DE102020102854A1 - Particle beam device - Google Patents

Abstract

The invention relates to a particle beam device which has a particle beam generator for generating a particle beam with charged particles, an optical axis (OA), a deflection unit for generating an electric field and for deflecting the particle beam, the deflection unit having a first number of deflection electrodes (AE11 to AE1n) , wherein the deflection electrodes (AE11 to AE1n) each have a first geometric arrangement with respect to one another and with regard to the optical axis (OA) and wherein each of the deflection electrodes (AE11 to AE1n) occupies a position (PAE11 to PAE1n) assigned to it in the first geometric arrangement, a supply unit for Supplying the deflection electrodes (AE11bis AE1n) with voltage, and a supply cable, the supply cable connecting the supply unit to the deflection electrodes (AE11bis AE1n), the supply cable having a second number of conductors and a longitudinal axis, the conductors in each case towards one another and towards one another visibly have a second geometric arrangement along the longitudinal axis and each of the conductors assumes a position assigned to it in the second geometric arrangement, the first geometric arrangement of the deflection electrodes (AE11 to AE1n) corresponding to the second geometric arrangement of the conductors, and the assigned position in the first geometric arrangement corresponds to the assigned position of the second geometric arrangement.

Description

The invention relates to a particle beam device for imaging, processing and / or analyzing an object. For example, the particle beam device is an electron beam device and / or an ion beam device.

Electron beam devices, in particular a scanning electron microscope (hereinafter also called SEM) and / or a transmission electron microscope (hereinafter also called TEM), are used to examine objects (also called samples) in order to gain knowledge of the properties and behavior of the objects under certain conditions.

In an SEM, an electron beam (hereinafter also referred to as the primary electron beam) is generated by means of a beam generator and focused on an object to be examined by a beam guidance system. An objective lens is used for focusing. By means of a deflection device, the primary electron beam is guided over a surface of the object to be examined in the form of a grid. The electrons of the primary electron beam interact with the object to be examined. In particular, interaction particles and / or interaction radiation arise as a consequence of the interaction. The interaction particles are, for example, electrons. In particular, electrons are emitted by the object - so-called secondary electrons - and electrons from the primary electron beam are backscattered - so-called backscatter electrons. The interaction particles form the so-called secondary beam and are detected by at least one particle detector. The particle detector generates detection signals which are used to generate an image of the object. An image of the object to be examined is thus obtained.

The interaction radiation is, for example, X-rays or cathodoluminescent light. It is detected, for example, with a radiation detector and is used in particular to examine the material composition of the object.

In the case of a TEM, a primary electron beam is also generated by means of a beam generator and focused on an object to be examined by means of a beam guidance system. The primary electron beam shines through the object to be examined. When the primary electron beam passes through the object to be examined, the electrons of the primary electron beam interact with the material of the object to be examined. The electrons passing through the object to be examined are imaged by a system that includes an objective onto a fluorescent screen or onto a detector - for example in the form of a camera. The aforementioned system also includes, for example, a projection lens. The mapping can also take place in the scan mode of a TEM. Such a TEM is usually referred to as a STEM. In addition, provision can be made to detect electrons backscattered on the object to be examined and / or secondary electrons emitted by the object to be examined by means of a further detector in order to image an object to be examined.

It is known to integrate the function of a STEM and a SEM in a single particle beam device. With this particle beam device, it is thus possible to examine objects with an SEM function and / or with a STEM function.

It is also known from the prior art to analyze and / or process an object in a particle beam device on the one hand with electrons and on the other hand with ions. For example, an electron beam column, which has the function of an SEM, is arranged on the particle beam device. In addition, an ion beam column is arranged on the particle beam device. An ion beam generator arranged in the ion beam column is used to generate ions which are used for processing and / or imaging an object. For processing and / or imaging, the ion beam is guided with a deflection device in the form of a grid over a surface of the object to be examined. For example, material from the object is removed during processing or a material is applied to the object. Additionally or alternatively, the ions are used for imaging. The electron beam column with the SEM function is used in particular for further examination of the processed or unprocessed object, but also for processing the object.

In order to scan a particle beam of a particle beam device, for example in the form of a primary electron beam or an ion beam, over a surface of an object, it is known to use a deflection unit for scanning which provides an electric field which is as homogeneous as possible for deflecting the particle beam. In order to avoid later imaging errors, it is advantageous if the particle beam deflected with the deflection unit passes through the optical center of an objective lens after it has been deflected by the deflection unit, the particle beam being focused on the surface of the object with the objective lens. It is known that the position of the optical center depends on which aberration one wants to improve. It is also advantageous if the particle beam in the deflection unit is as close as possible to an optical axis of the particle beam device runs. This is achieved, for example, in that a deflection unit in the form of a double deflection system is arranged in the particle beam device between the beam generator and the objective lens, which has a first deflection device and a second deflection device, the second deflection device being arranged as close as possible to the optical center of the objective lens and wherein the first deflector is arranged further from the optical center of the objective lens.

As mentioned above, it is known to use a deflection unit for scanning the particle beam over the object, which deflection unit provides an electrical field which is as homogeneous as possible for deflecting the particle beam. In particular, it is known to generate a homogeneous electric field, for example by using plate capacitors. A plate capacitor is used in each case for one deflection direction, for example in the x direction or in the y direction. In other words, a first plate capacitor is used, for example, for a deflection in the x direction and a second plate capacitor for a deflection in the y direction. In this case, the first plate capacitor and then the second plate capacitor are arranged in the particle beam device from the beam generator in the direction of the objective lens. In such a configuration, the first plate capacitor is arranged further away from the optical center of the objective lens than the second plate capacitor. It has been shown, however, that with such an arrangement, errors can arise in the imaging of the object with the particle beam.

It is also known to generate a homogeneous electric field by means of a multipole, the multipole having a predetermined number of multipole electrodes. For example, the multipole has eight multipole electrodes, namely a first multipole electrode ME1 , a second multipole electrode ME2 , a third multipole electrode ME3 , a fourth multipole electrode ME4 , a fifth multipole electrode ME5 , a sixth multipole electrode ME6 , a seventh multipole electrode ME7 and an eighth multipole electrode ME8 (see. 1 ). The first multipole electrode ME1 becomes a first deflection voltage U ₁ , fed. The second multipole electrode ME2 becomes a second deflection voltage U ₂ fed. The third multipole electrode ME3 becomes a third deflection voltage U ₃ fed. The fourth multipole electrode ME4 becomes a fourth deflection voltage U ₄ fed. The fifth multipole electrode ME5 becomes a fifth deflection voltage U ₅ fed. The sixth multipole electrode ME6 becomes a sixth deflection voltage U ₆ fed. The seventh multipole electrode ME7 becomes a seventh deflection voltage U ₇ fed. The eighth multipole electrode ME8 becomes an eighth deflection voltage U ₈ fed. To generate a pure dipole field, the following relationship applies to a multipole with eight multipole electrodes: $${\text{U}}_{\text{i}}=-\text{U}\cdot \text{cos}\left(\left(\text{i}-1\right)\cdot 45°+\mathrm{\phi }\right)\text{with i}=\mathrm{1,}\mathrm{2,}...\mathrm{8th}$$

The multipole can be arranged very close to the optical center of the objective lens. For example, an edge of the multipole can be arranged at a distance from an electrostatic objective lens which corresponds to a bore radius of the electrostatic objective lens. When using a magnetic objective lens, the multipole can basically be arranged at any desired location along the optical axis of the particle beam device.

For an electric field in the direction φ which is as homogeneous as possible, where φ corresponds to the azimuthal orientation of the deflection of the particle beam with respect to the optical axis of the particle beam, the in 1 multipole shown is used. For example, for φ = 0 the following voltage assignment results: U ₁ = -100 V, U ₂ = U ₈ = -71 V, U ₃ = U ₇ = 0 V, U ₄ = U ₆ = 71 V and U ₅ = 100 V. Neighboring multipole electrodes have a small potential difference to one another. A first multipole electrode and a second multipole electrode are adjacent multipole electrodes, for example, when a center of a first center of gravity of the first multipole electrode and a second center of gravity of the second multipole electrode are at a greater distance from centers of gravity of all other multipole electrodes than the distance from the first center of gravity to the center.

If the particle beam is to be scanned over the surface of the object at a high frequency, then supply units which provide the deflection voltages lead high amounts of charge into the multipole electrodes of the multipole. Depending on the output power of the supply units, there is an upper limit for a transferable bandwidth of a raster signal. Furthermore, the above-mentioned supply units are very often not arranged directly on a particle beam column of the particle beam device. Rather, the supply units are arranged at some distance from the particle beam column, for example up to 5 m or up to 10 m. Supply cables are used to connect the supply units to the multipole electrodes of the multipole. In the known prior art, the multipole electrodes have a capacitance, for example on the order of 20 pF. The supply cables of the prior art have a capacitance in the form of a capacitance per unit length, for example on the order of 100 pF per meter of line length. Since the distance between the supply units and the particle beam column in the prior art is a few Meters (for example in the range from 5 m to 10 m), the supply cables have a cable length of 5 m to 10 m, so that the capacitance of the supply cables dominates in comparison to the capacitance of the multipole electrodes.

In order not to restrict the transmittable bandwidth of the raster signal too much, it is desirable to make the difference between the capacitance per unit length of the supply cables and the capacitance of the multipole electrodes as small as possible so that the capacitive load on the supply units is as low as possible.

The invention is therefore based on the object of specifying a particle beam device with a deflection unit for deflecting a particle beam, in which the difference between the capacitance per unit length of the supply cables and the capacitance of the deflection unit is small.

This object is achieved with a particle beam device according to the invention having the features of claim 1. Further features of the invention emerge from the following description, the attached claims and / or the attached drawings.

The particle beam device according to the invention is designed, for example, as an electron beam device and / or as an ion beam device. The particle beam device according to the invention is used in particular for imaging, processing and / or analyzing an object. The particle beam device according to the invention has at least one beam generator for generating a particle beam with charged particles in the form of primary particles. For example, the primary particles are electrons or ions. Furthermore, the particle beam device according to the invention has at least one objective lens for focusing the particle beam on the object, with interaction particles and / or interaction radiation being produced when the particle beam interacts with the object. The interaction particles are, for example, secondary particles, in particular secondary electrons, and / or backscattered particles, for example backscattered electrons. The interaction radiation is, for example, X-rays or cathodoluminescent light. In addition, the particle beam device according to the invention has at least one detector for detecting the interaction particles and / or interaction radiation.

The particle beam device according to the invention has at least one optical axis along which, in particular, the particle beam of the particle beam device can be guided. In addition, the particle beam device according to the invention has at least one deflection unit for generating at least one electric field and for deflecting the particle beam. The deflection unit has a first number of deflection electrodes AE1 ₁ to AE1 _n , where n is an integer greater than or equal to 4. The first number of deflection electrodes AE1 ₁ up to AE1 _n can be selected as required depending on the aforementioned condition. For example, the first is a number of deflection electrodes AE1 ₁ up to AE1 _{n is} an even number. In one embodiment of the particle beam device according to the invention, the first number of deflection electrodes is AE1 ₁ to AE1 _n and thus the number n 4, 6, 8, 10 or 12. It is expressly pointed out that the first number of deflection electrodes AE1 ₁ to AE1 _{n is} not limited to the aforementioned embodiments. Rather, each first is a number of deflection electrodes AE1 ₁ to AE1 _n which is suitable for the invention can be used.

The deflection electrodes AE1 ₁ to AE1 _n each have a first geometric arrangement with respect to one another and with regard to the optical axis. In other words, they are deflection electrodes AE1 ₁ to AE1 _n are arranged in relation to one another and with regard to the optical axis in such a way that the deflection electrodes AE1 ₁ to AE1 _n occupy the first geometric arrangement. In other words, the deflection electrodes AE1 ₁ to AE1 _{n have} a predeterminable distance and a predeterminable angular alignment to one another. Furthermore, the deflection electrodes AE1, to AE1 _{n have} a predeterminable distance and a predeterminable angular alignment with respect to the optical axis of the particle beam device. It is also provided that each of the deflection electrodes AE1 ₁ to AE1 _n a position assigned to it PAE1 ₁ until PAE1 assumes _n in the first geometric arrangement. For example, the first is a number of deflection electrodes AE1 ₁ to AE1 _n arranged along a circle, the center of which is arranged on the optical axis of the particle beam device. In one embodiment of the particle beam device according to the invention, the first geometric arrangement is an n-fold rotationally symmetrical arrangement, the optical axis of the particle beam device according to the invention being a first axis of symmetry.

The particle beam device according to the invention also has at least one supply unit for supplying the deflection electrodes AE1 ₁ up to AE1 _n with voltage and, depending on this, also with current. For example, the supply unit is designed as a voltage supply unit. In one embodiment of the particle beam device according to the invention, all deflection electrodes AE1 to AE1 _{n are} supplied with voltage by a single supply unit. In addition or as an alternative to this, it is provided that each of the deflection electrodes AE1 ₁ to AE1 _n of one each different supply unit is supplied with voltage.

The particle beam device according to the invention also has at least one supply cable, the supply cable being the supply unit with the deflection electrodes AE1 ₁ to AE1 ". The supply cable has a second number of conductors L1 ₁ to L1 _n and a longitudinal axis. Above and also below, a conductor is understood to mean an electrical conductor. The first number of deflection electrodes AE1 ₁ through AE1 _n and the second number of conductors L1 ₁ to L1 _n are identical. Depending on the first number of deflection electrodes AE1 ₁ through AE1 _n is the second number of conductors L1 ₁ Any choice up to L1 _n. For example, the second is number of ladders L1 ₁ up to L1 _{n is} an even number. In one embodiment of the particle beam device according to the invention, the second number of conductors is L1 ₁ to L1 _n 4, 6, 8, 10 or 12. It is expressly pointed out that the second number of conductors L1 ₁ to L1 _{n is} not limited to the aforementioned embodiments. Rather, every other number of ladders L1 ₁ to L1 _n which is suitable for the invention can be used.

The ladder L1 ₁ to L1 _n each have a second geometric arrangement with respect to one another and with regard to the longitudinal axis of the supply cable. In other words, the conductors are L1 ₁ to L1 _{n in} each case to one another and with respect to the longitudinal axis of the supply cable arranged in such a way that the conductors L1 ₁ to L1 _n occupy the second geometric arrangement. In other words, the conductors point L1 ₁ to L1 _{n have} a predeterminable distance and a predeterminable angular alignment to one another. Also point the ladder L1 ₁ to L1 _{n have} a predeterminable distance and a predeterminable angular alignment to the longitudinal axis of the supply cable. It is also provided that each of the conductors L1 ₁ to L1 _n a position assigned to it PL1 ₁ to PL1 _{occupies n} in the second geometric arrangement. For example, the second is number of ladders L1 ₁ to L1 _n arranged along a circle, the center of which is arranged on the longitudinal axis of the supply cable. In one embodiment, the second geometric arrangement is an n-fold rotationally symmetrical arrangement, the longitudinal axis of the supply cable being a second axis of symmetry.

In the particle beam device according to the invention, it is now provided that the first geometric arrangement of the deflection electrodes AE1 ₁ , to AE1 _{n of} the second geometric arrangement of the conductors L1 ₁ until L1 corresponds to _n. In other words, the deflection electrodes AE1 ₁ to AE1 _n to each other and with respect to the optical axis of the particle beam device on a geometric arrangement (namely the first geometric arrangement), which corresponds to the geometric arrangement (namely the second geometric arrangement), which the conductor L1 ₁ to L1 _n to each other and with respect to the longitudinal axis of the supply cable. In other words, they are deflection electrodes AE1 ₁ to AE1 _n are arranged identically to each other and with respect to the optical axis as the conductors L1 ₁ to L1 _n to each other and with reference to the longitudinal axis of the supply cable. It is also provided that the assigned position PAE1 _i in the first geometric arrangement _{corresponds to the assigned position PL1 i} in the second geometric arrangement, i being an integer for which: 1 i n. In other words, is the deflection electrode AE1 _{i arranged} in the first geometric arrangement at the same position as the conductor L1 _i in the second geometric arrangement.

For example, the deflection voltages applied to the deflection electrodes AE1 ₁ to AE1 _{n are} supplied, graduated from one another. In other words, have adjacent deflection electrodes AE1 ₁ to AE1 _n a different voltage to each other. In addition, adjacent deflection electrodes have the first number of deflection electrodes AE1 ₁ to AE1 _n, for example, have a small potential difference from one another, in particular in the range of ± 100 V. A first deflection electrode and a second deflection electrode of the deflection electrodes AE1 ₁ to AE1 _n are, for example, adjacent deflection electrodes when a center of a first center of gravity of the first deflection electrode and a second center of gravity of the second deflection electrode are at a greater distance from centers of gravity of all other deflection electrodes than the distance from the first center of gravity to the center. If adjacent deflection electrodes of the first number of deflection electrodes AE1 ₁ to AE1 _{n have} graded deflection voltages, then due to the identical geometric arrangement, the conductors L1 ₁ to L1 _n , which are the deflection voltages to the deflection electrodes AE1 ₁ up to AE1 _n , also apply the deflection voltage which is graduated from one another. The aforementioned gradation has an influence on the currents that are used to recharge the capacity. With an even, graduated voltage distribution (for example according to the above formula), the currents can be distributed evenly over the power supplies. This determines the effective capacitance in the form of the capacitance per unit length of two opposing conductors of the second number of conductors L1 ₁ to L1 _n , which are separated from one another, for example, by a filling unit and to which the maximum alternating voltage within the graduated voltage distribution is applied, by their spacing. The opposing conductors are not adjacent to each other. A first conductor and a second conductor of the ladder L1 ₁ to L1 _n are for example then Adjacent conductors if a first center of a first center of gravity of the first conductor and a second center of gravity of the second conductor are at a greater distance from centers of gravity of all other conductors than the distance from the first center of gravity to the center point. The distance between two opposing conductors of the second number of conductors L1 ₁ to L1 _n is, for example, 3 times, 4 times or 5 times as large as the distance between two mutually adjacent conductors of the second number of conductors L1 ₁ to L1 _n . In this way, for example, a capacitance in the form of the capacitance per unit length of the supply cable in the range from 40 pF per meter to 60 pF per meter is achieved, including the range limits.

In one embodiment of the particle beam device according to the invention, it is additionally or alternatively provided that the first geometric arrangement is a first n-fold rotationally symmetrical arrangement and / or that the second geometric arrangement is a second n-fold rotationally symmetrical arrangement. As already mentioned above, one embodiment of the particle beam device according to the invention provides, for example, that the optical axis of the particle beam device is a first axis of symmetry for the first geometric arrangement and / or that the longitudinal axis of the supply cable is a second axis of symmetry for the second geometric arrangement.

In a further embodiment of the particle beam device according to the invention, it is additionally or alternatively provided that each conductor L1 ₁ to L1 _{n is designed} to supply a selectable voltage and, depending on it, also a selectable current and that the deflection electrode AE1 _{i is} connected to the conductor L1 _{i in} such a way that the deflection electrode AE1 _{i has} the selectable voltage of the conductor L1 _{i connected to} it .

In yet another embodiment of the particle beam device according to the invention, it is additionally or alternatively provided that the first number of deflection electrodes AE1 ₁ through AE1 _n and the second number of conductors L1 ₁ to L1 _n n is an integer for which the following applies: 4 n 50. In a further embodiment of the particle beam device according to the invention, it is additionally or alternatively provided that n is an even number for which the following applies: 4 n 50.

In one embodiment of the particle beam device according to the invention, the supply cable of the particle beam device according to the invention additionally or alternatively has a filler around which the conductors L1 ₁ to L1 _n are arranged. In other words, the filler is a filling unit which is arranged in the supply cable and around which the conductors L1 ₁ to L1 _n are arranged.

For example, the filling unit is made of plastic. In particular, it is provided that the filling unit is tubular.

In a further embodiment of the particle beam device according to the invention, the particle beam device according to the invention additionally or alternatively has an insulation unit which the conductors L1 ₁ to L1 _n partially or completely. For example, the insulation unit is arranged in the supply cable and comprises the conductors L1 ₁ up to L1 _n partially or completely. The insulation unit is formed, for example, from a plastic that has electrically insulating properties. In particular, the insulation unit is formed, for example, from a foamed material which has enclosed air regions in order to achieve a low relative dielectric constant.

In yet another embodiment of the particle beam device according to the invention, the particle beam device according to the invention additionally or alternatively has an outer shield which is designed as an outer layer of the supply cable. In other words, the supply cable has an outer layer which is designed as an outer shield. For example, the outer shield is designed as a wire mesh, in particular as a metal wire mesh. A metal foil is also suitable, in addition or as an alternative, as an external shield. The external shielding shields the supply cable from stray fields and prevents the radiation of electromagnetic waves.

• - die Ablenkeinheit weist eine erste Ablenkelektrode AE1₁ eine zweite Ablenkelektrode AE1₂ , eine dritte Ablenkelektrode AE1₃ sowie eine vierte Ablenkelektrode AE1₄ auf, und das Versorgungskabel weist einen ersten Leiter L1₁ , einen zweiten Leiter L1₂ , einen dritten Leiter L1₃ und einen vierten Leiter L1₄ auf, wobei die erste Ablenkelektrode AE1₁ mit dem ersten Leiter L1₁ verbunden ist, wobei die zweite Ablenkelektrode AE1₂ mit dem zweiten Leiter L1₂ verbunden ist, wobei die dritte Ablenkelektrode AE1₃ mit dem dritten Leiter L1₃ verbunden ist und wobei die vierte Ablenkelektrode AE1₄ mit dem vierten Leiter L1₄ verbunden ist. Die zugeordnete Position PAE1i in der ersten geometrischen Anordnung entspricht der zugeordneten Position PL1_i in der zweiten geometrischen Anordnung, wobei i eine ganze Zahl ist für die gilt: 1 ≤ i ≤ 4. Mit anderen Worten ausgedrückt, ist die Ablenkelektrode AE1_i in der ersten geometrischen Anordnung an derselben Position angeordnet wie der Leiter L1_i in der zweiten geometrischen Anordnung;
• - die Ablenkeinheit weist eine erste Ablenkelektrode AE1₁ , eine zweite Ablenkelektrode AE1₂ , eine dritte Ablenkelektrode AE1₃ , eine vierte Ablenkelektrode AE1₄ , eine fünfte Ablenkelektrode AE1₅ sowie eine sechste Ablenkelektrode AE16 auf, und das Versorgungskabel weist einen ersten Leiter L1₁ , einen zweiten Leiter L1₂ , einen dritten Leiter L1₃ , einen vierten Leiter L1₄ , einen fünften Leiter L1₅ und einen sechsten Leiter L1₆ auf, wobei die erste Ablenkelektrode AE1₁ mit dem ersten Leiter L1₁ verbunden ist, wobei die zweite Ablenkelektrode AE1₂ mit dem zweiten Leiter L1₂ verbunden ist, wobei die dritte Ablenkelektrode AE1₃ mit dem dritten Leiter L1₃ verbunden ist, wobei die vierte Ablenkelektrode AE1₄ mit dem vierten Leiter L1₄ verbunden ist, wobei die fünfte Ablenkelektrode AE1₅ mit dem fünften Leiter L1₅ verbunden ist und wobei die sechste Ablenkelektrode AE1₆ mit dem sechsten Leiter L1₆ verbunden ist. Die zugeordnete Position PAE1_i in der ersten geometrischen Anordnung entspricht der zugeordneten Position PL1_i in der zweiten geometrischen Anordnung, wobei i eine ganze Zahl ist für die gilt: 1 ≤ i ≤ 6. Mit anderen Worten ausgedrückt, ist die Ablenkelektrode AE1_i in der ersten geometrischen Anordnung an derselben Position angeordnet wie der Leiter L1_i in der zweiten geometrischen Anordnung;
• - die Ablenkeinheit weist eine erste Ablenkelektrode AE1₁ , eine zweite Ablenkelektrode AE1₂ , eine dritte Ablenkelektrode AE1₃ , eine vierte Ablenkelektrode AE1₄ , eine fünfte Ablenkelektrode AE1₅ , eine sechste Ablenkelektrode AE1₆ , eine siebte Ablenkelektrode AE1₇ sowie eine achte Ablenkelektrode AE1₈ auf, und das Versorgungskabel weist einen ersten Leiter L1₁ , einen zweiten Leiter L1₂ , einen dritten Leiter L1₃ , einen vierten Leiter L1₄ , einen fünften Leiter L1₅ , einen sechsten Leiter L1₆, einen siebten Leiter L1₇ und einen achten Leiter L1₈ auf, wobei die erste Ablenkelektrode AE1₁ mit dem ersten Leiter L1₁ verbunden ist, wobei die zweite Ablenkelektrode AE1₂ mit dem zweiten Leiter L1₂ verbunden ist, wobei die dritte Ablenkelektrode AE1₃ mit dem dritten Leiter L1₃ verbunden ist, wobei die vierte Ablenkelektrode AE1₄ mit dem vierten Leiter L1₄ verbunden ist, wobei die fünfte Ablenkelektrode AE1₅ mit dem fünften Leiter L1₅ verbunden ist, wobei die sechste Ablenkelektrode AE1₆ mit dem sechsten Leiter L1₆ verbunden ist, wobei die siebte Ablenkelektrode AE1₇ mit dem siebten Leiter L1₇ verbunden ist und wobei die achte Ablenkelektrode AE1₈ mit dem achten Leiter L1₈ verbunden ist. Auch hier entspricht die zugeordnete Position PAE1_i in der ersten geometrischen Anordnung der zugeordneten Position PL1_i in der zweiten geometrischen Anordnung, wobei i eine ganze Zahl ist für die gilt: 1 ≤ i ≤ 8. Mit anderen Worten ausgedrückt, ist die Ablenkelektrode AE1_i in der ersten geometrischen Anordnung an derselben Position angeordnet wie der Leiter L1_i in der zweiten geometrischen Anordnung.

In one embodiment of the particle beam device according to the invention, it is additionally or alternatively provided that the particle beam device according to the invention has one of the following features:

• the deflection unit has a first deflection electrode AE1 ₁ a second deflection electrode AE1 ₂ , a third deflection electrode AE1 ₃ and a fourth deflection electrode AE1 ₄ and the supply cable has a first conductor L1 ₁ , a second conductor L1 ₂ , a third leader L1 ₃ and a fourth conductor L1 ₄ on, the first deflection electrode AE1 ₁ with the first conductor L1 ₁ is connected, the second deflection electrode AE1 ₂ with the second conductor L1 ₂ is connected, the third deflection electrode AE1 ₃ with the third conductor L1 ₃ is connected and wherein the fourth deflection electrode AE1 ₄ with the fourth head L1 ₄ connected is. The assigned position PAE1i in the first geometric arrangement corresponds to the assigned position PL1 _i in the second geometric arrangement, where i is an integer for which: 1 i 4. In other words, the deflection electrode AE1 _{i is} in the first geometric arrangement arranged in the same position as the conductor L1 _i in the second geometric arrangement;
• the deflection unit has a first deflection electrode AE1 ₁ , a second deflection electrode AE1 ₂ , a third deflection electrode AE1 ₃ , a fourth deflection electrode AE1 ₄ , a fifth deflection electrode AE1 ₅ and a sixth deflection electrode AE16, and the supply cable has a first conductor L1 ₁ , a second conductor L1 ₂ , a third leader L1 ₃ , a fourth leader L1 ₄ , a fifth leader L1 ₅ and a sixth conductor L1 ₆ , the first deflection electrode AE1 ₁ with the first head L1 ₁ is connected, the second deflection electrode AE1 ₂ with the second conductor L1 ₂ is connected, the third deflection electrode AE1 ₃ with the third conductor L1 ₃ is connected, the fourth deflection electrode AE1 ₄ with the fourth head L1 ₄ is connected, the fifth deflection electrode AE1 ₅ with the fifth conductor L1 ₅ is connected and wherein the sixth deflection electrode AE1 ₆ is connected to the sixth conductor L1 ₆ . The assigned position PAE1 _i in the first geometrical arrangement corresponds to the assigned position PL1 _i in the second geometrical arrangement, where i is an integer for which: 1 i 6. In other words, the deflection electrode AE1 _i in the first geometrical arrangement arranged at the same position as the conductor L1 _i in the second geometrical arrangement;
• the deflection unit has a first deflection electrode AE1 ₁ , a second deflection electrode AE1 ₂ , a third deflection electrode AE1 ₃ , a fourth deflection electrode AE1 ₄ , a fifth deflection electrode AE1 ₅ , a sixth deflection electrode AE1 ₆ , a seventh deflection electrode AE1 ₇ and an eighth deflection electrode AE1 ₈ and the supply cable has a first conductor L1 ₁ , a second conductor L1 ₂ , a third leader L1 ₃ , a fourth leader L1 ₄ , a fifth leader L1 ₅ , a sixth conductor L1 ₆ , a seventh conductor L1 ₇ and an eighth head L1 ₈ on, the first deflection electrode AE1 ₁ with the first head L1 ₁ is connected, the second deflection electrode AE1 ₂ with the second conductor L1 ₂ is connected, the third deflection electrode AE1 ₃ with the third conductor L1 ₃ is connected, the fourth deflection electrode AE1 ₄ with the fourth head L1 ₄ is connected, the fifth deflection electrode AE1 ₅ with the fifth conductor L1 ₅ is connected, the sixth deflection electrode AE1 ₆ is connected to the sixth conductor L1 ₆ , the seventh deflection electrode AE1 ₇ with the seventh head L1 ₇ is connected and where the eighth deflection electrode AE1 ₈ with the eighth head L1 ₈ connected is. Here, too, the assigned position PAE1 _i in the first geometric arrangement _{corresponds to the assigned position PL1 i} in the second geometric arrangement, where i is an integer for which: 1 i 8. In other words, the deflection electrode AE1 _i arranged in the first geometric arrangement at the same position as the conductor L1 _i in the second geometric arrangement.

In a further embodiment of the particle beam device according to the invention, it is additionally or alternatively provided that the particle beam device according to the invention has a plurality of deflection units, supply units and supply cables. For example, in one embodiment of the particle beam device according to the invention it is additionally or alternatively provided that the aforementioned deflection unit is a first deflection unit, that the aforementioned supply unit is a first supply unit and that the aforementioned supply cable is a first supply cable. In addition, the particle beam device has a second deflection unit for generating at least one electric field and for deflecting the particle beam. The second deflection unit has a third number of deflection electrodes AE2 ₁ to AE2 _m , where m is an integer greater than or equal to 4. The third number of deflection electrodes AE2 ₁ to AE2 _{m of} the second deflection unit can be selected as required depending on the aforementioned condition. For example, the third is number of deflection electrodes AE2 ₁ to AE2 _{m of} the second deflection unit is an even number. In one embodiment of the particle beam device according to the invention, the third number is deflection electrodes AE2 ₁ to AE2 _{m of} the second deflection unit 4, 6, 8, 10 or 12. It is expressly pointed out that the third number of deflection electrodes AE2 ₁ to AE2 _{m of} the second deflection unit is not limited to the aforementioned embodiments. Rather, every third number is deflection electrodes AE2 ₁ to AE2 _{m of} the second deflection unit, which is suitable for the invention.

The deflection electrodes AE2 ₁ to AE2 _{m of} the second deflection unit each have a third geometric arrangement with respect to one another and with regard to the optical axis of the particle beam device according to the invention. In other words, they are deflection electrodes AE2 ₁ to AE2 _{m of} the second deflection unit are arranged in relation to one another and with respect to the optical axis in such a way that the deflection electrodes AE2 ₁ to AE2 _{m of} the second deflection unit occupy the third geometric arrangement. In other words, the deflection electrodes AE2 ₁ to AE2 _{m of} the second deflection unit have a predeterminable distance and a predeterminable angular alignment with respect to one another. Furthermore, the deflection electrodes AE2 ₁ to AE2 _{m of} the second deflection unit has a predeterminable distance and a predeterminable angular alignment to the optical axis of the particle beam device. Furthermore it is provided that each of the deflection electrodes AE2 ₁ up to AE2 _m a position assigned to it PAE2 ₁ to PAE2 _m in the third geometric arrangement. For example, the third is number of deflection electrodes AE2 _{1 to AE2 m of} the second deflection unit arranged along a circle, the center of which is arranged on the optical axis of the particle beam device according to the invention. In one embodiment of the particle beam device according to the invention, the third geometric arrangement is an m-fold rotationally symmetrical arrangement, the optical axis of the particle beam device according to the invention being a third axis of symmetry.

The particle beam device according to the invention also has at least one second supply unit for supplying the deflection electrodes AE2 ₁ up to AE2 _{m of} the second deflection unit with voltage and, depending on this, also with current. For example, the second supply unit is designed as a voltage supply unit. In one embodiment of the particle beam device according to the invention, all of the deflection electrodes are AE2 ₁ to AE2 _{m of} the second deflection unit with a single supply unit supplied with voltage. Additionally or alternatively, it is provided that each of the deflection electrodes AE2 ₁ until AE2 _{m of} the second deflection unit is supplied with voltage by a different supply unit in each case.

The particle beam device according to the invention also has at least one second supply cable, the second supply cable being the second supply unit with the deflection electrodes AE2 ₁ to AE2 _m connects the second deflection unit. The second supply cable has a fourth number of conductors L2 ₁ to L2 _m and a longitudinal axis in the form of a second longitudinal axis. The third number of deflection electrodes AE2 ₁ to AE2 _{m of} the second deflection unit and the fourth number of conductors L2 ₁ up to L2 _{m of} the second supply cable are identical. The fourth number of ladders L2 ₁ to L2 _{m of} the second supply cable is a function of the third number of deflection electrodes AE2 ₁ up to AE2 _{m of} the second deflection unit can be selected. For example, the fourth is number of ladders L2 ₁ up to L2 _m an even number. In one embodiment of the particle beam device according to the invention, the fourth number of conductors is L2 ₁ to L2 _{m of} the second supply cable 4, 6, 8, 10 or 12. It is expressly pointed out that the fourth number of conductors L2 ₁ to L2 _{m of} the second supply cable is not limited to the aforementioned embodiments. Rather, every fourth is number of ladders L2 ₁ can be used up to L2 _{m of} the second supply cable, which is suitable for the invention.

The ladder L2 ₁ to L2 _{m of} the second supply cable each have a fourth geometric arrangement with respect to one another and with regard to the longitudinal axis of the second supply cable. In other words, the conductors are L2 ₁ to L2 _{m of} the second supply cable in each case to each other and with respect to the longitudinal axis of the second supply cable arranged in such a way that the conductors L2 ₁ to L2 _{m of} the second supply cable occupy the fourth geometric arrangement. In other words, the conductors point L2 ₁ to L2 _{m of} the second supply cable have a predeterminable distance and a predeterminable angular alignment to one another. Also point the ladder L2 ₁ to L2 _{m of} the second supply cable have a predeterminable distance and a predeterminable angular alignment to the longitudinal axis of the second supply cable. It is also provided that each of the conductors L2 ₁ to L2 _{m of} the second supply cable a position assigned to it PL2 ₁ to PL2 _m in the second geometric arrangement. For example, the fourth is number of ladders L2 ₁ to L2 _{m of} the second supply cable arranged along a circle, the center of which is arranged on the longitudinal axis of the second supply cable. In one embodiment, the fourth geometric arrangement is an m-fold rotationally symmetrical arrangement, the longitudinal axis of the second supply cable being a fourth axis of symmetry.

In the particle beam device according to the invention, it is now provided that the third geometric arrangement of the deflection electrodes AE2 ₁ to AE2 _{m of} the second deflection unit of the fourth geometric arrangement of the conductors L2 ₁ to L2 _{m of} the second supply cable. In other words, the deflection electrodes AE2 ₁ to AE2 _{m of} the second deflection unit to each other and with respect to the optical axis of the particle beam device on a geometric arrangement (namely the third geometric arrangement), which corresponds to the geometric arrangement (namely the fourth geometric arrangement), which the conductor L2 ₁ to L2 _{m of} the second supply cable to each other and with respect to the longitudinal axis of the second supply cable. In other words, they are deflection electrodes AE2 ₁ to AE2 _{m of} the second deflection unit to one another and with respect to the optical axis arranged identically as the conductors of the fourth number of conductors L2 ₁ to L2 _{m of} the second supply cable to each other and with reference to the longitudinal axis of the second supply cable. It is further provided that the assigned position PAE2 _k in the third geometric arrangement _{corresponds to the assigned position PL2 k} in the fourth geometric arrangement, where k is an integer for which: 1 k m the deflection electrode AE2 _{k arranged} in the third geometrical arrangement at the same position as the conductor L2 _k in the fourth geometrical arrangement.

In one embodiment of the particle beam device according to the invention, it is additionally or alternatively provided that the third geometric arrangement is a third m-fold rotationally symmetrical arrangement and / or that the fourth geometric arrangement is a fourth m-fold rotationally symmetrical arrangement. As already mentioned above, one embodiment of the particle beam device according to the invention provides, for example, that the optical axis of the particle beam device is a third axis of symmetry for the third geometric arrangement and / or that the longitudinal axis of the second supply cable is a fourth axis of symmetry for the fourth geometric arrangement.

In a further embodiment of the particle beam device according to the invention, it is additionally or alternatively provided that each conductor L2 ₁ to L2 _{m of} the second supply cable is designed to supply a selectable voltage and, depending on it, also a selectable current and that the deflection electrode AE2 _{k of} the second deflection unit is connected to the conductor L2 _{k of} the second supply cable in such a way that the deflection electrode AE2 _{k of} the second Deflection unit has the selectable voltage of the conductor L2 _{k of} the second supply cable connected to it.

In yet another embodiment of the particle beam device according to the invention, it is additionally or alternatively provided that the third number of deflection electrodes AE2 ₁ to AE2 _{m of} the second deflection unit and the fourth number of conductors L2 ₁ to L2 _{m of} the second supply cable m is an integer for which: 4 m 50. In a further embodiment of the particle beam device according to the invention, it is additionally or alternatively provided that m is an even number for which: 4 m 50 .

• - die zweite Ablenkeinheit weist eine erste Ablenkelektrode AE2₁ , eine zweite Ablenkelektrode AE2₂ , eine dritte Ablenkelektrode AE2₃ sowie eine vierte Ablenkelektrode AE2₄ auf, und das zweite Versorgungskabel weist einen ersten Leiter L2₁ , einen zweiten Leiter L2₂ , einen dritten Leiter L2₃ und einen vierten Leiter L2₄ auf, wobei die erste Ablenkelektrode AE2₁ der zweiten Ablenkeinheit mit dem ersten Leiter L2₁ des zweiten Versorgungskabels verbunden ist, wobei die zweite Ablenkelektrode AE2₂ der zweiten Ablenkeinheit mit dem zweiten Leiter L2₂ des zweiten Versorgungskabels verbunden ist, wobei die dritte Ablenkelektrode AE2₃ der zweiten Ablenkeinheit mit dem dritten Leiter L2₃ des zweiten Versorgungskabels verbunden ist und wobei die vierte Ablenkelektrode AE2₄ der zweiten Ablenkeinheit mit dem vierten Leiter L2₄ des zweiten Versorgungskabels verbunden ist. Die zugeordnete Position PAE2_k in der dritten geometrischen Anordnung entspricht der zugeordneten Position PL2_k in der vierten geometrischen Anordnung, wobei k eine ganze Zahl ist für die gilt: 1 ≤ k ≤ 4. Mit anderen Worten ausgedrückt, ist die Ablenkelektrode AE2_k in der dritten geometrischen Anordnung an derselben Position angeordnet wie der Leiter L2_k in der vierten geometrischen Anordnung;
• - die zweite Ablenkeinheit weist eine erste Ablenkelektrode AE2₁ , eine zweite Ablenkelektrode AE2₂ , eine dritte Ablenkelektrode AE2₃ , eine vierte Ablenkelektrode AE2₄ , eine fünfte Ablenkelektrode AE2₅ sowie eine sechste Ablenkelektrode AE2₆ auf, und das zweite Versorgungskabel weist einen ersten Leiter L2₁ , einen zweiten Leiter L2₂ , einen dritten Leiter L2₃ , einen vierten Leiter L2₄ , einen fünften Leiter L2₅ und einen sechsten Leiter L2₆ auf, wobei die erste Ablenkelektrode AE2₁ der zweiten Ablenkeinheit mit dem ersten Leiter L2₁ des zweiten Versorgungskabels verbunden ist, wobei die zweite Ablenkelektrode AE2₂ .der zweiten Ablenkeinheit mit dem zweiten Leiter L2₂ des zweiten Versorgungskabels verbunden ist, wobei die dritte Ablenkelektrode AE2₃ der zweiten Ablenkeinheit mit dem dritten Leiter L2₃ des zweiten Versorgungskabels verbunden ist, wobei die vierte Ablenkelektrode AE2₄ der zweiten Ablenkeinheit mit dem vierten Leiter L2₄ des zweiten Versorgungskabels verbunden ist, wobei die fünfte Ablenkelektrode L2₅ der zweiten Ablenkeinheit mit dem fünften Leiter L2₅ des zweiten Versorgungskabels verbunden ist und wobei die sechste Ablenkelektrode AE2₆ der zweiten Ablenkeinheit mit dem sechsten Leiter L2₆ des zweiten Versorgungskabels verbunden ist. Die zugeordnete Position PAE2_k in der dritten geometrischen Anordnung entspricht der zugeordneten Position PL2_k in der vierten geometrischen Anordnung, wobei k eine ganze Zahl ist für die gilt: 1 ≤ k ≤ 6. Mit anderen Worten ausgedrückt, ist die Ablenkelektrode AE2_k in der dritten geometrischen Anordnung an derselben Position angeordnet wie der Leiter L2_k in der vierten geometrischen Anordnung;
• - die zweite Ablenkeinheit weist eine erste Ablenkelektrode AE2₁ , eine zweite Ablenkelektrode AE2₂ , eine dritte Ablenkelektrode AE2₃ , eine vierte Ablenkelektrode AE2₄ , eine fünfte Ablenkelektrode AE2₅ , eine sechste Ablenkelektrode AE2₆ , eine siebte Ablenkelektrode AE2₇ sowie eine achte Ablenkelektrode AE2₈ auf, und das zweite Versorgungskabel weist einen ersten Leiter L2₁ , einen zweiten Leiter L2₂ , einen dritten Leiter L2₃ , einen vierten Leiter L2₄ , einen fünften Leiter L2₅ , einen sechsten Leiter L2₆ , einen siebten Leiter L2₇ und einen achten Leiter L2₈ auf, wobei die erste Ablenkelektrode AE2₁ der zweiten Ablenkeinheit mit dem ersten Leiter L2₁ des zweiten Versorgungskabels verbunden ist, wobei die zweite Ablenkelektrode AE2₂ der zweiten Ablenkeinheit mit dem zweiten Leiter L2₂ des zweiten Versorgungskabels verbunden ist, wobei die dritte Ablenkelektrode AE2₃ der zweiten Ablenkeinheit mit dem dritten Leiter L2₃ des zweiten Versorgungskabels verbunden ist, wobei die vierte Ablenkelektrode AE2₄ der zweiten Ablenkeinheit mit dem vierten Leiter L2₄ des zweiten Versorgungskabels verbunden ist, wobei die fünfte Ablenkelektrode AE2₅ der zweiten Ablenkeinheit mit dem fünften Leiter L2₅ des zweiten Versorgungskabels verbunden ist, wobei die sechste Ablenkelektrode AE2₆ der zweiten Ablenkeinheit mit dem sechsten Leiter L2₆ des zweiten Versorgungskabels verbunden ist, wobei die siebte Ablenkelektrode AE2₇ der zweiten Ablenkeinheit mit dem siebten Leiter L2₇ des zweiten Versorgungskabels verbunden ist und wobei die achte Ablenkelektrode AE2₈ der zweiten Ablenkeinheit mit dem achten Leiter L2₈ des zweiten Versorgungskabels verbunden ist. Die zugeordnete Position PAE2_k in der dritten geometrischen Anordnung entspricht der zugeordneten Position PL2_k in der vierten geometrischen Anordnung, wobei k eine ganze Zahl ist für die gilt: 1 ≤ k ≤ 8. Mit anderen Worten ausgedrückt, ist die Ablenkelektrode AE2_k in der dritten geometrischen Anordnung an derselben Position angeordnet wie der Leiter L2_k in der vierten geometrischen Anordnung.

In one embodiment of the particle beam device according to the invention, it is additionally or alternatively provided that the particle beam device has one of the following features:

• the second deflection unit has a first deflection electrode AE2 ₁ , a second deflection electrode AE2 ₂ , a third deflection electrode AE2 ₃ and a fourth deflection electrode AE2 ₄ and the second supply cable has a first conductor L2 ₁ , a second conductor L2 ₂ , a third leader L2 ₃ and a fourth conductor L2 ₄ on, the first deflection electrode AE2 ₁ the second deflector with the first conductor L2 ₁ of the second supply cable, the second deflection electrode AE2 ₂ the second deflector with the second conductor L2 ₂ of the second supply cable, the third deflection electrode AE2 ₃ the second deflector with the third conductor L2 ₃ of the second supply cable is connected and wherein the fourth deflection electrode AE2 ₄ the second deflector with the fourth conductor L2 ₄ of the second supply cable is connected. The assigned position PAE2 _k in the third geometrical arrangement corresponds to the assigned position PL2 _k in the fourth geometrical arrangement, where k is an integer for which: 1 k 4. In other words, the deflection electrode AE2 _k in the third geometrical arrangement arranged at the same position as the conductor L2 _k in the fourth geometrical arrangement;
• the second deflection unit has a first deflection electrode AE2 ₁ , a second deflection electrode AE2 ₂ , a third deflection electrode AE2 ₃ , a fourth deflection electrode AE2 ₄ , a fifth deflection electrode AE2 ₅ and a sixth deflection electrode AE2 ₆ and the second supply cable has a first conductor L2 ₁ , a second conductor L2 ₂ , a third leader L2 ₃ , a fourth leader L2 ₄ , a fifth leader L2 ₅ and a sixth leader L2 ₆ on, the first deflection electrode AE2 ₁ the second deflector with the first conductor L2 ₁ of the second supply cable, the second deflection electrode AE2 ₂ .the second deflection unit with the second conductor L2 ₂ of the second supply cable, the third deflection electrode AE2 ₃ the second deflector with the third conductor L2 ₃ of the second supply cable is connected, the fourth deflection electrode AE2 ₄ the second deflector with the fourth conductor L2 ₄ of the second supply cable, the fifth deflection electrode L2 ₅ the second deflector with the fifth conductor L2 ₅ of the second supply cable is connected and wherein the sixth deflection electrode AE2 ₆ the second deflection unit with the sixth conductor L2 ₆ of the second supply cable is connected. The assigned position PAE2 _k in the third geometric arrangement corresponds to the assigned position PL2 _k in the fourth geometric arrangement, where k is an integer for which: 1 k 6. In other words, the deflection electrode AE2 _k in the third geometrical arrangement arranged at the same position as the conductor L2 _k in the fourth geometrical arrangement;
• the second deflection unit has a first deflection electrode AE2 ₁ , a second deflection electrode AE2 ₂ , a third deflection electrode AE2 ₃ , a fourth deflection electrode AE2 ₄ , a fifth deflection electrode AE2 ₅ , a sixth deflection electrode AE2 ₆ , a seventh deflection electrode AE2 ₇ and an eighth deflection electrode AE2 ₈ and the second supply cable has a first conductor L2 ₁ , a second conductor L2 ₂ , a third leader L2 ₃ , a fourth leader L2 ₄ , a fifth head L2 ₅ , a sixth leader L2 ₆ , a seventh leader L2 ₇ and an eighth head L2 ₈ on, the first deflection electrode AE2 ₁ the second deflector with the first conductor L2 ₁ of the second supply cable, the second deflection electrode AE2 ₂ the second deflector with the second conductor L2 ₂ of the second supply cable, the third deflection electrode AE2 ₃ the second deflector with the third conductor L2 ₃ of the second supply cable is connected, the fourth deflection electrode AE2 ₄ the second deflector with the fourth conductor L2 ₄ of the second supply cable, the fifth deflection electrode AE2 ₅ the second deflector with the fifth conductor L2 ₅ of the second supply cable, the sixth deflection electrode AE2 ₆ the second deflection unit with the sixth conductor L2 ₆ of the second supply cable, the seventh deflection electrode AE2 ₇ the second deflection unit with the seventh conductor L2 ₇ of the second supply cable is connected and wherein the eighth deflection electrode AE2 ₈ the second deflection unit with the eighth conductor L2 ₈ of the second supply cable is connected. The assigned position PAE2 _k in the third geometric arrangement corresponds to the assigned position PL2 _k in the fourth geometric arrangement, where k is an integer for which: 1 k 8. In other words, the deflection electrode AE2 _k in the third geometric arrangement arranged in the same position as the conductor L2 _k in the fourth geometric arrangement.

In a further embodiment of the particle beam device according to the invention, the second supply cable of the particle beam device according to the invention additionally or alternatively has a filler around which the conductors L2 ₁ to L2 _{m of} the second supply cable are arranged. In other words, the filler is a filling unit which is arranged in the second supply cable and around which the conductors L2 ₁ to L2 _{m of} the second supply cable are arranged. For example, this filling unit is made of plastic. In particular, it is provided that the filling unit is tubular.

In a still further embodiment of the particle beam device according to the invention, the second supply cable of the particle beam device according to the invention additionally or alternatively has an insulation unit which the conductors L2 ₁ to L2 _{m of} the second supply cable partially or completely. For example, the insulation unit is arranged in the second supply cable and comprises the conductors L2 ₁ up to L2 _{m of} the second supply cable partially or completely. The insulation unit is formed, for example, from a plastic that has electrically insulating properties. In particular, the insulation unit is formed, for example, from a foamed material which has enclosed air regions in order to achieve a low relative dielectric constant.

In one embodiment of the particle beam device according to the invention, the second supply cable of the particle beam device according to the invention additionally or alternatively has an outer shield which is designed as an outer layer of the second supply cable. In other words, the second supply cable has an outer layer which is designed as an outer shield. For example, the outer shield is designed as a wire mesh, in particular as a metal wire mesh. A metal foil is also suitable, in addition or as an alternative, as an external shield. The outer shield shields the second supply cable from stray fields and prevents the radiation of electromagnetic waves.

In a further embodiment of the particle beam device according to the invention, it is additionally or alternatively provided that the second deflection unit is designed for the time-delayed deflection of the particle beam. The background to this is as follows. The speed of propagation in the supply cables used in the invention is a fraction of the speed of light and is dependent on the relative dielectric constant of the insulation unit used. It is known, however, that the propagation speed of the particles of the particle beam device is significantly lower than the propagation speed in the supply cables. This can result in delays of up to 1 µ _s . The control signals of the second deflection unit are thus delayed in time in such a way that the slower particles of the particle beam can be deflected as desired

As already explained above, in one embodiment of the particle beam device according to the invention it is additionally or alternatively provided that the particle beam device according to the invention has a plurality of deflection units. For example, in one embodiment of the particle beam device according to the invention it is additionally or alternatively provided that the particle beam device according to the invention has the above-mentioned first deflection unit, the above-mentioned supply unit and the above-mentioned supply cable. In addition, the particle beam device has a second deflection unit for generating at least one electric field and for deflecting the particle beam. The second deflection unit has a third number of deflection electrodes AE3 ₁ to AE3 _n . The third number of deflection electrodes AE3 ₁ to AE3 _{n of} the second deflection unit is a function of the first number of deflection electrodes AE1 ₁ to AE1 _{n of} the first deflection unit can be selected as required. The first number of deflection electrodes AE1 ₁ to AE1 _{n of} the first deflection unit and the third number of deflection electrodes AE3 ₁ to AE3 _{n of} the second deflection unit are identical. For example, the third number of deflection electrodes AE3 ₁ to AE3 _{n of} the second deflection unit is an even number. In one embodiment of the particle beam device according to the invention, the third number of deflection electrodes AE3 ₁ to AE3 _{n of} the second deflection unit is 4, 6, 8, 10 or 12. It is expressly pointed out that the third number of deflection electrodes AE3 ₁ to AE3 _{n of} the second deflection unit is not limited to the aforementioned embodiments. Rather, every third number of deflection electrodes AE3 ₁ to AE3 _{n of} the second deflection unit can be used, which is suitable for the invention. The deflection electrodes AE3 ₁ to AE3 _{n of} the second deflection unit each have a third geometric arrangement with respect to one another and with respect to the optical axis of the particle beam device according to the invention. In other words, the deflection electrodes AE3 ₁ to AE3 _{n of} the second deflection unit are arranged with respect to one another and with respect to the optical axis in such a way that the deflection electrodes AE3 ₁ to AE3 _{n of} the second deflection unit assume the third geometric arrangement. In other words, the deflection electrodes AE3 ₁ to AE3 _{n of} the second deflection unit have a predeterminable distance and a predeterminable angular alignment with respect to one another. Furthermore, the deflection electrodes AE3 ₁ to AE3 _{n of} the second deflection unit have a predeterminable distance and a predeterminable angular alignment with respect to the optical axis of the particle beam device. It is also provided that each of the deflection electrodes AE3 ₁ to AE3 _{n of} the second deflection unit assumes a position PAE3 ₁ to PAE3 _n assigned to it in the third geometric arrangement. For example, the third number of deflection electrodes AE3 ₁ to AE3 _{n of} the second deflection unit is arranged along a circle whose center point is arranged on the optical axis of the particle beam device according to the invention. In one embodiment of the particle beam device according to the invention, the third geometric arrangement is an n-fold rotationally symmetrical arrangement, the optical axis of the particle beam device according to the invention being a third axis of symmetry. In the embodiment of the particle beam device according to the invention now explained here, the supply cable connects the supply unit which supplies the deflection electrodes AE1 ₁ to AE1 _{n of} the first deflection unit is used, also with the deflection electrodes AE3 ₁ to AE3 _{n of} the second deflection unit. Thus, a single supply unit is used to supply both the deflection electrodes AE1 to AE1 _{n of} the first deflection unit and the deflection electrodes AE3 ₁ to AE3 _{n of} the second deflection unit with voltage and, depending thereon, also with current. In this embodiment of the particle beam device according to the invention, the deflection electrode AE3 _{i of} the second deflection unit (i) is assigned to the different deflection electrode AE1 _{i of} the first deflection unit, which is offset by 180 ° with respect to the optical axis, and (ii) is connected to the same conductor L1i of the supply cable which the associated deflection electrode AE1i of the first deflection unit is supplied with voltage. It has been shown that this embodiment makes it possible to save numerous electronic components compared to other embodiments of the invention.

In a further embodiment of the particle beam device according to the invention, it is additionally or alternatively provided to use a transit time chain of passive components as the supply cable in order to take into account a transit time of the particles of the particle beam from the first deflection unit to the second deflection unit. For example, the delay chain has a series of coils in series and capacitors to ground. By choosing the number of coils and capacitors, choosing the capacitance of the capacitors and choosing the inductance of the coils, it is possible to set a limit frequency, a characteristic impedance and a delay time. The cut-off frequency is selected so that it is sufficiently large for a desired bandwidth of the deflection signal. The wave impedance is chosen so that it corresponds to the wave impedance of the supply cable. The delay time is chosen so that it corresponds to the transit time of the primary particles from the first deflection unit to the second deflection unit. In this way, an inexpensive implementation of the transit time adjustment is obtained, since the second deflection unit does not require its own supply unit and its own supply cable.

As already mentioned above, in one embodiment of the particle beam device according to the invention it is additionally or alternatively provided that the particle beam device is designed as an electron beam device and / or as an ion beam device.

In a further embodiment of the particle beam device according to the invention it is additionally or alternatively provided that the beam generator for generating a particle beam with charged primary particles as a first beam generator for generating a first particle beam with first charged primary particles and the objective lens as a first objective lens for focusing the first particle beam the object is formed. In addition, the particle beam device has at least one second beam generator for generating it a second particle beam with second charged primary particles and at least one second objective lens for focusing the second particle beam on the object. The second charged primary particles are, for example, electrons or ions.

• 1 eine Ablenkeinheit in Form eines Multipols gemäß dem Stand der Technik;
• 2 eine schematische Darstellung eines ersten Teilchenstrahlgeräts;
• 3 eine schematische Darstellung eines zweiten Teilchenstrahlgeräts;
• 4 eine schematische Darstellung eines dritten Teilchenstrahlgeräts;
• 5 eine schematische Darstellung einer Ablenkeinheit, die mit einem Versorgungskabel an einer Versorgungseinheit angeschlossen ist;
• 6 eine schematische Darstellung der Ablenkeinheit gemäß 5;
• 7 eine schematische Darstellung des Versorgungskabels gemäß 5;
• 8 eine schematische Darstellung einer Doppelablenkeinrichtung mit einer ersten Ablenkeinheit, die mit einem ersten Versorgungskabel an einer ersten Versorgungseinheit angeschlossen ist, und mit einer zweiten Ablenkeinheit, die mit einem zweiten Versorgungskabel an einer zweiten Versorgungseinheit angeschlossen ist;
• 9 eine schematische Darstellung der zweiten Ablenkeinheit gemäß 8;
• 10 eine schematische Darstellung des zweiten Versorgungskabels gemäß 8;
• 11 eine schematische Darstellung einer weiteren Doppelablenkeinrichtung mit einer ersten Ablenkeinheit, die mit einem Versorgungskabel an einer Versorgungseinheit angeschlossen ist, und mit einer zweiten Ablenkeinheit, die mit dem Versorgungskabel an der Versorgungseinheit angeschlossen ist; sowie
• 12 eine schematische Darstellung der ersten Ablenkeinheit und der zweiten Ablenkeinheit gemäß der 11.

Further practical embodiments and advantages of the invention are described below in connection with the drawings. Show it:

• 1 a deflection unit in the form of a multipole according to the prior art;
• 2 a schematic representation of a first particle beam device;
• 3 a schematic representation of a second particle beam device;
• 4th a schematic representation of a third particle beam device;
• 5 a schematic representation of a deflection unit, which is connected to a supply unit with a supply cable;
• 6th a schematic representation of the deflection unit according to 5 ;
• 7th a schematic representation of the supply cable according to 5 ;
• 8th a schematic representation of a double deflection device with a first deflection unit, which is connected with a first supply cable to a first supply unit, and with a second deflection unit, which is connected with a second supply cable to a second supply unit;
• 9 a schematic representation of the second deflection unit according to 8th ;
• 10 a schematic representation of the second supply cable according to 8th ;
• 11 a schematic representation of a further double deflection device with a first deflection unit, which is connected to a supply unit with a supply cable, and with a second deflection unit, which is connected to the supply unit with the supply cable; as
• 12th a schematic representation of the first deflection unit and the second deflection unit according to FIG 11 .

The invention will now be explained in more detail by means of particle beam devices in the form of an SEM and in the form of a combination device which has an electron beam column and an ion beam column. It is expressly pointed out that the invention can be used in any particle beam device, in particular in any electron beam device and / or any ion beam device.

2 shows a schematic representation of an SEM 100 . The SEM 100 has a first beam generator in the form of an electron source 101 on, which is designed as a cathode. Furthermore, the SEM 100 with an extraction electrode 102 as well as with an anode 103 provided on one end of a beam guide tube 104 of the SEM 100 is put on. For example is the electron source 101 designed as a thermal field emitter. The invention, however, is not directed to such an electron source 101 restricted. Rather, any electron source can be used.

Electrons coming from the electron source 101 emerge, form a primary electron beam. The electrons are due to a potential difference between the electron source 101 and the anode 103 accelerated to anode potential. In the embodiment shown here, the anode potential is 100 V to 35 kV compared to a ground potential of a housing of a sample chamber 120 , for example 5 kV to 15 kV, especially 8 kV. Alternatively, it could also be at ground potential. In a further embodiment, the potential difference between the electron source is 101 and ground 100 V to 35 kV.

On the beam guide tube 104 two condenser lenses are arranged, namely a first condenser lens 105 and a second condenser lens 106 . Here are based on the electron source 101 towards a first objective lens 107 first seen the first condenser lens 105 and then the second condenser lens 106 arranged. It is explicitly pointed out that further embodiments of the SEM 100 can only have a single condenser lens. Between the anode 103 and the first condenser lens 105 is a first aperture unit 108 arranged. The first aperture unit 108 lies together with the anode 103 and the beam delivery tube 104 to high voltage potential, namely the potential of the anode 103 or on bulk. The first aperture unit 108 has numerous first aperture openings 108A on, one of which is in 2 is shown. For example, there are two first diaphragm openings 108A available. Each of the numerous first apertures 108A has a different opening diameter. By means of an adjusting mechanism (not shown) it is possible to set a desired first aperture 108A on an optical axis OA of the SEM 100 to adjust. It is explicitly pointed out that in further embodiments the first panel unit 108 only with a single aperture 108A can be provided. In this embodiment, an adjusting mechanism cannot be provided. The first aperture unit 108 is then stationary trained. Between the first condenser lens 105 and the second condenser lens 106 is a stationary second panel unit 109 arranged. As an alternative to this, provision is made for the second panel unit 109 to train mobile.

The first objective lens 107 has pole pieces 110 in which a bore is formed. The beam guide tube is through this hole 104 guided. In the pole pieces 110 is a coil 111 arranged.

In a lower area of the beam guide tube 104 an electrostatic delay device is arranged. This has a single electrode 112 and a tubular electrode 113 on. The tubular electrode 113 is at one end of the beam delivery tube 104 arranged which an object 125 is facing that on a movably trained object holder 114 is arranged.

The tubular electrode 113 lies together with the beam guide tube 104 at the potential of the anode 103 while the single electrode 112 as well as the object 125 on one opposite the potential of the anode 103 lower potential. In the present case, this is the ground potential of the housing of the sample chamber 120 . In this way, the electrons of the primary electron beam can be decelerated to a desired energy, which is necessary for the examination of the object 125 is required.

The SEM 100 further comprises a deflector 800 on, by which the primary electron beam is deflected and over the object 125 can be rasterized. The electrons of the primary electron beam interact with the object 125 . As a result of the interaction, interaction particles arise, which are detected. In particular, electrons from the surface of the object are used as interaction particles 125 emitted - so-called secondary electrons - or electrons of the primary electron beam scattered back - so-called backscattered electrons.

The object 125 and the single electrode 112 can also be at different potentials that differ from ground. This makes it possible to determine the location of the delay of the primary electron beam with respect to the object 125 to adjust. For example, the delay becomes quite close to the object 125 performed, aberrations become smaller.

To detect the secondary electrons and / or the backscattered electrons, there is a detector arrangement in the beam guide tube 104 arranged having a first detector 116 and a second detector 117 having. The first detector 116 is along the optical axis OA arranged on the source side, while the second detector 117 on the object side along the optical axis OA in the beam guide tube 104 is arranged. The first detector 116 and the second detector 117 are in the direction of the optical axis OA of the SEM 100 arranged offset to one another. Both the first detector 116 as well as the second detector 117 each have a passage opening through which the primary electron beam can pass. The first detector 116 and the second detector 117 are approximately at the potential of the anode 103 and the beam delivery tube 104 . The optical axis OA of the SEM 100 runs through the respective through openings.

The second detector 117 mainly used to detect secondary electrons. The secondary electrons point when exiting the object 125 initially a low kinetic energy and any direction of movement. By the one from the pipe electrode 113 outgoing strong suction field, the secondary electrons are directed towards the first objective lens 107 accelerated. The secondary electrons enter the first objective lens approximately in parallel 107 on. The bundle diameter of the beam of secondary electrons also remains in the first objective lens 107 small. The first objective lens 107 now has a strong effect on the secondary electrons and creates a comparatively short focus of the secondary electrons with sufficiently steep angles to the optical axis OA so that the secondary electrons diverge widely after the focus and the second detector 117 hit on its active surface. At the object 125 Backscattered electrons - that is, backscattered electrons, which, compared to the secondary electrons, have a relatively high kinetic energy when exiting the object 125 have - are, however, from the second detector 117 recorded only to a small extent. The high kinetic energy and the angle of the backscattered electrons to the optical axis OA when leaving the property 125 lead to the fact that a beam waist, i.e. a beam area with a minimal diameter, of the backscattered electrons in the vicinity of the second detector 117 lies. A large part of the backscattered electrons pass through the passage opening of the second detector 117 through. The first detector 116 therefore essentially serves to detect the backscattered electrons.

In another embodiment of the SEM 100 can be the first detector 116 additionally with an opposing field grid 116A be trained. The opposing field grid 116A is at the to the object 125 facing side of the first detector 116 arranged. The opposing field grid 116A has a regarding the potential of the beam guiding tube 104 negative potential in such a way that only backscattered electrons with a high energy pass through the opposing field grid 116A to the first detector 116 reach. Additionally or alternatively, the second detector 117 another opposing field grid, which is analogous to the aforementioned opposing field grid 116A of the first detector 116 is formed and has an analog function.

Furthermore, the SEM 100 in the sample chamber 120 a chamber detector 119 on, for example an Everhart-Thornley detector or an ion detector, which has a metal-coated detection surface that shields light.

The one with the first detector 116 , the second detector 117 and the chamber detector 119 generated detection signals are used to create an image or images of the surface of the object 125 to create.

It is explicitly pointed out that the aperture openings of the first aperture unit 108 and the second shutter unit 109 and the through openings of the first detector 116 and the second detector 117 are exaggerated. The through openings of the first detector 116 and the second detector 117 have an extension perpendicular to the optical axis OA in the range from 0.5 mm to 5 mm. For example, they are circular and have a diameter in the range from 1 mm to 3 mm perpendicular to the optical axis OA on.

The second bezel unit 109 In the embodiment shown here, it is designed as a perforated diaphragm and has a second diaphragm opening 118 provided for the passage of the primary electron beam, which has an extension in the range from 5 µm to 500 µm, for example 35 µm. As an alternative to this, in a further embodiment it is provided that the second panel unit 109 is provided with a plurality of aperture openings which can be moved mechanically to the primary electron beam or which can be reached by the primary electron beam using electrical and / or magnetic deflection elements. The second bezel unit 109 is designed as a pressure stage orifice. This separates a first area in which the electron source 101 is arranged and in which there is an ultra-high vacuum (10 ^-7 hPa to 10 ^-12 hPa), from a second area, which has a high vacuum (10 ^-3 hPa to 10 ^-7 hPa). The second area is the intermediate pressure area of the beam guiding tube 104 , which to the sample chamber 120 leads there.

The sample chamber 120 is under vacuum. The sample chamber is used to generate the vacuum 120 a pump (not shown) is arranged. At the in 2 The embodiment shown is the sample chamber 120 operated in a first pressure range or in a second pressure range. The first pressure range only includes pressures less than or equal to 10 ^-3 hPa, and the second pressure range only includes pressures greater than 10 ^-3 hPa. The sample chamber is to ensure these pressure ranges 120 closed by vacuum technology.

The object holder 114 is at a rehearsal table 122 arranged. The sample table 122 is designed to be movable in three mutually perpendicular directions, namely in an x-direction (first table axis), in a y-direction (second table axis) and in a z-direction (third table axis). In addition, the sample table can 122 can be rotated around two mutually perpendicular axes of rotation (table rotation axes). The invention is not on the sample table described above 122 restricted. Rather, the sample table can 122 have further axes of translation and axes of rotation, along or around which the sample table is 122 can move.

The SEM 100 also has a third detector 121 which is in the sample chamber 120 is arranged. More precisely, is the third detector 121 from the electron source 101 viewed along the optical axis OA behind the sample table 122 arranged. The sample table 122 and thus the object holder 114 can be rotated so that the on the specimen holder 114 arranged object 125 can be penetrated by the primary electron beam. When the primary electron beam passes through the object to be examined 125 the electrons of the primary electron beam come into contact with the material of the object to be examined 125 in interaction. The by the object to be examined 125 Electrons passing through are detected by the third detector 121 detected.

At the sample chamber 120 is a radiation detector 500 arranged with which interaction radiation, for example X-rays and / or cathodoluminescent light, is detected. The radiation detector 500 , the first detector 116 , the second detector 117 and the chamber detector 119 are with a control unit 123 connected to which a monitor 124 having. The third detector too 121 is with the control unit 123 connected. This is not shown for reasons of clarity. The control unit 123 processes detection signals from the first detector 116 , the second detector 117 , the chamber detector 119 , the third detector 121 and / or the radiation detector 500 and shows them in the form of images on the monitor 124 on.

The control unit 123 also has a database 126 in which data are stored and from which data are read out, for example generated images of the object 125 .

Between the electron source 101 and the tubular electrode 113 is the deflection device already mentioned above 800 arranged, which in the 2 is only shown schematically and will be explained in more detail below. The deflector 800 is used to sweep the primary particle beam over the surface of the object 125 to rasterize. The deflector 800 is through a utility cable device 802 , which in the 2 is only shown schematically and will be explained in more detail below, with a supply device 801 connected. The utility 801 is at the in 2 illustrated embodiment part of the control unit 123 . Potentials of the deflection electrodes of the deflection device 800 lie, for example, at the high voltage potential of the beam guiding tube 104 . The utility cable device 802 and the utility 801 are designed for high voltage operation.

As an alternative to the deflection device 800 can for example be the single electrode 112 can be used for rasterization. In this case, the single electrode 112 a training like the deflector 800 which is explained in more detail below.

3 shows a particle beam device in the form of a combination device 200 . The combination device 200 has two particle beam columns. On the one hand is the combination device 200 with the SEM 100 provided as it is in the 2 is already shown, but without the sample chamber 120 . Rather, it is the SEM 100 on a sample chamber 201 arranged. The sample chamber 201 is under vacuum. The sample chamber is used to generate the vacuum 201 a pump (not shown) is arranged. At the in 3 The embodiment shown is the sample chamber 201 operated in a first pressure range or in a second pressure range. The first pressure range only includes pressures less than or equal to 10 ^-3 hPa, and the second pressure range only includes pressures greater than 10 ^-3 hPa. The sample chamber is to ensure these pressure ranges 201 closed by vacuum technology.

In the sample chamber 201 is the chamber detector 119 arranged, which is designed for example as an Everhart-Thornley detector or an ion detector and which has a metal-coated detection surface that shields light. Furthermore is in the sample chamber 201 the third detector 121 arranged.

The SEM 100 is used to generate a first particle beam, namely the primary electron beam already described above and has the optical axis already mentioned above, which is in the 3 with the reference number 709 is provided and is also referred to below as the first beam axis. On the other hand is the combination device 200 provided with an ion beam device 300, which is also on the sample chamber 201 is arranged. The ion beam device 300 also has an optical axis which is shown in FIG 3 with the reference number 710 is provided and is also referred to below as the second beam axis.

The SEM 100 is regarding the sample chamber 201 arranged vertically. In contrast, the ion beam device 300 is inclined at an angle of approximately 0 ° to 90 ° to the SEM 100 arranged. In the 3 an arrangement of approximately 50 ° is shown, for example. The ion beam device 300 has a second beam generator in the form of an ion beam generator 301, which is at a predeterminable high voltage. The ion beam generator 301 generates ions which form a second particle beam in the form of an ion beam. The ions are removed by means of an extraction electrode 302 , which is at a predeterminable potential, accelerated. The second particle beam then passes through ion optics of the ion beam device 300, the ion optics being a condenser lens 303 and a second objective lens 304 having. The second objective lens 304 Eventually creates an ion probe that points on to a specimen holder 114 arranged object 125 is focused. The object holder 114 is at a rehearsal table 122 arranged.

Above the second objective lens 304 (ie in the direction of the ion beam generator 301) are an adjustable or selectable diaphragm 306 , a first electrode assembly 307 and a second electrode assembly 308 arranged, the first electrode arrangement 307 and the second electrode assembly 308 are designed as grid electrodes. By means of the first electrode arrangement 307 and the second electrode assembly 308 becomes the second particle beam over the surface of the object 125 rasterized, the first electrode arrangement 307 in a first direction and the second electrode arrangement 308 act in a second direction which is opposite to the first direction. This means that the rasterization takes place, for example, in an x-direction. The rasterization in a y-direction perpendicular thereto is carried out by further electrodes (not shown) rotated by 90 ° on the first electrode arrangement 307 and on the second electrode assembly 308 .

As explained above, the object holder is 114 at the sample table 122 arranged. Even with the in 3 The embodiment shown is the sample table 122 designed to be movable in three mutually perpendicular directions, namely in an x-direction (first table axis), in a y-direction (second table axis) and in a z-direction (third table axis). In addition, the sample table can 122 by two mutually perpendicular Rotation axes (table rotation axes) are rotated.

The one in the 3 distances shown between the individual units of the combination device 200 are exaggerated to show the individual units of the combination device 200 better to represent.

At the sample chamber 201 is a radiation detector 500 arranged with which interaction radiation, for example X-rays and / or cathodoluminescent light, is detected. The radiation detector 500 is with a control unit 123 connected to which a monitor 124 having.

The control unit 123 processes detection signals from the first detector 116 , the second detector 117 (in 3 not shown), the chamber detector 119 , the third detector 121 and / or the radiation detector 500 and shows them in the form of images on the monitor 124 on.

The control unit 123 also has a database 126 in which data are stored and from which data are read out, for example generated images of the object 125 .

The SEM 100 of the combination device 200 also points between the electron source 101 and the tubular electrode 113 the deflector 800 on, which will be explained in more detail below. The deflector 800 is through the utility cable facility 802 , which in the 3 is only shown schematically and will be explained in more detail below, with the supply device 801 connected. The utility 801 is at the in 3 illustrated embodiment part of the control unit 123 .

The first electrode arrangement 307 is with the utility 801 by another supply cable device 802A connected. Furthermore, the second electrode arrangement 308 with the utility 801 via yet another supply cable device 802B connected. On the utility cable facilities 802A and 802B we will go into more detail below.

4th is a schematic representation of a further embodiment of a particle beam device according to the invention. This embodiment of the particle beam device is denoted by the reference number 400 and comprises a mirror corrector for correcting, for example, chromatic and / or spherical aberration. The particle beam device 400 comprises a particle beam column 401 , which is designed as an electron beam column and essentially corresponds to an electron beam column of a corrected SEM. The particle beam device 400 but is not limited to an SEM with a mirror corrector. Rather, the particle beam device can comprise any type of corrector units.

The particle beam column 401 comprises a particle beam generator in the form of an electron source 402 (Cathode), an extraction electrode 403 and an anode 404 . For example is the electron source 402 designed as a thermal field emitter. Electrons coming from the electron source 402 emerge become the anode 404 due to a potential difference between the electron source 402 and the anode 404 accelerated. Accordingly, a particle beam is in the form of an electron beam along a first optical axis OA1 educated.

The particle beam is guided along a beam path, which is the first optical axis OA1 corresponds to after the particle beam from the electron source 402 has left. A first electrostatic lens is used to guide the particle beam 405 , a second electrostatic lens 406 and a third electrostatic lens 407 used.

Furthermore, the particle beam is adjusted along the beam path using a beam guiding device. The beam guiding device of this embodiment comprises a source setting unit with two magnetic deflection units 408 along the first optical axis OA1 are arranged. The particle beam device also includes 400 electrostatic beam deflection units. A first electrostatic beam deflection unit 409 , which is also designed as a quadrupole in a further embodiment, is between the second electrostatic lens 406 and the third electrostatic lens 407 arranged. The first electrostatic beam deflection unit 409 is also behind the magnetic deflectors 408 arranged. A first multipole unit 409A in the form of a first magnetic deflection unit is on one side of the first electrostatic beam deflection unit 409 arranged. In addition, there is a second multipole unit 409B in the form of a second magnetic deflection unit on the other side of the first electrostatic beam deflection unit 409 arranged. The first electrostatic beam deflection unit 409 , the first multipole unit 409A and the second multipole unit 409B are used to adjust the particle beam with respect to the axis of the third electrostatic lens 407 and the entrance window of a beam deflector 410 set. The first electrostatic beam deflection unit 409 , the first multipole unit 409A and the second multipole unit 409B can work together like a Vienna filter. At the entrance of the beam deflector 410 is another magnetic deflector 432 arranged.

The beam deflector 410 is used as a particle beam deflector, which deflects the particle beam in a certain way. The beam deflector 410 comprises several magnetic sectors, namely a first magnetic sector 411A , a second magnetic sector 411B , a third magnetic sector 411C , a fourth magnetic sector 411D , a fifth magnetic sector 411E , a sixth magnetic sector 411F and a seventh magnetic sector 411G . The particle beam enters the beam deflector 410 along the first optical axis OA1 and is driven by the beam deflector 410 in the direction of a second optical axis OA2 diverted. The beam is deflected by means of the first magnetic sector 411A , by means of the second magnetic sector 411B and by means of the third magnetic sector 411C at an angle of 30 ° to 120 °. The second optical axis OA2 is at the same angle to the first optical axis OA1 aligned. The beam deflector 410 also deflects the particle beam, which is along the second optical axis OA2 is guided, in the direction of a third optical axis OA3 . The beam is deflected by the third magnetic sector 411C , the fourth magnetic sector 411D and the fifth magnetic sector 411E provided. In the embodiment in 4th becomes the deflection to the second optical axis OA2 and to the third optical axis OA3 provided by deflecting the particle beam at an angle of 90 °. The third optical axis thus runs OA3 coaxial with the first optical axis OA1 . It is pointed out, however, that the particle beam device 400 according to the invention described here is not restricted to a deflection angle of 90 °. Rather, any suitable angle of deflection can be achieved by the beam deflection device 410 can be selected, for example 70 ° or 110 °, so that the first optical axis OA1 not coaxial with the third optical axis OA3 runs. Regarding further details of the beam deflection device 410 is related to the WO 2002/067286 A2 taken.

After the particle beam through the first magnetic sector 411A , the second magnetic sector 411B and the third magnetic sector 411C was deflected, the particle beam is along the second optical axis OA2 guided. The particle beam becomes an electrostatic mirror 414 guided and runs on its way to the electrostatic mirror 414 along a fourth electrostatic lens 415 , a third multipole unit 416A in the form of a magnetic deflection unit, a second electrostatic beam deflection unit 416 , a third electrostatic beam deflection unit 417 and a fourth multipole unit 416B in the form of a magnetic deflector. The electrostatic mirror 414 comprises a first mirror electrode 413A , a second mirror electrode 413B and a third mirror electrode 413C . Electrons of the particle beam that hit the electrostatic mirror 414 are reflected back, run again along the second optical axis OA2 and step back into the beam deflector 410 on. You will then go through the third magnetic sector 411C , the fourth magnetic sector 411D and the fifth magnetic sector 411E to the third optical axis OA3 diverted.

The electrons of the particle beam emerge from the beam deflector 410 and are along the third optical axis OA3 to an object 425 out to be examined and in an object holder 114 is arranged. On the way to the object 425 the particle beam becomes a fifth electrostatic lens 418 , a beam delivery tube 420 , a fifth multipole unit 418A , a sixth multipole unit 418B and an objective lens 421 guided. The fifth electrostatic lens 418 is an electrostatic immersion lens. The particle beam is through the fifth electrostatic lens 418 to an electrical potential of the beam guide tube 420 decelerated or accelerated.

The particle beam is through the objective lens 421 focused in a focal plane in which the object 425 is arranged. The object holder 114 is on a movable sample table 424 arranged. The movable sample table 424 is in a sample chamber 426 of the particle beam device 400 arranged. The sample table 424 is designed to be movable in three mutually perpendicular directions, namely in an x-direction (first table axis), in a y-direction (second table axis) and in a z-direction (third table axis). In addition, the sample table can 424 can be rotated around two mutually perpendicular axes of rotation (table rotation axes).

The sample chamber 426 is under vacuum. The sample chamber is used to generate the vacuum 426 a pump (not shown) is arranged. At the in 4th The embodiment shown is the sample chamber 426 operated in a first pressure range or in a second pressure range. The first pressure range only includes pressures less than or equal to 10 ^-3 hPa, and the second pressure range only includes pressures greater than 10 ^-3 hPa. The sample chamber is to ensure these pressure ranges 426 closed by vacuum technology.

The objective lens 421 can be used as a combination of a magnetic lens 422 and a sixth electrostatic lens 423 be trained. The end of the beam delivery tube 420 can also be an electrode of an electrostatic lens. Particles of the particle beam device are - after they come out of the beam guide tube 420 emerge - on a potential of the object 425 braked. the Objective lens 421 is not based on a combination of the magnetic lens 422 and the sixth electrostatic lens 423 restricted. Rather, the objective lens 421 take any suitable form. For example, the objective lens 421 also be designed as a purely magnetic lens or as a purely electrostatic lens.

The particle beam hitting the object 425 is focused, interacts with the object 425 . Interaction particles are generated. In particular, secondary electrons are released from the object 425 or backscattered electrons are emitted on the object 425 scattered back. The secondary electrons or the backscattered electrons are accelerated again and into the beam guide tube 420 along the third optical axis OA3 guided. In particular, the paths of the secondary electrons and the backscattered electrons on the path of the beam path of the particle beam run in the opposite direction to the particle beam.

The particle beam device 400 comprises a first analysis detector 419 , which along the beam path between the beam deflector 410 and the objective lens 421 is arranged. Secondary electrons which travel in directions with respect to the third optical axis OA3 are oriented at a large angle are determined by the first analysis detector 419 detected. Backscattered electrons and secondary electrons, which with respect to the third optical axis OA3 at the location of the first analysis detector 419 have a small axial distance - ie backscattered electrons and secondary electrons, which are at the location of the first analysis detector 419 a small distance from the third optical axis OA3 have - enter the beam deflector 410 one and are through the fifth magnetic sector 411E , the sixth magnetic sector 411F and the seventh magnetic sector 411G along a detection beam path 427 to a second analysis detector 428 diverted. The deflection angle is, for example, 90 ° or 110 °.

The first analytical detector 419 generates detection signals that are largely generated by emitted secondary electrons. The detection signals generated by the first analysis detector 419 become a control unit 123 and are used to provide information about the properties of the interaction area of the focused particle beam with the object 425 to obtain. In particular, the focused particle beam is over the object 425 using a deflector 800 rasterized in the form of a grid device. The deflector 800 is explained in more detail below. The deflector 800 is through the utility cable facility 802 , which in the 4th is only shown schematically and will be explained in more detail below, with the supply device 801 connected. The utility 801 is at the in 4th illustrated embodiment part of the control unit 123 . Potentials of the deflection electrodes of the deflection device 800 lie, for example, at the potential of the beam guide tube 420 . The utility cable device 802 and the utility 801 are designed for high voltage operation.

By the detection signals generated by the first analysis detector 419 can then be generated an image of the rasterized area of the object 425 generated and displayed on a display unit. The display unit is, for example, a monitor 124 on the control unit 123 is arranged.

Also the second analysis detector 428 is with the control unit 123 connected. Detection signals of the second analysis detector 428 become the control unit 123 guided and used to create an image of the rasterized area of the object 425 to generate and display on a display unit. The display unit is, for example, the monitor 124 on the control unit 123 is arranged.

At the sample chamber 426 is a radiation detector 500 arranged with which interaction radiation, for example X-rays and / or cathodoluminescent light, is detected. The radiation detector 500 is with the control unit 123 connected to the monitor 124 having. The control unit 123 processes detection signals from the radiation detector 500 and shows them in the form of pictures on the monitor 124 on.

The control unit 123 also has a database 126 in which data are stored and from which data are read out, for example generated images of the object 125 .

The following are the deflector 800 , the utility 801 and the utility cable device 802 discussed in more detail. It is explicitly pointed out that all deflection devices of the aforementioned particle beam devices 100 , 200 and 400 like the deflector 800 can be formed and via supply cable devices, which like the supply cable device 802 may be designed with supply devices that, like the supply device 801 can be formed, can be connected. This applies in particular to the first electrode arrangement 307 and the second electrode assembly 308 of the ion beam device 300 of the combination device 200 .

The following are embodiments of the deflector 800 , the utility 801 and the utility cable device 802 for the SEM 100 according to the 2 described. For the deflector 800 , the first electrode array 307 , the second electrode array 308 , the utility 801 who have favourited the utility cable device 802 who have favourited the further supply cable device 802A as well as the further supply cable device 802B of the combination device 200 according to the 3 as well as for the deflector 800 , the utility 801 and the utility cable device 802 of the particle beam device 400 according to the 4th The same applies accordingly.

5 shows a schematic view of a deflector 800 who have favourited a deflection unit 600 has, which is designed as a multipole. The deflection unit 600 is through the utility cable facility 802 in the form of a supply cable 602 with the utility 801 in the form of a supply unit 601 connected.

The deflection unit 600 is in the 6th shown in more detail. 6th shows a plan view of the deflection unit 600 from the electron source 101 along the optical axis OA towards the object 125 . The deflection unit 600 serves to generate at least one electric field and to deflect the primary electron beam of the SEM 100 . The deflection unit is used in particular 600 the rasterization of the primary electron beam over the object 125 .

The deflection unit 600 has a first number of deflection electrodes AE1 ₁ until AE1 ₈ on. Thus, the in 6th illustrated embodiment a total of 8 deflection electrodes AE1 ₁ until AE1 ₈ on. However, the invention is not limited to this number. Rather, the first number of deflection electrodes can be selected as desired. For example, the first number of deflection electrodes is an even number. In one embodiment, the first number of deflection electrodes is 4, 6, 8, 10, or 12. In the case of the in 6th The embodiment shown is the deflection unit 600 a multipole with eight deflection electrodes, namely with a first deflection electrode AE1 ₁ , with a second deflection electrode AE1 ₂ , with a third deflection electrode AE1 ₃ , with a fourth deflection electrode AE1 ₄ , with a fifth deflection electrode AE1 ₅ , with a sixth deflection electrode AE1 ₆ , with a seventh deflection electrode AE1 ₇ and with an eighth deflection electrode AE1 ₈ . The first deflection electrode AE1 ₁ becomes a first deflection voltage U ₁ fed. The second deflection electrode AE1 ₂ becomes a second deflection voltage U ₂ fed. The third deflection electrode AE1 ₃ becomes a third deflection voltage U ₃ fed. The fourth deflection electrode AE1 ₄ becomes a fourth deflection voltage U ₄ fed. The fifth deflection electrode AE1 ₅ becomes a fifth deflection voltage U ₅ fed. The sixth deflection electrode AE1 ₆ becomes a sixth deflection voltage U ₆ fed. The seventh deflection electrode AE1 ₇ becomes a seventh deflection voltage U ₇ fed. The eighth deflection electrode AE1 ₈ becomes an eighth deflection voltage U ₈ fed. The supply cable 602 , which is the deflection unit 600 with the supply unit 601 connects, serves to supply the aforementioned deflection voltages U ₁ until U ₈ . On the supply cable 602 will be discussed in more detail below.

The deflection electrodes AE1 ₁ until AE1 ₈ the deflection unit 600 each point to each other and with respect to the optical axis OA of the SEM 100 a first geometric arrangement. In other words, they are deflection electrodes AE1 ₁ until AE1 ₆ the deflection unit 600 each to each other and with respect to the optical axis OA arranged such that the deflection electrodes AE1 ₁ until AE1 ₈ assume the first geometric arrangement. In other words, the deflection electrodes AE1 ₇ until AE1 ₈ the deflection unit 600 a predeterminable distance and a predeterminable angular alignment to one another. Furthermore, the deflection electrodes AE1 ₁ until AE1 ₈ the deflection unit 600 a predeterminable distance and a predeterminable angular alignment to the optical axis OA on. It is also provided that each of the deflection electrodes AE1 ₁ until AE1 ₈ the deflection unit a position assigned to it PAE1 ₁ until PAE1 ₈ occupies in the first geometric arrangement. For example, the first number are deflection electrodes AE1 ₁ until AE1 ₈ arranged along a circle whose center is on the optical axis OA is arranged (cf. 6th ). At the in 6th The embodiment shown, the first geometric arrangement is an 8-fold rotationally symmetrical arrangement, with the optical axis OA of the SEM 100 is a first axis of symmetry.

The supply unit 601 is to supply the deflection electrodes AE1 ₁ until AE1 ₈ the deflection unit 600 designed with voltage and, depending on it, also with current and is used accordingly.

As already stated above, the supply cable connects 602 the supply unit 601 with the deflection electrodes AE1 ₁ until AE1 ₈ the deflection unit 600 . As from the 7th can be seen, has the supply cable 602 a second set of ladders L1 ₁ until L1 ₈ and a longitudinal axis 619 on. 7th shows a schematic sectional view of the supply cable 602 along the longitudinal axis 619 .

The first number of deflection electrodes AE1 ₁ until AE1 ₈ the deflection unit 600 and the second number of ladders L1 ₁ until L1 ₈ of the supply cable 602 is equal. The supply cable 602 has a first conductor L1 ₁ , a second conductor L1 ₂ , a third leader L1 ₃ , a fourth leader L1 ₄ , a fifth leader L1 ₅ , a sixth conductor L1 ₆ , one seventh head L1 ₇ and an eighth head L1 ₈ on. The ladder L1 ₁ until L1 ₈ of the supply cable 602 each point to each other and with respect to the longitudinal axis 619 of the supply cable 602 a second geometric arrangement. In other words, the conductors are L1 ₁ until L1 ₈ of the supply cable 602 each to each other and with respect to the longitudinal axis 619 of the supply cable 602 arranged so that the ladder L1 ₁ until L1 ₈ of the supply cable 602 assume the second geometric arrangement. In other words, the conductors point L1 ₁ until L1 ₈ of the supply cable 602 a predeterminable distance and a predeterminable angular alignment to one another. Also point the ladder L1 ₁ until L1 ₈ of the supply cable 602 a predeterminable distance and a predeterminable angular alignment to the longitudinal axis 619 of the supply cable 602 on. It is also provided that each of the conductors L1 ₁ until L1 ₈ of the supply cable 602 a position assigned to him PL1 ₁ until PL1 ₈ occupies in the second geometric arrangement. For example, the second is a number of ladders L1 ₁ until L1 ₈ of the supply cable 602 arranged along a circle, the center of which is on the longitudinal axis 619 of the supply cable 602 is arranged. At the in 7th The illustrated embodiment, the second geometric arrangement is an 8-fold rotationally symmetrical arrangement, with the longitudinal axis 619 of the supply cable 602 is a second axis of symmetry.

The first deflection electrode AE1 ₁ is with the first head L1 ₁ connected. The second deflection electrode AE1 ₂ is with the second head L1 ₂ connected. The third deflection electrode AE1 ₃ is with the third head L1 ₃ connected. The fourth deflection electrode AE1 ₄ is with the fourth head L1 ₄ connected. The fifth deflection electrode AE1 ₅ is with the fifth head L1 ₅ connected. The sixth deflection electrode AE1 ₆ is connected to the sixth conductor L1 ₆ . The seventh deflection electrode AE1 ₇ is with the seventh head L1 ₇ connected is. The eighth deflection electrode AE1 ₈ is with the eighth head L1 ₈ connected.

At the in 7th illustrated embodiment has the supply cable 602 a filling unit 620 on, those around and those along the longitudinal axis 619 of the supply cable 602 in the supply cable 602 is arranged. To the filling unit 620 are the ladder L1 ₁ until L1 ₈ arranged. For example is the filling unit 620 formed from plastic. In particular, it is provided that the filling unit 620 to be tubular.

At the in 7th illustrated embodiment has the supply cable 602 an isolation unit 621 on, those around and those along the longitudinal axis 619 of the supply cable 602 in the supply cable 602 is arranged. The isolation unit 621 includes the ladder L1 ₁ until L1 ₈ Completely. The isolation unit 621 is formed, for example, from a plastic that has electrically insulating properties. In particular, is the isolation unit 621 for example formed from a foamed material which has enclosed air areas in order to achieve a low relative dielectric constant.

At the in 7th illustrated embodiment has the supply cable 602 an outer shield 622 on which as the outer layer of the supply cable 602 is trained. In other words, the supply cable 602 an outer layer, which acts as an outer shield 622 is trained. For example, the outer shield 622 designed as a wire mesh, in particular as a metal wire mesh. In addition or as an alternative, a metal foil is also used as an external shield 622 suitable. The outer shield 622 shields the supply cable 602 from stray fields and prevents the emission of electromagnetic waves.

The first geometrical arrangement of the deflection electrodes AE1 ₁ until AE1 ₈ corresponds to the second geometric arrangement of the conductors L1 ₁ until L1 ₈ . In other words, the deflection electrodes AE1 ₁ until AE1 ₈ to each other and with respect to the optical axis OA a geometric arrangement (namely the first geometric arrangement) which corresponds to the geometric arrangement (namely the second geometric arrangement) which the conductors L1 ₁ until L1 ₈ to each other and with respect to the longitudinal axis 619 of the supply cable 602 exhibit. In other words, they are deflection electrodes AE1 ₁ until AE1 ₈ to each other and with reference to the optical axis OA arranged identically to the ladder L1 ₁ until L1 ₈ to each other and with reference to the longitudinal axis 619 of the supply cable 602 . It is further provided that the assigned position PAE1 _i in the first geometric arrangement _{corresponds to the assigned position PL1 i} in the second geometric arrangement, where i is an integer for which: 1 i 8. In other words, is the deflection electrode AE1 _{i arranged} in the first geometric arrangement at the same position as the conductor L1 _i in the second geometric arrangement.

8th shows a schematic view of a deflector 800 in the form of a double deflection device, which has a first deflection unit in the form of the aforementioned deflection unit 600 through a first supply cable in the form of the supply cable 602 with a first supply unit in the form of the supply unit 601 is connected, and the one second deflection unit 900 having. The second deflection unit 900 is through a second supply cable 902 with a second supply unit 901 connected. From the electron source 101 in the direction the first objective lens 107 are seen along the optical axis OA of the SEM 100 first the first deflection unit 600 and then the second deflector 900 arranged. The second deflection unit 900 is closer to the optical center of the first objective lens 107 as the first deflector 600 arranged.

The first deflection unit 600 was above regarding the 6th explained in detail. The first supply cable 602 was above regarding the 7th explained in detail. Reference is made to these explanations, which are also used in the embodiment of FIG 8th with regard to the first deflection unit 600 and the first supply cable 602 are valid.

The second deflection unit 900 is in the 9 shown in more detail. 9 shows a plan view of the second deflection unit 900 from the electron source 101 along the optical axis OA towards the object 125 . The second deflection unit 900 serves to generate at least one electric field and to deflect the primary electron beam of the SEM 100 . The second deflection unit is used in particular 900 the rasterization of the primary electron beam over the object 125 .

The second deflection unit 900 has a third number of deflection electrodes AE2 ₁ until AE2 ₈ on. Thus, the in 9 illustrated embodiment a total of 8 deflection electrodes AE2 ₁ bis AE2 ₈ on. However, the invention is not limited to this number. Rather, the third number of deflection electrodes can be selected as desired. For example, the third number of deflection electrodes is an even number. In one embodiment, the third number of deflection electrodes is 4, 6, 8, 10 or 12. In the case of the in 9 The embodiment shown is the second deflection unit 900 a multipole with eight deflection electrodes, namely with a first deflection electrode AE2 ₁ , with a second deflection electrode AE2 ₂ , with a third deflection electrode AE2 ₃ , with a fourth deflection electrode AE2 ₄ , with a fifth deflection electrode AE2 ₅ , with a sixth deflection electrode AE2 ₆ , with a seventh deflection electrode AE2 ₇ and with an eighth deflection electrode AE2 ₈ . The first deflection electrode AE2 ₁ becomes a first deflection voltage V ₁ fed. The second deflection electrode AE2 ₂ becomes a second deflection voltage V ₂ fed. The third deflection electrode AE2 ₃ becomes a third deflection voltage V ₃ fed. The fourth deflection electrode AE2 ₄ becomes a fourth deflection voltage V ₄ fed. The fifth deflection electrode AE2 ₅ becomes a fifth deflection voltage V ₅ fed. The sixth deflection electrode AE2 ₆ becomes a sixth deflection voltage V ₆ fed. The seventh deflection electrode AE2 ₇ becomes a seventh deflection voltage V ₇ fed. The eighth deflection electrode AE2 ₈ becomes an eighth deflection voltage V ₈ fed. The second supply cable 902 , which is the second deflection unit 900 with the second supply unit 901 connects, serves to supply the aforementioned deflection voltages V ₁ until V ₈ . On the second supply cable 902 will be discussed in more detail below.

The deflection electrodes AE2 ₁ to AE2 ₈ the second deflection unit 900 each point to each other and with respect to the optical axis OA of the SEM 100 a third geometric arrangement. In other words, they are deflection electrodes AE2 ₁ until AE2 ₈ the second deflection unit 900 each to each other and with respect to the optical axis OA arranged such that the deflection electrodes AE2 ₁ until AE2 ₈ the second deflection unit 900 assume the third geometric arrangement. In other words, the deflection electrodes AE2 have ₁ to AE2 ₈ the second deflection unit 900 a predeterminable distance and a predeterminable angular alignment to one another. Furthermore, the deflection electrodes AE2 ₁ to AE2 ₈ the second deflection unit 900 a predeterminable distance and a predeterminable angular alignment to the optical axis OA on. Furthermore, it is provided that each of the deflection electrodes AE2 ₁ to AE2 ₈ the second deflection unit 900 a position assigned to it PAE2 ₁ until PAE2 ₈ occupies in the third geometric arrangement. For example, the third number of deflection electrodes AE2 are ₁ to AE2 ₈ arranged along a circle whose center is on the optical axis OA is arranged (cf. 9 ). At the in 9 The illustrated embodiment, the third geometric arrangement is an 8-fold rotationally symmetrical arrangement, with the optical axis OA of the SEM 100 is a third axis of symmetry.

The second supply unit 901 is to supply the deflection electrodes AE2 ₁ until AE2 ₈ the second deflection unit 900 designed with voltage and, depending on it, also with current and is used accordingly.

As already stated above, the second supply cable connects 902 the supply unit 901 with the deflection electrodes AE2 ₁ to AE2 ₈ the second deflection unit 900 . As from the 10 can be seen, has the second supply cable 902 a fourth number of ladders L2 ₁ until L2 ₈ and a second longitudinal axis 919 on. 10 shows a schematic sectional view of the second supply cable 902 along the second longitudinal axis 919 of the second supply cable 902 .

The third number of deflection electrodes AE2 ₁ to AE2 ₈ and the fourth number of ladders L2 ₁ until L2 ₈ is equal. The second supply cable 902 has a first conductor L2 ₁ , a second conductor L2 ₂ , a third leader L2 ₃ , a fourth leader L2 ₄ , a fifth leader L2 ₅ , a sixth leader L2 ₆ , a seventh leader L2 ₇ and an eighth head L2 ₈ on. The ladder L2 ₁ until L2 ₈ of the second supply cable 902 each point to each other and with respect to the second longitudinal axis 919 of the second supply cable 902 a fourth geometric arrangement. In other words, the conductors are L2 ₁ until L2 ₈ of the second supply cable 902 each to each other and with respect to the second longitudinal axis 919 of the second supply cable 902 arranged so that the ladder L2 ₁ until L2 ₈ of the second supply cable 902 assume the fourth geometric arrangement. In other words, the conductors point L2 ₁ until L2 ₈ of the second supply cable 902 a predeterminable distance and a predeterminable angular alignment to one another. Also point the ladder L2 ₁ until L2 ₈ of the second supply cable 902 a predeterminable distance and a predeterminable angular orientation to the second longitudinal axis 919 of the second supply cable 902 on. It is also provided that each of the conductors L2 ₁ until L2 ₈ of the second supply cable 902 a position assigned to him PL2 ₁ until PL2 ₈ occupies in the fourth geometric arrangement. For example, the fourth is a number of ladders L2 ₁ until L2 ₈ of the second supply cable 902 arranged along a circle, the center of which is on the second longitudinal axis 919 of the second supply cable 902 is arranged. At the in 10 The illustrated embodiment, the fourth geometric arrangement is an 8-fold rotationally symmetrical arrangement, with the second longitudinal axis 919 of the second supply cable 902 is a fourth axis of symmetry.

The first deflection electrode AE2 ₁ the second deflection unit 900 is with the first head L2 ₁ of the second supply cable 902 connected. The second deflection electrode AE2 ₂ the second deflection unit 900 is with the second head L2 ₂ of the second supply cable 902 connected. The third deflection electrode AE2 ₃ the second deflection unit 900 is with the third head L2 ₃ of the second supply cable 902 connected. The fourth deflection electrode AE2 ₄ the second deflection unit 900 is with the fourth head L2 ₄ of the second supply cable 902 connected. The fifth deflection electrode AE2 ₅ the second deflection unit 900 is with the fifth head L2 ₅ of the second supply cable 902 connected. The sixth deflection electrode AE2 ₆ the second deflection unit 900 is with the sixth head L2 ₆ of the second supply cable 902 connected. The seventh deflection electrode AE2 ₇ the second deflection unit 900 is with the seventh head L2 ₇ of the second supply cable 902 connected. The eighth deflection electrode AE2 ₈ the second deflection unit 900 is with the eighth head L2 ₈ of the second supply cable 902 connected.

At the in 10 illustrated embodiment has the supply cable 902 a second filling unit 920 on, around and along the second longitudinal axis 919 of the second supply cable 902 in the second supply cable 902 is arranged. To the second filling unit 920 are the ladder L2 ₁ until L2 ₈ of the second supply cable 902 arranged. For example, is the second filling unit 920 formed from plastic. In particular, it is provided that the filling unit 920 to be tubular.

At the in 10 illustrated embodiment has the second supply cable 902 a second isolation unit 921 on, around and along the second longitudinal axis 919 of the second supply cable 902 in the second supply cable 902 is arranged. The second isolation unit 921 includes the ladder L2 ₁ until L2 ₈ of the second supply cable 902 Completely. The second isolation unit 921 is formed, for example, from a plastic that has electrically insulating properties. In particular, is the second isolation unit 921 for example formed from a foamed material which has enclosed air areas in order to achieve a low relative dielectric constant.

At the in 10 illustrated embodiment has the second supply cable 902 a second outer shield 922 on which as the outer layer of the second supply cable 902 is trained. In other words, the second supply cable 902 an outer layer which acts as a second outer shield 922 is trained. For example, the second outer shield is 922 designed as a wire mesh, in particular as a metal wire mesh. In addition or as an alternative, a metal foil is also used as an external shield 922 suitable. The outer shield 922 shields the supply cable 902 from stray fields and prevents the emission of electromagnetic waves.

The third geometric arrangement of the deflection electrodes AE2 ₁ bis AE2 ₈ the second deflection unit 900 corresponds to the fourth geometric arrangement of the conductors L2 ₁ until L2 ₈ of the second supply cable 902 . In other words, the deflection electrodes AE2 have ₁ to AE2 ₈ the second deflection unit 900 to each other and with respect to the optical axis OA a geometric arrangement (namely the third geometric arrangement) which corresponds to the geometric arrangement (namely the fourth geometric arrangement) which the conductors L2 ₁ until L2 ₈ of the second supply cable 902 to each other and with respect to the longitudinal axis 919 of the second supply cable 902 exhibit. In other words, the deflection electrodes AE2 are ₁ to AE2 ₈ the second deflection unit 900 to each other and with reference to the optical axis OA arranged identically to the ladder L2 ₁ until L2 ₈ of the second supply cable 902 to each other and with reference to the second longitudinal axis 919 of the second supply cable 902 . It is also provided that the assigned position PAE2 _k in the third geometric arrangement corresponds to the assigned position PL2 _k in the fourth geometric arrangement, where k is an integer for which: 1 k 8. In other words, the deflection electrode AE2 _k in the third geometrical arrangement is arranged at the same position as the conductor L2 _k in the fourth geometrical arrangement.

11 shows a schematic view of a deflector 800 in the form of a double deflection device, which has a first deflection unit in the form of the aforementioned deflection unit 600 through a first supply cable in the form of the supply cable 602 with a first supply unit in the form of the supply unit 601 is connected, and which the second deflection unit 900 having. From the electron source 101 towards the first objective lens 107 are seen along the optical axis of the SEM 100 first the first deflection unit 600 and then the second deflector 900 arranged. The second deflection unit 900 is closer to the optical center of the first objective lens 107 as the first deflector 600 arranged.

The first deflection unit 600 was above regarding the 6th explained in detail. The first supply cable 602 was above regarding the 7th explained in detail. Reference is made to these explanations, which are also used in the embodiment of FIG 11 with regard to the first deflection unit 600 and the first supply cable 602 are valid.

The second deflection unit 900 was above regarding the 9 explained in detail. Reference is made to these explanations, which are also used in the embodiment of FIG 11 with regard to the second deflection unit 900 are valid.

In contrast to the embodiment of the 8th is in the embodiment of 11 only a single supply unit, namely the first supply unit 601 provided both for supplying the first deflection unit 600 as well as for supplying the second deflection unit 900 is formed with tension.

In the embodiment of 11 each deflection electrode AE2 is ₁ bis AE2 ₈ the second deflection unit 900 (i) a different one with respect to the optical axis OA Deflection electrode offset by 180 ° AE1 ₁ until AE1 ₈ the first deflection unit 600 assigned and (ii) is with the same conductor L1 ₁ until L1 ₈ of the first supply cable 602 connected, which the associated deflection electrode AE1 ₁ until AE1 ₈ the first deflection unit 600 supplied with voltage.

The above is explained by way of example with the aid of two assignments of deflection electrodes. 12th shows the first deflection unit 600 and the second deflector 900 . The first deflection electrode AE1 ₁ the first deflection unit 600 is the fifth deflection electrode AE2 ₅ the second deflection unit 900 assigned. The fifth deflection electrode AE2 ₅ the second deflection unit 900 is with respect to the optical axis OA offset by 180 ° to the first deflection electrode AE1 ₁ the first deflection unit 600 arranged. The fifth deflection electrode AE2 ₅ the second deflection unit 900 is with the same conductor, namely the first conductor L1 ₁ of the first supply cable 602 connected. Thus, the first deflection electrode AE1 ₁ becomes the first deflection unit 600 and the fifth deflection electrode AE2 ₅ the second deflection unit 900 the same deflection voltage supplied, viz U ₁ = V ₅ . Further is the eighth deflection electrode AE1 ₈ the first deflection unit 600 the fourth deflection electrode AE2 ₄ the second deflection unit 900 assigned. The fourth deflection electrode AE2 ₄ the second deflection unit 900 is with respect to the optical axis OA offset by 180 ° to the eighth deflection electrode AE1 ₈ the first deflection unit 600 arranged. The fourth deflection electrode AE2 ₄ the second deflection unit 900 is with the same leader, namely the eighth leader L1 ₈ of the first supply cable 602 connected. Thus become the eighth deflecting electrode AE1 ₈ the first deflection unit 600 and the fourth deflection electrode AE2 ₄ the second deflection unit 900 the same deflection voltage supplied, viz U ₈ = V ₄ . The further connections between the further deflection electrodes of the first deflection unit 600 and the second deflector 900 are trained accordingly, so that the following applies: U ₂ = V ₆ , U ₃ = V ₇ , U ₄ = V ₈ , U ₅ = V ₁ , U ₆ = V ₂ and U ₇ = V ₃ .

The ladder L1 ₁ until L1 ₈ of the first supply cable 602 as well as the ladder L2 ₁ until L2 ₈ of the second supply cable 902 are also each self-insulated lines. A conductive part (for example a stranded wire or a wire) of one of the aforementioned conductors L1 ₁ until L1 ₈ and L2 ₁ until L2 ₈ is arranged essentially centrally in this conductor and has a relatively small design relative to an insulating part of this conductor, so that a low capacitance per unit length is achieved. In addition, the insulating part can consist entirely or partially of a foamed material which has enclosed air areas in order to achieve a low dielectric constant.

It is explicitly pointed out that one is the first supply cable 602 with the ladders L1 ₁ until L1 ₈ and / or the second supply cable 902 with the ladder L2 ₁ until L2 ₈ can also be used to supply grid coils. For this purpose, the grid coils are interconnected in a star shape, for example. Furthermore, measuring resistors are arranged in the supply line, the voltage drop of which can be used as a feedback signal in the connected current sources.

The embodiments of the invention explained here have the advantages already explained above, to which reference is made.

The features of the invention disclosed in the present description, in the drawings and in the claims can be essential both individually and in any combination for the implementation of the invention in its various embodiments. The invention is not restricted to the embodiments described. It can be varied within the scope of the claims and taking into account the knowledge of the competent person skilled in the art.

List of reference symbols

100

SEM

101

Electron source

102

Extraction electrode

103

anode

104

Beam guide tube

105

first condenser lens

106

second condenser lens

107

first objective lens

108

first aperture unit

108A

first aperture

109

second aperture unit

110

Pole shoes

111

Kitchen sink

112

single electrode

113

Tubular electrode

114

Object holder

116

first detector

116A

Opposing field grid

117

second detector

118

second aperture

119

Chamber detector

120

Sample chamber

121

third detector

122

Sample table

123

Control unit with processor

124

monitor

125

object

126

Database

200

Combination device

201

Sample chamber

300

ion beam device

301

ion beam generator

302

Extraction electrode in the ion beam device

303

Condenser lens

304

second objective lens

306

adjustable or selectable aperture

307

first electrode arrangement

308

second electrode arrangement

400

Particle beam device with corrector unit

401

Particle beam column

402

Electron source

403

Extraction electrode

404

anode

405

first electrostatic lens

406

second electrostatic lens

407

third electrostatic lens

408

magnetic deflector

409

first electrostatic beam deflection unit

409A

first multipole unit

409B

second multipole unit

410

Beam deflector

411A

first magnetic sector

411B

second magnetic sector

411C

third magnetic sector

411D

fourth magnetic sector

411E

fifth magnetic sector

411F

sixth magnetic sector

411G

seventh magnetic sector

413A

first mirror electrode

413B

second mirror electrode

413C

third mirror electrode

414

electrostatic mirror

415

fourth electrostatic lens

416

second electrostatic beam deflection unit

416A

third multipole unit

416B

fourth multipole unit

417

third electrostatic beam deflection unit

418

fifth electrostatic lens

418A

fifth multipole unit

418B

sixth multipole unit

419

first analysis detector

420

Beam guide tube

421

Objective lens

422

magnetic lens

423

sixth electrostatic lens

424

Sample table

425

object

426

Sample chamber

427

Detection beam path

428

second analysis detector

432

another magnetic deflector

500

Radiation detector

600

(first) deflection unit

601

(first) supply unit

602

(first) supply cable

619

(first) longitudinal axis

620

(first) filling unit

621

(first) isolation unit

622

(first) outer shield

709

first beam axis

710

second beam axis

800

Deflector

801

Utility

802

Supply cable device

802A

further supply cable device

802B

still further supply cable device

900

second deflection unit

901

second supply unit

902

second supply cable

919

second longitudinal axis

920

second filling unit

921

second isolation unit

922

second outer shield

AE11

first deflection electrode of the (first) deflection unit

AE12

second deflection electrode of the (first) deflection unit

AE13

third deflection electrode of the (first) deflection unit

AE14

fourth deflection electrode of the (first) deflection unit

AE15

fifth deflection electrode of the (first) deflection unit

AE16

sixth deflection electrode of the (first) deflection unit

AE17

seventh deflection electrode of the (first) deflection unit

AE18

eighth deflection electrode of the (first) deflection unit

AE21

first deflection electrode of the second deflection unit

AE22

second deflection electrode of the second deflection unit

AE23

third deflection electrode of the second deflection unit

AE24

fourth deflection electrode of the second deflection unit

AE25

fifth deflection electrode of the second deflection unit

AE26

sixth deflection electrode of the second deflection unit

AE27

seventh deflection electrode of the second deflection unit

AE28

eighth deflection electrode of the second deflection unit

L11

first conductor of the (first) supply cable

L12

second conductor of the (first) supply cable

L13

third conductor of the (first) supply cable

L14

fourth conductor of the (first) supply cable

L15

fifth conductor of the (first) supply cable

L15

sixth conductor of the (first) supply cable

L17

seventh conductor of the (first) supply cable

L18

eighth conductor of the (first) supply cable

L21

first conductor of the second supply cable

L22

second conductor of the second supply cable

L23

third conductor of the second supply cable

L24

fourth conductor of the second supply cable

L25

fifth conductor of the second supply cable

L26

sixth conductor of the second supply cable

L27

seventh conductor of the second supply cable

L28

eighth conductor of the second supply cable

ME1

first multipole electrode

ME2

second multipole electrode

ME3

third multipole electrode

ME4

fourth multipole electrode

ME5

fifth multipole electrode

ME6

sixth multipole electrode

ME7

seventh multipole electrode

ME8

eighth multipole electrode

PAE11

Position of the first deflection electrode of the (first) deflection unit

PAE12

Position of the second deflection electrode of the (first) deflection unit

PAE13

Position of the third deflection electrode of the (first) deflection unit

PAE14

Position of the fourth deflection electrode of the (first) deflection unit

PAE15

Position of the fifth deflection electrode of the (first) deflection unit

PAE16

Position of the sixth deflection electrode of the (first) deflection unit

PAE17

Position of the seventh deflection electrode of the (first) deflection unit

PAE18

Position of the eighth deflection electrode of the (first) deflection unit

PAE21

Position of the first deflection electrode of the second deflection unit

PAE22

Position of the second deflection electrode of the second deflection unit

PAE23

Position of the third deflection electrode of the second deflection unit

PAE24

Position of the fourth deflection electrode of the second deflection unit

PAE25

Position of the fifth deflection electrode of the second deflection unit

PAE26

Position of the sixth deflection electrode of the second deflection unit

PAE27

Position of the seventh deflection electrode of the second deflection unit

PAE28

Position of the eighth deflection electrode of the second deflection unit

PL11

Position of the first conductor of the (first) supply cable

PL12

Position of the second conductor of the (first) supply cable

PL13

Position of the third conductor of the (first) supply cable

PL14

Position of the fourth conductor of the (first) supply cable

PL15

Position of the fifth conductor of the (first) supply cable

PL16

Position of the sixth conductor of the (first) supply cable

PL17

Position of the seventh conductor of the (first) supply cable

PL18

Position of the eighth conductor of the (first) supply cable

PL21

Position of the first conductor of the second supply cable

PL22

Position of the second conductor of the second supply cable

PL23

Position of the third conductor of the second supply cable

PL24

Position of the fourth conductor of the second supply cable

PL25

Position of the fifth conductor of the second supply cable

PL26

Position of the sixth conductor of the second supply cable

PL27

Position of the seventh conductor of the second supply cable

PL28

Position of the eighth conductor of the second supply cable

OA

optical axis

OA1

first optical axis

OA2

second optical axis

OA3

third optical axis

U1

first deflection voltage of the (first) deflection unit

U2

second deflection voltage of the (first) deflection unit

U3

third deflection voltage of the (first) deflection unit

U4

fourth deflection voltage of the (first) deflection unit

U5

fifth deflection voltage of the (first) deflection unit

U6

sixth deflection voltage of the (first) deflection unit

U7

seventh deflection voltage of the (first) deflection unit

U8

eighth deflection voltage of the (first) deflection unit

V1

first deflection voltage of the second deflection unit

V2

second deflection voltage of the second deflection unit

V3

third deflection voltage of the second deflection unit

V4

fourth deflection voltage of the second deflection unit

V5

fifth deflection voltage of the second deflection unit

V6

sixth deflection voltage of the second deflection unit

V7

seventh deflection voltage of the second deflection unit

V8

eighth deflection voltage of the second deflection unit

QUOTES INCLUDED IN THE DESCRIPTION

This list of the documents listed by the applicant was generated automatically and is included solely for the better information of the reader. The list is not part of the German patent or utility model application. The DPMA assumes no liability for any errors or omissions.

Patent literature cited

• WO 2002/067286 A2 [0091]

Claims (16)

Particle beam device (100, 200, 400) for imaging, processing and / or analysis of an object (125, 425), with - at least one particle beam generator (101, 301, 402) for generating a particle beam with charged particles, - at least one objective lens (107 , 304, 421) for focusing the particle beam on the object (125, 425), wherein when the particle beam interacts with the object (125, 425), interaction particles and / or alternating radiation arise / arise, - at least one detector (116, 117, 119, 121, 419, 428, 500) for the detection of the interaction particles and / or interaction radiation, - at least one optical axis (OA, OA1, OA2, OA3, 709, 710), - at least one deflection unit (307, 308, 600, 800 , 900) for generating at least one electric field and for deflecting the particle beam, the deflection unit (307, 308, 600, 800, 900) having a first number of deflection electrodes AE1 ₁ to AE1 _n , where n is an integer greater than or equal to 4, the deflection electrodes AE1 ₁ to AE1 _n each having a first geometric arrangement with respect to one another and with respect to the optical axis (OA, OA1, OA2, OA3, 709, 710) and each of the deflection electrodes AE1 ₁ to AE1 _n having a position assigned to it PAE1 ₁ to PAE1 _n occupies in the first geometric arrangement, - at least one supply unit (601, 801, 901) for supplying the deflection electrodes AE1 ₁ to AE1 _n with voltage, and with - at least one supply cable (602, 802, 902), wherein the supply cable (602, 802, 902) the supply unit (601, 801, 901) with the deflection electrodes AE1 ₁ to AE1 _n , the supply cable (602, 802, 902) a second number of conductors L1 ₁ to L1 _n and one Has longitudinal axis (619, 919), the conductors L1 ₁ to L1 _n each having a second geometric arrangement to one another and with respect to the longitudinal axis (619, 919) and wherein each of the conductors L1 ₁ to L1 _{n has} a position PL1 ₁ to PL1 assigned to it _n in the second geometric arrangement, where - the first geometric arrangement of the deflection electrodes AE1 ₁ to AE1 _n corresponds to the second geometric arrangement of the conductors L1 ₁ to L1 _n , and where - the assigned position PAE1 _i in the first geometric arrangement of the assigned position PL1 _i in the second geometric arrangement, where i is an integer for which the following applies: 1 ≤i ≤n. Particle beam device (100, 200, 400) according to Claim 1 wherein - the first geometric arrangement is a first n-fold rotationally symmetrical arrangement, and wherein - the second geometric arrangement is a second n-fold rotationally symmetrical arrangement. Particle beam device (100, 200, 400) according to Claim 1 or 2 , wherein - each conductor L1 ₁ to L1 _{n is designed} to supply a selectable voltage, and wherein - the deflection electrode AE1 _{1 is} connected to the conductor L1 _{i in} such a way that the deflection electrode AE1 _{i has} the selectable voltage of the conductor L1 _{1 connected to it} having. Particle beam device (100, 200, 400) according to one of the preceding claims, having one of the following features: (i) n is an integer for which the following applies: 4 ≤n ≤50; (ii) n is an even number for which the following applies: 4 ≤ n ≤ 50. Particle beam device (100, 200, 400) according to one of the preceding claims, wherein the supply cable (602, 802, 902) has at least one of the following features: (i) a filler (620, 920) around which the conductors L1 ₁ to L1 _n are arranged; (ii) an insulation unit (621, 921) which partially or completely comprises _{the conductors L1 1} to L1 _n; (iii) an outer shield (622, 922) which is designed as an outer layer of the supply cable (602, 802, 902). Particle beam device (100) according to one of the preceding claims, with one of the following features: (i) the deflection unit (600) has a first deflection electrode AE1 ₁ , a second deflection electrode AE1 ₂ , a third deflection electrode AE1 ₃ and a fourth deflection electrode AE1 ₄ , and the supply cable (602) has a first conductor L1 ₁ , a second conductor L1 ₂ , a third conductor L1 ₃ and a fourth conductor L1 ₄ , the first deflection electrode AE1 _{1 being} connected to the first conductor L1 ₁ , the second Deflection electrode AE1 _{2 is} connected to the second conductor L1 ₂ , the third deflection electrode AE1 _{3 being} connected to the third conductor L1 ₃ and the fourth deflection electrode AE1 ₄ connected to the fourth conductor L1 ₄ ; (ii) the deflection unit (600) has a first deflection electrode AE1 ₁ , a second deflection electrode AE1 ₂ , a third deflection electrode AE1 ₃ , a fourth deflection electrode AE1 ₄ , a fifth deflection electrode AE1 ₅ and a sixth deflection electrode AE1 ₆ , and the supply cable ( 602) has a first conductor L1 ₁ , a second conductor L1 ₂ , a third conductor L1 ₃ , a fourth conductor L1 ₄ , a fifth conductor L1 ₅ and a sixth conductor L1 ₆ , the first deflection electrode AE1 ₁ with the first conductor L1 _{1 is} connected, the second deflection electrode AE1 _{2 being} connected to the second conductor L1 ₂ , the third deflection electrode AE1 _{3 being} connected to the third conductor L1 ₃ , the fourth deflection electrode AE1 _{4 being} connected to the fourth conductor L1 ₄ , wherein the fifth deflection electrode AE1 _{5 is} connected to the fifth conductor L1 ₅ and wherein the sixth deflection electrode AE1 _{6 is} connected to the sixth conductor L1 ₆ ; (iii) the deflection unit (600) has a first deflection electrode AE1 ₁ , a second deflection electrode AE1 ₂ , a third deflection electrode AE1 ₃ , a fourth deflection electrode AE1 ₄ , a fifth deflection electrode AE1 ₅ , a sixth deflection electrode AE1 ₆ , a seventh deflection electrode AE1 ₇ and an eighth deflection electrode AE1 ₈ , and the supply cable (602) has a first conductor L1 ₁ , a second conductor L1 ₂ , a third conductor L1 ₃ , a fourth conductor L1 ₄ , a fifth conductor L1 ₅ , a sixth conductor L1 ₆ , a seventh conductor L1 ₇ and an eighth conductor L1 ₈ , the first deflection electrode AE1 _{1 being} connected to the first conductor L1 ₁ , the second deflection electrode AE1 _{2 being} connected to the second conductor L1 ₂ , the third deflection electrode AE1 ₃ is connected to the third conductor L1 ₃ , the fourth deflection electrode AE1 _{4 being} connected to the fourth conductor L1 ₄ , the fifth deflection electrode AE1 _{5 being} connected to the fifth conductor L1 ₅ t, the sixth deflection electrode AE1 _{6 being} connected to the sixth conductor L1 ₆ , the seventh deflecting electrode AE1 _{7 being} connected to the seventh conductor L1 ₇ and the eighth deflecting electrode AE1 _{8 being} connected to the eighth conductor L1 ₈ . Particle beam device (100, 200, 400) according to one of the preceding claims, wherein the deflection unit is a first deflection unit (600), wherein the supply unit is a first supply unit (601), wherein the supply cable is a first supply cable (602) and wherein the particle beam device (100, 200, 400) additionally has the following features: a second deflection unit (900) for generating at least one further electric field and for deflecting the particle beam, the second deflection unit (900) having a third number of deflection electrodes AE2 ₁ to AE2 _m wherein m is an integer greater than or equal to 4, the deflection electrodes AE2 ₁ to AE2 _{m of} the second deflection unit (900) each to each other and with respect to the optical axis (OA, OA1, OA2, OA3, 709, 710) a third geometric Have arrangement, and wherein each of the deflection electrodes AE2 ₁ to AE2 _{m of} the second deflection unit (900) has a position PAE2 ₁ to PAE2 _m assigned to it in the third A second supply unit (901) for supplying the deflection electrodes AE2 ₁ to AE2 _{m of} the second deflection unit (900) with voltage, - a second supply cable (902), the second supply cable (902) being the second supply unit (901 ) connects _{to the deflection electrodes AE2 1} to AE2 _{m of} the second deflection unit (900), wherein the second supply _{cable (902) has a fourth number of conductors L2 1} to L2 _m and a longitudinal axis (919) and wherein the conductors L2 ₁ to L2 _m of the second supply cable (902) each have a fourth geometric arrangement with respect to one another and with respect to the longitudinal axis (919) of the second supply cable (902), and each conductor L2 ₁ to L2 _{m of} the second supply cable (902) has an assigned position PL2 ₁ to PL2 _m occupies in the fourth geometric arrangement, the third geometric arrangement of the deflection electrodes AE2 ₁ to AE2 _{m of} the second deflection unit (900) of the fourth geomet innovative arrangement of the conductors L2 ₁ to L2 _m of the second supply cable (902), and wherein - the assigned position PAE2 _k in the third geometric arrangement of the assigned position PL2 _k in the fourth geometric arrangement corresponds, where k is an integer for the the following applies: 1 ≤ k ≤ m. Particle beam device (100, 200, 400) according to Claim 7 wherein - the third geometric arrangement is a third m-fold rotationally symmetrical arrangement, and wherein - the fourth geometric arrangement is a fourth m-fold rotationally symmetrical arrangement. Particle beam device (100, 200, 400) according to Claim 7 or 8th , wherein - each conductor L2 ₁ to L2 _{m of} the second supply cable (902) is designed to supply a selectable voltage, and wherein - the deflection electrode AE2 _{k of} the second deflection unit (900) is connected to the conductor L2 _{k of} the second supply cable (902) in this way is that each deflection electrode AE2 _{k of} the second deflection unit (900) has the selectable voltage of the conductor L2 _{k of} the second supply cable (902) connected to it. Particle beam device (100, 200, 400) according to one of the Claims 7 until 9 , having one of the following characteristics: (i) m is an integer for which the following applies: 4 ≤ m ≤ 50; (ii) m is an even number for which the following applies: 4 ≤ m ≤ 50. Particle beam device (100, 200, 400) according to one of the Claims 7 until 10 , with one of the following features: (i) the second deflection unit (900) has a first deflection electrode AE2 ₁ , a second deflection electrode AE2 ₂ , a third deflection electrode AE2 ₃ and a fourth deflection electrode AE2 ₄ , and the second supply cable (902) has a first conductor L2 ₁ , a second conductor L2 ₂ , a third conductor L2 ₃ and a fourth conductor L2 ₄ , the first deflection electrode AE2 _{1 of} the second deflection unit (900) connected to the first conductor L2 _{1 of} the second supply cable (902) is, with the second Deflection electrode AE2 _{2 of} the second deflection unit (900) is connected to the second conductor L2 _{2 of} the second supply cable (902), the third deflection electrode AE2 _{3 of} the second deflection unit (900) being connected to the third conductor L2 _{3 of} the second supply cable (902) and wherein the fourth deflection electrode AE2 _{4 of} the second deflection unit (900) is connected to the fourth conductor L2 _{4 of} the second supply cable (902); (ii) the second deflection unit (900) has a first deflection electrode AE2 ₁ , a second deflection electrode AE2 ₂ , a third deflection electrode AE2 ₃ , a fourth deflection electrode AE2 ₄ , a fifth deflection electrode AE2 ₅ and a sixth deflection electrode AE2 ₆ , and the second Supply cable (902) has a first conductor L2 ₁ , a second conductor L2 ₂ , a third conductor L2 ₃ , a fourth conductor L2 ₄ , a fifth conductor L2 ₅ and a sixth conductor L2 ₆ , the first deflection electrode AE2 _{1 of} the second Deflection unit (900) is connected to the first conductor L2 _{1 of} the second supply cable (902), _{the second deflection electrode AE2 2 of} the second deflection unit (900) being connected to the second conductor L2 _{2 of} the second supply cable (902), the third deflection electrode AE2 _{3 of} the second deflection unit (900) is connected to the third conductor L2 _{3 of} the second supply cable (902), the fourth deflection electrode AE2 _{4 of} the second deflection unit (900) is connected to the fourth conductor L2 _{4 of} the second supply cable (902), the fifth deflection electrode AE2 _{5 of} the second deflection unit (900) being connected to the fifth conductor L2 _{5 of} the second supply cable (902) and the sixth deflection electrode AE2 _{6 of} the second Deflection unit (900) is connected to the sixth conductor L2 _{6 of} the second supply cable (902); (iii) the second deflection unit (900) has a first deflection electrode AE2 ₁ , a second deflection electrode AE2 ₂ , a third deflection electrode AE2 ₃ , a fourth deflection electrode AE2 ₄ , a fifth deflection electrode AE2 ₅ , a sixth deflection electrode AE2 ₆ , a seventh deflection electrode AE2 ₇ and an eighth deflection electrode AE2 ₈ , and the second supply cable (902) has a first conductor L2 ₁ , a second conductor L2 ₂ , a third conductor L2 ₃ , a fourth conductor L2 ₄ , a fifth conductor L2 ₅ , a sixth conductor L2 ₆ , a seventh conductor L2 ₇ and an eighth conductor L2 ₈ , the first deflection electrode AE2 _{1 of} the second deflection unit (900) being connected to the first conductor L2 _{1 of} the second supply cable (902), the second deflection electrode AE2 _{2 of} the second deflection unit (900) is connected to the second conductor L2 _{2 of} the second supply cable (902), the third deflection electrode AE2 _{3 of} the second deflection unit (900) to the third conductor L2 _{3 of} the second supply cable (902) is connected, the fourth deflection electrode AE2 _{4 of} the second deflection unit (900) being connected to the fourth conductor L2 _{4 of} the second supply cable (902), the fifth deflection electrode AE2 _{5 of} the second deflection unit (900) is connected to the fifth conductor L2 _{5 of} the second supply cable (902), the sixth deflection electrode AE2 _{6 of} the second deflection unit (900) is connected to the sixth conductor L2 _{6 of} the second supply cable (902), the seventh deflection electrode AE2 _{7 of} the second Deflection unit (900) is connected to the seventh conductor L2 _{7 of} the second supply cable (902) and wherein the eighth deflection electrode AE2 _{8 of} the second deflection unit (900) is connected to the eighth conductor L2 _{8 of} the second supply cable (902). Particle beam device (100, 200, 400) according to one of the Claims 7 until 11 wherein the second supply cable (902) has at least one of the following features: (i) a second filler (920) around which the conductors L2 ₁ to L2 _{m of} the second supply cable (902) are arranged; (ii) a second insulation unit (921) which _{partially or completely comprises the conductors L2 1} to L2 _{m of} the second supply cable (902); (iii) a second outer shield (922), which is designed as an outer layer of the second supply cable (902). Particle beam device (100, 200, 400) according to one of the Claims 7 until 12th , wherein the second deflection unit (900) is designed for the time-delayed deflection of the particle beam. Particle beam device (100, 200, 400) according to one of the Claims 1 until 6th wherein the deflection unit is a first deflection unit (600) and wherein the particle beam device additionally has the following features: a second deflection unit (900) for generating at least one further electric field and for deflecting the particle beam, the second deflection unit (900) having a third Number of deflection electrodes AE3 ₁ to AE3 _n , the deflection electrodes AE3 ₁ to AE3 _{n of} the second deflection unit (902) each having a third geometric arrangement with respect to one another and with regard to the optical axis (OA, OA1, OA2, OA3, 709, 710), wherein each of the deflection electrodes AE3 ₁ to AE3 _n assumes an assigned position PAE3 ₁ to PAE3 _n in the third geometric arrangement, - the supply cable (602) connects the supply unit (601) with the deflection electrodes AE3 ₁ to AE3 _{n of} the second deflection unit (900 ), and - the deflection electrode AE3 _{k of} the second deflection unit (900) is (i) of the different and with regard to the optical axis _{e deflection electrode AE1 i} offset by 180 ° is assigned to the first deflection unit (600) and (ii) is connected to the same conductor L1 _{i of} the supply cable (602) as the assigned deflection electrode AE1 _{i of} the first deflection unit (600). Particle beam device (100, 200, 400) according to one of the preceding claims, wherein the particle beam device is designed as an electron beam device and / or as an ion beam device. Particle beam device (200) according to one of the preceding claims, wherein the particle beam generator (101) for generating the particle beam is a first particle beam generator, wherein the particle beam is a first particle beam, the charged particles are first charged particles and the objective lens (107) as the first Objective lens is designed for focusing the first particle beam, and wherein the particle beam device (200) further comprises: - At least one second particle beam generator (301) for generating a second particle beam with second charged particles, and - At least one second objective lens (304) for focusing the second particle beam on the object (125).

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