenstand um eine Achse in eine Winkelposition bezogen auf einen Winkel relativ zu einem Bezugskörper zu drehen und
• ▪ wobei ein Zweikreisgoniometer im Sinne dieses Anspruchs ein Instrument ist, das es ermöglicht, einen Gegenstand um zwei Achsen in eine Winkelposition bezogen auf zwei Winkel relativ zu einem Bezugskörper zu drehen und
• ▪ wobei ein Dreikreisgoniometer im Sinne dieses Anspruchs ein Instrument ist, das es ermöglicht, einen Gegenstand um drei Achsen in eine Winkelposition bezogen auf drei Winkel relativ zu einem Bezugskörper zu drehen und
• ▪ wobei der HD-NV-Diamantbereich innerhalb des Diamanten (HDNV) ein oder mehrere paramagnetische Zentren und/oder ein oder mehrere Paare gekoppelter paramagnetischer Zentren und/oder ein oder mehrere Gruppen paramagnetischer Zentren und/oder ein oder mehrere Paare gekoppelter paramagnetischer Zentren ein oder mehrere Cluster paramagnetischer Zentren und/oder ein oder mehrere Cluster von Paaren paramagnetischer Zentren umfasst und
• ▪ wobei paramagnetische Zentren der ein oder mehreren paramagnetischen Zentren NV-Zentren (NV1, NV2) umfassen und
• ▪ wobei der HD-NV-Diamantbereich bei Bestrahlung mit Pumpstrahlung (LB) mit einer Pumpstrahlungswellenlänge (λ_pmp) Fluoreszenzstrahlung (FL) mit einer Fluoreszenzstrahlungswellenlänge (λ_fl) emittiert und
• ▪ wobei die Intensität der Fluoreszenzstrahlung (FL) der paramagnetischen Zentren und/oder des HD-NV-Diamantbereiches beim Durchstimmen der magnetischen Flussdichte (B) eines Magnetfelds ein Fluoreszenzmerkmal in Form eines Extremums der Intensität der Fluoreszenzstrahlung (FL) bei einer kennzeichnenden magnetischen Flussdichte B entsprechend diesem Fluoreszenzmerkmal zeigt und/oder wobei die zeitliche Verzögerung der Modulation der Intensität der Fluoreszenzstrahlung (FL) der paramagnetischen Zentren bzw. des HD-NV-Diamantbereiches gegenüber dem Modulationssignal (S5) oder der Modulation der Intensität der Pumpstrahlung (LB) beim Durchstimmen der magnetischen Flussdichte (B) eines Magnetfelds ein Fluoreszenzmerkmal in Form eines Extremums dieser Verzögerung der Fluoreszenzstrahlung (FL) bei einer kennzeichnenden magnetischen Flussdichte B entsprechend einem Fluoreszenzmerkmal zeigt, wenn der Diamant (HDNV) gegenüber der magnetischen Flussdichte B so ausgerichtet ist, dass die Ausrichtung der paramagnetischen Zentren mit der Richtung der magnetischen Flussdichte B übereinstimmt, und
• ▪ wobei der HD-NV-Diamantbereich mittels des Goniometers im Betrieb des Quantenmesssystems und/oder der quantentechnologischen Vorrichtung zumindest zeitweise so ausgerichtet ist, dass dieses Extremum der Intensität der Fluoreszenzstrahlung (FL) und/oder dieses Extremum der zeitlichen Verzögerung der Modulation der Intensität der Fluoreszenzstrahlung (FL) für den Betrieb des Quantenmesssystems und/oder den Betrieb der quantentechnologischen Vorrichtung wirksam ist.

Feature 168: Quantum measurement system and/or quantum technological device

• ▪ with a diamond (HDNV), in particular with a HD-NV diamond, and
• ▪ with at least one magnetic field generating device (MG) or a device functionally equivalent to the magnetic field generating device (MG) and
• ▪ with a single-circle goniometer or with a double-circle goniometer or with a triple-circle goniometer, hereinafter referred to as goniometer,
• ▪ wherein a domain within the diamond (HDNV) is a HD-NV diamond domain that may be the diamond (HDNV), and
• ▪ wherein a single-circle goniometer within the meaning of this claim is an instrument that makes it possible to rotate an object about an axis to an angular position related to an angle relative to a reference body and
• ▪ wherein a dual-circle goniometer within the meaning of this claim is an instrument that makes it possible to rotate an object about two axes into an angular position based on two angles relative to a reference body and
• ▪ wherein a three-circle goniometer within the meaning of this claim is an instrument that makes it possible to rotate an object about three axes into an angular position related to three angles relative to a reference body and
• ▪ wherein the HD-NV diamond domain within diamond (HDNV) contains one or more paramagnetic centers and/or one or more pairs of coupled paramagnetic centers and/or one or more groups of paramagnetic centers and/or one or more pairs of coupled paramagnetic centers or comprises multiple clusters of paramagnetic centers and/or one or more clusters of pairs of paramagnetic centers and
• ▪ wherein paramagnetic centers of the one or more paramagnetic centers include NV centers (NV1, NV2) and
• ▪ wherein the HD-NV diamond region emits fluorescence radiation (FL) with a fluorescence wavelength (λ _fl ) when irradiated with pump radiation (LB) with a pump radiation wavelength (λ _pmp ), and
• ▪ where the intensity of the fluorescence radiation (FL) of the paramagnetic centers and/or the HD-NV diamond region when sweeping the magnetic flux density (B) of a magnetic field has a fluorescence characteristic in the form of an extremum of the intensity of the fluorescence radiation (FL) at a characteristic magnetic flux density B corresponding to this fluorescence feature and/or wherein the time delay of the modulation of the intensity of the fluorescence radiation (FL) of the paramagnetic centers or of the HD-NV diamond region compared to the modulation signal (S5) or the modulation of the intensity of the pump radiation (LB) when tuning the magnetic flux density (B) of a magnetic field exhibits a fluorescence characteristic in the form of an extremum of this retardation of the fluorescence radiation (FL) at a characteristic magnetic flux density B corresponding to a fluorescence characteristic when the diamond (HDNV) is oriented with respect to the magnetic flux density B such that the alignment ung of the paramagnetic centers coincides with the direction of the magnetic flux density B, and
• ▪ wherein the HD-NV diamond area is at least temporarily aligned by means of the goniometer during operation of the quantum measurement system and/or the quantum technological device such that this extreme of the intensity of the fluorescence radiation (FL) and/or this extreme of the time delay of the modulation of the intensity of the Fluorescence radiation (FL) is effective for the operation of the quantum measurement system and / or the operation of the quantum technological device.

• ▪ mit einem Einkristall (HDNV) und
• ▪ mit einer Magnetfelderzeugungsvorrichtung (MG) oder einer zur Magnetfelderzeugungsvorrichtung (MG) funktionsäquivalenten Vorrichtung (MGx, MGy, MGz) und
• ▪ mit einem Einkreisgoniometer oder mit einem Zweikreisgoniometer oder mit einem Dreikreisgoniometer, im Folgenden als Goniometer bezeichnet,
• ▪ wobei ein Einkreisgoniometer im Sinne dieses Anspruchs ein Instrument ist, das es ermöglicht, einen Gegenstand um eine Achse in eine Winkelposition bezogen auf einen Winkel relativ zu einem Bezugskörper zu drehen und
• ▪ wobei ein Zweikreisgoniometer im Sinne dieses Anspruchs ein Instrument ist, das es ermöglicht, einen Gegenstand um zwei Achsen in eine Winkelposition bezogen auf zwei Winkel relativ zu einem Bezugskörper zu drehen und
• ▪ wobei ein Dreikreisgoniometer im Sinne dieses Anspruchs ein Instrument ist, das es ermöglicht, einen Gegenstand um drei Achsen in eine Winkelposition bezogen auf drei Winkel relativ zu einem Bezugskörper zu drehen und
• ▪ wobei der Einkristall zumindest Paar aus zumindest einem ersten paramagnetischen Zentrum (NV1) und einem zweiten paramagnetischen Zentrum (NV2) umfasst und
• ▪ wobei das mindestens eine Paar aus paramagnetischen Zentren und/oder der Einkristall bei Bestrahlung mit Pumpstrahlung (LB) Fluoreszenzstrahlung (FL) emittieren und
• ▪ wobei die Intensität der Fluoreszenzstrahlung (FL) des mindestens einen Paares aus paramagnetischen Zentren und/oder des Einkristalls beim Durchstimmen der magnetischen Flussdichte (B) eines Magnetfelds am Orte des Paares paramagnetischer Zentren bzw. des Einkristalls ein Fluoreszenzmerkmal in Form eines Extremums der Intensität der Fluoreszenzstrahlung (FL) bei einer magnetischen Flussdichte B entsprechend diesem Fluoreszenzmerkmal zeigt und/oder wobei die zeitliche Verzögerung der Modulation der Intensität der Fluoreszenzstrahlung (FL) des Paares paramagnetischer Zentren bzw. des Einkristalls gegenüber der Modulation des Modulationssignals (S5) oder der Modulation der Intensität der Pumpstrahlung (LB) beim Durchstimmen der magnetischen Flussdichte (B) eines Magnetfelds am Orte des Paares paramagnetischer Zentren bzw. des Einkristalls ein Fluoreszenzmerkmal in Form eines Extremums dieser zeitlichen Verzögerung der Fluoreszenzstrahlung (FL) bei einer magnetischen Flussdichte B entsprechend einem Fluoreszenzmerkmal zeigt und
• ▪ wobei dieses Fluoreszenzstrahlungsmerkmal auf eine Dipol-Dipol-Kopplung der beiden paramagnetischen Zentren infolge eines ausreichend kleinen Abstands der beiden paramagnetischen Zentren des Paars paramagnetischer Zentren zurückzuführen ist und
• ▪ wobei der Einkristall mittels des Goniometers im Betrieb des Quantenmesssystems und/oder der quantentechnologischen Vorrichtung zumindest zeitweise so ausgerichtet ist, dass dieses Extremum der Intensität der Fluoreszenzstrahlung (FL) für den Betrieb des Quantenmesssystems und/oder den Betrieb der quantentechnologischen Vorrichtung wirksam ist.

Feature 169: Quantum measurement system and/or quantum technological device

• ▪ with a single crystal (HDNV) and
• ▪ with a magnetic field generating device (MG) or a device (MGx, MGy, MGz) functionally equivalent to the magnetic field generating device (MG) and
• ▪ with a single-circle goniometer or with a double-circle goniometer or with a triple-circle goniometer, hereinafter referred to as goniometer,
• ▪ wherein a single-circle goniometer within the meaning of this claim is an instrument that makes it possible to rotate an object about an axis to an angular position related to an angle relative to a reference body and
• ▪ wherein a dual-circle goniometer within the meaning of this claim is an instrument that makes it possible to rotate an object about two axes into an angular position based on two angles relative to a reference body and
• ▪ wherein a three-circle goniometer within the meaning of this claim is an instrument that makes it possible to rotate an object about three axes into an angular position related to three angles relative to a reference body and
• ▪ wherein the single crystal comprises at least a pair of at least one first paramagnetic center (NV1) and one second paramagnetic center (NV2) and
• ▪ wherein the at least one pair of paramagnetic centers and/or the single crystal emit fluorescence radiation (FL) when irradiated with pump radiation (LB) and
• ▪ wherein the intensity of the fluorescence radiation (FL) of the at least one pair of paramagnetic centers and/or the single crystal when tuning the magnetic flux density (B) of a magnetic field at the location of the pair of paramagnetic centers or the single crystal is a fluorescence feature in the form of an extreme of the intensity of the Fluorescence radiation (FL) at a magnetic flux density B corresponding to this fluorescence characteristic shows and / or wherein the time delay of the modulation of the intensity of the fluorescence radiation (FL) of the pair of paramagnetic centers or of the single crystal compared to the modulation of the modulation signal (S5) or the modulation of the intensity of the pump radiation (LB) when tuning the magnetic flux density (B) of a magnetic field at the location of the pair of paramagnetic centers or the single crystal, a fluorescence feature in the form of an extremum of this time delay of the fluorescence radiation (FL) at a magnetic flux density B corresp showing a fluorescent feature and
• ▪ where this fluorescence emission characteristic is due to a dipole-dipole coupling of the two paramagnetic centers due to a sufficiently small distance of the two paramagnetic centers of the pair of paramagnetic centers and
• ▪ wherein the single crystal is at least temporarily aligned by means of the goniometer during operation of the quantum measurement system and/or the quantum technological device such that this extremum of the Intensity of the fluorescence radiation (FL) is effective for the operation of the quantum measurement system and / or the operation of the quantum technological device.

• ▪ wobei der Einkristall (HDNV) gegenüber der magnetischen Flussdichte B so ausgerichtet ist, dass die Ausrichtung der paramagnetischen Zentren mit der Richtung der magnetischen Flussdichte B übereinstimmt.

Feature 170: Quantum measurement system and/or quantum technological device according to feature 169,

• ▪ where the single crystal (HDNV) is aligned with respect to the magnetic flux density B in such a way that the alignment of the paramagnetic centers coincides with the direction of the magnetic flux density B.

• ▪ wobei der Einkristall ein Diamant ist
• ▪ wobei paramagnetische Zentren der ein oder mehreren paramagnetischen Zentren ein oder mehrere NV-Zentren und/oder ein oder mehrere ST1-Zentren und/oder ein oder mehrere TR12-Zentren und/oder ein oder mehrere SIV-Zentren und/oder ein oder mehrere GeV-Zentren umfassen und/oder wobei der Diamant (HDNV) ein HD-NV-Diamant ist oder wobei der Diamant (HDNV) einen HD-NV-Diamantbereich umfasst, der die Merkmale eines HD-NV-Diamanten aufweist.

Feature 171: Quantum measurement system and/or quantum technological device according to feature 169 or 170, hereinafter referred to as device,

• ▪ where the single crystal is a diamond
• ▪ wherein paramagnetic centers of the one or more paramagnetic centers are one or more NV centers and/or one or more ST1 centers and/or one or more TR12 centers and/or one or more SIV centers and/or one or more GeV centers and/or wherein the diamond (HDNV) is a HD-NV diamond or wherein the diamond (HDNV) comprises a HD-NV diamond region exhibiting the characteristics of a HD-NV diamond.

• ▪ wobei die Vorrichtung eine Magnetfelderzeugungsvorrichtung (MG, MGz, MGy, MGx) umfasst, die am Ort der paramagnetischen Zentren (NV1, NV2) bzw. am Ort der des Paars paramagnetischer Zentren bzw. am Ort der NV-Zentren bzw. am Ort des NV-Zentren-Paares bzw. am Ort der SiV-Zentren bzw. am Ort des SiV-Zentren-Paares bzw. am Ort der GeV-Zentren bzw. am Ort des GeV-Zentren-Paares bzw. am Ort der ST1-Zentren bzw. am Ort des ST1-Zentren-Paares bzw. am Ort der TR12-Zentren bzw. am Ort des TR12-Zentren-Paares bzw. am Ort des Einkristalls bzw. am Ort des Diamanten bzw. am Ort des HD-NV-Diamanten eine magnetische Offset-Flussdichte B₀ erzeugt, und
• ▪ wobei die magnetische Offset-Flussdichte B₀ sich mit einer externen magnetischen Flussdichte B_ext zu einer magnetischen Gesamtflussdicht B_g am Ort der paramagnetischen Zentren (NV1, NV2) bzw. am Ort der paramagnetischen Zentren (NV1, NV2) bzw. am Ort der des Paars paramagnetischer Zentren bzw. am Ort der NV-Zentren bzw. am Ort des NV-Zentren-Paares bzw. am Ort der SiV-Zentren bzw. am Ort des SiV-Zentren-Paares bzw. am Ort der GeV-Zentren bzw. am Ort des GeV-Zentren-Paares bzw. am Ort der ST1-Zentren bzw. am Ort des ST1-Zentren-Paares bzw. am Ort der TR12-Zentren bzw. am Ort des TR12-Zentren-Paares bzw. am Ort des Einkristalls bzw. am Ort des Diamanten bzw. am Ort des HD-NV-Diamanten summierend überlagert und
• ▪ wobei die paramagnetischen Zentren (NV1, NV2) bzw. das Paar paramagnetischer Zentren bzw. die NV-Zentren bzw. das NV-Zentren-Paar bzw. die SiV-Zentren bzw. das SiV-Zentren-Paar bzw. die GeV-Zentren bzw. das GeV-Zentren-Paar bzw. die ST1-Zentren bzw. das ST1-Zentren-Paar bzw. die TR12-Zentren bzw. das TR12-Zentren-Paar bzw. der Einkristall bzw. der Diamant bzw. der HD-NV-Diamant bei Bestrahlung mit Pumpstrahlung (LB) einer Pumpstrahlungswellenlänge (λ_pmp) Fluoreszenzstrahlung (FL) einer Fluoreszenzstrahlungswellenlänge (λ_fl) abgeben und ▪ wobei die Vorrichtung Mittel umfasst, um diese Fluoreszenzstrahlung (FL) zu erfassen und in einen Fluoreszenzintensitätsmesswert und/oder einen Fluoreszenzverzögerungsmesswert zu wandeln, die von einem Parameter der Fluoreszenzstrahlung (FL) abhängen, und
• ▪ wobei die Vorrichtung Mittel umfasst, um den Fluoreszenzintensitätsmesswert bzw. den Fluoreszenzverzögerungsmesswert bereitzuhalten und/oder zumindest zeitweise auszugeben.

Feature 172: Quantum measurement system and/or quantum technological device according to one or more of features 166 to 171, hereinafter referred to as device,

• ▪ wherein the device comprises a magnetic field generating device (MG, MGz, MGy, MGx) located at the location of the paramagnetic centers (NV1, NV2) or at the location of the pair of paramagnetic centers or at the location of the NV centers or at the location of the NV center pair or at the location of the SiV centers or at the location of the SiV center pair or at the location of the GeV centers or at the location of the GeV center pair or at the location of the ST1 centers or at the location of the ST1 center pair or at the location of the TR12 centers or at the location of the TR12 center pair or at the location of the single crystal or at the location of the diamond or at the location of the HD-NV diamond magnetic offset flux density B ₀ generated, and
• ▪ where the magnetic offset flux density B ₀ combines with an external magnetic flux density B _ext to form a total magnetic flux density B _g at the location of the paramagnetic centers (NV1, NV2) or at the location of the paramagnetic centers (NV1, NV2) or at the location of the of the pair of paramagnetic centers or at the location of the NV centers or at the location of the pair of NV centers or at the location of the SiV centers or at the location of the SiV center pair or at the location of the GeV centers or at the location of the GeV center pair or at the location of the ST1 center or at the location of the ST1 center pair or at the location of the TR12 center or at the location of the TR12 center pair or at the location of the single crystal or at the location of the diamond or at the location of the HD-NV diamond superimposed summing and
• ▪ where the paramagnetic centers (NV1, NV2) or the pair of paramagnetic centers or the NV centers or the NV center pair or the SiV centers or the SiV center pair or the GeV centers or the GeV center pair or the ST1 centers or the ST1 center pair or the TR12 centers or the TR12 center pair or the single crystal or the diamond or the HD-NV - Diamond emit fluorescence radiation (FL) of a fluorescence radiation wavelength (λ _fl ) when irradiated with pump radiation (LB) of a pump radiation wavelength (λ _pmp ) and ▪ the device comprises means to detect this fluorescence radiation (FL) and convert it into a fluorescence intensity measurement value and/or a convert fluorescence delay measurements dependent on a fluorescence radiation (FL) parameter, and
• ▪ wherein the device comprises means to keep the fluorescence intensity measurement value or the fluorescence delay measurement value available and/or to output it at least temporarily.

• ▪ wobei die Vorrichtung einem externen Magnetfeld mit einer externen magnetischen Flussdichte B_ext ausgesetzt ist und
• ▪ wobei die Fluoreszenzstrahlung (FL) von der externen magnetischen Flussdichte B_ext abhängt und
• ▪ wobei die Vorrichtung Mittel umfasst, um diese Fluoreszenzstrahlung (FL) zu erfassen und in einen Fluoreszenzintensitätsmesswert und/oder einen Fluoreszenzverzögerungsmesswert für einen Parameter der externen magnetischen Flussdichte B_ext, insbesondere den Betrag der externen magnetischen Flussdichte B_ext, zu wandeln und
• ▪ wobei die Vorrichtung Mittel umfasst, um den Fluoreszenzintensitätsmesswert und/oder den Fluoreszenzverzögerungsmesswert bereitzuhalten und/oder zumindest zeitweise auszugeben.

Feature 173: Device according to feature 172, hereinafter referred to as device,

• ▪ wherein the device is exposed to an external magnetic field with an external magnetic flux density B _ext and
• ▪ where the fluorescence radiation (FL) depends on the external magnetic flux density B _ext and
• ▪ wherein the device comprises means for detecting this fluorescence radiation (FL) and converting it into a fluorescence intensity measurement value and/or a fluorescence delay measurement value for a parameter of the external magnetic flux density B _ext , in particular the magnitude of the external magnetic flux density B _ext , and
• ▪ wherein the device comprises means for holding and/or at least temporarily outputting the fluorescence intensity measurement value and/or the fluorescence delay measurement value.

• ▪ wobei die Vorrichtung einem externen physikalischen Parameter ausgesetzt ist und
• ▪ wobei die Fluoreszenzstrahlung (FL) von dem externen physikalischen Parameter abhängt und
• ▪ wobei die Vorrichtung Mittel umfasst, um diese Fluoreszenzstrahlung (FL) zu erfassen und in einen Fluoreszenzintensitätsmesswert und/oder einen Fluoreszenzverzögerungsmesswert für einen diesen externen physikalischen Parameter zu wandeln, und
• ▪ wobei die Vorrichtung Mittel umfasst, um den Fluoreszenzintensitätsmesswert und/oder den Fluoreszenzverzögerungsmesswert bereitzuhalten und/oder zumindest zeitweise auszugeben.

Feature 174: device according to feature 172 or 173, hereinafter referred to as device,

• ▪ wherein the device is exposed to an external physical parameter and
• ▪ where the fluorescence radiation (FL) depends on the external physical parameter and
• ▪ wherein the device comprises means for detecting said fluorescence radiation (FL) and converting it into a fluorescence intensity measurement and/or a fluorescence delay measurement for said external physical parameter, and
• ▪ wherein the device comprises means for holding and/or at least temporarily outputting the fluorescence intensity measurement value and/or the fluorescence delay measurement value.

• ▪ wobei die Vorrichtung über Mittel verfügt, den Spin der Elektronenkonfiguration eines oder mehrerer paramagnetischer Zentren bzw. eines oder mehrerer NV-Zentren bzw. eines oder mehrerer ST1-Zentren bzw. eines oder mehrerer TR12-Zentren bzw. eines oder mehrerer SiV-Zentren bzw. eines oder mehrerer GeV-Zentren bzw. eines oder mehrerer NV-Zentren-Paares bzw. eines oder mehrerer ST1-Zentren-Paares bzw. eines oder mehrerer TR12-Zentren-Paares bzw. eines oder mehrerer SiV-Zentren-Paares bzw. eines oder mehrerer GeV-Zentren-Paares bzw. eines oder mehrerer paramagnetische Zentren bzw. eines oder mehrerer Paare paramagnetische Zentren zu modifizieren.

Feature 175: Quantum measurement system and/or quantum technological device according to one or more of features 166 to 174, hereinafter referred to as device,

• ▪ wherein the device has means, the spin of the electron configuration of one or more paramagnetic centers or one or more NV centers or one or more ST1 centers or one or more TR12 centers or one or more SiV centers or one or more GeV centers or one or more pairs of NV centers or one or more pairs of ST1 centers or one or more pairs of TR12 centers or one or more pairs of SiV centers or one or more pairs of GeV centers or one or more paramagnetic centers or one or more pairs of paramagnetic centers.

Features XX (manufacturing process with alignment device and with Cpk> 1.66)

• ▪ wobei die Anzahl n der quantentechnologischen Vorrichtungen größer als 10 und/oder größer als 20 und/oder größer als 50 und/oder größer als 100 und/oder größer als 200 und/oder größer als 500 und/oder größer als 1000 und/oder größer als 2000 und/oder größer als 5000 ist und
• ▪ wobei die Anzahl n eine ganze positive Zahl ist und
• ▪ wobei die Anzahl m eine ganze positive Zahl größer oder gleich n ist und
• ▪ wobei die n quantentechnologischen Vorrichtungen gleich ausgeführt sind, aber nicht identisch sein müssen, und
• ▪ wobei jede der quantentechnologischen Vorrichtungen jeweils ein Gehäuse (GH) aufweist und
• ▪ wobei jede der quantentechnologischen Vorrichtungen einen jeweiligen Kristall (HDNV) aufweist und
• ▪ wobei jedes Gehäuse (GH) einer jeweiligen quantentechnologischen Vorrichtung eine jeweilige Montagefläche (VF, AF) aufweist und
• ▪ wobei die jeweilige Montagefläche (VF, AF) der jeweiligen quantentechnologischen Vorrichtung
  • ◯ durch eine jeweilige Verbindungsfläche (VF) zwischen dem jeweiligen Kristall (Substrat) der jeweiligen quantentechnologischen Vorrichtung und dem jeweiligen Gehäuse (GH) der jeweiligen quantentechnologischen Vorrichtung oder
  • ◯ durch eine Anschlussfläche (AF) der jeweiligen Befestigungspunkte und/oder Befestigungsflächen des jeweiligen Gehäuses (GH) der jeweiligen quantentechnologischen Vorrichtung, die insbesondere auch jeweilige elektrische Anschlüsse (AN) des jeweiligen Gehäuses (GH) der jeweiligen quantentechnologischen Vorrichtung sein können, definiert ist und
• ▪ wobei die jeweilige Montagefläche (VF, AF) der jeweiligen quantentechnologischen Vorrichtung eine jeweilige Flächennormale (FNDI, FNAN) aufweist, die jeweils definitionsgemäß senkrecht zur jeweiligen Montagefläche (VF, AF) Montagefläche ist, und
• ▪ wobei der jeweilige Kristall (HDNV) der jeweiligen quantentechnologischen Vorrichtung eine jeweilige Kristallrichtung des jeweiligen Kristalls (HDNV) der jeweiligen quantentechnologischen Vorrichtung aufweist und
• ▪ wobei diese jeweilige Kristallrichtung des Kristalls um einen jeweiligen Kippwinkel gegenüber der jeweiligen Flächennormale (FNDI, FNAN) der jeweiligen quantentechnologischen Vorrichtung verkippt ist, wobei der Kippwinkel 0° sein kann, und
• ▪ wobei die jeweiligen Kristallrichtungen der jeweiligen Kristalle (HDNV) der n gleichen, quantentechnologischen Vorrichtungen bezogen auf den jeweiligen Kristall (HDNV) die gleiche kristallografische Indizierung aufweisen, also kristallografisch gleich sind (z.B. [111]),
• ▪ wobei sich die jeweiligen Kippwinkel dieser Kristallrichtungen der verschiedenen n gleichen, quantentechnologischer Vorrichtungen gegenüber der jeweiligen Flächennormale (FNDI, FNAN) von Vorrichtung zu Vorrichtung sich zumindest zweitweise, insbesondere im Betrieb, untereinander um nicht mehr als +/-10° und/oder nicht mehr als +/-5° und/oder nicht mehr als +/-2° und/oder nicht mehr als +/-1° und/oder nicht mehr als +/-0,5° und/oder nicht mehr als +/-0,2° und/oder nicht mehr als +/-0,1 und/oder nicht mehr als +/-0,05° und/oder nicht mehr als +/-0,02° und/oder nicht mehr als +/-0,01 und/oder nicht mehr als +/-0,005° und/oder nicht mehr als +/-0,002° und/oder nicht mehr als +/-0,001 bezogen auf das jeweilige Gehäuse (GH) und den jeweiligen Kristall (HDNV) der jeweiligen Vorrichtung unterscheiden und
• ▪ dass der C_pk-Wert der Kippwinkel der n quantentechnologischen Vorrichtungen zu diesen Zeiten bezogen auf ein Kippwinkelintervall von +/-10° und/oder +/-5° und/oder +/-2° und/oder +/-1° und/oder +/-0,5° und/oder +/-0,2° und/oder +/-0,1 und/oder +/-0,05° und/oder +/-0,02° und/oder +/-0,01 und/oder +/-0,005° und/oder +/-0,002° und/oder +/-0,001 bezogen auf die jeweiligen Flächennormalen (FNDI, FNAN) der jeweiligen Montageflächen (VF, AF) der jeweiligen Gehäuse (GH) der n gleichen, quantentechnologischer Vorrichtungen besser als 1,66 ist.

Feature 176: set of n identical quantum technological devices from a series production of m quantum technological devices,

• ▪ where the number n of quantum technological devices is greater than 10 and/or greater than 20 and/or greater than 50 and/or greater than 100 and/or greater than 200 and/or greater than 500 and/or greater than 1000 and/or is greater than 2000 and/or greater than 5000 and
• ▪ where the number n is a positive integer and
• ▪ where the number m is a positive integer greater than or equal to n and
• ▪ where the n quantum technological devices have the same design, but do not have to be identical, and
• ▪ wherein each of the quantum technological devices has a housing (GH) and
• ▪ wherein each of the quantum technological devices has a respective crystal (HDNV), and
• ▪ wherein each housing (GH) of a respective quantum technological device has a respective mounting surface (VF, AF) and
• ▪ where the respective mounting surface (VF, AF) of the respective quantum technological device
  • ◯ by a respective connecting surface (VF) between the respective crystal (substrate) of the respective quantum technological device and the respective housing (GH) of the respective quantum technological device or
  • ◯ is defined by a connection surface (AF) of the respective fastening points and/or fastening surfaces of the respective housing (GH) of the respective quantum technological device, which in particular can also be respective electrical connections (AN) of the respective housing (GH) of the respective quantum technological device, and
• ▪ wherein the respective mounting surface (VF, AF) of the respective quantum technological device has a respective surface normal (FNDI, FNAN), which by definition is perpendicular to the respective mounting surface (VF, AF) mounting surface, and
• ▪ wherein the respective crystal (HDNV) of the respective quantum technological device has a respective crystal direction of the respective crystal (HDNV) of the respective quantum technological device and
• ▪ wherein this respective crystal direction of the crystal is tilted by a respective tilt angle with respect to the respective surface normal (FNDI, FNAN) of the respective quantum technological device, whereby the tilt angle can be 0°, and
• ▪ where the respective crystal directions of the respective crystals (HDNV) of the n same quantum technological devices related to the respective crystal (HDNV) have the same crystallographic indexing, i.e. are crystallographically the same (e.g. [111]),
• ▪ wherein the respective tilt angles of these crystal directions of the different n same quantum technological devices compared to the respective surface normal (FNDI, FNAN) from device to device differ at least in part, especially during operation, by no more than +/-10° and/or not more than +/-5° and/or not more than +/-2° and/or not more than +/-1° and/or not more than +/-0.5° and/or not more than +/- -0.2° and/or no more than +/-0.1 and/or no more than +/-0.05° and/or no more than +/-0.02° and/or no more than + /-0.01 and/or no more than +/-0.005° and/or no more than +/-0.002° and/or no more than +/-0.001 related to the respective case (GH) and the respective crystal ( HDNV) of each device distinguish and
• ▪ that the C _pk value of the flip angles of the n quantum technological devices at these times related to a flip angle interval of +/-10° and/or +/-5° and/or +/-2° and/or +/-1° and/or +/-0.5° and/or +/-0.2° and/or +/-0.1° and/or +/-0.05° and/or +/-0.02° and /or +/-0.01 and/or +/-0.005° and/or +/-0.002° and/or +/-0.001 related to the respective surface normals (FNDI, FNAN) of the respective mounting surfaces (VF, AF) of respective housing (GH) of the n same quantum technological devices is better than 1.66.

• ▪ wobei jede der n gleichen, quantentechnologischen Vorrichtungen eine Ausrichtvorrichtung (MEMSG) für den Kristall (HDNV) umfasst.

Feature 177: quantity of n identical quantum technological devices of a series production of m quantum technological devices according to feature 176,

• ▪ wherein each of the n same quantum technological devices comprises an alignment device (MEMSG) for the crystal (HDNV).

• ▪ wobei jede der von n gleichen, quantentechnologischen Vorrichtungen einen Kristall (HDNV) umfasst, der mittels einer Ausrichtvorrichtung (MEMSG) für den Kristall (HDNV) zumindest zeitweise ausgerichtet wird oder ausgerichtet worden ist.

Feature 178: Quantity of n identical quantum technological devices of a series production of m quantum technological devices according to feature 176 or 177

• ▪ wherein each of the n identical quantum technological devices comprises a crystal (HDNV) which is or has been aligned at least temporarily by means of an alignment device (MEMSG) for the crystal (HDNV).

• ▪ wobei der Kristall (HDNV) Diamant umfasst und
• ▪ wobei der Diamant (HDNV) ein oder mehrere paramagnetische Zentren und/oder ein oder mehrere Paare gekoppelter paramagnetischer Zentren und/oder ein oder mehrere Gruppen paramagnetischer Zentren und/oder ein oder mehrere Paare gekoppelter paramagnetischer Zentren ein oder mehrere Cluster paramagnetischer Zentren und/oder ein oder mehrere Cluster von Paaren paramagnetischer Zentren umfasst und
• ▪ wobei paramagnetische Zentren der ein oder mehreren paramagnetischen Zentren ein oder mehrere NV-Zentren und/oder ein oder mehrere ST1-Zentren und/oder ein oder mehrere TR12-Zentren und/oder ein oder mehrere SIV-Zentren und/oder ein oder mehrere GeV-Zentren umfassen und/oder wobei der Diamant (HDNV) ein HD-NV-Diamant ist oder wobei der Diamant (HDNV) einen HD-NV-Diamantbereich umfasst, der die Merkmale eines HD-NV-Diamanten aufweist und
• ▪ wobei insbesondere die paramagnetischen Zentren an nukleare Spins von Atomen in der Umgebung paramagnetischer Zentren dieser paramagnetischen Zentren koppelbar sein können.

Feature 179: quantity of n identical quantum technological devices from a series production of m quantum technological devices according to one or more of features 176 to 178,

• ▪ wherein the crystal (HDNV) comprises diamond and
• ▪ wherein the diamond (HDNV) has one or more paramagnetic centers and/or one or more pairs of coupled paramagnetic centers and/or one or more groups of paramagnetic centers and/or one or more pairs of coupled paramagnetic centers one or more clusters of paramagnetic centers and/or comprises one or more clusters of pairs of paramagnetic centers and
• ▪ wherein paramagnetic centers of the one or more paramagnetic centers are one or more NV centers and/or one or more ST1 centers and/or one or more TR12 centers and/or one or more SIV centers and/or one or more GeV centers and/or wherein the diamond (HDNV) is a HDNV diamond or wherein the diamond (HDNV) comprises a HDNV diamond region having the characteristics of a HDNV diamond and
• ▪ where in particular the paramagnetic centers can be coupled to nuclear spins of atoms in the vicinity of paramagnetic centers of these paramagnetic centers.

• ▪ wobei die n gleichen, quantentechnologischen Vorrichtungen einer Serienproduktion dazu eingerichtet und vorgesehen sind ein Verfahren nach einem oder mehreren der vorangehenden oder nachfolgenden Verfahrensansprüche auszuführen und/oder
• ▪ wobei die n gleichen, quantentechnologischen Vorrichtungen einer Serienproduktion die Merkmale der eines oder mehrerer vorangehender oder nachfolgender Vorrichtungsansprüche erfüllen.

Feature 180: quantity of n identical quantum technological devices of a series production of m quantum technological devices according to one or more of features 176 to 179

• ▪ wherein the n identical quantum technological devices of a series production are set up and provided to carry out a method according to one or more of the preceding or following method claims and/or
• ▪ wherein the n identical quantum technological devices of a series production meet the features of one or more preceding or subsequent device claims.

Features XXI

(Manufacturing process with magnet alignment and with Cpk>1.66)

• ▪ wobei die Anzahl n der quantentechnologischen Vorrichtungen größer als 10 und/oder größer als 20 und/oder größer als 50 und/oder größer als 100 und/oder größer als 200 und/oder größer als 500 und/oder größer als 1000 und/oder größer als 2000 und/oder größer als 5000 ist und
• ▪ wobei m eine ganze positive Zahl größer oder gleich n ist und
• ▪ wobei jede der quantentechnologischen Vorrichtungen jeweils eine magnetfelderzeugende Vorrichtung (MG, MGx, MGx, MGz) aufweist und
• ▪ wobei jede der jeweiligen magnetfelderzeugenden Vorrichtungen (MG, MGx, MGx, MGz) der jeweiligen quantentechnologischen Vorrichtungen jeweils ein jeweiliges Magnetfeld mit einer Flussdichte B und einer jeweiligen Magnetfeldrichtung erzeugen kann und
• ▪ wobei jede der jeweiligen quantentechnologischen Vorrichtungen einen jeweiligen Kristall (HDNV) aufweist und
• ▪ wobei jeder jeweilige Kristall (HDNV) ein oder mehrere paramagnetischer Zentren und/oder ein oder mehrere Paare gekoppelter paramagnetischer Zentren und/oder ein oder mehrere Cluster paramagnetischer Zentren und/oder ein oder mehrere Cluster aus Paaren gekoppelter paramagnetischer Zentren umfasst und
• ▪ wobei paramagnetischen Zentren der paramagnetischen Zentren ein oder mehrere NV-Zentren und/oder ein oder mehrere ST1-Zentren und/oder ein oder mehrere TR12-Zentren und/oder ein oder mehrere SIV-Zentren und/oder ein oder mehrere GeV-Zentren umfassen können und/oder wobei der Kristall ein Diamant (HDNV) sein kann und/oder wobei der Kristall (HDNV) ein HD-NV-Diamant sein kann oder wobei der Kristall (HDNV) einen HD-NV-Diamantbereich umfassen kann, der die Merkmale eines HD-NV-Diamanten aufweist, und
• ▪ wobei insbesondere die paramagnetischen Zentren an nukleare Spins von Atomen in der Umgebung paramagnetischer Zentren dieser paramagnetischen Zentren koppelbar sein können und
• ▪ wobei ein oder mehrere paramagnetische Zentren der paramagnetischen Zentren jedes jeweilige Kristall (HDNV) der jeweiligen quantentechnologischen Vorrichtungen eine jeweilige Vorzugsrichtung, im Folgenden auch als Kristallrichtung des jeweiligen Kristalls (DHNV) bezeichnet, aufweisen und
• ▪ wobei diese jeweilige Kristallrichtung des jeweiligen Kristalls (HDNV) der jeweiligen quantentechnologischen Vorrichtung bei Erzeugung eines magnetischen Feldes durch die jeweilige magnetfelderzeugende Vorrichtung (MG, MGx, MGx, MGz) dieser jeweiligen quantentechnologischen Vorrichtung um einen jeweiligen Kippwinkel gegenüber der jeweiligen Magnetfeldrichtung der magnetischen Flussdichte B des Magnetfelds verkippt ist, wobei der Kippwinkel 0° sein kann, und
• ▪ wobei sich die jeweiligen Kippwinkel der jeweiligen Vorrichtung der n quantentechnologischer Vorrichtungen sich zumindest zweitweise, insbesondere im Betrieb, untereinander um nicht mehr als +/-10° und/oder um nicht mehr als +/-5° und/oder um nicht mehr als +/-2° und/oder um nicht mehr als +/-1° und/oder um nicht mehr als +/-0,5° und/oder um nicht mehr als +/-0,2° und/oder um nicht mehr als +/-0,1 und/oder um nicht mehr als +/-0,05° und/oder um nicht mehr als +/-0,02° und/oder um nicht mehr als +/-0,01 und/oder um nicht mehr als +/-0,005° und/oder um nicht mehr als +/-0,002° und/oder um nicht mehr als +/-0,001° bezogen auf die jeweilige Magnetfeldrichtung der magnetischen Flussdichte B des Magnetfelds der jeweiligen Vorrichtung, das die magnetfelderzeugende Vorrichtung (MG, MGx, MGx, MGz) erzeugt, unterscheiden und
• ▪ dass der C_pk-Wert der Kippwinkel dieser n Vorrichtungen zu diesen Zeiten bezogen auf das Kippwinkelintervall von +/-10° und/oder +/-5° und/oder +/-2° und/oder +/-1° und/oder +/-0,5° und/oder +/-0,2° und/oder +/-0,1 und/oder +/-0,05° und/oder +/-0,02° und/oder +/-0,01 und/oder +/-0,005° und/oder +/-0,002° und/oder +/-0,001 jeweils bezogen auf die jeweiligen Magnetfeldrichtungen der magnetischen Flussdichte B des Magnetfelds der jeweiligen Vorrichtung, das die magnetfelderzeugende Vorrichtung (MG, MGx, MGx, MGz) erzeugt, der n gleichen, quantentechnologischen Vorrichtungen besser als 1,66 ist.

Feature 181: Quantity of n identical quantum technological devices of a series production of m quantum technological devices

• ▪ where the number n of quantum technological devices is greater than 10 and/or greater than 20 and/or greater than 50 and/or greater than 100 and/or greater than 200 and/or greater than 500 and/or greater than 1000 and/or is greater than 2000 and/or greater than 5000 and
• ▪ where m is a positive integer greater than or equal to n and
• ▪ wherein each of the quantum technological devices has a magnetic field generating device (MG, MGx, MGx, MGz) and
• ▪ wherein each of the respective magnetic field generating devices (MG, MGx, MGx, MGz) of the respective quantum technological devices can generate a respective magnetic field with a flux density B and a respective magnetic field direction and
• ▪ wherein each of the respective quantum technological devices has a respective crystal (HDNV), and
• ▪ wherein each respective crystal (HDNV) comprises one or more paramagnetic centers and/or one or more pairs of coupled paramagnetic centers and/or one or more clusters of paramagnetic centers and/or one or more clusters of pairs of coupled paramagnetic centers and
• ▪ wherein paramagnetic centers of the paramagnetic centers comprise one or more NV centers and/or one or more ST1 centers and/or one or more TR12 centers and/or one or more SIV centers and/or one or more GeV centers and/or wherein the crystal may be diamond (HDNV) and/or wherein the crystal (HDNV) may be HD-NV diamond or wherein the crystal (HDNV) may comprise an HD-NV diamond region having the features a HD-NV diamond, and
• ▪ whereby in particular the paramagnetic centers can be coupled to nuclear spins of atoms in the vicinity of paramagnetic centers of these paramagnetic centers and
• ▪ wherein one or more paramagnetic centers of the paramagnetic centers of each respective crystal (HDNV) of the respective quantum technological devices have a respective preferred direction, hereinafter also referred to as the crystal direction of the respective crystal (DHNV), and
• ▪ with this respective crystal direction of the respective crystal (HDNV) of the respective quantum technological device upon generation of a magnetic field by the respective magnetic field generating device (MG, MGx, MGx, MGz) of this respective quantum technological device by a respective tilt angle in relation to the respective magnetic field direction of the magnetic flux density B of the magnetic field is tilted, wherein the tilt angle can be 0°, and
• ▪ wherein the respective tilt angles of the respective device of the n quantum technological devices differ at least in part, in particular during operation, by no more than +/-10° and/or by no more than +/-5° and/or by no more than +/-2° and/or by no more than +/-1° and/or by no more than +/-0.5° and/or by no more than +/-0.2° and/or by no more more than +/-0.1 and/or by no more than +/-0.05° and/or by no more than +/-0.02° and/or by no more than +/-0.01 and /or by no more than +/-0.005° and/or by no more than +/-0.002° and/or by no more than +/-0.001° in relation to the respective magnetic field direction of the magnetic flux density B of the magnetic field of the respective device, that generates the magnetic field generating device (MG, MGx, MGx, MGz) and
• ▪ that the C _pk value of the tilt angles of these n devices at these times related to the tilt angle interval of +/-10° and/or +/-5° and/or +/-2° and/or +/-1° and /or +/-0.5° and/or +/-0.2° and/or +/-0.1 and/or +/-0.05° and/or +/-0.02° and/or or +/-0.01 and/or +/-0.005° and/or +/-0.002° and/or +/-0.001 in each case based on the respective magnetic field directions of the magnetic flux density B of the magnetic field of the respective device, the device generating the magnetic field (MG, MGx, MGx, MGz) that is better than 1.66 for n equal quantum technological devices.

Features XXII

(manufacturing process with goniometer)

• ▪ mit den Schritten
• ▪ Bereitstellen eines Open-Cavity-Gehäuses (GH) mit einer Montageöffnung (OF);
• ▪ Bereitstellen eines Einkreisgoniometers oder eines Zweikreisgoniometers oder eines Dreikreisgoniometers, im Folgenden als Goniometer (MEMSG) bezeichnet, als Ausrichtungsvorrichtung (DMT, RT, HLT);
• ▪ Bereitstellen eines Kristalls (HDNV),
• ▪ wobei das Goniometer (MEMSG) im Fall eines Einkreisgoniometers eine erste Achsenverstellvorrichtung für eine erste Goniometer-Achse aufweist und
• ▪ wobei das Goniometer (MEMSG) im Fall eines Zweikreisgoniometers eine erste Achsenverstellvorrichtung für eine erste Goniometer-Achse aufweist und eine zweite Achsenverstellvorrichtung für eine zweite Goniometer-Achse aufweist und
• ▪ wobei das Goniometer (MEMSG) im Fall eines Dreikreisgoniometers eine erste Achsenverstellvorrichtung für eine erste Goniometer-Achse aufweist und eine zweite Achsenverstellvorrichtung für eine zweite Goniometer-Achse aufweist und eine dritte Achsenverstellvorrichtung für eine dritte Goniometer-Achse aufweist und
• ▪ wobei jeder jeweilige Kristall (HDNV) ein oder mehrere paramagnetischer Zentren und/oder ein oder mehrere Paare gekoppelter paramagnetischer Zentren und/oder ein oder mehrere Cluster paramagnetischer Zentren und/oder ein oder mehrere Cluster aus Paaren gekoppelter paramagnetischer Zentren umfasst und
• ▪ wobei paramagnetischen Zentren der paramagnetischen Zentren ein oder mehrere NV-Zentren und/oder ein oder mehrere ST1-Zentren und/oder ein oder mehrere TR12-Zentren und/oder ein oder mehrere SIV-Zentren und/oder ein oder mehrere GeV-Zentren umfassen können und/oder wobei der Kristall ein Diamant (HDNV) sein kann und/oder wobei der Kristall (HDNV) ein HD-NV-Diamant sein kann und/oder wobei der Kristall (HDNV) einen HD-NV-Diamantbereich umfassen kann, der die Merkmale eines HD-NV-Diamanten aufweist, und
• ▪ wobei insbesondere die paramagnetischen Zentren an nukleare Spins von Atomen in der Umgebung paramagnetischer Zentren dieser paramagnetischen Zentren koppelbar sein können und
• ▪ wobei die paramagnetischen Zentren und/oder der Kristall (HDNV) eine Fluoreszenzstrahlung (FL) mit einer Fluoreszenzwellenlänge (λ_fl) bei Bestrahlung mit Pumpstrahlung (LB) mit einer Pumpstrahlungswellenlänge (λ_pmp) abgeben und
• ▪ wobei die Fluoreszenzstrahlung (FL) von einer magnetischen Flussdichte B am Ort der paramagnetischen Zentren bzw. des Kristalls (HDNV) mit diesen paramagnetischen Zentren abhängt und
• ▪ wobei der Fluoreszenzintensitätsmesswert der Intensität der Fluoreszenzstrahlung (FL) einen Intensitätsabfall des Fluoreszenzintensitätsmesswerts der Intensität der Fluoreszenzstrahlung (FL) innerhalb eines Fluoreszenzmerkmals bei einer kennzeichnenden magnetischen Flussdichte B aufweist und
• ▪ wobei ein Fluoreszenzmerkmal ein Extremum der Fluoreszenzintensitätskurve des Fluoreszenzintensitätsmesswerts der Intensität der Fluoreszenzstrahlung (FL) in Abhängigkeit von dem Betrag der magnetischen Flussdichte (B) am Ort der paramagnetischen Zentren ist, das durch den Betrag der kennzeichnenden magnetischen Flussdichte B an diesem Extremum gekennzeichnet ist;
• ▪ Einbringen des Goniometers (MEMSG) in das Gehäuse und mechanisches und festes Verbinden des Goniometers (MEMSG) mit dem Gehäuse (GH), insbesondere mittels Klebung mit einem Kleber (GL);
• ▪ Elektrischer Anschluss des Goniometers (MEMSG) mittels Bonddrähten (BO), insbesondere mittels Verbindung elektrischer Anschlüsse des Goniometers (MEMSG) mit Anschlüssen (AN) des Gehäuses (GH) mittels Bonddrähten (BO);
• ▪ Anbringen des Kristalls (HDNV) auf dem Goniometer (MEMSG) und insbesondere Befestigen des Goniometers (MENSG) an einer verdrehbaren Teilvorrichtung (Rx, Ry, Rz) des Goniometers (MEMSG), insbesondere mittels Klemmung und/oder Klebung oder dergleichen;
• ▪ Ausrichten des Kristalls (HDNV) mit Hilfe des Goniometers (MEMSG), insbesondere gegenüber der Magnetfeldrichtung der magnetischen Flussdichte B des Magnetfelds,
• ▪ wobei die Ausrichtung bevorzugt dergestalt sein kann,
  • ◯ dass der Kristall (HDNV) nach der Ausrichtung und bei Bestrahlung mit Pumpstrahlung (LB) mit einer Pumpstrahlungswellenlänge (λ_pmp) eine Fluoreszenzstrahlung (FL) mit einer Fluoreszenzstrahlungswellenlänge (λ_fl) abstrahlt und
  • ◯ dass die Fluoreszenzintensitätskurve des Fluoreszenzintensitätsmesswerts der Intensität der Fluoreszenzstrahlung (LB) in Abhängigkeit von der magnetischen Flussdichte B bei kennzeichnenden magnetischen Flussdichten B Fluoreszenzmerkmale zeigt;
• ▪ Verschließen des Gehäuses (GH) mit einem Deckel (DE).

Feature 182: Method for manufacturing a quantum measurement system and/or a quantum technological device

• ▪ with the steps
• ▪ Providing an open cavity package (GH) with a mounting opening (OF);
• ▪ Providing a single-circle goniometer or a double-circle goniometer or a triple-circle goniometer, hereinafter referred to as a goniometer (MEMSG) as an alignment device (DMT, RT, HLT);
• ▪ Provision of a crystal (HDNV),
• ▪ wherein the goniometer (MEMSG), in the case of a single-circle goniometer, has a first axis adjusting device for a first goniometer axis and
• ▪ wherein the goniometer (MEMSG) has a first axis adjustment device for a first goniometer axis and a second axis adjustment device for a second goniometer axis in the case of a dual circuit goniometer and
• ▪ wherein the goniometer (MEMSG), in the case of a three-circle goniometer, has a first axis adjustment device for a first goniometer axis and a second axis adjustment device for a second goniometer axis and a third axis adjustment device for a third goniometer axis and
• ▪ wherein each respective crystal (HDNV) comprises one or more paramagnetic centers and/or one or more pairs of coupled paramagnetic centers and/or one or more clusters of paramagnetic centers and/or one or more clusters of pairs of coupled paramagnetic centers and
• ▪ wherein paramagnetic centers of the paramagnetic centers comprise one or more NV centers and/or one or more ST1 centers and/or one or more TR12 centers and/or one or more SIV centers and/or one or more GeV centers and/or wherein the crystal can be a diamond (HDNV) and/or wherein the crystal (HDNV) can be a HD-NV diamond and/or wherein the crystal (HDNV) can comprise a HD-NV diamond region that has the characteristics of an HD-NV diamond, and
• ▪ whereby in particular the paramagnetic centers can be coupled to nuclear spins of atoms in the vicinity of paramagnetic centers of these paramagnetic centers and
• ▪ wherein the paramagnetic centers and/or the crystal (HDNV) emit fluorescence radiation (FL) with a fluorescence wavelength (λ _fl ) when irradiated with pump radiation (LB) with a pump radiation wavelength (λ _pmp ) and
• ▪ where the fluorescence radiation (FL) depends on a magnetic flux density B at the location of the paramagnetic centers or the crystal (HDNV) with these paramagnetic centers and
• ▪ wherein the fluorescence intensity measurement of fluorescence (FL) intensity has a fluorescence intensity measurement of fluorescence (FL) intensity decrease in intensity within a fluorescence feature at a characteristic magnetic flux density B, and
• ▪ wherein a fluorescence feature is an extremum of the fluorescence intensity curve of the fluorescence intensity measurement value of the intensity of the fluorescence radiation (FL) as a function of the magnitude of the magnetic flux density (B) at the location of the paramagnetic centers, which is characterized by the magnitude of the characteristic magnetic flux density B at this extremum;
• ▪ Inserting the goniometer (MEMSG) into the housing and mechanically and firmly connecting the goniometer (MEMSG) to the housing (GH), in particular by means of gluing with an adhesive (GL);
• ▪ Electrical connection of the goniometer (MEMSG) by means of bonding wires (BO), in particular by connecting electrical connections of the goniometer (MEMSG) to connections (AN) of the housing (GH) by means of bonding wires (BO);
• ▪ Attaching the crystal (HDNV) to the goniometer (MEMSG) and in particular attaching the goniometer (MENSG) to a rotatable sub-device (Rx, Ry, Rz) of the goniometer (MEMSG), in particular by means of clamping and/or gluing or the like;
• ▪ Alignment of the crystal (HDNV) using the goniometer (MEMSG), in particular with respect to the magnetic field direction of the magnetic flux density B of the magnetic field,
• ▪ whereby the orientation can preferably be such that
  • ◯ that the crystal (HDNV) emits fluorescence radiation (FL) with a fluorescence radiation wavelength (λ _fl ) after alignment and upon irradiation with pump radiation (LB) with a pump radiation wavelength (λ _pmp ), and
  • ◯ that the fluorescence intensity curve of the fluorescence intensity measurement value of the intensity of the fluorescence radiation (LB) as a function of the magnetic flux density B shows fluorescence features at characteristic magnetic flux densities B;
• ▪ Closing the housing (GH) with a cover (DE).

• ▪ mit den Schritten
• ▪ Bereitstellen eines Open-Cavity-Gehäuses (GH) mit einer Montageöffnung (OF);
• ▪ Bereitstellen eines Einkreisgoniometers oder eines Zweikreisgoniometers oder eines Dreikreisgoniometers, im Folgenden als Goniometer (MEMSG) bezeichnet, als Ausrichtungsvorrichtung (DMT, RT, HLT);
• ▪ Bereitstellen eines Kristalls (HDNV),
• ▪ wobei das Goniometer (MEMSG) im Fall eines Einkreisgoniometers eine erste Achsenverstellvorrichtung für eine erste Goniometer-Achse aufweist und
• ▪ wobei das Goniometer (MEMSG) im Fall eines Zweikreisgoniometers eine erste Achsenverstellvorrichtung für eine erste Goniometer-Achse aufweist und eine zweite Achsenverstellvorrichtung für eine zweite Goniometer-Achse aufweist und
• ▪ wobei das Goniometer (MEMSG) im Fall eines Dreikreisgoniometers eine erste Achsenverstellvorrichtung für eine erste Goniometer-Achse aufweist und eine zweite Achsenverstellvorrichtung für eine zweite Goniometer-Achse aufweist und eine dritte Achsenverstellvorrichtung für eine dritte Goniometer-Achse aufweist und
• ▪ wobei jeder jeweilige Kristall (HDNV) ein oder mehrere paramagnetischer Zentren und/oder ein oder mehrere Paare gekoppelter paramagnetischer Zentren und/oder ein oder mehrere Cluster paramagnetischer Zentren und/oder ein oder mehrere Cluster aus Paaren gekoppelter paramagnetischer Zentren umfasst und
• ▪ wobei paramagnetischen Zentren der paramagnetischen Zentren ein oder mehrere NV-Zentren und/oder ein oder mehrere ST1-Zentren und/oder ein oder mehrere TR12-Zentren und/oder ein oder mehrere SIV-Zentren und/oder ein oder mehrere GeV-Zentren umfassen können und/oder wobei der Kristall ein Diamant (HDNV) sein kann und/oder wobei der Kristall (HDNV) ein HD-NV-Diamant sein kann und/oder wobei der Kristall (HDNV) einen HD-NV-Diamantbereich umfassen kann, der die Merkmale eines HD-NV-Diamanten aufweist, und
• ▪ wobei insbesondere die paramagnetischen Zentren an nukleare Spins von Atomen in der Umgebung paramagnetischer Zentren dieser paramagnetischen Zentren koppelbar sein können und
• ▪ wobei die paramagnetischen Zentren und/oder der Kristall (HDNV) eine Fluoreszenzstrahlung (FL) mit einer Fluoreszenzwellenlänge (λ_fl) bei Bestrahlung mit einer mit der Modulation eines Modulationssignals (S5) modulierten Pumpstrahlung (LB) mit einer Pumpstrahlungswellenlänge (λ_pmp) abgeben und
• ▪ wobei die Fluoreszenzstrahlung (FL) von einer magnetischen Flussdichte B am Ort der paramagnetischen Zentren bzw. des Kristalls (HDNV) mit diesen paramagnetischen Zentren abhängt und
• ▪ wobei der Fluoreszenzverzögerungsmesswert der zeitlichen Verzögerung der Modulation der Intensität der Fluoreszenzstrahlung (FL) gegenüber der Modulation der Intensität der Pumpstrahlung oder gegenüber der Modulation des Modulationssignals (S6) oder gegenüber der Modulation eines daraus abgeleiteten Signals einen Verzögerungsanstieg dieses Fluoreszenzverzögerungsmesswerts innerhalb eines Fluoreszenzmerkmals bei einer kennzeichnenden magnetischen Flussdichte B aufweist und
• ▪ wobei ein Fluoreszenzmerkmal ein Extremum der Fluoreszenzverzögerungskurve des Fluoreszenzverzögerungsmesswerts der zeitlichen Verzögerung der Modulation der Intensität der Fluoreszenzstrahlung (FL) gegenüber der Modulation der Intensität der Pumpstrahlung oder gegenüber der Modulation des Modulationssignals (S6) oder gegenüber der Modulation eines daraus abgeleiteten Signals in Abhängigkeit von dem Betrag der magnetischen Flussdichte (B) am Ort der paramagnetischen Zentren ist, das durch den Betrag der kennzeichnenden magnetischen Flussdichte B an diesem Extremum gekennzeichnet ist;
• ▪ Einbringen des Goniometers (MEMSG) in das Gehäuse (GH) und mechanisches und festes Verbinden des Goniometers (MEMSG) mit dem Gehäuse (GH), insbesondere mittels Klebung mit einem Kleber (GL);
• ▪ Elektrischer Anschluss des Goniometers (MEMSG) mittels Bonddrähten (BO), insbesondere mittels Verbindung elektrischer Anschlüsse des Goniometers (MEMSG) mit Anschlüssen (AN) des Gehäuses (GH) mittels Bonddrähten (BO);
• ▪ Anbringen des Kristalls (HDNV) auf dem Goniometer (MEMSG) und insbesondere Befestigen des Goniometers (MENSG) an einer verdrehbaren Teilvorrichtung (Rx, Ry, Rz) des Goniometers (MEMSG), insbesondere mittels Klemmung und/oder Klebung oder dergleichen;
• ▪ Ausrichten des Kristalls (HDNV) mit Hilfe des Goniometers (MEMSG), insbesondere gegenüber der Magnetfeldrichtung der magnetischen Flussdichte B des Magnetfelds,
• ▪ wobei die Ausrichtung bevorzugt dergestalt sein kann,
  • ◯ dass der Kristall (HDNV) nach der Ausrichtung und bei Bestrahlung mit Pumpstrahlung (LB) mit einer Pumpstrahlungswellenlänge (λ_pmp) eine Fluoreszenzstrahlung (FL) mit einer Fluoreszenzstrahlungswellenlänge (λ_fl) abstrahlt und
  • ◯ dass die Fluoreszenzverzögerungskurve des Fluoreszenzverzögerungsmesswerts der zeitlichen Verzögerung der Modulation der Intensität der Fluoreszenzstrahlung (FL) gegenüber der Modulation der Intensität der Pumpstrahlung oder gegenüber der Modulation des Modulationssignals (S6) oder gegenüber der Modulation eines daraus abgeleiteten Signals in Abhängigkeit von der magnetischen Flussdichte B bei kennzeichnenden magnetischen Flussdichten B Fluoreszenzmerkmale zeigt;
• ▪ Verschließen des Gehäuses (GH) mit einem Deckel (DE).

Feature 183: Method for producing a quantum measurement system and/or a quantum technological device

• ▪ with the steps
• ▪ Providing an open cavity package (GH) with a mounting opening (OF);
• ▪ Providing a single-circle goniometer or a double-circle goniometer or a triple-circle goniometer, hereinafter referred to as a goniometer (MEMSG) as an alignment device (DMT, RT, HLT);
• ▪ Provision of a crystal (HDNV),
• ▪ wherein the goniometer (MEMSG), in the case of a single-circle goniometer, has a first axis adjusting device for a first goniometer axis and
• ▪ wherein the goniometer (MEMSG) has a first axis adjustment device for a first goniometer axis and a second axis adjustment device for a second goniometer axis in the case of a dual circuit goniometer and
• ▪ wherein the goniometer (MEMSG), in the case of a three-circle goniometer, has a first axis adjustment device for a first goniometer axis and a second axis adjustment device for a second goniometer axis and a third axis adjustment device for a third goniometer axis and
• ▪ wherein each respective crystal (HDNV) comprises one or more paramagnetic centers and/or one or more pairs of coupled paramagnetic centers and/or one or more clusters of paramagnetic centers and/or one or more clusters of pairs of coupled paramagnetic centers and
• ▪ wherein paramagnetic centers of the paramagnetic centers comprise one or more NV centers and/or one or more ST1 centers and/or one or more TR12 centers and/or one or more SIV centers and/or one or more GeV centers and/or wherein the crystal can be a diamond (HDNV) and/or wherein the crystal (HDNV) can be a HD-NV diamond and/or wherein the crystal (HDNV) can comprise a HD-NV diamond region that has the characteristics of an HD-NV diamond, and
• ▪ whereby in particular the paramagnetic centers can be coupled to nuclear spins of atoms in the vicinity of paramagnetic centers of these paramagnetic centers and
• ▪ wherein the paramagnetic centers and/or the crystal (HDNV) emit fluorescence radiation (FL) with a fluorescence wavelength (λ _fl ) when irradiated with a pump radiation (LB) modulated with the modulation of a modulation signal (S5) with a pump radiation wavelength (λ _pmp ). and
• ▪ where the fluorescence radiation (FL) depends on a magnetic flux density B at the location of the paramagnetic centers or the crystal (HDNV) with these paramagnetic centers and
• ▪ wherein the fluorescence delay measured value of the time delay of the modulation of the intensity of the fluorescence radiation (FL) compared to the modulation of the intensity of the pump radiation or compared to the modulation of the modulation signal (S6) or compared to the modulation of a signal derived therefrom shows a delay increase of this fluorescence delay measured value within a fluorescence feature at a characteristic magnetic flux density B and
• ▪ wherein a fluorescence feature is an extremum of the fluorescence delay curve of the fluorescence delay measured value of the time delay of the modulation of the intensity of the fluorescence radiation (FL) versus the modulation of the intensity of the pump radiation or versus the modulation of the modulation signal (S6) or versus the modulation of a signal derived therefrom depending on the is the magnitude of the magnetic flux density (B) at the location of the paramagnetic centers, which is characterized by the magnitude of the characteristic magnetic flux density B at that extremum;
• ▪ Inserting the goniometer (MEMSG) into the housing (GH) and mechanically and firmly connecting the goniometer (MEMSG) to the housing (GH), in particular by gluing with an adhesive (GL);
• ▪ Electrical connection of the goniometer (MEMSG) by means of bonding wires (BO), in particular by connecting electrical connections of the goniometer (MEMSG) to connections (AN) of the housing (GH) by means of bonding wires (BO);
• ▪ Attaching the crystal (HDNV) to the goniometer (MEMSG) and in particular attaching the goniometer (MENSG) to a rotatable sub-device (Rx, Ry, Rz) of the goniometer (MEMSG), in particular by means of clamping and/or gluing or the like;
• ▪ Alignment of the crystal (HDNV) using the goniometer (MEMSG), in particular with respect to the magnetic field direction of the magnetic flux density B of the magnetic field,
• ▪ whereby the orientation can preferably be such that
  • ◯ that the crystal (HDNV) emits fluorescence radiation (FL) with a fluorescence radiation wavelength (λ _fl ) after alignment and upon irradiation with pump radiation (LB) with a pump radiation wavelength (λ _pmp ), and
  • ◯ that the fluorescence delay curve of the fluorescence delay measured value contributes to the time delay of the modulation of the intensity of the fluorescence radiation (FL) versus the modulation of the intensity of the pump radiation or versus the modulation of the modulation signal (S6) or versus the modulation of a signal derived therefrom as a function of the magnetic flux density B characteristic magnetic flux densities B shows fluorescence features;
• ▪ Closing the housing (GH) with a cover (DE).

• ▪ Aussetzen des Kristalls (HDNV) einer magnetischen Flussdichte B, wobei diese magnetische Flussdichte B im Wesentlichen einer kennzeichnenden magnetischen Flussdichte eines Fluoreszenzmerkmals entspricht;
• ▪ Beststrahlen des Kristalls (HDNV) mit Pumpstrahlung (LB) einer Pumpstrahlungswellenlänge (λ_pmp);
• ▪ Erfassen der Fluoreszenzstrahlung (FL) der Fluoreszenzstrahlungswellenlänge (λ_fl) und Bilden eines Fluoreszenzintensitätsmesswerts und/oder eines Fluoreszenzverzögerungsmesswerts;
• ▪ Änderung der Ausrichtung des Kristalls (HDNV) mit Hilfe des Goniometers (MEMSG), bis ein Minimum des Fluoreszenzintensitätsmesswerts der Intensität der Fluoreszenzstrahlung (FL) und/oder ein Maximum des Fluoreszenzverzögerungsmesswerts der zeitlichen Verzögerung der Modulation der Fluoreszenzstrahlung (FL) gegenüber der Modulation der Pumpstrahlung (LB) oder gegenüber der Modulation des Modulationssignals (S5) oder gegenüber der Modulation eines daraus abgeleiteten Signals im Wesentlichen erreicht ist;
• ▪ Beenden der Ausrichtung des Kristalls (HDNV), wenn dieses Minimum des Fluoreszenzintensitätsmesswerts der Intensität der Fluoreszenzstrahlung (FL) und/oder dieses Maximum des Fluoreszenzverzögerungsmesswerts der zeitlichen Verzögerung der Modulation der Fluoreszenzstrahlung (FL) gegenüber der Modulation der Pumpstrahlung (LB) oder gegenüber der Modulation des Modulationssignals (S5) oder gegenüber der Modulation eines daraus abgeleiteten Signals im Wesentlichen erreicht ist und der Kristall (HDNV) dann ausgerichtet ist.

Feature 184: The method of feature 182 and/or feature 183 including the following steps to perform the alignment

• ▪ exposing the crystal (HDNV) to a magnetic flux density B, this magnetic flux density B substantially corresponding to a magnetic flux density characteristic of a fluorescent feature;
• ▪ Best radiation of the crystal (HDNV) with pump radiation (LB) of a pump radiation wavelength (λ _pmp );
• ▪ detecting the fluorescence radiation (FL) of the fluorescence radiation wavelength (λ _fl ) and forming a fluorescence intensity measurement value and/or a fluorescence delay measurement value;
• ▪ Changing the orientation of the crystal (HDNV) using the goniometer (MEMSG) until a minimum of the fluorescence intensity reading of the intensity of the fluorescence radiation (FL) and/or a maximum of the fluorescence delay reading of the time delay of the modulation of the fluorescence radiation (FL) compared to the modulation of the Pump radiation (LB) or relative to the modulation of the modulation signal (S5) or relative to the modulation of a signal derived therefrom is essentially reached;
• ▪ Terminating the alignment of the crystal (HDNV) when this minimum of the fluorescence intensity reading of the intensity of the fluorescence radiation (FL) and/or this maximum of the fluorescence delay measurement of the time delay of the modulation of the fluorescence radiation (FL) with respect to the modulation of the pump radiation (LB) or with respect to the Modulation of the modulation signal (S5) or to the modulation of a signal derived therefrom is substantially achieved and the crystal (HDNV) is then aligned.

• ▪ Kalibrieren des Quantenmesssystem und/oder der quantentechnologischen Vorrichtung insbesondere nach einem oder mehreren der Verfahren nach den Merkmale 9 bis 70.

Feature 185: Method according to one or more of features 182 to 184, comprising the following steps for performing the alignment

• ▪ Calibration of the quantum measurement system and/or the quantum technological device, in particular according to one or more of the methods according to features 9 to 70.

Feature 186: Use of a quantum measuring system and/or a quantum technological device that has been produced by a method according to one or more of features 182 to 185 as a measuring device for a physical variable that acts on the measuring device or as a quantum computer sub-device.

Features XXIII (manufacturing process with alignment device and with Cpk>1.66)

• ▪ wobei die Anzahl n der quantentechnologischen Vorrichtungen größer als 10 und/oder größer als 20 und/oder größer als 50 und/oder größer als 100 und/oder größer als 200 und/oder größer als 500 und/oder größer als 1000 und/oder größer als 2000 und/oder größer als 5000 ist und
• ▪ wobei m eine ganze positive Zahl größer oder gleich n ist und ▪ wobei jede der quantentechnologischen Vorrichtungen jeweils ein Gehäuse (GH) aufweist und
• ▪ wobei jede der quantentechnologischen Vorrichtungen jeweils einen Kristall (HDNV) aufweist und
• ▪ wobei jedes Gehäuse (GH) eine Montagefläche (VF, AF) aufweist und ▪ wobei die Montagefläche (VF, AF) in einer ersten möglichen Definition durch eine Verbindungsfläche (VF) zwischen dem Kristall (HDNV) und dem Gehäuse (GH) definiert ist oder
• ▪ wobei die Montagefläche (VF, AF) in einer zweiten möglichen, dazu alternativen Definition durch Befestigungspunkte des Gehäuses, die insbesondere auch durch die elektrische Anschlüsse (AN) des Gehäuses (DH) definiert ist und
• ▪ wobei die jeweilige Montagefläche (AF, VF) eine jeweilige Flächennormale (FNDI, FNAN) aufweist, die entsprechend der Definition einer Normalen jeweils senkrecht zu der jeweiligen Montagefläche (ANFN) ist, und
• ▪ wobei jeder jeweilige Kristall (HDNV) ein oder mehrere paramagnetischer Zentren und/oder ein oder mehrere Paare gekoppelter paramagnetischer Zentren und/oder ein oder mehrere Cluster paramagnetischer Zentren und/oder ein oder mehrere Cluster aus Paaren gekoppelter paramagnetischer Zentren umfasst und
• ▪ wobei paramagnetischen Zentren der paramagnetischen Zentren ein oder mehrere NV-Zentren und/oder ein oder mehrere ST1-Zentren und/oder ein oder mehrere TR12-Zentren und/oder ein oder mehrere SIV-Zentren und/oder ein oder mehrere GeV-Zentren umfassen können und/oder wobei der Kristall ein Diamant (HDNV) sein kann und/oder wobei der Kristall (HDNV) ein HD-NV-Diamant sein kann und/oder wobei der Kristall (HDNV) einen HD-NV-Diamantbereich umfassen kann, der die Merkmale eines HD-NV-Diamanten aufweist, und
• ▪ wobei insbesondere die paramagnetischen Zentren an nukleare Spins von Atomen in der Umgebung paramagnetischer Zentren dieser paramagnetischen Zentren koppelbar sein können und
• ▪ wobei ein oder mehrere paramagnetische Zentren der paramagnetischen Zentren jedes jeweilige Kristall (HDNV) der jeweiligen quantentechnologischen Vorrichtungen eine jeweilige Vorzugsrichtung, im Folgenden auch als Kristallrichtung des jeweiligen Kristalls (HDNV) bezeichnet, aufweisen und
• ▪ wobei diese Kristallrichtung um einen Kippwinkel gegenüber der Flächennormale (FNDI, FNAN) verkippt ist, wobei der Kippwinkel 0° sein kann, und
• ▪ wobei sich die Kippwinkel dieser Kristallrichtungen der verschiedenen n gleichen, quantentechnologischer Vorrichtungen sich zumindest zweitweise, insbesondere im Betrieb, untereinander um nicht mehr als +/-10° und/oder um nicht mehr als +/-5° um nicht mehr als +/-2° um nicht mehr als +/-1° und/oder um nicht mehr als +/-0,5° um nicht mehr als +/-0,2° um nicht mehr als +/-0,1° und/oder um nicht mehr als +/-0,05° um nicht mehr als +/-0,02° um nicht mehr als +/-0,01° und/oder um nicht mehr als +/-0,005° um nicht mehr als +/-0,002° um nicht mehr als +/-0,001°bezogen auf das Gehäuse (GH) der Vorrichtung unterscheiden und
• ▪ dass der C_pk-Wert der Kippwinkel zu diesen Zeiten bezogen auf das Kippwinkelintervall von +/-10° und/oder bezogen auf das Kippwinkelintervall von +/-5° und/oder bezogen auf das Kippwinkelintervall von +/-2° und/oder bezogen auf das Kippwinkelintervall von +/-1° und/oder bezogen auf das Kippwinkelintervall von +/-0,5° und/oder bezogen auf das Kippwinkelintervall von +/-0,2° und/oder bezogen auf das Kippwinkelintervall von +/-0,1° und/oder bezogen auf das Kippwinkelintervall von +/-0,05° und/oder bezogen auf das Kippwinkelintervall von +/-0,02° und/oder bezogen auf das Kippwinkelintervall von +/-0,01° und/oder bezogen auf das Kippwinkelintervall von +/-0,005° und/oder bezogen auf das Kippwinkelintervall von +/-0,002° und/oder bezogen auf das Kippwinkelintervall von +/-0,001° bezogen auf die jeweiligen Flächennormalen (FNDI, FNAN) der jeweiligen Montageflächen (AN, FN)der jeweiligen Gehäuse (GH) der n gleichen, quantentechnologischer Vorrichtungen besser als 1,66 ist.

Feature 187: Quantity of n identical quantum technological devices of a series production of m quantum technological devices

• ▪ where the number n of quantum technological devices is greater than 10 and/or greater than 20 and/or greater than 50 and/or greater than 100 and/or greater than 200 and/or greater than 500 and/or greater than 1000 and/or is greater than 2000 and/or greater than 5000 and
• ▪ where m is a positive integer greater than or equal to n and ▪ where each of the quantum technological devices has a housing (GH) and
• ▪ wherein each of the quantum technological devices has a crystal (HDNV) and
• ▪ wherein each housing (GH) has a mounting surface (VF, AF) and ▪ wherein the mounting surface (VF, AF) is defined in a first possible definition by a connection surface (VF) between the crystal (HDNV) and the housing (GH). or
• ▪ wherein the mounting surface (VF, AF) in a second possible, alternative definition by attachment points of the housing, which is defined in particular by the electrical connections (AN) of the housing (DH) and
• ▪ wherein the respective mounting surface (AF, VF) has a respective surface normal (FNDI, FNAN), which is perpendicular to the respective mounting surface (ANFN) in accordance with the definition of a normal, and
• ▪ wherein each respective crystal (HDNV) comprises one or more paramagnetic centers and/or one or more pairs of coupled paramagnetic centers and/or one or more clusters of paramagnetic centers and/or one or more clusters of pairs of coupled paramagnetic centers and
• ▪ wherein paramagnetic centers of the paramagnetic centers comprise one or more NV centers and/or one or more ST1 centers and/or one or more TR12 centers and/or one or more SIV centers and/or one or more GeV centers and/or wherein the crystal can be a diamond (HDNV) and/or wherein the crystal (HDNV) can be a HD-NV diamond and/or wherein the crystal (HDNV) can comprise a HD-NV diamond region that has the characteristics of an HD-NV diamond, and
• ▪ whereby in particular the paramagnetic centers can be coupled to nuclear spins of atoms in the vicinity of paramagnetic centers of these paramagnetic centers and
• ▪ wherein one or more paramagnetic centers of the paramagnetic centers of each respective crystal (HDNV) of the respective quantum technological devices have a respective preferred direction, hereinafter also referred to as the crystal direction of the respective crystal (HDNV), and
• ▪ where this crystal direction is tilted by a tilt angle with respect to the surface normal (FNDI, FNAN), whereby the tilt angle can be 0°, and
• ▪ where the tilt angles of these crystal directions of the different n, quantum technological devices are the same, at least in part, especially during operation, by no more than +/-10° and/or by no more than +/-5° by no more than +/- -2° by no more than +/-1° and/or by no more than +/-0.5° by no more than +/-0.2° by no more than +/-0.1° and/or or about no more than +/-0.05° by no more than +/-0.02° by no more than +/-0.01° and/or by no more than +/-0.005° by no more than +/-0.002 ° differ by no more than +/-0.001° with respect to the housing (GH) of the device and
• ▪ that the C _pk value of the tipping angle at these times related to the tipping angle interval of +/-10° and/or related to the tipping angle interval of +/-5° and/or related to the tipping angle interval of +/-2° and/or or related to the tilt angle interval of +/-1° and/or related to the tilt angle interval of +/-0.5° and/or related to the tilt angle interval of +/-0.2° and/or related to the tilt angle interval of + /−0.1° and/or based on the tilt angle interval of +/-0.05° and/or based on the tilt angle interval of +/-0.02° and/or based on the tilt angle interval of +/-0.01 ° and/or related to the tilt angle interval of +/-0.005° and/or related to the tilt angle interval of +/-0.002° and/or related to the tilt angle interval of +/-0.001° related to the respective surface normals (FNDI, FNAN) of the respective mounting surfaces (AN, FN) of the respective housings (GH) of the n same quantum technological devices is better than 1.66.

• ▪ wobei jede der von n gleichen, quantentechnologischen Vorrichtungen eine Ausrichtungsvorrichtung (MEMSG, DMT, RT, HLT) für den Kristall (HDNV) umfasst.

Feature 188: quantity of n identical quantum technological devices of a series production of m quantum technological devices according to feature 187,

• ▪ wherein each of the n equal quantum technological devices comprises an alignment device (MEMSG, DMT, RT, HLT) for the crystal (HDNV).

• ▪ wobei die Ausrichtungsvorrichtung (MEMSG, DMT, RT, HLT) ein Einkreis-, Zweikreis- oder Dreikreisgoniometer (MEMSG) ist.

Feature 189: quantity of n identical quantum technological devices of a series production of m quantum technological devices according to feature 188,

• ▪ where the alignment device (MEMSG, DMT, RT, HLT) is a single-circle, double-circle or triple-circle goniometer (MEMSG).

• ▪ wobei jede der von n gleichen, quantentechnologischen Vorrichtungen einen Kristall (HDNV) umfasst, der mittels einer Ausrichtungsvorrichtung (MEMSG, DMT, RT, HLT) für den Kristall zumindest zeitweise ausgerichtet wird oder ausgerichtet worden ist.

Feature 190: quantity of n identical quantum technological devices of a series production of m quantum technological devices according to feature 187 or feature 189,

• ▪ wherein each of the n identical quantum technological devices comprises a crystal (HDNV) which is or has been aligned at least temporarily by means of an alignment device (MEMSG, DMT, RT, HLT) for the crystal.

Features XXIV (manufacturing process with magnet alignment and with Cpk>1.66)

• ▪ wobei die Anzahl n der quantentechnologischen Vorrichtungen größer als 10 und/oder größer als 20 und/oder größer als 50 und/oder größer als 100 und/oder größer als 200 und/oder größer als 500 und/oder größer als 1000 und/oder größer als 2000 und/oder größer als 5000 ist und
• ▪ wobei m eine ganze positive Zahl größer oder gleich n ist und
• ▪ wobei jede der quantentechnologischen Vorrichtungen jeweils eine Magnetfeld erzeugende Vorrichtung (MG, MGx, MGy, MGz) aufweist und
• ▪ wobei jede der Magnetfeld erzeugenden Vorrichtungen (MG, MGx, MGy, MGz) jeweils ein Magnetfeld mit einer Flussdichte B und einer Magnetfeldrichtung erzeugen kann und
• ▪ wobei jede der quantentechnologischen Vorrichtungen einen Kristall (HDNV) aufweist und
• ▪ wobei jeder jeweilige Kristall (HDNV) ein oder mehrere paramagnetischer Zentren und/oder ein oder mehrere Paare gekoppelter paramagnetischer Zentren und/oder ein oder mehrere Cluster paramagnetischer Zentren und/oder ein oder mehrere Cluster aus Paaren gekoppelter paramagnetischer Zentren umfasst und
• ▪ wobei paramagnetischen Zentren der paramagnetischen Zentren ein oder mehrere NV-Zentren und/oder ein oder mehrere ST1-Zentren und/oder ein oder mehrere TR12-Zentren und/oder ein oder mehrere SIV-Zentren und/oder ein oder mehrere GeV-Zentren umfassen können und/oder wobei der Kristall ein Diamant (HDNV) sein kann und/oder wobei der Kristall (HDNV) ein HD-NV-Diamant sein kann und/oder wobei der Kristall (HDNV) einen HD-NV-Diamantbereich umfassen kann, der die Merkmale eines HD-NV-Diamanten aufweist, und
• ▪ wobei insbesondere die paramagnetischen Zentren an nukleare Spins von Atomen in der Umgebung paramagnetischer Zentren dieser paramagnetischen Zentren koppelbar sein können und
• ▪ wobei ein oder mehrere paramagnetische Zentren der paramagnetischen Zentren jedes jeweilige Kristall (HDNV) der jeweiligen quantentechnologischen Vorrichtungen eine jeweilige Vorzugsrichtung, im Folgenden auch als Kristallrichtung des jeweiligen Kristalls (HDNV) bezeichnet, aufweisen und
• ▪ wobei diese jeweilige Kristallrichtung des jeweiligen Kristalls (HDNV) der jeweiligen quantentechnologischen Vorrichtung bei Erzeugung eines magnetischen Feldes mit einer magnetischen Flussdichte B durch die jeweilige Magnetfeld erzeugende Vorrichtung (MG, MGx, MGy, MGz) dieser jeweiligen quantentechnologischen Vorrichtung um einen jeweiligen Kippwinkel gegenüber der jeweiligen Magnetfeldrichtung der magnetische Flussdichte B verkippt ist, wobei der Kippwinkel 0° sein kann, und
• ▪ wobei sich die jeweiligen Kippwinkel der jeweiligen Vorrichtung der n quantentechnologischer Vorrichtungen sich zumindest zweitweise, insbesondere im Betrieb, untereinander um nicht mehr als +/-10° und/oder um nicht mehr als +/-5° und/oder um nicht mehr als +/-2° und/oder um nicht mehr als +/-1° und/oder um nicht mehr als +/-0,5° und/oder um nicht mehr als +/-0,2° und/oder um nicht mehr als +/-0,1° und/oder um nicht mehr als +/-0,05° und/oder um nicht mehr als +/-0,02° und/oder um nicht mehr als +/-0,01° und/oder um nicht mehr als +/-0.005° und/oder um nicht mehr als +/-0,002° und/oder um nicht mehr als +/-0,001° bezogen auf die jeweilige Magnetfeldrichtung der magnetischen Flussdichte B der jeweiligen Vorrichtung, die die jeweilige Magnetfeld erzeugende Vorrichtung (MG, MGx, MGy, MGz) dieser jeweiligen quantentechnologischen Vorrichtung unter gleichen Bedingungen und Parametereinstellungen erzeugen, unterscheiden und
• ▪ dass der C_pk-Wert der Kippwinkel dieser n Vorrichtungen zu diesen Zeiten bezogen auf das Kippwinkelintervall von +/-10° und/oder bezogen auf das Kippwinkelintervall von +/-5° und/oder bezogen auf das Kippwinkelintervall von +/-2° und/oder bezogen auf das Kippwinkelintervall von +/-1° und/oder bezogen auf das Kippwinkelintervall von +/-0,5° und/oder bezogen auf das Kippwinkelintervall von +/-0,2° und/oder bezogen auf das Kippwinkelintervall von +/-0,1° und/oder bezogen auf das Kippwinkelintervall von +/-0,05° und/oder bezogen auf das Kippwinkelintervall von +/-0,02° und/oder bezogen auf das Kippwinkelintervall von +/-0,01° und/oder bezogen auf das Kippwinkelintervall von +/-0,005° und/oder bezogen auf das Kippwinkelintervall von +/-0,002° und/oder bezogen auf das Kippwinkelintervall von +/-0,001° jeweils bezogen auf die jeweiligen Magnetfeldrichtungen der magnetischen Flussdichte B der jeweiligen Vorrichtung der n gleichen, quantentechnologischen Vorrichtungen, die die jeweilige Magnetfeld erzeugende Vorrichtung (MG, MGx, MGy, MGz) dieser jeweiligen quantentechnologischen Vorrichtung unter gleichen Bedingungen und Parametereinstellungen erzeugen, besser als 1,66 ist.

Feature 191: Quantity of n identical quantum technological devices of a series production of m quantum technological devices

• ▪ where the number n of quantum technological devices is greater than 10 and/or greater than 20 and/or greater than 50 and/or greater than 100 and/or greater than 200 and/or greater than 500 and/or greater than 1000 and/or is greater than 2000 and/or greater than 5000 and
• ▪ where m is a positive integer greater than or equal to n and
• ▪ wherein each of the quantum technological devices has a magnetic field generating device (MG, MGx, MGy, MGz) and
• ▪ wherein each of the magnetic field generating devices (MG, MGx, MGy, MGz) can respectively generate a magnetic field with a flux density B and a magnetic field direction and
• ▪ wherein each of the quantum technological devices comprises a crystal (HDNV), and
• ▪ wherein each respective crystal (HDNV) comprises one or more paramagnetic centers and/or one or more pairs of coupled paramagnetic centers and/or one or more clusters of paramagnetic centers and/or one or more clusters of pairs of coupled paramagnetic centers and
• ▪ wherein paramagnetic centers of the paramagnetic centers comprise one or more NV centers and/or one or more ST1 centers and/or one or more TR12 centers and/or one or more SIV centers and/or one or more GeV centers and/or wherein the crystal can be a diamond (HDNV) and/or wherein the crystal (HDNV) can be a HD-NV diamond and/or wherein the crystal (HDNV) can comprise a HD-NV diamond region that has the characteristics of an HD-NV diamond, and
• ▪ whereby in particular the paramagnetic centers can be coupled to nuclear spins of atoms in the vicinity of paramagnetic centers of these paramagnetic centers and
• ▪ wherein one or more paramagnetic centers of the paramagnetic centers of each respective crystal (HDNV) of the respective quantum technological devices have a respective preferred direction, hereinafter also referred to as the crystal direction of the respective crystal (HDNV), and
• ▪ wherein this respective crystal direction of the respective crystal (HDNV) of the respective quantum technological device upon generation of a magnetic field with a magnetic flux density B by the respective magnetic field generating device (MG, MGx, MGy, MGz) of this respective quantum technological device by a respective tilt angle compared to the respective magnetic field direction of the magnetic flux density B is tilted, wherein the tilt angle can be 0°, and
• ▪ wherein the respective tilt angles of the respective device of the n quantum technological devices differ at least in part, in particular during operation, by no more than +/-10° and/or by no more than +/-5° and/or by no more than +/-2° and/or by no more than +/-1° and/or by no more than +/-0.5° and/or by no more than +/-0.2° and/or by no more more than +/-0.1° and/or by no more than +/-0.05° and/or by no more than +/-0.02° and/or by no more than +/-0.01 ° and/or by no more than +/-0.005° and/or by no more than +/-0.002° and/or by no more than +/-0.001° based on the respective magnetic field direction of the magnetic flux density B of the respective device, generate, distinguish and distinguish the respective magnetic field generating device (MG, MGx, MGy, MGz) of this respective quantum technological device under the same conditions and parameter settings
• ▪ that the C _pk value of the tilt angles of these n devices at these times related to the tilt angle interval of +/-10° and/or related to the tilt angle interval of +/-5° and/or related to the tilt angle interval of +/-2 ° and/or based on the tilt angle interval of +/-1° and/or based on the tilt angle interval of +/-0.5° and/or based on the tilt angle interval of +/-0.2° and/or based on the Tilt angle interval of +/-0.1° and/or related to the tilt angle interval of +/-0.05° and/or related to the tilt angle interval of +/-0.02° and/or related to the tilt angle interval of +/- 0.01° and/or based on the tilt angle interval of +/-0.005° and/or based on the tilt angle interval of +/-0.002° and/or based on the tilt angle interval of +/-0.001° each based on the respective magnetic field directions magnetic flux density B of the respective device of the n same quantum technological devices that contain the respective Mag net field generating device (MG, MGx, MGy, MGz) of this respective quantum technological device under the same conditions and parameter settings is better than 1.66.

Features XXV (manufacturing process with goniometer in housing)

• ▪ mit den Schritten
• ▪ Bereitstellen eines Kristalls (HDNV),
• ▪ wobei jeder jeweilige Kristall (HDNV) ein oder mehrere paramagnetischer Zentren und/oder ein oder mehrere Paare gekoppelter paramagnetischer Zentren und/oder ein oder mehrere Cluster paramagnetischer Zentren und/oder ein oder mehrere Cluster aus Paaren gekoppelter paramagnetischer Zentren umfasst und
• ▪ wobei paramagnetischen Zentren der paramagnetischen Zentren ein oder mehrere NV-Zentren und/oder ein oder mehrere ST1-Zentren und/oder ein oder mehrere TR12-Zentren und/oder ein oder mehrere SIV-Zentren und/oder ein oder mehrere GeV-Zentren umfassen können und/oder wobei der Kristall ein Diamant (HDNV) sein kann und/oder wobei der Kristall (HDNV) ein HD-NV-Diamant sein kann und/oder wobei der Kristall (HDNV) einen HD-NV-Diamantbereich umfassen kann, der die Merkmale eines HD-NV-Diamanten aufweist, und
• ▪ wobei insbesondere die paramagnetischen Zentren an nukleare Spins von Atomen in der Umgebung paramagnetischer Zentren dieser paramagnetischen Zentren koppelbar sein können und
• ▪ wobei die paramagnetischen Zentren eine Fluoreszenzstrahlung (FL) mit einer Fluoreszenzstrahlungswellenlänge (λ_pmp) bei Bestrahlung mit Pumpstrahlung (LB) mit einer Pumpstrahlungswellenlänge (λ_pmp) abgeben und
• ▪ wobei die Fluoreszenzstrahlung (FL) von einer magnetischen Flussdichte B am Ort paramagnetischer Zentren der der paramagnetischen Zentren bzw. des Kristalls mit diesen paramagnetischen Zentren abhängt und
• ▪ wobei der Fluoreszenzintensitätsmesswert der Intensität der Fluoreszenzstrahlung (FL) einen Intensitätsabfall des Fluoreszenzintensitätsmesswerts der Intensität der Fluoreszenzstrahlung (FL) innerhalb eines Fluoreszenzmerkmals bei einer kennzeichnenden magnetischen Flussdichte B aufweist und
• ▪ wobei ein Fluoreszenzmerkmal ein Extremum der Fluoreszenzintensitätskurve des Fluoreszenzintensitätsmesswerts der Intensität der Fluoreszenzstrahlung (FL) in Abhängigkeit von dem Betrag der magnetischen Flussdichte (B) am Ort der paramagnetischen Zentren ist, das durch den Betrag der kennzeichnenden magnetischen Flussdichte B an diesem Extremum gekennzeichnet ist;
• ▪ Ausrichten des Kristalls (HDNV) mit Hilfe eines Einkreisgoniometers oder eines Zweikreisgoniometers oder eines Dreikreisgoniometers, im Folgenden als Goniometer (MEMSG) bezeichnet, sodass der Kristall (HDNV) nach der Ausrichtung eine Ausrichtungsorientierung aufweist;
• ▪ Platzieren und Befestigen des Kristalls (HDNV) in einem Gehäuse (GH) und Befestigen des Kristalls (GH) mittels Klemmung und/oder Klebung und/oder dergleichen,
• ▪ wobei die Orientierung des Kristalls (HDNV)) im Gehäuse (GH) von der Ausrichtungsorientierung abhängt, bevorzugt der Ausrichtungsorientierung entspricht.

Feature 192: Method for manufacturing a quantum measurement system and/or quantum technological device

• ▪ with the steps
• ▪ Provision of a crystal (HDNV),
• ▪ wherein each respective crystal (HDNV) comprises one or more paramagnetic centers and/or one or more pairs of coupled paramagnetic centers and/or one or more clusters of paramagnetic centers and/or one or more clusters of pairs of coupled paramagnetic centers and
• ▪ wherein paramagnetic centers of the paramagnetic centers comprise one or more NV centers and/or one or more ST1 centers and/or one or more TR12 centers and/or one or more SIV centers and/or one or more GeV centers and/or wherein the crystal can be a diamond (HDNV) and/or wherein the crystal (HDNV) can be a HD-NV diamond and/or wherein the crystal (HDNV) can comprise a HD-NV diamond region that has the characteristics of an HD-NV diamond, and
• ▪ whereby in particular the paramagnetic centers can be coupled to nuclear spins of atoms in the vicinity of paramagnetic centers of these paramagnetic centers and
• ▪ wherein the paramagnetic centers emit fluorescence radiation (FL) with a fluorescence radiation wavelength (λ _pmp ) upon irradiation with pump radiation (LB) with a pump radiation wavelength (λ _pmp ) and
• ▪ where the fluorescence radiation (FL) depends on a magnetic flux density B at the location of paramagnetic centers of the paramagnetic centers or the crystal with these paramagnetic centers and
• ▪ wherein the fluorescence intensity measurement of fluorescence (FL) intensity has a fluorescence intensity measurement of fluorescence (FL) intensity decrease in intensity within a fluorescence feature at a characteristic magnetic flux density B, and
• ▪ wherein a fluorescence feature is an extremum of the fluorescence intensity curve of the fluorescence intensity measurement value of the intensity of the fluorescence radiation (FL) as a function of the magnitude of the magnetic flux density (B) at the location of the paramagnetic centers, which is characterized by the magnitude of the characteristic magnetic flux density B at this extremum;
• ▪ aligning the crystal (HDNV) using a single-circle goniometer or a double-circle goniometer or a triple-circle goniometer, hereinafter referred to as a goniometer (MEMSG), so that the crystal (HDNV) has an alignment orientation after alignment;
• ▪ Placing and fixing the crystal (HDNV) in a housing (GH) and fixing the crystal (GH) by means of clamping and/or gluing and/or the like,
• ▪ where the orientation of the crystal (HDNV)) in the housing (GH) depends on the alignment orientation, preferably corresponds to the alignment orientation.

• ▪ Aussetzen des Kristalls (HDNV) einer magnetischen Flussdichte B, wobei diese magnetische Flussdichte B im Wesentlichen einer kennzeichnenden magnetischen Flussdichte B eines Fluoreszenzmerkmals entspricht;
• ▪ Beststrahlen des Kristalls (HDNV) mit Pumpstrahlung (LB) einer Pumpstrahlungswellenlänge (λ_pmp), die ggf. mit einer Modulation eines Modulationssignals (S5) moduliert ist;
• ▪ Erfassen der Fluoreszenzstrahlung (FL) einer Fluoreszenzstrahlungswellenlänge (λ_fl);
• ▪ Änderung der Ausrichtung des Kristalls (HDNV) mit Hilfe des Goniometers (MEMSG), bis ein Minimum des Fluoreszenzintensitätsmesswerts der Intensität der Fluoreszenzstrahlung (FL) und/oder ein Maximum des Fluoreszenzverzögerungsmesswerts der zeitlichen Verzögerung einer Modulation der Fluoreszenzstrahlung (FL) gegenüber einer Modulation der Pumpstrahlung (LB) oder der Modulation des Modulationssignals (S5) oder der Modulation eines daraus abgeleiteten Signals erreicht ist;
• ▪ Beenden der Ausrichtung des Kristalls (HDNV), wenn dieses Minimum des Fluoreszenzintensitätsmesswerts der Intensität der Fluoreszenzstrahlung (FL) und/oder ein Maximum des Fluoreszenzverzögerungsmesswerts der Verzögerung einer Modulation der Fluoreszenzstrahlung (FL) der zeitlichen Verzögerung einer Modulation der Fluoreszenzstrahlung (FL) gegenüber einer Modulation der Pumpstrahlung (LB) oder der Modulation des Modulationssignals (S5) oder der Modulation eines daraus abgeleiteten Signals erreicht ist und der Kristall (HDNV) dann ausgerichtet ist.

Feature 193: Method according to feature 192 with the steps

• ▪ exposing the crystal (HDNV) to a magnetic flux density B, this magnetic flux density B substantially corresponding to a characteristic magnetic flux density B of a fluorescent feature;
• ▪ Best radiation of the crystal (HDNV) with pump radiation (LB) of a pump radiation wavelength (λ _pmp ), which is optionally modulated with a modulation of a modulation signal (S5);
• ▪ detecting the fluorescence radiation (FL) of a fluorescence radiation wavelength (λ _fl );
• ▪ Changing the orientation of the crystal (HDNV) using the goniometer (MEMSG) until a minimum of the fluorescence intensity measurement of the intensity of the fluorescence radiation (FL) and/or a maximum of the fluorescence delay measurement of the time delay of a modulation of the fluorescence radiation (FL) compared to a modulation of the Pump radiation (LB) or the modulation of the modulation signal (S5) or the modulation of a signal derived therefrom is reached;
• ▪ Terminating the alignment of the crystal (HDNV) when this minimum of the fluorescence intensity measurement of the intensity of the fluorescence (FL) and/or a maximum of the fluorescence delay measurement of the delay of a modulation of the fluorescence (FL) of the time delay of a modulation of the fluorescence (FL) with respect to a Modulation of the pump radiation (LB) or the modulation of the modulation signal (S5) or the modulation of a signal derived therefrom is achieved and the crystal (HDNV) is then aligned.

Features XXVI (MEMS goniometer)

• ▪ wobei die Vorrichtung ein MEMS-Goniometer (MEMSG) umfasst und
• ▪ wobei die Vorrichtung einen Kristall (HDNV) umfasst und
• ▪ wobei das MEMS-Goniometer (MEMSG) einen Rahmen (RM) aus einem Rahmenmaterial aufweist und
• ▪ wobei das MEMS-Goniometer (MEMSG) einen oder mehrere erste Aktoren (CBDRV1x, CBDRV2x) aufweist und
• ▪ wobei das MEMS-Goniometer (MEMSG) einen drehbar um eine erste Achse (AXx) gelagerten ersten Drehkörper (Rx) aufweist und
• ▪ wobei der erste Drehkörper (Rx) mittels eines ersten Lagers oder einer ersten Feder (GR1x) der ersten Achse (AXx) und eines zweiten Lagers oder einer zweiten Feder (GR2x) der ersten Achse (AXx) mit dem Rahmen (RM) drehbar um die erste Achse (AXx) verbunden ist und
• ▪ wobei die ersten Aktoren (CBDRV1x, CBDRV1y) den ersten Drehkörper (Rx) gegenüber dem Rahmen (RM) um die erste Achse (AXx) verdrehen können und
• ▪ wobei der Kristall (HDNV) mit dem ersten Drehkörper (RX) mechanisch fest verbunden ist und
• ▪ wobei der Kristall ein oder mehrere paramagnetische Zentren und/oder ein oder mehrere Paare gekoppelter paramagnetischer Zentren und/oder ein oder mehrere Cluster paramagnetischer Zentren und/oder ein oder mehrere Cluster von Paaren gekoppelter paramagnetischer Zentren und/oder einen Diamanten und/oder einen HDNV-Diamantbereich, der die Merkmale eines HDNV-Diamanten aufweist, umfasst und
• ▪ wobei insbesondere die paramagnetischen Zentren an nukleare Spins von Atomen in der Umgebung paramagnetischer Zentren dieser paramagnetischen Zentren koppelbar sein können.

Feature 194: device for a quantum measurement system and/or quantum technological device or a quantum computer

• ▪ wherein the device comprises a MEMS goniometer (MEMSG) and
• ▪ wherein the device comprises a crystal (HDNV) and
• ▪ wherein the MEMS goniometer (MEMSG) has a frame (RM) made of a frame material and
• ▪ wherein the MEMS goniometer (MEMSG) has one or more first actuators (CBDRV1x, CBDRV2x) and
• ▪ wherein the MEMS goniometer (MEMSG) has a first rotating body (Rx) mounted rotatably about a first axis (AXx) and
• ▪ wherein the first rotary body (Rx) is rotatable with the frame (RM) by means of a first bearing or a first spring (GR1x) of the first axis (AXx) and a second bearing or a second spring (GR2x) of the first axis (AXx). the first axis (AXx) is connected and
• ▪ wherein the first actuators (CBDRV1x, CBDRV1y) can rotate the first rotary body (Rx) relative to the frame (RM) about the first axis (AXx) and
• ▪ whereby the crystal (HDNV) is mechanically fixed to the first rotary body (RX) and
• ▪ wherein the crystal has one or more paramagnetic centers and/or one or more pairs of coupled paramagnetic centers and/or one or more clusters of paramagnetic centers and/or one or more clusters of pairs of coupled paramagnetic centers and/or a diamond and/or a HDNV -A range of diamonds exhibiting the characteristics of an HDNV diamond, and
• ▪ where in particular the paramagnetic centers can be coupled to nuclear spins of atoms in the vicinity of paramagnetic centers of these paramagnetic centers.

• ▪ wobei der Kristall (HDNV) ein Diamantkristall ist und ▪ wobei der Kristall ein oder mehrere paramagnetische Zentren und/oder ein oder mehrere Paare gekoppelter paramagnetischer Zentren und/oder ein oder mehrere Cluster paramagnetischer Zentren und/oder ein oder mehrere Cluster von Paaren gekoppelter paramagnetischer Zentren und/oder einen Diamanten und/oder einen HDNV-Diamantbereich, der die Merkmale eines HDNV-Diamanten aufweist, umfasst und
• ▪ wobei insbesondere die paramagnetischen Zentren an nukleare Spins von Atomen in der Umgebung paramagnetischer Zentren dieser paramagnetischen Zentren koppelbar sein können und
• ▪ wobei eine oder mehrere paramagnetische Zentren NV-Zentren und/oder ST1-Zentren und/oder TR12-Zentren und/oder SiV-Zentren und/oder GeV-Zentren umfassen.

Feature 19S: Device according to feature 194

• ▪ wherein the crystal (HDNV) is a diamond crystal and ▪ wherein the crystal has one or more paramagnetic centers and/or one or more pairs of coupled paramagnetic centers and/or one or more clusters of paramagnetic centers and/or one or more clusters of pairs of coupled paramagnetic centers and/or a diamond and/or an HDNV diamond area exhibiting the characteristics of an HDNV diamond, and
• ▪ whereby in particular the paramagnetic centers can be coupled to nuclear spins of atoms in the vicinity of paramagnetic centers of these paramagnetic centers and
• ▪ wherein one or more paramagnetic centers comprise NV centers and/or ST1 centers and/or TR12 centers and/or SiV centers and/or GeV centers.

• ▪ wobei das MEMS-Goniometer einen oder mehrere zweite Aktoren (CBDRV1y, CBDRV2y) aufweist und
• ▪ wobei das MEMS-Goniometer einen drehbar um eine zweite Achse (AXx) gelagerten zweiten Drehkörper (Ry) aufweist und
• ▪ wobei der zweite Drehkörper (Ry) mittels eines ersten Lagers oder einer ersten Feder (GR1y) der zweiten Achse (AXy) und eines zweiten Lagers oder einer zweiten Feder (GR2y) der zweiten Achse (AXy) mit dem ersten Drehkörper (Rx) drehbar um die zweite Achse (AXy) verbunden ist und
• ▪ wobei die zweiten Aktoren (CBDRV1y, CBDRV2y) den zweiten Drehkörper (Ry) um die zweite Achse (AXy) gegenüber dem ersten Drehkörper (Rx) verdrehen können und
• ▪ wobei der Kristall (HDNV) mit zweiten Drehkörper (Ry) mechanisch fest verbunden ist und
• ▪ wobei der Kristall (HDNV) mit dem ersten Drehkörper (RX) über den zweiten Drehkörper (Ry) mechanisch fest verbunden ist und
• ▪ wobei der Kristall (HDNV) mit dem Rahmen (RM)über den ersten Drehkörper (RX) und über den zweiten Drehkörper (Ry) mechanisch fest verbunden ist.

Feature 196: Device according to one or more of features 194 to 195

• ▪ wherein the MEMS goniometer has one or more second actuators (CBDRV1y, CBDRV2y) and
• ▪ wherein the MEMS goniometer has a second rotating body (Ry) mounted rotatably about a second axis (AXx) and
• ▪ wherein the second rotating body (Ry) is rotatable with the first rotating body (Rx) by means of a first bearing or a first spring (GR1y) of the second axis (AXy) and a second bearing or a second spring (GR2y) of the second axis (AXy). connected about the second axis (AXy) and
• ▪ whereby the second actuators (CBDRV1y, CBDRV2y) can rotate the second rotating body (Ry) about the second axis (AXy) in relation to the first rotating body (Rx) and
• ▪ whereby the crystal (HDNV) is mechanically fixed to the second rotary body (Ry) and
• ▪ wherein the crystal (HDNV) is mechanically fixed to the first rotating body (RX) via the second rotating body (Ry) and
• ▪ whereby the crystal (HDNV) is mechanically firmly connected to the frame (RM) via the first rotating body (RX) and via the second rotating body (Ry).

• ▪ wobei das MEMS-Goniometer einen oder mehrere dritte Aktoren (CBDRV1z, CBDRV2z) aufweist und
• ▪ wobei das MEMS-Goniometer einen drehbar um eine dritte Achse (AXz) gelagerten dritten Drehkörper (Rz) aufweist und
• ▪ wobei der dritte Drehkörper (Rz) mittels eines ersten Lagers oder einer ersten Feder (GR1z) der dritten Achse (AXz) und eines zweiten Lagers oder einer zweiten Feder (GR2z) der dritten Achse (AXz) mit dem zweiten Drehkörper (Ry) drehbar um die dritte Achse (AXz) verbunden ist und
• ▪ wobei die dritten Aktoren (CBDRV1z, CBDRV2z) den dritten Drehkörper (Rz) um die dritte Achse (AXz) gegenüber dem den zweiten Drehkörper (Ry) um die dritte Achse (AXz) verdrehen können und
• ▪ wobei der Kristall (HDNV) mit dritten Drehkörper (Rz) mechanisch fest verbunden ist und
• ▪ wobei der Kristall (HDNV) mit dem zweiten Drehkörper (Ry) und über den dritten Drehkörper (Rz) mechanisch fest verbunden ist und
• ▪ wobei der Kristall (HDNV) mit dem ersten Drehkörper (RX) über den zweiten Drehkörper (Ry) über den dritten Drehkörper (Rz) mechanisch fest verbunden ist und
• ▪ wobei der Kristall (HDNV) mit dem Rahmen (RM)über den ersten Drehkörper (RX) und über den zweiten Drehkörper (Ry) und über den dritten Drehkörper (Rz) mechanisch fest verbunden ist.

Feature 197: Device according to one or more of features 194 to 196

• ▪ wherein the MEMS goniometer has one or more third actuators (CBDRV1z, CBDRV2z) and
• ▪ wherein the MEMS goniometer has a third rotating body (Rz) mounted rotatably about a third axis (AXz) and
• ▪ wherein the third rotating body (Rz) is rotatable with the second rotating body (Ry) by means of a first bearing or a first spring (GR1z) of the third axis (AXz) and a second bearing or a second spring (GR2z) of the third axis (AXz). connected about the third axis (AXz) and
• ▪ whereby the third actuators (CBDRV1z, CBDRV2z) can rotate the third rotary body (Rz) about the third axis (AXz) in relation to the second rotary body (Ry) about the third axis (AXz) and
• ▪ whereby the crystal (HDNV) is mechanically fixed to the third rotary body (Rz) and
• ▪ whereby the crystal (HDNV) is mechanically firmly connected to the second rotating body (Ry) and via the third rotating body (Rz) and
• ▪ wherein the crystal (HDNV) is mechanically firmly connected to the first rotating body (RX) via the second rotating body (Ry) via the third rotating body (Rz) and
• ▪ whereby the crystal (HDNV) is mechanically fixed to the frame (RM) via the first rotating body (RX) and via the second rotating body (Ry) and via the third rotating body (Rz).

Features XXVII (magnetic field sensor with flux density control on fluorescence feature)

• ▪ mit einem Kristall (HDNV) und
• ▪ mit einem Wellenformgenerator (WFG) und
• ▪ mit einer Treibervorrichtung (LDDRV) und
• ▪ mit einer Pumpstrahlungsquelle (LD) und
• ▪ mit einem Fotodetektor (PD) und
• ▪ mit einer Auswertevorrichtung (AMP, LIA) und
• ▪ mit einem Regler (RG) und
• ▪ mit magnetfelderzeugenden Strukturen (MG) und/oder
• ▪ mit einer oder mehrerer Magnetfeldgeneratorspulen (MGx, MGy, MGz) für die Erzeugung einer magnetischen Flussdichte B,
• ▪ wobei der Kristall ein oder mehrere paramagnetische Zentren und/oder ein oder mehrere Paare gekoppelter paramagnetischer Zentren und/oder ein oder mehrere Cluster paramagnetischer Zentren und/oder ein oder mehrere Cluster von Paaren gekoppelter paramagnetischer Zentren und/oder einen Diamanten und/oder einen HDNV-Diamantbereich, der die Merkmale eines HDNV-Diamanten aufweist, umfasst und
• ▪ wobei insbesondere die paramagnetischen Zentren an nukleare Spins von Atomen in der Umgebung paramagnetischer Zentren dieser paramagnetischen Zentren koppelbar sein können und
• ▪ wobei der Kristall Diamant umfassen kann und wobei paramagnetische Zentren NV-Zentren und/oder SiV-Zentren und/oder GeV-Zentren und/oder ST1-Zentren und/oder TR12-Zentren umfassen können und
• ▪ wobei der Wellenformgenerator (WFG) ein Modulationssignal (S5) mit einer zeitlichen Modulation erzeugt und
• ▪ wobei die Treibervorrichtung (LDDRV) die Pumpstrahlungsquelle (LD) in Abhängigkeit von dem Modulationssignal (S5) mit elektrischer Energie versorgt und
• ▪ wobei die Pumpstrahlungsquelle (LD) den Kristall (HDNV) mit Pumpstrahlung (LB) mit einer Pumpstrahlungswellenlänge (λ_pmp) bestrahlt und
• ▪ wobei der Kristall (HDNV) in Abhängigkeit von der Pumpstrahlung (LB) Fluoreszenzstrahlung (FL) mit einer Fluoreszenzstrahlungswellenlänge (λ_fl) emittiert und
• ▪ wobei die Fluoreszenzstrahlung (FL) von einem physikalischen Parameter am Ort des Kristalls (HDNV) abhängen kann und
• ▪ wobei die Fluoreszenzstrahlung (FL) von der Stärke der magnetischen Flussdichte B am Ort des Kristalls (HDNV) abhängt und
• ▪ wobei die Fluoreszenzstrahlung (FL) von der Ausrichtung des Kristalls (HDNV) relativ zur Richtung der magnetischen Flussdichte B abhängt und
• ▪ wobei der Kristall (HDNV) gegenüber der Richtung der magnetischen Flussdichte so ausgerichtet ist, dass seine Fluoreszenzintensitätskurve der Intensität der Fluoreszenzstrahlung (FL) in Abhängigkeit von dem Wert der magnetischen Flussdichte B und/oder seine Fluoreszenzverzögerungskurve der zeitlichen Verzögerung der Modulation der Intensität der Fluoreszenzstrahlung (FL) gegenüber der zeitlichen Modulation der Intensität der Pumpstrahlung (LB) oder gegenüber der zeitlichen Modulation des Modulationssignals oder eines daraus abgeleiteten Signals in Abhängigkeit von dem Wert der magnetischen Flussdichte B ein Fluoreszenzmerkmal zeigt und
• ▪ wobei der Fotodetektor (PD) zumindest einen Teil der Fluoreszenzstrahlung (FL) in ein Empfangssignal (S0) wandelt und
• ▪ wobei die Auswertevorrichtung (AMP, LIA) einen Wert oder zeitlichen Werteverlauf aus dem Empfangssignal (S0) bildet und
• ▪ wobei der Regler (RG) in Abhängigkeit von dem Wert oder zeitlichen Werteverlauf, den die Auswertevorrichtung bildet, die magnetfelderzeugenden Strukturen (MG) und/oder die eine Magnetfeldgeneratorspule oder die mehreren Magnetfeldgeneratorspulen (MGx, MGy, MGz) für die Erzeugung einer magnetischen Flussdichte B mittels eines Regelsignals so steuert, dass sie eine magnetische Gesamtflussdichte B am Ort des Kristalls mittels Überlagerung so erzeugen, dass die magnetische Flussdichte B am Ort des Kristalls (HDNV) der kennzeichnenden magnetischen Flussdichte B eines Fluoreszenzmerkmals entspricht, und
• ▪ wobei das Sensorsystem das Regelsignal oder ein aus dem Regelsignal abgeleitetes Signal oder ein Signal, aus dem das Regelsignal abgeleitet ist, als Meswertsignal verwendet und
• ▪ wobei das Sensorsystem zumindest einen Wert des Messwertsignals ausgibt oder bereithält.

Feature 198: sensor system

• ▪ with a crystal (HDNV) and
• ▪ with a waveform generator (WFG) and
• ▪ with a driver device (LDDRV) and
• ▪ with a pump radiation source (LD) and
• ▪ with a photodetector (PD) and
• ▪ with an evaluation device (AMP, LIA) and
• ▪ with a controller (RG) and
• ▪ with magnetic field generating structures (MG) and/or
• ▪ with one or more magnetic field generator coils (MGx, MGy, MGz) for generating a magnetic flux density B,
• ▪ wherein the crystal has one or more paramagnetic centers and/or one or more pairs of coupled paramagnetic centers and/or one or more clusters of paramagnetic centers and/or one or more clusters of pairs of coupled paramagnetic centers and/or a diamond and/or a HDNV -A range of diamonds exhibiting the characteristics of an HDNV diamond, and
• ▪ whereby in particular the paramagnetic centers can be coupled to nuclear spins of atoms in the vicinity of paramagnetic centers of these paramagnetic centers and
• ▪ wherein the crystal may comprise diamond and wherein paramagnetic centers may comprise NV centers and/or SiV centers and/or GeV centers and/or ST1 centers and/or TR12 centers and
• ▪ wherein the waveform generator (WFG) generates a modulation signal (S5) with a temporal modulation and
• ▪ wherein the driver device (LDDRV) supplies the pump radiation source (LD) with electrical energy as a function of the modulation signal (S5) and
• ▪ wherein the pump radiation source (LD) irradiates the crystal (HDNV) with pump radiation (LB) with a pump radiation wavelength (λ _pmp ) and
• ▪ wherein the crystal (HDNV) emits fluorescence radiation (FL) with a fluorescence radiation wavelength (λ _fl ) depending on the pump radiation (LB) and
• ▪ where the fluorescence radiation (FL) can depend on a physical parameter at the location of the crystal (HDNV) and
• ▪ where the fluorescence radiation (FL) depends on the strength of the magnetic flux density B at the location of the crystal (HDNV) and
• ▪ where the fluorescence radiation (FL) depends on the orientation of the crystal (HDNV) relative to the direction of the magnetic flux density B and
• ▪ wherein the crystal (HDNV) is oriented with respect to the direction of the magnetic flux density in such a way that its fluorescence intensity curve represents the intensity of the fluorescence radiation (FL) as a function of the value of the magnetic flux density B and/or its fluorescence delay curve represents the time delay of the modulation of the intensity of the fluorescence radiation (FL) exhibits a fluorescence characteristic versus the temporal modulation of the intensity of the pump radiation (LB) or versus the temporal modulation of the modulation signal or a signal derived therefrom as a function of the value of the magnetic flux density B and
• ▪ wherein the photodetector (PD) converts at least part of the fluorescence radiation (FL) into a received signal (S0) and
• ▪ wherein the evaluation device (AMP, LIA) forms a value or a time course of values from the received signal (S0) and
• ▪ the controller (RG) depending on the value or value curve over time, which the evaluation device forms, the magnetic field generating structures (MG) and/or the one magnetic field generator coil or the several magnetic field generator coils (MGx, MGy, MGz) for the generation of a magnetic flux density B by means of a control signal so that they generate a total magnetic flux density B at the crystal site by means of superposition such that the magnetic flux density B at the crystal site (HDNV) corresponds to the characteristic magnetic flux density B of a fluorescent feature, and
• ▪ the sensor system using the control signal or a signal derived from the control signal or a signal from which the control signal is derived as the measured value signal and
• ▪ wherein the sensor system outputs or provides at least one value of the measured value signal.

• ▪ wobei die Fluoreszenzintensitätskurve bzw. die Fluoreszenzverzögerungskurve zumindest ein Hauptfluoreszenzmerkmal als Fluoreszenzmerkmal aufweist und
• ▪ wobei der Kristall (HDNV) Isotope, insbesondere ¹³C-Isotope (¹³C) umfasst und
• ▪ wobei die Isotope (¹³C) einen Kernspin mit einem magnetischen Moment µ aufweisen und
• ▪ wobei diese Isotope (¹³C) so mit den paramagnetischen Zentren des Kristalls zusammenwirken, dass die Wechselwirkung der Isotope (¹³C) mit den paramagnetischen Zentren zu der Ausbildung von Nebenfluoreszenzmerkmalen führt und
• ▪ wobei das Sensorsystem zumindest zeitweise eines der Nebenfluoreszenzmerkmale als Fluoreszenzmerkmal nutzt.

Feature 199: Sensor system according to feature 198

• ▪ wherein the fluorescence intensity curve or the fluorescence delay curve has at least one main fluorescence feature as a fluorescence feature and
• ▪ wherein the crystal (HDNV) comprises isotopes, in particular ¹³ C isotopes ( ¹³ C) and
• ▪ where the isotopes ( ¹³ C) have a nuclear spin with a magnetic moment µ and
• ▪ these isotopes ( ¹³ C) interacting with the paramagnetic centers of the crystal in such a way that the interaction of the isotopes ( ¹³ C) with the paramagnetic centers leads to the formation of secondary fluorescent features and
• ▪ wherein the sensor system at least temporarily uses one of the secondary fluorescence features as a fluorescence feature.

Features XXVIII (magnetic field sensor with alignment control on fluorescence feature)

• ▪ mit einem Kristall (HDNV) und
• ▪ mit einem Wellenformgenerator (WFG) und
• ▪ mit einer Treibervorrichtung (LDDRV) und
• ▪ mit einer Pumpstrahlungsquelle (LD) und
• ▪ mit einem Fotodetektor (PD) und
• ▪ mit einer Auswertevorrichtung (AMP, LIA) und ▪ mit einem Regler (RG) und
• ▪ mit magnetfelderzeugenden Strukturen (MG) und/oder
• ▪ mit einer oder mehrerer Magnetfeldgeneratorspulen (MGx, MGy, MGz) für die Erzeugung einer magnetischen Flussdichte B und
• ▪ mit einer Ausrichtvorrichtung (MEMSG),
• ▪ wobei der Kristall ein oder mehrere paramagnetische Zentren und/oder ein oder mehrere Paare gekoppelter paramagnetischer Zentren und/oder ein oder mehrere Cluster paramagnetischer Zentren und/oder ein oder mehrere Cluster von Paaren gekoppelter paramagnetischer Zentren und/oder einen Diamanten und/oder einen HDNV-Diamantbereich, der die Merkmale eines HDNV-Diamanten aufweist, umfasst und
• ▪ wobei insbesondere die paramagnetischen Zentren an nukleare Spins von Atomen in der Umgebung paramagnetischer Zentren dieser paramagnetischen Zentren koppelbar sein können und
• ▪ wobei paramagnetische Zentren NV-Zentren und/oder SiV-Zentren und/oder GeV-Zentren und/oder ST1-Zentren und/oder TR12-Zentren umfassen können und
• ▪ wobei der Wellenformgenerator (WFG) ein Modulationssignal (S5) mit einer zeitlichen Modulation erzeugt und
• ▪ wobei die Treibervorrichtung (LDDRV) die Pumpstrahlungsquelle (LD) in Abhängigkeit von dem Modulationssignal (S5) mit elektrischer Energie versorgt und
• ▪ wobei die Pumpstrahlungsquelle (LD) den Kristall (HDNV) mit Pumpstrahlung (LB) mit einer Pumpstrahlungswellenlänge (λ_pmp) bestrahlt und
• ▪ wobei der Kristall (HDNV) in Abhängigkeit von der Pumpstrahlung (LB) Fluoreszenzstrahlung (FL) mit einer Fluoreszenzstrahlungswellenlänge (λ_fl) emittiert und
• ▪ wobei die Fluoreszenzstrahlung (FL) von einem physikalischen Parameter am Ort des Kristalls (HDNV) abhängen kann und
• ▪ wobei die Fluoreszenzstrahlung (FL) von der Stärke der magnetischen Flussdichte B am Ort des Kristalls (HDNV) abhängt und
• ▪ wobei die Fluoreszenzstrahlung (FL) von der Ausrichtung des Kristalls (HDNV) relativ zur Richtung der magnetischen Flussdichte B abhängt und
• ▪ wobei der Kristall (HDNV) gegenüber der Richtung der magnetischen Flussdichte so ausgerichtet ist, dass seine Fluoreszenzintensitätskurve der Intensität der Fluoreszenzstrahlung (FL) in Abhängigkeit von dem Wert der magnetischen Flussdichte B und/oder seine Fluoreszenzverzögerungskurve der zeitlichen Verzögerung der Modulation der Intensität der Fluoreszenzstrahlung (FL) gegenüber der zeitlichen Modulation der Intensität der Pumpstrahlung (LB) oder gegenüber der zeitlichen Modulation des Modulationssignals (S5) oder eines daraus abgeleiteten Signals in Abhängigkeit von dem Wert der magnetischen Flussdichte B ein Fluoreszenzmerkmal zeigt und
• ▪ wobei der Fotodetektor (PD) zumindest einen Teil der Fluoreszenzstrahlung (FL) in ein Empfangssignal (S0) wandelt und
• ▪ wobei die Auswertevorrichtung (AMP, LIA) einen Wert oder zeitlichen Werteverlauf aus dem Empfangssignal (S0) bildet und
• ▪ wobei die magnetfelderzeugenden Strukturen (MG) und/oder die eine Magnetfeldgeneratorspule oder die mehreren Magnetfeldgeneratorspulen (MGx, MGy, MGz) eine magnetische Flussdichte B am Ort des Kristalls mittels Überlagerung so erzeugen, dass die magnetische Gesamtflussdichte B am Ort des Kristalls (HDNV) der kennzeichnenden magnetischen Flussdichte B eines Fluoreszenzmerkmals entspricht und
• ▪ wobei der Regler (RG) in Abhängigkeit von dem Wert oder zeitlichen Werteverlauf, den die Auswertevorrichtung bildet, die die Ausrichtvorrichtung (MEMSG) mittels eines oder mehrerer Regelsignale so steuert, dass die Richtung der magnetische Flussdichte B am Ort des Kristalls (HDNV) so gegenüber der Richtung der paramagnetischen Zentren orientiert ist, dass die Fluoreszenzintensitätskurve und/oder die Fluoreszenzverzögerungskurve ein Fluoreszenzmerkmal, bevorzugt extremal, ausprägen und
• ▪ wobei der Regler (RG) bei Änderungen der Orientierung des Magnetfelds die Ausrichtvorrichtung (MEMSG) so steuert, dass die Ausrichtvorrichtung (MEMSG) so nachsteuert, dass diese den Kristall (HDNV) so neu orientiert, dass dessen ursprüngliche Ausrichtung gegenüber der Richtung der magnetischen Flussdichte B des Magnetfelds sich im Wesentlichen wieder einstellt und
• ▪ wobei das Sensorsystem das Regelsignal bzw. die Regelsignals oder ein aus dem Regelsignal abgeleitetes Signal bzw. aus den Regelsignalen abgeleitete Signale oder ein Signal, aus dem das Regelsignal abgeleitet ist, bzw. Signale, aus denen die Regelsignale abgeleitet sind, als Meswertsignal bzw. Messwertsignale verwendet und
• ▪ wobei das Sensorsystem zumindest einen Wert des Messwertsignals bzw. zumindest je einen Wert der jeweiligen Messwertsignale ausgibt oder bereithält.

Feature 200: sensor system

• ▪ with a crystal (HDNV) and
• ▪ with a waveform generator (WFG) and
• ▪ with a driver device (LDDRV) and
• ▪ with a pump radiation source (LD) and
• ▪ with a photodetector (PD) and
• ▪ with an evaluation device (AMP, LIA) and ▪ with a controller (RG) and
• ▪ with magnetic field generating structures (MG) and/or
• ▪ with one or more magnetic field generator coils (MGx, MGy, MGz) for generating a magnetic flux density B and
• ▪ with an alignment device (MEMSG),
• ▪ wherein the crystal has one or more paramagnetic centers and/or one or more pairs of coupled paramagnetic centers and/or one or more clusters of paramagnetic centers and/or one or more clusters of pairs of coupled paramagnetic centers and/or a diamond and/or a HDNV -A range of diamonds exhibiting the characteristics of an HDNV diamond, and
• ▪ whereby in particular the paramagnetic centers can be coupled to nuclear spins of atoms in the vicinity of paramagnetic centers of these paramagnetic centers and
• ▪ wherein paramagnetic centers may include NV centers and/or SiV centers and/or GeV centers and/or ST1 centers and/or TR12 centers and
• ▪ wherein the waveform generator (WFG) generates a modulation signal (S5) with a temporal modulation and
• ▪ wherein the driver device (LDDRV) supplies the pump radiation source (LD) with electrical energy as a function of the modulation signal (S5) and
• ▪ wherein the pump radiation source (LD) irradiates the crystal (HDNV) with pump radiation (LB) with a pump radiation wavelength (λ _pmp ) and
• ▪ wherein the crystal (HDNV) emits fluorescence radiation (FL) with a fluorescence radiation wavelength (λ _fl ) depending on the pump radiation (LB) and
• ▪ where the fluorescence radiation (FL) can depend on a physical parameter at the location of the crystal (HDNV) and
• ▪ where the fluorescence radiation (FL) depends on the strength of the magnetic flux density B at the location of the crystal (HDNV) and
• ▪ where the fluorescence radiation (FL) depends on the orientation of the crystal (HDNV) relative to the direction of the magnetic flux density B and
• ▪ wherein the crystal (HDNV) is oriented with respect to the direction of the magnetic flux density in such a way that its fluorescence intensity curve represents the intensity of the fluorescence radiation (FL) as a function of the value of the magnetic flux density B and/or its fluorescence delay curve represents the time delay of the modulation of the intensity of the fluorescence radiation (FL) exhibits a fluorescence characteristic versus the temporal modulation of the intensity of the pump radiation (LB) or versus the temporal modulation of the modulation signal (S5) or a signal derived therefrom as a function of the value of the magnetic flux density B and
• ▪ wherein the photodetector (PD) converts at least part of the fluorescence radiation (FL) into a received signal (S0) and
• ▪ wherein the evaluation device (AMP, LIA) forms a value or a time course of values from the received signal (S0) and
• ▪ where the magnetic field generating structures (MG) and/or the one magnetic field generator coil or the several magnetic field generator coils (MGx, MGy, MGz) generate a magnetic flux density B at the location of the crystal by means of superposition such that the total magnetic flux density B at the location of the crystal (HDNV) corresponds to the characteristic magnetic flux density B of a fluorescent feature and
• ▪ where the controller (RG) is dependent on the value or value profile over time that the evaluation device forms, which controls the alignment device (MEMSG) by means of one or more control signals in such a way that the direction of the magnetic flux density B at the location of the crystal (HDNV) is such is oriented in relation to the direction of the paramagnetic centers, that the fluorescence intensity curve and/or the fluorescence delay curve express a fluorescence feature, preferably extremal, and
• ▪ where the controller (RG) controls the alignment device (MEMSG) in the event of changes in the orientation of the magnetic field in such a way that the alignment device (MEMSG) adjusts in such a way that it reorients the crystal (HDNV) in such a way that its original alignment with respect to the direction of the magnetic Flux density B of the magnetic field is essentially restored and
• ▪ whereby the sensor system transmits the control signal or the control signals or a signal derived from the control signal or signals derived from the control signals or a signal from which the control signal is derived or signals from which the control signals are derived as a measured value signal or Measurement signals used and
• ▪ wherein the sensor system outputs or provides at least one value of the measured value signal or at least one value each of the respective measured value signals.

• ▪ wobei die Fluoreszenzintensitätskurve zumindest ein Hauptfluoreszenzmerkmal als Fluoreszenzmerkmal aufweist und
• ▪ wobei der Kristall (HDNV) Isotope, insbesondere ¹³C-Isotope (¹³C) umfasst und
• ▪ wobei die Isotope (¹³C) einen Kernspin mit einem magnetischen Moment µ aufweisen und
• ▪ wobei diese Isotope (¹³C) so mit den paramagnetischen Zentren des Kristalls zusammenwirken, dass die Wechselwirkung der Isotope (¹³C) mit den paramagnetischen Zentren zu der Ausbildung von Nebenfluoreszenzmerkmalen führt und
• ▪ wobei das Sensorsystem zumindest zeitweise eines der Nebenfluoreszenzmerkmale als Fluoreszenzmerkmal nutzt.

Feature 201: Sensor system according to feature 200

• ▪ wherein the fluorescence intensity curve has at least one main fluorescence feature as a fluorescence feature and
• ▪ wherein the crystal (HDNV) comprises isotopes, in particular ¹³ C isotopes ( ¹³ C) and
• ▪ where the isotopes ( ¹³ C) have a nuclear spin with a magnetic moment µ and
• ▪ these isotopes ( ¹³ C) interacting with the paramagnetic centers of the crystal in such a way that the interaction of the isotopes ( ¹³ C) with the paramagnetic centers leads to the formation of secondary fluorescent features and
• ▪ wherein the sensor system at least temporarily uses one of the secondary fluorescence features as a fluorescence feature.

Features XXIX (magnetic field sensor)

• ▪ mit einem konventionellen Magnetfeldsensor
• ▪ mit einer Quantenvorrichtung und
• ▪ mit einem Speicher (NVM, RAM) und
• ▪ mit einem Rechnerkern (CPU) und
• ▪ wobei der konventionelle Magnetfeldsensor einen Hall-Sensor oder einen GMR-Sensor oder einen AMR-Sensor oder einen CMR-Sensor oder einen anderer XMR-Sensor umfasst oder einen Ouantensensor entsprechend der technischen Lehre der WO 2021 151 429 A2 und/oder der WO 2021 013 308 A1 und/oder der WO 2020 089 465 A2 und/oder der WO 2021 089 091 A1 umfasst und
• ▪ wobei der Quantenvorrichtung einen Diamanten (HDNV), insbesondere einen HD-NV-Diamanten, umfasst und
• ▪ wobei der Diamant (HDNV) bei Bestrahlung mit einer Pumpstrahlung (LB) einer Pumpstrahlungswellenlänge (λ_pmp) eine Fluoreszenzstrahlung (FL) mit einer Fluoreszenzstrahlungswellenlänge (λ_fl) emittiert und
• ▪ wobei die Fluoreszenzintensitätskurve der Intensität der Fluoreszenzstrahlung (FL) des Diamanten (HDNV) in Abhängigkeit von der magnetischen Flussdichte B zumindest n Fluoreszenzmerkmale mit n größer 2 aufweist und
• ▪ wobei der konventionelle Magnetfeldsensor Magnetfeldsensormesswerte für die magnetische Flussdichte B am Ort des Sensorsystems ermittelt
• ▪ wobei der Speicher (NVM, RAM) Magnetfeldsensorkorrekturparameter beinhaltet und
• ▪ wobei die Magnetfeldsensorkorrekturparameter mit Hilfe der Quantenvorrichtung bei magnetischen Flussdichten B ermittelt wurden, die der magnetischen Flussdichte B der n Fluoreszenzmerkmale des Diamanten entsprechen, und
• ▪ wobei das Sensorsystem die Magnetfeldsensormesswerte zur korrigierten Magnetfeldsensormesswerten mit Hilfe der Magnetfeldsensorkorrekturparameter wandelt.

Feature 202: sensor system

• ▪ with a conventional magnetic field sensor
• ▪ with a quantum device and
• ▪ with a memory (NVM, RAM) and
• ▪ with a computer core (CPU) and
• ▪ wherein the conventional magnetic field sensor comprises a Hall sensor or a GMR sensor or an AMR sensor or a CMR sensor or another XMR sensor or a quantum sensor according to the technical teaching of WO 2021 151 429 A2 and/or the WO 2021 013 308 A1 and/or WO 2020 089 465 A2 and/or the WO 2021 089 091 A1 includes and
• ▪ wherein the quantum device comprises a diamond (HDNV), in particular a HD-NV diamond, and
• ▪ wherein the diamond (HDNV) emits fluorescence radiation (FL) with a fluorescence radiation wavelength (λ _fl ) when irradiated with a pump radiation (LB) of a pump radiation wavelength (λ _pmp ) and
• ▪ wherein the fluorescence intensity curve of the intensity of the fluorescence radiation (FL) of the diamond (HDNV) as a function of the magnetic flux density B has at least n fluorescence features with n greater than 2 and
• ▪ whereby the conventional magnetic field sensor determines magnetic field sensor measurement values for the magnetic flux density B at the location of the sensor system
• ▪ wherein the memory (NVM, RAM) contains magnetic field sensor correction parameters and
• ▪ wherein the magnetic field sensor correction parameters were determined using the quantum device at magnetic flux densities B corresponding to the magnetic flux density B of the n fluorescence features of the diamond, and
• ▪ wherein the sensor system converts the magnetic field sensor readings to the corrected magnetic field sensor readings using the magnetic field sensor correction parameters.

• ▪ wobei die Magnetfeldsensorvorrichtung zumindest ein Sensorelement eines konventionellen Magnetfeldsensors umfasst und
• ▪ wobei der konventionelle Magnetfeldsensor ein Hall-Sensor oder ein GMR-Sensor oder ein AMR-Sensor oder ein CMR-Sensor oder ein anderer XMR-Sensor ist und
• ▪ wobei das Sensorelement der Vorrichtungsteil des konventionellen Magnetfeldsensors ist, der einen Parameter des magnetischen Feldes, insbesondere die magnetische Flussdichte B, in ein elektrisches Signal wandelt, und
• ▪ wobei die Magnetfeldsensorvorrichtung zumindest einen Diamanten mit zumindest einem paramagnetischen Zentrum umfasst und
• ▪ wobei die Magnetfeldsensorvorrichtung Messwerte, die die Magnetfeldsensorvorrichtung mittels des Sensorelements ermittelt, mit Hilfe von Messwerten, die zum Ersten mit Hilfe des Sensorelements und zum Zweiten gleichzeitig mit Hilfe der Fluoreszenzstrahlung (FL) der paramagnetischen Zentren gewonnen wurden oder werden, korrigiert.

Feature 203: magnetic field sensor device,

• ▪ wherein the magnetic field sensor device comprises at least one sensor element of a conventional magnetic field sensor and
• ▪ wherein the conventional magnetic field sensor is a Hall sensor or a GMR sensor or an AMR sensor or a CMR sensor or another XMR sensor and
• ▪ wherein the sensor element is the device part of the conventional magnetic field sensor, which converts a parameter of the magnetic field, in particular the magnetic flux density B, into an electrical signal, and
• ▪ wherein the magnetic field sensor device comprises at least one diamond with at least one paramagnetic center and
• ▪ wherein the magnetic field sensor device corrects measured values that the magnetic field sensor device determines using the sensor element using measured values that were or are obtained firstly using the sensor element and secondly using the fluorescence radiation (FL) of the paramagnetic centers.

• ▪ wobei die Intensität der Fluoreszenzstrahlung (FL) des Diamanten in Abhängigkeit von der magnetischen Flussdichte B einer Fluoreszenzintensitätskurve folgt und
• ▪ wobei die Fluoreszenzintensitätskurve Fluoreszenzmerkmale aufweist und
• ▪ wobei die Magnetfeldsensorvorrichtung Messwerte, die die Magnetfeldsensorvorrichtung mittels des Sensorelements ermittelt, mit Hilfe von solchen Messwerten, die zum Ersten mit Hilfe der Sensorelements und zum Zweiten gleichzeitig mit Hilfe der Fluoreszenzmerkmale gewonnen wurden oder werden, korrigiert.

Feature 204: Magnetic field sensor device according to feature 203

• ▪ where the intensity of the fluorescence radiation (FL) of the diamond as a function of the magnetic flux density B follows a fluorescence intensity curve and
• ▪ wherein the fluorescence intensity curve has fluorescence features and
• ▪ wherein the magnetic field sensor device corrects measured values that the magnetic field sensor device determines using the sensor element using such measured values that were or are obtained firstly using the sensor element and secondly simultaneously using the fluorescence features.

• ▪ wobei die zeitliche Verzögerung der Modulation der Intensität der Fluoreszenzstrahlung (FL) des Diamanten (HDNV) gegenüber der Modulation der Pumpstrahlung (LB), die den Diamanten (HDNV) bestrahlt oder einer Modulation eines Modulationssignals (S5) oder eines daraus abgeleiteten Signals in Abhängigkeit von der magnetischen Flussdichte B einer Fluoreszenzintensitätsverzögerungskurve folgt und
• ▪ wobei die Fluoreszenzintensitätsverzögerungskurve Fluoreszenzmerkmale aufweist und
• ▪ wobei die Magnetfeldsensorvorrichtung Messwerte, die die Magnetfeldsensorvorrichtung mittels des Sensorelements ermittelt, mit Hilfe von solchen Messwerten, die zum Ersten mit Hilfe der Sensorelements und zum Zweiten gleichzeitig mit Hilfe der Fluoreszenzmerkmale gewonnen wurden oder werden, korrigiert.

Feature 205: Magnetic field sensor device according to feature 203 or 204

• ▪ where the time delay of the modulation of the intensity of the fluorescence radiation (FL) of the diamond (HDNV) depends on the modulation of the pump radiation (LB) that irradiates the diamond (HDNV) or a modulation of a modulation signal (S5) or a signal derived therefrom of the magnetic flux density B follows a fluorescence intensity delay curve and
• ▪ wherein the fluorescence intensity delay curve has fluorescence features and
• ▪ wherein the magnetic field sensor device corrects measured values that the magnetic field sensor device determines using the sensor element using such measured values that were or are obtained firstly using the sensor element and secondly simultaneously using the fluorescence features.

• ▪ wobei die Magnetfeldsensorvorrichtung zumindest ein Sensorelement eines konventionellen Magnetfeldsensors umfasst und
• ▪ wobei der konventionelle Magnetfeldsensor ein Hall-Sensor oder ein GMR-Sensor oder ein AMR-Sensor oder ein CMR-Sensor oder ein anderer XMR-Sensor ist und
• ▪ wobei das Sensorelement der Vorrichtungsteil des konventionellen Magnetfeldsensors ist, der einen Parameter des magnetischen Feldes, insbesondere die magnetische Flussdichte B, in ein elektrisches Signal wandelt, und
• ▪ wobei die Magnetfeldsensorvorrichtung zumindest einen Diamanten (HDNV) mit zumindest einem paramagnetischen Zentrum umfasst und
• ▪ wobei der Diamant (HDNV) so zum Sensorelement angeordnet ist, dass das Verhältnis des Betrags der magnetischen Flussdichte B, die den Diamanten durchflutet, zum Betrag der magnetischen Flussdichte B, die den konventionellen Magnetfeldsensor durchflutet, fest oder vorbekannt oder im Wesentlichen gleich ist.

Feature 206: magnetic field sensor device,

• ▪ wherein the magnetic field sensor device comprises at least one sensor element of a conventional magnetic field sensor and
• ▪ wherein the conventional magnetic field sensor is a Hall sensor or a GMR sensor or an AMR sensor or a CMR sensor or another XMR sensor and
• ▪ wherein the sensor element is the device part of the conventional magnetic field sensor, which converts a parameter of the magnetic field, in particular the magnetic flux density B, into an electrical signal, and
• ▪ wherein the magnetic field sensor device comprises at least one diamond (HDNV) with at least one paramagnetic center and
• ▪ wherein the diamond (HDNV) is arranged in relation to the sensor element in such a way that the ratio of the magnitude of the magnetic flux density B flowing through the diamond to the magnitude of the magnetic flux density B flowing through the conventional magnetic field sensor is fixed or previously known or essentially the same.

Features XXX (Hall sensor)

• ▪ mit einem Hall-Sensor und
• ▪ mit einer Quantenvorrichtung und
• ▪ mit einem Speicher (NVM, RAM) und
• ▪ mit einem Rechnerkern (CPU) und
• ▪ wobei der Quantenvorrichtung einen Diamanten (HDNV), insbesondere einen HD-NV-Diamanten, umfasst und
• ▪ wobei der Diamant (HDNV) bei Bestrahlung mit einer Pumpstrahlung (LB) einer Pumpstrahlungswellenlänge (λ_pmp) eine Fluoreszenzstrahlung (FL) mit einer Fluoreszenzstrahlungswellenlänge (λ_fl) emittiert und
• ▪ wobei die Fluoreszenzintensitätskurve der Intensität der Fluoreszenzstrahlung (FL) des Diamanten (HDNV) in Abhängigkeit von der magnetischen Flussdichte B zumindest n Fluoreszenzmerkmale mit n größer 2 aufweist und
• ▪ wobei der Hallsensor Hallsensormesswerte für die magnetische Flussdichte B am Ort des Sensorsystems ermittelt
• ▪ wobei der Speicher (NVM, RAM) Hallsensorkorrekturparameter beinhaltet und
• ▪ wobei die Hallsensorkorrekturparameter mit Hilfe der Quantenvorrichtung bei magnetischen Flussdichten B ermittelt wurden, die der magnetischen Flussdichte B der n Fluoreszenzmerkmale des Diamanten entsprechen, und
• ▪ wobei das Sensorsystem die Hallsensormesswerte zur korrigierten Hallsensormesswerten mit Hilfe der Hallsensorkorrekturparameter wandelt.

Feature 207: sensor system

• ▪ with a Hall sensor and
• ▪ with a quantum device and
• ▪ with a memory (NVM, RAM) and
• ▪ with a computer core (CPU) and
• ▪ wherein the quantum device comprises a diamond (HDNV), in particular a HD-NV diamond, and
• ▪ wherein the diamond (HDNV) emits fluorescence radiation (FL) with a fluorescence radiation wavelength (λ _fl ) when irradiated with a pump radiation (LB) of a pump radiation wavelength (λ _pmp ) and
• ▪ wherein the fluorescence intensity curve of the intensity of the fluorescence radiation (FL) of the diamond (HDNV) as a function of the magnetic flux density B has at least n fluorescence features with n greater than 2 and
• ▪ where the Hall sensor determines Hall sensor measurement values for the magnetic flux density B at the location of the sensor system
• ▪ where the memory (NVM, RAM) contains Hall sensor correction parameters and
• ▪ wherein the Hall sensor correction parameters were determined using the quantum device at magnetic flux densities B corresponding to the magnetic flux density B of the n fluorescence features of the diamond, and
• ▪ wherein the sensor system converts the Hall sensor readings to the corrected Hall sensor readings using the Hall sensor correction parameters.

• ▪ wobei die Hallsensorvorrichtung zumindest eine Hall-Platte umfasst und
• ▪ wobei die Hallsensorvorrichtung zumindest einen Diamanten mit zumindest einem paramagnetischen Zentrum umfasst und
• ▪ wobei die Hallsensorvorrichtung Messwerte, die die Hallsensorvorrichtung mittels der Hallplatte ermittelt, mit Hilfe von Messwerten, die zum Ersten mit Hilfe der Hall-Platte und zum Zweiten gleichzeitig mit Hilfe der Fluoreszenzstrahlung der paramagnetischen Zentren gewonnen wurden oder werden, korrigiert.

Feature 208: Hall sensor device,

• ▪ wherein the Hall sensor device comprises at least one Hall plate and
• ▪ wherein the Hall sensor device comprises at least one diamond with at least one paramagnetic center and
• ▪ wherein the Hall sensor device corrects measured values that the Hall sensor device determines using the Hall plate using measured values that were or are obtained firstly using the Hall plate and secondly simultaneously using the fluorescence radiation of the paramagnetic centers.

• ▪ wobei die Intensität der Fluoreszenzstrahlung (FL) des Diamanten in Abhängigkeit von der magnetischen Flussdichte einer Fluoreszenzkurve folgt und
• ▪ wobei die Fluoreszenzkurve Fluoreszenzmerkmale aufweist und
• ▪ wobei die Hallsensorvorrichtung Messwerte, die die Hallsensorvorrichtung mittels der Hallplatte ermittelt, mit Hilfe von Messwerten, die zum Ersten mit Hilfe der Hall-Platte und zum Zweiten gleichzeitig mit Hilfe der Fluoreszenzmerkmale gewonnen wurden oder werden, korrigiert.

Feature 209: Hall sensor device according to feature 208

• ▪ where the intensity of the fluorescence radiation (FL) of the diamond follows a fluorescence curve as a function of the magnetic flux density and
• ▪ wherein the fluorescence curve has fluorescence features and
• ▪ wherein the Hall sensor device corrects measured values that the Hall sensor device determines using the Hall plate using measured values that were or are obtained firstly using the Hall plate and secondly simultaneously using the fluorescence features.

• ▪ wobei die Hallsensorvorrichtung zumindest eine Hall-Platte umfasst und
• ▪ wobei die Hallsensorvorrichtung zumindest einen Diamanten mit zumindest einem paramagnetischen Zentrum umfasst und
• ▪ wobei der Diamant so zur Hall-Platte angeordnet ist, dass das Verhältnis des Betrags der magnetischen Flussdichte, die den Diamanten durchflutet, zum Betrag der magnetischen Flussdichte, die die Hallsensorvorrichtung durchflutet, fest oder vorbekannt oder im Wesentlichen gleich ist.

Feature 210: Hall sensor device,

• ▪ wherein the Hall sensor device comprises at least one Hall plate and
• ▪ wherein the Hall sensor device comprises at least one diamond with at least one paramagnetic center and
• ▪ wherein the diamond is arranged relative to the Hall plate such that the ratio of the amount of magnetic flux density flowing through the diamond to the amount of magnetic flux density flowing through the Hall sensor device is fixed or known or substantially the same.

Features XXXI (Waveform Generator)

• ▪ mit einem Wellenformgenerator (WFG) und
• ▪ mit einer Atomuhr (ATC) und
• ▪ Wobei die Atomuhr (ATC) ein Referenzfrequenzsignal (RefSig) erzeugt und
• ▪ wobei der Wellenformgenerator (WFG) über eine Zeitbasis (TB) verfügt und
• ▪ wobei die Zeitbasis (TB) des Wellenformgenerators (WFG) mit dem Referenzfrequenzsignal (RefSig) synchronisiert ist und
• ▪ wobei der Wellenformgenerator (WFG) ein Modulationssignal (S5) in Abhängigkeit von der Zeitbasis (TB) und damit in Abhängigkeit von dem Referenzfrequenzsignal (RefSig)erzeugt und
• ▪ wobei das Modulationssignal (S5) oder ein daraus abgeleitetes Signal zur Ansteuerung zumindest eines Quantenpunkts oder paramagnetischen Zentrums dient.

Feature 211: waveform generator system

• ▪ with a waveform generator (WFG) and
• ▪ with an atomic clock (ATC) and
• ▪ The atomic clock (ATC) generates a reference frequency signal (RefSig) and
• ▪ where the waveform generator (WFG) has a time base (TB) and
• ▪ where the time base (TB) of the waveform generator (WFG) is synchronized with the reference frequency signal (RefSig) and
• ▪ wherein the waveform generator (WFG) generates a modulation signal (S5) depending on the time base (TB) and thus depending on the reference frequency signal (RefSig) and
• ▪ wherein the modulation signal (S5) or a signal derived therefrom is used to control at least one quantum dot or paramagnetic center.

• ▪ wobei die Zeitbasis (TB) einen Oszillator (OSZ) umfasst und
• ▪ wobei der Wellenformgenerator (WFG) einen ersten Teiler (DV1) umfasst und
• ▪ wobei die Zeitbasis (TB) einen zweiten Teiler (DV2) umfasst und
• ▪ wobei die Zeitbasis (TB) einen Regler (CTR) umfasst und
• ▪ wobei die Zeitbasis (TB) einen Phasendetektor (PHD) umfasst und
• ▪ wobei die Frequenz des Oszillators (OSZ) von dem Wert eines Steuersignals (STS) abhängt und
• ▪ wobei der Oszillator (OSZ) ein Frequenzsignal (FS) erzeugt und
• ▪ wobei der erste Teiler (DV1) aus dem Frequenzsignal (FS) ein geteiltes Frequenzsignal (DFS) erzeugt und
• ▪ wobei der zweite Teiler (DV1) aus dem Referenzfrequenzsignal (RefSig) ein geteiltes Referenzfrequenzsignal (DRefSig) erzeugt und
• ▪ wobei der Phasendetektor (PHD) das geteilte Frequenzsignal (DFS) mit dem geteilten Referenzfrequenzsignal (DRefSig) vergleicht und ein Phasendifferenzsignal (PHDS) erzeugt und
• ▪ wobei der Regler (CTR) aus dem Phasendifferenzsignal (PHDS) das Steuersignal (STS) erzeugt und
• ▪ wobei der Wellenformgenerator (WFG) in Abhängigkeit von dem Frequenzsignal (FS) das Modulationssignal (S5) erzeugt.

Feature 212: waveform generator system (WFG) according to feature 211

• ▪ where the time base (TB) includes an oscillator (OSZ) and
• ▪ wherein the waveform generator (WFG) comprises a first divider (DV1) and
• ▪ where the time base (TB) includes a second divider (DV2) and
• ▪ where the time base (TB) includes a controller (CTR) and
• ▪ wherein the time base (TB) comprises a phase detector (PHD) and
• ▪ where the frequency of the oscillator (OSZ) depends on the value of a control signal (STS) and
• ▪ whereby the oscillator (OSZ) generates a frequency signal (FS) and
• ▪ whereby the first divider (DV1) generates a divided frequency signal (DFS) from the frequency signal (FS) and
• ▪ whereby the second divider (DV1) generates a divided reference frequency signal (DRefSig) from the reference frequency signal (RefSig) and
• ▪ wherein the phase detector (PHD) compares the divided frequency signal (DFS) with the divided reference frequency signal (DRefSig) and generates a phase difference signal (PHDS), and
• ▪ whereby the controller (CTR) generates the control signal (STS) from the phase difference signal (PHDS) and
• ▪ whereby the waveform generator (WFG) generates the modulation signal (S5) depending on the frequency signal (FS).

Description of the figures

figure 1

1 shows a simple schematic sketch of the main parts of the setup, consisting of a laser source as a pump radiation source (LD) and a photodetector (PD) in the form of a photodiode. A modulation signal source in the form of a waveform generator (WFG) modulates the laser. The laser is the pump radiation source (LD). A waveform generator (WFG) as a modulation signal source supplies the modulation signal (S5) for pulsing the laser of the pump radiation source (LD). The modulation signal source in the form of the waveform generator (WFG) supplies a lock-in amplifier (LIA) with a modulation signal (S5) as a reference signal. Depending on the intensity of the radiation received, the photodetector (PD) generates a received signal (S0). The lock-in amplifier (LIA) extracts from the received signal (S0) the level of the signal portion of the received signal (S0) that correlates with the modulation signal (S5). In the example of 1 the lock-in amplifier (LIA) digitizes this level. The computer core (CPU) of the control device (STV) can use the internal data bus (INTDB) of the control device (STV), the engine data bus interface (MDBIF) and the device-internal data bus (MDB), the lock-in amplifier (LIA), the Control the pump radiation source (PD) and the waveform generator (WFG). The computer core (CPU) of the control device (STV) can also use the internal data bus (INTDB) of the control device (STV), the motor data bus interface (MDBIF) and the device-internal data bus (MDB) to transmit the determined level values of the lock-in amplifier in the example of 1 query and, for example, make them available to other higher-level computer systems via an external data bus (EXTDB). The pump radiation source (LD) emits pump radiation (LB). The pump radiation is preferably a laser beam. Pumping with a non-coherent light beam is possible. The pump radiation (LB) of the pump radiation source (PD) happens in the example 1 a dichroic beam splitter (DBS). An optical system feeds the pump radiation into the optical waveguide (LWL). After passing through the optical waveguide, the fiber end of the optical waveguide (LWL) decouples the pump radiation (LB) again, preferably by means of an optical decoupling system, and irradiates the crystal (HDNV). In the example of 1 For example, the crystal (HDNV) should be a crystal (HDNV) with an extremely high density of paramagnetic centers, at least in some areas. Preference should be given to the paramagnetic centers in the example of 1 be NV centers. The crystal (HDNV) in the example should be the 1 thus preferably be a HD-NV diamond (HD-NV) or comprise a HD-NV diamond area. The paramagnetic centers of the crystal (HDNV) emit fluorescence radiation (FL) with a fluorescence radiation wavelength (λ _fl ) when irradiated with the pump radiation (LB) of a pump radiation wavelength (λ _pmp ). Part of this fluorescence radiation couples back into the optical waveguide (LWL). The fluorescence radiation (FL) from the paramagnetic centers of the crystal (HDNV) emerges at the other end of the waveguide and again passes through the optical system for feeding the pump radiation (LB) into the optical waveguide (LWL) in the opposite direction. The dichroic beam splitter (DBS) separates the optical pump radiation (LB) from the pump radiation source (LD) and the fluorescence radiation (FL) from the paramagnetic centers of the crystal (HDNV9. In the case of a HD-NV diamond as a crystal (HDNV), the dichroic beam splitter ( DBS) the optical pump radiation (LB) of the pump radiation source (LD) and the fluorescence radiation (FL) of the NV centers of the HD-NV diamond (HDNV). The crystal (HDNV) is mounted in an exemplary dual circuit goniometer (MEMSG) as an alignment device (DMT, RT, HLT) for aligning the crystal (HDNV). The dual circuit goniometer includes in the example 1 the diamond holder (DMT), a rotary device (RT) and a holder (HLT). The device of 1 is therefore an exemplary dual circuit goniometer (MEMSG). In the example of 1 the rotation device (RT) can rotate the diamond holder (DMT) around a Y-axis (AXy). The crystal (HDNV) with the paramagnetic center or centers or with the pair or pairs of paramagnetic centers is preferably fixed to the diamond holder (DH). The crystal may be or comprise diamond (HDNV). The crystal can be a HD-NV diamond (HDNV) or can comprise such a crystal domain, ie a HD-NV diamond domain, for example. The crystal (HDNV) may comprise one or more paramagnetic centers and/or one or more coupled pairs of paramagnetic centers and/or one or more clusters of coupled paramagnetic centers. The crystal (HDNV) may comprise one or more NV centers and/or one or more coupled pairs of NV centers and/or one or more clusters of coupled NV centers. The crystal (HDNV) may comprise one or more SiV centers and/or one or more coupled pairs of SiV centers and/or one or more clusters of coupled SiV centers. The crystal (HDNV) may comprise one or more GeV centers and/or one or more coupled pairs of GeV centers and/or one or more clusters of coupled GeV centers. The crystal (HDNV) may comprise one or more ST1 centers and/or one or more coupled pairs of ST1 centers and/or one or more clusters of coupled ST1 centers. The crystal (HDNV) may comprise one or more TR12 centers and/or one or more coupled pairs of TR12 centers and/or one or more clusters of coupled TR12 centers.

The diamond holder (DH) is preferred and in the 1 for example mechanically rotatable about a Y-axis (AXy) connected to the rotation device (RT). The computer core (CPU) of the control device (STV) transmits a setting value as an alignment parameter to a Y-axis motor controller (GDy) for the Y-axis (AXy) of the alignment device. The Y-axis motor controller (GDy) then causes the rotation device (RT) to rotate the diamond holder (DH) about the Y-axis (AXy). Preferably, the rotation device (RT) then rotates the diamond holder (DH) by an angular amount specified by the computer core (CPU) of the motor controller (GDy) for the Y-axis (AXy) as an alignment parameter around the Y-axis (AXy) into a Computer core (CPU) of the motor control (GDy) for the Y-axis (AXy) as an alignment parameter specified direction of rotation.

The rotation device in turn is in the example of 1 mechanically rotatable around a Z-axis (AXz) connected to the holder (HLT). The computer core (CPU) of the control device (STV) transmits a second setting value as an alignment parameter to a Z-axis motor controller (GDz) for the Z-axis (AXz) of the alignment device. The Z-axis motor controller (GDz) then causes the holder (HLT) to rotate the rotary device (RT) about the Z-axis (AXz). Preferably, the holder (HLT) then rotates the rotation device (RT) by an angular amount specified by the computer core (CPU) of the Z-axis motor controller (GDz) for the Z-axis (AXz) as an alignment parameter around the Z-axis (AXz) in a direction of rotation also specified by the computer core (CPU) of the Z-axis motor controller (GDz) for the Z-axis (AXz) as an alignment parameter.

The computer core (CPU) of the control device (STV) of the device 1 adjusts the alignment device (DMT, RT, HLT) according to given alignment parameters.

The computer core (CPU) of the control device (STV) uses an X magnetic field control (MFSx) of the magnetic flux density B in the X direction for the X magnetic field generator coil (MGx) for generating a magnetic flux density B in the X direction. The X magnetic field control (MFSx) energizes the X magnetic field generator coil (MGx) and thus generates a magnetic flux density B in the X direction. The computer core (CPU) of the control device (STV) controls the X magnetic field control (MFSx) via the internal data bus (INTDB), the motor data bus interface (MDBIF) and the device-internal data bus (MDB). Typically, the computer core (CPU) of the control device (STV) controls the X magnetic field control (MFSx) in such a way that it energizes the X magnetic field generator coil (MGx) for generating a magnetic flux density B in the X direction with a corresponding electric current. With the help of an exemplary sensor element (MSx) for measuring the magnetic flux density B in the X direction, the computer core (CPU) of the control device (STV) can detect the strength of the real magnetic flux density B in the X direction. In general, the accuracy of the exemplary sensor element (MSx) for measuring the magnetic flux density B in the X direction should not be as precise as the sensitivity of the fluorescence features to misalignments of the magnetic flux density B direction the crystal (HDNV). Therefore, the computer core (CPU) will ultimately only use this control loop (MFSx, MGx, MSX) to roughly adjust the magnetic flux density B in the X direction and then use an iterative and scan-based search method to search for the extremum of the targeted fluorescence feature.

The computer core (CPU) of the control device (STV) uses a Y magnetic field control (MFSy) of the magnetic flux density B in the Y direction for the Y magnetic field generator coil (MGy) to generate a magnetic flux density B in the Y direction. The Y magnetic field control (MFSy) energizes the Y magnetic field generator coil (MGy) and thus generates a magnetic flux density B in the Y direction. The Y magnetic field generator coil (MGy) for generating the magnetic flux density B in the Y direction is in the 1 only indicated as a simple circle. This is for better clarity. In the 1 is the axis of the Y magnetic field generator coil (MGy) for generating the magnetic flux density B in the Y direction perpendicular to the surface of the 1 to think. The computer core (CPU) of the control device (STV) controls the Y magnetic field control (MFSy) via the internal data bus (INTDB), the motor data bus interface (MDBIF) and the device-internal data bus (MDB). Typically, the computer core (CPU) of the control device (STV) controls the Y magnetic field control (MFSy) in such a way that it energizes the Y magnetic field generator coil (MGy) to generate a magnetic flux density B in the Y direction with a corresponding electric current. With the help of an exemplary sensor element (MSy) for measuring the magnetic flux density B in the Y direction, the computer core (CPU) of the control device (STV) can detect the strength of the real magnetic flux density B in the Y direction. In general, the accuracy of the exemplary sensor element (MSy) for measuring the magnetic flux density B in the Y-direction should not be as precise as the sensitivity of the fluorescence features to misalignments of the direction of the magnetic flux density B versus the crystal (HDNV). Therefore, the computer core (CPU) will ultimately only use this control loop (MFSy, MGy, MSY) to make a rough adjustment of the magnetic flux density B in the Y direction and then use an iterative and scan-based search method to search for the extremum of the targeted fluorescence feature;

The computer core (CPU) of the control device (STV) uses a Z magnetic field control (MFSz) of the magnetic flux density B in the Z direction for the Z magnetic field generator coil (MGz) for generating a magnetic flux density B in the Z direction. The Z magnetic field controller (MFSz) energizes the Z magnetic field generator coil (MGz) and thus generates a magnetic flux density B in the Z direction. The computer core (CPU) of the control device (STV) controls the Y magnetic field control (MFSz) via the internal data bus (INTDB), the motor data bus interface (MDBIF) and the device-internal data bus (MDB). Typically, the computer core (CPU) of the control device (STV) controls the Z magnetic field control (MFSz) in such a way that it energizes the Z magnetic field generator coil (MGz) for generating a magnetic flux density B in the Z direction with a corresponding electric current. With the help of an exemplary sensor element (MSz) for measuring the magnetic flux density B in the Z direction, the computer core (CPU) of the control device (STV) can detect the strength of the real magnetic flux density B in the Z direction. In general, the accuracy of the exemplary sensor element (MSz) for measuring the magnetic flux density B in the Z-direction should not be as precise as the sensitivity of the fluorescence features to misalignments of the direction of the magnetic flux density B with respect to the crystal (HDNV). Therefore, the computer core (CPU) will ultimately only use this control loop (MFSz, MGz, MSZ) to make a rough adjustment of the magnetic flux density B in the Z direction and then use an iterative and scan-based search method to search for the extremum of the targeted fluorescence feature;

The example device 1 further includes, by way of example, a charging device (LDV). The loading device (LDV) of 1 serves the electrical supply of the quantum technological device 1 in second periods.

In these second periods, the computer core (CPU) of the control device (STV) of the quantum technological device 1 prefers not to use quantum technological methods to measure the properties of fluorescence radiation (FL). In these second time periods, the charging device (LDV) preferably charges an energy reserve (BENG) with electrical energy.

In the first time periods, which do not overlap in time with the second time periods, the computer core (CPU) of the control device (STV) of the quantum technological device 1 However, he prefers quantum-technological methods by measuring the properties of the fluorescence radiation (FL). The charging device (LDV) typically does not charge the energy reserve (BENG) with electrical energy during these second periods of time.

In the first time periods, the separating device (TS) preferably separates the charging device (LDV) from the energy reserve (BENG). The energy reserve (BENG) then supplies the sensitive device parts of the device in the first time periods 1 with low-interference electrical energy of better quality.

In the second time periods, the separating device (TS) preferentially connects the charging device (LDV) to the energy reserve (BENG), so that the charging device (LDV) can charge the energy reserve (BENG). Typically, in these second periods, the charging device (LDV) supplies the energy reserve (BENG) and the sensitive device parts of the device of FIG 1 with electrical energy of lower quality since the voltage level and current value curves of the outputs of the charging device (LDV) typically show transients of the power grid and other consumers.

A voltage regulator (SRG) draws low-noise electric energy from the energy reserve (BENG) during the first periods in which the charging device (LDV) does not supply the quantum technological device with electrical energy and adjusts the drawn voltage or voltages and those of the Device parts of the quantum technological device required supply voltages. Typically, the voltage regulator (SRG) takes lower quality electrical energy from the energy reserve (BENG) and/or from the outputs of the charging device (LDV) and adjusts in the second time periods in which the charging device (LDV) supplies the quantum technological device with electrical energy as before, the removed voltage or the removed voltages and the supply voltages required by the device parts of the quantum technological device. The voltage regulator (SRG) may include multiple voltage regulators (SRG). Possibly and less preferably, the voltage regulator (SRG) temporarily supplies one or more parts of the quantum technological device 1 also in first periods of time with electrical energy when the quantum technological device executes a quantum technological method.

The computer core (CPU) of the control device (STV) preferably controls the charging device (LDV), the disconnecting device (TS) and the voltage regulator and records and monitors their parameters and the pair meters of the energy reserve (BENG).

figure 2

2 shows the normalized fluorescence intensity of the fluorescence radiation (FL) of a HD-NV diamond as a function of the magnitude of the magnetic flux density B. The direction of the magnetic flux density B is precisely aligned with the <111> crystal direction of the HD-NV diamond (HDNV). The measurement setup corresponds to the measurement setup of the 1 . The value of the fluorescence intensity of the fluorescence radiation (FL) is normalized to the plateau value of the fluorescence intensity of the fluorescence radiation (FL) at a magnetic flux density B of 8 mT.

For comparison, a smooth curve is plotted with the theoretical fluorescence intensity values of fluorescence radiation (FL) based on a simple model. This simple model (simple model) assumes an ensemble of multiple NV centers in the diamond in tetrahedral symmetry with no coupling.

The curve shows five areas in which the intensity of the fluorescence radiation (FL) decreases. The GSLAC minimum (E _102.4.0 ) at about 102.4mT is in the 4 and 5 shown in more detail. The minimum (E _34.0,0 ) of the resonance of an equivalent NV-NV pair at about 34 mT is in the 6 , 7 and 8th shown in more detail. The minimum (E _9.5.0 ) at about 9.5 mT is in the 9 , 10 and 11 shown in more detail. In addition, the curve also shows the fluorescence intensity minimum (E _51.0.0 ) of the NV-P1 resonance at about 51.0 mT. Furthermore, the curve also shows the fluorescence intensity minimum (E _59.5.0 ) of the non-equivalent NV-NV resonance at about 59.5 mT.

Importantly, these fluorescence features are only measurable when the direction of the magnetic flux density B is aligned with the crystal (HDNV). The high density of NV centers in the diamond (HDNV) on which the measurements were taken increases the probability for the coupling of two co-aligned NV centers and increases the probability for NV-NV coupling, since the mean distance between two different NV centers is reduced by the high density of NV centers. In this context, the writing presented here refers to the writing

The preferred method for producing diamonds (HDNV) with high NV center density is to irradiate the diamonds with high energy particles according to the WO 2021 013 308 A1 . The key technology for the production of HD-NV diamonds (HDNV) is described in detail there. The irradiation preferably takes place in a quartz vessel, in which the diamonds are then placed in the form of diamond blanks for the irradiation. The quartz vessel is preferably open at the top for the entry of the particle beam. A temperature sensor, for example a thermocouple, is preferably introduced or introduced into or on the diamonds during the irradiation in order to obtain an actual temperature value for controlling the processing temperature of the diamonds during the irradiation. The diamond or diamonds are preferably irradiated with electrons, since these can penetrate the diamond completely and to some extent homogeneously if the energy is sufficiently high. The energy of the electrons of the electron beam is preferably greater than 500 keV and/or greater than 1 MeV and/or greater than 3 MeV and/or greater than 4 MeV and/or greater than 5 MeV and/or greater than 6 MeV and/or greater than 7 MeV and/or greater than 9 MeV and/or greater than 10 MeV and/or greater than 10 MeV, with an energy of 10 MeV clearly being the most preferred at present as the optimum in the facility used to prepare the present paper . An energy of the particles of more than 20 MeV should be avoided, since otherwise radioactive activation of the diamond material can occur. The radiation dose for this irradiation with electrons is preferably between 5*10 ¹⁷ cm ^-2 and 2*10 ¹⁸ cm ^-2 , but at least below 10 ¹⁹ cm ^-2 . It is important that the temperature of the diamond or diamonds during the irradiation with these electrons is controlled at a temperature greater than 600° C. and/or greater than 700° C. and/or greater than 800° C. and less than 900° C. and/or less 1000°C and/or less than IIOO0C and/or less than 1200°C. Preferably, however, the optimum temperature is between 800°C and 900°C based on experience in the development of this invention. With other temperatures, other centers in the diamond are preferred. When controlling the temperature, the heating by the first heating energy flow of an external heater that is typically present and the second heating energy flow of the heating by the electron beam current, which is typically neglected, must be taken into account. The heating by these heating energy flows is opposed to the cooling energy flow of the cooling by heat dissipation into a heat sink. The beam current of the electric current of these electrons of the electron beam is now preferably set or regulated in such a way that the irradiation time to achieve the above irradiation dose is at least 0.05 days and/or at least 0.5 days and/or at least 1 day and/or at least 2 days and/or at least 4 days and/or at least 8 days. During the development, 2 days of irradiation were used for very successful tests. Is preferred because of the costs of such a system, a pulsed linear accelerator (Linac for "linear accelerator") is used for the irradiation with a pulsed electron current due to the design. The heating energy of the electron beam is determined by the energy of the electrons and the average beam current. The heating energy supplied during the irradiation is dissipated into a heat sink via the said thermal dissipation resistor. The total heat energy supplied is preferably controlled by means of a thermal sensor, which detects the temperature of the diamond blanks during the irradiation, and by means of a controller, which controls one, preferably the essential flow of heat energy, so that a desired processing temperature of the diamonds is within a target temperature band around the target temperature around for the diamond blanks during irradiation. The regulated heating energy flow, which heats the diamond blanks during the irradiation, is preferably pulse-modulated in whole or in part, at least at times, in whole or in part. Ie it is supplied in heating pulses. That is, it varies over time in a pulsed manner between a first energy flow value that is supplied to the diamond blanks in a first time period of a pulse modulation time period and a second energy flow value that is supplied to the diamond blanks in a second time period of the pulse modulation time period during irradiation. The first energy flow value is preferably different from the second energy flow value. The controller, which is preferably a PI or PID controller, preferably regulates the temperature by setting the heating pulse amplitude, the heating pulse width, the heating pulse spacing or the duty cycle of the pulse modulation of the heating pulses, i.e. using a pulse modulation method. This expressly also includes that the controller achieves the setting of the heating pulse amplitude, the heating pulse width, the heating pulse spacing or the duty cycle of the pulse modulation of the heating pulses, i.e. the pulse modulation, by regulating the pulses of the steel stream. The duty cycle is also referred to as the duty cycle. This method has the advantage that the diamond becomes extremely hot locally during the irradiation without graphitizing. These temperatures are not created at the surface of the diamond, but within the region of the diamond inside the diamond that is penetrated by the jet stream. These high temperatures temporarily increase the mobility of the vacancies and nitrogen atoms. This facilitates the formation of the NV centers. With the method described above, depending on the nitrogen and hydrogen content of the diamond blanks before irradiation, diamond with an NV center density of more than 500 ppm and/or more than 200 ppm and/or more than 100 ppm and/or more than 50 ppm and/or more than 20 ppm and/or more than 10 ppm and/or more than 5 ppm and/or more than 2 ppm and/or more than 1ppm and/or more than 0.1ppm and/or more than 0.01ppm and/or more than 10 ^-3 ppm and/or more than 10 ^-4 ppm and/or more than 10 ^-5 ppm and/or more than 10 ^-6 ppm based on the number of carbon atoms per unit volume. Such diamonds are particularly suitable as sensor elements of the proposed devices and for other quantum technological devices.

During the irradiation, the typically LINAC-specific unavoidable pulsation of the electron beam and thus also its heating energy is preferably stabilized by regulation in order to achieve predictable results. Instead of irradiating with electrons, it is also possible to irradiate with protons or helium nuclei or other particles, eg neutrons, which then possibly only provide the diamond with NV centers on the surface because of the lower penetration depth, which can be advantageous. Independent of the type of particles used, such a diamond then shows traces of irradiation with particles, in particular with electrons and/or protons and/or helium. In one form, the diamond provided or an epitaxial layer of sufficient thickness on at least one surface of the diamond is preferably isotopically pure. In this context, “isotopically pure” in the sense of this document means that more than 99.5% of the diamond's atoms can be assigned to a carbon isotope, preferably the ¹² C isotope free of nuclear spins. This leads to few disturbing nuclear spins of carbon atoms. The thickness of an epitaxial layer is sufficient if the paramagnetic centers (NV1) in this layer behave as if the surrounding diamond were completely isotopically pure. The high density of the paramagnetic centers (NV1) is preferably realized only in a small volume within the sensor element, for example the diamond, with a preferably high intensity of the pump radiation (LB), since the non-linearity of the intensity of the fluorescence radiation (FL) of the paramagnetic centers otherwise would lead to a reduction in contrast. Finally, it should be mentioned that the irradiation can also only take place locally. If, for example, the nitrogen atoms in a diamond have only been introduced in a thin plane, for example by ion implantation, the electron beam can only penetrate the crystal along transmission axes that are spaced apart from one another. The same is possible for other materials and centers if these can be produced by ion implantation followed by electron or particle irradiation. In the example of NV centers in diamond, paramagnetic centers then only form at the crossing points between these transmission axes and the layer of implanted nitrogen atoms if the parameters are chosen correctly. In this way, for example, superlattices can be formed from groups of paramagnetic centers. Each group of paramagnetic centers in this superlattice can represent a material that has a high density of paramagnetic centers within the respective group. In the case of groups of NV centers in diamond, the material of the groups of NV centers is thus preferably HD-NV diamond, which preferably has a density of NV centers of more than 10 ppm or better within the respective group has more than 20ppm.

figure 3

3 shows the difference between the experimentally obtained data and model calculations 2 minus the model curve (simple model) and the main fluorescent features (E _0.5.0 , E _9.5.0 , E _34.0 , E _51.0 , E _59.5.0 , E _102.4.0 ).

figure 4

4 shows enlarged 3 the GSLAC resonance (E _GSLAC , _13C ) and its interaction with the nuclear spins of neighboring ¹³ C atomic nuclei with the corresponding side fluorescence features (E _102.4.9a , E _102.4.8a , E _102.4.7a , E _102.4.6a , E _102.4.5a , E _102.4.4a , E _{102.4.3a ,} E 102.4.2a , E _102.4.1a , E _102.4.1b , E _102.4.2b , E _102.4.3b , E _102.4.4b , E _102.4.5b , E _102.4.6b , E _102.4.7b , E _102.4.8b , E _102.4.9b ) and the main fluorescent feature (E _102.4.0 ).

figure 5

5 shows a table of from the 4 roughly extractable values. The document presented here indicates that if the document presented here is reworked, the exact values should be measured again with possibly better equipment.

figure 6

6 shows enlarged 3 the value of the intensity of the fluorescence radiation (LB) depending on the amount of an external magnetic flux density B with the external magnetic flux density B at ≈29 mT to 38 mT. Here, the direction of the magnetic flux density B is aligned parallel to the <111> direction of the diamond (HDNV). The displayed value of the value of the intensity of the fluorescence radiation (LB) is normalized to the value at 29 mT.

figure 7

7 shows the value of the intensity of fluorescence radiation (FL). 6 subtracts minus the linear offset of the 6 (exp) fitted by a symmetric multi-Gaussian (fit) centered at 34.0 mT with the corresponding side fluorescence features (E _34.11a , E _34.10a , E _34.9a , E _34.8a , E _{34 ,7a} , E _34,6a , E _34,5a , E _34,4a , E _34,3a , E _{34,2a ,} E 34,1a , E _34,1b , E _34,2b , E _34,3b , E _{34 ,4b} , E _34,5b , E _34,6b , E _34,7b , E _34,8b , E _34,9b , E _34,10b , E _34,11b , E _34,12b , E _34,13b ) and dem Main fluorescent feature (E _34.0 ,).

figure 8

8th shows a table of from the 6 roughly extractable values. The document presented here indicates that if the document presented here is reworked, the exact values should be measured again with possibly better equipment.

figure 9

9 shows enlarged 3 the value of the intensity of the fluorescence radiation (FL) depending on the amount of an external magnetic flux density B with the external magnetic flux density B at ≈0 mT to 14 mT. Here, the direction of the magnetic flux density B is aligned parallel to the <111> direction of the diamond (HDNV). The value shown, which shows the value of the intensity of the fluorescence radiation (LB), is normalized to the value at 0 mT. The straight line (extr) shows a linear extrapolation of the fluorescence radiation intensity (FL), which serves as a subtraction line for the experimental data (exp) to visually clarify the resonance lines.

figure 10

10 shows the value of the intensity of fluorescence radiation (FL). 9 subtracts minus the linear offset of the 9 (exp), centered at 9.5 mT (exactly 9.38mT) with the corresponding side fluorescence features (E _9.5.8a , E _9.5.7a , E _9.5.6a , E _9.5.5a , E _9.5.4a , E _{9.5, 3a} , E _9.5.2a , E _9.5.1a , E _9.5.1b , E 9.5.2b _, E _9.5.3b , E _9.5.84b , E _9.5.5b , E _9.5.6b ) and the main fluorescent feature (E _9.5.0 ).

figure 11

11 shows a table of from the 10 roughly extractable values. The document presented here indicates that if the document presented here is reworked, the exact values should be measured again with possibly better equipment.

figure 12

12 shows the angle-dependent fluorescence measurements for 0 mT to 111 mT ( 12 ) as a function of the angle of misalignment. The document presented here thus discloses that the misalignment between the direction of the magnetic flux density B and the <111> direction of the crystal (HDNV), in particular the diamond crystal measured here, or a crystallographically equivalent crystal direction of the crystal (HDNV), in particular the one measured here Diamond Crystal, Less Than 10°, Better Less Than 5°m Better Less Than 2°, Better Less Than 1°, Better Less Than 30', Better Less Than 15', Better Less Than 10', Better Less Than 5', Better Less Than 2', better less than 1', better less than 30'', better less than 15'', better less than 10'', better less than 5'', better less than 2'', better less than 1''. If this alignment is not given, then the fluorescence characteristics of the writing presented here are not observable and are accordingly not available for technical use.

13 shows the angle-dependent fluorescence measurements for 30 mT to 39 mT ( 13 ). The paper presented here thus discloses that the misalignment between the direction of magnetic flux Density B and the <111> direction of the crystal (HDNV), in particular of the diamond crystal measured here, or a crystallographically equivalent crystal direction of the crystal (HDNV), in particular of the diamond crystal measured here, less than 10°, better less than 5°m Better less than 2°, better less than 1°, better less than 30', better less than 15', better less than 10', better less than 5', better less than 2', better less than 1', better less than 30'', better less than 15'', better less than 10'', better less than 5'', better less than 2'', better less than 1'' should be. If this alignment is not given, then the fluorescence characteristics of the writing presented here are not observable and are accordingly not available for technical use.

figure 14

14 shows the angle-dependent fluorescence contrast (PLC) for various fluorescence features obtained from the data of the 13 and 14 were extracted ( 14 ). The document presented here thus discloses that the misalignment between the direction of the magnetic flux density B and the <111> direction of the crystal (HDNV), in particular the diamond crystal measured here, or a crystallographically equivalent crystal direction of the crystal (HDNV), in particular the one measured here Diamond Crystal, Less Than 20°, Less Than 10°, Better Less Than 5°m Better Less Than 2°, Better Less Than 1°, Better Less Than 30', Better Less Than 15', Better Less Than 10', Better Less Than 5', better less than 2', better less than 1', better less than 30'', better less than 15'', better less than 10'', better less than 5'', better less than 2'', better less than 1''. If this alignment is not given, then the fluorescence characteristics of the writing presented here are not observable and are accordingly not available for technical use.

figure 15

15 Figure 12 shows the shift of the minimum of the 34.0 mT minimum (E _34.0,0 ) of the calculated and measured magnetic field misalignment of the magnetic flux density B versus the <111> crystal direction of the diamond. It is the 34.0 mT fluorescent feature (E _34.0.0 ).

Obviously, the magnitude of the magnetic flux density B at which the minimum occurs depends on the misalignment angle.

figure 16

16 shows a three-dimensional illustration of the structure of the 1 for the angle and magnetic field dependent fluorescence measurements of the fiber coupled diamond. In this example, the measurement setup includes two piezo-driven rotary tables (DMT, RT), which are mounted in a magnetic field coil system (MGz). A fiber optic cable (LWL) with the diamond (HDNV) at its end is connected to the rotary tables (DNT, RT) via a fiber optic cable (LWL) as a holder. The diamond (HDNV) is thus goniometrically mounted in the magnetic field of the coil (MGz) using a dual circuit goniometer (DMT, RT, HLT). To simplify the illustrations, the other parts of the device 1 not drawn.

Figures 17, 18 and 19

17 shows an exemplary micromechanical dual circuit goniometer (MEMG) for aligning a crystal (HDNV) in a magnetic field or in relation to a housing (GH).

the 17 shows an overview of the details of the 18 and 19 . The inscriptions of 17 are in the 18 and 19 shown enlarged. This enables a more detailed display. the 18 shows the upper part of the 17 . the 19 shows the lower part of the 17 .

Co-integration microelectronics/MEMS device

The manufacturing process of the micromechanical two-circuit goniometer (MEMG) particularly preferably also includes process steps for manufacturing electronic components, wiring and insulation layers and/or insulation structures. These process steps are preferably process steps of a CMOS, a BiCMOS or a bipolar process or the like. The manufacturing process of the micromechanical two-circuit goniometer (MEMG) particularly preferably also produces optical waveguides (LWL1, LWL2).

reset circuit (RES)

The MEMS goniometer (MEMSG) preferably comprises a reset circuit (RES) as a microelectronic co-integrated circuit. The reset circuit (RES) determines conditions that force the system reset of the MEMS goniometer (MEMSG) to a defined state. Such conditions can be, for example, but not limited to, turning on the power supply and/or a software signal from the computer core (CPU) and/or a signal from a watchdog circuit, etc. As soon as such conditions are present, the reset circuit (RES) resets the system of the MEMS goniometer (MEMSG) or subsystems of the MEMS goniometer (MEMSG) to a respectively defined state depending on the triggering conditions.

clock generator (CLK)

Furthermore, the MEMS goniometer (MEMSG) preferably includes a clock generator (CLK), which supplies the co-integrated circuit parts of the MEMS goniometer (MEMSG) with one or more system clocks.

Voltage regulators (SRG1, SRG2, SRG3, SRG4) and charging circuit (LDV) with disconnect device (TS) and energy reserve (BENG)

The co-integrated circuit parts of the MEMS goniometer (MEMSG) preferably also include one or more voltage regulators (SRG1, SRG2, SRG3, SRG4) and a charging circuit (LDV). The charging device (LDV) preferably charges an energy reserve (BENG), which is typically arranged externally, with electrical energy. The external energy reserve (BENG) is preferably connected to a separator (TS) by means of bond wires via bond pads of the MEMS goniometer (MEMSG). The disconnecting device (TS) can electrically connect the power reserve (BENG) to the charging device (LDV) for charging or electrically disconnect the power reserve (BENG) from that of the charging device (LDV) in order to avoid disturbances in the supply voltages of the other systems of the co-integrated MEMS goniometer (MEMSG) by transients of the loading device (LDV) during the measurements. The computer core (CPU) preferably controls both the loading device (LDV) and the separating device (TS) via the device-internal data bus (MDB), for example. The charging device (LDV) is preferably connected to the supply voltage (Vbat) and the reference potential (GND) via the bond pads and bond wires and the corresponding connections of the housing. In the example of 17 a first voltage regulator (SR1) draws energy from the energy reserve (BENG) and generates a first internal supply voltage (Vbat1, not shown). The energy reserve (BENG) is preferably arranged externally. The energy reserve (BENG) can be an accumulator or a capacitor, for example. The first voltage regulator (SR1) preferably supplies electrical energy to a first X motor controller (GDx) for the X axis of the alignment device (MEMSG). The alignment device is preferably the said MEMS goniometer (MEMSG) for aligning the crystal (HDNV) with the paramagnetic centers or the HD-NV diamond or the diamond with the paramagnetic centers.

The charging device (LDV) charges the external energy reserve (BENG) via the disconnecting device (TS) and the interface (BENGIF) for connecting the external energy reserve (BENG) in said second time periods. The disconnecting device (TS) disconnects the charging device (LDV) from the energy reserve in first time periods that do not overlap with the second time periods. The separating device (TS) is preferably part of the interface (BENGIF) for connecting the external energy reserve (BENG).

A second voltage regulator (SR2) preferably supplies the amplifier (AMP) and the lock-in amplifier (LIA) or the synchronous demodulator or the matched filter or the other estimation filter with electrical energy. The energy reserve supplies the second voltage regulator (SR2) with energy in the said first time periods, while in the second time periods the charging device (LDV) preferentially supplies the second voltage regulator (SR2) with energy.

A third voltage regulator (SR3) supplies, for example, the waveform generator (WFG) and the driver (LDDRV) for the pump radiation source (LD) with electrical energy. The third voltage regulator (SR3) may consist of several voltage regulators. Most preferably, each of the voltage regulators supplies the waveform generator (WFG) and the driver (LDDRV) for the pump radiation source (LD) separately. These voltage regulators each have their own energy reserve (BENG). If in the document presented here it was mentioned that the charging device (LDV) charges the energy reserve (BENG), then this preferably means that the charging device (LDV) prefers all energy reserves (BENG) loads. Thus, the proposed MEMS goniometer (MEMSG) then comprises a number of energy reserves (BENG), which are preferably arranged externally in relation to the MEMS goniometer (MEMSG). The charging device (LDV) charges these energy reserves (BENG) in said second time periods. However, when carrying out the quantum operations using the paramagnetic centers of the crystal (HDNV) during the first time periods, these energy reserves (BENG) are separated from the respective loading devices (LDV) by means of corresponding separation devices (TS). In these first periods of time, these energy reserves (BENG) supply the associated circuit parts of the waveform generator (WFG) and the driver (LDDRV) of the pump radiation source (LD) with electrical energy via a respective voltage regulator of the third voltage regulator (SR3). The voltage regulators of the third voltage regulator (SR3) are preferably all or partially differential, so that they regulate not only the positive supply voltage but also the ground line. This prevents transients from being transmitted via the ground line, i.e. the reference potential line (GND).

An exemplary fourth voltage regulator (SR4) preferably supplies the control device (STV) and its sub-devices with electrical energy. In particular, the fourth voltage regulator (SR4) preferably supplies the computer core (CPU) and the read/write memory (RAM), the non-volatile memory (NVM) and the data bus interface (DBIF) of the control device (STV) with electrical energy.

alignment device

The first X motor controller (GDx) is preferably co-integrated in the device wafer (Si2) of the MEMS goniometer (MEMSG). In the example of 17 until 20 the first X motor controller (GDx) drives a first electrostatic torsion motor. The first electrostatic torsion motor is preferably a so-called comb drive, here the first X-axis comb drive (=first electrostatic torsion motor for the X-axis [AXx]) (CBDRV1x). Such an electrostatic motor is, for example, from 1a and 1b the WO 2001 073 935 A1 known. The second electrostatic torsion motor is preferably also a so-called comb drive, here the second X-axis comb drive (=second electrostatic torsion motor for the X-axis [AXx]) (CBDRV2x).

The second Y motor controller (GDy) is preferably co-integrated in the device wafer (Si2) of the MEMS goniometer (MEMSG). In the example of 17 until 20 the first Y motor controller (GDy) drives a third electrostatic torsion motor. The third electrostatic torsion motor is preferably a so-called comb drive, here the first Y-axis comb drive (=first electrostatic torsion motor for the Y-axis [AXy]) (CBDRV1y). Such an electrostatic motor is, for example, from 1a and 1b the WO 2001 073 935 A1 known. The fourth electrostatic torsion motor is preferably also a so-called comb drive, here the second Y-axis comb drive (=second electrostatic torsion motor for the Y-axis [AXx]) (CBDRV2y).

In the examples of 17 until 21 the first X-axis comb drive (CBDRV1x) and the second X-axis comb drive (CBDRV2x) drive the rotational movement of the entirety of the first rotary body (Rx) and the second rotary body (Ry) including the auxiliary units (GDy, CBDRV1y , CBDRV2y), magnetic field generating structures (MG) and crystal, in particular HD-NV diamond (HDNV). In the examples of 17 until 20 the first Y-axis comb drive (CBDRV1y) and the second Y-axis comb drive (CBDRV2y) drive the rotational movement of the entirety of the second rotary body (Ry) including the auxiliary units (GDy, CBDRV1y, CBDRV2y), magnetic field generating structures (MG) and Crystal, especially HD-NV Diamond (HDNV). The X axis (AXx) and the Y axis (AXy) are preferably perpendicular to one another. A rotation of the first rotary body (RX) around the X-axis (AXx) in the example also swivels the Y-axis (AXy), the Y-motor drivers (GDy) for the Y-axis comb drives (CBDRV1y, CBDRV2y) and the Y-axis comb drives (CBDRV1y, CBDRV2y) as well as the second rotating body (RY) with the magnetic field generating structures (MG), the depression (VT) and the crystal (HDNV) with the paramagnetic centers, the example a HD NV Diamond (HDNV). A rotation of the second rotating body (RY) around the Y-axis (AXy) only pivots the second rotating body (RY) with the magnetic field generating structures (MG), the recess (VT) and the crystal (HDNV) in the example.

control device (STV)

The computer core of the control device (STV) controls, among other things, the X motor controller (GDx) of the X-axis comb drives (CBDRV1x, CBDRV2x) for the X-axis (AXx) of the alignment device to align the device, preferably via the device-internal data bus (MDB). crystal (HDNV) with the paramagnetic centers. The computer core of the control device (STV) preferably controls over the device-internal Data bus (MDB) including the Y motor control (GDx) of the Y axis comb drives (CBDRV1y, CBDRV2y) for the Y axis (AXy) of the alignment device for aligning the crystal (HDNV) with the paramagnetic centers. The computer core of the control device (STV) controls the Z motor control (GDx) of the Z-axis comb drives (CBDRV1z, CBDRV2z) for the Z-axis (AXz) of the alignment device, preferably via the device-internal data bus (MDB). Alignment of the crystal (HDNV) with the paramagnetic centers. In the 17 until 19 no rotary device is provided for the Z-axis. It is not shown for the sake of simplicity.

The computer core of the control device (STV) controls the X magnetic field control (MFSx) of the magnetic flux density B in the X direction for the X magnetic field generator coil (MGx) for the generation of a magnetic flux density B in, preferably via the device-internal data bus (MDB). X direction. The X-magnetic field controller (MFSx) can be a sub-device of the MEMS goniometer (MEMSG). The X magnetic field generator coil (MGx) can be a device external to the MEMS goniometer (MEMSG), which can be electrically connected to an X magnetic field controller (MFSx) of the MEMS goniometer (MEMSG), for example via the bond pads and bond wires.

The computer core of the control device (STV) controls, if necessary, preferably via the device-internal data bus (MDB), among other things, the Y magnetic field control (MFSy) of the magnetic flux density B in the Y direction for the Y magnetic field generator coil (MGy) for the generation of a magnetic flux density B in Y direction. The Y magnetic field controller (MFSy) can be a sub-device of the MEMS goniometer (MEMSG). The Y magnetic field generator coil (MGy) can be a device external to the MEMS goniometer (MEMSG), which can be electrically connected to a Y magnetic field controller (MFSy) of the MEMS goniometer (MEMSG), for example via the bond pads and bond wires.

The computer core of the control device (STV) controls, if necessary, preferably via the device-internal data bus (MDB), among other things, the Z magnetic field control (MFSz) of the magnetic flux density B in the Z direction for the Z magnetic field generator coil (MGz) for the generation of a magnetic flux density B in Z direction. The Z Magnetic Field Generator Coil (MGz) and the Z Magnetic Field Controller (MFSz) may be a sub-device of the MEMS Goniometer (MEMSG). The section of this document presented here refers here, for example, to 23 . The Z magnetic field controller (MFSz) can be a sub-device of the MEMS goniometer (MEMSG). The Z magnetic field generator coil (MGz) can be a device external to the MEMS goniometer (MEMSG), which can be electrically connected to a Z magnetic field controller (MFSz) of the MEMS goniometer (MEMSG), for example via the bond pads and bond wires.

The computer core (CPU) of the MEMS goniometer (MEMSG) presented here as an example for aligning a crystal (HDNV) can communicate with higher-level systems via an external data bus (EXTDB) via a data bus interface (DBIF). Furthermore, the control device (STV) of the exemplary MEMS goniometer (MEMSG) preferably has a non-volatile memory (NVM). The non-volatile memory (NVM) can be fully or partially writable. The control device (STV) of the example MEMS goniometer (MEMSG) preferably comprises a random access memory (RAM). The computer core (CPU) uses the random access memory (RAM) and the non-volatile memory (NVM) to process the programs and store data that can be used, among other things, to control and implement the methods described in this document. The internal engine data bus interface (MBDF) is in the 17 as part of the computer core (CPU) for better clarity 17 not specially marked. The computer core (CPU), the non-volatile memory (NVM), the fourth voltage regulator (SR4), the random access memory (RAM), the data bus interface (DBIF) and the internal motor data bus interface (MBDF) are preferably in the semiconductor material of the frame ( RM) of the proposed MEMS goniometer (MEMSG) co-integrated on and in the surface of the device wafer (Si2). Since these parts of the control device (STV) are not so sensitive to voltage fluctuations, it may also be possible to provide the fourth voltage regulator (SR4), which supplies these parts of the MEMS goniometer (MEMSG) with electrical energy, not from the energy reserve (BENG) , but to be supplied with electrical energy via the supply voltage line (VBat) and the reference potential line (GND).

The computer core (CPU) preferably controls the waveform generator (WFG) as part of the control device (STV) via the for a better overview not in 17 drawn motor data bus (MDB). The motor data bus (MDB) is preferably part of the proposed MEMS goniometer (MEMSG). A third voltage regulator (SR3) supplies, for example, the waveform generator (WFG) and the driver (LDDRV) for the pump radiation source (LD) with electrical energy.

The computer core (CPU) preferably controls the amplifier (AMP) and the lock-in amplifier (LIA) or the synchronous demodulator or the matched filter or the other estimation filter.

Waveform Generator (WFG)

The waveform generator (WFG) preferably has its own time base in the form of its own clock generator. In the following, the document presented here refers to this as the WFG time base. This WFG time base should preferably be highly accurate in order to ensure precise control of the HD NV diamond (HDNV) 'or of the crystal (HDNV) with the paramagnetic centers. This WFG time base is preferably based on the electrical signal of an oscillating crystal or a micromechanical oscillating element, for example a MEMS cantilever. Typically, the quartz crystal is connected to said WFG time base via the bond pads of the MEMS goniometer (MEMSG) and the bond wires connected to these, as well as the connections of the housing connected to the bond wires. The proposed MEMS goniometer (MEMSG) is thus preferably characterized by a connected mechanical oscillating element that oscillates with high accuracy at a frequency and supplies an associated electrical and periodic signal. The co-integrated MEMS goniometer (MEMSG) preferably includes a control circuit for the oscillating element. The mechanical oscillating element particularly preferably comprises paramagnetic centers or quantum objects which are brought from a ground state to an excited level by means of possibly further modulated electromagnetic pump radiation, from where they return to the non-excited state after a finite time with emission. The control circuit for generating the modulation of the optionally further modulated electromagnetic pump radiation is set in such a way that the relative number of excited paramagnetic centers or quantum objects in the excited state is maximized. This relative number of excited paramagnetic centers or quantum objects in the excited state is at a maximum when the frequency of the modulation, possibly further modulated electromagnetic pump radiation, exactly matches the excitation frequency of the transition of the paramagnetic center from the ground state to the excited state.

For example, a ¹³³ Cs isotope can be a suitable quantum object for such a frequency base. A controller determines the relative number of excited paramagnetic centers or quantum objects in the excited state. If the relative number of excited paramagnetic centers or quantum objects in the excited state is not maximum or if it does not correspond to a required threshold value or does not exceed it, a controller adjusts the excitation frequency accordingly. This excitation frequency can then be the basis of the WFG time base. The document presented here thus proposes coupling a device for controlling paramagnetic centers, in particular NV centers in diamond, with an atomic clock as a time base in order to be able to generate precise control signals. In this specific case, the document presented here therefore proposes a waveform generator with an atomic clock as the time base of the clock generator of the waveform generator (WFG). In the present example, such an exemplary embodiment of the device for controlling paramagnetic centers includes the atomic clock, which serves as a frequency standard and supplies a frequency signal as a reference frequency, the WFG time base, which adapts this reference signal to the requirements of the waveform generator (WFG) and the base clock for the Waveform generator (WFG) provides the waveform generator which, on this basis, provides the control signals for driving the paramagnetic centers of the crystal (HDNV). The document presented here thus proposes a waveform generator system for controlling the paramagnetic centers which has a particularly high level of precision. The atomic clock (ATC) can be spatially remote from the device with the crystal (HDNV) with the paramagnetic centers. An exemplary atomic clock is, for example, from Scripture EP 3 745 216 B1 known. The atomic clock (ATC) preferably provides a reference frequency signal (RefSig). This reference frequency signal (RefSig) is particularly accurate and preferably has a reference frequency. The paper presented here therefore proposes a waveform generator system with a waveform generator (WFG) and an atomic clock (ATC). The atomic clock (ATC) generates a reference frequency signal (RefSig). The atomic clock (ATC) can transmit the reference frequency signal (RefSig) wired and/or wireless to the waveform generator (WFG). The waveform generator (WFG) includes a time base (TB). The time base (TB) generates a frequency signal (FS). The time base (TB) of the waveform generator (WFG) is synchronized with the reference frequency signal (RefSig). This means that the frequencies of the reference frequency signal (RefSig) and the frequency signal (FS) are in a ratio to one another that can be described as a fraction of two whole positive numbers a and b and that the frequency value of the frequency signal (FS) is divided by the frequency value of the reference frequency signal (RefSig) is equal to the value of the fraction of a divided by b. The waveform generator (WFG) generates a modulation signal (S5) depending on the time base and thus depending on the reference frequency signal (RefSig). This generation of the modulation signal (S5) is based on the frequency signal (FS). The modulation signal (S5) or a signal derived therefrom is then used to control at least one quantum dot or one or more paramagnetic centers.

The time base preferably includes an oscillator (OSZ), a first divider (DV1), a second divider (DV2), a controller (CTR) and a phase detector (PHD). The frequency of the oscillator (OSZ) depends on the value of a control signal (STS). The oscillator (OSZ) generates the frequency signal (FS). The first divider (DV1) generates a divided frequency signal (DFS) from the frequency signal (FS). The second divider (DV2) generates a divided reference frequency signal (DRefSig) from the reference frequency signal (RefSig). The phase detector (PHD) compares the divided frequency signal (DFS) with the divided reference frequency signal (DRefSig) and generates a phase difference signal (PHDS). The controller (CTR) generates the control signal (STS) from the phase difference signal (PHDS). The waveform generator (WFG) generates the modulation signal (S5) as a function of the frequency signal (FS). For example, a counter (CNTR) can count the pulses or zero crossings of the frequency signal (FS) and generate a memory address (ADR). A memory (MEM) returns the value (Val) it has at that memory address (ADR). An analog-to-digital converter (ADC) then generates the modulation signal (S5) from the value (Val).

The MEMS goniometer (MEMSG) described here by way of example preferably comprises the circuits for communication with the atomic clock (ATC) and for receiving the reference frequency signal (RefSig) by the MEMS goniometer.

Control of the paramagnetic centers

The control signals generated by the waveform generator (WFG) as a function of commands and data from the computer core (CPU) of the control device (STV) preferably include the modulation signal (S5) for the pump radiation source (LD). The pump radiation source (LD) preferably generates the pump radiation (LB) as a function of the modulation signal (S5) from the waveform generator (WFG). The pump radiation source (LB) feeds the pump radiation (LB) with the pump radiation wavelength (λ _pmp ) into the first optical waveguide (LWL1). The first optical fiber (LWL1) transports the pump radiation (LB) to the crystal (HDNV) and irradiates the paramagnetic centers within the crystal (HDNV) with the pump radiation. The control signals that the waveform generator (WFG) generates as a function of commands and data from the computer core (CPU) of the control device (STV) can also be microwave signals, for example, which are directed to the paramagnetic centers of the crystal (HDNV) by means of antennas. have an additional effect. The waveform generator (WFG) generates the control signals and/or the modulation signal (S5) depending on the base clock of the WFG time base and on settings that the computer core (CPU) sends to the waveform generator (WFG) using registers of the waveform generator (WFG) via the motor data bus (MDB) makes. The modulation signal (S5) is preferably a pulse-modulated signal. These antennas are preferably also located on the second rotating body (Ry) in the vicinity of the paramagnetic centers of the crystal (HDNV), so that the antennas can irradiate the crystal (HDNV) with the paramagnetic centers well with microwave radiation. The pump radiation source (LD) can be, for example, a discretely constructed light-emitting diode (LED) or laser diode, which the driver (LDDRV) of the pump radiation source (LD) supplies with electrical energy as a function of the modulation signal (S5) of the waveform generator (WFG). The pump radiation source (LD) is particularly preferably a silicon LED. The pump radiation source is very particularly preferably a silicon avalanche LED. For example, it can be a SPAD diode or the like. We refer here to the four writings Sergey Gaponenko, Lorenzo Pavesi, Luca Dal Negro, "Towards the First Silicon Laser (NATO Science Series II: Mathematics, Physics and Chemistry, 93, Band 93)"Springer; 1st edition 2003 (13 Jun. 2008), ISBN-10 : 1402011946 and Motoichi Ohtsu, "Silicon Light-Emitting Diodes and Lasers: Photon Breeding Devices using Dressed Photons (Nano-Optics and Nanophotonics)"Springer; 1st Edition 2016 edition (12 Jun. 2018), ISBN-10: 3319824791 and Ozdal Boyraz, Qiancheng Zhao, "Silicon Photonics Bloom" Mdpi AG (27 Aug. 2020) ISBN-10 : 3039369083 and WO 2020 239 172 A1 (PCT / DE 2020 / 100 430 ).

u.u. the third voltage regulator (SR3) consists of several voltage regulators. Most preferably, each of the voltage regulators supplies the waveform generator (WFG) and the driver (LDDRV) for the pump radiation source (LD) separately. This has the advantage that crosstalk between circuit parts via the supply voltage lines (Vbat, GND) is reduced.

wave optical system

The pump radiation source (LD) is optionally coupled to an optical filter, which suitably modifies and preferably band-limits the spectrum of the pump radiation wavelength (λ _pmp ) of the pump radiation (LB), which the pump radiation source (LD) feeds into a first optical waveguide (LWL1). In particular, the pump radiation (LB), which the pump radiation source (LD) feeds into the first waveguide (LWL1) or which irradiates the crystal (HDNV) with pump radiation (LB), should essentially not have any radiation with the fluorescence wavelength (λ _fl ) of the fluorescence radiation (FL) of the paramagnetic centers of the crystal (HDNV). This optical filter can be, for example, a Bragg filter or a photonic crystal or the like. The pump radiation source (LD) is thus preferably designed in such a way that it essentially does not emit any radiation of the fluorescence radiation wavelength (λ _fl ) of the fluorescence radiation (FL). The pump radiation source (LD) is therefore preferably a laser. The manufacturing process produces the first optical waveguide (LWL1) and the second optical waveguide (LWL2) preferably as micro-optical functional elements on or in the surface of the device wafer (Si2) of the wafer used to manufacture the MEMS goniometer (MEMSG). For example, the first optical waveguide (LWL1) and the second optical waveguide (LWL2) can be an oxide strip that is produced by etching, for example, on the surface of the device wafer of the MEMS goniometer (MEMSG). The document presented here refers, for example, to Karl-Heinz Brenner, “Microoptics: From Technology to Applications (Springer Series in Optical Sciences) (Springer Series in Optical Sciences, 97, Band 97)”, Springer; first edition 2004 edition (14 Mar. 2012), ISBN-10: 1441919317 and WO 2020 239 172 A1 (PCT / DE 2020 / 100 430 ).

The pump radiation source (LB) feeds the pump radiation (LB) into the first waveguide (LWL1). The first optical waveguide (LWL1) can, for example, via the first bearing or the first spring (GR1x) of the first X-axis (AXx), the first rotary body (Rx), the first bearing or the first spring (GR1y) of the second Y-axis (AXy) on the second rotating body (Ry) be performed. There, for example, the pump radiation (LB) emerges from the first optical waveguide (LWL1) and irradiates the crystal (HDNV) with the paramagnetic centers after it has been assembled.

In the example of 17 the second optical waveguide (LWL2) detects at least part of the fluorescence radiation (FL) that the crystal (HDNV) with the paramagnetic centers emits as a function of the pump radiation (LB) and other physical parameters. The second optical fiber (LWL2) can, for example, via the second bearing or the second spring (GR2x) of the first X-axis (AXx), the first rotary body (Rx), the second bearing or the second spring (GR2y) of the second Y-axis (AXy) on the second rotating body (Ry) be performed.

The manufacturing method preferably produces the exemplary second optical waveguide (LWL2) together with the first optical waveguide (LWL1) using the same process steps.

The second optical waveguide (LWL2) preferably transports this part of the fluorescence radiation (FL) to an optical filter (F1). The optical filter (F1) is preferably essentially non-transparent for radiation with the pump radiation wavelength (λ _pmp ) of the pump radiation (LB) of the pump radiation source (LD). The optical filter (F1) is preferably essentially transparent for radiation with the fluorescence radiation wavelength (λ _fl ) of the fluorescence radiation (FL) of the crystal (HDNV) and its paramagnetic centers. As a result, essentially preferably only radiation with the fluorescence wavelength (λ _fl ) reaches the radiation detector (PD).

receiving system

In particular, the radiation detector (PD) converts the intensity of the fluorescence radiation (FL) into a received signal (S0). A screen, for example a radiation-impermeable lacquer layer (BD) or another radiation-proof cover, preferably protects the system made up of optical filter (F1) and photodetector (PD) from scattered light. In the example of 17 an amplifier (AMP) amplifies the received signal (S0) to form an amplified received signal (S1). If necessary, the amplifier (AMP) also works as a filter, for example as a bandpass filter, which essentially only allows the frequencies of the modulation signal (S5) to pass. In the example of 17 a lock-in amplifier (LIA) or a synchronous demodulator or a matched filter or another estimation filter determines the value of the proportion of the modulation of the modulation signal (S5) or a signal derived from it in the signal modulation of the amplified received signal (S1) and forms a filter output signal (S4) or a value which corresponds to the preferred amplitude component of the modulation signal (S5) in the amplified received signal (S1). Alternatively or parallel lel can in the example der 17 the lock-in amplifier (LIA) or the synchronous demodulator or a matched filter or the other estimation filter the value of the time delay of the signal modulation of the amplified received signal (S1) compared to the modulation of the intensity of the pump radiation (LB) or compared to the modulation of the modulation signal (S5) or in relation to a signal derived therefrom and generate a delay value signal (S4') or another value which preferably corresponds to this time delay of the proportion of the modulation signal (S5) in the amplified received signal (S1) in relation to the modulation of the intensity of the pump radiation ( LB) or compared to the modulation of the modulation signal (S5) or compared to a signal derived therefrom. A second voltage regulator (SR2) preferably supplies the amplifier (AMP) and the lock-in amplifier (LIA) or the synchronous demodulator or the matched filter or the other estimation filter with electrical energy. The energy reserve supplies the second voltage regulator (SR2) with energy in the said first time periods, while in the second time periods the charging device (LDV) preferentially supplies the second voltage regulator (SR2) with energy. The computer core (CPU) preferably controls the amplifier (AMP) and the lock-in amplifier (LIA) or the synchronous demodulator or the matched filter or the other estimation filter.

The MEMS goniometer (MEMSG) manufactured in this way thus preferably comprises, as described, a frame (RM) made from a frame material, ie for example from monocrystalline silicon.

The MEMS goniometer (MEMSG) preferably comprises one or more first X actuators (CBDRV1x, CBDRV2x). These X-actuators can be, for example, a first so-called comb drive (CBDRV1x), which can drive a torsional movement about a first X-axis (AXx) by means of electrostatic forces, and a second so-called comb drive (CBDRV2x) act, which can drive a torsional movement about the first X-axis (AXx) by means of electrostatic forces.

The first X-axis comb drive (CBDRV1x) includes a left stator electrode (Elalx). An electrical trench isolation (TREN) and a buried second insulating layer (OX2) electrically insulate the left stator electrode (Elalx) from the frame (RM) and the intermediate wafer (Si1) (see 20 ). The X motor controller for the X axis (GDx) applies an electrical voltage between the left stator electrode (Elalx) and the left rotor electrode (Elblx) of the first X axis comb drive (CBDRV1x). The left rotor electrode (Elblx) of the first X-axis comb drive (CBDRV1x) is preferably at the same electrical potential as the frame (RM). The first X-axis comb drive (CBDRV1x) includes a right stator electrode (Ela2x). Electrical trench isolation (TREN) and a buried second insulating layer (OX2) electrically insulate the left stator electrode (Ela2x) from the frame (RM) and the intermediate wafer (Si1) (see 20 ). The X motor controller for the X axis (GDx) applies an electrical voltage between the right stator electrode (Ela2x) and the right rotor electrode (Elb2x) of the first X axis comb drive (CBDRV1x). The right rotor electrode (Elb2x) of the first X-axis comb drive (CBDRV1x) is preferably at the same electrical potential as the frame (RM). The air gap (AG1) between the first rotating body (Rx) and the frame (RM) of the MEMS goniometer (MEMSG) separates the left stator electrode (Elalx) of the first X-axis comb drive (CBDRV1x) from the left rotor electrode ( Elblx) of the first X-axis comb drive (CBDRV1x). The air gap (AG1) between the first rotating body (Rx) and the frame (RM) of the MEMS goniometer (MEMSG) separates the right stator electrode (Ela2x) of the first X-axis comb drive (CBDRV1x) from the right rotor electrode ( Elb2x) of the first X-axis comb drive (CBDRV1x). The air gap (AG1) between the first rotating body (Rx) and the frame (RM) of the MEMS goniometer (MEMSG) separates the left rotor electrode (Elblx) of the first X-axis comb drive (CBDRV1x) and the right rotor electrode ( Elb2x) of the first X-axis comb drive (CBDRV1x) from the intermediate wafer (Si1) or the handle wafer (Si0).

The second X-axis comb drive (CBDRV2x) includes a left stator electrode (Ela3x). An electrical trench isolation (TREN) and a buried second insulating layer (OX2) electrically insulate the left stator electrode (Ela3x) against the frame (RM) and the intermediate wafer (Si1) (see 20 ). The X motor controller for the X axis (GDx) applies an electrical voltage between the left stator electrode (Ela3x) and the left rotor electrode (Elb3x) of the second X axis comb drive (CBDRV2x). The left rotor electrode (Elb3x) of the second X-axis comb drive (CBDRV2x) is preferably at the same electrical potential as the frame (RM). The second X-axis comb drive (CBDRV2x) includes a right stator electrode (Ela4x). An electrical trench isolation (TREN) and a buried second insulating layer (OX2) electrically insulate the right stator electrode (Ela4x) against the frame (RM) and the intermediate wafer (Si1) (see 20 ). The X motor controller for the X axis (GDx) applies an electrical voltage between the right stator electrode (Ela4x) and the right rotor electrode (Elb4x) of the second X axis comb drive (CBDRV2x). The right rotor electrode (Elb4x) of the second X-axis comb drive (CBDRV2x) is preferably at the same electrical potential as the frame (RM). Of the Air gap (AG1) between the first rotating body (Rx) and the frame (RM) of the MEMS goniometer (MEMSG) separates the left stator electrode (Ela3x) of the second X-axis comb drive (CBDRV2x) from the left rotor electrode (Elb3x) of the second X-axis comb drive (CBDRV2x). The air gap (AG1) between the first rotating body (Rx) and the frame (RM) of the MEMS goniometer (MEMSG) separates the right stator electrode (Ela4x) of the second X-axis comb drive (CBDRV2x) from the right rotor electrode ( Elb4x) of the second X-axis comb drive (CBDRV2x). The air gap (AG1) between the first rotating body (Rx) and the frame (RM) of the MEMS goniometer (MEMSG) separates the left rotor electrode (Elb3x) of the second X-axis comb drive (CBDRV2x) and the right rotor electrode ( Elb4x) of the second X-axis comb drive (CBDRV2x) from the intermediate wafer (Si1) or the handle wafer (Si0).

The MEMS goniometer (MEMSG) preferably comprises one or more first Y actuators (CBDRV1y, CBDRV2y). These Y-actuators can be, for example, a first so-called comb drive (CBDRV1y), which can drive a torsional movement about a second Y-axis (AXy) by means of electrostatic forces, and a second so-called comb drive (CBDRV2y) act, which can drive a torsional movement around the second Y-axis (AXy) by means of electrostatic forces.

The first Y-axis comb drive (CBDRV1y) includes a top stator electrode of the first Y-axis comb drive (CBDRV1y). An electrical trench isolation (TREN) and a buried second insulating layer (OX2) electrically insulate the upper stator electrode (Elaly) against the frame (RM) and the intermediate wafer (Si1) (see 20 ). The Y motor controller for the Y axis (GDy) applies an electrical voltage between the upper stator electrode (Elaly) and the upper rotor electrode (Elbly) of the first Y axis comb drive (CBDRV1y). The upper rotor electrode (Elbly) of the first Y-axis comb drive (CBDRV1y) is preferably at the same electrical potential as the frame (RM). The first Y-axis comb drive (CBDRV1y) includes a lower stator electrode (Ela2y). An electrical trench isolation (TREN) and a buried second insulating layer (OX2) electrically insulate the lower stator electrode (Ela2y) against the frame (RM) and the intermediate wafer (Si1) (see 20 ). The Y motor controller for the X axis (GDy) applies an electrical voltage between the lower stator electrode (Ela2y) and the lower rotor electrode (Elb2y) of the first Y axis comb drive (CBDRV1y). The lower rotor electrode (Elb2y) of the first Y-axis comb drive (CBDRV1y) is preferably at the same electrical potential as the frame (RM). The air gap (AG1) between the first rotating body (Rx) and the frame (RM) of the MEMS goniometer (MEMSG) separates the left stator electrode (Elalx) of the first X-axis comb drive (CBDRV1x) from the left rotor electrode ( Elblx) of the first X-axis comb drive (CBDRV1x). The air gap (AG2) between the second rotating body (Ry) and the first rotating body (Rx) of the MEMS goniometer (MEMSG) separates the lower stator electrode (Ela2y) of the first Y-axis comb drive (CBDRV1y) from the lower rotor electrode ( Elb2y) of the first Y-axis comb drive (CBDRV1y). The air gap (AG2) between the second rotating body (Ry) and the first rotating body (Rx) of the MEMS goniometer (MEMSG) separates the upper rotor electrode (Elbly) of the first Y-axis comb drive (CBDRV1y) and the lower rotor electrode ( Elb2y) of the first Y-axis comb drive (CBDRV1y) from the intermediate wafer (Si1) or the handle wafer (Si0).

The second Y-axis comb drive (CBDRV2y) includes a top stator electrode (Ela3y). An electrical trench isolation (TREN) and a buried second insulating layer (OX2) electrically insulate the upper stator electrode (Ela3y) against the frame (RM) and the intermediate wafer (Si1) (see 20 ). The Y motor controller for the Y axis (GDy) applies an electrical voltage between the upper stator electrode (Ela3y) and the upper rotor electrode (Elb3y) of the second Y axis comb drive (CBDRV2y). The upper rotor electrode (Elb3y) of the second Y-axis comb drive (CBDRV2y) is preferably at the same electrical potential as the frame (RM). The second Y-axis comb drive (CBDRV2y) includes a lower stator electrode (Ela4y). An electrical trench isolation (TREN) and a buried second insulating layer (OX2) electrically insulate the lower stator electrode (Ela4y) against the frame (RM) and the intermediate wafer (Si1) (see 20 ). The Y motor controller for the Y axis (GDy) applies an electrical voltage between the lower stator electrode (Ela4y) and the lower rotor electrode (Elb4y) of the second Y axis comb drive (CBDRV2y). The lower rotor electrode (Elb4y) of the second Y-axis comb drive (CBDRV2y) is preferably at the same electrical potential as the frame (RM). The air gap (AG2) between the second rotating body (Ry) and the first rotating body (Rx) of the MEMS goniometer (MEMSG) separates the upper stator electrode (Ela3y) of the second Y-axis comb drive (CBDRV2y) from the upper rotor electrode ( Elb3y) of the second Y-axis comb drive (CBDRV2y The air gap (AG2) between the second rotating body (Ry) and the first rotating body (Rx) of the MEMS goniometer (MEMSG) separates the lower stator electrode (Ela4y) of the second Y- Axis comb-drives (CBDRV2y) from the lower rotor electrode (Elb4y) of the second Y-axis comb-drive (CBDRV2y).The air gap (AG2) between the second rotating body (Ry) and the first rotating body (Rx) of the MEMS goniometer (MEMSG) separates the upper rotor electrode (Elb3y) of the second Y-axis comb drive (CBDRV2x) and the lower rotor electrode (Elb4y) of the second Y-axis comb drive (CBDRV2y) from the intermediate wafer (Si1) or the handle wafer ( Si0).

Storage of the rotary body

The first X-axis (AXx) and the second Y-axis (AXy) are preferably not parallel. The first X-axis (AXx) and the second Y-axis (AXy) are preferably oriented perpendicular to one another. The first X axis (AXx) is preferably oriented parallel to the surface of the MEMS goniometer (MEMSG), which preferably forms the surface of the device wafer (Si2). The second Y axis (AXy) is preferably oriented parallel to the surface of the MEMS goniometer (MEMSG), which preferably forms the surface of the device wafer (Si2). The MEMS goniometer (MEMSG) can have a third Z-actuator if required. This third Z-actuator can be, for example, a third so-called comb drive (CBDRV1x), which uses electrostatic forces to create a rotational movement about a third Z-axis (AXz), which is perpendicular to the surface of the MEMS goniometer (MEMSG). can, can drive. The third Z-actuator can typically drive the rotational movement around the third Z-axis (AXz) by means of electrostatic forces. The MEMS goniometer (MEMSG) preferably has a first rotary body (Rx) that is mounted so that it can rotate about the first X axis (AXx). This first rotating body (Rx) is preferably connected to the frame (RM) rotatably about the first X-axis (AXx) by means of a first bearing or a first spring (GR1x) of the first X-axis (AXx). Very particularly preferably, this first rotating body (Rx) is additionally connected to the frame (RM) rotatably about the first X-axis (AXx) by means of a second bearing or a second spring (GR2x) of the first X-axis (AXx). These first actuators (CBDRV1x, CBDRV2x) can rotate the first rotary body (Rx) about the first X-axis (AXx) relative to the frame (RM).

Crystal (HDNV)

The crystal (HDNV) with the paramagnetic centers is mechanically firmly connected to the first rotating body (RX) preferably via the second rotating body (Ry) and possibly a third rotating body (Rz) that is not shown. The crystal (HDNV) preferably comprises at least one paramagnetic center and/or more paramagnetic centers and/or a pair of paramagnetic centers and/or a plurality of pairs of paramagnetic centers and/or one or more paramagnetic centers attached to nuclear spins of atoms in the vicinity of these paramagnetic centers, and/or one or more pairs of coupled paramagnetic centers that are coupleable to nuclear spins of atoms in the vicinity of these pairs of paramagnetic centers. In a development, the crystal (HDNV) comprises a diamond crystal, the diamond crystal (HDNV) having one or more paramagnetic centers, in particular one or more NV centers and/or one or more ST1 centers and/or one or more TR12 centers and/or one or more SiV centers and/or one or more GeV centers and/or one or more coupled NV center pairs and/or one or more coupled ST1 center pairs and/or one or more coupled TR12 centers -center pairs and/or one or more SiV center pairs and/or one or more GeV center pairs and/or one or more pairs of coupled paramagnetic centers. In a further development, the MEMS goniometer (MEMSG) has one or more second actuators (CBDRV1y, CBDRV2y). In this case, the MEMS goniometer (MEMSG) preferably has a second rotary body (Ry) which is mounted such that it can rotate about a second Y axis (AXy). The second rotating body (Ry) is preferentially opposed to the first rotating body by means of a second Y-axis (AXy) first bearing or spring (GR1y) and a second Y-axis (AXy) second bearing or spring (GR2y). (Rx) rotatable about the second Y-axis (AXy) and with the first rotary body (Rx) by means of a first bearing or spring (GR1y) of the second Y-axis (AXy) and a second bearing or spring (GR2y ) of the second Y-axis (AXy) preferably mechanically firmly connected. The second actuators (CBDRV1y, CBDRV2y) can preferably twist the second rotating body (Ry) about the second Y axis (AXy) relative to the first rotating body (Rx). In this case, the crystal (HDNV) is preferably mechanically firmly connected to the second rotary body (Ry). The crystal (HDNV) is mechanically firmly connected to the first rotating body (RX) via the second rotating body (Ry), preferably particularly preferably by means of gluing with an adhesive (GL). Soldering with a solder (GL) is also conceivable. The crystal (HDNV) is preferably mechanically firmly connected to the frame (RM) via the first rotary body (RX) and via the second rotary body (Ry). The second rotary body (Rx) preferably has a depression (VT) into which the crystal (HDNV) is introduced.

The second rotating body (Ry) preferably has one or more magnetic field generating device parts (MG). This can involve, for example, ferromagnetic structures which are etched out of a ferromagnetic layer and which are pre-magnetized.

In a further development, the MEMS goniometer (MEMSG) has one or more third actuators (CBDRV1z, CBDRV2z). In this case, the MEMS goniometer (MEMSG) preferably has a third rotary body (Rz) mounted so that it can rotate about a third Z axis (AXz). In that case, the third rotating body (Rz) is preferably connected to the third Z-axis (AXz) by means of a first bearing or spring (GR1z) and a second bearing or spring (GR2z) to the third Z-axis (AXz). connected to the second rotary body (Ry) rotatably about the third Z-axis (AXz). In this case, preferably third actuators (CBDRV1z, CBDRV2z) can twist the third rotary body (Rz) about the third Z axis (AXz) relative to the second rotary body (Ry) about the third Z axis (AXz). In this case, the crystal (HDNV) is instead preferably mechanically firmly connected to the third rotary body (Rz) and not directly to the second rotary body (Ry). However, the crystal (HDNV) is mechanically fixed indirectly to the second rotating body (Ry) via the third rotating body (Rz), since the third rotating body (Rz) is fixedly and rotatably connected to the second rotating body (Ry) preferentially. The crystal (HDNV) is then also mechanically fixed and rotatably connected to the first rotating body (RX) via the second rotating body (Ry) and via the third rotating body (Rz). Ultimately, the crystal (HDNV) is thus preferably again mechanically fixed to the frame (RM) via the first rotating body (RX) and via the second rotating body (Ry) and via the third rotating body (Rz) and rotatably connected about three axes.

After the wafer manufacturing process has been carried out, a so-called sawing process then separates the MEMS goniometers (MEMSG), which were still combined in the wafer assembly during the manufacturing process, into individual MEMS goniometers (MEMSG). An assembly process then glues or solders these isolated MEMS goniometers (MEMSG) to a mounting surface of a leadframe of a housing (GH) using an adhesive or a solder. The housing (GH) is preferably an open-cavity housing. The document presented here refers to the international application WO 2021 013 308 A1 (PCT/ DE2020/100 648 ), the disclosure content of which is a complete part of the disclosure presented here, to the extent permitted by the respective national law.

the 17 until 19 are schematically simplified and not to scale. The wiring and internal structure of the blocks have been omitted for simplicity. Only the most important blocks are in the 17 until 19 shown.

Figures 20, 21 and 22

20 and 21 shows such an exemplary micromechanical alignment device (MEMSG) of FIG 17 until 18 to align the crystals (HDNV) within the housing (GH) in cross section. The cutting lines are in the 17 until 18 marked. Such an alignment device preferably comprises a MEMS goniometer (MEMSG). This means that the proposed device preferably comprises a micromechanical device that can serve as an alignment device. The device typically further comprises a crystal (HDNV) having paramagnetic centers and/or pairs of coupled paramagnetic centers and/or clusters of paramagnetic centers and/or clusters of coupled pairs of paramagnetic centers. The document presented here refers to the above statements in this regard. The proposed MEMS goniometer (MEMSG) is preferably manufactured in a microlithographic process. The basis of the MEMS goniometer (MEMSG) is typically a wafer, on and in which a MEMS manufacturing process of the MEMS goniometer (MEMSG) typically produces a large number of MEMS goniometers (MEMSG) in parallel. The wafer is preferably a semiconductor wafer. The semiconductor wafer is very particularly preferably a silicon or germanium or SiC wafer or a wafer made from a semiconductor material with a direct band transition. The wafer is particularly preferably an SOI wafer (Silicon On Insulator) which is made up of a number of wafers which are connected to one another by one or more insulating layers (OX1, OX2). The wafer particularly preferably comprises a first wafer (Si0), which this document also refers to as a handle wafer (Si0) below. The handle wafer (Si0) is in the example 20 provided with a first insulating layer (OX1). The wafers are preferably monocrystalline. The handle wafer (SiO) is preferably a monocrystalline wafer. The handle wafer (Si0) is, for example, preferably a wafer made from a semiconductor material. The handle wafer (SiO) is, for example, very particularly preferably a silicon wafer. Less preferably, the handle wafer (SiO) is a SiC or a III/V material wafer or the like. A second wafer, the intermediate wafer (Si1) is in the example 20 attached to the surface of the handle wafer (Si0). The intermediate wafer (Si1) is in the example 20 provided with a second insulating layer (OX2). The intermediate wafer (Si1) is preferably a monocrystalline wafer. The intermediate wafer (Si1) is, for example, preferably a wafer made from a semiconductor material. The intermediate wafer (Si1) is, for example, very particularly preferably a silicon wafer. Less preferably, the intermediate wafer (Si1) is a SiC or a III/V material wafer or the like. The intermediate wafer preferably has a thickness of less than 100 μm and/or better less than 50 μm and/or better less than 20 μm and/or better less than 10 μm and/or better less than 5 μm. If the intermediate wafer is too thin, the mechanical stability suffers. If the mass is too large, the mechanical dynamics are reduced because the mass of the first rotating body (Rx) increases. A third wafer, the device wafer (Si2) is in the example 20 fixed on the surface of the intermediate wafer (Si01). The attachment is preferably done by bonding.

Typically, the first insulation layer (OX1) as a SiO ₂ layer connects the handle wafer (Si0) to the intermediate wafer (Si1). The intermediate wafer (Si1) is therefore typically bonded to the handle wafer (Si0). In part, the first insulating layer (OX1) serves as a sacrificial layer during fabrication of the exemplary MEMS goniometer (MEMSG). A preferably wet-chemical or gas-chemical etching process removes parts of the first insulation layer (OX1) and attacks the other components of the MEMS goniometer (MEMSG) as little as possible or as little as possible. In this way, the manufacturing process produces parts of a first air gap (AG1) that separates a frame (RM) of the MEMS goniometer (MEMSG) from the first rotating body (RX), so that the first rotating body (RX) faces the frame (RM) of the MEMS goniometer (MEMSG) about a first X-axis (AXx) is limited in rotation.

Typically, the second insulation layer (OX2) as a SiO ₂ layer connects the intermediate wafer (Si1) to the device wafer (Si2). The device wafer (Si2) is therefore typically bonded to the intermediate wafer (Si1). In part, the second insulating layer (OX2) serves as a sacrificial layer during fabrication of the exemplary MEMS goniometer (MEMSG). A preferably wet-chemical or gas-chemical etching process removes parts of the second insulation layer (OX2) and attacks the other components of the MEMS goniometer (MEMSG) as little as possible or as little as possible. In this way, the manufacturing process creates parts of a second air gap (AG2) that separates the first rotating body (RX) of the MEMS goniometer (MEMSG) from a second rotating body (RY) so that the second rotating body (RY) rotates by a second Y- Axis (AXy) is limited relative to the first rotary body (RX) of the MEMS goniometer (MEMSG) rotatable. The manufacturing process includes steps to etch through the device wafer (S2), the intermediate wafer (S1) and the second insulating layer (OX2) in order to access the etchant to the sacrificial layers and to detach the rotary bodies (RX, RY) from the frame (RM) or the other rotary body (RX) to ensure.

The second rotating body (Ry) has etching holes (EH) which serve to ensure that the undercutting of the second insulating layer (OX2) is sufficient to separate the second rotating body (Ry) and the first rotating body (Rx).

20 shows a schematic section along the line A, A' which is not true to scale 17 .

21 shows a schematic section along the line BB' which is not to scale 17 .

22 equals to 21 with the difference that the diamond (DIA) has only one HD-NV diamond area (HDNV). The HD-NV diamond area has the characteristics of a HD-NV diamond as used herein.

An HD-NV diamond (HDNV) or an HD-NV diamond area in the sense of the document presented here comprises a high density of NV centers or a high density of NV center pairs of two coupled NV centers. The HD-NV diamond (HDNV) is typically intended for use in a quantum technological device and/or method. A prominent feature among others is that the fluorescence intensity curve of the fluorescence intensity value of the intensity of the fluorescence radiation (FL) of the NV center pair as a function of the magnetic flux density B upon irradiation with a pump radiation (LB) with a pump radiation wavelength (λ _pmp ) as a function of the value the magnetic flux density (B) of a magnetic field external to the HD-NV diamond a typical intensity drop (dip) of the fluorescence intensity value of the intensity of the fluorescence radiation (FL) of more than 2% and/or more than 5% at a point on the external magnetic flux density (B) of about 59.5mT (E _59.1.0 ) acting on diamonds, which indicates an NV-NV interaction and thus a small mean distance between the NV centers of the NV center pair.

Another salient feature of an HD-NV diamond or HD-NV diamond region may be that the fluorescence retardation curve of the fluorescence retardation value of the time delay of the modulation of the intensity of the fluorescence radiation (FL) of the NV center pair versus the modulation of the pump radiation ( LB) or the modulation of the modulation signal (S5) or the modulation of a signal derived therefrom when irradiated with a pump radiation (LB) with a pump beam lation wavelength (λ _pmp ) as a function of the value of the magnetic flux density (B) of a magnetic field external to the HD-NV diamond or the HD-NV diamond region, a typical increase in the fluorescence delay value of the time delay of the modulation of the intensity of fluorescence radiation (FL) of more than 2% and/or of more than 5% at an external magnetic flux density (B) acting on the diamond of about 59.5mT (E _59.1.0 ) indicating a NV-NV Interaction and thus a small mean distance between the NV centers of the NV center pair.

figure 23

23 essentially corresponds to the 17 . the 23 shows again an exemplary MEMS dual circuit goniometer (MEMSG) with a crystal (HDNV) with paramagnetic centers. As before, the MEMS goniometer (MEMSG) can orient the crystal relative to a case (GH) or the direction of magnetic flux density B of a magnetic field B by rotations about a first X-axis (AXx) and/or a second Y-axis (AXy ) relay a message. The device of 23 has the necessary controls, drivers and micromechanical drives and auxiliary devices. The section described here refers to the description of the 17 until 22 , which also apply here in an analogous way. The exemplary arrangement of the device 23 however, in contrast to the arrangement of 17 until 22 no pump radiation source (LD) on. The pump radiation source (LD) is therefore preferably arranged externally and irradiates the device 23 from external with pump radiation (LB). However, the driver circuit (LDDRV) for the pump radiation source (LD) and the control device for the pump radiation source (LD) are preferably part of the co-integrated MEMS goniometer (MEMSG). It can be expedient if the power transistors of the output stage of the driver circuit (LDDRV) for controlling the pump radiation source (LD) are arranged externally to the MEMS goniometer (MEMSG). The following 24 and 25 show an exemplary arrangement of an external pump radiation source (LD) that can irradiate the paramagnetic centers of the crystal (HDNV) in the center of the MEMS goniometer (MEMSG) from above with pump radiation (LD) of the pump radiation wavelength (λ _pmp ). The exemplary MEMS goniometer (MEMSG) of 23 therefore has no pump radiation source (LD) and no first optical waveguide (LWL1) from the pump radiation source (LD) to the crystal (HDNV) with the paramagnetic centers. Instead, the MEMS goniometer (MEMSG) has a Z magnetic field generator coil (MGz) for generating a magnetic flux density B in the Z direction. The Z magnetic field controller (MFSz) of the magnetic flux density B in the Z direction energizes the Z magnetic field generator coil (MGz) with an electric current to generate a magnetic flux density B in the Z direction. This enables the Z magnetic field generator coil (MGz) to have a suitable bias Set the field as the magnetic flux density at the location of the paramagnetic centers of the crystal (HDNV) in the Z direction.

figure 24

24 equals to 22 . the 24 clarifies in a schematically simplified manner and not true to scale how an external pump radiation source (LD) irradiates the crystal (HDNV) with pump radiation (LB) of the pump radiation wavelength (λ _pmp ) by means of an optical system (OSYS). The MEMS goniometer (MEMSG) preferably controls the pump radiation source (LD) by means of a modulation signal (S5) from the MEMS goniometer (MEMSG). The example of 24 shows a diamond (slide) with a HD-NV diamond area (HDNV) as an example as a crystal (HDNV) on the MEMS goniometer in FIG 22 .

figure 25

25 essentially corresponds to the 24 , where the HD-NV diamond domain (HDNV) is replaced by single paramagnetic centers, namely a first paramagnetic center (NV1) and a second paramagnetic center (NV2).

figure 26

26 shows the cut of 24 with a first optical fiber (LWL1) and a second optical fiber (LWL2) instead of just one optical fiber (LWL1).

figure 27

27 shows the cut of the 25 without pump radiation source (LD) and optical system (OSYS).

figure 28

28 shows the use of the proposal for building the MEMS goniometer (MEMSG) into a housing. (GH). The housing (GH) is preferably a so-called open-cavity housing with a cavity (CAV) into which the MEMS goniometer (MEMSG) is inserted. For this purpose, the MEMS goniometer (MEMSG) is attached by means of an adhesive (GL) to a connecting surface (VF) between the respective crystal of the respective quantum technological device and the respective housing (GH) of the respective quantum technological device within the cavity (CAV) of the housing (GH ) attached. the 28 shows the MEMS goniometer (MEMSG) as an example 27 . The housing (GH) has connections (AN) on the bottom surface and a die island (DI) for mounting the MEMS goniometer (MEMSG) by means of an adhesive (GL). The Die-Island of 27 is a so-called exposed die pad that allows electrical contacting of the handle wafer (Si0) of the MEMS goniometer (MEMSG) via a conductive adhesive (GL).

Both the connections (AN) and the die island (DI) have a typically metallic and electrically conductive underside, which in each case forms an electrical connection area (AF). The connection areas (AF) are preferably in a mounting area.

The mounting surface of the pads (AF) has a first surface normal (FNAN) which, by definition, is perpendicular to the mounting surface of the pads (AF).

The connecting surface (VF) between the respective crystal of the respective quantum technological device and the respective housing (GH) of the respective quantum technological device within the cavity (CAV) of the housing (GH) has a second surface normal (FNDI). This surface normal (FNDI) is by definition perpendicular to the bond surface (VF).

Bond wires (BO) electrically connect the terminals (AN) of the housing (GH) to the bond pads of the MEMS goniometer (MEMSG).

The arrangement of 28 shows the proposed calibration of the MEMS goniometer (MEMSG).

During calibration, an electrical test system contacting the housing (GH) electrical terminals causes the MEMS goniometer (MEMSG) to assume various angular positions. The test device preferably has a magnetic field generator that generates a magnetic flux density B with a direction of the magnetic flux density B parallel to the first surface normal (FNAN) or parallel to the second surface normal (FNDI).

The magnitude of the magnetic flux density B is preferably chosen to correspond to the characteristic flux density B of a fluorescent feature of the crystal (HDNV).

The test system now causes the MEMS goniometer (MEMSG) to tilt systematically by different angles. When the crystal direction (HDNV) is aligned in the correct way, the fluorescence emission (FL) from the crystal (HDNV) shows a fluorescent feature.

This completes the alignment process. The test device then programs the setting parameters of the MEMS goniometer (MEMSG) for precisely this alignment of the crystal, preferably in the non-volatile memory (NVM) of the MEMS goniometer (MEMSG) or makes these values available when the MEMS goniometer (MEMSG) is delivered .

In the example of 28 the crystal (HDNV) is a crystal with paramagnetic centers, which calibrates the MEMS goniometer (MEMSG) relative to the housing. The document presented here recommends using an alignment shoe to glue the crystal in place (HDNV) in such a way that one or more paramagnetic centers of the crystal and/or a DH-NV diamond area of a diamond as a crystal are already visible when irradiated with pump radiation (LB) exhibit a fluorescent feature during gluing. In this case, it is favorable if the alignment shoe can rotate the crystal by two rotational degrees of freedom during gluing and can thus orientate the crystal precisely during gluing.

figure 29

After calibrating the orientation of the crystal (HDNV) by the MEMS goniometer (MEMSG), the housing of the 28 closed with a lid (DE).

figure 30

30 equals to 28 , where the crystal now has a region of high density of paramagnetic centers. In the example of 30 it is a diamond (dia) with an HD-NV diamond range (HDNV).

figure 31

31 equals to 29 , where the crystal now has a region of high density of paramagnetic centers. In the example of 30 it is a diamond (dia) with an HD-NV diamond range (HDNV).

figure 32

the 32 essentially corresponds to the 29 . Now, however, the cover (DE) is provided with a pump radiation source (LD), which can irradiate the crystal (HDNV) with pump radiation (LB) from above. The cover (DE) of the housing (GH) is preferably a printed circuit board (PCB=printed circuit board).

Figure 33

33 shows a Hall plate (HAL) in a semiconductor substrate (sub) in a schematic cross section that is not true to scale. The Hall plate (HAL) is preferably a low-doped, as thin as possible semiconducting layer of a first conductivity type in a semiconducting substrate (sub) of another, second conductivity type. A first contact (K1) and a second contact (K2) and typically two other contacts in the 33 perpendicular to the image plane would typically be arranged above and below the image plane, contact the Hall plate (HAL) electrically. We refer here as an example to the DE 1474 100A , EP 3 427 469 B1 and the website https://de.wikipedia.org/wiki/Hall-Effect.

The Hall plate is preferably manufactured in the center of the MEMS goniometer below the crystal (HDNV). In the preceding views, the Hall plate is usually not drawn in, since the second rotating body (Ry) has a depression (VF) there for receiving the crystal (HDNV).

figure 34

34 shows a MEMS goniometer with a Hall plate (HAL) instead of the recess (VT).

The driver circuitry for the Hall plate is typically part of the Hall control and evaluation circuitry (HALC).

figure 35

35 shows an exemplary coupling of an atomic clock with a waveform generator (WFG) for generating a modulation signal (S5) of particularly high precision. In the specific case, the document presented here proposes a waveform generator (WFG) with an atomic clock (ATC) as the time base of the clock generator (OSZ) of the waveform generator (WFG). In the present example, such an exemplary embodiment of the device for controlling paramagnetic centers includes the atomic clock (ATC), which serves as a frequency standard and provides a reference frequency signal (RefSig) as a reference frequency, the WFG time base, which adapts this reference signal to the requirements of the waveform generator (WFG) and supplies the basic clock for the waveform generator (WFG), the waveform generator which, on this basis, supplies the control signals for driving the paramagnetic centers of the crystal (HDNV). The document presented here thus proposes a waveform generator system for controlling the paramagnetic centers which has a particularly high level of precision. The atomic clock (ATC) can be remote from the device with the crystal (HDNV) with the paramagnetic centers and coupled to it via a transmission channel (TXL) for the reference frequency signal (RefSig), not further specified here. For example, an exemplary atomic clock (ATC) is from the Scriptures EP 3 745 216 B1 known. The atomic clock (ATC) delivers before supplies a reference frequency signal (RefSig). This reference frequency signal (RefSig) is particularly accurate and preferably has a reference frequency. The paper presented here therefore proposes a waveform generator system with a waveform generator (WFG) and an atomic clock (ATC). The atomic clock (ATC) generates a reference frequency signal (RefSig). The atomic clock (ATC) can transmit the reference frequency signal (RefSig) wired and/or wireless to the waveform generator (WFG). The waveform generator (WFG) includes a time base (TB). The time base (TB) generates a frequency signal (FS). The time base (TB) of the waveform generator (WFG) is synchronized with the reference frequency signal (RefSig). This means that the frequencies of the reference frequency signal (RefSig) and the frequency signal (FS) are in a ratio to one another that can be described as a fraction of two whole positive numbers a and b and that the frequency value of the frequency signal (FS) is divided by the frequency value of the reference frequency signal (RefSig) is equal to the value of the fraction of a divided by b. The waveform generator (WFG) generates a modulation signal (S5) depending on the time base and thus depending on the reference frequency signal (RefSig). This generation of the modulation signal (S5) is based on the frequency signal (FS). The modulation signal (S5) or a signal derived from it is then used to control at least one quantum dot or one or more paramagnetic centers. The time base preferably includes an oscillator (OSZ), a first divider (DV1), a second divider (DV2), a controller (CTR) and a phase detector (PHD). The frequency of the oscillator (OSZ) depends on the value of a control signal (STS). The oscillator (OSZ) generates the frequency signal (FS). The first divider (DV1) generates a divided frequency signal (DFS) from the frequency signal (FS). The second divider (DV2) generates a divided reference frequency signal (DRefSig) from the reference frequency signal (RefSig). The phase detector (PHD) compares the divided frequency signal (DFS) with the divided reference frequency signal (DRefSig) and generates a phase difference signal (PHDS). The controller (CTR) generates the control signal (STS) from the phase difference signal (PHDS). The waveform generator (WFG) generates the modulation signal (S5) as a function of the frequency signal (FS). For example, a counter (CNTR) can count the pulses or zero crossings of the frequency signal (FS) and generate a memory address (ADR). A memory (MEM) returns the value (Val) it has at that memory address (ADR). An analog-to-digital converter (ADC) then generates the modulation signal (S5) from the value (Val). The proposed device then uses this modulation signal (S5) to modify the quantum mechanical state of one or more quantum bits or one or more paramagnetic centers. In particular, the proposed device can then use this modulation signal (S5) to modify the quantum mechanical state of one or more NV centers in diamond.

The MEMS goniometer (MEMSG) described here by way of example preferably comprises the circuits for communication with the atomic clock (ATC) and for receiving the reference frequency signal (RefSig) by the MEMS goniometer.

Reference List

ADC

analog to digital converters;

ADR

memory address;

AF

land of terminal (AN) of housing (GH);

Inc

air gap;

AG1

Air gap between the first rotating body (Rx) and the frame (RM) of the MEMS goniometer (MEMSG);

AG2

Air gap between the second rotating body (Ry) and the first rotating body (Rx) of the MEMS goniometer (MEMSG);

ON

electrical connection of the housing (GH);

AMP

Amplifier;

ATC

atomic clock;

AXx

X-axis of the goniometric positioning device (goniometer (MEMSG));

AXy

Y-axis of the goniometric positioning device (goniometer (MEMSG));

AXz

Z-axis of the goniometric positioning device (goniometer (MEMSG));

B

magnetic flux density;

B0

magnetic offset flux density;

BD

a radiation-opaque lacquer layer (BD) or functionally equivalent device part;

text

external magnetic flux density;

e.g

total magnetic flux density;

BENG

external energy reserve or energy reserve of the quantum technological device. The energy reserve can be, for example, a coil, a capacitor, an accumulator, a chargeable battery or the like. In the first periods, the energy reserve preferably supplies sensitive parts of the device, such as the waveform generator (WFG), the driver (LDDRV) for the pump radiation source (LD), the amplifier (AMP) and the lock-IN amplifier (LIA) and the like with the associated Voltage regulators (SR2, SR3) with high quality, low-noise electrical energy;

BENGIF

Interface for connecting the external energy reserve (BENG);

CAV

cavity of the open-cavity package (GH). In the manufacturing process, the open-cavity housing preferably has an access opening through which the assembly, for example of the MEMS goniometer (MEMSG) in the cavity (CAV), can take place.

CBDRV1x

first X-axis comb drive (= first electrostatic torsion motor for the X-axis [AXx]);

CBDRV2x

second X-axis comb drive (= second electrostatic torsion motor for the X-axis [AXx]);

CBDRV1y

first Y-axis comb drive (= first electrostatic torsion motor for the Y-axis [AXy]);

CBDRV2y

second Y-axis comb drive (= second electrostatic torsion motor for the Z-axis [AXy]);

CBDRV1z

first Z-axis comb drive (= first electrostatic torsion motor for the Y-axis [AXz]);

CBDRV2z

second Z-axis comb drive (= second electrostatic torsion motor for the Z-axis [AXz]);

CLK

clock generator;

CNTR

Counter;

CPU

Computer core of the control device (STV);

ctr

Waveform Generator (WFG) Time Base (TB) controls. It is preferably a PI or PID controller or the like.

DBS

dichroic beam splitter;

DBIF

Data bus interface to the external data bus (EXTDB);

DFS

divided frequency signal;

TUE

The island in the bottom surface of the housing (GH) for mounting the example MEMS goniometer (MEMSG) by gluing with an adhesive (GL) or a solder. It is preferably a metal surface for mounting the exemplary semiconductor crystal of the exemplary MEMS goniometer (MEMSG) by means of adhesion using an adhesive (GL) or a solder;

SLIDE

Diamond;

DMT

Diamond holder for the diamond (HDNV) with the paramagnetic centers or the HD-NV diamonds the crystal with the paramagnetic centers. In this document, the term diamond holder (DMT) is synonymous with the term second rotating body (Ry);

DRefSig

divided reference frequency signal;

DV1

first divider of the time base (TB) of the waveform generator (WFG);

DV2

second divider of the time base (TB) of the waveform generator (WFG);

E0.0,0

Main fluorescence feature of an exemplary HDNV diamond (HDNV) at a magnetic flux density of approximately 0.00 mT. It is typically an intensity minimum and a delay maximum of the fluorescence radiation (FL) of the HD-NV diamond (HDNV);

E0.0,1b

first upper minor fluorescence feature of the 0.0mT main fluorescence feature (E _0.0.0 ) of an exemplary HDNV diamond (HDNV) at a magnetic flux density of about 2.10 mT. It is typically an intensity maximum and a delay minimum of the fluorescence radiation (FL) of the HD-NV diamond (HDNV);

E0.0.2b

second upper secondary fluorescence feature of the 0.0mT main fluorescence feature (E _0.0.0 ) of an exemplary HDNV diamond (HDNV) at a magnetic flux density of approx. 3.80 mT. It is typically an intensity maximum and a delay minimum of the fluorescence radiation (FL) of the HD-NV diamond (HDNV);

E0.0.3b

third upper secondary fluorescence feature of the 0.0mT main fluorescence feature (E _0.0.0 ) of an exemplary HDNV diamond (HDNV) at a magnetic flux density of approx. 5.30 mT. It is typically an intensity maximum and a delay minimum of the fluorescence radiation (FL) of the HD-NV diamond (HDNV);

E9.5.8a

eighth lower minor fluorescent feature of the 9.5 mT major fluorescent feature (E _9.5.0 ) of an exemplary HDNV diamond (HDNV) at a magnetic flux density of ca. 5.91 mT. It is typically an intensity maximum and a delay minimum of the fluorescence radiation (FL) of the HD-NV diamond (HDNV);

E9,5,7a

seventh lower secondary fluorescence feature of the 9.5 mT main fluorescence feature (E _9.5.0 ) of an exemplary HDNV diamond (HDNV) at a magnetic flux density of approx. 6.70 mT. It is typically an intensity maximum and a delay minimum of the fluorescence radiation (FL) of the HD-NV diamond (HDNV);

E9.5.6a

sixth lower minor fluorescent feature of the 9.5 mT major fluorescent feature (E _9.5.0 ) of an exemplary HDNV diamond (HDNV) at a magnetic flux density of approximately 6.95 mT. It is typically an intensity minimum and a delay maximum of the fluorescence radiation (FL) of the HD-NV diamond (HDNV);

E9.5.5a

fifth lower minor fluorescent feature of the 9.5 mT major fluorescent feature (E _9.5.0 ) of an exemplary HDNV diamond (HDNV) at a magnetic flux density of approximately 7.21 mT. It is typically an intensity maximum and a delay minimum of the fluorescence radiation (FL) of the HD-NV diamond (HDNV);

E9.5.4a

fourth lower minor fluorescent feature of the 9.5 mT major fluorescent feature (E _9.5.0 ) of an exemplary HDNV diamond (HDNV) at a magnetic flux density of approximately 7.85 mT. It is typically an intensity minimum and a delay maximum of the fluorescence radiation (FL) of the HD-NV diamond (HDNV);

E9.5.3a

third lower minor fluorescent feature of the 9.5 mT major fluorescent feature (E _9.5.0 ) of an exemplary HDNV diamond (HDNV) at a magnetic flux density of about 8.12 mT. It is typically an intensity maximum and a delay minimum of the fluorescence radiation (FL) of the HD-NV diamond (HDNV);

E9.5.2a

second lower minor fluorescent feature of the 9.5 mT major fluorescent feature (E _9.5.0 ) of an exemplary HDNV diamond (HDNV) at a magnetic flux density of approximately 8.43 mT. It is typically an intensity minimum and a delay maximum of the fluorescence radiation (FL) of the HD-NV diamond (HDNV);

E9.5.1a

first lower minor fluorescent feature of the 9.5 mT major fluorescent feature (E _9.5.0 ) of an exemplary HDNV diamond (HDNV) at a magnetic flux density of approximately 8.82 mT. It is typically an intensity maximum and a delay minimum of the fluorescence radiation (FL) of the HD-NV diamond (HDNV);

E9.5.0

Main fluorescence feature of an exemplary HDNV diamond (HDNV) at a magnetic flux density of ca. 9.38 mT. It is typically an intensity minimum and a delay maximum of the fluorescence radiation (FL) of the HD-NV diamond (HDNV). The value of 9.38mT comes from the 10 ;

E9.5.1b

first upper minor fluorescence feature of the 9.5 mT main fluorescence feature (E _9.5.0 ) of an exemplary HDNV diamond (HDNV) at a magnetic flux density of about 10.05 mT. It is typically an intensity maximum and a delay minimum of the fluorescence radiation (FL) of the HD-NV diamond (HDNV);

E9.5.2b

second upper minor fluorescence feature of the 9.5 mT main fluorescence feature (E _9.5.0 ) of an exemplary HDNV diamond (HDNV) at a magnetic flux density of about 10.55 mT. It is typically an intensity minimum and a delay maximum of the fluorescence radiation (FL) of the HD-NV diamond (HDNV);

E9.5.3b

third upper minor fluorescent feature of the 9.5 mT major fluorescent feature (E _9.5.0 ) of an exemplary HDNV diamond (HDNV) at a magnetic flux density of about 11.10 mT. It is typically an intensity maximum and a delay minimum of the fluorescence radiation (FL) of the HD-NV diamond (HDNV);

E9.5.4b

fourth upper minor fluorescent feature of the 9.5 mT major fluorescent feature (E _9.5.0 ) of an exemplary HDNV diamond (HDNV) at a magnetic flux density of about 11.60 mT. It is typically an intensity minimum and a delay maximum of the fluorescence radiation (FL) of the HD-NV diamond (HDNV);

E9.5.5b

fifth upper minor fluorescent feature of the 9.5 mT major fluorescent feature (E _9.5.0 ) of an exemplary HDNV diamond (HDNV) at a magnetic flux density of approximately 11.89 mT. It is typically an intensity maximum and a delay minimum of the fluorescence radiation (FL) of the HD-NV diamond (HDNV);

E9.5.6b

sixth upper minor fluorescent feature of the 9.5 mT major fluorescent feature (E _9.5.0 ) of an exemplary HDNV diamond (HDNV) at a magnetic flux density of approximately 12.12 mT. It is typically an intensity minimum and a delay maximum of the fluorescence radiation (FL) of the HD-NV diamond (HDNV);

E34.0.11a

eleventh lower minor fluorescent feature of the 34.0 mT major fluorescent feature (E _34.0.0 ) of an exemplary HDNV diamond (HDNV) at a magnetic flux density of ca. 31.22 mT. It is typically an intensity maximum and a delay minimum of the fluorescence radiation (FL) of the HD-NV diamond (HDNV);

E34.0,10a

tenth lower minor fluorescent feature of the 34.0 mT major fluorescent feature (E _34.0.0 ) of an exemplary HDNV diamond (HDNV) at a magnetic flux density of approximately 31.67 mT. It is typically an intensity minimum and a delay maximum of the fluorescence radiation (FL) of the HD-NV diamond (HDNV);

E34.0.9a

ninth lower minor fluorescent feature of the 34.0 mT major fluorescent feature (E _34.0.0 ) of an exemplary HDNV diamond (HDNV) at a magnetic flux density of ca. 31.78 mT. It is typically an intensity maximum and a delay minimum of the fluorescence radiation (FL) of the HD-NV diamond (HDNV);

E34.0.8a

eighth lower minor fluorescent feature of the 34.0 mT major fluorescent feature (E _34.0.0 ) of an exemplary HDNV diamond (HDNV) at a magnetic flux density of approximately 32.00 mT. It is typically an intensity minimum and a delay maximum of the fluorescence radiation (FL) of the HD-NV diamond (HDNV);

E34.0.7a

seventh lower minor fluorescent feature of the 34.0 mT major fluorescent feature (E _34.0.0 ) of an exemplary HDNV diamond (HDNV) at a magnetic flux density of approximately 32.25 mT. It is typically an intensity maximum and a delay minimum of the fluorescence radiation (FL) of the HD-NV diamond (HDNV);

E34.0.6a

sixth lower minor fluorescent feature of the 34.0 mT major fluorescent feature (E _34.0.0 ) of an exemplary HDNV diamond (HDNV) at a magnetic flux density of approximately 32.63 mT. It is typically an intensity minimum and a delay maximum of the fluorescence radiation (FL) of the HD-NV diamond (HDNV);

E34.0.5a

fifth lower minor fluorescent feature of the 34.0 mT major fluorescent feature (E _34.0.0 ) of an exemplary HDNV diamond (HDNV) at a magnetic flux density of approximately 32.72 mT. It is typically an intensity maximum and a delay minimum of the fluorescence radiation (FL) of the HD-NV diamond (HDNV);

E34.0.4a

fourth lower minor fluorescent feature of the 34.0 mT major fluorescent feature (E _34.0.0 ) of an exemplary HDNV diamond (HDNV) at a magnetic flux density of ca. 32.96 mT. It is typically an intensity minimum and a delay maximum of the fluorescence radiation (FL) of the HD-NV diamond (HDNV);

E34.0.3a

third lower minor fluorescent feature of the 34.0 mT major fluorescent feature (E _34.0.0 ) of an exemplary HDNV diamond (HDNV) at a magnetic flux density of ca. 33.24 mT. It is typically an intensity maximum and a delay minimum of the fluorescence radiation (FL) of the HD-NV diamond (HDNV);

E34.0.2a

second lower minor fluorescent feature of the 34.0 mT major fluorescent feature (E _34.0.0 ) of an exemplary HDNV diamond (HDNV) at a magnetic flux density of approximately 33.53 mT. It is typically an intensity minimum and a delay maximum of the fluorescence radiation (FL) of the HD-NV diamond (HDNV);

E34.0.1a

first lower minor fluorescent feature of the 34.0 mT major fluorescent feature (E _34.0.0 ) of an exemplary HDNV diamond (HDNV) at a magnetic flux density of approximately 33.65 mT. It is typically an intensity maximum and a delay minimum of the fluorescence radiation (FL) of the HD-NV diamond (HDNV);

E34.0,0

Main fluorescence feature of an exemplary HDNV diamond (HDNV) at a magnetic flux density of ca. 33.98 mT. It is typically an intensity minimum and a delay maximum of the fluorescence radiation (FL) of the HD-NV diamond (HDNV). The value of 33.98mT comes from the 7 ;

E34.0,1b

first upper minor fluorescent feature of the 34.0 mT major fluorescent feature (E _34.0.0 ) of an exemplary HDNV diamond (HDNV) at a magnetic flux density of approximately 34.28 mT. It is typically an intensity maximum and a delay minimum of the fluorescence radiation (FL) of the HD-NV diamond (HDNV);

E34.0.2b

second upper minor fluorescent feature of the 34.0 mT major fluorescent feature (E _34.0.0 ) of an exemplary HDNV diamond (HDNV) at a magnetic flux density of approximately 34.38 mT. It is typically an intensity minimum and a delay maximum of the fluorescence radiation (FL) of the HD-NV diamond (HDNV);

E34.0,3b

third upper minor fluorescent feature of the 34.0 mT major fluorescent feature (E _34.0.0 ) of an exemplary HDNV diamond (HDNV) at a magnetic flux density of approximately 34.72 mT. It is typically an intensity maximum and a delay minimum of the fluorescence radiation (FL) of the HD-NV diamond (HDNV);

E34.0.4b

fourth upper minor fluorescent feature of the 34.0 mT major fluorescent feature (E _34.0.0 ) of an exemplary HDNV diamond (HDNV) at a magnetic flux density of ca. 34.97 mT. It is typically an intensity minimum and a delay maximum of the fluorescence radiation (FL) of the HD-NV diamond (HDNV);

E34.0.5b

fifth upper minor fluorescent feature of the 34.0 mT major fluorescent feature (E _34.0.0 ) of an exemplary HDNV diamond (HDNV) at a magnetic flux density of approximately 35.24 mT. It is typically an intensity maximum and a delay minimum of the fluorescence radiation (FL) of the HD-NV diamond (HDNV);

E34.0.6b

sixth upper minor fluorescent feature of the 34.0 mT major fluorescent feature (E _34.0.0 ) of an exemplary HDNV diamond (HDNV) at a magnetic flux density of approximately 35.35 mT. It is typically an intensity minimum and a delay maximum of the fluorescence radiation (FL) of the HD-NV diamond (HDNV);

E34.0.7b

fifth upper minor fluorescent feature of the 34.0 mT major fluorescent feature (E _34.0.0 ) of an exemplary HDNV diamond (HDNV) at a magnetic flux density of approximately 35.74 mT. It is typically an intensity maximum and a delay minimum of the fluorescence radiation (FL) of the HD-NV diamond (HDNV);

E34.0.8b

eighth upper minor fluorescent feature of the 34.0 mT major fluorescent feature (E _34.0.0 ) of an exemplary HDNV diamond (HDNV) at a magnetic flux density of approximately 36.03 mT. It is typically an intensity minimum and a delay maximum of the fluorescence radiation (FL) of the HD-NV diamond (HDNV);

E34.0.9b

ninth upper minor fluorescent feature of the 34.0 mT major fluorescent feature (E _34.0.0 ) of an exemplary HDNV diamond (HDNV) at a magnetic flux density of approximately 36.30 mT. It is typically an intensity maximum and a delay minimum of the fluorescence radiation (FL) of the HD-NV diamond (HDNV);

E34.0,10b

tenth upper minor fluorescent feature of the 34.0 mT major fluorescent feature (E _34.0.0 ) of an exemplary HDNV diamond (HDNV) at a magnetic flux density of approximately 36.44 mT. It is typically an intensity minimum and a delay maximum of the fluorescence radiation (FL) of the HD-NV diamond (HDNV);

E34.0,11b

eleventh upper minor fluorescent feature of the 34.0 mT major fluorescent feature (E _34.0.0 ) of an exemplary HDNV diamond (HDNV) at a magnetic flux density of approximately 36.67 mT. It is typically an intensity maximum and a delay minimum of the fluorescence radiation (FL) of the HD-NV diamond (HDNV);

E34.0,12b

twelfth upper minor fluorescent feature of the 34.0 mT major fluorescent feature (E _34.0.0 ) of an exemplary HDNV diamond (HDNV) at a magnetic flux density of approximately 36.80 mT. It is typically an intensity minimum and a delay maximum of the fluorescence radiation (FL) of the HD-NV diamond (HDNV);

E34.0,13b

thirteenth upper minor fluorescent feature of the 34.0 mT major fluorescent feature (E _34.0.0 ) of an exemplary HDNV diamond (HDNV) at a magnetic flux density of ca. 36.97 mT. It is typically an intensity maximum and a delay minimum of the fluorescence radiation (FL) of the HD-NV diamond (HDNV);

E51.0,0

Main fluorescence feature of an exemplary HDNV diamond (HDNV) at a magnetic flux density of approximately 51.00 mT. It is typically an intensity minimum and a delay maximum of the fluorescence radiation (FL) of the HD-NV diamond (HDNV). The value of approx. 51.00mT comes from the 3 . the 3 would also justify a value of 50mT. A final measurement is required here;

E59.5.0

Main fluorescence feature of an exemplary HDNV diamond (HDNV) at a magnetic flux density of ca. 59.50 mT. It is typically an intensity minimum and a delay maximum of the fluorescence radiation (FL) of the HD-NV diamond (HDNV). The value of approx. 59.50mT comes from the 3 . A final measurement is required here;

E102.4.9a

ninth lower minor fluorescent feature of the 102.4 mT major fluorescent feature (E _102.4.0 ) of an exemplary HDNV diamond (HDNV) at a magnetic flux density of ca. 97.10 mT. It is typically an intensity maximum and a delay minimum of the fluorescence radiation (FL) of the HD-NV diamond (HDNV);

E102.4.8.

eighth lower minor fluorescent feature of the 102.4 mT major fluorescent feature (E _102.4.0 ) of an exemplary HDNV diamond (HDNV) at a magnetic flux density of ca. 97.60 mT. It is typically an intensity minimum and a delay maximum of the fluorescence radiation (FL) of the HD-NV diamond (HDNV);

E102.4.7a

seventh lower minor fluorescent feature of the 102.4 mT major fluorescent feature (E _102.4.0 ) of an exemplary HDNV diamond (HDNV) at a magnetic flux density of approximately 98.00 mT. It is typically an intensity maximum and a delay minimum of the fluorescence radiation (FL) of the HD-NV diamond (HDNV);

E102.4.6a

sixth lower minor fluorescent feature of the 102.4 mT major fluorescent feature (E _102.4.0 ) of an exemplary HDNV diamond (HDNV) at a magnetic flux density of ca. 98.40 mT. It is typically an intensity minimum and a delay maximum of the fluorescence radiation (FL) of the HD-NV diamond (HDNV);

E102.4.5a

fifth lower minor fluorescent feature of the 102.4 mT major fluorescent feature (E _102.4.0 ) of an exemplary HDNV diamond (HDNV) at a magnetic flux density of ca. 98.90 mT. It is typically an intensity maximum and a delay minimum of the fluorescence radiation (FL) of the HD-NV diamond (HDNV);

E102.4.4a

fourth lower minor fluorescent feature of the 102.4 mT major fluorescent feature (E _102.4.0 ) of an exemplary HDNV diamond (HDNV) at a magnetic flux density of ca. 99.50 mT. It is typically an intensity minimum and a delay maximum of the fluorescence radiation (FL) of the HD-NV diamond (HDNV);

E102.4.3a

third lower minor fluorescent feature of the 102.4 mT major fluorescent feature (E _102.4.0 ) of an exemplary HDNV diamond (HDNV) at a magnetic flux density of approximately 100.10 mT. It is typically an intensity maximum and a delay minimum of the fluorescence radiation (FL) of the HD-NV diamond (HDNV);

E102.4.2a

second lower minor fluorescent feature of the 102.4 mT major fluorescent feature (E _102.4.0 ) of an exemplary HDNV diamond (HDNV) at a magnetic flux density of approximately 101.10 mT. It is typically an intensity minimum and a delay maximum of the fluorescence radiation (FL) of the HD-NV diamond (HDNV);

E102.4.1a

first lower minor fluorescent feature of the 102.4 mT major fluorescent feature (E _102.4.0 ) of an exemplary HDNV diamond (HDNV) at a magnetic flux density of approximately 101.80 mT. It is typically an intensity maximum and a delay minimum of the fluorescence radiation (FL) of the HD-NV diamond (HDNV);

E102.4.0

Main fluorescence feature of an exemplary HDNV diamond (HDNV) at a magnetic flux density of ca. 102.4 mT. It is typically an intensity minimum and a delay maximum of the fluorescence radiation (FL) of the HD-NV diamond (HDNV).;

E102.4.1b

first upper minor fluorescent feature of the 102.4 mT major fluorescent feature (E _102.4.0 ) of an exemplary HDNV diamond (HDNV) at a magnetic flux density of approximately 103.10 mT. It is typically an intensity maximum and a delay minimum of the fluorescence radiation (FL) of the HD-NV diamond (HDNV);

E102.4.2b

second upper minor fluorescent feature of the 102.4 mT major fluorescent feature (E _102.4.0 ) of an exemplary HDNV diamond (HDNV) at a magnetic flux density of approximately 103.80 mT. It is typically an intensity minimum and a delay maximum of the fluorescence radiation (FL) of the HD-NV diamond (HDNV);

E102.4.3b

third upper minor fluorescent feature of the 102.4 mT major fluorescent feature (E _102.4.0 ) of an exemplary HDNV diamond (HDNV) at a magnetic flux density of approximately 104.80 mT. It is typically an intensity maximum and a delay minimum of the fluorescence radiation (FL) of the HD-NV diamond (HDNV);

E102.4.4b

fourth upper minor fluorescent feature of the 102.4 mT major fluorescent feature (E _102.4.0 ) of an exemplary HDNV diamond (HDNV) at a magnetic flux density of approximately 105.50 mT. It is typically an intensity minimum and a delay maximum of the fluorescence radiation (FL) of the HD-NV diamond (HDNV);

E102.4.5b

fifth upper minor fluorescent feature of the 102.4 mT major fluorescent feature (E _102.4.0 ) of an exemplary HDNV diamond (HDNV) at a magnetic flux density of approximately 106.10 mT. It is typically an intensity maximum and a delay minimum of the fluorescence radiation (FL) of the HD-NV diamond (HDNV);

E102.4.6b

sixth upper minor fluorescent feature of the 102.4 mT major fluorescent feature (E _102.4.0 ) of an exemplary HDNV diamond (HDNV) at a magnetic flux density of approximately 106.60 mT. It is typically an intensity minimum and a delay maximum of the fluorescence radiation (FL) of the HD-NV diamond (HDNV);

E102.4.7b

seventh upper minor fluorescent feature of the 102.4 mT major fluorescent feature (E _102.4.0 ) of an exemplary HDNV diamond (HDNV) at a magnetic flux density of approximately 107.00 mT. It is typically an intensity maximum and a delay minimum of the fluorescence radiation (FL) of the HD-NV diamond (HDNV);

E102.4.8b

eighth upper minor fluorescent feature of the 102.4 mT major fluorescent feature (E _102.4.0 ) of an exemplary HDNV diamond (HDNV) at a magnetic flux density of ca. 107.30 mT. It is typically an intensity minimum and a delay maximum of the fluorescence radiation (FL) of the HD-NV diamond (HDNV);

E102.4.9b

ninth upper minor fluorescent feature of the 102.4 mT major fluorescent feature (E _102.4.0 ) of an exemplary HDNV diamond (HDNV) at a magnetic flux density of ca. 107.70 mT. It is typically an intensity maximum and a delay minimum of the fluorescence radiation (FL) of the HD-NV diamond (HDNV);

eh

Etch holes (EH). The etching holes (EH) serve to ensure that the undercutting of the second insulating layer (OX2) is sufficient to separate the second rotating body (Ry) and the first rotating body (Rx);

ELa1x

left stator electrode of the first X-axis comb drive (CBDRV1x);

ELa1y

upper stator electrode of the first Y-axis comb drive (CBDRV1y);

ELa2x

right stator electrode of the first X-axis comb drive (CBDRV1x);

ELa2y

lower stator electrode of the first Y-axis comb drive (CBDRV1y);

ELa3x

left stator electrode of the second X-axis comb drive (CBDRV2x);

ELa3y

upper stator electrode of the second Y-axis comb drive (CBDRV2y);

ELa4x

right stator electrode of the second X-axis comb drive (CBDRV2x);

ELa4y

lower stator electrode of the second Y-axis comb drive (CBDRV2y);

ELb1x

left rotor electrode of the first X-axis comb drive (CBDRV1x);

ELb1y

upper rotor electrode of the first Y-axis comb drive (CBDRV1y);

ELb2x

right rotor electrode of the first X-axis comb drive (CBDRV1x);

ELb2y

lower rotor electrode of the first Y-axis comb drive (CBDRV1y);

ELb3x

left rotor electrode of the second X-axis comb drive (CBDRV2x);

ELb3y

upper rotor electrode of the second Y-axis comb drive (CBDRV2y);

ELb4x

right rotor electrode of the second X-axis comb drive (CBDRV2x);

ELb4y

lower rotor electrode of the second Y-axis comb drive (CBDRV2y);

EXTDB

external data bus;

F1

Filter;

FL

fluorescence radiation with fluorescence radiation wavelength (λ _fl );

FNAN

Solder on mounting surface, which is formed by the lower the connection surfaces (AF) of the terminals (AN) of the housing (GH);

FNDI

Solder to the mounting surface (VF) of the die island (DI) in the housing (GH);

FS

frequency signal;

GDx

X-axis motor control for the paramagnetic-centered diamond (HDNV) or HD-NV diamond alignment fixture for the paramagnetic-centered crystal;

GDy

Y motor control for the Y-axis of the paramagnetic-centered diamond (HDNV) or HD-NV-diamond alignment device the crystal with the paramagnetic centers;

gdz

Z-motor control for the Z-axis of the paramagnetic-centered diamond (HDNV) alignment device or the HD-NV diamonds the crystal with the paramagnetic centers;

GL

glue or solder;

GR1x

first bearing or first spring (GR1x) of the first X-axis (AXx);

GR2x

second bearing or first spring (GR1x) of the first X-axis (AXx);

GRly

first bearing or spring (GR1x) of the second Y-axis (AXy);

GR2x

second bearing or first spring (GR1x) of the second Y-axis (AXy);

GND

reference potential line;

HAL

hall plate. The Hall plate (HAL) is preferably a low-doped, as thin as possible semiconducting layer of a first conductivity type in a semiconducting substrate (sub) of another conductivity type;

LDS

Holder. In this document, the term holder (HLT) is synonymous with the term frame (RM);

INTDB

internal data bus of the control device (STV);

λfl

fluorescence radiation wavelength;

λpmp

pump radiation wavelength;

LB

pump radiation with pump radiation wavelength (λ _pmp );

LD

laser or pump radiation source;

LDDRV

driver circuit for the pump radiation source (LD);

LDV

loading device. The charging device is used to supply the quantum technological device with electricity in second time periods. In these second periods of time, the quantum technological device preferably does not carry out any quantum technological methods. The charging device preferably charges an energy reserve (BENG) in these second time periods. In the first time periods, the separating device (TS) preferably separates the charging device from the energy reserve (BENG) and the energy reserve (BENG) then supplies the sensitive device parts with low-interference electrical energy of better quality in the first time periods;

LIA

lock-in amplifier;

fiber optic

Optical fiber;

FO1

first optical fiber;

FO2

second optical fiber;

MDS

device internal data bus;

MDBIF

engine data bus interface;

memes

Storage;

MFSx

X magnetic field control of the magnetic flux density B in the X direction for the X magnetic field generator coil (MGx) for the generation of a magnetic flux density B in the X direction. The X-magnetic field controller for the X-axis magnetic field controls the electric current through the X-magnetic field generator coil (MGx) to generate the magnetic field with a magnetic flux density B in the X-direction. Typically, the computer core (CPU) of the control device (STV) controls the magnetic field control of the magnetic flux density B in the X direction in such a way that it uses the X magnetic field generator coil (MGx) to generate a magnetic flux density B in the X direction with a corresponding electric current energized. With the help of an exemplary X sensor element (MSx) for measuring the magnetic flux density B in the X direction, the computer core (CPU) of the control device (STV) can detect the strength of the real magnetic flux density B in the X direction. In general, the accuracy of the exemplary X-sensor element (MSx) for measuring the magnetic flux density B in the X-direction may not be as precise as the sensitivity of the fluorescence features to misalignments of the magnetic field with respect to the crystal (HDNV). Therefore, the computer core (CPU) will ultimately only use this control loop (MFSx, MGx, MSX) to roughly adjust the magnetic flux density B in the X-direction and then use an iterative and scan-based search method to search for the extremum of the targeted fluorescence feature;

MFSy

Y magnetic field control of the magnetic flux density B in the Y direction for the Y magnetic field generator coil (MGy) for the generation of a magnetic flux density B in the Y direction. The Y magnetic field controller for the Y-axis magnetic field controls the electric current through the Y magnetic field generator coil (MGy) to generate the magnetic field with a magnetic flux density B in the Y direction. Typically, the computer core (CPU) of the control device (STV) controls the Y magnetic field control of the magnetic flux density B in the Y direction in such a way that it uses the Y magnetic field generator coil (MGy) to generate a magnetic flux density B in the Y direction with a corresponding electric current energized. With the help of an exemplary Y sensor element (MSy) for measuring the magnetic flux density B in the Y direction, the computer core (CPU) of the control device (STV) can detect the strength of the real magnetic flux density B in the Y direction. In general, the accuracy of the exemplary Y-sensor element (MSy) for measuring the magnetic flux density B in the Y-direction may not be as precise as the sensitivity of the fluorescence features to misalignments of the magnetic field with respect to the crystal (HDNV). Therefore, the computer core (CPU) will ultimately only use this control loop (MFSy, MGy, MSY) to make a rough adjustment of the magnetic flux density B in the Y direction and then use an iterative and scan-based search method to search for the extremum of the targeted fluorescence feature;

MFSz

Z magnetic field control of the magnetic flux density B in the Z direction for the Z magnetic field generator coil (MGz) for the generation of a magnetic flux density B in the Z direction. The Z magnetic field controller for the Z-axis magnetic field controls the electric current through the Z magnetic field generator coil (MGz) to generate the magnetic field with a magnetic flux density B in the Z direction. Typically, the computer core (CPU) of the control device (STV) controls the Z magnetic field control of the magnetic flux density B in the Z direction in such a way that it uses the Z magnetic field generator coil (MGz) for generating a magnetic flux density B in the Z direction with a corresponding electric current energized. With the help of an exemplary Z sensor element (MSz) for measuring the magnetic flux density B in the Z direction, the computer core (CPU) of the control device (STV) can detect the strength of the real magnetic flux density B in the Z direction. In general, the accuracy of the exemplary Z-sensor element (MSz) for measuring the magnetic flux density B in the Z-direction may not be as precise as the sensitivity of the fluorescence features to misalignments of the magnetic field with respect to the crystal. Therefore, the computer core (CPU) will ultimately only use this control loop (MFSz, MGz, MSZ) to make a rough adjustment of the magnetic flux density B in the Z direction and then use an iterative and scan-based search method to search for the extremum of the targeted fluorescence feature;

MG

magnetic field generating structures. It is preferably a pre-magnetized ferromagnetic material;

MGx

X magnetic field generator coil for generating a magnetic flux density B in the X direction;

MGy

Y magnetic field generator coil for generating a magnetic flux density B in the Y direction. The Y magnetic field generator coil for generating the magnetic flux density B in the Y direction is indicated in FIG. 2 only as a simple circle. This is for better clarity. In FIG. 2, the axis of the Y magnetic field generator coil for generating the magnetic flux density B in the Y direction is to be considered perpendicular to the surface of the figure;

MGz

Z magnetic field generator coil for generating a magnetic flux density B in the Z direction;

MSAx

X drive X motor control;

MSAy

Y motor control of the Y drive;

MSAz

Sterndrive Z Motor Control;

MSx

exemplary X-sensor element for measuring the magnetic flux density B in the X-direction;

MSy

exemplary Y sensor element for the redistribution of the magnetic flux density B in the Y direction;

MSz

exemplary Z sensor element for measuring the magnetic flux density B in the Z direction;

NV1

first paramagnetic center, e.g. first NV center;

NV2

second paramagnetic center, e.g. second NV center;

NVM

non-volatile memory;

OSYS

optical system;

OSZ

waveform generator (WFG) time base (TB) oscillator;

OX1

first insulating layer. The first insulating layer mechanically connects the handle wafer (Si0) to the intermediate wafer (Si1) of the exemplary embodiment of the MEMS goniometer (MEMSG) in the figures and electrically insulates them from one another;

OX2

second insulating layer. The second insulating layer mechanically connects the intermediate wafer (Si1) to the device wafer (Si0) of the exemplary embodiment of the MEMS goniometer (MEMSG) in the figures and electrically insulates them from one another;

PD

photodetector;

PhD

waveform generator (WFG) time base (TB) phase detector;

PHDS

phase difference signal of the phase detector (PHD) of the time base (TB) of the waveform generator (WFG);

R.A.M.

read/write memory;

RefSig

Atomic clock (ATC) reference frequency signal;

RES

reset circuit;

RG

controller. Preferably, the controller includes a PI or PID controller or the like. The controller preferably evaluates the output signal of the evaluation device (AMP. LIA) and controls the alignment device (RM, Rx, Ry, Rz or DMT, RT, HLT) and/or the device parts (MG, MGx, MGy, MGz, MFSy, MFSy, MFSz) so that, for example, the intensity of the expression of a fluorescence feature in the fluorescence intensity curve and/or in the fluorescence delay curve is extremal. A computer core (CPU) and/or the control device (STV) can include the controller or its function;

rm

frame, in particular of the MEMS goniometer (MEMSG);

rt

rotation device. In this document, the rotating device is synonymous with the term first rotating body (Ry);

RX

first rotating body;

RY

second rotating body;

S0

received signal;

S1

amplified received signal;

S5

modulation signal or transmission signal. The modulation signal is preferably a pulse-modulated signal. It is very particularly preferably a PFM-modulated signal and/or a PWM-modulated signal. Other forms of modulation can be, for example, but not only PCM modulation, PFM modulation, PDM modulation. The modulation with a spreading code is particularly preferred. Modulation with a spread code based on the output signal of a so-called true random noise generator (TRNG), which generates a real random number, is particularly preferred.

Si0

handle wafer;

Si1

intermediate wafer;

Si2

device wafer;

SPRG

voltage regulator. In the first periods in which the charging device (LDV) does not supply the quantum technological device with electrical energy, the voltage regulator draws low-interference electrical energy from the energy reserve (BENG) and adjusts the drawn voltage or voltages and the supply voltages required by the quantum technological device on. The voltage regulator can include multiple voltage regulators. Possibly and less preferably, the voltage regulator also temporarily supplies one or more parts of the quantum technological device with electrical energy in first time periods when the quantum technological device is executing a quantum technological method;

SR1

first voltage regulator;

SR2

second voltage regulator;

SR3

third voltage regulator;

SR4

fourth voltage regulator;

STS

Control signal of the controller (CTR) of the time base (TB) of the waveform generator (WFG);

STV

control device;

TB

time base;

TREN

electrical trench isolation of the respective stator electrode (Elalx, Ela2x, Ela3x, Ela4x, Elaly, Ela2y, Ela3y, Ela4y) from the rest of the device wafer material. It is preferably a trench that preferably passes completely through the device wafer (Si2) from the surface of the device wafer to the second insulation layer (OX2) and is preferably filled with an electrically insulating material, for example SiO2;

TS

separator. The disconnect device disconnects the load device (LDV) from the power reserve in first periods. Typically, these first time periods are such time periods in which the quantum technological device carries out a quantum technological method;

TXL

undefined transmission channel. The transmission channel may include wired and wireless legs;

Val

storage value of the storage cell of the memory (MEM) at the storage location of the storage address (ADR);

Vbat

supply voltage;

Vbat1

first internal supply voltage of the MEMS goniometer (MEMSG);

vf

connection surface (VF) between the crystal (substrate) of the respective quantum technological device and the respective housing (GH) of the respective quantum technological device;

VT

indentation to accommodate the HDNV diamond;

WFG

waveform generator with freely programmable waveform;

glossary

fluorescence intensity value

The fluorescence intensity value reflects the intensity of the fluorescence radiation (FL) of the crystal when irradiated with pump radiation (PL). The fluorescence radiation (FL) typically has a fluorescence radiation wavelength (λ _fl ) that is typically longer-wavelength than the pump radiation wavelength (λ _pmp ) of the pump radiation (LB). Typically, one or more paramagnetic centers and/or one or more pairs of coupled paramagnetic centers and/or one or more groups of paramagnetic centers and/or one or more pairs of coupled paramagnetic centers radiate one or more clusters of paramagnetic centers and/or one or more clusters of Paramagnetic centers pair off fluorescence radiation (FL) with a fluorescence wavelength (λ _pmp ) when an exemplary pump radiation source (LD) irradiates them with pump radiation (LB) with a pump radiation wavelength (λ _pmp ). The crystal preferably comprises diamond as the crystal material. Preferably, the set of paramagnetic centers of the crystal comprises NV centers and/or SiV centers and/or ST1 centers and/or GR1 centers and/or TR12 centers. Most preferably, the set of paramagnetic centers of the crystal comprises NV centers. For example, in the most preferred use of NV centers as paramagnetic centers, one or more NV centers and/or one or more pairs of coupled NV centers and/or one or more groups of NV centers and/or one or more pairs radiate coupled NV centers one or more clusters of NV centers and/or one or more clusters of pairs of NV centers emit fluorescence radiation (FL) with a fluorescence wavelength (λ _pmp ) when an exemplary pump radiation source (LD) the NV centers irradiated with pump radiation (LB) with the pump radiation wavelength (λ _pmp ). What is written here applies to the entire text presented here.

Diamond (HDNV)

1. i. Andere zum ankoppelnden paramagnetischen Zentrum gleich ausgerichtete paramagnetische Zentren gleicher Art, also beispielsweise die Kopplung eines NV-Zentrums an ein gleichausgerichtetes NV-Zentrum in Diamant;
2. ii. Andere zum ankoppelnden paramagnetischen Zentrum nicht gleich ausgerichtete paramagnetische Zentren gleicher Art, also beispielsweise die Kopplung eines NV-Zentrums an ein nicht gleichausgerichtetes NV-Zentrum in Diamant;
3. iii. Andere zum ankoppelnden paramagnetischen Zentrum gleich ausgerichtete paramagnetische Zentren anderer Art, also beispielsweise die Kopplung eines SiV-Zentrums oder St1-Zentrums oder GeV-Zentrums oder TR12-Zentrums an ein gleichausgerichtetes NV-Zentrum in Diamant;
4. iv. Andere zum ankoppelnden paramagnetischen Zentrum nicht gleich ausgerichtete paramagnetische Zentren anderer Art, also beispielsweise die Kopplung eines SiV-Zentrums oder St1-Zentrums oder GeV-Zentrums oder TR12-Zentrums an ein nicht gleichausgerichtetes NV-Zentrum in Diamant;
5. v. Nukleare Spins mit magnetischem Moment von Isotopen mit einem solchen Spin, die an das ankoppelnde paramagnetischen Zentrum koppeln und die Teil des paramagnetischen Zentrums sind, also beispielsweise die Kopplung eines NV-Zentrums an ein den Kern des Stickstoffs im NV-Zentrum;
6. vi. Nukleare Spins mit magnetischem Moment von Isotopen mit einem solchen Spin, die an das ankoppelnde paramagnetischen Zentrum koppeln und die nicht Teil des paramagnetischen Zentrums sind, also beispielsweise die Kopplung eines NV-Zentrums an ein den Kern eines ¹³C-Isotops im Umfeld eines NV-Zentrums.

In the sense of the document presented here, an HD-NV diamond is a crystal with a particularly high density of paramagnetic centers. Due to this high density of paramagnetic centers, the fluorescence intensity curve and/or the fluorescence delay curve show fluorescence features that cause couplings of these paramagnetic centers with other crystal structure elements. Such other crystal structure elements can be, for example:

1. i. Other paramagnetic centers of the same type aligned in the same way as the coupling paramagnetic center, e.g. the coupling of an NV center to a similarly aligned NV center in diamond;
2. ii. Other paramagnetic centers of the same type that are not aligned in the same way as the coupling paramagnetic center, e.g. the coupling of an NV center to a non-aligned NV center in diamond;
3. iii. Other types of paramagnetic centers aligned in the same way as the coupling paramagnetic center, for example the coupling of a SiV center or St1 center or GeV center or TR12 center to an NV center in diamond that is aligned in the same way;
4. IV. Other types of paramagnetic centers that are not aligned in the same way as the coupling paramagnetic center, e.g. the coupling of a SiV center or St1 center or GeV center or TR12 center to a non-aligned NV center in diamond;
5. v. Nuclear spins with magnetic moment of isotopes with such a spin, which couple to the coupling paramagnetic center and which are part of the paramagnetic center, e.g. the coupling of an NV center to a nucleus of the nitrogen in the NV center;
6. vi. Nuclear spins with magnetic moment of isotopes with such a spin, which couple to the coupling paramagnetic center and which are not part of the paramagnetic center, e.g. the coupling of an NV center to a nucleus of a ¹³ C isotope in the vicinity of an NV center.

The high density of paramagnetic centers of one type, for example NV centers in diamond as a crystal, increases the probability that the distance of a paramagnetic center to such another crystal structure element will be so small that one of the couplings indicated above becomes possible. As a result, the fluorescence features indicative of such coupling between a paramagnetic center and another crystal structural element are more pronounced in the fluorescence intensity curve and the fluorescence retardation curve of the crystal, respectively. On a diamond with a high density of NV centers, this means that the fluorescence features indicative of such coupling between an NV center and another crystal structure element will be more pronounced in the diamond's fluorescence intensity curve and fluorescence retardation curve, respectively.

For example, a feature characteristic of an HD NV diamond is the coupling of one NV center to another NV center. Such a diamond thus comprises a pair of NV centers of two coupled and equivalent NV centers. According to the content of the document presented here, this diamond (HDNV) is then preferably intended for use in a quantum technological device and/or in a quantum technological method. The HD-NV diamond can then be characterized, for example, by the fact that the intensity value curve of the intensity of the fluorescence radiation (FL) of the pair of NV centers when irradiated with a pump radiation (LB) with a pump radiation wavelength (λ _pmp ) as a function of the value of the magnetic Flux density (B) of a magnetic field external to the diamond (HDNV) a typical intensity drop (English: Dip) of the fluorescence intensity value of the intensity of the fluorescence radiation (FL) and/or a typical delay increase of the fluorescence delay value of more than 0.01% and/or of more than 0.02% and/or more than 0.05% and/or more than 0.1% and/or more than 0.2% and/or more than 0.5% and/or 1% and/or greater than 2% and/or greater than 5% at an external magnetic flux density (B) acting on the diamond of about 34.0mT (E _34.0.0 ), which is more equivalent to an NV-NV interaction Pare of NV centers and hence a low m mean distance between the equivalent NV centers.

At this point, the document presented here indicates that diamonds usually have an extremely high density of P1 centers. Therefore, increasing the NV center density does not usually result in a change in the fluorescent feature indicative of NV/P1 coupling.

fluorescent features

Fluorescence features within the meaning of the document presented here are characteristic points in the fluorescence intensity curve or the fluorescence delay curve. The fluorescence intensity curve is the graph of the fluorescence intensity values of the fluorescence radiation of the crystal (HDNV) shown against the amount of the magnetic flux density B. The fluorescence delay curve is the graph of the time delay values of the time delay of the modulation of the intensity of the fluorescence radiation (FL) compared to the modulation of the intensity the pump radiation or compared to the modulation signal (S5) or a signal derived therefrom versus the magnitude of the magnetic flux density B. Fluorescence features in the fluorescence intensity curve are local minima and maxima in the course of the curve. Fluorescence features in the fluorescence delay curve are local maxima and minima in the curve. The following list enumerates the fluorescence characteristics of a HD-NV diamond (HDNV) with a high density of NV centers determined in the preparatory work for this document. These come into consideration as fluorescence features within the meaning of this document when using a diamond as a crystal of a proposed device or a proposed method. When fluorescence features are mentioned in this document, at least the following fluorescence features are meant when using a diamond as a crystal of a proposed device or a proposed method. If other materials are used (see also the content of the ZPL table), other fluorescence characteristics result, but these are usually due to analogous mechanisms. The use of these other materials and the corresponding paramagnetic centers and their fluorescence characteristics is encompassed within the disclosure of the document presented here. In particular, the use of crystals from elements of the II. Main group and the VI. Main group and IV. Main group of the disclosure presented here. Isotopes of the IV main group of the periodic table of the elements and from mixed crystals The fluorescence characteristics are not limited to this. If necessary, fewer and more fluorescent features can be used: fluorescence feature group no . Fluorescent feature pair number approx. position in mT (approx. specification) *) Type of intensity extremum min=minimum max=maximum Deceleration extremum type min=minimum max=maximum Fluorescence feature category 0mT E _0.0,0 0 0.00 mT at least Max main fluorescent feature E _0.0.1b 1 2.10 mT Max at least minor fluorescent feature E _0.0.2b 2 3.80 mT Max at least minor fluorescent feature E _0.0.3b 3 5.30 mT Max at least minor fluorescent feature 9.5mT E _9.5.8a 8th 5.91 mT Max at least minor fluorescent feature E _9.5.7a 7 6.70 mT Max at least minor fluorescent feature E _9.5.6a 6 6.95 mT at least Max minor fluorescent feature E _9.5.5a 5 7.21 mT Max at least minor fluorescent feature E _9.5.4a 4 7.85 mT at least Max minor fluorescent feature E _9.5.3a 3 8.12 mT Max at least minor fluorescent feature E _9.5.2a 2 8.43 mT at least Max minor fluorescent feature E _9.5.1a 1 8.82 mT Max at least minor fluorescent feature _E9.5.0 0 9.38 mT at least Max main fluorescent feature R _9.5.1b 1 10.05 mT Max at least minor fluorescent feature R _9.5.2b 2 10.55 mT at least Max minor fluorescent feature R _9.5.3b 3 11.10 mT Max at least minor fluorescent feature R _9.5.4b 4 11.60 mT at least Max minor fluorescent feature R _9.5.5b 5 11.89 mT Max at least minor fluorescent feature R _9.5.6b 6 12.12 mT at least Max minor fluorescent feature 34mT E _34.11a 11 31.22 mT Max at least minor fluorescent feature E _34.10a 10 31.67 mT at least Max minor fluorescent feature E _34.9a 9 31.78 mT Max at least minor fluorescent feature E _34.8a 8th 32.00 mT at least Max minor fluorescent feature E _34.7a 7 32.25 mT Max at least minor fluorescent feature E _34.6a 6 32.63 mT at least Max minor fluorescent feature E _34.5a 5 32.72 mT Max at least minor fluorescent feature E _34.4a 4 32.96 mT at least Max minor fluorescent feature E _34.3a 3 33.24 mT Max at least minor fluorescent feature E _34.2a 2 33.53 mT at least Max minor fluorescent feature E _34.1a 1 33.65 mT Max at least minor fluorescent feature _E34.0 0 33.98 mT at least Max main fluorescent feature E _34.1b 1 34.28 mT Max at least minor fluorescent feature E _34.2b 2 34.38 mT at least Max minor fluorescent feature E _34.3b 3 34.72 mT Max at least minor fluorescent feature E _34.4b 4 34.97 mT at least Max minor fluorescent feature E _34.5b 5 35.24 mT Max at least minor fluorescent feature E _34.6b 6 35.35 mT at least Max minor fluorescent feature E _34.7b 7 35.74 mT Max at least minor fluorescent feature E _34.8b 8th 36.03 mT at least Max minor fluorescent feature E _34.9b 9 36.30 mT Max at least minor fluorescent feature E _34.10a 10 36.44 mT at least Max minor fluorescent feature E _34.11b 11 36.67 mT Max at least minor fluorescent feature E _34.12b 12 36.80 mT at least Max minor fluorescent feature E _34.13b 13 36.97 mT at least at least minor fluorescent feature 51.0mT _E51.0.0 0 51.00 mT at least Max main fluorescent feature 59.5mT _E59.5.0 0 59.50 mT at least Max main fluorescent feature 102.4mT E _102.4.9a 9 97.10 mT Max at least minor fluorescent feature E _102.4.8a 8th 97.60 mT at least Max minor fluorescent feature E _102.4.7a 7 98.00 mT Max at least minor fluorescent feature E _102.4.6a 6 98.40 mT at least Max minor fluorescent feature E _102.4.5a 5 98.90 mT Max at least minor fluorescent feature E _102.4.4a 4 99.50 mT at least Max minor fluorescent feature E _102.4.3a 3 100.10 mT Max at least minor fluorescent feature E _102.4.2a 2 101.10 mT at least Max minor fluorescent feature E _102.4.1a 1 101.80 mT Max at least minor fluorescent feature _E102.4.0 0 102.40 mT at least Max main fluorescent feature E _102.4.1b 1 103.10 mT Max at least minor fluorescent feature E _102.4.2b 2 103.80 mT at least Max minor fluorescent feature E _102.4.3b 3 104.80 mT Max at least minor fluorescent feature E _102.4.4b 4 105.50 mT at least Max minor fluorescent feature E _102.4.5b 5 106.10 mT Max at least minor fluorescent feature E _102.4.6b 6 106.60 mT at least Max minor fluorescent feature E _102.4.7b 7 107.00 mT Max at least minor fluorescent feature E _102.4.8b 8th 107.30 mT at least Max minor fluorescent feature E _102.4.9b 9 107.70 mT Max at least minor fluorescent feature *) Also referred to in this document as the characteristic magnetic flux density B of the fluorescence feature. The respective characteristic magnetic flux density B of the respective fluorescence feature is taken from the drawings. The document presented here therefore explicitly recommends a prior re-measurement of the precise values of the characteristic magnetic flux densities B when reworking the technical teaching disclosed here. The values could possibly be provided with an offset of max. +/-1mT and a proportional error of 1% be.

Essentially

The term "essentially" in the sense of the document presented here means that deviations from an ideal value are permitted, but the resulting technical effects impair the intended purpose of the method or the device only so little that the usability of the technical device or the technical process is not impaired for a user or only so little that the user assesses the real technical effect as sufficient compared to the ideal technical effect.

Conventional magnetic field sensors

For the purposes of this document, a conventional magnetic field sensor can be a Hall sensor or a GMR sensor or an AMR sensor or a CMR sensor or another XMR sensor, for example. In principle, sensors that are based on other magnetometer principles are also conventional magnetic field sensors in the sense of the document presented here. In addition to the already mentioned Hall, GMR, AMR and XMR sensors, such conventional magnetic field sensors are, for example, Förster probes or saturation core magnetometers (Fluxgate or second-harmonic detector), fixed and rotating or otherwise moving coils and conductor pieces (induction), e.g. B. Vibrating sample magnetometers, optically pumped magnetometers, such as alkali vapor magnetometers (e.g. with atomic rubidium or cesium vapour), SQUIDs, which use a superconducting ring (Josephson effect) to record the magnetic flux density B with high sensitivity, proton magnetometers such as e.g. B. Overhauser magnetometer, magnetometer based on Bose-Einstein condensates (BEC magnetometer), Kerr magnetometer, Faraday magnetometer (use of the Faraday effect). Furthermore, in the sense of the document presented here, thin-film sensors that change their resistance directly under the influence of the magnetic flux and are therefore called "X-MagnetoResistive", such as GMR sensors (giant, dt. "huge, huge", GMR Effect), AMR sensors (anisotropic, dt. "anisotropic" AMR effect) or CMR sensors (colossal, dt. "oversized") conventional magnetic field sensors within the meaning of the document presented here. A conventional magnetic field sensor can be a field plate.

Crystal (HDNV)

Preferably, the object referred to in the text herein as a crystal (HDNV) comprises a single-crystal material. If the material is not monocrystalline, the partial crystals should preferably be monocrystalline and preferably aligned to the extent that the fluorescence characteristics are essentially expressed in the same way. The material of the crystal (HDNV) is preferably diamond. However, the principles disclosed in the document presented here can also be used with other crystalline materials. However, diamond is particularly suitable since the electron spin configuration can easily be cooled to a few mK by irradiation with pump radiation (LB) and the T ₂ times, in particular those of NV centers, are relatively long. In some places in this text only diamond is mentioned. Other crystals can also be used here. In the case of using other crystals made of materials other than diamond, the devices and methods disclosed in this document use other paramagnetic centers with different pump radiation wavelengths (λ _pmp ) and with different fluorescence wavelengths (λ _fl ). Of particular interest here are silicon crystals, germanium crystals and mixed crystals from elements of main group IV of the periodic table. In some applications the crystals are isotopically pure. A material is isotopically pure in the sense of the document presented here if the concentration of isotopes other than the basic isotopes that dominate the material of the crystal (HDNV) is so low that the technical purpose in a for the production and sale of Products of sufficient dimensions is achieved with an economically sufficient production yield. This means that disturbances emanating from such isotopic impurities do not disturb the functionality of the paramagnetic centers at all or at most only slightly. Referring to diamond as the material of the crystal (HDNV), this means that the diamond essentially consists of ¹² C isotopes as basic isotopes, which have no magnetic moment. This is shown by the fact that, for example, in the fluorescence intensity curve and/or the fluorescence delay curve, the secondary fluorescence features (E _102.4.9a , E _102.4.8a , E _102.4.7a , E _102.4.6a , E _102.4.5a , E _102.4.4a , _E 102.4.3a _, E _102.4.2a , E _102.4.1a , E _102.4.1b , E _102.4.2b , E _102.4.3b , E _102.4.4b , E _102.4.5b , E _102.4.6b , E _102.4.7b , E _102.4.8b , E _102.4.9b ) of the 102.4mT main fluorescence feature (E _102.4.0 ) are not pronounced or are weaker. Conversely, it may be desirable that the secondary fluorescent features (E _102.4.9a , E _102.4.8a , E _102.4.7a , E _102.4.6a , E _102.4.5a , E _102.4.4a , E _102.4.3a , E _102.4.2a , E _102.4.1a , E _{102.4.1b ,} E 102.4.2b , E _102.4.3b , E _102.4.4b , E _102.4.5b , E _102.4.6b , E _102.4.7b , E _{102.4 .3b ,} E _102.4.9b ) of the 102.4mT main fluorescence feature (E _102.4,0 ) are particularly pronounced, as this allows for improved interpolation and calibration. Referring to diamond as the material of the crystal (HDNV), this means that in order to increase the intensity of the secondary fluorescence features, the diamond preferably essentially consists of ¹³ C isotopes as basic isotopes, which have a magnetic moment. A less preferred possibility is that to increase the intensity of the side fluorescent features, the diamond preferably comprises an increased proportion of ¹³ C isotopes as basic isotopes that have a magnetic moment. The paper presented here assumes the following distribution as normal isotope distribution: isotope Percentage K ₀ of isotopes with no magnetic moment at 100% C isotope ¹² C 98.94% isotope ¹⁴ C Sense Total fraction K _0G of isotopes with no magnetic moment at 100% C 98.94% Total fraction K _1G of the isotopes with magnetic moment at 100% C 1.06%

A reduction in the factor K _1G by more than 10%, better more than 25%, is described in the document presented here as an isotopically pure diamond crystal (HDNV). An increase in factor K _1G by more than 10% and/or better by more than 25% and/or better by more than 50% and/or by more than 100% and/or by more than 250% and/or better by more than 500% and/or better by more than 1000% and/or better by more than 2500% and/or better by more than 5000% (on K _1G >50%) the document presented here summarizes as an isotopically pure diamond crystal ( HDNV) with enhanced side fluorescent features. The use of such diamonds for quantum technological systems within the meaning of the document presented here and/or within the meaning of the quantum technological devices and methods, in particular within the meaning of the quantum technological sensor devices and measuring methods of the documents DE 10 2020 101 784 B3 , DE 20 2020 106 110 U , PCT / DE 2020 / 100 953 , PCT / EP 2019 / 079 992 , PCT / EP 2020 / 068 110 , PCT / EP 2020 / 070 485 , PCT / DE 2021 / 100 069 , PCT / DE 2020 / 100 827 , WO 2020 239 172 A1 (PCT / DE 2020 / 100 430 ) WO 2001 073 935 A1 and WO 2021 013 308 A1 (PCT / DE 2020 / 100 648 ) and the documents cited in these documents form part of the disclosure presented here insofar as this is permitted by the respective law of the country of registration.

What is written here applies to the entire text presented here.

pump radiation (λ _pmp )

definition

The previous parts of the description use the term pump radiation (LB) for pumping the paramagnetic centers of the crystal (HDNV), which is preferably a diamond. The pump radiation (LB) has a pump radiation wavelength (λ _pmp ). If defect centers other than NV centers are used in diamond, a proposed device or a proposed method can use light or electromagnetic radiation of other pump radiation wavelengths (λ _pmp ) as pump radiation (LB). In order for this pump radiation (LB) with the pump radiation wavelength (λ _pmp ) to reach the paramagnetic centers in the crystal, the structure of electrical lines on the surface of the crystal should allow the pump radiation (LB) to pass in the direction of the respective paramagnetic centers. Alternatively, it is conceivable for the pump radiation (LB) to be fed in from the rear of the crystal (HDNV), so that the pump radiation (LB) does not have to pass through the lines on the upper side of the crystal (HDNV).

this in here 1 The proposed sensor system now preferably uses the HD-NV diamonds (HDNV) with a respective high density of paramagnetic centers in the form of NV centers as sensor elements that record the intensity of the fluorescence radiation (FL) of the paramagnetic centers when irradiated with pump radiation (LB). The pump radiation (LB) with the pump radiation wavelength (λ _pmp ) causes this respective paramagnetic center or the paramagnetic centers or the group or groups of paramagnetic centers of the crystal (HDNV) for the emission of fluorescence radiation (FL) with a fluorescence wavelength (λ _fl ) upon irradiation with the pump radiation (LB) of the pump radiation wavelength (λ _pmp ). Typically, when NV centers in diamond are used as the paramagnetic centers, the fluorescence wavelength (λ _fl ) of the fluorescence emission (FL) from the NV centers is such that they appear red. It has been shown that in connection with NV centers in diamond as the paramagnetic centers of the crystal (HDNV), light with a pump radiation wavelength (λ _pmp ) of the pump radiation (LB) of at most 700 nm and at least 500 nm is particularly suitable as pump radiation (LB). . In connection with the use of other materials for the sensor element and correspondingly other paramagnetic centers, completely different wavelength ranges of the pump radiation wavelength (λ _pmp ) of the pump radiation (LB) can fulfill the same functions in the sensor system then modified in this way. Therefore, the NV centers here represent only an example of an embodiment of such a paramagnetic center. In particular, when using an NV center in diamond as the paramagnetic center in the crystal (HDNV), the pump radiation (LB) should have a pump radiation wavelength (λ _pmp ) in have a wavelength range of 400 nm to 700 nm wavelength and/or better 450 nm to 650 nm and/or better 500 nm to 550 nm and/or better 515 nm to 540 nm. A wavelength of 532 nm is clearly preferred as pump radiation wavelength (λ _pmp ). Light or electromagnetic pump radiation (LB), which is used to perform the same functions when other paramagnetic centers are used, in particular also in materials other than NV centers in diamond, are also possible. The proposed sensor system, for example in FIG. 1, can therefore also be used for other suitable paramagnetic centers, such as ST1 center, SiV center, GeV center, TR12 center, etc. However, the NV center in diamond is particularly suitable and particularly good to produce, for example as described above, and in high density with a high production yield. The pump radiation (LB) of the pump radiation source (PD), preferably a laser, is expediently pulsed as a function of a pulsed alternating component (S5w) of a modulation signal (S5). The pulsed alternating component (S5w) of the modulation signal (S5) is used as a measurement signal, ie as a reference signal for a look-in amplifier (LIA), in order to convert the intensity modulation into modulated electrical currents, in particular photoelectron currents or voltages, for example of a receiver output signal (S0). to amplify the fluorescence radiation (FL) with little noise. It was recognized that the pulsed pulse modulation of the pump radiation (LB) and thus the pulsed pulse modulation of the alternating component (S5w) of the modulation signal (S5) should preferably not have a 50% duty cycle. The alternating component (S5w) of the modulation signal (S5) has an amplitude (S5 _wA ) of the alternating component (S5 _w ) of the modulation signal (S5). At the beginning of a modulation signal period (T _p ), the value of the modulation signal (S5) is the value of the DC component (S5 _g ) of the modulation signal (S5) minus the value of the amplitude (S5 _wA ) of the AC component (S5 _w ). The value of the modulation signal (S5) then increases to the value of the sum of the value of the amplitude (S5 _wA ) of the alternating component (S5 _w ) of the modulation signal (S5) plus the value of the DC component (S5 _g ) of the modulation signal (S5). For a modulation signal plateau time (T _S5Pmpp ), the value of the transmission signal (S5) remains essentially at this value level, and then with a S modulation signal fall time (T _s5pmPd ) to the value from the difference value of the DC component (S5 _g ) of the modulation signal (S5) minus the value of the amplitude (S5 _wA ) of the alternating component (S5 _w ) of the modulation signal (S5). The value of the modulation signal (S5) then essentially remains at this value until the end of the modulation signal period (T _p ), the value of the modulation signal (S5) then again with a modulation signal rise time (T _s5pmpr ) to the value from the sum of the amplitudes (S5 _wA ) of the alternating component (S5 _w ) of the modulation signal (S5) plus the value of the DC component (S5 _g ) of the modulation signal (S5) increases. The maximum value of the pulses of the alternating component (S5 _w ) of the modulation signal (S5) in the form of the sum of the amplitude (S5 _wA ) of the alternating component (S5 _w ) of the modulation signal (S5) plus the value of the direct component (S5 _g ) of the modulation signal is preferred (S5) is maximized in order to achieve a maximum intensity of the pump radiation (LB) at the times when the pump radiation source (LD) emits pump radiation (LB). The purpose of this is that the contrast does not depend linearly on the intensity of the pump radiation (LB) that reaches the paramagnetic centers and increases pump radiation (LB) at high intensities. This is for individual NV centers in diamond, i.e. not for HD-NV diamonds as described here, for example from the publication Staacke, R., John, R., Wunderlich, R., Horsthemke, L, Knolle, W., Laube, C, Glosekötter, P., Burchard, B., Abel, B., Meijer, J. (2020), "Isotropie Scalar Quantum Sensing of Magnetic Fields for Industrial Application", Adv. Quantum Technol., doi :10.1002/qute.202000037, known. We refer in particular to the 3b and 3d that writing. A high density of paramagnetic centers (NV1), such as a high density of NV centers as in a HD-NV diamond as described in this reference, can increase the contrast (KT) over that shown in that reference be increased beyond measure.

The pulse duty factor of the modulation signal (S5) and thus of the modulated modulation signal (S5 _w ) is defined here as the modulation signal pulse duration (T _s5pmp ) divided by the modulation signal period (T _p ). ned. Modulation signal pulse duration (T _s5pmp ) plus modulation signal complementary time (T _s5c ) are equal to the modulation signal period (T _P ) here. The alternating component (S5 _w ) of the modulation signal (S5) and thus the modulation signal (S5) with a duty cycle of the alternating component (S5 _w ) of the modulation signal (S5) is preferably less than 50% and/or better less than 40% and/or better less than 30 % and/or better less than 20% and/or better less than 10% pulse modulated. It is therefore preferably an ultra-short pulse with the highest possible amplitude. Accordingly, the modulated modulation signal (S5 _w ) is preferably pulse-modulated with a duty cycle of less than 50% and/or better less than 40% and/or better less than 30% and/or better less than 20% and/or better less than 10%. It is therefore preferably an ultra-short pulse. This ultra-short pulse is preferably converted with the greatest possible amplification into a corresponding short intensity pulse that is as intense as possible with the intensity of the pump radiation (LB). Since the pump radiation source (LD) is driven with the modulation signal (S5), it typically reproduces the transmission signal (S5) delayed by a transmission delay (A _tipmp ). For the calculation of many applications, this transmission delay (A _tipmp ) can be assumed to be 0 s for simplification. The pump radiation pulse duration (T _ipmp ) is defined here in such a way that the intensity pulse of the intensity of the pump radiation (LB) has a pump radiation intensity maximum and that the pump radiation pulse duration (T _ipmp ) of an intensity pulse of the pump radiation (LB) starts at the first point in time when 50% of the Intensity value of the pump radiation intensity maximum minus the possibly existing bias value of the intensity of the pump radiation (LB), by the momentary intensity of the intensity pulse of the pump radiation (LB) minus the possibly existing bias value of the intensity of the pump radiation (LB) and that the pump radiation pulse duration (T _ipmp ) of an intensity pulse of the pump radiation (LB) at the second point in time when the intensity value of the pump radiation intensity maximum minus the possibly existing bias value of the intensity of the pump radiation (LB) falls below 50%, due to the current intensity of the intensity pulse of the pump radiation (LB ) minus the possibly before nd bias value of the intensity of the pump radiation (LB) ends.

ZPL table

The table is only an exemplary compilation of some possible paramagnetic centers. The functionally equivalent use of other paramagnetic centers in other materials of the crystal (HDNV) is explicitly possible. The pump radiation wavelengths (λ _pmp ) of the pump radiation (LB) are also exemplary. Other pump radiation wavelengths (λ _pmp ) are generally possible if they are shorter than the wavelength of the ZPL to be excited. Material of Crystal (HDNV) impurity center ZPL exemplary pump radiation wavelength (λ _pmp ) reference diamond NV Center 520nm, 532nm diamond SiV center 738nm 685 nm /2/, /3/, /4/ diamond GeV center 602 nm 532nm /4/, /5/ diamond SnV center 620nm 532nm /4/, /6/ diamond PbV center 520nm, 450nm /4/, /7/ 552 nm /4/, /7/ 715 nm 532nm /7/ diamond ST1 center 555 nm 532nm /15/ diamond TR12 center 471 nm 410nm /16/ silicon G center 1278.38nm 637 nm /8th/ silicon carbide V _SI center 862nm(V1) 4H, 730nm /1/, /9/, /10/ 858.2nm(V1') 4H 730nm /1/, /9/, /10/ 917nm(V2) 4H, 730nm /1/, /9/, /10/ 865nm(V1) 6H, 730nm /1/, /9/, /10/ 887nm(V2) 6H, 730nm /1/, /9/, /10/ 907nm(V3) 6H 730nm /1/, /9/, /10/ silicon carbide DV center 1078-1132nm 6H 730nm /9/ silicon carbide V _C V _SI center 1093-1140nm 6H 730nm /9/ silicon carbide CAV center 648.7nm 4H, 6H, 3C 730nm /9/ 651.8nm 4H, 6H, 3C 730nm /9/ 665.1nm 4H, 6H, 3C 730nm /9/ 668.5nm 4H, 6H, 3C 730nm /9/ 671.7nm 4H, 6H, 3C 730nm /9/ 673nm 4H, 6H, 3C 730nm /9/ 675.2nm 4H, 6H, 3C 730nm /9/ 676.5nm 4H, 6H, 3C 730nm /9/ silicon carbide N _C V _SI center 1180nm-1242nm 6H 730nm /9/, /13/, /14/

List of reference literature for the above table

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Miscellaneous

The above description is not exhaustive and does not limit this disclosure to the examples shown and/or described. Other variations to the disclosed examples may be understood and practiced by those of ordinary skill in the art given the drawings, disclosure, and claims. The indefinite article "a" or "an" and its inflections do not exclude a plurality, while the mention of a definite number of elements does not exclude the possibility of there being more or fewer elements. A single entity may perform the functions of multiple elements recited in the disclosure, and conversely, multiple elements may perform the function of one entity. Numerous alternatives, equivalents, variations, and combinations are possible without departing from the scope of the present disclosure.

Unless otherwise stated, all features of the present invention can be freely combined with one another. This applies to the entire document presented here, in particular every statement and every combination of noun and adjective in the document presented here. Unless otherwise stated, the features described in the description of the figures can also be freely combined with the other features as features of the invention. A limitation of individual features of the exemplary embodiments to the combination with other features of the exemplary embodiments is expressly not intended. In addition, physical features of the device can also be reworded as method features and method features can be reworded as physical features of the device. Such a reformulation is thus automatically disclosed. The applicable claim results from the applicable claims.

In the foregoing detailed description, reference is made to the accompanying drawings. The examples in the specification and drawings should be considered as illustrative and not limiting on the specific example or element described. Several examples can be derived from the foregoing description and/or the drawings and/or the claims by modifying, combining or varying certain elements. Furthermore, examples or elements that are not literally described can be derived from the description and/or the drawings by a person skilled in the art.

List of cited writings

• DE 1 474 100 A ,
• DE 10 2020 101 784 B3 ,
• DE 20 2020 106 110 U ,
• EP 3 427 469 B1 ,
• EP 3 745 216 B1 ,
• WO / 2017 / 148 772 A1 (PCT / EP 2017 / 054 073 ),
• WO / 2021 / 089 091 A1 (PCT / DE 2020 / 100 953 ),
• WO / 2020 / 089 465 A1 (PCT / EP 2019 / 079 992 ),
• WO / 2020 / 260 640 A1 (PCT / EP 2020 / 068 110 ),
• WO / 2021 / 018 654 A1 (PCT / EP 2020 / 070 485 ),
• WO / 2021 / 151 429 A1 (PCT / DE 2021 / 100 069 ),
• WO / 2021 / 083 448 A1 (PCT / DE 2020 100 827 ),
• WO / 2020 / 239 172 A1 (PCT / DE 2020 / 100 430 ),
• WO / 2001 / 073 935 A1 (PCT / US 2001 / 009 553 ),
• WO / 2021 / 013 308 A1 (PCT / DE 2020 / 100 648 ),
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The disclosure content of the following documents is, insofar as this is permissible according to the respective national law, a complete part of the disclosure presented here with this document.

• DE 1 474 100 A ,
• DE 10 2020 101 784 B3 ,
• DE 20 2020 106 110 U ,
• EP 3 427 469 B1 ,
• EP 3 745 216 B1 ,
• WO/2017/148 772 A1 (PCT / EP 2017 / 054 073 ),
• WO/2021/089 091 A1 (PCT / DE 2020 / 100 953 ),
• WO/2020/089 465 A1 (PCT / EP 2019 / 079 992 ),
• WO/2020/260 640 A1 (PCT / EP 2020 / 068 110 ),
• WO/2021/018 654 A1 (PCT / EP 2020 / 070 485 ),
• WO/2021/151 429 A1 (PCT / DE 2021 / 100 069 ),
• WO/2021/083 448 A1 (PCT / DE 2020 100 827 ),
• WO/2020/239 172 A1 (PCT / DE 2020 / 100 430 ),
• WO/2001/073 935 A1 (PCT / U.S. 2001/009 553 ),
• WO/2021/013 308 A1 (PCT / DE 2020 / 100 648 ),
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    1. /1/ Marina Radulaski, Matthias Widmann, Matthias Niethammer, Jingyuan Linda Zhang, Sang-Yun Lee, Torsten Rendler, Konstantinos G. Lagoudakis, Nguyen Tien Son, Erik Janzen, Takeshi Ohshima, Jörg Wrachtrup, Jelena Vučković, "Scalable Quantum Photonics with Single Color Centers in Silicon Carbide”, Nano Letters 17 (3), 1782-1786 (2017), DOI: 10.1021/acs.nanolett.6b05102, arXiv:1612.02874.
    2. /2/ C Wang, C Kurtsiefer, H Weinfurter, and B Burchard, "Single photon emission from SiV centers in diamond produced by ion implantation" J. Phys. B: At. Mol.Opt. Phys., 39(37), 2006.
    3. /3/ Björn Tegetmeyer, "Luminescence properties of SiV-centers in diamond diodes" doctoral thesis, University of Freiburg, January 30, 2018.
    4. /4/ Carlo Bradac, Weibo Gao, Jacopo Forneris, Matt Trusheim, Igor Aharonovich, "Quantum Nanophotonics with Group IV defects in Diamond", DOI:10.1038/s41467-020-14316-x, arXiv:1906.10992.
    5. /5/ Rasmus H∅y Jensen, Erika Janitz, Yannik Fontana, Yi He, Olivier Gobron, Ilya P. Radko, Mihir Bhaskar, Ruffin Evans, Cesar Daniel Rodriguez Rosenblueth, Lilian Childress, Alexander Huck, Ulrik Lund Andersen, "Cavity- Enhanced Photon Emission from a Single Germanium-Vacancy Center in a Diamond Membrane”, arXiv:1912.05247v3 [quant-ph] 25 May 2020.
    6. /6/ Takayuki Iwasaki, Yoshiyuki Miyamoto, Takashi Taniguchi, Petr Siyushev, Mathias H. Metsch, Fedor Jelezko, Mutsuko Hatano, "Tin-Vacancy Quantum Emitters in Diamond", Phys. Rev. Lett. 119, 253601 (2017), DOI: 10.1103/PhysRevLett.119.253601, arXiv:1708.03576 [quant-ph].
    7. /7/ Matthew E. Trusheim, Noel H. Wan, Kevin C. Chen, Christopher J. Ciccarino, Ravishankar Sundararaman, Girish Malladi, Eric Bersin, Michael Walsh, Benjamin Lienhard, Hassaram Bakhru, Prineha Narang, Dirk Englund, "Lead- Related Quantum Emitters in Diamond” Phys. Rev. B 99, 075430 (2019), DOI: 10.1103/PhysRevB.99.075430, arXiv:1805.12202 [quant-ph].
    8. /8/ M. Hollenbach, Y. Berencen, U. Kentsch, M. Helm, GV Astakhov "Engineering telecom single photon emitters in silicon for scalable quantum photonics" Opt. Express 28, 26111 (2020), DOI: 10.1364/OE.397377 , arXiv:2008.09425 [physics.app-ph].
    9. /9/ Castelletto and Alberto Boretti, "Silicon carbide color centers for quantum applications" 2020 J. Phys. Photonics2 022001.
    10. /10/ V. Ivády, J. Davidsson, NT Son, T. Ohshima, IA Abrikosov, A. Gali, "Identification of Si-vacancy related room-temperature qubits in 4H silicon carbide", Phys. Rev.B, 2017, 96,161114.
    11. /11/ J. Davidsson, V. Ivády, R. Armiento, NT Son, A. Gali, IA Abrikosov, "First principles predictions of magneto-optical data for semiconductor point defect identification: the case of divacancy defects in 4H-SiC" , New J. Phys., 2018, 20, 023035.
    12. /12/ J Davidsson, V Ivády, R Armiento, T Ohshima, NT Son, A Gali, IA Abrikosov "Identification of divacancy and silicon vacancy qubits in 6H-SiC", Appl. physics Latvia 2019, 114, 112107.
    13. /13/ SA Zargaleh, S Hameau, B Eble, F Margaillan, HJ von Bardeleben, JL Cantin, W Gao, "Nitrogen vacancy center in cubic silicon carbide: a promising qubit in the 1.5 µm spectral range for photonic quantum networks” Phys. Rev.B, 2018, 98, 165203.
    14. /14/ SA Zargaleh et al "Evidence for near-infrared photoluminescence of nitrogen vacancy centers in 4H-SiC" Phys. Rev.B, 2016, 94, 060102.
    15. /15/ Sergey Gaponenko, Lorenzo Pavesi, Luca Dal Negro"Towards the First Silicon Laser (NATO Science Series II: Mathematics, Physics and Chemistry, 93, Volume 93)"Springer; 1st edition 2003 (13 Jun. 2008), ISBN -10: 1402011946.
    16. /16/ Motoichi Ohtsu, "Silicon Light-Emitting Diodes and Lasers: Photon Breeding Devices using Dressed Photons (Nano-Optics and Nanophotonics)"Springer; 1st Edition 2016 edition (12 Jun. 2018), ISBN-10: 3319824791.
    17. /17/ Ozdal Boyraz, Qiancheng Zhao, "Silicon Photonics Bloom" Mdpi AG (27 Aug. 2020) ISBN-10: 3039369083 and WO 2020 239 172 A1 (PCT / DE 2020 / 100 430 ).
    18. /18/ Karl-Heinz Brenner, "Microoptics: From Technology to Applications (Springer Series in Optical Sciences) (Springer Series in Optical Sciences, 97, Volume 97)", Springer; first edition 2004 edition (14 Mar. 2012), ISBN-10: 1441919317 and WO 2020 239 172 A1 (PCT / DE 2020 / 100 430 ).

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• DE 102021114 [0001, 0018, 0020, 0024, 0025, 0026, 0028]
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• EP2019079992 [0009, 0655, 0664]
• EP2020068110 [0009, 0655, 0664]
• EP2020070485 [0009, 0655, 0664]
• DE 2021100069 [0009, 0655, 0664]
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• DE 2020100430 [0009, 0256, 0257, 0590, 0592, 0655, 0664]
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• EN 202020106 [0010]
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• DE 202020106110 U [0150, 0160, 0182, 0183, 0655, 0664]
• WO 2001073935 A2 [0254]
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• DE 102014219550 A1 [0279]
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• EP 3745216 B1 [0587, 0644, 0664]
• DE 1474100 A [0640, 0664]
• EP 3427469 B1 [0640, 0664]
• WO /2017148772 A1 [0664]
• EP2017054073 [0664]
• WO /2021089091 A1 [0664]
• WO /2020089465 A1 [0664]
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• WO /2021083448 A1 [0664]
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• WO /2021013308 A1 [0664]

Claims (10)

Method for operating a quantum measurement system and/or a quantum technological device ▪ wherein the quantum measurement system or the quantum technological device includes device parts that are consumers of electrical energy ▪ with the steps ▪ Carrying out a quantum technological measurement with the help of at least one quantum dot and/or one or more paramagnetic centers and/or one or more pairs of coupled paramagnetic centers and/or one or more groups of paramagnetic centers and/or one or more pairs of coupled paramagnetic centers of one or more Clusters of paramagnetic centers and/or one or more clusters of pairs of paramagnetic centers and/or one or more NV centers in diamond and/or a multiplicity of quantum dots and/or a multiplicity of paramagnetic centers and/or a multiplicity of NV centers within one first period and ▪ where in particular the paramagnetic centers can be coupled to nuclear spins of atoms in the vicinity of paramagnetic centers of these paramagnetic centers; ▪ Stopping or refraining from carrying out the quantum technological measurement within a second period of time, ▪ where the first period is different from the second period and ▪ where the first period and the second period do not overlap in time, ▪ Characterized by the step ▪ Supplying at least some of the device parts that are consumers of electrical energy with electrical energy from an energy reserve (BENG) in the first time periods in which the measurement takes place. procedure after claim 1 with the step of ▪ charging the energy reserve (BENG) in the second time periods, in particular by means of a charging device (LDV), in particular in the form of a voltage regulator or a current regulator. procedure after claim 1 or 2 ▪ wherein the energy reserve (BENG) comprises a battery, in particular a rechargeable battery, and/or an accumulator and/or a capacitor and/or a coil Method according to one or more of the Claims 1 until 3 ▪ the energy reserve (BENG) being rechargeable and ▪ the energy reserve (BENG) being charged with energy using a charging device (LDV), ▪ comprising the step ▪ electrically disconnecting the charging device (LDV) in the first time periods, for example using a disconnecting device (TS), from at least part of the other device parts of the quantum measurement system and/or the quantum technological device. procedure after claim 4 ▪ wherein the separation takes place by means of a separation device (TS), in particular in the form of a switch or a transistor or a diode or another semiconductor switch or a relay or a MEMS relay or the like. Quantum measurement system and/or quantum technological device ▪ wherein the quantum measurement system and/or the quantum technological device performs a quantum technological measurement within a first period of time with the aid of at least one quantum dot and/or a paramagnetic center and/or a NV center in diamond and/or a large number of quantum dots and/or a plurality of paramagnetic centers and/or a plurality of NV centers and ▪ wherein the quantum measurement system and/or the quantum technological device does not perform a quantum technological measurement within a second period of time or stops it and ▪ wherein the first period of time differs from the second period of time and ▪ wherein the first time period and the second time period do not overlap in time and ▪ wherein the quantum measurement system and/or the quantum technological device comprise parts of the device that are consumers of electrical energy, characterized in that ▪ that the quan ten measurement system and / or the quantum technological device comprises an energy reserve (BENG) and ▪ that this energy reserve (BENG) supplies at least some of the consumers of electrical energy with electrical energy in the first periods in which the quantum technological measurement takes place. Quantum measurement system and/or quantum technological device claim 6 ▪ wherein the quantum measurement system and/or the quantum technological device comprises a charging device (LDV) and ▪ wherein the charging device, in particular in the form of a voltage regulator or a current regulator, charges the energy reserve (BENG) in the second time periods. Quantum measurement system and/or quantum technological device claim 6 and/or 7 ▪ wherein the energy reserve (BENG) comprises a battery, in particular a rechargeable battery, and/or an accumulator and/or a capacitor and/or a coil and/or a mechanical energy storage device. Quantum measurement system and/or quantum technological device according to one or more Claims 6 until 8th ▪ wherein the quantum measurement system and/or the quantum technological device has a separating device (TS) and ▪ wherein the separating device (TS) the charging device (LDV) in the first time periods ◯ of at least some of the remaining device parts of the quantum measurement system and/or the quantum technological device and /or ◯ electrically separates from at least some of the device parts of the quantum measurement system and/or the quantum technological device, in particular those that are sensitive to fluctuations in the electrical supply voltage and/or fluctuations in the electrical supply current. Quantum measurement system and/or quantum technological device claim 9 ▪ wherein the separating device (TS) comprises a switch or a transistor or a diode or another semiconductor switch or a relay or a MEMS relay or the like.

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