DE102021105388A1 - Sputtering device and coating arrangement - Google Patents

Abstract

According to various embodiments, a sputtering apparatus (151) may include: a housing (152) having a cavity (161) and an anode (152a), the anode (152a) defining the cavity (161); a support device (154) for supporting a target (302) such that it is at least partially extended into the cavity (161); a gas supply device (156) having one or more than one gas outlet (156d) for supplying the cavity (161) with gas.

Description

Various exemplary embodiments relate to a sputtering device and a coating arrangement.

In general, workpieces or substrates can be processed or treated, e.g., machined, coated, heated, etched, and/or structurally altered. One method for coating a substrate is, for example, sputtering (so-called sputtering or the sputtering process). For sputtering, a plasma-forming gas can be ionized by means of a cathode (also referred to as sputter cathode), it being possible for a material to be deposited (target material) to be atomized by means of the plasma formed in the process. The sputtered target material can then be brought to a substrate where it can deposit and form a layer.

Sputtering without reactive gas (i.e. if the coating material does not react) is generally relatively stable, for example without further control mechanisms or only minor interventions. However, the plasma and thus the resulting coating can be inhomogeneous due to the construction or due to other disturbance variables.

If reactive gas is added, the reaction dynamics can be prone to failure and may only be bistable. Such bistable reaction dynamics can, for example, tend to drift automatically into one of two (apparently stable) reaction modes, which are referred to as the so-called underreactive reaction mode and fully reactive reaction mode. The susceptibility to failure is conventionally counteracted by controlling and/or regulating the supply of gas. Due to these reaction dynamics, which are prone to failure, even the smallest spatial and/or temporal variations in the chemical composition of the process atmosphere to which the sputtering process is exposed can lead to considerable inhomogeneity of the plasma and thus to the resulting coating or even to its unusability.

The inhomogeneity of the plasma is conventionally compensated for by influencing the spatial distribution of the process atmosphere (also referred to as trimming). This results in the possibility of influencing the layer formation for each point at which the process atmosphere is trimmed (influenced).

According to various embodiments, it was recognized that supplying the plasma with a (e.g. trimmed) gas clearly affects the plasma more spatially than desired, consumes more gas than necessary, and can often itself become a disturbance.

For example, it has been recognized that in the case of a sputtering device with two targets, it is difficult to influence only one of the two targets, since the trimmed gas often affects both targets (also referred to as crosstalk).

For example, it has been recognized that a gas outlet directed centrally onto the substrate is always exposed to interaction with the plasma, as a result of which additional design measures to suppress charging, heating and/or coating of the gas distributor may be required. Such a central gas distributor is also unsuitable for compensating for a local inhomogeneity in the plasma (for example as a result of a pump arranged on one side) specifically for only one tube target (also referred to as cathode tube), since it always acts on both tube targets.

For example, it was recognized that an inflow of gas directed directly at the plasma can in part be withdrawn almost unused by the pumps, so that more gas than necessary is consumed.

According to various embodiments, it was clearly recognized that the effect of a gas outlet (e.g. the gas distribution provided with it on the target surface), which flows directly around the tubular target from behind, is improved compared to a gas distributor, which lets the gas in towards the substrate.

According to various embodiments, a sputtering device and a coating arrangement are provided which enable a more efficient gas supply (e.g. gas trimming) with an increased local effect on the plasma density, resp. Layer thickness distribution, for example independently for each cathode tube, enables and/or is better protected from the influence of electron bombardment and from parasitic coating. This can be used, for example, in a gas distributor for a double-tube magnetron with a dedicated anode for each cathode tube. For example, gas consumption is reduced. By analogy, the configuration provided here can also enable the operation of a single cathode tube, e.g. without losses in terms of trimmability, resp. Layer thickness uniformity allow. For example, an existing sputtering device can be retrofitted with little effort in order to implement the configuration provided herein.

• 1 bis 8 eine Sputtervorrichtung gemäß verschiedenen Ausführungsformen in verschiedenen schematischen Ansichten; und
• 9 eine Beschichtungsanordnung gemäß verschiedenen Ausführungsformen in einer schematischen Querschnittsansicht.

Show it

• 1 until 8th a sputtering device according to various embodiments in various schematic views; and
• 9 a coating arrangement according to various embodiments in a schematic cross-sectional view.

In the following detailed description, reference is made to the accompanying drawings that form a part hereof, and in which is shown by way of illustration specific embodiments in which the invention may be practiced. In this regard, directional terminology such as "top", "bottom", "front", "back", "front", "rear", etc. is used with reference to the orientation of the figure(s) being described. Because components of embodiments can be positioned in a number of different orientations, the directional terminology is used for purposes of illustration and is in no way limiting. It is understood that other embodiments may be utilized and structural or logical changes may be made without departing from the scope of the present invention. It is understood that the features of the various exemplary embodiments described herein can be combined with one another unless specifically stated otherwise. The following detailed description is, therefore, not to be taken in a limiting sense, and the scope of the present invention is defined by the appended claims.

Within the scope of this description, the terms "connected", "connected" and "coupled" are used to describe both a direct and an indirect connection (e.g. ohmic and/or electrically conductive connection or fluid-conductive connection), a direct or indirect connection and a direct or indirect coupling. In the figures, identical or similar elements are provided with identical reference symbols, insofar as this is appropriate.

According to various embodiments, the term "coupled" or "coupling" can be understood in the sense of a (e.g. mechanical, hydrostatic, thermal and/or electrical), e.g. direct or indirect, connection and/or interaction. For example, multiple elements may be coupled together along an interaction chain along which interaction can be exchanged, e.g., a fluid (so that they are fluidly coupled). For example, two elements coupled together can exchange an interaction with each other, e.g., a mechanical, hydrostatic, thermal and/or electrical interaction. A coupling of several vacuum components (e.g. valves, pumps, gas lines, chambers, etc.) to one another can include that they are coupled to one another in a fluid-conducting manner. According to various embodiments, "coupled" may be understood to mean a mechanical (e.g., physical) coupling, such as by means of direct physical contact. A clutch may be configured to transmit mechanical interaction (e.g., force, torque, etc.).

The actual state of an entity (e.g. a device, a system or an operation or process) can be understood as the state of the entity that is actually present or can be detected by sensors. The desired state, i.e. a specification, can be understood as the target state of the entity. Controlling can be understood as intentional influencing of the current state (also referred to as the actual state) of the entity. The current state can be changed according to the specification (also referred to as the target state), e.g. by changing one or more than one operating parameter (then also referred to as the manipulated variable) of the entity, e.g. by means of an actuator. Regulation can be understood as controlling, whereby a change in status due to disturbances is also counteracted. For this purpose, the actual state is compared with the target state and the entity is influenced in such a way, e.g. by means of an actuator, that the deviation of the actual state from the target state is minimized. In contrast to the pure forward sequence control, the regulation thus implements a continuous influence of the output variable on the input variable, which is brought about by the so-called control loop (also referred to as feedback). In other words, it can be understood here that regulation can be used as an alternative or in addition to the control (or actuation) or regulation can take place as an alternative or in addition to the control.

With regard to the layer-forming process, reference is made here to so-called sputtering (also referred to as cathode atomization). The term "sputtering" refers to the atomization of a material (also known as a coating material or target material) using a plasma. The atomized components of the coating material (eg individual atoms and/or ions) are separated from one another and can be deposited elsewhere, for example to form a layer. The sputtering can take place by means of a so-called sputtering device, which can optionally have one or more than one magnet system (then also referred to as a magnetron). The coating material can be provided by means of a so-called sputter target (also referred to as target for short), which can be tubular (also referred to as tubular target) or plate-shaped (also referred to as plate target or planar target). To generate the plasma, a voltage (also referred to as sputtering voltage) can be applied to the sputtering target (also referred to as target for short), so that the sputtering target is operated as a cathode. The sputtering voltage can, for example, be a direct voltage, for example a pulsed direct voltage. Even if the sputtering voltage has an alternating voltage, the terminology of the cathode is often retained.

For sputtering, the sputtering target can be arranged in a vacuum processing chamber (also referred to simply as a vacuum chamber), so that the sputtering can take place in a vacuum. For this purpose, the environmental conditions (the process parameters) within the vacuum processing chamber (eg process pressure, temperature, gas composition, etc.) can be set or regulated during sputtering. For example, a working gas can be provided inside the vacuum processing chamber, which denotes the plasma-forming gas or the plasma-forming gas mixture. The vacuum processing chamber can, for example, be set up to be airtight, dust-tight and/or vacuum-tight, so that a gas atmosphere with a predefined composition (also referred to as working atmosphere or process atmosphere) or a target pressure (also referred to as working pressure or process pressure) can be created inside the vacuum processing chamber referred to) may be provided (e.g., according to a setpoint). The vacuum chamber can be set up in such a way that a vacuum (ie a pressure of less than 0.3 bar) and/or a pressure in a range from approximately 1 mbar to approximately 10 ^-3 mbar (in other words fine vacuum) or less is provided therein can, e.g. a pressure in a range from about 10 ^-3 mbar to about 10 ^-7 mbar (in other words high vacuum) or less can be provided, e.g. a pressure of less than high vacuum, e.g. less than about 10 ^-7 mbar (with other words, ultra-high vacuum) may be or may be provided.

Based on this, a process gas can be supplied to the sputtering process or the plasma, so that a process vacuum (also referred to as process atmosphere) can be generated in the vacuum chamber as an equilibrium between the gas extracted (pumped out) from the vacuum chamber and the process gas supplied to the vacuum chamber. The process vacuum can have a pressure (also referred to as process pressure or total pressure) of less than 0.3 bar or less, for example in a range from approximately 1 mbar to approximately 10 ^-3 mbar.

The process gas can have a so-called working gas and/or one or more than one reactive gas. Working gas and reactive gas(es) can be supplied separately from one another or together as a gas mixture, for example by means of the gas supply device. For example, a process gas with the gas composition of the working gas can be supplied. For example, a process gas with the gas composition of the reactive gas can be supplied. For example, a process gas with the gas composition of a gas mixture of the reactive gas and the working gas can be supplied.

The plasma can then be formed using the working gas (also referred to as plasma-forming gas). According to various embodiments, the working gas may include a gaseous material that is inert, in other words, that participates in little or no chemical reactions. A working gas can, for example, be or be defined by the coating material used and be or be adapted to it. For example, a working gas can include a gas or a gas mixture which does not react with the coating material to form a solid or is even inert towards it. The working gas can, for example, contain or be formed from one or more than one noble gas or another inert gas. Examples of the noble gas include helium, neon, argon (Ar), krypton, xenon, radon.

If one or more than one reactive gas is supplied to the plasma or the sputtering process, this can have a higher chemical reactivity than the working gas, e.g. with regard to the target material. In other words, the sputtered target material can react with the reactive gas (if any) faster (i.e., form more reaction product per time) than with the working gas (e.g., if it chemically reacts with the working gas at all).

In order to effectively atomize the target (also referred to as sputtering), the target can be rotated around (illustratively around) a magnet system. For this purpose, the target or its target material can be tubular (also referred to as a tubular target), with the magnet system being able to be arranged inside the tubular target, so that the tubular target can be rotated about the magnet system. The tubular target can have a tube, for example, on which the target material can be attached as a layer on an outer lateral surface of the tube and the lateral surface of the tube can partially cover. However, the tubular target can also be formed from the target material.

The tube target can be rotatably mounted by means of a bearing device, wherein the bearing device can optionally provide a supply of the tube target (e.g. with process power and cooling fluid). For example, the bearing device can have two so-called end blocks, by means of which the tube target is mounted at opposite end sections, wherein the end blocks can provide a supply of the tube target (e.g. with process power and cooling fluid). Furthermore, the end blocks can also be set up to hold the magnet system inside the tubular target (then also referred to as a magnetron end block).

If the storage device has two end blocks, one of the end blocks (the so-called drive end block) can have a drive train which is coupled to a drive device (also referred to as a target drive) for rotating the tubular target; and/or the other of the end blocks (the so-called media end block) may have a fluid line for supplying and removing cooling fluid (e.g. a water-based mixture) which may be passed through the target. For example, the two end blocks are mounted in a suspended manner from a chamber ceiling (i.e., a chamber lid).

However, exactly one end block (also referred to as a compact end block) can also be used, which has the drive train and the fluid line and thus jointly provides the functions of a drive end block and a media end block. For example, the side of the tubular target opposite the compact endblock can be cantilevered (i.e., hang freely) in what is referred to as a cantilever configuration. The compact endblock may be mounted in a cantilever configuration on a sidewall of the vacuum chamber through which the axis of rotation of the tubular target extends. However, the side of the tubular target opposite the compact end block can also be mounted by means of a bearing block (clearly a counter bearing), which is referred to as a bearing block configuration. The pedestal can also be provided by means of a passive end block, i.e. an end block which does not exchange energy or material with the tube target but only supports it.

Reference is made herein to a tubular target as an exemplary target, it being understood that what has been described for the tubular target may apply by analogy to a planar target. In contrast to the tubular target, however, the planar target can be stored stationary during sputtering, i.e. always turn the same side to the plasma.

The bearing device can optionally have a carrier (also referred to as a magnet system carrier), which is set up to hold the magnet system. The magnet system carrier can, for example, be hollow (e.g. having a tube) and optionally be fluidically coupled at the front to an end block which holds the magnet carrier (e.g. to its fluid line), so that the cooling fluid can be exchanged with the end block. On the side opposite the end block, the tube can be closed at the end, for example, and can have a lateral opening there through which the cooling fluid can pass. The magnet system carrier can be round or square, e.g. having a round tube or a square tube. The magnet carrier and/or the magnet system can have a length (expansion along the axis of rotation) in a range from approximately 1 m to approximately 6 m, for example in a range from approximately 2 m to approximately 5 m.

The drive device can be understood here as a converter which is set up to convert electrical energy into mechanical energy. The drive device can, for example, comprise an electric motor (e.g. with electric coils).

Reference is herein made to a gas supply device. The gas supply device is set up to supply one or more than one area (also referred to as supply area) of the sputtering device with the process gas (also referred to simply as gas). Basically, the process gas can include the working gas and/or the reactive gas. Functionally, a supply area is an area that is located directly next to the gas supply device (e.g. adjacent to it) and is supplied with an inflow of process gas (also referred to as gas inflow) by means of the gas supply device, with the gas inflow being influenced individually for each supply area (e.g. set and /or regulated). Several supply areas (e.g. arranged directly next to one another) can be influenced (e.g. adjusted and/or regulated) independently of one another, for example in terms of their gas inflow.

Adjoining supply areas can optionally exchange the process gas with one another, which can result in their gas pressure being linked to one another and/or their gas composition being linked to one another.

In order to simplify the understanding below, those components of the gas supply device that supply the process gas to exactly one supply area are grouped together as a so-called supply group. Accordingly, the gas supply device can have at least one (ie one or more than one) supply group per supply area, which is set up to supply the process gas to the supply area. Each supply group can have one or more than one gas outlet, for example per gas composition to be supplied, which is directed towards and/or adjoins the supply area. Each supply group can have a gas connection, eg per gas composition to be supplied, for connecting the supply group to at least one corresponding gas source (eg having the working gas, the reactive gas or a gas mixture). For example, the at least one gas source can have a gas source for each gas composition to be supplied, which is coupled to the supply group.

For example, a number of supply groups can be greater than 1, e.g. greater than 2, e.g. greater than 5, e.g. greater than 10. For example, a number of gas outlets per supply group and/or per gas composition to be supplied can be greater than 1, e.g. greater than 2, e.g. greater than 5, e.g. greater than 10.

Each supply group can have a gas line, e.g. Several gas outlets of the same supply group can be coupled to one another in a fluid-conducting manner by means of the gas line (also referred to as gas supply channel or gas supply line). Each gas line can have a cavity (also referred to as interior space or line space) as a fluid-conducting connection between the one or more than one gas outlet directed towards the supply area and the gas connection of the supply group.

The last link of the gas supply device, which has a number of gas outlets of the gas supply device arranged next to one another (e.g. in a row) (e.g. coupled to one another), is also called the gas distributor for simplified purposes. The gas distributor can, for example, be part of the gas line or at least be coupled to it. For example, the gas supply device can have one or more than one gas distributor, of which each gas distributor can optionally have or hold the gas outlets of one or more than one supply group.

Each gas distributor can optionally have a so-called binary distribution structure, e.g. Each line section on the outlet side of the branching level adjacent to the gas distributor is coupled to a gas outlet of the gas distributor. This achieves that the process gas is divided more evenly over several gas outlets of the supply group.

In a less complex implementation, the gas supply device, e.g. each gas distributor, can have at least one hollow body (also referred to as a gas duct), e.g. a tube, the cavity of which (e.g. exactly) provides a line space or is at least part of it. Each gas outlet can have a through-opening in a wall of the gas duct (also referred to as duct wall). By analogy, the gas connection can optionally have a through-opening in a duct wall, or the gas connection can be coupled to the gas duct in some other way (e.g. by means of a section of the gas line).

In a more complex implementation, the gas supply device, e.g. each gas distributor, can have at least one gas duct (e.g. a tube) with a plurality of segments (also referred to as a segmented hollow body or segmented gas duct), each segment (also referred to as a gas duct segment or hollow segment) having a cavity having. Cavities (or segments) of the segmented gas channel that are directly adjacent to one another can be separated from one another, for example by means of a wall. The cavity of each segment may provide, or be part of, the routing space of a service group. Each gas outlet can have a through opening in a wall of the segment. Optionally, by analogy, the gas inlet can have a through opening in a wall of the segment, or the gas inlet can be otherwise coupled (e.g. by means of a section of the gas line) to the wall of the segment.

1A 15 illustrates a sputtering device 151 (eg a sputtering group) according to various embodiments 100 in a schematic plan view or cross-sectional view (eg looking from direction 105) and 1B the sputtering device 151 in a schematic cross-sectional view (eg looking towards direction 105). The sputtering device 151 may have a housing 152, a bearing device 154 and a gas supply have direction 156. The housing 152 may include a cavity 161 (also referred to as anode compartment 161) and an anode 152a.

The anode compartment 161 can have one or more than one supply area, for example.

Anode compartment 161 may extend into housing 152 from direction 105 (also referred to as reference direction). The anode chamber 161 can be open or uncovered in direction 105 by means of an opening 152o of the housing 152 (also referred to as housing opening 152o).

The anode space 161 can be oriented in a first direction (e.g. direction 103, cf. 2 ) which is transverse to the reference direction 105, for example be elongated or have at least one extension 154d (also referred to as cavity length 154d). The cavity length 154d can, for example, be greater than an extension of the anode space 161 (also referred to as cavity width) along a second direction (eg direction 101, cf. 2 ) which is transverse to the first direction and transverse to the reference direction 105.

The anode 152a may delimit the anode compartment 161 (e.g. in or opposite to the second direction), e.g. on one or more than one side of the anode compartment 161, e.g. on two sides of the anode compartment 161 (which are spaced apart by the cavity width) or on three or more sides of the anode compartment 161. The housing 152 (e.g., its anode 152a) may comprise one or more than one panel, each panel defining the anode compartment 161, for example. Multiple plates of anode 152a may be electrically coupled together. For example, at least one (i.e., one or more than one) plate of anode 152a may be configured in a trough shape. For example, at least one (i.e., one or more than one) plate of the anode 152a may bound the anode compartment 161 on multiple (e.g., opposite) sides of the anode compartment 161 .

For example, the housing 152 may include a frame that holds the anode 152a (e.g., its at least one plate), the bearing device 154, and/or portions of the gas supply device 156 (e.g., its gas manifold).

In more general terms, only a portion of the housing 152 can be an anode 152a, or the entire housing 152 can be the anode 152a. For example, all of the walls of the housing 152 forming the anode compartment 161 can form the anode 152a.

The storage device 154 can be set up to hold a target (not shown, see 2 ) such that it extends at least partially into the anode space 161 . For example, the bearing assembly 154 may include two bearing components (eg, each including a pivot bearing) that are spaced apart by at least the cavity length 154d and/or define the anode compartment on opposite sides.

The gas supply device 156, e.g. The gas channel 156k can have or be formed from a tube, for example. The tube can, but does not necessarily have to, have an oval or polygonal cross-section. The gas duct 156k, e.g. Each of the gas outlets 156d can fluidly couple the channel interior 156h to the anode compartment 161 .

For example, the gas channel interior 156h can be at a greater distance from the housing opening 152o than from the cavity 161.

The gas supply device 156 can be set up, for example, in such a way that several gas supply groups with a binary distribution structure are set up along 103 .

The gas supply device 156 can be set up in such a way that gas which is supplied to the anode compartment 161 by means of the gas supply device 156 (also referred to as anode compartment supplying gas) exits from the anode compartment 161 (e.g. the housing opening 152o). For example, the direction 156r (also referred to as gas feed direction 156r) along which the gas is fed to the anode compartment 161 by means of the gas supply device 156 can essentially be the direction 101 (i.e. deviate from it by less than 20°).

For example, the gas supply direction 156r can be directed towards a wall of the housing 152 which delimits the anode space 161 . For example, the gas can flow into the anode space 161 from the side, be deflected there, and flow out of the anode space 161 or the housing opening 152o in the reference direction 105 .

For example, each of the gas outlets 156d may be directed toward the cavity 156h. In that case, a direction in which each of the gas-discharge through-holes penetrates the channel wall may be directed toward the anode space 161 and/or the gas-supplying direction may be 156r.

If the gas channel 156k is along the direction of the cavity length 154d (e.g. direction 103, cf. 2 ) segmented, this is also referred to as a trim gas channel. For example, a spatial distribution with which gas is supplied to the anode chamber 161 can be influenced (eg set and/or regulated) by means of the trim gas channel (also referred to as trimming). For example, the trim gas duct can have two or more (e.g. at least 3, at least 4, at least 5, at least 6, at least 7, at least 8, at least 9 or at least 10) gas duct segments or interior spaces 156h which are separated from one another and which run along the direction 103 ( also referred to as direction of extension 103) are arranged one behind the other. For example, each of the gas passage segments may include at least one (ie, one or more than one) gas outlet 156d.

The number of gas outlets 156d of the at least one gas outlet 156d can be, e.g. per gas duct segment, for example a maximum of 10 (e.g. a maximum of 5 or a maximum of 2).

Alternatively, in order to enable the trimming, the gas supply device 156 can be set up in such a way that several gas supply groups with a binary distribution structure are set up along 103 .

In the case of several gas distributors, the one that has the smaller number of segments in direction 103 is referred to as the main distributor or main gas channel. By means of the main gas duct, a minimum quantity of gas can be supplied, e.g. uniformly, to the anode chamber 161, for example. For example, the main gas channel can have at least 5 (or at least 10 or at least 20) gas outlets 156d, which are coupled to one another in a fluid-conducting manner by means of the channel interior 156h. For example, each gas outlet 156d of the main gas channel can have a nozzle which is introduced (e.g. screwed) into the channel wall of the main gas channel. The pressure drop across the gas outlet 156d can be increased by means of the nozzle, which enables a more homogeneous gas supply along direction 103.

In more general terms, the anode compartment 161 can be arranged between a wall of the housing 152 (also referred to as the housing wall), e.g. the anode 152a, and the gas channel 156k or the plurality of gas outlets 156d. For example, the gas channel 156k or the plurality of gas outlets 156d, the anode chamber 161 and the housing wall can be arranged one behind the other along the gas supply direction 156r.

Depending on the configuration of the gas duct 156k, reference is made below to a main gas duct or a trim gas duct as an example. It can be understood that the trim gas duct can be used as an alternative or in addition to the main gas duct, for which the description can apply by analogy, or that the main gas duct can be used as an alternative or in addition to the trim gas duct, for which the described can apply by analogy.

2A 15 illustrates a sputtering device 151 (eg a sputtering group) according to various embodiments 200 (eg set up according to embodiments 100) in a schematic plan view or cross-sectional view (eg looking from direction 105) and 2 B the sputtering device 151 in a schematic cross-sectional view (for example looking in direction 103), wherein the sputtering device 151 has a tubular target 302 mounted rotatably about an axis of rotation 302d. The axis of rotation 302d can, for example, be in the direction 103 (then also referred to as direction of the axis of rotation 103).

As can be seen, a gap 202 can be formed on both sides of the tubular target 302 between the tubular target 302 and the housing 152, through which the gas which is supplied to the anode compartment 161 by means of the gas supply device 156 exits from the anode compartment 161. In other words, the gas supplying the anode space can flow around the tubular target 302 .

The sputtering device 151 can be set up to atomize the tube target 302 by means of a plasma, to which the anode space-supplying gas emerging from the anode space 161 is fed, at least in direction 105 (then also referred to as emission direction 105).

As can be seen, the gas supply direction 156r (also referred to as the gas outlet direction) may be directed past the target 302 .

3A and 3B 300a and 300b each illustrate the sputtering device 151 (eg a sputtering group) according to various embodiments in a schematic side view or cross-sectional view (eg looking along the axis of rotation 302d).

The embodiments 300a can, for example, be set up according to the embodiments 100 or 200, with the gas supply device 156 alternatively or additionally having at least one gas duct 156k supplying the anode space or a plurality of gas outlets 156d supplying the anode space, which are arranged at a distance from the housing 152. This achieves a less complex construction. In that case, the housing 152 (eg the anode 152a) can have at least one opening 352o, eg one opening 352o per gas outlet 156d, which exposes the gas outlets 156d in the gas supply direction 156r with respect to the anode chamber 161.

The embodiments 300b can, for example, be set up according to the embodiments 100, 200 or 300a, the gas supply device 156 alternatively or additionally having at least one baffle plate 312 which is arranged in the anode chamber 161. The baffle plate 312 can be assigned a plurality of gas outlets 156d which supply the anode space and which are directed towards the baffle plate 312 . Alternatively or additionally, at least the gas supply direction 156r can be directed towards the baffle plate 312. This achieves a deflection of the gas in the anode space 161 and thus improves the gas mixing. The baffle plate 312 can be arranged, for example, between the housing opening 152o (or the tubular target 302) and the plurality of gas outlets 156d.

The plurality of gas outlets 156d can be provided by means of a gas channel 156k supplying the anode space and/or can be arranged below the anode space 161 . More generally speaking, the anode chamber 161 can be arranged between the housing opening 152o (or the tubular target 302) and the gas channel 156k or the plurality of gas outlets 156d. For example, the gas channel 156k or the plurality of gas outlets 156d, the anode space 161 and the housing opening 152o (or the tubular target 302) can be arranged one behind the other along the gas feed direction 156r. Alternatively or additionally, the gas supply direction 156r can be directed towards the housing opening 152o (or the tube target 302) and/or can be deflected by means of the baffle plate 312.

4 FIG. 12 illustrates a sputtering apparatus 151 according to various embodiments 400 (eg configured according to one or more of embodiments 100 to 300b) in a cross-sectional schematic perspective view configured in dual tube configuration. The dual tube configuration can meet a wider range of needs and/or can atomize more coating material per time.

In the double-tube configuration, the sputtering apparatus 151 may have two sputtering groups, each of which sputtering groups may be configured according to one or more of embodiments 100 to 300b, for example. For example, each of the sputtering groups can have a housing 152 with the anode space 161 and an anode 152a delimiting the anode space 161 . For example, the anode may be adjacent opening 152o.

Basically, only one or each of the two sputtering groups can optionally have one or more than one gas channel 156k supplying the anode compartment, as will be described in more detail later. For example, only one or each of the two sputtering groups can optionally have at least one anode space-supplying gas channel 156k, which is arranged on a side of the sputtering group opposite the other sputtering group (then also referred to as external gas channel 156k). The or each external gas duct 156k can be set up, for example, as a main gas duct or trim gas duct. For example, the gas supply device 156 can have two external gas channels 156k, of which each external gas channel 156k is arranged for supplying one of the two anode chambers 161 with gas. For example, the two anode spaces 161 can be arranged between two external gas channels 156k.

When ready for operation, only one or each of the two sputtering groups can optionally have a tube target 302, which extends into the anode chamber 161 of the sputtering group and/or is rotatably mounted.

Optionally, the double tube configuration can have that the gas supply device has at least one additional gas channel 402 (also referred to as central gas channel 402) or several additional gas outlets 402d, which is/are arranged between the two anode compartments 161. The at least one center gas port 402 may include one or more center gas ports 402, e.g., include one or more trim gas ports and/or one or more main gas ports.

The gas feed direction 456r of the at least one central gas duct 402 can essentially be in direction 105 (e.g. deviating therefrom by a maximum of 20°) or directed towards a transport path or a transport device (not shown). The transport device can be set up to transport a substrate past the sputtering device 151, e.g. in direction 101 (then also referred to as the transport direction) and/or along the transport path.

5 illustrates a sputtering device 151 according to various embodiments 500 (e.g. set up according to one or more than one of the embodiments 400) in a schematic sectional perspective view, wherein optionally only one or each of the two sputtering groups can have at least one gas channel 156k supplying the anode space, which is located on one of the other sputtering groups facing side of the sputtering group is arranged (also referred to as inner gas channel 156k), for example alternatively or in addition to the outer gas channel 156k. Each internal gas channel 156k can be arranged between the two anode compartments 161 and/or set up as a main gas channel or trim gas channel.

Optionally, the sputtering device 151 can have precisely one central gas channel 402 between the two anode chambers 161, which can be set up as a trim gas channel, for example.

6 151 illustrates a sputtering device 151 according to various embodiments 600 (e.g. set up according to one or more than one of the embodiments 100 to 500) in a schematic sectional perspective view (e.g. looking from direction 103), the two sputtering groups of which differ from one another, e.g. in the presence of at least one supplying the anode space Gas channel 156k and/or tubular target 302. Clearly, the double-tube configuration shown here is set up to operate only one tubular target 302. This can, for example, meet the requirement of atomizing less coating material.

7A and 7B 7 each illustrate the sputtering device 151 (eg a sputtering group) according to various embodiments 700a and 700b in a schematic side view or cross-sectional view (eg looking along the axis of rotation 302d).

The embodiments 700a can, for example, be set up according to one of the embodiments 100 to 600, wherein the gas supply device 156 has one or more than one pair of gas outlets 156d (also referred to as outlet pair), of which each outlet pair has exactly two gas outlets 156d. For example, the gas supply device 156 can have several (e.g. at least 5, at least 10 or at least 50) outlet pairs arranged one behind the other (also referred to as a row of outlet pairs) along the direction 103 . The arrangement of the gas outlets 156d as a pair of outlets improves the gas distribution in the cavity.

The two gas outlets of each pair of outlets may be directed away from each other, e.g., each toward a side wall of housing 152, e.g., anode 152a. The two gas outlets of each pair of outlets can be coupled to one another in a gas-conducting manner by means of the gas channel interior 156h. Several (e.g. at least 5, at least 10 or at least 50) pairs of outlets, e.g. a row of pairs of outlets, of the gas supply device 156 can be coupled to one another in a gas-conducting manner, for example by means of the gas channel interior 156h.

For example, the gas channel 156k supplying the anode space can extend into the cavity 161 or be arranged therein.

Clearly, each pair of outlets can provide two gas feed directions 156r, along which the gas flows into the cavity 151. Each gas supply direction 156r of the pair of outlets may be directed to a wall of the housing 152, e.g., a side wall of the housing 152. This achieves that the gas is deflected and better mixed by means of the wall of the housing 152 . This is done through the pair of outlets on either side of the target 302.

In various embodiments, the gas duct 156k can be set up as a main gas duct and/or as a trim gas duct, as described below.

The embodiments 700b can, for example, be set up according to the embodiments 700a, with the gas channel interior 156h having a plurality of gas lines 756, 752, 754 (also referred to as first gas line 756, second gas line 754 and third gas line 752). The gas supply device 156 can, for example, have a first gas line 756 per outlet pair, e.g. For example, the first gas line 756 can penetrate the gas channel 156k along direction 101 .

The first gas line 756 can clearly act as a distributor level, which distributes the gas evenly to the two gas outlets 156d of the outlet pair.

The gas supply device 156 can have, for example, if it is set up as a main gas duct, for example, a second gas line 754 (e.g. a main gas duct) which connects several (e.g. at least 5, at least 10 or at least 50) pairs of outlets, e.g couples. For example, the second gas line 754 can have several (eg at least 5, at least 10 or at least 50) first gas lines 756 gas conductively connect to each other. Optionally, the gas supply device 156 can have a nozzle (not shown) for each first gas line 756 , which nozzle couples the first gas line 756 to the second gas line 754 . The nozzle causes a pressure drop and thus improves the gas supply.

The gas supply device 156 can have a binary distribution structure, for example, if it is set up as a trim gas duct, for example. The binary distribution structure can have a third gas line 752 per two immediately adjacent pairs of outlets (e.g. exactly) which couples the two pairs of outlets directly adjacent to one another in a gas-conducting manner, for example by means of that first gas line 765 which couples the pair of outlets to one another. In this case, the first gas lines 756 provide the output-side first branching level of the binary distribution structure, and the third gas line 752 provides a second branching level of the binary distribution structure that is subordinate to the first branching level. Optionally, the binary distribution structure can have a third branching level, which has one or more than one fourth gas line (not shown), of which every fourth gas line (e.g. precisely) couples two third gas lines to one another in a gas-conducting manner.

In an exemplary implementation, the or each gas duct 156k may, for example, have a plurality (e.g. at least 5, at least 10 or at least 50) gas duct segments, each gas duct segment having a fourth gas duct (not shown) which connects two third gas ducts of the gas duct segment to one another and to a gas connection of the gas duct segment, of which each third gas line 752 couples two first gas lines 756 of the gas duct segment to one another, of which each first gas line 756 couples two gas outlets of an outlet pair of the gas duct segment to one another.

Optionally, in the exemplary implementation, the or each gas passage 156k may include the second gas conduit 754 coupling the first gas conduits 756 of each of the gas conduit segments together (e.g., via the nozzle).

In an additional exemplary implementation, the or each gas passage 156k may include an outlet pair row and a second gas conduit 754, the outlet pair row including a plurality (e.g., at least 5, at least 10, or at least 50) outlet pairs coupled together by the second gas conduit 754 (e.g., per pair of outlets by means of the nozzle) .

8th FIG. 8 illustrates a sputtering apparatus 151 according to various embodiments 800 (eg, configured according to embodiments 700a or 700b) in a perspective sectional schematic view configured in dual tube configuration.

9 illustrates a coating arrangement 751 according to various embodiments 900 in a schematic cross-sectional view (e.g. looking along the axis of rotation 302d), in which the spatial distribution of the pressure of the gas supplying the anode space (e.g. its partial pressure) or its pressure gradient is shown, with the pressure along the paths 701 drops. As can be seen, the pressure of the anode compartment supplying gas in the anode compartment 161 may decrease towards the case opening 152o.

The coating arrangement 751 can have the sputtering device 151 configured according to one or more than one of the embodiments 100 to 600. The coating arrangement 751 can also have a vacuum chamber 802 in which the sputtering device 151 is arranged.

The coating arrangement 751 can optionally have a pump system 804 (comprising at least one rough vacuum pump and optionally at least one high vacuum pump) which is coupled to the vacuum chamber 802 in a fluid-conducting manner. The pump system 804 can be set up to withdraw gas from the vacuum chamber 802 so that a vacuum (ie a pressure of less than 0.3 bar) and/or a pressure in a range from approximately 1 mbar to approximately 10 ^-3 mbar ( in other words fine vacuum) and/or a pressure in a range from about 10 ^-3 mbar to about 10 ^-7 mbar (in other words high vacuum) or a pressure of less than high vacuum, e.g. less than about 10 ^-7 mbar (with other Words ultra high vacuum) can be or can be provided.

The coating arrangement 751 can optionally have a gas source (not shown), eg for each gas composition to be supplied, which has the gas supplying the anode space and/or is fluidly coupled to the gas supply device 156, eg its gas connection. The gas supply device 156 can be set up to extract the gas from the or each gas source and to supply it to the anode space 161 . The gas supplying the anode space can, for example, comprise or be formed from an inert gas. Alternatively or additionally, the gas supplying the anode space can include or be formed from a reactive gas, for example including molecular oxygen (O ₂ ), molecular nitrogen (N ₂ ) and/or molecular hydrogen as reactive gas.

The coating arrangement 751 can optionally have a transport device 702 which is set up to transport one or more than one substrate past the sputtering device 151, e.g. along a transport path through a coating area which adjoins the sputtering device 151, e.g. its housing 152. The pressure in the coating area may arise from an equilibrium of gas exiting the anode compartment 161 and being extracted by the pump system 804 .

Various more concrete exemplary implementations are described below, which relate to what has been described above and is illustrated in the figures.

Alternatively or in addition to the central gas supply between the cathode tubes in the direction of the substrate, a gas distributor supplying the anode space can be provided for each cathode tube, which lets in the process gas (e.g. Ar, O ₂ , and/or N ₂ ) into the anode space behind the cathode tubes .

• - zwischen den Kathodenrohren angeordnet ist,
• - vom Substrat aus gesehen auf der Ebene hinter den Kathodenrohren angeordnet ist,
• - zwischen den Anoden angeordnet ist,
• - das Prozessgas innerhalb des durch die Anode geformten Raums entlässt,
• - das Prozessgas nicht direkt in Richtung der Kathode (Target) entlässt,
• - das Prozessgas horizontal (oder winklig) zunächst auf die gegenüberliegende Anodenfläche entlässt, um dieses dort umzulenken und entsprechend der Längsachse der Kathode zu homogenisieren,
• - in Richtung der Längsachse der Kathode optional segmentiert sein kann,
• - über eine Binärverteilungsstruktur zur Aufteilung des Gasflusses auf die verschiedenen Segmente verfügen kann,
• - das Prozessgas über optionale Düsen in den Anodenraum hinter der Kathode entlässt.

A gas distributor supplying the anode space (cf. 5 ) be provided, which one

• - is arranged between the cathode tubes,
• - is arranged on the plane behind the cathode tubes, seen from the substrate,
• - placed between the anodes,
• - releases the process gas within the space formed by the anode,
• - the process gas does not discharge directly in the direction of the cathode (target),
• - first releases the process gas horizontally (or at an angle) onto the opposite anode surface in order to deflect it there and homogenize it in accordance with the longitudinal axis of the cathode,
• - can optionally be segmented in the direction of the longitudinal axis of the cathode,
• - can have a binary distribution structure for dividing the gas flow between the different segments,
• - the process gas is released into the anode space behind the cathode via optional nozzles.

The gas distributor supplying the anode space can, for example, be set up as a combination distributor, i.e. have at least one main gas channel and at least one trim gas channel. The main gas channel can have nozzles, for example. The trim gas channel can have a binary distribution structure, for example.

Each gas distributor supplying the anode compartment can be combined with a central gas distributor (also referred to as a center distributor) in the middle between the cathode tubes towards the substrate. The gas distributor supplying the anode space can have, for example, the main gas channel with nozzles. For example, the center manifold may include a trim gas channel and a binary manifold structure.

It is also possible for only a single gas distributor supplying the anode space to be installed for the operation of a single cathode tube (cf. 6 ).

Each gas distributor supplying the anode space can also be arranged directly in the cutting plane substrate-cathode-anode behind the anode under the cathode tube (cf. 3B) . This also applies to the case in which the magnetron is only designed for the operation of a single cathode tube in the geometric center.

• - zwei Rohrtargets können in gewissen Grenzen unabhängig voneinander gasgetrimmt werden, um einseitig lokale Inhomogenitäten (z.B. infolge von einseitig angebrachten Pumpen) auszugleichen. Dies ist mit einem mittigen Gasauslass allein erschwert oder gar nicht möglich.
• - Bei geeigneter konstruktiver Anodenausführung erfolgt die Gasströmung vom Gasauslass homogen entlang des gesamten Kathodenrohres, bis das Gas die Pumpen erreicht (vgl. 7).
• - Dadurch wird eine bessere Gasausnutzung realisiert als bei nur mittigem in Richtung zum Substrat hin gerichtetem Gasauslass.
• - Dadurch wird eine bessere Trimbarkeit der Kathode erreicht, beispielsweise kann das Magnetron deutlich effektiver und direkter mittels lokaler Gasflussänderungen bzgl. seiner Schichtdickenverteilung eingestellt werden. Dies gilt auch für den Einzelrohrbetrieb.
• - Durch die Platzierung der Gasverteiler hinter den Anoden und zwischen den Kathodenrohren wird zudem der Beschuss des Verteilers mit Elektronen und dessen parasitäre Beschichtung verringert.

The sputtering apparatus provided herein provides one or more of the following:

• - Within certain limits, two tube targets can be gas trimmed independently of one another in order to compensate for local inhomogeneities on one side (eg as a result of pumps attached on one side). This is difficult or not possible with a central gas outlet alone.
• - If the anode design is suitable, the gas flow from the gas outlet is homogeneous along the entire cathode tube until the gas reaches the pumps (cf. 7 ).
• - As a result, better gas utilization is realized than with a gas outlet that is only directed in the middle in the direction of the substrate.
• - This achieves better trimmability of the cathode, for example the magnetron can be adjusted much more effectively and directly by means of local gas flow changes with regard to its layer thickness distribution. This also applies to single pipe operation.
• - The placement of the gas distributors behind the anodes and between the cathode tubes also reduces the bombardment of the distributor with electrons and its parasitic coating.

Various examples are described below, which relate to those described above and shown in the figures.

Example 1 is a sputtering apparatus comprising: a (eg, substantially box-shaped) A housing having a cavity (eg, substantially cuboid) and an anode, wherein the anode delimits the cavity (eg, on two or more sides of the cavity); a bearing device for holding a target (e.g. providing a cathode associated with the anode) in such a way that it is at least partially extended into the cavity (so that a gap is formed, for example, between the housing or the anode and the target on both sides of the target); a gas supply device which has at least one (ie one or more than one) gas outlet for supplying the cavity with gas, wherein the one or more than one gas outlet preferably has a plurality of gas outlets, wherein the plurality of gas outlets are preferably arranged one behind the other along a direction of extension, the Cavity along the direction of extension preferably has a greater extent than transverse to the direction of extension.

Example 2 is the sputtering device according to Example 1, wherein the bearing device is set up to provide the target with an axis of rotation or to support it in a rotatable manner.

Example 3 is the sputtering device according to example 1 or 2, wherein the bearing device has at least one pivot bearing for rotatably mounting the target or for providing the axis of rotation.

Example 4 is the sputtering apparatus according to any one of Examples 1 to 3, wherein the housing has an opening exposing (and/or defining) the cavity; and preferably wherein the anode defines the cavity at least on a side of the cavity opposite the opening; and/or wherein preferably the opening has an extent along a direction that is greater than an extent (e.g., diameter) of the target (for example) along the direction.

Example 5 is the sputtering apparatus according to any one of Examples 1 to 4, further comprising: a baffle plate disposed in the cavity (e.g. at a distance from the anode), at least one (e.g. each) gas outlet of the one or more gas outlets is aimed at the flapper (e.g. through a wall of the housing).

Example 6 is the sputtering device according to one of Examples 1 to 5, the bearing device having a magnet system, the magnet system being arranged outside the cavity, for example, or at least being set up to form a plasma outside the cavity, the cavity being, for example (e.g. directly) between the Magnet system and the anode is arranged.

Example 7 is the sputtering apparatus according to any one of Examples 1 to 6, wherein at least one (e.g. each) gas outlet of the one or more than one gas outlets is directed and/or faces the cavity.

Example 8 is the sputtering apparatus according to any one of Examples 1 to 7, wherein the one or more gas outlets open into the cavity; or wherein the housing has one or more through openings that fluidly couple the one or more gas outlets to the cavity.

Example 9 is the sputtering device according to any one of Examples 1 to 8, further comprising: the target, wherein the target is preferably tubular and/or rotatably supported by the bearing device; the magnet system being arranged in the tubular target, for example.

Example 10 is the sputtering device according to any one of Examples 1 to 9, wherein the gas supply device (e.g. each gas outlet thereof) supplies the cavity with gas in a gas supply direction (e.g. into the cavity) which is on a wall (e.g. side wall) of the housing (which e.g. bounds the anode space or is part of the anode) and/or directed towards a baffle in the cavity (e.g. through a wall of the housing), e.g. directed through a wall of the housing.

Example 11 is the sputtering device according to any one of Examples 1 to 10, wherein each gas outlet of the gas supply device has a through opening which penetrates a wall of the gas supply device (e.g. its gas channel) along a gas supply direction which leads to a wall of the housing (which, for example, delimits the anode compartment or Is part of the anode) and/or is directed towards a baffle plate.

Example 12 is the sputtering device according to one of Examples 1 to 11, wherein the gas supply device is set up to supply the gas to the cavity, preferably in a gas supply direction which is, for example, on a wall (e.g. a side wall) of the housing (which, for example, delimits the anode space or part the anode) and/or directed towards a baffle plate in the cavity.

Example 13 is the sputtering device according to any one of examples 1 to 12, wherein the anode has an electrical connection and/or (e.g whose electrical connection) is coupled to a power supply, the power supply preferably also being coupled to the storage device and/or the target.

Example 14 is the sputtering apparatus according to any one of Examples 1 to 13, wherein the cavity extends from a first direction (e.g., emission direction) into the housing, preferably toward or into the anode, with, for example, a distance of the housing from the Target decreases in the direction; wherein the gas feed direction is preferably oblique or transverse to the first direction.

Example 15 is the sputtering apparatus according to Example 14, wherein at least one (e.g. each) gas outlet of the one or more gas outlets is penetrated by a through hole along a second direction, the second direction being oblique or transverse to the first direction.

Example 16 is the sputtering apparatus according to any one of Examples 1 to 15, further comprising: a baffle plate disposed in the cavity toward which the one or more gas outlets are directed and/or to which the one or more gas outlets faces.

Example 17 is the sputtering device according to any one of Examples 1 to 16, wherein the gas supply device has a gas channel, at least one (e.g. each) gas outlet of the one or more than one gas outlets opens into an inner space of the gas channel; and/or wherein the interior fluidly couples a plurality of gas outlets to one another; and/or wherein the interior space fluidly couples each gas outlet of the one or more than one gas outlet to a gas port of the gas supply device.

Example 18 is the sputtering apparatus according to any one of Examples 1 to 17, wherein at least one (e.g. each) gas outlet of the one or more gas outlets has a nozzle.

Example 19 is the sputtering apparatus according to any one of Examples 1 to 18, wherein the one or more gas outlets have multiple, e.g., more than 5 (e.g., than 10) gas outlets

Example 20 is the sputtering device according to any one of Examples 1 to 19, wherein the gas supply device has one or more additional gas outlets directed past the housing.

Example 21 is the sputtering device according to one of Examples 1 to 20, wherein the gas supply device (e.g. its gas channel) has a (e.g. hollow) first segment and a separate (e.g. hollow) second segment, the first segment having a first gas outlet of one or has more than one gas outlet, wherein the second segment has a second gas outlet of the one or more than one gas outlet.

Example 22 is the sputtering apparatus according to Example 21, wherein the gas supply apparatus includes a first gas port fluidly coupled to the first gas outlet and a second gas port fluidly coupled to the second gas outlet.

Example 23 is the sputtering device according to any one of Examples 1 to 22, wherein the housing has two side walls (e.g. extending parallel to one another or at least extending towards the same side) (of which, for example, a side wall is a wall on which the at least one gas outlet is directed ), between which the cavity, the at least one gas outlet and/or the baffle plate are arranged.

Example 24 is the sputtering apparatus according to any one of Examples 1 to 23, wherein the housing (e.g. its anode) has a (e.g. plate-shaped) first portion and a (e.g. plate-shaped) second portion which are arranged on opposite sides of the cavity, wherein, for example the one or more gas outlet faces the second section and/or is at a smaller distance from the first section than from the second section.

Example 25 is the sputtering apparatus according to any one of Examples 1 to 24, further comprising: an additional housing (preferably spaced from the housing) having an additional cavity (preferably spaced from the cavity) and an additional anode, wherein the additional anode bounding the additional cavity and/or wherein the cavity and the additional cavity are spaced apart by a distance that is less than an extent (e.g., cavity length and/or cavity width) of the cavity; preferably wherein the one or more than one gas outlet is: located between the cavity and the additional cavity, or located on a first side of the cavity facing the additional cavity, or located on a second side of the cavity facing the additional Opposite cavity, preferably a distance of the cavity from the additional cavity is smaller than an extension of the cavity (e.g. along an axis of rotation of the target).

Example 26 is the sputtering device according to example 25, wherein the gas supply device has one or more than one additional gas outlet for supplying the additional cavity with gas, wherein preferably the one or more than one additional gas outlet: is arranged between the cavity and the additional cavity or is arranged on a first side of the additional cavity, which faces the cavity, or is arranged on a second side of the additional cavity, which faces the cavity.

Example 27 is the sputtering apparatus according to Example 25 or 26, further comprising: an additional support device for holding an additional target such that the additional target is at least partially extended into the additional cavity.

Example 28 is the sputtering device according to example 27, wherein the additional bearing device is set up to provide the additional target with an axis of rotation or to mount it rotatably, and/or wherein the bearing device has at least one pivot bearing for rotatably mounting the target or for providing the axis of rotation .

Example 29 is the sputtering apparatus according to any of Examples 1 to 28, wherein the at least one gas outlet has two gas outlets (also referred to as a pair or pair of outlets), which are directed away from one another, for example, and/or are coupled to one another in a gas-conducting manner, for example; and/or of which, for example, each gas outlet is directed towards a wall of the housing.

Example 30 is the sputtering device according to any one of Examples 1 to 29, wherein the at least one gas outlet has one or more than one (e.g. more than 10 or more than 20) pair of gas outlets (also referred to as outlet pair), each pair having two gas outlets, which are, for example, directed away from each other and/or coupled to one another in a gas-conducting manner (e.g. by means of the gas channel); and/or each gas outlet of which is directed towards a wall of the housing; and/or several pairs of which are arranged one behind the other (e.g. along the axis of rotation of the target).

Example 31 is the sputtering device according to Example 30, wherein the gas supply device has a gas line per pair, which gas-conductively couples the two gas outlets of the pair that are directed away from each other, for example, the gas line is extended along a direction that is transverse to an axis of rotation of the target, e.g. through the gas channel.

Example 32 is the sputtering device according to one of Examples 30 or 31, wherein the gas supply device has one or more than one gas line per group of two or more pairs, which gas-conductively couples the pairs (e.g. their gas outlets) of the group, with, for example, three gas lines of more than one gas line flow into each other.

Example 33 is the sputtering device according to Example 32, wherein the gas supply device has a nozzle per pair which gas-conductively couples, for example, the one or more than one gas pipe to the pair; and/or which, for example, couples the two gas lines of more than one gas line to one another in a gas-conducting manner.

Example 34 is the sputtering device according to one of Examples 32 or 33, wherein the one or more gas lines has a fourth gas line which gas-conductively couples two third gas lines of the one or more than one gas lines to one another and to a gas port of the gas channel segment, each of which third gas line couples two pairs in a gas-conducting manner.

Example 35 is the sputtering apparatus according to any one of Examples 1 to 34, wherein the at least one gas outlet is disposed in or at least adjacent to the cavity.

Example 36 a coating arrangement, comprising: a sputtering device according to any one of Examples 1 to 35, and a transport device (e.g. having one or more than one roller) for transporting a substrate along a transport path, the bearing device being set up to hold the target between the housing and the transport path, an optional pump, wherein the sputtering device is preferably arranged between the transport device or the transport path and the pump.

Example 37 is the coating arrangement according to example 36, further comprising: a vacuum chamber (e.g. coupled to the pump) in which the sputtering device and/or the transport path are arranged.

Claims (13)

Sputtering apparatus (151) comprising: • a housing (152) having a cavity (161) and an anode (152a), the anode (152a) defining the cavity (161); • a bearing device (154) for holding a target (302) such that it is at least partially extended into the cavity (161); • a gas supply device (156) which supplies at least one gas outlet (156d). of the cavity (161) with gas; • wherein the at least one gas outlet (156d) preferably has a plurality of gas outlets (156d); • a baffle plate (312), which is arranged in the cavity (161), • wherein the at least one gas outlet (156d) is directed towards the baffle plate (312). Sputtering apparatus (151) comprising: • a housing (152) having a cavity (161) and an anode (152a), the anode (152a) defining the cavity (161); • a bearing device (154) for holding a target (302) such that it is at least partially extended into the cavity (161); • a gas supply device (156) which has at least one gas outlet (156d) for supplying the cavity (161) with gas; • wherein the at least one gas outlet (156d) is directed towards a wall of the housing (152) which delimits the cavity (161); • wherein the at least one gas outlet (156d) preferably has a plurality of gas outlets (156d). Sputtering device (151) according to claim 1 or 2 , wherein the at least one gas outlet (156d) has two gas outlets which are directed away from each other. Sputtering device (151) according to any one of Claims 1 until 3 , wherein the at least one gas outlet (156d) is arranged in the cavity (161). Sputtering device (151) according to any one of Claims 1 until 4 , wherein the housing has two side walls, preferably extending parallel to one another, between which the cavity and/or the at least one gas outlet (156d) is arranged. Sputtering device (151) according to any one of Claims 1 until 5 further comprising: • the target (302) partially extending into the cavity (161); • wherein the target (302) is preferably tubular and/or is rotatably mounted by means of the bearing device (154). Sputtering device (151) according to any one of Claims 1 until 6 wherein the cavity (161) extends from a first direction into the housing (152), preferably toward or into the anode (152a). Sputtering device (151) according to claim 7 , wherein a gas outlet of the at least one gas outlet (156d) is penetrated along a second direction by a through opening, wherein the second direction is oblique or transverse to the first direction. Sputtering device (151) according to any one of Claims 1 until 8th • wherein the gas supply device (156) has a gas channel (156k), • wherein each gas outlet (156d) of the at least one gas outlet (156d) opens into an interior of the gas channel (156k). Sputtering device (151) according to claim 9 , wherein the gas channel (156k) is arranged in the cavity (161) or at least extends into it. Sputtering device (151) according to any one of claims 9 or 10 , wherein the gas channel (156k) has a hollow first segment and a hollow second segment separated therefrom, the first segment having a first gas outlet of the at least one gas outlet, the second segment having a second gas outlet of the at least one gas outlet. Sputtering device (151) according to any one of Claims 1 until 11 wherein the gas supply device comprises one or more additional gas outlets (402d) directed past the housing (152). Sputtering device (151) according to any one of Claims 1 until 12 , further comprising: • an additional housing (152) having an additional cavity (161) and an additional anode (152a), the additional anode (152a) delimiting the additional cavity (161) • the cavity (161) and the additional cavity (161) are spaced apart by a distance less than an extent of the cavity (161); • wherein preferably the at least one gas outlet (156d) is arranged on a side of the cavity (161) that faces or faces away from the additional cavity (161).

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